JPS347687B1 - - Google Patents
Info
- Publication number
- JPS347687B1 JPS347687B1 JP643758A JP643758A JPS347687B1 JP S347687 B1 JPS347687 B1 JP S347687B1 JP 643758 A JP643758 A JP 643758A JP 643758 A JP643758 A JP 643758A JP S347687 B1 JPS347687 B1 JP S347687B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/479—Application of electric currents or fields, e.g. for electroforming
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US647153A US2908594A (en) | 1957-03-19 | 1957-03-19 | Sintered photoconducting photocells and methods of making them |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS347687B1 true JPS347687B1 (ja) | 1959-09-03 |
Family
ID=24595901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP643758A Pending JPS347687B1 (ja) | 1957-03-19 | 1958-03-12 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US2908594A (ja) |
| JP (1) | JPS347687B1 (ja) |
| BE (1) | BE565825A (ja) |
| FR (1) | FR1193395A (ja) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3187414A (en) * | 1959-02-05 | 1965-06-08 | Baldwin Co D H | Method of producing a photocell assembly |
| US3177576A (en) * | 1961-08-15 | 1965-04-13 | Rca Corp | Method of photocell manufacture by simultaneously sintering the photosensitive material and sealing the cell |
| US3202609A (en) * | 1962-01-31 | 1965-08-24 | Ibm | High mobility photoconductor sintered shapes and process for their preparation |
| US3238062A (en) * | 1962-04-20 | 1966-03-01 | Ibm | Photoconductor preparation |
| CH451338A (de) * | 1962-10-13 | 1968-05-15 | Bayer Ag | Fotoleitendes Bauelement aus Cadmiumsulfid und/oder -selenid enthaltendem Material und Verfahren zu dessen Herstellung |
| US3379527A (en) * | 1963-09-18 | 1968-04-23 | Xerox Corp | Photoconductive insulators comprising activated sulfides, selenides, and sulfoselenides of cadmium |
| US3246274A (en) * | 1963-10-02 | 1966-04-12 | Sylvania Electric Prod | Photoconductive device and fabrication process |
| US3340427A (en) * | 1964-12-28 | 1967-09-05 | Sylvania Electric Prod | Photoconductive means for detecting areas of low-level illumination |
| US3380841A (en) * | 1965-02-05 | 1968-04-30 | Hughes Aircraft Co | Method of making cubic zinc sulfide with copper |
| US4089991A (en) * | 1975-09-19 | 1978-05-16 | Honeywell Inc. | Process for applying electrical conductors for Dewar flask |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE543274A (ja) * | 1954-12-03 |
-
0
- BE BE565825D patent/BE565825A/xx unknown
-
1957
- 1957-03-19 US US647153A patent/US2908594A/en not_active Expired - Lifetime
-
1958
- 1958-03-12 JP JP643758A patent/JPS347687B1/ja active Pending
- 1958-03-18 FR FR1193395D patent/FR1193395A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| BE565825A (ja) | |
| US2908594A (en) | 1959-10-13 |
| FR1193395A (fr) | 1959-11-02 |