US2938816A - Vaporization method of producing thin layers of semiconducting compounds - Google Patents

Vaporization method of producing thin layers of semiconducting compounds Download PDF

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US2938816A
US2938816A US739577A US73957758A US2938816A US 2938816 A US2938816 A US 2938816A US 739577 A US739577 A US 739577A US 73957758 A US73957758 A US 73957758A US 2938816 A US2938816 A US 2938816A
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vapor
temperature
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Gunther Karl-Georg
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Siemens Schuckertwerke AG
Siemens AG
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/158—Sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/971—Stoichiometric control of host substrate composition

Definitions

  • This invention relates to the production of thin layers or coatings from semiconducting substances. It particularly relates to the production, on a carrier surface, of a thin layer of multi-component substance, such as a semiconductor compound or alloy, by a process involving vaporization of the compounds. It especially relates to production of such a layer from a semiconductor compound which is composed of component elements that differ considerably in their respective partial vapor pressures above a melt of the compound.
  • semiconducting layers such as are used for example in electric, photoelectric or optical devices, may consist of semiconducting elements such as germanium, or they may consist of semiconducting alloys, or of compounds such as indium arsenide and antimonide, indium phosphide, gallium arsenide, gallium phosphide, and others.
  • semiconducting layers When semiconducting layers are to be prepared from elemental substances, they can be produced simply by vaporizing the element in vacuum onto a carrier. However, the production of thin layers, by vaporization, encounters difiiculties when the layer is to consist of a semiconducting compound, particularly a compound whose constituents above the melt of the compound have considerably difierent vapor pressures.
  • a B compounds i.e. compounds formed of an element from the third group (boron, aluminum, gallium, indium) of the periodic system with an element from the fifth group (nitrogen, phosphorus, arsenic, antimony).
  • These substances are: BN, BP, BAs, AlN, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs and InSb.
  • coatings of A B semiconductor compounds can be produced by the method of the present invention, viz., mercury telluride.
  • An object of this invention is to overcome these difiiculties and to provide a method which readily permits the production of thin layers by vaporization from those semiconducting compounds whose constituents above the melt exhibit considerably different amounts of vapor pressure.
  • the carrier or recipient surface which is to receive the vaporization-deposited layer of the compound is kept, during the vaporization process, at a temperature which is between the condensation temperature of the constituent of higher volatility, on the one hand, and the condensation temperatures of the constituent of lesser volatility and of the compound on the other hand.
  • the density of the beam of vapor impinging upon the recipient is advantageously so rated as to provide in front of the recipient an excess of the constituent of higher volatility.
  • two vaporizer vessels denoted by 1 and 2 are provided from which the constituents A and B respectively are vaporized onto a recipient .or a preferably fiat planar carrier sheet 3 in order to form thereon a semiconducting layer consisting of the compound AB.
  • vessel 4 is disposed upon or fixed to a base plate 5 having a suction conduit 6 connected therein.
  • Shown at 7 are the heating devices for evaporator vessels 1 and 2. Heaters 7 are mounted upon the ceramic bases 8.
  • the heaters 7 comprise cylinder-shaped incandescent sheet metal members.
  • the effective receiving area of the carrier 3, in which the compound is to be produced, is located within the common or overlapping impinging range of both component vapor beams and is identified on the drawing by a double-headed arrow.
  • the vapor beams A and B may have their axes parallel to each other or inclined toward each other. Beam A may be adjusted asymmetrically, if desired, to accentuate or to modify the decrease in impinging density on surface 3, from the left to the right, in the overlapped portion.
  • the apertures of the vessels 1 and 2 can be circular or transverse parallel slits.
  • the vessels 1 and 2 contain the component sub stances As and In respectively. Both vessels are heated, so that the components contained therein are vaporized through an opening of the vessel toward the recipient 3.
  • the recipient 3 in this case is heated to a temperature of approximately 200 C. This temperature is below the condensation temperatures of the less volatile In component and of the compound InAs. But it is higher than the condensation temperaturre of the more volatile As component, on the basis of an impinging density of the As vapor beam of between 10 to 10 molecules per square centimeter per second. As a result of this selection of parameters, the entire In vapor flow condenses on the recipient.
  • the As vapor beam would be completely reflected.
  • the incoming As molecules form, together with the In molecules, the compound InAs, which likewise condenses on the recipient, to an extent predetermined by the number of the In molecules present in the beam.
  • the excessive As molecules are reflected back into the vapor space.
  • the pressure in the vacuum vessel be not greater than 10- mm. Hg, generally. At such a pressure, the incorporation of foreign gas atoms into the semi-conductor layer is negligibly small. Tests made with a still lower residual gas pressure exhibited only a slight improvement in the quality of the layer.
  • the impinging densities of the vapor beams of the respective components should not depart from each other to an indefinite or indiscriminate extent. That is, if in the above-described example the impinging density of the As vapor beam is too much larger than the impinging density of the In vapor beam, then a mechanical effect occurs consisting in the fact that the As molecules are covered by the condensing InAs. As a result, there occur inclusions of As which may have detrimental effect upon the properties of the semiconducting layer thus pro prised by vaporization.
  • the most favorable ratio of the impinging densities of the component vapors is not always easy to control in technological application. This is particularly so if the differences in vapor pressure of the respective components are particularly great, as is the case with the above-mentioned InAs.
  • the geometric arrangement of the two vaporizer vessels relative to the recipient is so chosen that the impinging densities of the two component vapor beams vary along the recipient in mutually opposed sense. By way of example, this requirement can be satisfied by the above described arrangement illustrated on the drawing.
  • the impinging density of the vapor second and per cm.
  • the beam issuing from the vessel 1 decreases from the left toward the right relative to the eifective recipient area designated by the double-headed arrow.
  • the vapor beamissuing from the vessel 2 decreases in the opposite direction, namely from the right toward the left as far as the efifective area of the recipient is concerned.
  • This effect occurs because of the fact that the center of each vapor beam has a higher vapor density than the fringes, the center being closer to the source.
  • the entire range, designated above as the efiective area of the recipient there will now occur a partial range in which a favorable ratio of the two impinging densities of the respective vapor beams obtains. This partial range Within is subsequently-cut out of the entire area for later use of the vaporization-produced compound layer.
  • The'manufacture of vaporized layers according to the present invention is generally advantageously carried out with the following further considerations in mind.
  • the determined or selected entering density of the vapor of the less volatile component for example, of the indium in the manufacture of layers of InAs, lush and InP, or
  • the required vaporizing temperatures are determined by the vapor-pressure curves of the respective elements. For example, with indium one needs temperatures of 900 C. to 1000 C., depending upon the geometric arrangement.
  • the temperature of the vaporizer containing the more volatile component is determined by the vapor-pressure curves of the respective elements. For example, with indium one needs temperatures of 900 C. to 1000 C., depending upon the geometric arrangement.
  • arsenic or antimony is chosen so that the impinging density thereof, at the recipient, is preponderant relative to the impinging density of the less volatile component.
  • the magnitude of this excess in density may vary between about twice and ten times the impinging. For example, with arsenic, temperatures between 300 C. and 350 C. and, with antimony, temperatures between 700 C. and 800 C. are applicable.
  • the temperature of the recipient surface 3 is kept below the melting temperature of the compound to be used and also below the vaporizing temperature of the more volatile component above the compound.
  • the recipient temperature in the manufacture of InAs and GaAs, is between 200 and 700 C. In the manufacture of InSb, the recipient temperature is between 400 and 530 'C.
  • the recipient 3 is a substance whose thermal coefiicient of expansion is, as far as possible, coincident with that of the compound to be produced.
  • sintered corundum, manganese ferrite, zinc ferrite or hard glasses are suitable.
  • the layer thicknesses of the vaporization-deposited compounds generally lie between 1 micron and 5 microns.
  • the vapor-deposited layer is tempered within the vapor of the component of higher volatility at a temperature closely below the melting temperature of the compound; and the vapor pressure of the component of higher volatility is sodirnensioned or chosen as to be below the vapor pressure of the pure component of higher volatility but is higher than the corresponding vapor pressure above the stoichiometric compound at the tem-
  • the vapor pressure of the component of higher volatility is sodirnensioned or chosen as to be below the vapor pressure of the pure component of higher volatility but is higher than the corresponding vapor pressure above the stoichiometric compound at the tem-
  • the tempering temperature chosen is such that decomposition of the compound does not yet occur, nor return vaporization of the low-volatile component out of the layer. Detrimental gases or vapors are absent.
  • the tempering is performed between 500 and 530 C. in an antimony atmosphere of 10- mm. Hg.
  • the semiconductor is a semiconductor compound taken from the group consisting of boron nitride, boron phosphide, boron arsenide,
  • a method for producing a semiconductor layer of a semiconducting compound whose components, in molten condition, have difierent vapor pressures respectively comprising simultaneously directing vapor beams of the components onto a carrier surface, the carrier surface the impinging density, namely molecules per square centimeter of carrier surface per second, of the overlapping 'portions decreasing along the carrier toward each other.
  • the impinging density of the vapor beam of the component of higher volatility on said surface being such as to maintain at the carrier surface a stoichiometric excess of the component of higher volatility, the vapor beams comprising two peripherally overlapping beams,
  • the semiconductor i's a semiconductorcompound talcen from the group consisting of boron nitride, boron phosphide, boron arsenide, aluminum nitride, aluminum arsenide, aluminum antimonide, gallium nitride, gallium phosphide, gallium arsenide, gallium antimonide, indium nitride, indium phosphide, indium arsenide, and indium antimonide, of the respective formulas BN, BP, BAs, AlN, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, and InSb.
  • a method for producing a thin semiconductor layer of a semiconducting stoichiometric compound whose components, in molten condition, have diiferent vapor pressures respectively comprising simultaneously directing vapor beams of the components onto a carrier surface, the carrier surface being at a temperature between the condensing temperature of the component of higher volatility, on the one hand, and the condensing temperatures of the component of lower volatility and of the compound on the other hand, the impinging density of the vapor beam of the component of higher volatility on said surface being such as to maintain at the carrier surface a stoichiometric excess of the component of higher volatility, and tempering the vaporization-deposited layer in the vapor of the component of high volatility at a temperature close to but below the melting temperature of the compound, the vapor pressure of the component of higher volatility, in the tempering, being lower than the vapor pressure of the pure component of higher volatility but higher than the vapor pressure of this component above the stoichiometric compound at the tempering temperature.
  • a method for producing a thin semiconductor layer of a binary semiconducting compound Whose component elements, in molten condition, have diiferent vapor pressures respectively comprising simultaneously directing two partially overlapping diverging vapor beams of the components onto a carrier surface, the carrier surface being at a temperature between the condensing temperature of the component element of higher volatility, on the one hand, and the condensing temperatures of the component element of lower volatility and of the compound on the other hand.
  • a method for producing a thin semiconductor layer of indium arsenide of the formula InAs comprising simultaneously directing two diverging vapor beams, of arsenic and indium respectively, onto a carrier surface, the beams partially overlapping thereon, the carrier surface being at a temperature above the condensing temperature of the arsenic and below the condensing temperatures of the indium and of the said indium arsenide compound, the impinging density of the vapor beam of the arsenic on said surface being such as to maintain at the carrier surface a stoichiometric excess of the arsenic, and subsequently cutting out, for use in semiconductor devices, at least part of only the area of the carrier surface impinged by the overlapping portions of the beam.
  • a method for producing a thin semiconductor layer of indium antimonide of the formula InSb comprising simultaneously directing two diverging vapor beams, of antimony and indium respectively, onto a carrier surface, the beams partially overlapping thereon, the carrier surface being at a temperature above the condensing temperature of the antimony and below the condensing temperatures of the indium and of the said indium antimonide compound, the impinging density of the vapor beam of the antimony on said surface being such as to maintain at the carrier surface a stoichiometric excess of the antimony, and subsequently cutting out, for use in semiconductor devices, at least part of only the area of the carrier surface impinged by the overlapping portions of the beam.
  • a method for producing a thin semiconductor la er of indium phosphide of the formula InP comprising simultaneously directing two diverging vapor beams, of phosphorus and indium respectively, onto a carrier surface, the beams partially overlapping thereon, the carrier surface being at a temperature above the condensing temperature of the phosphorus and below the condensing temperatures of the indium and of the said indium phosphide compound, the impinging density of the vapor beam of the phosphorus on said surface being such as to maintain at the carrier surface a stoichiometric excess of the phosphorus, and subsequently cutting out, for use in semiconductor devices, at least part of only the area of the carrier surface impinged by the overlapping portions of the beam.
  • a method for producing a thin semiconductor lay er of gallium arsenide of the formula GaAs comprising simultaneously directing two diverging vapor beams, of arsenic and gallium respectively, onto a carrier surface, the beams partially overlapping thereon, the carrier surface being at a temperature above the condensing temperature of the arsenic and below the condensing temperatures of the gallium and of the said gallium arsenide compound, the impinging density of the vapor beam of the arsenic on said surface being such as to maintain at the carrier surface a stoichiometric excess'of the arsenic, and subsequently cutting out, for use in semiconductor devices, at least part of only the area of the carrier surface impinged by the overlapping portions of the beam.
  • a method for producing a thin semiconductor layer of gallium phosphite of the formula GaP comprising simultaneously directing two diverging vapor beams of phosphorus and gallium respectively, onto a carrier surface, the beams partially overlapping thereon, the carrier surface being at a temperature above the condensing temperature of the phosphorus and below the condensing temperatures of the gallium and of the said gallium phosphide compound, the impinging density of the vapor beam of the phosphorus on said surface being such as to maintain at the carrier surface a stoichiometric excess of the phosphorus, and subsequently cutting out, for use in semiconductor devices, at least part of only the area of the carrier surface impinged by the overlapping portions of the beam.
  • a method for producing a thin semiconductor layer of a semiconducting compound whose components, in molten condition, have different vapor pressures respectively comprising simultaneously directing vapor beams of the components onto a carrier surface, the carrier surface being at a temperature between the condensing temperature of the component of higher volatility, on the one hand, and the condensing temperatures of the component of lower volatility and of the compound on the other hand, the impinging density of the vapor beam of the component of higher volatility on said surface being such as to maintain at the carrier surface a stoichiometric excess of the component of higher volatility, and tempering the vaporization-deposited layer in the vapor of the component of high volatility at a temperature below the melting temperature of the compound.
  • a method for producing a thin semiconductor layer of the compound indium arsenide, of the molecular formula InAs comprising simultaneously directing at least partially overlapping diverging vapor beams of arsenic and indium onto a carrier surface, the carrier surface being at a temperature between the condensing temperature of the arsenic vapor, on the one hand, and the condensing temperatures of the indium vapor and of the said compound, on the other hand, the impinging density of the vapor beam of the arsenic on said surface being such as to provide at the carrier surface a stoichiometric excess of said arsenic, said carrier temperature being 200 to 700 C.
  • a method for producing a thin semiconductor layer of indium antimonide of the molecular formula InSb comprising simultaneously directing two diverging vapor beams, of antimony and indium, respectively, onto a carrier surface, the beams at least partially overlapping thereon, the carrier surface being at a temperature above the condensing temperature of the antimony vapor and below the condensing temperatures of the indium vapor and of the said. indium antimonide compound, the impinging density of theivapor beam of the antimony on said surface being suchlas to maintain at the carrier surface a stoichiometric excess of the antimony, the carrier temperature being about 400 to 530 C.
  • the condensing temperatures of the indium vapor and of the said compound on the other hand, the impinging density of the vapor beam of the arsenic on said surface being such as to provide at the carrier surface a stoichiometric excess of said arsenic, said carrier temperature being 200 to 700 C., and thereafter tempering the layer in an atmosphere of arsenic vapor at a temperature close to'jbut below the melting temperature of the indium arsenide, ;the arsenic-vapor in the tempering beingat a vapor pressure lower than the vaporj pressure of arsenic at the tempering temperaturqbut-higher than the vapor pressure of arsenic above'indium arsenide at said temperature. a 7 I 22.
  • a method for producing a thin semiconductor layer of indium antimonide of the molecular formula InSb comprising simultaneouslydirecting two diverging vapor vbeams, of antimony and indium, respectively, onto a carrier surface, the beams at least partially overlapping there- ,on,1the carrier surface being at a temperature above the condensing temperature of the antimony vapor and below the condensing temperaturesof the indium vapor and of the said'indium antimonide compound, the impinging'density of the vapor beam of the antimony on said surface being such as to maintain at the carrier surface a stoichiomet- .ric excess of the antimony, the carrier temperature being about v400" to 530 C., and thereafter tempering the layer inan atmosphere of antimony vapor at a temperature close to but below the melting temperature of the indium antimonide, the antimony vapor in the tempering being at a vapor pressure lower than the vapor pressure of antimony at the tempering temperature, but higher than the vapor pressure ofantimony above

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US739577A 1957-06-08 1958-06-03 Vaporization method of producing thin layers of semiconducting compounds Expired - Lifetime US2938816A (en)

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DES53828A DE1033335B (de) 1957-06-08 1957-06-08 Verfahren zum Herstellen duenner halbleitender Schichten aus halbleitenden Verbindungen

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Cited By (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3082124A (en) * 1959-08-03 1963-03-19 Beckman Instruments Inc Method of making thin layer semiconductor devices
US3094388A (en) * 1959-12-11 1963-06-18 Texas Instruments Inc Method of producing gallium or aluminum arsenides and phosphides
US3101280A (en) * 1961-04-05 1963-08-20 Ibm Method of preparing indium antimonide films
US3127226A (en) * 1960-10-04 1964-03-31 Pin-hole evaporation camera
US3129059A (en) * 1960-04-27 1964-04-14 Wacker Chemie Gmbh Process for manufacturing high purity gallium arsenide
US3152006A (en) * 1961-06-29 1964-10-06 High Temperature Materials Inc Boron nitride coating and a process of producing the same
US3211128A (en) * 1962-05-31 1965-10-12 Roy F Potter Vacuum evaporator apparatus
US3212926A (en) * 1962-05-31 1965-10-19 Gen Electric High strength fibers
US3245674A (en) * 1960-04-25 1966-04-12 Nat Res Corp Crucible coated with reaction product of aluminum and boron nitride coating
US3301637A (en) * 1962-12-27 1967-01-31 Ibm Method for the synthesis of gallium phosphide
US3341364A (en) * 1964-07-27 1967-09-12 David A Collins Preparation of thin film indium antimonide from bulk indium antimonide
US3388002A (en) * 1964-08-06 1968-06-11 Bell Telephone Labor Inc Method of forming a piezoelectric ultrasonic transducer
US3429295A (en) * 1963-09-17 1969-02-25 Nuclear Materials & Equipment Apparatus for producing vapor coated particles
US3433682A (en) * 1965-07-06 1969-03-18 American Standard Inc Silicon coated graphite
DE1297236B (de) * 1963-12-26 1969-06-12 Ibm Verfahren zum Einstellen der Steilheit von Feldeffekttransistoren
US3469978A (en) * 1965-11-30 1969-09-30 Xerox Corp Photosensitive element
US3476593A (en) * 1967-01-24 1969-11-04 Fairchild Camera Instr Co Method of forming gallium arsenide films by vacuum deposition techniques
US3480484A (en) * 1966-06-28 1969-11-25 Loral Corp Method for preparing high mobility indium antimonide thin films
US3492509A (en) * 1967-07-24 1970-01-27 Bell Telephone Labor Inc Piezoelectric ultrasonic transducers
US3520716A (en) * 1966-06-07 1970-07-14 Tokyo Shibaura Electric Co Method of vapor depositing multicomponent film
US3531335A (en) * 1966-05-09 1970-09-29 Kewanee Oil Co Method of preparing films of controlled resistivity
US3603285A (en) * 1968-11-05 1971-09-07 Massachusetts Inst Technology Vapor deposition apparatus
US3619283A (en) * 1968-09-27 1971-11-09 Ibm Method for epitaxially growing thin films
US3627573A (en) * 1966-05-16 1971-12-14 John C Schottmiller Composition and method
US3632439A (en) * 1969-04-25 1972-01-04 Westinghouse Electric Corp Method of forming thin insulating films particularly for piezoelectric transducer
US3865625A (en) * 1972-10-13 1975-02-11 Bell Telephone Labor Inc Molecular beam epitaxy shadowing technique for fabricating dielectric optical waveguides
US3990084A (en) * 1973-11-26 1976-11-02 Robert Bosch G.M.B.H. Information carrier
US3991163A (en) * 1973-04-09 1976-11-09 Siemens Aktiengesellschaft Process for the production of III-V compounds
US3992233A (en) * 1975-03-10 1976-11-16 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Surface treatment of III-V compound crystals
US4002505A (en) * 1975-06-20 1977-01-11 Cominco Ltd. Stabilization of aluminum arsenide
US4091138A (en) * 1975-02-12 1978-05-23 Sumitomo Bakelite Company Limited Insulating film, sheet, or plate material with metallic coating and method for manufacturing same
US4094269A (en) * 1974-06-14 1978-06-13 Zlafop Pri Ban Vapor deposition apparatus for coating continuously moving substrates with layers of volatizable solid substances
US4177298A (en) * 1977-03-22 1979-12-04 Hitachi, Ltd. Method for producing an InSb thin film element
US4197814A (en) * 1977-02-12 1980-04-15 Futaba Denshi Kogyo K.K. Apparatus for forming compound semiconductor thin-films
US4217856A (en) * 1977-07-08 1980-08-19 Balzers Aktiengesellschaft Fur Hochvakuumtechnik Und Dunne Schichten Vacuum evaporation apparatus
US4238803A (en) * 1976-09-03 1980-12-09 Hitachi, Ltd. Information recording methods using lasers
US4513031A (en) * 1983-09-09 1985-04-23 Xerox Corporation Process for forming alloy layer
US4523051A (en) * 1983-09-27 1985-06-11 The Boeing Company Thin films of mixed metal compounds
US9073753B2 (en) 2010-10-26 2015-07-07 Tsinghua University Method for making hydrophilic carbon nanotube film

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3958931A (en) * 1965-03-18 1976-05-25 Ciba-Geigy Ag Wool dyeing with epihalohydrin or chloroacetamide quarternized polyglycolamine assisted dye solution
SE393967B (sv) * 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket

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US2759861A (en) * 1954-09-22 1956-08-21 Bell Telephone Labor Inc Process of making photoconductive compounds

Patent Citations (1)

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Cited By (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3082124A (en) * 1959-08-03 1963-03-19 Beckman Instruments Inc Method of making thin layer semiconductor devices
US3094388A (en) * 1959-12-11 1963-06-18 Texas Instruments Inc Method of producing gallium or aluminum arsenides and phosphides
US3245674A (en) * 1960-04-25 1966-04-12 Nat Res Corp Crucible coated with reaction product of aluminum and boron nitride coating
US3129059A (en) * 1960-04-27 1964-04-14 Wacker Chemie Gmbh Process for manufacturing high purity gallium arsenide
US3127226A (en) * 1960-10-04 1964-03-31 Pin-hole evaporation camera
US3101280A (en) * 1961-04-05 1963-08-20 Ibm Method of preparing indium antimonide films
US3152006A (en) * 1961-06-29 1964-10-06 High Temperature Materials Inc Boron nitride coating and a process of producing the same
US3211128A (en) * 1962-05-31 1965-10-12 Roy F Potter Vacuum evaporator apparatus
US3212926A (en) * 1962-05-31 1965-10-19 Gen Electric High strength fibers
US3301637A (en) * 1962-12-27 1967-01-31 Ibm Method for the synthesis of gallium phosphide
US3429295A (en) * 1963-09-17 1969-02-25 Nuclear Materials & Equipment Apparatus for producing vapor coated particles
DE1297236B (de) * 1963-12-26 1969-06-12 Ibm Verfahren zum Einstellen der Steilheit von Feldeffekttransistoren
US3341364A (en) * 1964-07-27 1967-09-12 David A Collins Preparation of thin film indium antimonide from bulk indium antimonide
US3388002A (en) * 1964-08-06 1968-06-11 Bell Telephone Labor Inc Method of forming a piezoelectric ultrasonic transducer
US3433682A (en) * 1965-07-06 1969-03-18 American Standard Inc Silicon coated graphite
US3469978A (en) * 1965-11-30 1969-09-30 Xerox Corp Photosensitive element
US3531335A (en) * 1966-05-09 1970-09-29 Kewanee Oil Co Method of preparing films of controlled resistivity
US3627573A (en) * 1966-05-16 1971-12-14 John C Schottmiller Composition and method
US3874917A (en) * 1966-05-16 1975-04-01 Xerox Corp Method of forming vitreous semiconductors by vapor depositing bismuth and selenium
US3520716A (en) * 1966-06-07 1970-07-14 Tokyo Shibaura Electric Co Method of vapor depositing multicomponent film
US3480484A (en) * 1966-06-28 1969-11-25 Loral Corp Method for preparing high mobility indium antimonide thin films
US3476593A (en) * 1967-01-24 1969-11-04 Fairchild Camera Instr Co Method of forming gallium arsenide films by vacuum deposition techniques
US3492509A (en) * 1967-07-24 1970-01-27 Bell Telephone Labor Inc Piezoelectric ultrasonic transducers
US3619283A (en) * 1968-09-27 1971-11-09 Ibm Method for epitaxially growing thin films
US3603285A (en) * 1968-11-05 1971-09-07 Massachusetts Inst Technology Vapor deposition apparatus
US3632439A (en) * 1969-04-25 1972-01-04 Westinghouse Electric Corp Method of forming thin insulating films particularly for piezoelectric transducer
US3865625A (en) * 1972-10-13 1975-02-11 Bell Telephone Labor Inc Molecular beam epitaxy shadowing technique for fabricating dielectric optical waveguides
US3991163A (en) * 1973-04-09 1976-11-09 Siemens Aktiengesellschaft Process for the production of III-V compounds
US3990084A (en) * 1973-11-26 1976-11-02 Robert Bosch G.M.B.H. Information carrier
US4094269A (en) * 1974-06-14 1978-06-13 Zlafop Pri Ban Vapor deposition apparatus for coating continuously moving substrates with layers of volatizable solid substances
US4091138A (en) * 1975-02-12 1978-05-23 Sumitomo Bakelite Company Limited Insulating film, sheet, or plate material with metallic coating and method for manufacturing same
US3992233A (en) * 1975-03-10 1976-11-16 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Surface treatment of III-V compound crystals
US4002505A (en) * 1975-06-20 1977-01-11 Cominco Ltd. Stabilization of aluminum arsenide
US4238803A (en) * 1976-09-03 1980-12-09 Hitachi, Ltd. Information recording methods using lasers
US4197814A (en) * 1977-02-12 1980-04-15 Futaba Denshi Kogyo K.K. Apparatus for forming compound semiconductor thin-films
US4177298A (en) * 1977-03-22 1979-12-04 Hitachi, Ltd. Method for producing an InSb thin film element
US4217856A (en) * 1977-07-08 1980-08-19 Balzers Aktiengesellschaft Fur Hochvakuumtechnik Und Dunne Schichten Vacuum evaporation apparatus
US4513031A (en) * 1983-09-09 1985-04-23 Xerox Corporation Process for forming alloy layer
US4523051A (en) * 1983-09-27 1985-06-11 The Boeing Company Thin films of mixed metal compounds
US9073753B2 (en) 2010-10-26 2015-07-07 Tsinghua University Method for making hydrophilic carbon nanotube film

Also Published As

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NL224894A (ja)
NL103088C (ja)
DE1033335B (de) 1958-07-03
GB852598A (en) 1960-10-26
FR1194877A (fr) 1959-11-13

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