US3354334A - Storage tube target and method for making same - Google Patents
Storage tube target and method for making same Download PDFInfo
- Publication number
- US3354334A US3354334A US263131A US26313163A US3354334A US 3354334 A US3354334 A US 3354334A US 263131 A US263131 A US 263131A US 26313163 A US26313163 A US 26313163A US 3354334 A US3354334 A US 3354334A
- Authority
- US
- United States
- Prior art keywords
- remanence
- insulating layer
- targets
- storage tube
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 22
- 238000003860 storage Methods 0.000 title description 13
- 230000003213 activating effect Effects 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 229910052748 manganese Inorganic materials 0.000 claims description 9
- 239000011572 manganese Substances 0.000 claims description 9
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 description 9
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 9
- 239000005083 Zinc sulfide Substances 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 229910052984 zinc sulfide Inorganic materials 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000008016 vaporization Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000012190 activator Substances 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/44—Charge-storage screens exhibiting internal electric effects caused by particle radiation, e.g. bombardment-induced conductivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4981—Utilizing transitory attached element or associated separate material
Definitions
- the present invention relates to a process for manufacturing storage tube targets and to the targets produced thereby. More particularly, it relates to a process for manufacturing targets having induced conductivity is characterized by preliminarily activating an insulating material with an activating metal. The present invention also concerns targets of induced conductivity having a porous insulating layer exhibiting induced conductivity properties and a remanence that may be accurately predetermined.
- induced conductivity targets that is, targets comprising a metallic layer in contact with an insulating layer made of a dielectric material, such as zinc sulfide, having the property of becoming momentarily conductive when electrons quickly traverse the insulating layer, by liberating along the paths thereof a large quantity of secondary electrons.
- the present invention is directed to a manufacturing process which produces a target substantially free from these shortcomings, that is, a target which has a substantially reduced minimum remanence during erasure, and which may be manufactured with a predetermined value for the remanence of subsistence of the relief and which can be selected from a large range of desirable remanences.
- Another object of the present invention resides in a process for the manufacture of induced conductivity targets for storage tubes wherein the various steps may "ice be so chosen and controlled as to provide a suitable selection from a substantial number of different remanences.
- Still a further object of the present invention resides in a process for the manufacture of induced conductivity targets which readily lends itself to the manufacture of targets having a predetermined remanence which may be readily controlled and maintained within desired limits.
- Another object of the present invention resides in a method for producing induced conductivity targets for storage tubes which possess a minimum remanence, during erasure, which is compatible with values desired in practice.
- a further object of the present invention resides in an improved target with induced conductivity for storage tubes having remanence characteristics which are very satisfactory for practical applications.
- Still another object of the present invention resides in a target with induced conductivity wherein the remanence may be predetermined and is of such a value that it is suitable for practical use.
- the process according to the present invention comprises utilizing the insulating material having the property of induced conductivity and activated, in that state by an activating metal, such as manganese, copper or analogous material, this metal being present in an amount of 0.1 to 10% by weight, depending on the desired value of the remanence.
- This activated substance is then deposited on the metallic layer, for example, aluminum or on a film of collodion which is utilized as a temporary support between the metallic layer and the insulating layer.
- the activated substance is deposited on the metallic layer by vaporization under vacuum using conditions such that the deposited insulating layer is porous.
- the porosity of the insulating layer produces the desired efiect on the minimum remanence during erasure. Since the capacity of a porous structure is reduced with respect to that of a dense structure of the same materials and dimensions in such a manner that the time constant of discharge is reduced, the erasure requires less time. However, if this porous structure were made of a dielectric material such as pure Zinc sulfide, its remanence of subsistence of the relief would also be very slight with respect to a dense structure, and would find itself outside of the range of desirable remanences.
- an activator such as Mn or Cu or an analogous material to the primary material intended to be vaporized under vacuum permits the restablishment of this remanence and brings the same back within the limits of the desirable range. Furthermore, since the value of the remanence within this range is a function of the dosage of the activator, by a suitable choice of the dosage it is possible to manufacture a target with predetermined remanence.
- zinc sulfide is activated with manganese in an amount of about 0.1% to 10% by weight, to obtain a target in which the remanence of subsistence of the relief is equal to 2 to 20 times the time required by the signal to attain one-half of its initial value, depending on the amount of activator used.
- the activated zinc sulfide is then vaporized, for example, on a film of aluminum or collodion under the conditions well known to one skilled in the art to obtain a porous deposit.
- Well known process conditions include, for example, a vacuum of about 10" mm. Hg. and a relatively low temperature of about 950 C. The minimum remanence during the erasure of this target is less than two seconds.
- the targets manufactured by the process of the aforementioned prior art patents have a minimum remanence during erasure of not less than 8 seconds, and the remanence of subsistence of the relief was always fixed, except for deviations in manufacture, to the same value, for example in tens of seconds, and was not controllable or adjustable.
- a method for controlling, during manufacture, the remanence time of a storage tube target having a porous insulating layer providing induced conductivity properties compirsing the steps of:
- a method for controlling, during manufacture, the remanence time of a storage tube target having a porous insulating layer providing induced conductivity properties comprising the steps of:
- a storage tube target having a predetermined remanence comprising a thin aluminum layer support and a porous insulating layer deposited on said thin aluminum layer support, said insulating layer having induced conductivity properties and consisting essentially of a zinc sulfide insulating material mixed with about 0.1 to 10% by weight of an activating metal selected from the group consisting of manganese and copper, said activating metal having activating properties for the zinc sulfide.
- a process for producing storage tube targets which comprises coating one surface of an aluminum layer with an insulating layer having induced conductivity properties and consisting essentially of a zinc sulfide insulating material mixed with about 0.1 to 10% by weight of an activating metal having activating properties for said insulating material, said activating metal selected from the group consisting of manganese and copper, and vaporizing said insulating layer in a vacuum and at a temperature sufiicient to produce a porous insulating layer.
- a process for producing storage tube targets which comprises coating one surface of an aluminum layer with an insulating layer having induced conductivity porperties and consisting essentially of a Zinc sulfide insulating material mixed with about 0.1 to 10% by Weight of an activating metal having activating properties for said insulating material, said activating metal selected from the group consisting of manganese and copper, and vaporizing said insulating layer in a vacuum of about 10- mm. Hg and at a temperature of about 950 C.
- a process for producing storage tube targets which comprises coating one surface of a film of collodion with a metallic layer of aluminum, coating the other surface of said film with an insulating layer having induced conductivity properties and consisting essentially of a zinc sulfide insulating material mixed with about 0.1 to 10% by weight of an activating metal having activating properties for said insulating material, said activating metal selected from the group consisting of manganese and copper, vaporizing.
- said insulating layer in a vacuum at a temperature sufiicient to produce. a porous insulating layer, and baking said coated film at a temperature sulficient to eliminate said collodion film, whereby said insulating layer directly coats said metallic layer.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Battery Electrode And Active Subsutance (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR892478A FR1327109A (fr) | 1962-03-28 | 1962-03-28 | Procédé de fabrication de cibles à conductibilité induite pour tubes à mémoire |
Publications (1)
Publication Number | Publication Date |
---|---|
US3354334A true US3354334A (en) | 1967-11-21 |
Family
ID=8775493
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US263131A Expired - Lifetime US3354334A (en) | 1962-03-28 | 1963-03-06 | Storage tube target and method for making same |
Country Status (5)
Country | Link |
---|---|
US (1) | US3354334A (enrdf_load_stackoverflow) |
DE (1) | DE1201495B (enrdf_load_stackoverflow) |
FR (1) | FR1327109A (enrdf_load_stackoverflow) |
GB (1) | GB962084A (enrdf_load_stackoverflow) |
NL (1) | NL290716A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3408531A (en) * | 1966-06-10 | 1968-10-29 | Westinghouse Electric Corp | Storage system |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3048502A (en) * | 1959-05-22 | 1962-08-07 | Westinghouse Electric Corp | Method of making a photoconductive target |
US3207937A (en) * | 1960-05-19 | 1965-09-21 | Gen Electric | Thin film storage electrode |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL207672A (enrdf_load_stackoverflow) | 1955-06-08 | 1900-01-01 |
-
0
- NL NL290716D patent/NL290716A/xx unknown
-
1962
- 1962-03-28 FR FR892478A patent/FR1327109A/fr not_active Expired
-
1963
- 1963-03-06 US US263131A patent/US3354334A/en not_active Expired - Lifetime
- 1963-03-19 GB GB10758/63A patent/GB962084A/en not_active Expired
- 1963-03-26 DE DEC29482A patent/DE1201495B/de active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3048502A (en) * | 1959-05-22 | 1962-08-07 | Westinghouse Electric Corp | Method of making a photoconductive target |
US3207937A (en) * | 1960-05-19 | 1965-09-21 | Gen Electric | Thin film storage electrode |
Also Published As
Publication number | Publication date |
---|---|
DE1201495B (de) | 1965-09-23 |
NL290716A (enrdf_load_stackoverflow) | |
GB962084A (en) | 1964-06-24 |
FR1327109A (fr) | 1963-05-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Jacobs et al. | The mechanism of field dependent secondary emission | |
US2842706A (en) | Cold cathode vacuum tube | |
US3085913A (en) | Vacuum evaporation method | |
US4038167A (en) | Method of forming a thin film capacitor | |
US3849276A (en) | Process for forming reactive layers whose thickness is independent of time | |
US2586304A (en) | Protection of phosphors from attack by alkali vapors | |
US4675092A (en) | Method of producing thin film electroluminescent structures | |
US3058842A (en) | Evaporation method | |
US3354334A (en) | Storage tube target and method for making same | |
US3113889A (en) | Method of vacuum depositing superconductive metal coatings | |
US2402900A (en) | Liquid settling process | |
Flanagan et al. | Grain boundary diffusion of zinc in copper | |
US3106488A (en) | Improved method of forming a photoconductive layer on a translucent surface | |
US3132046A (en) | Method for the deposition of thin films by electron bombardment | |
US2842463A (en) | Vapor deposited metal films | |
US3293085A (en) | Electrically resistive barrier films and elements embodying the same | |
US2776908A (en) | Method of producing monolayer electrode screens | |
GB813854A (en) | Screen for direct-viewing storage tube | |
US3239731A (en) | Self-healing thin-film capacitor | |
US4675091A (en) | Co-sputtered thermionic cathodes and fabrication thereof | |
US3395304A (en) | Storage tube screens | |
US3647662A (en) | Technique for the fabrication of hafnium nitride resistor | |
US2439647A (en) | Photoelectric tube and method of manufacturing same | |
US3428541A (en) | Arc deposition of platinum-carbon electrically resistive films | |
US3630871A (en) | Cathodic sputtering method |