US2663831A - Selenium dry-disk rectifier - Google Patents
Selenium dry-disk rectifier Download PDFInfo
- Publication number
- US2663831A US2663831A US210288A US21028851A US2663831A US 2663831 A US2663831 A US 2663831A US 210288 A US210288 A US 210288A US 21028851 A US21028851 A US 21028851A US 2663831 A US2663831 A US 2663831A
- Authority
- US
- United States
- Prior art keywords
- selenium
- rectifier
- ageing
- selenium dry
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title description 20
- 229910052711 selenium Inorganic materials 0.000 title description 20
- 239000011669 selenium Substances 0.000 title description 20
- 238000007792 addition Methods 0.000 description 6
- 230000032683 aging Effects 0.000 description 5
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- 239000011630 iodine Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003679 aging effect Effects 0.000 description 1
- 230000003712 anti-aging effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
Definitions
- Selenium dry-disc rectifiers are basically built up in a way that on a base plate of some suitable material such as straight or nickel-plated iron, light metal, etc., there is applied a thin selenium coating on which a metallic back (counter) electrode of suitable composition is deposited.
- Rectifier action is restricted to a thin layer which forms at the surface of the selenium facing the back electrode.
- the overall selenium coating must have a certain minimum thickness to avoid short-circuits between the base plate and the back electrode.
- the selenium layer proper is not identical however with the just mentioned thin rectifying layer forming at the selenium surface towards the back electrode. Strictly speaking, whatever selenium is not used in forming this barrier layer is superfluous, as it but causes a relatively high dropping resistance in the rectifying circuit so from the loss angle this portion of the rectifier should be made with a resistance as low as possible.
- a selenium rectifier comprising a base plate, a layer on said base plate consisting of selenium containing admixtures of a halogen and aluminum oxide in which the aluminum oxide is present in said layer up to milligram-percent of the selenium, and a counter-electrode on said layer.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thermistors And Varistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE293548X | 1950-02-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
US2663831A true US2663831A (en) | 1953-12-22 |
Family
ID=6079896
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US210288A Expired - Lifetime US2663831A (en) | 1950-02-14 | 1951-02-09 | Selenium dry-disk rectifier |
Country Status (5)
Country | Link |
---|---|
US (1) | US2663831A (fr) |
BE (1) | BE501244A (fr) |
CH (1) | CH293548A (fr) |
FR (1) | FR1032278A (fr) |
NL (1) | NL159214B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2888620A (en) * | 1956-04-30 | 1959-05-26 | Westinghouse Air Brake Co | High resistance semiconductor cells |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2137316A (en) * | 1935-02-06 | 1938-11-22 | Philips Nv | Electrode system and method of making same |
US2189576A (en) * | 1935-06-22 | 1940-02-06 | Gen Electric | Dry plate rectifier and method of producing same |
US2453763A (en) * | 1945-07-07 | 1948-11-16 | Ruben Samuel | Selenium rectifier and process for making same |
-
0
- BE BE501244D patent/BE501244A/xx unknown
- NL NL7111058.A patent/NL159214B/xx unknown
-
1951
- 1951-02-06 CH CH293548D patent/CH293548A/de unknown
- 1951-02-09 US US210288A patent/US2663831A/en not_active Expired - Lifetime
- 1951-02-09 FR FR1032278D patent/FR1032278A/fr not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2137316A (en) * | 1935-02-06 | 1938-11-22 | Philips Nv | Electrode system and method of making same |
US2189576A (en) * | 1935-06-22 | 1940-02-06 | Gen Electric | Dry plate rectifier and method of producing same |
US2453763A (en) * | 1945-07-07 | 1948-11-16 | Ruben Samuel | Selenium rectifier and process for making same |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2888620A (en) * | 1956-04-30 | 1959-05-26 | Westinghouse Air Brake Co | High resistance semiconductor cells |
Also Published As
Publication number | Publication date |
---|---|
BE501244A (fr) | |
FR1032278A (fr) | 1953-06-30 |
CH293548A (de) | 1953-09-30 |
NL159214B (nl) |
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