US20190334617A1 - Driver assisted by charge sharing - Google Patents
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- US20190334617A1 US20190334617A1 US15/965,773 US201815965773A US2019334617A1 US 20190334617 A1 US20190334617 A1 US 20190334617A1 US 201815965773 A US201815965773 A US 201815965773A US 2019334617 A1 US2019334617 A1 US 2019334617A1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/07—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems
- H04B10/075—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal
- H04B10/079—Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems using an in-service signal using measurements of the data signal
- H04B10/0795—Performance monitoring; Measurement of transmission parameters
- H04B10/07953—Monitoring or measuring OSNR, BER or Q
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/502—LED transmitters
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/58—Compensation for non-linear transmitter output
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L25/00—Baseband systems
- H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
- H04L25/03—Shaping networks in transmitter or receiver, e.g. adaptive shaping networks
- H04L25/03006—Arrangements for removing intersymbol interference
- H04L25/03343—Arrangements at the transmitter end
Definitions
- Embodiments described herein are generally related to the field of opto-electronic device transducers. More specifically, embodiments described herein are related to compact and efficient current supplies for opto-electronic data conversion.
- the optical transducer involves a light emitting diode device having a slew rate that is less than ideal, and which ultimately produces a degraded bit-error-rate (BER) in the opto-electronic data conversion.
- BER bit-error-rate
- the less than ideal slew rate behavior is asymmetric for the signal rise and for the signal drop, thus reducing even further the BER performance of the device.
- a device as disclosed herein includes a switch configured to couple a current source with an output terminal upon receipt of a data signal.
- the device also includes a first variable capacitor coupled in parallel to the current source at a common node on a source terminal of the switch, wherein the first variable capacitor comprises multiple capacitive elements coupled in parallel and configured to be activated by a programmable signal, and wherein the programmable signal is selected to increase a charge transfer rate from an output terminal coupled to a load, when the switch is turned on.
- a serial interface includes an opto-electronic data link.
- the opto-electronic data link includes a light emitting device configured to convert an electric input signal into an optical output signal, a data channel configured to provide the electric input signal, and a switch configured to couple a current source with the light emitting device upon receipt of the electric input signal.
- the opto-electronic data link also includes a variable capacitor coupled in parallel to the current source at a common node on a source terminal of the switch.
- the variable capacitor comprises multiple capacitive elements coupled in parallel and configured to be activated by a programmable signal, wherein the programmable signal is selected to reduce a bit error rate between the electric input signal and the optical output signal.
- a system including a means for coupling a current source with an output terminal upon receipt of a data signal.
- the system further includes a means to generate an optical signal from the data signal.
- the means for coupling a current source with an output terminal includes a switch configured to couple a current source with an output terminal upon receipt of a data signal.
- the means for coupling a current source with an output terminal also includes a first variable capacitor coupled in parallel to the current source at a common node on a source terminal of the switch, wherein the first variable capacitor comprises multiple capacitive elements coupled in parallel and configured to be activated by a programmable signal, and wherein the programmable signal is selected to increase a charge transfer rate from an output terminal coupled to a load, when the switch is turned on.
- FIG. 2A illustrates an opto-electronic system including a charge-sharing element to assist in the falling edge of a signal transduction, according to some embodiments.
- FIG. 3 illustrates a variable capacitor for charge sharing in an opto-electronic system, according to some embodiments.
- FIG. 4 illustrates a variable capacitance chart of an output node in an opto-electronic system including a charge sharing element, according to some embodiments.
- FIG. 5 illustrates a serial interface for transducing an electrical signal from a transmitter into an optical signal for a receiver, according to some embodiments.
- FIGS. 6A-B illustrate multi-level eye diagrams for a serial interface assisted by a charge-sharing element, according to some embodiments.
- serial interfaces While some serial interfaces still use a non-return-to-zero (NRZ) scheme, direct modulation of the light emitting device is desired for practical signal integrity constraints, especially for some interconnect applications and low-loss profiles.
- High-speed transmitters for serial interfaces as disclosed herein may improve the “eye opening” in a BER diagram for transitions between non-adjacent levels, including wide bandwidth and tight timing constraints. Accordingly, embodiments as disclosed herein provide high data-rates while maintain signal integrity and energy efficiency, e.g., at 56 Gigabits per second (Gb/s) data rates with 4-taps of feedforward equalization (FFE).
- Gb/s Gigabits per second
- FFE feedforward equalization
- FIG. 1 illustrates an opto-electronic data link 10 including a charge-sharing element 100 , according to some embodiments.
- Opto-electronic data link 10 may be part of a serial interface including a light emitting device 120 configured to convert an electric input signal 131 into an optical output signal 132 .
- a data channel 50 provides electric input signal 131 to trigger a switch 105 coupling a current source 150 with light emitting device 120 upon receipt of electric input signal 131 .
- Current source 150 may include an auxiliary current source 101 coupled with a main current source 102 to modulate a current to light emitting device 120 above and below a bias current provided by a first current source 110 . Current is provided to light emitting device 120 through an output node 163 .
- Opto-electronic data link 10 also includes a variable capacitor 100 coupled in parallel to current source 150 at a common node 165 on a source terminal of switch 105 .
- variable capacitor 100 is adjusted to reduce a bit error rate between electric input signal 131 and optical output signal 132 .
- Power to current source 150 is provided by a high voltage source 111 (Vdd) and a low voltage source 112 , or sink (Vss, e.g., ground).
- switches 203 a and 205 b When switches 203 a and 205 b are turned on (e.g., when electric input signal 231 a is low), a current flows through a resistor 230 (e.g., a termination resistor) from output node 263 to node 261 , rising the voltage of output node 263 and reducing the current through load 220 below a bias current value provided by a bias current supply 210 .
- a resistor 230 e.g., a termination resistor
- Opto-electronic data link 20 a also includes a variable capacitor 200 a coupled in parallel to source terminal 201 a at a common node 265 a on a source terminal of switch 203 a , and coupled to a regulator 214 .
- Variable capacitor 200 a is selected by a programmable signal 275 a to increase a charge transfer rate from output node 263 coupled to a load 220 , when switch 203 a is turned on. Accordingly, the falling slew rate of load 220 may be enhanced by increasing a capacitance value in variable capacitor 200 a to enable charge sharing at node 263 , thus accelerating the time for the voltage at node 263 to be pulled up.
- load 220 may include a VCSEL and a transmission line.
- a driver for load 220 may include a regulator, a pre-driver, a T-coil, and a push-pull driver.
- Regulator 214 operates as a voltage protection for a high voltage source (Vdd).
- a capacitor 250 couples resistor 230 to ground for correct common mode termination voltage (V cm ) and stabilization at node 261 .
- Embodiments consistent with opto-electronic data link 20 a provide a driving current to load 220 with a high slew rate at the falling edge of a bit transfer on opto-electronic data link 20 a (e.g., the falling edge of electric input signal 231 a ).
- variable capacitor 200 a may increase the falling slew rate for the current driving load 220 , as it increases a charge transfer rate when switch 203 a is turned on by the falling edge of electric input 231 a (e.g., a falling edge of an electric input 231 a ).
- opto-electronic data link 20 a is configured so that when switch 203 a is off, then the capacitance of variable capacitor 200 a is effectively decoupled from output node 263 , and is therefore invisible for the purposes of a rising slew rate of load 220 . Moreover, when switch 203 a is on, then the capacitance of variable capacitor 200 a is coupled in series with the inherent capacitance of switch 203 a (which is a low capacitive PFET), and therefore the net capacitive effect on output node 263 is still low.
- FIG. 2B illustrates an opto-electronic system 20 b including a charge-sharing element to assist in the rising edge of a signal transduction, according to some embodiments.
- Opto-electronic data link 20 b includes a switch 205 a configured to couple source terminal 202 a of the auxiliary current source with output node 263 upon receipt of an electric input signal 231 b .
- switch 205 a includes a PFET, which is turned ‘on’ by a falling edge in electric input signal 231 b .
- Opto-electronic data link 20 b also includes sink terminal 201 b of the main current supply and switch 203 b .
- Switch 203 b is controlled by electric input signal 231 a .
- switch 203 b is an NFET.
- switches 203 b and 205 a are turned on (e.g., when electric input signal 231 a is high)
- a current flows through resistor 230 from node 261 to output node 263 , lowering the voltage of output node 263 and increasing the current through load 220 over the bias current value provided by bias current supply 210 .
- Opto-electronic data link 20 b also includes a variable capacitor 200 b coupled in parallel to sink terminal 201 b at a common node 265 b and to a source terminal of switch 203 b .
- variable capacitor 200 b is coupled to sink voltage Vss 212 (e.g., ground).
- Variable capacitor 200 b is selected by a programmable signal 275 b to increase a charge transfer rate from common node 265 b to node 261 , when switch 203 b is turned on. Accordingly, the rising slew rate of load 220 may be enhanced by increasing a capacitance value in variable capacitor 200 b to enable charge sharing at node 263 and accelerating the time for the voltage at node 263 to be pulled down.
- FIG. 3 illustrates a variable capacitor 300 for charge sharing in an opto-electronic system (e.g., opto-electronic systems 10 , 20 a and 20 b ), according to some embodiments.
- Variable capacitor 300 includes multiple capacitive elements 330 - 1 , 330 - 2 , through 330 - n (hereinafter, collectively referred to as “capacitive elements 330 ”) coupled in parallel between common node 365 and a Vss sink 312 (e.g., ground) and configured to be activated by a programmable signal 375 .
- Programmable signal 375 controls the strength of the charge sharing effect through adjustment of the capacitance of variable capacitor 300 .
- common node 365 may be the source terminal of a switch in the sink terminal of an auxiliary current supply (e.g., common node 265 a , and switch 205 b in sink terminal 202 b ).
- Programmable signal may include bits 310 - 1 , 310 - 2 , through 310 - n (hereinafter, collectively referred to as “bits 310 ”), which activate the gates of transistors 320 - 1 , 320 - 2 through 320 - n (hereinafter, collectively referred to as “transistors 320 ”), respectively.
- transistors 320 are NFETs, then high bits 310 add the capacitance of the respective one of capacitive elements 330 to the capacitance value of variable capacitor 300 .
- capacitors 310 may be classified as most significant bit (MSB) or least significant bit (LSB) based on the value of capacitors 330 .
- the value of capacitor 330 for a MSB is twice as large as the value of capacitor 330 for a LSB. Accordingly, one MSB “finger” and one LSB “finger” may allow for 0, 1, 2, and 3 different capacitance value strengths.
- each of the different capacitance value strengths may be associated with a strength level in an eye diagram of a BER graph for a serial link using the opto-electronic system coupled to variable capacitor 300 .
- FIG. 4 illustrates a variable capacitance chart 400 of an output node (e.g., output nodes 163 and 263 ) in an opto-electronic system including a charge sharing element (e.g., variable capacitors 100 , 200 a , and 300 , in opto-electronic systems 10 , 20 a and 20 b ), according to some embodiments.
- Chart 400 plots capacitance in the ordinates (Y-axis, arbitrary units) as a function of voltage (at the output node) in the abscissae (X-axis, arbitrary units).
- a curve 401 corresponds to a variable capacitor at its lowest capacitance value (e.g., all bits 310 set to low, cf. FIG. 3 ).
- a curve 402 corresponds to the switched capacitor at its highest capacitance value (e.g., all bits 310 set to high).
- An operating voltage region 410 for a VCSEL may span from voltage Vo to voltage Vm. It can be seen that in the high output voltage region the difference between curves 401 and 402 is very small. Further, the value of capacitance in curves 401 and 402 is also relatively small, as compared to a voltage region below Vo.
- FIG. 5 illustrates a serial interface 500 for transducing an electrical input signal 531 from a transmitter 501 into an optical output signal 532 for a receiver 502 , according to some embodiments.
- Serial interface 500 includes an opto-electronic data link 510 to transduce electrical signal 531 into optical signal 532 (e.g., opto-electronic data links 10 , 20 a and 20 b ).
- serial interface 500 includes a processor 575 configured to provide a programmable signal to improve a slew rate of a light emitting device in opto-electronic data link 510 (e.g., programmable signals 275 a and 375 and light emitting devices 120 or 220 —aVCSEL—).
- a processor 575 configured to provide a programmable signal to improve a slew rate of a light emitting device in opto-electronic data link 510 (e.g., programmable signals 275 a and 375 and light emitting devices 120 or 220 —aVCSEL—).
- serial interface 500 wherein the light emitting device comprises a load having a slew rate that defines an eye opening pattern in a bit-error rate diagram.
- opto-electronic data link 510 includes a first variable capacitor.
- a capacitance of the first variable capacitor may be adjusted based on a slew rate of a load coupled to a current source driving the load, and on a bit-error rate between electrical input signal 531 and optical output signal 532 .
- FIGS. 6A-B illustrate multi-level eye diagrams 600 A and 600 B (hereinafter, collectively referred to as “eye diagrams 600 ”) respectively, for a serial interface assisted by a charge-sharing element (e.g., serial interface 500 , cf. FIG. 5 ), according to some embodiments.
- Eye diagrams 600 illustrate a BER for electrical-to-optical data conversion using a VCSEL as the load of the serial interface (cf. light emitting diode 120 or load 220 ).
- the ordinate of eye diagrams 600 (Y-axis, in arbitrary units) indicates the value of an optical signal produced by the VCSEL (e.g., optical signal 132 , cf. FIG. 1 ) and the abscissae of eye diagrams 600 (X-axis, in arbitrary units) indicates time.
- a method may be an operation, an instruction, or a function and vice versa.
- a clause or a claim may be amended to include some or all of the words (e.g., instructions, operations, functions, or components) recited in other one or more clauses, one or more words, one or more sentences, one or more phrases, one or more paragraphs, and/or one or more claims.
- the phrase “at least one of” preceding a series of items, with the terms “and” or “or” to separate any of the items, modifies the list as a whole, rather than each member of the list (i.e., each item).
- the phrase “at least one of” does not require selection of at least one item; rather, the phrase allows a meaning that includes at least one of any one of the items, and/or at least one of any combination of the items, and/or at least one of each of the items.
- phrases “at least one of A, B, and C” or “at least one of A, B, or C” each refer to only A, only B, or only C; any combination of A, B, and C; and/or at least one of each of A, B, and C.
- a term field effect transistor may refer to any of a variety of multi-terminal transistors generally operating on the principals of controlling an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material, including, but not limited to a metal oxide semiconductor field effect transistor (MOSFET), a junction FET (JFET), a metal semiconductor FET (MESFET), a high electron mobility transistor (HEMT), a modulation doped FET (MODFET), an insulated gate bipolar transistor (IGBT), a fast reverse epitaxial diode FET (FREDFET), and an ion-sensitive FET (ISFET).
- MOSFET metal oxide semiconductor field effect transistor
- JFET junction FET
- MESFET metal semiconductor FET
- HEMT high electron mobility transistor
- MODFET modulation doped FET
- IGBT fast reverse epitaxial diode FET
- ISFET ion-sensitive FET
- exemplary is used herein to mean “serving as an example, instance, or illustration.” Any embodiment described herein as “exemplary” is not necessarily to be construed as preferred or advantageous over other embodiments. Phrases such as an aspect, the aspect, another aspect, some aspects, one or more aspects, an implementation, the implementation, another implementation, some implementations, one or more implementations, an embodiment, the embodiment, another embodiment, some embodiments, one or more embodiments, a configuration, the configuration, another configuration, some configurations, one or more configurations, the subject technology, the disclosure, the present disclosure, other variations thereof and alike are for convenience and do not imply that a disclosure relating to such phrase(s) is essential to the subject technology or that such disclosure applies to all configurations of the subject technology.
- a disclosure relating to such phrase(s) may apply to all configurations, or one or more configurations.
- a disclosure relating to such phrase(s) may provide one or more examples.
- a phrase such as an aspect or some aspects may refer to one or more aspects and vice versa, and this applies similarly to other foregoing phrases.
Abstract
Description
- Embodiments described herein are generally related to the field of opto-electronic device transducers. More specifically, embodiments described herein are related to compact and efficient current supplies for opto-electronic data conversion.
- Current opto-electronic systems are expected to operate at high data rates that impose stringent conditions on the capacitive response of the driver terminations. The optical transducer involves a light emitting diode device having a slew rate that is less than ideal, and which ultimately produces a degraded bit-error-rate (BER) in the opto-electronic data conversion. Moreover, the less than ideal slew rate behavior is asymmetric for the signal rise and for the signal drop, thus reducing even further the BER performance of the device.
- The description provided in the background section should not be assumed to be prior art merely because it is mentioned in or associated with the background section. The background section may include information that describes one or more aspects of the subject technology.
- In certain aspects, a device as disclosed herein includes a switch configured to couple a current source with an output terminal upon receipt of a data signal. The device also includes a first variable capacitor coupled in parallel to the current source at a common node on a source terminal of the switch, wherein the first variable capacitor comprises multiple capacitive elements coupled in parallel and configured to be activated by a programmable signal, and wherein the programmable signal is selected to increase a charge transfer rate from an output terminal coupled to a load, when the switch is turned on.
- In certain aspects, a system as disclosed herein includes a light emitting device, a data channel configured to provide a data signal, and a switch configured to couple a current source with the light emitting device upon receipt of the data signal. The system also includes a first variable capacitor coupled in parallel to the current source at a common mode node on a source terminal of the switch, wherein the first variable capacitor comprises a plurality of capacitive elements coupled in parallel and configured to be activated by a programmable signal, and wherein the programmable signal is selected to increase a slew rate from the light emitting device when the switch is turned on and when the switch is turned off.
- In certain aspects, a serial interface includes an opto-electronic data link. The opto-electronic data link includes a light emitting device configured to convert an electric input signal into an optical output signal, a data channel configured to provide the electric input signal, and a switch configured to couple a current source with the light emitting device upon receipt of the electric input signal. The opto-electronic data link also includes a variable capacitor coupled in parallel to the current source at a common node on a source terminal of the switch. The variable capacitor comprises multiple capacitive elements coupled in parallel and configured to be activated by a programmable signal, wherein the programmable signal is selected to reduce a bit error rate between the electric input signal and the optical output signal.
- In certain aspects, a system is described including a means for coupling a current source with an output terminal upon receipt of a data signal. The system further includes a means to generate an optical signal from the data signal. The means for coupling a current source with an output terminal includes a switch configured to couple a current source with an output terminal upon receipt of a data signal. The means for coupling a current source with an output terminal also includes a first variable capacitor coupled in parallel to the current source at a common node on a source terminal of the switch, wherein the first variable capacitor comprises multiple capacitive elements coupled in parallel and configured to be activated by a programmable signal, and wherein the programmable signal is selected to increase a charge transfer rate from an output terminal coupled to a load, when the switch is turned on.
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FIG. 1 illustrates an opto-electronic system including a charge-sharing element, according to some embodiments. -
FIG. 2A illustrates an opto-electronic system including a charge-sharing element to assist in the falling edge of a signal transduction, according to some embodiments. -
FIG. 2B illustrates an opto-electronic system including a charge-sharing element to assist in the rising edge of a signal transduction, according to some embodiments. -
FIG. 3 illustrates a variable capacitor for charge sharing in an opto-electronic system, according to some embodiments. -
FIG. 4 illustrates a variable capacitance chart of an output node in an opto-electronic system including a charge sharing element, according to some embodiments. -
FIG. 5 illustrates a serial interface for transducing an electrical signal from a transmitter into an optical signal for a receiver, according to some embodiments. -
FIGS. 6A-B illustrate multi-level eye diagrams for a serial interface assisted by a charge-sharing element, according to some embodiments. - In the figures, elements and steps denoted by the same or similar reference numerals are associated with the same or similar elements and steps, unless indicated otherwise.
- The detailed description set forth below is intended as a description of various implementations and is not intended to represent the only implementations in which the subject technology may be practiced. As those skilled in the art would realize, the described implementations may be modified in various different ways, all without departing from the scope of the present disclosure. Accordingly, the drawings and description are to be regarded as illustrative in nature and not restrictive.
- Electrical and optical link migration use serial interfaces operating at increasing data rates. Low bandwidth is a strict constraint at high bit rates, or with high input/output (IO) capacitance loads. This may be the case with drivers for typical vertical cavity emitting light diodes (VCSEL). In some cases, serial interfaces include equalization steps to remove VCSEL ringing and high impedance issues. To resolve the constraint of low bandwidth at high bit rates, embodiments disclosed herein include a push-pull driver (e.g., for a VCSEL) with assisted charge sharing for bandwidth enhancement.
- While some serial interfaces still use a non-return-to-zero (NRZ) scheme, direct modulation of the light emitting device is desired for practical signal integrity constraints, especially for some interconnect applications and low-loss profiles. High-speed transmitters for serial interfaces as disclosed herein may improve the “eye opening” in a BER diagram for transitions between non-adjacent levels, including wide bandwidth and tight timing constraints. Accordingly, embodiments as disclosed herein provide high data-rates while maintain signal integrity and energy efficiency, e.g., at 56 Gigabits per second (Gb/s) data rates with 4-taps of feedforward equalization (FFE).
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FIG. 1 illustrates an opto-electronic data link 10 including a charge-sharing element 100, according to some embodiments. Opto-electronic data link 10 may be part of a serial interface including alight emitting device 120 configured to convert anelectric input signal 131 into anoptical output signal 132. Adata channel 50 provideselectric input signal 131 to trigger aswitch 105 coupling acurrent source 150 withlight emitting device 120 upon receipt ofelectric input signal 131.Current source 150 may include an auxiliarycurrent source 101 coupled with a maincurrent source 102 to modulate a current tolight emitting device 120 above and below a bias current provided by a firstcurrent source 110. Current is provided tolight emitting device 120 through anoutput node 163. - Opto-
electronic data link 10 also includes avariable capacitor 100 coupled in parallel tocurrent source 150 at acommon node 165 on a source terminal ofswitch 105. In some embodiments,variable capacitor 100 is adjusted to reduce a bit error rate betweenelectric input signal 131 andoptical output signal 132. Power tocurrent source 150 is provided by a high voltage source 111 (Vdd) and alow voltage source 112, or sink (Vss, e.g., ground). -
FIG. 2A illustrates an opto-electronic data link 20 a including a charge-sharing element 200 a to assist in the falling edge portion of a signal transduction, according to some embodiments. Opto-electronic data link 20 a includes a main current supply having a source terminal 201 a and aswitch 203 a.Switch 203 a is controlled by anelectric input signal 231 a. Further, in some embodiments switch 203 a is a positive channel FET (PFET). Opto-electronic data link 20 a also includes aswitch 205 b configured to couple asink terminal 202 b of an auxiliary current source with anoutput node 263 upon receipt of anelectric input signal 231 b. In some embodiments,switch 205 b includes a negative channel, field effect transistor (NFET), which is turned ‘on’ by a rising edge inelectric input signal 231 b. In some embodiments,electric input signals electric input signal 231 a is high,electric input signal 231 b is low. And whenelectric input signal 231 a is lowelectric input signal 231 b is high. When switches 203 a and 205 b are turned on (e.g., when electric input signal 231 a is low), a current flows through a resistor 230 (e.g., a termination resistor) fromoutput node 263 tonode 261, rising the voltage ofoutput node 263 and reducing the current throughload 220 below a bias current value provided by a biascurrent supply 210. - Opto-electronic data link 20 a also includes a
variable capacitor 200 a coupled in parallel to source terminal 201 a at acommon node 265 a on a source terminal ofswitch 203 a, and coupled to aregulator 214.Variable capacitor 200 a is selected by aprogrammable signal 275 a to increase a charge transfer rate fromoutput node 263 coupled to aload 220, whenswitch 203 a is turned on. Accordingly, the falling slew rate ofload 220 may be enhanced by increasing a capacitance value invariable capacitor 200 a to enable charge sharing atnode 263, thus accelerating the time for the voltage atnode 263 to be pulled up. - In some embodiments, load 220 may include a VCSEL and a transmission line. A driver for
load 220 may include a regulator, a pre-driver, a T-coil, and a push-pull driver.Regulator 214 operates as a voltage protection for a high voltage source (Vdd). Acapacitor 250 couples resistor 230 to ground for correct common mode termination voltage (Vcm) and stabilization atnode 261. Embodiments consistent with opto-electronic data link 20 a provide a driving current to load 220 with a high slew rate at the falling edge of a bit transfer on opto-electronic data link 20 a (e.g., the falling edge of electric input signal 231 a). For example,variable capacitor 200 a may increase the falling slew rate for thecurrent driving load 220, as it increases a charge transfer rate whenswitch 203 a is turned on by the falling edge ofelectric input 231 a (e.g., a falling edge of anelectric input 231 a). - When switch 203 a is turned on,
common node 265 a couples withnode 261 and a large charge surplus fromvariable capacitor 200 a (“charge sharing”) chargescommon node 265 a to a steady state voltage value (Vcm). In general, the larger the capacitance ofvariable capacitor 200 a, the more extra charge will be available for sharing to drive Vcm to a steady state value, thus improving the falling slew rate of the driver forload 220. - In some embodiments, opto-electronic data link 20 a is configured so that when
switch 203 a is off, then the capacitance ofvariable capacitor 200 a is effectively decoupled fromoutput node 263, and is therefore invisible for the purposes of a rising slew rate ofload 220. Moreover, whenswitch 203 a is on, then the capacitance ofvariable capacitor 200 a is coupled in series with the inherent capacitance ofswitch 203 a (which is a low capacitive PFET), and therefore the net capacitive effect onoutput node 263 is still low. Further, whenswitch 203 a is on,common node 265 a is coupled to biased FETS (e.g., a PFET inswitch 203 a and an NFET inswitch 205 b), which keep Vcm nearly constant after a steady-state value is achieved. In this regime, changes in the voltage of output node 263 (modulating the optical signal from load 220) cause a limited charge displacement fromvariable capacitor 200 a. The net result is that, even whenswitch 203 a is on, the equivalent capacitance introduced byvariable capacitor 200 a is relatively small, as seen fromoutput node 263. -
FIG. 2B illustrates an opto-electronic system 20 b including a charge-sharing element to assist in the rising edge of a signal transduction, according to some embodiments. Opto-electronic data link 20 b includes aswitch 205 a configured to couple source terminal 202 a of the auxiliary current source withoutput node 263 upon receipt of anelectric input signal 231 b. In some embodiments, switch 205 a includes a PFET, which is turned ‘on’ by a falling edge inelectric input signal 231 b. Opto-electronic data link 20 b also includessink terminal 201 b of the main current supply and switch 203 b. Switch 203 b is controlled by electric input signal 231 a. Further, in some embodiments switch 203 b is an NFET. When switches 203 b and 205 a are turned on (e.g., when electric input signal 231 a is high), a current flows throughresistor 230 fromnode 261 tooutput node 263, lowering the voltage ofoutput node 263 and increasing the current throughload 220 over the bias current value provided by biascurrent supply 210. - Opto-electronic data link 20 b also includes a
variable capacitor 200 b coupled in parallel to sink terminal 201 b at acommon node 265 b and to a source terminal ofswitch 203 b. In some embodiments,variable capacitor 200 b is coupled to sink voltage Vss 212 (e.g., ground).Variable capacitor 200 b is selected by aprogrammable signal 275 b to increase a charge transfer rate fromcommon node 265 b tonode 261, whenswitch 203 b is turned on. Accordingly, the rising slew rate ofload 220 may be enhanced by increasing a capacitance value invariable capacitor 200 b to enable charge sharing atnode 263 and accelerating the time for the voltage atnode 263 to be pulled down. -
FIG. 3 illustrates avariable capacitor 300 for charge sharing in an opto-electronic system (e.g., opto-electronic systems Variable capacitor 300 includes multiple capacitive elements 330-1, 330-2, through 330-n (hereinafter, collectively referred to as “capacitive elements 330”) coupled in parallel betweencommon node 365 and a Vss sink 312 (e.g., ground) and configured to be activated by aprogrammable signal 375.Programmable signal 375 controls the strength of the charge sharing effect through adjustment of the capacitance ofvariable capacitor 300. In some embodiments,common node 365 may be the source terminal of a switch in the sink terminal of an auxiliary current supply (e.g.,common node 265 a, and switch 205 b insink terminal 202 b). Programmable signal may include bits 310-1, 310-2, through 310-n (hereinafter, collectively referred to as “bits 310”), which activate the gates of transistors 320-1, 320-2 through 320-n (hereinafter, collectively referred to as “transistors 320”), respectively. Whentransistors 320 are NFETs, thenhigh bits 310 add the capacitance of the respective one ofcapacitive elements 330 to the capacitance value ofvariable capacitor 300. - In some embodiments,
capacitors 310 may be classified as most significant bit (MSB) or least significant bit (LSB) based on the value ofcapacitors 330. In some embodiments, the value ofcapacitor 330 for a MSB is twice as large as the value ofcapacitor 330 for a LSB. Accordingly, one MSB “finger” and one LSB “finger” may allow for 0, 1, 2, and 3 different capacitance value strengths. In some embodiments, each of the different capacitance value strengths may be associated with a strength level in an eye diagram of a BER graph for a serial link using the opto-electronic system coupled tovariable capacitor 300. -
FIG. 4 illustrates avariable capacitance chart 400 of an output node (e.g.,output nodes 163 and 263) in an opto-electronic system including a charge sharing element (e.g.,variable capacitors electronic systems curve 401 corresponds to a variable capacitor at its lowest capacitance value (e.g., allbits 310 set to low, cf.FIG. 3 ). Acurve 402 corresponds to the switched capacitor at its highest capacitance value (e.g., allbits 310 set to high). - An
operating voltage region 410 for a VCSEL (e.g., light emittingdevice 120, or load 220) may span from voltage Vo to voltage Vm. It can be seen that in the high output voltage region the difference betweencurves curves -
FIG. 5 illustrates aserial interface 500 for transducing an electrical input signal 531 from atransmitter 501 into anoptical output signal 532 for areceiver 502, according to some embodiments.Serial interface 500 includes an opto-electronic data link 510 to transduceelectrical signal 531 into optical signal 532 (e.g., opto-electronic data links - In some embodiments,
serial interface 500 includes aprocessor 575 configured to provide a programmable signal to improve a slew rate of a light emitting device in opto-electronic data link 510 (e.g.,programmable signals devices - In some embodiments,
serial interface 500, wherein the light emitting device comprises a load having a slew rate that defines an eye opening pattern in a bit-error rate diagram. - In some embodiments, opto-electronic data link 510 includes a first variable capacitor. A capacitance of the first variable capacitor may be adjusted based on a slew rate of a load coupled to a current source driving the load, and on a bit-error rate between
electrical input signal 531 andoptical output signal 532. -
FIGS. 6A-B illustrate multi-level eye diagrams 600A and 600B (hereinafter, collectively referred to as “eye diagrams 600”) respectively, for a serial interface assisted by a charge-sharing element (e.g.,serial interface 500, cf.FIG. 5 ), according to some embodiments. Eye diagrams 600 illustrate a BER for electrical-to-optical data conversion using a VCSEL as the load of the serial interface (cf. light emittingdiode 120 or load 220). The ordinate of eye diagrams 600 (Y-axis, in arbitrary units) indicates the value of an optical signal produced by the VCSEL (e.g.,optical signal 132, cf.FIG. 1 ) and the abscissae of eye diagrams 600 (X-axis, in arbitrary units) indicates time. - Eye diagram 600A corresponds to a charge-sharing element with a low capacitance value (e.g., all
bits 310 set to low, cf.FIG. 3 , as shown incurve 401, cf.FIG. 4 ). Eye diagram 600B corresponds to a charge-sharing element with a high capacitance value (e.g., allbits 310 set to high, cf.FIG. 3 , as shown incurve 402, cf.FIG. 4 ). Accordingly, the addition of a charge-sharing element enhances the BER performance, as eye diagram 600B illustrates a wider “eye opening” at all signal levels (four different signal levels) and less jitter over the abscissae, relative to eye diagram 600A. - In one aspect, a method may be an operation, an instruction, or a function and vice versa. In one aspect, a clause or a claim may be amended to include some or all of the words (e.g., instructions, operations, functions, or components) recited in other one or more clauses, one or more words, one or more sentences, one or more phrases, one or more paragraphs, and/or one or more claims.
- To illustrate the interchangeability of hardware and software, items such as the various illustrative blocks, modules, components, methods, operations, instructions, and algorithms have been described generally in terms of their functionality. Whether such functionality is implemented as hardware, software or a combination of hardware and software depends upon the particular application and design constraints imposed on the overall system. Skilled artisans may implement the described functionality in varying ways for each particular application.
- As used herein, the phrase “at least one of” preceding a series of items, with the terms “and” or “or” to separate any of the items, modifies the list as a whole, rather than each member of the list (i.e., each item). The phrase “at least one of” does not require selection of at least one item; rather, the phrase allows a meaning that includes at least one of any one of the items, and/or at least one of any combination of the items, and/or at least one of each of the items. By way of example, the phrases “at least one of A, B, and C” or “at least one of A, B, or C” each refer to only A, only B, or only C; any combination of A, B, and C; and/or at least one of each of A, B, and C.
- In one aspect, a term field effect transistor (FET) may refer to any of a variety of multi-terminal transistors generally operating on the principals of controlling an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material, including, but not limited to a metal oxide semiconductor field effect transistor (MOSFET), a junction FET (JFET), a metal semiconductor FET (MESFET), a high electron mobility transistor (HEMT), a modulation doped FET (MODFET), an insulated gate bipolar transistor (IGBT), a fast reverse epitaxial diode FET (FREDFET), and an ion-sensitive FET (ISFET).
- To the extent that the term “include,” “have,” or the like is used in the description or the claims, such term is intended to be inclusive in a manner similar to the term “comprise” as “comprise” is interpreted when employed as a transitional word in a claim.
- The word “exemplary” is used herein to mean “serving as an example, instance, or illustration.” Any embodiment described herein as “exemplary” is not necessarily to be construed as preferred or advantageous over other embodiments. Phrases such as an aspect, the aspect, another aspect, some aspects, one or more aspects, an implementation, the implementation, another implementation, some implementations, one or more implementations, an embodiment, the embodiment, another embodiment, some embodiments, one or more embodiments, a configuration, the configuration, another configuration, some configurations, one or more configurations, the subject technology, the disclosure, the present disclosure, other variations thereof and alike are for convenience and do not imply that a disclosure relating to such phrase(s) is essential to the subject technology or that such disclosure applies to all configurations of the subject technology. A disclosure relating to such phrase(s) may apply to all configurations, or one or more configurations. A disclosure relating to such phrase(s) may provide one or more examples. A phrase such as an aspect or some aspects may refer to one or more aspects and vice versa, and this applies similarly to other foregoing phrases.
- A reference to an element in the singular is not intended to mean “one and only one” unless specifically stated, but rather “one or more.” The term “some” refers to one or more. Underlined and/or italicized headings and subheadings are used for convenience only, do not limit the subject technology, and are not referred to in connection with the interpretation of the description of the subject technology. Relational terms such as first and second and the like may be used to distinguish one entity or action from another without necessarily requiring or implying any actual such relationship or order between such entities or actions. All structural and functional equivalents to the elements of the various configurations described throughout this disclosure that are known or later come to be known to those of ordinary skill in the art are expressly incorporated herein by reference and intended to be encompassed by the subject technology. Moreover, nothing disclosed herein is intended to be dedicated to the public regardless of whether such disclosure is explicitly recited in the above description. No claim element is to be construed under the provisions of 35 U.S.C. § 112, sixth paragraph, unless the element is expressly recited using the phrase “means for” or, in the case of a method claim, the element is recited using the phrase “step for”.
- While this specification contains many specifics, these should not be construed as limitations on the scope of what may be claimed, but rather as descriptions of particular implementations of the subject matter. Certain features that are described in this specification in the context of separate embodiments can also be implemented in combination in a single embodiment. Conversely, various features that are described in the context of a single embodiment can also be implemented in multiple embodiments separately or in any suitable subcombination. Moreover, although features may be described above as acting in certain combinations and even initially claimed as such, one or more features from a claimed combination can in some cases be excised from the combination, and the claimed combination may be directed to a subcombination or variation of a subcombination.
- The subject matter of this specification has been described in terms of particular aspects, but other aspects can be implemented and are within the scope of the following claims. For example, while operations are depicted in the drawings in a particular order, this should not be understood as requiring that such operations be performed in the particular order shown or in sequential order, or that all illustrated operations be performed, to achieve desirable results. The actions recited in the claims can be performed in a different order and still achieve desirable results. As one example, the processes depicted in the accompanying figures do not necessarily require the particular order shown, or sequential order, to achieve desirable results. In certain circumstances, multitasking and parallel processing may be advantageous. Moreover, the separation of various system components in the aspects described above should not be understood as requiring such separation in all aspects, and it should be understood that the described program components and systems can generally be integrated together in a single software product or packaged into multiple software products.
- The title, background, brief description of the drawings, abstract, and drawings are hereby incorporated into the disclosure and are provided as illustrative examples of the disclosure, not as restrictive descriptions. It is submitted with the understanding that they will not be used to limit the scope or meaning of the claims. In addition, in the detailed description, it can be seen that the description provides illustrative examples and the various features are grouped together in various implementations for the purpose of streamlining the disclosure. The method of disclosure is not to be interpreted as reflecting an intention that the claimed subject matter requires more features than are expressly recited in each claim. Rather, as the claims reflect, inventive subject matter lies in less than all features of a single disclosed configuration or operation. The claims are hereby incorporated into the detailed description, with each claim standing on its own as a separately claimed subject matter.
- The claims are not intended to be limited to the aspects described herein, but are to be accorded the full scope consistent with the language claims and to encompass all legal equivalents. Notwithstanding, none of the claims are intended to embrace subject matter that fails to satisfy the requirements of the applicable patent law, nor should they be interpreted in such a way.
Claims (20)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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US15/965,773 US10484089B1 (en) | 2018-04-27 | 2018-04-27 | Driver assisted by charge sharing |
CN201980037535.7A CN112219353A (en) | 2018-04-27 | 2019-04-26 | Driver assisted by charge sharing |
DE112019002200.8T DE112019002200B4 (en) | 2018-04-27 | 2019-04-26 | A CHARGE SHARING ASSISTED DRIVER |
PCT/US2019/029482 WO2019210262A1 (en) | 2018-04-27 | 2019-04-26 | A driver assisted by charge sharing |
Applications Claiming Priority (1)
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US15/965,773 US10484089B1 (en) | 2018-04-27 | 2018-04-27 | Driver assisted by charge sharing |
Publications (2)
Publication Number | Publication Date |
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US20190334617A1 true US20190334617A1 (en) | 2019-10-31 |
US10484089B1 US10484089B1 (en) | 2019-11-19 |
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US15/965,773 Active US10484089B1 (en) | 2018-04-27 | 2018-04-27 | Driver assisted by charge sharing |
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US (1) | US10484089B1 (en) |
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-
2019
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- 2019-04-26 DE DE112019002200.8T patent/DE112019002200B4/en active Active
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Also Published As
Publication number | Publication date |
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CN112219353A (en) | 2021-01-12 |
DE112019002200B4 (en) | 2023-05-04 |
DE112019002200T5 (en) | 2021-01-14 |
US10484089B1 (en) | 2019-11-19 |
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