US2449444A - Selenium rectifier - Google Patents
Selenium rectifier Download PDFInfo
- Publication number
- US2449444A US2449444A US706758A US70675846A US2449444A US 2449444 A US2449444 A US 2449444A US 706758 A US706758 A US 706758A US 70675846 A US70675846 A US 70675846A US 2449444 A US2449444 A US 2449444A
- Authority
- US
- United States
- Prior art keywords
- selenium
- rectifier
- barrier layer
- coating
- selenium rectifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052711 selenium Inorganic materials 0.000 title description 27
- 239000011669 selenium Substances 0.000 title description 27
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title description 26
- 230000004888 barrier function Effects 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 229910017053 inorganic salt Inorganic materials 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229940062135 magnesium thiosulfate Drugs 0.000 description 2
- TZKHCTCLSRVZEY-UHFFFAOYSA-L magnesium;dioxido-oxo-sulfanylidene-$l^{6}-sulfane Chemical compound [Mg+2].[O-]S([O-])(=O)=S TZKHCTCLSRVZEY-UHFFFAOYSA-L 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000003346 selenoethers Chemical class 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- OERNJTNJEZOPIA-UHFFFAOYSA-N zirconium nitrate Chemical compound [Zr+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O OERNJTNJEZOPIA-UHFFFAOYSA-N 0.000 description 2
- 229910000925 Cd alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- QFYJRROWSOMHGM-UHFFFAOYSA-L [Zn+2].[O-]S(=O)(=O)S([O-])(=O)=O Chemical compound [Zn+2].[O-]S(=O)(=O)S([O-])(=O)=O QFYJRROWSOMHGM-UHFFFAOYSA-L 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- HSJPMRKMPBAUAU-UHFFFAOYSA-N cerium(3+);trinitrate Chemical compound [Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HSJPMRKMPBAUAU-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229940044658 gallium nitrate Drugs 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical group 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- DHCDFWKWKRSZHF-UHFFFAOYSA-N sulfurothioic S-acid Chemical compound OS(O)(=O)=S DHCDFWKWKRSZHF-UHFFFAOYSA-N 0.000 description 1
- KUKDDTFBSTXDTC-UHFFFAOYSA-N uranium;hexanitrate Chemical compound [U].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O KUKDDTFBSTXDTC-UHFFFAOYSA-N 0.000 description 1
- 229910002007 uranyl nitrate Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/108—Provision of discrete insulating layers, i.e. non-genetic barrier layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D29/00—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor
- B01D29/11—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor with bag, cage, hose, tube, sleeve or like filtering elements
- B01D29/114—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor with bag, cage, hose, tube, sleeve or like filtering elements arranged for inward flow filtration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D29/00—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor
- B01D29/50—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor with multiple filtering elements, characterised by their mutual disposition
- B01D29/52—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor with multiple filtering elements, characterised by their mutual disposition in parallel connection
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D29/00—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor
- B01D29/50—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor with multiple filtering elements, characterised by their mutual disposition
- B01D29/52—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor with multiple filtering elements, characterised by their mutual disposition in parallel connection
- B01D29/54—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor with multiple filtering elements, characterised by their mutual disposition in parallel connection arranged concentrically or coaxially
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D29/00—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor
- B01D29/62—Regenerating the filter material in the filter
- B01D29/66—Regenerating the filter material in the filter by flushing, e.g. counter-current air-bumps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D29/00—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor
- B01D29/76—Handling the filter cake in the filter for purposes other than for regenerating
- B01D29/78—Handling the filter cake in the filter for purposes other than for regenerating for washing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D29/00—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor
- B01D29/76—Handling the filter cake in the filter for purposes other than for regenerating
- B01D29/86—Retarding cake deposition on the filter during the filtration period, e.g. using stirrers
Definitions
- My invention relates to selenium rectiflers and, in particular, relates to anV improved process for forming the blocking or barrier layer in such rectiers.
- barrier layers have been produced by exposing the free surface of the selenium to lthe vapors of certain materialswhile in vacuum, by chemically treating ⁇ the seleniumsurfacegand by depositing a film of organic material on the selenium surface by dipping in a suitable solution. I'he latter has, in general. been vi'ound to be the least Y expensive but difficulty arises because films of organic material are likely to ⁇ decompose at the temperatures at which the'rectiflers are heattreated during lsubsequent steps of the manufacturing process..
- the barrier layer thereafter comprises some carbonaceous material of uncertain composition. Furthermore, if the rectlfier is subjected to high temperatures during the subsequent operation, for example, by reason of the heat generated by losses within the rectifier itself. further decomposition of the organic material in the barrier layer occurs. Thus the maximum temperature, and hence load output of which the rectifier is capable in use is limited because such subsequent decomposition produces changes in the rectifier characteristics which cannot be tolerated.
- One object of my present invention is to produce a barrier layer on the selenium of selenium rectiflers by a dipping process which produces an inorganic film on the free surface of the selenium.
- Another object of my invention is to produce a selenium rectifier which is capable of'operating at higher temperatures than were selenium rectiflers of the prior art.
- Anotherobject of my invention is'to produce .i
- selenium 'rectifier having more stable characteristics both electrically and chemically than did selenium rectiers of the prior art.
- Iproduce the inorganic barrier layer by coating the selenium surface with a solution or ⁇ suspension of a suitable inorganic salt in van organic liquid, and subsequently by driving olf the or- ⁇ ganic material before completion of the rectifier.
- the preferred method ofmakixng this rectifier is .to first produce a coatingof amorphous sele- 2 nium on a. suitable base plate which may, for example, be sheet iron, sand blasted and nickel plated.
- a sheet iron base is selenium-coated by dipping the plate in a bath of the molten selenium and throwing on excess material through centrifugal force by rotating the plate after dipping.
- the base plate thus coated is then submerged in a hot solution or suspension of an inorganic salt-in an organic solvent.
- uranium nitrate zirconium nitrate, magnesiumthiosulfate, gallium nitrate, zinc dithionate, potassium columbate. aluminum ni#- trate and cerous nitrate.
- the most desirable organic solvent to be employed is alcohol or acetone.
- the density of the salt in the solution has not been found by my experiments to date to be critical but may, for example, be that correspondling tov saturation.
- a coating which may be cadmium or a cadmium alloy well known in the art, may then be metalsprayed onto the surface of this coating to form the counter-electrode.
- the unit thus produced is then submitted toa heat treatment compris-l ing annealing for a period ,of about minutes at a temperature of 200 degrees centigrade. This converts'the amorphous selenium into crystalline selenium and at the same time causes the deposited film to produce the desired barrier layer.
- the rectifier is, in accordance with a method well known in the artl subjected to electrical forming by impressing upon it an alternating voltage :of 35 volts for a period of 60 minutes. The rectifier unit is then complete.
- a completed vrectifier thus comprises ay base plate I having on one surface a layer 2 of selenium, the free surface of the layer being covered'with a barrier layer 3 resulting from the deposition of the above-mentioned inorganic salt.
- the free 3 face ofv the barrier layer 3 is coated 'with a counter-electrode I as above described.
- the method o! producing a selenium rec- ⁇ tiiier which comprises ythe step of. coating the free surface of selenium with a solution of magnesium thlosulfate in alcohol.
- the method of producing a selenium rectifier which comprises the step of coating the free ⁇ free surface of selenium with a solution of magnesium thiosulfate in acetone.
Landscapes
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Biotechnology (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE476528D BE476528A (fr) | 1946-10-30 | ||
FR954731D FR954731A (fr) | 1946-10-30 | ||
US706758A US2449444A (en) | 1946-10-30 | 1946-10-30 | Selenium rectifier |
GB26144/47A GB628240A (en) | 1946-10-30 | 1947-09-26 | Improvements in or relating to selenium rectifiers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US706758A US2449444A (en) | 1946-10-30 | 1946-10-30 | Selenium rectifier |
Publications (1)
Publication Number | Publication Date |
---|---|
US2449444A true US2449444A (en) | 1948-09-14 |
Family
ID=24838931
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US706758A Expired - Lifetime US2449444A (en) | 1946-10-30 | 1946-10-30 | Selenium rectifier |
Country Status (4)
Country | Link |
---|---|
US (1) | US2449444A (fr) |
BE (1) | BE476528A (fr) |
FR (1) | FR954731A (fr) |
GB (1) | GB628240A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1219591B (de) * | 1962-04-07 | 1966-06-23 | Licentia Gmbh | Verfahren zum Aufbringen einer gleichmaesigen Thalliumselenidschicht auf die Selenschicht eines Gleichrichters |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2137316A (en) * | 1935-02-06 | 1938-11-22 | Philips Nv | Electrode system and method of making same |
US2139731A (en) * | 1935-06-01 | 1938-12-13 | Philips Nv | Asymmetric electrode system |
US2173249A (en) * | 1935-10-30 | 1939-09-19 | Philips Nv | Asymmetric electrode system |
-
0
- FR FR954731D patent/FR954731A/fr not_active Expired
- BE BE476528D patent/BE476528A/xx unknown
-
1946
- 1946-10-30 US US706758A patent/US2449444A/en not_active Expired - Lifetime
-
1947
- 1947-09-26 GB GB26144/47A patent/GB628240A/en not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2137316A (en) * | 1935-02-06 | 1938-11-22 | Philips Nv | Electrode system and method of making same |
US2139731A (en) * | 1935-06-01 | 1938-12-13 | Philips Nv | Asymmetric electrode system |
US2173249A (en) * | 1935-10-30 | 1939-09-19 | Philips Nv | Asymmetric electrode system |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1219591B (de) * | 1962-04-07 | 1966-06-23 | Licentia Gmbh | Verfahren zum Aufbringen einer gleichmaesigen Thalliumselenidschicht auf die Selenschicht eines Gleichrichters |
Also Published As
Publication number | Publication date |
---|---|
BE476528A (fr) | |
GB628240A (en) | 1949-08-24 |
FR954731A (fr) | 1950-01-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3480473A (en) | Method of producing polycrystalline photovoltaic cells | |
Crowder et al. | Shallow acceptor states in ZnTe and CdTe | |
Gillson Jr et al. | Electroluminescence in zinc sulfide | |
US3670220A (en) | Pn junctions in znse, zns, or zns/znse and semiconductor devices comprising such junctions | |
US2995475A (en) | Fabrication of semiconductor devices | |
US2279187A (en) | Alternating electric current rectifier of the selenium type | |
US3531335A (en) | Method of preparing films of controlled resistivity | |
US2827436A (en) | Method of improving the minority carrier lifetime in a single crystal silicon body | |
US2766508A (en) | Blocking layer for titanium oxide rectifier | |
US3210214A (en) | Electrical conductive patterns | |
US2449444A (en) | Selenium rectifier | |
US2496432A (en) | Selenium rectifier | |
US2488369A (en) | Selenium rectifier | |
US3310443A (en) | Method of forming thin window drifted silicon charged particle detector | |
US2888370A (en) | Photoconductor of lead oxide and method of making | |
US3472711A (en) | Charged particle detector | |
US2699522A (en) | Titanium dioxide rectifier | |
US2554237A (en) | Rectifier | |
US2363555A (en) | Method of producing selenium rectifiers | |
US2685728A (en) | Translating material and method of manufacture | |
US2229807A (en) | Method of manufacturing selenium rectifiers | |
US2479446A (en) | Method of manufacturing small current selenium rectifiers | |
US2821490A (en) | Titanate rectifiers | |
US3438810A (en) | Method of making silicon | |
US3377200A (en) | Process for activating photoconductive films |