US3079591A - Memory devices - Google Patents

Memory devices Download PDF

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Publication number
US3079591A
US3079591A US802371A US80237159A US3079591A US 3079591 A US3079591 A US 3079591A US 802371 A US802371 A US 802371A US 80237159 A US80237159 A US 80237159A US 3079591 A US3079591 A US 3079591A
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Prior art keywords
ferroelectric
elements
photoconductive
information
memory
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Expired - Lifetime
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US802371A
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English (en)
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John R Anderson
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NCR Voyix Corp
National Cash Register Co
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NCR Corp
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Priority to NL247499D priority Critical patent/NL247499A/xx
Priority to NL127546D priority patent/NL127546C/xx
Application filed by NCR Corp filed Critical NCR Corp
Priority to US802371A priority patent/US3079591A/en
Priority to SE1208559A priority patent/SE220369C1/sv
Priority to BE587179A priority patent/BE587179A/fr
Priority to CH362119D priority patent/CH362119A/fr
Priority to GB10091/60A priority patent/GB873897A/en
Priority to DEN18066A priority patent/DE1132749B/de
Priority to FR822388A priority patent/FR1251919A/fr
Priority to US208476A priority patent/US3158842A/en
Application granted granted Critical
Publication of US3079591A publication Critical patent/US3079591A/en
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Definitions

  • This invention relates to memory devices, and more articularly relates to memory devices .,mployir:g bistable ferroelectric memory elements.
  • One of the essential elements of an electronic data processing system is a memory or information storage device. Since a large amount of information must commonly be stored in such a system, the cost per bit or element of information stored becomes of great luportance. Bistable ferroelectric materials show promise for use in the storage of information because of the possibility of using such materials in connection with plating, printing, depositing, or similar techniques to fabricate packaged memory units at relatively low cost.
  • a matrix of ferroelectric elements is provided either in the form of a plurality of individual elements or in the form of a plurality of effectively individual elemental volumes in a block oi ferroelectric material.
  • Photoconductively operated access means are provided for the ferroelectric elements, and electroluminescent means are utilized for output purposes.
  • diiierent embodiments of the invention are disclosed. it will be seen that a memory or storage device consisting entirely of solid state elements has thus been devised, the design of which lends itself admirably to the simple and inexpensive fabrication techniques previously discussed.
  • ferroelectric materials have rectangular hysteresis characteristi in which there are two remanent conditions of electrical charge (Q) or polarization, in which ferroelectric elements exhibit substantial charge saturatic-n, these elements are bistable and therefore well suited for storage of information.
  • Q electrical charge
  • polarization in which ferroelectric elements exhibit substantial charge saturatic-n
  • ferroelectric elements are bistable and therefore well suited for storage of information.
  • use of ferroelectric elements in storage matrices is known, as shown, for example, the United States patent to loin R. Anderson, No. 2,695,398, is d November 23, 1954.
  • the above patent did contemplate the use of ferroelectric elements in combination with photoconductive cells in the manner di closed herein to provide a memory device of extremely simple yet efficient design.
  • optical techniques can be used for access, thus greatly reducing the total cost of access circuitry.
  • sequential access can be provided with one or more simple rotating disks with a single light on them impinging on successive rows and columns.
  • Access can also be obtained by electroluminescent matrix arrays, if desired.
  • Another object is to provide a matrix memory using storage elements of ferroelectric materials which have bistable characteristics.
  • Another object is to provide a matrix memory utilizing a combination of ferroelectric, photoconductive, and elec troluminescent elements.
  • An additional object is to provide a matrix memory capable of being fabricated by simple and inexpensive techniques.
  • a further object is to provide a memory device in which electrodes and photoconductive elements are plated or otherwise deposited upon opposite sides of a block of erroelectric material in such manner as to provide a plurality of eilective individual elemental volumes of ferroelectric material at intersections of the electrodes.
  • Yet another object is to provide a memory device which utilizes a combination or ferroelectric and photoconduc tive elements.
  • the invention includes certain novel features of construction and combinations of parts, a preferred form or embodiment or" which is hereinafter described with reference to the drawing which accompanies and forms a part of this speciiication.
  • FIG. 1 is a graph showing a hysteresis loop for a ferroe ectric element of the type utilized in the devices of FIG. 2 is a diag am of a matrix memory circuit constructed in accordance with this invention, and utilizing el ctroluminescent output means and photoconductive input means;
  • FIG. 3 is a diagram of a second embodiment of a matrix memory circuit constructed in accordance with this invention.
  • FEG. 4 is a perspective View showing one form in which electrodes may be placed upon a block of ferroelectric material to form a plurality of individual efiective ferroelectric volumes for use in a matrix memory;
  • FIG. 5 is a perspective view showing both electrodes and photeconductive elements placed upon a block of ierroelectric material in such manner as to form a memory device.
  • ferroelectric elements utilized in the matrix memories or H88. 2 and 3 are shown there in the form of capacitors, with a ferroelectric material, such as barium titanate, forming the dielectric.
  • Barium titanate is one of 9. gr up of materials, commonly termed ferroelectrics, which have substantially rectangular hysteresis loops.
  • a hysteresis loop for barium titanate crystals of the type used in the present invention is illustrated in FIG. 1, where the vertical axis represents electrical displacement or degree of polarization and the horizontal axis represents the voltage applied across the terminals of the ferroelectric elements, this voltage bearing a proportional relation to the electrical field strength.
  • Points A and B on the loop of FIG. 1 represent stable states of polarization, and the ferroelectric element, when placed in either of these states by application of the required electrical field across the terminals thereof, will remain in such state for a considerable period of time with all external fields removed.
  • All of the ferroelectric elements in a matrix memory are customarily polarized in one direction before use of the memory is commenced.
  • Information may then be stored in the individual elements of the memory by applying voltages to the electrodes of the selected element to reverse its direction of polarization.
  • Information which has been" stored in any individual element of a matrix may be read out by applying voltages tothe electrodes of said element to restore the initial direction'o f polarization of the ferroelectric material making up the dielectric portion of the element. This reversal of polarization will produce an output signal from the element which may be detected to determine which of the two stable states the element is in.
  • a matrix memory of the form shown in FIG. 2 may contain any desired number or ferroelectric elements, or effective ferroelectric elemental volumes in a block or slab of, ferroelectric material, but is shown containing a total of sixteen ferroelectric elements arranged in four rows and four columns.
  • ferroelectric components of the matrix memory circuits of FIGS. 2 and 3 mayconsist either of individual ferro'electric elements, or of effectively individual elemental volumes defined by the intersection of two electrodes on opposite sides of a block or slab of ferroelectric material, for the sake of simplicity in description, these components will hereinafter be re ferred to as ferroelectric elements.
  • a ferroelectric' element, indicated by the reference character 24,' is disposed at each intersection of the commons.
  • a first path extends from points 33, 34, 35, and 36 on the commons to 28, respectively, through a photoconductive cell 37 to a terminal connected to a base reference potential, shown here as ground.
  • a sec ond path extends from each of the points 33 to 36 inclusive through a photoconductive cell 39 to a common 46 connected to a terminal 41 ,to which an electrical signal having a wave form such as that shown at 42 may be pp i d; H
  • Poins45, 46, 47, and 48 on the commons 29, 3t), 31, and 32, respectively, are each connected over a firstpath through an electroluminescent element 59 to a terminal connected to a base reference potential, shown in FIG. 2 as ground.
  • the points 45 to 48 inclusive are also each connected over a second path through a photoconductive cell 52 to a terminal 53, to which an'electrical signal having awave form such as that shown at 54 may be applied.
  • a train of pulses (positive pulses, such 'ss-s wwnm wave form 54, wil be used for purposes of illustration herein) is applied to the terminals 53, and the desired ferroelectric' element is selected by applying an optical pulse to the photoconductive' cell 37 on the horizontal common with which the selected ferroelectric optical-pulse to the' photoconductive cell 52 on the vertid cal common with which the selected ferroelectric element is associated.
  • photoconductive materials possess the property of changing their electrical resistance in response to changes in radiation of certain wave lengths which impinge on them.
  • One material frequently used for photoconductive cells of the type shown herein is cadmium sulfide, which has a high electrical resistance when not illuminated by radiation of suitable wave lengths, and which has a relatively low resistance when it is so illuminated.
  • the photoconductive cells 3'7, 39, and 52 of the matrix memory of FIG. 2 therefore act as switches which are open when the cells aredark and which are closed when the cells are illuminated.
  • Any suitable source may be used for applying radiation to the photoconductive cells.
  • electroluminescent elements or neon glow tubes operated in timed relation to the signals applied to the terminals 53, may be used.
  • a circuit is in e'fiect completed through one of the ferroelectric elements 24. For example, assuming that the ferroelectric element associated with the commons 27 and 3% is selected, a circuit is completed from the terminal 53 over an illuminated photoconductive cell 52, the point 46, the common 30, the selected ferroelectric element 24A, the common 27, the point 35, and the illuminated photoconductive cell 37 to ground.
  • the selected ferroelectric element 24A is thus switched from a first polarized state, to which it, like all of the other ferroelectric elements in the matrix memory has been initially set by appropriate use of the input means, to a second polarized state, in which it is polarized in the opposite direction.
  • Binary information is thus stored in the element 24A. Circuits through the remaining elements 24 are blocked because one or both of the associated commons are connected to a photoconductivecell 37 or 52 in a high-resistance state, which effectively acts as an open switch.
  • Reading out of information stored in the matrix memory is accomplished in the following manner.
  • a train of pulses (in the illustrated embodiment, positive pulses such as shown in the wave form 42) is applied to the terminal 41 of FIG. 2.
  • the photocon- -ductive cell 39'associated with the horizontal row which it is desired to read out is illuminated by an optical pulse. This in effect completes the circuit from the terminal 41 over the common 40 and the photo-conductive cell 39 of the selected row to the common related to the horizontal row which it is desired to read out.
  • Pulses from the terminal 41 are thus applied to the ferroelectric elements 24 of the selected row, said pulses being applied to the ferroelectric elements in a direction opposite to the direction of application of the writing pulses.
  • the electroluminescent element 50 which is fabricated from a suitable electroluminescent material such as a zinc sulfide copper-halide-activated type or" phosphor, is caused to glow, or emit radiation, when excited by a change in potential gradient thereac'ross.
  • A"detectableoutput means' is thus provided for each vertical column of ferroelectric elements 24, so that it is possible to determine which ferroelectric elements in each row of the matrix memory have had information stored therein. With the arrangement shown in FIG. 2, it will be seen that readout of all the ferroelectric elements of a selected horizontal row takes place simultaneously when the readout pulses 42 are applied to the terminal 41.
  • the electroluminescent elements 5% ⁇ may be used to control photoconductive cells, either in additional matrices or in other logical or output circuitry.
  • the electroluminescent elements of the matrix memory of FIG. 2 may be used to provide visible indication of the information which has been stored in the memory. It is thus seen that the matrix memory of HG. 2 provides a simple, effective, solid state device in which access and output circuitry may be electrically isolated from other components in the data-processing system.
  • FIG. 4 A block or slab 6% of some suitable ferroelectric material, such as barium titanate, is provided on one side with a plurality of spaced-apart parallel elongated electrodes 61, and is provi ed on an opposite side with a similar plurality of parallel elongated spaced-apart electrodes 62, which are oriented transversely, here shown as at right angles, to the plurality of electrodes 61..
  • Application of an electrical signal to a circuit which includes the electrodes 61 and 62 establish-es an electrical field through the ferroelectric material at the area of intersection of the selected electrodes 61 and ea.
  • a field of sufiicient strength through the ferroelectric maerial in the volume of the intersection between the selected electrodes 61 and 62 causes this elemental volume to be polarized in a direction according to the type of signal employed. Since ferroelectrics are semi-conducting materials, the electrical field is localized at the intersection, and therefore the ferroelectric material beyond the intersection is not aflected.
  • the matrix thus formed may be connected to its access and output circuitry by conventional Wiring, by printed circuitry, or the acces and output components may be formed either adjacent or on the ferroelectric matrix by depositing techniques such as those discussed above.
  • the matrix memory circuit of FIG. 3 is somewhat similar in construction and operation to the circuit of PEG. 2.
  • This memory may also contain any desired number of memory storage units, either in the form of individual ferroelectric elements, or in the form of efiective elemental ferroelectric volumes in a block or slab of ferroelectrie material, the e'l'r'ective volumes in such case consisting of the volume of ferroelectric material at each intersection between a first plurality of electrodes on one side of the ferroelectric blocx, and a transversely-arran ed plurality of electrodes on the other side of the block.
  • a particular construction which may be employed to form this matrix will be subsequently described in somewhat greater detail.
  • the matrix memory of FIG. 3 is shown containing eighteen ferroelectric elements 65, arranged in six horizontal rows and three vertical columns.
  • the six horizontal rows are define-d by a plurality of commons, 56, 67, 68, 69, 7:), 71, and the three vertical columns are defined by a plurality of commons 72, 73, 74.
  • the horizontal commons 66 to 71 inclusive are connect-edat points 75, 76, 77, 73, 79, till, respectively, to first paths each extending through a photoconductive cell 81 to a common 32 connected to a terminal connected in turn to a base reference potential, shown in FIG. 3 as ground.
  • the commons 66 to 71 inclusive are also connected at points 75 to St ⁇ inclusive to second paths, each extending through an electroluminescent element 85 to a terminal connected in turn to a base reference potential, shown in PPS. 3 as ground.
  • the vertical common 72 to 7d inclusive are connected to their associated ferroelectric elements 65 through photoconductive cells 87, an individual photoconductive cell 87 being shown in association with each of the ferroelectric elements 65, although the cells 87 for a given column may in fact be elemental volumes on a single larger photoconductive cell.
  • the commons 72 to 74 inclusive are connected to a further common $9, which is in turn connected to a terminal 99, to which an e ectrical signal may be applied.
  • the matrix memory of PEG. 3 is nor ally set prior to use, by its input means, so that all of the ferroelectric elements are in one state of polarization. Information may then be stored in the memory by reversing the direction of polarization of selected ferroelectric elements.
  • an electrical signal having a wave form such as that shown at 92 which includes both positive and negative excursions is applied to the terminal 9%.
  • the positive excursions of the wave form are used for Writing information
  • the negative excursions are used for readout of information, although a reverse arrangement could be used if desired.
  • a light source is used which illuminates all of the photoconductive cells 87 in a given vertical column, in coincident timing relation to the positive pulses of the wave form 92. This may be accomplished, if desired, by utilizing the Wave form 92 or an identically-timed Wave form to operate an electroluminescent element which is optically coupled to all of the photoconductive cells in the selected vertical column. Also simultaneously With the positive excursions of the wave form d2, the selected one of the photoconductive cells 81 associated with the selected horizontal row common is also illuminated.
  • a circuit is thus completed from the terminal 9%) over the common 89, the selected one of the vertical commons 72 to 74 inclusive, the associated photoconductive cells 87, the ferroelectric element which is associated with the row in which the selected photoconductive cell 31 has been illuminated, and the common 82, to ground.
  • the selected ferroelectric element as thus has its direction of polarization reversed from the initial state to which all of the ferroelectric elements are set, so that information is thus stored in the selected element For example, let it be assumed that it is desired to store binary information in the ferroelectric element 65A.
  • a circuit is completed from the terminal over the common 89, the common 73, the photoconductive cell 87A, the ferroelectric element 65A, the common 68, the point '77, the selected photoconductive cell 81A, and the common 32 to ground, the positive pulse transmitted over this circuit being effective to reverse the direction of polarization of the ierroelectric element 6A to store binary ini'ormatioin therein.
  • the remaining ferroelectric elements associated with the common 73 will not be switched from one polarity to the other, since completion of the circuits in which they are located to ground is blocked by the dark or uniliurninated photoconductive cells 81 in said circuits.
  • the electroluminescent elements '35 are also hi h-resistance components, though not of such high resistance as the dark photoconductive cells 81, a voltage drop across the ferroelectric elements through such a circuit results which is not suilicient to reverse the polarity of the ferroelectric elements.
  • the electroluminescent elements may be illuminated, at least to some degree, in such instances, but, since such illumination occurs during Write time rather than read time, this produces no difiiculty.
  • the photoconductive cells 37 for the vertical column which it is desired to read out are illuminated in timing Coincident with the application of a negative pulse of the wave form 9 2 to the terminal 99.
  • the negative pulse causes a further reversal of the state of polarization of any ferroelectric element as in which information has been stored. This reversal of polarity is sufficient to cause the electroluminescent element 85 associated with the horizontal row of the selected ferroelectrio element to glow, thus indicating that the selected element has had information stored therein.
  • the photocondu-ctive cells 87 of that column are illuminated simultaneously with the application of a negative excursion of the wave formfii. to the terminal 99.
  • a circuit is thus completed from the terminal at) over the common 39, the common 73, the photoconductive. cell 87A, the ferroelectric element 65A, the common 68, the point 77, and the electroluminescent element 85A to ground.
  • the reversal'of polarity of the ferroelectric element 65A produces an electrical pulse of sufficient strength to cause the electroluminescent element 85A to glow; thus indicating that information has been stored? in the ferroelec trio element 65A.
  • FIG. 5 One form of physical construction which may be. used to implement the circuit of FIG. 3' is shown in FIG. 5.
  • a slab or block of ferroelectric material 5 is provided on one side with a plurality of spaced-apart elongated parallel electrodes 96, which may be located upon the ferroelectric block by any suitable means, such as vacuum'vapor depositing or chemical depositing.
  • a plurality of elongated spaced-apart parallel photoconductive' cells 97 which are oriented transversely, shown in FIG. 5 as at right angles, to the electrodes96.
  • the photo-conductive cells 97 may be deposited on the ferroelectric block 95 by techniques similar tothose described for the deposition of the electrodes 96.
  • a corresponding plurality of spaced-apart elongated parallel electrodes 98 which are formed of a transparent material.
  • a common conductor 99 is deposited at one end ofthe ferroelectric block 95 to connect all of the photoconductive cells.
  • the electrodes 96 correspond to the commons 66 to 71 inclusive; the photoconductive cells 97 correspond to the columns of the photoconductive cells 87 in the circuit of FIG. 3; the electrodes 98 correspond to the commons 72 to 74 inclusive of the circult of FIG. 3; the conductor 99 of FIG. 5 corresponds to the common 89 of the circuit of FIG. 3; and the elemental volumes defined by the intersections of the electrodes 96 and 93 in the ferroelectric block 95 correspond to the individual ferroelectric elements 650i the circuit of FIG. 3.
  • the additional required access and output components for the circuit of FIG. 3 may be connected to the physical construction of FIG. 5 by conventional Wiring, printed circuitry, or other appronrinte means.
  • the ferroelectric block 95 may be formed as a hollow cylinder with the photoconductive cells 97 on the interior wall. A light source may then be placed at the axis of the cylinder, with a rotating apertured mask, so that the photoconductive cells 97 are sequentially illuminated.
  • ferroelectric or photoconductiye elements it should be re alized. that this term is intended to include both individ; ual ferroelectric or photoconductive elements and eleiental volumes of a larger ferroelectric or photocorrductive block or slab.
  • An information storage device comprising, in com bination, a plurality of ferroelectric elements arranged in rows and columns; a corresponding plurality of photo; conductive elements arranged in rows and columns, each photoconductiye element being serially coupled, to a terroelectric element to form a pair of associated elements; a plnrality of conductorsincluding, a, conductor coupled to all of thepairs of associatedelementsj, of; each row anda conductor coupled toall of, thepairsf'of associated elements of each column, said conductors being elfective to apply electrical fields across the ferroelectric elements to polarize said; elements in a given direction forrthe storage of information therein; and further photoconductive means associated with certain of said conductors to cooperate with the first-mentioned photoconductive elements, for selecting individual ferroelectric elements-for the sto'rageof information therein.
  • An information storage device comprising, in combination, a plurality of ferroelectric elements arranged in rows and columns; a correspondingplurality of photo.- conductive elements arrangedin rows. and columns, each photoconductive element being serially coupled to a ferroelectric element to form a'pair of associated elements; a plurality of conductors including a conductor coupled to all of the pairs of associated elements of each'row.
  • An information storage device comprising, in com bination, a ferroelectric element having two stable states; a first plurality of elongated electrodes disposed in substantially parallel relationship on one side of the ferroelectric element in direct physical contact therewith; a pin;- rality of: elongated photoconductive elements disposed in substantially parallel relationship on an opposite side of the ferroelectric element and extendin transversely of the plurality of electrodes on the opposite side of the ferroelectric element; a second plurality of elongated transparent electrodes, each being superimposed upon one of the'photoconcluctive elements; and a common conductor electrially connecting all of the elongated photo conductive elements, whereby a plurality of'eifectively individual ferrojelectric elements arranged in rows and col ums are provided at the intersections of the first plurality of electrodes with the plurality of photoconductive' elements.
  • An information storage device comprising,.in combination; a bistable fer-roelectric member; a first plurality of elongated'electrodes disposed in substantially parallel relationship on one side of the ferroelectric member in direct physical contact therewith; a plurality of elongated photoconductive elements disposed in substantially parallel relationship on opposite side of the terroelectric member and extending transversely of the plurality of electrodes on the opposite side of the ferroelectric member; and a second plurality of elongated transparent electrodes, each being superimposed upon one of the photoconductive elements, whereby a plurality of effectively individual ferroelectric elements arranged in rows and columns are provided at the intersections of the first plu rality of electrodes with the plurality of photocouductive elements.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Liquid Crystal Display Device Control (AREA)
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US802371A 1959-03-27 1959-03-27 Memory devices Expired - Lifetime US3079591A (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
NL247499D NL247499A (enrdf_load_stackoverflow) 1959-03-27
NL127546D NL127546C (enrdf_load_stackoverflow) 1959-03-27
US802371A US3079591A (en) 1959-03-27 1959-03-27 Memory devices
SE1208559A SE220369C1 (enrdf_load_stackoverflow) 1959-03-27 1959-12-22
BE587179A BE587179A (fr) 1959-03-27 1960-02-02 Matrice de mémoire ferro-électrique
CH362119D CH362119A (fr) 1959-03-27 1960-02-03 Matrice de mise en mémoire de données à éléments ferro-électriques
GB10091/60A GB873897A (en) 1959-03-27 1960-03-22 Data storage matrix
DEN18066A DE1132749B (de) 1959-03-27 1960-03-23 Ferroelektrische Matrix
FR822388A FR1251919A (fr) 1959-03-27 1960-03-25 Matrice de mémoire ferro-électrique
US208476A US3158842A (en) 1959-03-27 1962-07-09 Memory devices using ferroelectric capacitors and photoconductors

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BE (1) BE587179A (enrdf_load_stackoverflow)
SE (1) SE220369C1 (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623031A (en) * 1968-03-30 1971-11-23 Hitachi Ltd Ferroelectric storage device using gadolinium molybdate
US4040720A (en) * 1975-04-21 1977-08-09 Rockwell International Corporation Ferroelectric liquid crystal display
US5434811A (en) * 1987-11-19 1995-07-18 National Semiconductor Corporation Non-destructive read ferroelectric based memory circuit

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2877376A (en) * 1955-09-06 1959-03-10 Itt Phosphor screen device
US2885656A (en) * 1954-01-06 1959-05-05 Ibm System for storing and releasing information
US2897399A (en) * 1957-01-25 1959-07-28 Ibm Memory devices
US2904626A (en) * 1955-05-31 1959-09-15 Rca Corp Electrical display device
US2905830A (en) * 1955-12-07 1959-09-22 Rca Corp Light amplifying device
US2907001A (en) * 1956-12-31 1959-09-29 Rca Corp Information handling systems

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2885656A (en) * 1954-01-06 1959-05-05 Ibm System for storing and releasing information
US2904626A (en) * 1955-05-31 1959-09-15 Rca Corp Electrical display device
US2877376A (en) * 1955-09-06 1959-03-10 Itt Phosphor screen device
US2905830A (en) * 1955-12-07 1959-09-22 Rca Corp Light amplifying device
US2907001A (en) * 1956-12-31 1959-09-29 Rca Corp Information handling systems
US2897399A (en) * 1957-01-25 1959-07-28 Ibm Memory devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623031A (en) * 1968-03-30 1971-11-23 Hitachi Ltd Ferroelectric storage device using gadolinium molybdate
US4040720A (en) * 1975-04-21 1977-08-09 Rockwell International Corporation Ferroelectric liquid crystal display
US5434811A (en) * 1987-11-19 1995-07-18 National Semiconductor Corporation Non-destructive read ferroelectric based memory circuit

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SE220369C1 (enrdf_load_stackoverflow) 1968-05-07
BE587179A (fr) 1960-05-30

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