US3114863A - Opaque glass and semiconductive device made therefrom - Google Patents

Opaque glass and semiconductive device made therefrom Download PDF

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Publication number
US3114863A
US3114863A US824337A US82433759A US3114863A US 3114863 A US3114863 A US 3114863A US 824337 A US824337 A US 824337A US 82433759 A US82433759 A US 82433759A US 3114863 A US3114863 A US 3114863A
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US
United States
Prior art keywords
glass
computed
sulfur
batch
sealed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US824337A
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English (en)
Inventor
Robert H Dalton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Glass Works
Original Assignee
Corning Glass Works
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL252846D priority Critical patent/NL252846A/xx
Priority to NL120525D priority patent/NL120525C/xx
Application filed by Corning Glass Works filed Critical Corning Glass Works
Priority to US824337A priority patent/US3114863A/en
Priority to GB22295/60A priority patent/GB917037A/en
Priority to DEC21795A priority patent/DE1154904B/de
Priority to FR831575A priority patent/FR1272033A/fr
Priority to BE592485A priority patent/BE592485A/fr
Application granted granted Critical
Publication of US3114863A publication Critical patent/US3114863A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/02—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing by fusing glass directly to metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto

Definitions

  • An object of this invention is to provide a glass which, in sections as thin as 0.5 millimeter and even less, is substantially opaque to radiations between 0.2 and 2.0 microns, has an electrical resistivity greater than 100,000 ohms/cm. at 350 C. and greater than 3,000,000 ohms/ cm. at 250 C., an expansion coefficient of 45 to 55 10 C. between C. and 300 C., an equivalent setting point between 420 C. and 490 C., and a viscosity of at least 15,000 poises at its liquidus to permit drawing of tubing on automatic machines.
  • Another object of this invention is to provide a suitable glass-to-metal seal between an opaque glass and a netal having an expansion of about 50-60 l0 C. between 0 C. and 300 C., such as molybdenum or ironnickel-cobalt type alloy known in the trade as Kovar.
  • a still further object of this invention is to provide a semi-conductive device comprising a hermetically sealed, opaque glass container.
  • the drawing illustrates a cross-section View, greatly enlarged of a particularly suitable application for the present invention.
  • the above objectives can be achieved in a glass containing by weight 5664% SiO 15-21% B 0 0-4% Na O, 16% K 0, 04.0% Li O, the total Na O+K O+Li O being 4-6%, 25% A1 0 2-10% iron oxide computed as Fe O 0.050.5% sulfur computed as free sulfur and 25% cobalt oxide computed as C0 0
  • the glass may contain up to 3% TiQg, and up to 2% V 0 and up to 3% of a re ducing form of carbon computed as free carbon may be added to the batch to increase the intensity of the black color.
  • the glass-making constituents must be maintained within the above prescribed limits in order to produce all of the necessary requirements in the glass.
  • the alkali and B 0 content must not be less than the indicated minimum in order to produce a meltable glass while more than the stated maximum raises the expansion to an undesirable extent.
  • the amount of iron oxide, cobalt oxide, and sulfur are critical and each such constituent must be maintained individually and collectively within the stated ranges to produce a usable product. Thus, less than the minimum amount of any of these three constituents results in a glass which does not have the desired opacity throughout the whole spectrum between 0.2 and 2.0 microns. While these constituents have been found to be compatible in a glass melt when present in the specified proportions, exceeding the specified ranges of any one, or more, of these constituents results in the precipitation of metallic cobalt in the glass which makes the glass inhomogeneous and the cobalt will separate from the glass in the melting unit, causing failure of the tank or pot because of rapid refractory attack thereby.
  • the preferred glass composition as computed from the batch for a crucible melt of this present invention is as follows:
  • the glasses of this invention must be melted under reducing conditions which are achieved by selecting batch materials which are non-oxidizing in character and include suitable materials which are reducing in character. It is apparent from the composition of the final glass which includes sulfur, that elemental sulfur can be included as a reducing agent in the batch.
  • elemental sulfur can be included as a reducing agent in the batch.
  • iron sulfide which is an efficient reducing agent, is also a suitable source of sulfur.
  • the iron may be added solely as iron sulfide, but, because of the necessity of maintaining the correct degree of reduction, magnetite is also usually added to the batch in addition to iron sulfide, or iron oxalate, which is another reducing agent, may
  • additional reducing agent may be added to the batch in the form of carboneous matter such as lampblack, graphite, or powdered coal.
  • a preferred batch for melting the glass in a 96%-silica crucible in an electrically heated furnace is as follows, in parts by weight:
  • the glass so produced has an expansion of 49X 10 C. (-300 C.), an equivalent setting point of 478 C., other physical properties which make it suitable for its intended use and is at least 99.5% opaque to all radiations of wave lengths between 0.2 micron and 2.0 mi crons in a thickness of 18 mils.
  • Equivalent setting point is a hypothetical temperature utilized in the trade for describing the temperature at which the glass becomes rigid when in sealing relationship to a metal and is further explained in the article entitled Stress in Glass-Metal Seals in lour. Am. Cer. Soc., vol. 3, No. 7, pp. 224 et seq. (July 1950).
  • This same batch is not suitable for melting the glass in a pot type furnace as the cobalt oxide is reduced to the molten metal which attacks the pot and causes it to disintegrate.
  • a suitable batch for melting in a pot is obtained by reducing the amount of sulfur in the above batch to about 01-02%.
  • sulfur in the sulfide or free sulfur state can be readily oxidized at the elevated temperatures encountered during melting of this glass, the amount of sulfur remaining in the glass is less than the amount calculated from the batch.
  • carbon is introduced into the batch in a reduced state, some of it Will be oxidized to CO which vaporized from the glass melt and hence the amount of carbon remaining in the glass is less than the amount calculated on the basis of the reduced carbon added to the batch.
  • the glasses of this invention are particularly suitable for the formation of a container for a semi-conductive crystal because they are opaque to radiation having Wave lengths between 0.2 and 2.0 microns.
  • opaque I mean that they transmit less than 1% of the radiation of any particular wave length in the thickness prescribed.
  • these glasses have viscosity characteristics which permit forming the glass into thin walled tubes by conventional tube-drawing apparatus and the glass possesses expansion characteristics and other desirable properties such as setting point, which allows them to be sealed directly to molybdenum or Kovar wire, which is utilized for making electrical contact to the crystal in the container through the walls of the container.
  • an hermetically-sealed semiconductive device comprising a a semiconductor element 10, such as a crystal of germanium or silicon, a point contact element 11, a conductor 12 in electrical contact with the point contact element and a second conductor 13 in electrical contact with the semiconductor element.
  • a semiconductor element 10 such as a crystal of germanium or silicon
  • a point contact element 11 a conductor 12 in electrical contact with the point contact element
  • a second conductor 13 in electrical contact with the semiconductor element.
  • Both conductors, 12 and 13 are molybdenum or Kovar wire.
  • the electricity-carrying elements are hermetically sealed within an opaque glass container comprising an outer glass tube 14 and glass beads 15 and 16, each of said glass elements consisting essentially by weight as calculated from the batch, 56-64% SiO 15-21% B 0 0-4% Na O, 1-6% K 0, 0-1.0% Li O, the total Na O+K O+Li O being 46%, 2-5% A1 0 2-10% iron oxide computed as Fe O 2-5% cobalt oxide computed as C0 0 0.050.5% sulfur determined as free sulfur, 03% Tl02, 0-2% V 0 and 03% of a reducing form of carbon computed as free carbon.
  • the glass beads and 16 are sealed to the conductors 12 and 13, respectively, and each bead is also sealed to the outer glass tube 14.
  • the preferred method of making the glass-to-metal seal utilizes a bead cut from glass tubing of the specified composition containing a central hole with a diameter slightly greater than the wire diameter. The bead is then slipped on the wire and rapidly heated to a temperature of about 1000" C. to rapidly fuse the bead to the wire.
  • a suitable method of heating the bead is an oxy-hydrogen torch adjusted to a neutral flame.
  • one subcombination comprising a bead sealed to a conductor having the point contact element affixed thereto and another comprising a bead sealed to a conductor and to the outer glass tube are preferably assembled prior to the assembly of the complete device. This assembly then re quires only sealing of the glass bead to the outer glass tube in close relationship with the semiconductive element.
  • a sealing glass opaque to radiation with Wave lengths of 0.2-2.0 microns and having a coefficient of linear expansion between 0 C. and 300 C. of about to 10" C. suitable for sealing to a wire composed of a metal selected from the group consisting of molybdenum and iron-nickel-cobalt alloy, which glass consists essentially by weight as computed from the batch of 56-64% SiO 15-21% B 0 04% Na O, 16% K 0, 01% Li O, the total NaO+K O+Li O being 46%, 25% A1 0 2l0% iron oxide computed as Fe O 2-5% cobalt oxide computed as C0 0 0.05-0.5% reduced sulfur computed as free sulfur, 0-3% TiO 0-2% V 9 and 0-3% of reduced carbon computed as free carbon.
  • a sealing glass according to claim 1 consisting essentially by weight as computed from the batch of 59% S40 1.2% Na O, 3.2% K 0, 0.8% Li O, 1.0% TiO 1.0% V 0 18.3% B 0 2.8% A1 0 3.8% cobalt oxide computed as C0 0 8.8% iron oxide computed as Fe O and 0.4% reduced sulfur computed as free sulfur.
  • An hermetically sealed semiconductor device comprising a semiconductor element, a point contact element, an outer glass tube, two conductors, each extending through a glass bead and sealed thereto, said first conductor electrically connected with said point contact element, said second conductor electrically connected with said semiconductor element, each of said beads sealed to said outer glass tube, characterized by the fact that each conductor consists of wire composed of a metal selected from the group consisting of molybdenum and iron-nickelcobalt alloy and each glass element consists essentially by weight as computed from the batch of 56-64% SiO 15-21% B 0 0-4% Na O, 1-6% K 0, 0-1.0% Li O, the total Na O+K O+Li O being 46%, 2-5% A1 0 2-10% iron oxide computed as Fe O 25% cobalt oxide computed as C0 0 0.050.5% reduced sulfur computed as free sulfur, 0-3% TiO 0-2% V 0 and 0-3% of reduced carbon computed as free carbon.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Glass Compositions (AREA)
US824337A 1959-07-01 1959-07-01 Opaque glass and semiconductive device made therefrom Expired - Lifetime US3114863A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL252846D NL252846A (es) 1959-07-01
NL120525D NL120525C (es) 1959-07-01
US824337A US3114863A (en) 1959-07-01 1959-07-01 Opaque glass and semiconductive device made therefrom
GB22295/60A GB917037A (en) 1959-07-01 1960-06-24 Opaque glass and semi-conductive device made therefrom
DEC21795A DE1154904B (de) 1959-07-01 1960-06-29 Undurchlaessiges Glas fuer Strahlungen zwischen 0, 2 und 2, 0ª– Wellenlaenge mit sehr duennem Querschnitt
FR831575A FR1272033A (fr) 1959-07-01 1960-06-30 Verre opaque et élément semi-conducteur constitué à l'aide de ce verre
BE592485A BE592485A (fr) 1959-07-01 1960-06-30 Verre opaqe et élément semi-conducteur constitué à l'aide de ce verre.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US824337A US3114863A (en) 1959-07-01 1959-07-01 Opaque glass and semiconductive device made therefrom

Publications (1)

Publication Number Publication Date
US3114863A true US3114863A (en) 1963-12-17

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US824337A Expired - Lifetime US3114863A (en) 1959-07-01 1959-07-01 Opaque glass and semiconductive device made therefrom

Country Status (5)

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US (1) US3114863A (es)
BE (1) BE592485A (es)
DE (1) DE1154904B (es)
GB (1) GB917037A (es)
NL (2) NL120525C (es)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3206659A (en) * 1963-05-10 1965-09-14 Jfd Electronics Corp Trimmer capacitor with radiation absorbing glass envelope
US3320353A (en) * 1963-10-29 1967-05-16 Corning Glass Works Packaged electronic device
US4342553A (en) * 1980-10-01 1982-08-03 General Electric Company Glass to nickel-iron alloy seal

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US756676A (en) * 1902-11-10 1904-04-05 Internat Wireless Telegraph Company Wave-responsive device.
US2220690A (en) * 1937-03-09 1940-11-05 Stupakoff Lab Inc Glass and metal construction unit
US2582852A (en) * 1948-06-16 1952-01-15 Pittsburgh Corning Corp Method of making cellular glass of light color

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US756676A (en) * 1902-11-10 1904-04-05 Internat Wireless Telegraph Company Wave-responsive device.
US2220690A (en) * 1937-03-09 1940-11-05 Stupakoff Lab Inc Glass and metal construction unit
US2582852A (en) * 1948-06-16 1952-01-15 Pittsburgh Corning Corp Method of making cellular glass of light color

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3206659A (en) * 1963-05-10 1965-09-14 Jfd Electronics Corp Trimmer capacitor with radiation absorbing glass envelope
US3320353A (en) * 1963-10-29 1967-05-16 Corning Glass Works Packaged electronic device
US4342553A (en) * 1980-10-01 1982-08-03 General Electric Company Glass to nickel-iron alloy seal

Also Published As

Publication number Publication date
DE1154904B (de) 1963-09-26
NL120525C (es) 1965-08-16
NL252846A (es)
BE592485A (fr) 1960-12-30
GB917037A (en) 1963-01-30

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