US3394974A - Electron tube device and method of making the same - Google Patents
Electron tube device and method of making the same Download PDFInfo
- Publication number
- US3394974A US3394974A US594183A US59418366A US3394974A US 3394974 A US3394974 A US 3394974A US 594183 A US594183 A US 594183A US 59418366 A US59418366 A US 59418366A US 3394974 A US3394974 A US 3394974A
- Authority
- US
- United States
- Prior art keywords
- tube
- electron
- secondary electron
- envelope
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 230000005540 biological transmission Effects 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 26
- 238000010438 heat treatment Methods 0.000 description 17
- 235000011164 potassium chloride Nutrition 0.000 description 12
- 239000001103 potassium chloride Substances 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910001120 nichrome Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- CCXYPVYRAOXCHB-UHFFFAOYSA-N bismuth silver Chemical compound [Ag].[Bi] CCXYPVYRAOXCHB-UHFFFAOYSA-N 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 2
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 206010057040 Temperature intolerance Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000008543 heat sensitivity Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
- H01J9/125—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes of secondary emission electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/50—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output
- H01J31/506—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output tubes using secondary emission effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/32—Secondary emission electrodes
Definitions
- This invention relates to electron tube devices and methods of manufacturing these tube devices, and more particularly to an electron tube device having at least one transmission type dynode for multiplication of electrons.
- transmissions type dynode is meant a dynode of such a type that it gives off secondary electrons by the excitation of incident primary electrons at its side opposite to the side upon which the primary electrons strike.
- a substrate or supporting layer usually made of aluminum oxide or magnesium. oxide and having a thickness of about 500 to 1000 angstroms is stretched on a ring-shaped member usually made of molybdenum, then the ring-shaped member having the supporting layer is inserted in an exhausted device to deposit an aluminum layer on said supporting layer by means of vacuum evaporation. Thereafter a secondary electron emissive film or layer having an excellent secondary electron emissive property and a high electric resistivity is deposited on the aluminum film also by vacuum evaporation process.
- the secondary electron emissive layer is usually obtained by heating alkali-halide powder such as potassium chloride powder contained in a molybdenum crucible to evaporate potassium chloride (KCl) and deposit the same on the aluminum layer.
- alkali-halide powder such as potassium chloride powder contained in a molybdenum crucible
- KCl potassium chloride
- the transmission type dynode thus produced is then combined with the prefabricated electrode structures and tube envelope to prepare a final construction of the electron tube, which is brought to the final product after exhausting the tube envelope.
- the electron tube obtained by the above prior art method has suffered from marked deterioration of the secondary electron emissive property of the transmission type dynode, because of the fact that the dynode prefabricated in the vacuum evaporating device had to be exposed in atmosphere at the time it was taken out of the evaporating device and inserted in the tube envelope.
- the deterioration of the secondary electron emissive property is attributable to such factors as deliquescence of potassium chloride constituting the secondary electron emissive while it is exposed in the atmosphere, sticking of dust wafting in the atmosphere to the surface of the potassium chloride layer and so forth.
- Another object of this invention is to provide an improved method of manufacturing improved electron tubes having one or more transmission type dynodes.
- a further object of this invention is to provide an improved method of manufacturing electron tubes having excellent characteristics by keeping the transmission type dynode sealed within the tube envelope to prevent exposure of the dynode to the atmosphere.
- a still further object of this invention is to provide an improved method of manufacturing electron tubes having uniform dynode characteristics and substantially free from appearance of ion spots on the fluorescent screen, by carrying out previous heat treatment of the prefabricated tube envelope and electrode structures at a predetermined temperature suflicient to drive off completely the evaporative elements prior to the formation of the transmission type dynode while sufliciently evacuating the tube envelope.
- Another object of this invention is to provide a method of manufacturing electron tubes which can yield a good work eificiency and enables mass production.
- Another object of this invention is to provide a method of manufacturing electron tubes capable of modifying the characteristics of their dynode or dynodes.
- a dynode substrate consisting of an electroconductive layer such as an aluminum layer vapor-deposited on a supporting layer but not deposited with the secondary electron emissive layer and a secondary electron emissive material source disposed in the neighborhood of and facing to the substrate are hermetically sealed in advance within the tube envelope, and then after heat treatment of the tube envelope together with electrode structures while evacuating the tube envelope for eliminating evaporative elements the secondary electron emissive material is heated by a suitable means so as to evaporate it and deposit it on the aluminum layer of the substrate under the continued process of tube envelope evacuation, whereby exposure of the secondary electron emissive layer to the atmosphere, and hence its absorption of moisture and dust is avoided and an electron tube having excellent characteristics can be obtained.
- FIG. 1 is a longitudinal section, with some schematic illustration, illustrating the method of manufacturing a two-stage image brightness intensifier tube embodying this invention
- FIG. 2 is a section take along line AA' and viewed in 3 the direction of arrows illustrating the secondary electron emissive material source in detail;
- FIG. 3 is a section similar to FIG. 2 illustrating a modified means to heat the secondary electron emissive material source
- FIGS. 4 and are enlarged partial perspective views illustrating varieties of heating means to heat the secondary electron emissive material source
- FIGS. 6 and 7 are enlarged partial perspective views illustrating varieties of combinations of the secondary electron emissive material source and means to heat the same.
- FIG. 8 is a diagram illustrating characteristic of the electron tube manufactured in accordance with this invention and those of conventional electron tubes of the same type.
- a substantially cylindrical airtight envelope 1 has one end face plate deposited at the inner side with a fluorescent layer or screen 2 by suitable means such as spraying the fluorescent material.
- a first cylindrical electrode 3 is disposed concentrically with the envelope 1, one end of the electrode being in contact with the fluorescent layer 2.
- These electrodes 3 to 6 all serve to accelerate and focus image electrons given off at a photocathode 19 or transmission type dynodes respectively.
- the end of the third electrode 5 facing the second electrode 4 has an inwardly bent annular integral flange portion on the outer side of which is stretchedly fixed a supporting layer 7 about 500 angstroms in thickness made of aluminum oxide whose side nearer to the second electrode 4 is in turn covered with an aluminum layer 8 serving as the conductive layer.
- These layers 7 and 8 constitute the substrate of the transmission type secondary electron emissive layer.
- Said aluminum oxide layer 7 may be obtained, for example, by oxidizing one side of an aluminum layer having an appropriate thickness, and by taking away the notoxidized part of said aluminum layer in a suitable manner so as to form an aluminum oxide layer about 500 angstorms thick.
- the end of the second cylindrical electrode 4 facing the fluorescent layer 1 is provided with an annular container 9, for instance, made of Nichrome and open toward the third electrode 5 to accommodate a unit 15 of the secondary electron emissive material 14 and means 10 to. heat the same as described hereinbelow in detail.
- the heating means 10 may be a substantially circular Nichrome member as shown in FIG. 4, to which a secondary electron emissive material 14 having a high resistivity and a comparatively high secondary electron emissive ratio such as potassium chloride is fixed at the side facing its substrate.
- one end of the heater 10 is connected to a lead 32 which is in turn connected to a terminal member 12 extending through both of the second electrode 4 and the tube envelope 1 and insulated from the second electrode by an insulator 11, while the other end of the heater is connected through a lead 32' to the second electrode itself which is provided with a terminal member 13 extending through the tube envelope.
- the terminal member 13 serves both for insertion of a directcurrent or alternating-current source 18, FIG. 1, between it and the other terminal member 12 to energize the heater 10 and for applying a voltage to the second electrode in the operation of the tube.
- the heater 10 may, instead of the Nichrome member, comprise platinum-clad molybdenum wire or a tantalum member or other suitable members as well.
- potassium chloride is first dissolved in water and the resultant solution is then applied on the heater 10 and dried. If desired, the applied potassium chloride may be dried by heating in vacuum or inert gas atmosphere, whereby potassium chloride sticks to the heating means 10 excellently.
- a desired amount of potassium chloride may be fixed to the heater by adjusting either the amount of application of the solution or the concentration of the solution.
- the airtight cylindrical envelope 1 is provided with an integral exhaust tubulation 16 leading to an evacuating device 17 as schematically shown in FIG. 1.
- the tube envelope 1 containing various component structures as described hereinabove is first evacuated by the evacuating device 17 until substantially all of the air within the envelope is driven out. Then the entire unit is heated at about 350 C. while continuing the evacuating process so as to drive out most part of such elements that are sticking to the envelope 1 as well as to the various electrode structures and tend to evaporate at an elevated temperature and under a reduced pressure.
- a photocathode 19 is formed on the inner side of the end face plate of the airtight cylindrical envelope 1 remote from the fluorescent layer 2.
- the photocathode 1 is formed by activation of silver-bismuth mixture with cesium, the silver-bismuth mixture suitably disposed somewhere within the envelope 1 may be heated so that it will vaporize and deposit on the above-mentioned inner side of the envelope to form a thin layer consisting of silver and bismuth, which is then activated by cesium vapor introduced Within the envelope, for instance, through the exhaust tubulation 16.
- the heater 10 is energized from the current source 18 while maintaining the process of evacuating the envelope 1 to heat the highly resistive, secondary electron emissive material 14.
- the heated secondary electron emissive material evaporates and is directed toward the third electrode 5 to be deposited on the aluminum layer 8 of the substrate provided on the third electrode, so as to form the secondary electron emissive layer 20 on the substrate without exposure to the atmosphere.
- tubulation 16 is closed up and cut off in a well-known manner to obtain a two-stage brightness intensifier tube generally indicated at 21.
- the potassium chloride (KCl) and lithium fluoride (LiF) are used as the secondary electron emissive material
- the alkali-halide such as sodium chloride (NaCl), potassium bromide (KBr), cesium iodide (Cal) and barium fluoride (BaF
- NaCl sodium chloride
- KBr potassium bromide
- Cal cesium iodide
- BaF barium fluoride
- the correction of the characteristic may be readily made by an additional deposition of the secondary electron emissive material on the already deposited emissive layer 20 by further heating the emissive material source 14 remaining in the container 9.
- the heater 10 is made to have a circular narrow strip form and provided at its end with leads 32 and 32' as shown in FIG. 4.
- it may have other suitable configuration such as that shown in FIG. 5 having an annular groove 39 in which the secondary electron emissive material is to be filled.
- It may also comprise a wire, for example, as shown in FIG. 6 which illustrates a single wire 35 having a coiled portion constituting the heater to which the secondary electron emissive material 36 is fixed.
- it may comprise two or more wires 37 as shown in FIG. 7 suitably twisted together and the secondary electron emissive material is fixed to the twisted portion.
- the invention is not restricted to the above heater structures, but heaters of any other suitable configuration permitting efiicient transfer to heat from the heater to the secondary electron emissive material may be used.
- the method according to the invention is employed to manufacture a twostage image brightness intensifier tube, but the invention is not restricted to the manufacture of the above tube.
- the invention may as well be applied to the manufacture of multi-stage intensifier tubes having two or more transmission type secondary emission or any other electron tubes having at least one transmission type dynode as described above.
- FIG. 8 illustrates plots of transmission secondary electron gain (6) versus primary electron energy (E of five-stage image brightness intensifier tubes manufactured in accordance with this invention and two prior tubes which are manufactured conventionally for the sake of comparison.
- the characteristic curve A is derived from a conventional tube described in an article by D. L. Emberson et a1. entitled Advances in Elec tronics and Electron Physics presented in Academic Press, vol. 16 (1962), pages 127 to 139.
- the characteristic curve B is obtained from another conventional tube manufactured by first prefabricating a transmission type secondary emission dynode within a separate vacuum container and then inserting it in an intensifier image orthicon.
- Characteristic curves C C and C are resulted respectively from three five-stage intensifier tubes of same specifications manufactured in accordance with this invention.
- the transmission secondary electron gain (6) represents a fourth root of the total gain due to four dynodes.
- the dynodes according to the invention yields far greater transmission secondary electron gain with the same primary electron energy than do the conventional dynodes.
- a method of manufacturing an electron tube having at least one electron multiplying dynode of transmission secondary emissive type comprising steps of preparing a gas-tight tube envelope provided with an evacuating tubulation and containing at least one electroconductive base substrate, highly resistive secondary electron emissive material source disposed in the neighborhood of and facing to said substrate, evacuating said tube, envelope through said evacuating tubulation, electrically heating source to evaporate said secondary electron emissive material and deposit the same on said base substrate so as to form afore-said transmission type dynode, and sealing off said evacuating tubulation.
- steps of preparing a gas-tight tube envelope include the steps of preparing said source to deposit in the neighborhood of and facing toward said substrate.
- a method of manufacturing an electron tube according to claim 1, wherein said steps of preparing a gas-tight tube envelope includes the steps of preparing a substantially annular groove to be filled with said secondary electron emissive material as a heater.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Discharge Lamp (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP40070247A JPS4810263B1 (cs) | 1965-11-17 | 1965-11-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
US3394974A true US3394974A (en) | 1968-07-30 |
Family
ID=13426030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US594183A Expired - Lifetime US3394974A (en) | 1965-11-17 | 1966-11-14 | Electron tube device and method of making the same |
Country Status (3)
Country | Link |
---|---|
US (1) | US3394974A (cs) |
JP (1) | JPS4810263B1 (cs) |
GB (1) | GB1142518A (cs) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2700626A (en) * | 1949-12-09 | 1955-01-25 | Bell Telephone Labor Inc | Secondary electron emissive electrodes |
US2877078A (en) * | 1954-04-13 | 1959-03-10 | Du Mont Allen B Lab Inc | Method of treating phototubes |
-
1965
- 1965-11-17 JP JP40070247A patent/JPS4810263B1/ja active Pending
-
1966
- 1966-11-14 US US594183A patent/US3394974A/en not_active Expired - Lifetime
- 1966-11-17 GB GB51588/66A patent/GB1142518A/en not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2700626A (en) * | 1949-12-09 | 1955-01-25 | Bell Telephone Labor Inc | Secondary electron emissive electrodes |
US2877078A (en) * | 1954-04-13 | 1959-03-10 | Du Mont Allen B Lab Inc | Method of treating phototubes |
Also Published As
Publication number | Publication date |
---|---|
JPS4810263B1 (cs) | 1973-04-02 |
GB1142518A (en) | 1969-02-12 |
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