US20240045140A1 - Waveguide structures - Google Patents
Waveguide structures Download PDFInfo
- Publication number
- US20240045140A1 US20240045140A1 US18/378,788 US202318378788A US2024045140A1 US 20240045140 A1 US20240045140 A1 US 20240045140A1 US 202318378788 A US202318378788 A US 202318378788A US 2024045140 A1 US2024045140 A1 US 2024045140A1
- Authority
- US
- United States
- Prior art keywords
- structures
- waveguide
- metamaterial
- metamaterial structures
- bent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 87
- 239000012212 insulator Substances 0.000 claims abstract description 42
- 238000003780 insertion Methods 0.000 claims abstract description 6
- 230000037431 insertion Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 abstract description 19
- 239000004065 semiconductor Substances 0.000 abstract description 19
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 230000008569 process Effects 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 238000001459 lithography Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
- G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/1213—Constructional arrangements comprising photonic band-gap structures or photonic lattices
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12147—Coupler
Definitions
- the present disclosure relates to semiconductor structures and, more particularly, to waveguide structures with metamaterial structures and methods of manufacture.
- Semiconductor optical waveguide structures are an important component of integrated optoelectronic systems.
- a semiconductor optical waveguide structure is capable of guiding optical waves (e.g., light) with minimal loss of energy by restricting expansion of the light into the surrounding substrate.
- the optical waveguide structure can be used in many different applications including, e.g., semiconductor lasers, optical filters, switches, modulators, isolators, and photodetectors.
- semiconductor material also enables monolithic integration into optoelectronic devices using known fabrication techniques.
- crosstalk occurs between waveguide structures, i.e., between adjacent parallel or orthogonal waveguide channels.
- orthogonal waveguide structures for example, multi-mode interference and self-imaging mechanisms are provided at a crossing of planar waveguide structures to reduce the crosstalk and any loss.
- parallel waveguide structures it is possible to enlarge the separation between adjacent waveguide structures, but the footprint and the packaging density are compromised.
- waveguide bends can be used, but it is difficult to realize significant loss reduction by introducing non-constant curvatures.
- a structure comprises: at least one waveguide structure; and metamaterial structures separated from the at least one waveguide structure by an insulator material, the metamaterial structures being structured to decouple the at least one waveguide structure to simultaneously reduce insertion loss and crosstalk of the at least one waveguide structure.
- a structure comprises: a plurality of planar and parallel waveguide structures; and metamaterial structures separated from the plurality of planar and parallel waveguide structures by an insulator material, the metamaterial structures being at least one of above, below and on a same level of the plurality of planar and parallel waveguide structures.
- a structure comprises: a curved waveguide structure; and metamaterial structures separated from the curved waveguide structure by an insulator material, the metamaterial structures being structured to reduce insertion loss and crosstalk of the curved waveguide structure.
- FIG. 1 shows waveguide structures with metamaterial structures, amongst other features, in accordance with aspects of the present disclosure.
- FIG. 2 shows waveguide structures with metamaterial structures, amongst other features, in accordance with additional aspects of the present disclosure.
- FIG. 3 shows waveguide structures with metamaterial structures, amongst other features, in accordance with additional aspects of the present disclosure.
- FIG. 4 shows waveguide structures with metamaterial structures, amongst other features, in accordance with additional aspects of the present disclosure.
- FIG. 5 shows waveguide structures with metamaterial structures, amongst other features, in accordance with additional aspects of the present disclosure.
- FIG. 6 shows waveguide structures with metamaterial structures, amongst other features, in accordance with additional aspects of the present disclosure.
- FIG. 7 shows waveguide structures with metamaterial structures, amongst other features, in accordance with additional aspects of the present disclosure.
- FIG. 8 shows waveguide structures with metamaterial structures, amongst other features, in accordance with additional aspects of the present disclosure.
- FIG. 9 shows waveguide structures with metamaterial structures, amongst other features, in accordance with additional aspects of the present disclosure.
- FIG. 10 shows waveguide structures with metamaterial structures, amongst other features, in accordance with additional aspects of the present disclosure.
- FIGS. 11 A- 11 E show illustrative fabrication processes of forming a waveguide structure with metamaterial structures in accordance with aspects of the present disclosure.
- the present disclosure relates to semiconductor structures and, more particularly, to waveguide structures with metamaterial structures and methods of manufacture. More specifically, the present disclosure provides waveguide structures with different combinations of metamaterial configurations.
- the use of metamaterial structures enables decoupling of the waveguide structures resulting in simultaneous reduction of insertion loss and crosstalk, compared to typical planar arrays of waveguide structures. More specifically, the use of metamaterial structures with waveguide structures in different configurations will provide significant reduction of the crosstalk between waveguide channels, while also providing low insertion loss and significant improvement of packing density.
- an array of metamaterial structures can be arranged adjacent to the waveguide structure for control of evanescent waves, wherein the array is arranged in plane with the waveguide structure in the same plane or above or below the waveguide layer.
- the waveguide structures of the present disclosure can be manufactured in a number of ways using a number of different tools.
- the methodologies and tools are used to form structures with dimensions in the micrometer and nanometer scale.
- the methodologies, i.e., technologies, employed to manufacture the waveguide structures of the present disclosure have been adopted from integrated circuit (IC) technology.
- the structures are built on wafers and are realized in films of material patterned by photolithographic processes on the top of a wafer.
- the fabrication of the waveguide structures use three basic building blocks: (i) deposition of thin films of material on a substrate, (ii) applying a patterned mask on top of the films by photolithographic imaging, and (iii) etching the films selectively to the mask.
- FIG. 1 shows waveguide structures with metamaterial structures, amongst other features, in accordance with aspects of the present disclosure.
- the structure 10 shown in FIG. 1 includes parallel (and straight) waveguide structures 12 with metamaterial structures 14 between the waveguide structures 12 .
- the waveguide structures 12 are planar and do not touch one another and, preferably, are separated by insulator material 16 , e.g., oxide material.
- the metamaterial structures 14 can be separated by air gaps between the metamaterial structures.
- the waveguide structures 12 and the metamaterial structures 14 are formed at a same level (in plane) using the same semiconductor material and, preferably, silicon-on-insulator material as described further in FIGS. 11 A- 11 E .
- the waveguide structures 12 can be composed of any semiconductor material which is suitable for reflecting and propagating optical signals with minimal loss.
- the waveguide structures 12 and metamaterial structures 14 can be composed of Si.
- the waveguide structures 12 and metamaterial structures 14 can also be different combinations of Si and SiN.
- the metamaterial structures 14 are comprised of an array of cylinders patterned between and around the waveguide structures 12 .
- the metamaterial structures 14 can be an array of rods or other geometric shapes.
- the metamaterial structures 14 can be cubes, cuboids, etc., patterned from SiN (or Si material).
- the individual geometric shapes of the metamaterial structures 14 can be of the same size and pitch or of a different size and pitch, depending on the designed performance parameters of the waveguide structures 12 .
- the dimension (radius) of individual metamaterial structures 14 can be approximately 0.01* ⁇ to 0.45* ⁇ and the dimension of the waveguide structures 12 can be approximately 0.15* ⁇ to 8* ⁇ , with a gap or waveguide separation of approximately 0.05* ⁇ to 3* ⁇ .
- the metamaterial structures 14 can be separated by air gaps between the metamaterial structures.
- FIG. 2 shows waveguide structures with metamaterial structures in accordance with additional aspects of the present disclosure.
- the waveguide structures 12 are composed of silicon-on-insulator material and the metamaterial structures 14 a are be composed of SiN.
- the silicon-on-insulator material is provided on a lower (e.g., first) level of the device and the SiN metamaterial structures 14 a is provided above or on an upper level of the device.
- the metamaterial structures 14 can be formed from any geometric shape, e.g., rod, cylinder, cube, etc.
- the waveguide structures 12 and metamaterial structures 14 do not touch one another and, preferably, are separated by insulator material 16 , e.g., oxide material.
- the metamaterial structures 14 can be separated by air gaps between the metamaterial structures.
- FIG. 3 shows waveguide structures with metamaterial structures in accordance with yet additional aspects of the present disclosure.
- the metamaterial structures 14 can be composed of silicon-on-insulator material and the waveguide structures 12 a can be composed of SiN.
- the metamaterial structures 14 are provided on a lower level of the device, whereas, the waveguide structures 12 a are provided above and/or on an upper level of the device.
- the metamaterial structures 14 can be formed from any geometric shape.
- the waveguide structures 12 a and metamaterial structures 14 do not touch one another and, preferably, are separated by insulator material 16 , e.g., oxide material.
- the metamaterial structures 14 can be separated by air gaps between the metamaterial structures.
- the metamaterial structures 14 and the waveguide structure 12 b are composed of silicon-on-insulator material, on a same level (in plane) of the device.
- the waveguide structure 12 b is bent or has a curvature, with the metamaterial structures 14 on both sides (e.g., opposing side) of the waveguide structure 12 b .
- the metamaterial structures 14 can completely or partially surround the waveguide structure 12 b.
- the waveguide structure 12 b can extend from an end of any of the parallel (and straight) waveguide structures 12 of FIG. 1 , for example.
- the metamaterial structures 14 can be any geometric shape.
- the waveguide structure 12 b and metamaterial structures 14 do not touch one another and, preferably, are separated by insulator material 16 , e.g., oxide material.
- the metamaterial structures 14 can be separated by air gaps between the metamaterial structures.
- the structure 10 d includes metamaterial structures 14 a composed of SiN material and the waveguide structure 12 b composed of silicon-on-insulator material, on a lower level.
- the waveguide structure 12 b is bent or has a curvature, with the metamaterial structures 14 a above the waveguide structure 12 b .
- the metamaterial structures 14 a can be any geometric shape.
- the waveguide structure 12 b and metamaterial structures 14 a do not touch one another and, preferably, are separated by insulator material 16 , e.g., oxide material.
- the metamaterial structures 14 a can be separated by air gaps between the metamaterial structures.
- the structure 10 e includes the metamaterial structures 14 composed of silicon-on-insulator material and the waveguide structure 12 c composed of SiN material, on an upper level.
- the waveguide structure 12 c is bent or has a curvature, with the metamaterial structures 14 below the waveguide structure 12 c .
- the metamaterial structures 14 can be any geometric shape.
- the waveguide structure 12 c and metamaterial structures 14 do not touch one another and, preferably, are separated by insulator material 16 , e.g., oxide material.
- the metamaterial structures 14 can be separated by air gaps between the metamaterial structures.
- the structure 10 f includes parallel (and straight) waveguide structures 12 with metamaterial structures 14 between the waveguide structures 12 and metamaterial structures 14 a formed above the waveguide structures 12 .
- the waveguide structures 12 and metamaterial structures 14 a are composed of the same material, e.g., silicon-on-insulator material; whereas, the metamaterial structures 14 a are composed of a different material, e.g., SiN material, above the waveguide structures 12 and metamaterial structures 14 .
- the waveguide structures 12 and metamaterial structures 14 , 14 a do not touch one another and, preferably, are separated by insulator material 16 , e.g., oxide material.
- the waveguide structures 12 are planar waveguide structures and the metamaterial structures 14 , 14 a can be any geometric shape. In further embodiments, the metamaterial structures 14 , 14 a can be separated by air gaps between the metamaterial structures.
- the structure 10 g includes parallel (and straight) waveguide structures 12 with two levels of metamaterial 14 a , 14 c above the waveguide structures 12 .
- the waveguide structures 12 are composed of, e.g., silicon-on-insulator material; whereas, the metamaterial structures 14 a , 14 c are composed of a different material, e.g., SiN material, above the waveguide structures 12 .
- the metamaterial structures 14 a , 14 c are formed on different levels above the waveguide structures 12 .
- the waveguide structures 12 and metamaterial 14 a , 14 c do not touch one another and, preferably, are separated by insulator material 16 , e.g., oxide material.
- the waveguide structures 12 are planar waveguide structures and the metamaterial structures 14 a , 14 c can be any geometric shape. In further embodiments, the metamaterial structures 14 , 14 c can be separated by air gaps between the metamaterial structures.
- the structure 10 h includes parallel (and straight) waveguide structures 12 a with metamaterial structures 14 , 14 a above and below the waveguide structures 12 a .
- the metamaterial structures 14 are composed of, e.g., silicon-on-insulator material; whereas, the waveguide structures 12 a and the metamaterial structures 14 a are composed of a different material, e.g., SiN material, above the metamaterial structures 14 .
- the waveguide structures 12 a and the metamaterial structures 14 a can be on a same or different level, composed of the same material, e.g., SiN. For example, as shown in FIG.
- the metamaterial structures 14 a are shown to be formed above the waveguide structures 12 a .
- the waveguide structures 12 a and metamaterial structures 14 , 14 a do not touch one another and, preferably, are separated by insulator material 16 , e.g., oxide material.
- the waveguide structures 12 a are planar waveguide structures and the metamaterial structures 14 , 14 a can be any geometric shape.
- the metamaterial structures 14 , 14 a can be separated by air gaps between the metamaterial structures.
- the structure 10 i includes curved or bent waveguide structures 12 b and metamaterial structures 14 d are composed of silicon-on-insulator material, on a same level (in plane) of the device. It is contemplated that the curved or bent waveguide structures 12 b and metamaterial structures 14 d can be composed of Si material. In this embodiment, the metamaterial structures 14 d are bent and are provided with holes or openings 18 , which are fabricated using conventional lithography and etching processes. The openings 18 can be filled with insulator material 16 . Moreover, in this embodiment, the metamaterial structures 14 d are provided on both sides of the waveguide structure 12 b and, preferably, have the same radius of curvature as the waveguide structure 12 b.
- the waveguide structure 12 b can extend from an end of any of the parallel (and straight) waveguide structures 12 .
- the waveguide structure 12 b and metamaterial structures 14 d do not touch one another and, preferably, are separated by insulator material 16 , e.g., oxide material.
- FIGS. 11 A- 11 E show illustrative fabrication processes of forming a waveguide structure with metamaterial structures in accordance with aspects of the present disclosure.
- a semiconductor-on-insulator wafer 20 comprises a wafer 20 a , an insulator material 20 b on the wafer 20 a and semiconductor material 20 c on the insulator material 20 b .
- the insulator material 20 b is a buried oxide layer (BOX).
- the semiconductor material 20 c can be patterned using conventional lithography and etching processes to form the waveguide structures and/or the metamaterial structures.
- the conventional lithography and etching processes can also be used for form openings (e.g., openings 18 ) in the waveguide structures.
- a resist formed over the material 20 c is exposed to energy (light) to form a pattern (opening).
- An etching process with a selective chemistry e.g., reactive ion etching (RIE)
- RIE reactive ion etching
- the resist can then be removed by a conventional oxygen ashing process or other known stripants.
- insulator material 16 is deposited over the patterned semiconductor material, e.g., guide structures 12 , 12 b , 14 d and/or the metamaterial structures 14 .
- the insulator material 16 can be an oxide material deposited by any conventional deposition processes, e.g., CVD processes.
- appropriate semiconductor material (SiN) 24 is deposited on the insulator material 16 , over the patterned waveguide structures 12 , 12 b , 14 d and/or the metamaterial structures 14 .
- the semiconductor material 24 can be deposited by any conventional deposition process, e.g., CVD processes.
- Further insulator material 16 a and semiconductor material (SiN) 28 can be deposited on the semiconductor material 24 .
- the semiconductor material (SiN) 28 can be patterned to form structure 30 using conventional lithography and etching processes as described herein.
- the structure 30 can be fabricated into the waveguide structures 12 b and/or the metamaterial structures 14 a , 14 c , depending on the embodiment described above.
- insulator material 16 b is deposited over the patterned semiconductor material 30 .
- the insulator material 16 can be an oxide material deposited by any conventional deposition processes, e.g., CVD processes.
- the insulator material 16 can be representative of back end of the line (BEOL) structures.
- the method(s) as described above is used in the fabrication of integrated circuit chips.
- the resulting integrated circuit chips can be distributed by the fabricator in raw wafer form (that is, as a single wafer that has multiple unpackaged chips), as a bare die, or in a packaged form.
- the chip is mounted in a single chip package (such as a plastic carrier, with leads that are affixed to a motherboard or other higher level carrier) or in a multichip package (such as a ceramic carrier that has either or both surface interconnections or buried interconnections).
- the chip is then integrated with other chips, discrete circuit elements, and/or other signal processing devices as part of either (a) an intermediate product, such as a motherboard, or (b) an end product.
- the end product can be any product that includes integrated circuit chips, ranging from toys and other low-end applications to advanced computer products having a display, a keyboard or other input device, and a central processor.
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to waveguide structures with metamaterial structures and methods of manufacture. The structure includes: at least one waveguide structure; and metamaterial structures separated from the at least one waveguide structure by an insulator material, the metamaterial structures being structured to decouple the at least one waveguide structure to simultaneously reduce insertion loss and crosstalk of the at least one waveguide structure.
Description
- The present disclosure relates to semiconductor structures and, more particularly, to waveguide structures with metamaterial structures and methods of manufacture.
- Semiconductor optical waveguide structures (e.g., photonic components) are an important component of integrated optoelectronic systems. For example, a semiconductor optical waveguide structure is capable of guiding optical waves (e.g., light) with minimal loss of energy by restricting expansion of the light into the surrounding substrate. The optical waveguide structure can be used in many different applications including, e.g., semiconductor lasers, optical filters, switches, modulators, isolators, and photodetectors. The use of semiconductor material also enables monolithic integration into optoelectronic devices using known fabrication techniques.
- In waveguide arrays, crosstalk occurs between waveguide structures, i.e., between adjacent parallel or orthogonal waveguide channels. In the orthogonal waveguide structures, for example, multi-mode interference and self-imaging mechanisms are provided at a crossing of planar waveguide structures to reduce the crosstalk and any loss. On the other hand, in parallel waveguide structures, it is possible to enlarge the separation between adjacent waveguide structures, but the footprint and the packaging density are compromised. Also, waveguide bends can be used, but it is difficult to realize significant loss reduction by introducing non-constant curvatures.
- In an aspect of the disclosure, a structure comprises: at least one waveguide structure; and metamaterial structures separated from the at least one waveguide structure by an insulator material, the metamaterial structures being structured to decouple the at least one waveguide structure to simultaneously reduce insertion loss and crosstalk of the at least one waveguide structure.
- In an aspect of the disclosure, a structure comprises: a plurality of planar and parallel waveguide structures; and metamaterial structures separated from the plurality of planar and parallel waveguide structures by an insulator material, the metamaterial structures being at least one of above, below and on a same level of the plurality of planar and parallel waveguide structures.
- In an aspect of the disclosure, a structure comprises: a curved waveguide structure; and metamaterial structures separated from the curved waveguide structure by an insulator material, the metamaterial structures being structured to reduce insertion loss and crosstalk of the curved waveguide structure.
- The present disclosure is described in the detailed description which follows, in reference to the noted plurality of drawings by way of non-limiting examples of exemplary embodiments of the present disclosure.
-
FIG. 1 shows waveguide structures with metamaterial structures, amongst other features, in accordance with aspects of the present disclosure. -
FIG. 2 shows waveguide structures with metamaterial structures, amongst other features, in accordance with additional aspects of the present disclosure. -
FIG. 3 shows waveguide structures with metamaterial structures, amongst other features, in accordance with additional aspects of the present disclosure. -
FIG. 4 shows waveguide structures with metamaterial structures, amongst other features, in accordance with additional aspects of the present disclosure. -
FIG. 5 shows waveguide structures with metamaterial structures, amongst other features, in accordance with additional aspects of the present disclosure. -
FIG. 6 shows waveguide structures with metamaterial structures, amongst other features, in accordance with additional aspects of the present disclosure. -
FIG. 7 shows waveguide structures with metamaterial structures, amongst other features, in accordance with additional aspects of the present disclosure. -
FIG. 8 shows waveguide structures with metamaterial structures, amongst other features, in accordance with additional aspects of the present disclosure. -
FIG. 9 shows waveguide structures with metamaterial structures, amongst other features, in accordance with additional aspects of the present disclosure. -
FIG. 10 shows waveguide structures with metamaterial structures, amongst other features, in accordance with additional aspects of the present disclosure. -
FIGS. 11A-11E show illustrative fabrication processes of forming a waveguide structure with metamaterial structures in accordance with aspects of the present disclosure. - The present disclosure relates to semiconductor structures and, more particularly, to waveguide structures with metamaterial structures and methods of manufacture. More specifically, the present disclosure provides waveguide structures with different combinations of metamaterial configurations. Advantageously, the use of metamaterial structures enables decoupling of the waveguide structures resulting in simultaneous reduction of insertion loss and crosstalk, compared to typical planar arrays of waveguide structures. More specifically, the use of metamaterial structures with waveguide structures in different configurations will provide significant reduction of the crosstalk between waveguide channels, while also providing low insertion loss and significant improvement of packing density.
- In embodiments, an array of metamaterial structures can be arranged adjacent to the waveguide structure for control of evanescent waves, wherein the array is arranged in plane with the waveguide structure in the same plane or above or below the waveguide layer. By implementing the waveguide structures with different combinations of metamaterial configurations it is possible to reduce the inter-channel crosstalk by about 5 dB reduction, compared to typical waveguide structures which do not implement the use of the different metamaterial combinations described herein. Further reduction is possible through optimization of the metamaterial configuration to further control evanescent waves, which is also associated with the dimension and confinement of the waveguide channel. In addition, by implementing the configurations described herein, bending loss can be reduced to −1.4 dB, providing an improved transmission to >70%. Further reduction is possible through optimization of the configuration of the metamaterial structures to further control the tails of the evanescent waves supported by the bends of the waveguide structures.
- The waveguide structures of the present disclosure can be manufactured in a number of ways using a number of different tools. In general, though, the methodologies and tools are used to form structures with dimensions in the micrometer and nanometer scale. The methodologies, i.e., technologies, employed to manufacture the waveguide structures of the present disclosure have been adopted from integrated circuit (IC) technology. For example, the structures are built on wafers and are realized in films of material patterned by photolithographic processes on the top of a wafer. In particular, the fabrication of the waveguide structures use three basic building blocks: (i) deposition of thin films of material on a substrate, (ii) applying a patterned mask on top of the films by photolithographic imaging, and (iii) etching the films selectively to the mask.
-
FIG. 1 shows waveguide structures with metamaterial structures, amongst other features, in accordance with aspects of the present disclosure. Specifically, thestructure 10 shown inFIG. 1 includes parallel (and straight)waveguide structures 12 withmetamaterial structures 14 between thewaveguide structures 12. As in each of the embodiments, thewaveguide structures 12 are planar and do not touch one another and, preferably, are separated byinsulator material 16, e.g., oxide material. In further embodiments, themetamaterial structures 14 can be separated by air gaps between the metamaterial structures. - In
FIG. 1 , for example, thewaveguide structures 12 and themetamaterial structures 14 are formed at a same level (in plane) using the same semiconductor material and, preferably, silicon-on-insulator material as described further inFIGS. 11A-11E . In alternative embodiments, thewaveguide structures 12 can be composed of any semiconductor material which is suitable for reflecting and propagating optical signals with minimal loss. For example, thewaveguide structures 12 andmetamaterial structures 14 can be composed of Si. As described in more detail, thewaveguide structures 12 andmetamaterial structures 14 can also be different combinations of Si and SiN. - Still referring to
FIG. 1 , themetamaterial structures 14 are comprised of an array of cylinders patterned between and around thewaveguide structures 12. In alternative embodiments, themetamaterial structures 14 can be an array of rods or other geometric shapes. For example, themetamaterial structures 14 can be cubes, cuboids, etc., patterned from SiN (or Si material). The individual geometric shapes of themetamaterial structures 14 can be of the same size and pitch or of a different size and pitch, depending on the designed performance parameters of thewaveguide structures 12. For example, as in any of the embodiments described herein, the dimension (radius) of individual metamaterial structures 14 (e.g., rods) can be approximately 0.01*λ to 0.45*λ and the dimension of thewaveguide structures 12 can be approximately 0.15*λ to 8*λ, with a gap or waveguide separation of approximately 0.05*λ to 3*λ. In further embodiments, themetamaterial structures 14 can be separated by air gaps between the metamaterial structures. -
FIG. 2 shows waveguide structures with metamaterial structures in accordance with additional aspects of the present disclosure. In thestructure 10 a ofFIG. 2 , thewaveguide structures 12 are composed of silicon-on-insulator material and themetamaterial structures 14 a are be composed of SiN. In this implementation, the silicon-on-insulator material is provided on a lower (e.g., first) level of the device and theSiN metamaterial structures 14 a is provided above or on an upper level of the device. As described with respect toFIG. 1 , themetamaterial structures 14 can be formed from any geometric shape, e.g., rod, cylinder, cube, etc. Thewaveguide structures 12 andmetamaterial structures 14 do not touch one another and, preferably, are separated byinsulator material 16, e.g., oxide material. In further embodiments, themetamaterial structures 14 can be separated by air gaps between the metamaterial structures. -
FIG. 3 shows waveguide structures with metamaterial structures in accordance with yet additional aspects of the present disclosure. In thestructure 10 b ofFIG. 3 , themetamaterial structures 14 can be composed of silicon-on-insulator material and thewaveguide structures 12 a can be composed of SiN. In this implementation, themetamaterial structures 14 are provided on a lower level of the device, whereas, thewaveguide structures 12 a are provided above and/or on an upper level of the device. As described with respect toFIG. 1 , themetamaterial structures 14 can be formed from any geometric shape. Further, as in each of the embodiments, thewaveguide structures 12 a andmetamaterial structures 14 do not touch one another and, preferably, are separated byinsulator material 16, e.g., oxide material. In further embodiments, themetamaterial structures 14 can be separated by air gaps between the metamaterial structures. - In the
structure 10 c ofFIG. 4 , themetamaterial structures 14 and thewaveguide structure 12 b are composed of silicon-on-insulator material, on a same level (in plane) of the device. In this embodiment, though, thewaveguide structure 12 b is bent or has a curvature, with themetamaterial structures 14 on both sides (e.g., opposing side) of thewaveguide structure 12 b. In embodiments, themetamaterial structures 14 can completely or partially surround thewaveguide structure 12 b. - As in each of the embodiments showing curved or bent waveguide structures, it should be understood by those of ordinary skill in the art that the
waveguide structure 12 b can extend from an end of any of the parallel (and straight)waveguide structures 12 ofFIG. 1 , for example. Moreover, as described with respect toFIG. 1 , themetamaterial structures 14 can be any geometric shape. Also, as in each of the embodiments, thewaveguide structure 12 b andmetamaterial structures 14 do not touch one another and, preferably, are separated byinsulator material 16, e.g., oxide material. In further embodiments, themetamaterial structures 14 can be separated by air gaps between the metamaterial structures. - In
FIG. 5 , thestructure 10 d includesmetamaterial structures 14 a composed of SiN material and thewaveguide structure 12 b composed of silicon-on-insulator material, on a lower level. In this embodiment, thewaveguide structure 12 b is bent or has a curvature, with themetamaterial structures 14 a above thewaveguide structure 12 b. As described with respect toFIG. 1 , themetamaterial structures 14 a can be any geometric shape. Also, as in each of the embodiments, thewaveguide structure 12 b andmetamaterial structures 14 a do not touch one another and, preferably, are separated byinsulator material 16, e.g., oxide material. In further embodiments, themetamaterial structures 14 a can be separated by air gaps between the metamaterial structures. - In
FIG. 6 , thestructure 10 e includes themetamaterial structures 14 composed of silicon-on-insulator material and thewaveguide structure 12 c composed of SiN material, on an upper level. In this embodiment, thewaveguide structure 12 c is bent or has a curvature, with themetamaterial structures 14 below thewaveguide structure 12 c. As described with respect toFIG. 1 , themetamaterial structures 14 can be any geometric shape. Also, as in each of the embodiments, thewaveguide structure 12 c andmetamaterial structures 14 do not touch one another and, preferably, are separated byinsulator material 16, e.g., oxide material. In further embodiments, themetamaterial structures 14 can be separated by air gaps between the metamaterial structures. - In
FIG. 7 , thestructure 10 f includes parallel (and straight)waveguide structures 12 withmetamaterial structures 14 between thewaveguide structures 12 andmetamaterial structures 14 a formed above thewaveguide structures 12. In this embodiment, thewaveguide structures 12 andmetamaterial structures 14 a are composed of the same material, e.g., silicon-on-insulator material; whereas, themetamaterial structures 14 a are composed of a different material, e.g., SiN material, above thewaveguide structures 12 andmetamaterial structures 14. In embodiments, thewaveguide structures 12 andmetamaterial structures insulator material 16, e.g., oxide material. As further shown inFIG. 7 , thewaveguide structures 12 are planar waveguide structures and themetamaterial structures metamaterial structures - In
FIG. 8 , thestructure 10 g includes parallel (and straight)waveguide structures 12 with two levels ofmetamaterial waveguide structures 12. In this embodiment, thewaveguide structures 12 are composed of, e.g., silicon-on-insulator material; whereas, themetamaterial structures waveguide structures 12. In embodiments, themetamaterial structures waveguide structures 12. In further embodiments, thewaveguide structures 12 andmetamaterial insulator material 16, e.g., oxide material. As further shown inFIG. 8 , thewaveguide structures 12 are planar waveguide structures and themetamaterial structures metamaterial structures - In
FIG. 9 , thestructure 10 h includes parallel (and straight)waveguide structures 12 a withmetamaterial structures waveguide structures 12 a. In this embodiment, themetamaterial structures 14 are composed of, e.g., silicon-on-insulator material; whereas, thewaveguide structures 12 a and themetamaterial structures 14 a are composed of a different material, e.g., SiN material, above themetamaterial structures 14. In embodiments, thewaveguide structures 12 a and themetamaterial structures 14 a can be on a same or different level, composed of the same material, e.g., SiN. For example, as shown inFIG. 9 , themetamaterial structures 14 a are shown to be formed above thewaveguide structures 12 a. In further embodiments, thewaveguide structures 12 a andmetamaterial structures insulator material 16, e.g., oxide material. As further shown inFIG. 9 , thewaveguide structures 12 a are planar waveguide structures and themetamaterial structures metamaterial structures - As shown in
FIG. 10 , thestructure 10 i includes curved orbent waveguide structures 12 b andmetamaterial structures 14 d are composed of silicon-on-insulator material, on a same level (in plane) of the device. It is contemplated that the curved orbent waveguide structures 12 b andmetamaterial structures 14 d can be composed of Si material. In this embodiment, themetamaterial structures 14 d are bent and are provided with holes oropenings 18, which are fabricated using conventional lithography and etching processes. Theopenings 18 can be filled withinsulator material 16. Moreover, in this embodiment, themetamaterial structures 14 d are provided on both sides of thewaveguide structure 12 b and, preferably, have the same radius of curvature as thewaveguide structure 12 b. - As in each of the embodiments showing curved or bent waveguide structures, it should be understood by those of ordinary skill in the art that the
waveguide structure 12 b can extend from an end of any of the parallel (and straight)waveguide structures 12. Also, as in each of the embodiments, thewaveguide structure 12 b andmetamaterial structures 14 d do not touch one another and, preferably, are separated byinsulator material 16, e.g., oxide material. -
FIGS. 11A-11E show illustrative fabrication processes of forming a waveguide structure with metamaterial structures in accordance with aspects of the present disclosure. As shown inFIG. 11A , a semiconductor-on-insulator wafer 20 comprises awafer 20 a, aninsulator material 20 b on thewafer 20 a andsemiconductor material 20 c on theinsulator material 20 b. Theinsulator material 20 b is a buried oxide layer (BOX). Thesemiconductor material 20 c can be patterned using conventional lithography and etching processes to form the waveguide structures and/or the metamaterial structures. The conventional lithography and etching processes can also be used for form openings (e.g., openings 18) in the waveguide structures. - By way of example, in
FIG. 11A , a resist formed over the material 20 c is exposed to energy (light) to form a pattern (opening). An etching process with a selective chemistry, e.g., reactive ion etching (RIE), will be used to the patterned material (e.g., semiconductor material to form thewaveguide structures metamaterial structures 14 through the openings of the resist. The resist can then be removed by a conventional oxygen ashing process or other known stripants. - As shown in
FIG. 11B , following the resist removal,insulator material 16 is deposited over the patterned semiconductor material, e.g., guidestructures metamaterial structures 14. Theinsulator material 16 can be an oxide material deposited by any conventional deposition processes, e.g., CVD processes. - In
FIG. 11C , appropriate semiconductor material (SiN) 24 is deposited on theinsulator material 16, over the patternedwaveguide structures metamaterial structures 14. Thesemiconductor material 24 can be deposited by any conventional deposition process, e.g., CVD processes.Further insulator material 16 a and semiconductor material (SiN) 28 can be deposited on thesemiconductor material 24. Thereafter, as shown inFIG. 11D , the semiconductor material (SiN) 28 can be patterned to formstructure 30 using conventional lithography and etching processes as described herein. As should be understood by those of skill in the art, thestructure 30 can be fabricated into thewaveguide structures 12 b and/or themetamaterial structures FIG. 11E ,insulator material 16 b is deposited over the patternedsemiconductor material 30. Theinsulator material 16 can be an oxide material deposited by any conventional deposition processes, e.g., CVD processes. In embodiments, theinsulator material 16 can be representative of back end of the line (BEOL) structures. - The method(s) as described above is used in the fabrication of integrated circuit chips. The resulting integrated circuit chips can be distributed by the fabricator in raw wafer form (that is, as a single wafer that has multiple unpackaged chips), as a bare die, or in a packaged form. In the latter case the chip is mounted in a single chip package (such as a plastic carrier, with leads that are affixed to a motherboard or other higher level carrier) or in a multichip package (such as a ceramic carrier that has either or both surface interconnections or buried interconnections). In any case the chip is then integrated with other chips, discrete circuit elements, and/or other signal processing devices as part of either (a) an intermediate product, such as a motherboard, or (b) an end product. The end product can be any product that includes integrated circuit chips, ranging from toys and other low-end applications to advanced computer products having a display, a keyboard or other input device, and a central processor.
- The descriptions of the various embodiments of the present disclosure have been presented for purposes of illustration, but are not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein was chosen to best explain the principles of the embodiments, the practical application or technical improvement over technologies found in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein.
Claims (20)
1. A structure comprising:
at least one bent waveguide structure; and
metamaterial structures separated from the at least one bent waveguide structure by an insulator material, the metamaterial structures being structured to decouple the at least one waveguide structure to simultaneously reduce insertion loss and crosstalk of the at least one bent waveguide structure.
2. The structure of claim 1 , wherein the metamaterial structures are bent structures with openings, the metamaterial structures being on opposing sides of the at least one bent waveguide structure.
3. The structure of claim 1 , wherein the metamaterial structures are above the at least one bent waveguide structure.
4. The structure of claim 1 , wherein the metamaterial structures are below the at least one bent waveguide structure.
5. The structure of claim 1 , wherein the metamaterial structures are on sides of the at least one bent waveguide structure.
6. The structure of claim 5 , wherein the metamaterial structures and the at least one bent waveguide structure are composed of silicon-on-insulator material, on a same level of a device.
7. The structure of claim 5 , wherein the metamaterial structures and the at least one bent waveguide structure are composed of Si material.
8. The structure of claim 2 , wherein the openings are filled with insulator material.
9. The structure of claim 5 , wherein the metamaterial structures and the at least one bent waveguide structure have a same radius of curvature.
10. The structure of claim 5 , wherein the metamaterial structures and the at least one bent waveguide structure are parallel.
11. The structure of claim 1 , wherein the at least one bent waveguide structure and the metamaterial structures are of different materials.
12. A structure comprising:
a curved waveguide structure; and
bent metamaterial structures with openings, the bent metamaterial structures being separated from the curved waveguide structure by an insulator material.
13. The structure of claim 12 , wherein the curved waveguide structure and the bent metamaterial structures are composed of a same material.
14. The structure of claim 12 , wherein the bent metamaterial structures are on opposing sides of the curved waveguide structure.
15. The structure of claim 12 , wherein the bent metamaterial structures are at a same level as the curved waveguide structure.
16. A structure comprising:
a curved waveguide structure; and
metamaterial structures separated from the curved waveguide structure by an insulator material, the metamaterial structures being above or below the curved waveguide structures.
17. The structure of claim 16 , wherein the curved waveguide structure and the metamaterial structures are composed of a same material.
18. The structure of claim 17 , wherein the metamaterial structures are above the curved waveguide structures.
19. The structure of claim 16 , wherein the curved waveguide structure and the metamaterial structures are composed of different material.
20. The structure of claim 19 , wherein the metamaterial structures are below the curved waveguide structures.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18/378,788 US20240045140A1 (en) | 2019-08-23 | 2023-10-11 | Waveguide structures |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/549,466 US11163114B2 (en) | 2019-08-23 | 2019-08-23 | Waveguide structures |
US17/462,491 US11822122B2 (en) | 2019-08-23 | 2021-08-31 | Waveguide structures |
US18/378,788 US20240045140A1 (en) | 2019-08-23 | 2023-10-11 | Waveguide structures |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US17/462,491 Division US11822122B2 (en) | 2019-08-23 | 2021-08-31 | Waveguide structures |
Publications (1)
Publication Number | Publication Date |
---|---|
US20240045140A1 true US20240045140A1 (en) | 2024-02-08 |
Family
ID=74647194
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/549,466 Active US11163114B2 (en) | 2019-08-23 | 2019-08-23 | Waveguide structures |
US17/462,491 Active US11822122B2 (en) | 2019-08-23 | 2021-08-31 | Waveguide structures |
US18/378,788 Pending US20240045140A1 (en) | 2019-08-23 | 2023-10-11 | Waveguide structures |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/549,466 Active US11163114B2 (en) | 2019-08-23 | 2019-08-23 | Waveguide structures |
US17/462,491 Active US11822122B2 (en) | 2019-08-23 | 2021-08-31 | Waveguide structures |
Country Status (1)
Country | Link |
---|---|
US (3) | US11163114B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117561655A (en) * | 2021-07-01 | 2024-02-13 | 深圳市速腾聚创科技有限公司 | Frequency modulation nonlinear calibration device and calibration method |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69430361D1 (en) * | 1993-01-08 | 2002-05-16 | Massachusetts Inst Technology | LOW-LOSS OPTICAL AND OPTOELECTRONIC INTEGRATED CIRCUITS |
US6674949B2 (en) * | 2000-08-15 | 2004-01-06 | Corning Incorporated | Active photonic crystal waveguide device and method |
JP2002303836A (en) * | 2001-04-04 | 2002-10-18 | Nec Corp | Optical switch with photonic crystal structure |
US6542654B1 (en) * | 2001-07-10 | 2003-04-01 | Optical Switch Corporation | Reconfigurable optical switch and method |
US20030123827A1 (en) * | 2001-12-28 | 2003-07-03 | Xtalight, Inc. | Systems and methods of manufacturing integrated photonic circuit devices |
WO2003062882A2 (en) * | 2002-01-22 | 2003-07-31 | University Of Delaware | Electro-optical switching using coupled photonic crystal waveguides |
KR100518835B1 (en) * | 2002-12-02 | 2005-10-05 | 삼성전자주식회사 | Resonant cavities utilizing photonic crystals |
US7418161B2 (en) * | 2004-06-22 | 2008-08-26 | Micron Technology, Inc. | Photonic crystal-based optical elements for integrated circuits and methods therefor |
US7228042B2 (en) * | 2005-03-04 | 2007-06-05 | International Business Machines Corporation | Method and apparatus for resonant coupling in photonic crystal circuits |
US7783139B2 (en) * | 2005-03-18 | 2010-08-24 | Kyoto University | Polarized light mode converter |
US7545242B2 (en) * | 2005-11-01 | 2009-06-09 | Hewlett-Packard Development Company, L.P. | Distributing clock signals using metamaterial-based waveguides |
US7421179B1 (en) * | 2006-09-29 | 2008-09-02 | Wei Jiang | Apparatus and method for switching, modulation and dynamic control of light transmission using photonic crystals |
US20080212921A1 (en) | 2007-03-02 | 2008-09-04 | Georgia Tech Research Corporation | Optical interconnect devices and structures based on metamaterials |
CA2656534A1 (en) * | 2008-02-19 | 2009-08-19 | The Royal Institution For The Advancement Of Learning/Mcgill University | High-speed bandpass serial data link |
US8600200B1 (en) * | 2010-04-01 | 2013-12-03 | Sandia Corporation | Nano-optomechanical transducer |
US9091807B2 (en) * | 2012-12-12 | 2015-07-28 | California Institute Of Technology | Compact tunable photonic crystal nanobeam cavity with low power consumption |
US9268092B1 (en) * | 2013-03-14 | 2016-02-23 | Sandia Corporation | Guided wave opto-acoustic device |
US10333044B2 (en) * | 2013-04-07 | 2019-06-25 | The Regents Of The University Of Colorado, A Body Corporate | Phononic metamaterials adapted for reduced thermal transport |
US10283689B2 (en) * | 2013-04-07 | 2019-05-07 | The Regents Of The University Of Colorado, A Body Corporate | Phononic metamaterials comprising atomically disordered resonators |
US20170047499A1 (en) * | 2013-04-07 | 2017-02-16 | The Regents Of The University Of Colorado A Body Corporate | Phononic Metamaterials |
CN104570409B (en) * | 2014-09-29 | 2017-07-18 | 欧阳征标 | A kind of port photon crystal rings row device of compact six |
US9696492B1 (en) * | 2016-03-03 | 2017-07-04 | National Technology & Engineering Solutions Of Sandia, Llc | On-chip photonic-phononic emitter-receiver apparatus |
KR20190033283A (en) * | 2017-09-21 | 2019-03-29 | 삼성전자주식회사 | Metasurface optical element and method of manufacturing the same |
-
2019
- 2019-08-23 US US16/549,466 patent/US11163114B2/en active Active
-
2021
- 2021-08-31 US US17/462,491 patent/US11822122B2/en active Active
-
2023
- 2023-10-11 US US18/378,788 patent/US20240045140A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US11822122B2 (en) | 2023-11-21 |
US20210055477A1 (en) | 2021-02-25 |
US20210396929A1 (en) | 2021-12-23 |
US11163114B2 (en) | 2021-11-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10816726B1 (en) | Edge couplers for photonics applications | |
TWI751803B (en) | Optical fiber coupler having hybrid tapered waveguide segments and metamaterial segments | |
US20240045140A1 (en) | Waveguide structures | |
JP2008509450A (en) | System and taper waveguide for improving optical coupling efficiency between optical fiber and integrated planar waveguide, and method for manufacturing the same | |
US10795082B1 (en) | Bragg gratings with airgap cladding | |
CN114252954B (en) | Heterogeneous optical power splitter/combiner | |
US20210294035A1 (en) | Optical couplers with non-linear tapering | |
US11061186B2 (en) | Waveguide structures | |
US11592617B2 (en) | Non-planar waveguide structures | |
US20190107672A1 (en) | Non-planar waveguide structures | |
CN113835220A (en) | Multi-layer optical phased array for side lobe mitigation | |
US9709748B2 (en) | Frontside coupled waveguide with backside optical connection using a curved spacer | |
US10746907B2 (en) | Grating couplers with cladding layer(s) | |
US11353651B2 (en) | Multi-mode optical waveguide structures with isolated absorbers | |
US11467341B2 (en) | Waveguide crossings including a segmented waveguide section | |
CN112180507B (en) | Multi-waveguide crossover device, waveguide chip and forming method thereof | |
CN219738151U (en) | On-chip mode division multiplexing/demultiplexing device | |
JP2004045924A (en) | Two-dimensional photonic crystal with geometrically arrayed lattice defects | |
US20230280549A1 (en) | Metamaterial layers for use with optical components | |
US10557989B1 (en) | Slot assisted grating based transverse magnetic (TM) transmission mode pass polarizer | |
CN105829932B (en) | Semiconductor optical waveguide, its manufacturing method and the optical communication device using it | |
US11092743B2 (en) | Waveguide absorbers | |
US11808998B2 (en) | Optical coupling apparatus and methods of making same | |
US20230266545A1 (en) | Dual-layer grating coupler | |
US20230369242A1 (en) | Stress-Reduced Silicon Photonics Semiconductor Wafer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |