US20210119650A1 - Multiplexer with acoustic wave resonators - Google Patents
Multiplexer with acoustic wave resonators Download PDFInfo
- Publication number
- US20210119650A1 US20210119650A1 US17/138,012 US202017138012A US2021119650A1 US 20210119650 A1 US20210119650 A1 US 20210119650A1 US 202017138012 A US202017138012 A US 202017138012A US 2021119650 A1 US2021119650 A1 US 2021119650A1
- Authority
- US
- United States
- Prior art keywords
- acoustic wave
- multiplexer
- pass band
- filter
- filters
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 claims abstract description 160
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 238000004891 communication Methods 0.000 claims abstract description 28
- 238000001914 filtration Methods 0.000 claims abstract description 8
- 230000002776 aggregation Effects 0.000 claims description 41
- 238000004220 aggregation Methods 0.000 claims description 41
- 238000000034 method Methods 0.000 abstract description 12
- 230000000712 assembly Effects 0.000 abstract 1
- 238000000429 assembly Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 53
- 230000008901 benefit Effects 0.000 description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 230000005540 biological transmission Effects 0.000 description 14
- 238000003780 insertion Methods 0.000 description 11
- 230000037431 insertion Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 8
- 238000006731 degradation reaction Methods 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 7
- 230000004044 response Effects 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 5
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 3
- 229910020177 SiOF Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- OJCDKHXKHLJDOT-UHFFFAOYSA-N fluoro hypofluorite;silicon Chemical compound [Si].FOF OJCDKHXKHLJDOT-UHFFFAOYSA-N 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 210000000707 wrist Anatomy 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
- H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
- H04B1/0057—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using diplexing or multiplexing filters for selecting the desired band
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6406—Filters characterised by a particular frequency characteristic
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
Definitions
- Embodiments of this disclosure relate to multiplexers with filters that include acoustic wave resonators.
- Acoustic wave filters can be implemented in radio frequency electronic systems.
- filters in a radio frequency front end of a mobile phone can include acoustic wave filters.
- An acoustic wave filter can be a band pass filter.
- a plurality of acoustic wave filters can be arranged as a multiplexer.
- two acoustic wave filters can be arranged as a duplexer.
- An acoustic wave filter can include a plurality of acoustic wave resonators arranged to filter a radio frequency signal.
- Example acoustic wave filters include surface acoustic wave (SAW) filters and bulk acoustic wave (BAW) filters. Designing multiplexers with acoustic wave filters to meet performance specifications with low loss can be challenging.
- the multiplexer includes a first acoustic wave filter having a first pass band and a second acoustic wave filter coupled to the first acoustic wave filter at a common node.
- the first acoustic wave filter includes bulk acoustic wave resonators.
- the second acoustic wave filter having a second pass band with a frequency range above the first pass band.
- the second pass band is associated with a different frequency band than the first pass band.
- the second acoustic wave filter includes multilayer piezoelectric substrate surface acoustic wave resonators.
- the bulk acoustic wave resonators have spurious modes below the first pass band.
- the bulk acoustic wave resonators can have spurious modes below the first pass band, and the multilayer piezoelectric substrate surface acoustic wave resonators can have a gamma of at least 0.85 in the first pass band.
- Spurious modes of the bulk acoustic wave resonators can be outside of the second pass band.
- the bulk acoustic wave resonators can have a substantially constant gamma in the second pass band.
- the multilayer piezoelectric substrate surface acoustic wave resonators can have a gamma of at least 0.85 in the first pass band.
- the multiplexer can further include a third acoustic wave filter coupled to the common node and having a third pass band, in which the third pass band is between the first pass band and the second pass band.
- the third acoustic wave filter can be a bulk acoustic wave filter.
- the third acoustic wave filter can be a surface acoustic wave filter.
- the third acoustic wave filter can be a multilayer piezoelectric substrate surface acoustic wave filter.
- the third acoustic wave filter can be a temperature compensated substrate surface acoustic wave filter.
- the multiplexer can further include a third acoustic wave filter coupled to the common node and having a third pass band and a fourth acoustic wave filter coupled to the common node and having a fourth pass band.
- the third acoustic wave filter can include second bulk acoustic wave resonators.
- the fourth acoustic wave filter can include second multilayer piezoelectric surface acoustic wave resonators.
- the third pass band can be between the first pass band and the fourth pass band.
- the fourth pass band can be between the third pass band and the second pass band.
- the multiplexer can further include a third acoustic wave filter coupled to the common node and having a third pass band and a fourth acoustic wave filter coupled to the common node and having a fourth pass band.
- the first pass band and the third pass band can be associated with a first frequency band
- the second pass band and the fourth pass band can be associated with a second frequency band.
- the common node can be configured to receive a carrier aggregation signal including carriers associated with the first frequency band and the second frequency band.
- the multiplexer can further include two additional acoustic wave filters coupled to the common node, in which the first pass band being a lowest pass band of all acoustic wave filters of the multiplexer, and in which the second pass band being a highest pass band of all acoustic wave filters of the multiplexer.
- the multiplexer can further include four additional acoustic wave filters coupled to the common node, in which the first pass band is a lowest pass band of all acoustic wave filters of the multiplexer, and in which the second pass band being a highest pass band of all acoustic wave filters of the multiplexer.
- Another aspect of this disclosure is a wireless communication device that includes an antenna and a radio frequency front end including a multiplexer.
- the multiplexer can be any suitable multiplexer disclosed herein.
- the radio frequency front can include a frequency multiplexing circuit coupled between the common node of the multiplexer and the antenna.
- the wireless communication device can further include an antenna switch coupled between the common node of the multiplexer and the antenna.
- Another aspect of this disclosure is a packaged radio frequency module that includes a multiplexer, a multi-throw radio frequency switch coupled to the multiplexer, and a package enclosing the multiplexer and the multi-throw radio frequency switch.
- the multiplexer can include any suitable features of the multiplexers disclosed herein.
- the packaged radio frequency module can further include a power amplifier enclosed within the package, in which the power amplifier is configured to provide a radio frequency signal to the multiplexer.
- the packaged radio frequency module can further include a low noise amplifier enclosed within the package, in which the low noise amplifier is configured to receive a radio frequency signal to the multiplexer.
- an acoustic wave filter assembly that includes a bulk acoustic wave die on a substrate and a multilayer piezoelectric substrate die on the substrate.
- the bulk acoustic wave die includes bulk acoustic wave resonators arranged as a first filter having a first pass band.
- the multilayer piezoelectric substrate die includes multilayer piezoelectric substrate surface acoustic wave resonators arranged as a second filter having a second pass band.
- the second filter is coupled to the first filter at a common node.
- the second pass band is associated with a different frequency band than the first pass band.
- the substrate can be a laminate substrate.
- the acoustic wave filter assembly can further include a package enclosing the bulk acoustic wave die and the multilayer piezoelectric substrate die.
- the acoustic wave filter assembly can further include a surface acoustic wave die on the substrate, in which the surface acoustic wave die includes surface acoustic wave resonators arranged as a third filter coupled to the common node.
- the surface acoustic wave resonators can be temperature compensated surface acoustic wave resonators.
- the surface acoustic wave resonators can be second multilayer piezoelectric substrate surface acoustic wave resonators.
- the first filter and the second filter can be included in a multiplexer that includes one or more suitable features of the multiplexers disclosed herein.
- the multiplexer includes a first acoustic wave filter having a first pass band and a second acoustic wave filter coupled to the first acoustic wave filter at a common node.
- the first acoustic wave filter includes type II bulk acoustic wave resonators, in which the type II bulk acoustic wave resonators have spurious modes below the first pass band.
- the second acoustic wave filter have a second pass band with a frequency range above the first pass band.
- the second acoustic wave filter includes type I bulk acoustic wave resonators having spurious modes above the second pass band.
- the type I bulk acoustic wave resonators can have a gamma of at least 0.85 in the first pass band.
- the type II bulk acoustic wave resonators can have a substantially constant gamma in the second pass band.
- the multiplexer can further include a third acoustic wave filter coupled to the common node and having a third pass band, in which the third pass band is between the first pass band and the second pass band.
- the multiplexer can further include two additional acoustic wave filters coupled to the common node, in which the first pass band is a lowest pass band of all acoustic wave filters of the multiplexer.
- the multiplexer can support a carrier aggregation of two frequency bands.
- the multiplexer can further include four additional acoustic wave filters coupled to the common node, in which the first pass band is a lowest pass band of all acoustic wave filters of the multiplexer, and in which the second pass band is a highest pass band of all acoustic wave filters of the multiplexer.
- the multiplexer can support a carrier aggregation of three frequency bands.
- the multiplexer includes a first acoustic wave filter coupled to a common node and having a first pass band, the first acoustic wave filter including bulk acoustic wave resonators; a second acoustic wave filter coupled to the common node and having a second pass band; a third acoustic wave filter coupled to the common node and having a third pass band; and a fourth acoustic wave filter coupled to the common node and having a fourth pass band, the fourth acoustic wave filter including surface acoustic wave resonators, the first pass band being a lowest pass band of all acoustic wave filters of the multiplexer.
- the fourth pass band can be a highest pass band of all acoustic wave filters of the multiplexers.
- the surface acoustic wave resonators can include multilayer piezoelectric substrate surface acoustic wave resonators.
- the first acoustic wave filter and third acoustic wave filter can each include multilayer piezoelectric substrate surface acoustic wave resonators.
- the second acoustic wave filter, third acoustic wave filter, and the fourth acoustic wave filter can each include multilayer piezoelectric substrate surface acoustic wave resonators.
- the surface acoustic wave resonators can include temperature compensated surface acoustic wave resonators.
- the second acoustic wave filter can include second bulk acoustic wave resonators, the third acoustic wave filter can include second surface acoustic wave resonators, and the second pass band can be below the third pass band.
- the second acoustic wave filter can include second bulk acoustic wave resonators
- the third acoustic wave filter can include third bulk acoustic wave resonators
- the second pass band can be below the third pass band.
- the second acoustic wave filter can include second surface acoustic wave resonators
- the third acoustic wave filter can include third surface acoustic wave resonators
- the second pass band can be below the third pass band.
- the multiplexer is configured can support a carrier aggregation of two frequency bands.
- the multiplexer can further include: a fifth acoustic wave filter coupled to the common node and having a fifth pass band; and a sixth acoustic wave filter coupled to the common node and having a sixth pass band.
- the multiplexer can support a carrier aggregation of three frequency bands.
- the bulk acoustic wave resonators can have spurious modes below the first pass band.
- the surface acoustic wave resonators can have a gamma of at least 0.85 in the first pass band.
- the bulk acoustic wave resonators can have spurious modes below the first pass band, and the surface acoustic wave resonators have a gamma of at least 0.85 in the first pass band.
- Spurious modes of the bulk acoustic wave resonators can be outside of the fourth pass band.
- the bulk acoustic wave resonators can have a substantially constant gamma in the fourth pass band.
- FIG. 1A is a schematic block diagram of a duplexer according to an embodiment.
- FIG. 1B is a graph of transmission characteristics over frequency for filters of the duplexer of FIG. 1A .
- FIG. 2A is a schematic block diagram of a quadplexer according to an embodiment.
- FIG. 2B is a graph of transmission characteristics over frequency for filters of the quadplexer of FIG. 2A .
- FIG. 3A is a graph of transmission characteristics over frequency for filters of the quadplexer of FIG. 2A compared to standalone filters.
- FIG. 3B is a graph of gamma over frequency for the quadplexer of FIG. 2A with bulk acoustic wave (BAW) filters having pass bands below pass bands of a multilayer piezoelectric substrate (MPS) surface acoustic wave (SAW) filters.
- BAW bulk acoustic wave
- MPS multilayer piezoelectric substrate
- SAW surface acoustic wave
- FIG. 4A is a graph of transmission characteristics over frequency for a quadplexer compared to standalone filters.
- FIG. 4B is a graph of gamma over frequency for the quadplexer corresponding to FIG. 4A .
- FIG. 5A is a graph of transmission characteristics over frequency for a quadplexer compared to standalone filters.
- FIG. 5B is a graph of gamma over frequency for the quadplexer corresponding to FIG. 5A .
- FIG. 6A is a schematic block diagram of a duplexer according to an embodiment.
- FIG. 6B is a schematic block diagram of a duplexer according to another embodiment.
- FIG. 6C is a schematic block diagram of a duplexer according to another embodiment.
- FIG. 7A is a schematic block diagram of a quadplexer according to an embodiment.
- FIG. 7B is a schematic block diagram of a quadplexer according to another embodiment.
- FIG. 8 is a schematic block diagram of a quadplexer according to another embodiment.
- FIG. 9A is a schematic block diagram of a quadplexer according to another embodiment.
- FIG. 9B is a schematic block diagram of a quadplexer according to another embodiment.
- FIG. 9C is a schematic block diagram of a quadplexer according to another embodiment.
- FIG. 10A is a schematic block diagram of a multiplexer according to an embodiment.
- FIG. 10B is a schematic block diagram of a multiplexer according to another embodiment.
- FIG. 11A is a cross sectional view of an MPS SAW resonator according to an embodiment.
- FIG. 11B is a cross sectional view of a SAW resonator according to an embodiment.
- FIG. 11C is a cross sectional view of a temperature compensated SAW resonator according to an embodiment.
- FIG. 12 is a cross sectional view of a bulk acoustic wave resonator according to an embodiment.
- FIG. 13 is a schematic diagram of a ladder filter according to an embodiment.
- FIG. 14 is a schematic diagram of a radio frequency system that includes quadplexers coupled to an antenna by way of a diplexer.
- FIG. 15 is a schematic diagram of a radio frequency system that includes a quadplexer coupled to an antenna.
- FIG. 16 is a schematic diagram of a radio frequency system that includes an antenna coupled to receive paths by way of a multiplexer.
- FIG. 17A is a schematic diagram of a radio frequency system that includes multiplexers in signal paths between power amplifiers and an antenna.
- FIG. 17B is a schematic diagram of another radio frequency system that includes multiplexers in signal paths between power amplifiers and an antenna.
- FIG. 18A is a block diagram that illustrates different die that include acoustic wave resonators of filters of a multiplexer according to an embodiment.
- FIG. 18B is a block diagram that illustrates different die that include acoustic wave resonators of filters of a multiplexer according to an embodiment.
- FIG. 18C is a block diagram that illustrates different die that include acoustic wave resonators of filters of a multiplexer according to an embodiment.
- FIG. 19 is a schematic block diagram of a module that includes a power amplifier, a switch, and a multiplexer according to an embodiment.
- FIG. 20 is a schematic block diagram of a module that includes power amplifiers, switches, and a multiplexer according to an embodiment.
- FIG. 21A is a schematic block diagram of a wireless communication device that includes a multiplexer according to an embodiment.
- FIG. 21B is a schematic block diagram of a wireless communication device that includes a multiplexer according to an embodiment.
- SAW Surface acoustic wave
- BAW bulk acoustic wave
- Certain high performance BAW filters can outperform SAW filters in terms of out-of-band impedance magnitude over a wider frequency span.
- BAW filters can be suited to filter signals having frequencies up to about 10 gigahertz (GHz).
- BAW filters can achieve relatively low insertion loss and desirable rejection of adjacent frequency bands.
- SAW filters can be lower cost than BAW filters.
- SAW filters include, for example, multilayer piezoelectric substrate (MPS) SAW filters, temperature compensated SAW (TCSAW) filters, and non-temperature compensated SAW filters.
- MPS multilayer piezoelectric substrate
- TCSAW temperature compensated SAW
- SAW filters can encounter difficulty filtering signals at relatively high frequencies, such as frequencies above about 2.7 GHz, in certain applications. Given these differences in technology, SAW filters can be used for filtering relatively lower frequencies than BAW filters in a variety of applications and thereby save costs.
- Low loss multiplexer devices are desired for relatively complex radio frequency (RF) systems for mobile communication.
- a multiplexer can include band pass filters coupled together at a common node. Insertion loss of a filter in the multiplexer is typically degraded compared to standalone filters due to loading from other filters of the multiplexer.
- This disclosure provides low loss multiplexers that include a bulk acoustic wave (BAW) filter and a multilayer piezoelectric substrate (MPS) SAW filter.
- An MPS SAW filter can be referred to as an MPS filter.
- Other low loss multiplexers are disclosed.
- Low insertion loss can be difficult to achieve in a multiplexer that includes a plurality of filters. This can be due to loading.
- multiplexers with a BAW filter and an MPS SAW filter are disclosed. By setting the pass band of the BAW filter to a lower frequency than the pass band of the MPS SAW filter, loading can be reduced and/or almost eliminated.
- the BAW filter can achieve desirable gamma for higher frequencies and the MPS SAW filter can achieve desirable gamma for lower frequencies.
- Gamma is a reflection coefficient.
- a multiplexer with a BAW filter having the lowest pass band of all filters of the multiplexer and an MPS SAW filter having the highest pass band of all filters of the multiplexer can achieve low loading loss and low insertion loss for the multiplexer.
- Other types of SAW filters e.g., a temperature compensated SAW filter
- FIG. 1A is a schematic block diagram of a duplexer 10 according to an embodiment.
- the illustrated duplexer 10 includes a BAW filter 12 and an MPS filter 14 .
- the BAW filter 12 and the MPS filter 14 are band pass filters coupled together at a common node COM.
- the BAW filter 12 is coupled between a first RF node RF 1 and the common node COM.
- the BAW filter 12 includes BAW resonators.
- the BAW resonators can be film bulk acoustic wave resonators (FBARs). In some other applications, the BAW resonators can include solidly mounted resonators (SMRs).
- the MPS filter 14 is coupled between a second RF node RF 2 and the common node COM.
- the MPS filter 14 includes MPS SAW resonators.
- all acoustic wave resonators of the MPS filter 14 can be MPS SAW resonators.
- MPS SAW resonators can include layered substrate SAW resonators and/or bonded substrate SAW resonators.
- the BAW filter 12 and the MPS filter 14 can be associated with the same frequency band in certain instances, in which one filter is a transmit filter and the other filter is a receive filter.
- the BAW filter 12 and the MPS filter 14 can be associated with different frequency bands in some instances, such as in diversity receive applications and/or in any other suitable applications in which filtering of different bands in a duplexer is desired.
- the BAW filter 12 and the MPS filter 14 can be associated with different frequency sub-bands within the same frequency band in some instances.
- FIG. 1B is a graph of transmission characteristics over frequency for filters of the duplexer 10 of FIG. 1A .
- FIG. 1B illustrates a first pass band 16 of the BAW filter 12 and a second pass band of the MPS filter 14 .
- the second pass band 18 spans a frequency range above the first pass band 16 .
- the first pass band 16 spans a frequency range below the second pass band 18 .
- the BAW filter 12 can have the first pass band 16 and a first stop band above the first pass band 16 .
- the BAW filter 12 can include type II BAW resonators that have spurious modes below their respective resonant frequencies. Accordingly, spurious modes of the BAW filter 12 can be outside of the second pass band 18 of the MPS filter 14 .
- the MPS filter 14 can have the second pass band 18 and a second stop band below second pass band 18 . In the second stop band, the frequency response of the MPS filter 14 can be relatively clean.
- MPS SAW resonators of the MPS filter 14 can have spurious modes above their respective resonant frequencies. Accordingly, spurious modes of the MPS filter 14 can be outside of the first pass band 16 of the BAW filter 12 .
- the duplexer 10 can be a relatively loss low duplexer due to the spurious modes of the BAW filter 12 being outside of the second pass band 18 of the MPS filter 14 and the spurious modes of the MPS filter 14 being outside of the first pass band 16 of the BAW filter 12 .
- Multiplexers with more filters coupled to common node can have more significant technical challenges related to loading relative to multiplexers with fewer filters coupled to a common node. For example, loading can be a more significant technical challenge to address for quadplexers than for duplexers because more filters are coupled together at a common node that can contribute to loading in quadplexers. Accordingly, in quadplexers, there can be more other filters that can undesirably impact insertion loss in a pass band of a particular filter than in duplexers.
- FIG. 2A is a schematic block diagram of a quadplexer 20 according to an embodiment.
- the quadplexer 20 includes four acoustic wave filters coupled to a common node COM.
- the quadplexer 20 includes a first BAW filter 22 , a second BAW filter 24 , a first MPS filter 26 , and a second MPS filter 28 .
- the first BAW filter 22 is coupled between a first RF node RF 1 and the common node COM.
- the second BAW filter 24 is coupled between a second RF node RF 2 and the common node COM.
- the first BAW filter 22 and the second BAW filter 24 each include BAW resonators (e.g., FBARs and/or SMRs).
- the acoustic wave resonators of the first BAW filter 22 and the second BAW filter 24 consist of FBARs.
- the first MPS filter 26 is coupled between a third RF node RF 3 and the common node COM.
- the second MPS filter 28 is coupled between a fourth RF node RF 4 and the common node COM.
- the first MPS filter 26 and the second MPS filter 28 each include MPS SAW resonators.
- the quadplexer 20 can be similar to a first duplexer that includes BAW filters 22 and 24 for first frequency band and a second duplexer that includes MPS filters 26 and 28 for a second frequency band coupled together at the common node COM, in which the second frequency band is above the first frequency band.
- FIG. 2B is a graph of transmission characteristics over frequency for filters of the quadplexer 20 of FIG. 2A .
- FIG. 2B illustrates a first pass band 32 of the first BAW filter 22 , a second pass band 34 of the second BAW filter 24 , a third pass band 36 of the first MPS filter 26 , and a fourth pass band 38 of the second MPS filter 28 .
- the first pass band 32 of the first BAW filter 22 is lower than the pass bands of all other acoustic wave filters of the quadplexer 20 .
- the fourth pass band 38 of the second MPS filter 28 is higher than the pass bands of all other acoustic wave filters of the quadplexer 20 .
- the second pass band 34 of the second BAW filter 24 is below the third pass band 36 of the first MPS filter 34 . Accordingly, the pass bands of each BAW filter of the quadplexer 20 are below the pass bands of each MPS filter of the quadplexer 20 .
- the BAW filters 22 and 24 can have respective stop bands above their pass bands 32 and 34 .
- the BAW filters 22 and 24 can be formed of type II BAW resonators that have spurious modes below their respective resonant frequencies. Accordingly, spurious modes of the BAW filters 22 and 24 can be outside of the pass bands 36 and 38 of the MPS filters 26 and 28 , respectively.
- the MPS filters 26 and 28 can have respective stop bands below their pass bands 36 and 38 .
- the MPS filters 26 and 28 can be formed of MPS SAW resonators that have spurious modes above their respective resonant frequencies. Accordingly, spurious modes of the MPS filters 26 and 28 can be outside of the pass bands 32 and 34 of the BAW filters 22 and 24 , respectively.
- FIG. 3A is a graph of transmission characteristics over frequency for filters of the quadplexer 20 of FIG. 2A compared to standalone filters.
- BAW filters 22 and 24 have pass bands below pass bands of the MPS filters 26 and 28 .
- Insertion loss degradation can correspond to the reduction in transmission characteristics due to loading in the quadplexer 20 .
- the graph in FIG. 3A should illustrate the impact of loading in the quadplexer 20 by the difference between the transmission characteristics for a standalone filter and the transmission characteristics for the same filter in the quadplexer 20 .
- FIG. 3A indicates that insertion loss degradation for BAW filters 22 and 24 is relatively small.
- FIG. 3A indicates that insertion loss degradation is relatively small for the MPS filter 26 and 28 .
- FIG. 3B is a graph of gamma over frequency for the BAW filers 22 and 24 and the MPS filters 26 and 28 the quadplexer 20 of FIG. 2A in which the BAW filters 22 and 24 have lower pass bands than the MPS filters 26 and 28 .
- FIG. 3B illustrates that there is relatively high gamma for the BAW filters 22 and 24 above the pass bands of the BAW filters 22 and 24 .
- Relatively high gamma for the BAW filters 22 and 24 is indicated at for the respective pass bands of the MPS filters 26 and 28 .
- the BAW filters 22 and 24 can have gamma of at least 0.85 and/or at least 0.9 in the pass bands of the MPS filters 26 and 28 .
- a maximum value of gamma can be 1.
- a gamma of 1 can indicate 100% reflection.
- FIG. 3B illustrates that there is relatively high gamma for the MPS filters 26 and 28 below the pass bands of the MPS filters 26 and 28 . Relatively high gamma for the MPS filters 26 and 28 is indicated for the respective pass bands of the BAW filters 22 and 24 .
- the MPS filters 26 and 28 can have gamma of at least 0.85 and/or at least 0.9 in the pass bands of the BAW filters 22 and 24 . Accordingly, the quadplexer 20 of FIG. 2A with BAW filters 22 and 24 having lower pass bands than MPS filters 26 and 28 is a desirable combination for multiplexing.
- FIG. 4A is a graph of transmission characteristics over frequency for a quadplexer compared to standalone filters.
- the quadplexer corresponding to the graphs of FIGS. 4A and 4B includes two MPS filters and two BAW filters, in which the MPS filters have lower pass bands than the BAW filters.
- the graph of FIG. 4A indicates significant insertion loss degradation in pass bands of the MPS filters due to loading loss.
- FIG. 4B is a graph of gamma over frequency for a quadplexer with two MPS filters having pass bands below two BAW filters.
- the graph of FIG. 4B indicates that gamma for the BAW filters is degraded.
- the gamma degradation corresponds to pass bands of the MPS filters.
- FIG. 5A is a graph of transmission characteristics over frequency for a quadplexer compared to standalone filters.
- the quadplexer corresponding to the graphs of FIGS. 5A and 5B includes two MPS filters and two BAW filters, in which the MPS filters have significantly lower pass bands than the BAW filters.
- the graph of FIG. 5A indicates significant insertion loss degradation in a pass band of the BAW filter with a higher pass band.
- FIG. 5B is a graph of gamma over frequency for a quadplexer with two MPS filters having pass bands significantly below two BAW filters.
- the graph of FIG. 5B indicates that gamma for the MPS filters is degraded.
- the gamma degradation can be due to loading loss resulting from higher order spurious responses of the MPS filters.
- the gamma degradation corresponds to the pass band of the BAW filter with the higher pass band.
- a quadplexer can include (a) filters for a lower frequency band with spurious responses below the pass bands and (b) filters for a higher frequency band with relatively high gamma below the pass band.
- the filters for the lower frequency band can include a transmit filter and a receive filter.
- the filters for the lower frequency band can include a BAW filter.
- the filters for the higher frequency band can include a transmit filter and a receive filter.
- the filters for the higher frequency band can include one or more of an MPS filter, a SAW filter, a TCSAW filter, or a type I BAW filter.
- duplexer 10 of FIG. 1A and the quadplexer 20 of FIG. 2A include a BAW filter and an MPS filter
- the principles and advantages disclosed herein can be applied to other types of filters with certain characteristics of the filters of the duplexer 10 of FIG. 1A and the quadplexer 20 of FIG. 2A .
- a filter with a lowest pass band in a multiplexer can have spurious modes below its pass band.
- Such a filter can be a type II BAW filter.
- a filter with a highest pass band of a multiplexer can have relatively high gamma below its pass band.
- Such a filter can be an MPS filter, a SAW filter, a TCSAW filter, or a type I BAW filter.
- a multiplexer can include at least one acoustic wave filter with two or more different types of acoustic wave devices implemented with frequency domain characteristics of a filter of the duplexer 10 and/or a filter of the quadplexer 20 .
- FIGS. 6A to 6C illustrate duplexers with a BAW filter having a first pass band that is below a second pass band of another type of acoustic wave filter.
- the other acoustic wave filter can be associated with the same frequency band as the BAW filter (e.g., the filters can be for uplink and downlink signals of the same frequency band).
- the BAW filter and the other acoustic wave filter can have pass bands associated with different frequency bands.
- FIG. 6A is a schematic block diagram of a duplexer 60 according to an embodiment.
- the duplexer 60 includes a BAW filter 12 and a SAW filter 62 coupled to each other at a common node COM.
- the BAW filter 12 has a first pass band that is below a second pass band of the SAW filter 62 .
- the duplexer 60 is like the duplexer 10 of FIG. 1A , except that a SAW filter 62 is implemented in place of the MPS filter 14 .
- the SAW filter 62 includes SAW devices, such as SAW resonators.
- the SAW resonators can be any suitable SAW resonators, including without limitation TCSAW resonators, non-temperature compensated SAW resonators, or MPS SAW resonators.
- FIG. 6B is a schematic block diagram of a duplexer 63 according to an embodiment.
- the duplexer 63 includes a BAW filter 12 and a TCSAW filter 64 coupled to each other at a common node COM.
- the BAW filter 12 has a first pass band that is below a second pass band of the TCSAW filter 64 .
- the duplexer 63 is like the duplexer 10 of FIG. 1A , except that a TCSAW filter 64 is implemented in place of the MPS filter 14 .
- the TCSAW filter 64 includes TCSAW resonators.
- FIG. 6C is a schematic block diagram of a duplexer 65 according to an embodiment.
- the duplexer 65 includes a type II BAW filter 67 and a type I BAW filter 68 coupled to each other at a common node COM.
- the type II BAW filter 67 has a first pass band that is below a second pass band of the type I BAW filter 68 .
- the type II BAW filter 67 includes BAW resonators that have spurious modes below their resonant frequencies.
- the type I BAW filter 68 includes BAW resonators that have spurious modes above their resonant frequencies.
- FIGS. 7A and 7B illustrate quadplexers with a BAW filter having a lowest pass band of the filters of the quadplexer and an MPS filter having a highest pass band of the filters of the quadplexer.
- the filters with the middle pass bands of the quadplexers are implemented by different types of acoustic wave filters than the quadplexer 20 of FIG. 2A .
- FIG. 7A is a schematic block diagram of a quadplexer 70 according to an embodiment.
- the quadplexer 70 is like the quadplexer 20 of FIG. 2A except that the MPS filter 26 of the quadplexer 20 is replaced by the BAW filter 72 in the quadplexer 70 .
- FIG. 7B is a schematic block diagram of a quadplexer 73 according to another embodiment.
- the quadplexer 73 is like the quadplexer 20 of FIG. 2A except that the BAW filter 24 of the quadplexer 20 is replaced by the MPS filter 74 in the quadplexer 73 .
- FIG. 8 is a schematic block diagram of a quadplexer 80 according to another embodiment.
- the quadplexer 80 includes a BAW filter 22 , a first TCSAW filter 82 , a second TCSAW filter 84 , and an MPS filter 28 .
- the BAW filter 22 has a lowest pass band of the filters of the quadplexer 80 .
- the MPS filter 28 has a highest pass band of the filters of the quadplexer 80 .
- the filters with the middle pass bands of the quadplexer 80 are implemented by TCSAW resonators in the quadplexer 80 .
- the quadplexer 80 is an example of a quadplexer in which a different type of acoustic wave resonator implements filters with the middle two pass bands than filters with the highest and lowest pass bands.
- the quadplexer 80 is like the quadplexer 20 of FIG. 2A except that the BAW filter 24 of the quadplexer 20 and the MPS filter 26 are replaced by the TCSAW filter 82 and the TCSAW filter 84 , respectively, in the quadplexer 80 .
- FIGS. 9A to 9C illustrate quadplexers with a BAW filter having a lowest pass band of the filters of the quadplexer and a SAW filter having a highest pass band of the filters of the quadplexer.
- SAW filters can be implemented in combination with one or more BAW filters in a multiplexer in accordance with any suitable principles and advantages disclosed herein.
- the SAW filters can include without limitation one or more of TCSAW filters, non-temperature compensated SAW filters, or MPS filters.
- FIG. 9A is a schematic block diagram of a quadplexer 90 according to another embodiment.
- the quadplexer 90 includes a first BAW filter 22 , a second BAW filter 24 , a first SAW filter 92 , and a second SAW filter 94 coupled together at a common node COM.
- the first BAW filter 22 and the second BAW filter 24 each include BAW resonators (e.g., FBARs and/or SMRs).
- the acoustic wave resonators of the first BAW filter 22 and the second BAW filter 24 consist of FBARs.
- the first SAW filter 92 and the second SAW filter 94 include SAW resonators.
- the SAW resonators of the first SAW filter 92 and the second SAW filter 94 can include one or more TCSAW resonators, one or more non-temperature compensated SAW resonators, one or more MPS resonators, or any suitable combination thereof.
- the quadplexer 90 can be similar to a first duplexer that includes BAW filters 22 and 24 for first frequency band and a second duplexer that includes SAW filter 92 and 94 for a second frequency band coupled together at the common node COM, in which the second frequency band is above the first frequency band.
- the BAW filters 22 and 24 can have respective stop bands above their pass bands.
- the BAW filters 22 and 24 can be a type II BAW filters that have spurious modes below their respective resonant frequencies.
- the SAW filters 26 and 28 can have respective stop bands below their pass bands.
- the SAW filters 26 and 28 can have spurious modes above their respective resonant frequencies.
- FIG. 9B is a schematic block diagram of a quadplexer 95 according to another embodiment.
- the quadplexer 95 is like the quadplexer 90 of FIG. 9A except that SAW filter 96 is included in the quadplexer 95 in place of the BAW filter 24 of the quadplexer 90 .
- FIG. 9C is a schematic block diagram of a quadplexer 97 according to another embodiment.
- the quadplexer 97 is like the quadplexer 90 of FIG. 9A except that BAW filter 72 is included in the quadplexer 97 in place of the SAW filter 92 of the quadplexer 90 .
- any suitable the principles and advantages disclosed herein can be implement in a multiplexer that includes a plurality of filters coupled together at a common node.
- multiplexers include but are not limited to a duplexer with two filters coupled together at a common node, a triplexer with three filters coupled together at a common node, a quadplexer with four filters coupled together at a common node, a hexaplexer with six filters coupled together at a common node, an octoplexer with eight filters coupled together at a common node, or the like.
- a multiplexer can include (a) filters for a lower frequency band with spurious responses below the pass bands and (b) filters for a higher frequency band with relatively high gamma below the pass band, in which the higher frequency band is above the lower frequency band.
- the filters for the lower frequency band can include a BAW filter.
- the filters for the higher frequency band can include one or more of an MPS filter, a SAW filter, a TCSAW filter, or a type I BAW filter.
- a multiplexer can include additional filters for one or more additional frequency bands in certain applications.
- FIGS. 10A and 10B illustrate example multiplexers.
- FIG. 10A is a schematic block diagram of a multiplexer 100 according to an embodiment.
- the multiplexer 100 includes a plurality of acoustic wave filters coupled to a common node COM.
- the plurality of acoustic wave filters can include any suitable number of filters including, for example, 3 acoustic wave filters, 4 acoustic wave filters, 5 acoustic wave filters, 6 acoustic wave filters, 7 acoustic wave filters, 8 acoustic wave filters, or more acoustic wave filters.
- Each of the acoustic wave filters can be band pass filters.
- the plurality of acoustic wave filters includes a BAW filter 102 and a SAW filter 104 .
- the multiplexer 100 also includes one or more other acoustic wave filters.
- the BAW filter 102 is coupled between a first RF node RF 1 and the common node COM.
- the BAW filter 102 has the lowest pass band of all acoustic wave filters of the multiplexer 100 .
- the SAW filter 104 has the highest pass band of all acoustic wave filters of the multiplexer 100 .
- the SAW filter 104 can be an MPS filter, a TCSAW filter, or a non-temperature compensated SAW filter.
- the one or more other acoustic wave filters have pass bands between the pass band of the BAW filter 102 and the pass band of the SAW filter 104 .
- the one or more other filters can include one or more BAW filters and/or one or more SAW filters.
- each BAW filter of the plurality of acoustic wave filters can have a lower pass band than a pass band of each SAW filter of the plurality of acoustic wave filters.
- the multiplexer 100 can include (a) BAW filters for a lower frequency band with spurious responses below the pass bands and (b) SAW filters for a higher frequency band with relatively high gamma below the pass band, in which the higher frequency band is above the lower frequency band.
- the multiplexer 100 can include additional filters for one or more additional frequency bands in certain applications.
- FIG. 10B is a schematic block diagram of a multiplexer 105 according to an embodiment.
- the multiplexer 105 includes a plurality of BAW filters coupled to a common node COM.
- the plurality of BAW filters can include any suitable number of filters including, for example, 3 BAW filters, 4 BAW filters, 5 BAW filters, 6 BAW filters, 7 BAW filters, 8 BAW filters, or more BAW filters.
- Each of the BAW filters can be band pass filters.
- a type II BAW filter has spurious modes below its resonant frequency.
- a type I BAW filter has spurious modes above its resonant frequency.
- the plurality of BAW includes a type II BAW filter 106 and a type I BAW filter 108 .
- the multiplexer 105 also includes one or more other BAW filters.
- the type II BAW filter 106 is coupled between a first RF node RF 1 and the common node COM.
- the type II BAW filter 106 has the lowest pass band of all BAW filters of the multiplexer 105 .
- the type I BAW filter 107 has the highest pass band of all acoustic wave filters of the multiplexer 105 .
- the one or more other BAW filters have pass bands between the pass band of the type II BAW filter 106 and the pass band of the type I BAW filter 107 .
- each type II BAW filter of the plurality of BAW filters can have a lower pass band than a pass band of each type I BAW filter of the plurality of BAW filters.
- Multiplexers disclosed herein can be used to facilitate carrier aggregation. Such multiplexers can include band pass filters for at least two different frequencies. In some instances, carrier aggregations can aggregate carriers in two different frequency bands, three different frequency bands, four different frequency bands, or more frequency bands.
- a multiplexer can include a transmit filter and/or a receive filter for each carrier in a carrier aggregation. As an example, for a two band carrier aggregation, a multiplexer can include a first transmit filter and a first receive filter for a first frequency band of a first carrier and a second transmit filter and a second receive filter for a second carrier of a second frequency band.
- a multiplexer can include 6 filters to support a three band carrier aggregation in which there is a transmit filter and a receive filter for each of the three bands.
- a multiplexer can include 8 filters to support a four band carrier aggregation in which there is a transmit filter and a receive filter for each of the four bands.
- Example Long Term Evolution (LTE) frequency bands for two band inter-band carrier aggregations, three band inter-band carrier aggregations, and four band inter-band carrier aggregations are included in the tables below. Any suitable principles and advantages of the multiplexers disclosed herein can be implemented to support any of the carrier aggregations identified in the tables below.
- LTE Long Term Evolution
- Quadplexers disclosed herein can implement inter-band carrier aggregations with two different bands.
- the quadplexers disclosed herein can support two band carrier aggregations with any suitable LTE band combinations included in Tables 1A and/or 1B.
- Multiplexers disclosed herein can implement inter-band carrier aggregations with three different bands.
- a hexaplexer in accordance with any suitable principles and advantages disclosed herein can support three band carrier aggregations with any suitable LTE band combinations included in Tables 2A and/or 2B.
- Multiplexers disclosed herein can implement inter-band carrier aggregations with four different bands.
- an octoplexer in accordance with any suitable principles and advantages disclosed herein can support four band carrier aggregations with any suitable LTE band combinations included in Table 3.
- a multiplexer including any suitable combination of features disclosed herein can include one or more filters arranged to filter a radio frequency signal in a fifth generation (5G) New Radio (NR) operating band within Frequency Range 1 (FR1).
- FR1 can be from 410 MHz to 7.125 GHz, for example, as specified in a current 5G NR specification.
- a multiplexer in accordance with any suitable principles and advantages disclosed herein can support any suitable 5G NR carrier aggregations within FR1.
- a multiplexer with a filter having a relatively high gamma in a passband of one or more other filters of the multiplexer can be advantageous for meeting specifications related to 5G NR technology. As one example, such a multiplexer can be advantageous for 5G NR carrier aggregation applications.
- One or more acoustic wave filters in multiplexers disclosed herein can have a passband that includes a 4G LTE operating band and a 5G NR operating band.
- FIG. 11A is a cross sectional view of a multilayer piezoelectric substrate (MPS) SAW resonator 110 according to an embodiment.
- the MPS SAW resonator 110 is an example of a resonator of the MPS filters disclosed herein.
- the MPS filters disclosed herein can include any suitable number of MPS SAW resonators, such as the MPS SAW resonator 110 .
- the illustrated MPS SAW resonator 110 includes a multilayer piezoelectric substrate includes a piezoelectric substrate 112 and a support substrate 114 .
- the piezoelectric substrate 112 can be a lithium niobate substrate or a lithium tantalate substrate, for example.
- the piezoelectric layer 114 can have a thickness of less than A, in which A is a wavelength of a surface acoustic wave generated by the MPS SAW resonator 110 . In some other instances, the piezoelectric layer 114 can have a thickness on the order of 10s of ⁇ , in which ⁇ is a wavelength of a surface acoustic wave generated by the MPS SAW resonator 110 . The thickness of the piezoelectric layer 114 can be in a range from about 20 microns to 30 microns in certain applications.
- the support substrate 114 can be a silicon substrate, a quartz substrate, a sapphire substrate, a polycrystalline spinel substrate, or any other suitable carrier substrate.
- the MPS SAW resonator 110 can include a piezoelectric substrate 112 that is lithium tantalate and a support substrate 114 that is silicon.
- the MPS SAW resonator 110 also includes an interdigital transducer (IDT) electrode 115 on the piezoelectric substrate 112 .
- IDT interdigital transducer
- one or more additional layers can be included in the multilayer piezoelectric substrate.
- a layer of the one or more additional layers include a silicon dioxide layer, a silicon nitride layer, an aluminum nitride layer, an adhesion layer, a dispersion adjustment layer, and a thermal dissipation layer.
- a multilayer piezoelectric substrate can include a lithium tantalate layer over a silicon dioxide layer over an aluminum nitride layer over a silicon layer.
- a multilayer piezoelectric substrate can include a lithium niobate layer over a silicon dioxide layer over a high impedance layer, in which the high impedance layer has a higher acoustic impedance than the lithium niobate layer.
- a temperature compensation layer can be implemented over the IDT electrode 115 .
- Such a temperature compensation layer can bring the temperature coefficient of frequency of the MPS SAW resonator closer to zero.
- a silicon dioxide layer can implement a temperature compensation layer.
- FIG. 11B is a cross sectional view of a SAW resonator 116 according to an embodiment.
- the SAW resonator 116 is an example of a resonator of SAW filters disclosed herein.
- the SAW resonator 116 is an example of a non-temperature compensated SAW resonator.
- SAW filters disclosed herein can include any suitable number of non-temperature compensated SAW resonators, such as the SAW resonator 116 .
- the illustrated SAW resonator 116 includes a piezoelectric substrate 112 and an IDT electrode 115 on the piezoelectric substrate 112 .
- the piezoelectric substrate 112 can be a lithium niobate substrate or a lithium tantalate substrate, for example.
- FIG. 11C is a cross sectional view of a TCSAW resonator 118 according to an embodiment.
- the TCSAW resonator 118 is an example of a resonator of TCSAW filters disclosed herein.
- TCSAW filters disclosed herein can include any suitable number of TCSAW resonators, such as the TCSAW resonator 118 .
- the illustrated TC SAW resonator 118 includes a piezoelectric substrate 112 , an IDT electrode 115 on the piezoelectric substrate 112 , and a temperature compensation layer 119 over the IDT electrode 115 .
- the piezoelectric substrate 112 can be a lithium niobate substrate or a lithium tantalate substrate, for example.
- the temperature compensation layer 119 can bring the temperature coefficient of frequency (TCF) of the TCSAW resonator 118 closer to zero relative to a similar SAW resonator without the temperature compensation layer 119 .
- the temperature compensation layer 119 can have a positive TCF. This can compensate for the piezoelectric substrate 112 having a negative TCF.
- the temperature compensation layer 119 can be a silicon dioxide (SiO 2 ) layer.
- the temperature compensation layer 119 can be any other suitable temperature compensating material including without limitation a tellurium dioxide (TeO 2 ) layer or a silicon oxyfluoride (SiOF layer).
- the temperature compensation layer 119 can include any suitable combination of SiO 2 , TeO 2 , and/or SiOF.
- FIG. 12 is a cross sectional view of a BAW resonator 120 according to an embodiment.
- the BAW resonator 120 is an example of a resonator of BAW filters disclosed herein.
- BAW filters disclosed herein can include any suitable number of BAW resonators, such as the BAW resonator 120 .
- the BAW resonator 120 is an FBAR.
- the BAW resonator 120 can be a type II BAW resonator.
- the BAW resonator 120 includes a piezoelectric layer 122 , a first electrode 123 , and a second electrode 124 , a support substrate 125 , and an air gap 126 .
- the piezoelectric layer 122 is disposed between the first electrode 123 and the second electrode 124 .
- the piezoelectric layer 122 can be an aluminum nitride (AlN) layer or any other suitable piezoelectric layer.
- An active region or active domain of the BAW resonator 120 is defined by the portion of the piezoelectric layer 122 that overlaps with both the first electrode 123 and the second electrode 124 .
- the first electrode 123 can have a relatively high acoustic impedance.
- the first electrode 123 can include molybdenum, tungsten, ruthenium, iridium, platinum, copper, gold, or any suitable combination thereof.
- the second electrode 124 can have a relatively high acoustic impedance.
- the second electrode 124 can be formed of the same material as the first electrode 123 in certain instances.
- the air gap 126 is included between the substrate 125 and the second electrode 124 .
- the illustrated air gap 126 is an air cavity above the substrate 125 . In some other instances (not illustrated), an air cavity in the substrate 125 can alternatively be implemented.
- the substrate 125 can be a silicon substrate, for example.
- FIG. 13 is a schematic diagram of an example ladder filter 130 according to an embodiment.
- the ladder filter 130 is an example topology of the band pass filter formed from acoustic wave resonators that can be included in a multiplexer in accordance with any suitable principles and advantages disclosed herein.
- the ladder filter 130 can be arranged to filter an RF signal.
- the ladder filter 130 includes series acoustic wave resonators 131 , 133 , 135 , 137 , and 139 and shunt acoustic wave resonators 132 , 134 , 136 , and 138 coupled between an RF port RF and an antenna port ANT.
- the RF port can be a transmit port for a transmit filter or a receive port for a receive filter.
- Any suitable number of series acoustic resonators can be in included in a ladder filter.
- Any suitable number of shunt acoustic wave resonators can be included in a ladder filter.
- Any of the illustrated acoustic wave resonators can be implemented by a plurality of series acoustic wave resonators and/or anti-series acoustic wave resonators and/or shunt acoustic wave resonators.
- the multiplexers discussed herein can be implemented in a variety of radio frequency systems. Multiplexers disclosed herein process radio frequency signals having frequencies in a range from about 450 MHz to 6 GHz and/or in a range from about 410 MHz to 7.125 GHz. In certain applications, multiplexers disclosed herein can filter radio frequency signals at up to about 10 GHz. Some radio frequency systems that include multiplexers in accordance with the principles and advantages discussed herein are configured to process carrier aggregation signals. In radio frequency systems with carrier aggregation, multiple filters can be arranged as a multiplexer and connected to a common antenna node. Some example radio frequency systems will be discussed with reference to FIGS. 14, 15, 16, 17A, and 17B in which any suitable principles and advantages of the multiplexers disclosed herein can be implemented.
- FIG. 14 is a schematic diagram of a radio frequency system 140 that includes quadplexers 142 and 144 coupled to an antenna 146 by way of a diplexer 146 .
- the first quadplexer 142 and/or the second quadplexer 144 can be implemented in accordance with any suitable principles and advantages of the multiplexers disclosed herein.
- a first quadplexer 142 includes four acoustic wave filters each arranged as a band pass filter configured to filter a radio frequency signal.
- the four acoustic wave filters include two transmit filters and two receive filters.
- a second quadplexer 144 also includes four acoustic wave filters similar to the acoustic wave filters of the first quadplexer 142 but associated with different frequency bands.
- the diplexer 145 can frequency multiplex radio frequency signals propagating between the illustrated quadplexers 142 and 144 and the antenna 146 .
- the diplexer 146 can allow lower frequency signals to propagate between the first quadplexer 142 and the antenna 146 , and the diplexer 145 can allow higher frequency signals to propagate between the second quadplexer 144 and the antenna 146 .
- FIG. 15 is a schematic diagram of a radio frequency system 150 that includes a quadplexer 142 coupled to an antenna 146 .
- FIG. 15 illustrates that a multiplexer in accordance with any suitable principles and advantages disclosed herein can be connected to an antenna without an intervening frequency multiplexing circuit (e.g., a diplexer or a triplexer) in some applications. For instance, when a carrier aggregation signal includes two carriers that are relatively close in frequency, a diplexer or a triplexer can be relatively difficult and/or expensive to implement and/or have relatively high loss. In such circumstances, filters can be connected together at a common node as a multiplexer.
- such a multiplexer can be a quadplexer with transmit and receive filters for Band 25 and Band 66 .
- a multiplexer can be connected to an antenna without an intervening switch or frequency multiplexing circuit in certain applications, as shown in FIG. 15 .
- a mobile phone configured for wireless communication of a carrier aggregation signal with only two carrier aggregation bands can include a multiplexer having a multiplexer connected to an antenna without any intervening switch or frequency multiplexing circuit.
- FIG. 16 is a schematic diagram of a radio frequency system 160 that includes an antenna 162 coupled to receive paths 165 and 166 by way of a multiplexer.
- a radio can be implemented for diversity receive operations.
- a diversity antenna such as the illustrated antenna 162 , can provide a received radio frequency signal to several receive paths.
- a multiplexer in accordance with any suitable principles and advantages disclosed herein can be coupled between a plurality of receive paths 165 and 166 and the diversity antenna 162 .
- a multiplexer e.g., a quadplexer
- receive filters 163 and 164 can be coupled between receive paths 165 and 164 , respectively, and the antenna 162 .
- any suitable number of receive paths and corresponding receive filters can be implemented for a particular implementation. For instance, 4 or more receive filters can be included in a multiplexer and respective receive paths in some instances.
- a switch can be coupled between a multiplexer and a diversity antenna and/or a switch can be coupled between receive paths and a receive filter of the multiplexer.
- FIG. 17A is a schematic diagram of a radio frequency system 170 that includes multiplexers in signal paths between power amplifiers and an antenna.
- the illustrated radio frequency system 170 includes a low band path, a medium band path, and a high band path.
- a low band path can process radio frequency signals having a frequency of less than 1 GHz
- a medium band path can process radio frequency signals having a frequency between 1 GHz and 2.2 GHz
- a high band path can process radio frequency signals having a frequency above 2.2 GHz.
- Any of the multiplexers 173 , 176 , and 179 of the radio frequency system 170 can be implemented in accordance with any suitable principles and advantages disclosed herein.
- a frequency multiplexing circuit such as a diplexer 145
- a frequency multiplexing circuit can serve as a frequency splitter for receive paths and a frequency combiner for transmit paths.
- the diplexer 145 can frequency multiplex radio frequency signals that are relatively far away in frequency.
- the diplexer 145 can be implemented with passive circuit elements having a relatively low loss.
- the diplexer 145 can combine (for transmit) and separate (for receive) carrier aggregation signals.
- the low band path includes a power amplifier 171 configured to amplify a low band radio frequency signal, a band select switch 172 , and a multiplexer 173 .
- the band select switch 172 can electrically connect the output of the power amplifier 171 to a selected transmit filter of the multiplexer 173 .
- the selected transmit filter can be a band pass filter with a pass band corresponding to a frequency of an output signal of the power amplifier 171 .
- the multiplexer 173 can include any suitable number of transmit filters and any suitable number of receive filters.
- the multiplexer 173 can have the same number of transmit filters as receive filters in certain applications. In some instances, the multiplexer 173 can have a different number of transmit filters than receive filters.
- the medium band path includes a power amplifier 174 configured to amplify a medium band radio frequency signal, a band select switch 175 , and a multiplexer 176 .
- the band select switch 175 can electrically connect the output of the power amplifier 174 to a selected transmit filter of the multiplexer 176 .
- the selected transmit filter can be a band pass filter with a pass band corresponding to a frequency of an output signal of the power amplifier 174 .
- the multiplexer 176 can include any suitable number of transmit filters and any suitable number of receive filters.
- the multiplexer 176 can have the same number of transmit filters as receive filters in certain applications. In some instances, the multiplexer 176 can have a different number of transmit filters than receive filters.
- the high band path includes a power amplifier 177 configured to amplify a high band radio frequency signal, a band select switch 178 , and a multiplexer 179 .
- the band select switch 178 can electrically connect the output of the power amplifier 177 to a selected transmit filter of the multiplexer 179 .
- the selected transmit filter can be a band pass filter with pass band corresponding to a frequency of an output signal of the power amplifier 177 .
- the multiplexer 179 can include any suitable number of transmit filters and any suitable number of receive filters.
- the multiplexer 179 can have the same number of transmit filters as receive filters in certain applications. In some instances, the multiplexer 179 can have a different number of transmit filters than receive filters.
- a select switch 180 can selectively provide a radio frequency signal from the medium band path or the high band path to the diplexer 145 . Accordingly, the radio frequency system 170 can process carrier aggregation signals with either a low band and high band combination or a low band and medium band combination.
- FIG. 17B is a schematic diagram of another radio frequency system 182 that includes multiplexers in signal paths between power amplifiers and an antenna. Any of the multiplexers 173 , 183 , and 184 of the radio frequency system 170 can be implemented in accordance with any suitable principles and advantages disclosed herein.
- the radio frequency system 182 is like the radio frequency system 170 of FIG. 17A , except that the radio frequency system 182 includes switch-plexing features. Switch-plexing can be implemented in accordance with any suitable principles and advantages discussed herein.
- Switch-plexing can implement on-demand multiplexing. Some radio frequency systems can operate in a single carrier mode for a majority of time (e.g., about 95% of the time) and in a carrier aggregation mode for a minority of the time (e.g., about 5% of the time). Switch-plexing can reduce loading in a single carrier mode in which the radio frequency system can operate for the majority of the time relative to a multiplexer that includes filters having a fixed connection at a common node. Such a reduction in loading can be more significant when there are a larger number of filters included in multiplexer.
- multiplexers 183 and 184 are coupled to a diplexer 176 by way of a switch 185 .
- the switch 185 is configured as a multi-close switch that can have two or more throws active concurrently. Having multiple throws of the switch 185 active concurrently can enable transmission and/or reception of carrier aggregation signals.
- the switch 185 can also have a single throw active during a single carrier mode.
- the multiplexer 183 includes a plurality of duplexers coupled to separate throws of the switch 185 .
- the illustrated multiplexer 184 includes a plurality of duplexers coupled to separate throws of the switch 185 .
- one or more individual filters of a multiplexer can be coupled to a dedicated throw of a switch coupled between the individual filters and a common node.
- a switch could have twice as many throws as the illustrated switch 185 .
- the switch 185 is coupled between filters of the multiplexers 183 and 184 , respectively, and a common node COM.
- FIG. 17B illustrates that less than all of the filters of a multiplexer can be electrically connected to the common node concurrently.
- two or more throws of a switch coupled between a power amplifier and a multiplexer can be active concurrently.
- two or more throws of the band select switch 175 and/or the band select switch 178 can be active concurrently in certain embodiments.
- FIG. 18A is a block diagram of a filter assembly 190 with different die that include acoustic wave resonators of filters according to an embodiment.
- the filter assembly 190 includes a SAW die 191 and a BAW die 192 that are included on a common substrate 193 .
- a multiplexer in accordance with any suitable principles and advantages disclosed herein can include one filter with SAW resonators implemented on the SAW die 191 and another filter with BAW resonators implemented on the BAW die 192 .
- the BAW resonators can be FBARs according to certain embodiments.
- the BAW resonators can be type II BAW resonators.
- the SAW resonators can be MPS SAW resonators in certain embodiments. According to some other embodiments, the SAW resonators can include TCSAW resonators and/or non-temperature compensated SAW resonators.
- the substrate 193 can be a laminate substrate or any other suitable packaging substrate.
- the BAW die 192 includes a single filter and the SAW die 191 includes a single filter.
- BAW resonators of the BAW die 192 can be arranged as the BAW filter 12 of the duplexer 10 of FIG. 1A and MPS SAW resonators of the SAW die 191 can be arranged as the MPS filter 14 of the duplexer 10 of FIG. 1A .
- the BAW die 192 includes a single filter and the SAW die 191 includes two or more filters.
- BAW resonators of the BAW die 192 can be arranged as the BAW filter 22 of the quadplexer 73 of FIG. 7B and MPS SAW resonators of the SAW die 191 can be arranged as at least two of the MPS filters 26 , 28 , and 74 of the quadplexer 73 of FIG. 7B .
- FIG. 18B is a block diagram of a filter assembly 194 with different die that include acoustic wave resonators of filters according to an embodiment.
- the filter assembly 194 includes a SAW die 191 , a first BAW die 192 , and a second BAW die 195 on a common substrate 193 .
- a multiplexer in accordance with any suitable principles and advantages disclosed herein can include filters implemented on the SAW die 191 , the first BAW die 192 , and the second BAW die 195 .
- a triplexer can include a first filter on the first BAW die 192 , a second filter on the second BAW die 195 , and a third filter on the SAW die 191 .
- the first filter can have the lowest passband and the third filter can have the highest passband.
- a quadplexer can include a first filter on the first BAW die 192 , a second filter on the second BAW die 195 , a third filter on the SAW die 191 , and a fourth filter on the SAW die 191 .
- the first filter can have the lowest passband
- the second filter can have the next lowest passband
- the third filter can have the next lowest passband
- the fourth filter can have the highest passband.
- Such a quadplexer can implement any suitable combination of features of the quadplexer 20 of FIG. 2A and/or the quadplexer 90 of FIG. 9A .
- FIG. 18C is a block diagram of a filter assembly 196 with different die that include acoustic wave resonators of filters according to an embodiment.
- the filter assembly 196 includes a first SAW die 191 , a second SAW die 197 , a first BAW die 192 , and a second BAW die 195 on a common substrate 193 .
- a multiplexer in accordance with any suitable principles and advantages disclosed herein can include filters implemented on the first SAW die 191 , the second SAW die 197 , the first BAW die 192 , and the second BAW die 195 .
- a quadplexer can include a first filter on the first BAW die 192 , a second filter on the second BAW die 195 , a third filter on the first SAW die 191 , and a fourth filter on the second SAW die 197 .
- the first filter can have the lowest passband
- the second filter can have the next lowest passband
- the third filter can have the next lowest passband
- the fourth filter can have the highest passband.
- Such a quadplexer can implement any suitable combination of features of the quadplexer 20 of FIG. 2A and/or the quadplexer 90 of FIG. 9A .
- FIGS. 19 and 20 are schematic block diagrams of illustrative packaged modules according to certain embodiments.
- FIG. 19 is a schematic block diagram of a module 200 that includes a power amplifier 201 , a switch 202 , and a multiplexer 203 according to an embodiment.
- the module 200 can include a package that encloses the illustrated elements. In some instances, the package can enclosed additional circuit elements.
- the power amplifier 201 , the switch 202 , and the multiplexer 203 can be disposed on a common packaging substrate.
- the packaging substrate can be a laminate substrate, for example.
- the switch 202 can be a multi-throw radio frequency switch.
- the switch 202 can electrically couple an output of the power amplifier 201 to a selected transmit filter of the multiplexer 203 .
- the switch 202 can electrically couple an input of a low noise amplifier (not illustrated) to a selected receive filter of the multiplexer 203 .
- the low noise amplifier can be included in the module 200 in some instances. According to some other instances, the low noise amplifier can be external to the module 200 .
- the multiplexer 203 can include any suitable features of the multiplexers disclosed herein.
- FIG. 20 is a schematic block diagram of a module 204 that includes power amplifiers 201 and 205 , switches 202 and 206 , and a multiplexer 207 according to an embodiment.
- the multiplexer 207 can implement any suitable combination of features of the multiplexers disclosed herein.
- the module 204 is like the module 200 of FIG. 19 , except that the module 204 includes an addition power amplifier 204 and an additional switch 206 and the multiplexer 207 can receive signals from the power amplifiers 201 and 205 .
- the switches 202 and 206 can concurrently couple outputs of the power amplifiers 201 and 205 , respectively, to different transmit filters of the multiplexer 207 .
- the switches 202 and 206 can concurrently couple inputs of low noise amplifiers (not illustrated) to different receive filters of the multiplexer 207 .
- FIG. 21A is a schematic diagram of a wireless communication 210 device that includes multiplexer(s) 213 in a radio frequency front end 212 according to an embodiment.
- the multiplexer(s) 213 can be implemented in accordance with any suitable principles and advantages discussed herein.
- the wireless communication device 210 can be any suitable wireless communication device.
- a wireless communication device 210 can be a mobile phone, such as a smart phone.
- the wireless communication device 210 includes an antenna 211 , an RF front end 212 , a transceiver 214 , a processor 215 , a memory 216 , and a user interface 217 .
- the antenna 211 can transmit RF signals provided by the RF front end 212 .
- Such RF signals can include carrier aggregation signals.
- the antenna 211 can receive RF signals and provide the received RF signals to the RF front end 212 for processing.
- Such RF signals can include carrier aggregation signals.
- the RF front end 212 can include one or more power amplifiers, one or more low noise amplifiers, one or more RF switches, one or more receive filters, one or more transmit filters, one or more duplex filters, one or more multiplexers, one or more frequency multiplexing circuits, the like, or any suitable combination thereof.
- the RF front end 212 can transmit and receive RF signals associated with any suitable communication standards.
- the multiplexer(s) 213 can include any suitable combination of features discussed with reference to any embodiments discussed above.
- the transceiver 214 can provide RF signals to the RF front end 212 for amplification and/or other processing.
- the transceiver 214 can also process an RF signal provided by a low noise amplifier of the RF front end 212 .
- the transceiver 214 is in communication with the processor 215 .
- the processor 215 can be a baseband processor.
- the processor 215 can provide any suitable base band processing functions for the wireless communication device 210 .
- the memory 216 can be accessed by the processor 215 .
- the memory 216 can store any suitable data for the wireless communication device 210 .
- the user interface 217 can be any suitable user interface, such as a display with touch screen capabilities.
- FIG. 21B is a schematic diagram of a wireless communication device 220 that includes multiplexer(s) 213 in a radio frequency front end 212 and second filters 223 in a diversity receive module 222 .
- the wireless communication device 220 is like the wireless communication device 210 of FIG. 21A , except that the wireless communication device 220 also includes diversity receive features.
- the wireless communication device 220 includes a diversity antenna 221 , a diversity module 222 configured to process signals received by the diversity antenna 221 and including multiplexer(s) 223 , and a transceiver 224 in communication with both the radio frequency front end 212 and the diversity receive module 222 .
- the multiplexer(s) 223 can include any suitable combination of features discussed with reference to any embodiments discussed above.
- any of the embodiments described above can be implemented in association with mobile devices such as cellular handsets.
- the principles and advantages of the embodiments can be used for any systems or apparatus, such as any uplink wireless communication device, that could benefit from any of the embodiments described herein.
- the teachings herein are applicable to a variety of systems. Although this disclosure includes example embodiments, the teachings described herein can be applied to a variety of structures. Any of the principles and advantages discussed herein can be implemented in association with RF circuits configured to process signals having a frequency in a range from about 30 kHz to 300 GHz, such as in a frequency range from about 400 MHz to 8.5 GHz.
- Acoustic wave filters disclosed herein can filter RF signals at frequencies up to and including millimeter wave frequencies.
- Examples of the electronic devices can include, but are not limited to, consumer electronic products, parts of the consumer electronic products such as packaged radio frequency modules, uplink wireless communication devices, wireless communication infrastructure, electronic test equipment, etc.
- Examples of the electronic devices can include, but are not limited to, a mobile phone such as a smart phone, a wearable computing device such as a smart watch or an ear piece, a telephone, a television, a computer monitor, a computer, a modem, a hand-held computer, a laptop computer, a tablet computer, a microwave, a refrigerator, a vehicular electronics system such as an automotive electronics system, a robot such as an industrial robot, an Internet of things device, a stereo system, a digital music player, a radio, a camera such as a digital camera, a portable memory chip, a home appliance such as a washer or a dryer, a peripheral device, a wrist watch, a clock, etc.
- the electronic devices can include unfinished products.
- Coupled refers to two or more elements that may be either directly connected, or connected by way of one or more intermediate elements.
- the word “connected”, as generally used herein refers to two or more elements that may be either directly connected, or connected by way of one or more intermediate elements.
- the words “herein,” “above,” “below,” and words of similar import when used in this application, shall refer to this application as a whole and not to any particular portions of this application. Where the context permits, words in the above Detailed Description using the singular or plural number may also include the plural or singular number respectively.
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Embodiments of this disclosure relate to multiplexers that include acoustic wave filters for filtering radio frequency signals. In certain embodiments, a multiplexer includes a first acoustic wave filter including bulk acoustic wave resonators and a second acoustic wave filter including multilayer piezoelectric substrate surface acoustic wave resonators. The second acoustic wave filter can have a second pass band that is above a first pass band of the first acoustic wave filter. Related acoustic filter assemblies, packaged radio frequency modules, wireless communication devices, and methods are disclosed.
Description
- Any and all applications for which a foreign or domestic priority claim is identified in the Application Data Sheet, or any correction thereto, are hereby incorporated by reference under 37 CFR 1.57.
- Embodiments of this disclosure relate to multiplexers with filters that include acoustic wave resonators.
- Acoustic wave filters can be implemented in radio frequency electronic systems. For instance, filters in a radio frequency front end of a mobile phone can include acoustic wave filters. An acoustic wave filter can be a band pass filter. A plurality of acoustic wave filters can be arranged as a multiplexer. For example, two acoustic wave filters can be arranged as a duplexer.
- An acoustic wave filter can include a plurality of acoustic wave resonators arranged to filter a radio frequency signal. Example acoustic wave filters include surface acoustic wave (SAW) filters and bulk acoustic wave (BAW) filters. Designing multiplexers with acoustic wave filters to meet performance specifications with low loss can be challenging.
- The innovations described in the claims each have several aspects, no single one of which is solely responsible for its desirable attributes. Without limiting the scope of the claims, some prominent features of this disclosure will now be briefly described.
- One aspect of this disclosure is a multiplexer with acoustic wave filters for filtering radio frequency signals. The multiplexer includes a first acoustic wave filter having a first pass band and a second acoustic wave filter coupled to the first acoustic wave filter at a common node. The first acoustic wave filter includes bulk acoustic wave resonators. The second acoustic wave filter having a second pass band with a frequency range above the first pass band. The second pass band is associated with a different frequency band than the first pass band. The second acoustic wave filter includes multilayer piezoelectric substrate surface acoustic wave resonators.
- The bulk acoustic wave resonators have spurious modes below the first pass band. The bulk acoustic wave resonators can have spurious modes below the first pass band, and the multilayer piezoelectric substrate surface acoustic wave resonators can have a gamma of at least 0.85 in the first pass band. Spurious modes of the bulk acoustic wave resonators can be outside of the second pass band. The bulk acoustic wave resonators can have a substantially constant gamma in the second pass band.
- The multilayer piezoelectric substrate surface acoustic wave resonators can have a gamma of at least 0.85 in the first pass band.
- The multiplexer can further include a third acoustic wave filter coupled to the common node and having a third pass band, in which the third pass band is between the first pass band and the second pass band. The third acoustic wave filter can be a bulk acoustic wave filter. The third acoustic wave filter can be a surface acoustic wave filter. The third acoustic wave filter can be a multilayer piezoelectric substrate surface acoustic wave filter. The third acoustic wave filter can be a temperature compensated substrate surface acoustic wave filter.
- The multiplexer can further include a third acoustic wave filter coupled to the common node and having a third pass band and a fourth acoustic wave filter coupled to the common node and having a fourth pass band. The third acoustic wave filter can include second bulk acoustic wave resonators. The fourth acoustic wave filter can include second multilayer piezoelectric surface acoustic wave resonators. The third pass band can be between the first pass band and the fourth pass band. The fourth pass band can be between the third pass band and the second pass band.
- The multiplexer can further include a third acoustic wave filter coupled to the common node and having a third pass band and a fourth acoustic wave filter coupled to the common node and having a fourth pass band. The first pass band and the third pass band can be associated with a first frequency band, and the second pass band and the fourth pass band can be associated with a second frequency band. The common node can be configured to receive a carrier aggregation signal including carriers associated with the first frequency band and the second frequency band.
- The multiplexer can further include two additional acoustic wave filters coupled to the common node, in which the first pass band being a lowest pass band of all acoustic wave filters of the multiplexer, and in which the second pass band being a highest pass band of all acoustic wave filters of the multiplexer.
- The multiplexer can further include four additional acoustic wave filters coupled to the common node, in which the first pass band is a lowest pass band of all acoustic wave filters of the multiplexer, and in which the second pass band being a highest pass band of all acoustic wave filters of the multiplexer.
- Another aspect of this disclosure is a wireless communication device that includes an antenna and a radio frequency front end including a multiplexer. The multiplexer can be any suitable multiplexer disclosed herein.
- The radio frequency front can include a frequency multiplexing circuit coupled between the common node of the multiplexer and the antenna. The wireless communication device can further include an antenna switch coupled between the common node of the multiplexer and the antenna.
- Another aspect of this disclosure is a packaged radio frequency module that includes a multiplexer, a multi-throw radio frequency switch coupled to the multiplexer, and a package enclosing the multiplexer and the multi-throw radio frequency switch. The multiplexer can include any suitable features of the multiplexers disclosed herein.
- The packaged radio frequency module can further include a power amplifier enclosed within the package, in which the power amplifier is configured to provide a radio frequency signal to the multiplexer.
- The packaged radio frequency module can further include a low noise amplifier enclosed within the package, in which the low noise amplifier is configured to receive a radio frequency signal to the multiplexer.
- Another aspect of this disclosure is an acoustic wave filter assembly that includes a bulk acoustic wave die on a substrate and a multilayer piezoelectric substrate die on the substrate. The bulk acoustic wave die includes bulk acoustic wave resonators arranged as a first filter having a first pass band. The multilayer piezoelectric substrate die includes multilayer piezoelectric substrate surface acoustic wave resonators arranged as a second filter having a second pass band. The second filter is coupled to the first filter at a common node. The second pass band is associated with a different frequency band than the first pass band.
- The substrate can be a laminate substrate. The acoustic wave filter assembly can further include a package enclosing the bulk acoustic wave die and the multilayer piezoelectric substrate die.
- The acoustic wave filter assembly can further include a surface acoustic wave die on the substrate, in which the surface acoustic wave die includes surface acoustic wave resonators arranged as a third filter coupled to the common node. The surface acoustic wave resonators can be temperature compensated surface acoustic wave resonators. The surface acoustic wave resonators can be second multilayer piezoelectric substrate surface acoustic wave resonators.
- The first filter and the second filter can be included in a multiplexer that includes one or more suitable features of the multiplexers disclosed herein.
- Another aspect of this disclosure is a multiplexer with acoustic wave filters for filtering radio frequency signals. The multiplexer includes a first acoustic wave filter having a first pass band and a second acoustic wave filter coupled to the first acoustic wave filter at a common node. The first acoustic wave filter includes type II bulk acoustic wave resonators, in which the type II bulk acoustic wave resonators have spurious modes below the first pass band. The second acoustic wave filter have a second pass band with a frequency range above the first pass band. The second acoustic wave filter includes type I bulk acoustic wave resonators having spurious modes above the second pass band.
- The type I bulk acoustic wave resonators can have a gamma of at least 0.85 in the first pass band. The type II bulk acoustic wave resonators can have a substantially constant gamma in the second pass band.
- The multiplexer can further include a third acoustic wave filter coupled to the common node and having a third pass band, in which the third pass band is between the first pass band and the second pass band.
- The multiplexer can further include two additional acoustic wave filters coupled to the common node, in which the first pass band is a lowest pass band of all acoustic wave filters of the multiplexer. The multiplexer can support a carrier aggregation of two frequency bands.
- The multiplexer can further include four additional acoustic wave filters coupled to the common node, in which the first pass band is a lowest pass band of all acoustic wave filters of the multiplexer, and in which the second pass band is a highest pass band of all acoustic wave filters of the multiplexer. The multiplexer can support a carrier aggregation of three frequency bands.
- Another aspect of this disclosure is a multiplexer with acoustic wave filters for filtering radio frequency signals. The multiplexer includes a first acoustic wave filter coupled to a common node and having a first pass band, the first acoustic wave filter including bulk acoustic wave resonators; a second acoustic wave filter coupled to the common node and having a second pass band; a third acoustic wave filter coupled to the common node and having a third pass band; and a fourth acoustic wave filter coupled to the common node and having a fourth pass band, the fourth acoustic wave filter including surface acoustic wave resonators, the first pass band being a lowest pass band of all acoustic wave filters of the multiplexer.
- The fourth pass band can be a highest pass band of all acoustic wave filters of the multiplexers.
- The surface acoustic wave resonators can include multilayer piezoelectric substrate surface acoustic wave resonators.
- The first acoustic wave filter and third acoustic wave filter can each include multilayer piezoelectric substrate surface acoustic wave resonators.
- The second acoustic wave filter, third acoustic wave filter, and the fourth acoustic wave filter can each include multilayer piezoelectric substrate surface acoustic wave resonators.
- The surface acoustic wave resonators can include temperature compensated surface acoustic wave resonators.
- The second acoustic wave filter can include second bulk acoustic wave resonators, the third acoustic wave filter can include second surface acoustic wave resonators, and the second pass band can be below the third pass band.
- The second acoustic wave filter can include second bulk acoustic wave resonators, the third acoustic wave filter can include third bulk acoustic wave resonators, and the second pass band can be below the third pass band.
- The second acoustic wave filter can include second surface acoustic wave resonators, the third acoustic wave filter can include third surface acoustic wave resonators, and the second pass band can be below the third pass band.
- The multiplexer is configured can support a carrier aggregation of two frequency bands.
- The multiplexer can further include: a fifth acoustic wave filter coupled to the common node and having a fifth pass band; and a sixth acoustic wave filter coupled to the common node and having a sixth pass band. The multiplexer can support a carrier aggregation of three frequency bands.
- The bulk acoustic wave resonators can have spurious modes below the first pass band.
- The surface acoustic wave resonators can have a gamma of at least 0.85 in the first pass band.
- The bulk acoustic wave resonators can have spurious modes below the first pass band, and the surface acoustic wave resonators have a gamma of at least 0.85 in the first pass band.
- Spurious modes of the bulk acoustic wave resonators can be outside of the fourth pass band.
- The bulk acoustic wave resonators can have a substantially constant gamma in the fourth pass band.
- For purposes of summarizing the disclosure, certain aspects, advantages and novel features of the innovations have been described herein. It is to be understood that not necessarily all such advantages may be achieved in accordance with any particular embodiment. Thus, the innovations may be embodied or carried out in a manner that achieves or optimizes one advantage or group of advantages as taught herein without necessarily achieving other advantages as may be taught or suggested herein.
- Embodiments of this disclosure will now be described, by way of non-limiting example, with reference to the accompanying drawings.
-
FIG. 1A is a schematic block diagram of a duplexer according to an embodiment. -
FIG. 1B is a graph of transmission characteristics over frequency for filters of the duplexer ofFIG. 1A . -
FIG. 2A is a schematic block diagram of a quadplexer according to an embodiment. -
FIG. 2B is a graph of transmission characteristics over frequency for filters of the quadplexer ofFIG. 2A . -
FIG. 3A is a graph of transmission characteristics over frequency for filters of the quadplexer ofFIG. 2A compared to standalone filters. -
FIG. 3B is a graph of gamma over frequency for the quadplexer ofFIG. 2A with bulk acoustic wave (BAW) filters having pass bands below pass bands of a multilayer piezoelectric substrate (MPS) surface acoustic wave (SAW) filters. -
FIG. 4A is a graph of transmission characteristics over frequency for a quadplexer compared to standalone filters. -
FIG. 4B is a graph of gamma over frequency for the quadplexer corresponding toFIG. 4A . -
FIG. 5A is a graph of transmission characteristics over frequency for a quadplexer compared to standalone filters. -
FIG. 5B is a graph of gamma over frequency for the quadplexer corresponding toFIG. 5A . -
FIG. 6A is a schematic block diagram of a duplexer according to an embodiment. -
FIG. 6B is a schematic block diagram of a duplexer according to another embodiment. -
FIG. 6C is a schematic block diagram of a duplexer according to another embodiment. -
FIG. 7A is a schematic block diagram of a quadplexer according to an embodiment. -
FIG. 7B is a schematic block diagram of a quadplexer according to another embodiment. -
FIG. 8 is a schematic block diagram of a quadplexer according to another embodiment. -
FIG. 9A is a schematic block diagram of a quadplexer according to another embodiment. -
FIG. 9B is a schematic block diagram of a quadplexer according to another embodiment. -
FIG. 9C is a schematic block diagram of a quadplexer according to another embodiment. -
FIG. 10A is a schematic block diagram of a multiplexer according to an embodiment. -
FIG. 10B is a schematic block diagram of a multiplexer according to another embodiment. -
FIG. 11A is a cross sectional view of an MPS SAW resonator according to an embodiment. -
FIG. 11B is a cross sectional view of a SAW resonator according to an embodiment. -
FIG. 11C is a cross sectional view of a temperature compensated SAW resonator according to an embodiment. -
FIG. 12 is a cross sectional view of a bulk acoustic wave resonator according to an embodiment. -
FIG. 13 is a schematic diagram of a ladder filter according to an embodiment. -
FIG. 14 is a schematic diagram of a radio frequency system that includes quadplexers coupled to an antenna by way of a diplexer. -
FIG. 15 is a schematic diagram of a radio frequency system that includes a quadplexer coupled to an antenna. -
FIG. 16 is a schematic diagram of a radio frequency system that includes an antenna coupled to receive paths by way of a multiplexer. -
FIG. 17A is a schematic diagram of a radio frequency system that includes multiplexers in signal paths between power amplifiers and an antenna. -
FIG. 17B is a schematic diagram of another radio frequency system that includes multiplexers in signal paths between power amplifiers and an antenna. -
FIG. 18A is a block diagram that illustrates different die that include acoustic wave resonators of filters of a multiplexer according to an embodiment. -
FIG. 18B is a block diagram that illustrates different die that include acoustic wave resonators of filters of a multiplexer according to an embodiment. -
FIG. 18C is a block diagram that illustrates different die that include acoustic wave resonators of filters of a multiplexer according to an embodiment. -
FIG. 19 is a schematic block diagram of a module that includes a power amplifier, a switch, and a multiplexer according to an embodiment. -
FIG. 20 is a schematic block diagram of a module that includes power amplifiers, switches, and a multiplexer according to an embodiment. -
FIG. 21A is a schematic block diagram of a wireless communication device that includes a multiplexer according to an embodiment. -
FIG. 21B is a schematic block diagram of a wireless communication device that includes a multiplexer according to an embodiment. - The following description of certain embodiments presents various descriptions of specific embodiments. However, the innovations described herein can be embodied in a multitude of different ways, for example, as defined and covered by the claims. In this description, reference is made to the drawings where like reference numerals can indicate identical or functionally similar elements. It will be understood that elements illustrated in the figures are not necessarily drawn to scale. Moreover, it will be understood that certain embodiments can include more elements than illustrated in a drawing and/or a subset of the elements illustrated in a drawing. Further, some embodiments can incorporate any suitable combination of features from two or more drawings.
- Surface acoustic wave (SAW) and bulk acoustic wave (BAW) technologies are both capable of achieving relatively high impedance values out-of-band. Certain high performance BAW filters can outperform SAW filters in terms of out-of-band impedance magnitude over a wider frequency span. At the same time, BAW filters can be suited to filter signals having frequencies up to about 10 gigahertz (GHz). BAW filters can achieve relatively low insertion loss and desirable rejection of adjacent frequency bands. On the other hand, SAW filters can be lower cost than BAW filters. SAW filters include, for example, multilayer piezoelectric substrate (MPS) SAW filters, temperature compensated SAW (TCSAW) filters, and non-temperature compensated SAW filters. However, SAW filters can encounter difficulty filtering signals at relatively high frequencies, such as frequencies above about 2.7 GHz, in certain applications. Given these differences in technology, SAW filters can be used for filtering relatively lower frequencies than BAW filters in a variety of applications and thereby save costs.
- Low loss multiplexer devices are desired for relatively complex radio frequency (RF) systems for mobile communication. A multiplexer can include band pass filters coupled together at a common node. Insertion loss of a filter in the multiplexer is typically degraded compared to standalone filters due to loading from other filters of the multiplexer. This disclosure provides low loss multiplexers that include a bulk acoustic wave (BAW) filter and a multilayer piezoelectric substrate (MPS) SAW filter. An MPS SAW filter can be referred to as an MPS filter. Other low loss multiplexers are disclosed.
- Low insertion loss can be difficult to achieve in a multiplexer that includes a plurality of filters. This can be due to loading. To address loading problems, multiplexers with a BAW filter and an MPS SAW filter are disclosed. By setting the pass band of the BAW filter to a lower frequency than the pass band of the MPS SAW filter, loading can be reduced and/or almost eliminated. The BAW filter can achieve desirable gamma for higher frequencies and the MPS SAW filter can achieve desirable gamma for lower frequencies. Gamma is a reflection coefficient. A multiplexer with a BAW filter having the lowest pass band of all filters of the multiplexer and an MPS SAW filter having the highest pass band of all filters of the multiplexer can achieve low loading loss and low insertion loss for the multiplexer. Other types of SAW filters (e.g., a temperature compensated SAW filter) can be implemented in place of the MPS SAW filter and achieve relatively low insertion loss for filters in a multiplexer in certain instances.
-
FIG. 1A is a schematic block diagram of aduplexer 10 according to an embodiment. The illustratedduplexer 10 includes aBAW filter 12 and anMPS filter 14. TheBAW filter 12 and theMPS filter 14 are band pass filters coupled together at a common node COM. TheBAW filter 12 is coupled between a first RF node RF1 and the common node COM. TheBAW filter 12 includes BAW resonators. The BAW resonators can be film bulk acoustic wave resonators (FBARs). In some other applications, the BAW resonators can include solidly mounted resonators (SMRs). TheMPS filter 14 is coupled between a second RF node RF2 and the common node COM. TheMPS filter 14 includes MPS SAW resonators. For example, all acoustic wave resonators of theMPS filter 14 can be MPS SAW resonators. MPS SAW resonators can include layered substrate SAW resonators and/or bonded substrate SAW resonators. TheBAW filter 12 and theMPS filter 14 can be associated with the same frequency band in certain instances, in which one filter is a transmit filter and the other filter is a receive filter. TheBAW filter 12 and theMPS filter 14 can be associated with different frequency bands in some instances, such as in diversity receive applications and/or in any other suitable applications in which filtering of different bands in a duplexer is desired. TheBAW filter 12 and theMPS filter 14 can be associated with different frequency sub-bands within the same frequency band in some instances. -
FIG. 1B is a graph of transmission characteristics over frequency for filters of theduplexer 10 ofFIG. 1A .FIG. 1B illustrates afirst pass band 16 of theBAW filter 12 and a second pass band of theMPS filter 14. As illustrated, thesecond pass band 18 spans a frequency range above thefirst pass band 16. As also illustrated inFIG. 1B , thefirst pass band 16 spans a frequency range below thesecond pass band 18. - Referring back to
FIG. 1A , theBAW filter 12 can have thefirst pass band 16 and a first stop band above thefirst pass band 16. In the first stop band, the frequency response of theBAW filter 12 can be relatively clean. TheBAW filter 12 can include type II BAW resonators that have spurious modes below their respective resonant frequencies. Accordingly, spurious modes of theBAW filter 12 can be outside of thesecond pass band 18 of theMPS filter 14. TheMPS filter 14 can have thesecond pass band 18 and a second stop band belowsecond pass band 18. In the second stop band, the frequency response of theMPS filter 14 can be relatively clean. MPS SAW resonators of theMPS filter 14 can have spurious modes above their respective resonant frequencies. Accordingly, spurious modes of theMPS filter 14 can be outside of thefirst pass band 16 of theBAW filter 12. - The
duplexer 10 can be a relatively loss low duplexer due to the spurious modes of theBAW filter 12 being outside of thesecond pass band 18 of theMPS filter 14 and the spurious modes of theMPS filter 14 being outside of thefirst pass band 16 of theBAW filter 12. - Multiplexers with more filters coupled to common node can have more significant technical challenges related to loading relative to multiplexers with fewer filters coupled to a common node. For example, loading can be a more significant technical challenge to address for quadplexers than for duplexers because more filters are coupled together at a common node that can contribute to loading in quadplexers. Accordingly, in quadplexers, there can be more other filters that can undesirably impact insertion loss in a pass band of a particular filter than in duplexers.
-
FIG. 2A is a schematic block diagram of aquadplexer 20 according to an embodiment. Thequadplexer 20 includes four acoustic wave filters coupled to a common node COM. As illustrated, thequadplexer 20 includes afirst BAW filter 22, asecond BAW filter 24, afirst MPS filter 26, and asecond MPS filter 28. Thefirst BAW filter 22 is coupled between a first RF node RF1 and the common node COM. Thesecond BAW filter 24 is coupled between a second RF node RF2 and the common node COM. Thefirst BAW filter 22 and thesecond BAW filter 24 each include BAW resonators (e.g., FBARs and/or SMRs). In an embodiment, the acoustic wave resonators of thefirst BAW filter 22 and thesecond BAW filter 24 consist of FBARs. Thefirst MPS filter 26 is coupled between a third RF node RF3 and the common node COM. Thesecond MPS filter 28 is coupled between a fourth RF node RF4 and the common node COM. Thefirst MPS filter 26 and thesecond MPS filter 28 each include MPS SAW resonators. - In certain applications, the
quadplexer 20 can be similar to a first duplexer that includes BAW filters 22 and 24 for first frequency band and a second duplexer that includes MPS filters 26 and 28 for a second frequency band coupled together at the common node COM, in which the second frequency band is above the first frequency band. -
FIG. 2B is a graph of transmission characteristics over frequency for filters of thequadplexer 20 ofFIG. 2A .FIG. 2B illustrates afirst pass band 32 of thefirst BAW filter 22, asecond pass band 34 of thesecond BAW filter 24, athird pass band 36 of thefirst MPS filter 26, and afourth pass band 38 of thesecond MPS filter 28. Thefirst pass band 32 of thefirst BAW filter 22 is lower than the pass bands of all other acoustic wave filters of thequadplexer 20. Thefourth pass band 38 of thesecond MPS filter 28 is higher than the pass bands of all other acoustic wave filters of thequadplexer 20. Thesecond pass band 34 of thesecond BAW filter 24 is below thethird pass band 36 of thefirst MPS filter 34. Accordingly, the pass bands of each BAW filter of thequadplexer 20 are below the pass bands of each MPS filter of thequadplexer 20. - The BAW filters 22 and 24 can have respective stop bands above their
pass bands pass bands pass bands pass bands -
FIG. 3A is a graph of transmission characteristics over frequency for filters of thequadplexer 20 ofFIG. 2A compared to standalone filters. In thequadplexer 20, BAW filters 22 and 24 have pass bands below pass bands of the MPS filters 26 and 28. Insertion loss degradation can correspond to the reduction in transmission characteristics due to loading in thequadplexer 20. According, the graph inFIG. 3A should illustrate the impact of loading in thequadplexer 20 by the difference between the transmission characteristics for a standalone filter and the transmission characteristics for the same filter in thequadplexer 20.FIG. 3A indicates that insertion loss degradation for BAW filters 22 and 24 is relatively small. In addition,FIG. 3A indicates that insertion loss degradation is relatively small for theMPS filter -
FIG. 3B is a graph of gamma over frequency for theBAW filers quadplexer 20 ofFIG. 2A in which the BAW filters 22 and 24 have lower pass bands than the MPS filters 26 and 28.FIG. 3B illustrates that there is relatively high gamma for the BAW filters 22 and 24 above the pass bands of the BAW filters 22 and 24. Relatively high gamma for the BAW filters 22 and 24 is indicated at for the respective pass bands of the MPS filters 26 and 28. The BAW filters 22 and 24 can have gamma of at least 0.85 and/or at least 0.9 in the pass bands of the MPS filters 26 and 28. A maximum value of gamma can be 1. A gamma of 1 can indicate 100% reflection.FIG. 3B illustrates that there is relatively high gamma for the MPS filters 26 and 28 below the pass bands of the MPS filters 26 and 28. Relatively high gamma for the MPS filters 26 and 28 is indicated for the respective pass bands of the BAW filters 22 and 24. The MPS filters 26 and 28 can have gamma of at least 0.85 and/or at least 0.9 in the pass bands of the BAW filters 22 and 24. Accordingly, thequadplexer 20 ofFIG. 2A with BAW filters 22 and 24 having lower pass bands than MPS filters 26 and 28 is a desirable combination for multiplexing. -
FIG. 4A is a graph of transmission characteristics over frequency for a quadplexer compared to standalone filters. The quadplexer corresponding to the graphs ofFIGS. 4A and 4B includes two MPS filters and two BAW filters, in which the MPS filters have lower pass bands than the BAW filters. The graph ofFIG. 4A indicates significant insertion loss degradation in pass bands of the MPS filters due to loading loss. -
FIG. 4B is a graph of gamma over frequency for a quadplexer with two MPS filters having pass bands below two BAW filters. The graph ofFIG. 4B indicates that gamma for the BAW filters is degraded. The gamma degradation corresponds to pass bands of the MPS filters. -
FIG. 5A is a graph of transmission characteristics over frequency for a quadplexer compared to standalone filters. The quadplexer corresponding to the graphs ofFIGS. 5A and 5B includes two MPS filters and two BAW filters, in which the MPS filters have significantly lower pass bands than the BAW filters. There is over 250 megahertz (MHz) between the lower edge of a BAW filter pass band an upper edge of an MPS filter pass band as indicated byFIG. 5A . The graph ofFIG. 5A indicates significant insertion loss degradation in a pass band of the BAW filter with a higher pass band. -
FIG. 5B is a graph of gamma over frequency for a quadplexer with two MPS filters having pass bands significantly below two BAW filters. The graph ofFIG. 5B indicates that gamma for the MPS filters is degraded. The gamma degradation can be due to loading loss resulting from higher order spurious responses of the MPS filters. The gamma degradation corresponds to the pass band of the BAW filter with the higher pass band. - Based on the above simulation results, it can be desirable for a quadplexer to include (a) filters for a lower frequency band with spurious responses below the pass bands and (b) filters for a higher frequency band with relatively high gamma below the pass band. The filters for the lower frequency band can include a transmit filter and a receive filter. The filters for the lower frequency band can include a BAW filter. The filters for the higher frequency band can include a transmit filter and a receive filter. The filters for the higher frequency band can include one or more of an MPS filter, a SAW filter, a TCSAW filter, or a type I BAW filter.
- Although the
duplexer 10 ofFIG. 1A and thequadplexer 20 ofFIG. 2A include a BAW filter and an MPS filter, the principles and advantages disclosed herein can be applied to other types of filters with certain characteristics of the filters of theduplexer 10 ofFIG. 1A and thequadplexer 20 ofFIG. 2A . For example, a filter with a lowest pass band in a multiplexer can have spurious modes below its pass band. Such a filter can be a type II BAW filter. As another example, a filter with a highest pass band of a multiplexer can have relatively high gamma below its pass band. Such a filter can be an MPS filter, a SAW filter, a TCSAW filter, or a type I BAW filter. In certain applications, a multiplexer can include at least one acoustic wave filter with two or more different types of acoustic wave devices implemented with frequency domain characteristics of a filter of theduplexer 10 and/or a filter of thequadplexer 20. -
FIGS. 6A to 6C illustrate duplexers with a BAW filter having a first pass band that is below a second pass band of another type of acoustic wave filter. The other acoustic wave filter can be associated with the same frequency band as the BAW filter (e.g., the filters can be for uplink and downlink signals of the same frequency band). In some other applications, the BAW filter and the other acoustic wave filter can have pass bands associated with different frequency bands. -
FIG. 6A is a schematic block diagram of aduplexer 60 according to an embodiment. As illustrated, theduplexer 60 includes aBAW filter 12 and aSAW filter 62 coupled to each other at a common node COM. TheBAW filter 12 has a first pass band that is below a second pass band of theSAW filter 62. Theduplexer 60 is like theduplexer 10 ofFIG. 1A , except that aSAW filter 62 is implemented in place of theMPS filter 14. TheSAW filter 62 includes SAW devices, such as SAW resonators. The SAW resonators can be any suitable SAW resonators, including without limitation TCSAW resonators, non-temperature compensated SAW resonators, or MPS SAW resonators. -
FIG. 6B is a schematic block diagram of aduplexer 63 according to an embodiment. As illustrated, theduplexer 63 includes aBAW filter 12 and aTCSAW filter 64 coupled to each other at a common node COM. TheBAW filter 12 has a first pass band that is below a second pass band of theTCSAW filter 64. Theduplexer 63 is like theduplexer 10 ofFIG. 1A , except that aTCSAW filter 64 is implemented in place of theMPS filter 14. TheTCSAW filter 64 includes TCSAW resonators. -
FIG. 6C is a schematic block diagram of aduplexer 65 according to an embodiment. As illustrated, theduplexer 65 includes a typeII BAW filter 67 and a type I BAW filter 68 coupled to each other at a common node COM. The type IIBAW filter 67 has a first pass band that is below a second pass band of the type I BAWfilter 68. The type IIBAW filter 67 includes BAW resonators that have spurious modes below their resonant frequencies. The type I BAW filter 68 includes BAW resonators that have spurious modes above their resonant frequencies. -
FIGS. 7A and 7B illustrate quadplexers with a BAW filter having a lowest pass band of the filters of the quadplexer and an MPS filter having a highest pass band of the filters of the quadplexer. The filters with the middle pass bands of the quadplexers are implemented by different types of acoustic wave filters than thequadplexer 20 ofFIG. 2A . -
FIG. 7A is a schematic block diagram of aquadplexer 70 according to an embodiment. Thequadplexer 70 is like thequadplexer 20 ofFIG. 2A except that theMPS filter 26 of thequadplexer 20 is replaced by theBAW filter 72 in thequadplexer 70. -
FIG. 7B is a schematic block diagram of aquadplexer 73 according to another embodiment. Thequadplexer 73 is like thequadplexer 20 ofFIG. 2A except that theBAW filter 24 of thequadplexer 20 is replaced by theMPS filter 74 in thequadplexer 73. -
FIG. 8 is a schematic block diagram of aquadplexer 80 according to another embodiment. Thequadplexer 80 includes aBAW filter 22, afirst TCSAW filter 82, asecond TCSAW filter 84, and anMPS filter 28. TheBAW filter 22 has a lowest pass band of the filters of thequadplexer 80. TheMPS filter 28 has a highest pass band of the filters of thequadplexer 80. The filters with the middle pass bands of thequadplexer 80 are implemented by TCSAW resonators in thequadplexer 80. Thequadplexer 80 is an example of a quadplexer in which a different type of acoustic wave resonator implements filters with the middle two pass bands than filters with the highest and lowest pass bands. Thequadplexer 80 is like thequadplexer 20 ofFIG. 2A except that theBAW filter 24 of thequadplexer 20 and theMPS filter 26 are replaced by theTCSAW filter 82 and theTCSAW filter 84, respectively, in thequadplexer 80. -
FIGS. 9A to 9C illustrate quadplexers with a BAW filter having a lowest pass band of the filters of the quadplexer and a SAW filter having a highest pass band of the filters of the quadplexer. These figures illustrate that SAW filters can be implemented in combination with one or more BAW filters in a multiplexer in accordance with any suitable principles and advantages disclosed herein. The SAW filters can include without limitation one or more of TCSAW filters, non-temperature compensated SAW filters, or MPS filters. -
FIG. 9A is a schematic block diagram of a quadplexer 90 according to another embodiment. The quadplexer 90 includes afirst BAW filter 22, asecond BAW filter 24, afirst SAW filter 92, and asecond SAW filter 94 coupled together at a common node COM. Thefirst BAW filter 22 and thesecond BAW filter 24 each include BAW resonators (e.g., FBARs and/or SMRs). In an embodiment, the acoustic wave resonators of thefirst BAW filter 22 and thesecond BAW filter 24 consist of FBARs. Thefirst SAW filter 92 and thesecond SAW filter 94 include SAW resonators. The SAW resonators of thefirst SAW filter 92 and thesecond SAW filter 94 can include one or more TCSAW resonators, one or more non-temperature compensated SAW resonators, one or more MPS resonators, or any suitable combination thereof. In certain applications, the quadplexer 90 can be similar to a first duplexer that includes BAW filters 22 and 24 for first frequency band and a second duplexer that includesSAW filter - The BAW filters 22 and 24 can have respective stop bands above their pass bands. The BAW filters 22 and 24 can be a type II BAW filters that have spurious modes below their respective resonant frequencies. The SAW filters 26 and 28 can have respective stop bands below their pass bands. The SAW filters 26 and 28 can have spurious modes above their respective resonant frequencies.
-
FIG. 9B is a schematic block diagram of aquadplexer 95 according to another embodiment. Thequadplexer 95 is like the quadplexer 90 ofFIG. 9A except thatSAW filter 96 is included in thequadplexer 95 in place of theBAW filter 24 of the quadplexer 90. -
FIG. 9C is a schematic block diagram of aquadplexer 97 according to another embodiment. Thequadplexer 97 is like the quadplexer 90 ofFIG. 9A except thatBAW filter 72 is included in thequadplexer 97 in place of theSAW filter 92 of the quadplexer 90. - Although example embodiments are discussed with duplexers and quadplexers, any suitable the principles and advantages disclosed herein can be implement in a multiplexer that includes a plurality of filters coupled together at a common node. Examples of multiplexers include but are not limited to a duplexer with two filters coupled together at a common node, a triplexer with three filters coupled together at a common node, a quadplexer with four filters coupled together at a common node, a hexaplexer with six filters coupled together at a common node, an octoplexer with eight filters coupled together at a common node, or the like. A multiplexer can include (a) filters for a lower frequency band with spurious responses below the pass bands and (b) filters for a higher frequency band with relatively high gamma below the pass band, in which the higher frequency band is above the lower frequency band. The filters for the lower frequency band can include a BAW filter. The filters for the higher frequency band can include one or more of an MPS filter, a SAW filter, a TCSAW filter, or a type I BAW filter. A multiplexer can include additional filters for one or more additional frequency bands in certain applications.
FIGS. 10A and 10B illustrate example multiplexers. -
FIG. 10A is a schematic block diagram of amultiplexer 100 according to an embodiment. Themultiplexer 100 includes a plurality of acoustic wave filters coupled to a common node COM. The plurality of acoustic wave filters can include any suitable number of filters including, for example, 3 acoustic wave filters, 4 acoustic wave filters, 5 acoustic wave filters, 6 acoustic wave filters, 7 acoustic wave filters, 8 acoustic wave filters, or more acoustic wave filters. Each of the acoustic wave filters can be band pass filters. The plurality of acoustic wave filters includes aBAW filter 102 and aSAW filter 104. Themultiplexer 100 also includes one or more other acoustic wave filters. TheBAW filter 102 is coupled between a first RF node RF1 and the common node COM. TheBAW filter 102 has the lowest pass band of all acoustic wave filters of themultiplexer 100. TheSAW filter 104 has the highest pass band of all acoustic wave filters of themultiplexer 100. TheSAW filter 104 can be an MPS filter, a TCSAW filter, or a non-temperature compensated SAW filter. The one or more other acoustic wave filters have pass bands between the pass band of theBAW filter 102 and the pass band of theSAW filter 104. The one or more other filters can include one or more BAW filters and/or one or more SAW filters. In themultiplexer 100, each BAW filter of the plurality of acoustic wave filters can have a lower pass band than a pass band of each SAW filter of the plurality of acoustic wave filters. - The
multiplexer 100 can include (a) BAW filters for a lower frequency band with spurious responses below the pass bands and (b) SAW filters for a higher frequency band with relatively high gamma below the pass band, in which the higher frequency band is above the lower frequency band. Themultiplexer 100 can include additional filters for one or more additional frequency bands in certain applications. -
FIG. 10B is a schematic block diagram of amultiplexer 105 according to an embodiment. Themultiplexer 105 includes a plurality of BAW filters coupled to a common node COM. The plurality of BAW filters can include any suitable number of filters including, for example, 3 BAW filters, 4 BAW filters, 5 BAW filters, 6 BAW filters, 7 BAW filters, 8 BAW filters, or more BAW filters. Each of the BAW filters can be band pass filters. A type II BAW filter has spurious modes below its resonant frequency. A type I BAW filter has spurious modes above its resonant frequency. The plurality of BAW includes a type IIBAW filter 106 and a type I BAWfilter 108. Themultiplexer 105 also includes one or more other BAW filters. The type IIBAW filter 106 is coupled between a first RF node RF1 and the common node COM. The type IIBAW filter 106 has the lowest pass band of all BAW filters of themultiplexer 105. The type I BAW filter 107 has the highest pass band of all acoustic wave filters of themultiplexer 105. The one or more other BAW filters have pass bands between the pass band of the type IIBAW filter 106 and the pass band of the type I BAW filter 107. In themultiplexer 105, each type II BAW filter of the plurality of BAW filters can have a lower pass band than a pass band of each type I BAW filter of the plurality of BAW filters. - Multiplexers disclosed herein can be used to facilitate carrier aggregation. Such multiplexers can include band pass filters for at least two different frequencies. In some instances, carrier aggregations can aggregate carriers in two different frequency bands, three different frequency bands, four different frequency bands, or more frequency bands. A multiplexer can include a transmit filter and/or a receive filter for each carrier in a carrier aggregation. As an example, for a two band carrier aggregation, a multiplexer can include a first transmit filter and a first receive filter for a first frequency band of a first carrier and a second transmit filter and a second receive filter for a second carrier of a second frequency band. Some bands can be receive only or transmit only and for such filters only one filter can be included in a multiplexer to aggregate a carrier of that band with another a carrier. In another example, a multiplexer can include 6 filters to support a three band carrier aggregation in which there is a transmit filter and a receive filter for each of the three bands. As one more example, a multiplexer can include 8 filters to support a four band carrier aggregation in which there is a transmit filter and a receive filter for each of the four bands.
- Example Long Term Evolution (LTE) frequency bands for two band inter-band carrier aggregations, three band inter-band carrier aggregations, and four band inter-band carrier aggregations are included in the tables below. Any suitable principles and advantages of the multiplexers disclosed herein can be implemented to support any of the carrier aggregations identified in the tables below.
- Quadplexers disclosed herein can implement inter-band carrier aggregations with two different bands. For example, the quadplexers disclosed herein can support two band carrier aggregations with any suitable LTE band combinations included in Tables 1A and/or 1B.
-
TABLE 1A Inter-Band Carrier Aggregation Combinations of 2 Bands First Band Second Band 1 3 1 5 1 7 1 8 1 11 1 18 1 19 1 20 1 21 1 26 1 28 1 32 1 38 1 40 1 41 1 42 1 43 1 46 2 4 2 5 2 7 2 12 2 13 2 14 2 17 2 28 2 29 2 30 2 46 2 48 2 49 2 66 2 71 2 252 2 255 3 5 3 7 3 8 3 11 3 18 3 19 3 20 3 21 3 26 3 27 3 28 3 31 3 32 3 38 3 40 3 41 3 42 3 43 3 46 3 69 4 5 4 7 4 12 4 13 4 17 4 27 4 28 4 29 4 30 4 46 4 48 4 71 4 252 4 255 5 12 5 13 5 17 5 25 5 28 5 29 5 30 5 38 5 40 5 41 5 46 5 48 5 66 7 8 7 12 7 20 7 22 7 26 7 28 7 30 7 32 7 40 7 42 7 46 7 66 8 11 8 20 8 27 8 28 8 32 8 38 8 39 8 40 8 41 8 42 8 46 11 18 11 26 11 28 11 41 11 42 11 46 12 25 12 30 12 46 12 48 13 46 13 48 13 66 13 252 13 255 14 30 14 66 18 28 19 21 19 28 19 42 19 48 20 28 20 31 20 32 20 38 20 40 20 42 20 43 20 67 20 75 20 76 21 28 21 42 21 46 -
TABLE 1B Inter-Band Carrier Aggregation Combinations of 2 Bands (continued) First Band Second Band 23 29 25 26 25 41 25 46 26 41 26 46 26 48 28 38 28 40 28 41 28 42 29 30 29 66 29 70 30 66 32 42 32 43 34 33 34 41 38 40 39 40 39 41 39 42 33 46 40 41 40 42 40 43 40 46 41 42 41 46 41 48 42 43 42 46 46 48 46 66 46 70 46 71 48 66 48 71 66 70 66 71 70 71 - Multiplexers disclosed herein can implement inter-band carrier aggregations with three different bands. For example, a hexaplexer in accordance with any suitable principles and advantages disclosed herein can support three band carrier aggregations with any suitable LTE band combinations included in Tables 2A and/or 2B.
-
TABLE 2A Inter-Band Carrier Aggregation Combinations of 3 Bands First Band Second Band Third Band 1 3 5 1 3 7 1 3 8 1 3 11 1 3 18 1 3 19 1 3 20 1 3 21 1 3 26 1 3 28 1 3 32 1 3 38 1 3 40 1 3 41 1 3 42 1 3 43 1 5 7 1 5 40 1 5 41 1 5 46 1 7 8 1 7 20 1 7 26 1 7 28 1 7 32 1 7 40 1 7 42 1 7 46 1 8 11 1 8 20 1 8 28 1 8 38 1 8 40 1 11 18 1 11 28 1 18 28 1 19 21 1 19 28 1 19 42 1 20 28 1 20 32 1 20 42 1 20 43 1 21 28 1 21 42 1 28 42 1 32 42 1 32 43 1 41 42 1 42 43 2 4 5 2 4 7 2 4 12 2 4 13 2 4 28 2 4 29 2 4 30 2 4 71 2 5 7 2 5 12 2 5 13 2 5 28 2 5 29 2 5 30 2 5 46 2 5 66 2 7 12 2 7 28 2 7 30 2 7 46 2 7 66 2 12 30 2 12 66 2 13 46 2 13 48 2 13 66 2 14 30 2 14 66 2 29 30 2 29 66 2 30 66 2 46 48 2 46 66 2 48 66 2 66 71 3 5 7 3 5 40 3 5 41 3 7 8 3 7 20 3 7 26 3 7 28 3 7 32 3 7 38 3 7 40 3 7 42 3 7 46 3 8 11 3 8 20 3 8 28 3 8 32 3 8 38 3 8 40 3 11 18 3 11 26 3 11 28 3 19 21 3 19 42 3 20 28 3 20 32 3 20 42 3 20 43 3 21 28 3 21 42 -
TABLE 2B Inter-Band Carrier Aggregation Combinations of 3 Bands (continued) First Band Second Band Third Band 3 28 38 3 28 40 3 28 41 3 28 42 3 32 42 3 32 43 3 41 42 3 42 43 4 5 12 4 5 13 4 5 29 4 5 30 4 7 12 4 7 28 4 12 30 4 23 30 5 7 28 5 7 46 5 12 46 5 12 48 5 12 66 5 30 66 5 40 41 5 46 66 7 8 20 7 8 38 7 8 40 7 12 66 7 20 28 7 20 32 7 20 38 7 20 42 7 28 38 7 30 66 7 46 66 8 11 28 8 20 28 8 28 41 8 33 41 12 30 66 13 46 66 13 48 66 14 30 66 13 21 42 20 32 42 20 32 43 20 38 40 21 28 42 25 26 41 28 41 42 23 30 66 23 46 66 23 66 70 32 42 43 46 48 66 46 48 71 66 70 71 - Multiplexers disclosed herein can implement inter-band carrier aggregations with four different bands. For example, an octoplexer in accordance with any suitable principles and advantages disclosed herein can support four band carrier aggregations with any suitable LTE band combinations included in Table 3.
-
TABLE 3 Inter-Band Carrier Aggregation Combinations of 4 Bands First Band Second Band Third Band Fourth Band 1 3 5 7 1 3 5 40 1 3 5 41 1 3 7 8 1 3 7 20 1 3 7 26 1 3 7 28 1 3 7 32 1 3 7 40 1 3 7 42 1 3 8 11 1 3 8 20 1 3 8 28 1 3 8 38 1 3 8 40 1 3 11 28 1 3 19 21 1 3 19 42 1 3 20 28 1 3 20 32 1 3 20 42 1 3 20 43 1 3 21 28 1 3 21 42 1 3 28 42 1 3 32 42 1 3 32 43 1 3 42 43 1 5 7 46 1 7 8 20 1 7 8 40 1 7 20 28 1 7 20 32 1 7 20 42 1 8 11 28 1 8 20 28 1 19 21 42 1 20 32 42 1 20 32 43 1 21 28 42 1 32 42 43 2 4 5 12 2 4 5 29 2 4 5 30 2 4 7 12 2 4 12 30 2 4 29 30 2 5 7 28 2 5 12 66 2 5 30 66 2 7 12 66 2 7 46 66 2 12 30 66 2 13 48 66 2 14 30 66 2 29 30 66 2 46 48 66 3 7 8 20 3 7 8 38 3 7 8 40 3 7 20 28 3 7 20 32 3 7 20 42 3 7 28 38 3 8 11 28 3 8 20 28 3 19 21 42 3 20 32 42 3 20 32 43 3 21 28 42 3 28 41 42 3 32 42 43 - A multiplexer including any suitable combination of features disclosed herein can include one or more filters arranged to filter a radio frequency signal in a fifth generation (5G) New Radio (NR) operating band within Frequency Range 1 (FR1). FR1 can be from 410 MHz to 7.125 GHz, for example, as specified in a current 5G NR specification. A multiplexer in accordance with any suitable principles and advantages disclosed herein can support any suitable 5G NR carrier aggregations within FR1. A multiplexer with a filter having a relatively high gamma in a passband of one or more other filters of the multiplexer can be advantageous for meeting specifications related to 5G NR technology. As one example, such a multiplexer can be advantageous for 5G NR carrier aggregation applications. In 5G applications, the thermal dissipation of MPS acoustic wave resonators in filters of multiplexers disclosed herein can be advantageous. One or more acoustic wave filters in multiplexers disclosed herein can have a passband that includes a 4G LTE operating band and a 5G NR operating band.
-
FIG. 11A is a cross sectional view of a multilayer piezoelectric substrate (MPS)SAW resonator 110 according to an embodiment. TheMPS SAW resonator 110 is an example of a resonator of the MPS filters disclosed herein. The MPS filters disclosed herein can include any suitable number of MPS SAW resonators, such as theMPS SAW resonator 110. The illustratedMPS SAW resonator 110 includes a multilayer piezoelectric substrate includes apiezoelectric substrate 112 and asupport substrate 114. Thepiezoelectric substrate 112 can be a lithium niobate substrate or a lithium tantalate substrate, for example. In certain instances, thepiezoelectric layer 114 can have a thickness of less than A, in which A is a wavelength of a surface acoustic wave generated by theMPS SAW resonator 110. In some other instances, thepiezoelectric layer 114 can have a thickness on the order of 10s of λ, in which λ is a wavelength of a surface acoustic wave generated by theMPS SAW resonator 110. The thickness of thepiezoelectric layer 114 can be in a range from about 20 microns to 30 microns in certain applications. Thesupport substrate 114 can be a silicon substrate, a quartz substrate, a sapphire substrate, a polycrystalline spinel substrate, or any other suitable carrier substrate. As one example, theMPS SAW resonator 110 can include apiezoelectric substrate 112 that is lithium tantalate and asupport substrate 114 that is silicon. TheMPS SAW resonator 110 also includes an interdigital transducer (IDT)electrode 115 on thepiezoelectric substrate 112. - In some instances, one or more additional layers can be included in the multilayer piezoelectric substrate. Non-limiting examples of a layer of the one or more additional layers include a silicon dioxide layer, a silicon nitride layer, an aluminum nitride layer, an adhesion layer, a dispersion adjustment layer, and a thermal dissipation layer. As an illustrative example, a multilayer piezoelectric substrate can include a lithium tantalate layer over a silicon dioxide layer over an aluminum nitride layer over a silicon layer. As one more illustrative example, a multilayer piezoelectric substrate can include a lithium niobate layer over a silicon dioxide layer over a high impedance layer, in which the high impedance layer has a higher acoustic impedance than the lithium niobate layer.
- In some instances, a temperature compensation layer can be implemented over the
IDT electrode 115. Such a temperature compensation layer can bring the temperature coefficient of frequency of the MPS SAW resonator closer to zero. As an example, a silicon dioxide layer can implement a temperature compensation layer. -
FIG. 11B is a cross sectional view of aSAW resonator 116 according to an embodiment. TheSAW resonator 116 is an example of a resonator of SAW filters disclosed herein. TheSAW resonator 116 is an example of a non-temperature compensated SAW resonator. In certain applications, SAW filters disclosed herein can include any suitable number of non-temperature compensated SAW resonators, such as theSAW resonator 116. The illustratedSAW resonator 116 includes apiezoelectric substrate 112 and anIDT electrode 115 on thepiezoelectric substrate 112. Thepiezoelectric substrate 112 can be a lithium niobate substrate or a lithium tantalate substrate, for example. -
FIG. 11C is a cross sectional view of aTCSAW resonator 118 according to an embodiment. TheTCSAW resonator 118 is an example of a resonator of TCSAW filters disclosed herein. In certain applications, TCSAW filters disclosed herein can include any suitable number of TCSAW resonators, such as theTCSAW resonator 118. The illustratedTC SAW resonator 118 includes apiezoelectric substrate 112, anIDT electrode 115 on thepiezoelectric substrate 112, and atemperature compensation layer 119 over theIDT electrode 115. Thepiezoelectric substrate 112 can be a lithium niobate substrate or a lithium tantalate substrate, for example. - The
temperature compensation layer 119 can bring the temperature coefficient of frequency (TCF) of theTCSAW resonator 118 closer to zero relative to a similar SAW resonator without thetemperature compensation layer 119. Thetemperature compensation layer 119 can have a positive TCF. This can compensate for thepiezoelectric substrate 112 having a negative TCF. Thetemperature compensation layer 119 can be a silicon dioxide (SiO2) layer. Thetemperature compensation layer 119 can be any other suitable temperature compensating material including without limitation a tellurium dioxide (TeO2) layer or a silicon oxyfluoride (SiOF layer). Thetemperature compensation layer 119 can include any suitable combination of SiO2, TeO2, and/or SiOF. -
FIG. 12 is a cross sectional view of aBAW resonator 120 according to an embodiment. TheBAW resonator 120 is an example of a resonator of BAW filters disclosed herein. In certain applications, BAW filters disclosed herein can include any suitable number of BAW resonators, such as theBAW resonator 120. TheBAW resonator 120 is an FBAR. TheBAW resonator 120 can be a type II BAW resonator. - As illustrated, the
BAW resonator 120 includes a piezoelectric layer 122, afirst electrode 123, and asecond electrode 124, asupport substrate 125, and anair gap 126. The piezoelectric layer 122 is disposed between thefirst electrode 123 and thesecond electrode 124. The piezoelectric layer 122 can be an aluminum nitride (AlN) layer or any other suitable piezoelectric layer. An active region or active domain of theBAW resonator 120 is defined by the portion of the piezoelectric layer 122 that overlaps with both thefirst electrode 123 and thesecond electrode 124. Thefirst electrode 123 can have a relatively high acoustic impedance. For example, thefirst electrode 123 can include molybdenum, tungsten, ruthenium, iridium, platinum, copper, gold, or any suitable combination thereof. Similarly, thesecond electrode 124 can have a relatively high acoustic impedance. Thesecond electrode 124 can be formed of the same material as thefirst electrode 123 in certain instances. Theair gap 126 is included between thesubstrate 125 and thesecond electrode 124. The illustratedair gap 126 is an air cavity above thesubstrate 125. In some other instances (not illustrated), an air cavity in thesubstrate 125 can alternatively be implemented. Thesubstrate 125 can be a silicon substrate, for example. - Acoustic wave filters disclosed herein can have a ladder filter topology.
FIG. 13 is a schematic diagram of anexample ladder filter 130 according to an embodiment. Theladder filter 130 is an example topology of the band pass filter formed from acoustic wave resonators that can be included in a multiplexer in accordance with any suitable principles and advantages disclosed herein. Theladder filter 130 can be arranged to filter an RF signal. As illustrated, theladder filter 130 includes seriesacoustic wave resonators acoustic wave resonators - The multiplexers discussed herein can be implemented in a variety of radio frequency systems. Multiplexers disclosed herein process radio frequency signals having frequencies in a range from about 450 MHz to 6 GHz and/or in a range from about 410 MHz to 7.125 GHz. In certain applications, multiplexers disclosed herein can filter radio frequency signals at up to about 10 GHz. Some radio frequency systems that include multiplexers in accordance with the principles and advantages discussed herein are configured to process carrier aggregation signals. In radio frequency systems with carrier aggregation, multiple filters can be arranged as a multiplexer and connected to a common antenna node. Some example radio frequency systems will be discussed with reference to
FIGS. 14, 15, 16, 17A, and 17B in which any suitable principles and advantages of the multiplexers disclosed herein can be implemented. -
FIG. 14 is a schematic diagram of aradio frequency system 140 that includes quadplexers 142 and 144 coupled to anantenna 146 by way of adiplexer 146. Thefirst quadplexer 142 and/or thesecond quadplexer 144 can be implemented in accordance with any suitable principles and advantages of the multiplexers disclosed herein. InFIG. 14 , afirst quadplexer 142 includes four acoustic wave filters each arranged as a band pass filter configured to filter a radio frequency signal. The four acoustic wave filters include two transmit filters and two receive filters. InFIG. 14 , asecond quadplexer 144 also includes four acoustic wave filters similar to the acoustic wave filters of thefirst quadplexer 142 but associated with different frequency bands. Thediplexer 145 can frequency multiplex radio frequency signals propagating between the illustrated quadplexers 142 and 144 and theantenna 146. Thediplexer 146 can allow lower frequency signals to propagate between thefirst quadplexer 142 and theantenna 146, and thediplexer 145 can allow higher frequency signals to propagate between thesecond quadplexer 144 and theantenna 146. -
FIG. 15 is a schematic diagram of aradio frequency system 150 that includes aquadplexer 142 coupled to anantenna 146.FIG. 15 illustrates that a multiplexer in accordance with any suitable principles and advantages disclosed herein can be connected to an antenna without an intervening frequency multiplexing circuit (e.g., a diplexer or a triplexer) in some applications. For instance, when a carrier aggregation signal includes two carriers that are relatively close in frequency, a diplexer or a triplexer can be relatively difficult and/or expensive to implement and/or have relatively high loss. In such circumstances, filters can be connected together at a common node as a multiplexer. As one example, such a multiplexer can be a quadplexer with transmit and receive filters for Band 25 and Band 66. A multiplexer can be connected to an antenna without an intervening switch or frequency multiplexing circuit in certain applications, as shown inFIG. 15 . For instance, a mobile phone configured for wireless communication of a carrier aggregation signal with only two carrier aggregation bands can include a multiplexer having a multiplexer connected to an antenna without any intervening switch or frequency multiplexing circuit. -
FIG. 16 is a schematic diagram of aradio frequency system 160 that includes anantenna 162 coupled to receivepaths antenna 162, can provide a received radio frequency signal to several receive paths. A multiplexer in accordance with any suitable principles and advantages disclosed herein can be coupled between a plurality of receivepaths diversity antenna 162. As shown inFIG. 16 , a multiplexer (e.g., a quadplexer) including receivefilters 163 and 164 can be coupled between receivepaths 165 and 164, respectively, and theantenna 162. Any suitable number of receive paths and corresponding receive filters can be implemented for a particular implementation. For instance, 4 or more receive filters can be included in a multiplexer and respective receive paths in some instances. In some embodiments (not illustrated), a switch can be coupled between a multiplexer and a diversity antenna and/or a switch can be coupled between receive paths and a receive filter of the multiplexer. -
FIG. 17A is a schematic diagram of aradio frequency system 170 that includes multiplexers in signal paths between power amplifiers and an antenna. The illustratedradio frequency system 170 includes a low band path, a medium band path, and a high band path. In certain applications, a low band path can process radio frequency signals having a frequency of less than 1 GHz, a medium band path can process radio frequency signals having a frequency between 1 GHz and 2.2 GHz, and a high band path can process radio frequency signals having a frequency above 2.2 GHz. Any of themultiplexers radio frequency system 170 can be implemented in accordance with any suitable principles and advantages disclosed herein. - A frequency multiplexing circuit, such as a
diplexer 145, can be included between signal paths and theantenna 146. Such a frequency multiplexing circuit can serve as a frequency splitter for receive paths and a frequency combiner for transmit paths. Thediplexer 145 can frequency multiplex radio frequency signals that are relatively far away in frequency. Thediplexer 145 can be implemented with passive circuit elements having a relatively low loss. Thediplexer 145 can combine (for transmit) and separate (for receive) carrier aggregation signals. - As illustrated, the low band path includes a
power amplifier 171 configured to amplify a low band radio frequency signal, a bandselect switch 172, and amultiplexer 173. The bandselect switch 172 can electrically connect the output of thepower amplifier 171 to a selected transmit filter of themultiplexer 173. The selected transmit filter can be a band pass filter with a pass band corresponding to a frequency of an output signal of thepower amplifier 171. Themultiplexer 173 can include any suitable number of transmit filters and any suitable number of receive filters. Themultiplexer 173 can have the same number of transmit filters as receive filters in certain applications. In some instances, themultiplexer 173 can have a different number of transmit filters than receive filters. - As illustrated in
FIG. 17A , the medium band path includes apower amplifier 174 configured to amplify a medium band radio frequency signal, a bandselect switch 175, and amultiplexer 176. The bandselect switch 175 can electrically connect the output of thepower amplifier 174 to a selected transmit filter of themultiplexer 176. The selected transmit filter can be a band pass filter with a pass band corresponding to a frequency of an output signal of thepower amplifier 174. Themultiplexer 176 can include any suitable number of transmit filters and any suitable number of receive filters. Themultiplexer 176 can have the same number of transmit filters as receive filters in certain applications. In some instances, themultiplexer 176 can have a different number of transmit filters than receive filters. - In the illustrated
radio frequency system 170, the high band path includes apower amplifier 177 configured to amplify a high band radio frequency signal, a bandselect switch 178, and amultiplexer 179. The bandselect switch 178 can electrically connect the output of thepower amplifier 177 to a selected transmit filter of themultiplexer 179. The selected transmit filter can be a band pass filter with pass band corresponding to a frequency of an output signal of thepower amplifier 177. Themultiplexer 179 can include any suitable number of transmit filters and any suitable number of receive filters. Themultiplexer 179 can have the same number of transmit filters as receive filters in certain applications. In some instances, themultiplexer 179 can have a different number of transmit filters than receive filters. - A
select switch 180 can selectively provide a radio frequency signal from the medium band path or the high band path to thediplexer 145. Accordingly, theradio frequency system 170 can process carrier aggregation signals with either a low band and high band combination or a low band and medium band combination. -
FIG. 17B is a schematic diagram of anotherradio frequency system 182 that includes multiplexers in signal paths between power amplifiers and an antenna. Any of themultiplexers radio frequency system 170 can be implemented in accordance with any suitable principles and advantages disclosed herein. Theradio frequency system 182 is like theradio frequency system 170 ofFIG. 17A , except that theradio frequency system 182 includes switch-plexing features. Switch-plexing can be implemented in accordance with any suitable principles and advantages discussed herein. - Switch-plexing can implement on-demand multiplexing. Some radio frequency systems can operate in a single carrier mode for a majority of time (e.g., about 95% of the time) and in a carrier aggregation mode for a minority of the time (e.g., about 5% of the time). Switch-plexing can reduce loading in a single carrier mode in which the radio frequency system can operate for the majority of the time relative to a multiplexer that includes filters having a fixed connection at a common node. Such a reduction in loading can be more significant when there are a larger number of filters included in multiplexer.
- In the illustrated
radio frequency system 182,multiplexers diplexer 176 by way of aswitch 185. Theswitch 185 is configured as a multi-close switch that can have two or more throws active concurrently. Having multiple throws of theswitch 185 active concurrently can enable transmission and/or reception of carrier aggregation signals. Theswitch 185 can also have a single throw active during a single carrier mode. As illustrated, themultiplexer 183 includes a plurality of duplexers coupled to separate throws of theswitch 185. Similarly, the illustratedmultiplexer 184 includes a plurality of duplexers coupled to separate throws of theswitch 185. Alternatively, instead of duplexers being coupled to each throw theswitch 185 as illustrated inFIG. 17B , one or more individual filters of a multiplexer can be coupled to a dedicated throw of a switch coupled between the individual filters and a common node. For instance, in some applications, such a switch could have twice as many throws as the illustratedswitch 185. - The
switch 185 is coupled between filters of themultiplexers FIG. 17B illustrates that less than all of the filters of a multiplexer can be electrically connected to the common node concurrently. - In some instances, two or more throws of a switch coupled between a power amplifier and a multiplexer can be active concurrently. For example, in the
radio frequency system 182, two or more throws of the bandselect switch 175 and/or the bandselect switch 178 can be active concurrently in certain embodiments. -
FIG. 18A is a block diagram of afilter assembly 190 with different die that include acoustic wave resonators of filters according to an embodiment. As illustrated, thefilter assembly 190 includes aSAW die 191 and a BAW die 192 that are included on acommon substrate 193. A multiplexer in accordance with any suitable principles and advantages disclosed herein can include one filter with SAW resonators implemented on the SAW die 191 and another filter with BAW resonators implemented on the BAW die 192. The BAW resonators can be FBARs according to certain embodiments. The BAW resonators can be type II BAW resonators. The SAW resonators can be MPS SAW resonators in certain embodiments. According to some other embodiments, the SAW resonators can include TCSAW resonators and/or non-temperature compensated SAW resonators. Thesubstrate 193 can be a laminate substrate or any other suitable packaging substrate. - In certain instances, the BAW die 192 includes a single filter and the SAW die 191 includes a single filter. As one example, BAW resonators of the BAW die 192 can be arranged as the
BAW filter 12 of theduplexer 10 ofFIG. 1A and MPS SAW resonators of the SAW die 191 can be arranged as theMPS filter 14 of theduplexer 10 ofFIG. 1A . In some other instances, the BAW die 192 includes a single filter and the SAW die 191 includes two or more filters. For example, BAW resonators of the BAW die 192 can be arranged as theBAW filter 22 of thequadplexer 73 ofFIG. 7B and MPS SAW resonators of the SAW die 191 can be arranged as at least two of the MPS filters 26, 28, and 74 of thequadplexer 73 ofFIG. 7B . -
FIG. 18B is a block diagram of afilter assembly 194 with different die that include acoustic wave resonators of filters according to an embodiment. As illustrated, thefilter assembly 194 includes aSAW die 191, a first BAW die 192, and a second BAW die 195 on acommon substrate 193. A multiplexer in accordance with any suitable principles and advantages disclosed herein can include filters implemented on the SAW die 191, the first BAW die 192, and the second BAW die 195. For example, a triplexer can include a first filter on the first BAW die 192, a second filter on the second BAW die 195, and a third filter on the SAW die 191. In this example, the first filter can have the lowest passband and the third filter can have the highest passband. As another example, a quadplexer can include a first filter on the first BAW die 192, a second filter on the second BAW die 195, a third filter on the SAW die 191, and a fourth filter on the SAW die 191. In this example, the first filter can have the lowest passband, the second filter can have the next lowest passband, the third filter can have the next lowest passband, and the fourth filter can have the highest passband. Such a quadplexer can implement any suitable combination of features of thequadplexer 20 ofFIG. 2A and/or the quadplexer 90 ofFIG. 9A . -
FIG. 18C is a block diagram of afilter assembly 196 with different die that include acoustic wave resonators of filters according to an embodiment. As illustrated, thefilter assembly 196 includes a first SAW die 191, a second SAW die 197, a first BAW die 192, and a second BAW die 195 on acommon substrate 193. A multiplexer in accordance with any suitable principles and advantages disclosed herein can include filters implemented on the first SAW die 191, the second SAW die 197, the first BAW die 192, and the second BAW die 195. For example, a quadplexer can include a first filter on the first BAW die 192, a second filter on the second BAW die 195, a third filter on the first SAW die 191, and a fourth filter on the second SAW die 197. In this example, the first filter can have the lowest passband, the second filter can have the next lowest passband, the third filter can have the next lowest passband, and the fourth filter can have the highest passband. Such a quadplexer can implement any suitable combination of features of thequadplexer 20 ofFIG. 2A and/or the quadplexer 90 ofFIG. 9A . - The multiplexers discussed herein can be implemented in a variety of packaged modules. Some example packaged modules will now be discussed in which any suitable principles and advantages of the multiplexers can be implemented.
FIGS. 19 and 20 are schematic block diagrams of illustrative packaged modules according to certain embodiments. -
FIG. 19 is a schematic block diagram of amodule 200 that includes apower amplifier 201, aswitch 202, and amultiplexer 203 according to an embodiment. Themodule 200 can include a package that encloses the illustrated elements. In some instances, the package can enclosed additional circuit elements. Thepower amplifier 201, theswitch 202, and themultiplexer 203 can be disposed on a common packaging substrate. The packaging substrate can be a laminate substrate, for example. Theswitch 202 can be a multi-throw radio frequency switch. Theswitch 202 can electrically couple an output of thepower amplifier 201 to a selected transmit filter of themultiplexer 203. Theswitch 202 can electrically couple an input of a low noise amplifier (not illustrated) to a selected receive filter of themultiplexer 203. The low noise amplifier can be included in themodule 200 in some instances. According to some other instances, the low noise amplifier can be external to themodule 200. Themultiplexer 203 can include any suitable features of the multiplexers disclosed herein. -
FIG. 20 is a schematic block diagram of amodule 204 that includespower amplifiers switches multiplexer 207 according to an embodiment. Themultiplexer 207 can implement any suitable combination of features of the multiplexers disclosed herein. Themodule 204 is like themodule 200 ofFIG. 19 , except that themodule 204 includes anaddition power amplifier 204 and anadditional switch 206 and themultiplexer 207 can receive signals from thepower amplifiers switches power amplifiers multiplexer 207. Theswitches multiplexer 207. -
FIG. 21A is a schematic diagram of awireless communication 210 device that includes multiplexer(s) 213 in a radio frequencyfront end 212 according to an embodiment. The multiplexer(s) 213 can be implemented in accordance with any suitable principles and advantages discussed herein. Thewireless communication device 210 can be any suitable wireless communication device. For instance, awireless communication device 210 can be a mobile phone, such as a smart phone. As illustrated, thewireless communication device 210 includes anantenna 211, an RFfront end 212, atransceiver 214, aprocessor 215, amemory 216, and auser interface 217. Theantenna 211 can transmit RF signals provided by the RFfront end 212. Such RF signals can include carrier aggregation signals. Theantenna 211 can receive RF signals and provide the received RF signals to the RFfront end 212 for processing. Such RF signals can include carrier aggregation signals. - The RF
front end 212 can include one or more power amplifiers, one or more low noise amplifiers, one or more RF switches, one or more receive filters, one or more transmit filters, one or more duplex filters, one or more multiplexers, one or more frequency multiplexing circuits, the like, or any suitable combination thereof. The RFfront end 212 can transmit and receive RF signals associated with any suitable communication standards. The multiplexer(s) 213 can include any suitable combination of features discussed with reference to any embodiments discussed above. - The
transceiver 214 can provide RF signals to the RFfront end 212 for amplification and/or other processing. Thetransceiver 214 can also process an RF signal provided by a low noise amplifier of the RFfront end 212. Thetransceiver 214 is in communication with theprocessor 215. Theprocessor 215 can be a baseband processor. Theprocessor 215 can provide any suitable base band processing functions for thewireless communication device 210. Thememory 216 can be accessed by theprocessor 215. Thememory 216 can store any suitable data for thewireless communication device 210. Theuser interface 217 can be any suitable user interface, such as a display with touch screen capabilities. -
FIG. 21B is a schematic diagram of awireless communication device 220 that includes multiplexer(s) 213 in a radio frequencyfront end 212 andsecond filters 223 in a diversity receivemodule 222. Thewireless communication device 220 is like thewireless communication device 210 ofFIG. 21A , except that thewireless communication device 220 also includes diversity receive features. As illustrated inFIG. 21B , thewireless communication device 220 includes adiversity antenna 221, adiversity module 222 configured to process signals received by thediversity antenna 221 and including multiplexer(s) 223, and a transceiver 224 in communication with both the radio frequencyfront end 212 and the diversity receivemodule 222. The multiplexer(s) 223 can include any suitable combination of features discussed with reference to any embodiments discussed above. - Any of the embodiments described above can be implemented in association with mobile devices such as cellular handsets. The principles and advantages of the embodiments can be used for any systems or apparatus, such as any uplink wireless communication device, that could benefit from any of the embodiments described herein. The teachings herein are applicable to a variety of systems. Although this disclosure includes example embodiments, the teachings described herein can be applied to a variety of structures. Any of the principles and advantages discussed herein can be implemented in association with RF circuits configured to process signals having a frequency in a range from about 30 kHz to 300 GHz, such as in a frequency range from about 400 MHz to 8.5 GHz. Acoustic wave filters disclosed herein can filter RF signals at frequencies up to and including millimeter wave frequencies.
- Aspects of this disclosure can be implemented in various electronic devices. Examples of the electronic devices can include, but are not limited to, consumer electronic products, parts of the consumer electronic products such as packaged radio frequency modules, uplink wireless communication devices, wireless communication infrastructure, electronic test equipment, etc. Examples of the electronic devices can include, but are not limited to, a mobile phone such as a smart phone, a wearable computing device such as a smart watch or an ear piece, a telephone, a television, a computer monitor, a computer, a modem, a hand-held computer, a laptop computer, a tablet computer, a microwave, a refrigerator, a vehicular electronics system such as an automotive electronics system, a robot such as an industrial robot, an Internet of things device, a stereo system, a digital music player, a radio, a camera such as a digital camera, a portable memory chip, a home appliance such as a washer or a dryer, a peripheral device, a wrist watch, a clock, etc. Further, the electronic devices can include unfinished products.
- Unless the context indicates otherwise, throughout the description and the claims, the words “comprise,” “comprising,” “include,” “including” and the like are to generally be construed in an inclusive sense, as opposed to an exclusive or exhaustive sense; that is to say, in the sense of “including, but not limited to.” Conditional language used herein, such as, among others, “can,” “could,” “might,” “may,” “e.g.,” “for example,” “such as” and the like, unless specifically stated otherwise, or otherwise understood within the context as used, is generally intended to convey that certain embodiments include, while other embodiments do not include, certain features, elements and/or states. The word “coupled”, as generally used herein, refers to two or more elements that may be either directly connected, or connected by way of one or more intermediate elements. Likewise, the word “connected”, as generally used herein, refers to two or more elements that may be either directly connected, or connected by way of one or more intermediate elements. Additionally, the words “herein,” “above,” “below,” and words of similar import, when used in this application, shall refer to this application as a whole and not to any particular portions of this application. Where the context permits, words in the above Detailed Description using the singular or plural number may also include the plural or singular number respectively.
- While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the disclosure. Indeed, the novel resonators, devices, modules, apparatus, methods, and systems described herein may be embodied in a variety of other forms. Furthermore, various omissions, substitutions and changes in the form of the resonators, devices, modules, apparatus, methods, and systems described herein may be made without departing from the spirit of the disclosure. For example, while blocks are presented in a given arrangement, alternative embodiments may perform similar functionalities with different components and/or circuit topologies, and some blocks may be deleted, moved, added, subdivided, combined, and/or modified. Each of these blocks may be implemented in a variety of different ways. Any suitable combination of the elements and/or acts of the various embodiments described above can be combined to provide further embodiments. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the disclosure.
Claims (20)
1. A multiplexer with acoustic wave filters for filtering radio frequency signals, the multiplexer comprising:
a first acoustic wave filter coupled to a common node and having a first pass band, the first acoustic wave filter including bulk acoustic wave resonators;
a second acoustic wave filter coupled to the common node and having a second pass band;
a third acoustic wave filter coupled to the common node and having a third pass band; and
a fourth acoustic wave filter coupled to the common node and having a fourth pass band, the fourth acoustic wave filter including surface acoustic wave resonators, the first pass band having a lower pass band than the second, third and fourth acoustic wave filters.
2. The multiplexer of claim 1 wherein the fourth pass band is a highest pass band of the first, second and third acoustic wave filters.
3. The multiplexer of claim 1 wherein the surface acoustic wave resonators include multilayer piezoelectric substrate surface acoustic wave resonators.
4. The multiplexer of claim 1 wherein the first acoustic wave filter and third acoustic wave filter each include multilayer piezoelectric substrate surface acoustic wave resonators.
5. The multiplexer of claim 1 wherein the surface acoustic wave resonators include temperature compensated surface acoustic wave resonators.
6. The multiplexer of claim 1 wherein the second acoustic wave filter includes second bulk acoustic wave resonators, the third acoustic wave filter includes second surface acoustic wave resonators, and the second pass band being below the third pass band.
7. The multiplexer of claim 1 wherein the second acoustic wave filter includes second bulk acoustic wave resonators, the third acoustic wave filter includes third bulk acoustic wave resonators, and the second pass band is below the third pass band.
8. The multiplexer of claim 1 wherein the second acoustic wave filter includes second surface acoustic wave resonators, the third acoustic wave filter includes third surface acoustic wave resonators, and the second pass band is below the third pass band.
9. The multiplexer of claim 1 wherein the multiplexer is configured to support a carrier aggregation of at least two frequency bands.
10. The multiplexer of claim 1 wherein the multiplexer is configured to support a carrier aggregation of at least three frequency bands.
11. The multiplexer of claim 1 wherein the bulk acoustic wave resonators have spurious modes below the first pass band.
12. The multiplexer of claim 1 wherein the surface acoustic wave resonators have a gamma of at least 0.85 in the first pass band.
13. The multiplexer of claim 1 wherein spurious modes of the bulk acoustic wave resonators are outside of the fourth pass band.
14. The multiplexer of claim 1 wherein the bulk acoustic wave resonators have a substantially constant gamma in the fourth pass band.
15. A wireless communication device comprising:
an antenna; and
a radio frequency front end including a multiplexer in communication with the antenna, the multiplexer including:
a first acoustic wave filter coupled to a common node and having a first pass band, the first acoustic wave filter including bulk acoustic wave resonators;
a second acoustic wave filter coupled to the common node and having a second pass band;
a third acoustic wave filter coupled to the common node and having a third pass band; and
a fourth acoustic wave filter coupled to the common node and having a fourth pass band, the fourth acoustic wave filter including surface acoustic wave resonators, the first pass band having a lower pass band than the second, third and fourth acoustic wave filters.
16. The wireless communication device of claim 15 wherein the radio frequency front end includes a frequency multiplexing circuit coupled between the common node of the multiplexer and the antenna.
17. The wireless communication device of claim 15 further comprising an antenna switch coupled between the common node of the multiplexer and the antenna.
18. A packaged radio frequency module comprising:
a multiplexer including:
a first acoustic wave filter coupled to a common node and having a first pass band, the first acoustic wave filter including bulk acoustic wave resonators;
a second acoustic wave filter coupled to the common node and having a second pass band;
a third acoustic wave filter coupled to the common node and having a third pass band; and
a fourth acoustic wave filter coupled to the common node and having a fourth pass band, the fourth acoustic wave filter including surface acoustic wave resonators, the first pass band having a lower pass band than the second, third and fourth acoustic wave filters;
a multi-throw radio frequency switch coupled to the multiplexer; and
a package enclosing the multiplexer and the multi-throw radio frequency switch.
19. The packaged radio frequency module of claim 18 further comprising a power amplifier enclosed within the package, the power amplifier configured to provide a radio frequency signal to the multiplexer.
20. The packaged radio frequency module of claim 18 further comprising a low noise amplifier enclosed within the package, the low noise amplifier configured to receive a radio frequency signal to the multiplexer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/138,012 US20210119650A1 (en) | 2019-05-01 | 2020-12-30 | Multiplexer with acoustic wave resonators |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962841647P | 2019-05-01 | 2019-05-01 | |
US201962841663P | 2019-05-01 | 2019-05-01 | |
US16/863,030 US11658688B2 (en) | 2019-05-01 | 2020-04-30 | Multiplexer with bulk acoustic wave filter and multilayer piezoelectric substrate filter |
US17/138,012 US20210119650A1 (en) | 2019-05-01 | 2020-12-30 | Multiplexer with acoustic wave resonators |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/863,030 Continuation US11658688B2 (en) | 2019-05-01 | 2020-04-30 | Multiplexer with bulk acoustic wave filter and multilayer piezoelectric substrate filter |
Publications (1)
Publication Number | Publication Date |
---|---|
US20210119650A1 true US20210119650A1 (en) | 2021-04-22 |
Family
ID=73045853
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/863,030 Active 2040-05-21 US11658688B2 (en) | 2019-05-01 | 2020-04-30 | Multiplexer with bulk acoustic wave filter and multilayer piezoelectric substrate filter |
US17/138,012 Pending US20210119650A1 (en) | 2019-05-01 | 2020-12-30 | Multiplexer with acoustic wave resonators |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/863,030 Active 2040-05-21 US11658688B2 (en) | 2019-05-01 | 2020-04-30 | Multiplexer with bulk acoustic wave filter and multilayer piezoelectric substrate filter |
Country Status (1)
Country | Link |
---|---|
US (2) | US11658688B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11394407B2 (en) * | 2020-03-27 | 2022-07-19 | Murata Manufacturing Co., Ltd. | Radio frequency module and communication device |
US11394406B2 (en) * | 2020-03-27 | 2022-07-19 | Murata Manufacturing Co., Ltd. | Radio frequency module and communication device |
US11658688B2 (en) | 2019-05-01 | 2023-05-23 | Skyworks Solutions, Inc. | Multiplexer with bulk acoustic wave filter and multilayer piezoelectric substrate filter |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021145282A (en) * | 2020-03-13 | 2021-09-24 | 株式会社村田製作所 | High frequency module and communication device |
CN117178481A (en) * | 2021-07-21 | 2023-12-05 | 华为技术有限公司 | Radio frequency filter and electronic equipment |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6255916B1 (en) * | 1993-05-27 | 2001-07-03 | Fujitsu Limited | Resonator-type surface-acoustic-wave filter for reducing the signal strength of a spurious peak |
US6766149B1 (en) * | 1998-12-22 | 2004-07-20 | Hitachi Media Electronics Co., Ltd. | Mobile radio terminal and surface acoustic wave antenna duplexer |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004031397A1 (en) | 2004-06-29 | 2006-01-26 | Epcos Ag | duplexer |
KR100719123B1 (en) | 2006-07-27 | 2007-05-18 | 삼성전자주식회사 | Multi band filter module and manufacture method of the same |
DE102010046677B4 (en) | 2010-09-27 | 2017-10-12 | Snaptrack Inc. | circuitry |
DE102011114642B4 (en) | 2011-09-30 | 2015-07-30 | Epcos Ag | Module and chip |
DE102012108035B4 (en) * | 2012-08-30 | 2016-06-16 | Epcos Ag | Capacitor with improved linear behavior |
US10778180B2 (en) * | 2015-12-10 | 2020-09-15 | Qorvo Us, Inc. | Bulk acoustic wave resonator with a modified outside stack portion |
US10541673B2 (en) | 2016-10-28 | 2020-01-21 | Skyworks Solutions, Inc. | Acoustic wave filter including two types of acoustic wave resonators |
DE102018102891A1 (en) * | 2017-02-13 | 2018-08-16 | Murata Manufacturing Co., Ltd. | Multiplexer, transmission device and receiving device |
US10826543B2 (en) * | 2018-07-27 | 2020-11-03 | Qualcomm Incorporated | Filter circuit configuration for carrier aggregation |
US11658688B2 (en) | 2019-05-01 | 2023-05-23 | Skyworks Solutions, Inc. | Multiplexer with bulk acoustic wave filter and multilayer piezoelectric substrate filter |
-
2020
- 2020-04-30 US US16/863,030 patent/US11658688B2/en active Active
- 2020-12-30 US US17/138,012 patent/US20210119650A1/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6255916B1 (en) * | 1993-05-27 | 2001-07-03 | Fujitsu Limited | Resonator-type surface-acoustic-wave filter for reducing the signal strength of a spurious peak |
US6766149B1 (en) * | 1998-12-22 | 2004-07-20 | Hitachi Media Electronics Co., Ltd. | Mobile radio terminal and surface acoustic wave antenna duplexer |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11658688B2 (en) | 2019-05-01 | 2023-05-23 | Skyworks Solutions, Inc. | Multiplexer with bulk acoustic wave filter and multilayer piezoelectric substrate filter |
US11394407B2 (en) * | 2020-03-27 | 2022-07-19 | Murata Manufacturing Co., Ltd. | Radio frequency module and communication device |
US11394406B2 (en) * | 2020-03-27 | 2022-07-19 | Murata Manufacturing Co., Ltd. | Radio frequency module and communication device |
US20220311456A1 (en) * | 2020-03-27 | 2022-09-29 | Murata Manufacturing Co., Ltd. | Radio frequency module and communication device |
US11881876B2 (en) * | 2020-03-27 | 2024-01-23 | Murata Manufacturing Co., Ltd. | Radio frequency module and communication device |
Also Published As
Publication number | Publication date |
---|---|
US11658688B2 (en) | 2023-05-23 |
US20200358464A1 (en) | 2020-11-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11967947B2 (en) | Acoustic wave filter including two types of acoustic wave resonators | |
JP6516018B2 (en) | Switch module | |
US20210119650A1 (en) | Multiplexer with acoustic wave resonators | |
US11824515B2 (en) | Acoustic wave device with spinel layer and temperature compensation layer | |
US11799447B2 (en) | Acoustic wave resonator with multiple resonant frequencies | |
US11838007B2 (en) | Multiplexer including acoustic wave filter with transmission line between resonators | |
US20240128949A1 (en) | Acoustic wave resonator with transverse spurious mode for filter steepness | |
US20230387887A1 (en) | Multiplexer with reduced phase spreading | |
US20200366268A1 (en) | Rayleigh mode surface acoustic wave resonator | |
US20230008248A1 (en) | Multimode longitudinally coupled surface acoustic wave resonator with modulated pitch | |
US11742829B2 (en) | Multiplexer with filter having increased reflection characteristic | |
US20220311410A1 (en) | Raised frame bulk acoustic wave devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STPP | Information on status: patent application and granting procedure in general |
Free format text: APPLICATION DISPATCHED FROM PREEXAM, NOT YET DOCKETED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |