US2827599A - Transistor - Google Patents
Transistor Download PDFInfo
- Publication number
- US2827599A US2827599A US424173A US42417354A US2827599A US 2827599 A US2827599 A US 2827599A US 424173 A US424173 A US 424173A US 42417354 A US42417354 A US 42417354A US 2827599 A US2827599 A US 2827599A
- Authority
- US
- United States
- Prior art keywords
- collector
- emitter
- transistor
- semi
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 241001307210 Pene Species 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Medicines Containing Material From Animals Or Micro-Organisms (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL178034 | 1953-05-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
US2827599A true US2827599A (en) | 1958-03-18 |
Family
ID=19750606
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US424173A Expired - Lifetime US2827599A (en) | 1953-05-01 | 1954-04-19 | Transistor |
Country Status (6)
Country | Link |
---|---|
US (1) | US2827599A (xx) |
BE (1) | BE527382A (xx) |
DE (1) | DE1770266U (xx) |
FR (1) | FR1099770A (xx) |
GB (1) | GB783520A (xx) |
NL (1) | NL85504C (xx) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2929006A (en) * | 1954-12-02 | 1960-03-15 | Siemens Ag | Junction transistor |
US2959718A (en) * | 1957-04-08 | 1960-11-08 | Int Rectifier Corp | Rectifier assembly |
US3063129A (en) * | 1956-08-08 | 1962-11-13 | Bendix Corp | Transistor |
US3312879A (en) * | 1964-07-29 | 1967-04-04 | North American Aviation Inc | Semiconductor structure including opposite conductivity segments |
US3443173A (en) * | 1966-05-17 | 1969-05-06 | Sprague Electric Co | Narrow emitter lateral transistor |
US3579059A (en) * | 1968-03-11 | 1971-05-18 | Nat Semiconductor Corp | Multiple collector lateral transistor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2629672A (en) * | 1949-07-07 | 1953-02-24 | Bell Telephone Labor Inc | Method of making semiconductive translating devices |
US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
-
0
- NL NL85504D patent/NL85504C/xx active
- BE BE527382D patent/BE527382A/xx unknown
-
1954
- 1954-04-19 US US424173A patent/US2827599A/en not_active Expired - Lifetime
- 1954-04-28 GB GB12319/54A patent/GB783520A/en not_active Expired
- 1954-04-28 DE DEN4154U patent/DE1770266U/de not_active Expired
- 1954-04-29 FR FR1099770D patent/FR1099770A/fr not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
US2629672A (en) * | 1949-07-07 | 1953-02-24 | Bell Telephone Labor Inc | Method of making semiconductive translating devices |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2929006A (en) * | 1954-12-02 | 1960-03-15 | Siemens Ag | Junction transistor |
US3063129A (en) * | 1956-08-08 | 1962-11-13 | Bendix Corp | Transistor |
US2959718A (en) * | 1957-04-08 | 1960-11-08 | Int Rectifier Corp | Rectifier assembly |
US3312879A (en) * | 1964-07-29 | 1967-04-04 | North American Aviation Inc | Semiconductor structure including opposite conductivity segments |
US3443173A (en) * | 1966-05-17 | 1969-05-06 | Sprague Electric Co | Narrow emitter lateral transistor |
US3579059A (en) * | 1968-03-11 | 1971-05-18 | Nat Semiconductor Corp | Multiple collector lateral transistor device |
Also Published As
Publication number | Publication date |
---|---|
NL85504C (xx) | |
GB783520A (en) | 1957-09-25 |
BE527382A (xx) | |
FR1099770A (fr) | 1955-09-09 |
DE1770266U (de) | 1958-07-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US2721965A (en) | Power transistor | |
US3387190A (en) | High frequency power transistor having electrodes forming transmission lines | |
US4127863A (en) | Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast | |
US3204160A (en) | Surface-potential controlled semiconductor device | |
US3021461A (en) | Semiconductor device | |
US3476989A (en) | Controlled rectifier semiconductor device | |
US4786959A (en) | Gate turn-off thyristor | |
US3239728A (en) | Semiconductor switch | |
US3114867A (en) | Unipolar transistors and assemblies therefor | |
US3631310A (en) | Insulated gate field effect transistors | |
US3234441A (en) | Junction transistor | |
US3593068A (en) | Bus bar transistor and method of making same | |
US2953693A (en) | Semiconductor diode | |
US2827599A (en) | Transistor | |
US3040218A (en) | Constant current devices | |
US4243999A (en) | Gate turn-off thyristor | |
EP0064231B1 (en) | Compression-type semiconductor device | |
US2975344A (en) | Semiconductor field effect device | |
US2717343A (en) | P-n junction transistor | |
US5130784A (en) | Semiconductor device including a metallic conductor for preventing arcing upon failure | |
US3918080A (en) | Multiemitter transistor with continuous ballast resistor | |
DE4011275A1 (de) | Halbleiterbauelement | |
US2862115A (en) | Semiconductor circuit controlling devices | |
US2714183A (en) | Semi-conductor p-n junction units and method of making the same | |
US3796931A (en) | P-n junction semiconductor device provided with an insulating layer having two stable resistance states |