US3226203A - Apparatus for preparing semiconductor rods - Google Patents

Apparatus for preparing semiconductor rods Download PDF

Info

Publication number
US3226203A
US3226203A US328636A US32863663A US3226203A US 3226203 A US3226203 A US 3226203A US 328636 A US328636 A US 328636A US 32863663 A US32863663 A US 32863663A US 3226203 A US3226203 A US 3226203A
Authority
US
United States
Prior art keywords
rod
vessel
guide
crystal
sealing device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US328636A
Other languages
English (en)
Inventor
Rummel Theodor
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Application granted granted Critical
Publication of US3226203A publication Critical patent/US3226203A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1028—Crucibleless apparatus having means providing movement of discrete droplets or solid particles to thin-film precursor [e.g., Verneuil method]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/106—Seed pulling including sealing means details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

Definitions

  • My invention relates to the production of semiconductor rods, and particularly to an apparatus wherein molten semiconductor material, or the semiconductor material which may be separated at high temperatures from a reaction gas, is crystallized in a desired growth direction onto a seed so as to form a semiconductor rod, and is then drawn out of the high temperature range.
  • a usual method of preparing semiconductor monocrystals consists of drawing a rod out of a semiconductor melt with a seed crystal, preferably a monocrystal of the same semiconductor material.
  • the melt may be held in a crucible or supported between two vertically aligned rods, as in crucible-free zone melting, wherein one rod is progressively melted while the other serves as a seed crystal.
  • Another process consists of holding the melt in the shape of a freely adhering drop on the lower end of a seed crystal and supplying it with new semiconductor material from a reaction gas which is blown against the hot melt, and which upon contact releases its semiconductor constituent. This can also be accomplished with powdered semiconductor material blown against the melt.
  • Still other processes comprise crystallizing a molten drop on a seed crystal by an electrical gas discharge produced between the seed crystal and a counter electrode.
  • Other methods include crucible-free zone melting, especially drawing thin semiconductor rods according to the state of the art.
  • An object of my invention is to provide a semiconductor crystallizing apparatus having improved rod withdrawal means.
  • a semiconductor rod within a process vessel surrounding the formation location thereof is slidably held for guidance in one direction, and is withdrawable by a device operating on the rod outside of the vessel from its point of origin within the vessel through a cooled sluice or sealing device provided in the vessel wall having several annular elastic sealing members in contact with the rod.
  • the device operating on the rod constitutes rollers.
  • the sluice or sealing device through which the rod is guided out of the process vessel is comprised of at least two gas tight or vacuum tight chambers closed to each other as well as to the vessel atmosphere and the outside atmosphere by means of at least one annular sealing member and the semiconductor rod guided out through the sealing member.
  • a quartz processing or reaction vessel 1 encloses a crucible 2 which a high-frequency coil 3 Patented Dec. 28, 1965 heats inductively, and which holds a silicon, germanium or other semiconductor melt 4.
  • Drawn from the melt 4 is a rod 5 which is held in the vicinity of the melt by a guide 6, and driven by a pair of rollers 7 located outside of the process vessel 1 and rotated by a rotor not shown.
  • the guide 6 is located immediately in the vicinity of the melt 4, but sufiiciently far from the melt so as not to be adversely affected thereby. This is a distance of approximately 2 cm. from the border between the solid and liquid phases.
  • the distance is shortened to several millimeters by using special materials for the parts of guide 6 contacting the rod 5.
  • Such materials for guide 6, which can be shaped as glide or roller drives, are quartz, silicon carbide or high melting-point metals (Mo, W, Ta) coated with quartz or silicon carbide of the best available purity.
  • Two roller pairs 8 and 8', turned from the rollers 7, have functions and shapes to be described.
  • the semiconductor rod 5 is guided outwardly from the vessel 1 through a sluice 9.
  • the latter possesses three chambers 90, 9b, 9c which are sealed by four flat, annular, ring sealers 10a, 10b, 10c and 10d as well as by the rod 5 passing through the inner openings of the sealers.
  • the ring sealers 10a, 10b, 10c, 10d consist preferably of an elastic material such as rubber, caoutchouc (hard rubber) or silicone rubber having their peripheries tightly locked to the walls of vessel 1 or with intermediate members sealed to the housing. Their centers are stamped out, so as to form center openings of smaller diameters than the rod 5. If a rod diameter change is expected, then center opening size of the sealer rings is less than the smallest expected diameter. Testing of the illustrated apparatus reveals that a sealing ring inner diameter, 5 to 10% less than the diameter of the rod to be passed therethrough, achieves a satisfactory seal. As shown the center openings of rings 10a to 10d are equal to each other and coaxial to permit easy guidance of the rod 5 through the sluice.
  • a seed crystal which is long enough to reach from the melt 4 through the drive rollers 7 to the drive rollers 8 and S, is inserted through the sluice to start the process. Its size is thus sufiicient to lock the process vessel 1 from the ambient space and at the same time to assure the necessary drive.
  • Both the inner chambers 9a and 9b are then evacuated or rinsed with a stream of inert protecting gas or hydrogen.
  • the upper chamber 90 is filled with fluid cooling means, quiet or circulating, such as water or oil. Supplementary cooling means may also be provided. Cooling means and material for the sealing rings must of course be compatible to prevent deterioration or diverse effects. During operation of the drives the coolant intensity is set to minimize reaction between the chamber sealers 10a to 10:1 and the hot rod 5, or the hot reaction gas at the inside of the process vessel.
  • the seed is then brought into contact with the melt in the usual manner for forming a monocrystal and withdrawn by the lower drive 7.
  • the latter is adjusted to the desired drawing speed.
  • the upper drive 8' is adjusted to a somewhat faster drawing speed. However, the upper drive 8' is rotated through a slide coupling 12 and due to the lower drive 7 is slowed in its operation.
  • the rod is then separated between both drives by intermittently operating electrical or pyrolytic severing means 11 such as a high-frequency coil, electric are or automatic welding burner which melt through the rod at a location between members 7 and 8. The separation occurs during withdrawal of the rod as it is formed, at intervals determined by the desired rod lengths.
  • the upper drive system 8 then takes over the transport of the separated part of the semiconductor rod to a magazine in which the cut off portion is stacked by means of intermediate glide planes.
  • Apparatus for producing semiconductor rods by causing molten semiconductor material to grow in preferred crystalline orientation on a seed at a locality of high temperature and removing the resulting solidified rod to a locality of lower temperature comprising a processing vessel, heatable crystal-forming means in said vessel, a guide mounted in said vessel in spaced relation to said crystal-forming means and engageable with the solidified crystal rod being produced to guide the rod for displacement in the axial direction away from said crystal-forming means, a sealing device mounted on the vessel wall in coaxial alignment with said guide and spaced therefrom in said direction, said sealing device having cooling means and a plurality of axially spaced elastic sealing members coaxially surrounding the rod-displacement axis, said sealing members being sealingly contactable with the rod passing through said device to the outside of said vessel, and rod drive means mounted outside said vessel and drivingly engageable with the rod for pulling the longitudinally growing crystal rod through said guide and said sealing device.
  • Apparatus for producing semiconductor rods by causing molten semiconductor material to grow in preferred crystalline orientation on a seed comprising a processing vessel, heatable crystal-forming means in said vessel, a guide mounted in said vessel above said crystalforming means and engageable with the solidfiied crystal rod being produced to guide the rod for displacement upwardly, a sealing device mounted on the vessel wall in coaxial alignment with said guide and spaced upwardly therefrom, said sealing device having cooling means and a plurality of axially spaced elastic sealing members coaxially surrounding the rod-displacement axis, said sealing members being sealingly contactable with the rod passing through said device to the outside of said vessel, and rod drive means mounted above said vessel and drivingly engageable with the rod for pulling the longitudinally growing crystal rod through said guide and said sealing device.
  • Apparatus for producing semiconductor rods by causing molten semiconductor material to grow in a preferred crystalline orientation on a seed at a locality of high temperature and removing the resulting solidified rod to a locality of lower temperature comprising a processing vessel, heatable crystal-forming means in said vessel,
  • a guide mounted in said vessel in spaced relation to said crystal-forming means and engageable with the solidified crystal rod being produced to guide the rod for displacement in the axial direction away from said crystal-forming means
  • a sealing device mounted on the vessel wall in co-axial alignment with said guide and spaced therefrom in said direction, said sealing device having cooling means and a plurality of axially spaced elastic sealing members coaxially surrounding the rod-displacement axis, said sealing members being sealing contactable with the rod passing through said device to the outside of said vessel, and rod drive means mounted outside said vessel and drivingly engageable with the rod for pulling the longitudinally growing crystal rod through said guide and said sealing device, said drive means including a pair of rollers engaging the rod.
  • Apparatus for producing semiconductor rods by causing molten semiconductor material to grow in preferred crystalling orientation on a seed at a locality of high temperature and removing the resulting solidified rod to a locality of lower temperature comprising a processing vessel, heatable crystal-forming means in said vessel, a guide mounted in said vessel in spaced relation to said crystal-forming means and engageable with the solidified crystallized rod being produced at a distance of at most 2 cm.
  • a sealing device mounted on the vessel wall in coaxial alignment with said guide and spaced therefrom in said direction, said sealing device having cooling means and a plurality of axially spaced elastic sealing members coaxially surrounding the rod-displacement axis, said sealing members being sealingly contactable with the rod passing through said device to the outside of said vessel, and rod drive means mounted outside said vessel and drivingly engageable with the rod for pulling the longitudinally growing crystal rod through said guide and said sealing device.
  • Apparatus for producing semiconductor rods by causing molten semiconductor material to grow in preferred crystalline orientation on a seed at a locality of high temperature and removing the resulting solidified rod to a locality of lower temperature comprising a processing vessel, heatable crystal-forming means in said vessel, a guide mounted in said vessel in spaced relation to said crystal-forming means and engageable with the solidified crystal rod being produced to guide the rod for displacement in the axial direction away from said crystalforming means, a sealing device mounted on the vessel wall in coaxial alignment with said guide and spaced therefrom in said direction, said sealing device having cooling means and a plurality of axially spaced elastic sealing members coaxially surrounding the rod-displacement axis, said sealing members being sealingly contactable with the rod passing through said device to the outside of said vessel, and rod drive means mounted outside said vessel and drivingly engageable with the rod for pulling the longitudinally growing crystal rod through said guide and said sealing device, said drive means including a pair of rollers engaging the rod, said sealing members dividing said sealing device into chamber
  • Apparatus for producing semiconductor rods by causing molten semiconductor material to grow in preferred crystalline orientation on a seed at a locality of high temperature and removing the resulting solidified rod to a locality of lower temperature comprising a processing vessel, heatable crystal-forming means in said vessel, a guide mounted in said vessel in spaced relation to said crystal-forming means and engageable with the solidified crystal rod being produced to guide the rod for displacement in the axial direction away from said crystal-forming means, a sealing device mounted on the vessel wall in coaxial alignment with said guide and spaced therefrom in said direction, said sealing device having cooling means and a plurality of axially spaced elastic sealing members coaxially surrounding the roddisplacement axis, said sealing members being sealingly contactable with the rod passing through said device to the outside of said vessel, and rod drive means mounted outside said vessel and drivingly engageable with the rod for pulling the longitudinally growing crystal rod through said guide and said sealing device, said drive means including a pair of rollers engaging the rod, said sealing members dividing said sealing device into chamber
  • Apparatus for producing semiconductor rods by causing molten semiconductor material to grow in preferred crystalline orientation on a seed at a locality of high temperature and removing the resulting solidified rod to a locality of lower temperature comprising a processing vessel, heatable crystal-forming means in said vessel, a guide mounted in said vessel in spaced relation to said crystal-forming means and engageable with the solidified crystal rod being produced to guide the rod for displacement in the axial direction away from said crystalforming means, a sealing device mounted on the vessel wall in coaxial alignment with said guide and spaced therefrom in said direction, said sealing device having cooling means and a plurality of axially spaced elastic sealing members coaxially surrounding the rod-displacement axis, said sealing members being sealingly contactable with the rod passing through said device to the outside of said vessel, and rod drive means mounted outside said vessel and drivingly engageable with the rod for pulling the longitudinally growing crystal rod through said guide and said sealing device, said drive means including a pair of rollers engaging the rod, said sealing members dividing said sealing
  • Apparatus for producing semiconductor rods by causing molten semiconductor material to grow in preferred crystalline orientation on a seed at a locality of high temperature and removing the resulting solidified rod to a locality of lower temperature comprising a processing vessel, heatable crystal-forming means in said vessel, a guide mounted in said vessel in spaced relation to said crystal-forming means and engageable with the solidified crystal rod being produced to guide the rod for displacement in the axial direction away from said crystalforming means, a sealing device mounted on the vessel wall in coaxial alignment with said guide and spaced therefrom in said direction, said sealing device having cooling means and a plurality of axially spaced elastic sealing members coaxially surrounding the rod-displacement axis, said sealing members being sealingly contactable with the rod passing through said device to the outside of said vessel, and rod drive means mounted outside said vessel and drivingly engageable with the rod for pulling the longitudinally growing crystal rod through said guide and said sealing device, said drive means including a pair of rollers engaging the rod, said sealing members dividing said sealing device into chamber
  • Apparatus for producing semiconductor rods by causing molten semiconductor material to grow in preferred crystalline orientation on a seed at a locality of high temperature and removing the resulting solidified rod to a locality of lower temperature comprising a processing vessel, heatable crystal-forming means in said vessel, a guide mounted in said vessel in spaced relation to said crystal-forming means and engageable with the solidified crystal rod being produced to guide the rod for displacement in the axial direction away from said crystalforming means, a sealing device mounted on the vessel wall in coaxial alignment with said guide and spaced therefrom in said direction, said sealing device having cooling means and a plurality of axially spaced elastic sealing members coaxially surrounding the rod-displacement axis, said sealing members being sealingly contactable with the rod passing through said device to the outside of said vessel, and rod drive means mounted outside said vessel and drivingly engageable with the rod for pulling the longitudinally growing crystal rod through said guide and said sealing device, said drive means including two rotary drive sections axially displaced along the rod, the section closer to the vessel
  • Apparatus for producing semiconductor rods by causing molten semiconductor material to grow in preferred crystalline orientation on a seed at a locality of high temperature and removing the resulting solidified rod to a locality of lower temperature comprising a processing vessel, heatable crystal-forming means in said vessel, a guide mounted in said vessel in spaced relation to said crystal-forming means and engageable with the solidified crystal rod being produced to guide the rod for displacement in the axial direction away from said crystalforming means, a sealing device mounted on the vessel wall in coaxial alignment with said guide and spaced therefrom in said direction, said sealing device having cooling means and a plurality of axially spaced elastic sealing members coaxially surrounding the rod-displacement axis, said sealing members being sealingly contactable with the rod passing through said device to the outside of said vessel, and rod drive means mounted outside said vessel and drivingly engageable with the rod for pulling the longitudinally growing crystal rod through said guide and said sealing device, said drive means including two rotary drive sections axially displaced along the rod, the section closer to the vessel
  • Apparatus for producing semiconductor rods by causing molten semiconductor material to grow in preferred crystalline orientation on a seed at a locality of high temperature and removing the resulting solidified rod to a locality of lower temperature comprising a processing vessel, heatable crystal-forming means in said vessel, a guide mounted in said vessel in spaced relation to said crystal-forming means and engageable with the solidified crystal rod being produced to guide the rod for displacement in the axial direction away from said crystalforming means, a sealing device mounted on the vessel wall in coaxial alignment with said guide and spaced therefrom in said direction, said sealing device having cooling means and a plurality of axially spaced elastic sealing members coaxially surrounding the rod-displacement axis, said sealing members being sealingly contactable with the rod passing through said device to the outside of said vessel, and rod drive means mounted outside said vessel and drivingly engageable with the rod for pulling the longitudinally growing crystal rod through said guide and said sealing device, said drive means including two rotary drive sections axially displaced along the rod, the section closer to the vessel
  • Apparatus for producing semiconductor rods by causing molten semiconductor material to grow in preferred crystalline orientation on a seed at a locality of high temperature and removing the resulting solidified rod to a locality of lower temperature comprising a processing vessel, heatable crystal-forming means in said vessel, a guide mounted in said vessel in spaced relation to said crystal-forming means and engageable with the solidified crystal rod being produced to guide the rod for displacement in the axial direction away from said crystalforming means, a sealing device mounted on the vessel wall in coaxial alignment with said guide and spaced therefrom in said direction, said sealing device having cooling means and a plurality of axially spaced elastic sealing members coaxially surrounding the rod-displacement axis, said sealing members being sealingly contactable with the rod passing through said device to the outside of said vessel, and rod drive means mounted outside said vessel and drivingly engageable with the rod for pulling the longitudinally growing crystal rod through said guide and said sealing device, said sealing members including sealing discs having interior openings whose diameters are smaller than the diameters of the rod
  • Apparatus for producing semiconductor rods by causing molten semiconductor material to grow in preferred crystalline orientation on a seed at a locality of high temperature and removing the resulting solidified rod to a locality of lower temperature comprising a processing vessel, heatable crystal-forming means in said vessel, a guide mounted in said vessel in spaced relation to said crystal-forming means and engageable with the solidified crystal rod being produced to guide the rod for displacement in the axial direction away from said crystalforming means, a sealing device mounted on the vessel wall in coaxial alignment with said guide and spaced therefrom in said direction, said sealing device having cooling means and a plurality of axially spaced elastic sealing members coaxially surrounding the rod-displacement axis, said sealing members being sealingly contactable with the rod passing through said device to the outside of said vessel, and rod drive means mounted outside said vessel and drivingly engageable with the rod for pulling the longitudinally growing crystal rod through said guide and said sealing device, said sealing members including silicone rubber sealing discs having interior openings whose diameters are smaller than the diameter of the
  • Apparatus for producing semiconductor rods by causing molten semiconductor material to grow in a preferred crystalline orientation on a seed at a locality of high temperature and removing the resulting solidified rod to a locality of lower temperature comprising a processing vessel, heatable crystal-forming means in said vessel, a guide mounted in said vessel in spaced relation to said crystal-forming means and engageable with the solidified crystal rod being produced to guide the rod for displacement in the axial direction away from said crystalforming means, a sealing device mounted on the vessel wall in coaxial alignment with said guide and spaced therefrom in said direction, said sealing device having cooling means and a plurality of axially spaced elastic sealing members coaxially surrounding the rod-displacement axis, said sealing members being sealingly contactable with the rod passing through said device to the outside of said vessel, and rod drive means mounted outside said vessel and drivingly engageable with the rod for pulling the longitudinally growing crystal rod through said guide and said sealing device, said sealing members including caoutchouc sealing discs having interior openings whose diameters are smaller than
  • Apparatus for producing semiconductor rods by causing molten semiconductor material to grow in preferred crystalline orientation on a seed at a locality of high temperature and removing the resulting solidified rod to a locality of lower temperature comprising a processing vessel, heatable crystal-forming means in said vessel, a guide mounted in said vessel in spaced relation to said crystal-forming means and engageable with the solidified crystal rod being produced to guide the rod for displacement in the axial direction away from said crystalforming means, a sealing device mounted on the vessel Wall in coaxial alignment with said guide and spaced therefrom in said direction, said sealing device having cooling means and a plurality of axially space-d elastic sealing members coaxially surrounding the rod-displacement axis, said sealing members being sealingly contactable with the rod passing through said device to the outside of said vessel, and rod drive means mounted outside said vessel and drivingly engageable with the rod for pulling the longitudinally growing crystal rod through said guide and said sealing device, said sealing members including rubber sealing discs having interior openings whose diameters are smaller than the diameters of

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
US328636A 1962-12-10 1963-12-06 Apparatus for preparing semiconductor rods Expired - Lifetime US3226203A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0082779 1962-12-10

Publications (1)

Publication Number Publication Date
US3226203A true US3226203A (en) 1965-12-28

Family

ID=7510595

Family Applications (1)

Application Number Title Priority Date Filing Date
US328636A Expired - Lifetime US3226203A (en) 1962-12-10 1963-12-06 Apparatus for preparing semiconductor rods

Country Status (4)

Country Link
US (1) US3226203A (enrdf_load_stackoverflow)
CH (1) CH407962A (enrdf_load_stackoverflow)
GB (1) GB990320A (enrdf_load_stackoverflow)
NL (1) NL301284A (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3349578A (en) * 1965-08-24 1967-10-31 Burlington Industries Inc Sealing device
US3410672A (en) * 1963-01-12 1968-11-12 Saint Gobain Glass working apparatus with liquid seal
US3494742A (en) * 1968-12-23 1970-02-10 Western Electric Co Apparatus for float zone melting fusible material
US3798007A (en) * 1969-12-05 1974-03-19 Ibm Method and apparatus for producing large diameter monocrystals
US3833342A (en) * 1971-04-21 1974-09-03 Nat Res Dev Apparatus for the preparation and growth of crystalline material
US3844724A (en) * 1971-12-27 1974-10-29 Du Pont Zone-melting apparatus
US4140570A (en) * 1973-11-19 1979-02-20 Texas Instruments Incorporated Method of growing single crystal silicon by the Czochralski method which eliminates the need for post growth annealing for resistivity stabilization
US4267153A (en) * 1979-08-09 1981-05-12 Mobil Tyco Solar Energy Corporation Gravity dampened guidance system
US4309167A (en) * 1979-05-16 1982-01-05 Datwyler Ag Method and apparatus for introducing a cable into a vulcanization chamber
US4650540A (en) * 1975-07-09 1987-03-17 Milton Stoll Methods and apparatus for producing coherent or monolithic elements
US20020129760A1 (en) * 2001-03-14 2002-09-19 Kenji Terao Method of and apparatus for pulling up crystal

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1514517A (en) * 1922-08-07 1924-11-04 Jay G Hamilton Tablet holder or directory
US2711833A (en) * 1952-07-09 1955-06-28 Gulf Research Development Co Extractor for particulate material
US2876147A (en) * 1953-02-14 1959-03-03 Siemens Ag Method of and apparatus for producing semiconductor material
US2963001A (en) * 1957-09-16 1960-12-06 Continental Can Co Chamber sealing apparatus for web materials
US3032890A (en) * 1958-03-28 1962-05-08 Continental Can Co Sealing structures for treating chambers
US3036392A (en) * 1960-07-19 1962-05-29 Marvin Landplane Company Telescoping land leveler
US3060065A (en) * 1959-08-06 1962-10-23 Theodore H Orem Method for the growth of preferentially oriented single crystals of metals

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1514517A (en) * 1922-08-07 1924-11-04 Jay G Hamilton Tablet holder or directory
US2711833A (en) * 1952-07-09 1955-06-28 Gulf Research Development Co Extractor for particulate material
US2876147A (en) * 1953-02-14 1959-03-03 Siemens Ag Method of and apparatus for producing semiconductor material
US2963001A (en) * 1957-09-16 1960-12-06 Continental Can Co Chamber sealing apparatus for web materials
US3032890A (en) * 1958-03-28 1962-05-08 Continental Can Co Sealing structures for treating chambers
US3060065A (en) * 1959-08-06 1962-10-23 Theodore H Orem Method for the growth of preferentially oriented single crystals of metals
US3036392A (en) * 1960-07-19 1962-05-29 Marvin Landplane Company Telescoping land leveler

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3410672A (en) * 1963-01-12 1968-11-12 Saint Gobain Glass working apparatus with liquid seal
US3349578A (en) * 1965-08-24 1967-10-31 Burlington Industries Inc Sealing device
US3494742A (en) * 1968-12-23 1970-02-10 Western Electric Co Apparatus for float zone melting fusible material
US3798007A (en) * 1969-12-05 1974-03-19 Ibm Method and apparatus for producing large diameter monocrystals
US3833342A (en) * 1971-04-21 1974-09-03 Nat Res Dev Apparatus for the preparation and growth of crystalline material
US3844724A (en) * 1971-12-27 1974-10-29 Du Pont Zone-melting apparatus
US4140570A (en) * 1973-11-19 1979-02-20 Texas Instruments Incorporated Method of growing single crystal silicon by the Czochralski method which eliminates the need for post growth annealing for resistivity stabilization
US4650540A (en) * 1975-07-09 1987-03-17 Milton Stoll Methods and apparatus for producing coherent or monolithic elements
US4309167A (en) * 1979-05-16 1982-01-05 Datwyler Ag Method and apparatus for introducing a cable into a vulcanization chamber
US4267153A (en) * 1979-08-09 1981-05-12 Mobil Tyco Solar Energy Corporation Gravity dampened guidance system
US20020129760A1 (en) * 2001-03-14 2002-09-19 Kenji Terao Method of and apparatus for pulling up crystal

Also Published As

Publication number Publication date
NL301284A (enrdf_load_stackoverflow)
GB990320A (en) 1965-04-28
CH407962A (de) 1966-02-28

Similar Documents

Publication Publication Date Title
US2872299A (en) Preparation of reactive materials in a molten non-reactive lined crucible
US3998686A (en) Sapphire growth from the melt using porous alumina raw batch material
US3226203A (en) Apparatus for preparing semiconductor rods
US4650540A (en) Methods and apparatus for producing coherent or monolithic elements
US3173765A (en) Method of making crystalline silicon semiconductor material
US3353914A (en) Method of seed-pulling beta silicon carbide crystals from a melt containing silver and the product thereof
US3507625A (en) Apparatus for producing binary crystalline compounds
GB2127709A (en) Manufacture of aluminium nitride
US2904663A (en) Apparatus for zone melting of semiconductor material
CN110484965B (zh) 一种氧化镓晶体及其生长方法和生长装置
US3481711A (en) Crystal growth apparatus
US2985519A (en) Production of silicon
US3351433A (en) Method of producing monocrystalline semiconductor rods
US3226270A (en) Method of crucible-free production of gallium arsenide rods from alkyl galliums and arsenic compounds at low temperatures
US2964396A (en) Producing semiconductor substances of highest purity
US4251315A (en) Method of growing metal halide and chalcogenide crystals for use as infrared windows
US4764350A (en) Method and apparatus for synthesizing a single crystal of indium phosphide
US4784715A (en) Methods and apparatus for producing coherent or monolithic elements
US3036898A (en) Semiconductor zone refining and crystal growth
US3159459A (en) Method for producing semiconductor crystals
EP0104741B1 (en) Process for growing crystalline material
GB870408A (en) Treatment of silicon
US3261722A (en) Process for preparing semiconductor ingots within a depression
GB1353917A (en) Method and apparatus for forming crystalline bodies of a semicon ductor material
US3242015A (en) Apparatus and method for producing single crystal structures