US3342970A - Apparatus for crucible-free zone melting - Google Patents
Apparatus for crucible-free zone melting Download PDFInfo
- Publication number
- US3342970A US3342970A US430361A US43036165A US3342970A US 3342970 A US3342970 A US 3342970A US 430361 A US430361 A US 430361A US 43036165 A US43036165 A US 43036165A US 3342970 A US3342970 A US 3342970A
- Authority
- US
- United States
- Prior art keywords
- rod
- concentrator
- coil
- melting
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/22—Furnaces without an endless core
- H05B6/30—Arrangements for remelting or zone melting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Definitions
- Apparatus for crucible-free zone melting of a crystalline rod includes an induction heating coil for forming a melting zone in the rod.
- the coil surrounds and is spaced from the rod and is energizable to produce an inductive heating field around the rod.
- the coil and rod are relatively movable in the direction of the rod axis so as to pass the melting zone along the rod.
- the rod extends through an opening of a concentrator device which is located in the field between the heating coil and the melting zone and comprises a plurality of parts movable relative to each other within the field for varying the size of the opening so as to accommodate rods of respectively varying cross section therein.
- the concentrator device can be a subdivided ring with a silver surface, the subdivision of the ring being radially movable, or can comprise a pair of silvered metal strips aligned end to end and formed 3,,34Z,9 70 Patented Sept. '19, 1967 ticularly of semiconductor material, having two holders gripping the ends of the body and an induction coil surrounding and spaced from the rod for producing the melting zone in the rod, the induction coil being movable relative to the longitudinal axis of the rod.
- a concentrator device surrounding the rod is arranged in the field between the heating coil and the melting zone.
- the concentrator is divided into a plurality of parts adjustable with respect to each other so as to vary the area encompassed thereby.
- My invention relates to apparatus for crucible-free zone melting of a rod-shaped member of crystalline material.
- Such apparatus is known in diiferent embodiments.
- a crystalline rod that is to be processed is located in an evacuated vessel or in a vessel filled with protective gas.
- the rod consists, for example, of a semiconductor material such as germanium orsilicon, or a metal, such as tungsten or molybdenum.
- the ends of the rod are gripped by holders and the rod is usually located in a vertical position.
- a heating device heats the rod along a narrow length thereof and thus forms a melting zone. This melting zone is passed along the length of the rod through relative movement of the heating device and the rod with respect to the longitudinal axis of the rod.
- an induction heating coil which surrounds and is spaced from the rod, serves as a heating device for the production of the melting zone.
- the heating coil can be energized with a current having a frequency of 1-5 MHz.
- the semiconductor body can thus be melted by inductive heating produced by the coil.
- the heating coil must surround the semiconductor rod relatively closely, in order to provide good coupling. This, of course, limits the growth diameter of the rod.
- a further object of the invention is to provide a device which would aid also in producing crystalline rods whose cross-sectional dimensions vary along the rod length.
- FIG. 1 is an elevational view of an embodiment of my invention showing a concentrator and induction heating coil in position around the molten zone of a crystalline rod.
- FIG. 2 is a top plan view of FIG. 1 with the induction heating coil removed.
- FIGS. 3 and 4 areplan and elevational views, respectively, of an additional embodiment of a concentrator constructed in accordance with my invention.
- a melting zone 4 produced in a rod-shaped body 2, which may, for example, have a circular cross section.
- the melting zone 4 is produced by heating with an induction heating coil 3, which may be in the form of a fiat, helically wound coil.
- the field of the heat-' ing coil 3 is concentrated by a concentrator device consisting of the parts 5a, 5b, 5c and 5d (FIG. 2).
- Concentrators per se are known from the inductive heating arts. They constitute divided or split rings of electrically conductive material which are located in the field of an induction coil.
- a closed ring does not constitute a concentrator, because, with a closed ring, a field opposite to the field of the heating coil is produced, and the heating effect is completely nullified.
- a concentrator is used for crucible-free zone melting
- it can consist, preferably, of silver or of a copper component provided with a silver coating and connected preferably to a cooling loop, for example a water cooling system.
- the German published patent application No. 1,094,710 discloses a method by means of which monocrystals are produced byseed crystals 'having a diameter considerably smaller than that of the semiconductor rod being processed.
- FIG. 1 shows such a crystal seed 6.
- the narrow crystal seed may have a diameter of approximately 3 to 5 mm.
- the semiconductor rod 2 may have a diameter of 12 to 40 mm.
- FIG. 2 indicates by the double-headed arrows the directions of motion of the parts 5a-5d of the concentrator 5,
- the device of my invention is also especially employable in cases where a desired change in the cross section of the rod, i.e. an enlargement or reduction, is tobe effected by means of the crucible-free zone melting process.
- FIGS. 1 and 2 illustrate a concentrator which has a circular ring-shaped cross section and which is subdivided into four parts. It is, of course, understood that the concentrator may also be divided into two or three or more than four parts.
- the shape of the opening in the concentrator may also conform to the cross sectional shape of the rod being treated which can be square or rectangular, for example.
- FIGS. 3 and 4 show another embodiment of a concentrator according to the invention pnd consisting of two strips 11 and 12, aligned end to end and formed with V- shaped notches at the mutually adjacent ends.
- the strips 11, 12 are movable in the directions of the two-headed arrows.
- the concentrator can be made tolie completely inside the winding of the heating coil and be movable only from the outside of the heating coil. It is also possible to provide a concentrator above or below or both above and below the heating coil.
- the device of my invention it is advisable to have all parts of the device of my invention enclosed by a relatively large vessel, which serves for maintaining the necessary vacuum, or the protective gas atmosphere, respectively as shown with related equipment, for example, in my Patent No. 2,972,525.
- the concentrator may also be placed in a relatively narrow vessel, for example a quartz tube, while the heating coil in located outside of the vessel, for example surrounding the quartz tube.
- Relative motion between the heating coil and the treated rod may be effected by movement of the heating coil while the rod is tightly gripped inside the vessel, or by moving the rod while the heating coil is held fixed.
- Movement of the parts 5a-5c can be effected by suitably manipulating the holder rods 7 secured thereto.
- Movement of the strips 11, 12 can be effected by suitably manipulating the distant ends thereof.
- an induction heating coil for forming a melting zone in the rod, said coil surrounding and spaced from the rod and being energizable to produce an inductive heating field around the rod, said coil and rod being relatively movable in the direction of the rod axis so as to move the melting zone along the rod, and a concentrator device having an opening through which the rod extends, said concentrator device being located in the field between the heating coil and the melting zone and comprising a plurality of parts movable relative to each other within said field for varying the size of said opening so as to accommodate rods of respectively varying cross section therein.
- an induction heating coil for forming a melting zone in the rod, said coil surrounding and spaced from the rod and being energizable to produce an inductive heating field around the rod, said coil and rod being relatively movable in the direction of the rod axis so as to move the melting zone along the rod, and a concentrator device having an opening through which the rod extends, said concentrator device being locate-d below the heating coil in the field between the heating coil and the melting Zone and comprising a plurality of parts movable relative to each other within said field for varying the size of said opening so as to accommodate rods of respectively varying cross section therein.
- an induction heating coil for forming a melting zone in the rod, said coil surrounding and spaced from the rod and being energizable to produce an inductive heating field around the rod, said coil and rod being relatively movable in the direction of the rod axis so as to move the melting zone along the rod, and a concentrator having an opening through which the rod extends, said concentrator being located in the field between the heating coil and the melting zone and comprising a subdivided ring having a silver surface, the subdivisions of said ring being radially movable for varying the inner diameter of said ring whereby rods of varying cross-sectional area or shape can be accommodated by said concentrator.
- an induction heating coil for forming a melting zone in the rod, said coil surrounding and spaced from the rod and being energizable to produce an inductive heating field around the rod, said coil and rod being relatively movable in the direction of the rod axis so as to move the melting zone along the rod, and a concentrator comprising a pair of metal strips aligned end to end each formed with a V-shaped notch at mutually adjacent ends thereof defining an aperture through which the rod extends, said concentrator being located in the field between the heating coil and the melting zone, and the metal strips of said concentrator having a silver surface and being movable toward and away from each other for varying the size of said aperture whereby rods of varying cross-sectional area or shape can be accommodated by said concentrator.
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES89439A DE1260439B (de) | 1964-02-08 | 1964-02-08 | Vorrichtung zum tiegelfreien Zonenschmelzen |
Publications (1)
Publication Number | Publication Date |
---|---|
US3342970A true US3342970A (en) | 1967-09-19 |
Family
ID=7515113
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US430361A Expired - Lifetime US3342970A (en) | 1964-02-08 | 1965-02-04 | Apparatus for crucible-free zone melting |
Country Status (7)
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3660062A (en) * | 1968-02-29 | 1972-05-02 | Siemens Ag | Method for crucible-free floating zone melting a crystalline rod, especially of semi-crystalline material |
US3935059A (en) * | 1969-07-21 | 1976-01-27 | U.S. Philips Corporation | Method of producing single crystals of semiconductor material by floating-zone melting |
US4109128A (en) * | 1975-09-01 | 1978-08-22 | Wacker-Chemitronik Gesellschaft Fur Elektronik-Grundstoffe Mbh | Method for the production of semiconductor rods of large diameter and device for making the same |
US4184135A (en) * | 1978-04-10 | 1980-01-15 | Monsanto Company | Breakapart single turn RF induction apparatus |
DE3143146A1 (de) * | 1981-10-30 | 1983-05-11 | Siemens AG, 1000 Berlin und 8000 München | Als flachspule ausgebildete induktionsheizspule zum tiegelfreien zonenschmelzen |
DE3226713A1 (de) * | 1982-07-16 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Als flachspule ausgebildete induktionsheizspule zum tiegelfreien zonenschmelzen |
DE3229461A1 (de) * | 1982-08-06 | 1984-02-09 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum tiegelfreien zonenschmelzen eines, insbesondere aus silicium bestehenden halbleiterstabes |
US4458127A (en) * | 1981-05-26 | 1984-07-03 | Park-Ohio Industries, Inc. | Inductor for annealing work hardened portions of structural beams |
US4549051A (en) * | 1984-02-15 | 1985-10-22 | Ness Richard A | Induction heating device for nozzles of containers |
US5009860A (en) * | 1987-05-25 | 1991-04-23 | Shin-Etsu Handotai Co., Ltd. | Semiconductor rod zone melting apparatus |
US5089082A (en) * | 1989-11-24 | 1992-02-18 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process and apparatus for producing silicon ingots having high oxygen content by crucible-free zone pulling, silicon ingots obtainable thereby and silicon wafers produced therefrom |
US20110073591A1 (en) * | 2008-07-17 | 2011-03-31 | Seiichi Sawatsubashi | Guide Chip Structure for High-Frequency Induction Heating Coil |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2537289A (en) * | 1944-04-26 | 1951-01-09 | Hartford Nat Bank & Trust Co | Device for heating pieces of work by means of high-frequency alternating currents |
US3100250A (en) * | 1961-04-07 | 1963-08-06 | Herczog Andrew | Zone melting apparatus |
FR1358425A (fr) * | 1963-01-22 | 1964-04-17 | Traitements Electrolytiques & | Perfectionnement au chalumeau à plasma haute fréquence |
US3232716A (en) * | 1959-12-23 | 1966-02-01 | Siemens Halske Ag | Device for pulling monocrystalline semiconductor rods |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE561650A (US07122547-20061017-C00224.png) * | 1953-09-25 | 1900-01-01 |
-
1964
- 1964-02-08 DE DES89439A patent/DE1260439B/de active Pending
- 1964-08-26 CH CH1115664A patent/CH414553A/de unknown
-
1965
- 1965-01-20 FR FR2632A patent/FR1445481A/fr not_active Expired
- 1965-02-04 US US430361A patent/US3342970A/en not_active Expired - Lifetime
- 1965-02-04 BE BE659252D patent/BE659252A/xx unknown
- 1965-02-04 GB GB4979/65A patent/GB1022427A/en not_active Expired
- 1965-02-05 SE SE1521/65A patent/SE302116B/xx unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2537289A (en) * | 1944-04-26 | 1951-01-09 | Hartford Nat Bank & Trust Co | Device for heating pieces of work by means of high-frequency alternating currents |
US3232716A (en) * | 1959-12-23 | 1966-02-01 | Siemens Halske Ag | Device for pulling monocrystalline semiconductor rods |
US3100250A (en) * | 1961-04-07 | 1963-08-06 | Herczog Andrew | Zone melting apparatus |
FR1358425A (fr) * | 1963-01-22 | 1964-04-17 | Traitements Electrolytiques & | Perfectionnement au chalumeau à plasma haute fréquence |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3660062A (en) * | 1968-02-29 | 1972-05-02 | Siemens Ag | Method for crucible-free floating zone melting a crystalline rod, especially of semi-crystalline material |
US3935059A (en) * | 1969-07-21 | 1976-01-27 | U.S. Philips Corporation | Method of producing single crystals of semiconductor material by floating-zone melting |
US4109128A (en) * | 1975-09-01 | 1978-08-22 | Wacker-Chemitronik Gesellschaft Fur Elektronik-Grundstoffe Mbh | Method for the production of semiconductor rods of large diameter and device for making the same |
US4184135A (en) * | 1978-04-10 | 1980-01-15 | Monsanto Company | Breakapart single turn RF induction apparatus |
US4458127A (en) * | 1981-05-26 | 1984-07-03 | Park-Ohio Industries, Inc. | Inductor for annealing work hardened portions of structural beams |
DE3143146A1 (de) * | 1981-10-30 | 1983-05-11 | Siemens AG, 1000 Berlin und 8000 München | Als flachspule ausgebildete induktionsheizspule zum tiegelfreien zonenschmelzen |
DE3226713A1 (de) * | 1982-07-16 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Als flachspule ausgebildete induktionsheizspule zum tiegelfreien zonenschmelzen |
DE3229461A1 (de) * | 1982-08-06 | 1984-02-09 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum tiegelfreien zonenschmelzen eines, insbesondere aus silicium bestehenden halbleiterstabes |
US4549051A (en) * | 1984-02-15 | 1985-10-22 | Ness Richard A | Induction heating device for nozzles of containers |
US5009860A (en) * | 1987-05-25 | 1991-04-23 | Shin-Etsu Handotai Co., Ltd. | Semiconductor rod zone melting apparatus |
US5089082A (en) * | 1989-11-24 | 1992-02-18 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Process and apparatus for producing silicon ingots having high oxygen content by crucible-free zone pulling, silicon ingots obtainable thereby and silicon wafers produced therefrom |
US20110073591A1 (en) * | 2008-07-17 | 2011-03-31 | Seiichi Sawatsubashi | Guide Chip Structure for High-Frequency Induction Heating Coil |
Also Published As
Publication number | Publication date |
---|---|
GB1022427A (en) | 1966-03-16 |
BE659252A (US07122547-20061017-C00224.png) | 1965-08-04 |
CH414553A (de) | 1966-06-15 |
SE302116B (US07122547-20061017-C00224.png) | 1968-07-08 |
FR1445481A (fr) | 1966-07-15 |
DE1260439B (de) | 1968-02-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3342970A (en) | Apparatus for crucible-free zone melting | |
US3096158A (en) | Apparatus for pulling single crystals in the form of long flat strips from a melt | |
US2897329A (en) | Zone melting apparatus | |
GB829422A (en) | Method and apparatus for producing semi-conductor materials of high purity | |
KR100307991B1 (ko) | 반도체단결정성장장치및결정성장방법 | |
US3074785A (en) | Apparatus for pulling crystals from molten compounds | |
US4109128A (en) | Method for the production of semiconductor rods of large diameter and device for making the same | |
US2904663A (en) | Apparatus for zone melting of semiconductor material | |
US3607138A (en) | Method and device for crucible-free floating-zone melting using a variable-diameter heating coil | |
US3658598A (en) | Method of crucible-free zone melting crystalline rods, especially of semiconductor material | |
US3271115A (en) | Apparatus for crucible-free zone melting of semiconductor material | |
US3124633A (en) | Certificate of correction | |
US3310384A (en) | Method and apparatus for cruciblefree zone melting | |
US3249406A (en) | Necked float zone processing of silicon rod | |
US4506132A (en) | Induction coil in the form of a flat coil for crucible-free floating zone melting | |
US3505032A (en) | Heater immersed zone refined melt | |
US3053918A (en) | Apparatus for crucible-free zone melting of semiconductor rods | |
US5009860A (en) | Semiconductor rod zone melting apparatus | |
US11102850B1 (en) | Device and method for levitation melting using induction units which are arranged in a tilted manner | |
US2914397A (en) | Refining processes for semiconductor materials | |
KR102217611B1 (ko) | 이동식 유도 유닛들을 이용하는 부양 용해 방법 | |
US3622280A (en) | Adjustable heating device for crucible-free zone melting a crystalline rod | |
CN112210819A (zh) | 一种晶棒的制备方法和设备 | |
US2898429A (en) | Crucible-free zone-melting apparatus | |
US3563810A (en) | Method for reducing the cross section of semiconductor rods by molten-zone stretching |