US3400288A - Sodium vapor discharge lamp with infrared reflecting coating - Google Patents

Sodium vapor discharge lamp with infrared reflecting coating Download PDF

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Publication number
US3400288A
US3400288A US592859A US59285966A US3400288A US 3400288 A US3400288 A US 3400288A US 592859 A US592859 A US 592859A US 59285966 A US59285966 A US 59285966A US 3400288 A US3400288 A US 3400288A
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United States
Prior art keywords
layers
layer
sodium vapor
vapor discharge
approximately
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Expired - Lifetime
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US592859A
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English (en)
Inventor
Groth Rolf
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US Philips Corp
North American Philips Co Inc
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US Philips Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J61/00—Gas-discharge or vapour-discharge lamps
    • H01J61/02—Details
    • H01J61/30—Vessels; Containers
    • H01J61/35—Vessels; Containers provided with coatings on the walls thereof; Selection of materials for the coatings

Definitions

  • the invention relates to a sodium vapor discharge lamp having a transparent envelope which, preferably on the side facing the discharge tube, is coated with a layer which transmits visible light and reflects infrared radiation.
  • the luminous efiiciency of sodium vapor discharge lamps can be improved by using such selectively reflecting layers.
  • the use of thin metal layers as well as of tin dioxide layers for this purpose is already known.
  • the reflecting power of tin dioxide for waves exceeding 4 un, which supply the essential part for the thermal radiation of sodium vapor discharge lumps is smaller than that of a gold layer
  • the permeability of the tin dioxide filter nevertheless is so much higher that both the quantity of light produced and the luminous efiiciency are larger than in a lamp with a gold layer.
  • the selective reflective behavior of highlydoped semiconductor layers in the infrared spectrum is obtained by the variation of the susceptibility of the crystal lattice, as a result of a high concentration of free charge carriers. If a high reflecting power in the infrared region is to be achieved, the concentration of the free charge carriers on the basis of theoretical considerations, must exceed mm. and the mobility of the said carriers must be as large as possible.
  • the indium oxide layers show a higher reflecting power in the infrared spectrum and a higher permeability for sodium light than tin dioxide (S
  • the coating layer substantially consists of doped indium oxide (In O it has been found, that in contrast with the manufacture of layers from tin dioxide it is not necessary for his purpose to take particular measures to obtain reproducible layers having good reflecting powers.
  • FIG. 1 shows reflection curves of prior art and reflective coatings according to the invention.
  • FIG. 2 shows a sodium vapor lamp according to the invention.
  • FIG. 1 shows the infrared reflecting power of two In O layers (curves 1 and 2) and of two Sn0 layers (curves 3 and 4) of the same thickness.
  • the 111203 layers were manufactured at tempeartures of 500 C. (curve 3i) and 400 C. (curve 2) of the supporting plate.
  • the SnO layers were likewise manufactured at 500 C. (curve 3) and 400 C. (curve t).
  • a solution of an indium compound was atomized through a nozzle and the atomized mixture blown in a cold condition against a hot glass plate.
  • the temperature of the glass plate was chosen to be higher than 400 C. and preferably was between 400 C. and the softening temperatures of the glass.
  • aqueous solutions only dull layers are usually obtained which are of no interest as filters. Entirely bright layers are obtained on the contrary if organic solvents, for example, butyl acetate and butanol, are used.
  • Indium compounds, which may be used are, for example, InCl and the other halides of indium.
  • the conductivity of the layers of this type be as high as possible. It should be at least larger than approximately 2X10 ohms cm.* If only indium compounds are used these conductivities cannot be obtained. For example, the conductivity when InCl alone was used, reached values only up to 2 10 ohmscmr The conductivity, and consequently the infrared reflecting power, can be increased considerably if particular dopings are added to the starting solution. The "best results were obtained with Sn-doping (in the form of SnCl and F-doping (in the form of a soluble fluorine compound, for example HF). conductivities were obtained, for example up to 42x10 ohms cm.*
  • a permeability of 91% is obtained for sodium light (A approximately 0.59 pm.) (permeability of the glass plate without layer approximately 9192%
  • the reflecting power in the infrared spectnlm of the layer of 0.31 ,um. was substantially of the same value as that of the 0.46 ,um. layer. Both layers reached a reflecting power of approximately 90% and 10 m.
  • a tin dioxide layer of 0.32 mm. thickness manufactured under optimum conditions had a permeability of 89% for sodium light and an infrared reflecting power of 80%.
  • the surface resistance R decreases with an increasing Sn-addition and reaches a minimum at approximately 2.3 atomic percent.
  • concentration of the free charge carriers N increases when the Sn-addition in creases.
  • the mobility again decreases so that maximum conductivity is reached with approximately 2.3 atomic percent Sn-addition.
  • Additions in this range consequently are at an optimum for optimum conductivity and high infrared reflecting power. In the case of a doping with fluorine, optimum results are obtained with additions of approximately 2 atomic percent relative to indium.
  • the discharge tube 1 (FIG. 2) is surrounded by an evacuated glass outer envelope 4 provided with lamp sockets 2 and 3.
  • the discharge tube includes two electrodes 5 and 6 and contains, in addition to the required quantity of sodium metal, a neon gas filling with a slight addition of argon.
  • lamp I the outer envelope 4 was coated on the inside with a gold layer, 0.015 ,um. thick.
  • lamp II the outer envelope 4 was coated on the inside with a tin dioxide layer, 0.32 m. thick. This layer contained approximately 2 atomic percent of F relative to the quantity of tin as a dopant.
  • lamp III the outer envelope 4 was coated on the inside with an indium oxide layer according to the invention 0.31 m. thick. The layer contained 2.3 atomic percent of Sn relative to the quantity of indium as a dopant.
  • a sodium vapor discharge lamp comprising an envelope permeable to visible radiation surrounding a discharge space in which visible light is produced by an electrical discharge through an ionizable medium containing sodium ions, an infrared radiation reflective coating on the inner wall of said envelope permeable to visible light, said layer consisting essentially of indium oxide (111 0 doped with an amount of an element taken from the group consisting of tin and fluorine at which the surface resistivity of said layer is a minimum.

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  • Vessels And Coating Films For Discharge Lamps (AREA)
  • Surface Treatment Of Glass (AREA)
  • Discharge Lamp (AREA)
US592859A 1965-11-13 1966-11-08 Sodium vapor discharge lamp with infrared reflecting coating Expired - Lifetime US3400288A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEN27625A DE1260627B (de) 1965-11-13 1965-11-13 Natriumdampfentladungslampe

Publications (1)

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US3400288A true US3400288A (en) 1968-09-03

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US592859A Expired - Lifetime US3400288A (en) 1965-11-13 1966-11-08 Sodium vapor discharge lamp with infrared reflecting coating

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US (1) US3400288A (da)
AT (1) AT263938B (da)
BE (1) BE689623A (da)
CH (1) CH460948A (da)
DE (1) DE1260627B (da)
DK (1) DK120348B (da)
ES (1) ES333267A1 (da)
FR (1) FR1503022A (da)
GB (1) GB1140613A (da)
NL (1) NL155128B (da)
NO (1) NO118500B (da)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3546520A (en) * 1967-12-20 1970-12-08 Bell Telephone Labor Inc Vidicon target comprising infrared absorber
US3662208A (en) * 1970-01-27 1972-05-09 Tokyo Shibaura Electric Co Reflector type incandescent lamps
US3662203A (en) * 1969-05-20 1972-05-09 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh High pressure saturated metal vapor, preferably sodium or metal halide vapor discharge lamp
US3931536A (en) * 1974-07-15 1976-01-06 Gte Sylvania Incorporated Efficiency arc discharge lamp
US3932783A (en) * 1969-01-02 1976-01-13 Sylvania Electric Products Inc. Fluorescent lamp containing indium oxide
US3949259A (en) * 1973-08-17 1976-04-06 U.S. Philips Corporation Light-transmitting, thermal-radiation reflecting filter
US3995182A (en) * 1974-11-14 1976-11-30 U.S. Philips Corporation Low-pressure sodium vapor discharge lamp
US4017758A (en) * 1974-04-16 1977-04-12 U.S. Philips Corporation Incandescent lamp with infrared filter
US4140385A (en) * 1976-03-22 1979-02-20 Xerox Corporation Low pressure metal or metal halide lamps for photocopying applications
US4268539A (en) * 1977-11-24 1981-05-19 Tokyo Denshi Kagaku Kabushiki Kaisha Liquid coating composition for forming transparent conductive films and a coating process for using said composition
US4391743A (en) * 1981-11-30 1983-07-05 Nippon Soda Company Limited Composition for depositing metallic oxide film coatings
US4467238A (en) * 1981-09-03 1984-08-21 General Electric Company High-pressure sodium lamp with improved IR reflector
US4490649A (en) * 1982-10-20 1984-12-25 General Electric Company Thermal baffle inside a discharge lamp
WO1986002775A1 (en) * 1984-10-23 1986-05-09 Duro-Test Corporation Variable index film for transparent heat mirrors
US4678960A (en) * 1985-08-01 1987-07-07 General Electric Company Metallic halide electric discharge lamps
US20050116608A1 (en) * 2002-02-06 2005-06-02 Koninklijke Philips Electronics N.V. Mercury-free-high-pressure gas discharge Lamp
US20080048541A1 (en) * 2004-12-20 2008-02-28 Sumrall Ernest N Polymer-thermal shield for ultra-violet lamp
CN102568978A (zh) * 2012-01-18 2012-07-11 山东布莱特辉煌新能源有限公司 一种纳米金属氧化物的使用方法
EP3479394A4 (en) * 2016-06-30 2020-07-22 Yehi Or Light Creation Limited HIGH EFFICIENCY LIGHTING SYSTEM

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4109175A (en) * 1976-03-19 1978-08-22 Matsushita Electronics Corporation High pressure sodium vapor discharge lamp

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2564708A (en) * 1947-09-03 1951-08-21 Corning Glass Works Heat screen
US3221198A (en) * 1961-10-04 1965-11-30 Philips Corp Sodium vapor lamp having a tin oxide coating
US3295002A (en) * 1963-12-27 1966-12-27 Gen Electric Light transmitting electrode including nu-type semiconductive in2o3

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2564708A (en) * 1947-09-03 1951-08-21 Corning Glass Works Heat screen
US3221198A (en) * 1961-10-04 1965-11-30 Philips Corp Sodium vapor lamp having a tin oxide coating
US3295002A (en) * 1963-12-27 1966-12-27 Gen Electric Light transmitting electrode including nu-type semiconductive in2o3

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3546520A (en) * 1967-12-20 1970-12-08 Bell Telephone Labor Inc Vidicon target comprising infrared absorber
US3932783A (en) * 1969-01-02 1976-01-13 Sylvania Electric Products Inc. Fluorescent lamp containing indium oxide
US3662203A (en) * 1969-05-20 1972-05-09 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh High pressure saturated metal vapor, preferably sodium or metal halide vapor discharge lamp
US3662208A (en) * 1970-01-27 1972-05-09 Tokyo Shibaura Electric Co Reflector type incandescent lamps
US3949259A (en) * 1973-08-17 1976-04-06 U.S. Philips Corporation Light-transmitting, thermal-radiation reflecting filter
US4017758A (en) * 1974-04-16 1977-04-12 U.S. Philips Corporation Incandescent lamp with infrared filter
US3931536A (en) * 1974-07-15 1976-01-06 Gte Sylvania Incorporated Efficiency arc discharge lamp
US3995182A (en) * 1974-11-14 1976-11-30 U.S. Philips Corporation Low-pressure sodium vapor discharge lamp
US4140385A (en) * 1976-03-22 1979-02-20 Xerox Corporation Low pressure metal or metal halide lamps for photocopying applications
US4268539A (en) * 1977-11-24 1981-05-19 Tokyo Denshi Kagaku Kabushiki Kaisha Liquid coating composition for forming transparent conductive films and a coating process for using said composition
US4467238A (en) * 1981-09-03 1984-08-21 General Electric Company High-pressure sodium lamp with improved IR reflector
US4391743A (en) * 1981-11-30 1983-07-05 Nippon Soda Company Limited Composition for depositing metallic oxide film coatings
US4490649A (en) * 1982-10-20 1984-12-25 General Electric Company Thermal baffle inside a discharge lamp
WO1986002775A1 (en) * 1984-10-23 1986-05-09 Duro-Test Corporation Variable index film for transparent heat mirrors
US4678960A (en) * 1985-08-01 1987-07-07 General Electric Company Metallic halide electric discharge lamps
US20050116608A1 (en) * 2002-02-06 2005-06-02 Koninklijke Philips Electronics N.V. Mercury-free-high-pressure gas discharge Lamp
US8269406B2 (en) * 2002-02-06 2012-09-18 Koninklijke Philips Electronics N.V. Mercury-free-high-pressure gas discharge lamp
US20080048541A1 (en) * 2004-12-20 2008-02-28 Sumrall Ernest N Polymer-thermal shield for ultra-violet lamp
CN102568978A (zh) * 2012-01-18 2012-07-11 山东布莱特辉煌新能源有限公司 一种纳米金属氧化物的使用方法
CN102568978B (zh) * 2012-01-18 2014-08-13 山东布莱特辉煌新能源有限公司 一种纳米金属氧化物的使用方法
EP3479394A4 (en) * 2016-06-30 2020-07-22 Yehi Or Light Creation Limited HIGH EFFICIENCY LIGHTING SYSTEM

Also Published As

Publication number Publication date
BE689623A (da) 1967-05-10
AT263938B (de) 1968-08-12
NL155128B (nl) 1977-11-15
DE1260627B (de) 1968-02-08
CH460948A (de) 1968-08-15
FR1503022A (fr) 1967-11-24
NL6615717A (da) 1967-05-16
GB1140613A (en) 1969-01-22
ES333267A1 (es) 1967-07-16
NO118500B (da) 1970-01-05
DK120348B (da) 1971-05-17

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