US20220014169A1 - Lamb wave resonator and other type of acoustic wave resonator included in one or more filters - Google Patents
Lamb wave resonator and other type of acoustic wave resonator included in one or more filters Download PDFInfo
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- US20220014169A1 US20220014169A1 US17/449,063 US202117449063A US2022014169A1 US 20220014169 A1 US20220014169 A1 US 20220014169A1 US 202117449063 A US202117449063 A US 202117449063A US 2022014169 A1 US2022014169 A1 US 2022014169A1
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Definitions
- Embodiments of this disclosure relate to acoustic wave filters.
- Acoustic wave filters can filter radio frequency signals.
- An acoustic wave filter can include a plurality of resonators arranged to filter a radio frequency signal. The resonators can be arranged as a ladder circuit.
- Example acoustic wave filters include surface acoustic wave (SAW) filters, bulk acoustic wave (BAW) filters, and Lamb wave resonator filters.
- SAW surface acoustic wave
- BAW bulk acoustic wave
- Lamb wave resonator filters Lamb wave resonator filters.
- a film bulk acoustic resonator (FBAR) filter is an example of a BAW filter.
- a solidly mounted resonator (SMR) filter is another example of a BAW filter.
- Acoustic wave filters can be implemented in radio frequency electronic systems. For instance, filters in a radio frequency front end of a mobile phone can include acoustic wave filters. Two acoustic wave filters can be arranged as a duplexer.
- One aspect of this disclosure is an acoustic wave device that includes an acoustic wave filter configured to filter a radio frequency signal and a loop circuit coupled to the acoustic wave filter.
- the loop circuit is configured to generate an anti-phase signal to a target signal at a particular frequency.
- the loop circuit including a Lamb wave element.
- the acoustic wave filter can include can include a bulk acoustic wave resonator.
- the bulk acoustic wave resonator and the Lamb wave element can each include the same piezoelectric material.
- the piezoelectric material can be aluminum nitride.
- the bulk acoustic wave resonator and the Lamb wave element can share a cavity.
- the bulk acoustic wave resonator and the Lamb wave element can have separate cavities.
- the bulk acoustic wave resonator can be a film bulk acoustic resonator.
- the acoustic wave filter can include can include a surface acoustic wave resonator.
- the acoustic wave filter can include a Lamb wave resonator.
- the acoustic wave filter can be a receive filter.
- the acoustic wave filter can be a transmit filter.
- the Lamb wave element can include an aluminum nitride layer.
- the Lamb wave element can include a lithium niobate layer.
- the Lamb wave element can include a lithium tantalate layer.
- the Lamb wave element can include an interdigital transducer electrode on a piezoelectric layer and gratings disposed on the piezoelectric layer on opposing sides of the interdigital transducer electrode.
- the Lamb wave element can include an interdigital transducer electrode on a piezoelectric layer, in which the interdigital transducer electrode has free edges.
- the Lamb wave element can operate in one or more of a lowest-order asymmetric mode, a lowest-order symmetric mode, a lowest-order shear horizontal mode, a first-order asymmetric mode, a first-order symmetric mode, or a first-order shear horizontal mode.
- the Lamb wave element and at least one resonator of the acoustic wave filter can be on a common semiconductor substrate.
- the semiconductor substrate can be a silicon substrate.
- the acoustic wave device can further include a second acoustic wave filter, in which the acoustic wave filter and the second acoustic wave filter are included in a duplexer.
- the duplexer includes an acoustic wave device.
- the acoustic wave device includes an acoustic wave filter and a loop circuit coupled to the acoustic wave filter.
- the loop circuit is configured to generate an anti-phase signal to a target signal at a particular frequency.
- the loop circuit includes a Lamb wave element.
- the radio frequency switch is arranged to pass a radio frequency signal associated with a port of the duplexer.
- the acoustic wave filter can include a film bulk acoustic wave resonator.
- the film bulk acoustic wave resonator and the Lamb wave element can be on a common substrate.
- the common substrate can be a silicon substrate.
- the Lamb wave element can include an aluminum nitride layer.
- the radio frequency module can further include a power amplifier, in which the radio frequency switch coupled in a signal path between the power amplifier and the duplexer.
- the radio frequency switch can be an antenna switch, and the port of the duplexer can be an antenna port coupled to the radio frequency switch.
- a wireless communication device that includes a radio frequency front end and an antenna in communication with the radio frequency front end.
- the radio frequency front end includes an acoustic wave device.
- the acoustic wave device includes an acoustic wave filter configured to filter a radio frequency signal and a loop circuit coupled to the acoustic wave filter.
- the loop circuit configured to generate an anti-phase signal to a target signal at a particular frequency.
- the loop circuit includes a Lamb wave element.
- the acoustic wave filter can includes a film bulk acoustic wave resonator.
- the film bulk acoustic wave resonator and the Lamb wave element can be on a common silicon substrate.
- an acoustic wave device that includes a bulk acoustic wave resonator and a Lamb wave element.
- the bulk acoustic wave resonator includes a piezoelectric layer positioned between a first electrode and a second electrode.
- the bulk acoustic wave resonator and the Lamb wave element are implemented on a common substrate of a die.
- the acoustic wave device can further include additional bulk acoustic wave resonators on the common substrate.
- the bulk acoustic wave resonator and the additional bulk acoustic wave resonators can be included in a band pass filter.
- the band pass filter can be arranged to filter a radio frequency signal.
- the Lamb wave element can be included in a loop circuit that is coupled to the band pass filter.
- the loop circuit can be configured generate an anti-phase signal to a target signal at a particular frequency.
- the bulk acoustic wave resonator can be a film bulk acoustic resonator.
- the common substrate can include silicon.
- the Lamb wave element can include a piezoelectric layer that includes the same material as a piezoelectric layer of the bulk acoustic wave resonator.
- the material can include aluminum nitride.
- the bulk acoustic wave resonator and the Lamb wave element can share a cavity.
- the bulk acoustic wave resonator and the Lamb wave element can have separate cavities.
- the bulk acoustic wave resonator can be a solidly mounted resonator.
- the Lamb wave element can include a Bragg reflector.
- the Lamb wave element can include an interdigital transducer electrode on a piezoelectric layer and gratings disposed on the piezoelectric layer on opposing sides of the interdigital transducer electrode.
- the Lamb wave element can include an interdigital transducer electrode on a piezoelectric layer, in which the interdigital transducer electrode has free edges.
- a radio frequency module that includes an acoustic wave device and a radio frequency switch.
- the acoustic wave device includes a Lamb wave element and a bulk acoustic wave resonator.
- the bulk acoustic wave resonator and the Lamb wave element are implemented on a common substrate of a die.
- the bulk acoustic wave resonator is included in a band pass filter arranged to filter a radio frequency signal.
- the radio frequency switch is coupled to the band pass filter.
- the radio frequency switch is arranged to pass the radio frequency signal.
- the bulk acoustic wave resonator can be a film bulk acoustic wave resonator.
- the common substrate can be a silicon substrate.
- the Lamb wave element can include an aluminum nitride layer.
- the radio frequency front end includes an acoustic wave device.
- the acoustic wave device includes a Lamb wave element and a bulk acoustic wave resonator.
- the Lamb wave element and the bulk acoustic wave element are implemented on a common substrate of a die.
- the bulk acoustic wave resonator is included in a band pass filter arranged to filter a radio frequency signal.
- the antenna in communication with the band pass filter.
- the bulk acoustic wave resonator can be a film bulk acoustic wave resonator.
- the common substrate can be a silicon substrate.
- the Lamb wave element can include an aluminum nitride layer.
- Another aspect of this disclosure is an acoustic wave filter that includes a Lamb wave resonator and a second acoustic wave resonator electrically coupled to the Lamb wave resonator.
- the second acoustic wave resonator is a different type of acoustic wave resonator than the Lamb wave resonator.
- the acoustic wave filter configured to filter a radio frequency signal.
- the Lamb wave resonator and the second acoustic wave resonator can be implemented on a common substrate of a die.
- the common substrate can be a silicon substrate.
- the Lamb wave resonator can include a piezoelectric layer that includes the same material as a piezoelectric layer of the second acoustic wave resonator.
- the piezoelectric layer of the Lamb wave resonator can be an aluminum nitride layer.
- the second acoustic wave resonator can be a film bulk acoustic wave resonator.
- the Lamb wave resonator and the film bulk acoustic wave resonator can share a cavity.
- the Lamb wave resonator and the film bulk acoustic wave resonator can include separate cavities.
- the second acoustic wave resonator can be a surface acoustic wave resonator.
- the Lamb wave resonator can be a series resonator and the second acoustic wave resonator can be a shunt resonator.
- the Lamb wave resonator can be a shunt resonator and the second acoustic wave resonator can be a series resonator.
- the acoustic wave filter can further include a plurality of additional acoustic wave resonators.
- the additional acoustic wave resonators can be the same type of acoustic wave resonator as the second acoustic wave resonator.
- the acoustic wave filter can include a first number of acoustic wave resonators that are the same type of acoustic wave resonator as the second acoustic wave resonator, in which the first number being at least twice as many as a second number of one or more Lamb wave resonators of the acoustic wave filter.
- a wireless communication device that includes an acoustic wave filter and an antenna in communication with the acoustic wave filter.
- the acoustic wave filter is configured to filter a radio frequency signal.
- the acoustic wave filter includes a Lamb wave resonator and a second of acoustic wave resonator.
- the Lamb wave resonator and the second acoustic wave resonator are implemented on a common substrate.
- the second acoustic wave resonator is a different type of acoustic wave resonator than the Lamb wave resonator;
- the second type of acoustic wave resonator can be a film bulk acoustic wave resonator, and the Lamb wave resonator can include a piezoelectric layer that includes the same material as a piezoelectric layer of the film bulk wave resonator.
- an acoustic wave filter assembly that includes a first acoustic wave filter and a second acoustic wave filter.
- the first acoustic wave filter is configured to filter a first radio frequency signal.
- the first acoustic wave filter includes a Lamb wave resonator implemented on a substrate of a die.
- the second acoustic wave filter is configured to filter a second radio frequency signal.
- the second acoustic wave filter including an acoustic wave resonator implemented on the same substrate of the die as the Lamb wave resonator.
- the acoustic wave resonator is a different type of acoustic wave resonator than the Lamb wave resonator.
- the acoustic wave resonator can be a film bulk acoustic wave resonator.
- the Lamb wave resonator can include a piezoelectric layer that includes the same material as a piezoelectric layer of the acoustic wave resonator.
- the first acoustic wave filter and the second acoustic wave filter can be e coupled together at a common node of a multiplexer.
- the multiplexer can be a duplexer.
- the present disclosure relates to U.S. patent application Ser. No. 16/287,802, titled “LAMB WAVE LOOP CIRCUIT FOR ACOUSTIC WAVE FILTER,” filed on Feb. 27, 2019, the entire disclosure of which is hereby incorporated by reference herein.
- the present disclosure relates to U.S. patent application Ser. No. 16/287,891, titled “LAMB WAVE ELEMENT AND BULK ACOUSTIC WAVE RESONATOR ON COMMON SUBSTRATE,” filed on Feb. 27, 2019, the entire disclosure of which is hereby incorporated by reference herein.
- FIG. 1A is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and a film bulk acoustic resonator (FBAR) on a common substrate according to an embodiment.
- FBAR film bulk acoustic resonator
- FIG. 1B is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and an FBAR on a common substrate according to another embodiment.
- FIG. 1C is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and an FBAR on a common substrate according to another embodiment.
- FIG. 1D is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and an FBAR on a common substrate according to another embodiment.
- FIG. 2 is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and a solidly mounted resonator (SMR) on a substrate according to an embodiment.
- SMR solidly mounted resonator
- FIG. 3A is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and a surface acoustic wave (SAW) resonator of an acoustic on a common substrate according to an embodiment.
- SAW surface acoustic wave
- FIG. 3B is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and a SAW resonator of an acoustic on a common substrate according to another embodiment.
- FIG. 4A is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and a Lamb wave resonator on a common substrate according to an embodiment.
- FIG. 4B is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and a Lamb wave resonator on a common substrate according to another embodiment.
- FIG. 5A is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and a solidly mounted Lamb wave resonator on a common substrate according to an embodiment.
- FIG. 5B is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and a solidly mounted Lamb wave resonator on a common substrate according to another embodiment.
- FIG. 5C is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and a solidly mounted Lamb wave resonator on a common substrate according to another embodiment.
- FIG. 5D is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and a solidly mounted Lamb wave resonator on a common substrate according to another embodiment.
- FIG. 6 is a diagram of cross section of an acoustic wave device that includes a solidly mounted Lamb wave element and an FBAR on a common substrate according to an embodiment.
- FIG. 7 is a diagram of cross section of an acoustic wave device that includes a solidly mounted Lamb wave element and an SMR on a common substrate according to an embodiment.
- FIG. 8 is a diagram of cross section of an acoustic wave device that includes a solidly mounted Lamb wave element and a SAW resonator on a common substrate according to an embodiment.
- FIG. 9 is a diagram of cross section of an acoustic wave device that includes a solidly mounted Lamb wave element and a Lamb wave resonator on a common substrate according to an embodiment.
- FIG. 10 is a diagram of cross section of an acoustic wave device that includes a solidly mounted Lamb wave element and a solidly mounted Lamb wave resonator on a common substrate according to an embodiment.
- FIGS. 11A to 11F are diagrams of cross sections of Lamb wave elements with gratings.
- FIG. 11A illustrates a Lamb wave element with a grounded electrode.
- FIG. 11B illustrates a Lamb wave element with a floating electrode.
- FIG. 11C illustrates a Lamb wave element without an electrode on a side of a piezoelectric layer that opposes an interdigital transducer (IDT) electrode.
- FIG. 11D illustrates another Lamb wave element.
- IDT interdigital transducer
- FIG. 11E illustrates another Lamb wave element.
- FIG. 11F illustrates another Lamb wave element.
- FIGS. 12A to 12F are diagrams of cross sections of Lamb wave elements with free edges.
- FIG. 12A illustrates a Lamb wave element with a grounded electrode.
- FIG. 12B illustrates a Lamb wave element with a floating electrode.
- FIG. 12C illustrates a Lamb wave element without an electrode on a side of a piezoelectric layer that opposes an IDT electrode.
- FIG. 12D illustrates another Lamb wave element.
- FIG. 12E illustrates another Lamb wave element.
- FIG. 12F illustrates another Lamb wave element.
- FIG. 13 is a schematic diagram of a duplexer with a loop circuit for a transmit filter according to an embodiment.
- FIG. 14 is a graph comparing isolation for the duplexer of FIG. 13 to a corresponding duplexer without a loop circuit.
- FIG. 15 is a schematic diagram of a duplexer with a loop circuit for a receive filter according to an embodiment.
- FIG. 16A is a graph comparing isolation for the duplexer of FIG. 15 to a corresponding duplexer without a loop circuit.
- FIG. 16B is a graph comparing receive band rejection for the duplexer of FIG. 15 to a corresponding duplexer without a loop circuit.
- FIG. 17 is a schematic diagram of a duplexer with a first loop circuit for a transmit filter and a second loop circuit for a receive filter according to an embodiment.
- FIG. 18 is a graph comparing isolation for the duplexer of FIG. 17 to a corresponding duplexer without loop circuits.
- FIG. 19 is a schematic diagram of a duplexer with a loop circuit coupled between a transmit port of a transmit filter and a receive port of a receive filter according to an embodiment.
- FIG. 20 is a schematic diagram of an acoustic wave filter assembly that includes a first filter with a Lamb wave resonator and a second filter with a different type of acoustic wave resonator, in which the Lamb wave resonator and the different type of resonator are implemented on the same substrate according to an embodiment.
- FIG. 21A is a schematic diagram of an acoustic wave filter that includes series Lamb wave resonators and other shunt acoustic wave resonators according to an embodiment.
- FIG. 21B is a schematic diagram of an acoustic wave filter that includes shunt Lamb wave resonators and other series acoustic wave resonators according to an embodiment.
- FIG. 21C is a schematic diagram of an acoustic wave filter that includes a series Lamb wave resonator and other acoustic wave resonators coupled to an antenna port via the series Lamb wave resonator according to an embodiment.
- FIG. 21D is a schematic diagram of an acoustic wave filter that includes a series Lamb wave resonator and other acoustic wave resonators coupled to a radio frequency port via the series Lamb wave resonator according to an embodiment.
- FIG. 21E is a schematic diagram of an acoustic wave filter that includes a series Lamb wave resonator and other acoustic wave resonators according to an embodiment.
- FIG. 21F is a schematic diagram of an acoustic wave filter that includes a shunt Lamb wave resonator and other acoustic wave resonators according to an embodiment.
- FIG. 22A is a schematic block diagram of a module that includes an antenna switch and a duplexer with a Lamb wave loop circuit according to an embodiment.
- FIG. 22B is a schematic block diagram of a module that includes an antenna switch and a plurality of filters with a Lamb wave loop circuit according to an embodiment.
- FIG. 22C is a schematic block diagram of a module that includes a power amplifier, a switch, and a duplexer with a Lamb wave loop circuit according to an embodiment.
- FIG. 22D is a schematic block diagram of a module that includes power amplifier, a switch, a duplexer with a Lamb wave loop circuit, and an antenna switch according to an embodiment.
- FIG. 23A is a schematic block diagram of a module that includes an antenna switch and one or more filters that include a Lamb wave resonator and another type of acoustic wave resonator according to an embodiment.
- FIG. 23B is a schematic block diagram of a module that includes a power amplifier, a switch, and one or more filters that include a Lamb wave resonator and another type of acoustic wave resonator according to an embodiment.
- FIG. 23C is a schematic block diagram of a module that includes power amplifier, a switch, one or more filters that include a Lamb wave resonator and another type of acoustic wave resonator, and an antenna switch according to an embodiment.
- FIG. 24 is a schematic block diagram of a wireless communication device that includes a filter with a lamb wave element according to an embodiment.
- An acoustic wave filter can include a loop circuit to cancel an unwanted frequency component.
- the loop circuit can enhance transmit/receive isolation and attenuation for a particular frequency range.
- the loop circuit can apply a signal having approximately the same amplitude and an opposite phase to a signal component to be canceled.
- Surface acoustic wave (SAW) loops circuits have been used to suppress isolation and attenuation in SAW filters.
- Some loop circuits for film bulk acoustic resonator (FBAR) filters and other bulk acoustic wave (BAW) filters have included LC circuits.
- Such LC circuits can include capacitor(s) and/or inductor(s) having a relatively large physical footprint and/or can be implemented external to a chip that includes the BAW filter coupled to the loop circuit.
- Lamb wave loop circuits are disclosed. Lamb wave loop circuits can be integrated with BAW filters and/or duplexers. For instance, aluminum nitride (AlN) Lamb wave loop circuits can be integrated with aluminum nitride FBAR filters. Such Lamb wave loop circuits can suppress transmit/receive (Tx/Rx) isolation and attenuation at any desired frequency range. A Lamb wave loop circuit can generate an anti-phase radio frequency (RF) signal to cancel a target signal at a desired frequency.
- RF radio frequency
- the Lamb wave loop circuits discussed herein can improve the isolation and attenuation of RF acoustic wave filters, such as BAW filters (e.g., FBAR filters or SMR filters), SAW filters, and Lamb wave filters.
- a Lamb wave element can be a Lamb wave resonator or a Lamb wave delay line.
- a Lamb wave element can combine features of a SAW element and a BAW element.
- a Lamb wave resonator typically includes an interdigital transducer (IDT) electrode similar to a SAW resonator. Accordingly, the frequency of the Lamb wave resonator can be lithographically defined.
- a Lamb wave element can achieve a relatively high quality factor (Q) and a relatively high phase velocity like a BAW filter. The relatively high Q of a Lamb wave resonators can be due to, for example, a suspended structure.
- a Lamb wave element that includes an aluminum nitride piezoelectric layer can be relatively easy to integrate with other circuits, for example, because aluminum nitride process technology can be compatible with complementary metal oxide semiconductor (CMOS) process technology.
- CMOS complementary metal oxide semiconductor
- Aluminum nitride Lamb wave resonators can overcome a relatively low resonance frequency limitation and integration challenge associated with SAW resonators and also overcome multiple frequency capability challenges associated with BAW resonators.
- Some Lamb wave resonator topologies are based on acoustic reflection from periodic reflective gratings.
- Some other Lamb wave resonator topologies are based on acoustic reflection from suspended free edges of a piezoelectric layer.
- a Lamb wave loop circuit and a BAW resonator of an acoustic wave filter can be implemented on a common substrate.
- An aluminum nitride Lamb wave loop circuit can be directly integrated with aluminum nitride FBAR filter and/or other BAW filters during processing to form such filters. Such integration can also be achieved for other suitable piezoelectric films.
- a Lamb wave loop circuit can have offer a cost effective and efficient way to include a loop circuit for a BAW filter.
- a Lamb wave loop circuit integrated with a BAW filter can be manufactured with characteristics sufficient for a loop circuit in a cost effective manner.
- a Lamb wave loop circuit for a BAW filter can be implemented in a relatively small physical footprint. For example, a Lamb wave loop circuit can have a smaller physical footprint than an LC circuit based loop circuit. A smaller physical footprint can reduce power consumption and/or reduce manufacturing costs.
- Lamb wave elements in a loop circuit discussed herein can operate in any suitable acoustic wave mode.
- Example acoustic wave modes that can be utilized in Lamb wave elements discussed herein include the lowest-order asymmetric (A a ) mode, the lowest-order symmetric (S 0 ) mode, the lowest-order shear horizontal (SH 0 ) mode, the first-order asymmetric (A 1 ) mode, the first-order symmetric (S 1 ) mode, the first-order shear horizontal (SH 1 ) mode, the second-order asymmetric (A 2 ) mode, the second-order symmetric (S 2 ) mode, the second-order shear horizontal (SH 2 ) mode, and the like.
- a Lamb wave element and a different type of acoustic wave resonator can be implemented on the same substrate of a die.
- the Lamb wave element can be included in a loop circuit and the different element can be in an acoustic wave filter coupled to the loop circuit.
- a Lamb wave element and a different type of acoustic wave element on a common substrate can be implemented in a variety of other applications.
- an acoustic wave filter can include a Lamb wave resonator and a different type of acoustic wave resonator implemented on the same die.
- an acoustic wave filter can include a Lamb wave resonator and an FBAR implemented on a common substrate.
- a first acoustic wave filter can include a Lamb wave resonator and a second acoustic wave filter can include a different type of acoustic wave resonator, in which the Lamb wave resonator and the different type of acoustic wave resonator are implemented on a common substrate.
- a loop circuit can include a free-standing Lamb wave element.
- a Lamb wave element and a resonator of an acoustic wave filter coupled to the loop circuit can be implemented in accordance with any suitable principles and advantages of the acoustic wave devices of FIGS. 1A to 5D .
- the acoustic wave devices of FIGS. 1A to 5D can also be implemented in other applications. Any suitable combination of features of the acoustic wave devices of FIGS. 1A to 5D can be implemented together with each other.
- FIG. 1A is a diagram of cross section of an acoustic wave device 10 that includes a film bulk acoustic resonator (FBAR) 12 and a Lamb wave element 14 according to an embodiment.
- the FBAR 12 and the Lamb wave element 14 are implemented on a common substrate 19 .
- the FBAR 12 can be included in an acoustic wave filter and the Lamb wave element 14 can be included in a loop circuit.
- the FBAR 12 includes electrodes 13 A and 13 B on opposing sides of a piezoelectric substrate 15 .
- the Lamb wave element 14 can be a Lamb wave resonator in certain instances.
- a Lamb wave resonator is a type of acoustic wave resonator.
- the Lamb wave element 14 can be a delay line in some instances.
- a Lamb wave delay line can include two sets of interdigital transducers.
- the Lamb wave element 14 includes feature of a SAW resonator and an FBAR. As illustrated, the Lamb wave element 14 includes a piezoelectric layer 15 , an interdigital transducer electrode (IDT) electrode 16 on the piezoelectric layer 15 , and an electrode 17 .
- the piezoelectric layer 15 can be a thin film.
- the piezoelectric layer 15 can be an aluminum nitride layer. In other instances, the piezoelectric layer 15 can be any suitable piezoelectric layer.
- the piezoelectric layer 15 can be a lithium niobate layer or a lithium tantalate layer.
- the frequency of the Lamb wave resonator can be based on the geometry of the IDT electrode 16 .
- the illustrated IDTs of the Lamb wave element 14 represent two sets of IDTs.
- the electrode 17 can be grounded in certain instances. In some other instances, the electrode 17 can be floating.
- An air cavity 18 is disposed between the electrode 17 and a substrate 19 . Any suitable cavity can be implemented in place of the air cavity 18 .
- the substrate 19 can be a semiconductor substrate.
- the substrate 19 can be a silicon substrate.
- the substrate 19 can be any other suitable substrate, such as a quartz substrate, a sapphire substrate, or a spinel substrate.
- the Lamb wave resonator 14 and the FBAR 12 share a piezoelectric layer 15 .
- a first portion of the piezoelectric layer 15 can be considered the piezoelectric layer of the FBAR 12 and a second portion of the piezoelectric layer 15 can be considered the piezoelectric layer of the Lamb wave element 14 .
- the Lamb wave resonator 14 and the FBAR share an air cavity 18 . In certain applications, sharing an air cavity 18 can reduce the size of an acoustic wave device relative to implementing separate air cavities.
- the Lamb wave resonator 14 and the FBAR 12 can be disposed on a common semiconductor substrate 19 .
- the semiconductor substrate 19 can be a silicon substrate.
- FIG. 1B is a diagram of cross section of an acoustic wave device 10 ′ that includes an FBAR 12 ′ and a Lamb wave element 14 ′ according to an embodiment.
- the acoustic wave device 10 ′ is like the acoustic wave device 10 of FIG. 1A except that separate air cavities 18 A and 18 B are included in the acoustic wave device 10 ′ for the FBAR 12 ′ and the Lamb wave element 14 ′, respectively.
- a first air cavity 18 A is provided for the FBAR 12 ′ and a second air cavity 18 B is provided for the Lamb wave element 14 ′.
- having separate air cavities can be beneficial for maintaining the mechanical integrity of the acoustic wave device 10 ′ and/or reducing cross talk between the FBAR 12 and the Lamb wave element 14 .
- FIG. 1C is a diagram of cross section of an acoustic wave device 10 ′′ that includes an FBAR 12 ′′ and a Lamb wave element 14 ′′ according to an embodiment.
- the acoustic wave device 10 ′′ is like the acoustic wave device 10 of FIG. 1A except that an air cavity is implemented in the substrate 19 ′ instead of over the substrate 19 of FIG. 1A .
- An air cavity 18 ′ can be implemented for the acoustic wave device 10 ′′ by etching a portion of the substrate 19 ′.
- FIG. 1D is a diagram of cross section of an acoustic wave device 10 ′′′ that includes an FBAR 12 ′′′ and a Lamb wave element 14 ′′′ according to an embodiment.
- the acoustic wave device 10 ′′′ is like the acoustic wave device 10 ′ of FIG. 1B except that air cavities are implemented in the substrate 19 ′′ instead of over the substrate 19 of FIG. 1B .
- the air cavities 18 A′ and 18 B′ can be implemented for the acoustic wave device 10 ′′′ by etching portions of the substrate 19 ′′.
- FIG. 2 is a diagram of cross section of an acoustic wave device 20 that includes a Lamb wave element 14 and a solidly mounted resonator (SMR) 22 according to an embodiment.
- the SMR 22 and the Lamb wave element 14 are implemented on a common substrate 19 .
- the SMR 22 can be included in an acoustic wave filter and the Lamb wave element 14 can be included in a loop circuit.
- the SMR 22 and the Lamb wave element 14 can include the same piezoelectric material, such as aluminum nitride (AlN).
- a piezoelectric layer 15 ′ of the acoustic wave device 20 can include a first portion that serves as a piezoelectric layer for the Lamb wave element 14 and a second portion that serves as a piezoelectric layer for the SMR 22 .
- the piezoelectric layer 15 ′ can have a different shape than the piezoelectric layer 15 in the acoustic wave device 10 of FIG. 1A .
- the SMR 22 includes an acoustic mirror located between the substrate 19 and the electrode 13 B.
- the illustrated acoustic mirror includes Bragg reflectors 24 .
- the Bragg reflectors 24 include alternating low impedance and high impedance layers 25 and 26 , respectively.
- the Bragg reflectors 24 can include silicon dioxide (SiO 2 ) layers and tungsten (W) layers.
- the Bragg reflectors 24 can include silicon dioxide layers and molybdenum (Mo) layers. Any other suitable Bragg reflectors can alternatively or additionally be included in the SMR 22 .
- the Lamb wave element 14 of FIG. 2 includes its own an air cavity 18 B.
- the Lamb wave element 14 and the SMR 22 can be disposed on a common substrate 19 .
- the substrate 19 can be a semiconductor substrate.
- the substrate 19 can be a silicon substrate.
- the substrate 19 can be any other suitable substrate disclosed herein.
- FIG. 3A is a diagram of cross section of an acoustic wave device 30 that includes a Lamb wave element 14 and a surface acoustic wave (SAW) resonator 32 according to an embodiment.
- the SAW resonator 32 and the Lamb wave element 14 are implemented on a common substrate 19 .
- the SAW resonator 32 can be included an acoustic wave filter and the Lamb wave element can be included in a loop circuit.
- the SAW resonator 32 can include any suitable piezoelectric layer, such as an aluminum nitride layer, a lithium niobate layer, a lithium tantalate layer, or any suitable combination thereof.
- the SAW resonator 32 and the Lamb wave element 14 can include the same piezoelectric material, such as aluminum nitride, lithium niobate or lithium tantalate.
- a piezoelectric layer 15 ′′ of the acoustic wave device 30 can include a first portion that serves as a piezoelectric layer for the Lamb wave element 14 and a second portion that serves as a piezoelectric layer for the SAW resonator 32 .
- the SAW resonator 32 includes an IDT electrode 34 on the piezoelectric layer 15 ′.
- the piezoelectric layer 15 ′′ can have a different shape than the piezoelectric layer 15 in the acoustic wave device 10 of FIG. 1A .
- the Lamb wave element 14 and the SAW 32 can be disposed on a common substrate 19 .
- the substrate 19 can be a semiconductor substrate, such as a silicon substrate.
- FIG. 3B is a diagram of cross section of an acoustic wave device 30 ′ that includes a Lamb wave element 14 and an SAW resonator 32 ′ according to an embodiment.
- the acoustic wave device 30 ′ is like the acoustic wave device 30 of FIG. 3A except that the respective piezoelectric layers 15 ′′ and 35 of the Lamb wave element 14 and the SAW resonator 32 ′ include different piezoelectric material.
- the SAW resonator 32 ′ can include a lithium niobate piezoelectric layer 35 and the Lamb wave element 14 can include a lithium niobate piezoelectric layer 15 ′′.
- the SAW resonator 32 ′ can include a lithium tantalate piezoelectric layer 35 and the Lamb wave element 14 can include a lithium tantalate piezoelectric layer 15 ′′.
- acoustic wave devices 30 and 30 ′ are illustrated with a Lamb wave element that includes a cavity 18 B over the substrate 19 , similar acoustic wave devices can be implemented with a cavity in the substrate (e.g., like the cavity 18 B′ of FIG. 1B ).
- FIG. 4A is a diagram of cross section of an acoustic wave device 40 that includes a Lamb wave element 14 and a Lamb wave resonator 42 according to an embodiment.
- the Lamb wave resonator 42 and the Lamb wave element 14 are implemented on a common substrate 19 .
- the Lamb wave resonator 42 can be included in an acoustic wave filter and the Lamb wave element 14 can be included in a loop circuit.
- the Lamb wave resonator 42 can have the same or similar structure as the Lamb wave element 14 .
- the Lamb wave element 14 can include two sets of IDTs and the Lamb wave resonator 42 can include a single set of IDTs.
- the Lamb wave element 14 and The Lamb wave resonator 42 can share a piezoelectric layer 15 . As shown in FIG. 4A , the Lamb wave element 14 and The Lamb wave resonator 42 can share an air cavity 18 . In certain applications, sharing an air cavity 18 can reduce the size of an acoustic wave device relative to implementing separate air cavities.
- FIG. 4B is a diagram of cross section of an acoustic wave device 40 ′ that includes a Lamb wave element 14 and a Lamb wave resonator 42 according to an embodiment.
- the acoustic wave device 40 ′ is like the acoustic wave device 40 of FIG. 4A except that separate air cavities 18 A and 18 B are included in the acoustic wave device 40 ′ for the Lamb wave resonator 42 and the Lamb wave element 14 , respectively.
- a first air cavity 18 A is provided for the Lamb wave resonator 42 and a second air cavity 18 B is provided for the Lamb wave element 14 .
- having separate air cavities can be beneficial for maintaining the mechanical integrity of the acoustic wave device 40 ′ and/or reducing cross talk between the Lamb wave resonator 42 and the Lamb wave element 14 .
- FIG. 5A is a diagram of cross section of an acoustic wave device 50 that includes a Lamb wave element 14 and a solidly mounted Lamb wave resonator 52 according to an embodiment.
- the solidly mounted Lamb wave resonator 52 and the Lamb wave element 14 are implemented on a common substrate 19 .
- the solidly mounted Lamb wave resonator 52 can be included in an acoustic wave filter and the Lamb wave element 14 can be included in a loop circuit.
- the solidly mounted Lamb wave resonator 52 and the Lamb wave element 14 can include the same piezoelectric material, such as aluminum nitride.
- a piezoelectric layer 15 ′ of the acoustic wave device 50 can include a first portion that serves as a piezoelectric layer for the Lamb wave element 14 and a second portion that serves as a piezoelectric layer for the solidly mounted Lamb wave resonator 52 .
- the solidly mounted Lamb wave resonator 52 includes features of a SAW resonator and an SMR.
- the solidly mounted Lamb wave resonator 52 includes a lower electrode 53 , a piezoelectric layer, an IDT electrode 54 on the piezoelectric layer, and an acoustic mirror located between the substrate 19 and the electrode 53 .
- the illustrated acoustic mirror includes Bragg reflectors 56 .
- the Bragg reflectors 56 include alternating low impedance and high impedance layers 57 and 58 , respectively.
- the Bragg reflectors 56 can include silicon dioxide layers and tungsten layers. Any other suitable Bragg reflectors can alternatively or additionally be included in the solidly mounted Lamb wave resonator 52 .
- the solidly mounted Lamb wave resonator 52 can include an aluminum nitride piezoelectric layer, for example.
- FIG. 5B is a diagram of cross section of an acoustic wave device 50 ′ that includes a Lamb wave element 14 and solidly mounted Lamb wave resonator 52 according to an embodiment.
- the acoustic wave device 50 ′ is like the acoustic wave device 50 of FIG. 5A except that the respective piezoelectric layers 15 ′ and 59 of the Lamb wave element 14 and the solidly mounted Lamb wave resonator 52 include different piezoelectric material.
- FIG. 5C is a diagram of cross section of an acoustic wave device 50 ′′ that includes a Lamb wave element 14 and solidly mounted Lamb wave resonator 52 according to an embodiment.
- the acoustic wave device 50 ′′ is like the acoustic wave device 50 of FIG. 5A except that an air cavity 18 B′ is implemented in the substrate 19 instead of over the substrate 19 of FIG. 5A .
- the air cavity 18 B′ can be implemented for the acoustic wave device 50 ′′ by etching a portion of the substrate 19 ′.
- FIG. 5D is a diagram of cross section of an acoustic wave device 50 ′ that includes a Lamb wave element 14 and solidly mounted Lamb wave resonator 52 according to an embodiment.
- the acoustic wave device 50 ′ is like the acoustic wave device 50 ′′ of FIG. 5C except that the respective piezoelectric layers 15 ′ and 59 of the Lamb wave element 14 and the solidly mounted Lamb wave resonator 52 include different piezoelectric material.
- a loop circuit can include a solidly mounted Lamb wave element.
- a Lamb wave element and a resonator of an acoustic wave filter coupled to the loop circuit can be implemented in accordance with any suitable principles and advantages of the acoustic wave devices of FIGS. 6 to 10 .
- the acoustic wave devices of FIGS. 6 to 10 can also be implemented in other applications. Any suitable combination of features of acoustic wave devices of FIGS. 6 to 10 can be implemented together with each other.
- FIG. 6 is a diagram of cross section of an acoustic wave device 60 that includes a solidly mounted Lamb wave element 64 and an FBAR 12 ′ according to an embodiment.
- the FBAR 12 ′ and the solidly mounted Lamb wave element 64 are implemented on a common substrate 19 .
- the FBAR 12 ′ can be included in an acoustic wave filter and the solidly mounted Lamb wave element 64 can be included in a loop circuit.
- the solidly mounted Lamb wave element 64 can be a solidly mounted Lamb wave resonator in certain instances.
- the solidly mounted Lamb wave element 64 can be a delay line in some instances.
- a Lamb wave delay line can include two sets of interdigital transducers.
- the Lamb wave element 64 includes feature of a SAW resonator and an SMR. As illustrated, the Lamb wave element 64 includes a piezoelectric layer 15 ′′′, an IDT electrode 16 on the piezoelectric layer 15 ′′′, and an electrode 17 .
- the piezoelectric layer 15 ′′′ can be an aluminum nitride layer. In other instances, the piezoelectric layer 15 ′′′ can be any other suitable piezoelectric layer.
- the frequency of the Lamb wave element 64 can be based on the geometry of the IDT electrode 16 .
- the electrode 17 can be grounded in certain instances. In some other instances, the electrode 17 can be floating.
- the Lamb wave element 64 includes an acoustic mirror located between the substrate 19 and the electrode 17 .
- the illustrated acoustic mirror includes Bragg reflectors 65 .
- the Bragg reflectors 65 include alternating low impedance and high impedance layers 66 and 67 , respectively.
- the Bragg reflectors 65 can include silicon dioxide layers and tungsten layers.
- the Bragg reflectors 65 can include silicon dioxide layers and molybdenum layers. Any other suitable Bragg reflectors can alternatively or additionally be included in the Lamb wave element 64 .
- the Lamb wave element 64 and the FBAR 12 ′ can share a piezoelectric layer 15 ′′′.
- the Lamb wave element 64 and the FBAR 12 ′ can include piezoelectric layers of different material.
- the piezoelectric layer 15 ′′′ can have a different shape than piezoelectric layers in other embodiments that have different resonator combinations.
- the Lamb wave element 64 and the FBAR 12 ′ can be disposed on a common substrate 19 .
- the substrate 19 can be a semiconductor substrate.
- the substrate 19 can be a semiconductor substrate.
- the substrate 19 can be any other suitable substrate, such as a quartz substrate, a sapphire substrate, or a spinel substrate.
- FIG. 7 is a diagram of cross section of an acoustic wave device 70 that includes a solidly mounted Lamb wave element 64 and an SMR 22 according to an embodiment.
- the SMR 22 and the Lamb wave element 64 are implemented on a common substrate 19 .
- the SMR 22 can be included in an acoustic wave filter and the Lamb wave element 64 can be included in a loop circuit.
- the solidly mounted Lamb wave element 64 is structurally similar to the SMR 22 , except that the solidly mounted Lamb wave element 64 includes an IDT electrode 16 and the SMR 22 includes an electrode 13 A having a different shape than the IDT electrode 16 over the piezoelectric layer 15 ′.
- the Bragg reflectors 65 for the solidly mounted Lamb wave element 64 and the Bragg reflectors 24 for the SMR 22 can be separated by material of the substrate 19 .
- semiconductor material of a semiconductor substrate 19 can separate Bragg reflectors 24 from Bragg reflectors 65 .
- the Bragg reflectors 65 and 24 can include the same materials in certain applications.
- the Bragg reflectors 65 and 24 can include different materials in certain applications.
- Bragg reflectors can form a common acoustic mirror below the Lamb wave element 64 and the SMR 22 .
- the piezoelectric layers 15 ′′′ and 68 of the solidly mounted Lamb wave element 64 and the SMR 22 respectively, can include the same piezoelectric material in certain applications.
- the piezoelectric layers 15 ′′′ and 68 of the solidly mounted Lamb wave element 64 and the SMR 22 can include different piezoelectric material in various applications.
- FIG. 8 is a diagram of cross section of an acoustic wave device 80 that includes a solidly mounted Lamb wave element 64 and a SAW resonator 32 according to an embodiment.
- the solidly mounted Lamb wave element 64 and the SAW resonator 32 can be on a common substrate 19 .
- the SAW resonator 32 can be included in an acoustic wave filter and the Lamb wave element 64 can be included in a loop circuit.
- the piezoelectric layers 15 ′′′′ and 35 of the solidly mounted Lamb wave element 64 and the SAW resonator 32 can include the same piezoelectric material in certain applications.
- the piezoelectric layers 15 ′′′′ and 35 of the solidly mounted Lamb wave element 64 and the SAW resonator 32 can include different piezoelectric material in various applications.
- FIG. 9 is a diagram of cross section of an acoustic wave device 90 that includes a solidly mounted Lamb wave element 64 of and a Lamb wave resonator 42 ′ according to an embodiment.
- the Lamb wave resonator 42 ′ is a free-standing Lamb wave resonator.
- the solidly mounted Lamb wave element 64 and the Lamb wave resonator 42 ′ can include the same piezoelectric material, such as aluminum nitride, lithium niobate, or lithium tantalate. In some other applications, the solidly mounted Lamb wave element 64 and the Lamb wave resonator 42 ′ can include piezoelectric layers of different material.
- the solidly mounted Lamb wave element 64 and the Lamb wave resonator 42 ′ can be disposed on a common substrate 19 .
- the Lamb wave resonator 42 ′ can be included in an acoustic wave filter and the Lamb wave element 64 can be included in a loop circuit.
- FIG. 10 is a diagram of cross section of an acoustic wave device 100 that includes a solidly mounted Lamb wave element 64 and a solidly mounted Lamb wave resonator 52 according to an embodiment.
- These solidly mounted Lamb wave elements can be structurally similar or the same.
- the solidly mounted Lamb wave resonator 52 and the Lamb wave element 64 are implemented on a common substrate 19 .
- the solidly mounted Lamb wave resonator 52 can be included in an acoustic wave filter and the Lamb wave element 64 can be included in a loop circuit.
- Semiconductor material of the semiconductor substrate 19 can separate Bragg reflectors of these solidly mounted Lamb wave elements.
- the Bragg reflectors 65 and 56 can include the same materials in certain applications.
- the Bragg reflectors 65 and 56 can include different materials in certain applications. In some applications, Bragg reflectors can form a common acoustic mirror below the Lamb wave element 64 and the solidly mounted Lamb wave resonator 52 .
- the piezoelectric layers 15 ′′′ and 59 of the solidly mounted Lamb wave element 64 and the solidly mounted Lamb wave resonator 52 , respectively, can include the same piezoelectric material in certain applications.
- the piezoelectric layers 15 ′′′ and 68 of the solidly mounted Lamb wave element 64 and the solidly mounted Lamb wave resonator 52 can include different piezoelectric material in various applications.
- Lamb wave elements can include an IDT electrode on a piezoelectric layer and reflective gratings disposed on the piezoelectric layer on opposing sides of the IDT electrode.
- the reflective gratings can reflect acoustic waves induced by the IDT electrode to form a resonant cavity.
- the reflective gratings can include a periodic pattern of metal on a piezoelectric layer.
- FIGS. 11A to 11F are diagrams of cross sections of Lamb wave elements with gratings.
- a Lamb wave element in a loop circuit can be implemented with any suitable principles and advantages of any of the Lamb wave elements of FIGS. 11A to 11F .
- a Lamb wave resonator in a filter can be implemented with any suitable principles and advantages of any of the Lamb wave elements of FIGS. 11A to 11F .
- the Lamb wave elements of FIGS. 11A to 11F are free-standing resonators, any suitable principles and advantages of these Lamb wave resonators can be applied to any other suitable Lamb wave elements.
- FIG. 11A illustrates a Lamb wave element 110 that includes an IDT electrode 112 , gratings 113 and 114 , a piezoelectric layer 115 , and an electrode 116 .
- the IDT electrode 112 is on the piezoelectric layer 115 .
- alternate ground and signal metals are included in the IDT electrodes.
- Gratings 113 and 115 are on the piezoelectric layer 115 and disposed on opposing sides of the IDT electrodes 112 .
- the illustrated gratings 113 and 115 are shown as being connected to ground. Alternatively, one or more of the gratings can be signaled and/or floating.
- the electrode 116 and the IDT electrode 112 are on opposite sides of the piezoelectric layer 115 .
- the piezoelectric layer 115 can be aluminum nitride, for example.
- the electrode 116 can be grounded.
- FIG. 11B illustrates a Lamb wave element 110 ′.
- the Lamb wave element 110 ′ is like the Lamb wave element 110 of FIG. 11A except that the Lamb wave element 110 ′ includes a floating electrode 116 ′.
- FIG. 11C illustrates a Lamb wave element 110 ′′ without an electrode on a side of the piezoelectric layer 115 that opposes the IDT electrode 112 .
- the Lamb wave element 110 ′′ is otherwise like the Lamb wave element 110 of FIG. 11A .
- FIG. 11D illustrates a Lamb wave element 110 ′′′ that includes an IDT electrode 117 and gratings 118 and 119 on a second side of the piezoelectric layer 115 that is opposite to a first side on which the IDT electrode 112 and gratings 113 and 114 are disposed.
- the signal and ground electrodes are offset relative to each other for the IDT electrodes 112 and 117 .
- FIG. 11E illustrates a Lamb wave element 110 ′′ that includes an IDT electrode 117 ′ and gratings 118 and 119 on a second side of the piezoelectric layer 115 that is opposite to a first side on which the IDT electrode 112 and gratings 113 and 114 are disposed.
- the signal and ground electrodes are aligned with each other for the IDT electrodes 112 and 117 ′.
- FIG. 11F illustrates a Lamb wave element 110 ′′ “‘ that includes an IDT electrode 117 ” and gratings 118 and 119 on a second side of the piezoelectric layer 115 that is opposite to a first side on which the IDT electrode 112 ’ and gratings 113 and 114 are disposed.
- the IDT 112 ′ includes only signal electrodes and the IDT electrode 117 ′′ includes only ground electrodes.
- Lamb wave elements can include an IDT electrode with free edges. Suspended free edges of a piezoelectric layer can provide acoustic wave reflection to form a resonant cavity.
- FIGS. 12A to 12F are diagrams of cross sections of Lamb wave elements with free edges.
- a Lamb wave element in a loop circuit can be implemented with any suitable principles and advantages of any of the Lamb wave elements of FIGS. 12A to 12F .
- a Lamb wave resonator in a filter can be implemented with any suitable principles and advantages of any of the Lamb wave elements of FIGS. 12A to 12F .
- the Lamb wave elements of FIGS. 12A to 12F are free-standing elements, any suitable principles and advantages of these Lamb wave elements can be applied to other Lamb wave elements.
- FIG. 12A illustrates a Lamb wave element 120 that includes IDT electrode 112 , piezoelectric layer 115 , and an electrode 116 .
- the IDT electrode 112 is on the piezoelectric layer 115 .
- alternate ground and signal electrodes are included in the IDT electrodes.
- the piezoelectric layer 115 has free edges on opposing sides of the IDT electrode 112 .
- the electrode 116 and the IDT electrode 112 are on opposite sides of the piezoelectric layer 115 .
- the piezoelectric layer 115 can be aluminum nitride, for example.
- the electrode 116 can be grounded.
- FIG. 12B illustrates a Lamb wave element 120 ′.
- the Lamb wave element 120 ′ is like the Lamb wave element 120 of FIG. 12A except that the Lamb wave element 120 ′ includes a floating electrode 116 ′.
- FIG. 12C illustrates a Lamb wave element 120 ′′ without an electrode on a side of the piezoelectric layer 115 that opposes the IDT electrode 112 .
- the Lamb wave element 120 ′′ is otherwise like the Lamb wave element 120 of FIG. 12A .
- FIG. 12D illustrates a Lamb wave element 120 ′′′ that includes an IDT electrode 117 on a second side of the piezoelectric layer 115 that is opposite to a first side on which the IDT electrode 112 is disposed.
- the signal and ground electrodes are offset relative to each other for the IDT electrodes 112 and 117 .
- FIG. 12E illustrates a Lamb wave element 120 ′′ that includes an IDT electrode 117 ′ on a second side of the piezoelectric layer 115 that is opposite to a first side on which the IDT electrode 112 is disposed.
- the signal and ground electrodes are aligned with each other for the IDT electrodes 112 and 117 ′.
- FIG. 12F illustrates a Lamb wave element 120 ′′′′′ that includes an IDT electrode 117 ′′ on a second side of the piezoelectric layer 115 that is opposite to a first side on which the IDT electrode 112 ′ is disposed.
- the IDT electrode 112 ′ includes only signal electrodes and the IDT electrode 117 ′′ includes only ground electrodes.
- FIGS. 13, 15, 17, and 19 are schematic diagrams that illustrate example duplexers that include a Lamb wave loop circuit coupled to an acoustic wave filter. Any suitable principles and advantages discussed with reference to and/or illustrated in FIGS. 1A to 12F can be applied to any of the example duplexers of FIGS. 13, 15, 17, and 19 . Any suitable principles and advantages of the embodiments of FIGS. 13, 15, 17, and 19 can be implemented together with each other.
- FIG. 13 is a schematic diagram of a duplexer 130 with a loop circuit 133 for a transmit filter 132 .
- the duplexer 130 includes a transmit filter 132 , a receive filter 134 , and a loop circuit 133 .
- the transmit filter 132 and the receive filter 134 are coupled together at a common node, which is an antenna node in FIG. 13 .
- An antenna 135 is coupled to the common node of the duplexer 130 .
- a shunt inductor L 1 can be coupled between the antenna 135 and ground.
- the transmit filter 132 can filter an RF signal received at the transmit port TX for transmission via the antenna 135 .
- a series inductor L 2 can be coupled between the transmit port TX and acoustic wave resonators of the transmit filter 132 .
- the transmit filter 132 is an acoustic wave filter that includes acoustic wave resonators arranged as a ladder filter.
- the transmit filter 132 includes series resonators T 01 , T 03 , T 05 , T 07 , T 09 and shunt resonators T 02 , T 04 , T 06 , T 08 .
- the transmit filter 132 can include any suitable number of series resonators and any suitable number of shunt resonators.
- the acoustic wave resonators of the transmit filter 132 can include BAW resonators, such as FBARs and/or SMRs. In some instances, the acoustic wave resonators of the transmit filter 132 can include SAW resonators or Lamb wave resonators. In certain applications, the resonators of the transmit filter 132 can include two or more types of resonators (e.g., one or more SAW resonators and one or more BAW resonators).
- a loop circuit 133 is coupled to the transmit filter 132 .
- the loop circuit 133 can be coupled to an input resonator T 01 and an output resonator T 09 of the transmit filter. In some other instances, the loop circuit 133 can be coupled to a different node of the ladder circuit than illustrated.
- the loop circuit 133 can apply a signal having approximately the same amplitude and an opposite phase to a signal component to be canceled.
- the loop circuit 133 includes Lamb wave elements 136 and 137 coupled to the transmit filter 132 by capacitors CAP 02 and CAP 01 , respectively.
- the Lamb wave elements 136 and 137 can together correspond to any suitable Lamb wave element disclosed herein.
- the Lamb wave elements 136 and 137 can together correspond to the Lamb wave element 14 of FIG.
- each Lamb wave element 136 and 137 corresponds to a different IDT electrode of the Lamb wave element 14 .
- the transmit filter 132 can include an FBAR implemented on the same substrate of a die as the Lamb wave element 14 .
- the capacitors CAP 01 and CAP 02 are example attenuation elements that can coupled the transmit filter 132 to the loop circuit 133 .
- an attenuation element can include a resistor, an inductor, a capacitor, or any suitable combination thereof.
- Any suitable principles and advantages of the Lamb wave elements of a loop circuit discussed herein can be implemented in the loop circuit 133 .
- the loop circuit 133 can be implemented in accordance with any suitable principles and advantages described in U.S. Pat. Nos. 9,246,533 and/or 9,520,857, the disclosures of these patents are hereby incorporated by reference in their entireties herein.
- the receive filter 134 can filter a received RF signal received by the antenna 135 and provide a filtered RF signal to a receive port RX.
- the receive filter 134 is an acoustic wave filter that includes acoustic wave resonators arranged as a ladder filter.
- the receive filter 134 includes series resonators R 01 , R 03 , R 05 , R 07 , R 09 and shunt resonators R 02 , R 04 , R 06 , R 08 .
- the receive filter 134 can include any suitable number of series resonators and any suitable number of shunt resonators.
- the acoustic wave resonators of the receive filter 134 can include BAW resonators, such as FBARs and/or SMRs.
- the acoustic wave resonators of the receive filter 134 can include SAW resonators or Lamb wave resonators.
- the resonators of the receive filter 134 can include two or more types of resonators (e.g., one or more SAW resonators and one or more BAW resonators).
- a series inductor L 3 can be coupled between the acoustic wave resonators of the receive filter 134 and the receive port RX.
- FIG. 14 is a graph comparing isolation for the duplexer 130 of FIG. 13 to a corresponding duplexer without a loop circuit.
- the acoustic wave properties of the lowest-order symmetric (S 0 ) Lamb wave mode for a Lamb wave resonator with an aluminum nitride piezoelectric layer were used to study the loop circuits for BAW filters.
- the Lamb wave S 0 mode for such a resonator in the simulations was assumed to have a velocity of ⁇ 9000 m/s and a K 2 of ⁇ 2%.
- a Band 7 BAW duplexer was used in the simulations.
- the graph in FIG. 14 indicates that the loop circuit 133 improves receive isolation. The improvement can be about 5 decibels (dB) in certain instances as indicated by FIG. 14 .
- FIG. 15 is a schematic diagram of a duplexer 150 with a loop circuit for a receive filter 134 .
- the duplexer 150 is like the duplexer 130 of FIG. 13 , except that the duplexer 150 includes a loop circuit 153 for the receive filter 134 .
- a loop circuit 153 is coupled to the receive filter 134 .
- the loop circuit 153 can be coupled to an input resonator R 09 and an output resonator R 01 of the receive filter 134 . In some other instances, the loop circuit 153 can be coupled to a different node of the ladder circuit of the receive filter 134 than illustrated.
- the loop circuit 153 includes Lamb wave elements 156 and 157 coupled to the receive filter 134 by capacitors CAP 04 and CAP 03 , respectively. Any suitable principles and advantages of the Lamb wave elements of a loop circuit discussed herein can be implemented in the loop circuit 153 .
- the Lamb wave elements 156 and 157 can together correspond to the Lamb wave element 14 of FIG. 14A .
- FIG. 16A is a graph comparing isolation for the duplexer 150 of FIG. 15 to a corresponding duplexer without a loop circuit. The same simulation assumptions were used to generate the graphs of FIG. 16A and FIG. 16B as for generating the graph of FIG. 14 .
- the graph of FIG. 16A indicates that the loop circuit 153 improves transmit isolation.
- FIG. 16B is a graph comparing receive band rejection for the duplexer 150 of FIG. 15 to a corresponding duplexer without a loop circuit. This graph illustrates that the loop circuit 153 can suppress rejection at a lower frequency range for the receive band.
- FIG. 17 is a schematic diagram of a duplexer 170 with a first loop circuit 133 for a transmit filter 132 and a second loop circuit 153 for a receive filter 134 .
- FIG. 17 illustrates that separate loop circuits can be implemented for a transmit filter and a receive filter.
- a loop circuit can be implemented for an acoustic wave filter to bring the parameter of the acoustic wave filter within a specification.
- a loop circuit can be implemented to bring isolation of an acoustic wave filter to be less than ⁇ 60 dB to meet a specification for isolation if the acoustic wave filter would not otherwise meet the specification for isolation.
- FIG. 18 is a graph comparing isolation for the duplexer 170 of FIG. 17 to a corresponding duplexer without loop circuits. This graph indicates that the loop circuits 133 and 153 of the duplexer 170 improve both transmit and receive isolation.
- FIG. 19 is a schematic diagram of a duplexer 190 with a loop circuit 193 .
- the duplexer 190 is like the duplexer 130 of FIG. 13 , except that the duplexer 190 includes a loop circuit 193 that is coupled across the transmit filter 132 and the receive filter 134 .
- the loop circuit 193 is coupled to the receive port RX and the transmit port TX. In some other instances, the loop circuit 193 can be coupled to a different node of the ladder circuit of the receive filter 134 and/or a different node of the transmit filter 132 than illustrated.
- the loop circuit 193 includes Lamb wave elements 196 and 197 .
- the Lamb wave element 196 is coupled to the transmit filter by capacitor CAP 01 .
- the Lamb wave element 197 is coupled to the receive filter 134 by capacitor C 02 .
- Any other suitable attenuation element such as a resistor or an inductor, can be implemented in place of or in addition to the capacitor C 01 and/or the capacitor C 02 .
- Any suitable principles and advantages of the Lamb wave elements of a loop circuit discussed herein can be implemented in the loop circuit 193 .
- the Lamb wave elements 196 and 197 can together correspond to the Lamb wave element 14 of FIG. 14A .
- Acoustic wave devices disclosed herein can be implemented in acoustic wave filters.
- Such acoustic wave filters can be band pass filters arranged to filter radio frequency signals including radio frequency signals at up to and including millimeter wave frequencies.
- an acoustic wave filter assembly can include a first filter that includes a Lamb wave resonator and a second filter that includes a different type of resonator, such as an FBAR. The first filter and the second filter can be included on a single die.
- a schematic diagram of an example acoustic wave filter assembly will be discussed with reference to FIG. 20 . Although an acoustic wave filter assembly with two filters will be described for illustrative purposes, any suitable principles and advantages can be applied to acoustic wave filter assemblies with more than two filters.
- FIG. 20 is a schematic diagram of an acoustic wave filter assembly 200 that includes a first filter 202 with a Lamb wave resonator and a second filter 204 with a different type of acoustic wave resonator, in which the Lamb wave resonator and the different type of resonator are implemented on the same substrate according to an embodiment.
- the acoustic wave filter assembly 200 can include any of the acoustic wave devices of FIGS. 1A to 10 .
- the first filter 202 includes Lamb wave resonators L 01 , L 02 , L 03 , L 04 , L 05 , L 06 , L 07 , L 08 , and L 09 arranged as a ladder filter between an RF port RF 1 and an antenna port ANT.
- the RF port RF 1 can be a transmit port or a receive port.
- the first filter 202 is a band pass filter having a first pass band and arranged to filter a first RF signal.
- the second filter 204 includes acoustic wave resonators B 01 , B 02 , B 03 , B 04 , B 05 , B 06 , B 07 , B 08 , and B 09 arranged as a ladder filter between an RF port RF 2 and an antenna port ANT.
- the RF port RF 2 can be a transmit port or a receive port.
- the second filter 204 is a band pass filter having a second pass band and arranged to filter a second RF signal.
- the acoustic wave resonators B 01 to B 09 of the second filter 204 are a different type of acoustic wave resonators than the Lamb wave resonators L 01 to L 09 of the first filter 202 .
- the acoustic wave resonators B 01 to B 09 of the second filter 204 can be BAW resonators, such as FBARs.
- Lamb wave resonators L 01 to L 09 of the first filter 202 can be implemented on the same substrate of die as some or all of the acoustic wave resonators B 01 to B 09 of the second filter 204 .
- one or more resonators of the Lamb wave resonators L 01 to L 09 include a piezoelectric layer that includes the same material (e.g., aluminum nitride) as the piezoelectric layer of one or more of the acoustic wave resonators B 01 to B 09 .
- a multiplexer e.g., a duplexer
- Acoustic wave devices disclosed herein can be implemented in an acoustic wave filter that includes a Lamb wave resonator and a different type of acoustic wave resonator.
- Such an acoustic wave filter can include any suitable acoustic wave device disclosed herein.
- the acoustic wave filter can be band pass filters arranged to filter radio frequency signals.
- the Lamb wave resonator and the different type of acoustic wave resonator can be implemented on the same substrate of a die.
- the substrate can be a silicon substrate, for example.
- the different type of acoustic wave resonator can be an FBAR.
- the different type of acoustic wave resonator and the Lamb wave resonator can include respective piezoelectric layer of the same piezoelectric material (for example, aluminum nitride) in certain applications.
- Example acoustic wave filters with a Lamb wave resonator and another type of acoustic wave resonator will be discussed with reference to FIGS. 21A to 21F .
- These example acoustic wave filters can achieve desirable performance and/or loading characteristics for certain applications. Any suitable principles and advantages of these acoustic wave filters can be implemented together with each other.
- any of the example acoustic wave filters of FIGS. 21A to 21F can include an acoustic wave device in accordance with any suitable principles and advantages of FIGS. 1A to 10 .
- FIG. 21A is a schematic diagram of an acoustic wave filter 210 that includes series Lamb wave resonators and other shunt acoustic wave resonators according to an embodiment.
- the series Lamb wave resonators LS 01 , LS 02 , LS 03 , LS 04 , and LS 05 and other shunt acoustic wave resonators BP 01 , BP 02 , BP 03 , BP 04 , and BP 05 are arranged as a ladder filter coupled between an RF port RF and an antenna port ANT.
- the RF port RF can be a transmit port of a transmit filter.
- the RF port can be a receive port of a receive filter.
- any suitable number of series resonators and any suitable number of shunt resonators can be included in the acoustic wave filter 210 .
- the other shunt acoustic wave resonators BP 01 , BP 02 , BP 03 , BP 04 , and BP 05 can be FBARs.
- the other shunt acoustic wave BP 01 , BP 02 , BP 03 , BP 04 , and BP 05 can be SAW resonators or SMRs.
- FIG. 21B is a schematic diagram of an acoustic wave filter 212 that includes shunt Lamb wave resonators and other series acoustic wave resonators according to an embodiment.
- the shunt Lamb wave resonators LP 01 , LP 02 , LP 03 , LP 04 , and LP 05 and other series acoustic wave resonators BS 01 , BS 02 , BS 03 , BSO 4 , and BS 05 are arranged as a ladder filter coupled between an RF port RF and an antenna port ANT.
- the RF port RF can be a transmit port of a transmit filter.
- the RF port can be a receive port of a receive filter.
- any suitable number of series resonators and any suitable number of shunt resonators can be included in the acoustic wave filter 212 .
- the other series acoustic wave resonators BS 01 , BS 02 , BS 03 , BSO 4 , and BS 05 can be FBARs.
- the other shunt acoustic wave BS 01 , BS 02 , BS 03 , BSO 4 , and BS 05 can be SAW resonators or SMRs.
- FIG. 21C is a schematic diagram of an acoustic wave filter 214 that includes a series Lamb wave resonator LS and other acoustic wave resonators B 01 to B 08 coupled to an antenna port ANT via the series Lamb wave resonator LS according to an embodiment.
- the other acoustic wave resonators B 01 to B 08 can be SAW resonators or BAW resonators.
- FIG. 21D is a schematic diagram of an acoustic wave filter 216 that includes a series Lamb wave resonator LS and other acoustic wave resonators B 02 to B 09 coupled to a radio frequency port RF via the series Lamb wave resonator LS according to an embodiment.
- the other acoustic wave resonators B 02 to B 09 can be SAW resonators or BAW resonators.
- FIG. 21E is a schematic diagram of an acoustic wave filter 218 that includes a series Lamb wave resonator LS and other acoustic wave resonators B 01 to B 04 and B 06 to B 09 according to an embodiment.
- a first other series resonator B 01 is coupled between the series Lamb wave resonator LS and the RF port RF.
- a second other series resonator B 09 is coupled between the series Lamb wave resonator LS and the antenna port ANT in the acoustic wave filter 218 .
- the other acoustic wave resonators B 01 to B 04 and B 06 to B 09 can be SAW resonators or BAW resonators.
- FIG. 21F is a schematic diagram of an acoustic wave filter 219 that includes a shunt Lamb wave resonator LP and other acoustic wave resonators B 01 to B 05 and B 07 to B 09 according to an embodiment.
- a first other series resonator B 01 is coupled between the shunt Lamb wave resonator LP and the RF port RF.
- a second other series resonator B 09 is coupled between the shunt Lamb wave resonator LP and the antenna port ANT in the acoustic wave filter 219 .
- the other acoustic wave resonators B 01 to B 05 and B 07 to B 09 can be SAW resonators or BAW resonators.
- FIGS. 22A, 22B, 22C, and 22D are schematic block diagrams of illustrative packaged modules according to certain embodiments.
- FIG. 22A is a schematic block diagram of a module 220 that includes a duplexer 222 with a Lamb wave loop circuit and an antenna switch 223 .
- the module 220 can include a package that encloses the illustrated elements.
- the duplexer 222 with a Lamb wave loop circuit and the antenna switch 223 can be disposed on a common packaging substrate.
- the packaging substrate can be a laminate substrate, for example.
- the duplexer 222 can include a Lamb wave loop circuit in accordance with any suitable principles and advantages discussed herein.
- the antenna switch 223 can be a multi-throw radio frequency switch.
- the antenna switch 223 can selectively electrically couple a common node of the duplexer 222 to an antenna port of the module 220 .
- FIG. 22B is a schematic block diagram of a module 220 ′ that includes a first filter 222 A with a Lamb wave loop circuit, a second filter 222 B with a Lamb wave loop circuit, and an antenna switch 223 ′.
- the module 220 ′ illustrates that two different filters with Lamb wave loop circuits can be included in a module.
- the first filter 222 A with a Lamb wave loop circuit can be implemented on a different die than the second filter 222 B with a Lamb wave loop circuit.
- the antenna switch 223 ′ can selectively electrically couple a port of the first filter 222 A and/or the second filter 222 B to an antenna port of the module 220 ′.
- FIG. 22C is a schematic block diagram of a module 224 that includes a power amplifier 225 , a switch 226 , and a duplexer 222 with a Lamb wave loop circuit.
- the power amplifier 225 can amplify a radio frequency signal.
- the switch 226 can selectively electrically couple an output of the power amplifier 225 to a transmit port of the duplexer 222 .
- the duplexer 222 can include a Lamb wave loop circuit in accordance with any suitable principles and advantages discussed herein.
- FIG. 22D is a schematic block diagram of a module 227 that includes power amplifier 225 , a switch 226 , a duplexer 222 with a Lamb wave loop circuit, and an antenna switch 223 .
- the module 227 is similar to the module 224 of FIG. 22C , except the module 227 additionally includes the antenna switch 223 .
- FIGS. 23A, 23B, and 23C are schematic block diagrams of illustrative packaged modules according to certain embodiments.
- FIG. 23A is a schematic block diagram of a module 230 that includes one or more filters 232 with a Lamb wave resonator and another type of acoustic wave resonator.
- the one or more filters 232 can include any suitable combination of features disclosed in association with FIGS. 20 to 21F .
- the module 230 can include a package that encloses the illustrated elements.
- the one or more filters 232 with a Lamb wave resonator and another type of acoustic wave resonator and the antenna switch 233 can be disposed on a common packaging substrate.
- the packaging substrate can be a laminate substrate, for example.
- the antenna switch 233 can be a multi-throw radio frequency switch.
- the antenna switch 233 can selectively electrically couple any suitable number of the one or more of the filters 232 to an antenna port of the module 230 .
- FIG. 23B is a schematic block diagram of a module 234 that includes a power amplifier 235 , a switch 236 , and one or more filters 232 with a Lamb wave resonator and another type of acoustic wave resonator.
- the power amplifier 235 can amplify a radio frequency signal.
- the switch 236 can selectively electrically couple an output of the power amplifier 235 to a transmit port of the duplexer 232 .
- the one or more filters 232 with a Lamb wave resonator and another type of acoustic wave resonator can be implemented in accordance with any suitable principles and advantages discussed herein.
- FIG. 23C is a schematic block diagram of a module 237 that includes power amplifier 235 , a switch 236 , one or more filters 232 with a Lamb wave resonator and another type of acoustic wave resonator, and an antenna switch 233 .
- the module 237 is similar to the module 234 of FIG. 23B , except the module 237 additionally includes the antenna switch 233 .
- FIG. 24 is a schematic block diagram of a wireless communication device 240 that includes filters 243 with one or more Lamb wave elements in accordance with one or more embodiments.
- the filters 243 can include a duplexer with a Lamb wave loop circuit in accordance with any suitable principles and advantages disclosed herein.
- the filters 243 can include a first filter with a Lamb wave resonator and a second filter with a different type of acoustic wave resonator, in which the Lamb wave resonator and the different type of acoustic wave resonator are implemented on a common substrate of a die.
- the filters 243 can include a filter that includes a Lamb wave resonator and a different type of acoustic wave resonator.
- the wireless communication device 240 can be any suitable wireless communication device.
- a wireless communication device 240 can be a mobile phone, such as a smart phone.
- the wireless communication device 240 includes an antenna 241 , an RF front end 242 that includes the filters 243 , an RF transceiver 244 , a processor 245 , a memory 246 , and a user interface.
- the antenna 241 can transmit RF signals provided by the RF front end 242 .
- the antenna 241 can receive RF signals and provide the received RF signals to the RF front end 242 for processing.
- the RF front end 242 can include one or more power amplifiers, one or more low noise amplifiers, RF switches, receive filters, transmit filters, duplex filters, filters of a multiplexer, filters of a diplexers or other frequency multiplexing circuit, or any suitable combination thereof.
- the filters 243 of the RF front end 242 can be implemented in accordance with any suitable principles and advantages disclosed herein.
- the RF front end 242 can transmit and receive RF signals associated with any suitable communication standards. Any of the acoustic wave devices and/or Lamb wave loop circuits discussed herein can be implemented in the RF front end 242 .
- the RF transceiver 244 can provide RF signals to the RF front end 242 for amplification and/or other processing.
- the RF transceiver 244 can also process an RF signal provided by a low noise amplifier of the RF front end 242 .
- the RF transceiver 244 is in communication with the processor 245 .
- the processor 245 can be a baseband processor.
- the processor 245 can provide any suitable base band processing functions for the wireless communication device 240 .
- the memory 246 can be accessed by the processor 245 .
- the memory 246 can store any suitable data for the wireless communication device 240 .
- the user interface 247 can be any suitable user interface, such as a display with touch screen capabilities.
- any of the embodiments described above can be implemented in association with mobile devices such as cellular handsets.
- the principles and advantages of the embodiments can be used for any systems or apparatus, such as any uplink wireless communication device, that could benefit from any of the embodiments described herein.
- the teachings herein are applicable to a variety of systems. Although this disclosure includes some example embodiments, the teachings described herein can be applied to a variety of structures. Any of the principles and advantages discussed herein can be implemented in association with RF circuits configured to process signals in a range from about 30 kHz to 300 GHz, such as in a range from about 450 MHz to 8.5 GHz.
- Examples of the electronic devices can include, but are not limited to, consumer electronic products, parts of the consumer electronic products such as packaged radio frequency modules, uplink wireless communication devices, wireless communication infrastructure, electronic test equipment, etc.
- Examples of the electronic devices can include, but are not limited to, a mobile phone such as a smart phone, a wearable computing device such as a smart watch or an ear piece, a telephone, a television, a computer monitor, a computer, a modem, a hand-held computer, a laptop computer, a tablet computer, a microwave, a refrigerator, a vehicular electronics system such as an automotive electronics system, a stereo system, a digital music player, a radio, a camera such as a digital camera, a portable memory chip, a washer, a dryer, a washer/dryer, a copier, a facsimile machine, a scanner, a multi-functional peripheral device, a wrist watch, a clock, etc.
- the electronic devices can include unfinished
- the words “comprise,” “comprising,” “include,” “including” and the like are to be construed in an inclusive sense, as opposed to an exclusive or exhaustive sense; that is to say, in the sense of “including, but not limited to.”
- the word “coupled”, as generally used herein, refers to two or more elements that may be either directly connected, or connected by way of one or more intermediate elements.
- the word “connected”, as generally used herein, refers to two or more elements that may be either directly connected, or connected by way of one or more intermediate elements.
- conditional language used herein such as, among others, “can,” “could,” “might,” “may,” “e.g.,” “for example,” “such as” and the like, unless specifically stated otherwise, or otherwise understood within the context as used, is generally intended to convey that certain embodiments include, while other embodiments do not include, certain features, elements and/or states.
- conditional language is not generally intended to imply that features, elements and/or states are in any way required for one or more embodiments or that one or more embodiments necessarily include logic for deciding, with or without author input or prompting, whether these features, elements and/or states are included or are to be performed in any particular embodiment.
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Abstract
Aspects of this disclosure relate to acoustic wave filters that include a Lamb wave resonator and a second acoustic wave resonator that is a different type of acoustic wave resonator than the Lamb wave resonator. The different type of resonator can be a film bulk acoustic wave resonator for example. Some embodiments of this disclosure relate to an acoustic wave filter that includes the Lamb wave resonator and the second acoustic wave resonator. Some embodiments of this disclosure related to different respective acoustic wave filters including the Lamb wave resonator and the second acoustic wave resonator, in which the Lamb wave resonator and the second acoustic wave resonator are implemented on a common substrate.
Description
- This application is a continuation of U.S. patent application Ser. No. 16/287,909, filed Feb. 27, 2019 and titled “LAMB WAVE RESONATOR AND OTHER TYPE OF ACOUSTIC WAVE RESONATOR INCLUDED IN ONE OR MORE FILTERS,” which claims the benefit of priority under 35 U.S.C. § 119(e) of U.S. Provisional Patent Application No. 62/637,641, filed Mar. 2, 2018 and titled “LAMB WAVE LOOP CIRCUIT FOR ACOUSTIC WAVE FILTER,” the disclosures of each of which are hereby incorporated by reference in their entireties herein.
- Embodiments of this disclosure relate to acoustic wave filters.
- Acoustic wave filters can filter radio frequency signals. An acoustic wave filter can include a plurality of resonators arranged to filter a radio frequency signal. The resonators can be arranged as a ladder circuit. Example acoustic wave filters include surface acoustic wave (SAW) filters, bulk acoustic wave (BAW) filters, and Lamb wave resonator filters. A film bulk acoustic resonator (FBAR) filter is an example of a BAW filter. A solidly mounted resonator (SMR) filter is another example of a BAW filter.
- Acoustic wave filters can be implemented in radio frequency electronic systems. For instance, filters in a radio frequency front end of a mobile phone can include acoustic wave filters. Two acoustic wave filters can be arranged as a duplexer.
- The innovations described in the claims each have several aspects, no single one of which is solely responsible for its desirable attributes. Without limiting the scope of the claims, some prominent features of this disclosure will now be briefly described.
- One aspect of this disclosure is an acoustic wave device that includes an acoustic wave filter configured to filter a radio frequency signal and a loop circuit coupled to the acoustic wave filter. The loop circuit is configured to generate an anti-phase signal to a target signal at a particular frequency. The loop circuit including a Lamb wave element.
- The acoustic wave filter can include can include a bulk acoustic wave resonator. The bulk acoustic wave resonator and the Lamb wave element can each include the same piezoelectric material. The piezoelectric material can be aluminum nitride. The bulk acoustic wave resonator and the Lamb wave element can share a cavity. The bulk acoustic wave resonator and the Lamb wave element can have separate cavities. The bulk acoustic wave resonator can be a film bulk acoustic resonator.
- The acoustic wave filter can include can include a surface acoustic wave resonator. The acoustic wave filter can include a Lamb wave resonator. The acoustic wave filter can be a receive filter. The acoustic wave filter can be a transmit filter.
- The Lamb wave element can include an aluminum nitride layer. The Lamb wave element can include a lithium niobate layer. The Lamb wave element can include a lithium tantalate layer. The Lamb wave element can include an interdigital transducer electrode on a piezoelectric layer and gratings disposed on the piezoelectric layer on opposing sides of the interdigital transducer electrode. The Lamb wave element can include an interdigital transducer electrode on a piezoelectric layer, in which the interdigital transducer electrode has free edges. The Lamb wave element can operate in one or more of a lowest-order asymmetric mode, a lowest-order symmetric mode, a lowest-order shear horizontal mode, a first-order asymmetric mode, a first-order symmetric mode, or a first-order shear horizontal mode.
- The Lamb wave element and at least one resonator of the acoustic wave filter can be on a common semiconductor substrate. The semiconductor substrate can be a silicon substrate.
- The acoustic wave device can further include a second acoustic wave filter, in which the acoustic wave filter and the second acoustic wave filter are included in a duplexer.
- Another aspect of this disclosure is a radio frequency module that includes a duplexer and a radio frequency switch. The duplexer includes an acoustic wave device. The acoustic wave device includes an acoustic wave filter and a loop circuit coupled to the acoustic wave filter. The loop circuit is configured to generate an anti-phase signal to a target signal at a particular frequency. The loop circuit includes a Lamb wave element. The radio frequency switch is arranged to pass a radio frequency signal associated with a port of the duplexer.
- The acoustic wave filter can include a film bulk acoustic wave resonator. The film bulk acoustic wave resonator and the Lamb wave element can be on a common substrate. The common substrate can be a silicon substrate. The Lamb wave element can include an aluminum nitride layer.
- The radio frequency module can further include a power amplifier, in which the radio frequency switch coupled in a signal path between the power amplifier and the duplexer.
- The radio frequency switch can be an antenna switch, and the port of the duplexer can be an antenna port coupled to the radio frequency switch.
- Another aspect of this disclosure is a wireless communication device that includes a radio frequency front end and an antenna in communication with the radio frequency front end. The radio frequency front end includes an acoustic wave device. The acoustic wave device includes an acoustic wave filter configured to filter a radio frequency signal and a loop circuit coupled to the acoustic wave filter. The loop circuit configured to generate an anti-phase signal to a target signal at a particular frequency. The loop circuit includes a Lamb wave element.
- The acoustic wave filter can includes a film bulk acoustic wave resonator. The film bulk acoustic wave resonator and the Lamb wave element can be on a common silicon substrate.
- Another aspect of this disclosure is an acoustic wave device that includes a bulk acoustic wave resonator and a Lamb wave element. The bulk acoustic wave resonator includes a piezoelectric layer positioned between a first electrode and a second electrode. The bulk acoustic wave resonator and the Lamb wave element are implemented on a common substrate of a die.
- The acoustic wave device can further include additional bulk acoustic wave resonators on the common substrate. The bulk acoustic wave resonator and the additional bulk acoustic wave resonators can be included in a band pass filter. The band pass filter can be arranged to filter a radio frequency signal. The Lamb wave element can be included in a loop circuit that is coupled to the band pass filter. The loop circuit can be configured generate an anti-phase signal to a target signal at a particular frequency.
- The bulk acoustic wave resonator can be a film bulk acoustic resonator. The common substrate can include silicon. The Lamb wave element can include a piezoelectric layer that includes the same material as a piezoelectric layer of the bulk acoustic wave resonator. The material can include aluminum nitride. The bulk acoustic wave resonator and the Lamb wave element can share a cavity. The bulk acoustic wave resonator and the Lamb wave element can have separate cavities.
- The bulk acoustic wave resonator can be a solidly mounted resonator. The Lamb wave element can include a Bragg reflector.
- The Lamb wave element can include an interdigital transducer electrode on a piezoelectric layer and gratings disposed on the piezoelectric layer on opposing sides of the interdigital transducer electrode. The Lamb wave element can include an interdigital transducer electrode on a piezoelectric layer, in which the interdigital transducer electrode has free edges.
- Another aspect of this disclosure is a radio frequency module that includes an acoustic wave device and a radio frequency switch. The acoustic wave device includes a Lamb wave element and a bulk acoustic wave resonator. The bulk acoustic wave resonator and the Lamb wave element are implemented on a common substrate of a die. The bulk acoustic wave resonator is included in a band pass filter arranged to filter a radio frequency signal. The radio frequency switch is coupled to the band pass filter. The radio frequency switch is arranged to pass the radio frequency signal.
- The bulk acoustic wave resonator can be a film bulk acoustic wave resonator. The common substrate can be a silicon substrate. The Lamb wave element can include an aluminum nitride layer.
- Another aspect of this disclosure is a wireless communication device that includes a radio frequency front end and an antenna. The radio frequency front end includes an acoustic wave device. The acoustic wave device includes a Lamb wave element and a bulk acoustic wave resonator. The Lamb wave element and the bulk acoustic wave element are implemented on a common substrate of a die. The bulk acoustic wave resonator is included in a band pass filter arranged to filter a radio frequency signal. The antenna in communication with the band pass filter.
- The bulk acoustic wave resonator can be a film bulk acoustic wave resonator. The common substrate can be a silicon substrate. The Lamb wave element can include an aluminum nitride layer.
- Another aspect of this disclosure is an acoustic wave filter that includes a Lamb wave resonator and a second acoustic wave resonator electrically coupled to the Lamb wave resonator. The second acoustic wave resonator is a different type of acoustic wave resonator than the Lamb wave resonator. The acoustic wave filter configured to filter a radio frequency signal.
- The Lamb wave resonator and the second acoustic wave resonator can be implemented on a common substrate of a die. The common substrate can be a silicon substrate. The Lamb wave resonator can include a piezoelectric layer that includes the same material as a piezoelectric layer of the second acoustic wave resonator. The piezoelectric layer of the Lamb wave resonator can be an aluminum nitride layer.
- The second acoustic wave resonator can be a film bulk acoustic wave resonator. The Lamb wave resonator and the film bulk acoustic wave resonator can share a cavity. The Lamb wave resonator and the film bulk acoustic wave resonator can include separate cavities.
- The second acoustic wave resonator can be a surface acoustic wave resonator.
- The Lamb wave resonator can be a series resonator and the second acoustic wave resonator can be a shunt resonator. The Lamb wave resonator can be a shunt resonator and the second acoustic wave resonator can be a series resonator.
- The acoustic wave filter can further include a plurality of additional acoustic wave resonators. The additional acoustic wave resonators can be the same type of acoustic wave resonator as the second acoustic wave resonator.
- The acoustic wave filter can include a first number of acoustic wave resonators that are the same type of acoustic wave resonator as the second acoustic wave resonator, in which the first number being at least twice as many as a second number of one or more Lamb wave resonators of the acoustic wave filter.
- Another aspect of this disclosure is a wireless communication device that includes an acoustic wave filter and an antenna in communication with the acoustic wave filter. The acoustic wave filter is configured to filter a radio frequency signal. The acoustic wave filter includes a Lamb wave resonator and a second of acoustic wave resonator. The Lamb wave resonator and the second acoustic wave resonator are implemented on a common substrate. The second acoustic wave resonator is a different type of acoustic wave resonator than the Lamb wave resonator;
- The second type of acoustic wave resonator can be a film bulk acoustic wave resonator, and the Lamb wave resonator can include a piezoelectric layer that includes the same material as a piezoelectric layer of the film bulk wave resonator.
- Another aspect of this disclosure is an acoustic wave filter assembly that includes a first acoustic wave filter and a second acoustic wave filter. The first acoustic wave filter is configured to filter a first radio frequency signal. The first acoustic wave filter includes a Lamb wave resonator implemented on a substrate of a die. The second acoustic wave filter is configured to filter a second radio frequency signal. The second acoustic wave filter including an acoustic wave resonator implemented on the same substrate of the die as the Lamb wave resonator. The acoustic wave resonator is a different type of acoustic wave resonator than the Lamb wave resonator.
- The acoustic wave resonator can be a film bulk acoustic wave resonator. The Lamb wave resonator can include a piezoelectric layer that includes the same material as a piezoelectric layer of the acoustic wave resonator.
- The first acoustic wave filter and the second acoustic wave filter can be e coupled together at a common node of a multiplexer. The multiplexer can be a duplexer.
- For purposes of summarizing the disclosure, certain aspects, advantages and novel features of the innovations have been described herein. It is to be understood that not necessarily all such advantages may be achieved in accordance with any particular embodiment. Thus, the innovations may be embodied or carried out in a manner that achieves or optimizes one advantage or group of advantages as taught herein without necessarily achieving other advantages as may be taught or suggested herein.
- The present disclosure relates to U.S. patent application Ser. No. 16/287,802, titled “LAMB WAVE LOOP CIRCUIT FOR ACOUSTIC WAVE FILTER,” filed on Feb. 27, 2019, the entire disclosure of which is hereby incorporated by reference herein. The present disclosure relates to U.S. patent application Ser. No. 16/287,891, titled “LAMB WAVE ELEMENT AND BULK ACOUSTIC WAVE RESONATOR ON COMMON SUBSTRATE,” filed on Feb. 27, 2019, the entire disclosure of which is hereby incorporated by reference herein.
- Embodiments of this disclosure will now be described, by way of non-limiting example, with reference to the accompanying drawings.
-
FIG. 1A is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and a film bulk acoustic resonator (FBAR) on a common substrate according to an embodiment. -
FIG. 1B is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and an FBAR on a common substrate according to another embodiment. -
FIG. 1C is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and an FBAR on a common substrate according to another embodiment. -
FIG. 1D is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and an FBAR on a common substrate according to another embodiment. -
FIG. 2 is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and a solidly mounted resonator (SMR) on a substrate according to an embodiment. -
FIG. 3A is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and a surface acoustic wave (SAW) resonator of an acoustic on a common substrate according to an embodiment. -
FIG. 3B is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and a SAW resonator of an acoustic on a common substrate according to another embodiment. -
FIG. 4A is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and a Lamb wave resonator on a common substrate according to an embodiment. -
FIG. 4B is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and a Lamb wave resonator on a common substrate according to another embodiment. -
FIG. 5A is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and a solidly mounted Lamb wave resonator on a common substrate according to an embodiment. -
FIG. 5B is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and a solidly mounted Lamb wave resonator on a common substrate according to another embodiment. -
FIG. 5C is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and a solidly mounted Lamb wave resonator on a common substrate according to another embodiment. -
FIG. 5D is a diagram of cross section of an acoustic wave device that includes a Lamb wave element and a solidly mounted Lamb wave resonator on a common substrate according to another embodiment. -
FIG. 6 is a diagram of cross section of an acoustic wave device that includes a solidly mounted Lamb wave element and an FBAR on a common substrate according to an embodiment. -
FIG. 7 is a diagram of cross section of an acoustic wave device that includes a solidly mounted Lamb wave element and an SMR on a common substrate according to an embodiment. -
FIG. 8 is a diagram of cross section of an acoustic wave device that includes a solidly mounted Lamb wave element and a SAW resonator on a common substrate according to an embodiment. -
FIG. 9 is a diagram of cross section of an acoustic wave device that includes a solidly mounted Lamb wave element and a Lamb wave resonator on a common substrate according to an embodiment. -
FIG. 10 is a diagram of cross section of an acoustic wave device that includes a solidly mounted Lamb wave element and a solidly mounted Lamb wave resonator on a common substrate according to an embodiment. -
FIGS. 11A to 11F are diagrams of cross sections of Lamb wave elements with gratings.FIG. 11A illustrates a Lamb wave element with a grounded electrode. -
FIG. 11B illustrates a Lamb wave element with a floating electrode.FIG. 11C illustrates a Lamb wave element without an electrode on a side of a piezoelectric layer that opposes an interdigital transducer (IDT) electrode.FIG. 11D illustrates another Lamb wave element. -
FIG. 11E illustrates another Lamb wave element.FIG. 11F illustrates another Lamb wave element. -
FIGS. 12A to 12F are diagrams of cross sections of Lamb wave elements with free edges.FIG. 12A illustrates a Lamb wave element with a grounded electrode. -
FIG. 12B illustrates a Lamb wave element with a floating electrode.FIG. 12C illustrates a Lamb wave element without an electrode on a side of a piezoelectric layer that opposes an IDT electrode.FIG. 12D illustrates another Lamb wave element.FIG. 12E illustrates another Lamb wave element.FIG. 12F illustrates another Lamb wave element. -
FIG. 13 is a schematic diagram of a duplexer with a loop circuit for a transmit filter according to an embodiment. -
FIG. 14 is a graph comparing isolation for the duplexer ofFIG. 13 to a corresponding duplexer without a loop circuit. -
FIG. 15 is a schematic diagram of a duplexer with a loop circuit for a receive filter according to an embodiment. -
FIG. 16A is a graph comparing isolation for the duplexer ofFIG. 15 to a corresponding duplexer without a loop circuit. -
FIG. 16B is a graph comparing receive band rejection for the duplexer ofFIG. 15 to a corresponding duplexer without a loop circuit. -
FIG. 17 is a schematic diagram of a duplexer with a first loop circuit for a transmit filter and a second loop circuit for a receive filter according to an embodiment. -
FIG. 18 is a graph comparing isolation for the duplexer ofFIG. 17 to a corresponding duplexer without loop circuits. -
FIG. 19 is a schematic diagram of a duplexer with a loop circuit coupled between a transmit port of a transmit filter and a receive port of a receive filter according to an embodiment. -
FIG. 20 is a schematic diagram of an acoustic wave filter assembly that includes a first filter with a Lamb wave resonator and a second filter with a different type of acoustic wave resonator, in which the Lamb wave resonator and the different type of resonator are implemented on the same substrate according to an embodiment. -
FIG. 21A is a schematic diagram of an acoustic wave filter that includes series Lamb wave resonators and other shunt acoustic wave resonators according to an embodiment. -
FIG. 21B is a schematic diagram of an acoustic wave filter that includes shunt Lamb wave resonators and other series acoustic wave resonators according to an embodiment. -
FIG. 21C is a schematic diagram of an acoustic wave filter that includes a series Lamb wave resonator and other acoustic wave resonators coupled to an antenna port via the series Lamb wave resonator according to an embodiment. -
FIG. 21D is a schematic diagram of an acoustic wave filter that includes a series Lamb wave resonator and other acoustic wave resonators coupled to a radio frequency port via the series Lamb wave resonator according to an embodiment. -
FIG. 21E is a schematic diagram of an acoustic wave filter that includes a series Lamb wave resonator and other acoustic wave resonators according to an embodiment. -
FIG. 21F is a schematic diagram of an acoustic wave filter that includes a shunt Lamb wave resonator and other acoustic wave resonators according to an embodiment. -
FIG. 22A is a schematic block diagram of a module that includes an antenna switch and a duplexer with a Lamb wave loop circuit according to an embodiment. -
FIG. 22B is a schematic block diagram of a module that includes an antenna switch and a plurality of filters with a Lamb wave loop circuit according to an embodiment. -
FIG. 22C is a schematic block diagram of a module that includes a power amplifier, a switch, and a duplexer with a Lamb wave loop circuit according to an embodiment. -
FIG. 22D is a schematic block diagram of a module that includes power amplifier, a switch, a duplexer with a Lamb wave loop circuit, and an antenna switch according to an embodiment. -
FIG. 23A is a schematic block diagram of a module that includes an antenna switch and one or more filters that include a Lamb wave resonator and another type of acoustic wave resonator according to an embodiment. -
FIG. 23B is a schematic block diagram of a module that includes a power amplifier, a switch, and one or more filters that include a Lamb wave resonator and another type of acoustic wave resonator according to an embodiment. -
FIG. 23C is a schematic block diagram of a module that includes power amplifier, a switch, one or more filters that include a Lamb wave resonator and another type of acoustic wave resonator, and an antenna switch according to an embodiment. -
FIG. 24 is a schematic block diagram of a wireless communication device that includes a filter with a lamb wave element according to an embodiment. - The following description of certain embodiments presents various descriptions of specific embodiments. However, the innovations described herein can be embodied in a multitude of different ways, for example, as defined and covered by the claims. In this description, reference is made to the drawings where like reference numerals can indicate identical or functionally similar elements. It will be understood that elements illustrated in the figures are not necessarily drawn to scale. Moreover, it will be understood that certain embodiments can include more elements than illustrated in a drawing and/or a subset of the elements illustrated in a drawing. Further, some embodiments can incorporate any suitable combination of features from two or more drawings.
- An acoustic wave filter can include a loop circuit to cancel an unwanted frequency component. The loop circuit can enhance transmit/receive isolation and attenuation for a particular frequency range. The loop circuit can apply a signal having approximately the same amplitude and an opposite phase to a signal component to be canceled. Surface acoustic wave (SAW) loops circuits have been used to suppress isolation and attenuation in SAW filters. Some loop circuits for film bulk acoustic resonator (FBAR) filters and other bulk acoustic wave (BAW) filters have included LC circuits. Such LC circuits can include capacitor(s) and/or inductor(s) having a relatively large physical footprint and/or can be implemented external to a chip that includes the BAW filter coupled to the loop circuit.
- Lamb wave loop circuits are disclosed. Lamb wave loop circuits can be integrated with BAW filters and/or duplexers. For instance, aluminum nitride (AlN) Lamb wave loop circuits can be integrated with aluminum nitride FBAR filters. Such Lamb wave loop circuits can suppress transmit/receive (Tx/Rx) isolation and attenuation at any desired frequency range. A Lamb wave loop circuit can generate an anti-phase radio frequency (RF) signal to cancel a target signal at a desired frequency. The Lamb wave loop circuits discussed herein can improve the isolation and attenuation of RF acoustic wave filters, such as BAW filters (e.g., FBAR filters or SMR filters), SAW filters, and Lamb wave filters.
- A Lamb wave element can be a Lamb wave resonator or a Lamb wave delay line. A Lamb wave element can combine features of a SAW element and a BAW element. A Lamb wave resonator typically includes an interdigital transducer (IDT) electrode similar to a SAW resonator. Accordingly, the frequency of the Lamb wave resonator can be lithographically defined. A Lamb wave element can achieve a relatively high quality factor (Q) and a relatively high phase velocity like a BAW filter. The relatively high Q of a Lamb wave resonators can be due to, for example, a suspended structure. A Lamb wave element that includes an aluminum nitride piezoelectric layer can be relatively easy to integrate with other circuits, for example, because aluminum nitride process technology can be compatible with complementary metal oxide semiconductor (CMOS) process technology. Aluminum nitride Lamb wave resonators can overcome a relatively low resonance frequency limitation and integration challenge associated with SAW resonators and also overcome multiple frequency capability challenges associated with BAW resonators. Some Lamb wave resonator topologies are based on acoustic reflection from periodic reflective gratings. Some other Lamb wave resonator topologies are based on acoustic reflection from suspended free edges of a piezoelectric layer.
- A Lamb wave loop circuit and a BAW resonator of an acoustic wave filter can be implemented on a common substrate. An aluminum nitride Lamb wave loop circuit can be directly integrated with aluminum nitride FBAR filter and/or other BAW filters during processing to form such filters. Such integration can also be achieved for other suitable piezoelectric films. Accordingly, a Lamb wave loop circuit can have offer a cost effective and efficient way to include a loop circuit for a BAW filter. A Lamb wave loop circuit integrated with a BAW filter can be manufactured with characteristics sufficient for a loop circuit in a cost effective manner. A Lamb wave loop circuit for a BAW filter can be implemented in a relatively small physical footprint. For example, a Lamb wave loop circuit can have a smaller physical footprint than an LC circuit based loop circuit. A smaller physical footprint can reduce power consumption and/or reduce manufacturing costs.
- Lamb wave elements in a loop circuit discussed herein can operate in any suitable acoustic wave mode. Example acoustic wave modes that can be utilized in Lamb wave elements discussed herein include the lowest-order asymmetric (Aa) mode, the lowest-order symmetric (S0) mode, the lowest-order shear horizontal (SH0) mode, the first-order asymmetric (A1) mode, the first-order symmetric (S1) mode, the first-order shear horizontal (SH1) mode, the second-order asymmetric (A2) mode, the second-order symmetric (S2) mode, the second-order shear horizontal (SH2) mode, and the like.
- A Lamb wave element and a different type of acoustic wave resonator can be implemented on the same substrate of a die. The Lamb wave element can be included in a loop circuit and the different element can be in an acoustic wave filter coupled to the loop circuit. A Lamb wave element and a different type of acoustic wave element on a common substrate can be implemented in a variety of other applications. In certain instances, an acoustic wave filter can include a Lamb wave resonator and a different type of acoustic wave resonator implemented on the same die. For example, an acoustic wave filter can include a Lamb wave resonator and an FBAR implemented on a common substrate. According to certain applications, a first acoustic wave filter can include a Lamb wave resonator and a second acoustic wave filter can include a different type of acoustic wave resonator, in which the Lamb wave resonator and the different type of acoustic wave resonator are implemented on a common substrate.
- A loop circuit can include a free-standing Lamb wave element. For example, such a Lamb wave element and a resonator of an acoustic wave filter coupled to the loop circuit can be implemented in accordance with any suitable principles and advantages of the acoustic wave devices of
FIGS. 1A to 5D . The acoustic wave devices ofFIGS. 1A to 5D can also be implemented in other applications. Any suitable combination of features of the acoustic wave devices ofFIGS. 1A to 5D can be implemented together with each other. -
FIG. 1A is a diagram of cross section of anacoustic wave device 10 that includes a film bulk acoustic resonator (FBAR) 12 and aLamb wave element 14 according to an embodiment. TheFBAR 12 and theLamb wave element 14 are implemented on acommon substrate 19. TheFBAR 12 can be included in an acoustic wave filter and theLamb wave element 14 can be included in a loop circuit. TheFBAR 12 includeselectrodes piezoelectric substrate 15. TheLamb wave element 14 can be a Lamb wave resonator in certain instances. A Lamb wave resonator is a type of acoustic wave resonator. TheLamb wave element 14 can be a delay line in some instances. A Lamb wave delay line can include two sets of interdigital transducers. - The
Lamb wave element 14 includes feature of a SAW resonator and an FBAR. As illustrated, theLamb wave element 14 includes apiezoelectric layer 15, an interdigital transducer electrode (IDT)electrode 16 on thepiezoelectric layer 15, and anelectrode 17. Thepiezoelectric layer 15 can be a thin film. Thepiezoelectric layer 15 can be an aluminum nitride layer. In other instances, thepiezoelectric layer 15 can be any suitable piezoelectric layer. For example, thepiezoelectric layer 15 can be a lithium niobate layer or a lithium tantalate layer. The frequency of the Lamb wave resonator can be based on the geometry of theIDT electrode 16. In some instances, the illustrated IDTs of theLamb wave element 14 represent two sets of IDTs. Theelectrode 17 can be grounded in certain instances. In some other instances, theelectrode 17 can be floating. Anair cavity 18 is disposed between theelectrode 17 and asubstrate 19. Any suitable cavity can be implemented in place of theair cavity 18. Thesubstrate 19 can be a semiconductor substrate. For example, thesubstrate 19 can be a silicon substrate. Thesubstrate 19 can be any other suitable substrate, such as a quartz substrate, a sapphire substrate, or a spinel substrate. - In the
acoustic wave device 10, theLamb wave resonator 14 and theFBAR 12 share apiezoelectric layer 15. A first portion of thepiezoelectric layer 15 can be considered the piezoelectric layer of theFBAR 12 and a second portion of thepiezoelectric layer 15 can be considered the piezoelectric layer of theLamb wave element 14. As also illustrated inFIG. 1A , theLamb wave resonator 14 and the FBAR share anair cavity 18. In certain applications, sharing anair cavity 18 can reduce the size of an acoustic wave device relative to implementing separate air cavities. TheLamb wave resonator 14 and theFBAR 12 can be disposed on acommon semiconductor substrate 19. Thesemiconductor substrate 19 can be a silicon substrate. -
FIG. 1B is a diagram of cross section of anacoustic wave device 10′ that includes anFBAR 12′ and aLamb wave element 14′ according to an embodiment. Theacoustic wave device 10′ is like theacoustic wave device 10 ofFIG. 1A except thatseparate air cavities acoustic wave device 10′ for theFBAR 12′ and theLamb wave element 14′, respectively. In theacoustic wave device 10′, afirst air cavity 18A is provided for theFBAR 12′ and asecond air cavity 18B is provided for theLamb wave element 14′. In certain instances, having separate air cavities can be beneficial for maintaining the mechanical integrity of theacoustic wave device 10′ and/or reducing cross talk between theFBAR 12 and theLamb wave element 14. -
FIG. 1C is a diagram of cross section of anacoustic wave device 10″ that includes anFBAR 12″ and aLamb wave element 14″ according to an embodiment. Theacoustic wave device 10″ is like theacoustic wave device 10 ofFIG. 1A except that an air cavity is implemented in thesubstrate 19′ instead of over thesubstrate 19 ofFIG. 1A . Anair cavity 18′ can be implemented for theacoustic wave device 10″ by etching a portion of thesubstrate 19′. -
FIG. 1D is a diagram of cross section of anacoustic wave device 10′″ that includes anFBAR 12′″ and aLamb wave element 14′″ according to an embodiment. Theacoustic wave device 10′″ is like theacoustic wave device 10′ ofFIG. 1B except that air cavities are implemented in thesubstrate 19″ instead of over thesubstrate 19 ofFIG. 1B . Theair cavities 18A′ and 18B′ can be implemented for theacoustic wave device 10′″ by etching portions of thesubstrate 19″. -
FIG. 2 is a diagram of cross section of anacoustic wave device 20 that includes aLamb wave element 14 and a solidly mounted resonator (SMR) 22 according to an embodiment. In theacoustic wave device 20, theSMR 22 and theLamb wave element 14 are implemented on acommon substrate 19. TheSMR 22 can be included in an acoustic wave filter and theLamb wave element 14 can be included in a loop circuit. TheSMR 22 and theLamb wave element 14 can include the same piezoelectric material, such as aluminum nitride (AlN). Apiezoelectric layer 15′ of theacoustic wave device 20 can include a first portion that serves as a piezoelectric layer for theLamb wave element 14 and a second portion that serves as a piezoelectric layer for theSMR 22. Thepiezoelectric layer 15′ can have a different shape than thepiezoelectric layer 15 in theacoustic wave device 10 ofFIG. 1A . - The
SMR 22 includes an acoustic mirror located between thesubstrate 19 and theelectrode 13B. The illustrated acoustic mirror includesBragg reflectors 24. As illustrated, theBragg reflectors 24 include alternating low impedance andhigh impedance layers Bragg reflectors 24 can include silicon dioxide (SiO2) layers and tungsten (W) layers. As another example, theBragg reflectors 24 can include silicon dioxide layers and molybdenum (Mo) layers. Any other suitable Bragg reflectors can alternatively or additionally be included in theSMR 22. TheLamb wave element 14 ofFIG. 2 includes its own anair cavity 18B. TheLamb wave element 14 and theSMR 22 can be disposed on acommon substrate 19. Thesubstrate 19 can be a semiconductor substrate. For example, thesubstrate 19 can be a silicon substrate. Thesubstrate 19 can be any other suitable substrate disclosed herein. -
FIG. 3A is a diagram of cross section of anacoustic wave device 30 that includes aLamb wave element 14 and a surface acoustic wave (SAW)resonator 32 according to an embodiment. In theacoustic wave device 30, theSAW resonator 32 and theLamb wave element 14 are implemented on acommon substrate 19. TheSAW resonator 32 can be included an acoustic wave filter and the Lamb wave element can be included in a loop circuit. TheSAW resonator 32 can include any suitable piezoelectric layer, such as an aluminum nitride layer, a lithium niobate layer, a lithium tantalate layer, or any suitable combination thereof. TheSAW resonator 32 and theLamb wave element 14 can include the same piezoelectric material, such as aluminum nitride, lithium niobate or lithium tantalate. Apiezoelectric layer 15″ of theacoustic wave device 30 can include a first portion that serves as a piezoelectric layer for theLamb wave element 14 and a second portion that serves as a piezoelectric layer for theSAW resonator 32. TheSAW resonator 32 includes anIDT electrode 34 on thepiezoelectric layer 15′. Thepiezoelectric layer 15″ can have a different shape than thepiezoelectric layer 15 in theacoustic wave device 10 ofFIG. 1A . TheLamb wave element 14 and theSAW 32 can be disposed on acommon substrate 19. Thesubstrate 19 can be a semiconductor substrate, such as a silicon substrate. -
FIG. 3B is a diagram of cross section of anacoustic wave device 30′ that includes aLamb wave element 14 and anSAW resonator 32′ according to an embodiment. Theacoustic wave device 30′ is like theacoustic wave device 30 ofFIG. 3A except that the respectivepiezoelectric layers 15″ and 35 of theLamb wave element 14 and theSAW resonator 32′ include different piezoelectric material. For example, theSAW resonator 32′ can include a lithiumniobate piezoelectric layer 35 and theLamb wave element 14 can include a lithiumniobate piezoelectric layer 15″. As another example, theSAW resonator 32′ can include a lithiumtantalate piezoelectric layer 35 and theLamb wave element 14 can include a lithiumtantalate piezoelectric layer 15″. - Although the
acoustic wave devices cavity 18B over thesubstrate 19, similar acoustic wave devices can be implemented with a cavity in the substrate (e.g., like thecavity 18B′ ofFIG. 1B ). -
FIG. 4A is a diagram of cross section of anacoustic wave device 40 that includes aLamb wave element 14 and aLamb wave resonator 42 according to an embodiment. In theacoustic wave device 40, theLamb wave resonator 42 and theLamb wave element 14 are implemented on acommon substrate 19. TheLamb wave resonator 42 can be included in an acoustic wave filter and theLamb wave element 14 can be included in a loop circuit. TheLamb wave resonator 42 can have the same or similar structure as theLamb wave element 14. In some instances, theLamb wave element 14 can include two sets of IDTs and theLamb wave resonator 42 can include a single set of IDTs. TheLamb wave element 14 and TheLamb wave resonator 42 can share apiezoelectric layer 15. As shown inFIG. 4A , theLamb wave element 14 and TheLamb wave resonator 42 can share anair cavity 18. In certain applications, sharing anair cavity 18 can reduce the size of an acoustic wave device relative to implementing separate air cavities. -
FIG. 4B is a diagram of cross section of anacoustic wave device 40′ that includes aLamb wave element 14 and aLamb wave resonator 42 according to an embodiment. Theacoustic wave device 40′ is like theacoustic wave device 40 ofFIG. 4A except thatseparate air cavities acoustic wave device 40′ for theLamb wave resonator 42 and theLamb wave element 14, respectively. In theacoustic wave device 40′, afirst air cavity 18A is provided for theLamb wave resonator 42 and asecond air cavity 18B is provided for theLamb wave element 14. In certain instances, having separate air cavities can be beneficial for maintaining the mechanical integrity of theacoustic wave device 40′ and/or reducing cross talk between theLamb wave resonator 42 and theLamb wave element 14. -
FIG. 5A is a diagram of cross section of anacoustic wave device 50 that includes aLamb wave element 14 and a solidly mountedLamb wave resonator 52 according to an embodiment. In theacoustic wave device 50, the solidly mountedLamb wave resonator 52 and theLamb wave element 14 are implemented on acommon substrate 19. The solidly mountedLamb wave resonator 52 can be included in an acoustic wave filter and theLamb wave element 14 can be included in a loop circuit. The solidly mountedLamb wave resonator 52 and theLamb wave element 14 can include the same piezoelectric material, such as aluminum nitride. Apiezoelectric layer 15′ of theacoustic wave device 50 can include a first portion that serves as a piezoelectric layer for theLamb wave element 14 and a second portion that serves as a piezoelectric layer for the solidly mountedLamb wave resonator 52. - The solidly mounted
Lamb wave resonator 52 includes features of a SAW resonator and an SMR. The solidly mountedLamb wave resonator 52 includes alower electrode 53, a piezoelectric layer, anIDT electrode 54 on the piezoelectric layer, and an acoustic mirror located between thesubstrate 19 and theelectrode 53. The illustrated acoustic mirror includesBragg reflectors 56. As illustrated, theBragg reflectors 56 include alternating low impedance andhigh impedance layers Bragg reflectors 56 can include silicon dioxide layers and tungsten layers. Any other suitable Bragg reflectors can alternatively or additionally be included in the solidly mountedLamb wave resonator 52. The solidly mountedLamb wave resonator 52 can include an aluminum nitride piezoelectric layer, for example. -
FIG. 5B is a diagram of cross section of anacoustic wave device 50′ that includes aLamb wave element 14 and solidly mountedLamb wave resonator 52 according to an embodiment. Theacoustic wave device 50′ is like theacoustic wave device 50 ofFIG. 5A except that the respectivepiezoelectric layers 15′ and 59 of theLamb wave element 14 and the solidly mountedLamb wave resonator 52 include different piezoelectric material. -
FIG. 5C is a diagram of cross section of anacoustic wave device 50″ that includes aLamb wave element 14 and solidly mountedLamb wave resonator 52 according to an embodiment. Theacoustic wave device 50″ is like theacoustic wave device 50 ofFIG. 5A except that anair cavity 18B′ is implemented in thesubstrate 19 instead of over thesubstrate 19 ofFIG. 5A . Theair cavity 18B′ can be implemented for theacoustic wave device 50″ by etching a portion of thesubstrate 19′. -
FIG. 5D is a diagram of cross section of anacoustic wave device 50′ that includes aLamb wave element 14 and solidly mountedLamb wave resonator 52 according to an embodiment. Theacoustic wave device 50′ is like theacoustic wave device 50″ ofFIG. 5C except that the respectivepiezoelectric layers 15′ and 59 of theLamb wave element 14 and the solidly mountedLamb wave resonator 52 include different piezoelectric material. - A loop circuit can include a solidly mounted Lamb wave element. For example, such a Lamb wave element and a resonator of an acoustic wave filter coupled to the loop circuit can be implemented in accordance with any suitable principles and advantages of the acoustic wave devices of
FIGS. 6 to 10 . The acoustic wave devices ofFIGS. 6 to 10 can also be implemented in other applications. Any suitable combination of features of acoustic wave devices ofFIGS. 6 to 10 can be implemented together with each other. -
FIG. 6 is a diagram of cross section of anacoustic wave device 60 that includes a solidly mountedLamb wave element 64 and anFBAR 12′ according to an embodiment. TheFBAR 12′ and the solidly mountedLamb wave element 64 are implemented on acommon substrate 19. TheFBAR 12′ can be included in an acoustic wave filter and the solidly mountedLamb wave element 64 can be included in a loop circuit. The solidly mountedLamb wave element 64 can be a solidly mounted Lamb wave resonator in certain instances. The solidly mountedLamb wave element 64 can be a delay line in some instances. A Lamb wave delay line can include two sets of interdigital transducers. - The
Lamb wave element 64 includes feature of a SAW resonator and an SMR. As illustrated, theLamb wave element 64 includes apiezoelectric layer 15′″, anIDT electrode 16 on thepiezoelectric layer 15′″, and anelectrode 17. Thepiezoelectric layer 15′″ can be an aluminum nitride layer. In other instances, thepiezoelectric layer 15′″ can be any other suitable piezoelectric layer. The frequency of theLamb wave element 64 can be based on the geometry of theIDT electrode 16. Theelectrode 17 can be grounded in certain instances. In some other instances, theelectrode 17 can be floating. TheLamb wave element 64 includes an acoustic mirror located between thesubstrate 19 and theelectrode 17. The illustrated acoustic mirror includesBragg reflectors 65. As illustrated, theBragg reflectors 65 include alternating low impedance andhigh impedance layers Bragg reflectors 65 can include silicon dioxide layers and tungsten layers. As another example, theBragg reflectors 65 can include silicon dioxide layers and molybdenum layers. Any other suitable Bragg reflectors can alternatively or additionally be included in theLamb wave element 64. - In the
acoustic wave device 60, theLamb wave element 64 and theFBAR 12′ can share apiezoelectric layer 15′″. In some other embodiments, theLamb wave element 64 and theFBAR 12′ can include piezoelectric layers of different material. Thepiezoelectric layer 15′″ can have a different shape than piezoelectric layers in other embodiments that have different resonator combinations. TheLamb wave element 64 and theFBAR 12′ can be disposed on acommon substrate 19. Thesubstrate 19 can be a semiconductor substrate. For example, thesubstrate 19 can be a semiconductor substrate. Thesubstrate 19 can be any other suitable substrate, such as a quartz substrate, a sapphire substrate, or a spinel substrate. -
FIG. 7 is a diagram of cross section of anacoustic wave device 70 that includes a solidly mountedLamb wave element 64 and anSMR 22 according to an embodiment. In theacoustic wave device 70, theSMR 22 and theLamb wave element 64 are implemented on acommon substrate 19. TheSMR 22 can be included in an acoustic wave filter and theLamb wave element 64 can be included in a loop circuit. The solidly mountedLamb wave element 64 is structurally similar to theSMR 22, except that the solidly mountedLamb wave element 64 includes anIDT electrode 16 and theSMR 22 includes anelectrode 13A having a different shape than theIDT electrode 16 over thepiezoelectric layer 15′. The Bragg reflectors 65 for the solidly mountedLamb wave element 64 and theBragg reflectors 24 for theSMR 22 can be separated by material of thesubstrate 19. For instance, semiconductor material of asemiconductor substrate 19 can separateBragg reflectors 24 fromBragg reflectors 65. The Bragg reflectors 65 and 24 can include the same materials in certain applications. The Bragg reflectors 65 and 24 can include different materials in certain applications. In some applications, Bragg reflectors can form a common acoustic mirror below theLamb wave element 64 and theSMR 22. Thepiezoelectric layers 15′″ and 68 of the solidly mountedLamb wave element 64 and theSMR 22, respectively, can include the same piezoelectric material in certain applications. Thepiezoelectric layers 15′″ and 68 of the solidly mountedLamb wave element 64 and theSMR 22, respectively, can include different piezoelectric material in various applications. -
FIG. 8 is a diagram of cross section of anacoustic wave device 80 that includes a solidly mountedLamb wave element 64 and aSAW resonator 32 according to an embodiment. The solidly mountedLamb wave element 64 and theSAW resonator 32 can be on acommon substrate 19. TheSAW resonator 32 can be included in an acoustic wave filter and theLamb wave element 64 can be included in a loop circuit. Thepiezoelectric layers 15″″ and 35 of the solidly mountedLamb wave element 64 and theSAW resonator 32, respectively, can include the same piezoelectric material in certain applications. Thepiezoelectric layers 15″″ and 35 of the solidly mountedLamb wave element 64 and theSAW resonator 32, respectively, can include different piezoelectric material in various applications. -
FIG. 9 is a diagram of cross section of anacoustic wave device 90 that includes a solidly mountedLamb wave element 64 of and aLamb wave resonator 42′ according to an embodiment. TheLamb wave resonator 42′ is a free-standing Lamb wave resonator. The solidly mountedLamb wave element 64 and theLamb wave resonator 42′ can include the same piezoelectric material, such as aluminum nitride, lithium niobate, or lithium tantalate. In some other applications, the solidly mountedLamb wave element 64 and theLamb wave resonator 42′ can include piezoelectric layers of different material. The solidly mountedLamb wave element 64 and theLamb wave resonator 42′ can be disposed on acommon substrate 19. TheLamb wave resonator 42′ can be included in an acoustic wave filter and theLamb wave element 64 can be included in a loop circuit. -
FIG. 10 is a diagram of cross section of anacoustic wave device 100 that includes a solidly mountedLamb wave element 64 and a solidly mountedLamb wave resonator 52 according to an embodiment. These solidly mounted Lamb wave elements can be structurally similar or the same. In theacoustic wave device 100, the solidly mountedLamb wave resonator 52 and theLamb wave element 64 are implemented on acommon substrate 19. The solidly mountedLamb wave resonator 52 can be included in an acoustic wave filter and theLamb wave element 64 can be included in a loop circuit. Semiconductor material of thesemiconductor substrate 19 can separate Bragg reflectors of these solidly mounted Lamb wave elements. The Bragg reflectors 65 and 56 can include the same materials in certain applications. The Bragg reflectors 65 and 56 can include different materials in certain applications. In some applications, Bragg reflectors can form a common acoustic mirror below theLamb wave element 64 and the solidly mountedLamb wave resonator 52. Thepiezoelectric layers 15′″ and 59 of the solidly mountedLamb wave element 64 and the solidly mountedLamb wave resonator 52, respectively, can include the same piezoelectric material in certain applications. Thepiezoelectric layers 15′″ and 68 of the solidly mountedLamb wave element 64 and the solidly mountedLamb wave resonator 52, respectively, can include different piezoelectric material in various applications. - Lamb wave elements can include an IDT electrode on a piezoelectric layer and reflective gratings disposed on the piezoelectric layer on opposing sides of the IDT electrode. The reflective gratings can reflect acoustic waves induced by the IDT electrode to form a resonant cavity. The reflective gratings can include a periodic pattern of metal on a piezoelectric layer.
FIGS. 11A to 11F are diagrams of cross sections of Lamb wave elements with gratings. A Lamb wave element in a loop circuit can be implemented with any suitable principles and advantages of any of the Lamb wave elements ofFIGS. 11A to 11F . A Lamb wave resonator in a filter can be implemented with any suitable principles and advantages of any of the Lamb wave elements ofFIGS. 11A to 11F . Although the Lamb wave elements ofFIGS. 11A to 11F are free-standing resonators, any suitable principles and advantages of these Lamb wave resonators can be applied to any other suitable Lamb wave elements. -
FIG. 11A illustrates aLamb wave element 110 that includes anIDT electrode 112,gratings piezoelectric layer 115, and anelectrode 116. TheIDT electrode 112 is on thepiezoelectric layer 115. In the illustrated cross section, alternate ground and signal metals are included in the IDT electrodes.Gratings piezoelectric layer 115 and disposed on opposing sides of theIDT electrodes 112. The illustratedgratings electrode 116 and theIDT electrode 112 are on opposite sides of thepiezoelectric layer 115. Thepiezoelectric layer 115 can be aluminum nitride, for example. Theelectrode 116 can be grounded. -
FIG. 11B illustrates aLamb wave element 110′. TheLamb wave element 110′ is like theLamb wave element 110 ofFIG. 11A except that theLamb wave element 110′ includes a floatingelectrode 116′. -
FIG. 11C illustrates aLamb wave element 110″ without an electrode on a side of thepiezoelectric layer 115 that opposes theIDT electrode 112. TheLamb wave element 110″ is otherwise like theLamb wave element 110 ofFIG. 11A . -
FIG. 11D illustrates aLamb wave element 110′″ that includes anIDT electrode 117 andgratings piezoelectric layer 115 that is opposite to a first side on which theIDT electrode 112 andgratings IDT electrodes -
FIG. 11E illustrates aLamb wave element 110″ that includes anIDT electrode 117′ andgratings piezoelectric layer 115 that is opposite to a first side on which theIDT electrode 112 andgratings IDT electrodes -
FIG. 11F illustrates aLamb wave element 110″ “‘ that includes anIDT electrode 117” andgratings piezoelectric layer 115 that is opposite to a first side on which the IDT electrode 112’ andgratings IDT 112′ includes only signal electrodes and theIDT electrode 117″ includes only ground electrodes. - Lamb wave elements can include an IDT electrode with free edges. Suspended free edges of a piezoelectric layer can provide acoustic wave reflection to form a resonant cavity.
FIGS. 12A to 12F are diagrams of cross sections of Lamb wave elements with free edges. A Lamb wave element in a loop circuit can be implemented with any suitable principles and advantages of any of the Lamb wave elements ofFIGS. 12A to 12F . A Lamb wave resonator in a filter can be implemented with any suitable principles and advantages of any of the Lamb wave elements ofFIGS. 12A to 12F . Although the Lamb wave elements ofFIGS. 12A to 12F are free-standing elements, any suitable principles and advantages of these Lamb wave elements can be applied to other Lamb wave elements. -
FIG. 12A illustrates aLamb wave element 120 that includesIDT electrode 112,piezoelectric layer 115, and anelectrode 116. TheIDT electrode 112 is on thepiezoelectric layer 115. In the illustrated cross section, alternate ground and signal electrodes are included in the IDT electrodes. Thepiezoelectric layer 115 has free edges on opposing sides of theIDT electrode 112. Theelectrode 116 and theIDT electrode 112 are on opposite sides of thepiezoelectric layer 115. Thepiezoelectric layer 115 can be aluminum nitride, for example. Theelectrode 116 can be grounded. -
FIG. 12B illustrates aLamb wave element 120′. TheLamb wave element 120′ is like theLamb wave element 120 ofFIG. 12A except that theLamb wave element 120′ includes a floatingelectrode 116′. -
FIG. 12C illustrates aLamb wave element 120″ without an electrode on a side of thepiezoelectric layer 115 that opposes theIDT electrode 112. TheLamb wave element 120″ is otherwise like theLamb wave element 120 ofFIG. 12A . -
FIG. 12D illustrates aLamb wave element 120′″ that includes anIDT electrode 117 on a second side of thepiezoelectric layer 115 that is opposite to a first side on which theIDT electrode 112 is disposed. The signal and ground electrodes are offset relative to each other for theIDT electrodes -
FIG. 12E illustrates aLamb wave element 120″ that includes anIDT electrode 117′ on a second side of thepiezoelectric layer 115 that is opposite to a first side on which theIDT electrode 112 is disposed. The signal and ground electrodes are aligned with each other for theIDT electrodes -
FIG. 12F illustrates aLamb wave element 120″″′ that includes anIDT electrode 117″ on a second side of thepiezoelectric layer 115 that is opposite to a first side on which theIDT electrode 112′ is disposed. In the illustrated cross section, theIDT electrode 112′ includes only signal electrodes and theIDT electrode 117″ includes only ground electrodes. - The Lamb wave loop circuits discussed herein can be coupled to an acoustic wave filter. For instance, a Lamb wave element can be coupled to an acoustic wave filter of a duplexer or other multiplexer (e.g., a quadplexer, hexaplexer, octoplexer, etc.).
FIGS. 13, 15, 17, and 19 are schematic diagrams that illustrate example duplexers that include a Lamb wave loop circuit coupled to an acoustic wave filter. Any suitable principles and advantages discussed with reference to and/or illustrated inFIGS. 1A to 12F can be applied to any of the example duplexers ofFIGS. 13, 15, 17, and 19 . Any suitable principles and advantages of the embodiments ofFIGS. 13, 15, 17, and 19 can be implemented together with each other. -
FIG. 13 is a schematic diagram of aduplexer 130 with aloop circuit 133 for a transmitfilter 132. Theduplexer 130 includes a transmitfilter 132, a receivefilter 134, and aloop circuit 133. The transmitfilter 132 and the receivefilter 134 are coupled together at a common node, which is an antenna node inFIG. 13 . Anantenna 135 is coupled to the common node of theduplexer 130. A shunt inductor L1 can be coupled between theantenna 135 and ground. - The transmit
filter 132 can filter an RF signal received at the transmit port TX for transmission via theantenna 135. A series inductor L2 can be coupled between the transmit port TX and acoustic wave resonators of the transmitfilter 132. The transmitfilter 132 is an acoustic wave filter that includes acoustic wave resonators arranged as a ladder filter. The transmitfilter 132 includes series resonators T01, T03, T05, T07, T09 and shunt resonators T02, T04, T06, T08. The transmitfilter 132 can include any suitable number of series resonators and any suitable number of shunt resonators. The acoustic wave resonators of the transmitfilter 132 can include BAW resonators, such as FBARs and/or SMRs. In some instances, the acoustic wave resonators of the transmitfilter 132 can include SAW resonators or Lamb wave resonators. In certain applications, the resonators of the transmitfilter 132 can include two or more types of resonators (e.g., one or more SAW resonators and one or more BAW resonators). - A
loop circuit 133 is coupled to the transmitfilter 132. Theloop circuit 133 can be coupled to an input resonator T01 and an output resonator T09 of the transmit filter. In some other instances, theloop circuit 133 can be coupled to a different node of the ladder circuit than illustrated. Theloop circuit 133 can apply a signal having approximately the same amplitude and an opposite phase to a signal component to be canceled. Theloop circuit 133 includesLamb wave elements filter 132 by capacitors CAP02 and CAP01, respectively. TheLamb wave elements Lamb wave elements Lamb wave element 14 ofFIG. 1A , in which eachLamb wave element Lamb wave element 14. In this example, the transmitfilter 132 can include an FBAR implemented on the same substrate of a die as theLamb wave element 14. The capacitors CAP01 and CAP02 are example attenuation elements that can coupled the transmitfilter 132 to theloop circuit 133. In various applications, an attenuation element can include a resistor, an inductor, a capacitor, or any suitable combination thereof. Any suitable principles and advantages of the Lamb wave elements of a loop circuit discussed herein can be implemented in theloop circuit 133. Theloop circuit 133 can be implemented in accordance with any suitable principles and advantages described in U.S. Pat. Nos. 9,246,533 and/or 9,520,857, the disclosures of these patents are hereby incorporated by reference in their entireties herein. - The receive
filter 134 can filter a received RF signal received by theantenna 135 and provide a filtered RF signal to a receive port RX. The receivefilter 134 is an acoustic wave filter that includes acoustic wave resonators arranged as a ladder filter. The receivefilter 134 includes series resonators R01, R03, R05, R07, R09 and shunt resonators R02, R04, R06, R08. The receivefilter 134 can include any suitable number of series resonators and any suitable number of shunt resonators. The acoustic wave resonators of the receivefilter 134 can include BAW resonators, such as FBARs and/or SMRs. In some instances, the acoustic wave resonators of the receivefilter 134 can include SAW resonators or Lamb wave resonators. In certain applications, the resonators of the receivefilter 134 can include two or more types of resonators (e.g., one or more SAW resonators and one or more BAW resonators). A series inductor L3 can be coupled between the acoustic wave resonators of the receivefilter 134 and the receive port RX. -
FIG. 14 is a graph comparing isolation for theduplexer 130 ofFIG. 13 to a corresponding duplexer without a loop circuit. The acoustic wave properties of the lowest-order symmetric (S0) Lamb wave mode for a Lamb wave resonator with an aluminum nitride piezoelectric layer were used to study the loop circuits for BAW filters. The Lamb wave S0 mode for such a resonator in the simulations was assumed to have a velocity of ˜9000 m/s and a K2 of ˜2%. A Band 7 BAW duplexer was used in the simulations. The graph inFIG. 14 indicates that theloop circuit 133 improves receive isolation. The improvement can be about 5 decibels (dB) in certain instances as indicated byFIG. 14 . -
FIG. 15 is a schematic diagram of aduplexer 150 with a loop circuit for a receivefilter 134. Theduplexer 150 is like theduplexer 130 ofFIG. 13 , except that theduplexer 150 includes aloop circuit 153 for the receivefilter 134. Aloop circuit 153 is coupled to the receivefilter 134. Theloop circuit 153 can be coupled to an input resonator R09 and an output resonator R01 of the receivefilter 134. In some other instances, theloop circuit 153 can be coupled to a different node of the ladder circuit of the receivefilter 134 than illustrated. Theloop circuit 153 includesLamb wave elements filter 134 by capacitors CAP04 and CAP03, respectively. Any suitable principles and advantages of the Lamb wave elements of a loop circuit discussed herein can be implemented in theloop circuit 153. For example, theLamb wave elements Lamb wave element 14 ofFIG. 14A . -
FIG. 16A is a graph comparing isolation for theduplexer 150 ofFIG. 15 to a corresponding duplexer without a loop circuit. The same simulation assumptions were used to generate the graphs ofFIG. 16A andFIG. 16B as for generating the graph ofFIG. 14 . The graph ofFIG. 16A indicates that theloop circuit 153 improves transmit isolation. -
FIG. 16B is a graph comparing receive band rejection for theduplexer 150 ofFIG. 15 to a corresponding duplexer without a loop circuit. This graph illustrates that theloop circuit 153 can suppress rejection at a lower frequency range for the receive band. -
FIG. 17 is a schematic diagram of aduplexer 170 with afirst loop circuit 133 for a transmitfilter 132 and asecond loop circuit 153 for a receivefilter 134.FIG. 17 illustrates that separate loop circuits can be implemented for a transmit filter and a receive filter. A loop circuit can be implemented for an acoustic wave filter to bring the parameter of the acoustic wave filter within a specification. For example, a loop circuit can be implemented to bring isolation of an acoustic wave filter to be less than −60 dB to meet a specification for isolation if the acoustic wave filter would not otherwise meet the specification for isolation. -
FIG. 18 is a graph comparing isolation for theduplexer 170 ofFIG. 17 to a corresponding duplexer without loop circuits. This graph indicates that theloop circuits duplexer 170 improve both transmit and receive isolation. -
FIG. 19 is a schematic diagram of aduplexer 190 with aloop circuit 193. Theduplexer 190 is like theduplexer 130 ofFIG. 13 , except that theduplexer 190 includes aloop circuit 193 that is coupled across the transmitfilter 132 and the receivefilter 134. Theloop circuit 193 is coupled to the receive port RX and the transmit port TX. In some other instances, theloop circuit 193 can be coupled to a different node of the ladder circuit of the receivefilter 134 and/or a different node of the transmitfilter 132 than illustrated. Theloop circuit 193 includes Lamb wave elements 196 and 197. The Lamb wave element 196 is coupled to the transmit filter by capacitor CAP01. The Lamb wave element 197 is coupled to the receivefilter 134 by capacitor C02. Any other suitable attenuation element, such as a resistor or an inductor, can be implemented in place of or in addition to the capacitor C01 and/or the capacitor C02. Any suitable principles and advantages of the Lamb wave elements of a loop circuit discussed herein can be implemented in theloop circuit 193. For example, the Lamb wave elements 196 and 197 can together correspond to theLamb wave element 14 ofFIG. 14A . - Acoustic wave devices disclosed herein can be implemented in acoustic wave filters. Such acoustic wave filters can be band pass filters arranged to filter radio frequency signals including radio frequency signals at up to and including millimeter wave frequencies. In certain applications, an acoustic wave filter assembly can include a first filter that includes a Lamb wave resonator and a second filter that includes a different type of resonator, such as an FBAR. The first filter and the second filter can be included on a single die. A schematic diagram of an example acoustic wave filter assembly will be discussed with reference to
FIG. 20 . Although an acoustic wave filter assembly with two filters will be described for illustrative purposes, any suitable principles and advantages can be applied to acoustic wave filter assemblies with more than two filters. -
FIG. 20 is a schematic diagram of an acousticwave filter assembly 200 that includes afirst filter 202 with a Lamb wave resonator and asecond filter 204 with a different type of acoustic wave resonator, in which the Lamb wave resonator and the different type of resonator are implemented on the same substrate according to an embodiment. The acousticwave filter assembly 200 can include any of the acoustic wave devices ofFIGS. 1A to 10 . - The
first filter 202 includes Lamb wave resonators L01, L02, L03, L04, L05, L06, L07, L08, and L09 arranged as a ladder filter between an RF port RF1 and an antenna port ANT. The RF port RF1 can be a transmit port or a receive port. Thefirst filter 202 is a band pass filter having a first pass band and arranged to filter a first RF signal. - The
second filter 204 includes acoustic wave resonators B01, B02, B03, B04, B05, B06, B07, B08, and B09 arranged as a ladder filter between an RF port RF2 and an antenna port ANT. The RF port RF2 can be a transmit port or a receive port. Thesecond filter 204 is a band pass filter having a second pass band and arranged to filter a second RF signal. The acoustic wave resonators B01 to B09 of thesecond filter 204 are a different type of acoustic wave resonators than the Lamb wave resonators L01 to L09 of thefirst filter 202. For example, the acoustic wave resonators B01 to B09 of thesecond filter 204 can be BAW resonators, such as FBARs. - Some or all of the Lamb wave resonators L01 to L09 of the
first filter 202 can be implemented on the same substrate of die as some or all of the acoustic wave resonators B01 to B09 of thesecond filter 204. In certain instances, one or more resonators of the Lamb wave resonators L01 to L09 include a piezoelectric layer that includes the same material (e.g., aluminum nitride) as the piezoelectric layer of one or more of the acoustic wave resonators B01 to B09. In some applications, a multiplexer (e.g., a duplexer) can include thefirst filter 202 and thesecond filter 204 coupled together at a common node (e.g., the antenna node ANT). - Acoustic wave devices disclosed herein can be implemented in an acoustic wave filter that includes a Lamb wave resonator and a different type of acoustic wave resonator. Such an acoustic wave filter can include any suitable acoustic wave device disclosed herein. The acoustic wave filter can be band pass filters arranged to filter radio frequency signals. The Lamb wave resonator and the different type of acoustic wave resonator can be implemented on the same substrate of a die. The substrate can be a silicon substrate, for example. In some instances, the different type of acoustic wave resonator can be an FBAR. The different type of acoustic wave resonator and the Lamb wave resonator can include respective piezoelectric layer of the same piezoelectric material (for example, aluminum nitride) in certain applications. Example acoustic wave filters with a Lamb wave resonator and another type of acoustic wave resonator will be discussed with reference to
FIGS. 21A to 21F . These example acoustic wave filters can achieve desirable performance and/or loading characteristics for certain applications. Any suitable principles and advantages of these acoustic wave filters can be implemented together with each other. Moreover, any of the example acoustic wave filters ofFIGS. 21A to 21F can include an acoustic wave device in accordance with any suitable principles and advantages ofFIGS. 1A to 10 . -
FIG. 21A is a schematic diagram of anacoustic wave filter 210 that includes series Lamb wave resonators and other shunt acoustic wave resonators according to an embodiment. The series Lamb wave resonators LS01, LS02, LS03, LS04, and LS05 and other shunt acoustic wave resonators BP01, BP02, BP03, BP04, and BP05 are arranged as a ladder filter coupled between an RF port RF and an antenna port ANT. The RF port RF can be a transmit port of a transmit filter. The RF port can be a receive port of a receive filter. Any suitable number of series resonators and any suitable number of shunt resonators can be included in theacoustic wave filter 210. The other shunt acoustic wave resonators BP01, BP02, BP03, BP04, and BP05 can be FBARs. In some other instances, the other shunt acoustic wave BP01, BP02, BP03, BP04, and BP05 can be SAW resonators or SMRs. -
FIG. 21B is a schematic diagram of anacoustic wave filter 212 that includes shunt Lamb wave resonators and other series acoustic wave resonators according to an embodiment. The shunt Lamb wave resonators LP01, LP02, LP03, LP04, and LP05 and other series acoustic wave resonators BS01, BS02, BS03, BSO4, and BS05 are arranged as a ladder filter coupled between an RF port RF and an antenna port ANT. The RF port RF can be a transmit port of a transmit filter. The RF port can be a receive port of a receive filter. Any suitable number of series resonators and any suitable number of shunt resonators can be included in theacoustic wave filter 212. The other series acoustic wave resonators BS01, BS02, BS03, BSO4, and BS05 can be FBARs. In some other instances, the other shunt acoustic wave BS01, BS02, BS03, BSO4, and BS05 can be SAW resonators or SMRs. -
FIG. 21C is a schematic diagram of anacoustic wave filter 214 that includes a series Lamb wave resonator LS and other acoustic wave resonators B01 to B08 coupled to an antenna port ANT via the series Lamb wave resonator LS according to an embodiment. The other acoustic wave resonators B01 to B08 can be SAW resonators or BAW resonators. -
FIG. 21D is a schematic diagram of anacoustic wave filter 216 that includes a series Lamb wave resonator LS and other acoustic wave resonators B02 to B09 coupled to a radio frequency port RF via the series Lamb wave resonator LS according to an embodiment. The other acoustic wave resonators B02 to B09 can be SAW resonators or BAW resonators. -
FIG. 21E is a schematic diagram of anacoustic wave filter 218 that includes a series Lamb wave resonator LS and other acoustic wave resonators B01 to B04 and B06 to B09 according to an embodiment. In theacoustic wave filter 218, a first other series resonator B01 is coupled between the series Lamb wave resonator LS and the RF port RF. A second other series resonator B09 is coupled between the series Lamb wave resonator LS and the antenna port ANT in theacoustic wave filter 218. The other acoustic wave resonators B01 to B04 and B06 to B09 can be SAW resonators or BAW resonators. -
FIG. 21F is a schematic diagram of anacoustic wave filter 219 that includes a shunt Lamb wave resonator LP and other acoustic wave resonators B01 to B05 and B07 to B09 according to an embodiment. - In the
acoustic wave filter 219, a first other series resonator B01 is coupled between the shunt Lamb wave resonator LP and the RF port RF. A second other series resonator B09 is coupled between the shunt Lamb wave resonator LP and the antenna port ANT in theacoustic wave filter 219. The other acoustic wave resonators B01 to B05 and B07 to B09 can be SAW resonators or BAW resonators. - The acoustic wave devices and/or loop circuits discussed herein can be implemented in a variety of packaged modules. Some example packaged modules will now be discussed in which any suitable principles and advantages of the Lamb wave loop circuits discussed herein can be implemented.
FIGS. 22A, 22B, 22C, and 22D are schematic block diagrams of illustrative packaged modules according to certain embodiments. -
FIG. 22A is a schematic block diagram of amodule 220 that includes aduplexer 222 with a Lamb wave loop circuit and anantenna switch 223. Themodule 220 can include a package that encloses the illustrated elements. Theduplexer 222 with a Lamb wave loop circuit and theantenna switch 223 can be disposed on a common packaging substrate. The packaging substrate can be a laminate substrate, for example. Theduplexer 222 can include a Lamb wave loop circuit in accordance with any suitable principles and advantages discussed herein. Theantenna switch 223 can be a multi-throw radio frequency switch. Theantenna switch 223 can selectively electrically couple a common node of theduplexer 222 to an antenna port of themodule 220. -
FIG. 22B is a schematic block diagram of amodule 220′ that includes afirst filter 222A with a Lamb wave loop circuit, asecond filter 222B with a Lamb wave loop circuit, and anantenna switch 223′. Themodule 220′ illustrates that two different filters with Lamb wave loop circuits can be included in a module. Thefirst filter 222A with a Lamb wave loop circuit can be implemented on a different die than thesecond filter 222B with a Lamb wave loop circuit. Theantenna switch 223′ can selectively electrically couple a port of thefirst filter 222A and/or thesecond filter 222B to an antenna port of themodule 220′. -
FIG. 22C is a schematic block diagram of amodule 224 that includes apower amplifier 225, aswitch 226, and aduplexer 222 with a Lamb wave loop circuit. Thepower amplifier 225 can amplify a radio frequency signal. Theswitch 226 can selectively electrically couple an output of thepower amplifier 225 to a transmit port of theduplexer 222. Theduplexer 222 can include a Lamb wave loop circuit in accordance with any suitable principles and advantages discussed herein. -
FIG. 22D is a schematic block diagram of amodule 227 that includespower amplifier 225, aswitch 226, aduplexer 222 with a Lamb wave loop circuit, and anantenna switch 223. Themodule 227 is similar to themodule 224 ofFIG. 22C , except themodule 227 additionally includes theantenna switch 223. - The acoustic wave filters with a Lamb wave resonator and/or another type of acoustic wave resonator disclosed herein can be implemented in a variety of packaged modules. Some example packaged modules will now be discussed in which any suitable principles and advantages of the acoustic wave filters with a Lamb wave resonator and a different type of acoustic wave resonator discussed herein can be implemented.
FIGS. 23A, 23B, and 23C are schematic block diagrams of illustrative packaged modules according to certain embodiments. -
FIG. 23A is a schematic block diagram of amodule 230 that includes one ormore filters 232 with a Lamb wave resonator and another type of acoustic wave resonator. The one ormore filters 232 can include any suitable combination of features disclosed in association withFIGS. 20 to 21F . Themodule 230 can include a package that encloses the illustrated elements. The one ormore filters 232 with a Lamb wave resonator and another type of acoustic wave resonator and theantenna switch 233 can be disposed on a common packaging substrate. The packaging substrate can be a laminate substrate, for example. Theantenna switch 233 can be a multi-throw radio frequency switch. Theantenna switch 233 can selectively electrically couple any suitable number of the one or more of thefilters 232 to an antenna port of themodule 230. -
FIG. 23B is a schematic block diagram of amodule 234 that includes apower amplifier 235, aswitch 236, and one ormore filters 232 with a Lamb wave resonator and another type of acoustic wave resonator. Thepower amplifier 235 can amplify a radio frequency signal. Theswitch 236 can selectively electrically couple an output of thepower amplifier 235 to a transmit port of theduplexer 232. The one ormore filters 232 with a Lamb wave resonator and another type of acoustic wave resonator can be implemented in accordance with any suitable principles and advantages discussed herein. -
FIG. 23C is a schematic block diagram of amodule 237 that includespower amplifier 235, aswitch 236, one ormore filters 232 with a Lamb wave resonator and another type of acoustic wave resonator, and anantenna switch 233. Themodule 237 is similar to themodule 234 ofFIG. 23B , except themodule 237 additionally includes theantenna switch 233. -
FIG. 24 is a schematic block diagram of awireless communication device 240 that includesfilters 243 with one or more Lamb wave elements in accordance with one or more embodiments. For example, thefilters 243 can include a duplexer with a Lamb wave loop circuit in accordance with any suitable principles and advantages disclosed herein. Thefilters 243 can include a first filter with a Lamb wave resonator and a second filter with a different type of acoustic wave resonator, in which the Lamb wave resonator and the different type of acoustic wave resonator are implemented on a common substrate of a die. In certain instances, thefilters 243 can include a filter that includes a Lamb wave resonator and a different type of acoustic wave resonator. - The
wireless communication device 240 can be any suitable wireless communication device. For instance, awireless communication device 240 can be a mobile phone, such as a smart phone. As illustrated, thewireless communication device 240 includes anantenna 241, an RFfront end 242 that includes thefilters 243, anRF transceiver 244, aprocessor 245, amemory 246, and a user interface. Theantenna 241 can transmit RF signals provided by the RFfront end 242. Theantenna 241 can receive RF signals and provide the received RF signals to the RFfront end 242 for processing. - The RF
front end 242 can include one or more power amplifiers, one or more low noise amplifiers, RF switches, receive filters, transmit filters, duplex filters, filters of a multiplexer, filters of a diplexers or other frequency multiplexing circuit, or any suitable combination thereof. Thefilters 243 of the RFfront end 242 can be implemented in accordance with any suitable principles and advantages disclosed herein. The RFfront end 242 can transmit and receive RF signals associated with any suitable communication standards. Any of the acoustic wave devices and/or Lamb wave loop circuits discussed herein can be implemented in the RFfront end 242. - The
RF transceiver 244 can provide RF signals to the RFfront end 242 for amplification and/or other processing. TheRF transceiver 244 can also process an RF signal provided by a low noise amplifier of the RFfront end 242. TheRF transceiver 244 is in communication with theprocessor 245. Theprocessor 245 can be a baseband processor. Theprocessor 245 can provide any suitable base band processing functions for thewireless communication device 240. Thememory 246 can be accessed by theprocessor 245. Thememory 246 can store any suitable data for thewireless communication device 240. Theuser interface 247 can be any suitable user interface, such as a display with touch screen capabilities. - Any of the embodiments described above can be implemented in association with mobile devices such as cellular handsets. The principles and advantages of the embodiments can be used for any systems or apparatus, such as any uplink wireless communication device, that could benefit from any of the embodiments described herein. The teachings herein are applicable to a variety of systems. Although this disclosure includes some example embodiments, the teachings described herein can be applied to a variety of structures. Any of the principles and advantages discussed herein can be implemented in association with RF circuits configured to process signals in a range from about 30 kHz to 300 GHz, such as in a range from about 450 MHz to 8.5 GHz.
- Aspects of this disclosure can be implemented in various electronic devices. Examples of the electronic devices can include, but are not limited to, consumer electronic products, parts of the consumer electronic products such as packaged radio frequency modules, uplink wireless communication devices, wireless communication infrastructure, electronic test equipment, etc. Examples of the electronic devices can include, but are not limited to, a mobile phone such as a smart phone, a wearable computing device such as a smart watch or an ear piece, a telephone, a television, a computer monitor, a computer, a modem, a hand-held computer, a laptop computer, a tablet computer, a microwave, a refrigerator, a vehicular electronics system such as an automotive electronics system, a stereo system, a digital music player, a radio, a camera such as a digital camera, a portable memory chip, a washer, a dryer, a washer/dryer, a copier, a facsimile machine, a scanner, a multi-functional peripheral device, a wrist watch, a clock, etc. Further, the electronic devices can include unfinished products.
- Unless the context clearly requires otherwise, throughout the description and the claims, the words “comprise,” “comprising,” “include,” “including” and the like are to be construed in an inclusive sense, as opposed to an exclusive or exhaustive sense; that is to say, in the sense of “including, but not limited to.” The word “coupled”, as generally used herein, refers to two or more elements that may be either directly connected, or connected by way of one or more intermediate elements. Likewise, the word “connected”, as generally used herein, refers to two or more elements that may be either directly connected, or connected by way of one or more intermediate elements. Additionally, the words “herein,” “above,” “below,” and words of similar import, when used in this application, shall refer to this application as a whole and not to any particular portions of this application. Where the context permits, words in the above Detailed Description using the singular or plural number may also include the plural or singular number respectively. The word “or” in reference to a list of two or more items, that word covers all of the following interpretations of the word: any of the items in the list, all of the items in the list, and any combination of the items in the list.
- Moreover, conditional language used herein, such as, among others, “can,” “could,” “might,” “may,” “e.g.,” “for example,” “such as” and the like, unless specifically stated otherwise, or otherwise understood within the context as used, is generally intended to convey that certain embodiments include, while other embodiments do not include, certain features, elements and/or states. Thus, such conditional language is not generally intended to imply that features, elements and/or states are in any way required for one or more embodiments or that one or more embodiments necessarily include logic for deciding, with or without author input or prompting, whether these features, elements and/or states are included or are to be performed in any particular embodiment.
- While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the disclosure. Indeed, the novel apparatus, methods, and systems described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the methods and systems described herein may be made without departing from the spirit of the disclosure. For example, while blocks are presented in a given arrangement, alternative embodiments may perform similar functionalities with different components and/or circuit topologies, and some blocks may be deleted, moved, added, subdivided, combined, and/or modified. Each of these blocks may be implemented in a variety of different ways. Any suitable combination of the elements and acts of the various embodiments described above can be combined to provide further embodiments. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the disclosure.
Claims (20)
1. An acoustic wave filter assembly comprising:
an acoustic wave filter including a plurality of types of acoustic wave resonators, the plurality of types of acoustic wave resonators including a Lamb wave resonator and a second acoustic wave resonator, the second acoustic wave resonator being a different type of acoustic wave resonator than the Lamb wave resonator; and
a loop circuit including a capacitor and a Lamb wave element, the Lamb wave element coupled to the acoustic wave filter by way of the capacitor.
2. The acoustic wave filter assembly of claim 1 wherein the Lamb wave resonator and the second acoustic wave resonator are on a common die.
3. The acoustic wave filter assembly of claim 2 wherein the Lamb wave resonator includes a piezoelectric layer that includes a same material as a piezoelectric layer of the second acoustic wave resonator.
4. The acoustic wave filter assembly of claim 3 wherein the same material includes aluminum nitride.
5. The acoustic wave filter assembly of claim 1 wherein the second acoustic wave resonator is a bulk acoustic wave resonator.
6. The acoustic wave filter assembly of claim 1 wherein the second acoustic wave resonator is a surface acoustic wave resonator.
7. The acoustic wave filter assembly of claim 1 wherein the Lamb wave resonator is a series resonator, and the second acoustic wave resonator is a shunt resonator.
8. The acoustic wave filter assembly of claim 1 wherein the Lamb wave resonator is a shunt resonator, and the second acoustic wave resonator is a series resonator.
9. The acoustic wave filter assembly of claim 1 wherein the Lamb wave element includes at least one interdigital transducer electrode on a piezoelectric layer and gratings disposed on the piezoelectric layer on opposing sides of the at least one interdigital transducer electrode.
10. The acoustic wave filter assembly of claim 1 wherein the Lamb wave element includes an acoustic mirror positioned between a piezoelectric layer and a substrate, and the acoustic mirror includes alternating low impedance and high impedance layers.
11. A radio frequency module comprising:
an acoustic wave filter configured to filter a radio frequency signal, the acoustic wave filter including a Lamb wave resonator and a second of acoustic wave resonator, the Lamb wave resonator and the second acoustic wave resonator being implemented on a common die, and the second acoustic wave resonator being a different type of acoustic wave resonator than the Lamb wave resonator;
a loop circuit including a capacitor and a Lamb wave element, the Lamb wave element coupled to the acoustic wave filter by way of the capacitor; and
a radio frequency switch in communication with the acoustic wave filter.
12. The radio frequency module of claim 11 wherein the second acoustic wave resonator is a bulk acoustic wave resonator.
13. The radio frequency module of claim 11 wherein the second acoustic wave resonator is a surface acoustic wave resonator.
14. The radio frequency module of claim 11 further comprising a second acoustic wave filter, the second acoustic wave filter and the acoustic wave filter both being included in a multiplexer.
15. An acoustic wave filter assembly comprising:
a first acoustic wave filter configured to filter a first radio frequency signal, the first acoustic wave filter including a Lamb wave resonator implemented on a die;
a loop circuit including a capacitor and a Lamb wave element, the Lamb wave element coupled to the acoustic wave filter by way of the capacitor; and
a second acoustic wave filter configured to filter a second radio frequency signal, the second acoustic wave filter including an acoustic wave resonator implemented on the same die as the Lamb wave resonator, the acoustic wave resonator being a different type of acoustic wave resonator than the Lamb wave resonator.
16. The acoustic wave filter assembly of claim 15 wherein the acoustic wave resonator is a bulk acoustic wave resonator.
17. The acoustic wave filter assembly of claim 16 wherein the first acoustic wave filter includes a second bulk acoustic wave resonator implemented on the same die as the Lamb wave resonator.
18. The acoustic wave filter assembly of claim 15 wherein the Lamb wave resonator includes a piezoelectric layer that includes a same material as a piezoelectric layer of the acoustic wave resonator.
19. The acoustic wave filter assembly of claim 15 wherein the acoustic wave resonator is a surface acoustic wave resonator.
20. The acoustic wave filter assembly of claim 15 wherein the first acoustic wave filter and the second acoustic wave filter are coupled together at a common node of a multiplexer.
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Families Citing this family (113)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11323090B2 (en) | 2018-06-15 | 2022-05-03 | Resonant Inc. | Transversely-excited film bulk acoustic resonator using Y-X-cut lithium niobate for high power applications |
US11929731B2 (en) | 2018-02-18 | 2024-03-12 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with optimized electrode mark, and pitch |
US10637438B2 (en) | 2018-06-15 | 2020-04-28 | Resonant Inc. | Transversely-excited film bulk acoustic resonators for high power applications |
US12040779B2 (en) | 2020-04-20 | 2024-07-16 | Murata Manufacturing Co., Ltd. | Small transversely-excited film bulk acoustic resonators with enhanced Q-factor |
US11509279B2 (en) | 2020-07-18 | 2022-11-22 | Resonant Inc. | Acoustic resonators and filters with reduced temperature coefficient of frequency |
US11936358B2 (en) | 2020-11-11 | 2024-03-19 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with low thermal impedance |
US11323089B2 (en) | 2018-06-15 | 2022-05-03 | Resonant Inc. | Filter using piezoelectric film bonded to high resistivity silicon substrate with trap-rich layer |
US10790802B2 (en) | 2018-06-15 | 2020-09-29 | Resonant Inc. | Transversely excited film bulk acoustic resonator using rotated Y-X cut lithium niobate |
US10911023B2 (en) | 2018-06-15 | 2021-02-02 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with etch-stop layer |
US11323096B2 (en) | 2018-06-15 | 2022-05-03 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with periodic etched holes |
US11146232B2 (en) | 2018-06-15 | 2021-10-12 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with reduced spurious modes |
US11206009B2 (en) | 2019-08-28 | 2021-12-21 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with interdigital transducer with varied mark and pitch |
US11996827B2 (en) | 2018-06-15 | 2024-05-28 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with periodic etched holes |
US10756697B2 (en) | 2018-06-15 | 2020-08-25 | Resonant Inc. | Transversely-excited film bulk acoustic resonator |
US10601392B2 (en) * | 2018-06-15 | 2020-03-24 | Resonant Inc. | Solidly-mounted transversely-excited film bulk acoustic resonator |
US20220116015A1 (en) | 2018-06-15 | 2022-04-14 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with optimized electrode thickness, mark, and pitch |
SG10201901768XA (en) * | 2018-03-02 | 2019-10-30 | Skyworks Solutions Inc | Lamb Wave Loop Circuit For Acoustic Wave Filter |
SG10201902753RA (en) * | 2018-04-12 | 2019-11-28 | Skyworks Solutions Inc | Filter Including Two Types Of Acoustic Wave Resonators |
US11146238B2 (en) | 2018-06-15 | 2021-10-12 | Resonant Inc. | Film bulk acoustic resonator fabrication method |
US11949402B2 (en) | 2020-08-31 | 2024-04-02 | Murata Manufacturing Co., Ltd. | Resonators with different membrane thicknesses on the same die |
US10998882B2 (en) | 2018-06-15 | 2021-05-04 | Resonant Inc. | XBAR resonators with non-rectangular diaphragms |
US11201601B2 (en) | 2018-06-15 | 2021-12-14 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with multiple diaphragm thicknesses and fabrication method |
US12009798B2 (en) | 2018-06-15 | 2024-06-11 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonators with electrodes having irregular hexagon cross-sectional shapes |
US12040781B2 (en) | 2018-06-15 | 2024-07-16 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator package |
US11901878B2 (en) | 2018-06-15 | 2024-02-13 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonators with two-layer electrodes with a wider top layer |
US11888463B2 (en) | 2018-06-15 | 2024-01-30 | Murata Manufacturing Co., Ltd. | Multi-port filter using transversely-excited film bulk acoustic resonators |
US11264966B2 (en) * | 2018-06-15 | 2022-03-01 | Resonant Inc. | Solidly-mounted transversely-excited film bulk acoustic resonator with diamond layers in Bragg reflector stack |
US11876498B2 (en) | 2018-06-15 | 2024-01-16 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with multiple diaphragm thicknesses and fabrication method |
US10917072B2 (en) | 2019-06-24 | 2021-02-09 | Resonant Inc. | Split ladder acoustic wave filters |
US10826462B2 (en) | 2018-06-15 | 2020-11-03 | Resonant Inc. | Transversely-excited film bulk acoustic resonators with molybdenum conductors |
US11916539B2 (en) | 2020-02-28 | 2024-02-27 | Murata Manufacturing Co., Ltd. | Split-ladder band N77 filter using transversely-excited film bulk acoustic resonators |
US10992283B2 (en) | 2018-06-15 | 2021-04-27 | Resonant Inc. | High power transversely-excited film bulk acoustic resonators on rotated Z-cut lithium niobate |
US11171629B2 (en) | 2018-06-15 | 2021-11-09 | Resonant Inc. | Transversely-excited film bulk acoustic resonator using pre-formed cavities |
US11323095B2 (en) | 2018-06-15 | 2022-05-03 | Resonant Inc. | Rotation in XY plane to suppress spurious modes in XBAR devices |
US11967945B2 (en) | 2018-06-15 | 2024-04-23 | Murata Manufacturing Co., Ltd. | Transversly-excited film bulk acoustic resonators and filters |
US11349450B2 (en) | 2018-06-15 | 2022-05-31 | Resonant Inc. | Symmetric transversely-excited film bulk acoustic resonators with reduced spurious modes |
US11349452B2 (en) | 2018-06-15 | 2022-05-31 | Resonant Inc. | Transversely-excited film bulk acoustic filters with symmetric layout |
US11329628B2 (en) * | 2020-06-17 | 2022-05-10 | Resonant Inc. | Filter using lithium niobate and lithium tantalate transversely-excited film bulk acoustic resonators |
US11374549B2 (en) | 2018-06-15 | 2022-06-28 | Resonant Inc. | Filter using transversely-excited film bulk acoustic resonators with divided frequency-setting dielectric layers |
US11323091B2 (en) | 2018-06-15 | 2022-05-03 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with diaphragm support pedestals |
US10998877B2 (en) | 2018-06-15 | 2021-05-04 | Resonant Inc. | Film bulk acoustic resonator fabrication method with frequency trimming based on electric measurements prior to cavity etch |
US11870423B2 (en) | 2018-06-15 | 2024-01-09 | Murata Manufacturing Co., Ltd. | Wide bandwidth temperature-compensated transversely-excited film bulk acoustic resonator |
US12021496B2 (en) | 2020-08-31 | 2024-06-25 | Murata Manufacturing Co., Ltd. | Resonators with different membrane thicknesses on the same die |
US10985728B2 (en) | 2018-06-15 | 2021-04-20 | Resonant Inc. | Transversely-excited film bulk acoustic resonator and filter with a uniform-thickness dielectric overlayer |
US11996825B2 (en) | 2020-06-17 | 2024-05-28 | Murata Manufacturing Co., Ltd. | Filter using lithium niobate and rotated lithium tantalate transversely-excited film bulk acoustic resonators |
US10992284B2 (en) | 2018-06-15 | 2021-04-27 | Resonant Inc. | Filter using transversely-excited film bulk acoustic resonators with multiple frequency setting layers |
US11996822B2 (en) | 2018-06-15 | 2024-05-28 | Murata Manufacturing Co., Ltd. | Wide bandwidth time division duplex transceiver |
US10797675B2 (en) | 2018-06-15 | 2020-10-06 | Resonant Inc. | Transversely excited film bulk acoustic resonator using rotated z-cut lithium niobate |
US20220060170A1 (en) * | 2018-06-15 | 2022-02-24 | Resonant Inc. | Solidly-mounted transversely-excited film bulk acoustic device |
US10868513B2 (en) | 2018-06-15 | 2020-12-15 | Resonant Inc. | Transversely-excited film bulk acoustic filters with symmetric layout |
US11909381B2 (en) | 2018-06-15 | 2024-02-20 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonators with two-layer electrodes having a narrower top layer |
US11728785B2 (en) | 2018-06-15 | 2023-08-15 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator using pre-formed cavities |
US11228296B2 (en) | 2018-06-15 | 2022-01-18 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with a cavity having a curved perimeter |
JP2020053966A (en) * | 2018-09-24 | 2020-04-02 | スカイワークス グローバル プライベート リミテッド | Multilayer bulge frame in bulk elastic wave device |
CN109257027B (en) * | 2018-10-30 | 2020-06-30 | 开元通信技术(厦门)有限公司 | Hybrid acoustic wave resonator and preparation method thereof |
US11387808B2 (en) * | 2018-12-28 | 2022-07-12 | Skyworks Global Pte. Ltd. | Bulk acoustic wave resonator with ceramic substrate |
US11082021B2 (en) | 2019-03-06 | 2021-08-03 | Skyworks Solutions, Inc. | Advanced gain shaping for envelope tracking power amplifiers |
WO2020186261A1 (en) | 2019-03-14 | 2020-09-17 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with half-lambda dielectric layer |
US11901873B2 (en) | 2019-03-14 | 2024-02-13 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with partial BRAGG reflectors |
DE112020001765T5 (en) | 2019-04-05 | 2021-12-23 | Resonant Inc. | Packaging of a transversely excited film bulk acoustic resonator and method |
US12034423B2 (en) | 2019-06-27 | 2024-07-09 | Murata Manufacturing Co., Ltd | XBAR frontside etch process using polysilicon sacrificial layer |
US10911021B2 (en) | 2019-06-27 | 2021-02-02 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with lateral etch stop |
US11329625B2 (en) | 2019-07-18 | 2022-05-10 | Resonant Inc. | Film bulk acoustic sensors using thin LN-LT layer |
US10862454B1 (en) | 2019-07-18 | 2020-12-08 | Resonant Inc. | Film bulk acoustic resonators in thin LN-LT layers |
US11323097B2 (en) | 2019-07-24 | 2022-05-03 | Skyworks Solutions, Inc. | Bulk acoustic wave filters on shared die |
US11444576B2 (en) | 2019-09-27 | 2022-09-13 | Skyworks Solutions, Inc. | Power amplifier bias modulation for multi-level supply envelope tracking |
US20210119602A1 (en) * | 2019-10-18 | 2021-04-22 | Board Of Trustees Of The University Of Illinois | Low-loss and wide-band acoustic delay lines using aluminum nitride thin films |
US20220407494A1 (en) * | 2019-11-25 | 2022-12-22 | Epicmems(Xiamen) Co., Ltd. | Acoustic wave device and method of manufacturing the same |
US11595008B2 (en) | 2020-01-09 | 2023-02-28 | Skyworks Solutions, Inc. | Low noise amplifiers with low noise figure |
US20210273629A1 (en) | 2020-02-28 | 2021-09-02 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with multi-pitch interdigital transducer |
JP2021145282A (en) * | 2020-03-13 | 2021-09-24 | 株式会社村田製作所 | High frequency module and communication device |
JP2021158556A (en) * | 2020-03-27 | 2021-10-07 | 株式会社村田製作所 | High-frequency module and communication device |
JP2021158554A (en) * | 2020-03-27 | 2021-10-07 | 株式会社村田製作所 | High-frequency module and communication device |
US20220116020A1 (en) | 2020-04-20 | 2022-04-14 | Resonant Inc. | Low loss transversely-excited film bulk acoustic resonators and filters |
CN117254781A (en) * | 2020-04-29 | 2023-12-19 | 株式会社村田制作所 | Elastic wave device and ladder filter |
US11811391B2 (en) | 2020-05-04 | 2023-11-07 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with etched conductor patterns |
US11469733B2 (en) | 2020-05-06 | 2022-10-11 | Resonant Inc. | Transversely-excited film bulk acoustic resonators with interdigital transducer configured to reduce diaphragm stress |
US20210376814A1 (en) * | 2020-05-28 | 2021-12-02 | Resonant Inc. | Transversely-excited film bulk acoustic resonators with two-layer electrodes |
US11855595B2 (en) | 2020-06-05 | 2023-12-26 | Skyworks Solutions, Inc. | Composite cascode power amplifiers for envelope tracking applications |
US11482975B2 (en) | 2020-06-05 | 2022-10-25 | Skyworks Solutions, Inc. | Power amplifiers with adaptive bias for envelope tracking applications |
US10992282B1 (en) | 2020-06-18 | 2021-04-27 | Resonant Inc. | Transversely-excited film bulk acoustic resonators with electrodes having a second layer of variable width |
US11742828B2 (en) | 2020-06-30 | 2023-08-29 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator with symmetric diaphragm |
US11482981B2 (en) | 2020-07-09 | 2022-10-25 | Resonanat Inc. | Transversely-excited film bulk acoustic resonators with piezoelectric diaphragm supported by piezoelectric substrate |
CN111864353B (en) * | 2020-07-28 | 2021-09-07 | 中山大学 | Subminiature sound wave resonant antenna |
US11264969B1 (en) | 2020-08-06 | 2022-03-01 | Resonant Inc. | Transversely-excited film bulk acoustic resonator comprising small cells |
US11671070B2 (en) | 2020-08-19 | 2023-06-06 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonators using multiple dielectric layer thicknesses to suppress spurious modes |
US11271539B1 (en) | 2020-08-19 | 2022-03-08 | Resonant Inc. | Transversely-excited film bulk acoustic resonator with tether-supported diaphragm |
US20220069797A1 (en) * | 2020-08-31 | 2022-03-03 | Qualcomm Incorporated | Substrate comprising acoustic resonators configured as at least one acoustic filter |
US11894835B2 (en) | 2020-09-21 | 2024-02-06 | Murata Manufacturing Co., Ltd. | Sandwiched XBAR for third harmonic operation |
US11476834B2 (en) | 2020-10-05 | 2022-10-18 | Resonant Inc. | Transversely-excited film bulk acoustic resonator matrix filters with switches in parallel with sub-filter shunt capacitors |
US11405017B2 (en) | 2020-10-05 | 2022-08-02 | Resonant Inc. | Acoustic matrix filters and radios using acoustic matrix filters |
US11929733B2 (en) | 2020-10-05 | 2024-03-12 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator matrix filters with input and output impedances matched to radio frequency front end elements |
US11405019B2 (en) | 2020-10-05 | 2022-08-02 | Resonant Inc. | Transversely-excited film bulk acoustic resonator matrix filters |
US11728784B2 (en) | 2020-10-05 | 2023-08-15 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator matrix filters with split die sub-filters |
US11658639B2 (en) | 2020-10-05 | 2023-05-23 | Murata Manufacturing Co., Ltd. | Transversely-excited film bulk acoustic resonator matrix filters with noncontiguous passband |
US11463066B2 (en) | 2020-10-14 | 2022-10-04 | Resonant Inc. | Transversely-excited film bulk acoustic resonators with piezoelectric diaphragm supported by piezoelectric substrate |
CN220858075U (en) * | 2020-11-02 | 2024-04-26 | 株式会社村田制作所 | Multiplexer, high frequency module and communication device |
US12003226B2 (en) | 2020-11-11 | 2024-06-04 | Murata Manufacturing Co., Ltd | Transversely-excited film bulk acoustic resonator with low thermal impedance |
US12028039B2 (en) | 2020-11-13 | 2024-07-02 | Murata Manufacturing Co., Ltd. | Forming XBAR devices with excess piezoelectric material removed |
US11496113B2 (en) | 2020-11-13 | 2022-11-08 | Resonant Inc. | XBAR devices with excess piezoelectric material removed |
CN112332802A (en) * | 2020-11-19 | 2021-02-05 | 武汉衍熙微器件有限公司 | Transmitting filter and duplexer |
US11405020B2 (en) | 2020-11-26 | 2022-08-02 | Resonant Inc. | Transversely-excited film bulk acoustic resonators with structures to reduce acoustic energy leakage |
WO2022131216A1 (en) * | 2020-12-14 | 2022-06-23 | 株式会社村田製作所 | Elastic wave device |
CN112688650A (en) * | 2020-12-17 | 2021-04-20 | 广东广纳芯科技有限公司 | Lamb wave resonator, and filter and electronic device provided with same |
US11239816B1 (en) | 2021-01-15 | 2022-02-01 | Resonant Inc. | Decoupled transversely-excited film bulk acoustic resonators |
US11817829B2 (en) | 2021-01-29 | 2023-11-14 | Skyworks Solutions, Inc. | Multi-mode broadband low noise amplifier |
US20220321098A1 (en) * | 2021-03-30 | 2022-10-06 | Resonant Inc. | Diplexer using decoupled transversely-excited film bulk acoustic resonators |
US20230058875A1 (en) * | 2021-08-18 | 2023-02-23 | RF360 Europe GmbH | Wideband-enabled electroacoustic device |
FR3130102B1 (en) * | 2021-12-06 | 2024-01-12 | Commissariat Energie Atomique | Volume acoustic wave device and method for producing such a device |
WO2023224129A1 (en) * | 2022-05-19 | 2023-11-23 | 株式会社村田製作所 | Elastic wave device |
WO2024043301A1 (en) * | 2022-08-25 | 2024-02-29 | 株式会社村田製作所 | Elastic wave device |
CN116248072B (en) * | 2022-12-29 | 2024-04-02 | 上海馨欧集成微电有限公司 | Acoustic wave filter and signal processing circuit |
CN115800952A (en) * | 2023-02-07 | 2023-03-14 | 常州承芯半导体有限公司 | Filter circuit |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070267942A1 (en) * | 2006-05-19 | 2007-11-22 | Hisanori Matsumoto | Piezoelectric film resonator, radio-frequency filter using them, and radio-frequency module using them |
US20130271238A1 (en) * | 2012-04-13 | 2013-10-17 | Taiyo Yuden Co., Ltd. | Filter device, manufacturing method for filter device, and duplexer |
US9219467B2 (en) * | 2011-11-04 | 2015-12-22 | Taiyo Yuden Co., Ltd. | Duplexer, filter and communication module |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006134959A1 (en) * | 2005-06-17 | 2006-12-21 | Matsushita Electric Industrial Co., Ltd. | Multi-mode thin film elastic wave resonator filter |
JP2008035358A (en) | 2006-07-31 | 2008-02-14 | Hitachi Media Electoronics Co Ltd | Thin film piezoelectric bulk wave resonator and high frequency filter using it |
FR2922696B1 (en) | 2007-10-22 | 2010-03-12 | St Microelectronics Sa | WAVE RESONATOR OF LAMB |
JP5220503B2 (en) * | 2008-07-23 | 2013-06-26 | 太陽誘電株式会社 | Elastic wave device |
WO2010077313A1 (en) * | 2008-12-17 | 2010-07-08 | Sand9, Inc. | Mechanical resonating structures including a temperature compensation structure |
JP2010220163A (en) * | 2009-03-19 | 2010-09-30 | Seiko Epson Corp | Lamb-wave resonator and oscillator |
KR101616941B1 (en) | 2009-09-07 | 2016-04-29 | 삼성전자주식회사 | Phase shifter using bulk acoustic wave resonator |
JP5757629B2 (en) | 2010-02-04 | 2015-07-29 | 太陽誘電株式会社 | Filter, duplexer, communication module, communication device |
JPWO2012114931A1 (en) * | 2011-02-25 | 2014-07-07 | 株式会社村田製作所 | Variable capacitance element and tunable filter |
JP5723667B2 (en) * | 2011-04-27 | 2015-05-27 | 太陽誘電株式会社 | Ladder filter, duplexer and module |
FR2974691B1 (en) * | 2011-04-28 | 2019-08-30 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | ELECTRO-MECHANICAL DEVICE WITH ACOUSTIC WAVES COMPRISING A TRANSDUCTION ZONE AND AN EXTENDED CAVITY |
JP2012253497A (en) * | 2011-06-01 | 2012-12-20 | Taiyo Yuden Co Ltd | Electronic circuit and electronic module |
JP2013214954A (en) * | 2012-03-07 | 2013-10-17 | Taiyo Yuden Co Ltd | Resonator, frequency filter, duplexer, electronic device, and method for manufacturing resonator |
JP5986803B2 (en) | 2012-05-24 | 2016-09-06 | 太陽誘電株式会社 | Filter, duplexer and communication module |
JP5933355B2 (en) * | 2012-06-12 | 2016-06-08 | 太陽誘電株式会社 | Filter and duplexer |
JP6092535B2 (en) | 2012-07-04 | 2017-03-08 | 太陽誘電株式会社 | Lamb wave device and manufacturing method thereof |
US9246533B2 (en) * | 2012-10-18 | 2016-01-26 | Skyworks Panasonic Filter Solutions Japan Co., Ltd. | Electronic device including filter |
JP6170349B2 (en) | 2013-06-18 | 2017-07-26 | 太陽誘電株式会社 | Elastic wave device |
WO2015176041A1 (en) | 2014-05-15 | 2015-11-19 | The Regents Of The University Of California | Active resonator system with tunable quality factor, frequency, and impedance |
JP6603012B2 (en) * | 2014-05-21 | 2019-11-06 | 太陽誘電株式会社 | Duplexer |
US20160079958A1 (en) * | 2014-05-30 | 2016-03-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising vertically extended acoustic cavity |
US9810772B2 (en) | 2015-02-27 | 2017-11-07 | Navico Holding As | Radar signal generator |
JP6668213B2 (en) | 2015-10-01 | 2020-03-18 | スカイワークスフィルターソリューションズジャパン株式会社 | Demultiplexer and communication equipment |
JP6556093B2 (en) | 2016-05-11 | 2019-08-07 | 太陽誘電株式会社 | Filters and multiplexers |
CN106053595B (en) * | 2016-05-13 | 2019-08-27 | 中国科学院苏州生物医学工程技术研究所 | Lamb wave sensor with high quality factor |
JP6590760B2 (en) * | 2016-06-10 | 2019-10-16 | 太陽誘電株式会社 | Elastic wave device |
US10404234B2 (en) | 2016-09-02 | 2019-09-03 | Skyworks Filter Solutions Japan Co., Ltd. | Filter device with phase compensation, and electronic devices including same |
JP2018088678A (en) | 2016-11-29 | 2018-06-07 | スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. | Filters including loop circuits for phase cancellation |
SG10201901768XA (en) * | 2018-03-02 | 2019-10-30 | Skyworks Solutions Inc | Lamb Wave Loop Circuit For Acoustic Wave Filter |
-
2019
- 2019-02-27 SG SG10201901768X patent/SG10201901768XA/en unknown
- 2019-02-27 US US16/287,891 patent/US11165406B2/en active Active
- 2019-02-27 TW TW108106756A patent/TW201941464A/en unknown
- 2019-02-27 US US16/287,802 patent/US20190273480A1/en not_active Abandoned
- 2019-02-27 US US16/287,909 patent/US11177787B2/en active Active
- 2019-02-27 WO PCT/US2019/019884 patent/WO2019169025A1/en active Application Filing
- 2019-03-01 JP JP2019037216A patent/JP2019154031A/en active Pending
-
2021
- 2021-09-27 US US17/449,063 patent/US20220014169A1/en active Pending
- 2021-09-28 US US17/449,214 patent/US20220014170A1/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070267942A1 (en) * | 2006-05-19 | 2007-11-22 | Hisanori Matsumoto | Piezoelectric film resonator, radio-frequency filter using them, and radio-frequency module using them |
US9219467B2 (en) * | 2011-11-04 | 2015-12-22 | Taiyo Yuden Co., Ltd. | Duplexer, filter and communication module |
US20130271238A1 (en) * | 2012-04-13 | 2013-10-17 | Taiyo Yuden Co., Ltd. | Filter device, manufacturing method for filter device, and duplexer |
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US11165406B2 (en) | 2021-11-02 |
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