US3296036A - Apparatus and method of producing semiconductor rods by pulling the same from a melt - Google Patents

Apparatus and method of producing semiconductor rods by pulling the same from a melt Download PDF

Info

Publication number
US3296036A
US3296036A US502054A US50205465A US3296036A US 3296036 A US3296036 A US 3296036A US 502054 A US502054 A US 502054A US 50205465 A US50205465 A US 50205465A US 3296036 A US3296036 A US 3296036A
Authority
US
United States
Prior art keywords
melt
semiconductor
rod
heating
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US502054A
Other languages
English (en)
Inventor
Keller Wolfgang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Application granted granted Critical
Publication of US3296036A publication Critical patent/US3296036A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/912—Replenishing liquid precursor, other than a moving zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Definitions

  • My invention relates to apparatus and method for producing semiconductor rods by pulling the same from a melt of semiconductor material.
  • Monocrystalline semiconductor rods have been produced in the past by pulling them from a melt according to the Czochralski method and by crucible-free zone melting according to the method of Theuerer. More recently, the so-called Podest process has become known (see the article by Dash on page 363 of Growth and Perfection of Crystals, edited by Doremus, Roberts and Turnbull, pulished by John Wiley & Sons, Inc., New York, and Chapman and Hall, Ltd., London, 1958).
  • a drop-shaped melt is produced on a slotted or split semiconductor rod, for example by means of induction heating, and a monocrystal is drawn out of this melt after immersing a monocrystalline seed therein.
  • the diameter of the growing semiconductor material is controlled by regulating the temperature of the melt and the speed at which the pulling takes place or both.
  • semiconductor monocrystals of larger diameters can be produced in this manner.
  • This method has a disadvantage in that impurities, such as oxygen, can diffuse into the melt from the heated crucible Wall. With materials that melt at high temperatures, such as silicon for example, further difficulties arise due to the fact that the crucible wall becomes plastically deformable at those high temperatures. With the crucible-free zone melting method, monocrystals with a diameter of more than 25 mm. can be produced only with great difficulty, and it is almost impossible to produce monocrystals of more than 35 mm. diameter.
  • I provide an apparatus and method of producing semiconduc tor rods by pulling the same from a melt in which a rod component, i.e. a seed crystal particularly, is immersed in a melt and is enlarged as it is pulled out.
  • a substantially cylindrical semiconductor carrier element is provided, having a longitudinal axis extending in a vertical direction, and the semiconductor carrier element is rotated continuously about this axis.
  • the semiconductor body is heated from above by means of a heating device disposed at one side of the rotational axis and extending up to about the center of the body cross section, and the rod portion beyond the heated portion of the melt is pulled out of the latter.
  • the semiconductor body is heated from below by means of a heating device disposed at one side of the rotational axis thereof and extending to the center of the body cross section, and the rod portion beyond the heated portion of the melt is pulled out of the latter in a downward direction.
  • FIG. 1 is a diagrammatic cross section of, a vacuum chamber in which the method of this invention can be carried out;
  • FIG. 2 is an enlarged perspective view of the central components shown in the vacuum chamber of FIG. 1;
  • FIGS. 3 and 4 are top plan views of modifications of the components shown in FIG. 2;
  • FIG. 5 is a perspective view of an additional modification of the components shown in FIG. 2;
  • FIG. 6 is an enlarged partial front elevational view of a modification of the components shown in FIG. 2;
  • FIG. 7 is a partly sectional bottom plan view of FIG. 6 taken along the lines VIIVII in the direction of the arrows.
  • a vacuum chamber comprising a box-type housing 2 provided with a viewing glass or window 3 through which the method carried outin accordance with my invention inside the chamber can be observed.
  • a protective gas can be supplied to the housing 2 in order to carry out the method of this invention.
  • the chamber can be evacuated or supplied wtih protective gas through the connecting tube 4.
  • a thick rod 5 as well as a slender rod 6, both consisting either of silicon or germanium, are located inside the chamber, the slender rod 6 being produced or grown from and carried by the thick rod 5.
  • a melt 7 is located between the rods 5 and 6 and is formed by heating and melting the top of the rod 5 3 With an induction coil 8, but can also be formed similarly by radiation heating or electron radiation.
  • the induction coil 8 is secured to a support 9 of suitable insulating material which does not melt or vaporize at the employed temperatures.
  • the support 9 extends outwardly from the chamber 2 through a vacuum-proof or protective-gas-proof fitting 10, as the case may be, located in an opening at the bottom wall of the chamber 2.
  • the support 9 has at least one longitudinal bore through which the electrical leads to the heating coil 8 and a coolant supply and discharge means for cooling the heating coil extend.
  • the two-headed arrow 11 indicates that the heating coil 8 and the support 9 are displaceable from outside the vacuum chamber in a vertical direction as viewed in FIG. 1.
  • the thick rod is supported by a lower holder 12 that is secured at an end of a guide rod 13 which is also led to the outside through a vacuum-proof or protective-gas-proof fitting 14, as the case may be, also mounted in an opening provided in the base wall of the chamber.
  • the guide rod 13 can also be actuated from the outside for displacement in the vertical direction as viewed in FIG. 1 as well as for turning about its axis as indicated by the pertinent two-headed and curved arrows.
  • the slender rod 6 is held in a similar manner as the thick rod 5 in an upper holder 15 which is secured at the end of a shaft 16.
  • the shaft 16 also passes through a vacuumor protective-gas-proof fitting 17, as the case may be, mounted in an opening in the top Wall of the chamber and is also displaceable in a vertical direction from the outside as viewed in FIG. 1, as well as rotatable about its own axis as shown by the related arrows.
  • a vacuumor protective-gas-proof fitting 17 as the case may be, mounted in an opening in the top Wall of the chamber and is also displaceable in a vertical direction from the outside as viewed in FIG. 1, as well as rotatable about its own axis as shown by the related arrows.
  • FIG. 2 portions of the thick rod and the slender rod are shown in an enlarged view as engaging one another in a melt.
  • the slender rod portion 6 lies remote from the effects of the heating coil 8 and is therefore able to grow completely undisturbed thereby.
  • the heating coil 8 produces a heating effect on the portion of the end surface of the thicker rod 5 which lies beneath it, causing it to melt.
  • every portion of the outer end surface of the thick rod is subjected to the heating efiect of the coil 8.
  • the slender rod 6 which is located eccentrically with respect to the longitudinal axis of the thick rod 5 is not affected by the heating device.
  • the slender rod 6 is advantageously rotated about its own axis so as to ensure symmetrical crystalline growth thereof.
  • the thick rod 5 is suitably a cylindrical semiconductor body of silicon or germanium. Slight variations in the diameter of the cylindrical rod 5 are of no significance. Also slight variations in the shape of the cylinder, for example where a slight taper of the surface gives it a somewhat conical appearance, are not harmful for carrying out the method of this invention. Naturally, it is particularly advantageous when the rod is substantially a geometrically perfect cylinder.
  • FIG. 3 there is illustrated a slightly modified heating coil 8a in which one of the leads is shown as being drawn off straight from the heating loop rather than having a bend as in the embodiment of FIG. 2.
  • FIG. 4 there is shown another heating coil 8b which differs from that of FIGS. 2 and 3.
  • the induction heating coil 8b of FIG. 4 has the form of a segment of a circle. The point of the circular segment is located at the rotational axis of the cylindrical thick rod 5. Such a shape of the induction heating coil produces a fairly uniform depth penetration of the applied heat overthe entire surface of the melt 7 as the rod 5 is rotated.
  • the entire upper surface of the thick rod 5 is advantageously not heated but rather, a predetermined margin located between the arc-shaped portion of the coil 8b and the edge of the rod 5 remains unheated, which prevents dripping of the melt from the upper surface of the rod.
  • the cylindrical semiconductor body 5 can be kept relatively short in length as shown in FIG. 5.
  • the semiconductor material which is supplied to the melt is preferably in the form of another semiconductor rod and is also preferably introduced in the vicinity of the heater so that it will melt as soon as possible.
  • the additional semiconductor material in the form of the rod 18 is introduced into the melt through the circular turn of a heating coil 8c.
  • the cylindrical semiconductor body 5 in such a case is not necessarily but preferably surrounded by a graphite crucible 19.
  • the graphite crucible 19 is preheated; for example in the case where silicon is the semiconductor, the cylindrical semiconductor body and crucible are preheated to about 1200 C.
  • Other types of preheating can also be provided, for example by means of an induction heating coil which surrounds the thick rod 5 in the vicinity of the melt 7.
  • the lower end of a preferably cylindrical semiconductor body 22 is heated by a liquid cooled induction coil 24 which can have one or more windings and can also have other forms such as a segment of a circle having an acute central angle or having a crescent shape as in FIG. 7.
  • a liquid cooled induction coil 24 which can have one or more windings and can also have other forms such as a segment of a circle having an acute central angle or having a crescent shape as in FIG. 7.
  • the magnetic supporting effect exerted by the coil on the melt can be increased to such an extent in comparison to its heating effect that engage ment of the heating coil 24 by the melt 25 is prevented.
  • This can also be achieved by providing an additional coil beneath the semiconductor body which is supplied with an alternating current of for example 10 kilocycles.
  • the heating output therefrom is distributed uniformally over the entire cross section so that the melt 25 spreads out over the entire end surface of the semiconductor body.
  • the monocrystalline thin semiconductor rod 23 is drawn therefrom, its growth being uninfluenced by the heating action.
  • the direction of the arrow 27 indicates the direction in which the semiconductor rod 23 is being pulled from the melt 25.
  • the semiconductor body 22 can be preheated by the coil 26 or in any other manner so that the required heat output of the coil 24 is reduced.
  • the coils 24 and 26 are secured to a carrier (not shown) displaceable in a vertical direction as viewed in FIG.
  • the holders of the semiconductor body 22 and of the thin semiconductor rod 23 as well as the carrier for the coils 24 and 26 must extend outwardly from the vacuum vessel through suitably apertured, vacuum-tight inserts in the wall thereof similar to the inserts 10, 14, 17 of the embodiment shown in FIG. 1.
  • the consumption of the cylindrical semiconductor body 22 can be reduced by continually supplying new semiconductor material preferably in rod form to the melt.
  • the new semiconductor material is expediently supplied to the vicinity of the heating action, through the heating coil when induction heating is employed, in order to achieve a rapid melting thereof.
  • a supply of semiconductor material, in the form of a rod 30 (FIG. 7), for example, can be continuously added to the melt through the space within the coil 24.
  • Method of producing a monocrystalline semiconductor body which comprises horizontally rotating a melt of semiconductor material simultaneously with a carrier of the same material underlying and supporting the melt; applying heat at a radially extending area overlying the rotating melt so as to heat the melt as it passes beneath the area to at least the melting temperature of the material; and pulling with the aid of a crystal seed a mono crystalline semiconductor body from a portion of the melt distantly located from the applied heating area.
  • Method of producing a monocrystalline semiconductor body which comprises horizontally rotating a melt of semiconductor material simultaneously with a carrier of the same material underlying and supporting the melt; applying heat at a radially extending area overlying the rotating melt so as to heat the melt as it passes beneath the area to at least the melting temperature of the material; pulling with the aid of a crystal seed a monocrystalline semiconductor body from a portion of the melt distantly located from the applied heating area; and supplying additional semiconductor material in solid form to the melt to replenish the material pulled from the melt.
  • Method of producing a monocrystalline semiconductor rod which comprises horizontally rotating a substantially cylindrical block of semiconductor material simultaneously with a melt of the same material carried by the block; applying heat at a radially extending area overlying the rotating melt so as to heat the melt as it passes beneath the area to at least the melting temperature of the material; and pulling with the aid of a crystal seed a monocrystalline semiconductor rod from a portion of the melt distantly located from the heating area.
  • Method of producing a monocrystalline semiconductor rod which comprises horizontally rotating a substantially cylindrical block of semiconductor material simultaneously with a melt consisting of the same material which is supported by the block; applying heat at a radially extending area overlying the rotating melt so as to heat the melt as it passes beneath the area to at least the melting temperature of the material; pulling with the aid of a crystal seed a monocrystalline semiconductor rod from a portion of the melt distantly located from said heating area; and introducing semiconductor material in rod form to said melt from above the same to replace the material pulled from said melt.
  • Method of producing a monocrystalline semiconductor rod which comprises horizontally rotating a substantially cylindrical carrier of semiconductor material simultaneously with a melt consisting of the same material and supported on the carrier; applying heat at a radially extending area overlying the rotating melt so as to heat the melt as it passes beneath the area to at least the melting temperature of the material; pulling with the aid of a crystal seed a monocrystalline semiconductor rod from a portion of the melt distantly located from said heating area; and introducing semiconductor material in solid form to the melt through the heating area from above the melt so as to replace the material pulled from the melt.
  • Method of producing a monocrystalline semiconductor rod which comprises horizontally rotating a substantially cylindrical carrier of semiconductor material simultaneously with a melt consisting of the same material overlying and supported by the carrier; applying heat at a fixed area overlying the rotating melt and extending radially to a marginal area adjacent the periphery of the cylindrical carrier so as to heat all of the melt encircled by the marginal area as it passes beneath the heating area to at least the melting temperature of the material; and pulling with the aid of a crystal seed a monocrystalline semiconductor rod from a portion of the melt distantly located from said heating area.
  • Apparatus for producing a monocrystalline semiconductor body comprising a semiconductor carrier, means for rotating said semiconductor carrier about a vertical axis, means for applying heat from a position above said carrier, onto an upper face of said carrier over a fixed area extending radially outwardly from the vicinity of said vertical axis, said upper face of said carrier being rotatable through said area to form a melt of semiconductor material around said vertical axis; and means for pulling a crystal seed and consequent semiconductor growth thereon from said melt at a location distant from said heating area.
  • Apparatus according to claim 7 including means for supplying semiconductor material to said melt from above the same so as to replace the material pulled therefrom.
  • said heat applying means comprises an induction heating coil located above and spaced from said melt, said coil having the shape of a sector of a circle with its vertex directed toward said vertical axis, the area defined by said sectorshaped coil corresponding substantially to said heat-applying area.
  • Apparatus according to claim 9 including means for adjusting the spacing between said induction heating coil and said melt.
  • Method of producing a monocrystalline semiconductor body which comprises horizontally rotating a melt of semiconductor material and supporting the melt on a carrier simultaneously rotating therewith, applying heat at a radially extending area adjacent the surface of the rotating melt so as to heat the melt as it passes the applied heating area to at least the melting temperature of the material; and pulling with the aid of a crystal seed a monocrystalline semiconductor body from a portion of the melt distantly located from the applied heating area.
  • melt underlies the carrier the applied heating area underlies the melt so as to heat the melt from below and the monocrystalline semiconductor body is pulled from the melt in a downward direction.
  • Method according to claim 12 including preheating the semiconductor material in the vicinity of the melt.
  • Apparatus for producing a monocrystalline semiconductor body comprising a semiconductor carrier, mean-s for rotating said semiconductor carrier about a vertical axis, means for applying heat from a position adjacent an axial end of said carrier onto an end face of said carrier over a fixed area extending radially outwardly from the vicinity of said vertical axis, said end face of said carrier being rotatable through said area to form a melt of semiconductor material around said vertical axis; and means for pulling a crystal seed and consequent semiconductor growth thereon from said melt at a location distant from said heating area.
  • Apparatus according to claim 15 wherein the position of said heat applying means is located below said carrier for applying heat onto a lower face of said carrier.
  • Apparatus according to claim 16 including means 7 8 -for supplying semiconductor material to said melt from 1 for preheating said semiconductor carrier in the vicinity below the same so as to replace the material pulled thereof said melt.
  • Apparatusaccording to claim 15 including means N. F. MARKVA, Assistant Examiner.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
US502054A 1965-03-19 1965-10-22 Apparatus and method of producing semiconductor rods by pulling the same from a melt Expired - Lifetime US3296036A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES96046A DE1296132B (de) 1965-03-19 1965-03-19 Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze

Publications (1)

Publication Number Publication Date
US3296036A true US3296036A (en) 1967-01-03

Family

ID=7519790

Family Applications (1)

Application Number Title Priority Date Filing Date
US502054A Expired - Lifetime US3296036A (en) 1965-03-19 1965-10-22 Apparatus and method of producing semiconductor rods by pulling the same from a melt

Country Status (6)

Country Link
US (1) US3296036A (enrdf_load_stackoverflow)
BE (1) BE677920A (enrdf_load_stackoverflow)
DE (1) DE1296132B (enrdf_load_stackoverflow)
DK (1) DK120943B (enrdf_load_stackoverflow)
GB (1) GB1065187A (enrdf_load_stackoverflow)
NL (1) NL6602568A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3494745A (en) * 1967-04-06 1970-02-10 Corning Glass Works Method of growing single crystal in a horizontally disposed rod
US3501406A (en) * 1966-06-13 1970-03-17 Siemens Ag Method for producing rod-shaped silicon monocrystals with homogeneous antimony doping over the entire rod length
US3622282A (en) * 1966-12-30 1971-11-23 Siemens Ag Method for producing a monocrystalline rod by crucible-free floating zone melting
US3984280A (en) * 1973-07-06 1976-10-05 U.S. Philips Corporation Making rod-shaped single crystals by horizontal solidifaction from a melt using transversally asymmetric trough-shaped resistance heater having transverse half turns
US4133969A (en) * 1978-01-03 1979-01-09 Zumbrunnen Allen D High frequency resistance melting furnace
EP0049453A1 (en) * 1980-09-29 1982-04-14 Olin Corporation Process and apparatus for electromagnetically casting or reforming strip materials
US4784715A (en) * 1975-07-09 1988-11-15 Milton Stoll Methods and apparatus for producing coherent or monolithic elements

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3501406A (en) * 1966-06-13 1970-03-17 Siemens Ag Method for producing rod-shaped silicon monocrystals with homogeneous antimony doping over the entire rod length
US3622282A (en) * 1966-12-30 1971-11-23 Siemens Ag Method for producing a monocrystalline rod by crucible-free floating zone melting
US3494745A (en) * 1967-04-06 1970-02-10 Corning Glass Works Method of growing single crystal in a horizontally disposed rod
US3984280A (en) * 1973-07-06 1976-10-05 U.S. Philips Corporation Making rod-shaped single crystals by horizontal solidifaction from a melt using transversally asymmetric trough-shaped resistance heater having transverse half turns
US4784715A (en) * 1975-07-09 1988-11-15 Milton Stoll Methods and apparatus for producing coherent or monolithic elements
US4133969A (en) * 1978-01-03 1979-01-09 Zumbrunnen Allen D High frequency resistance melting furnace
EP0049453A1 (en) * 1980-09-29 1982-04-14 Olin Corporation Process and apparatus for electromagnetically casting or reforming strip materials
US4419177A (en) * 1980-09-29 1983-12-06 Olin Corporation Process for electromagnetically casting or reforming strip materials

Also Published As

Publication number Publication date
DE1296132B (de) 1969-05-29
NL6602568A (enrdf_load_stackoverflow) 1966-09-20
GB1065187A (en) 1967-04-12
DK120943B (da) 1971-08-09
BE677920A (enrdf_load_stackoverflow) 1966-09-16

Similar Documents

Publication Publication Date Title
US2972525A (en) Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
US3265469A (en) Crystal growing apparatus
US3798007A (en) Method and apparatus for producing large diameter monocrystals
JPH01153589A (ja) シリコン単結晶の製造装置
US4650540A (en) Methods and apparatus for producing coherent or monolithic elements
US3173765A (en) Method of making crystalline silicon semiconductor material
US3296036A (en) Apparatus and method of producing semiconductor rods by pulling the same from a melt
JPH06345584A (ja) 単結晶引上げ方法およびその装置
US3353914A (en) Method of seed-pulling beta silicon carbide crystals from a melt containing silver and the product thereof
JPH076972A (ja) シリコン単結晶の成長方法及び装置
US3351433A (en) Method of producing monocrystalline semiconductor rods
US6001170A (en) Process and apparatus for the growth of single crystals
US4303465A (en) Method of growing monocrystals of corundum from a melt
US3360405A (en) Apparatus and method of producing semiconductor rods by pulling the same from a melt
JP2709310B2 (ja) 単結晶引上げ装置
US3261722A (en) Process for preparing semiconductor ingots within a depression
US3179593A (en) Method for producing monocrystalline semiconductor material
US5063986A (en) Method for manufacturing alloy rod having giant magnetostriction
JPS6046073B2 (ja) 半導体単結晶の製造方法
US3685973A (en) Method for crucible-free zone melting using a displaced heater
US4072556A (en) Device for crucible-free floating-zone melting of a crystalline rod and method of operating the same
US3607114A (en) Apparatus for producing a monocrystalline rod, particularly of semiconductor material
US3498847A (en) Method and apparatus for producing a monocrystalline rod,particularly of semiconductor material
JP2520925B2 (ja) シリコン単結晶中の酸素濃度制御方法
US3649210A (en) Apparatus for crucible-free zone-melting of crystalline materials