US3354334A - Storage tube target and method for making same - Google Patents

Storage tube target and method for making same Download PDF

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Publication number
US3354334A
US3354334A US263131A US26313163A US3354334A US 3354334 A US3354334 A US 3354334A US 263131 A US263131 A US 263131A US 26313163 A US26313163 A US 26313163A US 3354334 A US3354334 A US 3354334A
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US
United States
Prior art keywords
remanence
insulating layer
targets
storage tube
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US263131A
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English (en)
Inventor
Bonvalot Pierre
Courtan Bernard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
CSF Compagnie Generale de Telegraphie sans Fil SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSF Compagnie Generale de Telegraphie sans Fil SA filed Critical CSF Compagnie Generale de Telegraphie sans Fil SA
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Publication of US3354334A publication Critical patent/US3354334A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36Photoelectric screens; Charge-storage screens
    • H01J29/39Charge-storage screens
    • H01J29/44Charge-storage screens exhibiting internal electric effects caused by particle radiation, e.g. bombardment-induced conductivity
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/4981Utilizing transitory attached element or associated separate material

Definitions

  • the present invention relates to a process for manufacturing storage tube targets and to the targets produced thereby. More particularly, it relates to a process for manufacturing targets having induced conductivity is characterized by preliminarily activating an insulating material with an activating metal. The present invention also concerns targets of induced conductivity having a porous insulating layer exhibiting induced conductivity properties and a remanence that may be accurately predetermined.
  • induced conductivity targets that is, targets comprising a metallic layer in contact with an insulating layer made of a dielectric material, such as zinc sulfide, having the property of becoming momentarily conductive when electrons quickly traverse the insulating layer, by liberating along the paths thereof a large quantity of secondary electrons.
  • the present invention is directed to a manufacturing process which produces a target substantially free from these shortcomings, that is, a target which has a substantially reduced minimum remanence during erasure, and which may be manufactured with a predetermined value for the remanence of subsistence of the relief and which can be selected from a large range of desirable remanences.
  • Another object of the present invention resides in a process for the manufacture of induced conductivity targets for storage tubes wherein the various steps may "ice be so chosen and controlled as to provide a suitable selection from a substantial number of different remanences.
  • Still a further object of the present invention resides in a process for the manufacture of induced conductivity targets which readily lends itself to the manufacture of targets having a predetermined remanence which may be readily controlled and maintained within desired limits.
  • Another object of the present invention resides in a method for producing induced conductivity targets for storage tubes which possess a minimum remanence, during erasure, which is compatible with values desired in practice.
  • a further object of the present invention resides in an improved target with induced conductivity for storage tubes having remanence characteristics which are very satisfactory for practical applications.
  • Still another object of the present invention resides in a target with induced conductivity wherein the remanence may be predetermined and is of such a value that it is suitable for practical use.
  • the process according to the present invention comprises utilizing the insulating material having the property of induced conductivity and activated, in that state by an activating metal, such as manganese, copper or analogous material, this metal being present in an amount of 0.1 to 10% by weight, depending on the desired value of the remanence.
  • This activated substance is then deposited on the metallic layer, for example, aluminum or on a film of collodion which is utilized as a temporary support between the metallic layer and the insulating layer.
  • the activated substance is deposited on the metallic layer by vaporization under vacuum using conditions such that the deposited insulating layer is porous.
  • the porosity of the insulating layer produces the desired efiect on the minimum remanence during erasure. Since the capacity of a porous structure is reduced with respect to that of a dense structure of the same materials and dimensions in such a manner that the time constant of discharge is reduced, the erasure requires less time. However, if this porous structure were made of a dielectric material such as pure Zinc sulfide, its remanence of subsistence of the relief would also be very slight with respect to a dense structure, and would find itself outside of the range of desirable remanences.
  • an activator such as Mn or Cu or an analogous material to the primary material intended to be vaporized under vacuum permits the restablishment of this remanence and brings the same back within the limits of the desirable range. Furthermore, since the value of the remanence within this range is a function of the dosage of the activator, by a suitable choice of the dosage it is possible to manufacture a target with predetermined remanence.
  • zinc sulfide is activated with manganese in an amount of about 0.1% to 10% by weight, to obtain a target in which the remanence of subsistence of the relief is equal to 2 to 20 times the time required by the signal to attain one-half of its initial value, depending on the amount of activator used.
  • the activated zinc sulfide is then vaporized, for example, on a film of aluminum or collodion under the conditions well known to one skilled in the art to obtain a porous deposit.
  • Well known process conditions include, for example, a vacuum of about 10" mm. Hg. and a relatively low temperature of about 950 C. The minimum remanence during the erasure of this target is less than two seconds.
  • the targets manufactured by the process of the aforementioned prior art patents have a minimum remanence during erasure of not less than 8 seconds, and the remanence of subsistence of the relief was always fixed, except for deviations in manufacture, to the same value, for example in tens of seconds, and was not controllable or adjustable.
  • a method for controlling, during manufacture, the remanence time of a storage tube target having a porous insulating layer providing induced conductivity properties compirsing the steps of:
  • a method for controlling, during manufacture, the remanence time of a storage tube target having a porous insulating layer providing induced conductivity properties comprising the steps of:
  • a storage tube target having a predetermined remanence comprising a thin aluminum layer support and a porous insulating layer deposited on said thin aluminum layer support, said insulating layer having induced conductivity properties and consisting essentially of a zinc sulfide insulating material mixed with about 0.1 to 10% by weight of an activating metal selected from the group consisting of manganese and copper, said activating metal having activating properties for the zinc sulfide.
  • a process for producing storage tube targets which comprises coating one surface of an aluminum layer with an insulating layer having induced conductivity properties and consisting essentially of a zinc sulfide insulating material mixed with about 0.1 to 10% by weight of an activating metal having activating properties for said insulating material, said activating metal selected from the group consisting of manganese and copper, and vaporizing said insulating layer in a vacuum and at a temperature sufiicient to produce a porous insulating layer.
  • a process for producing storage tube targets which comprises coating one surface of an aluminum layer with an insulating layer having induced conductivity porperties and consisting essentially of a Zinc sulfide insulating material mixed with about 0.1 to 10% by Weight of an activating metal having activating properties for said insulating material, said activating metal selected from the group consisting of manganese and copper, and vaporizing said insulating layer in a vacuum of about 10- mm. Hg and at a temperature of about 950 C.
  • a process for producing storage tube targets which comprises coating one surface of a film of collodion with a metallic layer of aluminum, coating the other surface of said film with an insulating layer having induced conductivity properties and consisting essentially of a zinc sulfide insulating material mixed with about 0.1 to 10% by weight of an activating metal having activating properties for said insulating material, said activating metal selected from the group consisting of manganese and copper, vaporizing.
  • said insulating layer in a vacuum at a temperature sufiicient to produce. a porous insulating layer, and baking said coated film at a temperature sulficient to eliminate said collodion film, whereby said insulating layer directly coats said metallic layer.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Battery Electrode And Active Subsutance (AREA)
US263131A 1962-03-28 1963-03-06 Storage tube target and method for making same Expired - Lifetime US3354334A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR892478A FR1327109A (fr) 1962-03-28 1962-03-28 Procédé de fabrication de cibles à conductibilité induite pour tubes à mémoire

Publications (1)

Publication Number Publication Date
US3354334A true US3354334A (en) 1967-11-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
US263131A Expired - Lifetime US3354334A (en) 1962-03-28 1963-03-06 Storage tube target and method for making same

Country Status (5)

Country Link
US (1) US3354334A (enrdf_load_stackoverflow)
DE (1) DE1201495B (enrdf_load_stackoverflow)
FR (1) FR1327109A (enrdf_load_stackoverflow)
GB (1) GB962084A (enrdf_load_stackoverflow)
NL (1) NL290716A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3408531A (en) * 1966-06-10 1968-10-29 Westinghouse Electric Corp Storage system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3048502A (en) * 1959-05-22 1962-08-07 Westinghouse Electric Corp Method of making a photoconductive target
US3207937A (en) * 1960-05-19 1965-09-21 Gen Electric Thin film storage electrode

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL207672A (enrdf_load_stackoverflow) 1955-06-08 1900-01-01

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3048502A (en) * 1959-05-22 1962-08-07 Westinghouse Electric Corp Method of making a photoconductive target
US3207937A (en) * 1960-05-19 1965-09-21 Gen Electric Thin film storage electrode

Also Published As

Publication number Publication date
DE1201495B (de) 1965-09-23
NL290716A (enrdf_load_stackoverflow)
GB962084A (en) 1964-06-24
FR1327109A (fr) 1963-05-17

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