US20230336157A1 - Mems device and fabrication method thereof - Google Patents

Mems device and fabrication method thereof Download PDF

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US20230336157A1
US20230336157A1 US18/211,049 US202318211049A US2023336157A1 US 20230336157 A1 US20230336157 A1 US 20230336157A1 US 202318211049 A US202318211049 A US 202318211049A US 2023336157 A1 US2023336157 A1 US 2023336157A1
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layer
filter
saw filter
cavity
baw
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Herb He Huang
Hailong LUO
Wei Li
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Ningbo Semiconductor International Corp
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Ningbo Semiconductor International Corp
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Assigned to NINGBO SEMICONDUCTOR INTERNATIONAL CORPORATION reassignment NINGBO SEMICONDUCTOR INTERNATIONAL CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HUANG, HERB HE
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/007—Interconnections between the MEMS and external electrical signals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H2003/0071—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of bulk acoustic wave and surface acoustic wave elements in the same process

Definitions

  • the present disclosure relates to the technical field of microelectromechanical systems (MEMS) device and, more particularly, to a MEMS device and a fabrication method thereof.
  • MEMS microelectromechanical systems
  • MEMS Microelectromechanical systems
  • IC integrated circuit
  • the integration includes three methods, namely, monolithic integration, semi-hybrid (bonding) integration, and hybrid integration.
  • the monolithic integration refers to fabricating a MEMS structure and a complementary metal-oxide semiconductor (CMOS) structure on a same chip.
  • CMOS complementary metal-oxide semiconductor
  • the hybrid integration refers to fabricating the MEMS structure and the CMOS structure on separate dies and packaging them together into one device in which the MEMS bare chip with bumps is flipped and is soldered or wire-bonded to connect to the IC chip to form a system-in-package (SIP).
  • SIP system-in-package
  • the semi-hybrid integration refers to using a three-dimensional integration technology to three-dimensionally integrate the MEMS structure and the CMOS structure.
  • the monolithic integration is an important development direction of the integration technology of the MEMS and IC, and provides many advantages for radio frequency (RF) thin film bulk acoustic wave (BAW) filters.
  • RF radio frequency
  • BAW thin film bulk acoustic wave
  • the existing RF BAW filter fabrication technology often integrates filters, drivers, and processing circuits together into one SIP. As requirements for the RF system performance are getting more stringent, multiple filters in different frequency bands need to be fabricated in one single wafer. Because of fabrication process and device characteristics of the BAW filter, it is difficult to fabricate multiple filters in different frequency bands in one single wafer. When the filters are fabricated, the fabrication process thereof is extremely complex. However, the BAW filter has many advantages, such as low insertion loss and high isolation. In certain applications, the BAW filter must be used.
  • the MEMS device includes a surface acoustic wave (SAW) filter including an interdigital transducer; a first structural layer disposed over the SAW filter; and a bulk acoustic wave (BAW) filter disposed over the first structural layer.
  • the BAW filter includes a supporting substrate, an acoustic reflective structure disposed on a surface of the supporting substrate, and a piezoelectric stack structure disposed over the acoustic reflective structure.
  • the piezoelectric stack structure includes a first electrode, a piezoelectric layer, and a second electrode.
  • the first structural layer includes a first cavity covered by an effective resonance region of the piezoelectric stack structure and the interdigital transducer of the SAW filter.
  • the fabrication method includes: providing a surface acoustic wave (SAW) filter including an interdigital transducer; providing a bulk acoustic wave (BAW) filter including a supporting substrate, a support layer disposed on a surface of the supporting substrate, and a piezoelectric stack structure configured to enclose a second cavity with the support substrate and the support layer; and bonding the BAW filter to the SAW filter through a first structural layer to form a first cavity with the SAW filter.
  • An effective resonance region of the piezoelectric stack structure and the interdigital transducer of the SAW filter together cover the first cavity.
  • FIG. 1 is a structural schematic diagram of an exemplary MEMS device according to some embodiments of the present disclosure
  • FIGS. 2 - 6 are structural schematic diagrams corresponding to different steps in an exemplary MEMS device fabrication method according to some embodiments of the present disclosure
  • FIGS. 7 - 10 are structural schematic diagrams corresponding to different steps in another exemplary MEMS device fabrication method according to some embodiments of the present disclosure.
  • FIGS. 11 - 12 are structural schematic diagrams corresponding to different steps in another exemplary MEMS device fabrication method according to some embodiments of the present disclosure.
  • the substrate material of a surface acoustic wave (SAW) filter may be lithium niobate or lithium tantalate.
  • the material properties and thermal expansion coefficient thereof are different from ordinary substrates (e.g., silicon substrates).
  • the substrate of the SAW filter is easy to break, and is not easy to be compatible with a commonly used silicon wafer process. Thus, it is not easy to integrate wafer-level processes of the SAW filter and the BAW filter together in the existing technology.
  • due to the fabrication process and device characteristics of the BAW filter it is difficult to form the BAW filter with multiple frequency bands on a single wafer even if it can be done at all. The complexity of the fabrication process is very high. But the BAW filter does have significant advantages, such as low insertion loss and high isolation.
  • the BAW filter is a must.
  • the fabrication process and device characteristics of the SAW filter make it easy to fabricate a filter with multiple frequency bands on one single wafer. It is more cost-effective to use the SAW filter.
  • how to bond the SAW filter and the BAW filter together to solve the problems of single frequency band limitation, low integration density, and cumbersome fabrication process of the current MEMS devices is an urgent problem to be solved.
  • FIG. 1 is a structural schematic diagram of an exemplary MEMS device according to some embodiments of the present disclosure.
  • the MEMS device includes: a SAW filter including an interdigital transducer 11 , a first structural layer 13 disposed over the SAW filter, and a BAW filter disposed over the first structural layer 13 .
  • the BAW filter includes a supporting substrate 100 , an acoustic reflective structure (not shown) disposed on the supporting substrate 100 , and a piezoelectric stack structure disposed on the acoustic reflective layer.
  • the piezoelectric stack structure includes a first electrode 102 , a piezoelectric layer 103 , and a second electrode 104 stacked sequentially.
  • the first structural layer 13 includes a first cavity 120 a .
  • An effective resonance region of the piezoelectric stack structure and the interdigital transducer 11 of the SAW filter cover the first cavity 120 a.
  • the BAW filter may also be a thin-film BAW resonator or a solid-state assembled resonator.
  • the BAW filter may be the thin-film BAW resonator.
  • the BAW filter may be the solid-state assembled resonator.
  • the thin-film BAW filter will be used when describing the present disclosure.
  • the first cavity 120 a may be formed by etching the first structural layer 13 using an etching process.
  • a bonding interface is disposed between the first structural layer 13 and the BAW filter.
  • the first structural layer 13 is bonded to the BAW filter through the bonding interface.
  • the BAW filter is bonded to the first structural layer 13 disposed on the SAW filter to form the first cavity 120 a with the SAW filter.
  • Vertical integration of the BAW filter and the SAW filter in a device fabrication stage eliminates a back-end system-in-package (SIP) process, simplifies the fabrication process, reduces the packaging volume of an entire system, and substantially improves integration level.
  • SIP system-in-package
  • the bonding process may include metal bonding, covalent bonding, adhesive bonding, or fusion bonding.
  • the first structural layer and the filter are bonded together through a bonding layer.
  • the material of the bonding layer includes a photolithographic organic curable film, silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, ethyl silicate, or metal.
  • the first structural layer 13 may also be disposed on the BAW filter.
  • a bonding interface is disposed between the first structural layer 13 and the SAW filter. The first structural layer 13 is bonded to the SAW filter through the bonding interface, thereby achieving a bonding connection between the BAW filter and the SAW filter.
  • a shape of a bottom surface of the first cavity 120 a is a rectangle.
  • the shape of the bottom surface of the first cavity 120 a may also be a circle, an ellipse, or a polygon other than a rectangle, such as a pentagon, a hexagon, etc.
  • the effective resonance region of the piezoelectric stack structure and the interdigital transducers 11 of the SAW filter together cover the first cavity 120 a , which achieves the vertical integration, reduces the packaging volume of the entire system, achieving the miniaturization, and substantially improves the integration level.
  • the structure of the MEMS device provided by the present disclosure not only retains the advantages of high frequency and low insertion loss of the BAW filter, but also reduces a fabrication process cost to satisfy the requirement of multiple frequency bands. Disposing the effective resonance region of the piezoelectric stack structure in the first cavity 120 a effectively improves a quality factor of the BAW filter.
  • the effective resonance region of the piezoelectric stack structure and the interdigital transducer 11 of the SAW filter together cover the first cavity 120 a .
  • the effective resonance region and the interdigital transducer 11 face toward the first cavity 120 a to cover the first cavity 120 a , respectively.
  • at least one of the effective resonance region or the interdigital transducer 11 protrudes into the first cavity 120 a.
  • the first cavity 120 a penetrates through the first structural layer 13 .
  • the first structural layer 13 may be a photolithographically curable organic film or an oxide layer.
  • the first structural layer 13 is the photolithographically curable organic film, which has one-sided or double-sided adhesives.
  • the first structural layer 13 may be made of a film-like material or a liquid material, and may be photoetched and cured.
  • the first structural layer 13 has a relatively small elastic modulus, capable of relieving a bonding stress between the SAW filter and the BAW filter. The bonding between the SAW filter and the BAW filter is highly reliable.
  • the first structural layer 13 may be photolithographically etched to obtain the first cavity 120 a , which causes less damage to the surface of acoustic wave filters, and further improves the quality factor of the device.
  • the first structural layer 13 have a thickness ranging from 5 ⁇ m to 50 ⁇ m.
  • the subsequent bonding of the SAW wave filter and the BAW filter needs to reach a certain thickness, and a first isolation groove subsequently formed on the first structural layer 13 also needs to have a certain depth.
  • the thickness of the first structural layer 13 may also be thicker or thinner than the above-described range.
  • a passivation layer 12 is arranged between the first structural layer 13 and the SAW filter, and by disposing the passivation layer 12 on the SAW filter, the SAW filter can be protected, and a structural strength and device performance of the SAW filter can be improved.
  • the passivation layer 12 includes an oxide layer 121 and an etch stop layer 122 .
  • the oxide layer 121 is located on an upper surface of the SAW filter, and the etch stop layer 122 is located on the oxide layer 121 .
  • the material of the oxide layer 121 may include at least one of insulating materials such as silicon oxide, silicon oxynitride, silicon nitride, etc.
  • the etch stop layer 122 is provided on the oxide layer 121 .
  • the material of the etch stop layer 122 includes but not limited to silicon nitride and silicon oxynitride.
  • the etch stop layer 122 is made of silicon nitride. Silicon nitride has a high density and a high strength, which improves the waterproof and anti-corrosion effect of the SAW filter.
  • the etch stop layer 122 may be used to increase structural stability of the fabricated filter.
  • the etch stop layer 122 has a lower etching rate compared with the photolithographically curable organic film. Over-etching may be prevented during a process of etching the photolithographically curable organic film to form the first cavity 120 a .
  • the surface of the underlying structure may be protected from damage, thereby improving device performance and reliability.
  • the passivation layer 12 may only include one of the oxide layer 121 and the etch stop layer 122 .
  • the passivation layer 12 may also have other structures, which are not limited here.
  • the SAW filter further includes a support substrate 10 and a dielectric layer 20 disposed on the support substrate 10 .
  • the SAW filter is formed by evaporating a layer of metal film on a material substrate with piezoelectric effect, and then performing a photolithography process to form a pair of interdigitated electrodes at both ends.
  • the SAW filter has advantages of high operating efficiency, wide pass band frequency, excellent frequency selection characteristics, small size, and light weight, and may be fabricated using a same production process as integrated circuits.
  • the SAW filter is simple to fabricate and low in cost.
  • the support substrate 10 has a first surface and a second surface arranged opposite to each other.
  • the dielectric layer 20 is disposed on the first surface of the support substrate 10 .
  • the interdigital transducer 11 is located in the dielectric layer 20 on the first surface of the support substrate 10 .
  • the interdigital transducer 11 includes a transmitting transducer and a receiving transducer. When a signal voltage is applied to the transmitting transducer, an electric field is formed between input interdigital electrodes to cause the piezoelectric material to mechanically vibrate and propagate in a form of ultrasonic waves to both sides.
  • the receiving transducer converts the mechanical vibration into an electrical signal, which is outputted by output interdigitated electrodes.
  • the BAW filter is located over the first structural layer 13 .
  • the BAW filter includes a supporting substrate 100 , a support layer 101 disposed on a surface of the supporting substrate 100 , and a piezoelectric stack structure configure to enclose a second cavity 110 a together with the supporting substrate 100 and the support layer 101 .
  • orthogonal projections of the first cavity 120 a and the second cavity 110 a on the piezoelectric stacked structure at least partially overlap, such that both the upper and lower sides of the effective resonance region of the piezoelectric stacked structure are exposed in the air, which further improves the quality factor of the BAW filter.
  • the supporting substrate 100 may be made of at least one of silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbon (SiC), silicon germanium carbon (SiGeC), indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP), or other III/V compound semiconductors.
  • the supporting substrate 100 may also include multilayer structures composed of the over-described semiconductors, etc.
  • the supporting substrate 100 may also be an alumina ceramic substrate, or a quartz or glass substrate.
  • the support layer 101 is bonded to the supporting substrate 100 and forms the second cavity 110 a with the piezoelectric stack structure, and the second cavity 110 a exposes the supporting substrate 100 .
  • the second cavity 110 a is an annular closed cavity, and the second cavity 110 a may be formed by etching the support layer 101 through an etching process.
  • the present disclosure is not limited thereto.
  • the support layer 101 is combined with the supporting substrate 100 by a bonding process, and the bonding process includes: metal bonding, covalent bonding, adhesive bonding, or fusion bonding.
  • the support layer 101 and the supporting substrate 100 are bonded through a bonding layer, and the material of the bonding layer includes silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, or ethyl silicate.
  • a shape of a bottom surface of the second cavity 110 a is rectangular. In some other embodiments, the shape of the bottom surface of the second cavity 110 a on the first electrode 102 may also be circular, oval, or polygons other than rectangles, such as pentagons, hexagons, etc.
  • the material of the support layer 101 may be any suitable dielectric material, including but not limited to one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, and other materials. The materials of the support layer 101 and the bonding layer may be the same.
  • the piezoelectric stack structure is disposed over the second cavity 110 a .
  • the piezoelectric stack structure includes the first electrode 102 , the piezoelectric layer 103 , and the second electrode 104 arranged sequentially.
  • the first electrode 102 is disposed on the support layer 101
  • the piezoelectric layer 103 is disposed on the first electrode 102
  • the second electrode 104 is disposed on the piezoelectric layer 103 .
  • the piezoelectric layer 103 covers the second cavity 110 a . It should be understood that covering the second cavity 110 a refers to that the piezoelectric layer 103 is an entire film without being etched. However, it does not mean that the piezoelectric layer 103 completely covers the second cavity 110 a to form a sealed cavity. Of course, the piezoelectric layer 103 may completely cover the second cavity 110 a to form the sealed cavity. The fact that the piezoelectric layer 103 is not etched ensures a certain thickness of the piezoelectric stack structure, such that the BA W filter has a certain structural strength, and the yield of fabricating the BAW filter is improved.
  • the etch stop layer is further disposed between the support layer 101 and the first electrode 102 .
  • the material of the etch stop layer includes but not limited to silicon nitride (Si3N4) and silicon oxynitride (SiON).
  • the etch stop layer may be used to increase the structural stability of the finished BAW resonator.
  • the etch stop layer has a lower etching rate compared with the support layer 101 , prevents over-etching during a process of forming the second cavity 110 a , protects the surface of the first electrode 102 disposed thereunder from being damaged, and improves the device performance and reliability.
  • the piezoelectric stack structure further includes a first groove 105 and a second groove 106 on its surface.
  • the first groove 105 is disposed on a lower surface of the piezoelectric stack structure on a bottom side where the second cavity 110 a is located, and penetrates through the first electrode 102 .
  • the second groove 106 is disposed on an upper surface of the piezoelectric stacked structure and penetrates through the second electrode 104 .
  • Two ends of the first groove 105 are arranged opposite to two ends of the second groove 106 , such that two junctions of orthogonal projections of the first groove 105 and the second groove 106 on the supporting substrate 100 meet with each other or may be separated by a gap.
  • the orthogonal projections of the first groove 105 and the second groove 106 on the supporting substrate 100 are closed figures.
  • the first electrode 102 , the piezoelectric layer 103 , and the second electrode 104 disposed over the first cavity 120 a have an overlapping region in a direction perpendicular to the supporting substrate 100 , which is located between the first groove 105 and the second groove 106 .
  • the overlapping region is the effective resonance region.
  • the effective resonance region of the BAW filter is defined by the first groove 105 and the second groove 106 , and the first groove 105 and the second groove 106 penetrate through the first electrode 102 and the second electrode 104 , respectively.
  • the piezoelectric layer 103 remains intact without being etched, which ensures the structural strength of the BAW filter and improves the yield of fabricating the BAW filter.
  • the SAW filter is electrically connected to an external circuit through a first electrical connection structure 14 and a fourth electrical connection structure 17
  • the BAW filter is electrically connected to another external circuit through a second electrical connection structure 15 and a third electrical connection structure 16 .
  • the first electrical connection structure 14 includes a first interconnection hole (not shown) and a first conductive interconnection layer 141 disposed in the first interconnection hole.
  • the first interconnection hole penetrates through from one side of the supporting substrate 100 and extends to the interdigital transducer 11 of the SAW filter.
  • the second electrical connection structure 15 includes a second interconnection hole (not shown) and a second conductive interconnection layer 151 disposed in the second interconnection hole.
  • the second interconnection hole penetrates through from one side of the supporting substrate 100 and extends to the first electrode 102 outside the effective resonance region of the piezoelectric stack structure.
  • the supporting substrate 100 is provided with an interconnection line 18 .
  • the first conductive interconnection layer 141 includes a first plug
  • the second conductive interconnection layer 151 includes a second plug. The first plug and the second plug are electrically connected to the interconnection line 18 .
  • the interdigital transducer 11 includes interdigital electrodes disposed at an input end and an output end respectively.
  • the first electrical connection structure is used to introduce an electrical signal to the input end of the interdigital transducer 11 .
  • the electrical connection structure is used to connect the output end of the interdigital transducer 11 .
  • the surface acoustic wave formed at the input end propagates along the surface of the substrate to the interdigital electrode at the output end.
  • the second electrical connection structure is used to introduce another electrical signal into the second electrode of the effective resonance region
  • the third electrical connection structure is used to introduce another electrical signal into the first electrode of the effective resonance region.
  • the specific structures of the first electrical connection structure 14 and the second electrical connection structure 15 are as follows.
  • the first electrical connection structure 14 includes the first interconnect hole.
  • the first interconnect hole penetrates from one side of the supporting substrate 100 and extends to the interdigital transducer 11 of the SAW filter.
  • the first conductive interconnection layer 141 covers an inner surface of the first interconnection hole and is electrically connected to the interconnection line 18 on the surface of the supporting substrate 100 .
  • the second electrical connection structure 15 includes the second interconnection hole.
  • the second interconnection hole penetrates from one side of the supporting substrate 100 , extends to the first electrode 102 outside the effective resonance region of the piezoelectric stack structure, and exposes the first electrode 102 .
  • the second conductive interconnection layer 151 covers an inner surface of the second interconnection hole and is electrically connected to the interconnection line 18 on the surface of the supporting substrate 100 .
  • the second electrical connection structure 15 is not directly electrically connected to the second electrode 104 , but is connected to the first electrode 102 outside the effective resonance region, and is electrically connected to the second electrode 104 of the effective resonance region through a conductive interconnection structure (not shown).
  • the third electrical connection structure 16 is electrically connected to the first electrode 102 inside the effective resonance region, and supplies power to the first electrode 102 inside the effective resonance region.
  • the first electrical connection structure 14 and the fourth electrical connection structure 17 are consistent in structure, but are located at different positions.
  • the second electrical connection structure 15 and the third electrical connection structure 16 are also consistent in structure, but are located at different positions. The descriptions about the third electrical connection structure 16 and the fourth electrical connection structure 17 are thus omitted herein.
  • the MEMS device also includes an insulating layer covering the interconnection line 18 and the surface of the supporting substrate 100 .
  • a conductive bump 19 is disposed on the surface of the supporting substrate 100 and is electrically connected to the interconnection line 18 .
  • the present disclosure also provides a method of fabricating a MEMS device.
  • the method includes the following processes.
  • the SAW filter includes an interdigital transducer.
  • the BAW filter includes a supporting substrate, a support layer disposed on a surface of the supporting substrate, and a piezoelectric stack structure configured to enclose a second cavity with the supporting substrate and the support layer.
  • the BAW filter is bonded to the SAW filter through a first structural layer, and forms a first cavity with the BAW filter.
  • an effective resonance region of the piezoelectric stack structure and the interdigital transducer of the SAW filter together cover the first cavity.
  • sequence numbers of the processes do not represent a sequence of performing the processes.
  • FIGS. 2 - 12 are structural schematic diagrams corresponding to different steps in an exemplary MEMS device fabrication method according to some embodiments of the present disclosure. The method of fabricating the MEMS device is described in detail in the following with reference to FIGS. 2 - 12 .
  • the SAW filter is provided.
  • the process of forming the SAW filter includes: providing a support substrate 10 ; forming the interdigital transducer 11 on the support substrate 10 ; and forming a dielectric layer 20 on a first surface of the support substrate 10 .
  • the dielectric layer 20 covers the first surface of the support substrate 10 and the interdigital transducer 11 .
  • the support substrate 10 includes the first surface and a second surface.
  • the interdigital transducer 11 is formed on the first surface of the support substrate 10 .
  • a passivation layer 12 is formed on the SAW filter.
  • the process of forming the passivation layer 12 includes: forming an oxide layer 121 on the dielectric layer 20 as shown in FIG. 3 ; and forming an etch stop layer 122 on the oxide layer 121 as shown in FIG. 4 .
  • the etch stop layer 122 and the oxide layer 121 together form the passivation layer 12 .
  • the material and function of the oxide layer 121 reference can be made to Embodiment 1, and the description thereof is omitted herein.
  • the material and function of the etch stop layer 122 reference can be made to Embodiment 1, and the description thereof is omitted herein.
  • a first structural layer 13 is formed on the passivation layer 12 .
  • the first structural layer 13 may be a photolithographically curable organic film.
  • the function of the photolithographically curable organic film is the same as that in Embodiment 1 over.
  • the first structural layer 13 is not formed on the passivation layer 12 , but may be formed on the piezoelectric stack structure of the BAW filter.
  • FIGS. 7 - 10 the description thereof is omitted herein.
  • the first structural layer 13 is etched to form a first isolation groove 120 a ′, such that the interdigital transducer 11 is arranged opposite to the first isolation groove 120 a′.
  • the BAW filter includes: a supporting substrate, a support layer formed on a surface of the supporting substrate, and a piezoelectric stack structure configured to enclose a second cavity with the supporting substrate and the support layer.
  • a supporting substrate a supporting substrate
  • a support layer formed on a surface of the supporting substrate
  • a piezoelectric stack structure configured to enclose a second cavity with the supporting substrate and the support layer.
  • a temporary substrate 200 is provided.
  • the temporary substrate 200 may be any suitable substrate well known to those skilled in the art, and may include at least one of silicon (Si), germanium (Ge), silicon germanium (SiGe), arsenide Indium (Ins), indium phosphide (InP), or other III/V compound semiconductors.
  • the temporary substrate 200 may also include multilayer structures including the over-described semiconductors.
  • the temporary substrate 200 may be silicon-on-insulator (SOI), stacked silicon-on-insulator (SSOI), stacked silicon-germanium-on-insulator (S-SiGeOI), silicon germanium-on-insulator (SiGeOI), germanium-on-insulator (GeOI), or double-sided polished silicon (DSP) wafer.
  • the temporary substrate 200 may also be an aluminum oxide ceramic substrate or a quartz or glass substrate.
  • the temporary substrate 200 is a P-type high-resistance single crystal silicon wafer with a ⁇ 100> crystal orientation.
  • a second electrode layer 104 ′, a piezoelectric layer 103 , and a first electrode 102 are sequentially formed on the temporary substrate 200 .
  • the material of the second electrode layer 104 ′ and the first electrode 102 may include any suitable conductive material or semiconductor material well known to those skilled in the art.
  • the conductive material may be a metallic material with conductive properties.
  • the conductive material may be molybdenum (Mo), aluminum (Al), copper (Cu), tungsten (W), tantalum (Ta), platinum (Pt), ruthenium (Ru), rhodium (Rh), iridium (Ir), chromium (Cr), titanium (Ti), gold (Au), osmium (Os), rhenium (Re), palladium (Pd), and other metals or a stack of the over metals.
  • the semiconductor material may include Si, Ge, SiGe, SiC, and SiGeC, etc.
  • the second electrode layer 104 ′ and the first electrode 102 may be formed by physical vapor deposition or chemical vapor deposition methods such as magnetron sputtering and evaporation.
  • the material of the piezoelectric layer 103 may be a piezoelectric material with a wurtzite crystal structure, such as aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO3), quartz (Quartz), potassium niobate (KNbO3), lithium tantalum acid (LiTaO3), and a combination thereof.
  • the piezoelectric layer 103 may further include a rare earth metal such as at least one of scandium (Sc), erbium (Er), yttrium (Y), or lanthanum (La).
  • the piezoelectric layer 103 may further include a transition metal such as at least one of zirconium (Zr), titanium (Ti), manganese (Mn), or hafnium (Hf).
  • the piezoelectric layer 103 may be deposited and formed by any suitable method known to those skilled in the art, such as chemical vapor deposition, physical vapor deposition, or atomic layer deposition.
  • the second electrode layer 104 ′ and the first electrode 102 are made of metal molybdenum (Mo), and the piezoelectric layer 103 is made of aluminum nitride (AlN).
  • the first electrode 102 is etched to form the first groove 105 penetrating through the first electrode 102 .
  • the first groove 105 is located in the subsequently formed first cavity 120 a , and a sidewall of the first groove 105 may be inclined or vertical.
  • the sidewall of the first groove 105 forms a right angle with a plane where the piezoelectric layer 103 is located (a longitudinal rectangular-shaped cross-section of the first groove 105 along a film thickness direction).
  • the sidewall of the first groove 105 forms an obtuse angle with the plane where the piezoelectric layer 103 is located.
  • the orthogonal projection of the first groove 105 on the plane where the piezoelectric layer 103 is located is a half-ring or a polygon similar to a half-ring.
  • the supporting substrate 100 includes the second cavity 110 a formed on the piezoelectric layer.
  • the supporting substrate 100 covers part of the first electrode, and the effective resonance region of the first electrode is located within the boundary of an area enclosed by the second cavity 110 a.
  • the support layer 101 is also formed on the piezoelectric layer 103 .
  • the support layer 101 is bonded to the supporting substrate 100 and forms the second cavity 110 a with the piezoelectric layer 103 .
  • the second cavity 110 a exposes the supporting substrate 100 .
  • the second cavity 110 a is an annular closed cavity.
  • the second cavity 110 a may be formed by etching the support layer 101 through an etching process.
  • the present disclosure is not limited thereto.
  • the support layer 101 is combined with the supporting substrate 100 by a bonding process.
  • the bonding process includes metal bonding, covalent bonding, adhesive bonding, or fusion bonding.
  • the support layer 101 and the supporting substrate 100 are bonded together through a bonding layer, and the material of the bonding layer may include silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, or ethyl silicate.
  • a shape of a bottom surface of the second cavity 110 a is a rectangle. In some other embodiments, the shape of the bottom surface of the second cavity 110 a on the first electrode 102 may also be circular, oval or polygons other than rectangles, such as pentagons, hexagons, etc.
  • the material of the support layer 101 may be any suitable dielectric material, including but not limited to one of silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, and other suitable materials. The material of the support layer 101 and the bonding layer may be the same.
  • the temporary substrate 200 is removed.
  • a patterning process is performed on the second electrode layer 104 ′ to form the second electrode 104 .
  • the first electrode, the piezoelectric layer, and the second electrode together form the piezoelectric stack structure.
  • the second groove 106 is formed on the second electrode 104 penetrating through the second electrode 104 .
  • the second groove 106 is formed on a side opposite to the first groove 105 .
  • two junctions of orthogonal projections of the first groove 105 and the second groove 106 on the supporting substrate 100 meet with each other to form a closed irregular polygon.
  • first groove 105 and the second groove 106 may be formed separately.
  • first groove 105 and the second groove 106 reference can be made to Embodiment 1, and the description thereof is omitted herein.
  • the effective resonant region includes a region where the first electrode 102 , the piezoelectric layer 103 , and the second electrode 104 overlap each other in a direction perpendicular to the surface of the piezoelectric stack structure.
  • a first structural layer 13 is formed on the second electrode 104 , and the first structural layer 13 is etched to form a first isolation groove 120 a ′.
  • the first isolation groove 120 a ′ at least exposes the effective resonant region of the second electrode 104 .
  • the fabrication method further includes forming an etch stop layer (not shown) on the second electrode 104 , and forming the first structural layer 13 on the etch stop layer.
  • the first structural layer 13 is an oxide layer.
  • the first structural layer 13 may also be formed on the SAW filter.
  • the SAW filter For detail description, reference can be made to FIGS. 2 - 6 and the descriptions thereof.
  • the BAW filter is bonded to the SAW filter, such that the first isolation groove 120 a ′ is sandwiched between the SAW filter and the BAW filter to form the first cavity 120 a.
  • the BAW filter is bonded to the SAW filter.
  • the first structural layer 13 is bonded to the passivation layer 12 of SAW filter, that the first isolation groove 120 a ′ is sandwiched between the SAW filter and the BAW filter to form the first cavity 120 a.
  • the effective resonance region of the piezoelectric stack structure and the interdigital transducer 11 of the SAW filter cover the first cavity 120 a.
  • the BAW filter is bonded to the SAW filter and forms the first cavity 120 a with the SAW filter.
  • the effective resonance region of the piezoelectric stack structure and the interdigital transducer 11 of the SAW filter cover the first cavity 120 a , such that functional regions of the SAW filter and the BAW filter share a cavity, which facilitates vertical integration, reduces the overall system cost, shrinks the package volume, achieving miniaturization, and substantially improves integration level.
  • the embodiments of the present disclosure not only retain the advantages of high-frequency and low insertion loss of the BAW filter and simplify the fabrication process, but also reduce the production cost.
  • the effective resonance region of the piezoelectric stack structure is located in the first cavity 120 a . The upper and lower surfaces of the effective resonance region are completely exposed in the air, which effectively improves the quality factor of the BAW filter.
  • At least one of the SAW filter and the BAW filter is a wafer, and the subsequent processes such as bonding process and electrical connection are completed on the wafer, which facilitates simultaneous production of different frequency-band filters on one wafer.
  • the complexity of the fabrication process can be reduced, and the production can be substantially increased.
  • he fabrication method further includes forming a first electrical connection structure 14 and a fourth electrical connection structure 17 to electrically connect the SAW filter to an external circuit, and forming a second electrical connection structure 15 and a third electrical connection structure 16 to electrically connect the BAW filter to another external circuit.
  • the process for forming the first electrical connection structure 14 includes: forming a first interconnection hole (not shown) through an etching process, the first interconnection hole penetrating from one side of the supporting substrate 100 and extending to the interdigital transducer of the SAW filter, and forming a first conductive interconnection layer 141 in the first interconnection hole, the first conductive interconnection layer 141 covering an inner surface of the first interconnection hole.
  • the process for forming the second electrical connection structure 15 includes forming a second interconnection hole (not shown) through the etching process, the second interconnection hole penetrating from one side of the supporting substrate 100 and extending to the outside of the effective resonance region of the piezoelectric stack structure on the first electrode 102 , and forming a second conductive interconnection layer 151 in the second interconnection hole, the second conductive interconnection layer 151 covering an inner surface of the second interconnection hole.
  • an interconnection line 18 is formed on a surface of the supporting substrate 100 .
  • An insulating layer is formed on the interconnection line 18 , and the insulating layer covers the interconnection line 18 and the surface of the supporting substrate 100 .
  • a conductive bump 19 is arranged on the surface of the supporting substrate 100 and is electrically connected to the interconnection line 18 .
  • the conductive bump 19 is electrically connected to the external circuits.
  • the first conductive interconnection layer 141 and the second conductive interconnection layer 151 are electrically connected to the interconnection line 18 .
  • the first conductive interconnection layer 141 includes a first plug
  • the second conductive interconnection layer 151 includes a second plug
  • one end of the first plug is connected to an input end of the interdigital transducer 11 for providing signal voltage to a transmitting transducer, and the other end is connected to the interconnection line 18 .
  • the interconnection line 18 is used to connect to an external circuit.
  • One end of the second plug is connected to the first electrode 102 outside the effective resonance region, and is used to introduce an electrical signal into the second electrode 104 of the effective resonance region.
  • the third electrical connection structure 16 is used to introduce another electrical signal into the effective resonance region.
  • the fourth electrical connection structure 17 is used to connect an output end of the interdigital transducer 11 .
  • the surface acoustic wave forming a sound at the input end propagates along the surface of the substrate to an interdigital electrode at the output end. Due to the pressure effect, an electric field changes due to mechanical vibrations, and an electrical signal is outputted at the output end.
  • the third electrical connection structure 16 is formed in the same way as the second electrical connection structure 15
  • the fourth electrical connection structure 17 is formed in the same way as the first electrical connection structure 14 , and the descriptions thereof will not be repeated here.
  • the bonding process of bonding the SAW filter and the BAW filter also includes placing multiple SAW filters on the SAW filter wafer, and/or placing multiple BAW filters on the BAW filter wafer.
  • the embodiments of the present disclosure also include separating and forming individual bonding pairs of the SAW filter and the BAW filter.
  • the beneficial effects of the method embodiments of the present disclosure includes the following.
  • the first structural layer with the first cavity is formed between the SAW filter and the BAW filter.
  • the effective resonance region of the piezoelectric stack structure of the BAW filter and the interdigital transducer of the SAW filter together cover the first cavity, which facilitates the vertical integration, reduces the package volume of the entire system, achieving the miniaturization, and substantially improves the integration level.
  • the embodiments of the present disclosure not only retain the advantages of high-frequency and low insertion loss of the BAW filter and simplify the fabrication process, but also reduce the production cost.
  • the effective resonance region of the piezoelectric stack structure is located in the first cavity 120 a .
  • the upper and lower surfaces of the effective resonance region are completely exposed in the air, which effectively improves the quality factor of the BAW filter.
  • the electrical connection structures with the BAW filter and the SAW filter to electrically connect to different external circuits respectively, mutual interferences of signals of the SAW filter and the BAW filter can be avoided, and the performance of the MEMS device can be improved.
  • the effective resonance region of the BAW filter is defined by the first groove and the second groove.
  • the first groove and the second groove respectively penetrate the first electrode and the second electrode, and the piezoelectric layer remains intact without being etched, which ensures the structural strength of the BAW filter and improves the yield of the BAW filter.
  • the beneficial effects of the fabrication methods of the present disclosure further include the following.
  • the BAW filter is bonded to the SAW filter and forms the first cavity with the SAW filter.
  • the effective resonance region of the piezoelectric stack structure and the interdigital transducer of the SAW filter together cover the first cavity, such that functional regions of the SAW filter and the BAW filter share a cavity, which facilitates the vertical integration, reduces the overall system cost, shrinks the package volume, achieving the miniaturization, and substantially improves the integration level.
  • the embodiments of the present disclosure not only retain the advantages of high-frequency and low insertion loss of the BAW filter and simplify the fabrication process, but also reduce the production cost.
  • the effective resonance region of the piezoelectric stack structure is located in the first cavity. The upper and lower surfaces of the effective resonance region are completely exposed in the air, which effectively improves the quality factor of the BAW filter
  • At least one of the SAW filter and the BAW filter is a wafer, and the subsequent processes such as bonding process and electrical connection are completed on the wafer, which facilitates simultaneous production of different frequency-band filters on one wafer.
  • the complexity of the fabrication process can be reduced, and the production can be substantially increased.
  • the first structural layer is the photolithographically curable organic film, which relieves the bonding stress of the SAW filter and the BAW filter and provides high bonding reliability of the SAW filter and the BAW filter.
  • the first cavity is obtained by etching, thereby minimizing damages to the surface of the filters.
  • the passivation layer is provided on the SAW filter, which provides the dustproof, waterproof and anticorrosion functions for the SAW filter.

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  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Computer Hardware Design (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
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