US2805369A - Semi-conductor electrode system - Google Patents
Semi-conductor electrode system Download PDFInfo
- Publication number
- US2805369A US2805369A US374209A US37420953A US2805369A US 2805369 A US2805369 A US 2805369A US 374209 A US374209 A US 374209A US 37420953 A US37420953 A US 37420953A US 2805369 A US2805369 A US 2805369A
- Authority
- US
- United States
- Prior art keywords
- semi
- electrode system
- impurities
- electrode
- conductor electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 239000012535 impurity Substances 0.000 claims description 10
- 239000004020 conductor Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910000604 Ferrochrome Inorganic materials 0.000 description 1
- 101100400378 Mus musculus Marveld2 gene Proteins 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Definitions
- the invention relates to semi-conductors, and, in particular, to electrode systems for granular semi-conductors, such as crystal diodes or transistors.
- a known method of manufacturing granular semiconducting bodies results in a more or less egg-shaped body, the narrow top of which has a much higher concentration of impurities than the wider lower portion, that is to say, the impurities in the semi-conducting body which adversely affect its elec tric properties, for example, its rectifying properties, are lumped in the top of the body or grain.
- British Patent No. 683,248 it has been proposed to mount the eggshaped body with the top projecting outwardly from the metallic support and to remove the top with its undesirable impurities to form a contact surface.
- the present invention is based on the discovery that it is possible to take advantage of the presence of these undesirable impurities by securing the narrow top of the body to a base electrode, since a rectifying junction at this area is undesirable.
- the electrode system according to the invention therefore, comprises an egg-shaped semiconducting body, the narrow end of which has a higher concentration of impurities than the wider end.
- a good electrical ohmic connection is effected to the narrow end, i. e., it is secured to a base electrode, and the wider end is flattened, e. g., by grinding, for the purpose of effecting a rectifying connection thereto.
- the advantage of the construction according to the invention is that, not only are the impurities in the semiconductor arranged in a zone in which they are not harmful, but their presence is actually utilized to reduce the contact resistance to the base. It is preferred that the flattened, wider part of the egg-shaped body contains no impurities, i. e., it consists solely of pure semi-conducting material, since this reduces the risk that this surface may become contaminated.
- the electrode system of the invention comprises a rod-shaped base electrode 1 provided with a supply conductor 2 and having a granular semi-conducting body 3 secured to it by means of solder 4.
- the body is egg-shaped and has its head on the top portion 5 adjacent the base 1. Its wider upper end 6 is flattened, for example, by grinding, at 7.
- the higher concentration of impurities in the head 5 is denoted by cross-shading.
- a pointed electrode 8 positioned on the semi-conducting body 3 and forming a rectifying connection therewith is welded at 9 to a rod 10, which, similar to the base 1, is provided with a supply conductor 11.
- the rods 1 and 10 are secured by means of solder 12 in a holder constituted by a glass tube 13 which has sealed in it two aligned metal tubes 14 made, for example, of ferrochromium.
- the invention is not limited to the arrangement of the base 1 and the pointed electrode 8 as shown in the drawing, nor to electrode systems comprising a single pointed electrode, but will be applicable also to three or four electrode systems, such as transistors and the like.
- a semi-conductor device comprising a granular, eggshaped, semi-conductive body of which the narrow head has a greater concentration of impurities than the opposite end, said opposite end having a planar portion, means effecting a rectifying connection at the planar portion, and means effecting an ohmic connection at the narrow head.
- the semiconductive body comprises an element selected from the group consisting of germanium and silicon.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Die Bonding (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL321679X | 1952-08-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
US2805369A true US2805369A (en) | 1957-09-03 |
Family
ID=19784006
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US374209A Expired - Lifetime US2805369A (en) | 1952-08-27 | 1953-08-14 | Semi-conductor electrode system |
Country Status (6)
Country | Link |
---|---|
US (1) | US2805369A (es) |
BE (1) | BE522343A (es) |
CH (1) | CH321679A (es) |
FR (1) | FR1082401A (es) |
GB (1) | GB728573A (es) |
NL (2) | NL172085B (es) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2866929A (en) * | 1955-12-01 | 1958-12-30 | Hughes Aircraft Co | Junction-type-semiconductor devices and method of making the same |
US3002134A (en) * | 1957-09-19 | 1961-09-26 | Sylvania Electric Prod | Electrical translator device and method of manufacture |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2572993A (en) * | 1947-10-25 | 1951-10-30 | Gen Electric Co Ltd | Crystal contact device |
US2603692A (en) * | 1945-12-29 | 1952-07-15 | Bell Telephone Labor Inc | Rectifier and method of making it |
GB683248A (en) * | 1950-10-06 | 1952-11-26 | Gen Electric Co Ltd | Improvements in or relating to the manufacture of crystal contact devices |
US2666874A (en) * | 1950-08-25 | 1954-01-19 | Rca Corp | Construction of semiconductor devices |
-
0
- NL NL80736D patent/NL80736C/xx active
- BE BE522343D patent/BE522343A/xx unknown
- NL NLAANVRAGE7100321,A patent/NL172085B/xx unknown
-
1953
- 1953-08-14 US US374209A patent/US2805369A/en not_active Expired - Lifetime
- 1953-08-24 GB GB23293/53A patent/GB728573A/en not_active Expired
- 1953-08-25 FR FR1082401D patent/FR1082401A/fr not_active Expired
- 1953-08-25 CH CH321679D patent/CH321679A/de unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2603692A (en) * | 1945-12-29 | 1952-07-15 | Bell Telephone Labor Inc | Rectifier and method of making it |
US2572993A (en) * | 1947-10-25 | 1951-10-30 | Gen Electric Co Ltd | Crystal contact device |
US2666874A (en) * | 1950-08-25 | 1954-01-19 | Rca Corp | Construction of semiconductor devices |
GB683248A (en) * | 1950-10-06 | 1952-11-26 | Gen Electric Co Ltd | Improvements in or relating to the manufacture of crystal contact devices |
US2723370A (en) * | 1950-10-06 | 1955-11-08 | Hazeltine Research Inc | Electrically semiconductive crystalline body |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2866929A (en) * | 1955-12-01 | 1958-12-30 | Hughes Aircraft Co | Junction-type-semiconductor devices and method of making the same |
US3002134A (en) * | 1957-09-19 | 1961-09-26 | Sylvania Electric Prod | Electrical translator device and method of manufacture |
Also Published As
Publication number | Publication date |
---|---|
FR1082401A (fr) | 1954-12-29 |
GB728573A (en) | 1955-04-20 |
NL172085B (nl) | |
NL80736C (es) | |
CH321679A (de) | 1957-05-15 |
BE522343A (es) |
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