US2858463A - Storage screen for direct-viewing storage tube - Google Patents

Storage screen for direct-viewing storage tube Download PDF

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Publication number
US2858463A
US2858463A US519384A US51938455A US2858463A US 2858463 A US2858463 A US 2858463A US 519384 A US519384 A US 519384A US 51938455 A US51938455 A US 51938455A US 2858463 A US2858463 A US 2858463A
Authority
US
United States
Prior art keywords
screen
storage
layer
viewing
dielectric material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US519384A
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English (en)
Inventor
Nobuo J Koda
Sidney T Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE548321D priority Critical patent/BE548321A/xx
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Priority to US519384A priority patent/US2858463A/en
Priority to FR1154131D priority patent/FR1154131A/fr
Priority to CH338532D priority patent/CH338532A/fr
Priority to DEH27290A priority patent/DE1035280B/de
Priority to GB20112/56A priority patent/GB813854A/en
Application granted granted Critical
Publication of US2858463A publication Critical patent/US2858463A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/395—Charge-storage screens charge-storage grids exhibiting triode effect

Definitions

  • a process for fabricating a storage screen wherein the dielectric material is disposed symmetrically about each interstice which may be circular. or square.
  • each interstice of the screen exerts the same control over the flow of flood electrons.
  • a thin layer of dielectric material is disposed ,on the central portion of each mesh of an electroformed screen.
  • the electric field from the viewing screen penetrates the interstices of the storage screen and influences the electric field immediately adjacent the layer of dielectric storage material. This is particularly true for highly transparent, coarse During the erasure process this field from the 'viewing screen causes some of the-low-velocity flood electrons to be deflected away from the storage surface, to fall into the interstices, and to ultimately strike the viewing screen. This action results in a loss of erasure electrons and contributes to the objectional bright flash on the viewing screen during erasure.
  • the layer of dielectric material due to its central location, is shielded by a maximum amount from the influence of the viewing screen field. This would eliminate the need for lowering the potential applied to the viewing screen during erasing intervals.
  • the process for fabricating a storage screen of this type comprises first evaporating a dielectric material over one side of an electroformed screen without depositing any dielectric material within the interstices thereof. This may be accomplished, for example, by the use of a material known as photo resist in a manner hereinafter explained. After the dielectric material has been evaporated on the screen, the meshes of the screen are then increased to the desired width by plating additional metal on the exposed conductive portions of the surfaces thereof.
  • Another object of the invention is to provide a storage screen capable of being more efliciently erased and having uniform control characteristics in each interstice of its entire area.
  • Still another object of the present invention is to provide a process for fabricating a storage screen having a thin layer of dielectric material disposed symmetrically over only a portion of the exposed surface on one side of the meshes of an electroformed screen.
  • Figs. 1 and 2 are plan and cross-sectional views, respectively, of an enlarged portion of the storage screen of the present invention
  • Figs. 3 and 4 are plan and cross-sectional views, respectively, of an enlarged portion of an electroformed screen; and Figs. 5 to 10 illustrate steps in the process of fabricating the storage screen shown in Figs. 1 and 2.
  • Figs. 1 and 2 show plan and cross-sectional views, respectively, of an embodiment of the storage screen of the present invention.
  • the storage screen comprises a metallic screen 10 having of the order of 250 meshes per inch, a thickness of 0.001 inch, and a transparency of approximately 40%.
  • a layer 12 of dielectric material such as, for example, magnesium fluoride.
  • layer 12 has the configuration of a dielectric screen that is disposed in register with the metallic screen 10.
  • the width of the meshes forming the dielectric screen is approximately only one-half the width of the meshes of screen 10.
  • dielectric, material is not critical and may, for example, be from 1 to micronsthick.
  • the storage screen described above is fabricated by commencing with an electroform'ed nickelscreen14 ('Fig. 2) having the requisite number of meshes per inch and a thickness of the order of 0.0006 inch;
  • the width, of the meshes of screen 14, however, is made to be substantially equal to that of the dielectric screen, formed, by the layer12.
  • the nickel screen 14 is stretched taut in a jig 16 as shown in Fig. 6.
  • the first principal step in fabricating the storage screen of the present invention is to dispose the layer" 12 of dielectric material on one side of the meshes of the nickel screen 14 without depositing any dielectric material on the inner surface of the interstices thereof.
  • Conventional evaporation techniques have been found to be unsatisfactory as some molecules of the dielectric material are deposited within the interstices of the nickel screen 14 which result in non-uniformities in the finished storage screen.
  • This step may be accomplished by first coating the entire surface of the nickel screen 14, as shown in Fig. 5, with a layer 18 of photo resist in the absence of light.
  • Photo resist may comprise, for example, a photosensitive lacquer or gelatin that is characterized by the fact that it is hardened by exposure to light.
  • the photo resist that is hardened by exposure to light may be removed by raising it to an appropriate temperature determined by its composition or by dissolving it in an appropriate chemical solution.
  • the portions of the layer 18 of photo resist on one side of the nickel screen 14 and on the inner surface of the interstices thereof are exposed to light thereby hardening these portions.
  • This exposure may be made by projecting light towards one side of the coated screen 14 at a slight angle with the normal thereto in the manner shown in Fig. 6.
  • the jig 16 in which the coated screen 14 is mounted may be rotated while being exposed so that light will be projected over the entire inner periphery of each interstice of the coated screen 14.
  • the portions of the layer 18 of photo resist exposed to the light will be hardened. These portions are indicated by theshaded areas 20 of Fig. 7.
  • the unexposed portions of layer 18 are indicated by the dotted areas 22 in the same figure.
  • the layer 18 of photo resist is then developed, i. e., the coated screen 14 is immersed in a liquid capable of dissolving the unhardened portions.
  • the dotted areas 22 of layer 18 are washed away leaving only the hardened portions 20 as shown in Fig. 8.
  • the thin layer 12 of dielectric material such as, for example, magnesium fluoride, may now be evaporated on the uncoated side of the meshes of the nickel screen 14.
  • magnesium fluoride it is desirable to heat the screen 14 to a temperature of the order of 150 to 300 C. in order to get a good bond between the magnesium fluoride and the nickel.
  • some dielectric material will be deposited on the exposed areas of the remaining hardened portions 20 as shown in Fig. 9;
  • the nickel screen 14 is placed in an appropriate medium and heated to a temperature necessary to burn the hardened portion 20 of the photo resist layer 18 off of the screen 14 or in an appropriate chemical solution to dissolve the hardened photo resist away.
  • the actual composition of the medium or chemical solution and the necessary temperature will depend on the type of photo resist employed in the process. As mentioned above, a portion of the layer 12 of dielectric material will have been disposed on top of the hardened portion 20 of photo resist layer 18 which has now been burned away. This portion of the layer 12 will thus be left unsupported.
  • the unsupported portions thereof may be broken away by agitating the screen 14 in Water or other liquid, or by blowing air over and through the screen 14.
  • the nickel screen 14 has the layer 12 of dielectric material disposed on only one side of the meshes thereof as shown in Fig. 10.
  • a coating 24 of metal (see- Figs. 1 and 2) is now electroplated on the nickel screen 14 to increase the area of conductive surfacesurrounding the dielectric.
  • the extent or amount of this plating generally represents a compromise between the percentage of conductive surface desired relative to. the area of the layer 12 of dielectric material and the ultimate transparency of the storage screen.
  • the nickelv screen 14 supported by the jig-16 is immersed in a saturated solution of electrolyte such as, for example, copper sulfate with the layer 12 facing and parallel to an anode.
  • a small direct-current voltage of the order of 1 volt is developed between the anode and the nickel screen 14. For a screen of the order of 5 inches in diameter, one
  • the nickel screen 14 is periodically rinsed with water and rotated in the plane parallel to the anode.
  • the electrolyte may also be agitated or stirred to improve the uniformity of the plating.
  • the plating operation is continued until the desired increase in the width of the meshes of the nickel screen 14. has been achieved.
  • a storage screen comprising a conductive screen, and a continuous layer of dielectric material disposed about and spaced substantially uniformly from the periphery of each interstice of said screen on one side of the meshes thereof.
  • a storage screen comprising an elcctroformed metallic screen, and a continuous layer of dielectric material having secondary electron emission characteristics disposed about and substantially uniformly spaced from the periphery of each interstice of said screen on one side of the meshes thereof, the thickness of said layer being small relative to the thickness of said screen.
  • the storage screen as defined in claim 2 wherein the area of said continuous layer of dielectric material is substantially equal to the portion of the area of said meshes remaining exposed on said one side.

Landscapes

  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
US519384A 1955-07-01 1955-07-01 Storage screen for direct-viewing storage tube Expired - Lifetime US2858463A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
BE548321D BE548321A (enrdf_load_stackoverflow) 1955-07-01
US519384A US2858463A (en) 1955-07-01 1955-07-01 Storage screen for direct-viewing storage tube
FR1154131D FR1154131A (fr) 1955-07-01 1956-05-29 écran pour tube d'emmagasinage à vision directe
CH338532D CH338532A (fr) 1955-07-01 1956-05-31 Ecran d'emmagasinage pour tube d'emmagasinage à vision directe et procédé de fabrication de cet écran
DEH27290A DE1035280B (de) 1955-07-01 1956-06-13 Bildspeicherschirm fuer Braunsche Roehren und Verfahren zur Herstellung des Speicherschirmes
GB20112/56A GB813854A (en) 1955-07-01 1956-06-28 Screen for direct-viewing storage tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US519384A US2858463A (en) 1955-07-01 1955-07-01 Storage screen for direct-viewing storage tube

Publications (1)

Publication Number Publication Date
US2858463A true US2858463A (en) 1958-10-28

Family

ID=24068081

Family Applications (1)

Application Number Title Priority Date Filing Date
US519384A Expired - Lifetime US2858463A (en) 1955-07-01 1955-07-01 Storage screen for direct-viewing storage tube

Country Status (6)

Country Link
US (1) US2858463A (enrdf_load_stackoverflow)
BE (1) BE548321A (enrdf_load_stackoverflow)
CH (1) CH338532A (enrdf_load_stackoverflow)
DE (1) DE1035280B (enrdf_load_stackoverflow)
FR (1) FR1154131A (enrdf_load_stackoverflow)
GB (1) GB813854A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2978389A (en) * 1958-03-07 1961-04-04 Philips Corp Method of tensioning thin meshes of metal
US3089050A (en) * 1959-02-26 1963-05-07 Hughes Aircraft Co Storage target
US3448281A (en) * 1965-07-07 1969-06-03 Westinghouse Electric Corp Apparatus for performing image correlation
US3659098A (en) * 1969-06-28 1972-04-25 Siemens Ag Arrangement for facilitating adjustment of the electronic beam of an electronic-beam microanalyzer and method of producing same
US3878063A (en) * 1971-12-15 1975-04-15 Raytheon Co Method for making a thin film dielectric storage target
USD246470S (en) * 1975-12-29 1977-11-22 Mitsuru Sato Building block
US20080119363A1 (en) * 2005-01-17 2008-05-22 Centre National De La Recherche Scientifque Use of Superconductor Components in Thin Layers as Variable Inductance and Devices Including Said Components and Corresponding Control Method
CN103361680A (zh) * 2012-04-10 2013-10-23 昆山允升吉光电科技有限公司 电铸平面丝网

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2156435A (en) * 1935-10-03 1939-05-02 Telefunken Gmbh Cathode ray tube
US2287415A (en) * 1939-12-15 1942-06-23 Rca Corp Cathode ray signal generator
US2539422A (en) * 1947-07-23 1951-01-30 Ward Baking Co Lubricating oil
US2682501A (en) * 1948-12-29 1954-06-29 Bell Telephone Labor Inc Preparation of two-sided mosaic
US2685660A (en) * 1951-04-07 1954-08-03 Gen Electric Television tube
US2754449A (en) * 1950-11-25 1956-07-10 Itt Cathode ray tube and system

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2687492A (en) * 1949-06-16 1954-08-24 Rauland Corp Signal storage device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2156435A (en) * 1935-10-03 1939-05-02 Telefunken Gmbh Cathode ray tube
US2287415A (en) * 1939-12-15 1942-06-23 Rca Corp Cathode ray signal generator
US2539422A (en) * 1947-07-23 1951-01-30 Ward Baking Co Lubricating oil
US2682501A (en) * 1948-12-29 1954-06-29 Bell Telephone Labor Inc Preparation of two-sided mosaic
US2754449A (en) * 1950-11-25 1956-07-10 Itt Cathode ray tube and system
US2685660A (en) * 1951-04-07 1954-08-03 Gen Electric Television tube

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2978389A (en) * 1958-03-07 1961-04-04 Philips Corp Method of tensioning thin meshes of metal
US3089050A (en) * 1959-02-26 1963-05-07 Hughes Aircraft Co Storage target
US3448281A (en) * 1965-07-07 1969-06-03 Westinghouse Electric Corp Apparatus for performing image correlation
US3659098A (en) * 1969-06-28 1972-04-25 Siemens Ag Arrangement for facilitating adjustment of the electronic beam of an electronic-beam microanalyzer and method of producing same
US3878063A (en) * 1971-12-15 1975-04-15 Raytheon Co Method for making a thin film dielectric storage target
USD246470S (en) * 1975-12-29 1977-11-22 Mitsuru Sato Building block
US20080119363A1 (en) * 2005-01-17 2008-05-22 Centre National De La Recherche Scientifque Use of Superconductor Components in Thin Layers as Variable Inductance and Devices Including Said Components and Corresponding Control Method
US8126523B2 (en) 2005-01-17 2012-02-28 Centre National De La Recherche Scientifique Use of superconductor components in thin layers as variable inductance and devices including said components and corresponding control method
CN103361680A (zh) * 2012-04-10 2013-10-23 昆山允升吉光电科技有限公司 电铸平面丝网
CN103361680B (zh) * 2012-04-10 2017-06-06 昆山允升吉光电科技有限公司 电铸平面丝网

Also Published As

Publication number Publication date
BE548321A (enrdf_load_stackoverflow)
GB813854A (en) 1959-05-27
FR1154131A (fr) 1958-04-02
DE1035280B (de) 1958-07-31
CH338532A (fr) 1959-05-31

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