US20210217964A1 - Organic light-emitting device - Google Patents

Organic light-emitting device Download PDF

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US20210217964A1
US20210217964A1 US17/142,900 US202117142900A US2021217964A1 US 20210217964 A1 US20210217964 A1 US 20210217964A1 US 202117142900 A US202117142900 A US 202117142900A US 2021217964 A1 US2021217964 A1 US 2021217964A1
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substituted
charge generating
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Hyeongpil Kim
Wonjong KIM
Hyoyeon KIM
Yeongrong Park
Dongkyu SEO
Junyong SHIN
Junghee An
Byeongwook Yoo
Daeho Lee
Byungseok LEE
Jaejin LYU
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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Assigned to SAMSUNG DISPLAY CO., LTD. reassignment SAMSUNG DISPLAY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: An, Junghee, Kim, Hyeongpil, KIM, HYOYEON, KIM, WONJONG, LEE, BYUNGSEOK, LEE, DAEHO, LYU, JAEJIN, PARK, YEONGRONG, SEO, DONGKYU, SHIN, Junyong, YOO, BYEONGWOOK
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    • H10K50/14—Carrier transporting layers
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    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
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Definitions

  • One or more aspects of embodiments of the present disclosure relate to an organic light-emitting device.
  • Organic light-emitting devices are self emissive devices that produce full-color images, and also have wide viewing angles, high contrast ratios, and short response times, as well as excellent characteristics in terms of luminance, driving voltage, and/or response speed.
  • the organic light-emitting device may include a first electrode on a substrate, and a hole transport region, an emission layer, an electron transport region, and a second electrode, which are sequentially positioned on the first electrode. Holes provided from the first electrode may move toward the emission layer through the hole transport region, and electrons provided from the second electrode may move toward the emission layer through the electron transport region. Carriers, such as holes and electrons, recombine in the emission layer to produce excitons. These excitons transition from an excited state to a ground state, thereby generating light.
  • One or more aspects of embodiments of the present disclosure are directed toward an organic light-emitting device having a low driving voltage, high efficiency, and long lifespan.
  • an organic light-emitting device including a first electrode,
  • each of the m ⁇ 1 charge generating layers including an n-type charge generating layer and a p-type charge generating layer
  • n is an integer of 2 or more
  • At least one of the m ⁇ 1 n-type charge generating layers and the m ⁇ 1 p-type charge generating layers includes a first inorganic material selected from a late transition metal, a metalloid, a compound including two or more late transition metals, a compound including two or more metalloids, a compound including a late transition metal and a metalloid, and combinations thereof,
  • the late transition metal is at least one selected from aluminum (Al), gallium (Ga), indium (In), thallium (Tl), tin (Sn), lead (Pb), flerovium (Fl), bismuth (Bi), and polonium (Po),
  • the metalloid is at least one selected from boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te), and astatine (At), and
  • the first inorganic material is the compound including a late transition metal and a metalloid.
  • a flat-display apparatus including a thin-film transistor including a source electrode, a drain electrode, and an activation layer; and the organic light-emitting device, wherein the first electrode of the organic light-emitting device is electrically coupled with one selected from the source electrode and the drain electrode of the thin-film transistor.
  • FIGS. 1-4 are schematic cross-sectional views of organic light-emitting devices according to one or more embodiments of the present disclosure
  • FIG. 5 is a graph of measurement of current density (mA/cm 2 ) according to driving voltage (V) of organic light-emitting devices manufactured according to Examples 1 to 6 and Comparative Example 1;
  • FIG. 6 is a graph of measurement of maximum emission wavelength of organic light-emitting devices manufactured according to Examples 1 to 6 and Comparative Example 1;
  • FIGS. 7 and 8 are graphs of measurement of electrical conductivity of organic light-emitting devices manufactured according to Examples 7 to 17.
  • FIG. 9 is a cross-sectional view showing a light-emitting apparatus according to an embodiment of the present disclosure.
  • an organic light-emitting device including: a first electrode;
  • each of the charge generating layers including one n-type charge generating layer and one p-type charge generating layer,
  • n may be an integer of 2 or more
  • At least one of the n-type charge generating layers in the number of m ⁇ 1 and the p-type charge generating layers in the number of m ⁇ 1 may include a first inorganic material selected from a late transition metal, a metalloid, a compound including two or more late transition metals, a compound including two or more metalloids, a compound including a late transition metal and a metalloid, or any combination thereof,
  • the late transition metal may be at least one selected from aluminum (Al), gallium (Ga), indium (In), thallium (Tl), tin (Sn), lead (Pb), flerovium (Fl), bismuth (Bi), and polonium (Po),
  • the metalloid may be at least one selected from boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te), and astatine (At), and
  • the first inorganic material may be the compound including a late transition metal and a metalloid.
  • the material was spin-coated on an ITO substrate to form a 50 nm thin film, and then heat-treated for 5 minutes at 200° C. on a hot plate in air, and the work function was evaluated.
  • the equipment used for the evaluation was UPS (Ultraviolet Photoelectron Spectroscopy).
  • FIG. 1 is a schematic cross-sectional view of an organic light-emitting device 10 according to an embodiment.
  • the organic light-emitting device 10 may include a first electrode 110 , a second electrode 190 facing the first electrode 110 , m emission units 153 stacked between the first electrode 110 and the second electrode 190 , and m ⁇ 1 charge generating layers 155 between two adjacent emission units among the m emission units 153 , each of the charge generating layers 155 including one n-type charge generating layer 155 ′ and one p-type charge generating layer 155 ′′.
  • emission unit of them emission units 153 is not particularly limited as long as the emission unit has a function capable of emitting light.
  • the emission unit may include at least one emission layer.
  • the emission unit may further include an organic layer, in addition to an emission layer.
  • the organic light-emitting device 10 may include m stacked emission units 153 , and m may be an integer of 2 or more. m (which is the number of the emission units) may be selected, as necessary, and the maximum number of the emission units are not particularly limited. For example, the organic light-emitting device may include two, three, four, or five emission units.
  • a maximum emission wavelength of light emitted from at least one emission unit among the m emission units may be different from a maximum emission wavelength of light emitted from at least one emission unit among other (remaining) emission units.
  • a maximum emission wavelength of light emitted from the first emission unit may be different from a maximum emission wavelength of light emitted from the second emission unit.
  • emission layers in the first emission unit and the second emission unit may each independently include i) a single-layered structure including (e.g., consisting of) a single layer including (e.g., consisting of) a single material, ii) a single-layered structure including (e.g., consisting of) a single layer including (e.g., consisting of) a plurality of different materials, or iii) a multi-layered structure having a plurality of layers including (e.g., consisting of) a plurality of different materials.
  • light emitted from the first emission unit or the second emission unit may be single-color light or mixed-color light.
  • a maximum emission wavelength of light emitted from the first emission unit may be identical to a maximum emission wavelength of light emitted from the second emission unit, but may be different from a maximum emission wavelength of light emitted from the third emission unit.
  • a maximum emission wavelength of light emitted from the first emission unit, a maximum emission wavelength of light emitted from the second emission unit, and a maximum emission wavelength of light emitted from the third emission unit may be different from one another.
  • maximum emission wavelengths of light respectively emitted from the m emission units may be identical to each other.
  • maximum emission wavelengths of light respectively emitted from the m emission units may each independently be selected in a range of about 370 nm to about 780 nm.
  • the maximum emission wavelengths of light respectively emitted from the m emission units may each independently be selected in a range of about 370 nm to about 500 nm, about 500 nm to about 580 nm, or about 580 nm to about 780 nm.
  • the organic light-emitting device 10 may include a charge generating layer 155 between two adjacent emission units 153 among the m emission units 153 , wherein the term “adjacent” refers to an arrangement relationship between layers that are closest to each other among layers that are described to be adjacent.
  • the two adjacent emission units refers to an arrangement relationship between two emission units that are located most closely to each other among a plurality of emission units.
  • the “adjacent”, in some cases, may refer to a case in which two layers are physically in contact with each other or a case in which another layer (that may not be described) may be located between the two layers.
  • an emission unit adjacent to a second electrode refers to, among a plurality of emission units, an emission unit that is located most closely to the second electrode.
  • the second electrode may be physically in contact with the emission unit, but in other embodiments, other layers may be located between the second electrode and the emission unit.
  • an electron transport layer may be located between the second electrode and the emission unit.
  • a charge generating layer may be located between two adjacent emission units.
  • the charge generating layer is a layer acting as a cathode with respect to one emission unit among two adjacent emission units, by generating electron(s), and an anode with respect to the other emission unit among the two adjacent emission units, by generating hole(s), and the charge generating layer refers to a layer that is not directly connected with an electrode, but that separates adjacent emission units.
  • An organic light-emitting device including m emission units may include m ⁇ 1 charge generating layers.
  • the charge generating layer 155 may include the n-type charge generating layer 155 ′ and the p-type charge generating layer 155 ′′.
  • the n-type charge generating layer 155 ′ and the p-type charge generating layer 155 ′′ may be in direct contact with each other to form N-P junction. Due to the N-P junction, an electron and a hole may be simultaneously (or concurrently) generated between the n-type charge generating layer 155 ′ and the p-type charge generating layer 155 ′′. The generated electron may be transferred, via the n-type charge generating layer 155 ′, to one emission unit among two adjacent emission units.
  • the generated hole may be transferred, via the p-type charge generating layer 155 ′′, to the other emission unit among the two adjacent emission units.
  • charge generating layers 155 each include one n-type charge generating layer 155 ′ and one p-type charge generating layer 155 ′′
  • the organic light-emitting device 10 including the m ⁇ 1 charge generating layers 155 may include n-type charge generating layers 155 ′ in the number of m ⁇ 1 and p-type charge generating layers 155 ′′ in the number of m ⁇ 1.
  • n-type refers to n-type semiconductor characteristics, for example, electron injection characteristics or electron transport characteristics.
  • p-type refers to p-type semiconductor characteristics, for example, hole injection characteristics or hole transport characteristics.
  • At least one of the n-type charge generating layers 155 ′ in the number of m ⁇ 1 and the p-type charge generating layers 155 ′′ in the number of m ⁇ 1 includes a first inorganic material selected from a late transition metal, a metalloid, a compound including two or more late transition metals, a compound including two or more metalloids, a compound including a late transition metal and a metalloid, or any combination thereof.
  • the compound including two or more late transition metals may be an alloy including the two or more late transition metals.
  • the compound including two or more late transition metals may be a compound consisting of the two or more late transition metals.
  • the compound including two or more metalloids may be an alloy including the two or more metalloids.
  • the compound including two or more metalloids may be a compound consisting of the two or more metalloids.
  • the compound including a late transition metal and a metalloid may be an alloy including the late transition metal and the metalloid.
  • the compound including a late transition metal and a metalloid may be a compound consisting of the late transition metal and the metalloid.
  • At least one of the p-type charge generating layers 155 ′′ in the number of m ⁇ 1 may include the first inorganic material.
  • the first inorganic material may be at least one selected from a compound including two or more metalloids and a compound including a late transition metal and a metalloid.
  • a composition ratio of the late transition metal and the metalloid may be from about 50:1 to about 1:50.
  • the composition ratio of the late transition metal and the metalloid may be from about 20:1 to about 1:20.
  • the composition ratio of the late transition metal and the metalloid may be from about 10:1 to about 1:10.
  • the composition ratio of the late transition metal and the metalloid may be from about 5:1 to about 1:10.
  • the composition ratio of the late transition metal and the metalloid may be from about 4:1 to about 1:8.
  • the composition ratio of the late transition metal and the metalloid may be from about 3:1 to about 1:6.
  • the composition ratio of the late transition metal and the metalloid may be from about 2:1 to about 1:4.
  • the composition ratio of the late transition metal and the metalloid may be from about 2:1 to about 1:2.
  • an amount of the metalloid in the first inorganic material may be greater than or equal to an amount of the late transition metal in the first inorganic material.
  • an absolute value of a work function of the first inorganic material may be about 3.0 eV or more.
  • the absolute value of a work function of the first inorganic material may be about 3.5 eV or more.
  • the absolute value of a work function of the first inorganic material may be about 4.0 eV or more.
  • the late transition metal may be at least one selected from aluminum (Al), gallium (Ga), indium (In), thallium (Tl), tin (Sn), lead (Pb), flerovium (Fl), bismuth (Bi), and polonium (Po).
  • the late transition metal may be at least one selected from Al, Ga, In, Tl, Sn, Pb, Fl, and Bi.
  • the late transition metal may be any combination of two or more selected from Al, Ga, In, Tl, Sn, Pb, Fl, and Bi, and late transition metals of any combination selected therefrom may be included in a compound including two or more late transition metals or the compound including a late transition metal and a metalloid.
  • the metalloid may be at least one selected from Si, Ge, As, Sb, and Te.
  • the metalloid may be any combination of two or more selected from Si, Ge, As, Sb, and Te, and metalloids of any combination selected therefrom may be included in a compound including two or more metalloids or the compound including a late transition metal and a metalloid.
  • the first inorganic material may be at least one selected from Bi 2 Te 3 , Bi 7 Te 3 , Bi 2 Te, Bi 4 Te 3 , BiTe, Bi 6 Te 7 , Bi 4 Te 5 , Bi x Te y (0 ⁇ x ⁇ 100, 0 ⁇ y ⁇ 100, 0 ⁇ x+y ⁇ 100), Sb 2 Te 3 , In 2 Te 3 , Ga 2 Te 2 , Al 2 Te 3 , Tl 2 Te 3 , As 2 Te 3 , GeSbTe, SnTe, PbTe, SiTe, GeTe, FITe, SiGe, AlInSb, AlGaSb, AlAsSb, GaAs, InSb, AlSb, AlAs, Al a In a Sb(0 ⁇ a ⁇ 1), Al b In (1-b) Sb(0 ⁇ b ⁇ 1), AlSb, GaSb, and AllnGaAs.
  • the first inorganic material may be at least one selected from Bi 2 Te 3 , Bi 7 Te 3 , Bi 2 Te, Bi 4 Te 3 , BiTe, Bi 6 Te 7 , Bi 4 Te 5 , and Bi x Te y (0 ⁇ x ⁇ 100, 0 ⁇ y ⁇ 100, 0 ⁇ x+y ⁇ 100).
  • a thermal evaporation temperature of the first inorganic material may be about 1,500° C. or less.
  • the thermal evaporation temperature of the first inorganic material may be from about 70° C. to about 1,500° C.
  • the thermal evaporation temperature of the first inorganic material may be from about 70° C. to about 1,000° C.
  • the thermal evaporation temperature of the first inorganic material may be from about 100° C. to about 1,000° C.
  • the thermal evaporation temperature of the first inorganic material may be from about 100° C. to about 700° C.
  • the thermal evaporation temperature of the first inorganic material may be from about 250° C. to about 550° C.
  • a material for the n-type charge generating layers 155 ′ in the number of m ⁇ 1 is not particularly limited and may be any suitable material that can be included in an n-type charge generating layer.
  • the n-type charge generating layers 155 ′ may include a metal-free compound including at least one ⁇ electron-deficient nitrogen-containing ring, a compound represented by Formula 601, a metal, a metal oxide, a metal carbide, a metal halide, or any mixture thereof:
  • Ar 601 may be a substituted or unsubstituted C 5 -C 60 carbocyclic group or a substituted or unsubstituted C 1 -C 60 heterocyclic group,
  • xe11 may be 1, 2, or 3,
  • L 601 may be selected from a substituted or unsubstituted C 3 -C 10 cycloalkylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkylene group, a substituted or unsubstituted C 3 -C 10 cycloalkenylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkenylene group, a substituted or unsubstituted C 6 -C 60 arylene group, a substituted or unsubstituted C 1 -C 60 heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group,
  • xe1 may be an integer from 0 to 5
  • R 601 may be selected from a substituted or unsubstituted C 3 -C 10 cycloalkyl group, a substituted or unsubstituted C 1 -C 10 heterocycloalkyl group, a substituted or unsubstituted C 3 -C 10 cycloalkenyl group, a substituted or unsubstituted C 1 -C 10 heterocycloalkenyl group, a substituted or unsubstituted C 6 -C 60 aryl group, a substituted or unsubstituted C 6 -C 60 aryloxy group, a substituted or unsubstituted C 6 -C 60 arylthio group, a substituted or unsubstituted C 1 -C 60 heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group,
  • Q 601 to Q 603 may each independently be a C 1 -C 10 alkyl group, a C 1 -C 10 alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, or a naphthyl group, and
  • xe21 may be an integer from 1 to 5.
  • the “ ⁇ electron-deficient nitrogen-containing ring” is the same as described in connection with an electron transport region described herein below.
  • the metal when at least one of the n-type charge generating layers 155 ′ in the number of m ⁇ 1 includes the metal, the metal may be an alkali metal, an alkaline earth metal, a rare earth metal, a transition metal, a late transition metal, a metalloid, or any combination thereof, but embodiments of the present disclosure are not limited thereto.
  • the metal oxide when at least one of the n-type charge generating layers 155 ′ in the number of m ⁇ 1 includes the metal oxide, the metal oxide may be an alkali metal oxide, but embodiments of the present disclosure are not limited thereto.
  • the metal halide when at least one of the n-type charge generating layers 155 ′ in the number of m ⁇ 1 includes the metal halide, the metal halide may be an alkali metal halide, but embodiments of the present disclosure are not limited thereto.
  • At least one of the n-type charge generating layers 155 ′ in the number of m ⁇ 1 may include at least one selected from Yb, Ag, Al, Sm, Mg, Li, RbI, Ti, Rb, Na, K, Ba, Mn, and YbSi 2 , but embodiments of the present disclosure are not limited thereto.
  • at least one of the n-type charge generating layers 155 ′ in the number of m ⁇ 1 may include at least one selected from Yb, Ag, and Al, but embodiments of the present disclosure are not limited thereto.
  • At least one of the p-type charge generating layers 155 ′′ in the number of m ⁇ 1 may include the first inorganic material and a hole transport material.
  • the hole transport material is not particularly limited as long as the hole transport material is a material having hole transport characteristics, and for example, may be selected from a group represented by Formula 201, a group represented by Formula 202, and a group represented by Formula 301-2.
  • a 301 to A 304 may each independently be selected from a benzene, a naphthalene, a phenanthrene, a fluoranthene, a triphenylene, a pyrene, a chrysene, a pyridine, a pyrimidine, an indene, a fluorene, a spiro-bifluorene, a benzofluorene, a dibenzofluorene, an indole, a carbazole, a benzocarbazole, a dibenzocarbazole, a furan, a benzofuran, a dibenzofuran, a naphthofuran, a benzonaphthofuran, a dinaphthofuran, a thiophene, a benzothiophene, a dibenzothiophene, a naphthothiophene, a benzona
  • X 301 may be O, S, or N-[(L 304 ) xb4 -R 304 ],
  • L 201 to L 204 and L 301 to L 303 may each independently be selected from a substituted or unsubstituted C 3 -C 10 cycloalkylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkylene group, a substituted or unsubstituted C 3 -C 10 cycloalkenylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkenylene group, a substituted or unsubstituted C 6 -C 60 arylene group, a substituted or unsubstituted C 1 -C 60 heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group,
  • L 205 may be selected from *—O—*′, *—S—*′, *—N(Q 201 )-*′, a substituted or unsubstituted C 1 -C 20 alkylene group, a substituted or unsubstituted C 2 -C 20 alkenylene group, a substituted or unsubstituted C 3 -C 10 cycloalkylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkylene group, a substituted or unsubstituted C 3 -C 10 cycloalkenylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkenylene group, a substituted or unsubstituted C 6 -C 60 arylene group, a substituted or unsubstituted C 1 -C 60 heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a
  • xa1 to xa4 may each independently be an integer from 0 to 3,
  • xa5 may be an integer from 1 to 10,
  • xb1 to xb4 may each independently be an integer from 0 to 5
  • xb22 and xb23 may each independently be 0, 1, or 2
  • R 201 to R 204 and Q 201 may each independently be selected from a substituted or unsubstituted C 3 -C 10 cycloalkyl group, a substituted or unsubstituted C 1 -C 10 heterocycloalkyl group, a substituted or unsubstituted C 3 -C 10 cycloalkenyl group, a substituted or unsubstituted C 1 -C 10 heterocycloalkenyl group, a substituted or unsubstituted C 6 -C 60 aryl group, a substituted or unsubstituted C 6 -C 60 aryloxy group, a substituted or unsubstituted C 6 -C 60 arylthio group, a substituted or unsubstituted C 1 -C 60 heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aro
  • R 301 to R 304 may each independently be selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a substituted or unsubstituted C 1 -C 60 alkyl group, a substituted or unsubstituted C 2 -C 60 alkenyl group, a substituted or unsubstituted C 2 -C 60 alkynyl group, a substituted or unsubstituted C 1 -C 60 alkoxy group, a substituted or unsubstituted C 3 -C 10 cycloalkyl group, a substituted or unsubstituted C 1 -C 10 heterocycloalkyl group, a substituted or unsubstituted C 3 -C 10 cycloalkenyl group, a substituted or unsubstituted C 1 -
  • R 311 to R 314 may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C 1 -C 20 alkyl group, a C 1 -C 20 alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, —Si(Q 31 )(Q 32 )(Q 33 ), —N(Q 31 )(Q 32 ), —B(Q 31 )(Q 32 ), —C( ⁇ O)(Q 31 ), —S( ⁇ O) 2 (Q 31 ), and —P( ⁇ O)(Q 31 )(Q 32 ),
  • Q 31 to Q 33 and Q 301 to Q 303 may each independently be selected from a C 1 -C 10 alkyl group, a C 1 -C 10 alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group.
  • an amount of a first inorganic material included in the p-type charge generating layer 155 ′′ may be selected in a range of about 0.01 parts by weight to about 49.9 parts by weight, based on 100 parts by weight of a hole transport material.
  • an amount of a first inorganic material included in the p-type charge generating layer 155 ′′ may be selected in a range of about 0.1 parts by weight to about 49.9 parts by weight, based on 100 parts by weight of a hole transport material.
  • an amount of a first inorganic material included in the p-type charge generating layer 155 ′′ may be selected in a range of about 5 parts by weight to about 20 parts by weight, based on 100 parts by weight of a hole transport material.
  • a thickness of the n-type charge generating layer 155 ′ and a thickness of the p-type charge generating layer 155 ′′ may each independently be in a range of about 5 ⁇ to about 200 ⁇ .
  • the thickness of the n-type charge generating layer 155 ′ and the thickness of the p-type charge generating layer 155 ′′ may each independently be in a range of about 20 ⁇ to about 200 ⁇ , but embodiments of the present disclosure are not limited thereto.
  • the thickness of the n-type charge generating layer 155 ′ and the thickness of the p-type charge generating layer 155 ′′ may each independently be in a range of about 20 ⁇ to about 100 ⁇ , but embodiments of the present disclosure are not limited thereto.
  • the thicknesses of the n-type charge generating layer 155 ′ and the p-type charge generating layer 155 ′′ are within any of these ranges, a high-quality (or improved) organic light-emitting device may be implemented without a substantial increase in driving voltage.
  • FIG. 2 is a schematic cross-sectional view of an organic light-emitting device 20 according to an embodiment.
  • the organic light-emitting device 20 of FIG. 2 may include a first electrode 110 , a second electrode 190 facing the first electrode 110 , m emission units 153 stacked between the first electrode 110 and the second electrode 190 , and m ⁇ 1 charge generating layers 155 between two adjacent emission units among the m emission units 153 , each of the charge generating layers 155 including one n-type charge generating layer 155 ′ and one p-type charge generating layer 155 ′′.
  • At least one of the m ⁇ 1 charge generating layers 155 may further include an interlayer 155 a between an n-type charge generating layer 155 ′ and a p-type charge generating layer 155 ′′.
  • the interlayer 155 a may include the first inorganic material.
  • the first inorganic material included in the interlayer 155 a is the same as described in connection with the first inorganic material described above.
  • a first inorganic material included in at least one of the n-type charge generating layers 155 ′ in the number of m ⁇ 1 and the p-type charge generating layers 155 ′′ in the number of m ⁇ 1 may be identical to a first inorganic material included in the interlayer 155 a.
  • a first inorganic material included in at least one of the n-type charge generating layers 155 ′ in the number of m ⁇ 1 and the p-type charge generating layers 155 ′′ in the number of m ⁇ 1 may be different from a first inorganic material included in the interlayer 155 a.
  • an absolute value of a work function of the interlayer 155 a may be greater than or equal to an absolute value of a work function of the n-type charge generating layer 155 ′, and less than or equal to an absolute value of a work function of the p-type charge generating layer 155 ′′.
  • the organic light-emitting device 20 may include the interlayer 155 a between a p-type charge generating layer 155 ′′ including the first inorganic material and the hole transport material and an n-type charge generating layer 155 ′.
  • the organic light-emitting devices 10 and 20 may each further include a second inorganic material that is at least one selected from a halide compound of a transition metal, a halide compound of a late transition metal, and any combination thereof.
  • the transition metal is not particularly limited, but may be a transition metal of Group 10 to Group 12, for example, at least one selected from copper (Cu), nickel (Ni), and zinc (Zn).
  • the late transition metal is not particularly limited, but may be at least one selected from aluminum (Al), gallium (Ga), indium (In), thallium (Tl), tin(Sn), lead (Pb), flerovium (Fl), bismuth (Bi), and polonium (Po).
  • the halide compound refers to a material formed by bonding with a halogen
  • the halogen may be, for example, at least one selected from F, Cl, Br, and I.
  • the organic light-emitting devices 10 and 20 further include the second inorganic material, hole carriers are additionally supplied to a charge generating layer, and thus electrical characteristics/charge generation characteristics of the charge generating layer may be improved.
  • the second inorganic material may be at least one selected from CuF, CuCl, CuBr, CuI, NiF 2 , NiCl 2 , NiBr 2 , NiI 2 , ZnF 2 , ZnCl 2 , ZnBr 2 , ZnI 2 , ZnF 4 , and ZnI 4 , but embodiments of the present disclosure are not limited thereto.
  • the second inorganic material may be included in: i) a charge generating layer including a first inorganic material among the n-type charge generating layer 155 ′ and the p-type charge generating layer 155 ′′;
  • the charge generating layer including a first inorganic material and the auxiliary layer.
  • the auxiliary layer may be in a form of a single layer including (e.g., consisting of) the second inorganic material.
  • the organic light-emitting device 20 includes the interlayer 155 a including the first inorganic material and may further include an auxiliary layer (not shown) including the second organic material between the interlayer 155 a and the n-type charge generating layer 155 ′ or the interlayer 155 a and the p-type charge generating layer 155 ′′.
  • a charge generating layer including a first inorganic material may further include the second inorganic material.
  • an amount of the second inorganic material included in the charge generating layer may be selected in a range of about 0.1 by parts by weight to about 49.9 parts by weight, based on 50 parts by weight of the first inorganic material.
  • the amount of the second inorganic material included in the charge generating layer may be selected in a range of about 5 parts by weight to about 20 parts by weight, based on 50 parts by weight of the first inorganic material.
  • m may be 2 or 3.
  • An embodiment of an organic light-emitting device where m is 2 is the same as that described in connection with FIG. 3
  • an embodiment of an organic light-emitting device where m is 3 is the same as that described in connection with FIG. 4 .
  • m in the organic light-emitting device, m may be 2,
  • emission units may include a first emission unit and a second emission unit
  • the m ⁇ 1 charge generating layers may include a charge generating layer
  • the charge generating layer may be located between the first emission unit and the second emission unit,
  • the first emission unit may be located between the first electrode and the charge generating layer
  • the second emission unit may be located between the charge generating layer and the second electrode,
  • the charge generating layer may include an n-type charge generating layer and a p-type charge generating layer, wherein the n-type charge generating layer is located between the first emission unit and the second emission unit, and the p-type charge generating layer is located between the n-type charge generating layer and the second emission unit, and
  • At least one of the n-type charge generating layer and the p-type charge generating layer may include the first inorganic material.
  • an organic light-emitting device 30 includes: a first electrode 110 ; a second electrode 190 facing the first electrode 110 ; a first emission unit 153 - 1 stacked between the first electrode 110 and the second electrode 190 ; a second emission unit 153 - 2 stacked between the first emission unit 153 - 1 and the second electrode 190 ; and a charge generating layer 155 between the first emission unit 153 - 1 and the second emission unit 153 - 2 , wherein the first emission unit 153 - 1 is located between the first electrode 110 and the charge generating layer 155 , the second emission unit 153 - 2 is located between the charge generating layer 155 and the second electrode 190 , the charge generating layer 155 includes an n-type charge generating layer 155 ′ and a p-type charge generating layer 155 ′′, the n-type charge generating layer 155 ′ is located between the first emission unit 153 - 1 and the second emission unit 153 - 2 , and
  • the organic light-emitting device 30 may further include the interlayer between the n-type charge generating layer 155 ′ and the p-type charge generating layer 155 ′′.
  • m in the organic light-emitting device of the present embodiments, m may be 3,
  • the m emission units may include a first emission unit, a second emission unit, and a third emission unit,
  • the m ⁇ 1 charge generating layers may include a first charge generating layer and a second charge generating layer
  • the first charge generating layer may be located between the first emission unit and the second emission unit,
  • the second charge generating layer may be located between the second emission unit and the third emission unit,
  • the first emission unit may be located between the first electrode and the first charge generating layer
  • the second emission unit may be located between the first charge generating layer and the second charge generating layer,
  • the third emission unit may be located between the second charge generating layer and the second electrode,
  • the first charge generating layer may include a first n-type charge generating layer and a first p-type charge generating layer, wherein the first n-type charge generating layer may be located between the first emission unit and the second emission unit, and the first p-type charge generating layer may be located between the first n-type charge generating layer and the second emission unit,
  • the second charge generating layer may include a second n-type charge generating layer and a second p-type charge generating layer, wherein the second n-type charge generating layer may be located between the second emission unit and the third emission unit, and the second p-type charge generating layer may be located between the second n-type charge generating layer and the third emission unit, and
  • At least one of the first n-type charge generating layer, the second n-type charge generating layer, the first p-type charge generating layer, and the second p-type charge generating layer may include the first inorganic material.
  • an organic light-emitting device 40 includes: a first electrode 110 ; a second electrode 190 facing the first electrode 110 ; a first emission unit 153 - 1 stacked between the first electrode 110 and the second electrode 190 ; a second emission unit 153 - 2 stacked between the first emission unit 153 - 1 and the second electrode 190 ; a third emission unit 153 - 3 stacked between the second emission unit 153 - 2 and the second electrode 190 ; a first charge generating layer 155 - 1 between the first emission unit 153 - 1 and the second emission unit 153 - 2 ; and a second charge generating layer 155 - 2 between the second emission unit 153 - 2 and the third emission unit 153 - 3 , wherein the first emission unit 153 - 1 is located between the first electrode 110 and the first charge generating layer 155 - 1 , the second emission unit 153 - 2 is located between the first charge generating layer 155 - 1 and the second charge generating layer
  • the organic light-emitting device 40 may further include the interlayer described above between the first n-type charge generating layer 155 ′- 1 and the first p-type charge generating layer 155 ′′- 1 and/or between the second n-type charge generating layer 155 ′- 2 and the second p-type charge generating layer 155 ′′- 2 .
  • the interlayer may only be present between the first n-type charge generating layer 155 ′- 1 and the first p-type charge generating layer 155 ′′- 1 or between the second n-type charge generating layer 155 ′- 2 and the second p-type charge generating layer 155 ′′- 2 , or may be present between the first n-type charge generating layer 155 ′- 1 and the first p-type charge generating layer 155 ′′- 1 , and between the second n-type charge generating layer 155 ′- 2 and the second p-type charge generating layer 155 ′′- 2 .
  • a charge generating layer between the two or more emission layers may include an oxide or an organic material, wherein the oxide or the organic material has a deep lowest unoccupied molecular orbital (LUMO) energy level.
  • LUMO deep lowest unoccupied molecular orbital
  • a thermal evaporation temperature may be greater than 1,000° C., which is extremely high, and in the case of an organic material, thermal evaporation may be achieved, but the price of the device may be extremely expensive.
  • a charge generating layer for example, a p-type charge generating layer, includes a first inorganic material capable of thermal deposition including a late transition metal, a metalloid, or a late transition metal and a metalloid
  • the resulting device may be characterized by low driving voltage and higher current density at the same voltage, while thermal evaporation may be achieved in a low temperature, and may have excellent characteristics in terms of color purity and efficiency that are greater than or equal to those of devices in the related art.
  • the first inorganic material has a low thermal evaporation temperature compared to related metal materials, a thermal evaporation process may be achieved.
  • a work function of the first inorganic material may be adjusted by adjusting a ratio of the late transition metal and the metalloid.
  • a barrier between an n-type charge generating layer and a p-type charge generating layer may be adjusted such that charge may be efficiently (or suitably) generated.
  • an absolute value of a work function of a first inorganic material increases, and for example, an amount of a metalloid may be greater than or equal to an amount of a late transition metal.
  • Table 1 shows work functions according to ratios of Bi and Te as compounds (late transition metal and metalloid, respectively) in the first inorganic material according to an embodiment.
  • the organic light-emitting device may include the first inorganic material as a single-layered structure in a charge generating layer, or may include a hole transport material as well as the first inorganic material in a charge generating layer, and thus may include the first inorganic material as a dopant.
  • an organic light-emitting device when an organic light-emitting device includes a hole transport material as well as the first inorganic material, electrical conductivity of a hole injection layer may increase, and thus charge may be efficiently (or suitably) generated, and hole transport to an adjacent emission unit may be further facilitated, resulting in improvement of efficiency of the device.
  • the organic light-emitting device may optionally further include an interlayer including the first inorganic material between an n-type charge generating layer and a p-type charge generating layer, and thus a barrier between the n-type charge generating layer and the p-type charge generating layer may be lowered, and N-P junction may be further facilitated, resulting in lowering driving voltage.
  • a flat-display apparatus including: a thin-film transistor including a source electrode, a drain electrode, and an activation layer; and the organic light-emitting device, wherein the first electrode of the organic light-emitting device is electrically connected (coupled) with one selected from the source electrode and the drain electrode of the thin-film transistor.
  • organic layer refers to a single layer and/or a plurality of layers located between the first electrode and the second electrode of an organic light-emitting device.
  • a material included in the “organic layer” is not limited to an organic material.
  • a substrate may be additionally located under the first electrode 110 or above the second electrode 190 .
  • the substrate may be a glass substrate and/or a plastic substrate, each having excellent (or suitable) mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, and/or water resistance.
  • the first electrode 110 may be formed by depositing or sputtering a material for forming the first electrode 110 on the substrate.
  • the material for a first electrode may be selected from materials with a high work function to facilitate hole injection.
  • the first electrode 110 may be a reflective electrode, a semi-transmissive electrode, or a transmissive electrode.
  • a material for forming a first electrode 110 may be selected from indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO 2 ), zinc oxide (ZnO), and any combination thereof, but embodiments of the present disclosure are not limited thereto.
  • a material for forming a first electrode may be selected from magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al—Li), calcium (Ca), magnesium-indium (Mg—In), magnesium-silver (Mg—Ag), and any combination thereof, but embodiments of the present disclosure are not limited thereto.
  • the first electrode 110 may have a single-layered structure or a multi-layered structure including two or more layers.
  • the first electrode 110 may have a three-layered structure of ITO/Ag/ITO, but the structure of the first electrode 110 is not limited thereto.
  • the organic layer 150 is located on the first electrode 110 .
  • the organic layer 150 includes emission units 153 , 153 - 1 , 153 - 2 , and 153 - 3 .
  • the organic layer 150 may further include a hole transport region between the first electrode 110 and the emission units 153 , 153 - 1 , 153 - 2 , and 153 - 3 , and an electron transport region between the emission units 153 , 153 - 1 , 153 - 2 , and 153 - 3 and the second electrode 190 .
  • the hole transport region may have i) a single-layered structure including (e.g., consisting of) a single layer including (e.g., consisting of) a single material, ii) a single-layered structure including (e.g., consisting of) a single layer including (e.g., consisting of) a plurality of different materials, or iii) a multi-layered structure having a plurality of layers including (e.g., consisting of) a plurality of different materials.
  • the hole transport region may include at least one selected from a hole injection layer, a hole transport layer, an emission auxiliary layer, and an electron blocking layer.
  • the hole transport region may have a single-layered structure including (e.g., consisting of) a single layer including (e.g., consisting of) a plurality of different materials, or a multi-layered structure having a hole injection layer/hole transport layer structure, a hole injection layer/hole transport layer/emission auxiliary layer structure, a hole injection layer/emission auxiliary layer structure, a hole transport layer/emission auxiliary layer structure, or a hole injection layer/hole transport layer/electron blocking layer structure, wherein for each structure, constituting layers are sequentially stacked from the first electrode 110 in this stated order, but the structure of the hole transport region is not limited thereto.
  • the hole transport region may include at least one selected from m-MTDATA, TDATA, 2-TNATA, NPB(NPD), ⁇ -NPB, TPD, spiro-TPD, spiro-NPB, methylated NPB, TAPC, HMTPD, 4,4′,4′′-tris(N-carbazolyl)triphenylamine (TCTA), polyaniline/dodecylbenzenesulfonic acid (PANI/DBSA), poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (PEDOT/PSS), polyaniline/camphor sulfonic acid (PANI/CSA), polyaniline/poly(4-styrenesulfonate) (PANI/PSS), a compound represented by Formula 201 below, and a compound represented by Formula 202 below:
  • L 201 to L 204 may each independently be selected from a substituted or unsubstituted C 3 -C 10 cycloalkylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkylene group, a substituted or unsubstituted C 3 -C 10 cycloalkenylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkenylene group, a substituted or unsubstituted C 6 -C 60 arylene group, a substituted or unsubstituted C 1 -C 60 heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group,
  • L 205 may be selected from *—O—*′, *—S—*′, *—N(Q 201 )-*′, a substituted or unsubstituted C 1 -C 20 alkylene group, a substituted or unsubstituted C 2 -C 20 alkenylene group, a substituted or unsubstituted C 3 -C 10 cycloalkylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkylene group, a substituted or unsubstituted C 3 -C 10 cycloalkenylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkenylene group, a substituted or unsubstituted C 6 -C 60 arylene group, a substituted or unsubstituted C 1 -C 60 heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a
  • xa1 to xa4 may each independently be an integer from 0 to 3,
  • xa5 may be an integer from 1 to 10, and
  • R 201 to R 204 and Q 201 may each independently be selected from a substituted or unsubstituted C 3 -C 10 cycloalkyl group, a substituted or unsubstituted C 1 -C 10 heterocycloalkyl group, a substituted or unsubstituted C 3 -C 10 cycloalkenyl group, a substituted or unsubstituted C 1 -C 10 heterocycloalkenyl group, a substituted or unsubstituted C 6 -C 60 aryl group, a substituted or unsubstituted C 6 -C 60 aryloxy group, a substituted or unsubstituted C 6 -C 60 arylthio group, a substituted or unsubstituted C 1 -C 60 heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aro
  • R 201 and R 202 may optionally be linked to each other via a single bond, a dimethyl-methylene group, and/or a diphenyl-methylene group
  • R 203 and R 204 may optionally be linked to each other via a single bond, a dimethyl-methylene group, and/or a diphenyl-methylene group.
  • L 201 to L 205 may each independently be selected from:
  • Q 31 to Q 33 may each independently be selected from a C 1 -C 10 alkyl group, a C 1 -C 10 alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group.
  • xa1 to xa4 may each independently be 0, 1, or 2.
  • xa5 may be 1, 2, 3, or 4.
  • R 201 to R 204 and Q 201 may each independently be selected from: a phenyl group, a biphenyl group, a terphenyl group, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group,
  • a phenyl group a biphenyl group, a terphenyl group, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacen
  • At least one selected from R 201 to R 203 in Formula 201 may each independently be selected from:
  • a fluorenyl group a spiro-bifluorenyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothiophenyl group;
  • R 201 and R 202 may be linked to each other via a single bond, and/or ii) R 203 and R 204 may be linked to each other via a single bond.
  • At least one of R 201 to R 204 in Formula 202 may each independently be selected from:
  • the compound represented by Formula 201 may be represented by Formula 201A below:
  • the compound represented by Formula 201 may be represented by Formula 201A(1) below, but embodiments of the present disclosure are not limited thereto:
  • the compound represented by Formula 201 may be represented by Formula 201A-1 below, but embodiments of the present disclosure are not limited thereto:
  • the compound represented by Formula 202 may be represented by Formula 202A below:
  • the compound represented by Formula 202 may be represented by Formula 202A-1 below:
  • L 201 to L 203 xa1 to xa3, xa5, and R 202 to R 204 are the same as described above,
  • R 211 and R 212 are each independently the same as described in connection with R 203 , and
  • R 213 to R 217 may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C 1 -C 20 alkyl group, a C 1 -C 20 alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a phenyl group substituted with a C 1 -C 10 alkyl group, a phenyl group substituted with —F, a pentalenyl group, an indenyl group, a naphthyl group, an azulen
  • the hole transport region may include at least one compound selected from Compounds HT1 to HT39, but compounds to be included in the hole transport region are not limited thereto:
  • a thickness of the hole transport region may be in a range of about 50 ⁇ to about 10,000 ⁇ , for example, about 100 ⁇ to about 1,000 ⁇ .
  • the thickness of the hole injection layer may be in a range of about 100 ⁇ to about 9,000 ⁇ , for example, about 100 ⁇ to about 1,000 ⁇
  • the thickness of the hole transport layer may be in a range of about 50 ⁇ to about 2,000 ⁇ , for example, about 100 ⁇ to about 1,500 ⁇ .
  • the emission auxiliary layer may increase light-emission efficiency by compensating for an optical resonance distance according to the wavelength of light emitted by an emission layer, and the electron blocking layer may block or reduce the flow of electrons from an electron transport region.
  • the emission auxiliary layer and the electron blocking layer may each independently include any of the materials as described above.
  • the hole transport region may further include, in addition to the materials described above, a charge-generation material for the improvement of conductive properties.
  • the charge-generation material may be homogeneously or non-homogeneously dispersed in the hole transport region.
  • the charge-generation material may be, for example, a p-dopant.
  • a LUMO energy level of the p-dopant may be about ⁇ 3.5 eV or less.
  • the p-dopant may include at least one selected from a quinone derivative, a metal oxide, and a cyano group-containing compound, but embodiments of the present disclosure are not limited thereto.
  • the p-dopant may include at least one selected from:
  • a quinone derivative such as tetracyanoquinodimethane (TCNQ) and/or 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ);
  • a metal oxide such as a tungsten oxide and/or a molybdenum oxide
  • R 221 to R 223 may each independently be selected from a substituted or unsubstituted C 3 -C 10 cycloalkyl group, a substituted or unsubstituted C 1 -C 10 heterocycloalkyl group, a substituted or unsubstituted C 3 -C 10 cycloalkenyl group, a substituted or unsubstituted C 1 -C 10 heterocycloalkenyl group, a substituted or unsubstituted C 6 -C 60 aryl group, a substituted or unsubstituted C 1 -C 60 heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, and at least one of R 221 to R 223 may have at least one substituent selected from a cyano group, —F, —Cl, —B
  • emission units 153 , 153 - 1 , 153 - 2 , and 153 - 3 may each include an emission layer, and the emission layer may have a stacked structure of two or more layers, in which the two or more layers selected from a red emission layer, green emission layer, a yellow emission layer, and a blue emission layer are in contact with each other or are separated apart from each other.
  • the emission layer may have a mixed structure of two or more materials, in which the two or more materials selected from a red light-emitting material, a green light-emitting material, a yellow light-emitting material, and a blue light-emitting material are mixed with each other in a single layer.
  • the emission layer may further include an electron transport (ET)-auxiliary layer formed on (e.g., on one side of) the emission layer and/or a hole transport (HT)-auxiliary layer formed under (e.g., on another side, opposite from the one side of) the emission layer.
  • the HT-auxiliary layer is a layer that may act as the hole transport layer, the emission auxiliary layer, and/or the electron blocking layer, which are described above
  • the ET-auxiliary layer is a layer that may act as a buffer layer, a hole blocking layer, an electron control layer, and/or an electron transport layer, which are described below. Materials that may be used in the HT-auxiliary layer and the ET-auxiliary layer are the same as described in connection with the hole transport region and an electron transport region described herein, respectively.
  • the emission layer may include a host and a dopant.
  • the dopant may include at least one selected from a phosphorescent dopant and a fluorescent dopant.
  • An amount of a dopant in the emission layer may be, based on about 100 parts by weight of the host, in a range of about 0.01 parts by weight to about 15 parts by weight, but embodiments of the present disclosure are not limited thereto.
  • a thickness of the emission layer may be in a range of about 100 ⁇ to about 1,000 ⁇ , for example, about 200 ⁇ to about 600 ⁇ . When the thickness of the emission layer is within this range, excellent (or improved) light-emission characteristics may be obtained without a substantial increase in driving voltage.
  • the host may include a compound represented by Formula 301 below.
  • Ar 301 may be a substituted or unsubstituted C 5 -C 60 carbocyclic group or a substituted or unsubstituted C 1 -C 60 heterocyclic group,
  • xb11 may be 1, 2, or 3,
  • L 301 may be selected from a substituted or unsubstituted C 3 -C 10 cycloalkylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkylene group, a substituted or unsubstituted C 3 -C 10 cycloalkenylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkenylene group, a substituted or unsubstituted C 6 -C 60 arylene group, a substituted or unsubstituted C 1 -C 60 heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group,
  • xb1 may be an integer from 0 to 5
  • R 301 may be selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a substituted or unsubstituted C 1 -C 60 alkyl group, a substituted or unsubstituted C 2 -C 60 alkenyl group, a substituted or unsubstituted C 2 -C 60 alkynyl group, a substituted or unsubstituted C 1 -C 60 alkoxy group, a substituted or unsubstituted C 3 -C 10 cycloalkyl group, a substituted or unsubstituted C 1 -C 10 heterocycloalkyl group, a substituted or unsubstituted C 3 -C 10 cycloalkenyl group, a substituted or unsubstituted C 1
  • xb21 may be an integer from 1 to 5
  • Q 301 to Q 303 may each independently be selected from a C 1 -C 10 alkyl group, a C 1 -C 10 alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group, but embodiments of the present disclosure are not limited thereto.
  • Ar 301 in Formula 301 may be selected from:
  • a naphthalene group a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, an indenoanthracene group, a dibenzofuran group, and a dibenzothiophene group; and
  • a naphthalene group a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, an indenoanthracene group, a dibenzofuran group, and a dibenzothiophene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group,
  • Q 31 to Q 33 may each independently be selected from a C 1 -C 10 alkyl group, a C 1 -C 10 alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group, but embodiments of the present disclosure are not limited thereto.
  • xb11 in Formula 301 is 2 or more, two or more of Ar 301 (s) may be linked via a single bond.
  • the compound represented by Formula 301 may be represented by one of Formula 301-1 or Formula 301-2:
  • a 301 to A 304 may each independently be selected from a benzene, a naphthalene, a phenanthrene, a fluoranthene, a triphenylene, a pyrene, a chrysene, a pyridine, a pyrimidine, an indene, a fluorene, a spiro-bifluorene, a benzofluorene, a dibenzofluorene, an indole, a carbazole, a benzocarbazole, a dibenzocarbazole, a furan, a benzofuran, a dibenzofuran, a naphthofuran, a benzonaphthofuran, a dinaphthofuran, a thiophene, a benzothiophene, a dibenzothiophene, a naphthothiophene, a benzona
  • X 301 may be O, S, or N-[(L 304 ) xb4 -R 304 ],
  • R 311 to R 314 may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C 1 -C 20 alkyl group, a C 1 -C 20 alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group —Si(Q 31 )(Q 32 )(Q 33 ), —N(Q 31 )(Q 32 ), —B(Q 31 )(Q 32 ), —C( ⁇ O)(Q 31 ), —S( ⁇ O) 2 (Q 31 ), and —P( ⁇ O)(Q 31 )(Q 32 ),
  • xb22 and xb23 may each independently be 0, 1, or 2
  • L 301 , xb1, R 301 , and Q 31 to Q 33 are the same as described above,
  • L 302 to L 304 are each independently the same as described in connection with L 301 ,
  • xb2 to xb4 are each independently the same as described in connection with xb1, and
  • R 302 to R 304 may each independently be the same as described in connection with R 301 .
  • L 301 to L 304 in Formulae 301, 301-1, and 301-2 may each independently be selected from:
  • R 301 to R 304 in Formulae 301, 301-1, and 301-2 may each independently be selected from:
  • a phenyl group a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group,
  • a phenyl group a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group,
  • the host may include an alkaline earth-metal complex.
  • the host may be selected from a Be complex (for example, Compound H55), an Mg complex, and/or a Zn complex.
  • the host may include at least one selected from 9,10-di(2-naphthyl)anthracene (ADN), 2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN), 9,10-di-(2-naphthyl)-2-t-butyl-anthracene (TBADN), 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP), 1,3-di(carbazole-9-yl)benzene (mCP), 1,3,5-tri(carbazol-9-yl)benzene (TCP), and Compounds H1 to H55, but embodiments of the present disclosure are not limited thereto:
  • Phosphorescent Dopant Included in Emission Layer in Organic Layer 150
  • the phosphorescent dopant may include an organometallic complex represented by Formula 401 below:
  • M may be selected from iridium (Ir), platinum (Pt), palladium (Pd), osmium (Os), titanium (Ti), zirconium (Zr), hafnium (Hf), europium (Eu), terbium (Tb), rhodium (Rh), and thulium (Tm),
  • L 401 may be a ligand represented by Formula 402, and xc1 may be 1, 2, or 3, wherein, when xc1 is 2 or more, two or more of L 401 (s) may be identical to or different from each other,
  • L 402 may be an organic ligand, and xc2 may be an integer from 0 to 4, wherein, when xc2 is 2 or more, two or more of L 402 (s) may be identical to or different from each other,
  • X 401 to X 404 may each independently be nitrogen or carbon
  • X 401 and X 403 may be linked via a single bond or a double bond
  • X 402 and X 404 may be linked via a single bond or a double bond
  • a 401 and A 402 may each independently be a C 5 -C 60 carbocyclic group or a C 1 -C 60 heterocyclic group,
  • X 406 may be a single bond, O, or S,
  • R 401 and R 402 may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a substituted or unsubstituted C 1 -C 20 alkyl group, a substituted or unsubstituted C 1 -C 20 alkoxy group, a substituted or unsubstituted C 3 -C 10 cycloalkyl group, a substituted or unsubstituted C 1 -C 10 heterocycloalkyl group, a substituted or unsubstituted C 3 -C 10 cycloalkenyl group, a substituted or unsubstituted C 1 -C 10 heterocycloalkenyl group, a substituted or unsubstituted C 6 -C 60 aryl group, a substituted or
  • xc11 and xc12 may each independently be an integer from 0 to 10, and
  • * and *′ in Formula 402 each indicate a binding site to M in Formula 401.
  • a 401 and A 402 in Formula 402 may each independently be selected from a benzene group, a naphthalene group, a fluorene group, a spiro-bifluorene group, an indene group, a pyrrole group, a thiophene group, a furan group, an imidazole group, a pyrazole group, a thiazole group, an isothiazole group, an oxazole group, an isoxazole group, a pyridine group, a pyrazine group, a pyrimidine group, a pyridazine group, a quinoline group, an isoquinoline group, a benzoquinoline group, a quinoxaline group, a quinazoline group, a carbazole group, a benzimidazole group, a benzofuran group, a benzothiophene group, an isobenzothi
  • X 401 may be nitrogen
  • X 402 may be carbon, or ii) each of X 401 and X 402 may be nitrogen.
  • R 401 and R 402 in Formula 402 may each independently be selected from:
  • a C 1 -C 20 alkyl group and a C 1 -C 20 alkoxy group each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a phenyl group, a naphthyl group, a cyclopentyl group, a cyclohexyl group, an adamantanyl group, a norbornanyl group, and a norbornenyl group;
  • a cyclopentyl group a cyclohexyl group, an adamantanyl group, a norbornanyl group, a norbornenyl group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothiophenyl group;
  • a cyclopentyl group a cyclohexyl group, an adamantanyl group, a norbornanyl group, a norbornenyl group a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, an isoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, a dibenzofuranyl group, and a dibenzothiophenyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group
  • Q 401 to Q 403 may each independently be selected from a C 1 -C 10 alkyl group, a C 1 -C 10 alkoxy group, a phenyl group, a biphenyl group, and a naphthyl group, but embodiments of the present disclosure are not limited thereto.
  • two A 401 (s) in two or more of L 401 (s) may optionally be linked to each other via X 407 , which is a linking group, or two A 402 (s) may optionally be linked to each other via X 408 , which is a linking group (see e.g., Compounds PD1 to PD4 and PD7).
  • L 402 in Formula 401 may be a monovalent, divalent, or trivalent organic ligand.
  • L 402 may be selected from halogen, diketone (for example, acetylacetonate), carboxylic acid (for example, picolinate), —C( ⁇ O), isonitrile, —CN, and phosphorus (for example, phosphine and/or phosphite), but embodiments of the present disclosure are not limited thereto.
  • the phosphorescent dopant may be selected from, for example, Compounds PD1 to PD25, but embodiments of the present disclosure are not limited thereto:
  • the fluorescent dopant may include an arylamine compound or a styrylamine compound.
  • the fluorescent dopant may include a compound represented by Formula 501 below.
  • Ar 501 may be a substituted or unsubstituted C 5 -C 60 carbocyclic group or a substituted or unsubstituted C 1 -C 60 heterocyclic group,
  • L 501 to L 503 may each independently be selected from a substituted or unsubstituted C 3 -C 10 cycloalkylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkylene group, a substituted or unsubstituted C 3 -C 10 cycloalkenylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkenylene group, a substituted or unsubstituted C 6 -C 60 arylene group, a substituted or unsubstituted C 1 -C 60 heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group,
  • xd1 to xd3 may each independently be an integer from 0 to 3,
  • R 501 and R 502 may each independently be selected from a substituted or unsubstituted C 3 -C 10 cycloalkyl group, a substituted or unsubstituted C 1 -C 10 heterocycloalkyl group, a substituted or unsubstituted C 3 -C 10 cycloalkenyl group, a substituted or unsubstituted C 1 -C 10 heterocycloalkenyl group, a substituted or unsubstituted C 6 -C 60 aryl group, a substituted or unsubstituted C 6 -C 60 aryloxy group, a substituted or unsubstituted C 6 -C 60 arylthio group, a substituted or unsubstituted C 1 -C 60 heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed
  • xd4 may be an integer from 1 to 6.
  • Ar 501 in Formula 501 may be selected from:
  • L 501 to L 503 in Formula 501 may each independently be selected from:
  • R 501 and R 502 in Formula 501 may each independently be selected from:
  • a phenyl group a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group,
  • a phenyl group a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group,
  • Q 31 to Q 33 may be selected from a C 1 -C 10 alkyl group, a C 1 -C 10 alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group.
  • xd4 in Formula 501 may be 2, but embodiments of the present disclosure are not limited thereto.
  • the fluorescent dopant may be selected from Compounds FD1 to FD22:
  • the fluorescent dopant may be selected from the following compounds, but embodiments of the present disclosure are not limited thereto.
  • the electron transport region may have i) a single-layered structure including (e.g., consisting of) a single layer including (e.g., consisting of) a single material, ii) a single-layered structure including (e.g., consisting of) a single layer including (e.g., consisting of) a plurality of different materials, or iii) a multi-layered structure having a plurality of layers including (e.g., consisting of) a plurality of different materials.
  • the electron transport region may include at least one selected from a buffer layer, a hole blocking layer, an electron control layer, an electron transport layer, and an electron injection layer, but embodiments of the present disclosure are not limited thereto.
  • the electron transport region may have an electron transport layer/electron injection layer structure, a hole blocking layer/electron transport layer/electron injection layer structure, an electron control layer/electron transport layer/electron injection layer structure, or a buffer layer/electron transport layer/electron injection layer structure, wherein for each structure, constituting layers are sequentially stacked from an emission layer.
  • embodiments of the structure of the electron transport region are not limited thereto.
  • the electron transport region (for example, a buffer layer, a hole blocking layer, an electron control layer, and/or an electron transport layer in the electron transport region) may include a metal-free compound containing at least one ⁇ electron-deficient nitrogen-containing ring.
  • the “ ⁇ electron-depleted nitrogen-containing ring” may be i) a 5-membered to 7-membered heteromonocyclic group having at least one *—N ⁇ *′ moiety, ii) a heteropolycyclic group in which two or more 5-membered to 7-membered heteromonocyclic groups, each having at least one *—N ⁇ *′ moiety, are condensed with each other, or iii) a heteropolycyclic group in which at least one of 5-membered to 7-membered heteromonocyclic groups, each having at least one *—N ⁇ *′ moiety, is condensed with at least one C 5 -C 60 carbocyclic group.
  • Examples of the ⁇ electron-deficient nitrogen-containing ring include an imidazole ring, a pyrazole ring, a thiazole ring, an isothiazole ring, an oxazole ring, an isoxazole ring, a pyridine ring, a pyrazine ring, a pyrimidine ring, a pyridazine ring, an indazole ring, a purine ring, a quinoline ring, an isoquinoline ring, a benzoquinoline ring, a phthalazine ring, a naphthyridine ring, a quinoxaline ring, a quinazoline ring, a cinnoline ring, a phenanthridine ring, an acridine ring, a phenanthroline ring, a phenazine ring, a benzimidazole ring, an isobenzothi
  • the electron transport region may include a compound represented by Formula 601 below:
  • Ar 601 may be a substituted or unsubstituted C 5 -C 60 carbocyclic group or a substituted or unsubstituted C 1 -C 60 heterocyclic group,
  • xe11 may be 1, 2, or 3,
  • L 601 may be selected from a substituted or unsubstituted C 3 -C 10 cycloalkylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkylene group, a substituted or unsubstituted C 3 -C 10 cycloalkenylene group, a substituted or unsubstituted C 1 -C 10 heterocycloalkenylene group, a substituted or unsubstituted C 6 -C 60 arylene group, a substituted or unsubstituted C 1 -C 60 heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group,
  • xe1 may be an integer from 0 to 5
  • R 601 may be selected from a substituted or unsubstituted C 3 -C 10 cycloalkyl group, a substituted or unsubstituted heterocycloalkyl group, a substituted or unsubstituted C 3 -C 10 cycloalkenyl group, a substituted or unsubstituted heterocycloalkenyl group, a substituted or unsubstituted C 6 -C 60 aryl group, a substituted or unsubstituted C 6 -C 60 aryloxy group, a substituted or unsubstituted C 6 -C 60 arylthio group, a substituted or unsubstituted C 1 -C 60 heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, —Si(Q 601 )(Q
  • Q 601 to Q 603 may each independently be a C 1 -C 10 alkyl group, a C 1 -C 10 alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, or a naphthyl group, and
  • xe21 may be an integer from 1 to 5.
  • At least one of Ar 601 (s) in the number of xe11 and R 601 (s) in the number of xe21 may include the ⁇ electron-deficient nitrogen-containing ring.
  • ring Ar 601 in Formula 601 may be selected from:
  • a benzene group a naphthalene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, an indenoanthracene group, a dibenzofuran group, a dibenzothiophene group, a carbazole group, an imidazole group, a pyrazole group, a thiazole group, an isothiazole group, an oxazole group, an isoxazole group, a pyridine group, a pyrazine group
  • a benzene group a naphthalene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, a dibenzofluorene group, a phenalene group, a phenanthrene group, an anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a naphthacene group, a picene group, a perylene group, a pentaphene group, an indenoanthracene group, a dibenzofuran group, a dibenzothiophene group, a carbazole group, an imidazole group, a pyrazole group, a thiazole group, an isothiazole group, an oxazole group, an isoxazole group, a pyridine group, a pyrazine group
  • Q 31 to Q 33 may each independently be selected from a C 1 -C 10 alkyl group, a C 1 -C 10 alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group.
  • xe11 in Formula 601 is 2 or more, two or more of Ar 601 (s) may be linked to each other via a single bond.
  • Ar 601 in Formula 601 may be an anthracene group.
  • the compound represented by Formula 601 may be represented by Formula 601-1:
  • X 614 may be N or C(R 614 ), X 615 may be N or C(R 615 ), X 616 may be N or
  • C(R 616 ), and at least one of X 614 to X 616 may be N,
  • L 611 to L 613 may each independently be the same as described in connection with L 601 ,
  • xe611 to xe613 may each independently be the same as described in connection with xe1 7
  • R 611 to R 613 may each independently be the same as described in connection with R 601 , and
  • R 614 to R 616 may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C 1 -C 20 alkyl group, a C 1 -C 20 alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group.
  • L 601 and L 611 to L 613 in Formulae 601 and 601-1 may each independently be selected from:
  • xe1 and xe611 to xe613 in Formulae 601 and 601-1 may each independently be 0, 1, or 2.
  • R 601 and R 611 to R 613 in Formulae 601 and 601-1 may each independently be selected from:
  • a phenyl group a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group,
  • a phenyl group a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a thiophenyl group, a furanyl group, a carbazolyl group, an indolyl group, an isoindolyl group, a benzofuranyl group, a benzothiophenyl group, a dibenzofuranyl group,
  • the electron transport region may include at least one compound selected from Compounds ET1 to ET36, but embodiments of the present disclosure are not limited thereto:
  • the electron transport region may include at least one compound selected from 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq 3 , BAlq, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole (TAZ), and NTAZ.
  • BCP 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline
  • Bphen 4,7-diphenyl-1,10-phenanthroline
  • Alq 3 a compound selected from 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (Bphen), 4,7-diphenyl-1,10-phenanthroline (Bphen), Alq 3 , BAlq, 3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4
  • Thicknesses of the buffer layer, the hole blocking layer, and the electron control layer may each independently be in a range of about 20 ⁇ to about 1,000 ⁇ , for example, about 30 ⁇ to about 300 ⁇ .
  • excellent (or improved) hole blocking characteristics and/or excellent (or improved) electron control characteristics may be obtained without a substantial increase in driving voltage.
  • a thickness of the electron transport layer may be in a range of about 100 ⁇ to about 1,000 ⁇ , for example, about 150 ⁇ to about 500 ⁇ . When the thickness of the electron transport layer is within the range described above, the electron transport layer may have satisfactory (or suitable) electron transport characteristics without a substantial increase in driving voltage.
  • the electron transport region (for example, the electron transport layer in the electron transport region) may further include, in addition to the materials described above, a metal-containing material.
  • the metal-containing material may include at least one selected from an alkali metal complex and an alkaline earth-metal complex.
  • the alkali metal complex may include a metal ion selected from a Li ion, a Na ion, a K ion, a Rb ion, and a Cs ion
  • the alkaline earth-metal complex may include a metal ion selected from a Be ion, a Mg ion, a Ca ion, a Sr ion, and a Ba ion.
  • a ligand coordinated with the metal ion of the alkali metal complex or the alkaline earth-metal complex may be selected from a hydroxy quinoline, a hydroxy isoquinoline, a hydroxy benzoquinoline, a hydroxy acridine, a hydroxy phenanthridine, a hydroxy phenyloxazole, a hydroxy phenylthiazole, a hydroxy diphenyloxadiazole, a hydroxy diphenylthiadiazole, a hydroxy phenylpyridine, a hydroxy phenylbenzimidazole, a hydroxy phenylbenzothiazole, a bipyridine, a phenanthroline, and a cyclopentadiene, but embodiments of the present disclosure are not limited thereto.
  • the metal-containing material may include a Li complex.
  • the Li complex may include, for example, Compound ET-D1 (lithium quinolate, LiQ) and/or Compound ET-D2:
  • the electron transport region may include an electron injection layer that facilitates electron injection from the second electrode 190 .
  • the electron injection layer may directly contact the second electrode 190 .
  • the electron injection layer may have i) a single-layered structure including (e.g., consisting of) a single layer including (e.g., consisting of) a single material, ii) a single-layered structure including (e.g., consisting of) a single layer including (e.g., consisting of) a plurality of different materials, or iii) a multi-layered structure having a plurality of layers including (e.g., consisting of) a plurality of different materials.
  • the electron injection layer may include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth-metal compound, a rare earth metal compound, an alkali metal complex, an alkaline earth-metal complex, a rare earth metal complex, or any combination thereof.
  • the alkali metal may be selected from Li, Na, K, Rb, and Cs. In one or more embodiments, the alkali metal may be Li, Na, or Cs. In one or more embodiments, the alkali metal may be Li or Cs, but embodiments of the present disclosure are not limited thereto.
  • the alkaline earth metal may be selected from Mg, Ca, Sr, and Ba.
  • the rare earth metal may be selected from Sc, Y, Ce, Yb, Gd, and Tb.
  • the alkali metal compound, the alkaline earth-metal compound, and the rare earth metal compound may be selected from oxides and halides (for example, fluorides, chlorides, bromides, and/or iodides) of the alkali metal, the alkaline earth metal, and the rare earth metal, respectively.
  • oxides and halides for example, fluorides, chlorides, bromides, and/or iodides
  • the alkali metal compound may be selected from alkali metal oxides (such as Li 2 O, Cs 2 O, and/or K 2 O), and alkali metal halides (such as LiF, NaF, CsF, KF, LiI, NaI, CsI, KI, and/or RbI).
  • the alkali metal compound may be selected from LiF, Li 2 O, NaF, LiI, NaI, CsI, and KI, but embodiments of the present disclosure are not limited thereto.
  • the alkaline earth-metal compound may be selected from alkaline earth-metal oxides, such as BaO, SrO, CaO, Ba x Sr 1-x O (0 ⁇ x ⁇ 1), and/or Ba x Ca 1-x O (0 ⁇ x ⁇ 1).
  • the alkaline earth-metal compound may be selected from BaO, SrO, and CaO, but embodiments of the present disclosure are not limited thereto.
  • the rare earth metal compound may be selected from YbF 3 , ScF 3 , ScO 3 , Sc 2 O 3 , Y 2 O 3 , Ce 2 O 3 , GdF 3 , and TbF 3 .
  • the rare earth metal compound may be selected from YbF 3 , ScF 3 , TbF 3 , YbI 3 , ScI 3 , and TbI 3 , but embodiments of the present disclosure are not limited thereto.
  • the alkali metal complex, the alkaline earth-metal complex, and the rare earth metal complex may include an ion of alkali metal, alkaline earth metal, and rare earth metal as described above, and a ligand coordinated with a metal ion of the alkali metal complex, the alkaline earth-metal complex, or the rare earth metal complex may be selected from hydroxy quinoline, hydroxy isoquinoline, hydroxy benzoquinoline, hydroxy acridine, hydroxy phenanthridine, hydroxy phenyloxazole, hydroxy phenylthiazole, hydroxy diphenyloxadiazole, hydroxy diphenylthiadiazole, hydroxy phenylpyridine, hydroxy phenylbenzimidazole, hydroxy phenylbenzothiazole, bipyridine, phenanthroline, and cyclopentadiene, but embodiments of the present disclosure are not limited thereto.
  • the electron injection layer may include (e.g., may consist of) an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth-metal compound, a rare earth metal compound, an alkali metal complex, an alkaline earth-metal complex, a rare earth metal complex, or any combination thereof, as described above.
  • the electron injection layer may further include an organic material.
  • an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth-metal compound, a rare earth metal compound, an alkali metal complex, an alkaline earth-metal complex, a rare earth metal complex, or any combination thereof may be homogeneously or non-homogeneously dispersed in a matrix including the organic material.
  • a thickness of the electron injection layer may be in a range of about 1 ⁇ to about 100 ⁇ , for example, about 3 ⁇ to about 90 ⁇ . When the thickness of the electron injection layer is within the range described above, the electron injection layer may have satisfactory (or suitable) electron injection characteristics without a substantial increase in driving voltage.
  • the second electrode 190 is located on the organic layer 150 described above.
  • the second electrode 190 may be a cathode, which is an electron injection electrode, and in this regard, a material for forming the second electrode 190 may be selected from a metal, an alloy, an electrically conductive compound, and combinations thereof, which have a relatively low work function.
  • the second electrode 190 may include at least one selected from lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al—Li), calcium (Ca), magnesium-indium (Mg—In), magnesium-silver (Mg—Ag), ITO, and IZO, but embodiments of the present disclosure are not limited thereto.
  • the second electrode 190 may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.
  • the second electrode 190 may have a single-layered structure or a multi-layered structure including two or more layers.
  • the organic light-emitting devices 10 , 20 , 30 , and 40 may each further include at least one selected from a first capping layer located under the first electrode and a second capping layer located on the second electrode.
  • Light generated in an emission layer of the organic layer 150 of each of the organic light-emitting devices 10 , 20 , 30 , and 40 may be extracted toward the outside through the first electrode 110 and the first capping layer, each of which may be a semi-transmissive electrode or a transmissive electrode, and/or light generated in an emission layer of the organic layer 150 of each of the organic light-emitting devices 10 , 20 , 30 , and 40 may be extracted toward the outside through the second electrode 190 and the second capping layer, each of which may be a semi-transmissive electrode or a transmissive electrode.
  • the first capping layer and the second capping layer may increase external luminescence efficiency according to the principle of constructive interference.
  • the first capping layer and the second capping layer may each independently be an organic capping layer including (e.g., consisting of) an organic material, an inorganic capping layer including (e.g., consisting of) an inorganic material, or a composite capping layer including an organic material and an inorganic material.
  • At least one selected from the first capping layer and the second capping layer may each independently include at least one material selected from carbocyclic compounds, heterocyclic compounds, amine-based compounds, porphyrine derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, alkali metal complexes, and alkaline earth-metal complexes.
  • the carbocyclic compound, the heterocyclic compound, and the amine-based compound may each independently be optionally substituted with a substituent containing at least one element selected from O, N, S, Se, Si, F, Cl, Br, and I.
  • at least one selected from the first capping layer and the second capping layer may each independently include an amine-based compound.
  • At least one selected from the first capping layer and the second capping layer may each independently include the compound represented by Formula 201 or the compound represented by Formula 202.
  • At least one selected from the first capping layer and the second capping layer may each independently include a compound selected from Compounds HT28 to HT33 and Compounds CP1 to CP5, but embodiments of the present disclosure are not limited thereto:
  • FIG. 9 is a cross-sectional view showing a light-emitting apparatus according to an embodiment of the present disclosure.
  • the light-emitting apparatus of FIG. 9 includes a substrate 100 , a thin-film transistor (TFT), a light-emitting device, and an encapsulation portion 300 that seals light-emitting device.
  • TFT thin-film transistor
  • the substrate 100 may be a flexible substrate, a glass substrate, or a metal substrate.
  • a buffer layer 210 may be located on the substrate 100 .
  • the buffer layer 210 prevents or reduces the penetration of impurities through the substrate 100 and may provide a flat surface on the substrate 100 .
  • a TFT may be located on the buffer layer 210 .
  • the TFT may include an activation layer (e.g., an active layer) 220 , a gate electrode 240 , a source electrode 260 , and a drain electrode 270 .
  • an activation layer e.g., an active layer
  • the activation layer 220 may include an inorganic semiconductor such as silicon or polysilicon, an organic semiconductor, or an oxide semiconductor, and may include a source region, a drain region and a channel region.
  • a gate insulating film 230 for insulating the activation layer 220 from the gate electrode 240 may be located on the activation layer 220 , and the gate electrode 240 may be located on the gate insulating film 230 .
  • An interlayer insulating film 250 may be located on the gate electrode 240 .
  • the interlayer insulating film 250 may be located between the gate electrode 240 and the source electrode 260 to insulate the gate electrode 240 from the source electrode 260 and between the gate electrode 240 and the drain electrode 270 to insulate the gate electrode 240 from the drain electrode 270 .
  • the source electrode 260 and the drain electrode 270 may be located on the interlayer insulating film 250 .
  • the interlayer insulating film 250 and the gate insulating film 230 may be formed to expose the source region and the drain region of the activation layer 220 , and the source electrode 260 and the drain electrode 270 may be located to be in contact with the exposed portions of the source region and the drain region of the activation layer 220 .
  • the TFT may be electrically connected to the light-emitting device to drive the light-emitting device, and may be covered by a passivation layer 280 .
  • the passivation layer 280 may include an inorganic insulating film, an organic insulating film, or a combination thereof.
  • the light-emitting device may be provided on the passivation layer 280 .
  • the light-emitting device includes the first electrode 110 , the organic layer 150 , and the second electrode 190 .
  • the first electrode 110 may be located on the passivation layer 280 .
  • the passivation layer 280 does not completely cover the drain electrode 270 and exposes a portion of the drain electrode 270 , and the first electrode 110 may be connected to the exposed portion of the drain electrode 270 .
  • a pixel defining layer 290 including an insulating material may be located on the first electrode 110 .
  • the pixel defining layer 290 may expose a certain region of the first electrode 110 , and the organic layer 150 may be formed in the exposed region of the first electrode 110 .
  • the pixel defining layer 290 may be a polyimide-based organic film and/or a polyacryl-based organic film. In an embodiment, at least one or more portions or layers of the organic layer 150 may extend beyond the upper portion of the pixel defining layer 290 and may thus be located in the form of a common layer.
  • the second electrode 190 may be located on the organic layer 150 , and a capping layer 170 may be additionally formed on the second electrode 190 .
  • the capping layer 170 may be formed to cover the second electrode 190 .
  • the encapsulation portion 300 may be located on the capping layer 170 .
  • the encapsulation portion 300 may be located on a light-emitting device and protects the light-emitting device from moisture or oxygen.
  • the encapsulation portion 300 may include: an inorganic film including silicon nitride (SiNx), silicon oxide (SiOx), indium tin oxide, indium zinc oxide, or a combination thereof; an organic film including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, an acrylic resin (for example, polymethyl methacrylate and/or polyacrylic acid), an epoxy-based resin (for example, aliphatic glycidyl ether (AGE), or a combination thereof; or a combination of an inorganic film and an organic film.
  • an inorganic film including silicon nitride (SiNx
  • Layers constituting the hole transport region, the emission layer, and layers constituting the electron transport region may each independently be formed in a certain region by using one or more suitable methods selected from vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) deposition, ink-jet printing, laser-printing, and laser-induced thermal imaging.
  • suitable methods selected from vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) deposition, ink-jet printing, laser-printing, and laser-induced thermal imaging.
  • the deposition may be performed at a deposition temperature of about 100° C. to about 500° C., a vacuum degree of about 10 ⁇ 8 torr to about 10 ⁇ 3 torr, and a deposition speed of about 0.01 ⁇ /sec to about 100 ⁇ /sec by taking into account a material to be included in a layer to be formed and the structure of a layer to be formed.
  • the spin coating may be performed at a coating speed of about 2,000 rpm to about 5,000 rpm and at a heat treatment temperature of about 80° C. to 200° C. by taking into account a material to be included in a layer to be formed and the structure of a layer to be formed.
  • C 1 -C 60 alkyl group refers to a linear or branched aliphatic saturated hydrocarbon monovalent group having 1 to 60 carbon atoms, and non-limiting examples thereof include a methyl group, an ethyl group, a propyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, a pentyl group, an isoamyl group, and a hexyl group.
  • C 1 -C 60 alkylene group refers to a divalent group having the same structure as the C 1 -C 60 alkyl group.
  • C 2 -C 60 alkenyl group refers to a hydrocarbon group having at least one carbon-carbon double bond in the middle and/or at either terminus of the C 2 -C 60 alkyl group, and non-limiting examples thereof include an ethenyl group, a propenyl group, and a butenyl group.
  • C 2 -C 60 alkenylene group refers to a divalent group having the same structure as the C 2 -C 60 alkenyl group.
  • C 2 -C 60 alkynyl group refers to a hydrocarbon group having at least one carbon-carbon triple bond in the middle and/or at either terminus of the C 2 -C 60 alkyl group, and non-limiting examples thereof include an ethynyl group, and a propynyl group.
  • C 2 -C 60 alkynylene group refers to a divalent group having the same structure as the C 2 -C 60 alkynyl group.
  • C 1 -C 60 alkoxy group refers to a monovalent group represented by —OA 101 (wherein Ani is the C 1 -C 60 alkyl group), and non-limiting examples thereof include a methoxy group, an ethoxy group, and an isopropyloxy group.
  • C 3 -C 10 cycloalkyl group refers to a monovalent saturated hydrocarbon monocyclic group having 3 to 10 carbon atoms, and non-limiting examples thereof include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, and a cycloheptyl group.
  • C 3 -C 10 cycloalkylene group refers to a divalent group having the same structure as the C 3 -C 10 cycloalkyl group.
  • C 1 -C 10 heterocycloalkyl group refers to a monovalent monocyclic group having at least one heteroatom selected from N, O, Si, P, and S as a ring-forming atom and 1 to 10 carbon atoms as the remaining ring-forming atoms, and non-limiting examples thereof include a 1,2,3,4-oxatriazolidinyl group, a tetrahydrofuranyl group, and a tetrahydrothiophenyl group.
  • C 1 -C 10 heterocycloalkylene group refers to a divalent group having the same structure as the C 1 -C 10 heterocycloalkyl group.
  • C 3 -C 10 cycloalkenyl group refers to a monovalent monocyclic group that has 3 to 10 carbon atoms and at least one carbon-carbon double bond in the ring thereof and no aromaticity, and non-limiting examples thereof include a cyclopentenyl group, a cyclohexenyl group, and a cycloheptenyl group.
  • C 3 -C 10 cycloalkenylene group refers to a divalent group having the same structure as the C 3 -C 10 cycloalkenyl group.
  • C 1 -C 10 heterocycloalkenyl group refers to a monovalent monocyclic group that has at least one heteroatom selected from N, O, Si, P, and S as a ring-forming atom, 1 to 10 carbon atoms as the remaining ring-forming atoms, and at least one double bond in its ring.
  • Non-limiting examples of the C 1 -C 10 heterocycloalkenyl group include a 4,5-dihydro-1,2,3,4-oxatriazolyl group, a 2,3-dihydrofuranyl group, and a 2,3-dihydrothiophenyl group.
  • C 1 -C 10 heterocycloalkenylene group refers to a divalent group having the same structure as the C 1 -C 10 heterocycloalkenyl group.
  • C 6 -C 60 aryl group refers to a monovalent group having a carbocyclic aromatic system having 6 to 60 carbon atoms.
  • Non-limiting examples of the C 6 -C 60 aryl group include a phenyl group, a naphthyl group, an anthracenyl group, a phenanthrenyl group, a pyrenyl group, and a chrysenyl group.
  • C 6 -C 60 arylene group used herein refers to a divalent group having the same structure as the C 6 -C 60 aryl group. When the C 6 -C 60 aryl group and the C 6 -C 60 arylene group each independently include two or more rings, the respective two or more rings may be fused to each other.
  • C 1 -C 60 heteroaryl group refers to a monovalent group having a heterocyclic aromatic system that has at least one heteroatom selected from N, O, Si, P, and S as a ring-forming atom, in addition to 1 to 60 carbon atoms.
  • Non-limiting examples of the C 1 -C 60 heteroaryl group include a pyridinyl group, a pyrimidinyl group, a pyrazinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, and an isoquinolinyl group.
  • C 1 -C 60 heteroarylene group refers to a divalent group having the same structure as the C 1 -C 60 heteroaryl group.
  • the respective two or more rings may be condensed (e.g., fused) with each other.
  • C 6 -C 60 aryloxy group refers to a monovalent group represented by —OA 102 (wherein A 102 is the C 6 -C 60 aryl group), and a C 6 -C 60 arylthio group used herein refers to a monovalent group represented by —SA 103 (wherein A 103 is the C 6 -C 60 aryl group).
  • the term “monovalent non-aromatic condensed polycyclic group” as used herein refers to a monovalent group having two or more rings condensed with each other, only carbon atoms as ring-forming atoms (e.g., 8 to 60 carbon atoms), and no aromaticity in its entire molecular structure (e.g., the molecular structure as a whole is non-aromatic).
  • a non-limiting example of the monovalent non-aromatic condensed polycyclic group is a fluorenyl group.
  • divalent non-aromatic condensed polycyclic group refers to a divalent group having the same structure as the monovalent non-aromatic condensed polycyclic group.
  • the term “monovalent non-aromatic condensed heteropolycyclic group” as used herein refers to a monovalent group having two or more rings condensed to each other, at least one heteroatom selected from N, O, Si, P, and S, other than carbon atoms (e.g., 1 to 60 carbon atoms), as a ring-forming atom, and no aromaticity in its entire molecular structure (e.g., the molecular structure as a whole is non-aromatic).
  • a non-limiting example of the monovalent non-aromatic condensed heteropolycyclic group is a carbazolyl group.
  • divalent non-aromatic condensed heteropolycyclic group refers to a divalent group having the same structure as the monovalent non-aromatic condensed heteropolycyclic group.
  • C 5 -C 60 carbocyclic group refers to a monocyclic or polycyclic group that includes only carbon atoms as ring-forming atoms and consists of 5 to 60 carbon atoms.
  • the C 5 -C 60 carbocyclic group may be an aromatic carbocyclic group or a non-aromatic carbocyclic group.
  • the C 5 -C 60 carbocyclic group may be a ring (such as benzene), a monovalent group (such as a phenyl group), or a divalent group (such as a phenylene group).
  • the C 5 -C 60 carbocyclic group may be a trivalent group or a quadrivalent group.
  • C 1 -C 60 heterocyclic group refers to a group having the same structure as the C 5 -C 60 carbocyclic group, except that as a ring-forming atom, at least one heteroatom selected from N, O, Si, P, and S is used in addition to carbon atoms (the number of carbon atoms may be in a range of 1 to 60).
  • Q 11 to Q 13 , Q 21 to Q 23 , and Q 31 to Q 33 may each independently be selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C 1 -C 60 alkyl group, a C 2 -C 60 alkenyl group, a C 2 -C 60 alkynyl group, a C 1 -C 60 alkoxy group, a C 3 -C 10 cycloalkyl group, a C 1 -C 10 heterocycloalkyl group, a C 3 -C 10 cycloalkenyl group, a C 10 heterocycloalkenyl group, a C 6 -C 60 aryl group, a C 1 -C 60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group
  • Ph refers to a phenyl group
  • Me refers to a methyl group
  • Et refers to an ethyl group
  • tert-Bu refers to a tert-butyl group
  • OMe refers to a methoxy group
  • biphenyl group refers to “a phenyl group substituted with a phenyl group”.
  • the “biphenyl group” may be “a substituted phenyl group” having a “C 6 -C 60 aryl group” as a substituent.
  • terphenyl group refers to “a phenyl group substituted with a biphenyl group”.
  • the “terphenyl group” may be a “substituted phenyl group” having, as a substituent, a “C 6 -C 60 aryl group substituted with a C 6 -C 60 aryl group”.
  • each of a first glass substrate (in which 15 ⁇ /cm 2 (100 ⁇ ) ITO available from Corning, Inc. is formed), a second glass substrate (in which (1000 ⁇ ) Ag is formed), and a third glass substrate (in which 15 ⁇ /cm 2 (100 ⁇ ) ITO available from Corning, Inc. is formed) was cut to a size of 50 mm ⁇ 50 mm ⁇ 0.7 mm, sonicated with isopropyl alcohol and pure water each for 5 minutes, and then cleaned by irradiation of ultraviolet rays and exposure to ozone for 30 minutes. Then, the first glass substrate to the third glass substrate were sequentially stacked to form an anode and loaded onto a vacuum deposition apparatus.
  • HT3 and F4-TCNQ were deposited at a weight ratio of 9:1 on the anode to form a hole injection layer having a thickness of 100 ⁇ .
  • HT3 was deposited on the hole injection layer to form a hole transport layer having a thickness of 100 ⁇ .
  • HT18 50 ⁇ was deposited on the hole transport layer to form a HT-auxiliary layer, and H8 and FD5 (here, an amount of FD5 is 1 wt %) were co-deposited thereon to form an emission layer having a thickness of 190 ⁇ , thereby completing the formation of a first emission unit.
  • ET28 (50 ⁇ ) was deposited on the first emission unit to form an ET-auxiliary layer.
  • ET1 and LiQ were deposited at a weight ratio of 5:5 on the ET-auxiliary layer to form an electron transport layer having a thickness of 250 ⁇ .
  • ET 36 and Yb (here, an amount of Yb is 5 wt %) were co-deposited on the electron transport layer to form an n-type charge generating layer having a thickness of 150 ⁇ , and F4-TCNQ (100 ⁇ ) was deposited thereon to form a p-type charge generating layer, thereby completing the formation of a first charge generating layer.
  • HT3 (430 ⁇ ) was deposited on the first charge generating layer to form a hole transport layer.
  • HT18 50 ⁇ was deposited on the hole transport layer to form a HT-auxiliary layer, and H8 and FD5 (here, an amount of FD5 is 1 wt %) were co-deposited thereon to form an emission layer having a thickness of 190 ⁇ , thereby completing the formation of a second emission unit.
  • ET28 (50 ⁇ ) was deposited on the second emission unit to form an ET-auxiliary layer.
  • ET1 and LiQ were deposited at a weight ratio of 5:5 on the ET-auxiliary layer to form an electron transport layer having a thickness of 250 ⁇ .
  • Yb (15 ⁇ ) was deposited on the electron transport layer to form an electron injection layer, thereby completing the formation of an electron transport region.
  • Ag and Mg (a weight ratio of 5:5) (100 ⁇ ) was deposited on the electron transport region to form a cathode, and HT28 (600 ⁇ ) was deposited on the cathode to form a capping layer, thereby completing the manufacture of an organic light-emitting device.
  • An organic light-emitting device was manufactured in substantially the same manner as in Comparative Example 1, except that a material for the p-type charge generating layer was changed to HT3 and Bi 2 Te 3 (here, an amount of Bi 2 Te 3 is 5 wt %), Bi 2 Te 3 (5 ⁇ ) was deposited as an interlayer on the n-type charge generating layer before the p-type charge generating layer was deposited on the n-type charge generating layer, and the p-type charge generating layer (100 ⁇ ) was deposited on the interlayer.
  • An organic light-emitting device was manufactured in substantially the same manner as in Example 1, except that the amount of Bi 2 Te 3 in the p-type charge generating layer was changed to 10 wt %.
  • An organic light-emitting device was manufactured in substantially the same manner as in Example 1, except that the amount of Bi 2 Te 3 in the p-type charge generating layer was changed to 15 wt %.
  • An organic light-emitting device was manufactured in substantially the same manner as in Example 1, except that the thickness of the interlayer was changed to 15 ⁇ .
  • An organic light-emitting device was manufactured in substantially the same manner as in Example 2, except that the thickness of the interlayer was changed to 15 ⁇ .
  • An organic light-emitting device was manufactured in substantially the same manner as in Example 3, except that the thickness of the interlayer was changed to 15 ⁇ .
  • An organic light-emitting device was manufactured in substantially the same manner as in Example 1, except that the material for the p-type charge generating layer was changed to an alloy of Yb and Te (amount: 10 wt %).
  • An organic light-emitting device was manufactured in substantially the same manner as in Example 1, except that the material for the p-type charge generating layer was changed to BiI 3 .
  • An organic light-emitting device was manufactured in substantially the same manner as in Example 1, except that the material for the p-type charge generating layer was changed into KI (amount: 10 wt %).
  • the driving voltage, current density (mA/cm 2 ) at the corresponding voltage, efficiency (Cd/A), white-color emission efficiency (Im/W), color coordinates (CIE_x, CIE_y), and efficiency (Cd/A/y) of the organic light-emitting devices manufactured according to Examples 1 to 6 and Comparative Examples 1 to 4 were measured and are shown in Table 2, and changes in current density according to voltage and maximum emission wavelengths were measured and are shown in FIG. 5 and FIG. 6 , respectively.
  • the organic light-emitting devices manufactured according to Examples 1 to 6 may have reduced driving voltage and higher current density at the same voltage, compared to the organic light-emitting devices manufactured according to Comparative Examples 1 to 4 (e.g., with the same (low) voltage as those of the Examples), and may have color purity and emission efficiency that are greater than or equal to or not significantly lower than those of devices in the related art.
  • the emission wavelengths of the organic light-emitting device manufactured according to Examples 1 to 6 are not significantly different from those of devices in the related art, and thus blue light may be emitted.
  • each of a first glass substrate (in which 15 ⁇ /cm 2 (100 ⁇ ) ITO available from Corning, Inc. is formed), a second glass substrate (in which (1000 ⁇ ) Ag is formed), and a third glass substrate (in which 15 ⁇ /cm 2 (100 ⁇ ) ITO available from Corning, Inc. is formed) was cut to a size of 50 mm ⁇ 50 mm ⁇ 0.7 mm, sonicated with isopropyl alcohol and pure water each for 5 minutes, and then cleaned by irradiation of ultraviolet rays and exposure to ozone for 30 minutes. Then, the first glass substrate to the third glass substrate were sequentially stacked to form an anode and loaded onto a vacuum deposition apparatus.
  • HT3 and F4-TCNQ were deposited at a weight ratio of 9:1 on the anode to form a hole injection layer having a thickness of 100 ⁇ .
  • HT3 was deposited on the hole injection layer to form a hole transport layer.
  • HT18 50 ⁇ was deposited on the hole transport layer to form a HT-auxiliary layer, and H8 and FD5 (here, an amount of FD5 is 1 wt %) were co-deposited thereon to form an emission layer having a thickness of 190 ⁇ , thereby completing the formation of a first emission unit.
  • ET28 (50 ⁇ ) was deposited on the first emission unit to form an ET-auxiliary layer.
  • ET1 was deposited on the ET-auxiliary layer to form an electron transport layer having a thickness of 200 ⁇ .
  • ET 36 and Yb (here, an amount of Yb is 1 wt %) were co-deposited on the electron transport layer to form an n-type charge generating layer having a thickness of 150 ⁇ , and HT3 and PbTe (here, an amount of PbTe is 5 wt %) were co-deposited thereon to form a p-type charge generating layer having a thickness of 150 ⁇ , thereby completing the formation of a first charge generating layer.
  • HT3 (430 ⁇ ) was deposited on the first charge generating layer to form a hole transport layer.
  • HT18 50 ⁇ was deposited on the hole transport layer to form a HT-auxiliary layer, and H8 and FD5 (here, an amount of FD5 is 1 wt %) were co-deposited thereon to form an emission layer having a thickness of 190 ⁇ , thereby completing the formation of a second emission unit.
  • ET28 (50 ⁇ ) was deposited on the second emission unit to form an ET-auxiliary layer.
  • ET1 was deposited on the ET-auxiliary layer to form an electron transport layer having a thickness of 250 ⁇ .
  • Yb (15 ⁇ ) was deposited on the electron transport layer to form an electron injection layer, thereby completing the formation of an electron transport region.
  • Ag and Mg (a weight ratio of 5:5) (100 ⁇ ) was deposited on the electron transport region to form a cathode, and HT28 (600 ⁇ ) was deposited on the cathode to form a capping layer, thereby completing the manufacture of an organic light-emitting device.
  • An organic light-emitting device was manufactured in substantially the same manner as in Example 7, except that 1 wt % of CuI was deposited on the n-type charge generating layer to additionally form an auxiliary layer between the n-type charge generating layer and the p-type charge generating layer, the amount of CuI being based on a total weight of the p-type charge generating layer.
  • An organic light-emitting device was manufactured in substantially the same manner as in Example 7, except that the p-type charge generating layer further included 1 wt % of CuI, based on a total weight of the p-type charge generating layer.
  • An organic light-emitting device was manufactured in substantially the same manner as in Example 7, except that the p-type charge generating layer further included 3 wt % of CuI, based on a total weight of the p-type charge generating layer.
  • An organic light-emitting device was manufactured in substantially the same manner as in Example 7, except that the p-type charge generating layer further included 5 wt % of CuI, based on a total weight of the p-type charge generating layer.
  • An organic light-emitting device was manufactured in substantially the same manner as in Example 7, except that the p-type charge generating layer further included 7 wt % of CuI, based on a total weight of the p-type charge generating layer.
  • An organic light-emitting device was manufactured in substantially the same manner as in Example 7, except that the p-type charge generating layer further included 10 wt % of CuI, based on a total weight of the p-type charge generating layer.
  • An organic light-emitting device was manufactured in substantially the same manner as in Example 8, except that 3 wt % of CuI was deposited to form an auxiliary layer.
  • An organic light-emitting device was manufactured in substantially the same manner as in Example 8, except that 5 wt % of CuI was deposited to form an auxiliary layer.
  • An organic light-emitting device was manufactured in substantially the same manner as in Example 8, except that 7 wt % of CuI was deposited to form an auxiliary layer.
  • An organic light-emitting device was manufactured in substantially the same manner as in Example 8, except that 10 wt % of CuI was deposited to form an auxiliary layer.
  • the organic light-emitting devices which further include CuI and manufactured according to Examples 8 to 17 have excellent electrical conductivity, compared to the organic light-emitting device manufactured according to Example 7, which does not include CuI and.
  • the organic light-emitting device may have low driving voltage, high efficiency, and long lifespan.
  • any numerical range recited herein is intended to include all sub-ranges of the same numerical precision subsumed within the recited range.
  • a range of “1.0 to 10.0” is intended to include all subranges between (and including) the recited minimum value of 1.0 and the recited maximum value of 10.0, that is, having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as, for example, 2.4 to 7.6.
  • Any maximum numerical limitation recited herein is intended to include all lower numerical limitations subsumed therein and any minimum numerical limitation recited in this specification is intended to include all higher numerical limitations subsumed therein. Accordingly, Applicant reserves the right to amend this specification, including the claims, to expressly recite any sub-range subsumed within the ranges expressly recited herein.

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