US2688110A - Semiconductor translating device - Google Patents
Semiconductor translating device Download PDFInfo
- Publication number
- US2688110A US2688110A US198294A US19829450A US2688110A US 2688110 A US2688110 A US 2688110A US 198294 A US198294 A US 198294A US 19829450 A US19829450 A US 19829450A US 2688110 A US2688110 A US 2688110A
- Authority
- US
- United States
- Prior art keywords
- contact
- semiconductive
- bead
- contacts
- globule
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
- Y10T29/49171—Assembling electrical component directly to terminal or elongated conductor with encapsulating
- Y10T29/49172—Assembling electrical component directly to terminal or elongated conductor with encapsulating by molding of insulating material
Definitions
- This invention relates to translating devices and more particularly to translating devices including a body of semiconductive material on a surface of which one or more point contacts bear, and to methods of manufacture of such devices,
- translating device of the type to which this invention pertains comprising a block of semiconductive material mounted on a conductive backing member, termed the base, and a pair of closely spaced limited area contacts which make asymmetric connections with the surface of the conductive body is disclosed in Patent 2,524,035 of John Bardeen and Walter H. Brattain issued October 3, 1950.
- the limited area contacts termed the emitter and collector are spaced for mutual influence and in one form of the device are formed of fine wire.
- One object of this invention is to simplify the structure and manufacture of translating devices of the above-noted type. More specific objects of this invention are to reduce the size of translating devices and also their cost by reducing the amount of material employed and eliminating the precision work and the number ofsteps necessary in their manufacture.
- a semiconductor translating device of the eneral construction described above is encased in a bead of insulating material.
- the contact or contacts and the semiconductor body are fabricated in a unitary assembly and are secured and protected in prescribed relationshi by an encasin bead or capsule of insulating material.
- Contacts may be so arranged and the casing material so applied to the assembly that the portion of the bead or capsule wherein the contacts engage the semiconductor surface is hollow.
- the contacts are provided with spring sections within the cavity thereby insuring the maintenance of a spring pressure biasing the contacts toward the semiconductor throughout the life of the device without the danger of losing contact or shiftin the position of the contacts due to mechanical strains applied to the bead or to expansion and contraction of the bead with temperature.
- Fig. 1 is a sectioned front elevation of a threeelectrode translating device illustrative of one embodiment of thi invention.
- Fig. 2 is a sectioned side elevation of the device of Fig. 1 taken along the line 2-2.
- Figs. 1 and 2 show a three-electrode translating device H includin a semioonductive body l2 of germanium or silicon secured to a base member [3 by an ohmic connection, and having a pair of point contacts i l and i5 engaging its other surface to provide an emitter and a collector.
- the contacts are of spring material; favorable results have been obtained with a beryllium copper emit er and a Phosphor bronze collector.
- This assembly is surrounded by a bead ll which may be of a styrene-polyester casting resin and which contains a cavity in the region l8 surrounding the point contacts and the associated semiconductor surface.
- the spring sections It and 26 of the point contaots are biased in com pression toward the semiconductor so that through all temperature cycles or other mechanical stresses to which the unit will be subjected during its operation the points will be stable mechani ally.
- the cavity 18 of the bead might conveniently be left empty, it has been found that the surface of the semiconductor can be readily protected from contamination and that the hollow can be maintained and controlled in the bead by filling the region with a material which stays soft at any operating temperature to which the device is to be subjected, which will not contaminate the wafer surface, and which will. protect the surface from contamination by any of the other materials employed.
- materials such as a high purity paraffin or polyethylene polyisobutylone.
- the ends of the contact wires 22 and 23 are utilized as terminals. These wires may be bent around the surface of the bead I! and secured with an outerlayer of beading material (not shown), although they are anchored to the bead sufficiently by the bend 3
- the illustrative unit can be constructed by forming a spade end 25 on a suitable conductive base l3, for example a 20-mil copper wire.
- spade end 25 is then bent at 90 degrees to the axis of the wire and the portion 27 near its end is bent in the direction of the axis to form an offset.
- a flat conductive strip can be employed as the base I3 and can be bent as above or otherwise to form a pocket in which the semiconductive wafer can be mounted, this strip can be copper 50 mils wide and 5 to mils thick.
- a semiconductive Wafer l2 of silicon or germanium 25 mils square is then polished mechanically on both major surfaces, and one surface is tinned and soldered or welded to the portion of the spade end 25 on the base 13 extending at 90 degrees to its axis. The other major surface is then etched, for example as disclosed in the application of R. D. Heidenreich, Serial No.
- 164,303 filed May 25, 1950, in an etchant comprising 15 parts of acetic acid, 25 parts of nitric acid, 15 parts of 48 per cent hydrofluoric acid and 1 part of liquid bromine. This etch is followed by a rinse. The order of this operation may be re versed and the chemical polish completed prior to mounting the Wafer.
- a globule of polyethylene polyisobutylene or some other material which will remain soft at the operating temperatures of the unit is applied to the assembly to encompass the wafer point and one bend of the S-shaped portion of each contact wire adjacent the point.
- This globule which provides a means of attaining a cavity within the encasing bead, is supported in position by the pocket formed by the ofiset portion 2? of the spade end of the base in cooperation with the contact wires.
- a crust 28 is formed over the globule by applying a quick drying lacquer thereto in a thin layer.
- This lacquer should be of a type that is not detrimental to the material of the globule and is tough enough to form a supporting crust over it; a vinyl lacquer may be used for this purpose.
- a bead ii of the encasing material is then formed over the shaft of the base contact l3, over the globule forming cavity I8, and over the upper bends 30 and 3
- a suitable beading material is a styrene-polyester casting resin, for example that identified as Selectron, applied either in the clear state or with a silica loading to increase the heat dissipation from the operating elements.
- a successful beading material has been Selectron loaded 45 per cent with silica. This coating is then cured for example by heating to from 80 C. to 120 C. for one hour after which the point contact wires may be bent around the bead and a second application of the beading material applied and cured to insure a rugged mechanical assembly.
- the units may be constructed with a single point contact and function either as a point contact rectifier or with a suitable choice of translucent encasing material as a photosensitive translating device of the type disclosed in J. N. Shive application Serial No. 110,684, filed August 17, 1949. Where photo effects are undesirable it may be found advantageous to employ beading compositions which are opaque to light.
- a semiconductive translating device comprising a semiconductive body, a first electrode making contact to said body, a second electrode secured to said body, a seamless hollow envelope of insulating material surrounding said body and engaging said electrodes and securing them in their relative positions, said envelope having a cavity which contains at least a portion of said semiconductive body and said first contact, a flexible section in said first electrode within said cavity and intermediate said envelope and said first contact, and a yieldable, nonconducting material surrounding said flexible section and filling said cavity.
- a semiconductive translating device comprising a conductive member containing a pocket, a semiconductive body electrically and mechanically connected to said member in said pocket;
- a contact to said body a conductive lead engaging and extending from said contact, a conductive lead extending from said conductive member, a seamless hollow envelope of insulating material surrounding said member and said body and engaging a portion of said member and said leads and securing them in their relative positions, said envelope having a cavity partially defined by said pocket and containing at least a portion of said semiconductive body and said contact, a flexible section in said lead intermediate said envelope and said contact and Within said cavity, and a yieldable, nonconducting material surrounding said flexible section and filling said cavity.
- a semiconductive translating device comprising a semiconductive body, a first electrode making a limited area contact to said body, a second electrode secured to said body and making a contact thereto of greater area than said first contact, a seamless hollow envelope of insulating material surrounding said body and engaging said electrodes and securing them in their relative positions, said envelope having a cavity Which contains at least a portion of said semiconductive body and said contact of limited area,
- a semiconductive translating device including a base, an emitter and a collector electrode comprising, a wire, a semiconductive body secured to said wire with an ohmic contact, a pair of wires of resilient material, a point contact on the end of each of said resilient wires engaging said body in critically spaced relationship, 8- shaped bends in said resilient wires, and a bead having a cavity containing said body, said point contacts and the turn of each S-shaped bend adjacent said contacts, the wall of said bead securing said wire and the turn of each s-shaped bend farthest removed from said contacts.
- the steps which comprise mounting a semiconductive body on a conductive base, mounting a limited area contact on the body with a spring biasing it toward the body, placing a globule of material which remains soft over the contact and spring, and forming a bead over the globule, the walls of the bead securing the conductive base, the spring and the contact.
- the steps which comprise mounting a semiconductive body on a conductive base, mounting a limited area contact on the body with a spring biasing it toward the body, placing a globule of material which remains soft over the contact and spring, coating the globule with a tough protective layer, and forming a bead over the globule, the walls of the bead securing the conductive base, the spring and the contact.
- steps which comprise mounting a semiconductive body on a conductive base, forming an S-shaped bend in a pointed resilient wire, mounting the pointed end of the wire with the bend in compression on a semiconductive surface, placing a globule of material which remains soft over the contact and the turn of the s-shaped bend adjacent the contact, and forming a bead over the globule, the walls of the bead securing the conductive base and the exposed portion of the s-shaped bend.
- the steps which comprise forming a spade end on a conductive rod, securing a semiconductive body to a portion of said spade end adjacent the rod, bending another portion of said spade end in the direction of the body, mounting a pair of spring biased point contacts on said body in critically spaced relationship, placing a globule of material which remains soft in the pocket formed by the bent spade end and over the contacts, coating the globule with a tough protective layer, and forming a bead over the globule, the walls of the bead securing the conductive rod and the contacts.
- the steps which comprise mounting a semiconductive body on a conductive base, mounting a limited area contact on the body with a spring biasing it toward the body, placing a globule of polyethylene polyiso- 6 butylene over the contact and spring, coating the globule with a vinyl lacquer, forming a bead. of a styrene-polyester casting resin over the globule to secure the conductive base, the spring and contact, and curing the bead by heating at about C. for about one hour.
- a semiconductive translating device comprising a semiconductive body, base, emitter and collector contacts to said body, leads extending from each of said contacts, a flexible section in at least one of said leads adjacent its respective contact, a seamless hollow envelope of insulating material surrounding said body, said envelope engaging and securing in fixed relationship at least a portion of each of said leads, said envelope having a cavity which contains at least a portion of the semiconductive body and said flexible section of said lead and its respective contact to said body, and a yieldable, nonconducting material surrounding said flexible lead section and filling said cavity.
- a semiconductor translating device comprising a semiconductive body, a first electrode making a limited area contact to said body, a second electrode secured to said body and making a contact thereto of greater area than said first contact, a seamless hollow envelope of resinous insulating material surrounding said body, said envelope engaging a portion of said electrodes and said body and securing them in their relative positions, a bend in said first electrode embedded in said resinous material to anchor the electrode, said envelope having a cavity encompassing that portion of said first electrode and of said semi-conductive body surface including said limited area contact, a flexible section in said first electrode Within said cavity, and a soft protective material for said semiconductive body filling the cavity.
- a semiconductive translating device the steps which comprise securing an electrical contact to a semiconductive body, mounting a second contact on the body at a location spaced from said contact, forming a flexible section in the lead to the second contact, placing a globule of material which remains in a yieldable state over the second contact and flexible lead section, and forming a continuous layer of rigid nonconductive material over the globule, the semiconductive body, and the contacts to said body, said rigid material securing at least a portion of the leads associated with the contacts.
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thermistors And Varistors (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE507187D BE507187A (ja) | 1950-11-30 | ||
NL7407315.A NL162726B (nl) | 1950-11-30 | Leger met een circulerend smeermiddel. | |
NL82047D NL82047C (ja) | 1950-11-30 | ||
US198294A US2688110A (en) | 1950-11-30 | 1950-11-30 | Semiconductor translating device |
FR61630D FR61630E (fr) | 1950-11-30 | 1951-04-20 | élément de circuit solide utilisable notamment comme amplificateur |
DEW5665A DE969491C (de) | 1950-11-30 | 1951-04-25 | Halbleiteruebertragungseinrichtung |
CH297595D CH297595A (de) | 1950-11-30 | 1951-08-27 | Halbleiterelement. |
GB26909/51A GB728223A (en) | 1950-11-30 | 1951-11-16 | Semiconductor devices and methods of making them |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US198294A US2688110A (en) | 1950-11-30 | 1950-11-30 | Semiconductor translating device |
Publications (1)
Publication Number | Publication Date |
---|---|
US2688110A true US2688110A (en) | 1954-08-31 |
Family
ID=22732771
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US198294A Expired - Lifetime US2688110A (en) | 1950-11-30 | 1950-11-30 | Semiconductor translating device |
Country Status (7)
Country | Link |
---|---|
US (1) | US2688110A (ja) |
BE (1) | BE507187A (ja) |
CH (1) | CH297595A (ja) |
DE (1) | DE969491C (ja) |
FR (1) | FR61630E (ja) |
GB (1) | GB728223A (ja) |
NL (2) | NL82047C (ja) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2725506A (en) * | 1954-01-25 | 1955-11-29 | Clevite Corp | Point contact semiconductor unit |
US2745045A (en) * | 1952-07-19 | 1956-05-08 | Sylvania Electric Prod | Semiconductor devices and methods of fabrication |
US2758261A (en) * | 1952-06-02 | 1956-08-07 | Rca Corp | Protection of semiconductor devices |
US2820983A (en) * | 1951-05-17 | 1958-01-28 | Western Electric Co | Assembly fixture for point contact device |
US2829320A (en) * | 1955-01-12 | 1958-04-01 | Bell Telephone Labor Inc | Encapsulation for electrical components and method of manufacture |
US2846625A (en) * | 1955-03-31 | 1958-08-05 | Columbia Broadcasting Syst Inc | Semiconductor device |
US2850687A (en) * | 1953-10-13 | 1958-09-02 | Rca Corp | Semiconductor devices |
US2856571A (en) * | 1955-02-19 | 1958-10-14 | Kieler Howaldtswerke Ag Abt Ap | Subminiature semiconductor instrument and method and apparatus for producing the same |
US2888619A (en) * | 1955-05-20 | 1959-05-26 | John P Hammes | Semiconductor devices |
US2888736A (en) * | 1955-03-31 | 1959-06-02 | Raytheon Mfg Co | Transistor packages |
DE1059571B (de) * | 1957-08-13 | 1959-06-18 | Siemens Ag | Trockengleichrichteranordnung kleiner Bauweise und Verfahren zu ihrer Herstellung |
US2981873A (en) * | 1957-05-02 | 1961-04-25 | Sarkes Tarzian | Semiconductor device |
US3189801A (en) * | 1960-11-04 | 1965-06-15 | Microwave Ass | Point contact semiconductor devices |
US3189799A (en) * | 1961-06-14 | 1965-06-15 | Microwave Ass | Semiconductor devices and method of fabricating them |
US3243670A (en) * | 1963-09-30 | 1966-03-29 | Int Standard Electric Corp | Mountings for semiconductor devices |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL269212A (ja) * | 1953-07-28 | 1900-01-01 | ||
DE1043515B (de) * | 1953-10-01 | 1958-11-13 | Siemens Ag | Verfahren zur Herstellung einer in einem mit Vergussmasse ausgefuellten, vakuumdichtabgeschlossenen Gehaeuse untergebrachten Halbleiteranordnung |
DE1019766B (de) * | 1955-03-31 | 1957-11-21 | Licentia Gmbh | Isolations- und Korrosionsschutz fuer Gleichrichterplatten |
DE1146205B (de) * | 1960-02-23 | 1963-03-28 | Siemens Ag | Halbleiteranordnung |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2406405A (en) * | 1941-05-19 | 1946-08-27 | Sperry Gyroscope Co Inc | Coaxial condenser crystal and method of making same |
US2432594A (en) * | 1942-08-26 | 1947-12-16 | Union Switch & Signal Co | Rectifying detector for high-frequency alternating electric currents |
US2467811A (en) * | 1945-03-21 | 1949-04-19 | Gen Electric | Rectifier terminal device |
US2468845A (en) * | 1944-11-20 | 1949-05-03 | Union Switch & Signal Co | Alternating electric current rectifier |
US2472938A (en) * | 1943-11-08 | 1949-06-14 | Gen Electric Co Ltd | Point-contact rectifier |
US2475641A (en) * | 1946-10-29 | 1949-07-12 | John Archer Carter | Prompting system |
US2516344A (en) * | 1947-07-18 | 1950-07-25 | Daniel W Ross | Rectifier |
US2572993A (en) * | 1947-10-25 | 1951-10-30 | Gen Electric Co Ltd | Crystal contact device |
US2606960A (en) * | 1949-06-01 | 1952-08-12 | Bell Telephone Labor Inc | Semiconductor translating device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH264445A (de) * | 1947-09-04 | 1949-10-15 | Geyer Karol | Verfahren zur Herstellung von Kristalldioden und Einrichtung zur Durchführung des Verfahrens, sowie nach diesem Verfahren hergestellte Kristalldiode. |
BE488563A (ja) * | 1948-04-21 |
-
0
- NL NL7407315.A patent/NL162726B/xx unknown
- NL NL82047D patent/NL82047C/xx active
- BE BE507187D patent/BE507187A/xx unknown
-
1950
- 1950-11-30 US US198294A patent/US2688110A/en not_active Expired - Lifetime
-
1951
- 1951-04-20 FR FR61630D patent/FR61630E/fr not_active Expired
- 1951-04-25 DE DEW5665A patent/DE969491C/de not_active Expired
- 1951-08-27 CH CH297595D patent/CH297595A/de unknown
- 1951-11-16 GB GB26909/51A patent/GB728223A/en not_active Expired
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2406405A (en) * | 1941-05-19 | 1946-08-27 | Sperry Gyroscope Co Inc | Coaxial condenser crystal and method of making same |
US2432594A (en) * | 1942-08-26 | 1947-12-16 | Union Switch & Signal Co | Rectifying detector for high-frequency alternating electric currents |
US2472938A (en) * | 1943-11-08 | 1949-06-14 | Gen Electric Co Ltd | Point-contact rectifier |
US2468845A (en) * | 1944-11-20 | 1949-05-03 | Union Switch & Signal Co | Alternating electric current rectifier |
US2467811A (en) * | 1945-03-21 | 1949-04-19 | Gen Electric | Rectifier terminal device |
US2475641A (en) * | 1946-10-29 | 1949-07-12 | John Archer Carter | Prompting system |
US2516344A (en) * | 1947-07-18 | 1950-07-25 | Daniel W Ross | Rectifier |
US2572993A (en) * | 1947-10-25 | 1951-10-30 | Gen Electric Co Ltd | Crystal contact device |
US2606960A (en) * | 1949-06-01 | 1952-08-12 | Bell Telephone Labor Inc | Semiconductor translating device |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2820983A (en) * | 1951-05-17 | 1958-01-28 | Western Electric Co | Assembly fixture for point contact device |
US2906931A (en) * | 1952-06-02 | 1959-09-29 | Rca Corp | Semiconductor devices |
US2758261A (en) * | 1952-06-02 | 1956-08-07 | Rca Corp | Protection of semiconductor devices |
US2745045A (en) * | 1952-07-19 | 1956-05-08 | Sylvania Electric Prod | Semiconductor devices and methods of fabrication |
US2850687A (en) * | 1953-10-13 | 1958-09-02 | Rca Corp | Semiconductor devices |
US2725506A (en) * | 1954-01-25 | 1955-11-29 | Clevite Corp | Point contact semiconductor unit |
US2829320A (en) * | 1955-01-12 | 1958-04-01 | Bell Telephone Labor Inc | Encapsulation for electrical components and method of manufacture |
US2856571A (en) * | 1955-02-19 | 1958-10-14 | Kieler Howaldtswerke Ag Abt Ap | Subminiature semiconductor instrument and method and apparatus for producing the same |
US2846625A (en) * | 1955-03-31 | 1958-08-05 | Columbia Broadcasting Syst Inc | Semiconductor device |
US2888736A (en) * | 1955-03-31 | 1959-06-02 | Raytheon Mfg Co | Transistor packages |
US2888619A (en) * | 1955-05-20 | 1959-05-26 | John P Hammes | Semiconductor devices |
US2981873A (en) * | 1957-05-02 | 1961-04-25 | Sarkes Tarzian | Semiconductor device |
DE1059571B (de) * | 1957-08-13 | 1959-06-18 | Siemens Ag | Trockengleichrichteranordnung kleiner Bauweise und Verfahren zu ihrer Herstellung |
US3189801A (en) * | 1960-11-04 | 1965-06-15 | Microwave Ass | Point contact semiconductor devices |
US3189799A (en) * | 1961-06-14 | 1965-06-15 | Microwave Ass | Semiconductor devices and method of fabricating them |
US3243670A (en) * | 1963-09-30 | 1966-03-29 | Int Standard Electric Corp | Mountings for semiconductor devices |
Also Published As
Publication number | Publication date |
---|---|
CH297595A (de) | 1954-03-31 |
DE969491C (de) | 1958-06-12 |
GB728223A (en) | 1955-04-13 |
FR61630E (fr) | 1955-05-16 |
NL162726B (nl) | |
NL82047C (ja) | |
BE507187A (ja) |
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