US3452314A - Low noise thermistor assembly and method - Google Patents

Low noise thermistor assembly and method Download PDF

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US3452314A
US3452314A US640200A US3452314DA US3452314A US 3452314 A US3452314 A US 3452314A US 640200 A US640200 A US 640200A US 3452314D A US3452314D A US 3452314DA US 3452314 A US3452314 A US 3452314A
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thermistor
gold
terminals
thermistor material
deposited
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US640200A
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Meyer Sapoff
John G Froemel
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Victory Engineering Corp
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Victory Engineering Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/041Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed as one or more layers or coatings
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49082Resistor making
    • Y10T29/49085Thermally variable
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49082Resistor making
    • Y10T29/49101Applying terminal

Definitions

  • FIG. 4 LOW NOISE THERMISTOR ASSEMBLY AND METHOD Filed May 22. 1967 FIG. 2 315 FIG. 4
  • One or more terminals and a resistance pattern of gold is then deposited through a mask on desired areas of the thermistor material.
  • the thermistor assembly is then heated in a furnace at 500 degrees centigrade for fifteen minutes to partially diifuse the gold into the thermistor material. After the heating cycle, platinum wires iridium) are welded to the gold terminals. The resulting thermistors inject considerably less noise into a circuit when passing current.
  • This invention relates to a means and method for making thermistors producing almost no noise when passing current.
  • the invention has particular relationship to thermistors which are to be used in amplifier or telephone circuits passing voice frequency currents.
  • Therrnistors used for measuring purposes may inject noises into the circuit without producing any harmful effects.
  • any circuit which is connected to a sound transducer it is important to keep the noise as low as possible.
  • the main source of noise is in the connection between the thermistor material and the metal electrodes which make contact with them.
  • Plating or eavporating a metal onto a thermistor surface is always susceptible to microscopic arcing and minor circuit breaking due to insufficient pressur ebetween the two materials.
  • the thermistor material may be evaporated onto a nonconducting substrate or it may be deposited onto the substrate by sputtering techniques in a rarified atmosphere of an inert gas.
  • FIGURE 1 is a plan view of an area of thermistor material deposited evenly onto a nonconducting substrate.
  • FIGURE 2 is a plan view of one form of the invention and shows the thermistor material deposited in a resistor pattern on a substrate.
  • FIGURE 3 is a plan view of the device shown in FIGURE 1, with the gold terminal material deposited on the thermistor material in another pattern which will produce a low resistance between the terminals. This view also shows the terminal wires.
  • FIGURE 4 is a cross-sectional view showing the substrate, the thermistor material, and a gold terminal before the application of the heating cycle.
  • FIGURE 5 is a cross-sectional view taken along line 5-5 of FIGURE 2 and is similar to FIGURE 4 except that the gold has been alloyed into the thermistor material and a terminal wire has been welded to the gold.
  • a substrate 10 is shown with an area of thermistor material 11 evaporated thereon.
  • the deposition of the thermistor material may be done by either evaporation or sputtering. This constitutes the first step in the production of a low resistance thermistor.
  • two gold terminals 12, 13, are deposited on the thermistor material as shown in FIGURE 3.
  • the gold is preferably deposited by sputtering through a stainless steel mask which can be positioned directly in front of the thermistor material during the sputtering process. Apparatus for performing this step is described in co-pending patent application Ser. No. 435,119, filed Feb. 25, 1965, in the names of John G. Fromel and Meyer Sapoff, for Thin Film Resistance Elements and Method, now abandoned.
  • the thermistor array is next placed in a furnace and heated to 500 centigrade for about fifteen minutes. This heating does not change the thermistor material because it is made up of a mixture of oxides but causes the gold to diffuse partially into the thermistor. After heating, Wires 14 and 15 are welded to terminal areas 16- and 17, and the thermistor is ready for use.
  • the above described thermistor is obviously a low resistance element since the distances between terminals is short and since the terminals are long.
  • the type shown in FIGURE 2 is fabricated.
  • the thermistor material 20 is sputtered onto a base 10 through a mask so that the thermistor material has a long path between its end portions '21 and 22.
  • gold areas 23 and 24 are deposited through a mask in a manner similar to that described above.
  • the thermistor is next given a heat treatment as described above by heating to 500 centigrade for fifteen minutes. After the heating operation, wire terminals 14 and 15 are added.
  • FIGURES 4 and 5 illustrate the method of noise re duction due to heating.
  • the substrate 10 carries a layer of thermistor material 22 and a gold terminal 24.
  • the gold rests on top of the thermistor material but there is no evidence of combination.
  • the thermistor material 22 and gold terminal 24 have been diffused together as is indicated by the merging cross-hatching lines in FIGURE 5. This construction accounts for the lack of noise.
  • a platinum wire 15 or any other type of wire may be welded or soldered to the gold terminal 24 and the thermistor is ready for use.
  • a thermistor comprising a non-conductive substrate, thermistor material deposited on the substrate to form a resistance, a plurality of gold terminal areas deposited on the thermistor material at predetermined positions to form terminals for the application of an electric voltage, said gold terminals diffused into the thermistor material by the application of heat after the gold has been deposited, and a terminal wire secured to each of said gold terminals for connection to an external circuit.
  • thermoistor as claimed in claim 1 wherein the thermistor material is a mixture of metal oxides.
  • a method of forming thermistors having gold diffused terminals for the reduction of electric circuit noise comprising the following steps: depositing thermistor materia1 on a non-conductive substrate, depositing gold on predetermined terminal areas to jorm circuit terminals, heating the array in a furnace of a temperature within the range of 400 to 600 degrees centigrade for a time interval in excess of 10 minutes, and finally attaching wire terminals to the gold terminals to form an electric circuit component.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)

Description

June 24, 1969 M. SAPOFF ETAL 3,452,314
LOW NOISE THERMISTOR ASSEMBLY AND METHOD Filed May 22. 1967 FIG. 2 315 FIG. 4
FIG. 5
United States Patent 01 lice 3,452,3'14 Patented June 24, 1969 3,452,314 LOW NOISE THERMISTOR ASSEMBLY AND METHOD Meyer Sapotr, West Orange, and John G. Froemel, Verona, N.J., assignors to Victory Engineering Corporation, Springfield, N.J., a corporation of elaware Filed May 22, 1967, Ser. No. 640,200 Int. Cl. H01c 7/04, 7/00 U.S. Cl. 338-22 4 Claims ABSTRACT OF THE DISCLOSURE Thermistor materials are deposited on a substrate by evaporation or sputtering. One or more terminals and a resistance pattern of gold is then deposited through a mask on desired areas of the thermistor material. The thermistor assembly is then heated in a furnace at 500 degrees centigrade for fifteen minutes to partially diifuse the gold into the thermistor material. After the heating cycle, platinum wires iridium) are welded to the gold terminals. The resulting thermistors inject considerably less noise into a circuit when passing current.
Background of the invention This invention relates to a means and method for making thermistors producing almost no noise when passing current. The invention has particular relationship to thermistors which are to be used in amplifier or telephone circuits passing voice frequency currents.
Summary of the invention Therrnistors used for measuring purposes, particularly in bridges, may inject noises into the circuit without producing any harmful effects. However, when used in any circuit which is connected to a sound transducer it is important to keep the noise as low as possible. It has been found that the main source of noise is in the connection between the thermistor material and the metal electrodes which make contact with them. Plating or eavporating a metal onto a thermistor surface is always susceptible to microscopic arcing and minor circuit breaking due to insufficient pressur ebetween the two materials. It has been found that the use of gold sputtered on a terminal area and the surface of the thermistor and then treated in a furnace will either alloy or diifuse into the thermistor material and produce a bond that is substantially free of noise. The thermistor material may be evaporated onto a nonconducting substrate or it may be deposited onto the substrate by sputtering techniques in a rarified atmosphere of an inert gas.
Brief description of figures FIGURE 1 is a plan view of an area of thermistor material deposited evenly onto a nonconducting substrate.
FIGURE 2 is a plan view of one form of the invention and shows the thermistor material deposited in a resistor pattern on a substrate.
FIGURE 3 is a plan view of the device shown in FIGURE 1, with the gold terminal material deposited on the thermistor material in another pattern which will produce a low resistance between the terminals. This view also shows the terminal wires.
FIGURE 4 is a cross-sectional view showing the substrate, the thermistor material, and a gold terminal before the application of the heating cycle.
FIGURE 5 is a cross-sectional view taken along line 5-5 of FIGURE 2 and is similar to FIGURE 4 except that the gold has been alloyed into the thermistor material and a terminal wire has been welded to the gold.
Description 0] preferred embodiment Referring now to FIGURE 1, a substrate 10 is shown with an area of thermistor material 11 evaporated thereon. The deposition of the thermistor material may be done by either evaporation or sputtering. This constitutes the first step in the production of a low resistance thermistor. Next, two gold terminals 12, 13, are deposited on the thermistor material as shown in FIGURE 3. The gold is preferably deposited by sputtering through a stainless steel mask which can be positioned directly in front of the thermistor material during the sputtering process. Apparatus for performing this step is described in co-pending patent application Ser. No. 435,119, filed Feb. 25, 1965, in the names of John G. Fromel and Meyer Sapoff, for Thin Film Resistance Elements and Method, now abandoned.
The thermistor array is next placed in a furnace and heated to 500 centigrade for about fifteen minutes. This heating does not change the thermistor material because it is made up of a mixture of oxides but causes the gold to diffuse partially into the thermistor. After heating, Wires 14 and 15 are welded to terminal areas 16- and 17, and the thermistor is ready for use.
The above described thermistor is obviously a low resistance element since the distances between terminals is short and since the terminals are long. If a high resistance thermistor is desired, the type shown in FIGURE 2 is fabricated. In this case the thermistor material 20 is sputtered onto a base 10 through a mask so that the thermistor material has a long path between its end portions '21 and 22. In order to provide suitable terminals for inclusion in a circuit, gold areas 23 and 24 are deposited through a mask in a manner similar to that described above. The thermistor is next given a heat treatment as described above by heating to 500 centigrade for fifteen minutes. After the heating operation, wire terminals 14 and 15 are added.
FIGURES 4 and 5 illustrate the method of noise re duction due to heating. In FIGURE 4, the substrate 10 carries a layer of thermistor material 22 and a gold terminal 24. As is shown in the drawing, the gold rests on top of the thermistor material but there is no evidence of combination. After the heating cycle, the thermistor material 22 and gold terminal 24 have been diffused together as is indicated by the merging cross-hatching lines in FIGURE 5. This construction accounts for the lack of noise. A platinum wire 15 or any other type of wire may be welded or soldered to the gold terminal 24 and the thermistor is ready for use.
It will be obvious from the above description that many other forms of thermistor material and many other arrangements of gold terminals can be used for this process.
Having thus fully described the invention what is claimed as new and desired to be secured by Letters Patent of the United States is:
1. A thermistor comprising a non-conductive substrate, thermistor material deposited on the substrate to form a resistance, a plurality of gold terminal areas deposited on the thermistor material at predetermined positions to form terminals for the application of an electric voltage, said gold terminals diffused into the thermistor material by the application of heat after the gold has been deposited, and a terminal wire secured to each of said gold terminals for connection to an external circuit.
2. A thermistor as claimed in claim 1 wherein the thermistor material is a mixture of metal oxides.
3. A method of forming thermistors having gold diffused terminals for the reduction of electric circuit noise comprising the following steps: depositing thermistor materia1 on a non-conductive substrate, depositing gold on predetermined terminal areas to jorm circuit terminals, heating the array in a furnace of a temperature within the range of 400 to 600 degrees centigrade for a time interval in excess of 10 minutes, and finally attaching wire terminals to the gold terminals to form an electric circuit component.
4. A method according to claim 3 wherein said gold is sputtered from a target in a rarified atmosphere of inert gas through a mask to deposit only on predetermined areas.
REUBEN EPSTEIN,
References Cited UNITED STATES PATENTS 6/1947 Pearson 33822 8/ 1956 Eisler 338-309 10/1956 Thomsen 338-309 1/1959 Howatt 29612 12/1960 Baasch 338-22 11/1965 Girard 3-3 822 9/ 1966 Smith 29-612 Primary Examiner.
US. Cl. X.R.
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Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3720900A (en) * 1969-07-08 1973-03-13 Mettler Instrumente Ag Thin-film resistance thermometer having low ohmic contact strips
US3776040A (en) * 1971-09-30 1973-12-04 Gibson R Electrical thermometer system and sensor therefor
US3793604A (en) * 1973-04-09 1974-02-19 Gte Sylvania Inc High strength electrical lead for disk type thermistors
US3851291A (en) * 1974-01-17 1974-11-26 Ceramic Magnetics Inc Thin film thermistor
US3885129A (en) * 1974-02-28 1975-05-20 Sprague Electric Co Positive temperature coefficient resistor heater
US3936790A (en) * 1974-07-22 1976-02-03 Multi-State Devices, Ltd. Temperature sensitive resistor having a critical transition temperature of about 140°C
US3966578A (en) * 1974-01-17 1976-06-29 Ceramic Magnetics, Inc. Method of making thin film thermistor
US4037082A (en) * 1976-04-30 1977-07-19 Murata Manufacturing Co., Ltd. Positive temperature coefficient semiconductor heating device
US4115750A (en) * 1973-10-10 1978-09-19 Amp Incorporated Bimetal actuator
US4276535A (en) * 1977-08-23 1981-06-30 Matsushita Electric Industrial Co., Ltd. Thermistor
US4349808A (en) * 1979-05-23 1982-09-14 Dr. Johannes Heidenhain Gmbh Bolometer
DE3229844A1 (en) * 1982-08-11 1984-02-16 Robert Bosch Gmbh, 7000 Stuttgart DEVICE FOR MEASURING THE DIMENSION OF A FLOWING MEDIUM AND METHOD FOR PRODUCING A DEVICE FOR MEASURING THE DIMENSION OF A FLOWING MEDIUM
US5251636A (en) * 1991-03-05 1993-10-12 Case Western Reserve University Multiple thin film sensor system
US5835112A (en) * 1996-10-08 1998-11-10 Hewlett-Packard Company Segmented electrical distribution plane
US6094129A (en) * 1994-11-19 2000-07-25 Daimlerchrysler Ag PTC thermistor and a current limiter device having at least one PTC thermistor
WO2020112600A1 (en) 2018-11-29 2020-06-04 The Procter & Gamble Company Absorbent articles

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2421759A (en) * 1944-01-05 1947-06-10 Bell Telephone Labor Inc Resistor
US2758256A (en) * 1951-10-03 1956-08-07 Technograph Printed Circuits L Electric circuit components
US2765385A (en) * 1954-12-03 1956-10-02 Rca Corp Sintered photoconducting layers
US2868935A (en) * 1957-11-25 1959-01-13 Gulton Ind Inc Thermosensitive resistance element
US2966646A (en) * 1958-06-05 1960-12-27 Servo Corp Of America Flake thermistor
US3219480A (en) * 1961-06-29 1965-11-23 Gen Electric Method for making thermistors and article
US3271844A (en) * 1963-07-15 1966-09-13 Gen Motors Corp Method of making heat sensor unit

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2421759A (en) * 1944-01-05 1947-06-10 Bell Telephone Labor Inc Resistor
US2758256A (en) * 1951-10-03 1956-08-07 Technograph Printed Circuits L Electric circuit components
US2765385A (en) * 1954-12-03 1956-10-02 Rca Corp Sintered photoconducting layers
US2868935A (en) * 1957-11-25 1959-01-13 Gulton Ind Inc Thermosensitive resistance element
US2966646A (en) * 1958-06-05 1960-12-27 Servo Corp Of America Flake thermistor
US3219480A (en) * 1961-06-29 1965-11-23 Gen Electric Method for making thermistors and article
US3271844A (en) * 1963-07-15 1966-09-13 Gen Motors Corp Method of making heat sensor unit

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3720900A (en) * 1969-07-08 1973-03-13 Mettler Instrumente Ag Thin-film resistance thermometer having low ohmic contact strips
US3776040A (en) * 1971-09-30 1973-12-04 Gibson R Electrical thermometer system and sensor therefor
US3793604A (en) * 1973-04-09 1974-02-19 Gte Sylvania Inc High strength electrical lead for disk type thermistors
US4115750A (en) * 1973-10-10 1978-09-19 Amp Incorporated Bimetal actuator
US3966578A (en) * 1974-01-17 1976-06-29 Ceramic Magnetics, Inc. Method of making thin film thermistor
US3851291A (en) * 1974-01-17 1974-11-26 Ceramic Magnetics Inc Thin film thermistor
US3885129A (en) * 1974-02-28 1975-05-20 Sprague Electric Co Positive temperature coefficient resistor heater
US3936790A (en) * 1974-07-22 1976-02-03 Multi-State Devices, Ltd. Temperature sensitive resistor having a critical transition temperature of about 140°C
US4037082A (en) * 1976-04-30 1977-07-19 Murata Manufacturing Co., Ltd. Positive temperature coefficient semiconductor heating device
US4276535A (en) * 1977-08-23 1981-06-30 Matsushita Electric Industrial Co., Ltd. Thermistor
US4349808A (en) * 1979-05-23 1982-09-14 Dr. Johannes Heidenhain Gmbh Bolometer
DE3229844A1 (en) * 1982-08-11 1984-02-16 Robert Bosch Gmbh, 7000 Stuttgart DEVICE FOR MEASURING THE DIMENSION OF A FLOWING MEDIUM AND METHOD FOR PRODUCING A DEVICE FOR MEASURING THE DIMENSION OF A FLOWING MEDIUM
US4616506A (en) * 1982-08-11 1986-10-14 Robert Bosch Gmbh Apparatus for measuring the mass of a flowing medium and method for producing an apparatus for measuring the mass of a flowing medium
US5251636A (en) * 1991-03-05 1993-10-12 Case Western Reserve University Multiple thin film sensor system
US5394883A (en) * 1991-03-05 1995-03-07 Case Western Reserve University Multiple thin film sensor system
US6094129A (en) * 1994-11-19 2000-07-25 Daimlerchrysler Ag PTC thermistor and a current limiter device having at least one PTC thermistor
US5835112A (en) * 1996-10-08 1998-11-10 Hewlett-Packard Company Segmented electrical distribution plane
WO2020112600A1 (en) 2018-11-29 2020-06-04 The Procter & Gamble Company Absorbent articles

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