US3221199A - Conducting plug target and method of making the same - Google Patents

Conducting plug target and method of making the same Download PDF

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Publication number
US3221199A
US3221199A US134962A US13496261A US3221199A US 3221199 A US3221199 A US 3221199A US 134962 A US134962 A US 134962A US 13496261 A US13496261 A US 13496261A US 3221199 A US3221199 A US 3221199A
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US
United States
Prior art keywords
film
target
conductors
metal
chemically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US134962A
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English (en)
Inventor
Samuel T Yanagisawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Machlett Laboratories Inc
Original Assignee
Machlett Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL281909D priority Critical patent/NL281909A/xx
Application filed by Machlett Laboratories Inc filed Critical Machlett Laboratories Inc
Priority to US134962A priority patent/US3221199A/en
Priority to GB9399/62A priority patent/GB1005249A/en
Priority to FR893328A priority patent/FR1319120A/fr
Priority to BE616203A priority patent/BE616203A/fr
Priority to CH478962A priority patent/CH425886A/fr
Application granted granted Critical
Publication of US3221199A publication Critical patent/US3221199A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/41—Charge-storage screens using secondary emission, e.g. for supericonoscope
    • H01J29/413—Charge-storage screens using secondary emission, e.g. for supericonoscope for writing and reading of charge pattern on opposite sides of the target, e.g. for superorthicon
    • H01J29/416—Charge-storage screens using secondary emission, e.g. for supericonoscope for writing and reading of charge pattern on opposite sides of the target, e.g. for superorthicon with a matrix of electrical conductors traversing the target

Definitions

  • This invention relates to conducting plug targets and more specifically to a target structure having particular applicability to television pickup electron discharge devices and a method of making the target structure.
  • an image orthicon is a camera tube in which an electrical image is produced by a photo-emitting surface and focused on a separate storage target, which target is scanned on its opposite side by a low velocity electron beam.
  • the front side of the image orthicon tube is a transparent plate upon which an optical image is focused.
  • On the inside of the front plate there is usually a photocathode that releases electrons in direct proportion to the brightness of the image projected thereon.
  • These photoelectrons are accelerated and focused on the target so as to create a charge pattern on the target that is also in direct proportion to the brightness of the image.
  • the prior art targets capacitively couple the image charge to the other side of the target. It therefore requires that the target material have a low lateral resistivity to prevent leakage of the image charge across the face and must also be thin enough to provide good coupling of the image charge to the scanning side of the target.
  • Support member 10 has a strippable lacquer base substrate 12 mounted thereon.
  • the surface of base 10 action in that they are not capable of being oxidized or fluoridized.
  • Deposited over the dots 20 and the substrate 12 is a continuous fihn generally designated as 13 and composed of sections 14 and 18 (thickness ZOO-20,000 A.).
  • This film 13 in its initial state is a metallic substance that is noted for its ability to become oxidized and fluoridized and thus exhibit dielectric properties.
  • a second set of dots or islands 16 is deposited on those portions of film 13 which are in registry with prior dots 20.
  • Base member 10 while shown as glass is required to have a surface that is optically flat and smooth. Whi e this has been depicted as glassy material, it will be obvious to those skilled in the art that other materials may also be used provided that they meet the requirements of flatness.
  • the strippable substrate 12 On the flat surface of supporting structure 10 the strippable substrate 12 is placed and may consist of any strippable film material. I have found that a lacquer base film, for example, cellulose nitrate or polystyrene, is admirably suited for this type of operation. It should be understood that substrate 12 should be of uniform thickness and should be easily stripped from both the supporting surface and the target itself.
  • a plurality of dots 20 is deposited on film 12 and may be formed by evaporating nonoxidized material through a foraminous mask (not shown) which is capable of being replaced in exact registry for a subsequent operation. The dots 20 may be deposited in any thickness ranging from about 2,000 to 20,000 angstroms. The dots 20 may be applied by either spraying or evaporating the material through the mask.
  • the mask is then removed and a uniform layer 13 of either aluminum or copper or any other readily oxidizable or fluoridizable material may be deposited over the dots 20 and substrate 12.
  • the foraminous mask is then replaced so that the openings therein are in exact registry with the prior dots 20, and dots 16 are then deposited.
  • the entire assembly is then dipped or placed in an oxidizing or fluoridizing atmosphere whereupon the exposed portions 14 of film 13 are completely oxidized or fluoridized and become dielectric.
  • the completed target assembly may now be stripped from substrate 12 and applied as a target electrode in a suitable storage tube.
  • a method of forming a target structure comprising the steps of forming a first plurality of chemically nonreactive conductors, depositing a chemically reactive continuous film over the first plurality of conductors, depositing a second plurality of chemically nonreactive conductors on the film in registry with the first plurality of conductors and chemically treating the exposed portions of the film to convert the exposed portions to a dielectric.
  • nonreactive conductors comprise metallic portions selected from the group consisting of gold, platinum, rhodium, chromium and nickel.
  • the chemically reactive layer comprises a metallic film selected from the group consisting of aluminum and copper.
  • a target structure for the storage of electrical charges comprising a continuous metal film, and a plurality of discreet spaced conductive metal elements on both sides of the metal film, each of the metal elements on one side of the film being located in register with a respective met-a1 element on the other side of the film, the portions of the film located between registering elements being electrically conductive while the exposed areas of the film surrounding said elements are nonconductive.
  • nonreactive metal is selected from the group consisting of gold, platinum, chromium, rhodium and nickel.

Landscapes

  • Physical Vapour Deposition (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
US134962A 1961-08-30 1961-08-30 Conducting plug target and method of making the same Expired - Lifetime US3221199A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL281909D NL281909A (enrdf_load_stackoverflow) 1961-08-30
US134962A US3221199A (en) 1961-08-30 1961-08-30 Conducting plug target and method of making the same
GB9399/62A GB1005249A (en) 1961-08-30 1962-03-12 Improvements relating to target structures applicable to television pickup electron discharge and storage devices
FR893328A FR1319120A (fr) 1961-08-30 1962-04-04 Cible à fiches conductrices et son procédé de fabrication
BE616203A BE616203A (fr) 1961-08-30 1962-04-09 Cible à fiches conductrices et son procédé de fabrication
CH478962A CH425886A (fr) 1961-08-30 1962-04-19 Cible à grains conducteurs pour dispositif à décharge électronique et procédé de fabrication de cette cible

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US134962A US3221199A (en) 1961-08-30 1961-08-30 Conducting plug target and method of making the same

Publications (1)

Publication Number Publication Date
US3221199A true US3221199A (en) 1965-11-30

Family

ID=22465828

Family Applications (1)

Application Number Title Priority Date Filing Date
US134962A Expired - Lifetime US3221199A (en) 1961-08-30 1961-08-30 Conducting plug target and method of making the same

Country Status (5)

Country Link
US (1) US3221199A (enrdf_load_stackoverflow)
BE (1) BE616203A (enrdf_load_stackoverflow)
CH (1) CH425886A (enrdf_load_stackoverflow)
GB (1) GB1005249A (enrdf_load_stackoverflow)
NL (1) NL281909A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3372067A (en) * 1963-02-25 1968-03-05 Telefunken Patent Method of forming a semiconductor by masking and diffusion
US3442701A (en) * 1965-05-19 1969-05-06 Bell Telephone Labor Inc Method of fabricating semiconductor contacts
US3867193A (en) * 1970-12-28 1975-02-18 Iwatsu Electric Co Ltd Process of producing a thin film circuit

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2588019A (en) * 1946-06-05 1952-03-04 Rca Corp Monoscope target for pickup tubes
US2945973A (en) * 1957-07-18 1960-07-19 Westinghouse Electric Corp Image device
US2963604A (en) * 1954-10-04 1960-12-06 Rca Corp Television camera tubes
US2976188A (en) * 1955-11-25 1961-03-21 Gen Mills Inc Method of producing a humidity senser
US2981611A (en) * 1956-03-14 1961-04-25 Metropolitanvickers Electrical Manufacture of printed electrical circuits or components
US2999177A (en) * 1946-08-19 1961-09-05 Fay E Null Infra-red-sensitive mosaic

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2588019A (en) * 1946-06-05 1952-03-04 Rca Corp Monoscope target for pickup tubes
US2999177A (en) * 1946-08-19 1961-09-05 Fay E Null Infra-red-sensitive mosaic
US2963604A (en) * 1954-10-04 1960-12-06 Rca Corp Television camera tubes
US2976188A (en) * 1955-11-25 1961-03-21 Gen Mills Inc Method of producing a humidity senser
US2981611A (en) * 1956-03-14 1961-04-25 Metropolitanvickers Electrical Manufacture of printed electrical circuits or components
US2945973A (en) * 1957-07-18 1960-07-19 Westinghouse Electric Corp Image device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3372067A (en) * 1963-02-25 1968-03-05 Telefunken Patent Method of forming a semiconductor by masking and diffusion
US3442701A (en) * 1965-05-19 1969-05-06 Bell Telephone Labor Inc Method of fabricating semiconductor contacts
US3867193A (en) * 1970-12-28 1975-02-18 Iwatsu Electric Co Ltd Process of producing a thin film circuit

Also Published As

Publication number Publication date
BE616203A (fr) 1962-07-31
GB1005249A (en) 1965-09-22
CH425886A (fr) 1966-12-15
NL281909A (enrdf_load_stackoverflow)

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