US20230326852A1 - Semiconductor device having l-shaped conductive pattern - Google Patents
Semiconductor device having l-shaped conductive pattern Download PDFInfo
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- US20230326852A1 US20230326852A1 US17/714,797 US202217714797A US2023326852A1 US 20230326852 A1 US20230326852 A1 US 20230326852A1 US 202217714797 A US202217714797 A US 202217714797A US 2023326852 A1 US2023326852 A1 US 2023326852A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000004020 conductor Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 18
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5283—Cross-sectional geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
Definitions
- FIG. 1 is a block diagram showing a circuit configuration of a semiconductor device according to one embodiment of the present disclosure
- FIG. 2 is a schematic sectional view for explaining a configuration of the semiconductor device according to one embodiment of the present disclosure
- FIG. 3 is a schematic perspective view showing a part of an iRDL
- FIG. 4 is a schematic plan view of a wiring pattern extending in the X direction
- FIG. 5 is a schematic plan view of a wiring pattern extending in the Y direction
- FIGS. 6 to 12 are schematic plan views of a crank-shaped wiring pattern
- FIG. 13 is a schematic plan view of a wiring pattern including a pad area.
- FIG. 1 is a block diagram showing a circuit configuration of a semiconductor device according to one embodiment of the present disclosure.
- the semiconductor device shown in FIG. 1 includes a plurality of circuit blocks 10 , and power supply lines L 1 and L 2 supplying power to the circuit blocks 10 .
- the power supply line L 1 is connected to a power supply terminal 11 supplied with a power potential VDD, and supplies the power potential VDD to the circuit blocks 10 .
- the power supply line L 2 is connected to a power supply terminal 12 supplied with a ground potential VSS, and supplies the ground potential VSS to the circuit blocks 10 .
- FIG. 2 is a schematic sectional view for explaining a configuration of the semiconductor device according to one embodiment of the present disclosure.
- the semiconductor device according to the present embodiment includes a semiconductor substrate 20 , and a plurality of wiring layers M 0 to M 5 stacked on a main surface 20 A of the semiconductor substrate 20 with an interlayer dielectric film 21 interposed therebetween.
- the main surface 20 A of the semiconductor substrate 20 constitutes an XY plane.
- the wiring layers M 0 to M 5 are stacked in a Z direction on the main surface 20 A of the semiconductor substrate 20 and all extend in parallel to the main surface 20 A of the semiconductor substrate 20 .
- a transistor 30 is formed on the semiconductor substrate 20 .
- the transistor 30 includes a source region 31 , a drain region 32 , and a gate electrode 33 .
- the wiring layer M 0 is positioned in a lowermost layer and a part thereof is connected to the source region 31 of the transistor 30 through a via conductor 25 .
- the wiring layer M 5 is positioned in an uppermost layer and a part thereof is connected to an iRDL (inline redistribution layer) 23 through a via conductor 26 .
- the iRDL 23 is a rewiring layer positioned in a higher layer than the wiring layer M 5 and the wiring width and wiring thickness are significantly greater than those of the wiring layer M 5 as shown in FIG. 3 which is a schematic diagram.
- the wiring layer M 5 has a pad area 27 connected to the via conductor 26 .
- the iRDL 23 is covered by a protective film 22 . A part of the iRDL 23 is exposed from the protective film 22 and this part is used as an external terminal 24 .
- the wiring widths and wiring thicknesses of the wiring layers M 0 to M 5 are greater in upper layers. Slits are formed on the wiring layer M 5 having the greatest wiring width and wiring thickness for the purpose of reducing stress.
- a wiring pattern 40 located on the wiring layer M 5 extends in the X direction as shown in FIG. 4
- a plurality of slits 41 extending in the X direction are provided on the wiring pattern 40 .
- a wiring pattern 50 located on the wiring layer M 5 extends in the Y direction as shown in FIG. 5
- a plurality of slits 51 extending in the Y direction are formed on the wiring pattern 50 .
- the X direction and the Y direction form an angle of 90 degrees.
- the wiring pattern 60 shown in FIG. 6 includes sections 61 and 65 extending in the X direction, a section 63 extending in the Y direction, a section 62 connecting the section 61 and the section 63 , and a section 64 connecting the section 63 and the section 65 .
- a width W 61 of the section 61 in the Y direction, a width W 63 of the section 63 in the X direction, and a width W 65 of the section 65 in the Y direction are equal to each other. Therefore, the sections 62 and 64 are square. Although there are no physical boundaries between the sections 61 to 65 , these sections are virtually defined by virtual boundaries B 1 to B 4 .
- the virtual boundary B 1 is a virtual boundary between the section 61 and the section 62 and is on an extended line of one edge Y 1 of the section 63 .
- the virtual boundary B 2 is a virtual boundary between the section 62 and the section 63 and is on an extended line of one edge X 1 of the section 61 .
- the virtual boundary B 3 is a virtual boundary between the section 63 and the section 64 and is on an extended line of one edge X 2 of the section 65 .
- the virtual boundary B 4 is a virtual boundary between the section 64 and the section 65 and is on an extended line of the other edge Y 2 of the section 63 .
- a plurality of slits 71 and 75 extending in the X direction are provided in the sections 61 and 65 , respectively.
- a plurality of slits 73 extending in the Y direction are provided in the section 63 .
- a plurality of slits 721 and 722 extending in an A direction are provided in the section 62 .
- a plurality of slits 741 and 742 extending in the A direction are provided in the section 64 .
- the section 62 has an inner corner C 1 at which the edge X 1 and the edge Y 1 terminate, and an outer corner C 2 positioned diagonally to the inner corner C 1 .
- the section 64 has an inner corner C 3 at which the edge X 2 and the edge Y 2 terminate, and an outer corner C 4 positioned diagonally to the inner corner C 3 .
- the slits 721 and 722 provided in the section 62 are positioned at the side of the inner corner C 1 and the side of the outer corner C 2 , respectively.
- the slits 741 and 742 provided in the section 64 are positioned at the side of the inner corner C 3 and the side of the outer corner C 4 , respectively.
- the distance in the X direction between one end 721 a of the slit 721 in the A direction and the virtual boundary B 1 is shorter than the distance in the X direction between the other end 721 b of the slit 721 in the A direction and the virtual boundary B 1 while the distance in the Y direction between one end 721 a of the slit 721 in the A direction and the virtual boundary B 2 is longer than the distance in the Y direction between the other end 721 b of the slit 721 in the A direction and the virtual boundary B 2 .
- the distance in the Y direction between one end 741 a of the slit 741 in the A direction and the virtual boundary B 3 is shorter than the distance in the Y direction between the other end 741 b of the slit 741 in the A direction and the virtual boundary B 3 while the distance in the X direction between one end 741 a of the slit 741 in the A direction and the virtual boundary B 4 is longer than the distance in the X direction between the other end 741 b of the slit 741 in the A direction and the virtual boundary B 4 .
- the extended line V 1 crosses both the virtual boundaries B 1 and B 2 .
- the extended line V 2 crosses both an edge E 1 of the section 62 extending in the X direction and an edge E 2 of the section 62 extending in the Y direction.
- the extended line V 3 crosses both the virtual boundaries B 3 and B 4 .
- the extended line V 4 crosses both an edge E 3 of the section 64 extending in the Y direction and an edge E 4 of the section 64 extending in the X direction.
- the slits 721 , 722 , 741 , and 742 extend in a diagonal direction along the current direction in the sections 62 and 64 where the current direction changes by 90 degrees, the flow of current is not greatly disturbed by the slits even when the wiring pattern 60 is crank-shaped.
- the lengths of the slits 721 , 722 , 741 , and 742 in the A direction are equal to each other in the example shown in FIG. 6
- the lengths of the slits 721 and 741 positioned at the sides of the inner corners C 1 and C 3 may be shorter than those of the slits 722 and 742 positioned at the sides of the outer corners C 2 and C 4 as in a wiring pattern 60 A shown in FIG. 7 .
- the resistances of the sections 62 and 64 at the sides of the inner corners C 1 and C 3 where the current density is higher can be reduced.
- each of the slits 721 , 722 , 741 , and 742 may be divided into two as in a wiring pattern 60 B shown in FIG. 8 .
- the extending directions of divided parts of each slit may be the same as each other or may be different from each other as shown in FIG. 8 .
- the extending directions of slits 721 A and 722 A positioned at the side of the section 61 are oriented slightly toward the X direction with respect to the A direction
- the extending directions of slits 721 B and 722 B positioned at the side of the section 63 are oriented slightly toward the Y direction with respect to the A direction.
- the extending directions of the slits 741 A and 742 A positioned at the side of the section 63 are oriented slightly toward the Y direction with respect to the A direction
- the extending directions of the slits 741 B and 742 B positioned at the side of the section 65 are oriented slightly toward the X direction with respect to the A direction.
- the slits 721 , 722 , 741 , and 742 may be arc-shaped along a direction in which the current flows as in a wiring pattern 60 C shown in FIG. 9 .
- the curvature radii of the slits 722 and 742 positioned at the sides of the outer corners C 2 and C 4 may be greater than those of the slits 721 and 741 positioned at the sides of the corners C 1 and C 3 , respectively.
- the slits 721 , 722 , 741 , and 742 may be L-shaped along the direction in which the current flows as in a wiring pattern 60 D shown in FIG. 10 .
- the sizes of the slits 721 and 741 positioned at the sides of the inner corners C 1 and C 3 may be smaller than those of the slits 722 and 742 positioned at the side of the outer corners C 2 and C 4 , respectively.
- end locations of parts extending in the X direction of the slits 721 and 722 are the same and end locations of parts extending in the Y direction of the slits 721 and 722 ( 741 and 742 ) are the same; however, it is also permissible that these end locations are different as in a wiring pattern 60 E shown in FIG. 11 .
- a width W 63 of the section 63 in the X direction may be greater than a width W 61 of the section 61 in the Y direction and a width W 65 of the section 65 in the Y direction may be greater than the width W 63 of the section 63 in the X direction as in a wiring pattern 60 F shown in FIG. 12 .
- the section 62 is a rectangle having long sides in the X direction and the section 64 is a rectangle having long sides in the Y direction.
- the slits 721 and 722 provided in the section 62 extend in a B direction and the slits 741 and 742 provided in the section 64 extend in a C direction as shown in FIG. 12 .
- the B direction is inclined slightly toward the X direction with respect to the A direction
- the C direction is inclined slightly toward the Y direction with respect to the A direction. Therefore, an angle between the B direction and the X direction which is the extending direction of the section 61 is smaller than an angle between the B direction and the Y direction which is the extending direction of the section 63 .
- An angle between the C direction and the Y direction which is the extending direction of the section 63 is smaller than an angle between the C direction and the X direction which is the extending direction of the section 65 .
- a wiring pattern 60 G shown in FIG. 13 includes the pad area 27 connected to the via conductor 26 , a section 66 extending in the X direction, and a section 67 connecting the section 66 and the pad area 27 .
- a width Wx of the pad area 27 in the X direction is greater than a width Wy of the pad area 27 in the Y direction.
- the virtual boundary B 5 is a virtual boundary between the section 66 and the section 67 and is on an extended line of one edge Y 3 of the pad area 27 .
- the virtual boundary B 6 is a virtual boundary between the section 67 and the pad area 27 and is on an extended line of one edge X 3 of the section 66 .
- the section 67 is a rectangle having long sides in the X direction.
- a plurality of slits 76 extending in the X direction are provided in the section 66 and a plurality of slits 77 extending in the B direction are provided in the section 67 .
- No slits are provided in the pad area 27 .
- the B direction is inclined slightly toward the X direction with respect to the A direction. In this way, the slits 77 may be provided in the section 67 connecting the pad area 27 and the section 66 .
Abstract
Disclosed herein is an apparatus that includes a semiconductor substrate having a main surface extending in a first direction and a second direction different from the first direction and a conductive pattern formed over the main surface of the semiconductor substrate. The conductive pattern includes a first section extending in the first direction, a second section extending in the second direction, and a third section connected between the first and second sections. The third section of the conductive pattern has a first slit extending in a third direction different from the first and second directions.
Description
- There are cases where slits are formed on a wiring pattern of a semiconductor device to increase its yield ratio. However, the flow of current is at a risk of being disturbed by the slits depending on the shape of the wiring pattern.
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FIG. 1 is a block diagram showing a circuit configuration of a semiconductor device according to one embodiment of the present disclosure; -
FIG. 2 is a schematic sectional view for explaining a configuration of the semiconductor device according to one embodiment of the present disclosure; -
FIG. 3 is a schematic perspective view showing a part of an iRDL; -
FIG. 4 is a schematic plan view of a wiring pattern extending in the X direction; -
FIG. 5 is a schematic plan view of a wiring pattern extending in the Y direction; -
FIGS. 6 to 12 are schematic plan views of a crank-shaped wiring pattern; and -
FIG. 13 is a schematic plan view of a wiring pattern including a pad area. - Various embodiments of the present disclosure will be explained below in detail with reference to the accompanying drawings. The following detailed description refers to the accompanying drawings that show, by way of illustration, specific aspects, and various embodiments of the present disclosure. The detailed description provides sufficient detail to enable those skilled in the art to practice these embodiments of the present disclosure. Other embodiments may be utilized, and structural, logical, and electrical changes may be made without departing from the scope of the present disclosure. The various embodiments disclosed herein are not necessary mutually exclusive, as some disclosed embodiments can be combined with one or more other disclosed embodiments to form new embodiments.
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FIG. 1 is a block diagram showing a circuit configuration of a semiconductor device according to one embodiment of the present disclosure. The semiconductor device shown inFIG. 1 includes a plurality ofcircuit blocks 10, and power supply lines L1 and L2 supplying power to thecircuit blocks 10. The power supply line L1 is connected to apower supply terminal 11 supplied with a power potential VDD, and supplies the power potential VDD to thecircuit blocks 10. The power supply line L2 is connected to apower supply terminal 12 supplied with a ground potential VSS, and supplies the ground potential VSS to thecircuit blocks 10. -
FIG. 2 is a schematic sectional view for explaining a configuration of the semiconductor device according to one embodiment of the present disclosure. As shown inFIG. 2 , the semiconductor device according to the present embodiment includes asemiconductor substrate 20, and a plurality of wiring layers M0 to M5 stacked on amain surface 20A of thesemiconductor substrate 20 with an interlayerdielectric film 21 interposed therebetween. Themain surface 20A of thesemiconductor substrate 20 constitutes an XY plane. The wiring layers M0 to M5 are stacked in a Z direction on themain surface 20A of thesemiconductor substrate 20 and all extend in parallel to themain surface 20A of thesemiconductor substrate 20. Atransistor 30 is formed on thesemiconductor substrate 20. Thetransistor 30 includes asource region 31, adrain region 32, and agate electrode 33. The wiring layer M0 is positioned in a lowermost layer and a part thereof is connected to thesource region 31 of thetransistor 30 through avia conductor 25. The wiring layer M5 is positioned in an uppermost layer and a part thereof is connected to an iRDL (inline redistribution layer) 23 through avia conductor 26. TheiRDL 23 is a rewiring layer positioned in a higher layer than the wiring layer M5 and the wiring width and wiring thickness are significantly greater than those of the wiring layer M5 as shown inFIG. 3 which is a schematic diagram. The wiring layer M5 has apad area 27 connected to thevia conductor 26. Most of theiRDL 23 is covered by aprotective film 22. A part of the iRDL 23 is exposed from theprotective film 22 and this part is used as anexternal terminal 24. Generally, the wiring widths and wiring thicknesses of the wiring layers M0 to M5 are greater in upper layers. Slits are formed on the wiring layer M5 having the greatest wiring width and wiring thickness for the purpose of reducing stress. - For example, when a
wiring pattern 40 located on the wiring layer M5 extends in the X direction as shown inFIG. 4 , a plurality ofslits 41 extending in the X direction are provided on thewiring pattern 40. When awiring pattern 50 located on the wiring layer M5 extends in the Y direction as shown inFIG. 5 , a plurality of slits 51 extending in the Y direction are formed on thewiring pattern 50. The X direction and the Y direction form an angle of 90 degrees. When slits along the extending direction of a wiring pattern are provided in this way, the flow of current is not greatly disturbed. Further, when awiring pattern 60 located on the wiring layer M5 are crank-shaped as shown inFIG. 6 , a plurality of slits are provided along the direction of the flow of current. - The
wiring pattern 60 shown inFIG. 6 includessections section 63 extending in the Y direction, asection 62 connecting thesection 61 and thesection 63, and asection 64 connecting thesection 63 and thesection 65. In the example shown inFIG. 6 , a width W61 of thesection 61 in the Y direction, a width W63 of thesection 63 in the X direction, and a width W65 of thesection 65 in the Y direction are equal to each other. Therefore, thesections sections 61 to 65, these sections are virtually defined by virtual boundaries B1 to B4. The virtual boundary B1 is a virtual boundary between thesection 61 and thesection 62 and is on an extended line of one edge Y1 of thesection 63. The virtual boundary B2 is a virtual boundary between thesection 62 and thesection 63 and is on an extended line of one edge X1 of thesection 61. The virtual boundary B3 is a virtual boundary between thesection 63 and thesection 64 and is on an extended line of one edge X2 of thesection 65. The virtual boundary B4 is a virtual boundary between thesection 64 and thesection 65 and is on an extended line of the other edge Y2 of thesection 63. - A plurality of
slits sections slits 73 extending in the Y direction are provided in thesection 63. A plurality ofslits section 62. A plurality ofslits section 64. These slits are all completely surrounded by thewiring pattern 60 and do not communicate with an edge of thewiring pattern 60. The A direction forms an angle of 45 degrees with the X direction and the Y direction. Thesection 62 has an inner corner C1 at which the edge X1 and the edge Y1 terminate, and an outer corner C2 positioned diagonally to the inner corner C1. Thesection 64 has an inner corner C3 at which the edge X2 and the edge Y2 terminate, and an outer corner C4 positioned diagonally to the inner corner C3. Theslits section 62 are positioned at the side of the inner corner C1 and the side of the outer corner C2, respectively. Theslits section 64 are positioned at the side of the inner corner C3 and the side of the outer corner C4, respectively. The distance in the X direction between oneend 721 a of theslit 721 in the A direction and the virtual boundary B1 is shorter than the distance in the X direction between theother end 721 b of theslit 721 in the A direction and the virtual boundary B1 while the distance in the Y direction between oneend 721 a of theslit 721 in the A direction and the virtual boundary B2 is longer than the distance in the Y direction between theother end 721 b of theslit 721 in the A direction and the virtual boundary B2. This point is also true for theslit 722. Similarly, the distance in the Y direction between oneend 741 a of theslit 741 in the A direction and the virtual boundary B3 is shorter than the distance in the Y direction between theother end 741 b of theslit 741 in the A direction and the virtual boundary B3 while the distance in the X direction between oneend 741 a of theslit 741 in the A direction and the virtual boundary B4 is longer than the distance in the X direction between theother end 741 b of theslit 741 in the A direction and the virtual boundary B4. This point is also true for theslit 742. - Assuming a virtual extended line V1 extending in the A direction along the
slit 721, the extended line V1 crosses both the virtual boundaries B1 and B2. Assuming a virtual extended line V2 extending in the A direction along theslit 722, the extended line V2 crosses both an edge E1 of thesection 62 extending in the X direction and an edge E2 of thesection 62 extending in the Y direction. Similarly, assuming a virtual extended line V3 extending in the A direction along theslit 741, the extended line V3 crosses both the virtual boundaries B3 and B4. Assuming a virtual extended line V4 extending in the A direction along the slit 724, the extended line V4 crosses both an edge E3 of thesection 64 extending in the Y direction and an edge E4 of thesection 64 extending in the X direction. In this way, since theslits sections wiring pattern 60 is crank-shaped. - While the lengths of the
slits FIG. 6 , the lengths of theslits slits wiring pattern 60A shown inFIG. 7 . With this configuration, the resistances of thesections slits wiring pattern 60B shown inFIG. 8 . In this case, the extending directions of divided parts of each slit may be the same as each other or may be different from each other as shown inFIG. 8 . In the example shown inFIG. 8 , the extending directions ofslits section 61 are oriented slightly toward the X direction with respect to the A direction, and the extending directions ofslits section 63 are oriented slightly toward the Y direction with respect to the A direction. Similarly, the extending directions of theslits section 63 are oriented slightly toward the Y direction with respect to the A direction, and the extending directions of theslits section 65 are oriented slightly toward the X direction with respect to the A direction. Theslits FIG. 9 . In this case, the curvature radii of theslits slits - The
slits wiring pattern 60D shown inFIG. 10 . In this case, the sizes of theslits slits FIG. 10 , end locations of parts extending in the X direction of theslits 721 and 722 (741 and 742) are the same and end locations of parts extending in the Y direction of theslits 721 and 722 (741 and 742) are the same; however, it is also permissible that these end locations are different as in awiring pattern 60E shown inFIG. 11 . - Furthermore, a width W63 of the
section 63 in the X direction may be greater than a width W61 of thesection 61 in the Y direction and a width W65 of thesection 65 in the Y direction may be greater than the width W63 of thesection 63 in the X direction as in awiring pattern 60F shown inFIG. 12 . In this case, thesection 62 is a rectangle having long sides in the X direction and thesection 64 is a rectangle having long sides in the Y direction. Theslits section 62 extend in a B direction and theslits section 64 extend in a C direction as shown inFIG. 12 . The B direction is inclined slightly toward the X direction with respect to the A direction, and the C direction is inclined slightly toward the Y direction with respect to the A direction. Therefore, an angle between the B direction and the X direction which is the extending direction of thesection 61 is smaller than an angle between the B direction and the Y direction which is the extending direction of thesection 63. An angle between the C direction and the Y direction which is the extending direction of thesection 63 is smaller than an angle between the C direction and the X direction which is the extending direction of thesection 65. In this way, when thesections - A
wiring pattern 60G shown inFIG. 13 includes thepad area 27 connected to the viaconductor 26, asection 66 extending in the X direction, and asection 67 connecting thesection 66 and thepad area 27. In the example shown inFIG. 13 , a width Wx of thepad area 27 in the X direction is greater than a width Wy of thepad area 27 in the Y direction. Although there are no physical boundaries between thesections pad area 27, these are virtually defined by virtual boundaries B5 and B6. The virtual boundary B5 is a virtual boundary between thesection 66 and thesection 67 and is on an extended line of one edge Y3 of thepad area 27. The virtual boundary B6 is a virtual boundary between thesection 67 and thepad area 27 and is on an extended line of one edge X3 of thesection 66. Thesection 67 is a rectangle having long sides in the X direction. A plurality ofslits 76 extending in the X direction are provided in thesection 66 and a plurality ofslits 77 extending in the B direction are provided in thesection 67. No slits are provided in thepad area 27. The B direction is inclined slightly toward the X direction with respect to the A direction. In this way, theslits 77 may be provided in thesection 67 connecting thepad area 27 and thesection 66. - Although various embodiments have been disclosed in the context of certain preferred embodiments and examples, it will be understood by those skilled in the art that the scope of the present disclosure extends beyond the specifically disclosed embodiments to other alternative embodiments and/or uses of the embodiments and obvious modifications and equivalents thereof. In addition, other modifications which are within the scope of this disclosure will be readily apparent to those of skill in the art based on this disclosure. It is also contemplated that various combination or sub-combination of the specific features and aspects of the embodiments may be made and still fall within the scope of the disclosure. It should be understood that various features and aspects of the disclosed embodiments can be combined with or substituted for one another in order to form varying mode of the disclosed disclosure. Thus, it is intended that the scope of at least some of the present disclosure should not be limited by the particular disclosed embodiments described above.
Claims (20)
1. An apparatus comprising:
a semiconductor substrate having a main surface extending in a first direction and a second direction different from the first direction; and
a conductive pattern formed over the main surface of the semiconductor substrate,
wherein the conductive pattern includes a first section extending in the first direction, a second section extending in the second direction, and a third section connected between the first and second sections, the first section having a first edge and the second section having a second edge, and the third section having an inner corner at which the first and second edges terminate and further having an outer corner positioned diagonally to the inner corner, and
wherein the third section of the conductive pattern has a first slit extending in a third direction different from the first and second directions.
2. The apparatus of claim 1 , wherein the first slit is completely surrounded by the third section of the conductive pattern so as not to communicate with an edge of the conductive pattern.
3. The apparatus of claim 1 , wherein the first and second directions are perpendicular to each other.
4. The apparatus of claim 3 ,
wherein the first slit has first and second ends opposite to each other in the third direction,
wherein the conductive pattern has a first virtual boundary defining a boundary between the first and third sections and extending in the second direction and a second virtual boundary defining a boundary between the second and third sections and extending in the first direction,
wherein a distance between the first end and the first virtual boundary is shorter than a distance between the second end and the first virtual boundary, and
wherein a distance between the second end and the second virtual boundary is shorter than a distance between the first end and the second virtual boundary.
5. The apparatus of claim 4 , wherein a first virtual extended line extending in the third direction along the first slit crosses both the first and second virtual boundaries.
6. The apparatus of claim 4 , wherein the third section of the conductive pattern further has a second slit extending in the third direction.
7. The apparatus of claim 6 ,
wherein the first slit is arranged at the inner corner side, and
wherein the second slit is arranged at the outer corner side.
8. The apparatus of claim 7 , wherein lengths of first and second slits in the third direction are the same as each other.
9. The apparatus of claim 7 , wherein a length of the first slit in the third direction is shorter than a length of the second slit in the third direction.
10. The apparatus of claim 6 , wherein a second virtual extended line extending in the third direction along the second slit crosses both a first edge of the third section extending in the first direction and a second edge of the third section extending in the second direction.
11. An apparatus comprising:
a semiconductor substrate having a main surface extending in a first direction and a second direction different from the first direction; and
a conductive pattern formed over the main surface of the semiconductor substrate,
wherein the conductive pattern includes a first section extending in the first direction, a second section extending in the second direction, and a third section connected between the first and second sections,
wherein the third section of the conductive pattern has a first slit extending in a third direction different from the first and second directions,
wherein a pattern width of the second section in the first direction is greater than a pattern width of the first section in the second direction, and
wherein an angle between the first and third directions is smaller than an angle between the second and third directions.
12. The apparatus of claim 1 , wherein the first slit is arc-shaped.
13. An apparatus comprising:
a semiconductor substrate having a main surface extending in a first direction and a second direction different from the first direction;
a conductive pattern formed over the main surface of the semiconductor substrate;
an iRDL (inline redistribution layer) formed over the conductive pattern; and
a via conductor,
wherein the conductive pattern includes a first section extending in the first direction, a second section extending in the second direction, and a third section connected between the first and second sections,
wherein the third section of the conductive pattern has a first slit extending in a third direction different from the first and second directions, and
wherein the via conductor is connected between the iRDL and a fourth section of the conductive pattern.
14. (canceled)
15. An apparatus comprising:
a semiconductor substrate having a main surface extending in a first direction and a second direction perpendicular to the first direction; and
a conductive pattern formed over the main surface of the semiconductor substrate,
wherein the conductive pattern includes first and second sections extending in the first direction, a third section extending in the second direction, a fourth section connected between the first section and one end of the third section, and a fifth section connected between the second section and other end of the third section,
wherein the fourth section of the conductive pattern has a first slit extending in a third direction different from the first and second directions,
wherein the fifth section of the conductive pattern has a second slit extending in a fourth direction different from the first and second directions, and
wherein a pattern width of the third section in the first direction is greater than a pattern width of the first section in the second direction.
16. The apparatus of claim 15 , wherein a pattern width of the second section in the second direction is greater than the pattern width of the third section in the first direction.
17. The apparatus of claim 16 ,
wherein an angle between the first and third directions is smaller than an angle between the second and third directions, and
wherein an angle between the second and fourth directions is smaller than an angle between the first and fourth directions.
18. An apparatus comprising:
a semiconductor substrate having a main surface extending in a first direction and a second direction different from the first direction; and
a conductive pattern formed over the main surface of the semiconductor substrate,
wherein the conductive pattern includes a first section extending in the first direction, a second section extending in the second direction, and a third section connected between the first and second sections, the first section having a first edge and the second section having a second edge, and the third section having an inner corner at which the first and second edges terminate and further having an outer corner positioned diagonally to the inner corner, and
wherein the third section of the conductive pattern has a first L-shaped slit extending in the first and second directions.
19. The apparatus of claim 18 , wherein the third section of the conductive pattern further has a second L-shaped slit extending in the first and second directions.
20. The apparatus of claim 19 ,
wherein the second L-shaped slit is greater in size than the first L-shaped slit,
wherein the first L-shaped slit is arranged at the inner corner side, and
wherein the second L-shaped slit is arranged at the outer corner side.
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Citations (2)
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US5811874A (en) * | 1996-07-18 | 1998-09-22 | Samsung Electronics Co., Ltd. | Semiconductor chip package device having a rounded or chamfered metal layer guard ring |
US20120241969A1 (en) * | 2005-06-17 | 2012-09-27 | Rohm Co., Ltd. | Semiconductor integrated circuit device |
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US5811874A (en) * | 1996-07-18 | 1998-09-22 | Samsung Electronics Co., Ltd. | Semiconductor chip package device having a rounded or chamfered metal layer guard ring |
US20120241969A1 (en) * | 2005-06-17 | 2012-09-27 | Rohm Co., Ltd. | Semiconductor integrated circuit device |
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