US20220148902A1 - Cleaning method and substrate processing apparatus - Google Patents
Cleaning method and substrate processing apparatus Download PDFInfo
- Publication number
- US20220148902A1 US20220148902A1 US17/586,333 US202217586333A US2022148902A1 US 20220148902 A1 US20220148902 A1 US 20220148902A1 US 202217586333 A US202217586333 A US 202217586333A US 2022148902 A1 US2022148902 A1 US 2022148902A1
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- United States
- Prior art keywords
- edge ring
- processing apparatus
- substrate processing
- central edge
- electrostatic chuck
- Prior art date
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- 238000012545 processing Methods 0.000 title claims abstract description 91
- 238000004140 cleaning Methods 0.000 title claims abstract description 66
- 239000000758 substrate Substances 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title abstract description 60
- 230000007246 mechanism Effects 0.000 claims abstract description 20
- 239000007789 gas Substances 0.000 claims description 61
- 239000002245 particle Substances 0.000 claims description 41
- 230000005684 electric field Effects 0.000 claims description 7
- 238000006073 displacement reaction Methods 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 66
- 238000012546 transfer Methods 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000002826 coolant Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 230000008094 contradictory effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B6/00—Cleaning by electrostatic means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
Definitions
- the present disclosure relates to a cleaning method and a substrate processing apparatus.
- the present disclosure provides a technique for removing particles from an edge ring and its neighboring components.
- a method for cleaning an edge ring including an inner edge ring provided near a substrate mounted on an electrostatic chuck in a processing chamber, a central edge ring that is provided at an outer side of the inner edge ring and vertically movable by a moving mechanism, and an outer edge ring provided at an outer side of the central edge ring, including: applying a direct current voltage to the electrostatic chuck; and moving the central edge ring upward or downward.
- FIG. 1 is a longitudinal cross-sectional view showing an example of a substrate processing apparatus according to an embodiment
- FIG. 2 shows an example of an edge ring and an example of a moving mechanism according to an embodiment
- FIGS. 3A to 3C show exemplary states of particles in an embodiment
- FIG. 4 is a flowchart showing an example of a cleaning process using a cleaning method 1 and wafer processing according to an embodiment
- FIG. 5 is a flowchart showing an example of a cleaning process using a cleaning method 2 and wafer processing according to the embodiment.
- FIG. 6 is a flowchart showing an example of a cleaning process using a cleaning method 3 and wafer processing according to the embodiment.
- FIG. 1 shows an example of a configuration of the substrate processing apparatus 5 according to the embodiment.
- a capacitively coupled parallel plate plasma processing apparatus will be described as an example of the substrate processing apparatus 5 .
- the substrate processing apparatus 5 includes a processing chamber 10 that is a cylindrical vacuum container made of a metal, e.g., aluminum, stainless steel, or the like. In the processing chamber 10 , plasma processing is performed. The processing chamber 10 is grounded.
- a disc-shaped mounting table 12 which serves as a substrate holding table and a lower electrode, is provided at a lower central portion in the processing chamber 10 for mounting thereon a wafer W.
- the mounting table 12 includes an electrostatic chuck 36 and a base 12 a .
- the base 12 a is supported by a conductive cylindrical supporting portion 16 that is made of, e.g., aluminum, and extends vertically upward from a bottom portion of the processing chamber 10 , and a housing 100 adjacent to the inside thereof.
- An annular gas exhaust passage 18 is formed between the conductive cylindrical supporting portion 16 and a sidewall of the processing chamber 10 .
- An annular baffle plate 20 is attached to an upper portion or an inlet of the gas exhaust passage 18 .
- a gas exhaust port 22 is provided at a bottom portion of the gas exhaust passage 18 .
- a gas exhaust unit 26 is connected to each of the gas exhaust ports 22 through a gas exhaust line 24 .
- the gas exhaust unit 26 includes a vacuum pump such as a turbo molecular pump and reduces the pressure in a plasma generation space S formed between the mounting table 12 and the shower head 51 in the processing chamber 10 to a desired vacuum level.
- a gate valve 28 for opening and closing a loading/unloading port 27 for the wafer W is attached to the outer side of the sidewall of the processing chamber 10 .
- a second high frequency power supply 30 is electrically connected to the mounting table 12 through a matching unit 32 and a power supply line 34 .
- the second high frequency power supply 30 can output a high frequency power LF having a second frequency (e.g., 13.56 MHz or the like) suitable for controlling the energy of ions attracted to the wafer W at a variable power.
- the matching unit 32 has a reactance-variable matching circuit for matching an impedance of the second high frequency power supply 30 side and an impedance of a load (plasma or the like) side.
- the electrostatic chuck 36 for holding the wafer W by an electrostatic attractive force is provided on an upper surface of the base 12 a .
- the electrostatic chuck 36 includes an electrode 36 a made of a conductive film, and the electrode 36 a is embedded between two insulating films 36 b .
- a DC power supply 40 is electrically connected to the electrode 36 a through a switch 42 and a coated line 43 .
- the wafer W is attracted to and held on the electrostatic chuck 36 by an electrostatic force generated by a DC voltage (HV) supplied from the DC power supply 40 .
- HV DC voltage
- An annular coolant flow path 44 extending in a circumferential direction is provided in the mounting table 12 .
- a coolant having a predetermined temperature e.g., cooling water cw
- a temperature of the wafer W on the electrostatic chuck 36 is controlled by the temperature of the coolant.
- a heater may be provided in the mounting table 12 and may control the temperature of the wafer W with the temperature of the heater and the coolant.
- a heat transfer gas (e.g., He gas or the like) from a heat transfer gas supply unit is supplied to a gap between an upper surface of the electrostatic chuck 36 and a backside of the wafer W through a gas supply line 50 .
- the heat transfer gas has a function of improving the heat transfer efficiency between the upper surface of the electrostatic chuck 36 and the backside of the wafer W.
- the mounting table 12 is provided with a pusher pin that is vertically movable through the mounting table 12 to load and unload the wafer W and a lifting mechanism thereof.
- a shower head 51 is provided at an opening formed at a ceiling portion of the processing chamber 10 .
- the shower head 51 is attached to the opening formed at the ceiling portion of the processing chamber 10 via a shield ring 54 that covers an outer peripheral portion of the shower head 51 , and blocks the ceiling portion.
- the shower head 51 may be made of aluminum or silicon.
- the shower head 51 also serves as an upper electrode facing the mounting table 12 .
- a gas inlet port 56 for introducing a gas is formed at the shower head 51 .
- the shower head 51 has therein a diffusion space 58 extending from the gas inlet port 56 .
- the gas supplied from a gas supply source 66 is diffused to the diffusion space 58 through the gas inlet port 56 and then introduced into the plasma generation space S through multiple gas supply holes 52 .
- a first high frequency power supply 57 is electrically connected to the shower head 51 through a matching unit 59 and a power supply line 60 .
- the first high frequency power supply 57 in outputting a high frequency power HF suitable for plasma generation, can output a high frequency power HF having a first frequency that is higher (e.g., 40 MHz or the like) than the second frequency and can generate plasma by high frequency discharge at a variable power.
- the matching unit 59 has a reactance-variable matching circuit for matching an impedance of the first high frequency power supply 57 side and the impedance of the load (plasma or the like) side.
- a control unit 74 includes, e.g., a microcomputer, and controls the operations of the respective components of the substrate processing apparatus 5 and the operation of the entire apparatus.
- the respective components of the substrate processing apparatus 5 include the gas exhaust unit 26 , the first high frequency power supply 57 , the second high frequency power supply 30 , the matching units 32 and 59 , the switches 42 , 82 and 85 , the gas supply source 66 , the chiller unit, the heat transfer gas supply unit, and the like.
- the gate valve 28 is opened and the wafer W is loaded into the processing chamber 10 through the loading/unloading port 27 .
- the wafer W on the pusher pin is moved and mounted on the electrostatic chuck 36 by moving the pusher pin.
- a predetermined gas is introduced into the processing chamber 10 from the gas supply source 66 at a predetermined flow rate and a predetermined flow rate ratio, and the gas exhaust unit 26 reduces the pressure in the processing chamber 10 to a predetermined set value.
- the first high frequency power supply 57 is switched on to output the high frequency power HF for plasma generation at a predetermined level.
- the high frequency power HF for plasma generation is applied to the shower head 51 via the matching unit 59 and the power supply line 60 .
- the second high frequency power supply 30 is switched on to output the high frequency power LF at a predetermined level.
- the high frequency power LF is applied to the mounting table 12 via the matching unit 32 and the power supply line 34 .
- a heat transfer gas is supplied to a gap between the upper surface of the electrostatic chuck 36 and the backside of the wafer W, and the switch 42 is switched on to apply a DC voltage from the DC power supply 40 to the electrode 36 a of the electrostatic chuck 36 .
- the heat transfer gas is confined to the backside of the wafer W by the electrostatic attractive force.
- An edge ring 38 is provided at the vicinity of the wafer W that is the outer peripheral side of the mounting table 12 to annularly surround the outer edge of the wafer W.
- the edge ring 38 is divided into an inner edge ring 38 i , a central edge ring 38 m , and an outer edge ring 38 o .
- An electrode 83 may be buried in the outer edge ring 38 o , and the DC power supply 84 may be electrically connected to the electrode 83 through the switch 85 and a coated line 86 . Accordingly, a DC voltage can be applied to the outer edge ring 38 o.
- a DC power supply 81 may be electrically connected to the shower head 51 through the switch 82 and a coated line 87 . Accordingly, a DC voltage can be applied to the shower head 51 .
- the inner edge ring 38 i is closest to the wafer W mounted on the mounting table 12 in the processing chamber.
- the central edge ring 38 m is provided at the outer side of the inner edge ring 38 i and is vertically movable by a moving mechanism 200 .
- the outer edge ring 38 o is provided at the outer side of the central edge ring 38 m.
- the moving mechanism 200 vertically moves the central edge ring 38 m .
- the moving mechanism 200 has a lift pin 102 .
- the lift pin 102 is vertically moved via a member 104 a and a bearing portion 105 by power of a piezoelectric actuator 101 . Accordingly, a connecting portion 103 is vertically moved, and the central edge ring 38 m connected to the connecting portion 103 is vertically moved.
- FIG. 2 shows an example of an enlarged longitudinal cross section of the edge ring 38 and its neighboring parts.
- FIG. 2 shows the edge ring 38 , the moving mechanism 200 and the piezoelectric actuator 101 according to an embodiment.
- the inner edge ring 38 i is provided near the outer periphery of the wafer W to surround the wafer W at the bottom portion of the wafer W.
- the inner edge ring 38 i is the innermost member of the edge ring 38 .
- the central edge ring 38 m is provided at the outer side of the inner edge ring 38 i to surround the inner edge ring 38 i .
- the outer edge ring 38 o is provided at the outer side of the central edge ring 38 m .
- the outer edge ring 38 o is the outermost member of the edge ring 38 .
- the inner edge ring 38 i is fixed to the upper surface of the electrostatic chuck 36 via a heat transfer sheet 39 i .
- the central edge ring 38 m is vertically movable by the moving mechanism 200 .
- the outer edge ring 38 o is fixed to the upper surface of the electrostatic chuck 36 via a heat transfer sheet.
- the central edge ring 38 m has an annular portion 38 m 1 surrounding the peripheral portion of the wafer W and three tab portions 38 m 2 .
- the tab portions 38 m 2 are disposed at an equal interval on the outer peripheral side of the annular portion 38 m 1 .
- the tap portions 38 m 2 are rectangular members projecting from the outer peripheral side of the annular portion 38 m 1 .
- the annular portion 38 m 1 and the inner edge ring 38 i have an L-shaped longitudinal cross section.
- the tab portions 38 m 2 of the central edge ring 38 m are connected to the annular connecting portion 103 .
- the connecting portion 103 is vertically movable in a space 16 a provided in the conductive cylindrical supporting portion 16 .
- the housing 100 is made of an insulator such as alumina or the like.
- the housing 100 has a side portion and a bottom portion disposed close to the conductive cylindrical supporting portion 16 inside the conductive cylindrical supporting portion 16 .
- a recess 100 a is formed on an inner lower side of the housing 100 .
- a moving mechanism 200 is provided in the recess 100 a of the housing 100 .
- the moving mechanism 200 vertically moves the central edge ring 38 m and includes the lift pin 102 and the bearing portion 105 .
- the lift pin 102 extends through a pin hole that penetrates the housing 100 and the mounting table 12 .
- the lift pin 102 is brought into contact with a bottom surface of the connecting portion 103 in the space 16 a formed in the conductive cylindrical supporting portion 16 .
- the bearing portion 105 is fitted to the member 104 a provided in the housing 100 .
- An O-ring 111 is provided at the pin hole to separate a vacuum space and an atmospheric space.
- the lower end of the lift pin 102 is fitted into a recess 105 a formed at a leading end of the bearing portion 105 .
- the bearing portion 105 is vertically moved via the member 104 a by the positioning of the piezoelectric actuator 101 , the lift pin 102 is vertically moved, thereby raising or lowering the bottom surface of the connecting portion 103 . Accordingly, the central edge ring 38 m is vertically moved via the connecting portion 103 .
- the upper end of the piezoelectric actuator 101 is fixed to the member 104 a by a screw 104 c , and a lower end of the piezoelectric actuator 101 is fixed to a member 104 b by a screw 104 d . Accordingly, the piezoelectric actuator 101 is fixed to the housing 100 and interposed between the members 104 a and 104 b.
- the piezoelectric actuator 101 is a positioning element utilizing a piezoelectric effect and can perform positioning with a resolution of about 0.006 mm (6 ⁇ m).
- the lift pin 102 is vertically moved depending on the vertical displacement of the piezoelectric actuator 101 . Accordingly, the central edge ring 38 m is moved by a predetermined height with 0.006 mm as the minimum unit.
- the piezoelectric actuators 101 are provided one-to-one with the lift pins 102 in the inner space of the housing 100 positioned below the lift pins 102 .
- three moving mechanisms 200 and three piezoelectric actuators 101 are provided one-to-one with the lift pins 102 arranged at three positions inside the housing 100 .
- the members 104 a and 104 b are annular members, and vertically fasten the three piezoelectric actuators 101 with screws 104 c and 104 d such that the three piezoelectric actuators 101 are connected to each other by the members 104 a and 104 b .
- the piezoelectric actuator 101 is an example of a driving unit.
- the lift pins 102 are provided at three locations at equal intervals in the circumferential direction of the central edge ring 38 m . With this configuration, the lift pins 102 lift the central edge ring 38 m upward from the three positions to a predetermined height via the annular connecting portion 103 .
- a recess having a width greater than that of the tab portion 38 m 2 is formed on a bottom surface of the outer edge ring 38 o and above the tab portion 38 m 2 of the central edge ring 38 m .
- the mounting table 12 and the electrostatic chuck 36 are supported by the housing 100 , and the moving mechanism 200 and the driving unit are attached to the housing 100 . Accordingly, only the central edge ring 38 m can be vertically moved using the conventional electrostatic chuck 36 without design changes of the electrostatic chuck 36 .
- a predetermined space is provided between the upper surface of the electrostatic chuck 36 and the bottom surface of the central edge ring 38 m , and the central edge ring 38 m can be moved not only in the upward direction but also in the downward direction. Accordingly, the central edge ring 38 m can be moved not only in the upward direction but also in the downward direction within a predetermined space by a predetermined height before and during the processing of the wafer W. By moving the central edge ring 38 m not only in the upward direction but also in the downward direction, the control range of the sheath can be expanded.
- the driving unit is not limited to the piezoelectric actuator 101 , and a motor capable of controlling the positioning with a resolution of about 0.006 mm may be used.
- a single driving unit or a plurality of driving units there may be provided a single driving unit or a plurality of driving units.
- the driving units may share a motor for vertically moving the pusher pins for lifting the wafer W. In that case, a mechanism for switching the power of the motor by using a gear and a power switching unit and transferring the switched power to the pusher pin for the wafer W and the lift pins 102 for the central edge ring 38 m , and a mechanism for controlling the vertical movement of the lift pins 102 with the resolution of about 0.006 mm are required.
- the central edge ring 38 m disposed on the outer periphery of a 300 mm wafer W has a diameter of about 310 mm, it is preferable to provide a separate driving unit for each lift pin 102 as in the present embodiment.
- the control unit 74 may determine the vertical displacement of the piezoelectric actuator 101 based on the consumption amount of the central edge ring 38 m .
- the control unit 74 may determine the vertical displacement of the piezoelectric actuator 101 based on the processing conditions of the wafer processing and the cleaning process regardless of the consumption amount of the central edge ring 38 m.
- the central edge ring 38 m is vertically moved during the cleaning process. Accordingly, it is possible to effectively remove particles adhered to the bottom surface of the central edge ring 38 m and the periphery of the central edge ring 38 m.
- Tests were conducted to find positions where particles tend to be accumulated in the processing chamber 10 having the edge ring 38 configured as described above. The test results will be described with reference to FIGS. 3A to 3C , showing exemplary states of particles in an embodiment and a comparative example.
- FIG. 3A shows positions where particles tend to be accumulated in the case of performing plasma processing by vertically moving the central edge ring 38 m .
- particles tend to be accumulated on the entire surface of the inner edge ring 38 i and on the inner surface and the bottom surface of the central edge ring 38 m.
- a cleaning method 1 will be described.
- a DC voltage is applied to the electrode 36 a of the electrostatic chuck 36 .
- the central edge ring 38 m is vertically moved.
- FIG. 3A i.e., the outer peripheral sidewall of the wafer W, the sidewall of the electrostatic chuck 36 below the wafer W, the entire surface of the inner edge ring 38 i , and the entire bottom surface of the central edge ring 38 m , as indicated by A in FIG. 3C .
- the DC voltage is applied to the electrode 36 a and, thus, an electric field is generated between the edge ring 38 and the electrostatic chuck 36 .
- the central edge ring 38 m is vertically moved in that state, a space between the central edge ring 38 m , the inner edge ring 38 i , and the outer edge ring 38 o is changed. Accordingly, the direction or the intensity of the electric field generated in the space can be changed. In that case, the direction or the intensity of the electric field is constantly changed due to the changes in the space near the central edge ring 38 m by raising or lowering the central edge ring 38 m . As a consequence, particles are accumulated near the central edge ring 38 m and its neighboring parts, and the cleaning effect can be enhanced. As a result, as can be seen from FIG. 3C , it is possible to peel-off and remove the particles from the bottom surface of the central edge ring 38 m and its neighboring parts, which are not easily removable.
- the DC voltage applied to the electrode 36 a of the electrostatic chuck 36 may be a positive voltage or a negative voltage. Alternatively, a positive voltage and a negative voltage may be alternately applied. By applying a positive DC voltage, negatively charged particles are likely to be peeled off. By applying a negative DC voltage, positively charged particles are likely to be peeled off.
- the polarity of the DC voltage applied to the electrode 36 a may be controlled depending on types of deposits adhered to the peripheral portion of the central edge ring 38 m . In the case of alternately applying a positive DC voltage and a negative DC voltage, positively charged particles and negatively charged particles tend to be peeled off.
- the effect of the cleaning method 1 can be obtained by applying a DC voltage to at least one of the electrode 36 a , the electrode 83 , and the shower head 51 , and vertically moving the central edge ring 38 m .
- a cleaning method 3 to be described below it is possible to apply a DC voltage to at least one of the electrode 36 a , the electrode 83 , and the shower head 51 , and vertically move the central edge ring 38 m.
- the cleaning method 2 First, a cleaning gas is supplied to a position below the central edge ring 38 m . Then, the central edge ring 38 m is vertically moved. As a result, as can be seen from FIG. 3C , it is possible to remove particles from all the surfaces of the positions where particles tend to accumulate in FIG. 3A .
- N 2 gas is supplied as an example of the cleaning gas. If the central edge ring 38 m is raised, the N 2 gas flows toward the position below the central edge ring 38 m . If the central edge ring 38 m is lowered in that state, the peel-off particles and the N 2 gas flow from the position below the central edge ring 38 m toward the side surface thereof.
- the particles floating at the central edge ring 38 m that is a movable part of the edge ring 38 and its surroundings can flow by the viscous force of the N 2 gas.
- the gas flow rate at the central edge ring 38 m and its surroundings constantly changes during the cleaning by raising or lowering the central edge ring 38 m .
- particles can be easily removed from the central edge ring 38 m and its surroundings, and the cleaning effect can be further enhanced.
- the substrate processing apparatus 5 does not necessarily require the electrostatic chuck 36 .
- the cleaning method 3 according to the embodiment is combination of the cleaning methods 1 and 2 according to the embodiment.
- the cleaning method 3 can provide both effects of the cleaning methods 1 and 2. For example, positive and negative charged particles can be removed using an electric field generated by the cleaning method 1, and neutral particles can be removed using a flow of N 2 gas supplied by the cleaning method 2. As a result, particles can be more easily removed from the central edge ring 38 m and its surroundings, and the cleaning effect can be further enhanced.
- the central edge ring 38 m may be either raised or lowered.
- the central edge ring 38 m is a movable part that is vertically moved.
- the present disclosure is not limited thereto, and at least one of the inner edge ring 38 i and the outer edge ring 38 o may be used as a movable part that is vertically moved by the moving mechanism 200 .
- the N 2 gas is purged while vertically moving the central edge ring 38 m .
- the cleaning gas is not limited to N 2 gas, and may be an inert gas such as Ar gas, He gas or the like.
- FIG. 4 is a flowchart showing an example of the cleaning method 1 and wafer processing according to the embodiment.
- FIG. 5 is a flowchart showing an example of the cleaning method 2 and wafer processing according to the embodiment.
- FIG. 6 is a flowchart showing an example of the cleaning method 3 and wafer processing according to the embodiment.
- the processes shown in FIGS. 4 to 6 are controlled by the control unit 74 .
- the processes shown in FIGS. 4 to 6 may be started after completion of waferless dry cleaning (WLDC), between lots, or for every wafer W.
- WLDC waferless dry cleaning
- the control unit 74 evacuates the processing chamber 10 (step S 10 ).
- the control unit 74 starts the vertical movement of the central edge ring 38 m (step S 12 ).
- the control unit 74 starts the application of a DC voltage (HV) to the electrode 36 a of the electrostatic chuck 36 (step S 14 ).
- HV DC voltage
- control unit 74 determines whether or not a predetermined time has elapsed (step S 15 ). The control unit 74 waits until a predetermined time elapses. When it is determined that the predetermined time has elapsed, the control unit 74 stops the application of a DC voltage (HV) to the electrode 36 a (step S 16 ). Next, the control unit 74 stops the vertical movement of the central edge ring 38 m (step S 18 ).
- HV DC voltage
- control unit 74 loads a wafer W into the processing chamber 10 (step S 20 ), executes predetermined processing such as etching or the like on the wafer W (step S 22 ), and completes this processing.
- the processed wafer W is unloaded and the next wafer W is processed.
- control unit 74 evacuates the processing chamber 10 (step S 10 ).
- control unit 74 starts vertical movement of the central edge ring 38 m (step S 12 ).
- control unit 74 starts introduction of N 2 gas (step S 30 ).
- control unit 74 purges the N 2 gas using the gas exhaust unit 26 (step S 32 ).
- control unit 74 determines whether or not a predetermined time has elapsed (step S 15 ). The control unit 74 waits until a predetermined time elapses. When it is determined that the predetermined time has elapsed, the introduction of the N 2 gas is stopped (step S 34 ). Next, the control unit 74 stops the vertical movement of the central edge ring 38 m (step S 18 ).
- control unit 74 loads a wafer W into the processing chamber 10 (step S 20 ), executes predetermined processing such as etching or the like on the wafer W (step S 22 ), and completes the processing.
- the processed wafer W is unloaded and the next wafer W is processed.
- the particles floating at the central edge ring 38 m and its surroundings can flow by the viscous force of N 2 gas supplied for purging while vertically moving the central edge ring 38 m . Therefore, it is possible to remove the particles from the central edge ring 38 m and its surroundings. Accordingly, the generation of particles and defects can be suppressed during the processing of the wafer W, which makes it possible to increase the yield of the wafer W and improve the productivity.
- control unit 74 evacuates the processing chamber 10 (step S 10 ).
- control unit 74 starts the vertical movement of the central edge ring 38 m (step S 12 ).
- control unit 74 starts the application of the DC voltage HV to the electrode 36 a of the electrostatic chuck 36 (step S 14 ).
- control unit 74 starts introduction of N 2 gas (step S 30 ).
- control unit 74 purges the N 2 gas using the gas exhaust unit 26 (step S 32 ).
- control unit 74 determines whether or not a predetermined time has elapsed (step S 15 ). The control unit 74 waits until a predetermined time elapses. When it is determined that the predetermined time has elapsed, the control unit 74 stops the introduction of the N 2 gas (step S 34 ). Next, the control unit 74 stops the application of the DC voltage HV (step S 16 ), and then stops the vertical movement of the central edge ring 38 m (step S 18 ).
- control unit 74 loads a wafer W into the processing chamber 10 (step S 20 ), executes predetermined processing such as etching or the like on the wafer W (step S 22 ), and completes the processing.
- the processed wafer W is unloaded and the next wafer W is processed.
- the central edge ring 38 m is vertically moved, N 2 gas is purged, and a DC voltage is applied to the electrostatic chuck 36 . Accordingly, it is possible to more effectively remove the particles in the processing chamber 10 , including the particles on the bottom surface of the central edge ring 38 m and its surroundings.
- the central edge ring 38 m can be used not only for the above-described cleaning process but also for sheath control during the processing of the wafer W. Accordingly, it is possible to control the process characteristics such as the etching rate of the edge portion of the wafer W and the like.
- the particles can be removed from the edge ring and its surroundings.
- the cleaning method and the substrate processing apparatus according to the embodiment of the present disclosure are examples in all respects and are not limiting.
- the above-described embodiments can be variously changed and modified without departing from the scope and spirit of the appended claims.
- the contents described in the above-described embodiments may include other configurations without contradicting each other and may be combined without contradicting each other.
- the substrate processing apparatus of the present disclosure can also be applied to capacitively coupled plasma (CCP), inductively coupled plasma (ICP), a radial line slot antenna, electron cyclotron resonance plasma (ECR), and helicon wave plasma (HWP).
- CCP capacitively coupled plasma
- ICP inductively coupled plasma
- ECR electron cyclotron resonance plasma
- HWP helicon wave plasma
- the wafer W was described as an example of the substrate.
- the substrate is not limited thereto and may be various substrates used for an Liquid Crystal Display (LCD), a Flat Panel Display (FPD), a CD substrate, a printed circuit board, and the like.
- LCD Liquid Crystal Display
- FPD Flat Panel Display
- CD substrate a printed circuit board, and the like.
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Abstract
A method is for cleaning an edge ring. The edge ring includes an inner edge ring provided near a substrate mounted on an electrostatic chuck in a processing chamber, a central edge ring that is provided at an outer side of the inner edge ring and vertically movable by a moving mechanism, and an outer edge ring provided at an outer side of the central edge ring. The method includes applying a direct current voltage to the electrostatic chuck, and moving the central edge ring upward or downward.
Description
- This application claims priority to Japanese Patent Application No. 2018-093308, filed on May 14, 2018, the entire contents of which are incorporated herein by reference.
- The present disclosure relates to a cleaning method and a substrate processing apparatus.
- Conventionally, it has been proposed to generate convection by supplying a large amount of gas into a processing chamber and increasing pressure, peel off particles adhered to the inner surface of the processing chamber by the convection, and remove the peeled-off particles by viscous force of the gas (see, e.g., Japanese Patent Application Publication No. 2005-243915).
- However, there are movable parts in the processing chamber, and it may be difficult to remove particles from the bottom surfaces of the movable parts or from the gap between the movable parts and non-movable parts.
- The present disclosure provides a technique for removing particles from an edge ring and its neighboring components.
- In accordance with an aspect of the present disclosure, there is provided a method for cleaning an edge ring including an inner edge ring provided near a substrate mounted on an electrostatic chuck in a processing chamber, a central edge ring that is provided at an outer side of the inner edge ring and vertically movable by a moving mechanism, and an outer edge ring provided at an outer side of the central edge ring, including: applying a direct current voltage to the electrostatic chuck; and moving the central edge ring upward or downward.
- The objects and features of the present disclosure will become apparent from the following description of embodiments, given in conjunction with the accompanying drawings, in which:
-
FIG. 1 is a longitudinal cross-sectional view showing an example of a substrate processing apparatus according to an embodiment; -
FIG. 2 shows an example of an edge ring and an example of a moving mechanism according to an embodiment; -
FIGS. 3A to 3C show exemplary states of particles in an embodiment; -
FIG. 4 is a flowchart showing an example of a cleaning process using a cleaning method 1 and wafer processing according to an embodiment; -
FIG. 5 is a flowchart showing an example of a cleaning process using a cleaning method 2 and wafer processing according to the embodiment; and -
FIG. 6 is a flowchart showing an example of a cleaning process using a cleaning method 3 and wafer processing according to the embodiment. - Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Like reference numerals will be given to like or corresponding parts throughout the drawings, and redundant description thereof will be omitted.
- First, an example of a configuration of a
substrate processing apparatus 5 according to an embodiment of the present disclosure will be described with reference toFIG. 1 .FIG. 1 shows an example of a configuration of thesubstrate processing apparatus 5 according to the embodiment. In the embodiment, a capacitively coupled parallel plate plasma processing apparatus will be described as an example of thesubstrate processing apparatus 5. - The
substrate processing apparatus 5 includes aprocessing chamber 10 that is a cylindrical vacuum container made of a metal, e.g., aluminum, stainless steel, or the like. In theprocessing chamber 10, plasma processing is performed. Theprocessing chamber 10 is grounded. - A disc-shaped mounting table 12, which serves as a substrate holding table and a lower electrode, is provided at a lower central portion in the
processing chamber 10 for mounting thereon a wafer W. The mounting table 12 includes anelectrostatic chuck 36 and abase 12 a. Thebase 12 a is supported by a conductive cylindrical supportingportion 16 that is made of, e.g., aluminum, and extends vertically upward from a bottom portion of theprocessing chamber 10, and ahousing 100 adjacent to the inside thereof. - An annular
gas exhaust passage 18 is formed between the conductive cylindrical supportingportion 16 and a sidewall of theprocessing chamber 10. Anannular baffle plate 20 is attached to an upper portion or an inlet of thegas exhaust passage 18. Agas exhaust port 22 is provided at a bottom portion of thegas exhaust passage 18. In order to make the flow of the gas in theprocessing chamber 10 symmetrically uniform with respect to the wafer W on the mounting table 12, it is preferable to provide a plurality ofgas exhaust ports 22 at equal intervals in a circumferential direction. - A gas exhaust unit 26 is connected to each of the
gas exhaust ports 22 through agas exhaust line 24. The gas exhaust unit 26 includes a vacuum pump such as a turbo molecular pump and reduces the pressure in a plasma generation space S formed between the mounting table 12 and theshower head 51 in theprocessing chamber 10 to a desired vacuum level. Agate valve 28 for opening and closing a loading/unloadingport 27 for the wafer W is attached to the outer side of the sidewall of theprocessing chamber 10. - A second high
frequency power supply 30 is electrically connected to the mounting table 12 through amatching unit 32 and apower supply line 34. The second highfrequency power supply 30 can output a high frequency power LF having a second frequency (e.g., 13.56 MHz or the like) suitable for controlling the energy of ions attracted to the wafer W at a variable power. The matchingunit 32 has a reactance-variable matching circuit for matching an impedance of the second highfrequency power supply 30 side and an impedance of a load (plasma or the like) side. - The
electrostatic chuck 36 for holding the wafer W by an electrostatic attractive force is provided on an upper surface of thebase 12 a. Theelectrostatic chuck 36 includes anelectrode 36 a made of a conductive film, and theelectrode 36 a is embedded between twoinsulating films 36 b. ADC power supply 40 is electrically connected to theelectrode 36 a through aswitch 42 and a coatedline 43. The wafer W is attracted to and held on theelectrostatic chuck 36 by an electrostatic force generated by a DC voltage (HV) supplied from theDC power supply 40. - An annular
coolant flow path 44 extending in a circumferential direction is provided in the mounting table 12. A coolant having a predetermined temperature, e.g., cooling water cw, is supplied from a chiller unit to thecoolant flow path 44 throughpipes electrostatic chuck 36 is controlled by the temperature of the coolant. A heater may be provided in the mounting table 12 and may control the temperature of the wafer W with the temperature of the heater and the coolant. - A heat transfer gas (e.g., He gas or the like) from a heat transfer gas supply unit is supplied to a gap between an upper surface of the
electrostatic chuck 36 and a backside of the wafer W through agas supply line 50. The heat transfer gas has a function of improving the heat transfer efficiency between the upper surface of theelectrostatic chuck 36 and the backside of the wafer W. The mounting table 12 is provided with a pusher pin that is vertically movable through the mounting table 12 to load and unload the wafer W and a lifting mechanism thereof. - A
shower head 51 is provided at an opening formed at a ceiling portion of theprocessing chamber 10. Theshower head 51 is attached to the opening formed at the ceiling portion of theprocessing chamber 10 via ashield ring 54 that covers an outer peripheral portion of theshower head 51, and blocks the ceiling portion. Theshower head 51 may be made of aluminum or silicon. Theshower head 51 also serves as an upper electrode facing the mounting table 12. - A
gas inlet port 56 for introducing a gas is formed at theshower head 51. Theshower head 51 has therein adiffusion space 58 extending from thegas inlet port 56. The gas supplied from agas supply source 66 is diffused to thediffusion space 58 through thegas inlet port 56 and then introduced into the plasma generation space S through multiplegas supply holes 52. - A first high
frequency power supply 57 is electrically connected to theshower head 51 through amatching unit 59 and apower supply line 60. The first highfrequency power supply 57, in outputting a high frequency power HF suitable for plasma generation, can output a high frequency power HF having a first frequency that is higher (e.g., 40 MHz or the like) than the second frequency and can generate plasma by high frequency discharge at a variable power. The matchingunit 59 has a reactance-variable matching circuit for matching an impedance of the first highfrequency power supply 57 side and the impedance of the load (plasma or the like) side. - A
control unit 74 includes, e.g., a microcomputer, and controls the operations of the respective components of thesubstrate processing apparatus 5 and the operation of the entire apparatus. The respective components of thesubstrate processing apparatus 5 include the gas exhaust unit 26, the first highfrequency power supply 57, the second highfrequency power supply 30, thematching units switches gas supply source 66, the chiller unit, the heat transfer gas supply unit, and the like. - In the
substrate processing apparatus 5, in order to perform plasma processing, e.g., etching or the like, on various types of wafers W, first, thegate valve 28 is opened and the wafer W is loaded into theprocessing chamber 10 through the loading/unloadingport 27. The wafer W on the pusher pin is moved and mounted on theelectrostatic chuck 36 by moving the pusher pin. After thegate valve 28 is closed, a predetermined gas is introduced into theprocessing chamber 10 from thegas supply source 66 at a predetermined flow rate and a predetermined flow rate ratio, and the gas exhaust unit 26 reduces the pressure in theprocessing chamber 10 to a predetermined set value. Then, the first highfrequency power supply 57 is switched on to output the high frequency power HF for plasma generation at a predetermined level. The high frequency power HF for plasma generation is applied to theshower head 51 via thematching unit 59 and thepower supply line 60. - On the other hand, in the case of applying the high frequency power LF for ion attraction control, the second high
frequency power supply 30 is switched on to output the high frequency power LF at a predetermined level. The high frequency power LF is applied to the mounting table 12 via thematching unit 32 and thepower supply line 34. A heat transfer gas is supplied to a gap between the upper surface of theelectrostatic chuck 36 and the backside of the wafer W, and theswitch 42 is switched on to apply a DC voltage from theDC power supply 40 to theelectrode 36 a of theelectrostatic chuck 36. The heat transfer gas is confined to the backside of the wafer W by the electrostatic attractive force. - An
edge ring 38 is provided at the vicinity of the wafer W that is the outer peripheral side of the mounting table 12 to annularly surround the outer edge of the wafer W. Theedge ring 38 is divided into aninner edge ring 38 i, acentral edge ring 38 m, and anouter edge ring 38 o. Anelectrode 83 may be buried in theouter edge ring 38 o, and theDC power supply 84 may be electrically connected to theelectrode 83 through theswitch 85 and acoated line 86. Accordingly, a DC voltage can be applied to theouter edge ring 38 o. - A
DC power supply 81 may be electrically connected to theshower head 51 through theswitch 82 and acoated line 87. Accordingly, a DC voltage can be applied to theshower head 51. - Among the
edge ring 38 divided into three parts, theinner edge ring 38 i is closest to the wafer W mounted on the mounting table 12 in the processing chamber. Thecentral edge ring 38 m is provided at the outer side of theinner edge ring 38 i and is vertically movable by a movingmechanism 200. Theouter edge ring 38 o is provided at the outer side of thecentral edge ring 38 m. - The moving
mechanism 200 vertically moves thecentral edge ring 38 m. The movingmechanism 200 has alift pin 102. Thelift pin 102 is vertically moved via amember 104 a and a bearingportion 105 by power of apiezoelectric actuator 101. Accordingly, a connectingportion 103 is vertically moved, and thecentral edge ring 38 m connected to the connectingportion 103 is vertically moved. - Next, the configuration of the
edge ring 38 and its neighboring parts will be described in detail with reference toFIG. 2 . -
FIG. 2 shows an example of an enlarged longitudinal cross section of theedge ring 38 and its neighboring parts.FIG. 2 shows theedge ring 38, the movingmechanism 200 and thepiezoelectric actuator 101 according to an embodiment. - The
inner edge ring 38 i is provided near the outer periphery of the wafer W to surround the wafer W at the bottom portion of the wafer W. Theinner edge ring 38 i is the innermost member of theedge ring 38. Thecentral edge ring 38 m is provided at the outer side of theinner edge ring 38 i to surround theinner edge ring 38 i. Theouter edge ring 38 o is provided at the outer side of thecentral edge ring 38 m. Theouter edge ring 38 o is the outermost member of theedge ring 38. Theinner edge ring 38 i is fixed to the upper surface of theelectrostatic chuck 36 via a heat transfer sheet 39 i. Thecentral edge ring 38 m is vertically movable by the movingmechanism 200. Theouter edge ring 38 o is fixed to the upper surface of theelectrostatic chuck 36 via a heat transfer sheet. - The
central edge ring 38 m has anannular portion 38 m 1 surrounding the peripheral portion of the wafer W and threetab portions 38 m 2. Thetab portions 38 m 2 are disposed at an equal interval on the outer peripheral side of theannular portion 38 m 1. Thetap portions 38 m 2 are rectangular members projecting from the outer peripheral side of theannular portion 38 m 1. Theannular portion 38 m 1 and theinner edge ring 38 i have an L-shaped longitudinal cross section. In a state where the step portion of theannular portion 38 m 1 is making contact with the step portion of theinner edge ring 38 i, when thecentral edge ring 38 m is lifted upward, the step portion of theannular portion 38 m 1 is separated from the step portion of theinner edge ring 38 i. - The
tab portions 38 m 2 of thecentral edge ring 38 m are connected to the annular connectingportion 103. - The connecting
portion 103 is vertically movable in aspace 16 a provided in the conductivecylindrical supporting portion 16. - The
housing 100 is made of an insulator such as alumina or the like. Thehousing 100 has a side portion and a bottom portion disposed close to the conductivecylindrical supporting portion 16 inside the conductivecylindrical supporting portion 16. Arecess 100 a is formed on an inner lower side of thehousing 100. A movingmechanism 200 is provided in therecess 100 a of thehousing 100. The movingmechanism 200 vertically moves thecentral edge ring 38 m and includes thelift pin 102 and the bearingportion 105. - The
lift pin 102 extends through a pin hole that penetrates thehousing 100 and the mounting table 12. Thelift pin 102 is brought into contact with a bottom surface of the connectingportion 103 in thespace 16 a formed in the conductivecylindrical supporting portion 16. The bearingportion 105 is fitted to themember 104 a provided in thehousing 100. An O-ring 111 is provided at the pin hole to separate a vacuum space and an atmospheric space. - The lower end of the
lift pin 102 is fitted into arecess 105 a formed at a leading end of the bearingportion 105. When the bearingportion 105 is vertically moved via themember 104 a by the positioning of thepiezoelectric actuator 101, thelift pin 102 is vertically moved, thereby raising or lowering the bottom surface of the connectingportion 103. Accordingly, thecentral edge ring 38 m is vertically moved via the connectingportion 103. - The upper end of the
piezoelectric actuator 101 is fixed to themember 104 a by ascrew 104 c, and a lower end of thepiezoelectric actuator 101 is fixed to amember 104 b by ascrew 104 d. Accordingly, thepiezoelectric actuator 101 is fixed to thehousing 100 and interposed between themembers - The
piezoelectric actuator 101 is a positioning element utilizing a piezoelectric effect and can perform positioning with a resolution of about 0.006 mm (6 μm). Thelift pin 102 is vertically moved depending on the vertical displacement of thepiezoelectric actuator 101. Accordingly, thecentral edge ring 38 m is moved by a predetermined height with 0.006 mm as the minimum unit. - The
piezoelectric actuators 101 are provided one-to-one with the lift pins 102 in the inner space of thehousing 100 positioned below the lift pins 102. In other words, three movingmechanisms 200 and threepiezoelectric actuators 101 are provided one-to-one with the lift pins 102 arranged at three positions inside thehousing 100. Themembers piezoelectric actuators 101 withscrews piezoelectric actuators 101 are connected to each other by themembers piezoelectric actuator 101 is an example of a driving unit. - The lift pins 102 are provided at three locations at equal intervals in the circumferential direction of the
central edge ring 38 m. With this configuration, the lift pins 102 lift thecentral edge ring 38 m upward from the three positions to a predetermined height via the annular connectingportion 103. - On a bottom surface of the
outer edge ring 38 o and above thetab portion 38 m 2 of thecentral edge ring 38 m, a recess having a width greater than that of thetab portion 38 m 2 is formed. When thecentral edge ring 38 m is moved to the uppermost position by lifting the lift pins 102 upward, thetab portions 38 m 2 are accommodated in the recess. This makes it possible to lift thecentral edge ring 38 m upward while fixing theouter edge ring 38 o. - As described above, in this configuration, the mounting table 12 and the
electrostatic chuck 36 are supported by thehousing 100, and the movingmechanism 200 and the driving unit are attached to thehousing 100. Accordingly, only thecentral edge ring 38 m can be vertically moved using the conventionalelectrostatic chuck 36 without design changes of theelectrostatic chuck 36. - Further, in the present embodiment, a predetermined space is provided between the upper surface of the
electrostatic chuck 36 and the bottom surface of thecentral edge ring 38 m, and thecentral edge ring 38 m can be moved not only in the upward direction but also in the downward direction. Accordingly, thecentral edge ring 38 m can be moved not only in the upward direction but also in the downward direction within a predetermined space by a predetermined height before and during the processing of the wafer W. By moving thecentral edge ring 38 m not only in the upward direction but also in the downward direction, the control range of the sheath can be expanded. - However, the driving unit is not limited to the
piezoelectric actuator 101, and a motor capable of controlling the positioning with a resolution of about 0.006 mm may be used. In addition, there may be provided a single driving unit or a plurality of driving units. Further, the driving units may share a motor for vertically moving the pusher pins for lifting the wafer W. In that case, a mechanism for switching the power of the motor by using a gear and a power switching unit and transferring the switched power to the pusher pin for the wafer W and the lift pins 102 for thecentral edge ring 38 m, and a mechanism for controlling the vertical movement of the lift pins 102 with the resolution of about 0.006 mm are required. Since, however, thecentral edge ring 38 m disposed on the outer periphery of a 300 mm wafer W has a diameter of about 310 mm, it is preferable to provide a separate driving unit for eachlift pin 102 as in the present embodiment. - The
control unit 74 may determine the vertical displacement of thepiezoelectric actuator 101 based on the consumption amount of thecentral edge ring 38 m. Thecontrol unit 74 may determine the vertical displacement of thepiezoelectric actuator 101 based on the processing conditions of the wafer processing and the cleaning process regardless of the consumption amount of thecentral edge ring 38 m. - Further, as will be described later, in the present embodiment, the
central edge ring 38 m is vertically moved during the cleaning process. Accordingly, it is possible to effectively remove particles adhered to the bottom surface of thecentral edge ring 38 m and the periphery of thecentral edge ring 38 m. - Tests were conducted to find positions where particles tend to be accumulated in the
processing chamber 10 having theedge ring 38 configured as described above. The test results will be described with reference toFIGS. 3A to 3C , showing exemplary states of particles in an embodiment and a comparative example. -
FIG. 3A shows positions where particles tend to be accumulated in the case of performing plasma processing by vertically moving thecentral edge ring 38 m. As indicated by R, particles tend to be accumulated on the entire surface of theinner edge ring 38 i and on the inner surface and the bottom surface of thecentral edge ring 38 m. - Referring to
FIG. 3B , in a state where thecentral edge ring 38 m has been lowered, a large amount of N2 gas was supplied into theprocessing chamber 10 and the pressure was increased to generate convection. Then, a cleaning process was performed by peeling the particles adhered to the inner surface of the processing chamber by the convection and removing the peeled-off particles by viscous force of the N2 gas. - As a result, it was possible to remove the particles from the outer peripheral sidewall of the wafer W indicated by A, the sidewall of the
electrostatic chuck 36 below the wafer W, and the inner surfaces of theinner edge ring 38 i and thecentral edge ring 38 m. However, it was not possible to peel off the particles from the upper surface and the outer surface of theinner edge ring 38 i, and the inner surface and the bottom surface of thecentral edge ring 38 m that are close to theinner edge ring 38 i, as indicated by R, which shows that the cleaning was insufficient. - A cleaning method 1 according to an embodiment will be described. In the cleaning method 1, first, a DC voltage is applied to the
electrode 36 a of theelectrostatic chuck 36. Then, thecentral edge ring 38 m is vertically moved. As a result, it is possible to remove the particles from all the positions where particles tend to accumulate inFIG. 3A , i.e., the outer peripheral sidewall of the wafer W, the sidewall of theelectrostatic chuck 36 below the wafer W, the entire surface of theinner edge ring 38 i, and the entire bottom surface of thecentral edge ring 38 m, as indicated by A inFIG. 3C . - In the cleaning method 1, the DC voltage is applied to the
electrode 36 a and, thus, an electric field is generated between theedge ring 38 and theelectrostatic chuck 36. If thecentral edge ring 38 m is vertically moved in that state, a space between thecentral edge ring 38 m, theinner edge ring 38 i, and theouter edge ring 38 o is changed. Accordingly, the direction or the intensity of the electric field generated in the space can be changed. In that case, the direction or the intensity of the electric field is constantly changed due to the changes in the space near thecentral edge ring 38 m by raising or lowering thecentral edge ring 38 m. As a consequence, particles are accumulated near thecentral edge ring 38 m and its neighboring parts, and the cleaning effect can be enhanced. As a result, as can be seen fromFIG. 3C , it is possible to peel-off and remove the particles from the bottom surface of thecentral edge ring 38 m and its neighboring parts, which are not easily removable. - The DC voltage applied to the
electrode 36 a of theelectrostatic chuck 36 may be a positive voltage or a negative voltage. Alternatively, a positive voltage and a negative voltage may be alternately applied. By applying a positive DC voltage, negatively charged particles are likely to be peeled off. By applying a negative DC voltage, positively charged particles are likely to be peeled off. The polarity of the DC voltage applied to theelectrode 36 a may be controlled depending on types of deposits adhered to the peripheral portion of thecentral edge ring 38 m. In the case of alternately applying a positive DC voltage and a negative DC voltage, positively charged particles and negatively charged particles tend to be peeled off. - In the case of applying a DC voltage to the electrode of the
outer edge ring 38 o and vertically moving thecentral edge ring 38 m, the same cleaning effect as that obtained in the case of applying the DC voltage to theelectrode 36 a of theelectrostatic chuck 36 and vertically moving thecentral edge ring 38 m can be obtained. It is also possible to embed theelectrode 83 in theinner edge ring 38 i instead of theouter edge ring 38 o, apply a DC voltage to theelectrode 83, and vertically move thecentral edge ring 38 m. - It is also possible to apply a DC voltage to the
shower head 51 and vertically move thecentral edge ring 38 m. In other words, the effect of the cleaning method 1 can be obtained by applying a DC voltage to at least one of theelectrode 36 a, theelectrode 83, and theshower head 51, and vertically moving thecentral edge ring 38 m. In a cleaning method 3 to be described below, it is possible to apply a DC voltage to at least one of theelectrode 36 a, theelectrode 83, and theshower head 51, and vertically move thecentral edge ring 38 m. - Next, the cleaning method 2 according to an embodiment will be described. In the cleaning method 2, first, a cleaning gas is supplied to a position below the
central edge ring 38 m. Then, thecentral edge ring 38 m is vertically moved. As a result, as can be seen fromFIG. 3C , it is possible to remove particles from all the surfaces of the positions where particles tend to accumulate inFIG. 3A . - In the cleaning method 2, N2 gas is supplied as an example of the cleaning gas. If the
central edge ring 38 m is raised, the N2 gas flows toward the position below thecentral edge ring 38 m. If thecentral edge ring 38 m is lowered in that state, the peel-off particles and the N2 gas flow from the position below thecentral edge ring 38 m toward the side surface thereof. - Therefore, in the cleaning method 2, the particles floating at the
central edge ring 38 m that is a movable part of theedge ring 38 and its surroundings can flow by the viscous force of the N2 gas. In that case, the gas flow rate at thecentral edge ring 38 m and its surroundings constantly changes during the cleaning by raising or lowering thecentral edge ring 38 m. As a result, particles can be easily removed from thecentral edge ring 38 m and its surroundings, and the cleaning effect can be further enhanced. - In the case of performing the cleaning method 2 according to the embodiment, the
substrate processing apparatus 5 does not necessarily require theelectrostatic chuck 36. - Finally, a cleaning method 3 according to an embodiment will be described. The cleaning method 3 according to the embodiment is combination of the cleaning methods 1 and 2 according to the embodiment.
- The cleaning method 3 can provide both effects of the cleaning methods 1 and 2. For example, positive and negative charged particles can be removed using an electric field generated by the cleaning method 1, and neutral particles can be removed using a flow of N2 gas supplied by the cleaning method 2. As a result, particles can be more easily removed from the
central edge ring 38 m and its surroundings, and the cleaning effect can be further enhanced. - In the cleaning methods 1 to 3, it is not necessary to raise and lower the
central edge ring 38 m. Thecentral edge ring 38 m may be either raised or lowered. - In the cleaning methods 1 to 3, the
central edge ring 38 m is a movable part that is vertically moved. However, the present disclosure is not limited thereto, and at least one of theinner edge ring 38 i and theouter edge ring 38 o may be used as a movable part that is vertically moved by the movingmechanism 200. - In the cleaning methods 2 and 3, the N2 gas is purged while vertically moving the
central edge ring 38 m. However, the cleaning gas is not limited to N2 gas, and may be an inert gas such as Ar gas, He gas or the like. At this time, it is preferable to supply a large flow rate of cleaning gas such as N2 gas or the like into theprocessing chamber 10 and increase the pressure to generate convection, and then peel off particles adhered to the inner surface of theprocessing chamber 10 by the convection. - Finally, an example of cleaning using the cleaning methods 1 to 3 and wafer processing according to the embodiment will be described with reference to
FIGS. 4 to 6 .FIG. 4 is a flowchart showing an example of the cleaning method 1 and wafer processing according to the embodiment.FIG. 5 is a flowchart showing an example of the cleaning method 2 and wafer processing according to the embodiment.FIG. 6 is a flowchart showing an example of the cleaning method 3 and wafer processing according to the embodiment. The processes shown inFIGS. 4 to 6 are controlled by thecontrol unit 74. The processes shown inFIGS. 4 to 6 may be started after completion of waferless dry cleaning (WLDC), between lots, or for every wafer W. - First, the cleaning method 1 and the wafer processing will be described. When the process shown in
FIG. 4 is started, thecontrol unit 74 evacuates the processing chamber 10 (step S10). Next, thecontrol unit 74 starts the vertical movement of thecentral edge ring 38 m (step S12). Next, thecontrol unit 74 starts the application of a DC voltage (HV) to theelectrode 36 a of the electrostatic chuck 36 (step S14). - Next, the
control unit 74 determines whether or not a predetermined time has elapsed (step S15). Thecontrol unit 74 waits until a predetermined time elapses. When it is determined that the predetermined time has elapsed, thecontrol unit 74 stops the application of a DC voltage (HV) to theelectrode 36 a (step S16). Next, thecontrol unit 74 stops the vertical movement of thecentral edge ring 38 m (step S18). - Next, the
control unit 74 loads a wafer W into the processing chamber 10 (step S20), executes predetermined processing such as etching or the like on the wafer W (step S22), and completes this processing. The processed wafer W is unloaded and the next wafer W is processed. - In the cleaning process, it is possible to change the intensity and the direction of the electric field around the
central edge ring 38 m by applying a DC voltage to theelectrostatic chuck 36 while vertically moving thecentral edge ring 38 m. Therefore, it is possible to remove the particles from thecentral edge ring 38 m and its surroundings. Accordingly, the generation of particles and defects can be suppressed during the processing of the wafer W, which makes it possible to increase the yield of the wafer W and improve the productivity. - Next, the cleaning method 2 and wafer processing will be described. When the process shown in
FIG. 5 is started, thecontrol unit 74 evacuates the processing chamber 10 (step S10). - Next, the
control unit 74 starts vertical movement of thecentral edge ring 38 m (step S12). Next, thecontrol unit 74 starts introduction of N2 gas (step S30). Next, thecontrol unit 74 purges the N2 gas using the gas exhaust unit 26 (step S32). - Next, the
control unit 74 determines whether or not a predetermined time has elapsed (step S15). Thecontrol unit 74 waits until a predetermined time elapses. When it is determined that the predetermined time has elapsed, the introduction of the N2 gas is stopped (step S34). Next, thecontrol unit 74 stops the vertical movement of thecentral edge ring 38 m (step S18). - Next, the
control unit 74 loads a wafer W into the processing chamber 10 (step S20), executes predetermined processing such as etching or the like on the wafer W (step S22), and completes the processing. The processed wafer W is unloaded and the next wafer W is processed. - In the cleaning process, the particles floating at the
central edge ring 38 m and its surroundings can flow by the viscous force of N2 gas supplied for purging while vertically moving thecentral edge ring 38 m. Therefore, it is possible to remove the particles from thecentral edge ring 38 m and its surroundings. Accordingly, the generation of particles and defects can be suppressed during the processing of the wafer W, which makes it possible to increase the yield of the wafer W and improve the productivity. - Next, the cleaning method 3 and the wafer processing will be described. When the process shown in
FIG. 6 is started, thecontrol unit 74 evacuates the processing chamber 10 (step S10). - Next, the
control unit 74 starts the vertical movement of thecentral edge ring 38 m (step S12). Next, thecontrol unit 74 starts the application of the DC voltage HV to theelectrode 36 a of the electrostatic chuck 36 (step S14). Next, thecontrol unit 74 starts introduction of N2 gas (step S30). Next, thecontrol unit 74 purges the N2 gas using the gas exhaust unit 26 (step S32). - Next, the
control unit 74 determines whether or not a predetermined time has elapsed (step S15). Thecontrol unit 74 waits until a predetermined time elapses. When it is determined that the predetermined time has elapsed, thecontrol unit 74 stops the introduction of the N2 gas (step S34). Next, thecontrol unit 74 stops the application of the DC voltage HV (step S16), and then stops the vertical movement of thecentral edge ring 38 m (step S18). - Next, the
control unit 74 loads a wafer W into the processing chamber 10 (step S20), executes predetermined processing such as etching or the like on the wafer W (step S22), and completes the processing. The processed wafer W is unloaded and the next wafer W is processed. In the cleaning process, thecentral edge ring 38 m is vertically moved, N2 gas is purged, and a DC voltage is applied to theelectrostatic chuck 36. Accordingly, it is possible to more effectively remove the particles in theprocessing chamber 10, including the particles on the bottom surface of thecentral edge ring 38 m and its surroundings. - The
central edge ring 38 m can be used not only for the above-described cleaning process but also for sheath control during the processing of the wafer W. Accordingly, it is possible to control the process characteristics such as the etching rate of the edge portion of the wafer W and the like. - As described above, in accordance with the cleaning process performed by the substrate processing apparatus of the present embodiment, the particles can be removed from the edge ring and its surroundings.
- The cleaning method and the substrate processing apparatus according to the embodiment of the present disclosure are examples in all respects and are not limiting. The above-described embodiments can be variously changed and modified without departing from the scope and spirit of the appended claims. The contents described in the above-described embodiments may include other configurations without contradicting each other and may be combined without contradicting each other.
- The substrate processing apparatus of the present disclosure can also be applied to capacitively coupled plasma (CCP), inductively coupled plasma (ICP), a radial line slot antenna, electron cyclotron resonance plasma (ECR), and helicon wave plasma (HWP).
- In this specification, the wafer W was described as an example of the substrate. However, the substrate is not limited thereto and may be various substrates used for an Liquid Crystal Display (LCD), a Flat Panel Display (FPD), a CD substrate, a printed circuit board, and the like.
- While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the disclosures. Indeed, the embodiments described herein may be embodied in a variety of other forms. Furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made departing from the spirit of the disclosures. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the disclosures.
Claims (14)
1-16 (canceled)
17. A substrate processing apparatus comprising:
a plasma processing chamber;
an electrostatic chuck disposed in the chamber;
a ring structure including an inner edge ring disposed near a substrate on the electrostatic chuck, a central edge ring disposed so as to surround the inner edge ring, and an outer edge ring disposed so as to surround the central edge ring;
a DC power supply configured to apply a direct current voltage to the electrostatic chuck;
a moving mechanism configured to vertically move the central edge ring; and
a controller configured to control the DC power supply and the moving mechanism to vertically move the central edge ring while applying the direct current voltage to the electrostatic chuck.
18. The substrate processing apparatus of claim 17 , wherein the controller is further configured to control supplying a cleaning gas to a position below the central edge ring.
19. The substrate processing apparatus of claim 18 , wherein the cleaning gas includes an inert gas.
20. The substrate processing apparatus of claim 17 , wherein the controller is further configured to control the DC power supply to alternately apply a positive direct current voltage and a negative direct current voltage to the electrostatic chuck.
21. The substrate processing apparatus of claim 17 , wherein the controller is further configured to control a polarity of the direct current voltage depending on types of deposits adhered to the central edge ring.
22. The substrate processing apparatus of claim 17 , wherein at least one of the inner edge ring and the outer edge ring has an electrode, and
wherein the controller is further configured to control applying a direct current voltage to the electrode.
23. The substrate processing apparatus of claim 17 , further comprising:
a shower head provided at a position where the substrate faces,
wherein at least one of the inner edge ring and the outer edge ring has an electrode, and
wherein the controller is further configured to control applying a direct current voltage to at least one of the electrode and the shower head.
24. The substrate processing apparatus of claim 17 , wherein the inner edge ring and the outer edge ring are vertically movable, and
wherein the controller is further configured to control the moving mechanism to vertically move at least one of the inner edge ring and the outer edge ring.
25. The substrate processing apparatus of claim 17 , wherein the controller is further configured to control, after applying the direct current voltage, determining whether or not a predetermined time has elapsed since the direct current voltage is applied to the electrostatic chuck.
26. The substrate processing apparatus of claim 17 , wherein a vertical displacement of the central edge ring is determined based on a consumption amount of the central edge ring.
27. The substrate processing apparatus of claim 17 , wherein the controller is configured to remove particles in a space between the central edge ring and the inner edge ring by vertically moving the central edge ring while applying the direct current voltage to the electrostatic chuck.
28. The substrate processing apparatus of claim 27 , wherein the controller is configured to change the space and a direction or an intensity of an electric field in the space by vertically moving the central edge ring while applying the direct current voltage to the electrostatic chuck.
29. The substrate processing apparatus of claim 28 , wherein the controller is configured to constantly change the direction or the intensity of the electric field in the space by vertically moving the central edge ring while applying the direct current voltage to the electrostatic chuck.
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JP2018093308A JP7122864B2 (en) | 2018-05-14 | 2018-05-14 | CLEANING METHOD AND SUBSTRATE PROCESSING APPARATUS |
US16/409,441 US11264260B2 (en) | 2018-05-14 | 2019-05-10 | Cleaning method and substrate processing apparatus |
US17/586,333 US20220148902A1 (en) | 2018-05-14 | 2022-01-27 | Cleaning method and substrate processing apparatus |
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CN110709776B (en) * | 2017-06-01 | 2022-11-18 | Asml荷兰有限公司 | Particle removal apparatus and related systems |
JP7370259B2 (en) * | 2020-01-27 | 2023-10-27 | 東京エレクトロン株式会社 | Substrate processing equipment |
JP7515383B2 (en) | 2020-03-02 | 2024-07-12 | 東京エレクトロン株式会社 | Cleaning method and plasma processing apparatus |
CN111341719B (en) * | 2020-03-18 | 2023-04-14 | 北京北方华创微电子装备有限公司 | Bearing device, semiconductor equipment and residual charge detection method |
JP7409976B2 (en) * | 2020-06-22 | 2024-01-09 | 東京エレクトロン株式会社 | How to replace plasma processing system, plasma processing equipment and edge ring |
JP7455012B2 (en) * | 2020-07-07 | 2024-03-25 | 東京エレクトロン株式会社 | Plasma processing equipment and mounting table for plasma processing equipment |
KR102522687B1 (en) * | 2020-10-20 | 2023-04-18 | 에이피시스템 주식회사 | Thin film processing apparatus |
KR20220104955A (en) * | 2021-01-19 | 2022-07-26 | 에스케이하이닉스 주식회사 | Substrate Treatment Apparatus Having an Intermediate Electrode |
JP2022181831A (en) | 2021-05-27 | 2022-12-08 | 東京エレクトロン株式会社 | Method for controlling cleaning and plasma processing apparatus |
CN113430504B (en) * | 2021-08-26 | 2021-11-09 | 上海陛通半导体能源科技股份有限公司 | Chemical vapor deposition equipment capable of conveniently lifting and clamping wafer |
US20230066418A1 (en) * | 2021-08-30 | 2023-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Focus ring for a plasma-based semiconductor processing tool |
KR20240121860A (en) | 2021-12-23 | 2024-08-09 | 도쿄엘렉트론가부시키가이샤 | Plasma treatment device |
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US20190348315A1 (en) | 2019-11-14 |
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TWI840355B (en) | 2024-05-01 |
JP2019201047A (en) | 2019-11-21 |
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