US3475713A - Semiconductor resistor and photoconductive assembly containing same - Google Patents

Semiconductor resistor and photoconductive assembly containing same Download PDF

Info

Publication number
US3475713A
US3475713A US643656A US3475713DA US3475713A US 3475713 A US3475713 A US 3475713A US 643656 A US643656 A US 643656A US 3475713D A US3475713D A US 3475713DA US 3475713 A US3475713 A US 3475713A
Authority
US
United States
Prior art keywords
resistor
fracture
plate
semiconductor
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US643656A
Other languages
English (en)
Inventor
Hendrik Jacobus Maria Joormann
Aalbert Van Vulpen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Philips Corp
Original Assignee
US Philips Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Philips Corp filed Critical US Philips Corp
Application granted granted Critical
Publication of US3475713A publication Critical patent/US3475713A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/006—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/1406—Terminals or electrodes formed on resistive elements having positive temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/102—Varistor boundary, e.g. surface layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making

Definitions

  • FIG. 1 SEMICONDUCTOR RESISTOR AND PHOTOCONDUCTIVE ASSEMBLY CONTAINING SAME Filed June 7:, 1967 2 Sheets-Sheet l FIG. 1
  • a substantially prismatic shaped semiconductor resistor having at least one side face bevelled up to an end face which end face lies at right angles to the other faces of the resistor body, the bevelled side face and the opposite side face being provided with metal electrodes which extend up to the end face.
  • Such a resistor may be mounted on a printed circuit board with the bevelled end away from the circuit board.
  • the invention relates to a semi-conductor resistor having a body of semiconductive material which is preferably sintered and comprises electrodes and to a method of manufacturing such a resistor.
  • resistors are photoresistors, thermistors and varistors.
  • a resistor of the above type is characterized in that the shape of the body is substantially prismatic, at least one of the side faces of said body being bevelled near one end up to an end face which extends at right angles to the side faces of the body and is constituted by a surface of fracture of the material, said bevelled side face and an oppositely located side face each being provided with a metal coating serving as an electrode and extending up to the edge of the said surface of fracture.
  • a resistor may have a very small, readily reproducible distance between the electrodes mutually while the surface of fracture constitutes a non-contaminated surface of semiconductive material located between the electrodes.
  • the resistor may be used without additional measures for being mounted on a printed circuit board if the side faces with the electrodes at the end remote from the bevelled end are located at a mutual distance corresponding to the pitch of said wiring and the last-mentioned end comprises a surface which extends at right angles to the side faces.
  • the characteristic properties of a resistor according to the invention are mainly determined by the region where the electrode separation is smallest.
  • the dark resistance thereof is sub- 3,475,713" Patented Get. 28, 1969 stantially not influenced by the part of the resistor which is not located in the proximity of the surface of fracture which is then used as the photosensitive part, because the electrode separation there is large everywhere with respect to that of the surface of fracture.
  • connection elements are provided on the metallized side faces while in a preferred embodiment thereof the connection elements extend at right angles to the surface of fracture with their longitudinal direction.
  • the connection elements extend with their longitudinal direction in the direction at right angles to the surface of fracture, a very compact arrangement becomes possible in a circuit arrangement in which such a resistor is used.
  • the invention further relates to a method of manufacturing a semiconductor resistor of the type mentioned 1 in the preamable.
  • a semiconductor resistor of the type mentioned 1 in the preamable is obtained by breaking a plate of semiconductive material which is metallized on oppositely located surfaces, the said plate being provided at least on one of these surfaces with a groove, the semiconductive material being broken at least along that groove.
  • the method according to the invention is characterized in that the metal coating on the said surface is provided after providing that groove in that surface.
  • This method enables an economic manufacture of a resistor according to the invention. Because the metal coating is provided after grooves have been provided in the plate, the fracture along that groove automatically provides a surface of fracture along which the electrodes can extend at a very small mutual distance.
  • FIGURE 1 in an isometric projection a semiconductor resistor according to the invention which is mounted on a partly shown printed circuit board.
  • FIGURE 2 shows partly in cross section, partly in isometric projection, a part of a reading matrix for punched tape information in which resistors according to the invention are incorporated which are provided with strip-like fiat metal connection elements.
  • FIGURES 3, 4, 5 and 6 show various stages of a method according to the invention.
  • reference numeral 1 denotes a semiconductor resistor, for example, a temperature-sensitive resistor, according to the invention, which is suitable for being mounted on a printed circuit board.
  • the .resistor 1 is mounted on a board 3 which is only partly shown and comprises printed wiring 5, 7.
  • the resistor 1 consists of a substantially prismatic body 9 of approximately 1.25 x 1.25 x 3 mms. of a sintered semiconductive material.
  • This semiconductive material may, for example, be a lanthanum doped barium titanate having a positive temperature coefi'icient of its electrical resistance.
  • the semiconductive material may be, for example, lithium doped nickel oxide or titanium doped ferric oxide.
  • the side faces 11, 13 are each provided with a metal coating 17, 19, for example, of nickel-chromium deposited from the vapour phase.
  • the metal coatings 17, 19 extend at one end up to the surface of fracture 15 and at the other end up to a second end face 21 located opposite to the surface of fracture 15.
  • the second end face 21 bears on the plate 3 with printed wiring 5, 7 in such manner that the metal coatings 17, 19 bear on the conductors 5, 7 with their edges extending along the end face 21.
  • the metal coatings 17, 19 are connected in an electrically conductive manner to the conductors 5, 7 along said edges, for example, by means of an electrically conducting cement as is diagrammatically shown and denoted by 23 and 25.
  • the distance between the metal coatings 17, 19 of the side faces 11, 13 serving as electrodes is smaller than at other areas of the resistor. This distance can easily be made beforehand to be a few hundred microns or smaller.
  • the surface of fracture 15 is a non-contaminated surface.
  • the properties of the resistor which are substantially determined by the properties of the semiconductive material in the surface of fracture or in the proximity thereof are consequently not influenced by impurities.
  • the resistor 1 may alternately be constructed, for example, as a photosensitive resistor when, for example, the body 9 consists of copperand gallium-activated cadmium sulphide or cadmium selenide.
  • photosensitive semiconductor materials suitable for the body 9 are, for example, A B compounds, such as gallium arsenide and gallium phosphide.
  • Both the light and the dark resistance between the electrodes 17 and 19 are mainly determined by that of the surface of fracture 15.
  • the electrode separation and consequently the resistance between the electrodes per surface unit thereof is much larger than in the surface of fracture so that the resistances of the other parts substantially have no influence on the properties of the assembly.
  • a number of photosensitive resistors 27, 29 are mounted in holes 31 in an electrically insulated plate 33.
  • the holes 31 are arranged regularly in rows and columns and have diameters, for example, of 1.1 mms.
  • the centre distance between the successive holes in a row or column is, for example, 2.54 mms.
  • the thickness of the plate 33 is, for example, 10 mms.
  • the plate consists of an electrically insulating light-absorbing material, for example, an opaque phenolic paper laminate.
  • the resistors 27, 29 comprise a substantially prismatic body 32 of, for example, sintered copperand galium-activated cadmium sulphide, the dimensions of which are, for example, 1 x 1 x 5.5 mms.
  • Two oppositely located side faces of the body 32 are provided with metal coatings 34, 35, for example, a layer of gold deposited from the vapour phase.
  • the metallised side face 35 is bevelled and ends in a surface of fracture 37 which serves as a photosensitive surface.
  • Strip-like flat metal connection elements 39, 41 are secured in an electricaly conductive manner, for example, with an electrically conductive cement, to the metal-coated side faces 34, 35.
  • the Width of the strips 39, 41 may be equal to that of the holes 31 and the strips may extend in the longitudinal direction along the body at right angles to the surface of fracture 37.
  • connection element 39 comprises, at its end remote from the body 32, a curved portion 43 with which it bears on an electrically conductive layer 47, for example, of a conductive silver lacquer which is provided on the plate 33.
  • the bent portions 43 are secured to the conductive layer 47 by means of an electrically conductive cement 48.
  • the connection element 41 extends at one end to beyond the end of the body 32 remote from the surface of fracture 37 and, at the other end, to before the bevel of the metallised side face 35.
  • the connection element 41 is somewhat narrowed at its end 45 remote from the surface of fracture 37.
  • connection elements 41 of the resistors 27, 29 are connected in an electrically conductive manner, for example, by dip soldering, in sleeves 50 which are secured, for example, by folding, in an electrically insulating plate 49 of, for example, hard paper having a thickness of approximately 2 mms.
  • the sleeves 50 contact soldering lugs 51 to which may be connected a separate supply conductor (not shown) for each individual resistor.
  • the plates 33 and 49 are glued together in their mutualy correct position after which the resistors 27, 29 are inserted into the holes 31 and cemented with their ends 43 to the layer 47 of the plate 33.
  • the ends 45 are then soldered in the sleeves 50 by dipping the sides of the plate 49 remote from the plate 33 in a soldering bath.
  • a radiation pattern can be detected such as it has to b edone, for example, by a reading matrix in a reading punched card information.
  • the measuring angle of the photoresistors is restricted by the deep location of the surfaces of fracture 37 in the holes 31 which does not require any costly measures as a result of the favourable construction of the photoresistors 27, 29.
  • FIGURES 3 to 6 show the manufacture of a semiconductor resistor according to the invention in various stages.
  • a plate 53 (FIGURE 3) of sintered semiconductive material having a groove 55 is obtained by compressing a quantity of finely divided semiconductive material in a mould, the groove 55 being also formed by that mould, and then sintering the resulting plate.
  • FIGURE 4 a conductive layer 57, 59, for example, of gold and deposited from the vapour phase, is provided on both sides. Then the plate is broken along planes denoted by broken lines 61 in a direction at right angles to the groove so that blocks as shown in FIGURE 5 are obtained. Each of these blocks is finally broken along the groove 55 according to a plane which is shown in broken lines 63.
  • FIGURE -6 diagrammatically shows the resistor obtained after breaking along a surface of fracture 65 along the groove 55. So the surface of fracture 65 is obtained at the end of the process so that the possibility of damage and contamination thereof is very small.
  • the depth of the groove 55 determines the minimum distance of the metal coatings 57, 59 on the surface of fracture 65 and thus mainly the electric properties of the resistor.
  • a semiconductor resistor having a body of a semiconductive material provided with electrodes, said body being substantially prismatic in shape with at least one side face being beveled near one end up to an end face of said body, said end face extending at right angles to the side faces of said body and being constituted by a surface of fracture of said semiconductor material, said beveled side face and the oppositely located side face being each provided with a separate metal coating, each of said metal coatings serving as a separate electrode and each of said metal coatings extending up to and ending at the edge of said surface of fracture.
  • connection elements extend with their longitudinal direction in a direction at right angles to the surface of fracture.
  • a photoconductive assembly particularly useful as a reading matrix for reading punched card information, said assembly comprising in combination, a flat insulating plate, an electrically conductive layer positioned on one surface of said plate, said plate and electrically conductive layer being provided with a plurality of apertures, a strip-like electrical connection element positioned in a plane away from said insulator plate on the side opposite of the electrically conductive layer, a photoconductive resistor of claim 4 located between each aperture and said electrical connection element, each photoconductive resistor being positioned in such a manner that the surface References Cited UNITED STATES PATENTS 1,011,824 12/1911 Linder et a1 338-15 2,196,830 4/1940 Hewlett 338-15 2,678,401 5/1954 Jaeger 33817 X 2,823,245 2/1958 Solow 33817 X REUBEN EPSTEIN, Primary Examiner US. Cl. X.R.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Thermistors And Varistors (AREA)
US643656A 1966-06-09 1967-06-05 Semiconductor resistor and photoconductive assembly containing same Expired - Lifetime US3475713A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6607971A NL6607971A (de) 1966-06-09 1966-06-09

Publications (1)

Publication Number Publication Date
US3475713A true US3475713A (en) 1969-10-28

Family

ID=19796839

Family Applications (1)

Application Number Title Priority Date Filing Date
US643656A Expired - Lifetime US3475713A (en) 1966-06-09 1967-06-05 Semiconductor resistor and photoconductive assembly containing same

Country Status (6)

Country Link
US (1) US3475713A (de)
CH (1) CH488256A (de)
DE (1) DE1665244A1 (de)
FR (1) FR1529987A (de)
GB (1) GB1173444A (de)
NL (1) NL6607971A (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3694660A (en) * 1971-01-12 1972-09-26 Mattel Inc Radiation sensitive readout head with circuit board construction
EP0007667A1 (de) * 1978-07-31 1980-02-06 Philips Electronics Uk Limited Infrarot-Detektorelemente und ihre Herstellung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1011824A (en) * 1911-01-26 1911-12-12 Oscar Linder Selenium cell.
US2196830A (en) * 1937-05-29 1940-04-09 Gen Electric Photoelectric cell
US2678401A (en) * 1950-09-28 1954-05-11 Curtiss Wright Corp Low distortion alternating current photoelectric apparatus
US2823245A (en) * 1953-02-05 1958-02-11 Int Resistance Co Photocell

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1011824A (en) * 1911-01-26 1911-12-12 Oscar Linder Selenium cell.
US2196830A (en) * 1937-05-29 1940-04-09 Gen Electric Photoelectric cell
US2678401A (en) * 1950-09-28 1954-05-11 Curtiss Wright Corp Low distortion alternating current photoelectric apparatus
US2823245A (en) * 1953-02-05 1958-02-11 Int Resistance Co Photocell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3694660A (en) * 1971-01-12 1972-09-26 Mattel Inc Radiation sensitive readout head with circuit board construction
EP0007667A1 (de) * 1978-07-31 1980-02-06 Philips Electronics Uk Limited Infrarot-Detektorelemente und ihre Herstellung

Also Published As

Publication number Publication date
GB1173444A (en) 1969-12-10
DE1665244A1 (de) 1971-01-21
NL6607971A (de) 1967-12-11
CH488256A (de) 1970-03-31
FR1529987A (fr) 1968-06-21

Similar Documents

Publication Publication Date Title
US4074340A (en) Trimmable monolithic capacitors
IT8322982A0 (it) Dispositivo elettronico includente una piastrina comprendente un substrato ed una struttura di collegamento elettrico formata su una superfice maggiore del substrato e costituita da unapellicola elettricamente isolante e da uno strato di collegamento metallico.
US4430522A (en) Laminated bus bar with capacitors and method of making same
US3267485A (en) Electrode printing assembly
US3340381A (en) Thermal printing wafer and method for making the same
US4399321A (en) High capacitance bus bar including multilayer ceramic capacitors
GB2184882A (en) High capacitance bus bar including multilayer ceramic capacitors
GB1154017A (en) Electronic Circuit Components
US3042806A (en) Photocell assembly for reading punched records
US3346783A (en) Assembly of solid electrolytic capacitors
US3475713A (en) Semiconductor resistor and photoconductive assembly containing same
US3118095A (en) Capacitor and terminal therefor
US3316467A (en) Spark gap electronic component
US8111126B2 (en) Over-current protection device and manufacturing method thereof
US2990498A (en) Capacitor
US3267407A (en) Programmable matrix
US3324362A (en) Electrical components formed by thin metallic form on solid substrates
US4429346A (en) Ceramic capacitor
US3489980A (en) Resistive device
US1877482A (en) Resistance device
GB1143208A (en) Electronic component
GB1415454A (en) Mounting means of electrical components
JPWO2015019643A1 (ja) サーミスタ素子
US3361937A (en) Electrical component assembly with improved diode and resistor structure
GB1152735A (en) Method of making Contact to Semiconductor Components