US3404032A - Method of making film resistor - Google Patents

Method of making film resistor Download PDF

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US3404032A
US3404032A US456119A US45611965A US3404032A US 3404032 A US3404032 A US 3404032A US 456119 A US456119 A US 456119A US 45611965 A US45611965 A US 45611965A US 3404032 A US3404032 A US 3404032A
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film
conductive
resistor
resistance
substrate
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US456119A
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Franklyn M Collins
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Airco Inc
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Air Reduction Co Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • H01C17/26Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material
    • H01C17/265Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material by chemical or thermal treatment, e.g. oxydation, reduction, annealing

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  • ABSTRACT OF THE DISCLOSURE A method for adjusting the value of a resistor including a conductive film of thallium oxide dispersed in glass, according to which the said film is selectively heated in localized areas to render portions of said film comparatively non-conductive.
  • This invention relates to an electrical resistor and a method of making the same; and more particularly it relates to an electrical film resistor which comprises a conductive film or coating as the resistance element deposited on a non-conductive substrate, and a method of adjusting the resistance of the resistor by rendering certain portions of the resistance element relatively non-conducting.
  • I intend to include coatings of metal films, coatings of metal oxides such as tin oxide, titanium oxide, tantalum oxide, etc., and coatings which consist of metal oxides dispersed in glass to form a conductive coating such as disclosed, for example, in United States Patent No. 3,052,573. I also intend to include any other conductive films which may be converted to a high resistance form in accordance with the novel method hereinafter described.
  • One of the newer and more interesting types of films which has shown great promise as a resistance element is an oxide film such as tin oxide. These are usually one to two orders of magnitude thicker than metal or carbon films of similar resistances and therefore resist certain film removal techniques such as sand blasting or arc evaporation.
  • Another interesting resistance film which I shall also refer to as a metal oxide film, is the metal oxide dispersed in glass to form an inorganic coating such as, for example, disclosed in the aforementioned United States Patent No. 3,052,573.
  • My invention consists in the discovery that metal oxide conductive films may be converted to a relatively nonconductive form, which eliminates the necessity of removing portions of the film. I have observed that by raising the temperature of selected portions of these films to certain temperatures, the selected film portions are rendered essentially non-conducting. For example, the resistance of a tin oxide coating on a cylindrical substrate may be adjusted merely by rotating the substrate and film past a controlled heat source of sufficient magnitude to render certain prescribed areas of the film non-conductive. Since no material is removed, this results in the coating on the substrate having a smooth exterior surface without the grooves which are produced when portions of the material must be removed by prior art methods to adjust the resistance of the resistor.
  • the localized heating technique of my invention does not necessarily require direct mechanical contact to the film surface, and this relieves the necessity for very precise dimensional stability on the spiraling mechanism.
  • Mechanical spiraling of the prior art must now be done with very exacting requirements on vibration, substrate diameter, tolerance, etc, to avoid harmful variation in such matters as groove width, depth, and uniformity.
  • FIG. 1 is a cross-sectional view of a cylindrical substrate having a conductive coating or filrn deposited thereon;
  • FIG. 2 is a cross-section of the resistor shown in FIG. 1 after spiraling of the resistor.
  • FIG. 1 shows a sectional view of a resistor 1 having a cylindrical ceramic substrate 2 and a conductive film or coating 3 deposited thereon.
  • terminal means are shown wherein the conductive coating 4 has been applied to the ends of the substrate and leads 5 have been suitably attached to the conductive end coating as by soldering or welding as shown at 6.
  • the conductive coating on the end portion of the substrate is either integral with or in electrical contact with the conductive film 3.
  • the conducting portion 4 may be of the same composition as the resistor conducting material 3 or it may be any other suitable conducting material such as gold, silver, etc.
  • FIG. 2 shows a sectional view of the resistor of FIG. 1 after the resistance value of the resistor has been adjusted by spiraling with my novel process hereinafter described.
  • the physical shape of the resistor shown in FIG. 2 is identical to the resistor shown in FIG. 1.
  • certain portions of the conductive film 3 of FIG. 1 have been rendered essentially non-conductive as shown at 7 in FIG. 2 to adjust the value of the resistor.
  • conventional end caps such as shown in United States Patent No. 3,107,337, may be used to facilitate connection to electrical circuits.
  • the spiral 7 of FIG. 2 is produced by passing the resistor of FIG. 1 past a localized heat source and at the same time rotating the resistor.
  • the relative movement of the heat source and the resistor may be accomplished by any suitable apparatus such as, for example, that disclosed in United States Patent No. 2,838,427.
  • the localized heat used for converting the formerly conducting film to a nonconductive film forms no part of this invention and may be produced by several means, such as a suitable focused electron beam, an arc image furnace, an are projected (carbon arc and focusing optics) furnace, a miniature hydrogen-oxygen flame, or an electric arc struck between the conducting film surface and a moving electrode.
  • Many other heat sources may be advantageously used as long as the source may be properly focused to control the width of the path on the resistor which is heated.
  • the film portion 7 be rendered perfectly insulating.
  • a leakage current of as much as a few percent, depending upon the particular use of the resistor, can be easily tolerated between the film portion 7 and the film portion 3, since the leakage current is electronic current in contrast to the harmful ionic currents which may occur within certain substrate materials. It should therefore be understood that when I speak of the film portion which is heated as being essentially non-conductive, I mean that which has a very high resistance as compared to the portion of the film which is not heated.
  • the mechanism of conversion of the metal oxide from a conductive to an essentially non-conductive form by the heat treatment of the conductive metal oxide is not conclusively known. It is believed to involve an oxidation or reordering of the lattice structure.
  • the stannic oxide is believed to be conductive by virtue of having a deficiency of oxygen (either vacant oxygen lattice sights or interstitial tin ions), i.e. non-stoichiometric. Heating the film to an elevated temperature such as 1000 C.
  • stannic oxide film strip having an initial re- 4 I V sistance of ohms has a resistance of approximately 400,000 ohms after treatment at 1000 C. for a short period of time, such as one second or less. In other words, the resistance was increased by a factor of 4,000.
  • the conduction of the film is believed to be due to the distribution of the metal oxide in crystalline form throughout the glass matrix.
  • I have treated a conductive film of thallium oxide dispersed in glass such as described in copending patent application Ser. No. 286,202, now Patent 3,238,151 entitled Resistor Manufacture, at a temperature exceeding 650 C. for approximately 30 seconds and have found the treated portion to be rendered essentially non-conductive.
  • the film resistance was approximately 1,000 ohms and after treatment the film resistance was approximately 20 million ohms, an increase in resistance by a factor of 20,000. It is believed that the heat treatment of my method destroys the crystalline structure of the conducing film and renders the film amorphous, thus producing an essentially non-conductive glaze.
  • FIGS. 1 and 2 of the drawing are illustrated only as an example of the particular shape of film resistor to which my novel method is applicable.
  • the resistor may take many other conventional forms, such as for example, a resistor printed on a flat substrate.
  • a method of adjusting a conductive coating of thalliurn oxide dispersed in glass on a non-conductive body to a particular value comprising, contacting the surface of said conductive coating with a controlled heat source, adjusting the heat source to a temperature at which the heated portion of the conductive coating is rendered essentially non-conductive, and providing relative movement between said heat source and said conductive coating so that said essentially non-conducting coating is produced on said non-conductive body in a predetermined configuration.
  • a method of making a film resistor comprising coating a non-conductive substrate with a conductive film of thallium oxide dispersed in a glass binder, adjusting a heat source to provide a temperature sufiicient to convert said conductive film to a relatively non-conducting film, applying said temperature to a portion of said conductive film, and providing relative movement of said heat source and said substrate such that selected portions of said conductive film are rendered essentially non-conductive.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Adjustable Resistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Description

1968 F. M. COLLINS 3,404,032
METHOD OF MAKING FILM RESISTOR Filed May 17, 1965 M/l ENTOR FRAN KLYN M. COLLINS By [)W/ W A 7' TORNE Y United States Patent 3,404,032 METHOD OF MAKING FILM RESISTOR Franklyn M. Collins, Lewiston, N.Y., assignor to Air Reduction Company, Incorporated, New York, N.Y., a corporation of New York Filed May 17, 1965, Ser. No. 456,119 4 Claims. (Cl. 117212) ABSTRACT OF THE DISCLOSURE A method for adjusting the value of a resistor including a conductive film of thallium oxide dispersed in glass, according to which the said film is selectively heated in localized areas to render portions of said film comparatively non-conductive.
This invention relates to an electrical resistor and a method of making the same; and more particularly it relates to an electrical film resistor which comprises a conductive film or coating as the resistance element deposited on a non-conductive substrate, and a method of adjusting the resistance of the resistor by rendering certain portions of the resistance element relatively non-conducting.
It should be understood that when I refer to conductive films I intend to include coatings of metal films, coatings of metal oxides such as tin oxide, titanium oxide, tantalum oxide, etc., and coatings which consist of metal oxides dispersed in glass to form a conductive coating such as disclosed, for example, in United States Patent No. 3,052,573. I also intend to include any other conductive films which may be converted to a high resistance form in accordance with the novel method hereinafter described.
In the manufacture of electrical resistors of the type comprising a thin carbon film on the surface of a cylindrical member of ceramic material, it is well known to increase the resistance value of the resistor by cutting a groove through the film and around the substrate in a helical configuration to increase the resistance path. One well known method of cutting such a groove in carbon is by burning the carbon film as it is slowly rotated past a flame. More recent electrical resistors, which consist of a flat, cylindrical, or other geometric shape substrate having a metal or metal oxide conducting film applied thereto, could not be adjusted by burning away portions of the conducting film. It has therefore been necessary to adjust the resistance of these resistors by mechanically removing portions of the resistive film in a predetermined pattern. One well known method of cutting grooves in a cylindrical type film resistor is by rotating and translating the resistance element across a cutting or grinding wheel as shown in United States Patent No. 2,405,485. Another method is by sand blasting the groove as shown in United States Patent No. 2,743,554. In the case of films deposited on fiat subtrates, it is common to chemically etch the film into a zigzag pattern to raise its resistance.
The most common method of cutting the groove in a film which is deposited on a cylindrical substrate is by means of a high speed abrasive wheel. Several disadvantages are inherent in this method which are related to local temperatures generated during the process, mechanical vibrations, and the difiiculty of obtaining a satisfactory smooth edged groove. The overall result is a land of rapidly fluxing width which results in local overheating and consequent deterioration of the element during service.
One of the newer and more interesting types of films which has shown great promise as a resistance element is an oxide film such as tin oxide. These are usually one to two orders of magnitude thicker than metal or carbon films of similar resistances and therefore resist certain film removal techniques such as sand blasting or arc evaporation. Another interesting resistance film, which I shall also refer to as a metal oxide film, is the metal oxide dispersed in glass to form an inorganic coating such as, for example, disclosed in the aforementioned United States Patent No. 3,052,573.
My invention consists in the discovery that metal oxide conductive films may be converted to a relatively nonconductive form, which eliminates the necessity of removing portions of the film. I have observed that by raising the temperature of selected portions of these films to certain temperatures, the selected film portions are rendered essentially non-conducting. For example, the resistance of a tin oxide coating on a cylindrical substrate may be adjusted merely by rotating the substrate and film past a controlled heat source of sufficient magnitude to render certain prescribed areas of the film non-conductive. Since no material is removed, this results in the coating on the substrate having a smooth exterior surface without the grooves which are produced when portions of the material must be removed by prior art methods to adjust the resistance of the resistor.
The advantages ensuing from my novel method of converting selected portions of the conductive film to a relatively non-conductive form by heat treatment of the film are based on the fact that the film and substrate are left mechanically intact after treatment. Rough, ragged, and cracked edges of the film which are produced by former mechanical methods of spiraling, such as by grinding, are not left exposed and do not develop localized heating when the resistor is electrically loaded in service. Also, a known fault of the mechanically formed groove is that it permits the absorption of a film of water onto the surface of the groove which has been found to result in electrolytic action between adjacent spirals, further deteriorating the resistance element. In addition, the localized heating technique of my invention does not necessarily require direct mechanical contact to the film surface, and this relieves the necessity for very precise dimensional stability on the spiraling mechanism. Mechanical spiraling of the prior art must now be done with very exacting requirements on vibration, substrate diameter, tolerance, etc, to avoid harmful variation in such matters as groove width, depth, and uniformity.
While the foregoing description of my novel method of rendering selected portions of a conductive film to a substantially less conductive form has been directed to spiraling of a cylindrical film, it should be understood that my method may be applied to form resistors of many other shapes and forms such as a zigzag pattern on fiat substrates.
It is therefore an object of this invention to produce an electrical resistor. It is an additional object of this invention to produce an electrical film resistor which has been adjusted to a prescribed resistance value without removal of any of the conductive film. It is another object of this invention to provide a novel method for rendering conducting films relatively non-conductive. It is a further object of this invention to provide a method of adjusting the value of a resistor by rendering certain prescribed areas of the resistance material essentially non-conductive. It is still another object of the invention to provide a method of producing a spiral shaped pattern of essentially non-conducting film and a corresponding spiral shaped pattern of conducting film on a cylindrical resistor. Other objects, features, and advantages of this invention will be readily apparent from consideration of the following specification relating to the annexed drawings in which:
FIG. 1 is a cross-sectional view of a cylindrical substrate having a conductive coating or filrn deposited thereon; and
FIG. 2 is a cross-section of the resistor shown in FIG. 1 after spiraling of the resistor.
Referring to the drawings, FIG. 1 shows a sectional view of a resistor 1 having a cylindrical ceramic substrate 2 and a conductive film or coating 3 deposited thereon. In order to facilitate connection of the resistor into a circuit, terminal means are shown wherein the conductive coating 4 has been applied to the ends of the substrate and leads 5 have been suitably attached to the conductive end coating as by soldering or welding as shown at 6. The conductive coating on the end portion of the substrate is either integral with or in electrical contact with the conductive film 3. The conducting portion 4 may be of the same composition as the resistor conducting material 3 or it may be any other suitable conducting material such as gold, silver, etc.
FIG. 2 shows a sectional view of the resistor of FIG. 1 after the resistance value of the resistor has been adjusted by spiraling with my novel process hereinafter described. The physical shape of the resistor shown in FIG. 2 is identical to the resistor shown in FIG. 1. However, certain portions of the conductive film 3 of FIG. 1 have been rendered essentially non-conductive as shown at 7 in FIG. 2 to adjust the value of the resistor. In addition to the method by which leads 5 are electrically connected to the conducting portion 3, conventional end caps such as shown in United States Patent No. 3,107,337, may be used to facilitate connection to electrical circuits.
The spiral 7 of FIG. 2 is produced by passing the resistor of FIG. 1 past a localized heat source and at the same time rotating the resistor. The relative movement of the heat source and the resistor may be accomplished by any suitable apparatus such as, for example, that disclosed in United States Patent No. 2,838,427. The localized heat used for converting the formerly conducting film to a nonconductive film forms no part of this invention and may be produced by several means, such as a suitable focused electron beam, an arc image furnace, an are projected (carbon arc and focusing optics) furnace, a miniature hydrogen-oxygen flame, or an electric arc struck between the conducting film surface and a moving electrode. Many other heat sources may be advantageously used as long as the source may be properly focused to control the width of the path on the resistor which is heated.
It is not essential that the film portion 7 be rendered perfectly insulating. A leakage current of as much as a few percent, depending upon the particular use of the resistor, can be easily tolerated between the film portion 7 and the film portion 3, since the leakage current is electronic current in contrast to the harmful ionic currents which may occur within certain substrate materials. It should therefore be understood that when I speak of the film portion which is heated as being essentially non-conductive, I mean that which has a very high resistance as compared to the portion of the film which is not heated.
The mechanism of conversion of the metal oxide from a conductive to an essentially non-conductive form by the heat treatment of the conductive metal oxide is not conclusively known. It is believed to involve an oxidation or reordering of the lattice structure. For example, where the film is stannic oxide, the stannic oxide is believed to be conductive by virtue of having a deficiency of oxygen (either vacant oxygen lattice sights or interstitial tin ions), i.e. non-stoichiometric. Heating the film to an elevated temperature such as 1000 C. may produce a reordering of defects in the lattice or a very rapid reoxidation of the material closer to stoichiometric proportions at which the film is rendered relatively non-conductive, i.e. the film is converted to the dielectric form. I have found, for example, that a stannic oxide film strip having an initial re- 4 I V sistance of ohms has a resistance of approximately 400,000 ohms after treatment at 1000 C. for a short period of time, such as one second or less. In other words, the resistance was increased by a factor of 4,000.
If the conductive film is an inorganic film consisting of a metal oxide in glass, the conduction of the film is believed to be due to the distribution of the metal oxide in crystalline form throughout the glass matrix. I have treated a conductive film of thallium oxide dispersed in glass such as described in copending patent application Ser. No. 286,202, now Patent 3,238,151 entitled Resistor Manufacture, at a temperature exceeding 650 C. for approximately 30 seconds and have found the treated portion to be rendered essentially non-conductive. Before treatment the film resistance Was approximately 1,000 ohms and after treatment the film resistance was approximately 20 million ohms, an increase in resistance by a factor of 20,000. It is believed that the heat treatment of my method destroys the crystalline structure of the conducing film and renders the film amorphous, thus producing an essentially non-conductive glaze.
It is to be understood that the cylindrical resistor illustrated in FIGS. 1 and 2 of the drawing are illustrated only as an example of the particular shape of film resistor to which my novel method is applicable. The resistor may take many other conventional forms, such as for example, a resistor printed on a flat substrate.
I claim:
1. The method of making a film resistor comprising coating a non-conductive substrate 'with a conductive film of thallium oxide dispersed in glass, and heating preselected portions of said conductive film to a temperature at which said preselected portions of said film are rendered essentially non-conductive wherein the remaining unheated portions of said conductive film form a continuous conductive path.
2. A method of adjusting a conductive coating of thalliurn oxide dispersed in glass on a non-conductive body to a particular value comprising, contacting the surface of said conductive coating with a controlled heat source, adjusting the heat source to a temperature at which the heated portion of the conductive coating is rendered essentially non-conductive, and providing relative movement between said heat source and said conductive coating so that said essentially non-conducting coating is produced on said non-conductive body in a predetermined configuration.
3. A method of making a film resistor comprising coating a non-conductive substrate with a conductive film of thallium oxide dispersed in a glass binder, adjusting a heat source to provide a temperature sufiicient to convert said conductive film to a relatively non-conducting film, applying said temperature to a portion of said conductive film, and providing relative movement of said heat source and said substrate such that selected portions of said conductive film are rendered essentially non-conductive.
4. A method according to claim 3 wherein said selected portions of said film are heated to a temperature exceeding 650 C.
References Cited UNITED STATES PATENTS 3,293,587 12/1966 Robinson 117212 X 3,238,151 3/1966 Kim 252-518 3,220,889 11/1965 Walker 117-212 X 3,169,892 2/1965 Lemelson 117-212 X ALFRED L. LEAVI'IT, Primary Examiner.
A. M. GRIMALDI, Assistant Examiner.
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3916071A (en) * 1973-11-05 1975-10-28 Texas Instruments Inc Ceramic substrate for receiving resistive film and method of forming chromium/chromium oxide ceramic substrate
US4120808A (en) * 1971-12-06 1978-10-17 Owens-Illinois, Inc. Gas discharge dielectric containing a source of boron, gallium, indium, or thallium
EP0018846A1 (en) * 1979-05-04 1980-11-12 New England Instrument Company Electrical resistor and method of making same
US4731560A (en) * 1970-08-06 1988-03-15 Owens-Illinois Television Products, Inc. Multiple gaseous discharge display/memory panel having improved operating life
US4794308A (en) * 1970-08-06 1988-12-27 Owens-Illinois Television Products Inc. Multiple gaseous discharge display/memory panel having improved operating life
US5102506A (en) * 1991-04-10 1992-04-07 The Boeing Company Zinc-based microfuse

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3169892A (en) * 1959-04-08 1965-02-16 Jerome H Lemelson Method of making a multi-layer electrical circuit
US3220889A (en) * 1962-08-02 1965-11-30 Philco Corp Electrical circuit components
US3238151A (en) * 1963-06-07 1966-03-01 Air Reduction Resistor composition
US3293587A (en) * 1965-10-20 1966-12-20 Sprague Electric Co Electrical resistor and the like

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3169892A (en) * 1959-04-08 1965-02-16 Jerome H Lemelson Method of making a multi-layer electrical circuit
US3220889A (en) * 1962-08-02 1965-11-30 Philco Corp Electrical circuit components
US3238151A (en) * 1963-06-07 1966-03-01 Air Reduction Resistor composition
US3293587A (en) * 1965-10-20 1966-12-20 Sprague Electric Co Electrical resistor and the like

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4731560A (en) * 1970-08-06 1988-03-15 Owens-Illinois Television Products, Inc. Multiple gaseous discharge display/memory panel having improved operating life
US4794308A (en) * 1970-08-06 1988-12-27 Owens-Illinois Television Products Inc. Multiple gaseous discharge display/memory panel having improved operating life
US4120808A (en) * 1971-12-06 1978-10-17 Owens-Illinois, Inc. Gas discharge dielectric containing a source of boron, gallium, indium, or thallium
US3916071A (en) * 1973-11-05 1975-10-28 Texas Instruments Inc Ceramic substrate for receiving resistive film and method of forming chromium/chromium oxide ceramic substrate
EP0018846A1 (en) * 1979-05-04 1980-11-12 New England Instrument Company Electrical resistor and method of making same
US4286250A (en) * 1979-05-04 1981-08-25 New England Instrument Company Laser formed resistor elements
US5102506A (en) * 1991-04-10 1992-04-07 The Boeing Company Zinc-based microfuse

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