US2887629A - Transistor - Google Patents

Transistor Download PDF

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Publication number
US2887629A
US2887629A US639951A US63995157A US2887629A US 2887629 A US2887629 A US 2887629A US 639951 A US639951 A US 639951A US 63995157 A US63995157 A US 63995157A US 2887629 A US2887629 A US 2887629A
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US
United States
Prior art keywords
semi
transistor
envelope
conductive
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US639951A
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English (en)
Inventor
Nijland Louis Marius
Manintveld Jan Adrianus
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US Philips Corp
North American Philips Co Inc
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US Philips Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Philips Corp filed Critical US Philips Corp
Application granted granted Critical
Publication of US2887629A publication Critical patent/US2887629A/en
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Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere

Definitions

  • the invention relates to a method of producing a semi-r conductive electrode system, more particularly a transistor, in which a semi-conductive body for example of germanium or silicon is provided with at least one rectifying electrode and one ohmic connection, this structure being then etched and housed in an envelope.
  • a semi-conductive electrode system or device more particularly a transistor housed yin a vacuum-tight envelope.
  • the invention is found to be of particular use for transistors, for the purpose of increasing the current amplication factor ach, which is defined by the equation:
  • the invention has for its object to provide a method of producing a semi-conductive electrode system having a high current amplification factor and great stability. It has furthermore the advantage that the surface of the semi-conductive body can be provided in a simple manner with very thin layers, even layers of molecular thickness, producing these favourable effects.
  • the semi-conductive body with its electrode and ohmic connection is, after the etching operation, introduced into a space containing at least one of the halogens and/or their hydrates with the exception of elemental lluorine.
  • the element fluorine is excepted, since it is unserviceable owing to its great reactivity.
  • the space into which the semi-conductive body is introduced contains even a very small quantity of vapour of one or more of these elements and compounds.
  • the effect aimed at by the invention is therefore also realized if the milieu or atmosphere contains a dissociating substance capable of producing a marked vapour pressure of the halogens and/ or the hydro-halides.
  • the results obtainable by the method according to the invention are in general not dependent upon the special etching solution employed.
  • hydrochloric acid and hydro-iluoric acid are particularly suitable.
  • the eiect is further increased if the space contains, in addition, water vapour.
  • a particular embodiment of the invention consists in that the semi-conductive body with its electrode and ohmic connection is accommodated in a vacuum-tight 2,887,629 Patented May 19, ⁇ 1959 ICC body is made of silicon, since the conventional means,
  • the vacuum-tight envelope contains at least one of the halogens and/ or one of their compounds with hydrogen, with the exception of the element tluorine.
  • the envelope may furthermore contain water vapour.
  • this gaseous atmosphere atects favourably not only transistors, but will yield similar results with other semi-conductive electrode systems, when the method according to the invention is employed.
  • a transistor comprises a thin semi-conductive disc 1, provided with an emitter electrode 2, a collector electrode 3 and an ohmic annular base connection 4.
  • the electrodes 2, 3 and the ohmic connection 4 are each connected to supply conductors 5, 6, 7 passing through a glass pinch 8, and are passed to the outside through the glass base 9, to which a glass bulb 10 is sealed.
  • the envelope (9, 10) contains for instance dry HCl vapour at a pressure of about 104 mm. Hg.
  • Example 1 An alloy transistor comprising a semi-conductive body consisting of p-type silicon, provided with a base connection, consisting of an alloy of 90% by weight of indium and 10% by weight of copper, and further provided with an emitter electrode and a collector electrode, both consisting of by weight of gold and 25% by weight of antimony, was etched in a bath containing a mixture of a 52% aqueous solution of hydrouoric acid and a 97% aqueous solution of nitric acid in the volume ratio 1:3, and subsequently washed in streaming, distilled deionized Water and dried. After measurement of the current amplilication factor web. Which turned out to be 4.5, the transistor was arranged in a glass envelope containing dry HCl.
  • Example 2 A silicon alloy transistor such as described in Example l was introduced after the etching operation into a space,
  • the transistor was then introduced into a space containing dry HC1; after this treatment ach had increased to l27.
  • yExarrwle 4 An alloy transistor comprising a semi-conductive body consisting of n-type germanium, provided with ⁇ a. base electrode consisting-of an alloy vof97% by weightoftin an'd'3% by weight of antimonyfand'further ⁇ provided with an emitter 'electrode and a'collector electrode, both consisting of indium, was etched ein a bath composed of 2 volume parts 52% aqueous solution of HF, 2 volume parts 97% aqueous solution of HNO3, and 5 volume parts H2O, and subsequently washed in distilled water and dried. The current amplification vfactor amounted to 30 after this etching treatment.
  • the transistor was then sealed in a glass envelope containing HF yand water vapour. After this treatment ach had increased to 90. yDuring the subsequent heating acbrose to a value 100 at a temperature of 70 C. During the Icooling to room temperature the same range wasreversed, which confirms the stability of the transistor.
  • Example 5 An alloy transistor such as described in Example l, had a current amplification factor nach of 2.7 after the etching operation. The transistor was then introduced into an envelope containing apart from bromine vapour, water vapour. Thus agb increased to 18.5. During the subsequent heating ach increased further to obtain a value 24at 180 C. After cooling to room temperature cb decreased practically to the initial value viz. y17.5.
  • a semi-conductive device comprising an etched semiconductive body with plural lelectrode connections to said body and possessing a current amplication factor Whose value depends on the 'surrounding atmosphere, a sealed 50 envelope enclosing lthe'body with its connections, and an atmosphere in said envelope comprising water vapor and a substance selected from the group consisting of chlorine, bromine, iodine, and hydrogen compounds of the latter and of iluorine.
  • a semi-conductive device comprising an etched semiconductive body selected Afront the group consisting of germanium and silicon and with ohmic and rectifying electrode connections to said body, a vacuum-tight sealed envelope enclosing the body with its connections, and an atmosphere in said envelope comprising water vapor and a substance selected from the group consisting of chlorine, bromine, iodine and hydrogen compounds of the latter and of iluorine.
  • a semi-conductive device comprising an etched semiconductive body selected from the group consisting of germanium and silicon with ohmic and yrectifying electrode connections to said body, a vacuum-tight sealed envelope enclosing the body with ⁇ its connections, and an atmosphere in said envelope comprising a substance selected from the group consisting of hydrofluoric acid and hydrochloric acid.
  • a method manufacturing a semi-conductive device comprising a semi-conductive body and plural electrode connections to said body and possessing a current amplication factor whose value depends on the surrounding atmosphere, comprising etching the body, and thereafter introducing the body With its electrode connections into an atmosphere containing Water vapor and a substance selected from the group consisting of chlorine, bromine, iodine, and hydrogen compounds of the latter and of uorine.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
US639951A 1956-02-29 1957-02-13 Transistor Expired - Lifetime US2887629A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL350722X 1956-02-29

Publications (1)

Publication Number Publication Date
US2887629A true US2887629A (en) 1959-05-19

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ID=19785028

Family Applications (1)

Application Number Title Priority Date Filing Date
US639951A Expired - Lifetime US2887629A (en) 1956-02-29 1957-02-13 Transistor

Country Status (7)

Country Link
US (1) US2887629A (xx)
BE (1) BE555371A (xx)
CH (1) CH350722A (xx)
DE (1) DE1052573B (xx)
FR (1) FR1167318A (xx)
GB (1) GB831816A (xx)
NL (1) NL95308C (xx)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2998554A (en) * 1957-04-05 1961-08-29 Philips Corp Semi-conductor barrier layer system
US3489965A (en) * 1967-04-04 1970-01-13 Marconi Co Ltd Insulated gate field effect transistors

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3281915A (en) * 1963-04-02 1966-11-01 Rca Corp Method of fabricating a semiconductor device
DE1260445B (de) * 1965-03-08 1968-02-08 Siemens Ag Verfahren zum Eindiffundieren von gasfoermigem Dotierungsmaterial in einen Halbleiterkristall
US3556880A (en) * 1968-04-11 1971-01-19 Rca Corp Method of treating semiconductor devices to improve lifetime

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2812480A (en) * 1954-06-23 1957-11-05 Rca Corp Method of treating semi-conductor devices and devices produced thereby

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2812480A (en) * 1954-06-23 1957-11-05 Rca Corp Method of treating semi-conductor devices and devices produced thereby

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2998554A (en) * 1957-04-05 1961-08-29 Philips Corp Semi-conductor barrier layer system
US3489965A (en) * 1967-04-04 1970-01-13 Marconi Co Ltd Insulated gate field effect transistors

Also Published As

Publication number Publication date
BE555371A (xx) 1957-08-27
CH350722A (de) 1960-12-15
FR1167318A (fr) 1958-11-24
NL95308C (xx) 1960-09-15
GB831816A (en) 1960-03-30
NL205007A (xx) 1959-12-15
DE1052573B (de) 1959-03-12

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