US2908594A - Sintered photoconducting photocells and methods of making them - Google Patents

Sintered photoconducting photocells and methods of making them Download PDF

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Publication number
US2908594A
US2908594A US647153A US64715357A US2908594A US 2908594 A US2908594 A US 2908594A US 647153 A US647153 A US 647153A US 64715357 A US64715357 A US 64715357A US 2908594 A US2908594 A US 2908594A
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US
United States
Prior art keywords
sintered
substrate
copper
photoconducting
photocells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US647153A
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English (en)
Inventor
George S Briggs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE565825D priority Critical patent/BE565825A/xx
Application filed by RCA Corp filed Critical RCA Corp
Priority to US647153A priority patent/US2908594A/en
Priority to JP643758A priority patent/JPS347687B1/ja
Priority to FR1193395D priority patent/FR1193395A/fr
Application granted granted Critical
Publication of US2908594A publication Critical patent/US2908594A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
US647153A 1957-03-19 1957-03-19 Sintered photoconducting photocells and methods of making them Expired - Lifetime US2908594A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
BE565825D BE565825A (pt) 1957-03-19
US647153A US2908594A (en) 1957-03-19 1957-03-19 Sintered photoconducting photocells and methods of making them
JP643758A JPS347687B1 (pt) 1957-03-19 1958-03-12
FR1193395D FR1193395A (fr) 1957-03-19 1958-03-18 Cellules photoconductrices frittées et procédé pour leur fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US647153A US2908594A (en) 1957-03-19 1957-03-19 Sintered photoconducting photocells and methods of making them

Publications (1)

Publication Number Publication Date
US2908594A true US2908594A (en) 1959-10-13

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ID=24595901

Family Applications (1)

Application Number Title Priority Date Filing Date
US647153A Expired - Lifetime US2908594A (en) 1957-03-19 1957-03-19 Sintered photoconducting photocells and methods of making them

Country Status (4)

Country Link
US (1) US2908594A (pt)
JP (1) JPS347687B1 (pt)
BE (1) BE565825A (pt)
FR (1) FR1193395A (pt)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3177576A (en) * 1961-08-15 1965-04-13 Rca Corp Method of photocell manufacture by simultaneously sintering the photosensitive material and sealing the cell
US3187414A (en) * 1959-02-05 1965-06-08 Baldwin Co D H Method of producing a photocell assembly
US3202609A (en) * 1962-01-31 1965-08-24 Ibm High mobility photoconductor sintered shapes and process for their preparation
US3238062A (en) * 1962-04-20 1966-03-01 Ibm Photoconductor preparation
US3246274A (en) * 1963-10-02 1966-04-12 Sylvania Electric Prod Photoconductive device and fabrication process
US3340427A (en) * 1964-12-28 1967-09-05 Sylvania Electric Prod Photoconductive means for detecting areas of low-level illumination
US3351516A (en) * 1962-10-13 1967-11-07 Bayer Ag Photoconductive structural element and process of manufacturing same
US3379527A (en) * 1963-09-18 1968-04-23 Xerox Corp Photoconductive insulators comprising activated sulfides, selenides, and sulfoselenides of cadmium
US3380841A (en) * 1965-02-05 1968-04-30 Hughes Aircraft Co Method of making cubic zinc sulfide with copper
US4089991A (en) * 1975-09-19 1978-05-16 Honeywell Inc. Process for applying electrical conductors for Dewar flask

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2765385A (en) * 1954-12-03 1956-10-02 Rca Corp Sintered photoconducting layers

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2765385A (en) * 1954-12-03 1956-10-02 Rca Corp Sintered photoconducting layers

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3187414A (en) * 1959-02-05 1965-06-08 Baldwin Co D H Method of producing a photocell assembly
US3177576A (en) * 1961-08-15 1965-04-13 Rca Corp Method of photocell manufacture by simultaneously sintering the photosensitive material and sealing the cell
US3202609A (en) * 1962-01-31 1965-08-24 Ibm High mobility photoconductor sintered shapes and process for their preparation
US3238062A (en) * 1962-04-20 1966-03-01 Ibm Photoconductor preparation
US3351516A (en) * 1962-10-13 1967-11-07 Bayer Ag Photoconductive structural element and process of manufacturing same
US3379527A (en) * 1963-09-18 1968-04-23 Xerox Corp Photoconductive insulators comprising activated sulfides, selenides, and sulfoselenides of cadmium
US3246274A (en) * 1963-10-02 1966-04-12 Sylvania Electric Prod Photoconductive device and fabrication process
US3340427A (en) * 1964-12-28 1967-09-05 Sylvania Electric Prod Photoconductive means for detecting areas of low-level illumination
US3380841A (en) * 1965-02-05 1968-04-30 Hughes Aircraft Co Method of making cubic zinc sulfide with copper
US4089991A (en) * 1975-09-19 1978-05-16 Honeywell Inc. Process for applying electrical conductors for Dewar flask

Also Published As

Publication number Publication date
BE565825A (pt)
JPS347687B1 (pt) 1959-09-03
FR1193395A (fr) 1959-11-02

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