US20200321166A1 - Variable radio frequency micro-electromechanical switch - Google Patents

Variable radio frequency micro-electromechanical switch Download PDF

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Publication number
US20200321166A1
US20200321166A1 US16/303,639 US201716303639A US2020321166A1 US 20200321166 A1 US20200321166 A1 US 20200321166A1 US 201716303639 A US201716303639 A US 201716303639A US 2020321166 A1 US2020321166 A1 US 2020321166A1
Authority
US
United States
Prior art keywords
line
dome
mems membrane
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US16/303,639
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English (en)
Inventor
Romain Stefanini
Ling Yan Zhang
Pierre Blondy
Fabien Roubeau
Kevin Nadaud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Airmems
Centre National de la Recherche Scientifique CNRS
Universite de Limoges
Original Assignee
Airmems
Centre National de la Recherche Scientifique CNRS
Universite de Limoges
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Airmems, Centre National de la Recherche Scientifique CNRS, Universite de Limoges filed Critical Airmems
Assigned to UNIVERSITE DE LIMOGES, AIRMEMS, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE reassignment UNIVERSITE DE LIMOGES ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BLONDY, PIERRE, Nadaud, Kevin, ROUBEAU, Fabien, STEFANINI, Romain, ZHANG, Ling Yan
Publication of US20200321166A1 publication Critical patent/US20200321166A1/en
Abandoned legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0084—Switches making use of microelectromechanical systems [MEMS] with perpendicular movement of the movable contact relative to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0089—Providing protection of elements to be released by etching of sacrificial element; Avoiding stiction problems, e.g. of movable element to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H01H2059/0072—Electrostatic relays; Electro-adhesion relays making use of micromechanics with stoppers or protrusions for maintaining a gap, reducing the contact area or for preventing stiction between the movable and the fixed electrode in the attracted position

Definitions

  • the present invention generally relates to a radiofrequency micro-electromechanical switch (generally referred to using the acronyms RF MEMS) as well as to a method allowing such a switch to be produced.
  • RF MEMS radiofrequency micro-electromechanical switch
  • a switch refers, within the meaning of the present invention, to an electrical or electronic component that, under the effect of an outside command, is capable of changing the electrical power level that it conveys over at least 2 distinct states.
  • RF MEMS switches are among serious candidates making it possible to meet this need, in particular owing to their low electrical losses, highly linear behavior and low consumption relative to traditional semiconductors.
  • RF MEMS switches can be combined in the form of digital matrices, this combination making it possible to obtain a device having a well-defined and precise unitary variation, a high linearity of the electrical response, and low electrical losses.
  • Other technologies such as the stack of fixed-capacity MOS transistors, can be used for the same purpose.
  • These MOS transistors can be made at low costs and are easy to integrate, but have a moderate quality factor Q, i.e., the inverse of the product of the serial resistance by the minimum capacity value that it can reach is moderate. The higher this factor Q is, the better performing the switch is considered to be.
  • patent application US20150235771 describes a MEMS capacitance made by thin layers having an RF line, as well as control electrodes inserted into the substrate, a MEMS membrane able to move when a voltage is applied on the control electrodes or the RF line, the MEMS membrane being inserted into a hermetic cavity, with a control electrode placed above the cavity and a dielectric layer gripping the assembly.
  • this configuration has the drawback of inducing a high resistivity of the RF line and losses due to stray capacity.
  • the production of this MEMS uses many process steps, which makes it complex and expensive to manufacture.
  • radiofrequency micro-electromechanical switch comprising:
  • the positioning of the second RF line allows the use of RF lines having a greater thickness (for example around 5 microns) relative to the RF lines of the state of the art.
  • This greater thickness makes it possible to obtain very small serial resistances, which increases the RF performances of the component.
  • this configuration makes it possible to create a switch having low stray capacitances owing to the presence of an air gap below the RF lines.
  • the configuration of the switch according to the invention is essentially compact, and this compactness makes it possible to reduce the temperature sensitivity of the switch, limit the manufacturing costs and facilitate the integration of switch matrices into RF circuits, for example.
  • the dome of the switch according to the invention may further be covered by a discontinuous metal layer, covering its outer face.
  • Discontinuous refers to a layer comprising disjointed patterns (dots, lines, geometric shapes, etc.), which may or may not be connected to one another. Furthermore, some patterns may be connected to the first RF line or the second RF line.
  • the MEMS membrane which may have any shape, may further comprise a dielectric layer and/or several additional metal layers. This dielectric may for example be chosen from the list made up of alumina, silicon oxide and silicon nitride.
  • the second section of the second RF line may be at least partially inserted into said dielectric layer forming the dome.
  • Said configuration may in particular make it possible to obtain a higher capacitance value when the membrane is deflected upward such that it comes into contact with the lower surface of the dome.
  • the switch according to the invention further comprises:
  • the electrostatic-type activation of the MEMS membrane can therefore be done by two different means:
  • the switch according to the invention may comprise one or several upper activation electrodes, each of them being electrically connected to a central electrode by means of a metal via.
  • the switch according to the invention may comprise one or several stop pins arranged in the cavity so as to prevent any contact between the central or lower activation electrodes and the MEMS membrane when it is deflected.
  • this pin may be located:
  • the switch according to the invention may be used either as a switched capacitance, or as an ohmic switch.
  • the dome includes at least one opening in which a metal pin is housed that is formed in the extension of said second section of the second RF line, such that said MEMS membrane and said second section of the second RF line are able to come into contact when said MEMS membrane is activated by an upper or central activation electrode so as to thus form an ohmic contact.
  • the dome comprises at least one dielectric layer separating the MEMS membrane and the second section of the second RF line, so as to form a Metal-Dielectric-Metal capacitance.
  • a layer of metal can advantageously be arranged below said dielectric layer and comes into contact with the MEMS membrane when said membrane is deflected toward the dome.
  • the switch according to the invention can therefore be used either as capacitance, or as ohmic contact, these embodiments each benefiting from the increase in the RF properties contributed by the positioning of said second RF line on the upper part of the dome.
  • the variable distance between said MEMS membrane and the second section of the second RF line makes it possible to vary the value of the electric capacitance and modifies the power insulation of the device.
  • the switch when the switch is of the ohmic type, it insulates RF current when the membrane is not activated and allows the current to pass when it is activated, like a switch.
  • the dome can be hermetically sealed by the metal making up one of the RF lines or both RF lines and the cavity can contain a gas (for example air, N 2 , Ar or O 2 ) or vacuum (primary or secondary vacuum).
  • a gas for example air, N 2 , Ar or O 2
  • vacuum primary or secondary vacuum
  • the present invention also relates to a radiofrequency micro-electromechanical microsystem (RF MEMS) comprising a switch according to the invention.
  • RF MEMS radiofrequency micro-electromechanical microsystem
  • the present invention also relates to a method for manufacturing a switch according to the invention, comprising the following steps:
  • the second RF line thus formed comprises a first section in contact with the essentially planar face of the substrate and a second section adjacent to said first section.
  • the openings formed during step d) are lateral openings, i.e., openings that are not across from the upper face of the MEMS membrane.
  • the elimination of the sacrificial layers can be done by dry etching or wet etching.
  • wet etching the MEMS membrane is contained in a liquid, which must go from the liquid state to the gaseous state: this transformation can be done by a critical point dryer (usually referred to using the acronym CPD).
  • FIG. 1 shows a diagram of a switch according to the invention in top view ( FIG. 1 a ), in sectional view along line AA′ ( FIG. 1 b ) and in sectional view along line BB′ ( FIG. 1 c );
  • FIG. 2 shows a schematic sectional view along line AA′ of a switch according to the invention in the case where it is used as capacitance and where the second RF line is inserted partially into the dielectric layer of the dome;
  • FIG. 3 shows a schematic sectional view along line AA′ of a switch according to the invention in the case where it is used as capacitance and having two activation electrodes arranged on the dome and a metal layer arranged in the dielectric layer of the dome;
  • FIG. 4 shows a diagram of a switch according to the invention in the case where it is used as ohmic contactor and has upper and central electrodes connected to one another, with a sectional view along line AA′ ( FIG. 4 a ) and a sectional view along line BB′ ( FIG. 4 b );
  • FIG. 5 shows a schematic sectional view along line AA′ of a switch according to the invention in the case where it is used as capacitive contact and has upper electrodes and a stop pin;
  • FIG. 6 shows a schematic sectional view along line AA′ of a switch according to the invention in the case where it is used as ohmic switch and has central and lower electrodes and a stop pin;
  • FIG. 7 shows schematic views of different successive steps a) to g) of an embodiment of a switch according to the invention, with a sectional view along line AA′ ( FIG. 7 a ) and a sectional view along line BB′ ( FIG. 7 b ).
  • FIG. 1 shows a diagram of a switch according to the invention in top view.
  • the first RF line 3 is electrically connected to the MEMS membrane 5 by anchors 51 , thus allowing an RF signal passing through the MEMS membrane 5 to propagate in the first RF line 3 .
  • the second RF line 4 has a first section 41 in contact with the face 21 of the substrate 2 and a second section 42 partially covering the dome 6 . These two sections are electrically connected to one another, thus allowing an RF signal passing through the first section 41 to propagate in the second section 42 ( FIG. 1 a ).
  • the stack comprising the MEMS membrane 5 , the dielectric (comprising the dielectric layer of the dome as well as any layer of air between the membrane 5 and the dielectric layer of the dome if the membrane 5 is not completely deflected), and the second section 42 of the second RF line 4 forms the capacitance.
  • the signal propagates from one RF line to the other through this stack.
  • the capacitance is higher.
  • the switch according to the invention can therefore be used as switched capacitance. In this particular case, the activation of the membrane is done by the RF line.
  • the dome 6 of FIG. 1 comprises at least one dielectric layer and is covered by a layer of metal that can be discontinuous, the component patterns of which are connected to the first RF line 3 ( FIG. 1 b ).
  • the component metal of the RF lines 3 and 4 makes it possible to guarantee the hermiticity of the cavity.
  • the dome 6 has several anchor points 63 on the planar face 21 of the substrate 2 and three openings 64 , 65 able to allow the elimination of sacrificial layers S 1 , S 2 having been used to develop the MEMS membrane 5 and the dome 6 (cf. description of FIGS. 7 a and 7 b below): two openings 64 closed by the first RF line 3 (visible in FIGS. 1 a and 1 b ) and an opening 65 closed by the second RF line 4 (visible in FIGS. 1 a and 1 c ). As shown in FIG. 1 b (for the opening 64 ) and FIG. 1 c (for the opening 65 ), these openings are lateral openings, which are not across from the upper face 51 of the MEMS membrane 5 .
  • FIG. 2 shows a schematic sectional view of a switch according to the invention in the case where it is used as capacitance and where the second RF line 4 is inserted partially into the dielectric layer of the dome 6 .
  • the second section 42 of the second RF line 4 is still separated from the MEMS membrane by at least one dielectric layer 8 . The more deeply the RF line is inserted into the dome 6 , the higher the maximum capacitance is, obtained when the MEMS membrane 5 comes into contact with the dome 6 .
  • FIG. 3 shows a schematic sectional view of a switch according to the invention in the case where it is used as capacitance and where a metal layer 8 is arranged below the dielectric layer.
  • FIG. 4 shows a schematic sectional view of a switch according to the invention in the case where it is used as ohmic contact and has upper 71 and central 72 electrodes.
  • each of the upper activation electrodes 71 is connected to a central electrode 72 by a metal via 75 passing through the dome 6 ( FIG. 4 a ).
  • the activation electrodes are essential in the case of the ohmic contact, the activation of the membrane not being able to be done via the RF lines that come into contact.
  • the ohmic contact of FIG. 4 is done via a metal contact pin 91 passing through the dome and being in contact with the second RF line 4 .
  • a metal contact pin 91 passing through the dome and being in contact with the second RF line 4 .
  • FIG. 5 shows a schematic sectional view of a switch according to the invention in the case where it is used as variable capacitance and where it has lower electrodes 73 and a stop pin 9 .
  • This pin here may either be placed below the MEMS membrane 5 and in contact with said membrane or on the face 21 of the substrate 2 and in contact with said face.
  • the pin limits the deflection of the MEMS membrane 5 toward the lower electrodes 73 , leaving an air gap between the MEMS membrane 5 and the lower electrodes 73 . Without said pin, the lower electrodes 73 could come into contact with the membrane, which would charge the membrane 5 and cause the device to fail.
  • FIG. 6 shows a schematic sectional view along line AA′ of a switch according to the invention in the case where it is used as ohmic contact and has central 72 and lower 73 electrodes.
  • the activation electrodes 71 , 73 cannot deflect the membrane 5 toward them.
  • adding lower electrodes 73 makes it possible to deflect the membrane 5 toward the substrate 2 and increase the amplitude of the variations in electric properties of the device.
  • FIG. 7 shows schematic views of the different successive steps a) to g) to produce a switch according to the invention, with a sectional view along line AA′ ( FIG. 7 a ) and a sectional view along line BB′ ( FIG. 7 b ).
  • FIGS. 7 a and 7 b the diagrams corresponding to step (a) show a first sacrificial layer S 1 deposited on the substrate 2 after shaping thereof.
  • FIGS. 7 a and 7 b the diagrams corresponding to step (b) show a first metal layer M 1 deposited on the first sacrificial layer S 1 .
  • This first metal layer M 1 is shaped by etching (dry or wet) to create the first RF line 3 and the MEMS membrane 5 , these two components being electrically connected to one another by the anchors 51 of the MEMS membrane.
  • FIGS. 7 a and 7 b the diagrams corresponding to step (c) show the second sacrificial layer S 2 after shaping thereof.
  • FIGS. 7 a and 7 b the diagrams corresponding to step (d) show the dielectric layer after shaping thereof to create the dome 6 .
  • the dome 6 is anchored in the substrate 2 and allows the first RF line 3 to pass in order to allow the connection with the MEMS membrane 5 .
  • the openings 64 , 65 allow the dry etching or wet etching of the sacrificial layers, wet etching requiring an additional step for critical point dryer.
  • FIGS. 7 a and 7 b the diagrams corresponding to step (e) show the result of the step for eliminating the sacrificial layers.
  • step f) is a step for depositing a second metal layer M 2 , said layer being intended to serve as a base for forming the different patterns of the following step.
  • said second metal layer M 2 is shaped by lift-off and/or etching (dry or wet) in order to create the second RF line 4 and to close the openings 64 , 65 formed during the preceding step, in a manner.
  • This second RF line 4 is broken down into a first section 41 in contact with the planar face 21 of the substrate 2 , and a second section 42 adjacent to the first section 41 (i.e., that is electrically connected to it). At least one of said second RF line 4 and said first RF line 3 closes the lateral openings 64 , 65 , thus creating a hermetic cavity C that encapsulates the MEMS membrane.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
US16/303,639 2016-05-20 2017-05-16 Variable radio frequency micro-electromechanical switch Abandoned US20200321166A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1654558A FR3051458B1 (fr) 2016-05-20 2016-05-20 Commutateur variable microelectromecanique radiofrequence
FR1654558 2016-05-20
PCT/FR2017/051178 WO2017198943A1 (fr) 2016-05-20 2017-05-16 Commutateur variable microélectromécanique radiofréquence

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2017/051178 A-371-Of-International WO2017198943A1 (fr) 2016-05-20 2017-05-16 Commutateur variable microélectromécanique radiofréquence

Related Child Applications (1)

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US17/563,021 Division US20220199333A1 (en) 2016-05-20 2021-12-27 Variable radio frequency micro-electromechanical switch

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US20200321166A1 true US20200321166A1 (en) 2020-10-08

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US16/303,639 Abandoned US20200321166A1 (en) 2016-05-20 2017-05-16 Variable radio frequency micro-electromechanical switch
US17/563,021 Pending US20220199333A1 (en) 2016-05-20 2021-12-27 Variable radio frequency micro-electromechanical switch

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US17/563,021 Pending US20220199333A1 (en) 2016-05-20 2021-12-27 Variable radio frequency micro-electromechanical switch

Country Status (8)

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US (2) US20200321166A1 (zh)
EP (1) EP3459101B1 (zh)
CN (1) CN109314018B (zh)
CA (1) CA3024836C (zh)
ES (1) ES2906794T3 (zh)
FR (1) FR3051458B1 (zh)
IL (1) IL263104A (zh)
WO (1) WO2017198943A1 (zh)

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6570750B1 (en) * 2000-04-19 2003-05-27 The United States Of America As Represented By The Secretary Of The Air Force Shunted multiple throw MEMS RF switch
US7045459B2 (en) * 2002-02-19 2006-05-16 Northrop Grumman Corporation Thin film encapsulation of MEMS devices
EP1343190A3 (en) * 2002-03-08 2005-04-20 Murata Manufacturing Co., Ltd. Variable capacitance element
WO2004019362A1 (en) * 2002-08-26 2004-03-04 International Business Machines Corporation Diaphragm activated micro-electromechanical switch
JP4107329B2 (ja) * 2003-09-08 2008-06-25 株式会社村田製作所 可変容量素子
JP4544880B2 (ja) * 2003-09-25 2010-09-15 京セラ株式会社 微小電気機械式装置の封止方法
KR20050068584A (ko) * 2003-12-30 2005-07-05 매그나칩 반도체 유한회사 고주파 소자의 스위치 형성방법
CN100389474C (zh) * 2006-04-17 2008-05-21 东南大学 射频微电子机械双膜桥并联电容式开关及其制造方法
CN102001616A (zh) * 2009-08-31 2011-04-06 上海丽恒光微电子科技有限公司 装配和封装微型机电系统装置的方法
KR20110054710A (ko) * 2009-11-18 2011-05-25 한국전자통신연구원 소자 패키지 및 그 제조 방법
CN102543591B (zh) * 2010-12-27 2014-03-19 上海丽恒光微电子科技有限公司 Mems开关及其制作方法
FR2994332B1 (fr) * 2012-07-31 2015-05-15 Commissariat Energie Atomique Procede d'encapsulation d'un dispositif microelectronique
US9443658B2 (en) 2012-08-10 2016-09-13 Cavendish Kinetics, Inc. Variable capacitor compromising MEMS devices for radio frequency applications
CN105122402B (zh) * 2013-04-04 2018-12-07 卡文迪什动力有限公司 具有高线性度的mems数字可变电容器设计

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Publication number Publication date
EP3459101B1 (fr) 2021-12-01
WO2017198943A1 (fr) 2017-11-23
EP3459101A1 (fr) 2019-03-27
US20220199333A1 (en) 2022-06-23
CN109314018B (zh) 2020-06-30
ES2906794T3 (es) 2022-04-20
CN109314018A (zh) 2019-02-05
CA3024836A1 (fr) 2017-11-23
FR3051458B1 (fr) 2020-09-04
FR3051458A1 (fr) 2017-11-24
IL263104A (en) 2019-01-31
CA3024836C (fr) 2023-08-01

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