US20230276611A1 - Semiconductor device and method of manufacturing the same - Google Patents
Semiconductor device and method of manufacturing the same Download PDFInfo
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- US20230276611A1 US20230276611A1 US18/102,897 US202318102897A US2023276611A1 US 20230276611 A1 US20230276611 A1 US 20230276611A1 US 202318102897 A US202318102897 A US 202318102897A US 2023276611 A1 US2023276611 A1 US 2023276611A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 125000006850 spacer group Chemical group 0.000 claims abstract description 233
- 230000002093 peripheral effect Effects 0.000 claims abstract description 76
- 239000000463 material Substances 0.000 claims abstract description 58
- 238000000059 patterning Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 80
- 238000009413 insulation Methods 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- 238000002955 isolation Methods 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 229920005591 polysilicon Polymers 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 230000003247 decreasing effect Effects 0.000 claims description 4
- 238000005530 etching Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000007261 regionalization Effects 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/488—Word lines
Definitions
- FIGS. 14 A to 19 B are schematic diagrams illustrating stages in a method of manufacturing a semiconductor device, according to embodiments; and FIGS. 14 A and 19 A are plan views illustrating stages in a method of manufacturing a semiconductor device in process sequence, and FIGS. 14 B, 15 to 18 , and 19 B are cross-sectional views taken along line C-C′ of FIG. 14 A .
- a process of removing the plurality of reference patterns 132 may be an etching process using an etch selectivity.
- the plurality of first spacers 142 may not be removed and may remain.
- the second portion 140 P 2 of the first spacer layer 140 L on the peripheral pattern 134 may not be removed and may remain, and the peripheral pattern 134 may be covered by the second portion 140 P 2 of the first spacer layer 140 L and thus may remain without being exposed.
- the second spacer layer 150 L may include a first portion 150 P 1 on both sidewalls of the first spacer 142 , and a second portion 150 P 2 on the second portion 140 P 2 on the peripheral pattern 134 .
- a plurality of feature patterns 122 and a bulk pattern 124 may be formed by etching the feature layer 120 by using the plurality of second spacers 152 and the peripheral pattern 134 as an etch mask.
- a second spacer layer covering the plurality of first spacers 342 and the first spacer layer 340 L may be formed on the feature layer 320 , and a plurality of second spacers 352 may be formed on both sidewalls of each of the plurality of first spacers 342 by performing an etch-back process on an upper portion of the second spacer layer.
Abstract
A method of manufacturing a semiconductor device includes forming a plurality of reference patterns and a peripheral pattern on a feature layer by using a first material such that the peripheral pattern is connected to end portions of the plurality of reference patterns; forming a plurality of first spacers on both sidewalls of each of the plurality of reference patterns by using a second material; removing the plurality of reference patterns; forming a plurality of second spacers on both sidewalls of each of the plurality of first spacers by using the first material; removing the plurality of first spacers so that the plurality of second spacers and the peripheral pattern remain on the feature layer; and patterning the feature layer by using the plurality of second spacers and the peripheral pattern as an etch mask.
Description
- This application is based on and claims priority under 35 U.S.C. §119 to Korean Patent Application No. 10-2022-0014392, filed on Feb. 3, 2022, in the Korean Intellectual Property Office, the disclosure of which is incorporated by reference herein in their entirety.
- Embodiments relate to a semiconductor device and a method of manufacturing the same.
- As semiconductor devices are downscaled, a size of an individual fine circuit pattern for implementing semiconductor devices may be progressively reduced. A photolithography process could have a limitation in resolution, and there could be a limitation in decreasing a pitch of a fine pattern.
- The embodiments may be realized by providing a method of manufacturing a semiconductor device, the method including forming a plurality of reference patterns and a peripheral pattern on a feature layer by using a first material such that the peripheral pattern is connected to end portions of the plurality of reference patterns; forming a plurality of first spacers on both sidewalls of each of the plurality of reference patterns by using a second material; removing the plurality of reference patterns; forming a plurality of second spacers on both sidewalls of each of the plurality of first spacers by using the first material; removing the plurality of first spacers so that the plurality of second spacers and the peripheral pattern remain on the feature layer; and patterning the feature layer by using the plurality of second spacers and the peripheral pattern as an etch mask.
- The embodiments may be realized by providing a method of manufacturing a semiconductor device, the method including forming a plurality of reference patterns and a peripheral pattern on a feature layer such that the peripheral pattern is connected to end portions of the plurality of reference patterns; forming a plurality of first spacers on both sidewalls of each of the plurality of reference patterns; removing the plurality of reference patterns; forming a plurality of second spacers on both sidewalls of each of the plurality of first spacers; forming a gap-fill insulation layer on the feature layer such that the gap-fill insulation layer fills a space between the plurality of second spacers; removing the gap-fill insulation layer and the plurality of first spacers such that the plurality of second spacers and the peripheral pattern remain on the feature layer; and patterning the feature layer by using the plurality of second spacers and the peripheral pattern as an etch mask.
- The embodiments may be realized by providing a method of manufacturing a semiconductor device, the method including providing a substrate including a cell array region and a boundary region; forming a feature layer on the substrate; forming a plurality of reference patterns and a peripheral pattern on the feature layer by using a first material, the plurality of reference patterns being on the cell array region, and the peripheral pattern being connected to end portions of the plurality of reference patterns and on the boundary region; forming a plurality of first spacers on both sidewalls of each of the plurality of reference patterns by using a second material; removing the plurality of reference patterns; forming a plurality of second spacers on both sidewalls of each of the plurality of first spacers by using the first material; removing the plurality of first spacers such that the plurality of second spacers and the peripheral pattern remain on the feature layer; patterning the feature layer by using the plurality of second spacers and the peripheral pattern as an etch mask; and removing a portion of the substrate by using the feature layer as an etch mask to form a device isolation trench.
- The embodiments may be realized by providing a semiconductor device including a substrate including a cell array region and a boundary region; a device isolation trench including a first portion extending in a first direction on the cell array region of the substrate and a second portion connected to the first portion on the boundary region; and a device isolation layer filling the device isolation trench and defining an active region in the substrate, wherein the first portion of the device isolation trench includes a first trench, a second trench, a third trench, and a fourth trench sequentially arranged in a second direction intersecting the first direction, a length of the first trench is greater than a length of the second trench, and a length of the third trench is greater than a length of the fourth trench.
- The embodiments may be realized by providing a semiconductor device including a substrate including a cell array region and a boundary region; a plurality of line patterns arranged on the cell array region of the substrate to extend in parallel; and an align key pattern on the boundary region of the substrate, wherein the align key pattern includes a main pattern having a first height; and an edge pattern spaced apart from the main pattern to surround a periphery of the main pattern, the edge pattern having a second height that is the same as the first height.
- Features will be apparent to those of skill in the art by describing in detail exemplary embodiments with reference to the attached drawings in which:
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FIGS. 1A to 10B are schematic diagrams illustrating stages in a method of manufacturing a semiconductor device, according to embodiments; In detail,FIGS. 1A, 2A, 3A, 4A, 5A, 6A, 7A, 8, and 9A are horizontal cross-sectional views taken along a line at a first vertical level LV1 ofFIG. 1B in process sequence,FIG. 10A is a horizontal cross-sectional view taken along a line at a second vertical level LV2 ofFIG. 10B in process sequence, andFIGS. 1B, 2B, 3B, 4B, 5B, 6B, 7B, 9B, and 10B are cross-sectional views taken along line A-A′ ofFIG. 1A ; -
FIGS. 11A to 13 are schematic diagrams illustrating stages in a method of manufacturing a semiconductor device, according to embodiments;FIGS. 11A, 12A, and 13 are plan views illustrating stages in a method of manufacturing a semiconductor device in process sequence, andFIGS. 11B and 12B are cross-sectional views taken along line B-B′ ofFIGS. 11A and 12A ; -
FIGS. 14A to 19B are schematic diagrams illustrating stages in a method of manufacturing a semiconductor device, according to embodiments; andFIGS. 14A and 19A are plan views illustrating stages in a method of manufacturing a semiconductor device in process sequence, andFIGS. 14B, 15 to 18, and 19B are cross-sectional views taken along line C-C′ ofFIG. 14A . -
FIGS. 1A to 10B are schematic diagrams illustrating stages in a method of manufacturing a semiconductor device, according to embodiments. In detail,FIGS. 1A, 2A, 3A, 4A, 5A, 6A, 7A, 8, and 9A are horizontal cross-sectional views taken along a line at a first vertical level LV1 ofFIG. 1B in process sequence,FIG. 10A is a horizontal cross-sectional view taken along a line at a second vertical level LV2 ofFIG. 10B in process sequence, andFIGS. 1B, 2B, 3B, 4B, 5B, 6B, 7B, 9B, and 10B are cross-sectional views taken along line A-A′ ofFIG. 1A . - Referring to
FIGS. 1A and 1B , afeature layer 120 and areference pattern layer 130L may be formed on asubstrate 110. - In an implementation, the
substrate 110 may include silicon, e.g., single crystalline silicon, polycrystalline silicon, or amorphous silicon. In an implementation, thesubstrate 110 may include, e.g., germanium (Ge), silicon germanium (SiGe), silicon carbide (SiC), gallium arsenide (GaAs), indium arsenide (InAs), or indium phosphide (InP). In an implementation, thesubstrate 110 may include a conductive region, e.g., an impurity-doped well or an impurity-doped structure. As used herein, the term “or” is not an exclusive term, e.g., “A or B” would include A, B, or A and B. - The
feature layer 120 may be a layer to-be-etched, which may be used for forming a plurality of feature patterns 122 (seeFIG. 10B ) through patterning. Thefeature layer 120 may include, e.g., silicon oxide, silicon nitride, or polysilicon. Thereference pattern layer 130L may include a first material, e.g., the first material may include polysilicon or amorphous silicon. - Subsequently, a first mask pattern M10 may be formed on the
reference pattern layer 130L. The first mask pattern M10 may include a plurality of opening portions M10H which extend (e.g., lengthwise) in a second direction Y. The first mask pattern M10 may include a plurality of line patterns M12, which extend in the second direction Y, and a peripheral pattern M14 which are connected to both end portions of the plurality of line patterns M12 and surround peripheries of the plurality of line patterns M12. - Referring to
FIGS. 2A and 2B , areference pattern structure 130 including a plurality ofreference patterns 132 and aperipheral pattern 134 may be formed by patterning thereference pattern layer 130L by using the first mask pattern M10 as an etch mask. - The plurality of
reference patterns 132 may be formed at positions respectively corresponding to the plurality of line patterns M12 of the first mask pattern M10 and may each have a first width W11 in a first direction X, e.g., and may be arranged of spaced apart from one another by a first interval D11 in the first direction X. In an implementation, the plurality ofreference patterns 132 may be arranged at a first pitch P11, and when the plurality offeature patterns 122 are to be formed to have a width of 1F and a pitch of 2F (e.g., when a target feature size of the plurality offeature patterns 122 is 1F), the first pitch P11 may correspond to 8F. In an implementation, the first width W11 of each of the plurality ofreference patterns 132 may correspond to 3F, and the first interval D11 may correspond to 5F. Here, F may be an arbitrary unit, e.g., 1F would be 1 arbitrary unit, 2F would be twice the dimension of 1F or 2 arbitrary units, etc. - A
reference pattern trench 132T may be between twoadjacent reference patterns 132 of the plurality ofreference patterns 132. A top surface of thefeature layer 120 may be exposed at a bottom portion of thereference pattern trench 132T. - The
peripheral pattern 134 may be connected to both end portions of the plurality ofreference patterns 132 and may surround peripheries of the plurality ofreference patterns 132 in a plan view. Theperipheral pattern 134 may be formed at a position corresponding to the peripheral pattern M14 of the first mask pattern M10. - In an implementation, the plurality of
reference patterns 132 may be formed in or on a pattern formation region where a pattern having a fine pitch is to be formed, and theperipheral pattern 134 may be formed in or on a peripheral circuit region surrounding the pattern formation region or may be formed on a region where a pattern having a relatively large size is to be formed. In an implementation, the plurality ofreference patterns 132 may be formed on a memory cell array region, and theperipheral pattern 134 may be formed on a boundary region or a peripheral circuit region surrounding the memory cell array region. In an implementation, the plurality ofreference patterns 132 may be formed on a logic cell arrangement region, and theperipheral pattern 134 may be formed on an input/output (I/O) device arrangement region. - Referring to
FIGS. 3A and 3B , afirst spacer layer 140L may be formed on thefeature layer 120 to cover the plurality ofreference patterns 132 and theperipheral pattern 134. - A first portion 140P1 of the
first spacer layer 140L may be conformally on both sidewalls and a top surface of each of the plurality ofreference patterns 132 and on a top surface of thefeature layer 120 exposed at a bottom portion of thereference pattern trench 132T. A second portion 140P2 of thefirst spacer layer 140L may be conformally on a sidewall and a top surface of theperipheral pattern 134. - In an implementation, the
first spacer layer 140L may include a second material that is different from the first material included in the plurality ofreference patterns 132 and theperipheral pattern 134. In an implementation, the second material may include, e.g., silicon oxide, silicon nitride, or silicon oxynitride. In an implementation, thefirst spacer layer 140L may be formed by an atomic layer stack process or a chemical vapor deposition process. In an implementation, thefeature layer 120 and thefirst spacer layer 140L may include silicon oxide. - Subsequently, a second mask pattern M20 may be formed on the
first spacer layer 140L. The second mask pattern M20 may include an opening portion M20H, and the opening portion M20H may vertically overlap the plurality ofreference patterns 132 and may not vertically overlap theperipheral pattern 134. In an implementation, the first portion 140P1 of thefirst spacer layer 140L on the plurality ofreference patterns 132 may be exposed, e.g., may not be covered by the second mask pattern M20, and the second portion 140P2 of thefirst spacer layer 140L on theperipheral pattern 134 may be covered by the second mask pattern M20. - Referring to
FIGS. 4A and 4B , a plurality offirst spacers 142 may be formed on both sidewalls of each of the plurality ofreference patterns 132 by performing an etch-back process on the first portion 140P1 of thefirst spacer layer 140L which is not covered by the second mask pattern M20. - In performing the etch-back process, a portion of the first portion 140P1 of the
first spacer layer 140L on a top surface of each of the plurality ofreference patterns 132 and a portion of the first portion 140P1 of thefirst spacer layer 140L on a top surface of thefeature layer 120 at a bottom portion of thereference pattern trench 132T may be removed, and afirst spacer 142 may remain on both sidewalls of each of the plurality ofreference patterns 132. In an implementation, in performing the etch-back process, the second portion 140P2 of thefirst spacer layer 140L, e.g., where a top surface thereof is covered by the second mask pattern M20, may not be removed and may remain. - In an implementation, as seen in a vertical cross-sectional view in
FIG. 4B , the number offirst spacers 142 may be twice the number ofreference patterns 132. In an implementation, onefirst spacer 142 may be on a first sidewall of onereference pattern 132, anotherfirst spacer 142 may be on a second sidewall, which is opposite to the first sidewall, of the onereference pattern 132, and twofirst spacers 142 may be spaced apart from each other in onereference pattern trench 132T. - Subsequently, the second mask pattern M20 may be removed.
- Referring to
FIGS. 5A and 5B , the plurality ofreference patterns 132 may be removed, and the plurality offirst spacers 142 may remain on a top surface of thefeature layer 120. - In an implementation, a process of removing the plurality of
reference patterns 132 may be an etching process using an etch selectivity. In an implementation, when the plurality ofreference patterns 132 are removed, the plurality offirst spacers 142 may not be removed and may remain. In an implementation, in performing the etching process, the second portion 140P2 of thefirst spacer layer 140L on theperipheral pattern 134 may not be removed and may remain, and theperipheral pattern 134 may be covered by the second portion 140P2 of thefirst spacer layer 140L and thus may remain without being exposed. - The plurality of
first spacers 142 may each have a second width W12 in the first direction X and may be spaced apart from one another by a second interval D12 in the first direction X. In an implementation, the plurality offirst spacers 142 may be arranged at a second pitch P12, and when a target feature size of each of the plurality offeature patterns 122 is 1F, the second pitch P12 may correspond to 4F. In an implementation, the second width W12 of each of the plurality offirst spacers 142 may correspond to 1F, and the second interval D12 may correspond to 3F. - A space between two adjacent
first spacers 142 of the plurality offirst spacers 142 may be referred to as afirst spacer trench 142T, and the top surface of thefeature layer 120 may be exposed at a bottom portion of thefirst spacer trench 142T. - In an implementation, as illustrated in a described with respect to
FIGS. 4A to 5B , an etch-back process on thefirst spacer layer 140L and a process of removing the plurality ofreference patterns 132 are sequentially performed. In an implementation, the etch-back process on thefirst spacer layer 140L and the process of removing the plurality ofreference patterns 132 may be simultaneously performed. - Referring to
FIGS. 6A and 6B , asecond spacer layer 150L conformally covering the plurality offirst spacers 142 may be formed on thefeature layer 120. - The
second spacer layer 150L may include a first portion 150P1 on both sidewalls of thefirst spacer 142, and a second portion 150P2 on the second portion 140P2 on theperipheral pattern 134. - In an implementation, the
second spacer layer 150L may include the first material. In an implementation, the first material may include, e.g., polysilicon or amorphous silicon. In an implementation, thesecond spacer layer 150L may include the same first material as the first material included in the plurality of reference patterns 132 (seeFIG. 4B ) and theperipheral pattern 134, or may include the same kind of material having an etch characteristic similar to that of the first material. In an implementation, the plurality ofreference patterns 132 and theperipheral pattern 134 may include polysilicon, and thesecond spacer layer 150L may include polysilicon. In an implementation, the plurality ofreference patterns 132 and theperipheral pattern 134 may include polysilicon, and thesecond spacer layer 150L may include amorphous silicon. - Referring to
FIGS. 7A and 7B , a plurality ofsecond spacers 152 may be formed on both sidewalls of each of the plurality offirst spacers 142 by performing an etch-back process on thesecond spacer layer 150L. - In performing the etch-back process, a portion of the first portion 150P1 of the
second spacer layer 150L on a top surface of each of the plurality offirst spacers 142 and a portion of the first portion 150P1 of thesecond spacer layer 150L on the top surface of thefeature layer 120 at a bottom portion of thefirst spacer trench 142T may be removed, and asecond spacer 152 may remain on both sidewalls of each of the plurality offirst spacers 142. - In an implementation, in performing the etch-back process, a portion of the second portion 150P2 of the
second spacer layer 150L on the top surface of theperipheral pattern 134 may also be removed (e.g., together with the portion of the first portion 150P1 of thesecond spacer layer 150L), and the second portion 140P2 of thefirst spacer layer 140L on the top surface of theperipheral pattern 134 may be exposed. - In performing the etch-back process, the second portion 140P2 of the
first spacer layer 140L may be on a sidewall of theperipheral pattern 134, and a portion of the second portion 150P2 of thesecond spacer layer 150L may remain on a sidewall of the second portion 140P2 of thefirst spacer layer 140L. In an implementation, a portion of the second portion 150P2 of thesecond spacer layer 150L on a sidewall of theperipheral pattern 134 may be referred to as anedge spacer pattern 154. - In an implementation, as illustrated in
FIG. 7B , a top surface of theedge spacer pattern 154 may be at a level that is higher than (e.g., farther from the substrate in a vertical Z direction than) a top surface of each of the plurality ofsecond spacers 152. In an implementation, the top surface of each of the plurality ofsecond spacers 152 may be at a level that is lower than the top surface of each of the plurality offirst spacers 142. - In an implementation, as seen in a vertical cross-sectional view in
FIG. 7B , the number ofsecond spacers 152 may be twice the number offirst spacers 142. In an implementation, onesecond spacer 152 may be on a first sidewall of onefirst spacer 142, anothersecond spacer 152 may be on a second sidewall, which is opposite to the first sidewall, of the onefirst spacer 142, and twosecond spacers 152 may be spaced apart from each other in onefirst spacer trench 142T. - The plurality of
second spacers 152 may each have a third width W13 in the first direction X and may be spaced apart from one another by a third interval D13 in the first direction X. In an implementation, the plurality ofsecond spacers 152 may be arranged at a third pitch P13, and when a target feature size of each of the plurality offeature patterns 122 is 1F, the third pitch P13 may correspond to 2F. In an implementation, the third width W13 of each of the plurality ofsecond spacers 152 may correspond to 1F, and the third interval D13 may correspond to 1F. - Subsequently, a gap-
fill insulation layer 160 may be formed to cover thefeature layer 120, the plurality offirst spacers 142, and the plurality ofsecond spacers 152 and may fill thefirst spacer trench 142T. - The gap-
fill insulation layer 160 may include the second material. In an implementation, the second material may include, e.g., silicon oxide, silicon nitride, silicon oxynitride, or a spin-on hardmask (SOH). In an implementation, the gap-fill insulation layer 160 may include the same material as a material included in the plurality offirst spacers 142, or may include the same kind of material having an etch characteristic similar to that of the material. In an implementation, the plurality offirst spacers 142 may include silicon oxide, and the gap-fill insulation layer 160 may include silicon oxide. In an implementation, the plurality offirst spacers 142 may include silicon oxide, and the gap-fill insulation layer 160 may include an SOH. - In an implementation, the gap-
fill insulation layer 160 may be formed to have a top level where a top level of a portion of the gap-fill insulation layer 160 on theperipheral pattern 134 and the second portion 140P2 of thefirst spacer layer 140L is higher than a portion of the gap-fill insulation layer 160 on a top surface of each of the plurality offirst spacers 142 and the plurality ofsecond spacers 152. - Referring to
FIG. 8 , a planarization process may be performed on an upper portion of the gap-fill insulation layer 160. Through the planarization process, a height difference between a top level of the gap-fill insulation layer 160 on the second portion 140P2 of thefirst spacer layer 140L and a top level of the gap-fill insulation layer 160 on the plurality ofsecond spacers 152 may be reduced. - In an implementation, as illustrated in
FIG. 8 , the planarization process may be performed until the gap-fill insulation layer 160 has a certain thickness and remains on the second portion 140P2 of thefirst spacer layer 140L. In an implementation, the planarization process may be performed until all of the gap-fill insulation layer 160 is removed from the second portion 140P2 of thefirst spacer layer 140L and a top surface of the second portion 140P2 of thefirst spacer layer 140L is exposed. In this case, the gap-fill insulation layer 160 may fill only a space between the plurality ofsecond spacers 152. - Referring to
FIGS. 9A and 9B , by removing the plurality offirst spacers 142 and the gap-fill insulation layer 160, the plurality ofsecond spacers 152 and theperipheral pattern 134 may remain on thefeature layer 120. - In an implementation, the plurality of
first spacers 142 and the gap-fill insulation layer 160 may include the same second material or the same kind of materials having similar etch characteristics, and thus, a process of removing the plurality offirst spacers 142 and the gap-fill insulation layer 160 may be performed at an etching step using the same etch recipe or etchant. - In an implementation, the process of removing the plurality of
first spacers 142 and the gap-fill insulation layer 160 may be performed under etchings conditions having an etch selectivity with respect to the plurality ofsecond spacers 152 and theperipheral pattern 134. In performing an etching process of removing the plurality offirst spacers 142 and the gap-fill insulation layer 160, the plurality ofsecond spacers 152 and theperipheral pattern 134 may not be removed, and may remain. In an implementation, the second portion 140P2 of thefirst spacer layer 140L on a sidewall of theperipheral pattern 134 may be removed, and only the second portion 140P2 of thefirst spacer layer 140L under theedge spacer pattern 154 may remain. - Subsequently, a plurality of
feature patterns 122 and abulk pattern 124 may be formed by etching thefeature layer 120 by using the plurality ofsecond spacers 152 and theperipheral pattern 134 as an etch mask. - The plurality of
feature patterns 122 may be formed at positions respectively corresponding to (e.g., underlying) the plurality ofsecond spacers 152, and thebulk pattern 124 may be formed at a position corresponding to theperipheral pattern 134. Anedge pattern 122E may be formed at a position corresponding to theedge spacer pattern 154. - In an implementation, the plurality of
feature patterns 122 may each have a fourth width W2 in the first direction X and may be spaced apart from one another by a fourth interval D2 in the first direction X. In an implementation, the plurality offeature patterns 122 may be arranged at a fourth pitch P2, and when a target feature size of each of the plurality offeature patterns 122 is 1F, the fourth pitch P2 may correspond to 2F. In an implementation, the fourth width W2 of each of the plurality offeature patterns 122 may correspond to 1F, and the fourth interval D2 may correspond to 1F. - Referring to
FIGS. 10A and 10B , depending on the case, the plurality ofsecond spacers 152, theperipheral pattern 134, and theedge spacer pattern 154 may be removed, and the plurality offeature patterns 122 and thebulk pattern 124 may remain. - According to a method of manufacturing a semiconductor device according to embodiments, the plurality of
feature patterns 122 having a fine pitch may be formed based on quadruple patterning technology using a simple stack configuration. - In quadruple patterning technology, a double patterning process may be performed twice by using a stack configuration which includes a plurality of pattern transfer sacrificial layers and has a relatively large height. A first spacer having a pitch of 4F may be formed on a sidewall of a reference pattern having a pitch of 8F, a first sacrificial pattern may be formed in a first sacrificial layer under the first spacer, a second spacer having a pitch of 2F may be formed on a sidewall of the first sacrificial pattern, a second sacrificial pattern may be formed in a second sacrificial layer under the second spacer, and a plurality of feature patterns may be formed by using the second sacrificial pattern. A tail portion or an inclined portion could be formed at a sidewall of the first sacrificial layer in a process of etching a carbon material used as the first sacrificial layer, and a process error or defect could occur in a process of etching a polysilicon material used as the second sacrificial layer.
- According to an embodiment, the plurality of
reference patterns 132 may be removed after thefirst spacer 142 is formed on both sidewalls of each of the plurality ofreference patterns 132, thefirst spacer 142 may be removed after thesecond spacer 152 is formed of the same material or the same kind of material as that of thereference pattern 132 on both sidewalls of thefirst spacer 142, and thefeature layer 120 may be patterned by using thesecond spacer 152. The plurality ofreference patterns 132 and thesecond spacer 152 may include the same material, and only a pattern formation region may be patterned at a fine pitch in a state where a peripheral region (e.g., the peripheral pattern 134) of each of the plurality ofreference patterns 132 is covered. Therefore, pattern transfer processes using the first sacrificial layer and the second sacrificial layer may be omitted, and a process error or defect occurring due to the first and second sacrificial layers may be reduced or prevented. Therefore, according to the method of manufacturing the semiconductor device, a patterning process for a fine pattern may be precisely adjusted. -
FIGS. 11A to 13 are schematic diagrams illustrating stages in a method of manufacturing asemiconductor device 200, according to embodiments.FIGS. 11A, 12A, and 13 are plan views illustrating stages in a method of manufacturing thesemiconductor device 200 in process sequence, andFIGS. 11B and 12B are cross-sectional views taken along line B-B′ ofFIGS. 11A and 12A . - Referring to
FIGS. 11A and 11B , a plurality offeature patterns 222 and abulk pattern 224 may be formed on asubstrate 210 by performing a process described above with reference toFIGS. 1A to 10 . - The
substrate 210 may include a cell array region MCA and a boundary region BA, the plurality offeature patterns 222 may extend in a first diagonal direction D1 on the cell array region MCA, and thebulk pattern 224 may be on the boundary region BA. - In an implementation, the cell array region MCA may be a region where unit memory cells of a dynamic random access memory (DRAM) device are to be formed, and the boundary region BA may be a region where a peripheral circuit for driving the unit memory cells formed in the cell array region MCA is to be formed.
- In an implementation, the plurality of
feature patterns 222 may be formed of silicon oxide. The plurality offeature patterns 222 may include a plurality of line patterns extending in the first diagonal direction D1, and thebulk pattern 224 may be connected to end portions of the plurality offeature patterns 222 and may surround the plurality offeature patterns 222 in a plan view. - The plurality of
feature patterns 222 may include a plurality of sets each including line patterns, and one set including the line patterns may include a first line pattern LP1, a second line pattern LP2, a third line pattern LP3, and a fourth line pattern LP4, which are continuously arranged. - In an implementation, an extension portion of the second line pattern LP2 and an extension portion of the third line pattern LP3 each extending to the boundary region BA may be connected to each other, and a portion at which the extension portion of the second line pattern LP2 is connected to the extension portion of the third line pattern LP3 may be referred to as an extension portion edge pattern LPE. The extension portion edge pattern LPE may correspond to an
edge pattern 122E formed by using, as an etch mask, theedge spacer pattern 154 described above with reference toFIGS. 9A and 9B . - In an implementation, a length of the extension portion of the second line pattern LP2 and a length of the extension portion of the third line pattern LP3 may be greater than a length of an extension portion of the fourth line pattern LP4 and a length of an extension portion of the first line pattern LP1.
- A plurality of sets each including trenches may be arranged between two adjacent line patterns of a plurality of sets each including line patterns of the plurality of
feature patterns 222. One set including the trenches may include a first trench FT1, a second trench FT2, a third trench FT3, and a fourth trench FT4, which are consecutively arranged. In an implementation, the first trench FT1 may be between the first line pattern LP1 and the second line pattern LP2, the second trench FT2 may be between the second line pattern LP2 and the third line pattern LP3, the third trench FT3 may be between the third line pattern LP3 and the fourth line pattern LP4, and the fourth trench FT4 may be between the fourth line pattern LP4 and the first line pattern LP1. - In an implementation, an extension portion of the first trench FT1 and an extension portion of the third trench FT3 each extending to the boundary region BA may be connected to each other. In an implementation, the extension portion of the first trench FT1 and the extension portion of the third trench FT3 may surround an extension portion of the second trench FT2 and may be connected to each other one-dimensionally. An extension portion of the fourth trench FT4 may be surrounded by the
bulk pattern 224 and may not be connected to the other trenches. - Referring to
FIGS. 12A and 12B , a mask pattern may be formed on the plurality offeature patterns 222 and thebulk pattern 224, and a plurality of active region patterns ACP may be formed by removing a portion of each of the plurality offeature patterns 222. The plurality of active region patterns ACP may have a plurality of island shapes having a long axis in the first diagonal direction D1. - Subsequently, a
device isolation trench 230T may be formed by removing a portion of thesubstrate 210 by using the plurality of active region patterns ACP and thebulk pattern 224 as an etch mask, and adevice isolation layer 230 may be formed of an insulating material in thedevice isolation trench 230T. A plurality of active regions AC may be defined by thedevice isolation layer 230. - On the boundary region BA, a portion of the
device isolation trench 230T may have a shape where a first extension portion TE1, a second extension portion TE2, a third extension portion TE3, and a fourth extension portion TE4 are repeatedly arranged. In an implementation, the first extension portion TE1 may be connected to the third extension portion TE3. In an implementation, a connection portion between the first extension portion TE1 and the third extension portion TE3 may surround the second extension portion TE2 in a plan view. The first extension portion TE1 and the third extension portion TE3 may have a length that is greater than that of the second extension portion TE2. The first extension portion TE1 and the third extension portion TE3 may have a length that is greater than that of the fourth extension portion TE4. - In an implementation, a portion of the
substrate 210 corresponding to the extension portion edge pattern LPE may be referred to as aboundary edge pattern 210E. Theboundary edge pattern 210E may be surrounded by thedevice isolation layer 230 and may include a portion having a U-shape in a plan view. - Referring to
FIG. 13 , a word line trench extending in the first direction X may be formed in thesubstrate 210, and a word line WL including a plurality of gate dielectric layers and a plurality of gate electrodes may be formed in a word line trench. - Subsequently, a direct contact connected to the active region AC and a bit line BL connected to the direct contact to extend in the second direction Y may be formed on the
substrate 210. A contact connected to the active region AC may be formed between adjacent bit lines BL, and a storage node may be formed on the contact. - In an implementation, the active region AC having a fine pitch may be formed by using the method described above with reference to
FIGS. 1A to 10B , and thus, a patterning process performed on the active region AC may be precisely adjusted. Thesemiconductor device 200 may have a good electrical characteristic. - In an implementation, as illustrated in and described with respect to
FIGS. 11A to 13 , the method of manufacturing a DRAM may use the method described above with reference toFIGS. 1A to 10B . In addition to the method of manufacturing the DRAM device, a method of manufacturing a semiconductor device according to an embodiment may include a method of manufacturing various devices such as a logic device, a flash memory device, a vertical NAND memory device, a phase change memory device, a magnetic memory device, or a complementary metal-oxide semiconductor (CMOS) image sensor by using the method described above with reference toFIGS. 1A to 10B . -
FIGS. 14A to 19B are schematic diagrams illustrating stages in a method of manufacturing asemiconductor device 300, according to embodiments.FIGS. 14A and 19A are plan views illustrating stages in a method of manufacturing a semiconductor device in process sequence, andFIGS. 14B, 15 to 18, and 19B are cross-sectional views taken along line C-C′ ofFIG. 14A . - Referring to
FIGS. 14A and 14B , afeature layer 320 may be formed on asubstrate 310 including a cell array region MCA and a boundary region BA. - A reference pattern layer may be formed on the
feature layer 320, a plurality ofreference patterns 332 may be formed on the cell array region MCA by patterning the reference pattern layer, and an alignkey reference pattern 334 may be formed on the boundary region BA. In an implementation, the plurality ofreference patterns 332 and the alignkey reference pattern 334 may be formed of a first material, and the first material may include polysilicon or amorphous silicon. - Referring to
FIG. 15 , afirst spacer layer 340L covering the plurality ofreference patterns 332 and the alignkey reference pattern 334 may be formed on thefeature layer 320, and a mask pattern covering the alignkey reference pattern 334 may be formed on thefirst spacer layer 340L. - Subsequently, a plurality of
first spacers 342 may be formed on both sidewalls of each of the plurality ofreference patterns 332 by performing an etch-back process on an upper portion of thefirst spacer layer 340L not covered by the mask pattern. The plurality offirst spacers 342 may be formed of a second material, and the second material may include silicon oxide, silicon nitride, or silicon oxynitride. - In an implementation, the
first spacer layer 340L covering a top surface and a sidewall of the alignkey reference pattern 334 may not be removed in the etch-back process and may remain. - Referring to
FIG. 16 , the plurality ofreference patterns 332 may be removed, and the plurality offirst spacers 342 may be formed on the cell array region MCA. - In an implementation, a process of removing the plurality of
reference patterns 332 may include an etching process using an etch selectivity, e.g., thefirst spacer layer 340L may be etched by a very small amount or may be hardly etched and may remain on the boundary region BA, and a top surface of the alignkey reference pattern 334 may not be exposed. - Referring to
FIG. 17 , a second spacer layer covering the plurality offirst spacers 342 and thefirst spacer layer 340L may be formed on thefeature layer 320, and a plurality ofsecond spacers 352 may be formed on both sidewalls of each of the plurality offirst spacers 342 by performing an etch-back process on an upper portion of the second spacer layer. - In this case, a portion of the second spacer layer may remain on a sidewall of the align
key reference pattern 334 and may be referred to as anedge spacer pattern 354. - In an implementation, the
second spacer 352 may be formed of a first material, and the first material may include polysilicon or amorphous silicon. In an implementation, thesecond spacer 352 may include the same material as the first material included in the plurality ofreference patterns 332 and the alignkey reference pattern 334, or may include a similar or same kind of material having an etch characteristic similar to that of the first material. - Subsequently, a gap-fill insulation layer 360 filling a space between the plurality of
second spacers 352 may be formed on thefeature layer 320. The gap-fill insulation layer 360 may include a second material, and the second material may include silicon oxide, silicon nitride, silicon oxynitride, or an SOH.. In an implementation, the gap-fill insulation layer 360 may include the same material as a material included in the plurality offirst spacers 342, or may include the same kind of material having an etch characteristic similar to that of the material. In an implementation, the plurality offirst spacers 342 may include silicon oxide, and the gap-fill insulation layer 360 may include silicon oxide. In an implementation, the plurality offirst spacers 342 may include silicon oxide, and the gap-fill insulation layer 360 may include an SOH. - In an implementation, a planarization process may be performed on an upper portion of the gap-fill insulation layer 360.
- Referring to
FIG. 18 , the plurality ofsecond spacers 352, theedge spacer pattern 354, and the alignkey reference pattern 334 may remain on thefeature layer 320 by removing the plurality offirst spacers 342 and the gap-fill insulation layer 360. - In an implementation, the plurality of
first spacers 342 and the gap-fill insulation layer 360 may include the same second material or the same kind of materials having similar etch characteristics, and thus, a process of removing the plurality offirst spacers 342 and the gap-fill insulation layer 360 may be performed at an etching step (e.g., single etching step) using the same etchant. In an implementation, the process of removing the plurality offirst spacers 342 and the gap-fill insulation layer 360 may be performed under etching conditions having an etch selectivity with respect to the plurality ofsecond spacers 352 and the alignkey reference pattern 334. - Referring to
FIGS. 19A and 19B , a plurality offeature patterns 322 and an align key pattern AK may be formed by etching thefeature layer 320 by using the plurality ofsecond spacers 352, theedge spacer pattern 354, and the alignkey reference pattern 334 as an etch mask. - The plurality of
feature patterns 322 may be formed at positions respectively corresponding to the plurality ofsecond spacers 352, and the align key pattern AK may be formed at a position corresponding to theedge spacer pattern 354 and the alignkey reference pattern 334. - In an implementation, the plurality of
feature patterns 322 may each have a first width W31 in the first direction X and may be spaced apart from one another by a first interval D31 in the first direction X. In an implementation, the plurality offeature patterns 322 may be arranged at a first pitch P3, and when a target feature size of each of the plurality offeature patterns 322 is 1F, the first pitch P3 may correspond to 2F. In an implementation, the first width W31 of each of the plurality offeature patterns 322 may correspond to 1F, and the first interval D31 may correspond to 1F. - In an implementation, the align key pattern AK may include a main pattern AKM and an edge pattern AKE. The main pattern AKM may have a second width W32, and the second width W32 may be greater than the first width W31 of each of the plurality of
feature patterns 322. - In an implementation, the edge pattern AKE may surround the main pattern AKM in a plan view and may be spaced apart from the main pattern AKM by a second interval D32. In an implementation, the second interval D32 may be the same as the first interval D31. The second interval D32 may correspond to 1F. The edge pattern AKE may have a third width W33, and the third width W33 may be less than the second width W32 and may be equal to the first width W31. In an implementation, the third width W33 may correspond to 1F.
- The edge pattern AKE may be formed to have the same height (e.g., in the Z direction) as that of the main pattern AKM at a periphery of the main pattern AKM. In an implementation, the main pattern AKM may have a first height H31, and the edge pattern AKE may have a second height H32 which is the same as the first height H31.
- In an implementation, the align key pattern AK may be formed along with the plurality of
feature patterns 322 having a fine pitch, and a patterning process performed on the plurality offeature patterns 322 having a fine pitch may be precisely adjusted. - By way of summation and review, patterning technologies such as double patterning technology (DPT) and quadruple patterning technology (QPT) may form a fine pattern that is more reduced in a resolution limitation of a photolithography process.
- One or more embodiments may provide a method of manufacturing a semiconductor device by using quadruple patterning technology.
- One or more embodiments may provide a method of manufacturing a semiconductor device, in which a fine pattern having a reduced width may be formed.
- Example embodiments have been disclosed herein, and although specific terms are employed, they are used and are to be interpreted in a generic and descriptive sense only and not for purpose of limitation. In some instances, as would be apparent to one of ordinary skill in the art as of the filing of the present application, features, characteristics, and/or elements described in connection with a particular embodiment may be used singly or in combination with features, characteristics, and/or elements described in connection with other embodiments unless otherwise specifically indicated. Accordingly, it will be understood by those of skill in the art that various changes in form and details may be made without departing from the spirit and scope of the present invention as set forth in the following claims.
Claims (21)
1. A method of manufacturing a semiconductor device, the method comprising:
forming a plurality of reference patterns and a peripheral pattern on a feature layer by using a first material such that the peripheral pattern is connected to end portions of the plurality of reference patterns;
forming a plurality of first spacers on both sidewalls of each of the plurality of reference patterns by using a second material;
removing the plurality of reference patterns;
forming a plurality of second spacers on both sidewalls of each of the plurality of first spacers by using the first material;
removing the plurality of first spacers so that the plurality of second spacers and the peripheral pattern remain on the feature layer; and
patterning the feature layer by using the plurality of second spacers and the peripheral pattern as an etch mask.
2. The method as claimed in claim 1 , wherein:
the first material includes polysilicon or amorphous silicon, and
the second material includes silicon oxide, silicon nitride, or silicon oxynitride.
3. The method as claimed in claim 1 , wherein, in a plan view, the peripheral pattern surrounds the plurality of reference patterns.
4. The method as claimed in claim 1 , wherein:
the plurality of reference patterns are arranged at a pitch of 8F,
the plurality of first spacers are arranged at a pitch of 4F, and
the plurality of second spacers are arranged at a pitch of 2F.
5. The method as claimed in claim 1 , wherein forming the plurality of first spacers includes:
forming a first spacer layer on the feature layer to cover the plurality of reference patterns and the peripheral pattern;
forming a mask pattern on the first spacer layer such that the mask pattern does not cover a first portion of the first spacer layer on the plurality of reference patterns and does cover a second portion of the first spacer layer on the peripheral pattern; and
removing some portions of the first portion of the first spacer layer from a top surface of each of the plurality of reference patterns such that the plurality of first spacers remain on both sidewalls of the plurality of reference patterns.
6. The method as claimed in claim 5 , wherein, in the removing of the plurality of reference patterns, the second portion of the first spacer layer remains and covers a top surface of the peripheral pattern.
7. The method as claimed in claim 5 , further comprising forming a gap-fill insulation layer that fills a space between the plurality of second spacers, on the feature layer, after forming the plurality of second spacers,
wherein removing the plurality of first spacers further includes removing the gap-fill insulation layer.
8. The method as claimed in claim 7 , further comprising performing a planarization process on an upper portion of the gap-fill insulation layer such that a difference between a top level of the gap-fill insulation layer on the second portion of the first spacer layer and a top level of the gap-fill insulation layer on the plurality of second spacers is decreased, after forming the gap-fill insulation layer.
9. The method as claimed in claim 7 , wherein the gap-fill insulation layer includes silicon oxide, silicon nitride, silicon oxynitride, or a spin-on hardmask (SOH).
10. A method of manufacturing a semiconductor device, the method comprising:
forming a plurality of reference patterns and a peripheral pattern on a feature layer such that the peripheral pattern is connected to end portions of the plurality of reference patterns;
forming a plurality of first spacers on both sidewalls of each of the plurality of reference patterns;
removing the plurality of reference patterns;
forming a plurality of second spacers on both sidewalls of each of the plurality of first spacers;
forming a gap-fill insulation layer on the feature layer such that the gap-fill insulation layer fills a space between the plurality of second spacers;
removing the gap-fill insulation layer and the plurality of first spacers such that the plurality of second spacers and the peripheral pattern remain on the feature layer; and
patterning the feature layer by using the plurality of second spacers and the peripheral pattern as an etch mask.
11. The method as claimed in claim 10 , wherein:
the plurality of reference patterns, the peripheral pattern, and the plurality of first spacers include polysilicon or amorphous silicon, and
the plurality of second spacers and the gap-fill insulation layer include silicon oxide, silicon nitride, or silicon oxynitride.
12. The method as claimed in claim 10 , wherein forming the plurality of first spacers includes:
forming a first spacer layer on the feature layer to cover the plurality of reference patterns and the peripheral pattern;
forming a mask pattern on the first spacer layer such that the mask pattern does not cover a first portion of the first spacer layer on the plurality of reference patterns and does cover a second portion of the first spacer layer on the peripheral pattern; and
removing some portions of the first portion of the first spacer layer from a top surface of each of the plurality of reference patterns such that the plurality of first spacers remain on both sidewalls of the plurality of reference patterns.
13. The method as claimed in claim 12 , wherein, in the removing of the plurality of reference patterns, the second portion of the first spacer layer remains and covers a top surface of the peripheral pattern.
14. The method as claimed in claim 12 , further comprising performing a planarization process on an upper portion of the gap-fill insulation layer such that a difference between a top level of the gap-fill insulation layer on the second portion of the first spacer layer and a top level of the gap-fill insulation layer on the plurality of second spacers is decreased, after forming the gap-fill insulation layer.
15. The method as claimed in claim 10 , wherein, in a plan view, the peripheral pattern surrounds the plurality of reference patterns.
16. The method as claimed in claim 10 , wherein:
the plurality of reference patterns are arranged at a pitch of 8F,
the plurality of first spacers are arranged at a pitch of 4F, and
the plurality of second spacers are arranged at a pitch of 2F.
17. A method of manufacturing a semiconductor device, the method comprising:
providing a substrate including a cell array region and a boundary region;
forming a feature layer on the substrate;
forming a plurality of reference patterns and a peripheral pattern on the feature layer by using a first material, the plurality of reference patterns being on the cell array region, and the peripheral pattern being connected to end portions of the plurality of reference patterns and on the boundary region;
forming a plurality of first spacers on both sidewalls of each of the plurality of reference patterns by using a second material;
removing the plurality of reference patterns;
forming a plurality of second spacers on both sidewalls of each of the plurality of first spacers by using the first material;
removing the plurality of first spacers such that the plurality of second spacers and the peripheral pattern remain on the feature layer;
patterning the feature layer by using the plurality of second spacers and the peripheral pattern as an etch mask; and
removing a portion of the substrate by using the feature layer as an etch mask to form a device isolation trench.
18. The method as claimed in claim 17 , wherein:
forming the plurality of first spacers includes:
forming a first spacer layer on the feature layer to cover the plurality of reference patterns and the peripheral pattern;
forming a mask pattern on the first spacer layer such that the mask pattern does not cover a first portion of the first spacer layer on the plurality of reference patterns and does cover a second portion of the first spacer layer on the peripheral pattern; and
removing some portions of the first portion of the first spacer layer from a top surface of each of the plurality of reference patterns such that the plurality of first spacers remain on both sidewalls of the plurality of reference patterns, and
in the removing of the plurality of reference patterns, the second portion of the first spacer layer remains and covers a top surface of the peripheral pattern.
19. The method as claimed in claim 18 , further comprising forming a gap-fill insulation layer on the feature layer such that the gap-fill insulation layer fills a space between the plurality of second spacers, after forming the plurality of second spacers,
wherein removing the plurality of first spacers further includes removing the gap-fill insulation layer.
20. The method as claimed in claim 19 , further comprising performing a planarization process on an upper portion of the gap-fill insulation layer such that a difference between a top level of the gap-fill insulation layer on the second portion of the first spacer layer and a top level of the gap-fill insulation layer on the plurality of second spacers is decreased, after forming the gap-fill insulation layer.
21-30. (canceled)
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KR1020220014392A KR20230117972A (en) | 2022-02-03 | 2022-02-03 | Semiconductor devices and manufacturing methods for the same |
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EP (1) | EP4224515A1 (en) |
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US7253118B2 (en) * | 2005-03-15 | 2007-08-07 | Micron Technology, Inc. | Pitch reduced patterns relative to photolithography features |
US8932955B1 (en) * | 2013-09-04 | 2015-01-13 | Sandisk Technologies Inc. | Triple patterning NAND flash memory with SOC |
KR20160091164A (en) * | 2015-01-23 | 2016-08-02 | 삼성전자주식회사 | Method of forming minute patterns and method manufacturing a semiconductor device using the same |
KR102460716B1 (en) * | 2017-12-26 | 2022-10-31 | 삼성전자주식회사 | Method of manufacturing integrated circuit device |
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