US2428043A - Method of manufacturing metal electric rectifiers - Google Patents

Method of manufacturing metal electric rectifiers Download PDF

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Publication number
US2428043A
US2428043A US498753A US49875343A US2428043A US 2428043 A US2428043 A US 2428043A US 498753 A US498753 A US 498753A US 49875343 A US49875343 A US 49875343A US 2428043 A US2428043 A US 2428043A
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US
United States
Prior art keywords
rectifiers
mask
layer
rectifier
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US498753A
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English (en)
Inventor
Searle Arthur Mackenzie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Application granted granted Critical
Publication of US2428043A publication Critical patent/US2428043A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/12Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/942Masking
    • Y10S438/944Shadow

Definitions

  • the present invention relates to the manufacture of metal rectifiers used for electrical alternating current circuits, but more particularly to the manufacture of instrument rectifiers where a very high reverseimpedance may be required.
  • the metal rectifier is well known to consist of Figs. 3 and 4 show the shapes of two spraya metal disc or base to one surface of which is ingmasks used in manufacturing the rectifier.
  • a layer of rectifyin material such as The rectifier shown in Figs. 1 and 2 comprises selenium or copper oxide or the like.
  • a metal a metal base I having on its upper surface a surface electrode is sprayed or otherwise applied 10 layer 2 of rectifying material (selenium, copper to the upper surface of the rectifying material to oxide, etc ,On the upper surface of the rec: make contact therewith.
  • a layer or coating 3 of that the impedance of the rectifier in the backinsulating material which is circular except for ward direction shall be very high, say of the ortwo approximately rectangular areas 5, 6, symder f. 1 megohm, the area of the rectifying mametrically placed on either side of, and project terial must be made very small, for example, of mg towardathecentre of the disc. the order of one. or two square millimetres; and A conducting circular surface electrode 4 of in order to avoid the dilfi'CllltleS associated with smaller cliameter is thensprayed.
  • the present invention seeks to overcome this rectifiers in succession without cleaning the difiiculty by a manufacturing process in which t g deposited n the k W grad y it is not necessary to clean the masks after each enlarge the effective area of the tongues 15 and spraying operation the coatings being so shaped 50 a Unless app p a measures a e taken. that the progressive changes occurring in one the active areas I and 8 of successively manufac mask are compensated by similar changes occurtured rectifiers will increase, and may soon bering in another subsequently used mask. come reat r t he pe i i le limit.
  • the invention accordingly comprises the according to the invention, the surface elecmethod of manufacturing successively a pluraltrode 4 is spr yed on top of th ins ti lay r ity of metal rectifiers which for each rectifier through another mask l0 shown in Fig. havin comprises applying a layer of rectifying matea circular hole equal in diameter to that desired rial to a base, spraying an insulating coating for the electrode.
  • Fig. 1 shows a plan view of a metal rectifier manufactured according to the invention
  • Fig. 2 shows an elevation of the rectifier
  • the surface of the rectifying material may be divided up into more than two active areas, if desired, by providing-a mask 9 havingany number of similar inwardly projecting tongues like l5 and [6, but they should preferably be symmetrically arranged round the centre. With any number of such areas, it will only be necessary to register the masks 9 and I approximately correctly, for with a small amount of eccentricity, although the active areas like and 8 will not all be equal, their sum will not ,be
  • the method of manufacturing successively a pluralityof metal rectifiers which for each rectifier comprises; applying a layer of rectifying material to a base, spraying'an insulating coating througha first mask on to the rectifying layer, and then spraying a conducting coating thereon through a second mask; the masks being so designed and located for spraying that the conduct ing coating makes contact with the rectifying layer over two or more isolated areas, the sum of which is substantially independent of the progressive changes in the-coating areas of successive- Si Ve: rectifiers'which resultfrom the coating of the masks by the spraying material.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Rectifiers (AREA)
US498753A 1942-10-02 1943-08-16 Method of manufacturing metal electric rectifiers Expired - Lifetime US2428043A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB13850/42A GB560501A (en) 1942-10-02 1942-10-02 Improvements in or relating to metal electric rectifiers

Publications (1)

Publication Number Publication Date
US2428043A true US2428043A (en) 1947-09-30

Family

ID=10030483

Family Applications (1)

Application Number Title Priority Date Filing Date
US498753A Expired - Lifetime US2428043A (en) 1942-10-02 1943-08-16 Method of manufacturing metal electric rectifiers

Country Status (3)

Country Link
US (1) US2428043A (xx)
BE (1) BE472808A (xx)
GB (1) GB560501A (xx)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2506604A (en) * 1947-02-01 1950-05-09 Robert P Lokker Method of making electronic coils
US2571167A (en) * 1949-12-31 1951-10-16 Bell Telephone Labor Inc Masking device for crystals
US2592262A (en) * 1948-03-10 1952-04-08 Eastman Kodak Co Slide mount
US2639392A (en) * 1949-12-30 1953-05-19 Bell Telephone Labor Inc Masking device for crystals
US2804580A (en) * 1953-08-13 1957-08-27 Visseaux S A J Unidirectionally conducting elements

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2066611A (en) * 1932-12-10 1937-01-05 G M Lab Inc Selenium cell
US2075377A (en) * 1935-03-13 1937-03-30 Farnsworth Television Inc Means and method of forming discrete areas
US2189580A (en) * 1937-05-29 1940-02-06 Gen Electric Method of making a photoelectric cell

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2066611A (en) * 1932-12-10 1937-01-05 G M Lab Inc Selenium cell
US2075377A (en) * 1935-03-13 1937-03-30 Farnsworth Television Inc Means and method of forming discrete areas
US2189580A (en) * 1937-05-29 1940-02-06 Gen Electric Method of making a photoelectric cell

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2506604A (en) * 1947-02-01 1950-05-09 Robert P Lokker Method of making electronic coils
US2592262A (en) * 1948-03-10 1952-04-08 Eastman Kodak Co Slide mount
US2639392A (en) * 1949-12-30 1953-05-19 Bell Telephone Labor Inc Masking device for crystals
US2571167A (en) * 1949-12-31 1951-10-16 Bell Telephone Labor Inc Masking device for crystals
US2804580A (en) * 1953-08-13 1957-08-27 Visseaux S A J Unidirectionally conducting elements

Also Published As

Publication number Publication date
BE472808A (xx)
GB560501A (en) 1944-04-06

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