US2175016A - Method of producing selenium rectifiers or the like - Google Patents

Method of producing selenium rectifiers or the like Download PDF

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Publication number
US2175016A
US2175016A US146318A US14631837A US2175016A US 2175016 A US2175016 A US 2175016A US 146318 A US146318 A US 146318A US 14631837 A US14631837 A US 14631837A US 2175016 A US2175016 A US 2175016A
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United States
Prior art keywords
semi
carrier electrode
electrode
selenium
conductor layer
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Expired - Lifetime
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US146318A
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English (en)
Inventor
Brunke Fritz
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General Electric Co
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General Electric Co
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Filing date
Publication date
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Publication of US2175016A publication Critical patent/US2175016A/en
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/0431—Application of the selenium or tellurium to the foundation plate

Definitions

  • Frit z Brunke is Attorneg.
  • My invention relates to dry plate rectifiers or like devices such as light-sensitive cells of the type'wherein a semi-conductor layer composed of a material such as selenium or a selenium compound is deposited by a vaporization process on a carrier electrode.
  • the object of the invention is to provide an improved device of the above type and an improved method of forming the semi-conductor layer on the carrier electrode.
  • the selenium type for rectifiers or light-sensitive devices comprise a carrier electrode ghaving thereon a semi-conductor layer of selenium or selenium compound, and a counterelect'rode in contact with the semi conductor layer.
  • I-Ieretofore the semi-conductor layer has been commonly produced by a mechanical application of the selenium or selenium compound to the carrier electrode, for example by melting of the semi-conductor material upon the electrode and flowing the material thereover to form a layer of the required thickness. It has been suggested to produce the semi-conductor layer, for cells of the selenium type for example, by exposing the carrier electrode to the vapor of a semi-conductor material in a high vacuum.
  • Semi-conductor layers produced by the latter or similar vaporization methods are characterized by a more uniform construction and greater degree of emciency as compared with layers proucked by the mechanical methods such as the above-mentioned fusion of the semi-conductor material to the carrier electrode.
  • Light metals, or metal alloys, for example metals or alloys oi the group comprising aluminum, magnesium and beryllium, have proved to be particularly advantageous and efficient materials for the carrier electrode when the vaporization method of iorming the semi-conductor layer is employed.
  • the vaporization method has had the disadvantage, however, that the carrier electrode must be maintained at a temperature at which the semi-conductor material has a low vapor pressure.
  • a condition, not easily controlled, of the semi-conductor material ensues in which the material may be at a given instant either in process of being condensed or of being vaporized, and the thickness and structure of the semiconductor layer obtainable are so greatly dependent on the temperature or the carrier electrode and on the vapor pressure of the semiconductor emerging from the vaporization apparatus that these characteristics 01 the semiconductor layer can not, arbitrarily, under this latter condition, be properly determined.
  • the vaporization process other difliculties connection with the accompanying drawing and its scope will be pcintedout in the appended claims.
  • Figs. 1 and 2 illustrate rectifier cells in which, in accordance with my invention, a semi-conductor layer is mounted between a carrier electrode and a counterelectrode.
  • the rectifier cell or element includes a carrier electrode I, a semi-conductor layer 2, and a counterelectrode 3.
  • the semi-conductor layer is deposited on the carrier electrode by exposing the carrier electrode to the vapor of a semi-conductor material, as usual in the vaporh zatlon process.
  • the vaporizing-of the semiconductor material and the exposing of the carrier electrode i to the vapor or the material, for forming the semi-conductor layer 2, on the carrier electrode take place in an atmosphere of a neutral gas. Nitrogen and the rare gases, helium, neon, argon, krypton, and xenon have proved suitable.
  • the thickness and structure of the semi-conductor layer can be better controlled than by former methods; by varying the pressure of the neutral gas and the temperature of the carrier electrode within wide limits, adjustment can be made for any especial condition arising from the revaporization of the semi-conductor material.
  • the method in accordance with my invention can further be improved by employing a directed stream of the neutral gas, thus hindering the revaporization, of the semi-conductor material which is being deposited onto the carrier electrode.
  • the gas current is preferably caused to flow directly against the carrier electrode, so that thelosses of material become small. Preheating of the current of neutral gas has proved to be of advantage.
  • the method according to the present invention makes it possible that a plurality of semi-conductor materials may be simultaneously vaporized and intermixed without difliculty, the semiconductor layers thus obtained proving very emcient in many cases.
  • the production of such compound layers has been difiicult heretofore by reason of the varying gas pressure of the components in the course of evaporation in a high vacuum, whereas the presence of a neutral gas, asv provided by my present invention, considerably improves and simplifies the method or production of the semi-conductor layer.
  • the use of the neutral gas, and by carefully directing the gas stream against the carrier electrode eificient mixing of the components of the semi-conductor material is assured. I have found that a mixture of selenium and iodine, as illustrated in Figs. 1 and 2, is particularly advantageous.
  • the semi-conductor layer viz., the maintaining of the carrier electrode, upon which the layer is being deposited, at a temperature of over 210- C.
  • the semi-conductor layer 2 is composed, as in Fig. 1, of a mixture of selenium and iodine.
  • the carrier electrode 4 is composed of a metal or metal alloy of the group comprising aluminum, magnesium and beryllium.
  • the semi-conductor layer is deposited on the carrier electrode in the same manner as hereinabove described in connection with the cell or element illustrated in Fig. 1.
  • An element for a dry plate device including a carrier electrode, and a semi-conductor layer on said electrode composed of a mixture of selenium and iodine.
  • An element for a dry plate device including a carrier electrode composed of a material of the group comprising aluminum, magnesium, and beryllium and a semi-conductor layer on said electrode composed of a mixture of selenium and iodine.
  • An element for a dry plate device including a. carrier electrode composed of an alloy of the group of metals comprising aluminum, magnesium and beryllium, and a semi-conductor layer on said electrode composed of a mixture of selenium and iodine.
  • An element for a dry plate rectifier or the like including a carrier electrode, and a semiconductor layer on said electrode composed of a mixture of selenium and iodine.
  • An element for adry plate rectifieror the like including a carrier electrode composed of a material of the group comprising aluminum, magnesium, and beryllium and alloys of said metals, and a semi-conductor layer on said electrode composed of a mixture of selenium and iodine.

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  • Electrodes Of Semiconductors (AREA)
  • Rectifiers (AREA)
US146318A 1936-06-20 1937-06-03 Method of producing selenium rectifiers or the like Expired - Lifetime US2175016A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE476790X 1936-06-20

Publications (1)

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US2175016A true US2175016A (en) 1939-10-03

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US (1) US2175016A (en:Method)
GB (1) GB476790A (en:Method)
NL (1) NL46218C (en:Method)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2438923A (en) * 1943-02-11 1948-04-06 Fed Telephone & Radio Corp Method and means for making selenium elements
US2446468A (en) * 1945-06-14 1948-08-03 Fansteel Metallurgical Corp Selenium rectifiers
US2446467A (en) * 1944-11-11 1948-08-03 Fansteel Metallurgical Corp Dry plate rectifier
US2462906A (en) * 1943-05-01 1949-03-01 Standard Telephones Cables Ltd Manufacture of metal contact rectifiers
US2530110A (en) * 1944-06-02 1950-11-14 Sperry Corp Nonlinear circuit device utilizing germanium
US2642367A (en) * 1947-01-09 1953-06-16 Us Sec War Method of protecting lenses
US2756165A (en) * 1950-09-15 1956-07-24 Dean A Lyon Electrically conducting films and process for forming the same
US2759861A (en) * 1954-09-22 1956-08-21 Bell Telephone Labor Inc Process of making photoconductive compounds
US2914837A (en) * 1952-06-19 1959-12-01 Siemens Ag Method of manufacturing selenium rectifier cells
US3202490A (en) * 1961-03-23 1965-08-24 Csf Sealing structure
CN109273355A (zh) * 2018-06-06 2019-01-25 鹤壁维达科巽电气有限公司 一种硒整流片制备工艺

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1067783A (fr) * 1951-12-18 1954-06-18 Int Standard Electric Corp Surface redresseuse comportant du silicium ou du germanium

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2438923A (en) * 1943-02-11 1948-04-06 Fed Telephone & Radio Corp Method and means for making selenium elements
US2462906A (en) * 1943-05-01 1949-03-01 Standard Telephones Cables Ltd Manufacture of metal contact rectifiers
US2530110A (en) * 1944-06-02 1950-11-14 Sperry Corp Nonlinear circuit device utilizing germanium
US2446467A (en) * 1944-11-11 1948-08-03 Fansteel Metallurgical Corp Dry plate rectifier
US2446468A (en) * 1945-06-14 1948-08-03 Fansteel Metallurgical Corp Selenium rectifiers
US2642367A (en) * 1947-01-09 1953-06-16 Us Sec War Method of protecting lenses
US2756165A (en) * 1950-09-15 1956-07-24 Dean A Lyon Electrically conducting films and process for forming the same
US2914837A (en) * 1952-06-19 1959-12-01 Siemens Ag Method of manufacturing selenium rectifier cells
US2759861A (en) * 1954-09-22 1956-08-21 Bell Telephone Labor Inc Process of making photoconductive compounds
US3202490A (en) * 1961-03-23 1965-08-24 Csf Sealing structure
CN109273355A (zh) * 2018-06-06 2019-01-25 鹤壁维达科巽电气有限公司 一种硒整流片制备工艺
CN109273355B (zh) * 2018-06-06 2022-03-01 鹤壁维达科巽电气有限公司 一种硒整流片制备工艺

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Publication number Publication date
NL46218C (en:Method) 1900-01-01
GB476790A (en) 1937-12-15

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