US20220037614A1 - Light emitting diode, method of manufacturing the same, and light emitting device - Google Patents
Light emitting diode, method of manufacturing the same, and light emitting device Download PDFInfo
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- US20220037614A1 US20220037614A1 US17/279,664 US202017279664A US2022037614A1 US 20220037614 A1 US20220037614 A1 US 20220037614A1 US 202017279664 A US202017279664 A US 202017279664A US 2022037614 A1 US2022037614 A1 US 2022037614A1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
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- 239000002346 layers by function Substances 0.000 claims abstract description 117
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 229910001316 Ag alloy Inorganic materials 0.000 claims abstract description 14
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000005538 encapsulation Methods 0.000 claims description 61
- 238000002347 injection Methods 0.000 claims description 41
- 239000007924 injection Substances 0.000 claims description 41
- 230000005525 hole transport Effects 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 10
- 238000002834 transmittance Methods 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 5
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- 238000009877 rendering Methods 0.000 abstract description 9
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/824—Cathodes combined with auxiliary electrodes
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- H01L51/5044—
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
- H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
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- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
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- H10K50/00—Organic light-emitting devices
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- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
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- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
Definitions
- the present disclosure relates to the field of lighting devices, and in particular, to a light emitting diode, a light emitting device including the light emitting diode, and a method of manufacturing the light emitting diode.
- color temperature should generally be between 2500K and 4000K, and the required light should include weak blue light and strong red light.
- An embodiment of the present disclosure provides a light emitting diode, including a first electrode, a light-emitting functional layer and a second electrode which are stacked, the first electrode is a transparent electrode, where
- the second electrode includes a metal electrode layer and a semiconductor auxiliary layer, the metal electrode layer is attached to the light-emitting functional layer, the semiconductor auxiliary layer is located on a surface, away from the light-emitting functional layer, of the metal electrode layer,
- the metal electrode layer is made of a magnesium-silver alloy, a thickness of the metal electrode layer is between 3 nm and 5 nm, and
- the semiconductor auxiliary layer is made of indium-zinc oxide (IZO), and a thickness of the semiconductor auxiliary layer is between 100 nm and 130 nm.
- IZO indium-zinc oxide
- a mass percentage of magnesium is between 70% and 90%.
- the second electrode has a light transmittance ranging from 65% to 70% for light having a wavelength of 400 nm to 500 nm.
- the light-emitting functional layer includes a first hole injection layer, a first hole transport layer, a red light-emitting functional layer, a green light-emitting functional layer, a first electron transport layer, a connecting layer, a second hole injection layer, a second hole transport layer, a blue light-emitting functional layer, and a second electron transport layer, which are stacked, and where the second electrode is located on a surface of the second electron transport layer away from the blue light-emitting functional layer.
- a peak wavelength of green light emitted by the light emitting diode is between 530 nm and 540 nm
- a peak wavelength of blue light emitted by the light emitting diode is between 465 nm and 475 nm
- a full width at half maximum of the blue light is between 69 nm and 79 nm.
- the light-emitting diode further includes an encapsulation layer located on a side of the second electrode away from the light-emitting functional layer.
- the encapsulation layer includes a first encapsulation layer and a second encapsulation layer, the first encapsulation layer is attached to the second electrode, and the second encapsulation layer is located on a side of the first encapsulation layer away from the light-emitting functional layer.
- the first encapsulation layer is made of tetrafluoroethylene and the second encapsulation layer is made of silicon nitride.
- An embodiment of the present disclosure provides a light emitting device, including the light emitting diode described above.
- An embodiment of the present disclosure provides a method of manufacturing a light emitting diode, including:
- the second electrode includes a metal electrode layer and a semiconductor auxiliary layer, and the forming the second electrode includes:
- the metal electrode layer is made of magnesium-silver alloy, and a thickness of the metal electrode layer is between 3 nm and 5 nm;
- the semiconductor auxiliary layer is made of IZO, the semiconductor auxiliary layer has a thickness between 100 nm and 130 nm.
- the forming the light-emitting functional layer on the surface of the first electrode includes:
- the second electrode layer is formed on a surface of the second electron transport layer away from the first electrode.
- the method further includes:
- the encapsulation layer includes a first encapsulation layer and a second encapsulation layer, and the forming the encapsulation layer on the surface of the second electrode away from the first electrode further includes:
- FIG. 1 is a schematic diagram of a light emitting diode in the related art
- FIG. 2 is a schematic diagram of a light emitting diode in an embodiment according to the present disclosure
- FIG. 3 is a schematic diagram of a light emitting diode in an embodiment according to the present disclosure.
- FIG. 4 is a spectrum diagram of the light emitting diode shown in FIG. 1 , the light emitting diode shown in FIG. 2 , and the light emitting diode shown in FIG. 3 when emitting light;
- FIG. 5 is a flow chart of a method of manufacturing a light emitting diode according to an embodiment of the present disclosure.
- a method of manufacturing the light emitting diode shown in FIG. 1 includes:
- ITO indium tin oxide
- first hole transport layer 132 on a surface, away from the base substrate, of the first hole injection layer 131 , where a total thickness of the first hole injection layer 131 and the first hole transport layer 132 is 650 angstroms;
- a green light-emitting functional layer 134 on a surface, away from the bae substrate, of the red light-emitting functional layer 133 , where a thickness of each of the red light-emitting functional layer 133 and the green light-emitting functional layer 134 is 300 angstroms;
- a second hole transport layer 138 on a surface, away from the base substrate, of the second hole injection layer 137 , where a total thickness of the second hole injection layer 137 and the second hole transport layer 138 is 990 angstroms;
- a blue light-emitting functional layer 139 with a thickness of 250 angstroms on a surface, away from the base substrate, of the second hole transport layer 138 ;
- the light emitting diode in the related art in order to ensure that the organic light emitting diode has a relative high color rendering index, the light emitting spectrum of the light emitting diode needs to be as wide as possible, and therefore, the light emitting diode with a weak microcavity structure is often used in the field of lighting devices, so that the light emitting efficiency of the light emitting diode is reduced, and the power consumption is increased.
- An embodiment of the present disclosure provides a light emitting diode, as shown in FIG. 2 , including a first electrode 110 , a light-emitting functional layer 130 , and a second electrode 120 , which are stacked, where the first electrode 110 is a transparent electrode, and a light transmittance of the second electrode 120 ranges from 65% to 70% for light having a wavelength of 400 nm to 500 nm. It can be seen that a reflectivity of the second electrode 120 for light having the wavelength of 400 nm to 500 nm is between 30% and 35%.
- the light transmittance of the second electrode 120 for blue light may be defined to be between 65% and 70%.
- the specific structure of the second electrode 120 is not particularly limited.
- the second electrode 120 includes a metal electrode layer 121 and a semiconductor auxiliary layer 122 .
- the metal electrode layer 121 is attached to the light-emitting functional layer 130
- the semiconductor auxiliary layer 122 is disposed on a surface of the metal electrode layer 121 facing away from the light-emitting functional layer 130 .
- the metal electrode layer 121 should have a small thickness so that the metal electrode layer 121 has a light transmittance.
- the second electrode 120 having “a light transmittance between 65% and 70% for light having a wavelength of 400 nm to 500 nm” can be obtained by adjusting the thicknesses of the metal electrode layer 121 and the semiconductor auxiliary layer 122 .
- the thickness of the metal electrode layer 121 is between 3 nm and 5 nm.
- the light emitting diode provided by the present disclosure is a top emission diode
- the first electrode 110 is an anode of the light emitting diode
- the second electrode 120 is a cathode of the light emitting diode.
- the second electrode 120 of the light emitting diode has both transmission and reflection properties, so that when the light emitting diode emits light, the second electrode 120 can enhance an intensity of a microcavity formed in the light emitting diode, but does not enhance a weak microcavity to a strong microcavity, and thus when the light emitting diode emits light, a high color rendering index, a wide spectrum and a high light emitting efficiency can be obtained, thereby the power consumption of the light emitting diode is reduced.
- the metal electrode layer 121 is made of a metal material
- the semiconductor auxiliary layer 122 is made of a semiconductor material.
- the main function of the metal electrode layer 121 is to conduct electricity and form an electrode, and the metal electrode layer 121 can also provide better light reflection performance.
- the main function of the semiconductor auxiliary layer 122 is to adjust the transmittance of the second electrode 120
- the semiconductor auxiliary layer 122 is made of a transparent semiconductor material (e.g., indium zinc oxide (IZO)).
- IZO indium zinc oxide
- the metal electrode layer 121 is made of a magnesium-silver alloy
- the semiconductor auxiliary layer 122 is made of indium zinc oxide.
- the magnesium is 70% to 90% by mass of the magnesium-silver alloy forming the metal electrode layer 121 .
- the metal electrode layer 121 may be obtained by magnetron sputtering using the magnesium-silver alloy as a target material.
- a thickness of the semiconductor auxiliary layer 122 is between 100 nm and 130 nm.
- the color of the light emitted from the light emitting diode there is no particular requirement on the color of the light emitted from the light emitting diode.
- the material of the light-emitting functional layer 130 may be determined according to a specific desired color of light to be emitted.
- the light emitting diode may emit white light.
- the light-emitting functional layer 130 includes a first hole injection layer 131 , a first hole transport layer 132 , a red light-emitting functional layer 133 , a green light-emitting functional layer 134 , a first electron transport layer 135 , a connecting layer 136 , a second hole injection layer 137 , a second hole transport layer 138 , a blue light-emitting functional layer 139 , and a second electron transport layer 1310 , which are stacked.
- the first hole injection layer 131 is disposed on the first electrode 110
- the second electrode 120 is disposed on a surface of the second electron transport layer 1310 facing away from the blue light-emitting functional layer 139 .
- the green light-emitting functional layer 134 is formed directly after the red light-emitting functional layer 133 is formed, then the connecting layer is formed, and the blue light-emitting functional layer is formed on the connecting layer.
- a peak value of green light in the light emitted by the light emitting diode is 520 nm to 535 nm
- a peak value of blue light in the light emitted by the light emitting diode is 465 nm to 475 nm
- a full width at half maximum of the blue light is 69 nm to 79 nm.
- the connecting layer 136 allows both electrons and holes to pass therethrough, and thus, the connecting layer 136 may be made of an aluminum nitride material.
- an encapsulation layer 140 is used to perform encapsulation.
- the encapsulation layer 140 includes a first encapsulation layer 141 made of tetrafluoroethylene and a second encapsulation layer 142 made of silicon nitride, the first encapsulation layer 141 is attached to the second electrode 120 , and the second encapsulation layer 142 is located on a side of the first encapsulation layer 141 facing away from the light-emitting functional layer 130 .
- the first encapsulation layer 141 made of tetrafluoroethylene has a certain light reflecting performance, so that a weak microcavity of the light emitting diode can be enhanced to a certain extent, and the light emitting efficiency is improved.
- An embodiment of the present disclosure provides a light emitting device including the above light emitting diode provided by the present disclosure.
- the light emitting diode has a relative high color rendering index and a relative high light emitting efficiency.
- a specific application of the light emitting device is not particularly limited, and for example, the light emitting device may be a lighting device. Certainly, the present disclosure is not limited thereto, and the light emitting device may also be a backlight of a display apparatus.
- An embodiment of the present disclosure provides a method of manufacturing a light emitting diode, as shown in FIG. 5 , including steps S 110 to S 130 .
- step S 110 a first electrode made of a transparent material is formed.
- step S 120 a light-emitting functional layer is formed on a surface of the first electrode.
- step S 130 a second electrode having a light transmittance ranging from 65% to 70% for light having a wavelength of 400 nm to 500 nm is formed on a surface of the light-emitting functional layer away from the first electrode, where,
- the step of forming the second electrode on the surface of the light-emitting functional layer away from the first electrode includes:
- the metal electrode layer is made of magnesium-silver alloy, and a thickness of the metal electrode layer is between 3 nm and 5 nm;
- the light emitting diode is a top emission type light emitting diode, since the second electrode is both reflective and transmissive, when the light emitting diode emits light, the weak resonant microcavity formed in the light emitting diode is enhanced but is not enhanced to a strong microcavity, and thus, a high light emitting efficiency can be achieved while ensuring a high color rendering index, and thus the power consumption is low.
- the semiconductor auxiliary layer is made of IZO.
- the metal electrode layer may be formed by sputtering, and similarly, the semiconductor auxiliary layer may be formed by sputtering.
- the magnesium-silver alloy has magnesium in a mass percentage of 70% to 90%.
- the metal electrode layer has a thickness between 3 nm and 5 nm.
- the semiconductor auxiliary layer has a thickness between 100 nm and 130 nm.
- the light emitting diode is a white light emitting diode
- the step of forming the light-emitting functional layer on the surface of the first electrode includes:
- each layer in the light-emitting functional layer may be formed by evaporation.
- the green light-emitting functional layer is formed directly after the red light-emitting functional layer is formed, and the red light-emitting functional layer and the green light-emitting functional layer are formed as a co-evaporation layer.
- the method further includes: after forming the second electrode, forming an encapsulation layer on a side of the second electrode away from the light-emitting functional layer.
- a first encapsulation layer with light reflection performance may be disposed on a side of the second electrode away from the light-emitting functional layer, and a second encapsulation layer is formed by using an inorganic material, and specifically, after the second electrode is formed, the method further includes:
- An embodiment of the present disclosure provides a method of manufacturing a light emitting diode as shown in FIG. 2 (example 1), including:
- ITO indium tin oxide
- first hole injection layer 131 on the surface of the first electrode 110 away from the base substrate by evaporation, and the material of the first hole injection layer 131 is PEDOT (poly 3, 4-ethylenedioxythiophene);
- the material of the first hole transport layer is NPB, and a total thickness of the first hole injection layer 131 and the first hole transport layer 132 is 450 angstroms; forming the red light-emitting functional layer 133 on the surface of the first hole transport layer 132 away from the base substrate by evaporation, and the material of the red light-emitting functional layer is Btp2Ir (acac);
- the green light-emitting functional layer 134 on the surface of the red light-emitting functional layer 133 away from the base substrate by evaporation, and the material of the green light-emitting functional layer is Ir(ppy) 3 , where the thicknesses of each of the red light-emitting functional layer 133 and the green light-emitting functional layer 134 is 300 angstroms;
- the first electron transport layer 135 with a thickness of 200 angstroms on the surface of the green light-emitting functional layer 134 away from the base substrate by evaporation, and the material of the first electron transport layer is TPBi;
- connecting layer 136 with a thickness of 150 angstroms on the surface of the first electron transport layer 135 away from the base substrate by evaporation, where the connecting layer is made of aluminum nitride;
- the second hole injection layer 137 on the surface of the connecting layer 136 away from the base substrate by evaporation, where the material of the second hole injection layer is PEDOT;
- the material of the second hole transport layer is NPB, and a total thickness of the second hole injection layer 137 and the second hole transport layer 138 is 1150 angstroms;
- the blue light-emitting functional layer 139 with a thickness of 250 angstroms on the surface of the hole transport layer 138 away from the base substrate by evaporation, and the material of the blue light-emitting functional layer is MADN;
- the second electron transport layer 1310 with a thickness of 550 angstroms on the surface of the blue light-emitting functional layer 139 away from the base substrate by evaporation, and the material of the second electron transport layer is TPBi;
- the metal electrode layer 121 with a thickness of 40 angstroms on the surface of the second electron transport layer away from the base substrate by sputtering using the magnesium-silver alloy as a target material;
- the semiconductor auxiliary layer 122 with a thickness of 1000 angstroms on the surface of the metal electrode layer away from the base substrate by sputtering using IZO as a target material, thereby obtaining the second electrode 120 including the metal electrode layer and the semiconductor auxiliary layer;
- An embodiment of the present disclosure provides a method of manufacturing the light emitting diode shown in FIG. 3 (example 2) which is different from the above-described method of manufacturing the light emitting diode shown in FIG. 2 only in the step of forming the encapsulation layer. Only this difference will be described below.
- the step of forming the encapsulation layer in this embodiment specifically includes:
- a tetrafluoroethylene layer on the surface of the semiconductor auxiliary layer 122 away from the base substrate by coating to obtain a first encapsulation layer 141 with a thickness of 1 ⁇ m;
- a silicon nitride layer on the surface of the first encapsulation layer 141 away from the base substrate by chemical vapor deposition to form a second encapsulation layer 142 having a thickness of 1 ⁇ m, where the first encapsulation layer 141 and the second encapsulation layer 142 together form the encapsulation layer 140 .
- the spectrum of the light emitting diodes in the example 1, the example 2, and the related art are each measured at a current density of 10 using an IVL test apparatus, resulting in the spectrum chart shown in FIG. 4 .
- a peak wavelength of green light is 520 nm to 535 nm
- a peak wavelength of blue light is 465 nm to 475 nm
- a full width at half maximum of blue light is 69 nm to 79 nm.
- the radiant energy of the light emitting diode obtained in example 2 is the highest, and the radiant energy of the light emitting diode obtained in the related art is the lowest.
- the color rendering index of the light emitting device in the related art is 85, while the color rendering index of the light emitting device in example 2 is up to 91.
Abstract
Description
- The present application claims priority to Chinese patent application No. 201910625633.4 filed at Chinese Intellectual Property Office on Jul. 11, 2019, the disclosure of which is incorporated herein by reference in its entirety.
- The present disclosure relates to the field of lighting devices, and in particular, to a light emitting diode, a light emitting device including the light emitting diode, and a method of manufacturing the light emitting diode.
- Unlike display devices, important parameters of organic light emitting diode products used for illumination include color temperature, power, efficiency, color rendering index, and the like. In order to protect the human eyes, the color temperature should generally be between 2500K and 4000K, and the required light should include weak blue light and strong red light.
- An embodiment of the present disclosure provides a light emitting diode, including a first electrode, a light-emitting functional layer and a second electrode which are stacked, the first electrode is a transparent electrode, where
- the second electrode includes a metal electrode layer and a semiconductor auxiliary layer, the metal electrode layer is attached to the light-emitting functional layer, the semiconductor auxiliary layer is located on a surface, away from the light-emitting functional layer, of the metal electrode layer,
- the metal electrode layer is made of a magnesium-silver alloy, a thickness of the metal electrode layer is between 3 nm and 5 nm, and
- the semiconductor auxiliary layer is made of indium-zinc oxide (IZO), and a thickness of the semiconductor auxiliary layer is between 100 nm and 130 nm.
- In some implementations, in the magnesium-silver alloy, a mass percentage of magnesium is between 70% and 90%.
- In some implementations, the second electrode has a light transmittance ranging from 65% to 70% for light having a wavelength of 400 nm to 500 nm.
- In some implementations, the light-emitting functional layer includes a first hole injection layer, a first hole transport layer, a red light-emitting functional layer, a green light-emitting functional layer, a first electron transport layer, a connecting layer, a second hole injection layer, a second hole transport layer, a blue light-emitting functional layer, and a second electron transport layer, which are stacked, and where the second electrode is located on a surface of the second electron transport layer away from the blue light-emitting functional layer.
- In some implementations, a peak wavelength of green light emitted by the light emitting diode is between 530 nm and 540 nm, a peak wavelength of blue light emitted by the light emitting diode is between 465 nm and 475 nm, and a full width at half maximum of the blue light is between 69 nm and 79 nm.
- In some implementations, the light-emitting diode further includes an encapsulation layer located on a side of the second electrode away from the light-emitting functional layer.
- In some implementations, the encapsulation layer includes a first encapsulation layer and a second encapsulation layer, the first encapsulation layer is attached to the second electrode, and the second encapsulation layer is located on a side of the first encapsulation layer away from the light-emitting functional layer.
- In some implementations, the first encapsulation layer is made of tetrafluoroethylene and the second encapsulation layer is made of silicon nitride.
- An embodiment of the present disclosure provides a light emitting device, including the light emitting diode described above.
- An embodiment of the present disclosure provides a method of manufacturing a light emitting diode, including:
- forming a first electrode made of a transparent material;
- forming a light-emitting functional layer on a surface of the first electrode;
- forming a second electrode on a surface of the light-emitting functional layer away from the first electrode, where the second electrode includes a metal electrode layer and a semiconductor auxiliary layer, and the forming the second electrode includes:
- forming the metal electrode layer on the light-emitting functional layer, where the metal electrode layer is made of magnesium-silver alloy, and a thickness of the metal electrode layer is between 3 nm and 5 nm; and
- forming the semiconductor auxiliary layer on a surface of the metal electrode layer away from the light-emitting functional layer, the semiconductor auxiliary layer is made of IZO, the semiconductor auxiliary layer has a thickness between 100 nm and 130 nm.
- In some implementations, the forming the light-emitting functional layer on the surface of the first electrode includes:
- forming a first hole injection layer on the surface of the first electrode;
- forming a first hole transport layer on a surface of the first hole injection layer away from the first electrode;
- forming a red light-emitting functional layer on a surface of the first hole transport layer away from the first electrode;
- forming a green light-emitting functional layer on a surface of the red light-emitting functional layer away from the first electrode;
- forming a first electron transport layer on a surface of the green light-emitting functional layer away from the first electrode;
- forming a connecting layer on a surface of the first electron transport layer away from the first electrode;
- forming a second hole injection layer on a surface of the connecting layer away from the first electrode;
- forming a second hole transport layer on a surface of the second hole injection layer away from the first electrode;
- forming a blue light-emitting functional layer on a surface of the second hole transport layer away from the first electrode;
- forming a second electron transport layer on a surface of the blue light-emitting functional layer away from the first electrode, and where,
- the second electrode layer is formed on a surface of the second electron transport layer away from the first electrode.
- In some implementations, the method further includes:
- forming an encapsulation layer on a surface of the second electrode away from the first electrode.
- In some implementations, the encapsulation layer includes a first encapsulation layer and a second encapsulation layer, and the forming the encapsulation layer on the surface of the second electrode away from the first electrode further includes:
- forming the first encapsulation layer on the surface of the second electrode away from the first electrode using tetrafluoroethylene; and
- forming the second encapsulation layer on a surface of the first encapsulation layer away from the second electrode using silicon nitride.
- The accompanying drawings, which are included to provide a further understanding of the present disclosure and are incorporated in and constitute a part of this specification, and together with embodiments below serve to explain the present disclosure, but do not constitute a limitation of the present disclosure. In the drawings:
-
FIG. 1 is a schematic diagram of a light emitting diode in the related art; -
FIG. 2 is a schematic diagram of a light emitting diode in an embodiment according to the present disclosure; -
FIG. 3 is a schematic diagram of a light emitting diode in an embodiment according to the present disclosure; -
FIG. 4 is a spectrum diagram of the light emitting diode shown inFIG. 1 , the light emitting diode shown inFIG. 2 , and the light emitting diode shown inFIG. 3 when emitting light; -
FIG. 5 is a flow chart of a method of manufacturing a light emitting diode according to an embodiment of the present disclosure. - The specific embodiments of the present disclosure are described in detail below in combination with the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present disclosure and are not used to limit the present disclosure.
- In the related art, a method of manufacturing the light emitting diode shown in
FIG. 1 includes: - providing a base substrate (not shown in the drawings);
- depositing an indium tin oxide (ITO) material layer having a thickness of 700 angstrom on a surface of the base substrate to form a
first electrode layer 110; - forming, by evaporation, a first
hole injection layer 131 on a surface, away from the base substrate, of thefirst electrode layer 110; - forming, by evaporation, a first
hole transport layer 132 on a surface, away from the base substrate, of the firsthole injection layer 131, where a total thickness of the firsthole injection layer 131 and the firsthole transport layer 132 is 650 angstroms; - forming, by evaporation, a red light-emitting
functional layer 133 on a surface, away from the base substrate, of the firsthole transport layer 132; - forming, by evaporation, a green light-emitting
functional layer 134 on a surface, away from the bae substrate, of the red light-emittingfunctional layer 133, where a thickness of each of the red light-emittingfunctional layer 133 and the green light-emittingfunctional layer 134 is 300 angstroms; - forming, by evaporation, a first
electron transport layer 135 with a thickness of 200 angstroms on a surface, away from the base substrate, of the green light-emittingfunctional layer 134; - forming, by evaporation, a connecting
layer 136 with a thickness of 150 angstroms on a surface, away from the substrate, of the firstelectron transport layer 135; - forming, by evaporation, a second
hole injection layer 137 on a surface, away from the base substrate, of the connectinglayer 136; - forming, by evaporation, a second
hole transport layer 138 on a surface, away from the base substrate, of the secondhole injection layer 137, where a total thickness of the secondhole injection layer 137 and the secondhole transport layer 138 is 990 angstroms; - forming, by evaporation, a blue light-emitting
functional layer 139 with a thickness of 250 angstroms on a surface, away from the base substrate, of the secondhole transport layer 138; - forming, by evaporation, a second
electron transmission layer 1310 with a thickness of 250 angstroms on a surface, away from the base substrate, of the blue light-emittingfunctional layer 139; - forming, by sputtering, a
second electrode 120 with a thickness of 1500 angstroms on a surface, away from the base substrate, of the secondelectron transport layer 1310 by using metal aluminum as a target material; - forming, by chemical vapor deposition, a silicon nitride with a thickness of 1 μm on a surface, away from the base substrate, of the
second electrode 120 to form anencapsulation layer 140. - For the light emitting diode in the related art, in order to ensure that the organic light emitting diode has a relative high color rendering index, the light emitting spectrum of the light emitting diode needs to be as wide as possible, and therefore, the light emitting diode with a weak microcavity structure is often used in the field of lighting devices, so that the light emitting efficiency of the light emitting diode is reduced, and the power consumption is increased.
- Therefore, how to reduce the power consumption of the light emitting diode while ensuring that the light emitting diode has a relative high color rendering index becomes an urgent technical problem to be solved in the field.
- An embodiment of the present disclosure provides a light emitting diode, as shown in
FIG. 2 , including afirst electrode 110, a light-emittingfunctional layer 130, and asecond electrode 120, which are stacked, where thefirst electrode 110 is a transparent electrode, and a light transmittance of thesecond electrode 120 ranges from 65% to 70% for light having a wavelength of 400 nm to 500 nm. It can be seen that a reflectivity of thesecond electrode 120 for light having the wavelength of 400 nm to 500 nm is between 30% and 35%. - Note that, the light transmittance of the
second electrode 120 for blue light may be defined to be between 65% and 70%. - In the present disclosure, the specific structure of the
second electrode 120 is not particularly limited. In an implementation, as shown inFIG. 2 , thesecond electrode 120 includes ametal electrode layer 121 and asemiconductor auxiliary layer 122. Themetal electrode layer 121 is attached to the light-emittingfunctional layer 130, and thesemiconductor auxiliary layer 122 is disposed on a surface of themetal electrode layer 121 facing away from the light-emittingfunctional layer 130. - Note that, the
metal electrode layer 121 should have a small thickness so that themetal electrode layer 121 has a light transmittance. Thesecond electrode 120 having “a light transmittance between 65% and 70% for light having a wavelength of 400 nm to 500 nm” can be obtained by adjusting the thicknesses of themetal electrode layer 121 and thesemiconductor auxiliary layer 122. In some implementations, the thickness of themetal electrode layer 121 is between 3 nm and 5 nm. - The light emitting diode provided by the present disclosure is a top emission diode, the
first electrode 110 is an anode of the light emitting diode, and thesecond electrode 120 is a cathode of the light emitting diode. Thesecond electrode 120 of the light emitting diode has both transmission and reflection properties, so that when the light emitting diode emits light, thesecond electrode 120 can enhance an intensity of a microcavity formed in the light emitting diode, but does not enhance a weak microcavity to a strong microcavity, and thus when the light emitting diode emits light, a high color rendering index, a wide spectrum and a high light emitting efficiency can be obtained, thereby the power consumption of the light emitting diode is reduced. - In the present disclosure, the
metal electrode layer 121 is made of a metal material, and thesemiconductor auxiliary layer 122 is made of a semiconductor material. The main function of themetal electrode layer 121 is to conduct electricity and form an electrode, and themetal electrode layer 121 can also provide better light reflection performance. The main function of thesemiconductor auxiliary layer 122 is to adjust the transmittance of thesecond electrode 120, and thesemiconductor auxiliary layer 122 is made of a transparent semiconductor material (e.g., indium zinc oxide (IZO)). - In some implementations, the
metal electrode layer 121 is made of a magnesium-silver alloy, and thesemiconductor auxiliary layer 122 is made of indium zinc oxide. - In order to make the
metal electrode layer 121 have both good reflectivity and good conductivity, in some implementations, the magnesium is 70% to 90% by mass of the magnesium-silver alloy forming themetal electrode layer 121. When themetal electrode layer 121 is manufactured, themetal electrode layer 121 may be obtained by magnetron sputtering using the magnesium-silver alloy as a target material. - In some implementations, a thickness of the
semiconductor auxiliary layer 122 is between 100 nm and 130 nm. - In the present disclosure, there is no particular requirement on the color of the light emitted from the light emitting diode. The material of the light-emitting
functional layer 130 may be determined according to a specific desired color of light to be emitted. For example, the light emitting diode may emit white light. Accordingly, the light-emittingfunctional layer 130 includes a firsthole injection layer 131, a firsthole transport layer 132, a red light-emittingfunctional layer 133, a green light-emittingfunctional layer 134, a firstelectron transport layer 135, a connectinglayer 136, a secondhole injection layer 137, a secondhole transport layer 138, a blue light-emittingfunctional layer 139, and a secondelectron transport layer 1310, which are stacked. - The first
hole injection layer 131 is disposed on thefirst electrode 110, and thesecond electrode 120 is disposed on a surface of the secondelectron transport layer 1310 facing away from the blue light-emittingfunctional layer 139. - In the light emitting diode provided by the present disclosure, the green light-emitting
functional layer 134 is formed directly after the red light-emittingfunctional layer 133 is formed, then the connecting layer is formed, and the blue light-emitting functional layer is formed on the connecting layer. A peak value of green light in the light emitted by the light emitting diode is 520 nm to 535 nm, a peak value of blue light in the light emitted by the light emitting diode is 465 nm to 475 nm, and a full width at half maximum of the blue light is 69 nm to 79 nm. - The connecting
layer 136 allows both electrons and holes to pass therethrough, and thus, the connectinglayer 136 may be made of an aluminum nitride material. - After the
second electrode layer 120 is formed, as shown inFIGS. 2 and 3 , anencapsulation layer 140 is used to perform encapsulation. - In the present disclosure, a specific structure of the
encapsulation layer 140 is not particularly limited, as long as the light-emitting functional layer of the light emitting diode can be isolated from outside to prevent the light-emitting functional layer from being corroded by external water and oxygen. In some implementations, as shown inFIG. 3 , theencapsulation layer 140 includes afirst encapsulation layer 141 made of tetrafluoroethylene and asecond encapsulation layer 142 made of silicon nitride, thefirst encapsulation layer 141 is attached to thesecond electrode 120, and thesecond encapsulation layer 142 is located on a side of thefirst encapsulation layer 141 facing away from the light-emittingfunctional layer 130. - The
first encapsulation layer 141 made of tetrafluoroethylene has a certain light reflecting performance, so that a weak microcavity of the light emitting diode can be enhanced to a certain extent, and the light emitting efficiency is improved. - An embodiment of the present disclosure provides a light emitting device including the above light emitting diode provided by the present disclosure.
- As described above, the light emitting diode has a relative high color rendering index and a relative high light emitting efficiency. In the present disclosure, a specific application of the light emitting device is not particularly limited, and for example, the light emitting device may be a lighting device. Certainly, the present disclosure is not limited thereto, and the light emitting device may also be a backlight of a display apparatus.
- An embodiment of the present disclosure provides a method of manufacturing a light emitting diode, as shown in
FIG. 5 , including steps S110 to S130. - In step S110, a first electrode made of a transparent material is formed.
- In step S120, a light-emitting functional layer is formed on a surface of the first electrode.
- In step S130, a second electrode having a light transmittance ranging from 65% to 70% for light having a wavelength of 400 nm to 500 nm is formed on a surface of the light-emitting functional layer away from the first electrode, where,
- the step of forming the second electrode on the surface of the light-emitting functional layer away from the first electrode includes:
- forming a metal electrode layer on the surface of the light-emitting functional layer away from the first electrode, where the metal electrode layer is made of magnesium-silver alloy, and a thickness of the metal electrode layer is between 3 nm and 5 nm; and
- forming a semiconductor auxiliary layer on a surface of the metal electrode layer away from the first electrode.
- As described above, the light emitting diode is a top emission type light emitting diode, since the second electrode is both reflective and transmissive, when the light emitting diode emits light, the weak resonant microcavity formed in the light emitting diode is enhanced but is not enhanced to a strong microcavity, and thus, a high light emitting efficiency can be achieved while ensuring a high color rendering index, and thus the power consumption is low.
- In some implementations, the semiconductor auxiliary layer is made of IZO.
- In the present disclosure, the metal electrode layer may be formed by sputtering, and similarly, the semiconductor auxiliary layer may be formed by sputtering.
- In order to ensure that the metal electrode layer has better conductive performance and proper light reflection performance, and reduce the cost of the light emitting diode, in some implementations, the magnesium-silver alloy has magnesium in a mass percentage of 70% to 90%.
- To ensure that the second electrode is light transmissive, in some implementations, the metal electrode layer has a thickness between 3 nm and 5 nm.
- In some implementations, the semiconductor auxiliary layer has a thickness between 100 nm and 130 nm.
- In some implementations, the light emitting diode is a white light emitting diode, and accordingly, the step of forming the light-emitting functional layer on the surface of the first electrode includes:
- forming a first hole injection layer on a surface of the first electrode;
- forming a first hole transport layer on a surface of the first hole injection layer away from the first electrode;
- forming a red light-emitting functional layer on a surface of the first hole transport layer away from the first electrode;
- forming a green light-emitting functional layer on a surface of the red light-emitting functional layer away from the first electrode;
- forming a first electron transport layer on a surface of the green light-emitting functional layer away from the first electrode;
- forming a connecting layer on a surface of the first electron transport layer away from the first electrode;
- forming a second hole injection layer on a surface of the connecting layer away from the first electrode;
- forming a second hole transport layer on a surface of the second hole injection layer away from the first electrode;
- forming a blue light-emitting functional layer on a surface of the second hole transport layer away from the first electrode; and
- forming a second electron transport layer on a surface of the blue light-emitting functional layer away from the first electrode.
- In the present disclosure, each layer in the light-emitting functional layer may be formed by evaporation. In the present disclosure, the green light-emitting functional layer is formed directly after the red light-emitting functional layer is formed, and the red light-emitting functional layer and the green light-emitting functional layer are formed as a co-evaporation layer.
- In order to prevent water and oxygen from corroding the light-emitting functional layer, in some implementations, the method further includes: after forming the second electrode, forming an encapsulation layer on a side of the second electrode away from the light-emitting functional layer.
- In order to further enhance the weak microcavity, in some implementations, a first encapsulation layer with light reflection performance may be disposed on a side of the second electrode away from the light-emitting functional layer, and a second encapsulation layer is formed by using an inorganic material, and specifically, after the second electrode is formed, the method further includes:
- forming the first encapsulation layer on a side of the second electrode away from the light-emitting functional layer by using tetrafluoroethylene; and
- forming the second encapsulation layer on a side of the first encapsulation layer away from the light-emitting functional layer by using silicon nitride.
- An embodiment of the present disclosure provides a method of manufacturing a light emitting diode as shown in
FIG. 2 (example 1), including: - providing a base substrate (not shown in the drawings);
- depositing an ITO (indium tin oxide) material layer with a thickness of 120 angstroms as the
first electrode 110 on a surface of the base substrate; - forming the first
hole injection layer 131 on the surface of thefirst electrode 110 away from the base substrate by evaporation, and the material of the firsthole injection layer 131 is PEDOT (poly 3, 4-ethylenedioxythiophene); - forming the first
hole transport layer 132 on the surface of the firsthole injection layer 131 away from the base substrate by evaporation, the material of the first hole transport layer is NPB, and a total thickness of the firsthole injection layer 131 and the firsthole transport layer 132 is 450 angstroms; forming the red light-emittingfunctional layer 133 on the surface of the firsthole transport layer 132 away from the base substrate by evaporation, and the material of the red light-emitting functional layer is Btp2Ir (acac); - forming the green light-emitting
functional layer 134 on the surface of the red light-emittingfunctional layer 133 away from the base substrate by evaporation, and the material of the green light-emitting functional layer is Ir(ppy)3, where the thicknesses of each of the red light-emittingfunctional layer 133 and the green light-emittingfunctional layer 134 is 300 angstroms; - forming the first
electron transport layer 135 with a thickness of 200 angstroms on the surface of the green light-emittingfunctional layer 134 away from the base substrate by evaporation, and the material of the first electron transport layer is TPBi; - forming the connecting
layer 136 with a thickness of 150 angstroms on the surface of the firstelectron transport layer 135 away from the base substrate by evaporation, where the connecting layer is made of aluminum nitride; - forming the second
hole injection layer 137 on the surface of the connectinglayer 136 away from the base substrate by evaporation, where the material of the second hole injection layer is PEDOT; - forming the second
hole transport layer 138 on the surface of the secondhole injection layer 137 away from the base substrate by evaporation, the material of the second hole transport layer is NPB, and a total thickness of the secondhole injection layer 137 and the secondhole transport layer 138 is 1150 angstroms; - forming the blue light-emitting
functional layer 139 with a thickness of 250 angstroms on the surface of thehole transport layer 138 away from the base substrate by evaporation, and the material of the blue light-emitting functional layer is MADN; - forming the second
electron transport layer 1310 with a thickness of 550 angstroms on the surface of the blue light-emittingfunctional layer 139 away from the base substrate by evaporation, and the material of the second electron transport layer is TPBi; - forming the
metal electrode layer 121 with a thickness of 40 angstroms on the surface of the second electron transport layer away from the base substrate by sputtering using the magnesium-silver alloy as a target material; - forming the
semiconductor auxiliary layer 122 with a thickness of 1000 angstroms on the surface of the metal electrode layer away from the base substrate by sputtering using IZO as a target material, thereby obtaining thesecond electrode 120 including the metal electrode layer and the semiconductor auxiliary layer; and - forming a silicon nitride layer with a thickness of 1 μm on the surface of the
semiconductor auxiliary layer 122 away from the base substrate by chemical vapor deposition to form theencapsulation layer 140. - An embodiment of the present disclosure provides a method of manufacturing the light emitting diode shown in
FIG. 3 (example 2) which is different from the above-described method of manufacturing the light emitting diode shown inFIG. 2 only in the step of forming the encapsulation layer. Only this difference will be described below. Specifically, the step of forming the encapsulation layer in this embodiment specifically includes: - forming a tetrafluoroethylene layer on the surface of the
semiconductor auxiliary layer 122 away from the base substrate by coating to obtain afirst encapsulation layer 141 with a thickness of 1 μm; - forming a silicon nitride layer on the surface of the
first encapsulation layer 141 away from the base substrate by chemical vapor deposition to form asecond encapsulation layer 142 having a thickness of 1 μm, where thefirst encapsulation layer 141 and thesecond encapsulation layer 142 together form theencapsulation layer 140. - The spectrum of the light emitting diodes in the example 1, the example 2, and the related art are each measured at a current density of 10 using an IVL test apparatus, resulting in the spectrum chart shown in
FIG. 4 . - In light emitted by the light emitting diode obtained in example 2, a peak wavelength of green light is 520 nm to 535 nm, a peak wavelength of blue light is 465 nm to 475 nm, and a full width at half maximum of blue light is 69 nm to 79 nm.
- As can be seen from
FIG. 4 , the radiant energy of the light emitting diode obtained in example 2 is the highest, and the radiant energy of the light emitting diode obtained in the related art is the lowest. - It was found from test by the CRI test equipment that, under a condition that the efficiency is 65 cd/a at 10J, the color rendering index of the light emitting device in the related art is 85, while the color rendering index of the light emitting device in example 2 is up to 91.
- It will be understood that the above implementations are merely exemplary implementations employed to illustrate principles of the present disclosure, and the present disclosure is not limited thereto. It will be apparent to those ordinary skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the present disclosure, and these changes and modifications are to be considered within the scope of the present disclosure.
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