US20190371723A1 - Integrated Circuitry and Methods for Manufacturing Same - Google Patents
Integrated Circuitry and Methods for Manufacturing Same Download PDFInfo
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- US20190371723A1 US20190371723A1 US16/545,890 US201916545890A US2019371723A1 US 20190371723 A1 US20190371723 A1 US 20190371723A1 US 201916545890 A US201916545890 A US 201916545890A US 2019371723 A1 US2019371723 A1 US 2019371723A1
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- electronic component
- monolithic electronic
- conductive material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49855—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers for flat-cards, e.g. credit cards
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present disclosure in various embodiments relates to integrated circuitry and methods for manufacturing same. Specific embodiments of the disclosure relate to cellulose-based integrated circuitry and methods for manufacturing same. The technology relates to that disclosed in issued US patent 8 , 047 , 443 entitled “Data Storage Devices” to DePaula.
- cellulose based documents such as, for example, papers. These papers take the form of newspapers, correspondence, mailers, leaflets, etc., and they have been used throughout history to correspond and transmit information. Recently, information in addition to what is printed on the paper document can be transmitted as well. Part of this transmission is the use of circuitry integrated into the paper itself.
- the present disclosure provides embodiments of integrated circuitry as well as methods for making same that may be part of cellulosebased documents.
- a process for manufacturing cellulose based integrated circuitry construction comprising providing a first substrate having one surface opposing another surface; providing a plurality of vias within the substrate and between the surfaces; providing a first conductive material to the one surface of the substrate; providing adhesive to the other surface; providing a monolithic electronic component to the other surface; providing a second conductive material to the other surface and the monolithic electronic component; providing a backing material to the other surface of the substrate; and providing a second substrate to the backing material to form the construction.
- a cellulose based integrated circuitry construction comprising a first cellulose substrate having one surface opposing another surface and defining a plurality of vias between the surfaces; a first conductive material along the one surface and extending through the vias; a monolithic electronic component on the other surface; and a second conductive material along the other surface and conductively connecting the first conductive material with the monolithic electronic component.
- a cellulose based integrated circuitry construction comprising a pair of cellulose substrates having a monolithic electronic component therebetween;
- the backing material defining a recess and receiving the monolithic electronic component.
- FIGS. 1A and B are depictions of a substrate and cross section of same at a stage of processing according to an embodiment of the disclosure.
- FIGS. 2A and 2B depict the substrate of FIGS. 1A and 1B at a subsequent stage of processing according to an embodiment of the disclosure.
- FIGS. 3A and 3B depict the substrate of FIGS. 2A and 2B at a subsequent stage of processing according to an embodiment of the disclosure.
- FIGS. 4A and 4B depict the substrate of FIGS. 3A and 3B at a subsequent stage of processing according to an embodiment of the disclosure.
- FIGS. 5A, 5B, and 5C depict the substrate of FIGS. 4A and 4B at a subsequent stage of processing according to an embodiment of the disclosure.
- FIGS. 6A, 6B, and 6C depict the substrate of FIGS. 5A, 5B, and 5C at a subsequent stage of processing according to an embodiment of the disclosure.
- FIGS. 7A, 7B, 7C, and 7D depict the substrate of FIGS. 6A, 6B , and 6 C at a subsequent stage of processing according to an embodiment of the disclosure.
- FIGS. 8A, 8B, and 8C depict the substrate of FIGS. 7A, 7B, 7C , and 7 D at a subsequent stage of processing according to an embodiment of the disclosure.
- FIGS. 9A, 9B, and 9C depict the substrate of FIGS. 8A, 8B, and 8C at a subsequent stage of processing according to an embodiment of the disclosure.
- FIG. 10 is a depiction of the substrate of FIGS. 9A, 9B, and 9C at a subsequent stage of processing according to an embodiment of the disclosure.
- FIGS. 11A, 11B, and 11C depict the construction of FIG. 10 at a subsequent stage of processing according to an embodiment of the disclosure.
- FIG. 12 is an example cellulose based integrated circuitry according to an embodiment of the disclosure.
- FIG. 13 is an example integrated circuitry according to an embodiment of the disclosure.
- a substrate 12 is provided in the first step of the process to prepare the integrated circuitry.
- Substrate 12 may or may not be a cellulose-based substrate.
- Substrate 12 may also be constructed of fiber-based materials such as but not limited to fiberglass materials.
- substrate 12 may also include materials that include insulative metal and/or inorganic materials.
- Substrate 12 may include one surface 14 opposing another surface 16 , for example.
- substrate 12 may have vias 20 formed therein. These vias may be provided as a plurality in the form of one set of rows 22 and another set of rows 24 . According to example configurations, these rows may be offset, for example, as shown in FIG. 2A .
- vias 20 may extend the entirety between surface 14 and surface 16 within substrate 12 , for example. According to example implementations these vias may be formed utilizing laser equipment, for example, and may have a size sufficient to allow for the transmission of fluid conductive material upon application as will be described in later steps.
- conductive material 30 may be placed on one surface 14 of substrate 12 , for example, and this conductive material 30 can be applied in rows that may be consistent with sets or rows of via 20 , for example, and as shown in FIG. 3A .
- conductive material 30 may be provided in a plurality of lines 32 , for example.
- conductive material 30 may extend through vias 20 and approach opposing surface 16 of substrate 12 , for example.
- Conductive material 30 can be, for example, a metallic material such as a silver based material, and may be applied to substrate 12 utilizing lithographic techniques, for example.
- lithographic technique can include silk screening the conductive material upon substrate 12 , for example.
- adhesive 40 can be applied to surface 16 of substrate 12 , for example. This adhesive 40 when applied can provide a convex surface 42 defining the perimeter of adhesive 40 , for example.
- Adhesive 40 can include acetate and/or alcohol based adhesives such as but not limited to polyvinyl acetate and/or polyvinyl alcohol based adhesives.
- Adhesive 40 can be a water-based adhesive.
- Adhesive 40 can be applied as a dollop of adhesive, for example, and applied in a manner configured to receive a monolithic electronic component 50 .
- monolithic electronic component 50 can be placed within adhesive 40 upon substrate 12 prior to adhesive 40 curing.
- adhesive 42 can maintain a convex outer surface when monolithic electronic component 50 is placed upon same. There also remains coverage 52 between monolithic electronic component 50 and adhesive 40 , for example, thereby completely, for example, sealing monolithic electronic component 50 within adhesive 40 .
- Monolithic electronic component 50 can include storage circuitry such as a semiconductor chip that includes circuitry for accessing data.
- Component 50 can take the form of die and/or chip.
- Component 50 can be a resistor, capacitor, and/or inductor.
- Monolithic electronic component 50 can include read-write memory such as flash memory, and/or read only memory.
- Monolithic electronic component 50 can include connection points that may be electrically connected to other conductive material, for example.
- monolithic electronic component 50 may include at least two connection points that may be connected to conductive material according to later processing steps referred to herein, for example.
- Monolithic electronic component 50 may have a capacity to store up to hundreds of megabytes or up to tens of gigabytes.
- monolithic electronic component 50 is shown within adhesive 40 upon curing of adhesive 40 .
- conductive material 70 can be applied to surface 16 .
- Conductive material 70 can also be applied in strips or lines.
- conductive material 70 can extend from one end 72 to another end 74 in one embodiment; or one end 76 to another end 78 in another portion of construction.
- one end 72 and/or 76 can contact the contact point of monolithic electronic component 50 , for example, and extend over substrate 12 to electrically connect with conductive material 30 that extends through vias 20 previously formed.
- the contact points of monolithic electronic component 50 can be placed at corner sections of monolithic electronic component 50 with contact points opposing each other across monolithic electronic component 50 and across corners. As shown in FIG.
- conductive material 70 can extend up to these corners of monolithic electronic component 50 and then down upon the surface 16 of substrate 12 .
- this conductive material 70 can be a silver based conductive material and may be provided to the substrate via application from a brush, syringe, filament, sprayed, and/or stamped, for example.
- additional sealing material 79 may be placed upon monolithic electronic component 50 as well as material 70 .
- Material 79 may include adhesive like material, such as water based materials including acetate and/or alcohol based adhesives such as but not limited to polyvinyl acetate and/or polyvinyl alcohol based adhesives.
- an adhesive material 80 can be applied above surface 16 , for example, encompassing or covering at least the preparation of the conductive material 70 .
- Adhesive material 80 can be applied as a sheet and then cured under heat and/or pressure conditions.
- Adhesive material 80 can include but is not limited to thermoplastic adhesives such as hot melt adhesives.
- Material 80 can include ethylene-vinyl acetate, polyolefins, polyamides, polyesters, polyurethanes, and/or styrene block copolymers, for example.
- a backing material or overcoat material can be provided that includes a recess 92 .
- Recess 92 can be configured to receive at least a portion of monolithic electronic component 50 , for example, and this backing 90 can be applied over adhesive material 80 .
- the entire construction can be baked/heated, pressurized, and/or RF energy applied to adhere backing 90 to substrate 12 , and substantially encase the conductive material between the backing and substrate 12 .
- an additional substrate 102 can be adhered to or laminated to the construction that includes substrate 12 and backing 90 using another adhesive material 100 . This can be performed through typical paper lamination techniques, thereby substantially encasing the processing circuitry between substrate 12 and substrate 100 as shown in FIGS. 11A-11C .
- FIG. 12 an example integrated circuitry is shown that includes at least a portion of the integrated circuitry demonstrated herein. This is but an example of how this single integrated circuitry can be applied to multiple portions of a substrate. Further, this integrated circuitry can take many forms and many manifestations as may be desired. One such a design is shown in FIG. 13 , and that design includes the following characteristics, for example.
- integrated circuitry 130 may include a plurality of monolithic electronic components 131 connected via metallic lines 136 . Within this circuitry can be resistors and/or capacitors 132 as well as battery and/or power source 133 . Circuitry 130 can also include led indicator lights 134 as well as switch 135 . All or part of circuitry 130 can be prepared according to the processes described herein.
Abstract
Description
- The present disclosure in various embodiments relates to integrated circuitry and methods for manufacturing same. Specific embodiments of the disclosure relate to cellulose-based integrated circuitry and methods for manufacturing same. The technology relates to that disclosed in issued US patent 8,047,443 entitled “Data Storage Devices” to DePaula.
- Traditional means of transmitting or communicating has included the use of cellulose based documents such as, for example, papers. These papers take the form of newspapers, correspondence, mailers, leaflets, etc., and they have been used throughout history to correspond and transmit information. Recently, information in addition to what is printed on the paper document can be transmitted as well. Part of this transmission is the use of circuitry integrated into the paper itself. The present disclosure provides embodiments of integrated circuitry as well as methods for making same that may be part of cellulosebased documents.
- A process for manufacturing cellulose based integrated circuitry construction is provided, the process comprising providing a first substrate having one surface opposing another surface; providing a plurality of vias within the substrate and between the surfaces; providing a first conductive material to the one surface of the substrate; providing adhesive to the other surface; providing a monolithic electronic component to the other surface; providing a second conductive material to the other surface and the monolithic electronic component; providing a backing material to the other surface of the substrate; and providing a second substrate to the backing material to form the construction. A cellulose based integrated circuitry construction is provided, comprising a first cellulose substrate having one surface opposing another surface and defining a plurality of vias between the surfaces; a first conductive material along the one surface and extending through the vias; a monolithic electronic component on the other surface; and a second conductive material along the other surface and conductively connecting the first conductive material with the monolithic electronic component. A cellulose based integrated circuitry construction is provided, comprising a pair of cellulose substrates having a monolithic electronic component therebetween;
- and backing material between the substrates, the backing material defining a recess and receiving the monolithic electronic component.
- Embodiments of the disclosure are described below with reference to the following accompanying drawings.
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FIGS. 1A and B are depictions of a substrate and cross section of same at a stage of processing according to an embodiment of the disclosure. -
FIGS. 2A and 2B depict the substrate ofFIGS. 1A and 1B at a subsequent stage of processing according to an embodiment of the disclosure. -
FIGS. 3A and 3B depict the substrate ofFIGS. 2A and 2B at a subsequent stage of processing according to an embodiment of the disclosure. -
FIGS. 4A and 4B depict the substrate ofFIGS. 3A and 3B at a subsequent stage of processing according to an embodiment of the disclosure. -
FIGS. 5A, 5B, and 5C depict the substrate ofFIGS. 4A and 4B at a subsequent stage of processing according to an embodiment of the disclosure. -
FIGS. 6A, 6B, and 6C depict the substrate ofFIGS. 5A, 5B, and 5C at a subsequent stage of processing according to an embodiment of the disclosure. -
FIGS. 7A, 7B, 7C, and 7D depict the substrate ofFIGS. 6A, 6B , and 6C at a subsequent stage of processing according to an embodiment of the disclosure. -
FIGS. 8A, 8B, and 8C depict the substrate ofFIGS. 7A, 7B, 7C , and 7D at a subsequent stage of processing according to an embodiment of the disclosure. -
FIGS. 9A, 9B, and 9C depict the substrate ofFIGS. 8A, 8B, and 8C at a subsequent stage of processing according to an embodiment of the disclosure. -
FIG. 10 is a depiction of the substrate ofFIGS. 9A, 9B, and 9C at a subsequent stage of processing according to an embodiment of the disclosure. -
FIGS. 11A, 11B, and 11C depict the construction ofFIG. 10 at a subsequent stage of processing according to an embodiment of the disclosure. -
FIG. 12 is an example cellulose based integrated circuitry according to an embodiment of the disclosure. -
FIG. 13 is an example integrated circuitry according to an embodiment of the disclosure. - Integrated circuitry and methods for making same are described with reference to
FIGS. 1-13 . Referring first toFIG. 1 , in the first step of the process to prepare the integrated circuitry, asubstrate 12 is provided.Substrate 12 may or may not be a cellulose-based substrate.Substrate 12 may also be constructed of fiber-based materials such as but not limited to fiberglass materials. In accordance with example implementations,substrate 12 may also include materials that include insulative metal and/or inorganic materials.Substrate 12 may include onesurface 14 opposing anothersurface 16, for example. - Referring next to
FIG. 2 ,substrate 12 may havevias 20 formed therein. These vias may be provided as a plurality in the form of one set of rows 22 and another set ofrows 24. According to example configurations, these rows may be offset, for example, as shown inFIG. 2A . Referring toFIG. 2B ,vias 20 may extend the entirety betweensurface 14 andsurface 16 withinsubstrate 12, for example. According to example implementations these vias may be formed utilizing laser equipment, for example, and may have a size sufficient to allow for the transmission of fluid conductive material upon application as will be described in later steps. - Referring next to
FIGS. 3A and 3B ,conductive material 30 may be placed on onesurface 14 ofsubstrate 12, for example, and thisconductive material 30 can be applied in rows that may be consistent with sets or rows of via 20, for example, and as shown inFIG. 3A . As described,conductive material 30 may be provided in a plurality oflines 32, for example. As shown inFIG. 3B , for example,conductive material 30 may extend throughvias 20 andapproach opposing surface 16 ofsubstrate 12, for example.Conductive material 30 can be, for example, a metallic material such as a silver based material, and may be applied tosubstrate 12 utilizing lithographic techniques, for example. One such lithographic technique can include silk screening the conductive material uponsubstrate 12, for example. - Referring next to
FIGS. 4A and 4B , adhesive 40 can be applied to surface 16 ofsubstrate 12, for example. This adhesive 40 when applied can provide aconvex surface 42 defining the perimeter of adhesive 40, for example.Adhesive 40 can include acetate and/or alcohol based adhesives such as but not limited to polyvinyl acetate and/or polyvinyl alcohol based adhesives.Adhesive 40 can be a water-based adhesive.Adhesive 40 can be applied as a dollop of adhesive, for example, and applied in a manner configured to receive a monolithicelectronic component 50. - Referring next to
FIG. 5A , monolithicelectronic component 50 can be placed within adhesive 40 uponsubstrate 12 prior to adhesive 40 curing. In accordance with example implementations, and with specific reference toFIGS. 5B and 5C , as shown, adhesive 42 can maintain a convex outer surface when monolithicelectronic component 50 is placed upon same. There also remainscoverage 52 between monolithicelectronic component 50 and adhesive 40, for example, thereby completely, for example, sealing monolithicelectronic component 50 withinadhesive 40. - Monolithic
electronic component 50 can include storage circuitry such as a semiconductor chip that includes circuitry for accessing data.Component 50 can take the form of die and/or chip.Component 50 can be a resistor, capacitor, and/or inductor. Monolithicelectronic component 50 can include read-write memory such as flash memory, and/or read only memory. Monolithicelectronic component 50 can include connection points that may be electrically connected to other conductive material, for example. In accordance with example implementations, monolithicelectronic component 50 may include at least two connection points that may be connected to conductive material according to later processing steps referred to herein, for example. Monolithicelectronic component 50 may have a capacity to store up to hundreds of megabytes or up to tens of gigabytes. - Referring to
FIGS. 6A through 6C , monolithicelectronic component 50 is shown within adhesive 40 upon curing ofadhesive 40. - As shown, there still remains
coverage 60 betweenadhesive 40 and monolithicelectronic component 50; however, thiscoverage 60 is substantially less thancoverage 52 shown inFIG. 5A upon curing. Further, theconvex surface 42 shown inFIG. 5A can then be at least partiallyconcave surface 62, wherein the adhesive is no longer above the upper surface of monolithicelectronic component 50, but resides below the surface. - Referring next to
FIGS. 7A through 7D ,conductive material 70 can be applied tosurface 16.Conductive material 70 can also be applied in strips or lines. For example,conductive material 70 can extend from oneend 72 to anotherend 74 in one embodiment; or oneend 76 to anotherend 78 in another portion of construction. In accordance with example implementations, oneend 72 and/or 76 can contact the contact point of monolithicelectronic component 50, for example, and extend oversubstrate 12 to electrically connect withconductive material 30 that extends throughvias 20 previously formed. In accordance with example configurations, the contact points of monolithicelectronic component 50 can be placed at corner sections of monolithicelectronic component 50 with contact points opposing each other across monolithicelectronic component 50 and across corners. As shown inFIG. 7C ,conductive material 70 can extend up to these corners of monolithicelectronic component 50 and then down upon thesurface 16 ofsubstrate 12. In accordance with example implementations, thisconductive material 70 can be a silver based conductive material and may be provided to the substrate via application from a brush, syringe, filament, sprayed, and/or stamped, for example. Referring toFIG. 7D , additional sealingmaterial 79 may be placed upon monolithicelectronic component 50 as well asmaterial 70.Material 79 may include adhesive like material, such as water based materials including acetate and/or alcohol based adhesives such as but not limited to polyvinyl acetate and/or polyvinyl alcohol based adhesives. - Referring next to
FIG. 8A , anadhesive material 80 can be applied abovesurface 16, for example, encompassing or covering at least the preparation of theconductive material 70.Adhesive material 80 can be applied as a sheet and then cured under heat and/or pressure conditions.Adhesive material 80 can include but is not limited to thermoplastic adhesives such as hot melt adhesives.Material 80 can include ethylene-vinyl acetate, polyolefins, polyamides, polyesters, polyurethanes, and/or styrene block copolymers, for example. - Referring next to
FIG. 9A , a backing material or overcoat material can be provided that includes arecess 92.Recess 92 can be configured to receive at least a portion of monolithicelectronic component 50, for example, and thisbacking 90 can be applied overadhesive material 80. Upon application of the backing material, the entire construction can be baked/heated, pressurized, and/or RF energy applied to adhere backing 90 tosubstrate 12, and substantially encase the conductive material between the backing andsubstrate 12. - Referring next to
FIG. 10 , anadditional substrate 102 can be adhered to or laminated to the construction that includessubstrate 12 andbacking 90 using anotheradhesive material 100. This can be performed through typical paper lamination techniques, thereby substantially encasing the processing circuitry betweensubstrate 12 andsubstrate 100 as shown inFIGS. 11A-11C . - Referring next to
FIG. 12 , an example integrated circuitry is shown that includes at least a portion of the integrated circuitry demonstrated herein. This is but an example of how this single integrated circuitry can be applied to multiple portions of a substrate. Further, this integrated circuitry can take many forms and many manifestations as may be desired. One such a design is shown inFIG. 13 , and that design includes the following characteristics, for example. - Referring to
FIG. 13 , integratedcircuitry 130 is shown that may include a plurality of monolithicelectronic components 131 connected viametallic lines 136. Within this circuitry can be resistors and/orcapacitors 132 as well as battery and/orpower source 133.Circuitry 130 can also include ledindicator lights 134 as well asswitch 135. All or part ofcircuitry 130 can be prepared according to the processes described herein.
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US16/545,890 US20190371723A1 (en) | 2014-02-28 | 2019-08-20 | Integrated Circuitry and Methods for Manufacturing Same |
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US201461946632P | 2014-02-28 | 2014-02-28 | |
PCT/US2015/018299 WO2015131185A1 (en) | 2014-02-28 | 2015-03-02 | Integrated circuitry and methods for manufacturing same |
US201615122393A | 2016-08-29 | 2016-08-29 | |
US16/545,890 US20190371723A1 (en) | 2014-02-28 | 2019-08-20 | Integrated Circuitry and Methods for Manufacturing Same |
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PCT/US2015/018299 Division WO2015131185A1 (en) | 2014-02-28 | 2015-03-02 | Integrated circuitry and methods for manufacturing same |
US15/122,393 Division US10388599B2 (en) | 2014-02-28 | 2015-03-02 | Integrated circuitry and methods for manufacturing same |
Publications (1)
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US15/122,393 Active US10388599B2 (en) | 2014-02-28 | 2015-03-02 | Integrated circuitry and methods for manufacturing same |
US16/545,890 Abandoned US20190371723A1 (en) | 2014-02-28 | 2019-08-20 | Integrated Circuitry and Methods for Manufacturing Same |
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US15/122,393 Active US10388599B2 (en) | 2014-02-28 | 2015-03-02 | Integrated circuitry and methods for manufacturing same |
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2015
- 2015-03-02 US US15/122,393 patent/US10388599B2/en active Active
- 2015-03-02 WO PCT/US2015/018299 patent/WO2015131185A1/en active Application Filing
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2019
- 2019-08-20 US US16/545,890 patent/US20190371723A1/en not_active Abandoned
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US6601770B1 (en) * | 1997-05-19 | 2003-08-05 | Rohm Co., Ltd. | Response device in contact/contactless IC card communication system |
US6437985B1 (en) * | 1997-09-26 | 2002-08-20 | Gemplus | Disposable electronic chip device and process of manufacture |
US7332371B2 (en) * | 1998-07-01 | 2008-02-19 | Seiko Epson Corporation | Semiconductor device and method of manufacture thereof, circuit board and electronic instrument |
US6234379B1 (en) * | 2000-02-28 | 2001-05-22 | Nordson Corporation | No-flow flux and underfill dispensing methods |
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US6739497B2 (en) * | 2002-05-13 | 2004-05-25 | International Busines Machines Corporation | SMT passive device noflow underfill methodology and structure |
US7728733B2 (en) * | 2006-08-10 | 2010-06-01 | Fujitsu Limited | RFID tag and RFID tag production method |
US9934459B2 (en) * | 2008-02-22 | 2018-04-03 | Toppan Printing Co., Ltd. | Transponder and booklet |
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Also Published As
Publication number | Publication date |
---|---|
US10388599B2 (en) | 2019-08-20 |
WO2015131185A1 (en) | 2015-09-03 |
US20170069566A1 (en) | 2017-03-09 |
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