US20210151546A1 - Method of manufacturing organic light-emitting display apparatus including multilayer auxiliary electrode - Google Patents
Method of manufacturing organic light-emitting display apparatus including multilayer auxiliary electrode Download PDFInfo
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Abstract
A method of manufacturing an organic light-emitting display apparatus includes: forming an auxiliary electrode including: a first conductive layer; and a second conductive layer disposed on the first conductive layer, the second conductive layer having a resistance higher than a resistance of the first conductive layer; forming a first intermediate layer on the auxiliary electrode; exposing the first conductive layer includes forming a first opening in the first intermediate layer and an opening portion in the second conductive layer by removing a portion of the first intermediate layer and a portion of the second conductive layer of the auxiliary electrode; and forming an opposite electrode on the first intermediate layer and the first conductive layer, wherein the opposite electrode is disposed contacting the first conductive layer exposed through the first opening of the first intermediate layer and the opening portion of the second conductive layer.
Description
- This application is a continuation of U.S. patent application Ser. No. 15/686,063, filed on Aug. 24, 2017, which is a divisional of U.S. patent application Ser. No. 14/793,302, filed on Jul. 7, 2015, which claims priority from and the benefit of Korean Patent Application No. 10-2014-0170834, filed on Dec. 2, 2014, each of which is hereby incorporated by reference for all purposes as if fully set forth herein.
- One or more exemplary embodiments relate to an organic light-emitting display apparatus and a method of manufacturing the organic light-emitting display apparatus, and more particularly, to an organic light-emitting display apparatus which is easy to manufacture and has excellent light-emitting stability, and a method of manufacturing the organic light-emitting display apparatus.
- In an organic light-emitting display apparatus, each pixel includes an organic light-emitting device. The organic light-emitting device includes a pixel electrode, an opposite electrode facing the pixel electrode, and an intermediate layer interposed between the pixel electrode and the opposite electrode and including an emission layer. According to the above structure, the pixel electrode is in the form of an island patterned for each pixel, and the opposite electrode may be in a form that is integrated with respect to a plurality of pixels.
- However, such an integrated form of the opposite electrode may cause an IR drop in the opposite electrode with respect to the pixels. Accordingly, unintended deviations in brightness may be generated in the pixels.
- The above information disclosed in this Background section is only for enhancement of understanding of the background of the inventive concept, and, therefore, it may contain information that does not form the prior art that is already known in this country to a person of ordinary skill in the art.
- Exemplary embodiments provide the present inventive concept include an organic light-emitting display apparatus which is easy to manufacture and has excellent light-emitting stability, and a method of manufacturing the organic light-emitting display apparatus.
- Additional aspects will be set forth in the detailed description which follows, and, in part, will be apparent from the disclosure, or may be learned by practice of the inventive concept.
- According to one or more exemplary embodiments, an organic light-emitting display apparatus includes an auxiliary electrode including: a first conductive layer; and a second conductive layer disposed on the first conductive layer, the second conductive layer having a resistance higher than a resistance of the first conductive layer, wherein the second conductive layer includes an opening portion exposing at least a part of the first conductive layer; a pixel electrode; a pixel definition layer disposed on the pixel electrode and the auxiliary electrode, the pixel definition layer exposing at least a part of the pixel electrode and the auxiliary electrode; a first intermediate layer disposed on the pixel electrode and the auxiliary electrode, the first intermediate layer including a first opening corresponding to the opening portion; an emission layer disposed on the first intermediate layer overlapping at least a part of the pixel electrode exposed by the pixel definition layer; and an opposite electrode disposed on the first intermediate layer and the emission layer, the opposite electrode directly contacting the first conductive layer through the first opening and the opening portion.
- According to one or more exemplary embodiments, a method of manufacturing an organic light-emitting display apparatus includes: forming an auxiliary electrode including: a first conductive layer; and a second conductive layer disposed on the first conductive layer, the second conductive layer having a resistance higher than a resistance of the first conductive layer; forming a first intermediate layer on the auxiliary electrode; exposing the first conductive layer includes forming a first opening in the first intermediate layer and an opening portion in the second conductive layer by removing a portion of the first intermediate layer and a portion of the second conductive layer of the auxiliary electrode; and forming an opposite electrode on the first intermediate layer and the first conductive layer, wherein the opposite electrode is disposed contacting the first conductive layer exposed through the first opening of the first intermediate layer and the opening portion of the second conductive layer.
- The foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the claimed subject matter.
- The accompanying drawings, which are included to provide a further understanding of the inventive concept, and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the inventive concept, and, together with the description, serve to explain principles of the inventive concept.
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FIGS. 1, 2, 3, 4, 5, 6, 7A, and 7B are cross-sectional views schematically illustrating processes of an exemplary method of manufacturing an organic light-emitting display apparatus, according to one or more exemplary embodiments. -
FIGS. 8, 9, 10, and 11 are cross-sectional views schematically illustrating processes of an exemplary method of manufacturing an organic light-emitting display apparatus, according to one or more exemplary embodiments. -
FIG. 12 is a cross-sectional view schematically illustrating an organic light-emitting display apparatus manufactured according to an exemplary method of manufacturing an organic light-emitting display apparatus, according to one or more exemplary embodiments. -
FIG. 13 is a cross-sectional view schematically illustrating an organic light-emitting display apparatus manufactured according to an exemplary method of manufacturing an organic light-emitting display apparatus according to one or more exemplary embodiments. - In the following description, for the purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of various exemplary embodiments. It is apparent, however, that various exemplary embodiments may be practiced without these specific details or with one or more equivalent arrangements. In other instances, well-known structures and devices are shown in block diagram form in order to avoid unnecessarily obscuring various exemplary embodiments.
- In the accompanying figures, the size and relative sizes of layers, films, panels, regions, etc., may be exaggerated for clarity and descriptive purposes. Also, like reference numerals denote like elements.
- When an element or layer is referred to as being “on,” “connected to,” or “coupled to” another element or layer, it may be directly on, connected to, or coupled to the other element or layer or intervening elements or layers may be present. When, however, an element or layer is referred to as being “directly on,” “directly connected to,” or “directly coupled to” another element or layer, there are no intervening elements or layers present. For the purposes of this disclosure, “at least one of X, Y, and Z” and “at least one selected from the group consisting of X, Y, and Z” may be construed as X only, Y only, Z only, or any combination of two or more of X, Y, and Z, such as, for instance, XYZ, XYY, YZ, and ZZ. Like numbers refer to like elements throughout. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.
- Although the terms first, second, etc. may be used herein to describe various elements, components, regions, layers, and/or sections, these elements, components, regions, layers, and/or sections should not be limited by these terms. These terms are used to distinguish one element, component, region, layer, and/or section from another element, component, region, layer, and/or section. Thus, a first element, component, region, layer, and/or section discussed below could be termed a second element, component, region, layer, and/or section without departing from the teachings of the present disclosure.
- Spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper,” and the like, may be used herein for descriptive purposes, and, thereby, to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the drawings. Spatially relative terms are intended to encompass different orientations of an apparatus in use, operation, and/or manufacture in addition to the orientation depicted in the drawings. For example, if the apparatus in the drawings is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the exemplary term “below” can encompass both an orientation of above and below. Furthermore, the apparatus may be otherwise oriented (e.g., rotated 90 degrees or at other orientations), and, as such, the spatially relative descriptors used herein interpreted accordingly.
- The terminology used herein is for the purpose of describing particular embodiments and is not intended to be limiting. As used herein, the singular forms, “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. Moreover, the terms “comprises,” c omprising,” “includes,” and/or “including,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, components, and/or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
- Various exemplary embodiments are described herein with reference to sectional illustrations that are schematic illustrations of idealized exemplary embodiments and/or intermediate structures. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, exemplary embodiments disclosed herein should not be construed as limited to the particular illustrated shapes of regions, but are to include deviations in shapes that result from, for instance, manufacturing. For example, an implanted region illustrated as a rectangle will, typically, have rounded or curved features and/or a gradient of implant concentration at its edges rather than a binary change from implanted to non-implanted region. Likewise, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation takes place. Thus, the regions illustrated in the drawings are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to be limiting.
- Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure is a part. Terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense, unless expressly so defined herein.
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FIGS. 1, 2, 3, 4, 5, 6, 7A and 7B are cross-sectional views schematically illustrating processes of an exemplary method of manufacturing an organic light-emitting display apparatus, according to one or more exemplary embodiments. - First, referring to
FIG. 1 , anauxiliary electrode 210 a is formed. Theauxiliary electrode 210 a includes a firstconductive layer 211 a and a secondconductive layer 212 a disposed on the firstconductive layer 211 a. Resistance of the secondconductive layer 212 a may be higher than that of the firstconductive layer 211 a. For example, the firstconductive layer 211 a may include at least one of silver (Ag), Magnesium (Mg), Aluminum (Al), Platinum (Pt), Lead (Pd), Gold (Au), Nickel (Ni), Neodymium (Nd), Iridium (Ir), Chromium (Cr), and alloys thereof, and the secondconductive layer 212 a may include a light-transmissive conductive material including at least one of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), and aluminum zinc oxide (AZO). - As illustrated in
FIG. 1 , apixel electrode 210 may be formed in addition to theauxiliary electrode 210 a. Thepixel electrode 210 and theauxiliary electrode 210 a may be formed on the same layer and separated from each other, thereby being electrically insulated from each other. AlthoughFIG. 1 illustrates that thepixel electrode 210 and theauxiliary electrode 210 a are formed on a planarization layer 170 (or a protective layer), the exemplary embodiments are not limited thereto. Thepixel electrode 210 and theauxiliary electrode 210 a may be simultaneously formed, and thepixel electrode 210 may have the same structure as theauxiliary electrode 210 a. Thus,pixel electrode 210 may include afirst electrode layer 211 including substantially the same material as that of the firstconductive layer 211 a of theauxiliary electrode 210 a, and asecond electrode layer 212 including substantially the same material as that of the secondconductive layer 212 a of theauxiliary electrode 210 a. - As described later, the
pixel electrode 210 directly contacts a firstintermediate layer 221. Accordingly, a contact between thepixel electrode 210 and the firstintermediate layer 221 may be an ohmic contact. To this end, a portion of thepixel electrode 210 that contacts the firstintermediate layer 221 may include a light-transmissive conductive material including at least one of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), and aluminum zinc oxide (AZO). Thepixel electrode 210 may have relatively lower resistance by including, in addition to thesecond electrode layer 212 that includes the light-transmissive conductive material, thefirst electrode layer 211 disposed under thesecond electrode layer 212 having a resistance lower than that of thesecond electrode layer 212. For simplification of a manufacturing process, theauxiliary electrode 210 a may be simultaneously formed on the same layer as thepixel electrode 210 having substantially the same layered structure. Accordingly, theauxiliary electrode 210 a may include the firstconductive layer 211 a and the secondconductive layer 212 a. - Various layers may be formed before the
pixel electrode 210 and theauxiliary electrode 210 a are disposed on the substrate. InFIG. 1 , a thin film transistor (TFT) and a capacitor Cap are formed on asubstrate 100, theplanarization layer 170 is formed thereon, and thepixel electrode 210 and theauxiliary electrode 210 a are formed on theplanarization layer 170. - The
substrate 100 may be formed of various materials including at least one of a glass material, a metal material, and a plastic material, for example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide, etc. The organic light-emitting display apparatus may further include abuffer layer 110 configured to reduce or prevent intrusion of foreign materials into a semiconductor layer of the TFT, agate insulating layer 130 configured to insulate the semiconductor layer and a gate electrode of the TFT, aninterlayer insulating layer 150 configured to insulate source and drain electrodes and the gate electrode of the TFT, and theplanarization layer 170 covering the TFT and having an upper surface that is substantially flat. - A
pixel definition layer 180 may be formed to expose at least a part of thepixel electrode 210. For example, thepixel definition layer 180 may cover edges of thepixel electrode 210. Thepixel definition layer 180 having openings corresponding to each pixels, exposing at least a part of thepixel electrode 210, may be configured to define each of the pixels. Thepixel definition layer 180 may also increase a distance between an end portion of thepixel electrode 210 and an opposite electrode (not shown) formed later above thepixel electrode 210, and therefore, thepixel definition layer 180 may be configured to reduce or prevent generation of an arc from the end portion of thepixel electrode 210. Referring toFIG. 1 , thepixel electrode 210 and theauxiliary electrode 210 a are formed on the same layer, so thepixel definition layer 180 may also be formed to expose at least a part of theauxiliary electrode 210 a. - Referring to
FIG. 2 , the firstintermediate layer 221 may be formed on thepixel definition layer 180, thepixel electrode 210, and theauxiliary electrode 210 a. The firstintermediate layer 221 may be integrally formed over a plurality of pixels. - The first
intermediate layer 221 may have a single-layer structure or a multilayer structure. For example, when the firstintermediate layer 221 is formed of a polymer material, the firstintermediate layer 221 may be a hole transport layer (HTL) that is a single-layer structure including at least one of poly(ethylenedioxythiophene): poly-3,4-ethylene-dihydroxy thiophene and/or polyaniline (PANI). When the firstintermediate layer 221 is formed of a low-molecular weight material, the firstintermediate layer 221 may include a hole injection layer (HIL) and the HTL. - Referring to
FIG. 3 , anemission layer 223 is formed on the firstintermediate layer 221 corresponding to thepixel electrode 210. - Referring to
FIG. 4 , a secondintermediate layer 222 is formed covering the firstintermediate layer 221 and theemission layer 223. According to one or more exemplary embodiments, the secondintermediate layer 222 may be omitted. For example, when the firstintermediate layer 221 and theemission layer 223 are formed of a polymer material, the secondintermediate layer 222 may be omitted. When the firstintermediate layer 221 and theemission layer 223 are formed of a low-molecular weight material, the secondintermediate layer 222 may be formed, and the characteristics of the organic light-emitting device may be improved. In this case, the secondintermediate layer 222 may have a single layer or multilayer structure. The secondintermediate layer 222 may include an electron transport layer (ETL) and/or an electron injection layer (EIL). - Referring to
FIG. 6 , afirst opening 221′ and asecond opening 222′ may be respectively formed in the firstintermediate layer 221 and the secondintermediate layer 222 by removing respective portions of the firstintermediate layer 221 and the secondintermediate layer 222 corresponding theauxiliary electrode 210 a, and anopening portion 212 a′ may be formed in the secondconductive layer 212 a of theauxiliary electrode 210 a by removing a portion of theauxiliary electrode 210 a, thereby exposing at least a part of the firstconductive layer 211 a of theauxiliary electrode 210 a. Referring toFIG. 5 , theopening portion 212 a′ formed in the secondconductive layer 212 a, thefirst opening 221′ formed in the firstintermediate layer 221, and thesecond opening 222′ formed in the secondintermediate layer 222 may be simultaneously formed by radiating a laser beam onto a corresponding area of the secondintermediate layer 222. - For example, a laser beam having a power of about 45 mW or higher may be radiated by using a 355 nm UV laser beam to form the
opening portion 212 a′ in the secondconductive layer 212 a formed of ITO having a thickness of about 70 Å. - Referring to
FIG. 7A , anopposite electrode 230 is formed corresponding to thepixel electrode 210 and theauxiliary electrode 210 a and contacting the firstconductive layer 211 a of theauxiliary electrode 210 a through theopening portion 212 a′, thefirst opening 221′, and thesecond opening 222′ respectively formed in the secondconductive layer 212 a, the firstintermediate layer 221, and the secondintermediate layer 222. Theopposite electrode 230 is formed integrally with respect to the pixels, covering a display region (active region). The display region may refer to area of the whole organic light-emitting display apparatus from where light may be emitted, for example, an entire area of the organic light-emitting display apparatus except for edges of the organic light-emitting display apparatus in where a controller, etc. may be disposed. When the entire area of the organic light-emitting display apparatus does not include a dead are or a non-emitting area, the entire area of the organic light-emitting display apparatus may be referred to as the display region. - The
opposite electrode 230 may contact an electrode power supply line (not shown) disposed outside the display region and receive an electric signal from the electrode power supply line. Theopposite electrode 230 may be formed of a layer including at least one or Lithium (Li), Calcium (Ca), Lithium Fluoride/Calcium (LiF/Ca), Lithium Fluoride/Aluminum (LiF/Al), Aluminum (Al), Silver (Ag), Magnesium (Mg), and alloys thereof, and/or a conductive oxide including at least one of ITO, IZO, ZnO, and In2O3. However, the structure and material of theopposite electrode 230 are not limited thereto, and theopposite electrode 230 may be formed of other materials. Also, the layered structure may be a single-layer structure or a multilayer structure and may have a variety of modifications thereto without departing from the scope of the present invention. - According to the exemplary method of manufacturing an organic light-emitting display apparatus according to the exemplary embodiments, since an electric signal is transmitted through the
auxiliary electrode 210 a having a high electric conductivity, and theopposite electrode 230 contacts theauxiliary electrode 210 a, an IR drop, that may occur in theopposite electrode 230 when theauxiliary electrode 210 a is omitted, may be prevented or reduced. Accordingly, an unintended deviation in brightness in the pixels may be reduced or prevented. - In particular, the
auxiliary electrode 210 a includes the firstconductive layer 211 a and the secondconductive layer 212 a, and the resistance of the firstconductive layer 211 a disposed in a lower side of theauxiliary electrode 210 a is configured to be lower than the resistance of the secondconductive layer 212 a disposed in a upper side of theauxiliary electrode 210 a. Thus, by disposing theopposite electrode 230 to directly contact the firstconductive layer 211 a having a relatively lower resistance, the IR drop in theopposite electrode 230 may be reduced or prevented. - For example, the first
conductive layer 211 a may be formed of Ag, the secondconductive layer 212 a may be formed of ITO, and theopposite electrode 230 may be formed of Mg and Ag. In such a case, if theopposite electrode 230 is disposed to directly contact the secondconductive layer 212 a, a contact resistance may be about 170Ω. However, if theopposite electrode 230 is disposed to directly contact the firstconductive layer 211 a, the contact resistance may be reduced to about 60Ω. - Referring to
FIG. 7A , to directly contact theopposite electrode 230 and the firstconductive layer 211 a of theauxiliary electrode 210 a, at least a part of the firstconductive layer 211 a may be not covered by the secondconductive layer 212 a, the firstintermediate layer 221, and the secondintermediate layer 222. Accordingly, the secondconductive layer 212 a, the firstintermediate layer 221, and the secondintermediate layer 222 may be formed so that the secondconductive layer 212 a, the firstintermediate layer 221, and the secondintermediate layer 222 are not disposed on at least a part of the firstconductive layer 211 a. In this case, however, a mask may be used for forming the secondconductive layer 212 a, the firstintermediate layer 221, and the secondintermediate layer 222. Accordingly, a manufacturing process may be complicated, for example, to accurately align the mask and thesubstrate 100 with each other. - According to the exemplary method of manufacturing an organic light-emitting display apparatus according to the exemplary embodiments, the second
conductive layer 212 a may be formed in the same shape as the firstconductive layer 211 a, the firstintermediate layer 221 and the secondintermediate layer 222 may be formed, for example, on an entire surface of thesubstrate 100, and the secondconductive layer 212 a, the firstintermediate layer 221, and the secondintermediate layer 222 corresponding to at least a part of the firstconductive layer 211 a may be selectively removed using a laser beam, and thus, manufacturing efficiency may be improved. -
FIGS. 7A and 7B are cross-sectional views of an organic light-emitting display apparatus, according to one or more exemplary embodiments. AlthoughFIGS. 6 and 7A illustrate that the sizes of thefirst opening 221′ of the firstintermediate layer 221, thesecond opening 222′ of the secondintermediate layer 222, and theopening portion 212 a′ of the secondconductive layer 212 a of theauxiliary electrode 210 a are the same, the sizes thereof may be formed different from one another. Referring toFIG. 7B which shows a modified embodiment corresponding to portion B ofFIG. 7A , since the laser beam is radiated directly onto the secondintermediate layer 222, thesecond opening 222′ of the secondintermediate layer 222 may be formed to have a size larger than that of thefirst opening 221′ of the firstintermediate layer 221. Thefirst opening 221′ of the firstintermediate layer 221 may be formed to have a size larger than that of theopening portion 212 a′ of the secondconductive layer 212 a. Thefirst opening 221′ of the firstintermediate layer 221, thesecond opening 222′ of the secondintermediate layer 222, and theopening portion 212 a′ of the secondconductive layer 212 a of theauxiliary electrode 210 a may have circular shapes. In this case, the above-described sizes may refer to respective radii of thefirst opening 221′ of the firstintermediate layer 221, thesecond opening 222′ of the secondintermediate layer 222, and theopening portion 212 a′ of the secondconductive layer 212 a of theauxiliary electrode 210 a. - If the second
intermediate layer 222 is omitted as described above, thefirst opening 221′ and theopening portion 212 a′ may be formed by radiating the laser beam directly onto the firstintermediate layer 221 to remove at least a part of the firstintermediate layer 221 and the secondconductive layer 212 a disposed on the firstconductive layer 211 a, and thus, at least a part of the firstconductive layer 211 a may be exposed. Theopposite electrode 230 formed corresponding to thepixel electrode 210 and theauxiliary electrode 210 a may directly contact the firstconductive layer 211 a through thefirst opening 221′ of the firstintermediate layer 221 and theopening portion 212 a′ of the secondconductive layer 212 a. - When the
opening portion 212 a′, thefirst opening 221′ and/or thesecond opening 222′ are formed, as illustrated inFIGS. 7A and 7B , only a part of the firstconductive layer 211 a may be exposed. For example, in the display region of the organic light-emitting display apparatus, thefirst openings 221′, thesecond openings 222′ and/or the openingportions 212 a′, which are approximately circular, may be formed, and a plurality of parts of theopposite electrode 230 may directly contact the firstconductive layer 211 a. - The first
intermediate layer 221 and theemission layer 223 may be relatively weak to external impurities, such as moisture. Accordingly, when the firstintermediate layer 221 and theemission layer 223 are formed without the secondintermediate layer 222, removing a part of the firstintermediate layer 221 by radiating the laser beam may damage the firstintermediate layer 221 and theemission layer 223 along the above process. Accordingly, the secondintermediate layer 222 may be disposed, and thefirst opening 221′ and thesecond opening 222′ may be simultaneously formed by radiating the laser beam. In particular, the secondintermediate layer 222 including at least one of LiF and 8-Hydroxyquinolinolatolithium (Liq) may improve the ohmic contact of theopposite electrode 230. In addition, the secondintermediate layer 222 including at least one of LiF and Liq may improve the weakness to the external impurities, and thus, damage of the firstintermediate layer 221, theemission layer 223, and the secondintermediate layer 222 during the process of forming thefirst opening 221′, thesecond opening 222′, and theopening portion 212 a′ by radiating the laser beam thereon may be reduced or prevented. - According to the above description, during formation of the
opening portion 212 a′, thefirst opening 221′, and/or thesecond opening 222′, the secondconductive layer 212 a, the firstintermediate layer 221, and/or the secondintermediate layer 222 may be partially removed by radiating the laser beam. During this process, at least a part of an upper surface of the firstconductive layer 211 a may be removed as well, as shown inFIG. 7B . In other words, a groove may be formed in the upper surface of the firstconductive layer 211 a corresponding to theopening portion 212 a′. Accordingly, the exemplary embodiments and modified examples may have a groove formed in the upper surface of the firstconductive layer 211 a. -
FIGS. 8, 9, 10, and 11 are cross-sectional views schematically illustrating processes of an exemplary method of manufacturing an organic light-emitting display apparatus, according to one or more exemplary embodiments. Elements of the organic light-emitting display apparatus according to the one or more exemplary embodiments that are substantially the same with the organic light-emitting display apparatus illustrated inFIGS. 1, 2, 3, 4, 5, 6, 7A . and 7B may have be indicated with same number and the detailed description of the substantially same elements may be omitted. - According to the exemplary method of manufacturing an organic light-emitting display apparatus according to the exemplary embodiments, as described above with reference to
FIGS. 1, 2, 3, and 4 , the secondintermediate layer 222 is formed and, as illustrated inFIG. 8 , an auxiliaryopposite electrode 231 may be formed corresponding to thepixel electrode 210 and theauxiliary electrode 210 a. In other words, the auxiliaryopposite electrode 231 is formed to cover the secondintermediate layer 222. If the secondintermediate layer 222 is omitted, the auxiliaryopposite electrode 231 may be formed to cover the firstintermediate layer 221 and theemission layer 223. The above-described material for theopposite electrode 230, for example, may be used as a material for the auxiliaryopposite electrode 231. - Referring to
FIG. 9 , a laser beam is radiated onto at least a part of the auxiliaryopposite electrode 231, and thus, thefirst opening 221′ in the firstintermediate layer 221, thesecond opening 222′ in the secondintermediate layer 222, athird opening 231′ in the auxiliaryopposite electrode 231, and theopening portion 212 a′ in the secondconductive layer 212 a, may be simultaneously formed, as illustrated inFIG. 10 . If the secondintermediate layer 222 is omitted, thefirst opening 221′ of the firstintermediate layer 221, thethird opening 231′ of the auxiliaryopposite electrode 231, and theopening portion 212 a′ of the secondconductive layer 212 a may be simultaneously formed by radiating the laser beam onto at least a part of the auxiliaryopposite electrode 231. - Referring to
FIG. 11 , theopposite electrode 230 is formed corresponding to thepixel electrode 210 and theauxiliary electrode 210 a and contacting thefirst electrode layer 211 a through thefirst opening 221′, thesecond opening 222′, thethird opening 231′, and theopening portion 212 a′ respectively formed in the firstintermediate layer 221, the secondintermediate layer 222, the auxiliaryopposite electrode 231, and the secondconductive layer 212 a. Theopposite electrode 230 may be formed integrally with respect to the pixels, covering the display region (active region). - According to the exemplary method of manufacturing an organic light-emitting display apparatus according to the exemplary embodiments, since the
auxiliary electrode 210 a is formed and theopposite electrode 230 is disposed to contact theauxiliary electrode 210 a, an electric signal is transferred through theauxiliary electrode 210 a having a high electric conductivity and thus, the IR drop, that may occur in theopposite electrode 230 when theauxiliary electrode 210 a is omitted, may be prevented or reduced. As a result, the unintended brightness deviation in the pixels may be reduced or prevented. - In particular, the
auxiliary electrode 210 a includes the firstconductive layer 211 a and the secondconductive layer 212 a, the resistance of the firstconductive layer 211 a disposed in the lower side of theauxiliary electrode 210 a is configured to be lower than the resistance of the secondconductive layer 212 a disposed in the upper side of theauxiliary electrode 210 a, theopposite electrode 230 directly contacts the firstconductive layer 211 a having a relatively lower resistance, and thus, the IR drop in theopposite electrode 230 may be reduced or prevented. - Also, the second
conductive layer 212 a may be formed to have the same shape of the firstconductive layer 211 a, the firstintermediate layer 221, and/or the secondintermediate layer 222 may be formed, for example, on the entire surface of thesubstrate 100. The secondconductive layer 212 a, the firstintermediate layer 221, and/or the secondintermediate layer 222 disposed corresponding to at least a part of the firstconductive layer 211 a may be selectively removed using the laser beam, to directly contact theopposite electrode 230 and the firstconductive layer 211 a. Accordingly, manufacturing efficiency may be improved. - According to the exemplary method of manufacturing an organic light-emitting display apparatus according to the exemplary embodiments, the laser beam may be radiated after disposing the auxiliary
opposite electrode 231 on the secondintermediate layer 222, or the firstintermediate layer 221 and theemission layer 223 if the secondintermediate layer 222 is omitted formed. Accordingly, the laser beam is radiated after the auxiliaryopposite electrode 231 is disposed on the firstintermediate layer 221, the secondintermediate layer 222, and/or theemission layer 223, which may be weak to the external impurities, damage to the firstintermediate layer 221, the secondintermediate layer 222, and/or theemission layer 223 may be reduced compared to radiating the laser beam onto the firstintermediate layer 221 and/or the secondintermediate layer 222 without disposing the auxiliaryopposite electrode 231, and thus, a manufacturing defect may be reduced. - According to the exemplary method of manufacturing an organic light-emitting display apparatus according to the exemplary embodiments, a part of the auxiliary
opposite electrode 231 may be removed by radiating the laser beam onto the auxiliaryopposite electrode 231. Accordingly, forming the auxiliaryopposite electrode 231 relatively thin may facilitate the above removing. On the other hand, if the light generated by theemission layer 223 is emitted to the outside through thesubstrate 100, theopposite electrode 230 may be formed relatively thick considering an electric conductivity, etc. As a result, theopposite electrode 230 may be formed thicker than the auxiliaryopposite electrode 231. - If the auxiliary
opposite electrode 231 and theopposite electrode 230 are formed of the same material, the auxiliaryopposite electrode 231 and theopposite electrode 230 may show any boundary therebetween in a final product according to a process condition. In this case, the auxiliaryopposite electrode 231 and theopposite electrode 230 may be collectively referred to as theopposite electrode 230. Referring toFIG. 12 , a thickness t2 of a part of theopposite electrode 230 corresponding to a center portion of thefirst opening 221′ may appear to be smaller than a thickness t1 of a part of theopposite electrode 230 corresponding to a center portion of thepixel electrode 210. This is because theopposite electrode 230 formed in the part on thepixel electrode 210 includes two layers of the auxiliaryopposite electrode 231 and theopposite electrode 230, and theopposite electrode 230 formed in the center portion of thefirst opening 221′ includes one layer of theopposite electrode 230. - Although the exemplary embodiments illustrate that the
auxiliary electrode 210 a is disposed in the same layer as thepixel electrode 210, the exemplary embodiments are not limited thereto. For example, theauxiliary electrode 210 a may be located at the same layer as the source electrode and/or drain electrode, which are electrodes of the TFT. In this case, theauxiliary electrode 210 a is covered with theplanarization layer 170. In this case, an opening may be formed in theplanarization layer 170 to expose at least a part of theauxiliary electrode 210 a. The opening may be formed simultaneously with a via hole, through which thepixel electrode 210 contacts the source electrode and/or drain electrode of the TFT. A portion of theauxiliary electrode 210 a that is not covered by theplanarization layer 170 may be exposed by thepixel definition layer 180 as well. The subsequent processes may be substantially the same as or similar to those described with reference toFIGS. 1 to 12 , except for the fact that theauxiliary electrode 210 a is disposed in different layers. - Although the exemplary embodiments above illustrates that the
auxiliary electrode 210 a has a dual layer structure including the firstconductive layer 211 a and the secondconductive layer 212 a, the exemplary embodiments are not limited thereto, and theauxiliary electrode 210 a may have a multilayer structure including three or more layers. For example, referring toFIG. 13 , theauxiliary electrode 210 a may include the firstconductive layer 211 a, the secondconductive layer 212 a disposed on the firstconductive layer 211 a and having resistance higher than that of the firstconductive layer 211 a, and a thirdconductive layer 213 a disposed under the firstconductive layer 211 a and having resistance higher than that of the firstconductive layer 211 a. The secondconductive layer 212 a and the thirdconductive layer 213 a may include the same material. For example, the firstconductive layer 211 a may include at least one of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and alloys thereof, and the secondconductive layer 212 a and the thirdconductive layer 213 a may include a light-transmissive conductive material including at least one of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), and aluminum zinc oxide (AZO). - When the
auxiliary electrode 210 a is located at the same layer as thepixel electrode 210, thepixel electrode 210 may have the same structure as that of theauxiliary electrode 210 a. Thepixel electrode 210 may include thefirst electrode layer 211 including the same material as that of the firstconductive layer 211 a of theauxiliary electrode 210 a, thesecond electrode layer 212 disposed on thefirst electrode layer 211 and including the same material as that of the secondconductive layer 212 a of theauxiliary electrode 210 a, athird electrode layer 213 disposed under thefirst electrode layer 211 and including the same material as that of the thirdconductive layer 213 a of theauxiliary electrode 210 a. For reference, each of theauxiliary electrode 210 a and thepixel electrode 210 may have a triple layer structure as above, so that thepixel electrode 210 may contact the source electrode and/or drain electrode of the TFT thereunder, forming an ohmic contact. In other words, thepixel electrode 210 may include thethird electrode layer 213, and thethird electrode layer 213 may directly contact the source electrode and/or drain electrode of the TFT, forming an ohmic contact. For reference, the source electrode and/or drain electrode may be formed of a variety of conductive materials and may have a triple layer structure of, for example, Al/Ti/Al. - In the above case, the
opening portion 212 a′ is formed in the secondconductive layer 212 a of theauxiliary electrode 210 a, and theopposite electrode 230 may directly contact the firstconductive layer 211 a of theauxiliary electrode 210 a through thefirst opening 221′ of the firstintermediate layer 221 and theopening portion 212 a′ of the secondconductive layer 212 a. If the secondintermediate layer 222 is disposed, theopposite electrode 230 may directly contact the firstconductive layer 211 a of theauxiliary electrode 210 a through thefirst opening 221′ of the firstintermediate layer 221, thesecond opening 222′ of the secondintermediate layer 222, and theopening portion 212 a′ of the secondconductive layer 212 a. If the auxiliaryopposite electrode 231 is disposed, theopposite electrode 230 may directly contact the firstconductive layer 211 a of theauxiliary electrode 210 a through thefirst opening 221′ of the firstintermediate layer 221, thesecond opening 222′ of the secondintermediate layer 222, thethird opening 231′ of the auxiliaryopposite electrode 231, and theopening portion 212 a′ of the secondconductive layer 212 a. - The exemplary embodiments are not limited to the above described exemplary methods for manufacturing an organic light-emitting display apparatus according to the exemplary embodiments. For example, the exemplary embodiments also include the organic light-emitting display apparatus manufactured by the above exemplary methods.
- For example, an organic light-emitting display apparatus according to one or more exemplary embodiments may have a configuration as illustrated in
FIG. 7A . - The organic light-emitting display apparatus according to the exemplary embodiments includes the
auxiliary electrode 210 a including the firstconductive layer 211 a and the secondconductive layer 212 a disposed on the firstconductive layer 211 a. The secondconductive layer 212 a has theopening portion 212 a′ that exposes the firstconductive layer 211 a. Also, the resistance of the secondconductive layer 212 a may be higher than that of the firstconductive layer 211 a. For example, the firstconductive layer 211 a may include at least one of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and alloys thereof, and the secondconductive layer 212 a may include a light-transmissive conductive material including at least one of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), and aluminum zinc oxide (AZO). - Referring to
FIGS. 1 and 7A , the organic light-emitting display apparatus according to the exemplary embodiments includes thepixel electrode 210 in addition to theauxiliary electrode 210 a. In detail, the organic light-emitting display apparatus according to the exemplary embodiments may include thepixel electrode 210 that is disposed on the same layer as theauxiliary electrode 210 a, separated and electrically insulated from theauxiliary electrode 210 a. AlthoughFIG. 1 illustrates that thepixel electrode 210 and theauxiliary electrode 210 a are disposed on theplanarization layer 170, the exemplary embodiments are not limited thereto. Thus, thepixel electrode 210 and theauxiliary electrode 210 a disposed on the same layer may have the same structure. In other words, thepixel electrode 210 may include thefirst electrode layer 211 including substantially the same material as that of the firstconductive layer 211 a of theauxiliary electrode 210 a, and thesecond electrode layer 212 disposed on thefirst electrode layer 211, including substantially the same material as that of the secondconductive layer 212 a of theauxiliary electrode 210 a. - The organic light-emitting display apparatus may include the
pixel definition layer 180, and at least a part of thepixel electrode 210 and at least a part of the firstconductive layer 211 a of theauxiliary electrode 210 a may be exposed, and theopposite electrode 230 disposed corresponding to thepixel electrode 210 and theauxiliary electrode 210 a and directly contacting the firstconductive layer 211 a of theauxiliary electrode 210 a. - The organic light-emitting display apparatus according to the exemplary embodiments may include the first
intermediate layer 221 and the secondintermediate layer 222. The firstintermediate layer 221 and the secondintermediate layer 222 are disposed on thepixel definition layer 180, thepixel electrode 210, and theauxiliary electrode 210 a. Theemission layer 223 may be interposed between the firstintermediate layer 221 and the secondintermediate layer 222 corresponding to thepixel electrode 210. To directly contact the firstconductive layer 211 a of theauxiliary electrode 210 a and theopposite electrode 230, the firstintermediate layer 221 and the secondintermediate layer 222 may have thefirst opening 221′ and thesecond opening 222′ corresponding to theopening portion 212 a′ of the secondconductive layer 212 a of theauxiliary electrode 210 a. The secondintermediate layer 222 may be omitted. - The organic light-emitting display apparatus according to the exemplary embodiments includes the
auxiliary electrode 210 a and theopposite electrode 230 directly contacts theauxiliary electrode 210 a, so the electric signal may be transmitted through theauxiliary electrode 210 a having a high electric conductivity, and thus, the IR drop, that may occur in theopposite electrode 230 when theauxiliary electrode 210 a does not exist, may be prevented or reduced. Accordingly, the unintended brightness deviation in a plurality of pixels may be reduced or prevented. - In particular, the
auxiliary electrode 210 a includes the firstconductive layer 211 a and the secondconductive layer 212 a, and the resistance of the firstconductive layer 211 a disposed in the lower side of theauxiliary electrode 210 a is lower than that of the secondconductive layer 212 a disposed in the higher side of theauxiliary electrode 210 a. Theopposite electrode 230 directly contacts the firstconductive layer 211 a having a lower resistance, and thus the IR drop in theopposite electrode 230 may be prevented or reduced. - As described above, to directly contact the
opposite electrode 230 and the firstconductive layer 211 a, the secondconductive layer 212 a, the firstintermediate layer 221, and/or the secondintermediate layer 222, may respectively include theopening portion 212 a′, thefirst opening 221′, and/or thesecond opening 222′ formed in respective portions corresponding with the firstconductive layer 211 a to expose at least a part of the firstconductive layer 211 a. A manufacturing yield may be increased by forming the above openings by forming the secondconductive layer 212 a having substantially the same pattern as that of the firstconductive layer 211 a, forming the firstintermediate layer 221 and/or the secondintermediate layer 222 on the entire surface of thesubstrate 100, and radiating a laser beam onto a predetermined portion to remove at least parts of the secondconductive layer 212 a, the firstintermediate layer 221, and/or the secondintermediate layer 222 corresponding with the firstconductive layer 211 a. Accordingly, in the organic light-emitting display apparatus according to the exemplary embodiments, a part of the firstintermediate layer 221 and the secondintermediate layer 222 respectively adjacent to thefirst opening 221′ and thesecond opening 222′ may be deteriorated or degraded from exposure to heat. - Although
FIG. 7A illustrates that the sizes of thefirst opening 221′ of the firstintermediate layer 221, thesecond opening 222′ of the secondintermediate layer 222, and theopening portion 212 a′ of the secondconductive layer 212 a of theauxiliary electrode 210 a are identical to one another, this is merely for convenience of explanation and the sizes of the openings may be formed different from one another. For example, as illustrated inFIG. 7B , since the laser beam is directly radiated onto the secondintermediate layer 222, thesecond opening 222′ of the secondintermediate layer 222 may be formed to have a size larger than that of thefirst opening 221′ of the firstintermediate layer 221. Thefirst opening 221′ of the firstintermediate layer 221 may be formed to have a size larger than that of theopening portion 212 a′ of the secondconductive layer 212 a. Each of thefirst opening 221′ of the firstintermediate layer 221, thesecond opening 222′ of the secondintermediate layer 222, and theopening portion 212 a′ of the secondconductive layer 212 a of theauxiliary electrode 210 a may have a circular shape. In this case, the above-described sizes may refer to respective radii of thefirst opening 221′ of the firstintermediate layer 221, thesecond opening 222′ of the secondintermediate layer 222, and theopening portion 212 a′ of the secondconductive layer 212 a of theauxiliary electrode 210 a. Since thefirst opening 221′, thesecond opening 222′, and theopening portion 212 a′ are formed at the same time, the centers of the openings may be aligned with each other. - When the
first opening 221′, thesecond opening 222′, and/or theopening portion 212 a′ are formed, only a part of the firstconductive layer 211 a may be exposed as illustrated inFIG. 7A . For example, by forming a plurality of thefirst openings 221′, thesecond openings 222′, and/or the openingportions 212 a′, which are approximately circular, in the display region of the organic light-emitting display apparatus, a plurality of portions of theopposite electrode 230 may directly contact the firstconductive layer 211 a. - As described above, during the formation of the
opening portion 212 a′, thefirst opening 221′, and/or thesecond opening 222′, respectively, the secondconductive layer 212 a, the firstintermediate layer 221, and/or the secondintermediate layer 222 may be partially removed by radiating the laser beam, at least a part of the upper surface of the firstconductive layer 211 a may be removed as well in the process. In other words, a groove may be formed in the upper surface of the firstconductive layer 211 a corresponding to theopening portion 212 a′. Accordingly, the exemplary embodiments and modified examples may have a groove formed in the upper surface of the firstconductive layer 211 a, as shown inFIG. 7B . - The first
intermediate layer 221 and theemission layer 223 may be relatively weak to the external impurities, such as moisture. Accordingly, when the firstintermediate layer 221 and theemission layer 223 are formed without the secondintermediate layer 222, removing a part of the firstintermediate layer 221 by radiating the laser beam may damage the firstintermediate layer 221 and theemission layer 223 along the above process. Accordingly, the secondintermediate layer 222 may be disposed, and thefirst opening 221′ and thesecond opening 222′ are simultaneously formed by radiating the laser beam. In particular, the secondintermediate layer 222 including at least one of LiF and Liq may improve the ohmic contact of theopposite electrode 230. In addition, the secondintermediate layer 222 including at least any one of LiF and Liq may improve the weakness to the foreign impurities. Thus, the damage to the firstintermediate layer 221, theemission layer 223, and the secondintermediate layer 222 during the process of forming thefirst opening 221′, thesecond opening 222′, and theopening portion 212 a′ by radiating the laser beam thereon may be reduced or prevented. - An organic light-emitting display apparatus according to one or more exemplary embodiments may have a configuration as illustrated in
FIG. 11 . In other words, the auxiliaryopposite electrode 231 may be further interposed between theopposite electrode 230 and the firstintermediate layer 221 to contact theopposite electrode 230, having thethird opening 231′ corresponding to thefirst opening 221′ of the firstintermediate layer 221. In other words, the auxiliaryopposite electrode 231 may be disposed correspond to theopposite electrode 230 except in a portion of the auxiliaryopposite electrode 231 that overlaps with thefirst opening 221′ of the firstintermediate layer 221. - The organic light-emitting display apparatus according to the exemplary embodiments may prevent or reduce the IR drop of the
opposite electrode 230 by providing theauxiliary electrode 210 a. In addition, the auxiliaryopposite electrode 231 may protect the firstintermediate layer 221, theemission layer 223, and/or the secondintermediate layer 222 during forming theopening portion 212 a′ of the secondconductive layer 212 a, thefirst opening 221′ of the firstintermediate layer 221, and/or thesecond opening 222′ of the secondintermediate layer 222 are formed, and thus, damages to the firstintermediate layer 221, theemission layer 223, and/or the secondintermediate layer 222 may be reduced or prevented. The thickness of the auxiliaryopposite electrode 231 may be smaller than that of theopposite electrode 230. - Referring to
FIG. 12 , the auxiliaryopposite electrode 231 and theopposite electrode 230 may be integrally formed. In this case, the thickness t2 of the part of theopposite electrode 230 corresponding to the center portion of thefirst opening 221′ may be smaller than the thickness t1 of the part of theopposite electrode 230 corresponding to a center portion of thepixel electrode 210. This is because theopposite electrode 230 formed in the part on thepixel electrode 210 includes two layers of the auxiliaryopposite electrode 231 and theopposite electrode 230, and theopposite electrode 230 is formed in the center portion of thefirst opening 221′ includes one layer of theopposite electrode 230. - Although the exemplary embodiments illustrate that the
auxiliary electrode 210 a is disposed in the same layer as thepixel electrode 210, the exemplary embodiments are not limited thereto. For example, theauxiliary electrode 210 a may be located at the same layer as the source electrode and/or drain electrode, which are electrodes of the TFT. In this case, theauxiliary electrode 210 a is covered with theplanarization layer 170. In this case, an opening may be formed in theplanarization layer 170 to expose at least a part of theauxiliary electrode 210 a. The opening may be formed simultaneously with a via hole, through which thepixel electrode 210 contacts the source electrode and/or drain electrode of the TFT. A portion of theauxiliary electrode 210 a that is not covered by theplanarization layer 170 may be exposed by thepixel definition layer 180 as well. The subsequent processes may be substantially the same as or similar to those described with reference toFIGS. 1 to 12 , except for the fact that theauxiliary electrode 210 a is disposed in different layers. - Although the exemplary embodiments above illustrated that the
auxiliary electrode 210 a has a dual layer structure including the firstconductive layer 211 a and the secondconductive layer 212 a, the exemplary embodiments are not limited thereto, and theauxiliary electrode 210 a may have a multilayer structure including three or more layers. For example, referring toFIG. 13 , theauxiliary electrode 210 a may include the firstconductive layer 211 a, the secondconductive layer 212 a disposed on the firstconductive layer 211 a and having resistance higher than that of the firstconductive layer 211 a, and the thirdconductive layer 213 a disposed under the firstconductive layer 211 a and having resistance higher than that of the firstconductive layer 211 a. The secondconductive layer 212 a and the thirdconductive layer 213 a may include the same material. For example, the firstconductive layer 211 a may include at least one of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, and alloys thereof, and the secondconductive layer 212 a and the thirdconductive layer 213 a may include a light-transmissive conductive material including at least one of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), and aluminum zinc oxide (AZO). - When the
auxiliary electrode 210 a is located at the same layer as thepixel electrode 210, thepixel electrode 210 may have the same structure as that of theauxiliary electrode 210 a. Thepixel electrode 210 may include thefirst electrode layer 211 including the same material as that of the firstconductive layer 211 a of theauxiliary electrode 210 a, thesecond electrode layer 212 disposed on thefirst electrode layer 211 and including the same material as that of the secondconductive layer 212 a of theauxiliary electrode 210 a, thethird electrode layer 213 disposed under thefirst electrode layer 211 and including the same material as that of the thirdconductive layer 213 a of theauxiliary electrode 210 a. - In the above case, the
opening portion 212 a′ is formed in the secondconductive layer 212 a of theauxiliary electrode 210 a, and theopposite electrode 230 may directly contact the firstconductive layer 211 a of theauxiliary electrode 210 a through thefirst opening 221′ of the firstintermediate layer 221 and theopening portion 212 a′ of the secondconductive layer 212 a. If the secondintermediate layer 222 is disposed, theopposite electrode 230 may directly contact the firstconductive layer 211 a of theauxiliary electrode 210 a through thefirst opening 221′ of the firstintermediate layer 221, thesecond opening 222′ of the secondintermediate layer 222, and theopening portion 212 a′ of the secondconductive layer 212 a. If the auxiliaryopposite electrode 231 is disposed, theopposite electrode 230 may directly contact the firstconductive layer 211 a of theauxiliary electrode 210 a through thefirst opening 221′ of the firstintermediate layer 221, thesecond opening 222′ of the secondintermediate layer 222, thethird opening 231′ of the auxiliaryopposite electrode 231, and theopening portion 212 a′ of the secondconductive layer 212 a. - According to the one or more exemplary embodiments, a method of manufacturing of the organic light-emitting display apparatus may be simplified and have relatively high light-emitting stability. However, the exemplary embodiments are not necessarily limited to the above effects.
- Although certain exemplary embodiments and implementations have been described herein, other embodiments and modifications will be apparent from this description. Accordingly, the inventive concept is not limited to such embodiments, but rather to the broader scope of the presented claims and various obvious modifications and equivalent arrangements.
Claims (1)
1. A method of manufacturing an organic light-emitting display apparatus, the method comprising:
forming an auxiliary electrode comprising:
a first conductive layer; and
a second conductive layer disposed on the first conductive layer, the second conductive layer having a resistance higher than a resistance of the first conductive layer;
forming a pixel electrode, the pixel electrode being electrically insulated from the auxiliary electrode;
forming a first intermediate layer on the pixel electrode and the auxiliary electrode, the first intermediate layer comprising an organic material;
forming an emission layer corresponding to the pixel electrode on the first intermediate layer, wherein the first intermediate layer is interposed between the pixel electrode and the emission layer;
exposing the first conductive layer by forming a first opening in the first intermediate layer and an opening portion in the second conductive layer by removing a portion of the first intermediate layer and a portion of the second conductive layer of the auxiliary electrode; and
forming an opposite electrode on the first intermediate layer and the first conductive layer, wherein the opposite electrode is disposed contacting the first conductive layer exposed through the first opening of the first intermediate layer and the opening portion of the second conductive layer,
wherein a width of the first opening in the first intermediate layer is larger than a width of the opening portion in the second conductive layer.
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KR102465826B1 (en) | 2015-10-29 | 2022-11-09 | 엘지디스플레이 주식회사 | Organic light emitting display device and method of manufacturing the same |
KR101795579B1 (en) * | 2015-11-10 | 2017-11-08 | 엘지디스플레이 주식회사 | Organic light emitting display device and method of manufacturing the same |
KR102581258B1 (en) * | 2016-06-10 | 2023-09-22 | 삼성디스플레이 주식회사 | Organic light emitting display device and method for manufacturing the same |
JP2018116829A (en) * | 2017-01-18 | 2018-07-26 | 株式会社ジャパンディスプレイ | Display device |
KR102370355B1 (en) * | 2017-03-09 | 2022-03-07 | 삼성디스플레이 주식회사 | Organic light emitting display device |
TWI636602B (en) * | 2017-03-21 | 2018-09-21 | 機光科技股份有限公司 | Organic optoelectronic device structure and manufacturing method |
CN109216578B (en) * | 2017-06-30 | 2020-12-22 | 京东方科技集团股份有限公司 | Electroluminescent diode array substrate, preparation method thereof and display panel |
CN109411505B (en) | 2017-08-17 | 2020-11-17 | 京东方科技集团股份有限公司 | Display substrate and manufacturing method thereof, display device and driving method thereof |
CN107331691B (en) * | 2017-08-24 | 2020-07-03 | 京东方科技集团股份有限公司 | Array substrate, preparation method thereof and display panel |
KR102353802B1 (en) * | 2017-08-31 | 2022-01-19 | 엘지디스플레이 주식회사 | Electroluminescent Display Device |
KR102382487B1 (en) * | 2017-09-15 | 2022-04-01 | 엘지디스플레이 주식회사 | Organic light emitting display device |
KR20190058758A (en) * | 2017-11-21 | 2019-05-30 | 삼성디스플레이 주식회사 | Etchant and manufacturing method of display device using the same |
KR102451538B1 (en) * | 2017-12-05 | 2022-10-07 | 삼성디스플레이 주식회사 | Display panel and manufacturing method thereof |
KR102577233B1 (en) | 2017-12-28 | 2023-09-08 | 엘지디스플레이 주식회사 | Electroluminescent Display Device |
CN109004005B (en) * | 2018-07-24 | 2020-12-11 | 云谷(固安)科技有限公司 | Display panel, manufacturing method thereof and display device |
CN109037481B (en) * | 2018-08-01 | 2022-05-31 | 京东方科技集团股份有限公司 | Organic light-emitting display cover plate, manufacturing method, display panel and display device |
CN109638038B (en) * | 2018-11-15 | 2021-04-02 | 武汉华星光电半导体显示技术有限公司 | Active array organic light emitting diode display module |
KR102631177B1 (en) * | 2018-12-28 | 2024-01-29 | 엘지디스플레이 주식회사 | Electroluminance Lighting Device |
KR20200113056A (en) | 2019-03-20 | 2020-10-06 | 삼성디스플레이 주식회사 | Display apparatus and manufacturing the same |
KR20200131397A (en) * | 2019-05-13 | 2020-11-24 | 삼성디스플레이 주식회사 | Display apparatus |
CN110165079B (en) * | 2019-05-29 | 2020-08-25 | 昆山国显光电有限公司 | Display panel, manufacturing method thereof and display device |
CN110112205B (en) * | 2019-06-18 | 2021-04-09 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and organic light emitting diode display device |
CN110277431A (en) * | 2019-06-26 | 2019-09-24 | 云谷(固安)科技有限公司 | A kind of display panel and display device |
KR20210079615A (en) * | 2019-12-20 | 2021-06-30 | 엘지디스플레이 주식회사 | Display device and manufacturing method thereof |
JPWO2022157595A1 (en) * | 2021-01-22 | 2022-07-28 | ||
KR20220115755A (en) * | 2021-02-10 | 2022-08-18 | 삼성디스플레이 주식회사 | Display device |
CN113013362B (en) * | 2021-02-26 | 2023-04-18 | 云谷(固安)科技有限公司 | Display panel, preparation method of display panel and display device |
KR20230100956A (en) | 2021-12-29 | 2023-07-06 | 엘지디스플레이 주식회사 | Display device and manufacturing method thereof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10978540B2 (en) * | 2014-12-02 | 2021-04-13 | Samsung Display Co., Ltd. | Method of manufacturing organic light-emitting display apparatus including multilayer auxiliary electrode |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100606444B1 (en) | 1999-04-08 | 2006-07-31 | 엘지.필립스 엘시디 주식회사 | Method for fabricating an eld |
US7247986B2 (en) | 2003-06-10 | 2007-07-24 | Samsung Sdi. Co., Ltd. | Organic electro luminescent display and method for fabricating the same |
KR100501313B1 (en) | 2003-06-10 | 2005-07-18 | 삼성에스디아이 주식회사 | Organic electro luminescence display and method for fabricating the same |
KR100552966B1 (en) | 2003-09-15 | 2006-02-15 | 삼성에스디아이 주식회사 | Top Emission OLED using Assistant Electrode to prevent IR drop and fabricating the same |
KR100736008B1 (en) * | 2004-06-07 | 2007-07-06 | 가시오게산키 가부시키가이샤 | Display device and method of manufacturing the same |
JP4449857B2 (en) * | 2005-08-17 | 2010-04-14 | ソニー株式会社 | Manufacturing method of display device |
CN102881713B (en) | 2006-06-19 | 2016-05-25 | 株式会社日本有机雷特显示器 | Luminous display unit and manufacture method thereof |
US7915816B2 (en) * | 2007-05-14 | 2011-03-29 | Sony Corporation | Organic electroluminescence display device comprising auxiliary wiring |
JP4655102B2 (en) * | 2008-04-11 | 2011-03-23 | ソニー株式会社 | Display element, manufacturing method thereof, and display device |
KR101415794B1 (en) * | 2008-06-12 | 2014-07-11 | 삼성디스플레이 주식회사 | Organic Light Emitting Display and fabrication method thereof |
JP5690280B2 (en) * | 2009-10-15 | 2015-03-25 | パナソニック株式会社 | Display panel device and manufacturing method thereof |
KR101309863B1 (en) * | 2009-12-14 | 2013-09-16 | 엘지디스플레이 주식회사 | Luminescence display and fabricating method thereof |
JP5585127B2 (en) * | 2010-03-08 | 2014-09-10 | 三菱電機株式会社 | Array substrate and liquid crystal display device |
KR20130046847A (en) * | 2011-10-28 | 2013-05-08 | 삼성디스플레이 주식회사 | Display substrate and method of repairing a display substrate |
KR101560272B1 (en) * | 2013-02-25 | 2015-10-15 | 삼성디스플레이 주식회사 | Organic light emitting display device and manufacturing method of the same |
KR102079251B1 (en) * | 2013-05-21 | 2020-04-08 | 삼성디스플레이 주식회사 | Organic light emitting display apparatus and method for manufacturing the same |
US9362345B2 (en) | 2013-05-31 | 2016-06-07 | Samsung Display Co., Ltd. | Organic light emitting display apparatus and method of manufacturing the same |
US9450039B2 (en) * | 2013-05-31 | 2016-09-20 | Samsung Display Co., Ltd. | Organic light emitting display apparatus and method of manufacturing the same |
KR20140146953A (en) * | 2013-06-18 | 2014-12-29 | 삼성디스플레이 주식회사 | Organic light emitting display apparatus |
KR20150009126A (en) * | 2013-07-15 | 2015-01-26 | 삼성디스플레이 주식회사 | Organic light emitting diode display and method for manufacturing the same |
JP6211873B2 (en) * | 2013-09-30 | 2017-10-11 | 株式会社ジャパンディスプレイ | Organic EL display device and method of manufacturing organic EL display device |
US9806279B2 (en) * | 2014-07-08 | 2017-10-31 | Lg Display Co., Ltd. | Organic light emitting display device comprising auxiliary electrode having void therein and manufacturing method thereof |
KR102246294B1 (en) * | 2014-08-04 | 2021-04-30 | 삼성디스플레이 주식회사 | organic light emitting display apparatus and manufacturing method thereof |
US9570471B2 (en) * | 2014-08-05 | 2017-02-14 | Lg Display Co., Ltd. | Organic light emitting display device and method of manufacturing the same |
KR20160030596A (en) * | 2014-09-10 | 2016-03-21 | 엘지디스플레이 주식회사 | Organic Light Emitting Display Device and Method for fabricating the same |
KR101640803B1 (en) * | 2014-09-26 | 2016-07-20 | 엘지디스플레이 주식회사 | Organic Light Emitting Diode Display Device and Method of Fabricating the Same |
KR102422960B1 (en) * | 2014-12-29 | 2022-07-21 | 삼성디스플레이 주식회사 | Organic light emitting diode display device and method of manufacturing the same |
KR102443645B1 (en) * | 2016-01-13 | 2022-09-15 | 삼성디스플레이 주식회사 | Organic light emitting diode display and manufacturing method thereof |
-
2014
- 2014-12-02 KR KR1020140170834A patent/KR102313362B1/en active IP Right Grant
-
2015
- 2015-07-07 US US14/793,302 patent/US9780158B2/en active Active
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-
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- 2021-01-28 US US17/160,968 patent/US20210151546A1/en not_active Abandoned
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10978540B2 (en) * | 2014-12-02 | 2021-04-13 | Samsung Display Co., Ltd. | Method of manufacturing organic light-emitting display apparatus including multilayer auxiliary electrode |
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