US20220011413A1 - Light sensor and ranging method - Google Patents
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- US20220011413A1 US20220011413A1 US17/367,444 US202117367444A US2022011413A1 US 20220011413 A1 US20220011413 A1 US 20220011413A1 US 202117367444 A US202117367444 A US 202117367444A US 2022011413 A1 US2022011413 A1 US 2022011413A1
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Definitions
- This disclosure relates to a sensing technology, and in particular to a light sensor and a ranging method.
- a light sensor that may be used to sense extremely low light is currently one of the main sensor designs under development.
- a ranging result of a ranging sensor is limited by a bin resolution (or also known as a counting resolution) of a digital converter 330 , and cannot provide a more precise ranging result.
- how to enable a light sensor to effectively sense extremely low light while having high precision remains a challenge for those skilled in the art.
- This disclosure provides a light sensor and a ranging method, which can provide a high-precision ranging result.
- the light sensor of the disclosure includes a light source, a sensing sub-pixel, and a control circuit.
- the sensing sub-pixel includes a diode.
- the control circuit is coupled to the light source and the sensing sub-pixel, and is configured to operate the diode in a Geiger mode or an avalanche linear mode.
- the control circuit includes a time-to-digital converter.
- the time-to-digital converter is coupled to the diode.
- the control circuit sequentially delays multiple light emission times of the light source in multiple consecutive sensing periods according to multiple delay times during the multiple consecutive sensing periods.
- the control circuit sequentially monitors whether multiple digital values sequentially outputted by the time-to-digital converter corresponding to the multiple sensing periods have changed.
- the control circuit calculates a distance value according to the multiple digital values and a corresponding delay sequence when the control circuit determined that the multiple digital values have changed for a first time.
- the light sensor and the ranging method of the disclosure may determine whether the sensing result corresponding to the multiple light emission times have changed according to the adjustment of the multiple light emission times, so as to obtain the converted result with higher precision.
- FIG. 1 is a schematic structural diagram of a light sensor according to an embodiment of the disclosure.
- FIG. 2 is a schematic diagram of a sensing array according to an embodiment of the disclosure.
- FIG. 4 is a characteristic curve diagram of a diode according to an embodiment of the disclosure.
- FIG. 5 is a flowchart of a ranging method according to an embodiment of the disclosure.
- FIG. 6 is an operation time sequence diagram of a light sensor according to an embodiment of the disclosure.
- FIG. 7 is an operation time sequence diagram of a light sensor according to another embodiment of the disclosure.
- control circuit 110 may control the sensing array 120 to operate the diodes in the sensing sub-pixels 121 _ 1 to 121 _N in a Geiger mode or an avalanche linear mode, so as to perform a light sensing operation.
- the light source 130 may be an infrared laser light source, but the disclosure is not limited thereto. In other embodiments of the disclosure, the light source 130 may be a visible light source or an invisible light source.
- the control circuit 110 may respectively operate the multiple diodes of the sensing sub-pixels 121 _ 1 to 121 _N in a single-photon avalanche diode (SPAD) state of the Geiger mode or the avalanche linear mode to sense a sensing light (pulsing light) emitted by the light source 130 , thereby realizing a ranging sensing function having a low light amount and a high sensing sensitivity characteristic.
- SPAD single-photon avalanche diode
- FIG. 3 is a schematic circuit diagram of a sensing circuit according to an embodiment of the disclosure.
- a sensing circuit 300 of the embodiment may be applicable to the control circuit and the sensing sub-pixel described in various embodiments of the disclosure.
- the sensing sub-pixel 300 includes a diode 310 and a cut-off resistor Rq.
- the control circuit includes an amplifier 320 and a time-to-digital converter 330 .
- the time-to-digital converter 330 includes a count circuit 331 .
- V OP V BD +V EB
- the cut-off resistor Rq is coupled between a second terminal of the diode 310 and a ground terminal voltage.
- V A There is a node voltage V A between the cut-off resistor Rq and the second terminal of the diode 310 .
- An input terminal of the amplifier 320 is coupled to the second terminal of the diode 310 .
- An output terminal of the amplifier 320 is coupled to the time-to-digital converter 330 .
- a control circuit (such as the control circuit 110 in FIG.
- the input terminal of the amplifier 320 may receive a sensing signal provided by the diode 310 when the diode 310 sensed a single photon or several photons (trace photons) of the ranging light.
- the sensing signal may be a single photon sensing signal.
- the output terminal of the amplifier 320 may output an amplified sensing signal V OUT to the time-to-digital converter 330 .
- the amplified sensing signal V OUT may be, for example, a square wave pulse signal.
- FIG. 4 is a characteristic curve diagram of a diode according to an embodiment of the disclosure.
- the diode of the sub-sensing pixel according to the embodiment may have a characteristic curve 401 as shown in FIG. 4 .
- a horizontal axis in FIG. 4 is a bias voltage V of the diode, and a vertical axis is a current I that the diode may generate due to photoelectric conversion under a corresponding bias voltage.
- the diode may operate in a solar cell mode when the bias voltage V of the diode is greater than 0 (a voltage range M 1 as shown in FIG. 4 ).
- the diode may operate in a photodiode mode when the bias voltage V of the diode is between 0 and the avalanche breakdown voltage V_APD (a voltage range M 2 as shown in FIG. 4 ).
- the diode may operate in the avalanche linear mode when the bias voltage V of the diode is between the avalanche breakdown voltage V_APD and a breakdown voltage V_SPAD (a voltage range M 3 as shown in FIG. 4 ).
- the diode may operate in the Geiger mode when the bias voltage V of the diode is less than the breakdown voltage V_SPAD (a voltage range M 4 as shown in FIG. 4 ).
- FIG. 5 is a flowchart of a ranging method according to an embodiment of the disclosure.
- FIG. 6 is an operation time sequence diagram of the light sensor 100 according to an embodiment of the disclosure.
- the light sensor 100 of the disclosure may execute Steps S 510 to S 540 as follows to perform ranging.
- the control circuit 110 may operate the diode 310 in the Geiger mode or the avalanche linear mode.
- the control circuit 110 may sequentially delay multiple light emission times of the light source 130 in multiple consecutive sensing periods according to multiple delay times during the multiple consecutive sensing periods.
- the control circuit 110 may sequentially monitors whether multiple digital values sequentially outputted by the time-to-digital converter corresponding to the multiple sensing periods have changed.
- the control circuit 110 may calculate a distance value according to the multiple digital values and a corresponding delay sequence.
- the control circuit 110 may sequentially delay the multiple light emission times of the light source 130 in the consecutive sensing periods according to delay times Td 1 to Td 10 during ten consecutive sensing periods.
- the control circuit 110 may operate the time-to-digital converter 330 to respectively start performing a count operation after a delay time length TA in each of the light emission times.
- TA is a delay time of the circuit, and it may also be zero.
- preset light emission times of the light source 130 have an interval of equal time length.
- an adjusted light emission time sequence LP′ shown in FIG.
- the preset light emission times of the light source 130 are respectively adjusted according to the delay times Td 1 to Td 10 , so that the light source 130 delays the emission.
- the delay times Td 1 to Td 10 may be determined according to a (minimum) bin resolution (a sub-bin resolution or a sub-counting resolution) Tb of the time-to-digital converter 330 .
- the delay time Td 1 may be, for example, 1 ⁇ Tb.
- the delay time Td 2 may be, for example, 0.9 ⁇ Tb.
- the delay time Td 3 may be, for example, 0.8 ⁇ Tb.
- the delay time Td 4 may be, for example, 0.7 ⁇ Tb.
- the delay time Td 5 may be, for example, 0.6 ⁇ Tb.
- the delay time Td 6 may be, for example, 0.5 ⁇ Tb.
- the delay time Td 7 may be, for example, 0.4 ⁇ Tb.
- the delay time Td 8 may be, for example, 0.3 ⁇ Tb.
- the delay time Td 9 may be, for example, 0.2 ⁇ Tb.
- the delay time Td 10 may be, for example, 0.1 ⁇ Tb.
- the delay times Td 1 to Td 10 are less than the (minimum) bin resolution (counting resolution) Tb of the digital converter 330 , therefore the disclosure may realize accuracy and precision of the sub-bin resolution.
- the diode 310 may receive, for example, a reflected light of the sensing light emitted by the light source 130 and reflected from a sensing target surface during the first to the sixth sensing periods. Therefore, the time-to-digital converter 330 may output the multiple digital values corresponding to a first to a sixth distance sensing results according to count results of the first to the sixth sensing periods.
- the first to the sixth distance sensing results may all be, for example, 91 milliseconds (ms).
- the time-to-digital converter 330 may output the multiple digital values corresponding to a seventh to a tenth distance sensing results according to multiple count results of the seventh to the tenth sensing periods.
- the seventh to the tenth distance sensing results may be, for example, 90 milliseconds (ms).
- the control circuit 110 may rely on, for example, the digital value and the delay sequence (the delay sequence of a seventh sensing period is 7, and a difference between the delay in the seventh sensing period and the delay in the first sensing period is (7 ⁇ 1) ⁇ 0.1 ms) corresponding to 91 milliseconds to calculate the distance value when the control circuit 110 monitors that the multiple digital values obtained above have changed for a first time during the seventh sensing period.
- the control circuit 110 may obtain a sensing result that is 10 times of the (minimum) bin resolution of the time-to-digital converter 330 .
- the disclosure may realize the accuracy and precision of the sub-bin resolution.
- the sensing periods and the number of delays in the disclosure are not limited to the above-mentioned examples.
- the sensing periods of the disclosure and the number of delays of the light source 130 may be determined according to a multiplication of an expected to be obtained (minimum) bin resolution of the digital converter 330 . For example, if the expected bin resolution is 100 times, the sensing periods and the number of delays may be 100 times respectively, so that the distance sensing result calculated by the control circuit 110 may be, for example, 91.65.
- the light sensor 100 of the embodiment may provide a high-precision ranging result.
- a storage space of the circuit is proportional to the resolution of the ranging.
- the resolution is to be increased by 10 times
- the storage space of the circuit has to be increased by 10 times.
- the disclosure may increase the resolution by, for example, 10 times or 100 times without increasing the circuit storage space.
- the control circuit 110 of the embodiment only has to monitor whether the digital values outputted by the digital converter 330 change from time to time, and calculate the distance value immediately when the digital values have changed. In other words, since the control circuit 110 of the embodiment does not have to record the sensing results of each of the sensing periods, the light sensor 100 of the embodiment further obtains the high-precision ranging result in a storage space saving means.
- FIG. 7 is an operation time sequence diagram of a light sensor according to another embodiment of the disclosure.
- the multiple diodes of the sensing sub-pixels 121 _ 1 to 121 _N respectively serve as the single-photon avalanche diodes (operating in the Geiger mode or the avalanche linear mode)
- the sensing sub-pixels 121 _ 1 to 121 _N have to respectively re-bias the multiple diodes, causing there to be a period of time (may be known as dead time) when the photons are unable to be sensed.
- the control circuit 110 of the embodiment may, for example, set some of the sensing sub-pixels of the sensing sub-pixels 121 _ 1 to 121 _N of the embodiment as a sensing pixel (or macro-pixel).
- the four sensing sub-pixels 121 _A to 121 _D may serve as a sensing pixel 122 , where A to D are positive integers, and less than or equal to N.
- the control circuit 110 may determine whether the sensing sub-pixels 121 _A to 121 _D respectively sense one or more photons in a corresponding same exposure time interval and concurrently generate multiple sensing currents, to serve as a pixel sensing result. For example, the control circuit 110 may perform a calculation on the distance sensing result (a time difference or a distance value) of the sensing sub-pixels 121 _A to 121 _D, to serve as the pixel sensing result.
- the control circuit 110 may sequentially expose the sensing sub-pixels 121 _A to 121 _D belonging to the same pixel in a frame sensing period (that is, corresponding to the sensing period in the above-mentioned embodiment). That is, each of the sensing periods in the above-mentioned embodiment may further include t 0 to t 6 . Emission time sequences PH 1 to PH 4 of the sensing light are shown in FIG.
- Exposure operation time sequences EP 1 to EP 4 are shown in FIG. 7 , in which when the sensing sub-pixel 121 _ 1 receives the sensing light signal P 1 at the time t 1 in an exposure period T 1 , the sensing sub-pixel 121 _ 1 may only proceed to perform the next exposure operation after a delay time Td.
- the sensing sub-pixels 121 _ 1 to 121 _ 4 may only receive the sensing light signal P 1 , and the sensing light signals P 2 to P 4 would not be sensed due to the sensing sub-pixels 121 _ 1 to 121 _ 4 being in the dead time.
- the light sensor and the ranging method of the disclosure may delay the multiple light emission times of the light source according to the delay times that are gradually changing, and calculate the ranging results with higher precision according to the sensing results of the light sensor corresponding to the multiple light emission times.
- the light sensor and the ranging method of the disclosure may also effectively reduce the impact of the dead time of the sensing sub-pixels and provide accurate sensing results.
Abstract
A light sensor and a ranging method are provided. The light sensor includes a light source, a sensing sub-pixel, and a control circuit. The sensing sub-pixel includes a diode. The control circuit operates the diode in a Geiger mode or an avalanche linear mode. The control circuit includes a time-to-digital converter. The control circuit sequentially delays multiple light emission times of the light source in consecutive multiple sensing periods according to delay times during the consecutive multiple sensing periods. The control circuit sequentially monitors whether multiple digital values sequentially outputted by the time-to-digital converter corresponding to the consecutive multiple sensing periods have changed. The control circuit calculates a distance value according to the multiple digital values and a corresponding delay sequence when the control circuit determined that the multiple digital values have changed for a first time.
Description
- This application claims the priority benefit of U.S. provisional application Ser. No. 63/050,120, filed on Jul. 10, 2020, and U.S. provisional application Ser. No. 63/058,502, filed on Jul. 30, 2020. The entirety of each of the above-mentioned patent applications is hereby incorporated by reference herein and made a part of this specification.
- This disclosure relates to a sensing technology, and in particular to a light sensor and a ranging method.
- Currently, there is a high demand for high-sensitivity ranging sensors in various application fields, such as the medical field or the automotive field. In particular, a light sensor that may be used to sense extremely low light is currently one of the main sensor designs under development. However, a ranging result of a ranging sensor is limited by a bin resolution (or also known as a counting resolution) of a
digital converter 330, and cannot provide a more precise ranging result. In view of this, how to enable a light sensor to effectively sense extremely low light while having high precision remains a challenge for those skilled in the art. - This disclosure provides a light sensor and a ranging method, which can provide a high-precision ranging result.
- The light sensor of the disclosure includes a light source, a sensing sub-pixel, and a control circuit. The sensing sub-pixel includes a diode. The control circuit is coupled to the light source and the sensing sub-pixel, and is configured to operate the diode in a Geiger mode or an avalanche linear mode. The control circuit includes a time-to-digital converter. The time-to-digital converter is coupled to the diode. The control circuit sequentially delays multiple light emission times of the light source in multiple consecutive sensing periods according to multiple delay times during the multiple consecutive sensing periods. The control circuit sequentially monitors whether multiple digital values sequentially outputted by the time-to-digital converter corresponding to the multiple sensing periods have changed. The control circuit calculates a distance value according to the multiple digital values and a corresponding delay sequence when the control circuit determined that the multiple digital values have changed for a first time.
- The ranging method of the disclosure is applicable to a light sensor. The light sensor includes a light source, a sensing sub-pixel, and a control circuit. The sensing sub-pixel includes a diode. The control circuit includes a time-to-digital converter. The ranging method includes the following steps. The diode is operated in a Geiger mode or an avalanche linear mode through the control circuit. Multiple light emission times of the light source in multiple consecutive sensing periods are sequentially delayed through the control circuit according to multiple delay times during the multiple consecutive sensing periods. Whether multiple digital values sequentially outputted by the time-to-digital converter corresponding to the multiple sensing periods have changed is sequentially monitored through the control circuit. And, the control circuit calculates a distance value according to the multiple digital values and a corresponding delay sequence when the control circuit determined that the multiple digital values have changed for a first time.
- Based on the above, the light sensor and the ranging method of the disclosure may determine whether the sensing result corresponding to the multiple light emission times have changed according to the adjustment of the multiple light emission times, so as to obtain the converted result with higher precision.
- To make the above features and advantages more comprehensible, several embodiments accompanied by drawings are described in detail as follows.
-
FIG. 1 is a schematic structural diagram of a light sensor according to an embodiment of the disclosure. -
FIG. 2 is a schematic diagram of a sensing array according to an embodiment of the disclosure. -
FIG. 3 is a schematic circuit diagram of a sensing circuit according to an embodiment of the disclosure. -
FIG. 4 is a characteristic curve diagram of a diode according to an embodiment of the disclosure. -
FIG. 5 is a flowchart of a ranging method according to an embodiment of the disclosure. -
FIG. 6 is an operation time sequence diagram of a light sensor according to an embodiment of the disclosure. -
FIG. 7 is an operation time sequence diagram of a light sensor according to another embodiment of the disclosure. - In order to make the content of the disclosure more comprehensible, the following embodiments are specifically cited as examples as to how the disclosure may be implemented. In addition, wherever possible, elements/components/steps with the same reference numerals in the drawings and the embodiments represent the same or similar components.
-
FIG. 1 is a schematic structural diagram of a light sensor according to an embodiment of the disclosure.FIG. 2 is a schematic diagram of a sensing array according to an embodiment of the disclosure. With reference toFIGS. 1 and 2 , alight sensor 100 includes acontrol circuit 110, asensing array 120, and alight source 130. Thecontrol circuit 110 is coupled to thesensing array 120 and thelight source 130. Thesensing array 120 includes multiple sensing sub-pixels 121_1 to 121_N, where N is a positive integer. Each of the sensing sub-pixels 121_1 to 121_N includes at least one diode (photodiode). The diode may be a pn junction diode. In the embodiment, thecontrol circuit 110 may control thesensing array 120 to operate the diodes in the sensing sub-pixels 121_1 to 121_N in a Geiger mode or an avalanche linear mode, so as to perform a light sensing operation. - In the embodiment, the
light source 130 may be an infrared laser light source, but the disclosure is not limited thereto. In other embodiments of the disclosure, thelight source 130 may be a visible light source or an invisible light source. In the embodiment, thecontrol circuit 110 may respectively operate the multiple diodes of the sensing sub-pixels 121_1 to 121_N in a single-photon avalanche diode (SPAD) state of the Geiger mode or the avalanche linear mode to sense a sensing light (pulsing light) emitted by thelight source 130, thereby realizing a ranging sensing function having a low light amount and a high sensing sensitivity characteristic. - In the embodiment, the
control circuit 110 may be, for example, an internal circuit or a chip of a light sensor, and includes digital circuit elements and/or analog circuit elements. Thecontrol circuit 110 may control an operation mode of the diodes in the sensing sub-pixels 121_1 to 121_N and/or an operation mode of the sensing sub-pixels 121_1 to 121_N through changing a bias voltage of the diodes in the sensing sub-pixels 121_1 to 121_N and/or a control voltage of multiple transistors. Thecontrol circuit 110 may control thelight source 130 to emit the sensing light, and may perform related signal processing and sensing data calculations on a sensing signal outputted by the sensing sub-pixels 121_1 to 121_N. In other embodiments of the disclosure, thecontrol circuit 110 may also be, for example, an external circuit or a chip of a light sensor, for example, a processing circuit or a control circuit in a certain terminal device such as a central processing unit (CPU), a microprocessor control unit (MCU), or a field programmable gate array (FPGA), but the disclosure is not limited thereto. -
FIG. 3 is a schematic circuit diagram of a sensing circuit according to an embodiment of the disclosure. With reference toFIG. 3 , asensing circuit 300 of the embodiment may be applicable to the control circuit and the sensing sub-pixel described in various embodiments of the disclosure. In the embodiment, thesensing sub-pixel 300 includes adiode 310 and a cut-off resistor Rq. The control circuit includes anamplifier 320 and a time-to-digital converter 330. The time-to-digital converter 330 includes a count circuit 331. In the embodiment, a first terminal of thediode 310 is coupled to a working voltage VOP (VOP=VBD+VEB), where VBD is a breakdown voltage, and VEB is an excess bias voltage. The cut-off resistor Rq is coupled between a second terminal of thediode 310 and a ground terminal voltage. There is a node voltage VA between the cut-off resistor Rq and the second terminal of thediode 310. An input terminal of theamplifier 320 is coupled to the second terminal of thediode 310. An output terminal of theamplifier 320 is coupled to the time-to-digital converter 330. In the embodiment, a control circuit (such as thecontrol circuit 110 inFIG. 1 ) may control a bias voltage of thediode 310, to enable thediode 310 to operate in the Geiger mode or the avalanche linear mode to receive a ranging light emitted by a specific light source (such as thelight source 130 inFIG. 1 ). In this regard, the input terminal of theamplifier 320 may receive a sensing signal provided by thediode 310 when thediode 310 sensed a single photon or several photons (trace photons) of the ranging light. The sensing signal may be a single photon sensing signal. In addition, the output terminal of theamplifier 320 may output an amplified sensing signal VOUT to the time-to-digital converter 330. The amplified sensing signal VOUT may be, for example, a square wave pulse signal. -
FIG. 4 is a characteristic curve diagram of a diode according to an embodiment of the disclosure. With reference toFIGS. 1, 2 and 4 , the diode of the sub-sensing pixel according to the embodiment may have acharacteristic curve 401 as shown inFIG. 4 . A horizontal axis inFIG. 4 is a bias voltage V of the diode, and a vertical axis is a current I that the diode may generate due to photoelectric conversion under a corresponding bias voltage. The diode may operate in a solar cell mode when the bias voltage V of the diode is greater than 0 (a voltage range M1 as shown inFIG. 4 ). The diode may operate in a photodiode mode when the bias voltage V of the diode is between 0 and the avalanche breakdown voltage V_APD (a voltage range M2 as shown inFIG. 4 ). The diode may operate in the avalanche linear mode when the bias voltage V of the diode is between the avalanche breakdown voltage V_APD and a breakdown voltage V_SPAD (a voltage range M3 as shown inFIG. 4 ). The diode may operate in the Geiger mode when the bias voltage V of the diode is less than the breakdown voltage V_SPAD (a voltage range M4 as shown inFIG. 4 ). In the embodiment, thecontrol circuit 110 controls the bias voltages of the multiple diodes of the sensing sub-pixel 121_1 to 121_N, so that the multiple diodes operate in the Geiger mode or the avalanche linear mode to receive the sensing light emitted by thelight source 130. -
FIG. 5 is a flowchart of a ranging method according to an embodiment of the disclosure.FIG. 6 is an operation time sequence diagram of thelight sensor 100 according to an embodiment of the disclosure. With reference toFIGS. 1, 3, and 5 , thelight sensor 100 of the disclosure may execute Steps S510 to S540 as follows to perform ranging. In the Step S510, thecontrol circuit 110 may operate thediode 310 in the Geiger mode or the avalanche linear mode. In the Step S520, thecontrol circuit 110 may sequentially delay multiple light emission times of thelight source 130 in multiple consecutive sensing periods according to multiple delay times during the multiple consecutive sensing periods. In the Step S530, thecontrol circuit 110 may sequentially monitors whether multiple digital values sequentially outputted by the time-to-digital converter corresponding to the multiple sensing periods have changed. When thecontrol circuit 110 determines that the multiple digital values have changed for a first time, in the Step S540, thecontrol circuit 110 may calculate a distance value according to the multiple digital values and a corresponding delay sequence. - For example, with reference to
FIG. 6 , thecontrol circuit 110 may sequentially delay the multiple light emission times of thelight source 130 in the consecutive sensing periods according to delay times Td1 to Td10 during ten consecutive sensing periods. As shown in a count time sequence EP shown inFIG. 6 , thecontrol circuit 110 may operate the time-to-digital converter 330 to respectively start performing a count operation after a delay time length TA in each of the light emission times. TA is a delay time of the circuit, and it may also be zero. As shown inFIG. 6 in a preset light emission time sequence LP, preset light emission times of thelight source 130 have an interval of equal time length. In this regard, as shown in an adjusted light emission time sequence LP′ shown inFIG. 6 , the preset light emission times of thelight source 130 are respectively adjusted according to the delay times Td1 to Td10, so that thelight source 130 delays the emission. It should be noted that the delay times Td1 to Td10 may be determined according to a (minimum) bin resolution (a sub-bin resolution or a sub-counting resolution) Tb of the time-to-digital converter 330. In this example, the delay time Td1 may be, for example, 1×Tb. The delay time Td2 may be, for example, 0.9×Tb. The delay time Td3 may be, for example, 0.8×Tb. The delay time Td4 may be, for example, 0.7×Tb. The delay time Td5 may be, for example, 0.6×Tb. The delay time Td6 may be, for example, 0.5×Tb. The delay time Td7 may be, for example, 0.4×Tb. The delay time Td8 may be, for example, 0.3×Tb. The delay time Td9 may be, for example, 0.2×Tb. The delay time Td10 may be, for example, 0.1×Tb. The delay times Td1 to Td10 are less than the (minimum) bin resolution (counting resolution) Tb of thedigital converter 330, therefore the disclosure may realize accuracy and precision of the sub-bin resolution. - In the example, the
diode 310 may receive, for example, a reflected light of the sensing light emitted by thelight source 130 and reflected from a sensing target surface during the first to the sixth sensing periods. Therefore, the time-to-digital converter 330 may output the multiple digital values corresponding to a first to a sixth distance sensing results according to count results of the first to the sixth sensing periods. The first to the sixth distance sensing results may all be, for example, 91 milliseconds (ms). In addition, since thediode 310 receives other multiple reflected lights of other multiple sensing lights emitted by thelight source 130 and reflected from the sensing target surface during the seventh to the tenth sensing periods, the time-to-digital converter 330 may output the multiple digital values corresponding to a seventh to a tenth distance sensing results according to multiple count results of the seventh to the tenth sensing periods. The seventh to the tenth distance sensing results may be, for example, 90 milliseconds (ms). Therefore, thecontrol circuit 110 may rely on, for example, the digital value and the delay sequence (the delay sequence of a seventh sensing period is 7, and a difference between the delay in the seventh sensing period and the delay in the first sensing period is (7−1)×0.1 ms) corresponding to 91 milliseconds to calculate the distance value when thecontrol circuit 110 monitors that the multiple digital values obtained above have changed for a first time during the seventh sensing period. Taking time calculation as an example (actually it may be calculated using the digital value), thecontrol circuit 110 may, for example, calculate a distance sensing result D according to a formula: D−6×0.1=91. Therefore, thecontrol circuit 110 may calculate the distance sensing result D=91+6×0.1=91.6 ms, where 0.1 (0.1=1/10) is a reciprocal of total number of delays. - In this way, the
control circuit 110 may obtain a sensing result that is 10 times of the (minimum) bin resolution of the time-to-digital converter 330. In other words, the disclosure may realize the accuracy and precision of the sub-bin resolution. However, the sensing periods and the number of delays in the disclosure are not limited to the above-mentioned examples. The sensing periods of the disclosure and the number of delays of thelight source 130 may be determined according to a multiplication of an expected to be obtained (minimum) bin resolution of thedigital converter 330. For example, if the expected bin resolution is 100 times, the sensing periods and the number of delays may be 100 times respectively, so that the distance sensing result calculated by thecontrol circuit 110 may be, for example, 91.65. Therefore, thelight sensor 100 of the embodiment may provide a high-precision ranging result. For a general ranging circuit, a storage space of the circuit is proportional to the resolution of the ranging. When the resolution is to be increased by 10 times, the storage space of the circuit has to be increased by 10 times. However, the disclosure may increase the resolution by, for example, 10 times or 100 times without increasing the circuit storage space. From another perspective, thecontrol circuit 110 of the embodiment only has to monitor whether the digital values outputted by thedigital converter 330 change from time to time, and calculate the distance value immediately when the digital values have changed. In other words, since thecontrol circuit 110 of the embodiment does not have to record the sensing results of each of the sensing periods, thelight sensor 100 of the embodiment further obtains the high-precision ranging result in a storage space saving means. -
FIG. 7 is an operation time sequence diagram of a light sensor according to another embodiment of the disclosure. With reference toFIGS. 1, 2, and 7 , it should be noted that since the multiple diodes of the sensing sub-pixels 121_1 to 121_N respectively serve as the single-photon avalanche diodes (operating in the Geiger mode or the avalanche linear mode), when the multiple diodes respectively sense the photons and an avalanche event occurs, the sensing sub-pixels 121_1 to 121_N have to respectively re-bias the multiple diodes, causing there to be a period of time (may be known as dead time) when the photons are unable to be sensed. In this regard, in order to reduce impact of the dead time, thecontrol circuit 110 of the embodiment may, for example, set some of the sensing sub-pixels of the sensing sub-pixels 121_1 to 121_N of the embodiment as a sensing pixel (or macro-pixel). For example, with reference toFIG. 1 , the four sensing sub-pixels 121_A to 121_D may serve as asensing pixel 122, where A to D are positive integers, and less than or equal to N. Thecontrol circuit 110 may determine whether the sensing sub-pixels 121_A to 121_D respectively sense one or more photons in a corresponding same exposure time interval and concurrently generate multiple sensing currents, to serve as a pixel sensing result. For example, thecontrol circuit 110 may perform a calculation on the distance sensing result (a time difference or a distance value) of the sensing sub-pixels 121_A to 121_D, to serve as the pixel sensing result. - Specifically, when the four diodes of the sensing sub-pixels 121_A to 121_D are operating in the Geiger mode or the avalanche linear mode, the
control circuit 110 may sequentially expose the sensing sub-pixels 121_A to 121_D belonging to the same pixel in a frame sensing period (that is, corresponding to the sensing period in the above-mentioned embodiment). That is, each of the sensing periods in the above-mentioned embodiment may further include t0 to t6. Emission time sequences PH1 to PH4 of the sensing light are shown inFIG. 7 , in which during the period from the time t0 to the time t6, for example, there are four sensing light signals (photons) P1 to P4 being emitted to thesensing pixel 122. Exposure operation time sequences EP1 to EP4 are shown inFIG. 7 , in which when the sensing sub-pixel 121_1 receives the sensing light signal P1 at the time t1 in an exposure period T1, the sensing sub-pixel 121_1 may only proceed to perform the next exposure operation after a delay time Td. - In this regard, if exposure periods T2 to T4 of the sensing sub-pixels 121_2 to 121_4 are the same as the exposure period T1, then the sensing sub-pixels 121_1 to 121_4 may only receive the sensing light signal P1, and the sensing light signals P2 to P4 would not be sensed due to the sensing sub-pixels 121_1 to 121_4 being in the dead time.
- Therefore, in the embodiment, an exposure starting time of the exposure periods T2 to T4 of the sensing sub-pixels 121_2 to 1214 may be respectively sequentially delayed to the times t1 to t3, and two sequentially adjacent exposure periods of the exposure periods T1 to may partially overlap. In this way, the sensing sub-pixel 121_2 may receive the sensing light signal P2 between the time t1 and the time t2 in the exposure period T2. The sensing sub-pixel 121_3 may receive the sensing light signal P3 between the time t3 and the time t4 in the exposure period T3. The sensing sub-pixel 121_4 may receive the sensing light signal P4 between the time t5 and the time t6 in the exposure period T4. Therefore, the sensing sub-pixel 121_2 to 121_4 may effectively receive all of the sensing light signals P1 to P4 and provide accurate sensing results.
- In summary, the light sensor and the ranging method of the disclosure may delay the multiple light emission times of the light source according to the delay times that are gradually changing, and calculate the ranging results with higher precision according to the sensing results of the light sensor corresponding to the multiple light emission times. In addition, the light sensor and the ranging method of the disclosure may also effectively reduce the impact of the dead time of the sensing sub-pixels and provide accurate sensing results.
- Although the disclosure has been described with reference to the above-mentioned embodiments, they are not intended to limit the disclosure. It is apparent that any one of ordinary skill in the art may make changes and modifications to the described embodiments without departing from the spirit and the scope of the disclosure. Accordingly, the scope of the disclosure is defined by the claims appended hereto and their equivalents in which all terms are meant in their broadest reasonable sense unless otherwise indicated.
Claims (12)
1. Alight sensor, comprising:
a light source;
a sensing sub-pixel, comprising a diode; and
a control circuit, coupled to the light source and the sensing sub-pixel, and configured to operate the diode in a Geiger mode or an avalanche linear mode,
wherein the control circuit comprises a time-to-digital converter, and the time-to-digital converter is coupled to the diode,
wherein the control circuit sequentially delays a plurality of light emission times of the light source in a plurality of consecutive sensing periods according to a plurality of delay times during the plurality of consecutive sensing periods, wherein the control circuit sequentially monitors whether a plurality of digital values sequentially outputted by the time-to-digital converter corresponding to the plurality of sensing periods have changed,
wherein the control circuit calculates a distance value according to the plurality of digital values and a corresponding delay sequence when the control circuit determined that the plurality of digital values have changed for a first time.
2. The light sensor according to claim 1 , wherein the plurality of delay times are sequentially decreased or increased at an equal time interval.
3. The light sensor according to claim 1 , wherein there is a delay time with a longest time length among the plurality of delay times, and a time length of the delay time with the longest time length is equal to a time length of one count bit of the time-to-digital converter.
4. The light sensor according to claim 1 , wherein a time length difference between any two adjacent delay times among the plurality of delay times is less than a time length of one count bit of the time-to-digital converter.
5. The light sensor according to claim 1 , further comprising at least another sensing sub-pixel, wherein the at least another sensing sub-pixel and the sensing sub-pixel belong to a same pixel, and the sensing sub-pixel and the at least another sensing sub-pixel are sequentially exposed in each of the plurality of sensing periods.
6. The light sensor according to claim 5 , wherein a plurality of exposure periods of the sensing sub-pixel and the at least another sensing sub-pixel in the each of the plurality of sensing periods are partially overlapped.
7. A ranging method, suitable for a light sensor, the light sensor comprising a light source, a sensing sub-pixel, and a control circuit, wherein the sensing sub-pixel comprises a diode, and the control circuit comprises a time-to-digital converter, the ranging method comprising:
operating the diode through the control circuit in a Geiger mode or an avalanche linear mode;
sequentially delaying a plurality of light emission times of the light source in a plurality of consecutive sensing periods through the control circuit according to a plurality of delay times during the plurality of consecutive sensing periods;
sequentially monitoring whether a plurality of digital values sequentially outputted by the time-to-digital converter corresponding to the plurality of sensing periods have changed through the control circuit; and
calculating a distance value according to the plurality of digital values and a corresponding delay sequence through the control circuit when the control circuit determined that the plurality of digital values have changed for a first time.
8. The ranging method according to claim 7 , wherein the plurality of delay times are sequentially decreased or increased at an equal time interval.
9. The ranging method according to claim 7 , wherein there is a delay time with a longest time length among the plurality of delay times, and a time length of the delay time with the longest time length is equal to a time length of one count bit of the time-to-digital converter.
10. The ranging method according to claim 7 , wherein a time length difference between any two adjacent delay times among the plurality of delay times is less than a time length of one count bit of the time-to-digital converter.
11. The ranging method according to claim 7 , further comprising at least another sensing sub-pixel, wherein the at least another sensing sub-pixel and the sensing sub-pixel belong to a same pixel, and the sensing sub-pixel and the at least another sensing sub-pixel are sequentially exposed in each of the plurality of sensing periods.
12. The ranging method according to claim 11 , wherein a plurality of exposure periods of the sensing sub-pixel and the at least another sensing sub-pixel in the each of the plurality of sensing periods are partially overlapped.
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Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010073136A2 (en) * | 2008-12-22 | 2010-07-01 | Koninklijke Philips Electronics N.V. | High dynamic range light sensor |
DE102009029376A1 (en) * | 2009-09-11 | 2011-05-12 | Robert Bosch Gmbh | Photon detector with paralyzable photon-sensitive element, in particular SPAD, as well as distance measuring device with such a photon detector |
TWI448871B (en) * | 2010-01-27 | 2014-08-11 | Intersil Inc | Direct current (dc) correction circuit for a time of flight (tof) photodiode front end |
US8760631B2 (en) * | 2010-01-27 | 2014-06-24 | Intersil Americas Inc. | Distance sensing by IQ domain differentiation of time of flight (TOF) measurements |
FR2970339B1 (en) * | 2011-01-10 | 2013-02-08 | Commissariat Energie Atomique | NUCLEAR MATERIAL DETECTION PROCESS BY NEUTRONIC INTERROGATION AND ASSOCIATED DETECTION SYSTEM |
US9086389B2 (en) * | 2012-10-26 | 2015-07-21 | Kla-Tencor Corporation | Sample inspection system detector |
EP3164683B1 (en) * | 2014-07-02 | 2023-02-22 | The John Hopkins University | Photodetection circuit |
US9711488B2 (en) * | 2015-03-13 | 2017-07-18 | Mediatek Inc. | Semiconductor package assembly |
US9632186B2 (en) * | 2015-05-28 | 2017-04-25 | General Electric Company | Systems and methods for sub-pixel location determination |
WO2017032548A1 (en) * | 2015-08-27 | 2017-03-02 | Koninklijke Philips N.V. | Photon counting device and method |
GB2542811A (en) * | 2015-09-30 | 2017-04-05 | Stmicroelectronics (Research & Development) Ltd | Sensing apparatus having a light sensitive detector |
US9997551B2 (en) * | 2015-12-20 | 2018-06-12 | Apple Inc. | Spad array with pixel-level bias control |
US9866816B2 (en) * | 2016-03-03 | 2018-01-09 | 4D Intellectual Properties, Llc | Methods and apparatus for an active pulsed 4D camera for image acquisition and analysis |
US11561084B2 (en) * | 2017-04-19 | 2023-01-24 | Arizona Board Of Regents On Behalf Of The University Of Arizona | Polarization sensitive devices, methods and applications |
JP6796777B2 (en) * | 2017-05-25 | 2020-12-09 | パナソニックIpマネジメント株式会社 | Solid-state image sensor and image sensor |
EP3460508A1 (en) * | 2017-09-22 | 2019-03-27 | ams AG | Semiconductor body and method for a time-of-flight measurement |
RU177777U1 (en) * | 2017-10-10 | 2018-03-12 | Федеральное государственное бюджетное научное учреждение "Федеральный исследовательский центр "Красноярский научный центр Сибирского отделения Российской академии наук" | THERMOSTATED TABLET LUMINOMETER WITH AUTOMATIC METER FOR HIGH PERFORMANCE BIOTESTING |
JP7043218B2 (en) * | 2017-10-26 | 2022-03-29 | シャープ株式会社 | Optical sensors, distance measuring devices, and electronic devices |
CN108075828A (en) * | 2017-12-16 | 2018-05-25 | 国网湖北省电力有限公司信息通信公司 | A kind of OTDR devices based on multi-channel optical fibre optical monitoring signal |
US20190239753A1 (en) * | 2018-02-06 | 2019-08-08 | Kendall Research Systems, LLC | Interleaved photon detection array for optically measuring a physical sample |
WO2019191735A1 (en) * | 2018-03-30 | 2019-10-03 | Kendall Research Systems, LLC | An interleaved photon detection array for optically measuring a physical sample |
US11199444B2 (en) * | 2018-07-11 | 2021-12-14 | Taiwan Semiconductor Manufacturing Company Limited | Time-to-digital converter circuit and method for single-photon avalanche diode based depth sensing |
TWI828695B (en) * | 2018-07-27 | 2024-01-11 | 日商索尼半導體解決方案公司 | Light receiving device and distance measuring device |
JP2020048019A (en) * | 2018-09-18 | 2020-03-26 | ソニーセミコンダクタソリューションズ株式会社 | Photo detector and ranging system |
EP3647814B1 (en) * | 2018-10-31 | 2023-12-27 | Integrated Device Technology, Inc. | Light detection and ranging system and method for operating a light detection and ranging system |
TWI696842B (en) * | 2018-11-16 | 2020-06-21 | 精準基因生物科技股份有限公司 | Time of flight ranging sensor and time of flight ranging method |
US11486984B2 (en) * | 2018-12-26 | 2022-11-01 | Beijing Voyager Technology Co., Ltd. | Three-dimensional light detection and ranging system using hybrid TDC and ADC receiver |
US11644549B2 (en) * | 2019-03-06 | 2023-05-09 | The University Court Of The University Of Edinburgh | Extended dynamic range and reduced power imaging for LIDAR detector arrays |
US11644547B2 (en) * | 2019-06-27 | 2023-05-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Time-of-light sensing device and method thereof |
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