US20230242450A1 - Modified scheelite material for co-firing - Google Patents
Modified scheelite material for co-firing Download PDFInfo
- Publication number
- US20230242450A1 US20230242450A1 US18/089,439 US202218089439A US2023242450A1 US 20230242450 A1 US20230242450 A1 US 20230242450A1 US 202218089439 A US202218089439 A US 202218089439A US 2023242450 A1 US2023242450 A1 US 2023242450A1
- Authority
- US
- United States
- Prior art keywords
- scheelite
- dielectric
- firing
- materials
- communications
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000463 material Substances 0.000 title claims abstract description 140
- 238000010344 co-firing Methods 0.000 title description 22
- 239000002131 composite material Substances 0.000 claims abstract description 30
- 239000002223 garnet Substances 0.000 claims description 33
- 238000010304 firing Methods 0.000 claims description 31
- 230000005291 magnetic effect Effects 0.000 claims description 30
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract description 18
- 239000003989 dielectric material Substances 0.000 abstract description 9
- 229910001053 Nickel-zinc ferrite Inorganic materials 0.000 abstract description 3
- 238000004891 communication Methods 0.000 description 84
- 238000000034 method Methods 0.000 description 39
- 239000000758 substrate Substances 0.000 description 38
- 239000011734 sodium Substances 0.000 description 35
- 229910000859 α-Fe Inorganic materials 0.000 description 33
- 239000000969 carrier Substances 0.000 description 18
- 239000000853 adhesive Substances 0.000 description 17
- 230000001070 adhesive effect Effects 0.000 description 17
- 230000002776 aggregation Effects 0.000 description 17
- 238000004220 aggregation Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 15
- 229910002915 BiVO4 Inorganic materials 0.000 description 14
- 238000010586 diagram Methods 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 13
- 239000000126 substance Substances 0.000 description 13
- 229910015667 MoO4 Inorganic materials 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 11
- 230000000712 assembly Effects 0.000 description 10
- 238000000429 assembly Methods 0.000 description 10
- 239000003292 glue Substances 0.000 description 9
- 230000001965 increasing effect Effects 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 229910010293 ceramic material Inorganic materials 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- 239000004593 Epoxy Substances 0.000 description 6
- 238000007571 dilatometry Methods 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 229910052727 yttrium Inorganic materials 0.000 description 6
- 229910052797 bismuth Inorganic materials 0.000 description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 229910052596 spinel Inorganic materials 0.000 description 5
- 239000011029 spinel Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 230000001413 cellular effect Effects 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 239000000696 magnetic material Substances 0.000 description 4
- 230000005415 magnetization Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 3
- 229910052692 Dysprosium Inorganic materials 0.000 description 3
- 229910052691 Erbium Inorganic materials 0.000 description 3
- 229910052688 Gadolinium Inorganic materials 0.000 description 3
- 229910052689 Holmium Inorganic materials 0.000 description 3
- 229910052765 Lutetium Inorganic materials 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- 229910052777 Praseodymium Inorganic materials 0.000 description 3
- 229910052772 Samarium Inorganic materials 0.000 description 3
- 229910052771 Terbium Inorganic materials 0.000 description 3
- 229910052775 Thulium Inorganic materials 0.000 description 3
- 229910052769 Ytterbium Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- 229910017135 Fe—O Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- UCNNJGDEJXIUCC-UHFFFAOYSA-L hydroxy(oxo)iron;iron Chemical compound [Fe].O[Fe]=O.O[Fe]=O UCNNJGDEJXIUCC-UHFFFAOYSA-L 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052566 spinel group Inorganic materials 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- -1 Al2O3 Chemical compound 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910010171 Li2MoO4 Inorganic materials 0.000 description 1
- 229910007786 Li2WO4 Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004619 Na2MoO4 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- MTRJKZUDDJZTLA-UHFFFAOYSA-N iron yttrium Chemical compound [Fe].[Y] MTRJKZUDDJZTLA-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QELJHCBNGDEXLD-UHFFFAOYSA-N nickel zinc Chemical compound [Ni].[Zn] QELJHCBNGDEXLD-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000011684 sodium molybdate Substances 0.000 description 1
- TVXXNOYZHKPKGW-UHFFFAOYSA-N sodium molybdate (anhydrous) Chemical compound [Na+].[Na+].[O-][Mo]([O-])(=O)=O TVXXNOYZHKPKGW-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/32—Non-reciprocal transmission devices
- H01P1/38—Circulators
- H01P1/383—Junction circulators, e.g. Y-circulators
- H01P1/387—Strip line circulators
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G39/00—Compounds of molybdenum
- C01G39/006—Compounds containing, besides molybdenum, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G41/00—Compounds of tungsten
- C01G41/006—Compounds containing, besides tungsten, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
- C04B35/2675—Other ferrites containing rare earth metals, e.g. rare earth ferrite garnets
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/001—Joining burned ceramic articles with other burned ceramic articles or other articles by heating directly with other burned ceramic articles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/10—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances metallic oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/32—Non-reciprocal transmission devices
- H01P1/36—Isolators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/32—Non-reciprocal transmission devices
- H01P1/38—Circulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
- H01P5/19—Conjugate devices, i.e. devices having at least one port decoupled from one other port of the junction type
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3201—Alkali metal oxides or oxide-forming salts thereof
- C04B2235/3203—Lithium oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3227—Lanthanum oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3229—Cerium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3239—Vanadium oxides, vanadates or oxide forming salts thereof, e.g. magnesium vanadate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3256—Molybdenum oxides, molybdates or oxide forming salts thereof, e.g. cadmium molybdate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3258—Tungsten oxides, tungstates, or oxide-forming salts thereof
- C04B2235/326—Tungstates, e.g. scheelite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3298—Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
- C04B2235/762—Cubic symmetry, e.g. beta-SiC
- C04B2235/764—Garnet structure A3B2(CO4)3
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9607—Thermal properties, e.g. thermal expansion coefficient
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/84—Joining of a first substrate with a second substrate at least partially inside the first substrate, where the bonding area is at the inside of the first substrate, e.g. one tube inside another tube
Definitions
- Embodiments of the disclosure relate to co-fireable dielectric materials that can be formed without the use of adhesives.
- Circulators and isolators are passive electronic devices that are used in high-frequency (e.g., microwave) radio frequency systems to permit a signal to pass in one direction while providing high isolation to reflected energy in the reverse direction.
- Circulators and isolators commonly include a disc-shaped assembly comprising a disc-shaped ferrite or other ferromagnetic ceramic element, disposed concentrically within an annular dielectric element.
- a cylinder is formed from a dielectric ceramic material.
- the (unfired or “green”) cylinder is then fired in a kiln (commonly referred to simply as “firing”).
- the ceramic material is “fireable”.
- the outside surface of the cylinder is then machined to ensure its outside diameter (OD) is of a selected dimension. Achieving precise dimensions in the assembly elements is important because the dimensions affect microwave waveguide characteristics.
- the inside surface of the cylinder is similarly machined to ensure its inside diameter (ID) is of a selected dimension.
- a rod is formed from a magnetic ceramic material.
- the rod is then fired, and at step 24 its surface is machined to a selected OD.
- the rod OD is slightly less than the cylinder OD so that the rod can be fitted securely within the cylinder, as described below. Achieving a close fit that promotes good adhesion between the rod and cylinder is a reason that both the outside surface of the rod and the inside surface of the cylinder are machined to precise tolerances.
- step 26 epoxy adhesive is applied to the one or both of the rod and cylinder.
- step 28 the rod is inserted inside the cylinder to form a rod-and-cylinder assembly, and the epoxy is allowed to cure (harden), as indicated by step 30 .
- step 32 the outside surface of the rod-and-cylinder assembly is again machined to a precise OD.
- step 34 the rod-and-cylinder assembly is sliced into a number of disc assemblies. Each disc assembly thus comprises a magnetic ceramic disc disposed concentrically within a dielectric ceramic ring. Each disc assembly is typically several millimeters in thickness.
- a composite material for use as a radiofrequency component comprising a magnetic garnet material rod, and a ring surrounding the magnetic garnet material rod, the ring being formed from a scheelite material having a firing temperature of 950° C. or below.
- the scheelite material can have the chemical formula Li 0.05 Bi 0.95 Mo 0.1 V 0.9 O 4 .
- the scheelite material can have the chemical formula Bi 1-2x-z R z M′ x V 1-x M′′ x O 4 , R being a rare earth element La, Ce, Pr, Sm, Nd, Gd, Dy, Tb, Ho, Er, Tm, Yb, Lu, Y or Sc, M′ being Li, Na, or K, and M′′ being Mo or W.
- the scheelite material can have the chemical formula (Na,Li) 0.5x Bi 1-0.5x (Mo,W) x V 1-x O 4 , x being between 0 and 0.5.
- the scheelite material can include between 1 and 10 wt. % aluminum oxide. In some embodiments, the scheelite material can include between 2 and 6 wt. % aluminum oxide.
- the magnetic garnet material rod can include Bi, Ca, Zr, Y, Fe, and O. In some embodiments, the scheelite material can include BiVO 4 .
- the ring can reduce in diameter around the magnetic garnet material rod during firing so that no adhesive is used to connect the ring with the magnetic garnet material rod.
- the scheelite material can include (Na 0.35 Bi 0.65 )(Mo 0.7 V 0.3 )O 4 . In some embodiments, the scheelite material can include (Na 0.2 Bi 0.8 )(Mo 0.4 V 0.6 )O 4 .
- Also disclosed herein are embodiments of a method of forming a composite material for use as an isolator or circulator in a radiofrequency device the method comprising providing a magnetic garnet material rod, providing an outer ring having a scheelite crystalline structure, the outer ring having a firing temperature of 950° C. or below, entering the magnetic garnet material rod within an aperture in the outer ring, and co-firing the outer ring and the magnetic garnet material rod together at a temperature of 950° C. or below to shrink the outer ring around an outer surface of the magnetic garnet material rod without the use of adhesive or glue and form a composite material.
- the outer ring can have the chemical formula Li 0.05 Bi 0.95 Mo 0.1 V 0.9 O 4 .
- the scheelite material can have the chemical formula Bi 1-2x-z R z M′ x V 1-x M′′ x O 4 , R being a rare earth element La, Ce, Pr, Sm, Nd, Gd, Dy, Tb, Ho, Er, Tm, Yb, Lu, Y or Sc, M′ being Li, Na, or K, and M′′ being Mo or W.
- the scheelite material can have the chemical formula (Na,Li) 0.5x Bi 1-0.5x (Mo,W) x V 1-x O 4 , x being between 0 and 0.5.
- the scheelite material can include between 1 and 10 wt. % aluminum oxide.
- the scheelite material can include between 2 and 6 wt. % aluminum oxide.
- the magnetic garnet material rod can include Bi, Ca, Zr, Y, Fe, and O.
- the scheelite material can include BiVO 4 .
- the method can further include slicing the composite material.
- a radiofrequency isolator or circulator comprising a magnetic garnet material rod, and a ring surrounding the magnetic garnet material rod, the ring being formed from a scheelite material having a firing temperature of 950° C. or below.
- the ring can reduce in diameter around the magnetic garnet material rod during firing so that no adhesive is used to connect the ring with the magnetic garnet material rod.
- FIG. 1 illustrates a flow diagram of a method for fabricating composite magnetic-dielectric disc assemblies in accordance with the prior art.
- FIG. 2 schematically shows how materials having one or more features described herein can be designed, fabricated, and used.
- FIG. 3 illustrates a magnetic field v. loss chart.
- FIGS. 4 A-B illustrate an embodiment of a composite structure having a ferrite cylinder within a rectangular prism or cylindrical substrate.
- FIGS. 5 A-B illustrate an embodiment of a composite tile with a square or circle shape.
- FIG. 6 illustrates an integrated microstrip circulator without a magnet.
- FIG. 7 illustrates an integrated microstrip circulator with a magnet.
- FIG. 8 illustrates example dielectric constant regimes for certain materials.
- FIG. 9 illustrates intensity graphs for BiVO 4 .
- FIG. 10 illustrates intensity graphs for Na 0.35 Bi 0.65 Mo 0.7 V 0.3 O 4 as calcined.
- FIG. 11 illustrates dilatometry testing of scheelite materials.
- FIG. 12 illustrates dilatometry testing of BiVO 4 with 1.2% Al 2 O 3 .
- FIG. 13 illustrates an example of a co-firing cycle.
- FIG. 14 illustrates dilatometry results for Na 2 BiMg 2 V 3 O 12 .
- FIG. 15 is a schematic diagram of one example of a communication network.
- FIG. 16 is a schematic diagram of one example of a communication link using carrier aggregation.
- FIG. 17 A is a schematic diagram of one example of a downlink channel using multi-input and multi-output (MIMO) communications.
- MIMO multi-input and multi-output
- FIG. 17 B is schematic diagram of one example of an uplink channel using MIMO communications.
- FIG. 18 illustrates a schematic of an antenna system.
- FIG. 19 illustrates a schematic of an antenna system with an embodiment of an integrated microstrip circulator.
- FIG. 20 illustrates a MIMO system incorporating embodiments of the disclosure.
- FIG. 21 is a schematic diagram of one example of a mobile device.
- FIG. 22 is a schematic diagram of a power amplifier system according to one embodiment.
- FIG. 23 illustrates a method of forming a composite integrated microstrip circulator.
- FIG. 24 illustrates an embodiment of an integrated microstrip circulator for testing.
- FIG. 25 illustrates a perspective view of a cellular antenna base station incorporating embodiments of the disclosure.
- FIG. 26 illustrates housing components of a base station incorporating embodiments of the disclosed material.
- FIG. 27 illustrates a cavity filter used in a base station incorporating embodiments of the material disclosed herein.
- FIG. 28 illustrates an embodiment of a circuit board including embodiments of the material disclosed herein.
- embodiments of low firing dielectric materials can be advantageously co-fired with high dielectric materials to form composites for magnetic-dielectric assemblies, such as for isolator and circulator applications. These assemblies can be then incorporated into radiofrequency applications.
- embodiments of the disclosed materials can be co-fired without needing any adhesives, such as glue, epoxy or other chemical adhesives.
- adhesives such as glue, epoxy or other chemical adhesives.
- composites formed out of embodiments of the disclosure can be glue free, epoxy free, or adhesive free.
- Embodiments of the disclosure could advantageously allow for 5G systems, in particular operating at 3 GHz and above, to form integrated architectures which can include different components, such as antennas, circulators, amplifiers, and/or semiconductor based amplifiers. By allowing for the integration of these components onto a single substrate, this can improve the overall miniaturization of the device.
- the disclosed devices can be operable at frequencies between about 1.8 GHz and about 30 GHz. In some embodiments, the disclosed device can be operable at frequencies of greater than about 1, 2, 3, 4, 5, 10, 15, 20, or 25 GHz. In some embodiments, the disclosed device can be operable at frequencies of less than 30, 25, 20, 15, 10, 5, 4, 3, or 2 GHz.
- the integrated architecture can include a directional coupler and/or isolator in a package size which is not much larger than a standard isolator.
- the integrated architecture can include a high power switch.
- the dielectric tile as the substrate for the impedance transformer, it could also be used as the substrate for the coupler, switch and termination
- FIG. 2 schematically shows how one or more chemical elements (block 1 ), chemical compounds (block 2 ), chemical substances (block 3 ) and/or chemical mixtures (block 4 ) can be processed to yield one or more materials (block 5 ) having one or more features described herein.
- such materials can be formed into ceramic materials (block 6 ) configured to include a desirable dielectric property (block 7 ), a magnetic property (block 8 ).
- a material having one or more of the foregoing properties can be implemented in applications (block 10 ) such as radio-frequency (RF) application.
- applications can include implementations of one or more features as described herein in devices 12 .
- devices can further be implemented in products 11 . Examples of such devices and/or products are described herein.
- Circulators are passive multiport devices which can receive and transmit different signals, such as microwave or radiofrequency (RF). These ports can be an external waveguide or transmission line which connects to and from the circulator. Isolators are similar to circulators, but one or more of the ports can be blocked off. Hence, circulator and isolator can be used interchangeably herein as they can be similar in general structural. Thus, all discussion below can apply both to circulators and isolators.
- RF radiofrequency
- Microstrip circulators and isolators are devices known in the art consist of a thin film circuit deposited over a substrate, such as a dielectric ferrite substrate.
- a substrate such as a dielectric ferrite substrate.
- one or more ferrite discs can be adhered onto the substrate. Magnet(s) can then be further attached to circulate a signal through the ferrite disc.
- all-ferrite microstrip circulators have been used as well, in particular for radar T/R modules.
- Circuitry can be printed onto the all ferrite microstrip circulator and a magnet can be added on top to direct the signal.
- a metallization pattern is formed onto a ferrite substrate.
- the metallization pattern consists of a central disc and multiple transmission lines.
- Circulators generally can operate in either of the above or below resonance operating regions. This is shown in FIG. 3 .
- above-resonance frequencies can be advantageous for narrow band, sub 4 GHz circulators.
- the below resonance region can be more advantageous.
- Microstrip circulators in particular typically work in the below resonance operating region. They use a very small magnet or can be self-biased, such as in the case of hexagonal ferrites. However, square tiles can be a difficult shape to magnetize uniformly, in particular for the all-ferrite microstrip circulators known in the art. Thus, they will operate close to the low field loss region. When transformers are mounted on the lossy unmagnetized ferrite, performance suffers. Further, increased power will make the poor performance even more known. Thus, circulators known in the art suffer from issues due to the ferrite tile being poorly magnetized, leading to poor insertion loss and intermodulation distortion (IMD), and power performance.
- IMD intermodulation distortion
- Embodiments of the disclosure can improve overall magnetization and reduce performance issues that can occur for currently known microstrip circulators.
- the microstrip circulators can be formed by embedding a ferrite disc, such as an oxide ferrite disc made of YIG, directly into a dielectric substrate. The combination can then be co-fired together to form a more solid composite structure. Additionally circuitry, such as formed from silver or other metalized substances, can be added. Without the co-firing process, circuit metallization would not be able to be applied.
- Embodiments of this disclosure can alleviate some of the significant problems of the art.
- the saturation magnetization levels of the ferrite disc material can range between 1000-5000 (or about 1000-about 5000) gauss.
- the dielectric can be formed from dielectric powder or low temperature co-fired ceramic (LTCC) tape.
- the dielectric constant can be above 6, 10, 15, 20, 25, 30, 40, 50, or 60. In some embodiments, the dielectric constant can range from 6-30 (or about 6 to about 30). In some embodiments, the dielectric constant can be below about 60, 50, 40, 30, 25, 20, 15, or 10.
- a magnetic oxide disc 102 can be inserted into an aperture of a dielectric substrate 104 as shown in FIGS. 4 A-B .
- the disc 102 can be a cylindrical rod, though the particular shape is not limiting.
- the disc 102 can be green, previously fired, or not-previously fired.
- the substrate 104 can generally be a rectangular prism as shown in FIG. 4 A , but other shapes can be used as well such as the cylinder shown in FIG. 4 B . Embodiments of the substrate 104 are disclosed in more detail below.
- the components can be co-fired together, using such a method as discussed in U.S. Pat. No. 7,687,014, hereby incorporated by reference in its entirety and discussed below.
- This co-firing process can cause the substrate 104 to shrink around the disc 102 and hold it in place in conjunction with adhesives to form the composite structure 100 .
- This composite structure 100 can then be sliced to form the chip structure as shown in FIGS. 5 A-B ( FIG.
- FIG. 5 A showing the rectangular prism slice and FIG. 5 B showing the cylinder slice).
- slicing is not performed and the components are co-fired together at their final thickness.
- a plurality of different discs can be inserted into a single substrate in a plurality of different apertures.
- a magnetic oxide disk can be co-fired into a square or rectangular dielectric substrate, or any other shaped substrate, which can then serve as a platform for other components, such as circuitry.
- This composite structure can then be magnetized to serve as a microstrip circulator and/or isolator package, for example, or the ferrite disc could have been magnetized prior to insertion.
- the ferrite disc can be magnetized prior to the co-firing step.
- embodiments of the disclosure can form an integrated solution which can include a directional coupler and/or isolator in a package size which is not much larger than a standard isolator. Further, advantageously loss may not be affected by the level of magnetic field, or can at least be reduced. In some embodiments, the disclosed circulator will be no larger (and depending on the ferrite/dielectric combination chosen could be smaller) than all current ferrite microstrip circulators.
- a ferrite disc can be embedded into a dielectric tile, as shown in FIGS. 5 A-B .
- the thin ferrite disc shown in the figure can be significantly easier to magnetize uniformly than a square, or other oddly shaped piece, known in the art.
- the dielectric tile could be about 25 mm square though the particular dimensions are not limiting. This can be used in the 3-4 (or about 3-about 4) GHz region.
- a transformer can then be produced as shown in FIG. 6 .
- the substrate 104 has space left over for other component attachments.
- the transformer only a small magnet needs to be placed on the tile, as shown in FIG. 7 .
- assembly time can be much shorter than previously done.
- the dielectric tile in addition to using the dielectric tile as the substrate for the impedance transformer, it could also be used as the substrate for the coupler, switch, and termination. Thus, a number of other components can be added onto the substrate after co-firing, reducing the overall footprint of the device. Further, circuit metallization could be added, but only after the device has been co-fired.
- Embodiments of the disclosure can be particularly advantageous for a co-firing process with a magnetic material, such as for the formation of circulators/isolators.
- a magnetic material such as for the formation of circulators/isolators.
- they can be high dielectric magnetic materials with low firing temperatures (e.g., they can be fireable at a low temperature).
- a rod of magnetic material such as a nickel-zinc-ferrite material, magnesium ferrite, or other high saturation magnetization spinel ferrite and/or low firing magnetic garnet material with a high dielectric constant, such as a bismuth containing yttrium iron garnet derivative, can be inserted into an unfired ring formed from embodiments of the disclosed low temperature firing dielectric materials, such as shown in FIGS.
- the high dielectric constant magnetic garnet material can have a dielectric constant of between 24 and 35, such as 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, or 35, but the particular dielectric constant is not limiting.
- the ring can be any of the materials discussed below, such as scheelite, garnet, etc.
- the combination of the ring and the rod can then be co-fired together so that the ring shrinks around the rod.
- Both of these materials can be “fireable”, meaning they have the ability to be fired or sintered in an oven/kiln/other heating device, for example to a high density.
- firing can change one or more properties of the material, such as the ceramic materials discussed herein.
- the combination of ring and rod can be sliced/cut into individual components.
- Embodiments of these assemblies can be used as isolators and/or circulators for radiofrequency applications, such as for 5G applications.
- this co-firing process can be performed without the use of adhesives/epoxies/glues, or other organic (e.g., carbon-based) polymeric materials, and thus can be considered a “glueless assembly”.
- a “glue” is not needed to connect the rod to the ring.
- Previous iterations of the assembly fire the fireable ring separate from the fireable rod due to the temperature for firing the ring being too high, which can lead to melting, or at least considerably damaging the properties of the internal rod. Either both segments can be fired separately, or the ring can be fired first and then the ring/rod assembly is fired together. For each of these approaches, the ring will not sufficiently shrink around the rod and thus an adhesive will be needed to keep the ring and the rod attached to one another.
- the use of adhesives has a number of drawbacks, and advantageously the disclosed material can form a composite structure without the need for such adhesive as the rod and ring can be co-fired together.
- the glue is lossy, increasing the insertion loss of glued components.
- the dielectric loss of the glue at high frequencies is greater than the magnetic or the dielectric material.
- the material can have c′ of less than 10 (or less than about 10).
- c′ of less than 10 (or less than about 10).
- embodiments of the disclosure can be used for 5G below resonance applications. It can be advantageous to avoid moding and to offset the impedance effect of thinner substrates also used at high frequencies. Accordingly, values below 10 (or below about 10) are used for above 20 GHz frequencies.
- embodiments of the material as a ring can be suitable for co-firing with a rod material of high magnetization spinels (for example nickel zinc ferrites) such as disclosed in U.S. Pat. Pub. No. 2017/0098885, hereby incorporated by reference in its entirety, in particular for high frequency (5G) applications.
- the ring material can be co-fired with high dielectric constant materials such as disclosed in U.S. Pat. Pub. No. 2018/0016155, the entirety of which is hereby incorporated by reference in its entirety.
- the high dielectric constant magnetic rod can be a bismuth substituted high dielectric constant magnetic garnet. Standard bismuth doped high dielectric constant garnet materials such as Bi containing garnet materials described in numerous previous patent applications.
- the co-fireable ring material can be based on a scheelite structure or scheelite style material (e.g., a crystalline compound which contains a scheelite atomic arrangement).
- a scheelite structure or scheelite style material e.g., a crystalline compound which contains a scheelite atomic arrangement.
- This can include crystalline compounds which contain a scheelite atomic arrangement, and the term scheelite structure, scheelite, or scheelite style material can be used interchangeably.
- FIG. 8 illustrates dielectric constant regimes by material family for low firing ( ⁇ 800° C.) oxides.
- the scheelite material have the chemical formula BiVO 4 .
- the material having the scheelite structure can be Bi 1-2x-z R z M′ x V 1-x M′′ 2x O 4 where R is a rare earth element La, Ce, Pr, Sm, Nd, Gd, Dy, Tb, Ho, Er, Tm, Yb, Lu, Y or Sc, M′ is Li, Na, or K and M′′ is Mo or W. In some embodiments, 0 ⁇ z ⁇ 0.7 and 0 ⁇ x ⁇ 0.5.
- the scheelite material can have the chemical formula (Na,Li) 0.5x Bi 1-0.5x (Mo,W) x V 1-x O 4 . In some embodiments, 0 ⁇ x ⁇ 0.5.
- scheelites may have a low firing temperature ( ⁇ 850° C., ⁇ 900° C.) a low dielectric loss tangent ( ⁇ 0.001 at 3 GHz), and with suitable substitutions into the structure may exhibit a range of dielectric constants from 8 to 70 (or about 8 to about 70), between 10 and 60 (or about 10 to about 60), between 20 and 50 (or about 20 and about 50), or between 30 and 40 (or between about 30 and about 40).
- the scheelites may exhibit a dielectric constant of 8, 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, or 70 (or about 8, about 10, about 15, about 20, about 25, about 30, about 35, about 40, about 45, about 50, about 55, about 60, about 65, or about 70).
- the scheelite material in particular can be used as a low dielectric constant co-fireable material to fire with high dielectric constant materials, for example garnet and/or Bi doped materials, or any of the high magnetic rod materials discussed herein. It can be advantageous to use this material to avoid moding, and to offset the impedance effect of thinner substrates also necessary at high frequencies.
- the scheelite material can further be particularly useful for high frequency microstrip or surface integrated waveguide designs, for example due to the lowered temperature which allows for chemical compatibility and a wider range of dielectric constants.
- aluminum oxide such as Al 2 O 3
- the aluminum oxide can be added into the ring materials, such as the scheelite material, garnet material, spinel material, pyrochlore material, etc. discussed herein.
- the aluminum oxide can be blended into the ring material as aluminum oxide, such as by combining different powders.
- 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10 or about 1, about 2, about 3, about 4, about 5, about 6, about 7, about 8, about 9, or about 10) wt. % of aluminum oxide can be incorporated into the scheelite material.
- 1.2 (or about 1.2) wt. % of aluminum oxide can be incorporated into the scheelite material.
- greater than 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10 (or about 1, about 2, about 3, about 4, about 5, about 6, about 7, about 8, about 9, or about 10) wt. % of aluminum oxide can be incorporated into the scheelite material. In some embodiments, less than 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10 (or about 1, about 2, about 3, about 4, about 5, about 6, about 7, about 8, about 9, or about 10) wt. % of aluminum oxide can be incorporated into the scheelite material. In some embodiments, between 2 and 6 (or between about 2 and about 6) wt. % of aluminum oxide can be incorporated into the scheelite material. In some embodiments, 1-10 wt. % (or about 1 to about 10 wt.
- aluminum oxide can be added into the scheelite material.
- the incorporation of aluminum oxide can regulate thermal expansion behavior and prevent cracking. For example, it can allow the scheelite material to better match a thermal expansion material of a high dielectric, such as a bismuth rich high dielectric constant garnet, as compared to undoped scheelite material, thereby allowing for successful co-firing without cracking. Specifically, the cracking can be prevented by regulating thermal expansion.
- Table 1 illustrates a number of different scheelite materials and their properties.
- tungstates can have lower dielectric constants than corresponding molybdates, both of which can have a scheelite structure.
- the disclosed scheelite material can have a Q range of greater than 900, 1000, 1100, 1200, or 1300 (or greater than about 900, about 1000, about 1100, about 1200, or about 1300. In some embodiments, the disclosed scheelite material can have a Q range of less than 900, 1000, 1100, 1200, or 1300 (or less than about 900, 1000, 1100, 1200, or 1300.
- the disclosed scheelite material can have a dielectric constant of between 10 and 100 (or between about 10 and about 100). In some embodiments, the disclosed scheelite material can have a dielectric constant of greater than 10, 20, 30, 40, 50, 60, 70, 80, 90, or 100 (or greater than about 10, about 20, about 30, about 40, about 50, about 60, about 70, about 80, about 90, or about 100). In some embodiments, the disclosed scheelite material can have a dielectric constant of less than 20, 30, 40, 50, 60, 70, 80, 90, or 100 (or less than about 20, about 30, about 40, about 50, about 60, about 70, about 80, about 90, or about 100).
- the disclosed scheelite material can have a firing temperature of below 900, 850, 800, or 750° C. (or below about 900, about 850, about 800, or about 750° C.). In some embodiments, the disclosed scheelite material can have a firing temperature of greater than 900, 850, 800, or 750° C. (or greater than about 850, about 800, or about 750° C.). In some embodiments, the disclosed scheelite material can have a firing temperature of 775° C. (or about 775° C.).
- Table 2 illustrates experimental results of using a scheelite material. Further, Table 2 discloses potential device application for the scheelite materials.
- Table 3 illustrates particular scheelite based compositions which can be advantageously co-fired with TTHiE high dielectric materials.
- bismuth vanadate (BiVO 4 ) can be a particularly useful scheelite material.
- sodium or molybdenum can be added into the material.
- Table 4 illustrates other examples of materials having a scheelite structure which may be useful for co-firing.
- FIG. 9 illustrates an x-ray diffraction trace for BiVO 4 .
- FIG. 10 illustrates intensity graphs for Na 0.35 Bi 0.65 Mo 0.7 V 0.3 O 4 as calcined. Both figures indicate that the material has a scheelite structure and only a scheelite structure is present.
- FIG. 11 illustrates a dilatometry testing of scheelite materials.
- the TTHIE-1950 is a Bi—Ca—Zr—Y—Fe—O material. It can be advantageous for the mean alpha of the non-TTHIE materials to match as closely as possible to the mean alpha of the TTHiE material, such as U.S. Pat. Nos. 9,263,175 and 9,527,776, the entirety of each of which is hereby incorporated by reference in its entirety.
- FIG. 12 illustrates dilatometry testing of BiVO 4 with 1.2% Al 2 O 3 . As shown, the thermal expansion coefficient is a reasonable value to be co-fired with magnetic materials.
- the disclosed scheelite material can have a mean alpha within 1%, 5%, or 10% (or within about 1%, about 5%, or about 10%) of the TTHI material.
- the mean alpha can be in the range of 6-13 (or about 6-about 13) ppm/degree C., such as 6, 7, 8, 9, 10, 11, 12, or 13 (or about 6, about 7, about 8, about 9, about 10, about 11, about 12, or about 13) ppm/degree C.
- FIG. 13 illustrates the co-fire ideal cycle with garnet and dielectric factors.
- the ideal is that the OD of the pre-fired garnet rod is exactly (or about exactly) the same as the ID of the pressed dielectric tube at the end of the co-firing phase, but before cooling. Since the garnet has a fixed expansion, this is done by adjusting the shrinkage and initial size of the dielectric, thru control of green density. Diffusion occurs at the co-fire temperature after the garnet and dielectric are in contact, forming a bond; too much diffusion may cause dielectric loss. The garnet and dielectric remain in contact thru cooling, because their expansion (contraction) coefficients are the same, retaining the bond.
- ring materials can be used for co-firing instead of scheelites, with or without the aluminum oxide discussed above.
- spinels structures can be used as well. Table 5 illustrates potential spinel materials that can be used.
- FIG. 14 illustrates dilatometry results for Na 2 BiMg 2 V 3 O 12 .
- Another useful ring material can include pyrochlore materials, with or without the aluminum oxide discussed above.
- Table 7 illustrates potential pyrochlore materials which can be used.
- higher energy comminution can reduce the firing temperatures to around 850° C., or 850° C. or below by increasing the surface area of the powder making it more reactive.
- the pyrochlore materials can have a dielectric constant range of 60-100.
- Table 8 illustrates device applications for co-fire ferrite/dielectric combinations. It will be understood that the below table shows examples only, and the disclosure is not limited to the particular devices shown below.
- Embodiments of the disclosed composite microstrip circulators can be particularly advantageous for 5′ generation wireless system (5G) applications, though could also be used for early 4G and 3G applications as well.
- 5G technology is also referred to herein as 5G New Radio (NR).
- 5G networks can provide for significantly higher capacities than current 4G system, which allows for a larger number of consumers in an area. This can further improve uploading/downloading limits and requirements.
- the large number of circulators, such as those described herein, needed for 5G typically 1 per front end module or FEM
- the disclosed embodiments of circulators can allow for this integration and thus can be particularly advantageous.
- Other components in the front end module will be microstrip or SMT based.
- Preliminary specifications for 5G NR support a variety of features, such as communications over millimeter wave spectrum, beam forming capability, high spectral efficiency waveforms, low latency communications, multiple radio numerology, and/or non-orthogonal multiple access (NOMA).
- features such as communications over millimeter wave spectrum, beam forming capability, high spectral efficiency waveforms, low latency communications, multiple radio numerology, and/or non-orthogonal multiple access (NOMA).
- NOMA non-orthogonal multiple access
- teachings herein are applicable to a wide variety of communication systems, including, but not limited to, communication systems using advanced cellular technologies, such as LTE-Advanced, LTE-Advanced Pro, and/or 5G NR.
- advanced cellular technologies such as LTE-Advanced, LTE-Advanced Pro, and/or 5G NR.
- FIG. 15 is a schematic diagram of one example of a communication network 10 .
- the communication network 10 includes a macro cell base station 1 , a mobile device 2 , a small cell base station 3 , and a stationary wireless device 4 .
- the illustrated communication network 10 of FIG. 15 supports communications using a variety of technologies, including, for example, 4G LTE, 5G NR, and wireless local area network (WLAN), such as Wi-Fi. Although various examples of supported communication technologies are shown, the communication network 10 can be adapted to support a wide variety of communication technologies.
- 4G LTE Long Term Evolution
- 5G NR Fifth Generation NR
- WLAN wireless local area network
- the communication links can be duplexed in a wide variety of ways, including, for example, using frequency-division duplexing (FDD) and/or time-division duplexing (TDD).
- FDD frequency-division duplexing
- TDD time-division duplexing
- FDD is a type of radio frequency communications that uses different frequencies for transmitting and receiving signals.
- FDD can provide a number of advantages, such as high data rates and low latency.
- TDD is a type of radio frequency communications that uses about the same frequency for transmitting and receiving signals, and in which transmit and receive communications are switched in time.
- TDD can provide a number of advantages, such as efficient use of spectrum and variable allocation of throughput between transmit and receive directions.
- the mobile device 2 communicates with the macro cell base station 1 over a communication link that uses a combination of 4G LTE and 5G NR technologies.
- the mobile device 2 also communicates with the small cell base station 3 which can include embodiments of the disclosure.
- the mobile device 2 and small cell base station 3 communicate over a communication link that uses 5G NR, 4G LTE, and Wi-Fi technologies.
- the mobile device 2 communicates with the macro cell base station 2 and the small cell base station 3 using 5G NR technology over one or more frequency bands that are less than 6 Gigahertz (GHz). In one embodiment, the mobile device 2 supports a HPUE power class specification.
- the illustrated small cell base station 3 also communicates with a stationary wireless device 4 .
- the small cell base station 3 can be used, for example, to provide broadband service using 5G NR technology over one or more frequency bands above 6 GHz, including, for example, millimeter wave bands in the frequency range of 30 GHz to 300 GHz.
- the small cell base station 3 communicates with the stationary wireless device 4 using beamforming.
- beamforming can be used to focus signal strength to overcome path losses, such as high loss associated with communicating over millimeter wave frequencies.
- the communication network 10 of FIG. 15 includes the macro cell base station 1 , which can include embodiments of the disclosure, and the small cell base station 3 .
- the small cell base station 3 can operate with relatively lower power, shorter range, and/or with fewer concurrent users relative to the macro cell base station 1 .
- the small cell base station 3 can also be referred to as a femtocell, a picocell, or a microcell.
- the communication network 10 is illustrated as including two base stations, the communication network 10 can be implemented to include more or fewer base stations and/or base stations of other types.
- the communication network 10 of FIG. 15 is illustrated as including one mobile device and one stationary wireless device.
- the mobile device 2 and the stationary wireless device 4 illustrate two examples of user devices or user equipment (UE).
- UE user equipment
- the communication network 10 is illustrated as including two user devices, the communication network 10 can be used to communicate with more or fewer user devices and/or user devices of other types.
- user devices can include mobile phones, tablets, laptops, IoT devices, wearable electronics, and/or a wide variety of other communications devices.
- User devices of the communication network 10 can share available network resources (for instance, available frequency spectrum) in a wide variety of ways.
- Enhanced mobile broadband refers to technology for growing system capacity of LTE networks.
- eMBB can refer to communications with a peak data rate of at least 10 Gbps and a minimum of 100 Mbps for each user device.
- Ultra-reliable low latency communications refers to technology for communication with very low latency, for instance, less than 2 ms.
- uRLLC can be used for mission-critical communications such as for autonomous driving and/or remote surgery applications.
- Massive machine-type communications mMTC refers to low cost and low data rate communications associated with wireless connections to everyday objects, such as those associated with Internet of Things (IoT) applications.
- the communication network 10 of FIG. 15 can be used to support a wide variety of advanced communication features, including, but not limited to eMBB, uRLLC, and/or mMTC.
- a peak data rate of a communication link depends on a variety of factors. For example, peak data rate can be affected by channel bandwidth, modulation order, a number of component carriers, and/or a number of antennas used for communications.
- a data rate of a communication link can be about equal to M*Blog 2 (1+S/N), where M is the number of communication channels, B is the channel bandwidth, and S/N is the signal-to-noise ratio (SNR).
- data rate of a communication link can be increased by increasing the number of communication channels (for instance, transmitting and receiving using multiple antennas), using wider bandwidth (for instance, by aggregating carriers), and/or improving SNR (for instance, by increasing transmit power and/or improving receiver sensitivity).
- 5G NR communication systems can employ a wide variety of techniques for enhancing data rate and/or communication performance.
- FIG. 16 is a schematic diagram of one example of a communication link using carrier aggregation.
- Carrier aggregation can be used to widen bandwidth of the communication link by supporting communications over multiple frequency carriers, thereby increasing user data rates and enhancing network capacity by utilizing fragmented spectrum allocations.
- the communication link is provided between a base station 21 and a mobile device 22 .
- the communications link includes a downlink channel used for RF communications from the base station 21 to the mobile device 22 , and an uplink channel used for RF communications from the mobile device 22 to the base station 21 .
- FIG. 16 illustrates carrier aggregation in the context of FDD communications
- carrier aggregation can also be used for TDD communications.
- a communication link can provide asymmetrical data rates for a downlink channel and an uplink channel.
- a communication link can be used to support a relatively high downlink data rate to enable high speed streaming of multimedia content to a mobile device, while providing a relatively slower data rate for uploading data from the mobile device to the cloud.
- the base station 21 and the mobile device 22 communicate via carrier aggregation, which can be used to selectively increase bandwidth of the communication link.
- Carrier aggregation includes contiguous aggregation, in which contiguous carriers within the same operating frequency band are aggregated.
- Carrier aggregation can also be non-contiguous, and can include carriers separated in frequency within a common band or in different bands.
- the uplink channel includes three aggregated component carriers f uL1 , f uL2 , and f uL3 . Additionally, the downlink channel includes five aggregated component carriers f DL1 , f DL2 , f DL3 , f DL4 , and f DL5 . Although one example of component carrier aggregation is shown, more or fewer carriers can be aggregated for uplink and/or downlink. Moreover, a number of aggregated carriers can be varied over time to achieve desired uplink and downlink data rates.
- a number of aggregated carriers for uplink and/or downlink communications with respect to a particular mobile device can change over time.
- the number of aggregated carriers can change as the device moves through the communication network and/or as network usage changes over time.
- the individual component carriers used in carrier aggregation can be of a variety of frequencies, including, for example, frequency carriers in the same band or in multiple bands. Additionally, carrier aggregation is applicable to implementations in which the individual component carriers are of about the same bandwidth as well as to implementations in which the individual component carriers have different bandwidths.
- FIG. 17 A is a schematic diagram of one example of a downlink channel using multi-input and multi-output (MIMO) communications.
- FIG. 17 B is schematic diagram of one example of an uplink channel using MIMO communications.
- MIMO multi-input and multi-output
- MIMO communications use multiple antennas for simultaneously communicating multiple data streams over common frequency spectrum.
- the data streams operate with different reference signals to enhance data reception at the receiver.
- MIMO communications benefit from higher SNR, improved coding, and/or reduced signal interference due to spatial multiplexing differences of the radio environment.
- MIMO order refers to a number of separate data streams sent or received.
- MIMO order for downlink communications can be described by a number of transmit antennas of a base station and a number of receive antennas for UE, such as a mobile device.
- two-by-two (2 ⁇ 2) DL MIMO refers to MIMO downlink communications using two base station antennas and two UE antennas.
- four-by-four (4 ⁇ 4) DL MIMO refers to MIMO downlink communications using four base station antennas and four UE antennas.
- downlink MIMO communications are provided by transmitting using M antennas 43 a , 43 b , 43 c , . . . 43 m of the base station 41 and receiving using N antennas 44 a , 44 b , 44 c , . . . 44 n of the mobile device 42 .
- FIG. 17 A illustrates an example of M ⁇ N DL MIMO.
- MIMO order for uplink communications can be described by a number of transmit antennas of UE, such as a mobile device, and a number of receive antennas of a base station.
- 2 ⁇ 2 UL MIMO refers to MIMO uplink communications using two UE antennas and two base station antennas.
- 4 ⁇ 4 UL MIMO refers to MIMO uplink communications using four UE antennas and four base station antennas.
- uplink MIMO communications are provided by transmitting using N antennas 44 a , 44 b , 44 c , . . . 44 n of the mobile device 42 and receiving using M antennas 43 a , 43 b , 43 c , . . . 43 m of the base station 41 .
- FIG. 17 B illustrates an example of N ⁇ M UL MIMO.
- bandwidth of an uplink channel and/or a downlink channel can be increased.
- MIMO communications are also applicable communication links using TDD.
- one form of base station will be massive multiple input, multiple output (MIMO) based, with an array of perhaps 64-128 antennas capable of multi-beam forming to interact with handheld terminals at very high data rates.
- MIMO massive multiple input, multiple output
- embodiments of the disclosure can be incorporated into the base stations to provide for high capacity applications.
- FIG. 18 shows a simplified version of an RF transmission system, omitting drivers and switching logic.
- the system can include a number of different components, including a circulator.
- embodiments of the disclosure can be used as the circulator in the RF system, either for newly created systems or as improved replacements for the previous systems.
- embodiments of the disclosure relate to hybrid solutions using a stripline circulator, and microstrip or stripline topology for the remaining components.
- FIG. 19 illustrates the integrated component of FIGS. 5 A-B discussed above onto the simplified RF antenna structure.
- the substrate can include the co-fired ferrite/dielectric tile for the circulator.
- a coupler, switch, and load can also be applied to the dielectric tile outside of the ferrite.
- the conductors and the ground plane could be in a thick film silver.
- the circulator subassembly can also be integrated with the power amplifier (PA) and loud noise amplifier (LNA) modules.
- PA power amplifier
- LNA loud noise amplifier
- Embodiments of the disclosure can have advantages over circulators known in the art. For example,
- embodiments of the ceramic circulator can have the following advantages:
- soft substrate e.g., softboards
- softboards can have the following disadvantages:
- embodiments of the disclosure can have significant advantages over circulators previously known in the art.
- FIG. 20 illustrates another embodiment of a MIMO system that the disclosed microstrip circulators can be incorporated into.
- the current antennas will be replaced with antenna arrays with, for example, 64 array elements. Each element can be fed by a separate front end module (FEM).
- FEM front end module
- FIG. 21 is a schematic diagram of one example of a mobile device 800 .
- the mobile device 800 includes a baseband system 801 , a transceiver 802 , a front end system 803 , antennas 804 , a power management system 805 , a memory 806 , a user interface 807 , and a battery 808 and can interact with the base stations including embodiments of the microstrip circulators disclosed herein.
- the mobile device 800 can be used communicate using a wide variety of communications technologies, including, but not limited to, 2G, 3G, 4G (including LTE, LTE-Advanced, and LTE-Advanced Pro), 5G NR, WLAN (for instance, Wi-Fi), WPAN (for instance, Bluetooth and ZigBee), and/or GPS technologies.
- 2G, 3G, 4G including LTE, LTE-Advanced, and LTE-Advanced Pro
- 5G NR for instance, Wi-Fi
- WPAN for instance, Bluetooth and ZigBee
- GPS technologies including, but not limited to, 2G, 3G, 4G (including LTE, LTE-Advanced, and LTE-Advanced Pro), 5G NR, WLAN (for instance, Wi-Fi), WPAN (for instance, Bluetooth and ZigBee), and/or GPS technologies.
- the transceiver 802 generates RF signals for transmission and processes incoming RF signals received from the antennas 804 . It will be understood that various functionalities associated with the transmission and receiving of RF signals can be achieved by one or more components that are collectively represented in FIG. 21 as the transceiver 802 . In one example, separate components (for instance, separate circuits or dies) can be provided for handling certain types of RF signals.
- the mobile device 800 supports carrier aggregation, thereby providing flexibility to increase peak data rates.
- Carrier aggregation can be used for both Frequency Division Duplexing (FDD) and Time Division Duplexing (TDD), and may be used to aggregate a plurality of carriers or channels.
- Carrier aggregation includes contiguous aggregation, in which contiguous carriers within the same operating frequency band are aggregated.
- Carrier aggregation can also be non-contiguous, and can include carriers separated in frequency within a common band or in different bands.
- the antennas 804 can include antennas used for a wide variety of types of communications.
- the antennas 804 can include antennas associated transmitting and/or receiving signals associated with a wide variety of frequencies and communications standards.
- the antennas 804 support MIMO communications and/or switched diversity communications.
- MIMO communications use multiple antennas for communicating multiple data streams over a single radio frequency channel.
- MIMO communications benefit from higher signal to noise ratio, improved coding, and/or reduced signal interference due to spatial multiplexing differences of the radio environment.
- Switched diversity refers to communications in which a particular antenna is selected for operation at a particular time. For example, a switch can be used to select a particular antenna from a group of antennas based on a variety of factors, such as an observed bit error rate and/or a signal strength indicator.
- FIG. 22 is a schematic diagram of a power amplifier system 840 according to one embodiment.
- the illustrated power amplifier system 840 includes a baseband processor 821 , a transmitter 822 , a power amplifier (PA) 823 , a directional coupler 824 , a bandpass filter 825 , an antenna 826 , a PA bias control circuit 827 , and a PA supply control circuit 828 .
- the illustrated transmitter 822 includes an I/Q modulator 837 , a mixer 838 , and an analog-to-digital converter (ADC) 839 .
- the transmitter 822 is included in a transceiver such that both transmit and receive functionality is provided.
- Embodiments of the disclosed microstrip circulators can be incorporated into the power amplifier system.
- FIG. 23 discloses an embodiment of a process 300 that can be used.
- a ferrite disc or cylinder can be formed from a magnetic ceramic material by any suitable conventional process known in the art for making such elements, i.e., magnetic oxides of the types used in high frequency electronic components.
- a substrate can be formed from a dielectric material by any suitable conventional process.
- the ferrite disc can be sintered by firing it in a kiln.
- the disc can be combined into the dielectric substrate with the aperture.
- the outside surface of the disc can be machined to ensure it is of an outside diameter (OD) that is less than the inside diameter (ID) of the substrate aperture.
- the OD is slightly smaller than the ID to enable the disc to be inserted into the substrate.
- the pre-fired disc can be received in an unfired or “green” substrate to form the composite assembly 100 shown in FIGS. 4 A-B .
- the disc and substrate can be co-fired. That is, composite assembly 100 is fired.
- the co-firing temperature can be lower than the temperature at which disc was fired, to ensure that the physical and electrical properties of the disc remain unchanged.
- the co-firing temperature can be within the well-known range in which such components are conventionally fired.
- co-firing causes the substrate to shrink around the disc, thereby securing them together.
- the outside surface of the composite assembly 100 can then be machined to ensure it is of a specified or otherwise predetermined OD. Further, this step can be used to metalize and/or magnetize the composite assembly 100 if the ferrite disc has not previously been magnetized.
- Steps 310 and 312 show optional steps that can be taken after the co-firing of the composite assembly 100 .
- additional components can be added 310 onto the substrate, such as circuitry, to form final electronic components.
- the composite assembly 100 can be sliced 312 , or otherwise partitioned, to form a number of discrete assemblies. In some embodiments, both these optional steps can be performed and the particular order is not limiting. In some embodiments, only one of the optional steps can be taken. In some embodiments, neither of the optional steps can be taken.
- composite assemblies 100 can be used in manufacturing high frequency electronic components in the same manner as conventionally-produced assemblies of this type.
- the method of the present invention is more economical than conventional methods, as the invention does not involve the use of adhesives.
- FIG. 24 illustrates an example embodiment of a circulator as discussed herein.
- Thick film silver can be printed as the circuit.
- the circulator includes Port 1, Port 2, and Port 3. One of these ports can be blocked off to form an isolator.
- Circuits and devices having one or more features as described herein can be implemented in RF applications such as a wireless base-station.
- a wireless base-station can include one or more antennas configured to facilitate transmission and/or reception of RF signals.
- Such antenna(s) can be coupled to circuits and devices having one or more circulators/isolators as described herein.
- the above-disclosed material can be incorporated into different components of a telecommunication base station, such as used for cellular networks and wireless communications.
- An example perspective view of a base station 2000 is shown in FIG. 25 , including both a cell tower 2002 and electronics building 2004 .
- the cell tower 2002 can include a number of antennas 2006 , typically facing different directions for optimizing service, which can be used to both receive and transmit cellular signals while the electronics building 2004 can hold electronic components such as filters, amplifiers, etc. discussed below. Both the antennas 2006 and electronic components can incorporate embodiments of the disclosed ceramic materials.
- FIG. 25 shows a base station.
- the base station can include an antenna that is configured to facilitate transmission and/or reception of RF signals.
- Such signals can be generated by and/or processed by a transceiver.
- the transceiver can generate a transmit signal that is amplified by a power amplifier (PA) and filtered (Tx Filter) for transmission by the antenna.
- PA power amplifier
- Tx Filter filtered
- LNA low-noise amplifier
- circulators and/or isolators having one or more features as described herein can be implemented at or in connection with, for example, the PA circuit and the LNA circuit.
- the circulators and isolators can include embodiments of the material disclosed herein.
- the antennas can include the materials disclosed herein, allowing them to work on higher frequency ranges.
- FIG. 26 illustrates hardware 2010 that can be used in the electronics building 2004 , and can include the components discussed above with respect to FIG. 25 .
- the hardware 2010 can be a base station subsystem (BSS), which can handle traffic and signaling for the mobile systems.
- BSS base station subsystem
- FIG. 27 illustrates a further detailing of the hardware 2010 discussed above. Specifically, FIG. 27 depicts a cavity filter/combiner 2020 which can be incorporated into the base station.
- the cavity filter 2020 can include, for example, bandpass filters such as those incorporating embodiments of the disclosed material, and can allow the output of two or more transmitters on different frequencies to be combined.
- FIG. 28 illustrates a circuit board 30004 which can include an isolator/circulator/filter 3002 and can be incorporated into the base station discussed above.
- the above recited ranges can be specific ranges, and not within a particular % of the value. For example, within less than or equal to 10 wt./vol. % of, within less than or equal to 5 wt./vol. % of, within less than or equal to 1 wt./vol. % of, within less than or equal to 0.1 wt./vol. % of, and within less than or equal to 0.01 wt./vol. % of the stated amount.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Soft Magnetic Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
- This application is a continuation of U.S. application Ser. No. 16/440,221, which, filed Jun. 13, 2019, which claims priority to U.S. App. No. 62/686,191, filed Jun. 18, 2018, the entireties of each of which are incorporated by reference herein.
- Embodiments of the disclosure relate to co-fireable dielectric materials that can be formed without the use of adhesives.
- Circulators and isolators are passive electronic devices that are used in high-frequency (e.g., microwave) radio frequency systems to permit a signal to pass in one direction while providing high isolation to reflected energy in the reverse direction. Circulators and isolators commonly include a disc-shaped assembly comprising a disc-shaped ferrite or other ferromagnetic ceramic element, disposed concentrically within an annular dielectric element.
- A conventional process for making the above-referenced composite disc assemblies is illustrated by the flow diagram of
FIG. 1 . Atstep 12, a cylinder is formed from a dielectric ceramic material. Atstep 14, the (unfired or “green”) cylinder is then fired in a kiln (commonly referred to simply as “firing”). Thus, the ceramic material is “fireable”. Atstep 16, the outside surface of the cylinder is then machined to ensure its outside diameter (OD) is of a selected dimension. Achieving precise dimensions in the assembly elements is important because the dimensions affect microwave waveguide characteristics. Atstep 18, the inside surface of the cylinder is similarly machined to ensure its inside diameter (ID) is of a selected dimension. In addition, atstep 20, a rod is formed from a magnetic ceramic material. Atstep 22, the rod is then fired, and atstep 24 its surface is machined to a selected OD. The rod OD is slightly less than the cylinder OD so that the rod can be fitted securely within the cylinder, as described below. Achieving a close fit that promotes good adhesion between the rod and cylinder is a reason that both the outside surface of the rod and the inside surface of the cylinder are machined to precise tolerances. - At
step 26, epoxy adhesive is applied to the one or both of the rod and cylinder. Atstep 28, the rod is inserted inside the cylinder to form a rod-and-cylinder assembly, and the epoxy is allowed to cure (harden), as indicated bystep 30. Atstep 32, the outside surface of the rod-and-cylinder assembly is again machined to a precise OD. Lastly, atstep 34, the rod-and-cylinder assembly is sliced into a number of disc assemblies. Each disc assembly thus comprises a magnetic ceramic disc disposed concentrically within a dielectric ceramic ring. Each disc assembly is typically several millimeters in thickness. - The time involved in machining the inside surface of the cylinder to promote adhesion, applying epoxy to the parts, carefully handling and assembling the epoxy-laden parts, and curing the epoxy, contributes to inefficiency in the process. It would be desirable to provide a more efficient method for making composite magnetic-dielectric disc assemblies.
- Disclosed herein are embodiments of a composite material for use as a radiofrequency component comprising a magnetic garnet material rod, and a ring surrounding the magnetic garnet material rod, the ring being formed from a scheelite material having a firing temperature of 950° C. or below.
- In some embodiments, the scheelite material can have the chemical formula Li0.05Bi0.95Mo0.1V0.9O4. In some embodiments, the scheelite material can have the chemical formula Bi1-2x-zRzM′xV1-xM″xO4, R being a rare earth element La, Ce, Pr, Sm, Nd, Gd, Dy, Tb, Ho, Er, Tm, Yb, Lu, Y or Sc, M′ being Li, Na, or K, and M″ being Mo or W. In some embodiments, the scheelite material can have the chemical formula (Na,Li)0.5xBi1-0.5x(Mo,W)xV1-xO4, x being between 0 and 0.5. In some embodiments, the scheelite material can include between 1 and 10 wt. % aluminum oxide. In some embodiments, the scheelite material can include between 2 and 6 wt. % aluminum oxide. In some embodiments, the magnetic garnet material rod can include Bi, Ca, Zr, Y, Fe, and O. In some embodiments, the scheelite material can include BiVO4. In some embodiments, the ring can reduce in diameter around the magnetic garnet material rod during firing so that no adhesive is used to connect the ring with the magnetic garnet material rod. In some embodiments, the scheelite material can include (Na0.35Bi0.65)(Mo0.7V0.3)O4. In some embodiments, the scheelite material can include (Na0.2Bi0.8)(Mo0.4V0.6)O4.
- Also disclosed herein are embodiments of a method of forming a composite material for use as an isolator or circulator in a radiofrequency device, the method comprising providing a magnetic garnet material rod, providing an outer ring having a scheelite crystalline structure, the outer ring having a firing temperature of 950° C. or below, entering the magnetic garnet material rod within an aperture in the outer ring, and co-firing the outer ring and the magnetic garnet material rod together at a temperature of 950° C. or below to shrink the outer ring around an outer surface of the magnetic garnet material rod without the use of adhesive or glue and form a composite material.
- In some embodiments, the outer ring can have the chemical formula Li0.05Bi0.95Mo0.1V0.9O4.
- In some embodiments, the scheelite material can have the chemical formula Bi1-2x-zRzM′xV1-xM″xO4, R being a rare earth element La, Ce, Pr, Sm, Nd, Gd, Dy, Tb, Ho, Er, Tm, Yb, Lu, Y or Sc, M′ being Li, Na, or K, and M″ being Mo or W. In some embodiments, the scheelite material can have the chemical formula (Na,Li)0.5xBi1-0.5x(Mo,W)xV1-xO4, x being between 0 and 0.5. In some embodiments, the scheelite material can include between 1 and 10 wt. % aluminum oxide. In some embodiments, the scheelite material can include between 2 and 6 wt. % aluminum oxide. In some embodiments, the magnetic garnet material rod can include Bi, Ca, Zr, Y, Fe, and O. In some embodiments, the scheelite material can include BiVO4. In some embodiments, the method can further include slicing the composite material.
- Also disclosed herein are embodiments of a radiofrequency isolator or circulator comprising a magnetic garnet material rod, and a ring surrounding the magnetic garnet material rod, the ring being formed from a scheelite material having a firing temperature of 950° C. or below. In some embodiments, the ring can reduce in diameter around the magnetic garnet material rod during firing so that no adhesive is used to connect the ring with the magnetic garnet material rod.
-
FIG. 1 illustrates a flow diagram of a method for fabricating composite magnetic-dielectric disc assemblies in accordance with the prior art. -
FIG. 2 schematically shows how materials having one or more features described herein can be designed, fabricated, and used. -
FIG. 3 illustrates a magnetic field v. loss chart. -
FIGS. 4A-B illustrate an embodiment of a composite structure having a ferrite cylinder within a rectangular prism or cylindrical substrate. -
FIGS. 5A-B illustrate an embodiment of a composite tile with a square or circle shape. -
FIG. 6 illustrates an integrated microstrip circulator without a magnet. -
FIG. 7 illustrates an integrated microstrip circulator with a magnet. -
FIG. 8 illustrates example dielectric constant regimes for certain materials. -
FIG. 9 illustrates intensity graphs for BiVO4. -
FIG. 10 illustrates intensity graphs for Na0.35Bi0.65Mo0.7V0.3O4 as calcined. -
FIG. 11 illustrates dilatometry testing of scheelite materials. -
FIG. 12 illustrates dilatometry testing of BiVO4 with 1.2% Al2O3. -
FIG. 13 illustrates an example of a co-firing cycle. -
FIG. 14 illustrates dilatometry results for Na2BiMg2V3O12. -
FIG. 15 is a schematic diagram of one example of a communication network. -
FIG. 16 is a schematic diagram of one example of a communication link using carrier aggregation. -
FIG. 17A is a schematic diagram of one example of a downlink channel using multi-input and multi-output (MIMO) communications. -
FIG. 17B is schematic diagram of one example of an uplink channel using MIMO communications. -
FIG. 18 illustrates a schematic of an antenna system. -
FIG. 19 illustrates a schematic of an antenna system with an embodiment of an integrated microstrip circulator. -
FIG. 20 illustrates a MIMO system incorporating embodiments of the disclosure. -
FIG. 21 is a schematic diagram of one example of a mobile device. -
FIG. 22 is a schematic diagram of a power amplifier system according to one embodiment. -
FIG. 23 illustrates a method of forming a composite integrated microstrip circulator. -
FIG. 24 illustrates an embodiment of an integrated microstrip circulator for testing. -
FIG. 25 illustrates a perspective view of a cellular antenna base station incorporating embodiments of the disclosure. -
FIG. 26 illustrates housing components of a base station incorporating embodiments of the disclosed material. -
FIG. 27 illustrates a cavity filter used in a base station incorporating embodiments of the material disclosed herein. -
FIG. 28 illustrates an embodiment of a circuit board including embodiments of the material disclosed herein. - Disclosed herein are embodiments of low firing dielectric materials. These materials can be advantageously co-fired with high dielectric materials to form composites for magnetic-dielectric assemblies, such as for isolator and circulator applications. These assemblies can be then incorporated into radiofrequency applications. Advantageously, embodiments of the disclosed materials can be co-fired without needing any adhesives, such as glue, epoxy or other chemical adhesives. Thus, composites formed out of embodiments of the disclosure can be glue free, epoxy free, or adhesive free.
- Embodiments of the disclosure could advantageously allow for 5G systems, in particular operating at 3 GHz and above, to form integrated architectures which can include different components, such as antennas, circulators, amplifiers, and/or semiconductor based amplifiers. By allowing for the integration of these components onto a single substrate, this can improve the overall miniaturization of the device. In some embodiments, the disclosed devices can be operable at frequencies between about 1.8 GHz and about 30 GHz. In some embodiments, the disclosed device can be operable at frequencies of greater than about 1, 2, 3, 4, 5, 10, 15, 20, or 25 GHz. In some embodiments, the disclosed device can be operable at frequencies of less than 30, 25, 20, 15, 10, 5, 4, 3, or 2 GHz.
- In some embodiments, the integrated architecture can include a directional coupler and/or isolator in a package size which is not much larger than a standard isolator. In some embodiments, the integrated architecture can include a high power switch. In addition to using the dielectric tile as the substrate for the impedance transformer, it could also be used as the substrate for the coupler, switch and termination
-
FIG. 2 schematically shows how one or more chemical elements (block 1), chemical compounds (block 2), chemical substances (block 3) and/or chemical mixtures (block 4) can be processed to yield one or more materials (block 5) having one or more features described herein. In some embodiments, such materials can be formed into ceramic materials (block 6) configured to include a desirable dielectric property (block 7), a magnetic property (block 8). - In some embodiments, a material having one or more of the foregoing properties can be implemented in applications (block 10) such as radio-frequency (RF) application. Such applications can include implementations of one or more features as described herein in
devices 12. In some applications, such devices can further be implemented inproducts 11. Examples of such devices and/or products are described herein. - Circulators are passive multiport devices which can receive and transmit different signals, such as microwave or radiofrequency (RF). These ports can be an external waveguide or transmission line which connects to and from the circulator. Isolators are similar to circulators, but one or more of the ports can be blocked off. Hence, circulator and isolator can be used interchangeably herein as they can be similar in general structural. Thus, all discussion below can apply both to circulators and isolators.
- Microstrip circulators and isolators are devices known in the art consist of a thin film circuit deposited over a substrate, such as a dielectric ferrite substrate. In some embodiments, one or more ferrite discs can be adhered onto the substrate. Magnet(s) can then be further attached to circulate a signal through the ferrite disc.
- Further, all-ferrite microstrip circulators have been used as well, in particular for radar T/R modules. Circuitry can be printed onto the all ferrite microstrip circulator and a magnet can be added on top to direct the signal. For example, a metallization pattern is formed onto a ferrite substrate. Typically, the metallization pattern consists of a central disc and multiple transmission lines.
- Circulators generally can operate in either of the above or below resonance operating regions. This is shown in
FIG. 3 . In some embodiments, above-resonance frequencies can be advantageous for narrow band, sub 4 GHz circulators. For higher frequencies, the below resonance region can be more advantageous. - Microstrip circulators in particular typically work in the below resonance operating region. They use a very small magnet or can be self-biased, such as in the case of hexagonal ferrites. However, square tiles can be a difficult shape to magnetize uniformly, in particular for the all-ferrite microstrip circulators known in the art. Thus, they will operate close to the low field loss region. When transformers are mounted on the lossy unmagnetized ferrite, performance suffers. Further, increased power will make the poor performance even more known. Thus, circulators known in the art suffer from issues due to the ferrite tile being poorly magnetized, leading to poor insertion loss and intermodulation distortion (IMD), and power performance.
- Embodiments of the disclosure can improve overall magnetization and reduce performance issues that can occur for currently known microstrip circulators. Generally, the microstrip circulators can be formed by embedding a ferrite disc, such as an oxide ferrite disc made of YIG, directly into a dielectric substrate. The combination can then be co-fired together to form a more solid composite structure. Additionally circuitry, such as formed from silver or other metalized substances, can be added. Without the co-firing process, circuit metallization would not be able to be applied. Embodiments of this disclosure can alleviate some of the significant problems of the art.
- Any number of different ferrite disc materials that can be used. In some embodiments, the saturation magnetization levels of the ferrite disc material can range between 1000-5000 (or about 1000-about 5000) gauss.
- Further, any number of different dielectric substrates known in the art can be used. The dielectric can be formed from dielectric powder or low temperature co-fired ceramic (LTCC) tape. In some embodiments, the dielectric constant can be above 6, 10, 15, 20, 25, 30, 40, 50, or 60. In some embodiments, the dielectric constant can range from 6-30 (or about 6 to about 30). In some embodiments, the dielectric constant can be below about 60, 50, 40, 30, 25, 20, 15, or 10.
- In particular, to form the
composite microstrip circulator 100, amagnetic oxide disc 102, or other magnetic disc, can be inserted into an aperture of adielectric substrate 104 as shown inFIGS. 4A-B . In some embodiments, thedisc 102 can be a cylindrical rod, though the particular shape is not limiting. Thedisc 102 can be green, previously fired, or not-previously fired. - Further, the
substrate 104 can generally be a rectangular prism as shown inFIG. 4A , but other shapes can be used as well such as the cylinder shown inFIG. 4B . Embodiments of thesubstrate 104 are disclosed in more detail below. Once thedisc 102 is inside thesubstrate 104, the components can be co-fired together, using such a method as discussed in U.S. Pat. No. 7,687,014, hereby incorporated by reference in its entirety and discussed below. This co-firing process, further detailed below, can cause thesubstrate 104 to shrink around thedisc 102 and hold it in place in conjunction with adhesives to form thecomposite structure 100. Thiscomposite structure 100 can then be sliced to form the chip structure as shown inFIGS. 5A-B (FIG. 5A showing the rectangular prism slice andFIG. 5B showing the cylinder slice). However, in some embodiments, slicing is not performed and the components are co-fired together at their final thickness. In some embodiments, a plurality of different discs can be inserted into a single substrate in a plurality of different apertures. - Thus, in some embodiments a magnetic oxide disk can be co-fired into a square or rectangular dielectric substrate, or any other shaped substrate, which can then serve as a platform for other components, such as circuitry. This composite structure can then be magnetized to serve as a microstrip circulator and/or isolator package, for example, or the ferrite disc could have been magnetized prior to insertion. In some embodiments, the ferrite disc can be magnetized prior to the co-firing step.
- Once the composite structure is formed, other components can be added onto the substrate, such as additional thin film circuits and the like. Thus, embodiments of the disclosure can form an integrated solution which can include a directional coupler and/or isolator in a package size which is not much larger than a standard isolator. Further, advantageously loss may not be affected by the level of magnetic field, or can at least be reduced. In some embodiments, the disclosed circulator will be no larger (and depending on the ferrite/dielectric combination chosen could be smaller) than all current ferrite microstrip circulators.
- Thus, using a co-firing process, a ferrite disc can be embedded into a dielectric tile, as shown in
FIGS. 5A-B . The thin ferrite disc shown in the figure can be significantly easier to magnetize uniformly than a square, or other oddly shaped piece, known in the art. In some embodiments, the dielectric tile could be about 25 mm square though the particular dimensions are not limiting. This can be used in the 3-4 (or about 3-about 4) GHz region. - Using the dielectric tile, a transformer can then be produced as shown in
FIG. 6 . As shown, thesubstrate 104 has space left over for other component attachments. After forming the transformer, only a small magnet needs to be placed on the tile, as shown inFIG. 7 . Thus, assembly time can be much shorter than previously done. - In addition to using the dielectric tile as the substrate for the impedance transformer, it could also be used as the substrate for the coupler, switch, and termination. Thus, a number of other components can be added onto the substrate after co-firing, reducing the overall footprint of the device. Further, circuit metallization could be added, but only after the device has been co-fired.
- Embodiments of the disclosure can be particularly advantageous for a co-firing process with a magnetic material, such as for the formation of circulators/isolators. In particular, they can be high dielectric magnetic materials with low firing temperatures (e.g., they can be fireable at a low temperature). Specifically, a rod of magnetic material, such as a nickel-zinc-ferrite material, magnesium ferrite, or other high saturation magnetization spinel ferrite and/or low firing magnetic garnet material with a high dielectric constant, such as a bismuth containing yttrium iron garnet derivative, can be inserted into an unfired ring formed from embodiments of the disclosed low temperature firing dielectric materials, such as shown in
FIGS. 4A-B above (104 being the ring and 102 being the rod). The high dielectric constant magnetic garnet material can have a dielectric constant of between 24 and 35, such as 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, or 35, but the particular dielectric constant is not limiting. The ring can be any of the materials discussed below, such as scheelite, garnet, etc. - The combination of the ring and the rod can then be co-fired together so that the ring shrinks around the rod. Both of these materials can be “fireable”, meaning they have the ability to be fired or sintered in an oven/kiln/other heating device, for example to a high density. In some embodiments, firing can change one or more properties of the material, such as the ceramic materials discussed herein. After firing, the combination of ring and rod can be sliced/cut into individual components. Embodiments of these assemblies can be used as isolators and/or circulators for radiofrequency applications, such as for 5G applications.
- Advantageously, this co-firing process can be performed without the use of adhesives/epoxies/glues, or other organic (e.g., carbon-based) polymeric materials, and thus can be considered a “glueless assembly”. For example, a “glue” is not needed to connect the rod to the ring. Previous iterations of the assembly fire the fireable ring separate from the fireable rod due to the temperature for firing the ring being too high, which can lead to melting, or at least considerably damaging the properties of the internal rod. Either both segments can be fired separately, or the ring can be fired first and then the ring/rod assembly is fired together. For each of these approaches, the ring will not sufficiently shrink around the rod and thus an adhesive will be needed to keep the ring and the rod attached to one another.
- However, the use of adhesives has a number of drawbacks, and advantageously the disclosed material can form a composite structure without the need for such adhesive as the rod and ring can be co-fired together. For example, it is extremely difficult, if not impossible, to metallize the assembly once there is adhesive. This is because the temperature required for metallization is much higher than the use temperature for the adhesive, causing the adhesive to melt and/or lose adhesive.
- Further, the glue is lossy, increasing the insertion loss of glued components. The dielectric loss of the glue at high frequencies is greater than the magnetic or the dielectric material.
- In some embodiments, the material can have c′ of less than 10 (or less than about 10). Thus, embodiments of the disclosure can be used for 5G below resonance applications. It can be advantageous to avoid moding and to offset the impedance effect of thinner substrates also used at high frequencies. Accordingly, values below 10 (or below about 10) are used for above 20 GHz frequencies.
- As an example, embodiments of the material as a ring can be suitable for co-firing with a rod material of high magnetization spinels (for example nickel zinc ferrites) such as disclosed in U.S. Pat. Pub. No. 2017/0098885, hereby incorporated by reference in its entirety, in particular for high frequency (5G) applications. Additionally, the ring material can be co-fired with high dielectric constant materials such as disclosed in U.S. Pat. Pub. No. 2018/0016155, the entirety of which is hereby incorporated by reference in its entirety. The high dielectric constant magnetic rod can be a bismuth substituted high dielectric constant magnetic garnet. Standard bismuth doped high dielectric constant garnet materials such as Bi containing garnet materials described in numerous previous patent applications. Y—Bi—Ca—Zr—V—Fe—O sinters around 950° C. Thus, disclosed herein are ways to lower the firing temperature of scheelite material so that it can be co-fired with the nickel zinc ferrite at an appropriate temperature range.
- As mentioned, the co-fireable ring material can be based on a scheelite structure or scheelite style material (e.g., a crystalline compound which contains a scheelite atomic arrangement). This can include crystalline compounds which contain a scheelite atomic arrangement, and the term scheelite structure, scheelite, or scheelite style material can be used interchangeably.
FIG. 8 illustrates dielectric constant regimes by material family for low firing (<800° C.) oxides. In some embodiments, the scheelite material have the chemical formula BiVO4. - In some embodiments, the material having the scheelite structure can be Bi1-2x-zRzM′xV1-xM″2xO4 where R is a rare earth element La, Ce, Pr, Sm, Nd, Gd, Dy, Tb, Ho, Er, Tm, Yb, Lu, Y or Sc, M′ is Li, Na, or K and M″ is Mo or W. In some embodiments, 0<z<0.7 and 0<x<0.5.
- In some embodiments, the scheelite material can have the chemical formula (Na,Li)0.5xBi1-0.5x(Mo,W)xV1-xO4. In some embodiments, 0<x<0.5.
- In some embodiments, scheelites may have a low firing temperature (<850° C., <900° C.) a low dielectric loss tangent (<0.001 at 3 GHz), and with suitable substitutions into the structure may exhibit a range of dielectric constants from 8 to 70 (or about 8 to about 70), between 10 and 60 (or about 10 to about 60), between 20 and 50 (or about 20 and about 50), or between 30 and 40 (or between about 30 and about 40). In some embodiments, the scheelites may exhibit a dielectric constant of 8, 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, or 70 (or about 8, about 10, about 15, about 20, about 25, about 30, about 35, about 40, about 45, about 50, about 55, about 60, about 65, or about 70).
- The scheelite material in particular can be used as a low dielectric constant co-fireable material to fire with high dielectric constant materials, for example garnet and/or Bi doped materials, or any of the high magnetic rod materials discussed herein. It can be advantageous to use this material to avoid moding, and to offset the impedance effect of thinner substrates also necessary at high frequencies. The scheelite material can further be particularly useful for high frequency microstrip or surface integrated waveguide designs, for example due to the lowered temperature which allows for chemical compatibility and a wider range of dielectric constants.
- In some embodiments, aluminum oxide, such as Al2O3, can be added into the ring materials, such as the scheelite material, garnet material, spinel material, pyrochlore material, etc. discussed herein. For example, the aluminum oxide can be blended into the ring material as aluminum oxide, such as by combining different powders. In some embodiments, 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10 (or about 1, about 2, about 3, about 4, about 5, about 6, about 7, about 8, about 9, or about 10) wt. % of aluminum oxide can be incorporated into the scheelite material. In some embodiments, 1.2 (or about 1.2) wt. % of aluminum oxide can be incorporated into the scheelite material. In some embodiments, greater than 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10 (or about 1, about 2, about 3, about 4, about 5, about 6, about 7, about 8, about 9, or about 10) wt. % of aluminum oxide can be incorporated into the scheelite material. In some embodiments, less than 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10 (or about 1, about 2, about 3, about 4, about 5, about 6, about 7, about 8, about 9, or about 10) wt. % of aluminum oxide can be incorporated into the scheelite material. In some embodiments, between 2 and 6 (or between about 2 and about 6) wt. % of aluminum oxide can be incorporated into the scheelite material. In some embodiments, 1-10 wt. % (or about 1 to about 10 wt. %) aluminum oxide can be added into the scheelite material. The incorporation of aluminum oxide can regulate thermal expansion behavior and prevent cracking. For example, it can allow the scheelite material to better match a thermal expansion material of a high dielectric, such as a bismuth rich high dielectric constant garnet, as compared to undoped scheelite material, thereby allowing for successful co-firing without cracking. Specifically, the cracking can be prevented by regulating thermal expansion.
- Table 1 illustrates a number of different scheelite materials and their properties. In some embodiments, tungstates can have lower dielectric constants than corresponding molybdates, both of which can have a scheelite structure.
-
TABLE 1 Scheelite Materials Firing τF Temp. Dielectric (ppm/ Composition (° C.) Constant Q ° C.) (K0.5La0.5)MoO4 680 10.3 59000 −81 LiKSm2(MoO4)4 620 11.5 39000 −16 (Li0.5Sm0.5)MoO4 640 19.9 4570 +231 (Li0.5Nd0.5)MoO4 660 20.3 3000 +235 (Li0.5Ce0.5)MoO4 580 20.6 1990 +228 (Ag0.5Bi0.5)(Mo0.5W0.5) O 4500 26.3 10000 +20 (Li0.5Bi0.5)WO4 650 26.5 16400 +70 (Ag0.5Bi0.5)MoO4 690 30.4 12600 +52 (Li0.5Bi0.5)(Mo0.4W0.6)O4 620 31.5 8500 +20 (Na0.5Bi0.5)MoO4 690 34.4 12300 +43 (K0.5Bi0.5)MoO4 630 37.0 4000 +117 (Na0.35Bi0.65)(MO0.7V0.3)O4 680 44.0 6100 N/A (Li0.5Bi0.5)MoO4 560 44.4 3200 N/A (Na0.275Bi0.725)(Mo0.55V0.45) O 4700 51 5500 N/A (Na0.2Bi0.8)(Mo0.4V0.6) O 4700 58 5000 N/A (Li0.05Bi0.95)(Mo0.1V0.9)O4 650 81 1000 N/A - In some embodiments, the disclosed scheelite material can have a Q range of greater than 900, 1000, 1100, 1200, or 1300 (or greater than about 900, about 1000, about 1100, about 1200, or about 1300. In some embodiments, the disclosed scheelite material can have a Q range of less than 900, 1000, 1100, 1200, or 1300 (or less than about 900, 1000, 1100, 1200, or 1300.
- In some embodiments, the disclosed scheelite material can have a dielectric constant of between 10 and 100 (or between about 10 and about 100). In some embodiments, the disclosed scheelite material can have a dielectric constant of greater than 10, 20, 30, 40, 50, 60, 70, 80, 90, or 100 (or greater than about 10, about 20, about 30, about 40, about 50, about 60, about 70, about 80, about 90, or about 100). In some embodiments, the disclosed scheelite material can have a dielectric constant of less than 20, 30, 40, 50, 60, 70, 80, 90, or 100 (or less than about 20, about 30, about 40, about 50, about 60, about 70, about 80, about 90, or about 100).
- In some embodiments, the disclosed scheelite material can have a firing temperature of below 900, 850, 800, or 750° C. (or below about 900, about 850, about 800, or about 750° C.). In some embodiments, the disclosed scheelite material can have a firing temperature of greater than 900, 850, 800, or 750° C. (or greater than about 850, about 800, or about 750° C.). In some embodiments, the disclosed scheelite material can have a firing temperature of 775° C. (or about 775° C.).
- Table 2 illustrates experimental results of using a scheelite material. Further, Table 2 discloses potential device application for the scheelite materials.
-
TABLE 2 Scheelite Experimental Results Firing Dielectric Temperature, QF Product, Material Constant ° C. THz Device Application Na0.2Bi0.8Mo0.4V0.6O4 56.33 725 4.157 Triplate above resonance or below resonance; Microstrip below resonance Li0.05Bi0.95Mo0.1V0.9O4 73.23 750 4.921 Triplate above resonance or below resonance; Microstrip below resonance (Li0.5Bi0.5)(Mo0.4W0.6) O 430 ? ? Triplate below resonance; Microstrip below resonance (Na0.5Bi0.5)MoO4 16.19 700 3.288 Substrate Integrated Waveguides (SIW) below resonance Na0.35Bi0.65Mo0.7V0.3O4 43 750 Triplate above resonance or below resonance; Microstrip below resonance - Table 3 illustrates particular scheelite based compositions which can be advantageously co-fired with TTHiE high dielectric materials.
-
TABLE 3 Scheelite based TTHiE Co-Fired Compositions Expected Firing Dielectric Temp. Soak Fired OD Length Material Constant MS ° C. (hr) Density ε′ Q fo Shrinkage Shrinkage Na0.2Bi0.8Mo0.4V0.6O4 Li0.05Bi0.95Mo0.1V0.9O4 70 1429561 750 4 6.454 73.23 1584 3107.7 8.10% 7.23% Li0.5Bi0.5Mo0.4W0.6O4 30 Na0.5Bi0.5MoO4 20 1429563 700 4 4.431 16.19 508 6473.3 4.52% 3.38% Na2BiMg2V3O12 25 1429562 750 4 4.178 24.04 807 5359.1 8.10% 7.76% Na0.35Bi0.65Mo0.7V0.3O4 43 725 4 12.28% 11.29% Na0.35Bi0.65Mo0.7V0.3O4 43 725 4 10.93% 12.50 % BiVO 4 80 700 4 5.074 11.95% 11.17 % BiVO 4 80 700 4 4.926 10.82% 11.43 % BiVO 4 80 800 4 6.605 19.26% 18.39 % BiVO 4 80 800 4 6.554 18.94% 18.39 % BiVO 4 80 850 4 6.605 40 19.09% 17.39 % BiVO 4 80 850 4 6.610 19.09% 17.97% Na0.35Bi0.65Mo0.7V0.3O4 43 725 4 12.28% 11.29% Na0.35Bi0.65Mo0.7V0.3O4 43 725 4 10.93% 12.50% Na0.35Bi0.65Mo0.7V0.3O4 43 750 4 14.92% 15.09% Na0.35Bi0.65Mo0.7V0.3O4 43 750 4 13.73% 13.29% Na0.35Bi0.65Mo0.7V0.3O4 43 750 4 4.77 13.81% 13.29% Na0.35Bi0.65Mo0.7V0.3O4 43 750 4 4.80 13.73% 13.74% - As shown above, bismuth vanadate (BiVO4) can be a particularly useful scheelite material. In some embodiments, sodium or molybdenum can be added into the material.
- Table 4 illustrates other examples of materials having a scheelite structure which may be useful for co-firing.
-
TABLE 4 Materials Having Scheelite Structure Dielectric Firing Scheelite Constant Temperature (° C.) Na0.2Bi0.8Mo0.4V0.6O4 57 675 Li0.05Bi0.95Mo0.1V0.9O4 70 675 Li0.5Bi0.5Mo0.4W0.6O4 30 600 Li0.5Sm0.5MoO4 25 640 -
FIG. 9 illustrates an x-ray diffraction trace for BiVO4.FIG. 10 illustrates intensity graphs for Na0.35Bi0.65Mo0.7V0.3O4 as calcined. Both figures indicate that the material has a scheelite structure and only a scheelite structure is present. -
FIG. 11 illustrates a dilatometry testing of scheelite materials. The TTHIE-1950 is a Bi—Ca—Zr—Y—Fe—O material. It can be advantageous for the mean alpha of the non-TTHIE materials to match as closely as possible to the mean alpha of the TTHiE material, such as U.S. Pat. Nos. 9,263,175 and 9,527,776, the entirety of each of which is hereby incorporated by reference in its entirety. -
FIG. 12 illustrates dilatometry testing of BiVO4 with 1.2% Al2O3. As shown, the thermal expansion coefficient is a reasonable value to be co-fired with magnetic materials. - In some embodiments, the disclosed scheelite material can have a mean alpha within 1%, 5%, or 10% (or within about 1%, about 5%, or about 10%) of the TTHI material. In some embodiments, the mean alpha can be in the range of 6-13 (or about 6-about 13) ppm/degree C., such as 6, 7, 8, 9, 10, 11, 12, or 13 (or about 6, about 7, about 8, about 9, about 10, about 11, about 12, or about 13) ppm/degree C.
-
FIG. 13 illustrates the co-fire ideal cycle with garnet and dielectric factors. The ideal is that the OD of the pre-fired garnet rod is exactly (or about exactly) the same as the ID of the pressed dielectric tube at the end of the co-firing phase, but before cooling. Since the garnet has a fixed expansion, this is done by adjusting the shrinkage and initial size of the dielectric, thru control of green density. Diffusion occurs at the co-fire temperature after the garnet and dielectric are in contact, forming a bond; too much diffusion may cause dielectric loss. The garnet and dielectric remain in contact thru cooling, because their expansion (contraction) coefficients are the same, retaining the bond. - In some embodiments, other ring materials can be used for co-firing instead of scheelites, with or without the aluminum oxide discussed above. For example, spinels structures can be used as well. Table 5 illustrates potential spinel materials that can be used.
-
TABLE 5 Garnet Materials for Co-firing Firing Temperature Dielectric Qf product Composition (° C.) Constant (THz) tF (ppm/° C.) Na2MoO4 600 4.1 46.9 −76 Li2MoO4 540 5.5 59.8 −160 Li2WO4 640 5.5 97.3 −146 LiMgVO 4700 8.9 23.8 −140 - Other useful ring materials can be garnets, with or without the aluminum oxide discussed above, which are isostructural with the high dielectric nickel materials discussed above. Table 6 illustrates potential garnet materials.
-
TABLE 6 Spinel Materials for Co-firing Firing Qf Temp. Dielectric product tF (ppm/ Composition (° C.) Constant (THz) ° C.) Li0.16Na0.84Ca2Mg2V3O12 920 9.9 45.5 +2 LiCa3MgV3O12 900 10.5 74.7 −61 LiMg4V3O12 740 10.7 24.0 −11.7 LiCa3ZnV3O12 900 11.5 81.1 −72 Na2YMg2V3O12 850 12.3 23.2 −4.1 NaMg4V3O12 690 12.5 35.9 −58.1 Na2BiMg2V3O12 750 24? 4.4 -
FIG. 14 illustrates dilatometry results for Na2BiMg2V3O12. - Another useful ring material can include pyrochlore materials, with or without the aluminum oxide discussed above. Table 7 illustrates potential pyrochlore materials which can be used.
-
TABLE 7 Pyrochlore Materials for Co-firing Firing Qf tF Temp. Dielectric product (ppm/ Composition (° C.) Constant (THz) ° C.) (Bi1.92Zn0.08)(Zn0.64Nb1.36)O7 1000 75.0 1800 (Bi1.92Ca0.08)(Zn0.64Nb1.36)O7 960 76.0 3900 Bi2(Zn1/3Nb2/3−xVx)O7 (x = 850 78.5 3780 .001-.003) Bi18(Zn0.725Ca0.275)8Nb12O65 925 79 1000 +3.2 Bi3(Nb0.9V0.1)O7 870 80 600 −22 Bi2(Zn0.5Mg0.5)2/3Nb4/3O7 900 98.0 3000 Bi1.5Zn0.92Nb1.5O6.92 + 850 148.0 120 0.6% V2O5 - In some embodiments, higher energy comminution can reduce the firing temperatures to around 850° C., or 850° C. or below by increasing the surface area of the powder making it more reactive. In some embodiments, the pyrochlore materials can have a dielectric constant range of 60-100.
- Table 8 illustrates device applications for co-fire ferrite/dielectric combinations. It will be understood that the below table shows examples only, and the disclosure is not limited to the particular devices shown below.
-
TABLE 8 Example Uses of Co-Fired Materials Operating Dielectric's RF Device mode, above Co-fire dielectric Transmission or below Frequency Functional Ferrite constant line FMR Range Requirement Conventional 20-30 Stripline Above 600 MHz to Replace Garnet, 1200 ~3.5 GHz Production to 1950 ID Gauss grind/glue; allow metallization Spinel, up to 8-20 SIW, Below 10-60+ GHz 5G 5000 Gauss Microstrip component compatibility, subsystem integration TTHiE, 45-120 + Stripline Above 600 MHz to Replace 1150-1950 ~3.5 GHz Production Gauss ID grind/glue; allow metallization TTHiE 400- 20-30; Stripline, Below 1.8-6 GHz 5G 1950 Gauss 45-120+ Microstrip components/ subsystem integration - Embodiments of the disclosed composite microstrip circulators can be particularly advantageous for 5′ generation wireless system (5G) applications, though could also be used for early 4G and 3G applications as well. 5G technology is also referred to herein as 5G New Radio (NR). 5G networks can provide for significantly higher capacities than current 4G system, which allows for a larger number of consumers in an area. This can further improve uploading/downloading limits and requirements. In particular, the large number of circulators, such as those described herein, needed for 5G (typically 1 per front end module or FEM) requires further integration of components. The disclosed embodiments of circulators can allow for this integration and thus can be particularly advantageous. Other components in the front end module will be microstrip or SMT based.
- Preliminary specifications for 5G NR support a variety of features, such as communications over millimeter wave spectrum, beam forming capability, high spectral efficiency waveforms, low latency communications, multiple radio numerology, and/or non-orthogonal multiple access (NOMA). Although such RF functionalities offer flexibility to networks and enhance user data rates, supporting such features can pose a number of technical challenges.
- The teachings herein are applicable to a wide variety of communication systems, including, but not limited to, communication systems using advanced cellular technologies, such as LTE-Advanced, LTE-Advanced Pro, and/or 5G NR.
-
FIG. 15 is a schematic diagram of one example of acommunication network 10. Thecommunication network 10 includes a macrocell base station 1, amobile device 2, a smallcell base station 3, and astationary wireless device 4. - The illustrated
communication network 10 ofFIG. 15 supports communications using a variety of technologies, including, for example, 4G LTE, 5G NR, and wireless local area network (WLAN), such as Wi-Fi. Although various examples of supported communication technologies are shown, thecommunication network 10 can be adapted to support a wide variety of communication technologies. - Various communication links of the
communication network 10 have been depicted inFIG. 15 . The communication links can be duplexed in a wide variety of ways, including, for example, using frequency-division duplexing (FDD) and/or time-division duplexing (TDD). FDD is a type of radio frequency communications that uses different frequencies for transmitting and receiving signals. FDD can provide a number of advantages, such as high data rates and low latency. In contrast, TDD is a type of radio frequency communications that uses about the same frequency for transmitting and receiving signals, and in which transmit and receive communications are switched in time. TDD can provide a number of advantages, such as efficient use of spectrum and variable allocation of throughput between transmit and receive directions. - As shown in
FIG. 15 , themobile device 2 communicates with the macrocell base station 1 over a communication link that uses a combination of 4G LTE and 5G NR technologies. Themobile device 2 also communicates with the smallcell base station 3 which can include embodiments of the disclosure. In the illustrated example, themobile device 2 and smallcell base station 3 communicate over a communication link that uses 5G NR, 4G LTE, and Wi-Fi technologies. - In certain implementations, the
mobile device 2 communicates with the macrocell base station 2 and the smallcell base station 3 using 5G NR technology over one or more frequency bands that are less than 6 Gigahertz (GHz). In one embodiment, themobile device 2 supports a HPUE power class specification. - The illustrated small
cell base station 3, incorporating embodiments of the disclosure, also communicates with astationary wireless device 4. The smallcell base station 3 can be used, for example, to provide broadband service using 5G NR technology over one or more frequency bands above 6 GHz, including, for example, millimeter wave bands in the frequency range of 30 GHz to 300 GHz. - In certain implementations, the small
cell base station 3 communicates with thestationary wireless device 4 using beamforming. For example, beamforming can be used to focus signal strength to overcome path losses, such as high loss associated with communicating over millimeter wave frequencies. - The
communication network 10 ofFIG. 15 includes the macrocell base station 1, which can include embodiments of the disclosure, and the smallcell base station 3. In certain implementations, the smallcell base station 3 can operate with relatively lower power, shorter range, and/or with fewer concurrent users relative to the macrocell base station 1. The smallcell base station 3 can also be referred to as a femtocell, a picocell, or a microcell. - Although the
communication network 10 is illustrated as including two base stations, thecommunication network 10 can be implemented to include more or fewer base stations and/or base stations of other types. - The
communication network 10 ofFIG. 15 is illustrated as including one mobile device and one stationary wireless device. Themobile device 2 and thestationary wireless device 4 illustrate two examples of user devices or user equipment (UE). Although thecommunication network 10 is illustrated as including two user devices, thecommunication network 10 can be used to communicate with more or fewer user devices and/or user devices of other types. For example, user devices can include mobile phones, tablets, laptops, IoT devices, wearable electronics, and/or a wide variety of other communications devices. - User devices of the
communication network 10 can share available network resources (for instance, available frequency spectrum) in a wide variety of ways. - Enhanced mobile broadband (eMBB) refers to technology for growing system capacity of LTE networks. For example, eMBB can refer to communications with a peak data rate of at least 10 Gbps and a minimum of 100 Mbps for each user device. Ultra-reliable low latency communications (uRLLC) refers to technology for communication with very low latency, for instance, less than 2 ms. uRLLC can be used for mission-critical communications such as for autonomous driving and/or remote surgery applications. Massive machine-type communications (mMTC) refers to low cost and low data rate communications associated with wireless connections to everyday objects, such as those associated with Internet of Things (IoT) applications.
- The
communication network 10 ofFIG. 15 can be used to support a wide variety of advanced communication features, including, but not limited to eMBB, uRLLC, and/or mMTC. - A peak data rate of a communication link (for instance, between a base station and a user device) depends on a variety of factors. For example, peak data rate can be affected by channel bandwidth, modulation order, a number of component carriers, and/or a number of antennas used for communications.
- For instance, in certain implementations, a data rate of a communication link can be about equal to M*Blog2(1+S/N), where M is the number of communication channels, B is the channel bandwidth, and S/N is the signal-to-noise ratio (SNR).
- Accordingly, data rate of a communication link can be increased by increasing the number of communication channels (for instance, transmitting and receiving using multiple antennas), using wider bandwidth (for instance, by aggregating carriers), and/or improving SNR (for instance, by increasing transmit power and/or improving receiver sensitivity).
- 5G NR communication systems can employ a wide variety of techniques for enhancing data rate and/or communication performance.
-
FIG. 16 is a schematic diagram of one example of a communication link using carrier aggregation. Carrier aggregation can be used to widen bandwidth of the communication link by supporting communications over multiple frequency carriers, thereby increasing user data rates and enhancing network capacity by utilizing fragmented spectrum allocations. - In the illustrated example, the communication link is provided between a
base station 21 and amobile device 22. As shown inFIG. 16 the communications link includes a downlink channel used for RF communications from thebase station 21 to themobile device 22, and an uplink channel used for RF communications from themobile device 22 to thebase station 21. - Although
FIG. 16 illustrates carrier aggregation in the context of FDD communications, carrier aggregation can also be used for TDD communications. - In certain implementations, a communication link can provide asymmetrical data rates for a downlink channel and an uplink channel. For example, a communication link can be used to support a relatively high downlink data rate to enable high speed streaming of multimedia content to a mobile device, while providing a relatively slower data rate for uploading data from the mobile device to the cloud.
- In the illustrated example, the
base station 21 and themobile device 22 communicate via carrier aggregation, which can be used to selectively increase bandwidth of the communication link. Carrier aggregation includes contiguous aggregation, in which contiguous carriers within the same operating frequency band are aggregated. Carrier aggregation can also be non-contiguous, and can include carriers separated in frequency within a common band or in different bands. - In the example shown in
FIG. 16 , the uplink channel includes three aggregated component carriers fuL1, fuL2, and fuL3. Additionally, the downlink channel includes five aggregated component carriers fDL1, fDL2, fDL3, fDL4, and fDL5. Although one example of component carrier aggregation is shown, more or fewer carriers can be aggregated for uplink and/or downlink. Moreover, a number of aggregated carriers can be varied over time to achieve desired uplink and downlink data rates. - For example, a number of aggregated carriers for uplink and/or downlink communications with respect to a particular mobile device can change over time. For example, the number of aggregated carriers can change as the device moves through the communication network and/or as network usage changes over time.
- With reference to
FIG. 16 , the individual component carriers used in carrier aggregation can be of a variety of frequencies, including, for example, frequency carriers in the same band or in multiple bands. Additionally, carrier aggregation is applicable to implementations in which the individual component carriers are of about the same bandwidth as well as to implementations in which the individual component carriers have different bandwidths. -
FIG. 17A is a schematic diagram of one example of a downlink channel using multi-input and multi-output (MIMO) communications.FIG. 17B is schematic diagram of one example of an uplink channel using MIMO communications. - MIMO communications use multiple antennas for simultaneously communicating multiple data streams over common frequency spectrum. In certain implementations, the data streams operate with different reference signals to enhance data reception at the receiver. MIMO communications benefit from higher SNR, improved coding, and/or reduced signal interference due to spatial multiplexing differences of the radio environment.
- MIMO order refers to a number of separate data streams sent or received. For instance, MIMO order for downlink communications can be described by a number of transmit antennas of a base station and a number of receive antennas for UE, such as a mobile device. For example, two-by-two (2×2) DL MIMO refers to MIMO downlink communications using two base station antennas and two UE antennas. Additionally, four-by-four (4×4) DL MIMO refers to MIMO downlink communications using four base station antennas and four UE antennas.
- In the example shown in
FIG. 17A , downlink MIMO communications are provided by transmitting usingM antennas base station 41 and receiving usingN antennas mobile device 42. Accordingly,FIG. 17A illustrates an example of M×N DL MIMO. - Likewise, MIMO order for uplink communications can be described by a number of transmit antennas of UE, such as a mobile device, and a number of receive antennas of a base station. For example, 2×2 UL MIMO refers to MIMO uplink communications using two UE antennas and two base station antennas. Additionally, 4×4 UL MIMO refers to MIMO uplink communications using four UE antennas and four base station antennas.
- In the example shown in
FIG. 17B , uplink MIMO communications are provided by transmitting usingN antennas mobile device 42 and receiving usingM antennas base station 41. Accordingly,FIG. 17B illustrates an example of N×M UL MIMO. - By increasing the level or order of MIMO, bandwidth of an uplink channel and/or a downlink channel can be increased.
- Although illustrated in the context of FDD, MIMO communications are also applicable communication links using TDD.
- For these 5G networks, one form of base station will be massive multiple input, multiple output (MIMO) based, with an array of perhaps 64-128 antennas capable of multi-beam forming to interact with handheld terminals at very high data rates. Thus, embodiments of the disclosure can be incorporated into the base stations to provide for high capacity applications.
- This approach is similar to radar phased array T/R modules, with individual transceivers for each antenna element, although massive MIMO is not a phased array in the radar sense. The objective is optimum coherent signal strength at the terminal(s) rather than direction finding. Further, signal separation will be time division (TD) based, requiring a means of duplexing/switching to separate Tx and Rx signals
- For discussion, it is assumed that there is one Tx, one Rx module, one duplexing circulator and one antenna filter per antenna. However, other configurations can be used as well.
-
FIG. 18 shows a simplified version of an RF transmission system, omitting drivers and switching logic. As shown, the system can include a number of different components, including a circulator. Thus, embodiments of the disclosure can be used as the circulator in the RF system, either for newly created systems or as improved replacements for the previous systems. Specifically, embodiments of the disclosure relate to hybrid solutions using a stripline circulator, and microstrip or stripline topology for the remaining components. -
FIG. 19 illustrates the integrated component ofFIGS. 5A-B discussed above onto the simplified RF antenna structure. As shown, the substrate can include the co-fired ferrite/dielectric tile for the circulator. In addition, a coupler, switch, and load can also be applied to the dielectric tile outside of the ferrite. The conductors and the ground plane could be in a thick film silver. In some embodiments, the circulator subassembly can also be integrated with the power amplifier (PA) and loud noise amplifier (LNA) modules. - Embodiments of the disclosure can have advantages over circulators known in the art. For example,
-
- Couplers and other transmission lines have much lower insertion loss compared with other couplers, such as semiconductor couplers
- Coupling is more consistent
- Loads can dissipate heat more easily compared with soft substrate
- Circulators have lower loss than all-ferrite substrate based devices
- The dielectric is temperature stable, assisting the coupler and circulator's performance
- The size of the devices can be reduced by using higher dielectric constant ceramic dielectric if required
- Further, embodiments of the ceramic circulator can have the following advantages:
-
- Heat/power dissipation/thermal conductivity for PA and load
- Isotropic dielectric (except TTB) for coupler/filter design
- Range of dielectric constant (4-100+) for size reduction
- Low dielectric loss (coupler/filter)
- Tight dielectric constant tolerance (coupler/filter/antenna)
- Stable dielectric constant over temperature (coupler/filter/circulator)
- Modest Cost
- On the other hand, soft substrate (e.g., softboards) can have the following disadvantages:
-
- Poor conductivity due to plastic conductivity
- Anisotropic (xy versus z direction)
- Only 3-10 with some, fixed with others
- Higher losses
- Looser tolerances
- Unstable over temperature
- Accordingly, embodiments of the disclosure can have significant advantages over circulators previously known in the art.
-
FIG. 20 illustrates another embodiment of a MIMO system that the disclosed microstrip circulators can be incorporated into. With the advent of massive MIMO for 5G system the current antennas will be replaced with antenna arrays with, for example, 64 array elements. Each element can be fed by a separate front end module (FEM). -
FIG. 21 is a schematic diagram of one example of amobile device 800. Themobile device 800 includes abaseband system 801, atransceiver 802, afront end system 803,antennas 804, apower management system 805, amemory 806, auser interface 807, and abattery 808 and can interact with the base stations including embodiments of the microstrip circulators disclosed herein. - The
mobile device 800 can be used communicate using a wide variety of communications technologies, including, but not limited to, 2G, 3G, 4G (including LTE, LTE-Advanced, and LTE-Advanced Pro), 5G NR, WLAN (for instance, Wi-Fi), WPAN (for instance, Bluetooth and ZigBee), and/or GPS technologies. - The
transceiver 802 generates RF signals for transmission and processes incoming RF signals received from theantennas 804. It will be understood that various functionalities associated with the transmission and receiving of RF signals can be achieved by one or more components that are collectively represented inFIG. 21 as thetransceiver 802. In one example, separate components (for instance, separate circuits or dies) can be provided for handling certain types of RF signals. - In certain implementations, the
mobile device 800 supports carrier aggregation, thereby providing flexibility to increase peak data rates. Carrier aggregation can be used for both Frequency Division Duplexing (FDD) and Time Division Duplexing (TDD), and may be used to aggregate a plurality of carriers or channels. Carrier aggregation includes contiguous aggregation, in which contiguous carriers within the same operating frequency band are aggregated. Carrier aggregation can also be non-contiguous, and can include carriers separated in frequency within a common band or in different bands. - The
antennas 804 can include antennas used for a wide variety of types of communications. For example, theantennas 804 can include antennas associated transmitting and/or receiving signals associated with a wide variety of frequencies and communications standards. - In certain implementations, the
antennas 804 support MIMO communications and/or switched diversity communications. For example, MIMO communications use multiple antennas for communicating multiple data streams over a single radio frequency channel. MIMO communications benefit from higher signal to noise ratio, improved coding, and/or reduced signal interference due to spatial multiplexing differences of the radio environment. Switched diversity refers to communications in which a particular antenna is selected for operation at a particular time. For example, a switch can be used to select a particular antenna from a group of antennas based on a variety of factors, such as an observed bit error rate and/or a signal strength indicator. -
FIG. 22 is a schematic diagram of apower amplifier system 840 according to one embodiment. The illustratedpower amplifier system 840 includes abaseband processor 821, atransmitter 822, a power amplifier (PA) 823, adirectional coupler 824, abandpass filter 825, an antenna 826, a PAbias control circuit 827, and a PAsupply control circuit 828. The illustratedtransmitter 822 includes an I/Q modulator 837, amixer 838, and an analog-to-digital converter (ADC) 839. In certain implementations, thetransmitter 822 is included in a transceiver such that both transmit and receive functionality is provided. Embodiments of the disclosed microstrip circulators can be incorporated into the power amplifier system. - Disclosed herein are embodiments of a process for making an integrated microstrip component.
FIG. 23 discloses an embodiment of aprocess 300 that can be used. - Returning to
FIG. 23 , atstep 302, a ferrite disc or cylinder can be formed from a magnetic ceramic material by any suitable conventional process known in the art for making such elements, i.e., magnetic oxides of the types used in high frequency electronic components. Similarly, atstep 304, a substrate can be formed from a dielectric material by any suitable conventional process. In some embodiments, the ferrite disc can be sintered by firing it in a kiln. Some examples of materials and firing temperatures are set forth below, following this process flow description. However, persons skilled in the art to which the invention relates understand that the materials and processes by which magnetic ceramic and dielectric ceramic elements of this type are made are well known in the art. Therefore, suitable materials and temperatures are not listed exhaustively. All such suitable materials and process for making such rods, cylinders and similar elements of this type are intended to be within the scope of the invention. - At
step 306, the disc can be combined into the dielectric substrate with the aperture. For example, the outside surface of the disc can be machined to ensure it is of an outside diameter (OD) that is less than the inside diameter (ID) of the substrate aperture. In some embodiments, the OD is slightly smaller than the ID to enable the disc to be inserted into the substrate. - In some embodiments, the pre-fired disc can be received in an unfired or “green” substrate to form the
composite assembly 100 shown inFIGS. 4A-B . - At
step 308, the disc and substrate can be co-fired. That is,composite assembly 100 is fired. The co-firing temperature can be lower than the temperature at which disc was fired, to ensure that the physical and electrical properties of the disc remain unchanged. The co-firing temperature can be within the well-known range in which such components are conventionally fired. Importantly, co-firing causes the substrate to shrink around the disc, thereby securing them together. Afterwards, the outside surface of thecomposite assembly 100 can then be machined to ensure it is of a specified or otherwise predetermined OD. Further, this step can be used to metalize and/or magnetize thecomposite assembly 100 if the ferrite disc has not previously been magnetized. -
Steps composite assembly 100. For example, additional components can be added 310 onto the substrate, such as circuitry, to form final electronic components. Further, in some embodiments thecomposite assembly 100 can be sliced 312, or otherwise partitioned, to form a number of discrete assemblies. In some embodiments, both these optional steps can be performed and the particular order is not limiting. In some embodiments, only one of the optional steps can be taken. In some embodiments, neither of the optional steps can be taken. - Accordingly,
composite assemblies 100 can be used in manufacturing high frequency electronic components in the same manner as conventionally-produced assemblies of this type. However, the method of the present invention is more economical than conventional methods, as the invention does not involve the use of adhesives. -
FIG. 24 illustrates an example embodiment of a circulator as discussed herein. Thick film silver can be printed as the circuit. As per standard circulator applications, the circulator includesPort 1,Port 2, andPort 3. One of these ports can be blocked off to form an isolator. - Circuits and devices having one or more features as described herein can be implemented in RF applications such as a wireless base-station. Such a wireless base-station can include one or more antennas configured to facilitate transmission and/or reception of RF signals. Such antenna(s) can be coupled to circuits and devices having one or more circulators/isolators as described herein.
- Thus, in some embodiments, the above-disclosed material can be incorporated into different components of a telecommunication base station, such as used for cellular networks and wireless communications. An example perspective view of a
base station 2000 is shown inFIG. 25 , including both acell tower 2002 andelectronics building 2004. Thecell tower 2002 can include a number ofantennas 2006, typically facing different directions for optimizing service, which can be used to both receive and transmit cellular signals while the electronics building 2004 can hold electronic components such as filters, amplifiers, etc. discussed below. Both theantennas 2006 and electronic components can incorporate embodiments of the disclosed ceramic materials. -
FIG. 25 shows a base station. The base station can include an antenna that is configured to facilitate transmission and/or reception of RF signals. Such signals can be generated by and/or processed by a transceiver. For transmission, the transceiver can generate a transmit signal that is amplified by a power amplifier (PA) and filtered (Tx Filter) for transmission by the antenna. For reception, a signal received from the antenna can be filtered (Rx Filter) and amplified by a low-noise amplifier (LNA) before being passed on to the transceiver. In the example context of such Tx and Rx paths, circulators and/or isolators having one or more features as described herein can be implemented at or in connection with, for example, the PA circuit and the LNA circuit. The circulators and isolators can include embodiments of the material disclosed herein. Further, the antennas can include the materials disclosed herein, allowing them to work on higher frequency ranges. -
FIG. 26 illustrateshardware 2010 that can be used in the electronics building 2004, and can include the components discussed above with respect toFIG. 25 . For example, thehardware 2010 can be a base station subsystem (BSS), which can handle traffic and signaling for the mobile systems. -
FIG. 27 illustrates a further detailing of thehardware 2010 discussed above. Specifically,FIG. 27 depicts a cavity filter/combiner 2020 which can be incorporated into the base station. Thecavity filter 2020 can include, for example, bandpass filters such as those incorporating embodiments of the disclosed material, and can allow the output of two or more transmitters on different frequencies to be combined. -
FIG. 28 illustrates a circuit board 30004 which can include an isolator/circulator/filter 3002 and can be incorporated into the base station discussed above. - From the foregoing description, it will be appreciated that inventive products and approaches for composite microstrip circulators/isolators, materials, and methods of production are disclosed. While several components, techniques and aspects have been described with a certain degree of particularity, it is manifest that many changes can be made in the specific designs, constructions and methodology herein above described without departing from the spirit and scope of this disclosure.
- Certain features that are described in this disclosure in the context of separate implementations can also be implemented in combination in a single implementation. Conversely, various features that are described in the context of a single implementation can also be implemented in multiple implementations separately or in any suitable subcombination. Moreover, although features may be described above as acting in certain combinations, one or more features from a claimed combination can, in some cases, be excised from the combination, and the combination may be claimed as any subcombination or variation of any subcombination.
- Moreover, while methods may be depicted in the drawings or described in the specification in a particular order, such methods need not be performed in the particular order shown or in sequential order, and that all methods need not be performed, to achieve desirable results. Other methods that are not depicted or described can be incorporated in the example methods and processes. For example, one or more additional methods can be performed before, after, simultaneously, or between any of the described methods. Further, the methods may be rearranged or reordered in other implementations. Also, the separation of various system components in the implementations described above should not be understood as requiring such separation in all implementations, and it should be understood that the described components and systems can generally be integrated together in a single product or packaged into multiple products. Additionally, other implementations are within the scope of this disclosure.
- Conditional language, such as “can,” “could,” “might,” or “may,” unless specifically stated otherwise, or otherwise understood within the context as used, is generally intended to convey that certain embodiments include or do not include, certain features, elements, and/or steps. Thus, such conditional language is not generally intended to imply that features, elements, and/or steps are in any way required for one or more embodiments.
- Conjunctive language such as the phrase “at least one of X, Y, and Z,” unless specifically stated otherwise, is otherwise understood with the context as used in general to convey that an item, term, etc. may be either X, Y, or Z. Thus, such conjunctive language is not generally intended to imply that certain embodiments require the presence of at least one of X, at least one of Y, and at least one of Z.
- Language of degree used herein, such as the terms “approximately,” “about,” “generally,” and “substantially” as used herein represent a value, amount, or characteristic close to the stated value, amount, or characteristic that still performs a desired function or achieves a desired result. For example, the terms “approximately”, “about”, “generally,” and “substantially” may refer to an amount that is within less than or equal to 10% of, within less than or equal to 5% of, within less than or equal to 1% of, within less than or equal to 0.1% of, and within less than or equal to 0.01% of the stated amount. If the stated amount is 0 (e.g., none, having no), the above recited ranges can be specific ranges, and not within a particular % of the value. For example, within less than or equal to 10 wt./vol. % of, within less than or equal to 5 wt./vol. % of, within less than or equal to 1 wt./vol. % of, within less than or equal to 0.1 wt./vol. % of, and within less than or equal to 0.01 wt./vol. % of the stated amount.
- Some embodiments have been described in connection with the accompanying drawings. The figures are drawn to scale, but such scale should not be limiting, since dimensions and proportions other than what are shown are contemplated and are within the scope of the disclosed inventions. Distances, angles, etc. are merely illustrative and do not necessarily bear an exact relationship to actual dimensions and layout of the devices illustrated. Components can be added, removed, and/or rearranged. Further, the disclosure herein of any particular feature, aspect, method, property, characteristic, quality, attribute, element, or the like in connection with various embodiments can be used in all other embodiments set forth herein. Additionally, it will be recognized that any methods described herein may be practiced using any device suitable for performing the recited steps.
- While a number of embodiments and variations thereof have been described in detail, other modifications and methods of using the same will be apparent to those of skill in the art. Accordingly, it should be understood that various applications, modifications, materials, and substitutions can be made of equivalents without departing from the unique and inventive disclosure herein or the scope of the claims.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18/089,439 US20230242450A1 (en) | 2018-06-18 | 2022-12-27 | Modified scheelite material for co-firing |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862686191P | 2018-06-18 | 2018-06-18 | |
US16/440,221 US11565976B2 (en) | 2018-06-18 | 2019-06-13 | Modified scheelite material for co-firing |
US18/089,439 US20230242450A1 (en) | 2018-06-18 | 2022-12-27 | Modified scheelite material for co-firing |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/440,221 Continuation US11565976B2 (en) | 2018-06-18 | 2019-06-13 | Modified scheelite material for co-firing |
Publications (1)
Publication Number | Publication Date |
---|---|
US20230242450A1 true US20230242450A1 (en) | 2023-08-03 |
Family
ID=67432355
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/440,221 Active 2040-11-03 US11565976B2 (en) | 2018-06-18 | 2019-06-13 | Modified scheelite material for co-firing |
US18/089,439 Abandoned US20230242450A1 (en) | 2018-06-18 | 2022-12-27 | Modified scheelite material for co-firing |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/440,221 Active 2040-11-03 US11565976B2 (en) | 2018-06-18 | 2019-06-13 | Modified scheelite material for co-firing |
Country Status (8)
Country | Link |
---|---|
US (2) | US11565976B2 (en) |
JP (1) | JP2020002004A (en) |
KR (1) | KR20190142736A (en) |
CN (1) | CN110615478A (en) |
DE (1) | DE102019208855A1 (en) |
GB (1) | GB2576092B (en) |
SG (1) | SG10201905557RA (en) |
TW (1) | TW202000456A (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180166763A1 (en) | 2016-11-14 | 2018-06-14 | Skyworks Solutions, Inc. | Integrated microstrip and substrate integrated waveguide circulators/isolators formed with co-fired magnetic-dielectric composites |
US11373788B2 (en) | 2017-05-10 | 2022-06-28 | Skyworks Solutions, Inc. | Indium containing magnetic garnet materials |
EP3453682B1 (en) | 2017-09-08 | 2023-04-19 | Skyworks Solutions, Inc. | Low temperature co-fireable dielectric materials |
US11603333B2 (en) | 2018-04-23 | 2023-03-14 | Skyworks Solutions, Inc. | Modified barium tungstate for co-firing |
US11565976B2 (en) * | 2018-06-18 | 2023-01-31 | Skyworks Solutions, Inc. | Modified scheelite material for co-firing |
US11699836B2 (en) * | 2018-06-21 | 2023-07-11 | Skyworks Solutions, Inc. | Low firing temperature dielectric materials designed to be co-fired with high bismuth garnet ferrites for miniaturized isolators and circulators |
CN113149645B (en) * | 2021-03-31 | 2023-08-15 | 中国振华集团云科电子有限公司 | Low-temperature sintering temperature stable composite microwave dielectric ceramic and preparation method thereof |
US20230125826A1 (en) * | 2021-10-21 | 2023-04-27 | Ttm Technologies, Inc. | Circulator design and methods of fabricating the circulator |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160028139A1 (en) * | 2014-07-23 | 2016-01-28 | Skyworks Solutions, Inc. | Impedance matching in very high dielectric constant isolator/circulator junctions |
US20190393579A1 (en) * | 2018-06-21 | 2019-12-26 | Skyworks Solutions, Inc. | Low firing temperature dielectric materials designed to be co-fired with high bismuth garnet ferrites for miniaturized isolators and circulators |
US11081770B2 (en) * | 2017-09-08 | 2021-08-03 | Skyworks Solutions, Inc. | Low temperature co-fireable dielectric materials |
US11565976B2 (en) * | 2018-06-18 | 2023-01-31 | Skyworks Solutions, Inc. | Modified scheelite material for co-firing |
Family Cites Families (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3781704A (en) | 1972-03-30 | 1973-12-25 | Cutler Hammer Inc | High isolation circulator arrangement for low noise reflection type amplifiers |
US3851279A (en) | 1973-10-17 | 1974-11-26 | Hughes Aircraft Co | Tee junction waveguide circulator having dielectric matching posts at junction |
US4122418A (en) | 1975-05-10 | 1978-10-24 | Tsukasa Nagao | Composite resonator |
USH470H (en) | 1986-07-18 | 1988-05-03 | The United States Of America As Represented By The Secretary Of The Army | Millimeter wave microstrip circulator utilizing hexagonal ferrites |
GB2235339B (en) | 1989-08-15 | 1994-02-09 | Racal Mesl Ltd | Microwave resonators and microwave filters incorporating microwave resonators |
US5051869A (en) | 1990-05-10 | 1991-09-24 | Rockwell International Corporation | Advanced co-fired multichip/hybrid package |
US5058265A (en) | 1990-05-10 | 1991-10-22 | Rockwell International Corporation | Method for packaging a board of electronic components |
JPH06112028A (en) | 1992-09-30 | 1994-04-22 | Isuzu Motors Ltd | Sintered magnet |
JPH07312509A (en) | 1994-05-16 | 1995-11-28 | Murata Mfg Co Ltd | Irreversible circuit element |
JPH0878284A (en) | 1994-08-31 | 1996-03-22 | Murata Mfg Co Ltd | Composite electronic device and its production |
US5896563A (en) | 1995-04-27 | 1999-04-20 | Murata Manufacturing Co., Ltd. | Transmitting and receiving switch comprising a circulator and an automatic changeover switch which includes an impedance circuit |
US5959059A (en) | 1997-06-10 | 1999-09-28 | The B.F. Goodrich Company | Thermoplastic polyether urethane |
JP3149831B2 (en) | 1997-11-07 | 2001-03-26 | 日本電気株式会社 | High frequency integrated circuit and manufacturing method thereof |
JP2001028504A (en) | 1999-07-12 | 2001-01-30 | Nec Corp | Circulator |
DE19958276C1 (en) | 1999-12-03 | 2001-05-03 | Heraeus Quarzglas | Quartz glass preform production comprises preparing a quartz glass hollow cylinder collapsed on a quartz glass rod containing a dopant and collapsing the cylinder |
US6844789B2 (en) | 2001-11-13 | 2005-01-18 | Raytheon Company | Low temperature co-fired ceramic (LTCC) circulator |
KR100445906B1 (en) | 2001-12-14 | 2004-08-25 | 주식회사 이지 | Isolator/circulator having a propeller resonator symmetrically loaded with many magnetic walls |
US20030126247A1 (en) | 2002-01-02 | 2003-07-03 | Exanet Ltd. | Apparatus and method for file backup using multiple backup devices |
US6611180B1 (en) | 2002-04-16 | 2003-08-26 | Raytheon Company | Embedded planar circulator |
US6842140B2 (en) | 2002-12-03 | 2005-01-11 | Harris Corporation | High efficiency slot fed microstrip patch antenna |
TWI221618B (en) | 2003-08-12 | 2004-10-01 | Chilisin Electronics Corp | Ni-Zn ferrite low temperature sintered leadfree flux composition |
US20050040908A1 (en) | 2003-08-21 | 2005-02-24 | Lamina Ceramics Inc. | Low temperature co-fired ceramic-metal circulators and isolators |
JP2005210044A (en) | 2003-12-26 | 2005-08-04 | Tdk Corp | Inductor element containing circuit board and power amplifier module |
US7681069B1 (en) | 2004-08-30 | 2010-03-16 | Netapp, Inc. | Corruption checking during backup |
US8514031B2 (en) | 2004-12-17 | 2013-08-20 | Ems Technologies, Inc. | Integrated circulators sharing a continuous circuit |
US7256661B2 (en) | 2005-04-08 | 2007-08-14 | The Boeing Company | Multi-channel circulator/isolator apparatus and method |
US7242264B1 (en) | 2005-04-21 | 2007-07-10 | Hoton How | Method and apparatus of obtaining broadband circulator/isolator operation by shaping the bias magnetic field |
KR100698440B1 (en) | 2005-08-16 | 2007-03-23 | 한국과학기술연구원 | Process of preparing low- temperature sintered microwave dielectric ceramics |
US7941404B2 (en) | 2006-03-08 | 2011-05-10 | International Business Machines Corporation | Coordinated federated backup of a distributed application environment |
JP4840935B2 (en) | 2007-09-28 | 2011-12-21 | 双信電機株式会社 | Ceramic multilayer substrate |
US7687014B2 (en) | 2008-03-26 | 2010-03-30 | Skyworks Solutions, Inc. | Co-firing of magnetic and dielectric materials for fabricating composite assemblies for circulators and isolators |
KR101515680B1 (en) | 2008-10-20 | 2015-04-27 | 스카이워크스 솔루션즈, 인코포레이티드 | Magnetic-dielectric assemblies and methods of fabrication |
US8370307B2 (en) | 2009-09-01 | 2013-02-05 | Empire Technology Development Llc | Cloud data backup storage manager |
EP2957547B1 (en) | 2009-12-16 | 2019-07-31 | Skyworks Solutions, Inc. | Dielectric ceramic materials and associated methods |
US9505632B2 (en) | 2010-09-22 | 2016-11-29 | Skyworks Solutions, Inc. | Compositions and materials for electronic applications |
US9527776B2 (en) | 2010-11-30 | 2016-12-27 | Skyworks Solutions, Inc. | Effective substitutions for rare earth metals in compositions and materials for electronic applications |
US8696925B2 (en) | 2010-11-30 | 2014-04-15 | Skyworks Solutions, Inc. | Effective substitutions for rare earth metals in compositions and materials for electronic applications |
WO2012082642A2 (en) | 2010-12-13 | 2012-06-21 | Skyworks Solutions, Inc. | Novel enhanced high q material compositions and methods of preparing same |
CN102249663B (en) | 2011-04-21 | 2013-05-22 | 西安交通大学 | Bismuth-vanadium-based low temperature sintered microwave dielectric ceramic material and preparation method thereof |
CN102249664A (en) | 2011-04-27 | 2011-11-23 | 西安工业大学 | Potassium-based vanadium-based low-temperature sintered microwave dielectric ceramic material and preparation method thereof |
US9214712B2 (en) | 2011-05-06 | 2015-12-15 | Skyworks Solutions, Inc. | Apparatus and methods related to ferrite based circulators |
WO2012170259A2 (en) | 2011-06-06 | 2012-12-13 | Skyworks Solutions, Inc. | Rare earth reduced garnet systems and related microwave applications |
JP5725186B2 (en) | 2011-08-24 | 2015-05-27 | 株式会社村田製作所 | High frequency front end module |
JP6231555B2 (en) | 2012-05-18 | 2017-11-15 | スカイワークス ソリューションズ,インコーポレイテッドSkyworks Solutions,Inc. | Apparatus and method for junction type ferrite device with improved insertion loss performance |
CN103011810B (en) | 2012-12-07 | 2015-09-23 | 桂林理工大学 | Low-temperature sintering can contain lithium garnet structure microwave dielectric ceramic Li 2ca 2biV 3o 12and preparation method thereof |
US20140181441A1 (en) | 2012-12-21 | 2014-06-26 | Commvault Systems, Inc. | Identifying files for multiple secondary copy operations using data obtained during backup of primary storage |
CN103172376B (en) | 2013-03-20 | 2014-07-09 | 华为技术有限公司 | Scheelite type microwave dielectric ceramic material and preparation method thereof |
CN103121843A (en) | 2013-03-25 | 2013-05-29 | 桂林理工大学 | Microwave dielectric ceramic Li2Mg2W3O12 capable of being sintered at low temperature and preparation method thereof |
EP2886524A1 (en) | 2013-12-18 | 2015-06-24 | Skyworks Solutions, Inc. | Tunable resonators using high dielectric constant ferrite rods |
CN103715487B (en) | 2014-01-13 | 2016-03-16 | 中国科学院紫金山天文台 | The miniaturized microwave isolator of novel C wave band and application |
JP6722684B2 (en) | 2015-01-30 | 2020-07-15 | ロジャーズ コーポレーション | MO-doped Co2Z type ferrite composite material for ultra-high frequency |
US9771304B2 (en) | 2015-06-15 | 2017-09-26 | Skyworks Solutions, Inc. | Ultra-high dielectric constant garnet |
US10773972B2 (en) | 2016-07-13 | 2020-09-15 | Skyworks Solutions, Inc. | Temperature insensitive dielectric constant garnets |
AU2017297452B2 (en) | 2016-07-15 | 2021-10-28 | Ecolab Usa Inc. | Method for improving overflow clarity in production of coal |
US20180166763A1 (en) | 2016-11-14 | 2018-06-14 | Skyworks Solutions, Inc. | Integrated microstrip and substrate integrated waveguide circulators/isolators formed with co-fired magnetic-dielectric composites |
US11373788B2 (en) | 2017-05-10 | 2022-06-28 | Skyworks Solutions, Inc. | Indium containing magnetic garnet materials |
US11603333B2 (en) | 2018-04-23 | 2023-03-14 | Skyworks Solutions, Inc. | Modified barium tungstate for co-firing |
-
2019
- 2019-06-13 US US16/440,221 patent/US11565976B2/en active Active
- 2019-06-14 JP JP2019110830A patent/JP2020002004A/en active Pending
- 2019-06-14 TW TW108120793A patent/TW202000456A/en unknown
- 2019-06-17 KR KR1020190071528A patent/KR20190142736A/en unknown
- 2019-06-17 CN CN201910524247.6A patent/CN110615478A/en active Pending
- 2019-06-17 SG SG10201905557RA patent/SG10201905557RA/en unknown
- 2019-06-18 DE DE102019208855.4A patent/DE102019208855A1/en active Pending
- 2019-06-18 GB GB1908721.2A patent/GB2576092B/en active Active
-
2022
- 2022-12-27 US US18/089,439 patent/US20230242450A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160028139A1 (en) * | 2014-07-23 | 2016-01-28 | Skyworks Solutions, Inc. | Impedance matching in very high dielectric constant isolator/circulator junctions |
US11081770B2 (en) * | 2017-09-08 | 2021-08-03 | Skyworks Solutions, Inc. | Low temperature co-fireable dielectric materials |
US11565976B2 (en) * | 2018-06-18 | 2023-01-31 | Skyworks Solutions, Inc. | Modified scheelite material for co-firing |
US20190393579A1 (en) * | 2018-06-21 | 2019-12-26 | Skyworks Solutions, Inc. | Low firing temperature dielectric materials designed to be co-fired with high bismuth garnet ferrites for miniaturized isolators and circulators |
Also Published As
Publication number | Publication date |
---|---|
DE102019208855A1 (en) | 2019-12-19 |
KR20190142736A (en) | 2019-12-27 |
GB2576092A (en) | 2020-02-05 |
TW202000456A (en) | 2020-01-01 |
GB2576092B (en) | 2021-06-23 |
SG10201905557RA (en) | 2020-01-30 |
JP2020002004A (en) | 2020-01-09 |
US11565976B2 (en) | 2023-01-31 |
US20190382316A1 (en) | 2019-12-19 |
CN110615478A (en) | 2019-12-27 |
GB201908721D0 (en) | 2019-07-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11804642B2 (en) | Integrated microstrip and substrate integrated waveguide circulators/isolators formed with co-fired magnetic-dielectric composites | |
US11715869B2 (en) | Low temperature co-fireable dielectric materials | |
US11565976B2 (en) | Modified scheelite material for co-firing | |
US11958778B2 (en) | Modified barium tungstate for co-firing | |
US11936088B2 (en) | Co-firing of low firing temperature dielectric materials with high bismuth garnet ferrites for miniaturized isolators and circulators | |
US12065381B2 (en) | Temperature-stable, low-dielectric constant material with an ultra-low loss tangent | |
US20240079753A1 (en) | Fabrication of surface mount microstrip circulators using a ferrite and ceramic dielectric assembly substrate | |
US20220208414A1 (en) | Low loss tangent dielectric based on spinel-structured oxide | |
US20240124361A1 (en) | Methods of forming articles having spinel-based oxides containing magnesium, aluminum and titanium | |
US20210050133A1 (en) | Sintering aids for dielectric materials configured for co-firing with nickel zinc ferrites | |
TWI851532B (en) | Integrated microstrip and substrate integrated waveguide circulators/isolators formed with co-fired magnetic-dielectric composites |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
AS | Assignment |
Owner name: TRANS-TECH, INC., MARYLAND Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SKYWORKS SOLUTIONS, INC.;REEL/FRAME:063727/0270 Effective date: 20230407 |
|
AS | Assignment |
Owner name: ALLUMAX TTI, LLC, MICHIGAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:TRANS-TECH, INC.;REEL/FRAME:063991/0097 Effective date: 20230407 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |