US3230609A - Method of providing alloy contacts on semi-conductor bodies - Google Patents

Method of providing alloy contacts on semi-conductor bodies Download PDF

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Publication number
US3230609A
US3230609A US169819A US16981962A US3230609A US 3230609 A US3230609 A US 3230609A US 169819 A US169819 A US 169819A US 16981962 A US16981962 A US 16981962A US 3230609 A US3230609 A US 3230609A
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Prior art keywords
alloying
mass
semi
alkali metal
electrode
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Expired - Lifetime
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US169819A
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English (en)
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Kooi Else
Schmitz Albert
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US Philips Corp
North American Philips Co Inc
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US Philips Corp
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    • H10P95/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H10P95/50—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S228/00—Metal fusion bonding
    • Y10S228/903—Metal to nonmetal

Definitions

  • the invention relates to a method of providing an alloy contact on a semi-conductor body, in which an amount of an alloying material is disposed on the semi-conductor body and fused and/ or alloyed thereto at a temperature exceeding 500 C. with the use of a flux. Alloy contacts on semi-conductor bodies are used, for example, in semiconductive electrode systems, such as transistors and diodes.
  • hydrochloric acid as a flux
  • an aqueous solution of hydrochloric acid being provided separately from the alloying material and being heated in the alloying process.
  • the hydrochloric acid readily evaporates so that it has completely disappeared at a temperature of 500 C. and hence no longer acts as a flux.
  • the surface of the semi-conductor body and the alloying material may, however, be highly contaminated previously by the action of the vapour.
  • the flux contains at least one alkali metal halide and it is provided separate from the alloying material and is also heated in the fusing and/or alloying process.
  • Alkali metal halides generally are only slightly volatile at temperatures below 500 C. and gradually vaporize at temperatures above 500 C. so as to be capable of providing an even supply of a vapour of not excessive pressure promoting fusion to the alloying material and the surface of the semi-conductor body to be wetted by this material.
  • the flux may be positioned in close proximity of the alloying material, its temperature may then be substantially equal to the temperature of the alloying material or somewhat lower due to the absorption of evaporation heat.
  • the flux preferably contains an alkali metal fluoride.
  • the flux contains a sodium halide.
  • mixtures of sodium fluoride and sodium chloride for example mixtures of from 10 to 50% by weight of NaF, the remainder being NaCl, have proved highly suitable.
  • sodium bromide and sodium iodide may be used in the method, solely or mixed together or mixed with sodium chloride and/or sodium fluoride.
  • the iodide and bromide are suitable especially in cases of fluxing at temperatures above 500 C. and under 900 0., being somewhat more volatile than the chloride and fluoride.
  • potassium halogenides solely or mixed are also suitable. The same applies for rubidium and caesium halogenides, which, however, are more expensive.
  • the method according to the invention may be used in alloying contacts to many semi-conductor materials, for example germanium, it has proved particularly suited to the manufacture of alloy contacts on silicon bodies, specially in the processes of fusing or alloying at a temperature of at least 900 C. Such high temperatures are used, for example, when applying alloying materials consisting at least substantially of tin.
  • alloying materials and semi-conductors with which the method may be carried out successfully are for instance alloying materials consisting substantially of lead, with germanium, and alloying materials consisting mainly of indium, with silicon.
  • the invention is not limited to the above materials and the method may be used in many other cases, especially those in which suitable wetting of the surface of the semi-conductor body by the electrode material will occur at temperatures above 500 C.
  • FIGURE 1 shows an alloying jig containing a semiconductor body on which is arranged a pellet of the material to be alloyed thereto.
  • FIGURE 2 shows the same alloying jig as FIGURE 1 after being subjected to a heat treatment.
  • FIGURE 3 shows another jig containing a semi-conductor body on which is arranged a pellet of alloying material.
  • FIGURE 4 shows the same semi-conductor body as FIGURE 3 provided with an electrode alloyed thereto by heating.
  • Example I an alloying jig 1 is used comprising a graphite body 2 and a cover plate 3 likewise made of graphiteand provided with an aperture 4 (FIGURE 1).
  • a semi-conductor body 5 consisting of n-type silicon having a resistivity of 2 ohm-cm. is accommodated in a recess of the graphite body 2.
  • An amount of about 1 mgm. of a powder 7 consisting of a eutectic mixture of 27.5 parts by weight of sodium fluoride and 72.5 par-ts by weightof sodium chloride is arranged in a cup-shaped recess 6 in the body 2.
  • the cover plate 3 is then laid on the body 2 and subsequently a pellet 8 of aluminum is placed in the aperture 4 on the silicon body 5.
  • the filled jig is inserted in a vitreous quartz tube 9.
  • a stream of hydrogen is passed through this tube and the tube is put in a furnace, for example a tubular furnace, which is not shown.
  • the alloying jig 1 is then heated to about 750 C. during about five minutes so that the pellet 8 melts.
  • the mixture 7 then also melts and slowly vaporizes.
  • the resulting vapour acts upon the molten aluminum and upon the surface of the silicon body 5 so that this surface is satisfactorily wetted by the molten aluminum.
  • the aluminum is allowed with the subjacent silicon and the molten alloy penetrates-into the silicon body with a substantially flat front.
  • Example II A semi-conductor body 21 of n type silicon having a resistivity of 1 ohm-cm. is arranged in a recess of a graphite jig 20 (FIGURE 3).
  • a pellet 22 consisting of a tin alloy containing 0.5% by weight of aluminum is glued to the silicon body by means of an adhesive.
  • a small amount of powdered sodium fluoride 24 is arranged in a cup-shaped recess 23.
  • the filled jig is inserted into a vitreous quartz tube 25 and a stream of pure hydrogen is passed through the tube.
  • the jig 20 is now heated to 1150 C. by means of a furnace (not shown) for 3 minutes.
  • the pellet melts and the adhesive by which the pellet was made to adhere to the silicon disappears.
  • the sodium fluoride in the recess 23 gradually vaporizes and the vapour acts upon the surface of the silicon body 21 and upon the molten tin aluminum alloy of the pellet 22, any inconvenient oxide film being removed, while the molten material satisfactorily wets the surface of the silicon body.
  • the front between the melt and the solid material of the semi-conductor body gradually penetrates into the semi-conductor body, a slight amount of silicon dissolving in the melt. From the front aluminum diffuses into the solid material of the body with the formation of a gradual p-n-junction.
  • a rectifying alloy diffusion contact 26 is formed on the n-type silicon body 21 (FIGURE 4).
  • the alloy contacts produced on semi-conductor bodies by the method described in the above examples may be used in semi-conductive electrode system.
  • an ohmic contact may be provided on the n-type silicon of the body by means of a gold-antimony or gold-tin-antimony alloy to produce a diode.
  • alloy contacts may be provided on a semi-conductor body by the method according to the invention.
  • the invention is not restricted to making rectifying contacts but it also includes the provision of other alloy contacts, for example ohmic contacts, on semi-conductor bodies.
  • a method of making a semi-conductor device by alloying comprising the steps of providing a semi-conductive body and a mass of alloying electrode material, providing in the vicinity of the electrode mass and semiconductive body but separate therefrom a suply of a flux containing at least an alkali metal halide, heating the semiconductive body and electrode mass at a temperature exceeding 500 C. to melt the mass and contacting the semiconductive body with the melted mass while simultaneously heating the flux supply to vaporize the alkali metal halide and provide vapors thereof at the contacted mass and body to promote melting and fusion and allowing thereof, said alkali metal halide being substantially involatile at temperatures below 500 C. and remaining stable at the elevated temperature at which alloying occurs, and cooling the assembly to form an electrode mass alloyed to the semiconductive body.
  • a method of making a silicon semi-conductor device by alloying comprising the steps of providing a silicon semiconductive body and an aluminum-containing mass of alloying electrode material, providing in the vicinity of the electrode mass and silicon body but entirely separate therefrom a supply of a flux containing at least an alkali metal halide, heating the semiconductive body and electrode mass at a temperature exceeding 500 C. to melt the mass and contacting the semiconductive body with the melted mass while simultaneously heating the flux at substantially the same temperature to vaporize the alkali metal halide and provide solely vapors thereof at the contacted mass and body to promote melting and fusion and alloying thereof, said alkali metal halide being substantially involatile at temperatures below 500 C. and remaining stable at the elevated temperature at which alloying occurs, and cooling the assembly to form an electrode mass alloyed to the semiconductive body.
  • a method of making a silicon semi-conductor device by alloying comprising the steps of providing a silicon semiconductive body and a mass of alloying electrode material, providing in the vicinity of the electrode mass and silicon body but separate therefrom a flux containing at least an alkali metal halide, heating the semiconductive body and electrode mass at a temperature exceeding 900 C. to melt the mass and contacting the semiconductive body with the melted mass while heating the flux to vaporize the alkali metal halide and provide solely vapors thereof at the contacted mass and body to promote melting and fusion and alloying thereof, said alkali metal halide being substantially involatile at temperatures below 500 C. and remaining stable at the elevated temperature at which alloying occurs, and cooling the assembly to form an electrode mass alloyed to the semiconductive body.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
US169819A 1961-02-03 1962-01-30 Method of providing alloy contacts on semi-conductor bodies Expired - Lifetime US3230609A (en)

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NL260812 1961-02-03

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DE (1) DE1154576B (OSRAM)
GB (1) GB984141A (OSRAM)
NL (1) NL260812A (OSRAM)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4183126A (en) * 1976-09-09 1980-01-15 Kabushiki Kaisha Seikosha Process for preparing quartz oscillator
US4298154A (en) * 1980-01-14 1981-11-03 B. B. Greenberg Company Automatic soldering machine
US7118942B1 (en) 2000-09-27 2006-10-10 Li Chou H Method of making atomic integrated circuit device
US20070181913A1 (en) * 1995-06-07 2007-08-09 Li Chou H Integrated Circuit Device
US20100276733A1 (en) * 2000-09-27 2010-11-04 Li Choa H Solid-state circuit device

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2299166A (en) * 1940-07-30 1942-10-20 Aluminum Co Of America Brazing light metals
US2561565A (en) * 1946-06-22 1951-07-24 United Aircraft Corp Process of fluxing and joining metal parts
US2674790A (en) * 1950-04-15 1954-04-13 United Aircraft Corp Method of soldering aluminous metal parts by treating with chloride fluxes
US2800711A (en) * 1954-08-18 1957-07-30 Wall Colmonoy Corp Brazing method
US2877147A (en) * 1953-10-26 1959-03-10 Bell Telephone Labor Inc Alloyed semiconductor contacts
US2996800A (en) * 1956-11-28 1961-08-22 Texas Instruments Inc Method of making ohmic connections to silicon semiconductors
US3002864A (en) * 1958-09-05 1961-10-03 Philips Corp Method of manufacturing semi-conductor devices
US3015591A (en) * 1958-07-18 1962-01-02 Itt Semi-conductor rectifiers and method of manufacture
US3043726A (en) * 1958-01-14 1962-07-10 Philips Corp Method of producing semi-conductor electrode systems

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1033334B (de) 1954-11-10 1958-07-03 Siemens Ag Verfahren zur Herstellung von Gleichrichtern, Transistoren u. dgl. mit Metallkontakten nach dem Legierungs- bzw. Diffusions-Verfahren
DE1041164B (de) 1955-07-11 1958-10-16 Licentia Gmbh Verfahren zur Herstellung von elektrisch unsymmetrisch leitenden Systemen mit einem Halbleiterkristall
NL220082A (OSRAM) 1956-08-31

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2299166A (en) * 1940-07-30 1942-10-20 Aluminum Co Of America Brazing light metals
US2561565A (en) * 1946-06-22 1951-07-24 United Aircraft Corp Process of fluxing and joining metal parts
US2674790A (en) * 1950-04-15 1954-04-13 United Aircraft Corp Method of soldering aluminous metal parts by treating with chloride fluxes
US2877147A (en) * 1953-10-26 1959-03-10 Bell Telephone Labor Inc Alloyed semiconductor contacts
US2800711A (en) * 1954-08-18 1957-07-30 Wall Colmonoy Corp Brazing method
US2996800A (en) * 1956-11-28 1961-08-22 Texas Instruments Inc Method of making ohmic connections to silicon semiconductors
US3043726A (en) * 1958-01-14 1962-07-10 Philips Corp Method of producing semi-conductor electrode systems
US3015591A (en) * 1958-07-18 1962-01-02 Itt Semi-conductor rectifiers and method of manufacture
US3002864A (en) * 1958-09-05 1961-10-03 Philips Corp Method of manufacturing semi-conductor devices

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4183126A (en) * 1976-09-09 1980-01-15 Kabushiki Kaisha Seikosha Process for preparing quartz oscillator
US4298154A (en) * 1980-01-14 1981-11-03 B. B. Greenberg Company Automatic soldering machine
US20070181913A1 (en) * 1995-06-07 2007-08-09 Li Chou H Integrated Circuit Device
US7118942B1 (en) 2000-09-27 2006-10-10 Li Chou H Method of making atomic integrated circuit device
US20100276733A1 (en) * 2000-09-27 2010-11-04 Li Choa H Solid-state circuit device

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Publication number Publication date
DE1154576B (de) 1963-09-19
NL260812A (OSRAM)
GB984141A (en) 1965-02-24

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