US2765385A - Sintered photoconducting layers - Google Patents

Sintered photoconducting layers Download PDF

Info

Publication number
US2765385A
US2765385A US473001A US47300154A US2765385A US 2765385 A US2765385 A US 2765385A US 473001 A US473001 A US 473001A US 47300154 A US47300154 A US 47300154A US 2765385 A US2765385 A US 2765385A
Authority
US
United States
Prior art keywords
photoconductive
photoconducting
crystals
layer
sintered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US473001A
Other languages
English (en)
Inventor
Soren M Thomsen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE543274D priority Critical patent/BE543274A/xx
Application filed by RCA Corp filed Critical RCA Corp
Priority to US473001A priority patent/US2765385A/en
Priority to GB32841/55A priority patent/GB820547A/en
Priority to JP3149155A priority patent/JPS327973B1/ja
Application granted granted Critical
Publication of US2765385A publication Critical patent/US2765385A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S84/00—Music
    • Y10S84/19—Light sensitive resistor

Definitions

  • This invention relates to sintered photoconducting layers which are particularly useful in gap type and area type photocells.
  • the invention includes methods for preparing sintered photoconducting layers and devices utilizing the sintered photoconducting layers of the invention.
  • a photoconductive device is one which displays a reduced resistance to electric current ow when irradiated with light.
  • a photoconductive device comprises a body of photoconductive material and a pair of electrodes attached thereto. When a voltage is applied to the electrodes, the device displays a decrease in electrical resistance when there is an increase in the intensity of light irradiating the device. An amount of electric current ows through the device which is a function of this electrical resistance.
  • a photoconductive device is a perfect insulator when light to which it is sensitive is absent, and is a perfect conductor when la maximum intensity of light to which it is sensitive is present.
  • a photoconductive device behaves as a high resistance conductor when light to which it is sensitive is absent and behaves as a lower resistance conductor when light to which the device is sensitive is present.
  • the difference in conduction produced by the presence of a unit variation of light intensity is referred to as the photosensitivity of the device.
  • the measure of photosensitivity is in terms of photocurrent under standard conditions.
  • the current passed by the device in darkness is referred to as the dark current
  • the current passed when the device is irradiated is referred to as the light current
  • the dierence between light current and dark current is referred to as the photocurrent.
  • One type of photoconductive device comprises a single crystal of a photoconductive material and electrodes attached to the crystal.
  • Such single crystal photocells exhibit large photocurrents and high ratios of light current to ⁇ dark current.
  • the crystals are usually small in size and, consequently, the total current passed by a single crystal is small.
  • the crystal heats up and the photosensitivity of the crystal is reduced either temporarily or permanently.
  • photoconductive crystals are dii'licult to grow and are fragile. Thus, the expense of manufacture and maintenance often prohibits the use of single crystal photocells.
  • Another type of photoconductive device comprises a body including finely-divided photoconducting powder particles and electrodes attached to said body.
  • the body may include, for example, an unbonded photoconducting powder or a photoconducting powder mixed with a binder such as a synthetic resin.
  • Such powder photocells exhibit a broader band of spectral response than single crystal photocells.
  • powder photocells may be prepared in any desired size, shape or current carrying capacity.
  • these powder-type devices have had the disadvantage of low photosensitivity, and relatively high resistance when the device is irradiated with light to which it is sensitive.
  • the low-photosensitivity and high resistance of powder photocels is generally attributed to the large number of electrical barriers existing between the electrodes.
  • the electric current passing between the electrodes must travel through chains of powder particles.
  • the resistance due to poor electric contact between adjacent particles is multiplied by the number of particles in the chain, partly or completely masking the photosensitivity of the volume of each particle by limiting the maximum amount of current that can be passed by each chain of particles and by heating the particles during the flow of electric current.
  • An object of the invention is to provide improved photoconductive bodies.
  • Another object is to provide photoconductive layers having relatively high photosensitivities.
  • Another object is to provide improved photoconductive devices comprising the improved photoconductive bodies of the invention.
  • a further object is to provide methods for preparing the improved photoconducting bodies of the invention.
  • the photoconducting bodies according to the invention comprise a substantially continuous polycrystalline layer of interlocked photoconducting crystals.
  • the crystals may comprise, for example, a predominant proportion of a substance selected from the group consisting of selenides, sulphides, and sulphoselenides of cadmium having incorporated therein activator proportions of a halide and activator proportions of a metal selected from the group consisting of copper and silver.
  • the devices according to the invention comprise a substantially continuous polycrystalline layer of photoconducting crystals according to the invention and at least one electrode attached thereto.
  • a method for producing a photoconducting layer according to the invention comprises forming a stratum including particles of a material selected from the group consisting of sulphides, selenides and sulphoselenides of cadmium, recrystallizing said material in a molten solvent to a desired range of particle sizes, incorporating into said recrystallized material activator proportions of a halide and activator proportions of a metal selected from the group consisting of copper and silver and evaporating said molten solvent, thereby producing a substantially continuous layer of interlocked crystals of photoconductive material.
  • Figure 1 is one embodiment of a photocell according to the invention.
  • Figure 2 is a series of spectral response curves for typical photocells prepared according to the invention and Figure 3 is a second embodiment of a photocell according to the invention.
  • Example ] An intimate mixture of grams of cadmium sulphide, 10 grams of cadmium chloride, 1.7 milliliters of 0.1 M copper chloride and 500 milliliters of water is prepared. This mixture may be prepared in a blender such as is used for mixing powder with water.
  • a transparent conducting layer on a glass substrate over which the photoconducting layer of the invention is formed.
  • Such a transparent conductive coating may abe prepared by exposing heated glass to the vapors of silicon, tin or titanium chloride and afterwards treating the coating thus formed in la yslightly reducing atmosphere.
  • the glass plate may be treated with 1a mixture of vstannic chloride in absolute alcohol and glacial acetic acid.
  • the electrodes may be in any desired configuration, for example, the electrodes may comprise a simple gap structure comprising two spaced electrodes.
  • 'a photocell of the invention may comprise conducting areas 25 on a glass plate A23 in the configuration of two electrodes having la series of interdigitated [fingers extending so that the electrodes are equidistant from one :another at every point. lSuch a structure provides uniform gap width and :a relatively long gap length for a .given area. A photoconductive layer 21 of the invention is now formed on top of the electrodes 25.
  • the photoconducting layers of the invention may be used in simple photoconductive devices or in more complicated devices including other structures such -as electroluminescent materials and in conjunction with television pickup tubes including cathode ray scanning means.
  • the sintered photocells of the invention have the advantage over single crystal photocells in that they are cheaper and easier to prepare, are more rugged, exhibit a panchromatic response to light, may be made in any desired size or shape, and may be designed to handle large currents.
  • the sintered photocells of the invention have the advantage over powder photocells in that they are cheaper and easier to prepare, exhibit a greater response to light at the blue end of the spectrum, exhibit a higher speed of response to light and exhibit greater photosensitivity at lower voltages.
  • the sintered photoconductive layers of the invention have the advantage over presently used vid-icon targets of greater photosensitivity rand are easier to prepare.
  • a method for producing a sintered photoconductive layer comprising forming a stratum including particles of a substance selected from the group consisting of sulphides, selenides and sulphoselenides of cadmium, recrystallizing said substance in said layer in a molten solvent, incorporating into said recrystallized substance, activator proportions of a member of the group consisting of copper and silver, removing substantially all of said molten solvent and sintering said recrystallized substance, thereby producing a substantially continuous layer of interlocked crystals of photoconductive material.
  • a method for preparing a photoconductive layer comprising forming a stratum including particles of cadmium sulphide, recrystallizing said cadmium sulphide in a molten solvent, incorporating into said recrystallized substance activator proportions of chloride and copper, evaporating substantially all of said molten solvent and sintering said recrystallized cadmium sulphide thereby producing a substantially continuous layer of interlocked crystals of photoconductive material.
  • a method for preparing a photoconductive layer comprising forming a stratum including particles of cadmium selenide, recrystallizing said cadmium selenide in a molten solvent, incorporating into said recrystallized substance activator proportions of chloride and copper, evaporating substantially all of said molten solvent and sintering said recrystallized cadmium selenide thereby producing a substantially continuous layer of interlocked crystals of photoconductive material.
  • a process for producing a photoconductive layer comprising coating a substrate with an intimate mixture of about parts by weight cadmium sulphide, 10 parts by weight cadmium chloride, and 0.01 parts by Weight of copper and then firing said coating at about 600 C. in an atmosphere that is inert to said coating until a substantially continuous layer of interlocked crystals of photoconductive material is produced.
  • a substantially continuous polycrystalline layer of interlocked photoconducting crystals comprising a substance selected from the group consisting of sulphides, selenides and sulphoselenides of cadmium, said crystals having incorporated therein activator proportions of a halide and having activator proportions of an element selected from the group consisting of copper and silver.
  • a photoconductive device comprising a substantially continuous polycrystalline layer of interlocked photoconducting crystals of cadmium sulphide containing activator proportions of chloride and copper and at least one electrode attached to said layer.
  • a photoconductive device comprising a substantially continuous polycrystalline layer of interlocked photoconducting crystals, said crystals comprising a substance selected from the group consisting of sulphides, selenides and sulphoselenides of cadmium, said crystals having incorporated therein activator proportions of a halide and having activator proportions of an element selected from the group consisting of copper and silver and at least one electrode attached to said layer.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Hybrid Cells (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Photoreceptors In Electrophotography (AREA)
US473001A 1954-12-03 1954-12-03 Sintered photoconducting layers Expired - Lifetime US2765385A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
BE543274D BE543274A (it) 1954-12-03
US473001A US2765385A (en) 1954-12-03 1954-12-03 Sintered photoconducting layers
GB32841/55A GB820547A (en) 1954-12-03 1955-11-16 Sintered photoconducting layers
JP3149155A JPS327973B1 (it) 1954-12-03 1955-12-03

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US473001A US2765385A (en) 1954-12-03 1954-12-03 Sintered photoconducting layers

Publications (1)

Publication Number Publication Date
US2765385A true US2765385A (en) 1956-10-02

Family

ID=23877773

Family Applications (1)

Application Number Title Priority Date Filing Date
US473001A Expired - Lifetime US2765385A (en) 1954-12-03 1954-12-03 Sintered photoconducting layers

Country Status (4)

Country Link
US (1) US2765385A (it)
JP (1) JPS327973B1 (it)
BE (1) BE543274A (it)
GB (1) GB820547A (it)

Cited By (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2876202A (en) * 1954-12-01 1959-03-03 Rca Corp Photoconducting powders and method of preparation
US2879362A (en) * 1956-11-14 1959-03-24 Rauland Corp Photosensitive device
US2879182A (en) * 1956-05-31 1959-03-24 Rauland Corp Photosensitive devices
US2879360A (en) * 1956-10-01 1959-03-24 Lane Wells Co Photoconductive device having a silicon dioxide protective layer and method of making same
US2884508A (en) * 1956-10-01 1959-04-28 Dresser Ind Thin metal films and method of making same
US2884507A (en) * 1956-10-01 1959-04-28 Dresser Ind Photoconductive device and method of making same
US2908594A (en) * 1957-03-19 1959-10-13 Rca Corp Sintered photoconducting photocells and methods of making them
US2965867A (en) * 1959-01-02 1960-12-20 Clairex Corp Photosensitive element
US2985757A (en) * 1956-10-05 1961-05-23 Columbia Broadcasting Syst Inc Photosensitive capacitor device and method of producing the same
US2986717A (en) * 1960-05-11 1961-05-30 Barnes Eng Co Thermistor bolometers
US2986534A (en) * 1957-08-22 1961-05-30 Gen Electric Preparation of photoconductive material
US2995660A (en) * 1956-09-28 1961-08-08 Sylvania Electric Prod Detector
US2997408A (en) * 1958-05-21 1961-08-22 Itt Process for producing photoconductive cadmium sulfide
US2999240A (en) * 1957-11-01 1961-09-05 Frederick H Nicoll Photovoltaic cells of sintered material
US3011379A (en) * 1957-02-05 1961-12-05 Baldwin Piano Co Electronic musical instrument with photoelectric switching
US3013232A (en) * 1957-12-16 1961-12-12 Hupp Corp Control of response curves for photoelectric cells
US3019404A (en) * 1955-12-22 1962-01-30 Bulova Res And Dev Lab Inc Thermistors and methods of making same
US3023657A (en) * 1955-08-25 1962-03-06 Baldwin Piano Co Photoelectric musical instruments and the like
US3032731A (en) * 1956-10-01 1962-05-01 Dresser Ind Photoconductive device and method of producing same
US3037941A (en) * 1959-07-15 1962-06-05 Thorn Electrical Ind Ltd Photoconductive materials
US3087838A (en) * 1955-10-05 1963-04-30 Hupp Corp Methods of photoelectric cell manufacture
US3116260A (en) * 1960-01-29 1963-12-31 Stern Frank Semiconductors having equal numbers of acceptor and donor impurities
US3145126A (en) * 1961-01-10 1964-08-18 Clevite Corp Method of making diffused junctions
US3175091A (en) * 1962-07-02 1965-03-23 Ibm Photoconductor material and stabilization thereof at low temperature
US3188594A (en) * 1962-01-25 1965-06-08 Gen Electric Thermally sensitive resistances
US3187414A (en) * 1959-02-05 1965-06-08 Baldwin Co D H Method of producing a photocell assembly
US3202609A (en) * 1962-01-31 1965-08-24 Ibm High mobility photoconductor sintered shapes and process for their preparation
US3238150A (en) * 1962-09-12 1966-03-01 Xerox Corp Photoconductive cadmium sulfide powder and method for the preparation thereof
US3238062A (en) * 1962-04-20 1966-03-01 Ibm Photoconductor preparation
US3248261A (en) * 1962-08-16 1966-04-26 Ibm Photoconducting layers
US3284235A (en) * 1962-02-14 1966-11-08 Philips Corp Method of manufacturing photoconductive layers
US3287684A (en) * 1964-02-27 1966-11-22 Motson Services Inc Electrical heating device
US3379527A (en) * 1963-09-18 1968-04-23 Xerox Corp Photoconductive insulators comprising activated sulfides, selenides, and sulfoselenides of cadmium
US3398316A (en) * 1955-08-04 1968-08-20 Army Usa Infrared imaging device with photoconductive target
US3447234A (en) * 1964-10-12 1969-06-03 Singer General Precision Photoconductive thin film cell responding to a broad spectral range of light input
US3452314A (en) * 1967-05-22 1969-06-24 Victory Eng Corp Low noise thermistor assembly and method
US3519480A (en) * 1967-01-13 1970-07-07 Eastman Kodak Co Process for treating photoconductive cadmium sulfide layers
US3638022A (en) * 1968-09-20 1972-01-25 Stanislav Fedorovich Kozlov Low-energy nuclear radiation detector of the semiconductor type
US3754965A (en) * 1971-04-05 1973-08-28 Varian Associates A method for making an electrophotographic plate
US3913055A (en) * 1972-12-29 1975-10-14 Gen Electric Photoconductive varistor
US3962778A (en) * 1973-12-17 1976-06-15 General Dynamics Corporation Photodetector array and method of manufacturing same
US4001586A (en) * 1975-05-09 1977-01-04 Plessey Incorporated Thick film sensor and infrared detector
US4053863A (en) * 1971-06-03 1977-10-11 Varian Associates, Inc. Electrophotographic photoconductive plate and the method of making same
US4145214A (en) * 1977-05-25 1979-03-20 Eastman Kodak Company Co-crystalline organic photoconductors and heterogeneous compositions thereof
US4920394A (en) * 1984-08-31 1990-04-24 Matsushita Electric Industrial Co., Ltd. Photo-sensing device with S-shaped response curve
US20050179031A1 (en) * 2002-02-08 2005-08-18 Marco Sampietro Organic semiconductor photodetector
WO2010060154A1 (en) * 2008-11-27 2010-06-03 Monash University Photovoltaic devices
US11362224B2 (en) * 2019-10-18 2022-06-14 Research & Business Foundation Sungkyunkwan University Photodetector and method of manufacturing the photodetector

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3603265A1 (de) * 1985-02-06 1986-08-07 Sharp K.K., Osaka Herstellung eines photoelektrischen konversionsfilms und bild-sensor vom kontakt-typ

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2582850A (en) * 1949-03-03 1952-01-15 Rca Corp Photocell
US2629039A (en) * 1950-06-07 1953-02-17 Weston Electrical Instr Corp Selenium cell and process for manufacturing the same
US2651700A (en) * 1951-11-24 1953-09-08 Francois F Gans Manufacturing process of cadmium sulfide, selenide, telluride photoconducting cells
US2668867A (en) * 1952-03-21 1954-02-09 Vitro Corp Of America Photocell construction
US2706792A (en) * 1951-05-25 1955-04-19 Gen Electric X-ray detection

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2582850A (en) * 1949-03-03 1952-01-15 Rca Corp Photocell
US2629039A (en) * 1950-06-07 1953-02-17 Weston Electrical Instr Corp Selenium cell and process for manufacturing the same
US2706792A (en) * 1951-05-25 1955-04-19 Gen Electric X-ray detection
US2651700A (en) * 1951-11-24 1953-09-08 Francois F Gans Manufacturing process of cadmium sulfide, selenide, telluride photoconducting cells
US2668867A (en) * 1952-03-21 1954-02-09 Vitro Corp Of America Photocell construction

Cited By (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2876202A (en) * 1954-12-01 1959-03-03 Rca Corp Photoconducting powders and method of preparation
US3398316A (en) * 1955-08-04 1968-08-20 Army Usa Infrared imaging device with photoconductive target
US3023657A (en) * 1955-08-25 1962-03-06 Baldwin Piano Co Photoelectric musical instruments and the like
US3087838A (en) * 1955-10-05 1963-04-30 Hupp Corp Methods of photoelectric cell manufacture
US3019404A (en) * 1955-12-22 1962-01-30 Bulova Res And Dev Lab Inc Thermistors and methods of making same
US2879182A (en) * 1956-05-31 1959-03-24 Rauland Corp Photosensitive devices
US2995660A (en) * 1956-09-28 1961-08-08 Sylvania Electric Prod Detector
US2884508A (en) * 1956-10-01 1959-04-28 Dresser Ind Thin metal films and method of making same
US2884507A (en) * 1956-10-01 1959-04-28 Dresser Ind Photoconductive device and method of making same
US2879360A (en) * 1956-10-01 1959-03-24 Lane Wells Co Photoconductive device having a silicon dioxide protective layer and method of making same
US3032731A (en) * 1956-10-01 1962-05-01 Dresser Ind Photoconductive device and method of producing same
US2985757A (en) * 1956-10-05 1961-05-23 Columbia Broadcasting Syst Inc Photosensitive capacitor device and method of producing the same
US2879362A (en) * 1956-11-14 1959-03-24 Rauland Corp Photosensitive device
US3011379A (en) * 1957-02-05 1961-12-05 Baldwin Piano Co Electronic musical instrument with photoelectric switching
US2908594A (en) * 1957-03-19 1959-10-13 Rca Corp Sintered photoconducting photocells and methods of making them
US2986534A (en) * 1957-08-22 1961-05-30 Gen Electric Preparation of photoconductive material
US2999240A (en) * 1957-11-01 1961-09-05 Frederick H Nicoll Photovoltaic cells of sintered material
US3013232A (en) * 1957-12-16 1961-12-12 Hupp Corp Control of response curves for photoelectric cells
US2997408A (en) * 1958-05-21 1961-08-22 Itt Process for producing photoconductive cadmium sulfide
US2965867A (en) * 1959-01-02 1960-12-20 Clairex Corp Photosensitive element
US3187414A (en) * 1959-02-05 1965-06-08 Baldwin Co D H Method of producing a photocell assembly
US3037941A (en) * 1959-07-15 1962-06-05 Thorn Electrical Ind Ltd Photoconductive materials
US3116260A (en) * 1960-01-29 1963-12-31 Stern Frank Semiconductors having equal numbers of acceptor and donor impurities
US2986717A (en) * 1960-05-11 1961-05-30 Barnes Eng Co Thermistor bolometers
US3145126A (en) * 1961-01-10 1964-08-18 Clevite Corp Method of making diffused junctions
US3188594A (en) * 1962-01-25 1965-06-08 Gen Electric Thermally sensitive resistances
US3202609A (en) * 1962-01-31 1965-08-24 Ibm High mobility photoconductor sintered shapes and process for their preparation
US3284235A (en) * 1962-02-14 1966-11-08 Philips Corp Method of manufacturing photoconductive layers
US3238062A (en) * 1962-04-20 1966-03-01 Ibm Photoconductor preparation
US3175091A (en) * 1962-07-02 1965-03-23 Ibm Photoconductor material and stabilization thereof at low temperature
US3248261A (en) * 1962-08-16 1966-04-26 Ibm Photoconducting layers
US3238150A (en) * 1962-09-12 1966-03-01 Xerox Corp Photoconductive cadmium sulfide powder and method for the preparation thereof
US3379527A (en) * 1963-09-18 1968-04-23 Xerox Corp Photoconductive insulators comprising activated sulfides, selenides, and sulfoselenides of cadmium
US3287684A (en) * 1964-02-27 1966-11-22 Motson Services Inc Electrical heating device
US3447234A (en) * 1964-10-12 1969-06-03 Singer General Precision Photoconductive thin film cell responding to a broad spectral range of light input
US3519480A (en) * 1967-01-13 1970-07-07 Eastman Kodak Co Process for treating photoconductive cadmium sulfide layers
US3452314A (en) * 1967-05-22 1969-06-24 Victory Eng Corp Low noise thermistor assembly and method
US3638022A (en) * 1968-09-20 1972-01-25 Stanislav Fedorovich Kozlov Low-energy nuclear radiation detector of the semiconductor type
US3754965A (en) * 1971-04-05 1973-08-28 Varian Associates A method for making an electrophotographic plate
US4053863A (en) * 1971-06-03 1977-10-11 Varian Associates, Inc. Electrophotographic photoconductive plate and the method of making same
US3913055A (en) * 1972-12-29 1975-10-14 Gen Electric Photoconductive varistor
US3962778A (en) * 1973-12-17 1976-06-15 General Dynamics Corporation Photodetector array and method of manufacturing same
US4001586A (en) * 1975-05-09 1977-01-04 Plessey Incorporated Thick film sensor and infrared detector
US4145214A (en) * 1977-05-25 1979-03-20 Eastman Kodak Company Co-crystalline organic photoconductors and heterogeneous compositions thereof
US4920394A (en) * 1984-08-31 1990-04-24 Matsushita Electric Industrial Co., Ltd. Photo-sensing device with S-shaped response curve
US20050179031A1 (en) * 2002-02-08 2005-08-18 Marco Sampietro Organic semiconductor photodetector
WO2010060154A1 (en) * 2008-11-27 2010-06-03 Monash University Photovoltaic devices
US11362224B2 (en) * 2019-10-18 2022-06-14 Research & Business Foundation Sungkyunkwan University Photodetector and method of manufacturing the photodetector

Also Published As

Publication number Publication date
BE543274A (it)
GB820547A (en) 1959-09-23
JPS327973B1 (it) 1957-09-21

Similar Documents

Publication Publication Date Title
US2765385A (en) Sintered photoconducting layers
US2930999A (en) Photo-conductive device and method of
US2999240A (en) Photovoltaic cells of sintered material
US2937353A (en) Photoconductive devices
US2879182A (en) Photosensitive devices
Thomsen et al. High‐Sensitivity Photoconductor Layers
US2721950A (en) Electroluminescent cell
US2866878A (en) Photoconducting devices
US3142586A (en) Method for the manufacture of photosensitive elements
US2876202A (en) Photoconducting powders and method of preparation
Nicoll et al. Large area high-current photoconductive cells using cadmium sulfide powder
US3337365A (en) Electrical resistance composition and method of using the same to form a resistor
US3238150A (en) Photoconductive cadmium sulfide powder and method for the preparation thereof
US2879362A (en) Photosensitive device
US3369159A (en) Printed transistors and methods of making same
US3590253A (en) Solid-state photoconductor-electroluminescent image intensifier
US3191045A (en) Photosensitive element having photoconductive layers
US2884507A (en) Photoconductive device and method of making same
US3745504A (en) Impregnated porous photoconductive device and method of manufacture
USRE22052E (en) Light-sensitive device
US3486059A (en) High sensitivity photoconductor for image pickup tube
US3248261A (en) Photoconducting layers
JPS6124831B2 (it)
US3114045A (en) Photo-conductive translucent electroluminescent device and method of manufacture
US3483028A (en) Preparation of light sensitive device of enhanced photoconductive sensitivity