US2827599A - Transistor - Google Patents
Transistor Download PDFInfo
- Publication number
- US2827599A US2827599A US424173A US42417354A US2827599A US 2827599 A US2827599 A US 2827599A US 424173 A US424173 A US 424173A US 42417354 A US42417354 A US 42417354A US 2827599 A US2827599 A US 2827599A
- Authority
- US
- United States
- Prior art keywords
- collector
- emitter
- transistor
- semi
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 241001307210 Pene Species 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- This invention releates to transistors comprising a semiconductive member having secured to it one base and at least two other electrodes, that is to say at least one emitter and one collector. Barrier layers or rectifying junctions are provided between the member and the emitter or collector terminals, but in general, such a barrier is not provided between the member and the base. Said member is usually a monocrystal.
- the ratio of said variations is the current amplification factor This factor should preferably be as large as possible.
- the invention has inter alia for its object to increase the current amplification factor, particularly at high values of 1 and 1,. It is based on the recognition that under given conditions a considerable part of the current supplied by the emitter may flow to the base and does not contribute to influencing the collector current.
- the invention provides means for considerably reducing said loss.
- the invention permits of reducing the so-called saturation current in the collector circuit, that is to say the collector current at an emitter current equal to zero and at a constant collector voltage.
- the semi-conductive member comprises at least one insulating part whereof the surface at least partly adjoins an emitter or a collector. That is, a nonconductive region is interposed between the emitter or collector and the base electrode.
- Such an insulating part preferably consists of a cavity in the semi-conductive member, for example a bore or a sawcut.
- the emitter and collector, or plural emitters and collectors, as the case may be, are preferably of the diffusion type, which may, for example, be obtained by fusing given metals onto the semi-conductive member.
- the emitters and collectors which have a comparatively large surface, and which are sometimes referred to as broad area rectifying connections, frequently possess parts which do not contribute to the chiciency of the transistor.
- the invention is of particular importance for transistors of comparatively high power, whose emitter and collector have a large surface and are alternately juxtaposed on the semi-conductive member.
- Fig. 1 is a sectional view of a transistor comprising one emitter and one collector.
- Fig. 2 is a sectional view of a transistor comprising a number of such emitters and collectors.
- Figures 3 and 5 are perspective views of a semi-conductive member and Figures 4, 4a, 6 and 7 are sectional views of transistors made by means of said member.
- the transistor shown in Fig. 1 comprises a semi-conductive member or body 1, for example consisting of a mono-crystal of n-type germanium, which is soldered to a base 2, which thus constitutes a base ohmic connection to the body 1.
- This member 1 has secured to it an emitter 3 and a collector 4, both of which may consist of a quantity of indium fused onto the body. in this manner the underlying germanium is locally converted into p-type germanium at the two regions indicated by reference numeral 5, as indicated by double cross-hatching, barriers or rectifying junctions being situated at the limiting surfaces of these opposite types of germanium.
- An insulating part or non-conductive region in the form of a cavity 6 is situated beneath the emitter 3 and thus between the latter and the adjacent ptype region 5, and the base connection 2.
- a part '7 of the surface of the emitter 3 is made inactive with the effect that the remaining active surface influences the collector 4 to a relatively higher degree.
- a part of the contact surface of the emitter 3 and the semi-conductive member 1, which part is situated at the left of the cavity 6, still provides emitter current which does not practically affect the collector.
- FIG. 2 shows a transistor comprising two emitters 3 and three collectors 4. Beneath each emitter and each collector are provided cavities 6 so that all surface parts of the emitters, which contact with the semi-conductive member, face a collector, and the current passing through the emitters (to be connected in parallel) is able to exert a comparatively strong influence on the current passing through the collectors (also to be connected in parallel). Furthermore, the active surfaces of the collectors mainly face the emitters, thus avoiding as much as possible a direct current path from the collectors to the base and reducing the saturation current of the collector.
- the shape of the insulating or non-conductive parts will partly depend upon the properties of the semi-conductive material.
- this material is germanium it may, for example, be processed by sawing or drilling.
- a number of parallel slots 3, as shown in Fig. 3, may be provided by sawing in the surface of the semi-conductive member remote from the base.
- the upper part of said slots is filled with longitudinal indium strips 9.
- this indium metal will fuse together with the germanium and partly difiuse into it to produce the regions of opposite conductivity type to that of the member 1 (Fig. 4).
- the bottom of said slots may be covered with insulating material 14, for example SiO as shown in Fig. 4a.
- FIGs 5 to 7 show another embodiment in which openings 11 are drilled in a fiat semi-conductive member 10 (Fig. 5). Said openings may either extend to the base 2, as shown in Fig. 6 or through said base as shown in Fig. 7. Into each opening a drop of indium is melted, which drops may be alternately connected as emitter and collector respectively.
- preferred constructions comprise insulating parts in the form of cavities which extend to the outer surface of the member as shown in Fig. 7 and consequently not those shown in Fig. 6.
- the etching liquid is allowedto pene' trate into the cavities.
- a transistor comprising a semi-conductive member of one conductivity type, a base ohmic connection to said member, a pair of spaced regions in said member of the opposite conductivity type, and emitter-and collector terminal connections to said regions, said member containing anon-conductive region located between at least one ,of said regions of the opposite conductivity type and said of one conductivity type, a base ohmic connection to one 3 surface of said member, and a plurality of broad area rectifying connections to another surface of said member, said member containing at least one non-conducting portion disposed underneath one of said broad area rectifying connections and between the latter and the base connection. 7 a
- a transistor comprising a semi-conductive member of one conductivity type, a base ohmic connection to one surface of said member, and at least three broad area rec-'- tifying connections to another surface of said member, said member containing at least one non-conducting por 7 tion disposed underneath one of said broad ar a rectifying connections and between the latter and the base connec- 'one electrode.
- a transistor as set forth 'in claim 8 wherein the rectifying connections have an elongated form and extend approximately parallel, to one, another.
- a transistor comprising a semi-conductive body having ;a groove of given width in one surface thereof defining anon-conducting portion in said body, emitter and collector electrodes connected in spaced relationship 7 to said body, at least one of said electrodes being constituted-by a metallic body having a width greater than.
- said given width disposed over said groove in contact With andxliffused into adjacent surfaces thereof, the bottom of said groove remaining free of conductive material, and a base electrode secured toca surface of said semi-conductive body opposite said one'surface.
- a transistor comprising a' semi-conductive body having a cylindrical bore of given diameter extending through said body and defining in said body a non-conducting portion, emitter and collector electrodes con nected in spaced relationship to said body, one of said electrodes being constitutedby a metallic body having at least one dimension greater than said given diameter and disposed over one end of said bore in contact With'and difiu'sed into surface portions of said body surrounding said bore, the bottom of said bore remaining free of con ductive material, and a base electrode secured to a sur-P face of 'said'semi-conductive body opposite from said 12.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Medicines Containing Material From Animals Or Micro-Organisms (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL178034 | 1953-05-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
US2827599A true US2827599A (en) | 1958-03-18 |
Family
ID=19750606
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US424173A Expired - Lifetime US2827599A (en) | 1953-05-01 | 1954-04-19 | Transistor |
Country Status (6)
Country | Link |
---|---|
US (1) | US2827599A (de) |
BE (1) | BE527382A (de) |
DE (1) | DE1770266U (de) |
FR (1) | FR1099770A (de) |
GB (1) | GB783520A (de) |
NL (1) | NL85504C (de) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2929006A (en) * | 1954-12-02 | 1960-03-15 | Siemens Ag | Junction transistor |
US2959718A (en) * | 1957-04-08 | 1960-11-08 | Int Rectifier Corp | Rectifier assembly |
US3063129A (en) * | 1956-08-08 | 1962-11-13 | Bendix Corp | Transistor |
US3312879A (en) * | 1964-07-29 | 1967-04-04 | North American Aviation Inc | Semiconductor structure including opposite conductivity segments |
US3443173A (en) * | 1966-05-17 | 1969-05-06 | Sprague Electric Co | Narrow emitter lateral transistor |
US3579059A (en) * | 1968-03-11 | 1971-05-18 | Nat Semiconductor Corp | Multiple collector lateral transistor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2629672A (en) * | 1949-07-07 | 1953-02-24 | Bell Telephone Labor Inc | Method of making semiconductive translating devices |
US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
-
0
- BE BE527382D patent/BE527382A/xx unknown
- NL NL85504D patent/NL85504C/xx active
-
1954
- 1954-04-19 US US424173A patent/US2827599A/en not_active Expired - Lifetime
- 1954-04-28 DE DEN4154U patent/DE1770266U/de not_active Expired
- 1954-04-28 GB GB12319/54A patent/GB783520A/en not_active Expired
- 1954-04-29 FR FR1099770D patent/FR1099770A/fr not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
US2629672A (en) * | 1949-07-07 | 1953-02-24 | Bell Telephone Labor Inc | Method of making semiconductive translating devices |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2929006A (en) * | 1954-12-02 | 1960-03-15 | Siemens Ag | Junction transistor |
US3063129A (en) * | 1956-08-08 | 1962-11-13 | Bendix Corp | Transistor |
US2959718A (en) * | 1957-04-08 | 1960-11-08 | Int Rectifier Corp | Rectifier assembly |
US3312879A (en) * | 1964-07-29 | 1967-04-04 | North American Aviation Inc | Semiconductor structure including opposite conductivity segments |
US3443173A (en) * | 1966-05-17 | 1969-05-06 | Sprague Electric Co | Narrow emitter lateral transistor |
US3579059A (en) * | 1968-03-11 | 1971-05-18 | Nat Semiconductor Corp | Multiple collector lateral transistor device |
Also Published As
Publication number | Publication date |
---|---|
FR1099770A (fr) | 1955-09-09 |
GB783520A (en) | 1957-09-25 |
BE527382A (de) | |
DE1770266U (de) | 1958-07-17 |
NL85504C (de) |
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