US20190296202A1 - Display device having an electronic device disposed on a first pad and a second pad - Google Patents
Display device having an electronic device disposed on a first pad and a second pad Download PDFInfo
- Publication number
- US20190296202A1 US20190296202A1 US15/928,238 US201815928238A US2019296202A1 US 20190296202 A1 US20190296202 A1 US 20190296202A1 US 201815928238 A US201815928238 A US 201815928238A US 2019296202 A1 US2019296202 A1 US 2019296202A1
- Authority
- US
- United States
- Prior art keywords
- pad
- connecting post
- metal line
- substrate
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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Definitions
- the present disclosure relates to a display device, and in particular it relates to the interconnection of the electronic components in the display device.
- Micro LED technology is an emerging flat panel display technology. Micro LED displays drive an array of addressed micro LEDs. Micro LED displays may produce seamless images with a wide viewing angle, high brightness, and high contrast. However, due to the small size of a micro LED (e.g., in a range from about 1 um to about 200 um), integration and packaging issues are one of the main obstacles for commercialization of such products.
- micro LEDs are generally formed and divided into several micro LED dies (e.g., micro-lighting dies) on a wafer substrate and then transferred to another destination substrate.
- the driving circuits and related circuits are formed on the destination substrate to provide an array substrate (e.g., a TFT array substrate), and the micro LED dies are then mounted on the array substrate. Due to the small size of micro LED dies, transferring the micro LED dies to the destination substrate is a burdensome task.
- the electrical connections between the micro LED (including the integrated electronic component where these dies are formed) and the destination substrate is also a problem that needs to be taken care of.
- a display device in accordance with some embodiments of the present disclosure, includes a substrate and a first metal line and a second metal line disposed on the substrate.
- the display device also includes a first pad and a second pad disposed on the substrate and electrically connected to the first metal line and the second metal line respectively.
- the display device further includes an electronic device disposed on the first pad and the second pad.
- the electronic device includes a first connecting post and a second connecting post, wherein a distance between the first connecting post and the second connecting post is in a range from 1 um to 200 um. A portion of the first connecting post is embedded in the first pad and a portion of the second connecting post is embedded in the second pad.
- a display device includes an integrated electronic component, a second substrate disposed below the integrated electronic component, and a third pad and a fourth pad disposed on the second substrate and electrically connected to the first metal line and the second metal line respectively.
- the integrated electronic component includes a first substrate and a first metal line and a second metal line disposed on the first substrate.
- the integrated electronic component also includes a first pad and a second pad disposed on the first substrate and electrically connected to the first metal line and the second metal line respectively.
- the integrated electronic component further includes an electronic device disposed on the first pad and the second pad, and the electronic device includes a first connecting post and a second connecting post.
- a portion of the first connecting post is embedded in the first pad and a portion of the second connecting post is embedded in the second pad.
- the first metal line includes a third connecting post and the second metal line includes a fourth connecting post.
- the third connecting post and the fourth connecting post are in contact with the third pad and the fourth pad respectively.
- FIG. 1 illustrates the cross-sectional views of the display device in accordance with some embodiments of the present disclosure.
- FIGS. 2A-2D illustrate the cross-sectional views of the metal lines and the pads in the region M in FIG. 1 in accordance with some embodiments.
- FIG. 2E and FIG. 2F illustrate the top views of the metal lines and the pads in the region M in FIG. 1 in accordance with some embodiments.
- FIGS. 3-7 illustrate the cross-sectional views of the display device in accordance with some embodiments of the present disclosure.
- FIGS. 8A-8E illustrate the cross-sectional views of the region M in FIG. 1 in accordance with some embodiments.
- FIG. 9 illustrate a cross-sectional view of the display device in accordance with some embodiments of the present disclosure.
- FIG. 10 illustrates a cross-sectional view of the display device in accordance with some embodiments of the present disclosure.
- FIGS. 11A-11C illustrate the diagrams showing the transfer process of the electronic devices to the destination substrate in accordance with some embodiments of the present disclosure.
- first material layer disposed on/over a second material layer may indicate the direct contact of the first material layer and the second material layer, or it may indicate a non-contact state with one or more intermediate layers between the first material layer and the second material layer. In the above situation, the first material layer may not be in direct contact with the second material layer.
- a layer overlying another layer may indicate that the layer is in direct contact with the other layer, or that the layer is not in direct contact with the other layer, there being one or more intermediate layers disposed between the layer and the other layer.
- first, second, third etc. may be used herein to describe various elements, components, regions, layers, portions and/or sections, these elements, components, regions, layers, portions and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, portion or section from another element, component, region, layer or section. Thus, a first element, component, region, layer, portion or section discussed below could be termed a second element, component, region, layer, portion or section without departing from the teachings of the present disclosure.
- the terms “about” and “substantially” typically mean +/ ⁇ 20% of the stated value, more typically +/ ⁇ 10% of the stated value, more typically +/ ⁇ 5% of the stated value, more typically +/ ⁇ 3% of the stated value, more typically +/ ⁇ 2% of the stated value, more typically +/ ⁇ 1% of the stated value and even more typically +/ ⁇ 0.5% of the stated value.
- the stated value of the present disclosure is an approximate value. When there is no specific description, the stated value includes the meaning of “about” or “substantially”.
- attachments, coupling and the like refer to a relationship wherein structures are secured or attached to one another either directly or indirectly through intervening structures, as well as both movable or rigid attachments or relationships, unless expressly described otherwise.
- the present disclosure provides a structure for improving the efficiency of the electrical connection between relatively small electronic devices such as micro LEDs, organic LEDs, quautum-dot LEDs or integrated electronic components and a relatively large destination substrate such as an array substrate.
- the display device provided in the present disclosure includes the connecting posts that can be securely embedded in the conductive elements of the destination substrate, such as the pads for the interconnection.
- the electronic devices can therefore maintain effective electrical connection to the circuit system on the destination substrate.
- the configuration of the intermediate substrate in the display device may reduce the times that are required for the transfer of the small electronic devices to the destination substrate in accordance with some embodiments of the present disclosure.
- FIG. 1 illustrates a cross-sectional view of the display device 10 in accordance with some embodiments of the present disclosure. It should be understood that additional features may be added to the display device in accordance with some embodiments of the present disclosure. Some of the features described below may be replaced or eliminated in accordance with some embodiments of the present disclosure.
- the display device 10 includes a first substrate 100 and an electronic device 200 disposed on the first substrate 100 .
- the first substrate 100 may be an intermediate substrate or a destination substrate (such as an array substrate) of the display device 10 .
- the material of the first substrate 100 may include, but is not limited to, glass, quartz, sapphire, polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), rubbers, glass fibers, other polymer materials, any other suitable substrate material, or a combination thereof.
- the first substrate 100 may be formed of a metal-glass fiber composite plate, a metal-ceramic composite plate, a printed circuit board, or any other suitable material, but it is not limited thereto.
- the display substrate 10 also includes a first metal line 102 a and a second metal line 102 b disposed on the first substrate 100 .
- the first metal line 102 a and the second metal line 102 b may be any conductive element on the first substrate 100 .
- the first metal line 102 a and the second metal line 102 b each may be the conductive elements of the circuit on the array substrate.
- the first metal line 102 a and the second metal line 102 b may be the data line or scan line on the array substrate.
- the first metal line 102 a and the second metal line 102 b may respectively have a thickness T 1 and a thickness T 2 in the X direction of the first substrate 100 , for example, in the X direction as shown in FIG.
- the thickness T 1 of the first metal line 102 a may be in a range from about 0.1 ⁇ m to about 1 ⁇ m, or from about 0.2 um to about 0.6 um.
- the thickness T 2 of the second metal line 102 b may be in a range from about 0.1 ⁇ m to about 1 ⁇ m, or from about 0.2 um to about 0.6 um.
- the thickness T 1 of the first metal line 102 a may be the same as or different than the thickness T 2 of the second metal line 102 b.
- the first metal line 102 a and the second metal line 102 b each may be formed of conductive materials.
- the conductive material for forming the first metal line 102 a and the second metal line 102 b may include, but is not limited to, copper, aluminum, tungsten, titanium, gold, silver, molybdenum, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, molybdenum alloys, any other suitable conductive materials, or a combination thereof.
- the first metal line 102 a and the second metal line 102 b each may be formed of a conductive material having a relatively high melting temperature.
- the first metal line 102 a and the second metal line 102 b each may be formed of a conductive material having a melting temperature in a range from about 660° C. to about 3410° C.
- the first metal line 102 a and/or the second metal line 102 b may include multilayer structures.
- FIG. 2A illustrates a cross-sectional view of the metal lines (the first metal line 102 a and the second metal line 102 b ) and the pads (the first pad 104 a and the second pad 104 b ) in the region M in FIG. 1 in accordance with some embodiments.
- the metal line 102 a / 102 b may be a two-layer structure in accordance with some embodiments.
- the metal line 102 a / 102 b may be a coaxial two-layer structure, which includes an inner layer 102 g and an outer layer 102 f .
- the inner layer 102 g is made of aluminum and the outer layer 102 f is made of molybdenum.
- the display substrate 10 also includes a first pad 104 a and a second pad 104 b disposed on the first substrate 100 .
- the first pad 104 a and the second pad 104 b are electrically connected to the first metal line 102 a and the second metal line 102 b respectively.
- the first pad 104 a provides the electrical connection between the electronic device 200 and the first metal line 102 a on the first substrate 100 .
- the second pad 104 b provides the electrical connection between the electronic device 200 and the second metal line 102 b on the first substrate 100 . As shown in FIG.
- the first pad 104 a and the second pad 104 b at least partially overlaps the first metal line 102 a and the second metal line 102 b respectively, so that the electrical connection between the pads 104 a / 104 b and the metal lines 102 a / 102 b may be well maintained.
- the overlap between the pads 104 a / 104 b and the metal lines 102 a / 102 b may assist in the transmission of the electrical signals in the metal lines 102 a / 102 b or reduce the possibility of leakage of electricity.
- FIGS. 2B-2D illustrate the cross-sectional views of the metal lines (the first metal line 102 a and the second metal line 102 b ) and the pads (the first pad 104 a and the second pad 104 b ) in the region M in FIG. 1 in accordance with some embodiments. It should be understood that the elements other than the metal line and the pad are omitted for clarity.
- a portion of the pad overlaps the metal line (the first metal line 102 a or the second metal line 102 b ) in accordance with some embodiments.
- the pad may cover the sidewall and a portion of the top surface of the metal line.
- the entire pad is disposed on the metal line in accordance with some embodiments.
- the sidewall 104 s of the pad may be aligned with the sidewall 102 s of the metal line in accordance with some embodiments (as shown in FIG. 2C ).
- the metal line may further extend toward the center of the electronic device 200 and the sidewall 102 s of the metal line may protrude from the sidewall 104 s of the pad in accordance with some embodiments (as shown in FIG. 2D ).
- FIG. 2E and FIG. 2F illustrate the top views of the metal lines (the first metal line 102 a and the second metal line 102 b ) and the pads (the first pad 104 a and the second pad 104 b ) in the region M in FIG. 1 in accordance with some embodiments.
- the cross-sectional view along the line B-B′ in FIG. 2E may correspond to the cross-sectional views as shown in FIG. 2B and FIG. 2C .
- the cross-sectional view along the line B-B′ in FIG. 2F may correspond to the cross-sectional view as shown in FIG. 2D . Referring to FIGS.
- the pad may entirely overlap one end 102 e of the metal line in accordance with some embodiments.
- the pad may partially overlap one end 102 e of the metal line in accordance with some other embodiments.
- the first pad 104 a and the second pad 104 b may respectively have a thickness T 3 and a thickness T 4 in the X direction of the first substrate 100 .
- the thickness T 3 of the first pad 104 a may be in a range from about 0.2 ⁇ m to about 50 ⁇ m, or from about Sum to about 15 um.
- the thickness T 4 of the second pad 104 b may be in a range from about 0.2 ⁇ m to about 50 ⁇ m, or from about 5 um to about 15 um.
- the thickness T 3 of the first pad 104 a may be the same as or different than the thickness T 4 of the second pad 104 b .
- the thickness T 3 of the first pad 104 a is greater than the thickness T 1 of the first metal line 102 a .
- the thickness T 4 of the second pad 104 b is greater than the thickness T 2 of the second metal line 102 b.
- the first pad 104 a and the second pad 104 b each may be formed of conductive materials.
- the conductive material for forming the first pad 104 a and the second pad 104 b may include, but is not limited to, solder materials, tin, indium, gallium, tin alloys, indium alloys, gallium alloys, gallium-indium alloys or a combination thereof.
- the first pad 104 a and the second pad 104 b each may be formed of conductive materials having a relatively low melting temperature.
- first pad 104 a and the second pad 104 b each may be formed of a conductive material having a relatively low melting temperature compared to the melting temperature of the first metal line 102 a and the second metal line 102 b .
- first pad 104 a and the second pad 104 b each may be formed of conductive materials having a temperature in a range from about 100° C. to about 400° C.
- the first metal line 102 a , the second metal line 102 b , the first pad 104 a and the second pad 104 b may be formed by using chemical vapor deposition, physical vapor deposition, electroplating process, electroless plating process, any other suitable processes, or a combination thereof.
- the chemical vapor deposition may include, but is not limited to, low-pressure chemical vapor deposition (LPCVD), low-temperature chemical vapor deposition (LTCVD), rapid thermal chemical vapor deposition (RTCVD), plasma enhanced chemical vapor deposition (PECVD), or atomic layer deposition (ALD).
- the physical vapor deposition may include, but is not limited to, sputtering, evaporation, or pulsed laser deposition (PLD).
- the electronic device 200 includes a semiconductor die 202 , a first electrode 204 a , a second electrode 204 b , a first dielectric layer 206 , a conductive layer 208 , a first connecting post 210 a , a second connecting post 210 b , and a second dielectric layer 212 .
- the electronic device 200 may include an integrated circuit.
- the electronic device 200 may include, but is not limited to, a digital circuit, an LED, a photodiode, a transistor, or any other suitable electronic devices.
- the electronic device 200 may be a micro LED in accordance with some embodiments. It should be understood that although one electronic device 200 is illustrated in FIG. 1 , there may be more than one electronic device 200 disposed on the first substrate 100 .
- the electronic device 200 is disposed on the first pad 104 a and the second pad 104 b .
- the semiconductor die 202 of the electronic device 200 may include multiple layers of different materials.
- the semiconductor die 202 may include, but is not limited to, semiconductor layers, or quantum well layers.
- the semiconductor layers may be formed of the III-V compounds.
- the III-V compounds may include, but is not limited to, gallium nitride (GaN), indium nitride (InN), aluminum nitride (AlN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), aluminum indium gallium nitride (AlGaInN) or a combination thereof.
- the material of the quantum well layer may include, but is not limited to, indium gallium nitride, a gallium nitride or a combination thereof.
- the semiconductor die 202 may be an organic micro LED die in accordance with some embodiments.
- the semiconductor die 202 may be an inorganic micro LED die in accordance with some embodiments.
- the cross-sectional area of the semiconductor die 202 may have a length ranging from about 1 ⁇ m to about 175 ⁇ m in Y direction and may have a width ranging from about 1 ⁇ m to about 175 ⁇ m in Z direction.
- the semiconductor die 202 may have a size ranging from about 1 ⁇ m ⁇ 1 ⁇ m ⁇ 1 ⁇ m to about 175 ⁇ m ⁇ 175 ⁇ m ⁇ 175 ⁇ m.
- the semiconductor die 202 may be formed by using an epitaxial growth process.
- MOCVD metal organic chemical vapor deposition
- MBE molecular beam epitaxy
- HVPE hydride vapor phase epitaxy
- LPE liquid phase epitaxy
- the first electrode 204 a and the second electrode 204 b may be disposed over the semiconductor die 202 .
- the first electrode 204 a and the second electrode 204 b may serve as the n-electrode and p-electrode of the micro LED respectively.
- the first electrode 204 a and the second electrode 204 b may be formed of metallic conductive materials.
- the metallic conductive material may include, but is not limited to, copper, aluminum, tungsten, titanium, gold, silver, molybdenum, platinum, nickel, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, molybdenum alloys, platinum alloys, nickel alloys, any other suitable conductive materials, or a combination thereof.
- the first electrode 204 a and the second electrode 204 b may be formed of transparent conductive materials, for example, the transparent conductive material (TCO) may include, but is not limited to, indium tin oxide (ITO), tin oxide (SnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tin oxide (ITZO), antimony tin oxide (ATO), antimony zinc oxide (AZO), or a combination thereof.
- the first electrode 204 a and the second electrode 204 b may be formed of a material having a relatively high melting temperature compared with the conductive layer 208 of electronic device 200 .
- the first electrode 204 a and the second electrode 204 b may be formed by using chemical vapor deposition, physical vapor deposition, electroplating process, electroless plating process, any other suitable processes, or a combination thereof.
- the high-k dielectric material may include, but is not limited to, metal oxide, metal nitride, metal silicide, transition metal oxide, transition metal nitride, transition metal silicide, metal oxynitride, metal aluminate, zirconium silicate, zirconium aluminate.
- the first dielectric layer 206 may be formed by using chemical vapor deposition, spin coating, any other suitable processes, or a combination thereof.
- the electronic device 200 includes the conductive layer 208 disposed over the first dielectric layer 206 .
- the conductive layer 208 is in contact with portions of the first electrode 204 a and the second electrode 204 b .
- the conductive layer 208 is electrically connected to the first electrode 204 a and the second electrode 204 b separately.
- the conductive layer 208 includes a first connecting post 210 a and a second connecting post 210 b .
- the first connecting post 210 a and the second connecting post 210 b are each defined as the portion that is substantially below the bottom side 200 b of the electronic device 200 .
- the first connecting post 210 a and the second connecting post 210 b may protrude from the bottom surface 206 b of the first dielectric layer 206 in accordance with some embodiments.
- the first connecting post 210 a and the second connecting post 210 b may also protrude from the bottom surface 202 b of the semiconductor die 202 in accordance with some embodiments.
- the first connecting post 210 a and the second connecting post 210 b extend toward the first substrate 100 .
- the first connecting post 210 a and the second connecting post 210 b extend toward the first pad 104 a and the second pad 104 b respectively.
- first connecting post 210 a is embedded in the first pad 104 a and at least a portion of the second connecting post 210 b is embedded in the second pad 104 b .
- first connecting post 210 a is electrically connected to the first pad 104 a and the second connecting post 210 b is electrically connected to the second pad 104 b .
- the amount of the connecting post may be adjusted according to the needs in some other embodiments.
- the first connecting post 210 a and the second connecting post 210 b are separated apart from each other by a distance D 1 .
- the distance D 1 between the first connecting post 210 a and the second connecting post 210 b is in a range from about 1 um to about 200 um, or from about 2 um to about 50 um.
- the distance D 1 between the first connecting post 210 a and the second connecting post 210 b is defined as the distance between any position within the first connecting post 210 a and any position within the second connecting post 210 b .
- first connecting post 210 a and the second connecting post 210 b may respectively have a height H 1 and a height H 2 in the X direction of the first substrate 100 .
- the height H 1 of the first connecting post 210 a may be in a range from about 0.05 ⁇ m to about 10 ⁇ m, or from about 1 um to about 5 um.
- the height H 2 of the second connecting post 210 b may be in a range from about 0.05 ⁇ m to about 10 ⁇ m, or from about 1 um to about 5 um.
- the first connecting post 210 a , the second connecting post 210 b and the conductive layer 208 are integrally formed.
- the first connecting post 210 a , the second connecting post 210 b and the conductive layer 208 may be a continuous structure.
- the first connecting post 210 a , the second connecting post 210 b and the conductive layer 208 are separately formed.
- the first connecting post 210 a , the second connecting post 210 b and the conductive layer 208 may be independent elements.
- the first connecting post 210 a and the conductive layer 208 may be formed of the same or different materials.
- the second connecting post 210 b and the conductive layer 208 may be formed of the same or different materials.
- the second dielectric layer 212 is formed over the conductive layer 208 .
- the second dielectric layer 212 also covers the first connecting post 210 a and the second connecting post 210 b .
- the second dielectric layer 212 may include, but is not limited to, silicon oxide, silicon nitride, silicon oxynitride, high-k dielectric material, any other suitable dielectric material, or a combination thereof.
- the high-k dielectric material may include, but is not limited to, metal oxide, metal nitride, metal silicide, transition metal oxide, transition metal nitride, transition metal silicide, metal oxynitride, metal aluminate, zirconium silicate, zirconium aluminate.
- the second dielectric layer 212 may be formed by using chemical vapor deposition, spin coating, any other suitable processes, or a combination thereof.
- the display device 10 also includes an adhesive layer 214 disposed between the electronic device 200 and the first substrate 100 .
- the adhesive layer 214 adhere the electronic device 200 and the first substrate 100 together and the first connecting post 210 a and the second connecting post 210 b are held in physical contact with the first pad 104 a and the second pad 104 b on the first substrate 100 respectively.
- the adhesive layer 214 may be formed of adhesive materials.
- the adhesive layer 214 may be an insulator.
- the material of the adhesive layer 214 may include, but is not limited to, heat-curing adhesives, light-curing adhesives, or a combination thereof.
- the light-curing adhesives may include UV light-curing adhesives or visible light-curing adhesives.
- the adhesive layer 214 may be formed by using coating, spray coating, inkjet printing, any other suitable methods, or a combination thereof, but is not limited thereto. As shown in FIG. 1 , the adhesive layer 214 may be formed in the shape of a drop in accordance with some embodiments.
- the temperature of the heating process may be adjusted within a range where the pads are substantially melted and the connecting posts are not melted.
- the hardness of the connecting posts is higher than the hardness of the pads so that the connecting posts can be embedded into the pads.
- the melting temperature of the metal lines is higher than the melting temperature of the pads (the first pad 104 a and the second pad 104 b ) in accordance with some embodiments.
- the ratio of the melting temperature of the metal lines to the melting temperature of the pads is in a range from about 1.5 to about 35, or from about 1.5 to about 17 in accordance with some embodiments. It should be noted that the ratio of the melting temperature of the metal lines to the melting temperature of the pads should not be too small, or the metal lines may also be melted or deformed during the heating process and may cause the risk of broken metal lines. The ratio of the melting temperature of the metal lines to the melting temperature of the pads should not be too great, or the difference between the coefficient of expansion of the metal lines and the coefficient of expansion of the pads may be too great so that the metal lines and the pads may be peeled off.
- the pads may be formed of a conductive material having a relatively low melting temperature compared to the material of the metal lines 102 a / 102 b .
- the conductive material having a relatively low melting temperature for forming the pad may include, but is not limited to, solder materials, tin, indium, gallium, tin alloys, indium alloys, gallium alloys, or gallium-indium alloys.
- the connecting posts (the first connecting post 210 a and the second connecting post 210 b ) may be formed of a conductive material having a relatively high melting temperature compared to the material of the pads.
- the conductive material having a relatively high melting temperature for forming the metal lines may include, but is not limited to, copper, aluminum, tungsten, titanium, gold, silver, molybdenum, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, or molybdenum alloys.
- FIG. 3 illustrates a cross-sectional view of the display device 20 in accordance with some embodiments of the present disclosure.
- the same or similar elements or layers in above and below contexts are represented by the same or similar reference numerals.
- the materials, manufacturing methods and functions of these elements or layers are the same or similar to those described above, and thus will not be repeated herein.
- the difference between the display device 20 in FIG. 3 and the display device 10 in FIG. 1 is that the first connecting post 210 a and the second connecting post 210 b have a different profile.
- the display device 20 may have the bell-shaped first connecting post 210 a and bell-shaped second connecting post 210 b .
- the first connecting post 210 a and the second connecting post 210 b include a blunt end.
- the second connecting portions 210 a / 210 b having blunt ends can further reduce the accumulation of static-electricity than the connecting portions 210 a / 210 b having sharp ends, and can increase the efficiency of electrical connection between the connecting portions 210 a / 210 b and pads 104 a / 104 b . This is because that the connecting portions 210 a / 210 b having sharp ends may generate a corona discharge to damage the pads 104 a / 104 b , and the surfaces of the pads 104 a / 104 b may be oxidized.
- the connecting posts 201 a / 201 b may have any other suitable shapes as long as the connecting posts protrude from the bottom side 200 b of the electronic device 200 and can be embedded in the pads.
- the first connecting post 210 a and the second connecting post 210 b may have tapered shapes, triangular shapes, rectangular shapes, but they are not limited thereto.
- FIG. 4 illustrates a cross-sectional view of the display device 30 in accordance with some embodiments of the present disclosure.
- the difference between the display device 30 in FIG. 4 and the display device 10 in FIG. 1 is that the materials of the first connecting post 210 a and the second connecting post 210 b are different than that of the conductive layer 208 in the embodiment shown in FIG. 4 .
- the connecting posts 210 a / 210 b and the conductive layer 208 may be formed separately in accordance with some embodiments.
- FIG. 5 illustrates a cross-sectional view of the display device 40 in accordance with some embodiments of the present disclosure.
- the difference between the display device 40 in FIG. 5 and the display device 30 in FIG. 4 is that the first connecting post 210 a and the second connecting post 210 b include multilayer structures in the embodiment shown in FIG. 5 .
- the first connecting post 210 a includes a first layer 210 a ′ and a second layer 210 a ′′
- the second connecting post 210 b includes a first layer 210 b ′ and a second layer 210 b ′′.
- the first layer 210 a ′ of the first connecting post 210 a and the first layer 210 b ′ of the second connecting post 210 b may be formed of the same material as that of the conductive layer 208 in accordance with some embodiments.
- the first layer 210 a ′ and the first layer 210 b ′ may be formed of a conductive material having a relatively high melting temperature.
- the second layer 210 a ′′ of the first connecting post 210 a and the second layer 210 b ′′ of the second connecting post 210 b may be formed of a conductive material having a relatively low melting temperature compared to the material of the first layer 210 a ′ and the first layer 210 b ′ respectively.
- the second layer 210 a ′′ and the second layer 210 b ′′ is formed of a conductive material having a relatively high melting temperature compared to the material of the pads 104 a / 104 b.
- FIG. 6 illustrates a cross-sectional view of the display device 50 in accordance with some embodiments of the present disclosure.
- the adhesive layer 214 is filled in the space between the electronic device 200 and the first substrate 100 in the embodiment shown in FIG. 6 .
- the adhesive layer 214 is substantially filled in the space defined by the semiconductor die 202 , the first dielectric layer 206 , the connecting posts 210 a / 210 b , the pads 104 a / 104 b and the first substrate 100 .
- the adhesive layer 214 is in physical contact with the first pad 104 a and the second pad 104 b .
- the adhesive layer 214 is also in physical contact with the first connecting post 210 a and the second connecting post 210 b.
- FIG. 7 illustrates a cross-sectional view of the display device 60 in accordance with some embodiments of the present disclosure.
- the difference between the display device 60 in FIG. 7 and the display device 50 in FIG. 6 is that the adhesive layer 214 further extends over the pads 104 a / 104 b located outside the connecting posts 210 a / 210 b in the embodiment shown in FIG. 7 .
- the adhesive layer 214 substantially covers the entire first pad 104 a and the second pad 104 b .
- the edge of the adhesive layer 214 may be substantially aligned with the edge of the pads 104 a / 104 b.
- FIGS. 8A-8E illustrate the cross-sectional views of the region M in FIG. 1 in accordance with some embodiments. It should be understood that some of the elements are omitted for clarity.
- the connecting posts (the first connecting post 210 a and the second connecting post 210 b ) are embedded in the pads (the first pad 104 a and the second pad 104 b ). Therefore, a portion of the pad will be extruded and a bulging portion is formed around the position where the connecting post embeds the pad. As shown in FIG.
- the pad (the first pad 104 a or the second pad 104 b ) includes a bulging portion 104 p around the portion of the connecting post (the first connecting post 210 a or the second connecting post 210 b ) that is embedded in the pad in accordance with some embodiments.
- the pad in some embodiments where the adhesive layer 214 is filled in the space between the electronic device 200 and the first substrate 100 (as shown in FIG. 6 ), the pad includes a bulging portion 104 p , and the adhesive layer 214 also includes a swelling portion 214 p around the portion of the connecting post that is embedded in the pad. As shown in FIG.
- the adhesive layer 214 in some embodiments where the adhesive layer 214 is filled in the space between the electronic device 200 and the first substrate 100 (as shown in FIG. 6 ), the adhesive layer 214 includes a swelling portion 214 p around the connecting post while the pad does not extrude.
- the adhesive layer 214 in some other embodiments where the adhesive layer 214 substantially covers the entire pad (as shown in FIG. 7 ), the pad includes a bulging portion 104 p , and the adhesive layer 214 also includes a swelling portion 214 p around the portion of the connecting post that is embedded in the pad.
- FIG. 8E in some other embodiments where the adhesive layer 214 substantially covers the entire pad (as shown in FIG. 7 ), the adhesive layer 214 includes a swelling portion 214 p around the connecting post while the pad is not extruded.
- the bulging portion 104 p of the pad has a height H 3 (as shown in FIG. 8A ).
- the height H 3 may be defined as the distance between the highest point of the bulging portion 104 p and the lowest point of the bulging portion 104 p in the X direction of first substrate 100 .
- the height H 3 of the bulging portion 104 p may be in a range from about 0.1 ⁇ m to about 5 ⁇ m, or from about 1 um to about 3 um.
- the pad and the adhesive layer 214 include the bulging portion 104 p and the swelling portion 214 p respectively, the bulging portion 104 p and the swelling portion 214 p have a total height H 3 ′ (as shown in FIG.
- the height H 3 ′′ may be defined as the distance between the highest point of the swelling portion 214 p and the lowest point of the swelling portion 214 p in the X direction of first substrate 100 .
- the height H 3 ′′ of the swelling portion 214 p may be in a range from about 0.1 ⁇ m to about 5 ⁇ m, or from about 1 um to about 3 um.
- the portion of the connecting post 210 a / 210 b that is embedded in the pad 104 a / 104 b has a height H 4 (as shown in FIG. 8A ). In some embodiments, the portion of the connecting post 210 a / 210 b that is embedded in the pad 104 a / 104 b and the adhesive layer 214 has a height H 4 (as shown in FIG. 8D ). In some embodiments, the portion of the connecting post 210 a / 210 b that is embedded in the adhesive layer 214 has a height H 4 (as shown in FIG. 8E ).
- the first connecting post 210 a and the second connecting post 210 b may respectively have a height H 1 and a height H 2 in the X direction of the first substrate 100 .
- the ratio of the height H 4 of the portion of the connecting post 210 a / 210 b that is embedded in the pad 104 a / 104 b and/or the adhesive layer 214 to the height H 1 of the first connecting post 210 a is in a range from 0.1 to 1 (i.e. 0 . 1 H 4 /H 1 ⁇ 1).
- the ratio of the height H 4 of the portion of the connecting post 210 a / 210 b that is embedded in the pad 104 a / 104 b and/or the adhesive layer 214 to the height H 2 of the second connecting post 210 b is in a range from 0.1 to 1 (i.e. 0.1 ⁇ H 4 /H 2 ⁇ 1).
- FIG. 9 illustrates a cross-sectional view of the display device 70 in accordance with some embodiments of the present disclosure.
- the electronic device 200 is arranged in flip chip type in the embodiment shown in FIG. 9 .
- the conductive layer 208 may directly serve as the connecting posts to embed in the pads 104 a / 104 b .
- the electronic device 200 may be electrically connected to the pads 104 a / 104 b by the portion of the conductive layer 208 that is embedded in the pad.
- FIG. 10 illustrates a cross-sectional view of the display device 80 in accordance with some embodiments of the present disclosure.
- the display device 80 includes an integrated electronic component 200 A and a second substrate 300 disposed below the integrated electronic component 200 A.
- the integrated electronic component 200 A is substantially the same as the display device 10 described in FIG. 1 .
- the integrated electronic component 200 A includes the first substrate 100 , the first metal line 102 a and the second metal line 102 b disposed on the first substrate 100 , and the first pad 104 a and the second pad 104 b disposed on the first substrate 100 .
- the first pad 104 a and the second pad 104 b are electrically connected to the first metal line 102 a and the second metal line 102 b respectively.
- the integrated electronic component 200 A also includes the electronic device 200 disposed on the first pad 104 a and the second pad 104 b .
- the electronic device 200 includes the first connecting post 210 a and the second connecting post 210 b , and a portion of the first connecting post 210 a is embedded in the first pad 104 a and a portion of the second connecting post 210 b is embedded in the second pad 104 b .
- the materials, manufacturing methods and functions of these elements are the same or similar to those described above, and thus are not repeated herein.
- the second substrate 300 may serve as a destination substrate (such as an array substrate) of the display device 80 .
- the first substrate 100 serves as an intermediate substrate to carry the elements formed thereon to the destination substrate (e.g., the second substrate 300 ).
- a plurality of electronic devices 200 are disposed on the first substrate 100 .
- the electronic device 200 may include, but is not limited to, a digital circuit, an LED, a photodiode, a transistor, or any other suitable electronic devices.
- the electronic device 200 may be a micro LED in accordance with some embodiments.
- the electronic device 200 further includes at least one integrated circuit 400 disposed on the first substrate 100 .
- the electronic device 200 includes a circuit having multiple integrated circuits, other electronic elements or other optoelectronic elements and conductive wires interconnecting the multiple electronic elements to form a circuit on the first substrate 100 .
- the first substrate 100 may carry the integrated electronic component 200 A where multiple elements are formed and disposed on the second substrate 300 , and thus may reduce the times that are required for the transfer.
- the material of the second substrate 300 may include, but is not limited to, glass, quartz, sapphire, polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), rubbers, glass fibers, other polymer materials, any other suitable substrate material, or a combination thereof.
- the second substrate 300 may be formed of a metal-glass fiber composite plate, a metal-ceramic composite plate, a printed circuit board, or any other suitable material, but it is not limited thereto.
- the material of the second substrate 300 may be the same as or different than the material of the first substrate 100 .
- the display device 80 also includes a third metal line 302 a and a fourth metal line 302 b disposed on the second substrate 300 .
- the third metal line 302 a and the fourth metal line 302 b may be any conductive element on the second substrate 300 .
- the third metal line 302 a and the fourth metal line 302 b each may be the conductive elements of the circuit on the array substrate.
- the third metal line 302 a and the fourth metal line 302 b may be the data line or scan line on the array substrate.
- the third metal line 302 a and the fourth metal line 302 b may respectively have a thickness T 5 and a thickness T 6 in the X direction of the first substrate 100 .
- the thickness T 5 of the third metal line 302 a may be in a range from about 0.1 um to about 1 um, or from about 0.2 um to about 0.6 um. In some embodiments, the thickness T 6 of the fourth metal line 302 b may be in a range from about 0.1 um to about 1 um, or from about 0.2 um to about 0.6 um. The thickness T 5 of the third metal line 302 a may be the same with or different from the thickness T 6 of the fourth metal line 302 b.
- the third metal line 302 a and the fourth metal line 302 b each may be formed of a conductive material having a melting temperature in a range from about 660° C. to about 3410° C.
- the third metal line 302 a and/or the fourth metal line 302 b may include multilayer structures.
- the display device 80 also includes a third pad 304 a and a fourth pad 304 b disposed on the second substrate 300 .
- the third pad 304 a and the fourth pad 304 b are electrically connected to the third metal line 302 a and the fourth metal line 302 b respectively.
- the third pad 304 a provides the electrical connection between the integrated electronic component 200 A and the third metal line 302 a on the second substrate 300 .
- the fourth metal line 302 b provides the electrical connection between the integrated electronic component 200 A and the fourth metal line 302 b on the second substrate 300 . As shown in FIG.
- the third pad 304 a and the fourth pad 304 b at least partially overlaps the third metal line 302 a and the fourth metal line 302 b respectively, so that the electrical connection between the pads 304 a / 304 b and the metal lines 302 a / 302 b may be well maintained.
- the overlap between the pads and the metal lines may assist in the transmission of the electrical signals in the metal lines or reduce the possibility of leakage of electricity.
- the third pad 304 a and the fourth pad 304 b may respectively have a thickness T 7 and a thickness T 8 in the X direction of the first substrate 100 .
- the thickness T 7 of the third pad 304 a may be in a range from about 0.2 um to about 50 um, or from about Sum to about 15 um.
- the thickness T 8 of the fourth pad 304 b may be in a range from about 0.2 um to about 50 um, or from about Sum to about 15 um.
- the thickness T 7 of the third pad 304 a may be the same as or different than the thickness T 8 of the fourth pad 304 b .
- the thickness T 7 of the third pad 304 a is greater than the thickness T 5 of the third metal line 302 a .
- the thickness T 8 of the fourth pad 304 b is greater than the thickness T 6 of the fourth metal line 302 b .
- an area (or a size) of the third pad 304 a is greater than an area (or a size) of the first pad 104 a in accordance with some embodiments.
- an area (or a size) of the fourth pad 304 b is greater than an area (or a size) of the second pad 104 b in accordance with some embodiments.
- the third pad 304 a and the fourth pad 304 b each may be formed of conductive materials.
- the conductive material for forming the third pad 304 a and the fourth pad 304 b may include, but is not limited to, solder materials, tin, indium, gallium, tin alloys, indium alloys, gallium alloys, gallium-indium alloys or a combination thereof.
- the third pad 304 a and the fourth pad 304 b each may be formed of conductive materials having a relatively low melting temperature.
- the third pad 304 a and the fourth pad 304 b each may be formed of a conductive material having a relatively low melting temperature compared to the melting temperature of the third metal line 302 a and the fourth metal line 302 b .
- the third pad 304 a and the fourth pad 304 b each may be formed of conductive materials having a temperature in a range from about 100° C. to about 400° C.
- the first metal line 102 a of the integrated electronic component 200 A further includes a third connecting post 310 a and the second metal line 102 b of the integrated electronic component 200 A further includes a fourth connecting post 310 b .
- the third connecting post 310 a and the fourth connecting post 310 b are electrically connected to the first metal line 102 a and the second metal line 102 b respectively.
- the first metal line 102 a and the second metal line 102 b extend from the first substrate 100 toward the second substrate 300 to provide the electrical connection between the integrated electronic component 200 A and the second substrate 300 .
- the third connecting post 310 a and the fourth connecting post 310 b extend toward the first substrate 100 .
- the third connecting post 310 a and the fourth connecting post 310 b extend toward the third pad 304 a and the fourth pad 304 b respectively.
- the third connecting post 310 a and the fourth connecting post 310 b are in contact with the third pad 304 a and the fourth pad 304 b respectively.
- at least a portion of the third connecting post 310 a is embedded in the third pad 304 a and at least a portion of the fourth connecting post 310 b is embedded in the fourth pad 304 b .
- the third connecting post 310 a is electrically connected to the third pad 304 a and the fourth connecting post 310 b is electrically connected to the fourth pad 104 d.
- the connecting posts (the third connecting post 310 a and the fourth connecting post 310 b ) and the metal lines (the first metal line 102 a and the second metal line 102 b ) are integrally formed.
- the connecting posts and the metal lines may be a continuous structure. In some other embodiments, the connecting posts and the metal lines are separately formed.
- the connecting posts and the metal lines may be independent elements.
- the connecting posts (the third connecting post 310 a and the fourth connecting post 310 b ) and the metal lines (the first metal line 102 a and the second metal line 102 b ) may be formed of the same or different materials.
- the third connecting post 310 a and the fourth connecting post 310 b may be formed of the same or different materials.
- the third connecting post 310 a and the fourth connecting post 310 b each may be formed of conductive materials.
- the conductive material for forming the third connecting post 310 a and the fourth connecting post 310 b may include, but is not limited to, copper, aluminum, tungsten, titanium, gold, silver, molybdenum, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, molybdenum alloys, any other suitable conductive materials, or a combination thereof.
- the third connecting post 310 a and the fourth connecting post 310 b each may be formed of a conductive material having a relatively high melting temperature.
- the third connecting post 310 a and the fourth connecting post 310 b each may be formed of a conductive material having a melting temperature in a range from about 660° C. to about 3410° C.
- the third connecting post 310 a and the fourth connecting post 310 b each may be formed of a conductive material having a relatively high melting temperature compared to the material of the third pad 304 a and the fourth pad 304 b .
- the first metal line 102 a and the second metal line 102 b each may be formed of a conductive material having a relatively high melting temperature compared to the material of the third pad 304 a and the fourth pad 304 b.
- the first connecting post 210 a and the second connecting post 210 b are separated apart from each other by a distance D 1 .
- the distance D 1 between the first connecting post 210 a and the second connecting post 210 b is in a range from about 1 um to about 200 um, or from about 2 um to about 50 um.
- the third connecting post 310 a and the fourth connecting post 310 b are separated apart from each other by a distance D 2 .
- the distance D 2 between the third connecting post 310 a and the fourth connecting post 310 b is in a range from about 3 um to about 600 um, or from about 6 um to about 150 um.
- the distance D 2 between the third connecting post 310 a and the fourth connecting post 310 b is greater than the distance D 1 between the first connecting post 210 a and the second connecting post 210 b .
- the width D 4 in Y direction of the third connecting post 310 a may be greater than the width D 3 in Y direction of the first connecting post 210 a .
- the size of the fourth connecting post 310 b may be greater than the size of the second connecting post 210 b.
- the melting temperature of the connecting posts is higher than the melting temperature of the pads (the third pad 304 a and the fourth pad 304 b ) in accordance with some embodiments.
- the melting temperature of the metal lines is higher than the melting temperature of the pads (the first pad 104 a and the second pad 104 b ).
- the ratio of the melting temperature of the metal lines to the melting temperature of the pads is in a range from about 1.5 to about 35, or from about 1.5 to about 17 in accordance with some embodiments.
- the ratio of the melting temperature of the metal lines to the melting temperature of the pads should not be too small, or the metal lines may also be melted or deformed during the heating process and may cause the risk of broken metal lines.
- the ratio of the melting temperature of the metal lines to the melting temperature of the pads should not be too great, or the difference between the coefficient of expansion of the metal lines and the coefficient of expansion of the pads may be too great so that the metal lines and the pads may be peeled off.
- the pads may be formed of a conductive material having a relatively low melting temperature compared to the material of the metal lines.
- the conductive material having a relatively low melting temperature for forming the pad may include, but is not limited to, solder materials, tin, indium, gallium, tin alloys, indium alloys, gallium alloys, or gallium-indium alloys.
- the connecting posts (the third connecting post 310 a and the fourth connecting post 310 b ) may be formed of a conductive material having a relatively high melting temperature compared to the material of the pads.
- the conductive material having a relatively high melting temperature for forming the connecting posts may include, but is not limited to, copper, aluminum, tungsten, titanium, gold, silver, molybdenum, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, or molybdenum alloys.
- the metal lines (the third metal line 302 a and the fourth metal line 302 b ) may also be formed of a conductive material having a relatively high melting temperature compared to the material of the pads.
- the conductive material having a relatively high melting temperature for forming the metal lines may include, but is not limited to, copper, aluminum, tungsten, titanium, gold, silver, molybdenum, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, or molybdenum alloys.
- the display device 80 also includes an adhesive layer 314 disposed between the first substrate 100 and the second substrate 300 .
- the adhesive layer 314 adhere the first substrate 100 and the second substrate 300 together and the third connecting post 310 a and the fourth connecting post 310 b are held in physical contact with the third pad 304 a and the fourth pad 304 b on the second substrate 300 respectively.
- the adhesive layer 314 may be formed of adhesive materials.
- the adhesive layer 314 may be an insulator.
- the material of the adhesive layer 314 may include, but is not limited to, heat-curing adhesives, light-curing adhesives, or a combination thereof.
- the light-curing adhesives may include UV light-curing adhesives or visible light-curing adhesives.
- the material of the adhesive layer 314 may be the same as or different than the material of the adhesive layer 214 .
- FIGS. 11A-11C illustrate the diagrams showing the transfer process of the electronic devices to the destination substrate in accordance with some embodiments of the present disclosure.
- the first substrate 100 may include multiple electronic devices 200 formed thereon. It should be understood that although only the electronic devices 200 are illustrated in FIG. 11A , the first substrate 100 may actually include various elements formed thereon (as shown in the FIG. 10 ). In this embodiment, the first substrate 100 serves as an intermediate substrate to gather the various elements such as the electronic devices 200 first and then transfer these elements to the second substrate 300 (e.g. a destination substrate).
- the electronic devices 200 may be the micro LEDs emitting red light, green light, blue light, or a combination thereof.
- more than one intermediate substrate may be transferred to the second substrate 300 and the intermediate substrates may carry different electronic devices.
- the first substrate 100 , 100 ′ and 100 ′′ may carry the different electronic devices 200 , 200 ′ and 200 ′′ respectively, and the electronic devices 200 , 200 ′ and 200 ′′ may be integrated on the second substrate 300 first.
- the second substrate 300 encompassing the integrated electronic component then may be transferred to another destination substrate.
- the electronic devices 200 , 200 ′ and 200 ′′ may be the micro LEDs emitting red light, green light and blue light respectively.
- the small electronic devices may be integrated on the intermediate substrate first and then the intermediate substrate carrying the integrated small electronic devices can be transferred to a destination substrate (e.g. an array substrate of the display device). Therefore, compared with transferring the small electronic devices one by one, the times that are required for transfer the small electronic device by an intermediate substrate are greatly reduced.
- the present disclosure provides a structure for improving the efficiency of the electrical connection between relatively small electronic devices such as micro LEDs or integrated electronic components and a relatively large destination substrate such as an array substrate.
- the display device provided in the present disclosure includes the connecting posts that can be securely embedded in the conductive elements of the destination substrate, such as the pads for the interconnection.
- the electronic devices can therefore maintain effective electrical connection to the circuit system on the destination substrate.
- the configuration of the intermediate substrate in the display device may reduce the times that are required for the transfer of the small electronic devices to the destination substrate in accordance with some embodiments of the present disclosure.
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Abstract
Description
- The present disclosure relates to a display device, and in particular it relates to the interconnection of the electronic components in the display device.
- Electronic products that come with a display panel, such as smartphones, tablets, notebooks, monitors, and TVs, have become indispensable necessities in modern society. With the flourishing development of such portable electronic products, consumers have high expectations regarding the quality, the functionality, and the price of such products. The development of next-generation display devices has been focused on techniques that are energy-saving and environmentally friendly.
- Micro LED technology is an emerging flat panel display technology. Micro LED displays drive an array of addressed micro LEDs. Micro LED displays may produce seamless images with a wide viewing angle, high brightness, and high contrast. However, due to the small size of a micro LED (e.g., in a range from about 1 um to about 200 um), integration and packaging issues are one of the main obstacles for commercialization of such products.
- Using current manufacturing methods, micro LEDs are generally formed and divided into several micro LED dies (e.g., micro-lighting dies) on a wafer substrate and then transferred to another destination substrate. For example, the driving circuits and related circuits are formed on the destination substrate to provide an array substrate (e.g., a TFT array substrate), and the micro LED dies are then mounted on the array substrate. Due to the small size of micro LED dies, transferring the micro LED dies to the destination substrate is a burdensome task. In addition, the electrical connections between the micro LED (including the integrated electronic component where these dies are formed) and the destination substrate is also a problem that needs to be taken care of.
- Accordingly, it is desirable to develop a structure and method that can effectively maintain or improve the efficiency of the transfer, or improve the electrical interconnection of a small electronic component such as a micro LED to a destination substrate.
- In accordance with some embodiments of the present disclosure, a display device is provided. The display device includes a substrate and a first metal line and a second metal line disposed on the substrate. The display device also includes a first pad and a second pad disposed on the substrate and electrically connected to the first metal line and the second metal line respectively. The display device further includes an electronic device disposed on the first pad and the second pad. The electronic device includes a first connecting post and a second connecting post, wherein a distance between the first connecting post and the second connecting post is in a range from 1 um to 200 um. A portion of the first connecting post is embedded in the first pad and a portion of the second connecting post is embedded in the second pad.
- In accordance with some embodiments of the present disclosure, a display device is provided. The display device includes an integrated electronic component, a second substrate disposed below the integrated electronic component, and a third pad and a fourth pad disposed on the second substrate and electrically connected to the first metal line and the second metal line respectively. The integrated electronic component includes a first substrate and a first metal line and a second metal line disposed on the first substrate. The integrated electronic component also includes a first pad and a second pad disposed on the first substrate and electrically connected to the first metal line and the second metal line respectively. The integrated electronic component further includes an electronic device disposed on the first pad and the second pad, and the electronic device includes a first connecting post and a second connecting post. A portion of the first connecting post is embedded in the first pad and a portion of the second connecting post is embedded in the second pad. The first metal line includes a third connecting post and the second metal line includes a fourth connecting post. The third connecting post and the fourth connecting post are in contact with the third pad and the fourth pad respectively.
- A detailed description is given in the following embodiments with reference to the accompanying drawings.
- The disclosure may be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein:
-
FIG. 1 illustrates the cross-sectional views of the display device in accordance with some embodiments of the present disclosure. -
FIGS. 2A-2D illustrate the cross-sectional views of the metal lines and the pads in the region M inFIG. 1 in accordance with some embodiments. -
FIG. 2E andFIG. 2F illustrate the top views of the metal lines and the pads in the region M inFIG. 1 in accordance with some embodiments. -
FIGS. 3-7 illustrate the cross-sectional views of the display device in accordance with some embodiments of the present disclosure. -
FIGS. 8A-8E illustrate the cross-sectional views of the region M inFIG. 1 in accordance with some embodiments. -
FIG. 9 illustrate a cross-sectional view of the display device in accordance with some embodiments of the present disclosure. -
FIG. 10 illustrates a cross-sectional view of the display device in accordance with some embodiments of the present disclosure. -
FIGS. 11A-11C illustrate the diagrams showing the transfer process of the electronic devices to the destination substrate in accordance with some embodiments of the present disclosure. - The display device of the present disclosure and the manufacturing method thereof are described in detail in the following description. In the following detailed description, for purposes of explanation, numerous specific details and embodiments are set forth in order to provide a thorough understanding of the present disclosure. The specific elements and configurations described in the following detailed description are set forth in order to clearly describe the present disclosure. It will be apparent, however, that the exemplary embodiments set forth herein are used merely for the purpose of illustration, and the inventive concept may be embodied in various forms without being limited to those exemplary embodiments. In addition, the drawings of different embodiments may use like and/or corresponding numerals to denote like and/or corresponding elements in order to clearly describe the present disclosure. However, the use of like and/or corresponding numerals in the drawings of different embodiments does not suggest any correlation between different embodiments. In addition, in this specification, expressions such as “first material layer disposed on/over a second material layer”, may indicate the direct contact of the first material layer and the second material layer, or it may indicate a non-contact state with one or more intermediate layers between the first material layer and the second material layer. In the above situation, the first material layer may not be in direct contact with the second material layer.
- It should be noted that the elements or devices in the drawings of the present disclosure may be present in any form or configuration known to those with ordinary skill in the art. In addition, the expressions “a layer overlying another layer”, “a layer is disposed above another layer”, “a layer is disposed on another layer” and “a layer is disposed over another layer” may indicate that the layer is in direct contact with the other layer, or that the layer is not in direct contact with the other layer, there being one or more intermediate layers disposed between the layer and the other layer.
- In addition, in this specification, relative expressions are used. For example, “lower”, “bottom”, “higher” or “top” are used to describe the position of one element relative to another. It should be appreciated that if a device is flipped upside down, an element that is “lower” will become an element that is “higher”.
- It should be understood that, although the terms first, second, third etc. may be used herein to describe various elements, components, regions, layers, portions and/or sections, these elements, components, regions, layers, portions and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, portion or section from another element, component, region, layer or section. Thus, a first element, component, region, layer, portion or section discussed below could be termed a second element, component, region, layer, portion or section without departing from the teachings of the present disclosure.
- It should be understood that this description of the exemplary embodiments is intended to be read in connection with the accompanying drawings, which are to be considered part of the entire written description. The drawings are not drawn to scale. In addition, structures and devices are shown schematically in order to simplify the drawing.
- The terms “about” and “substantially” typically mean +/−20% of the stated value, more typically +/−10% of the stated value, more typically +/−5% of the stated value, more typically +/−3% of the stated value, more typically +/−2% of the stated value, more typically +/−1% of the stated value and even more typically +/−0.5% of the stated value. The stated value of the present disclosure is an approximate value. When there is no specific description, the stated value includes the meaning of “about” or “substantially”.
- Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It should be appreciated that, in each case, the term, which is defined in a commonly used dictionary, should be interpreted as having a meaning that conforms to the relative skills of the present disclosure and the background or the context of the present disclosure, and should not be interpreted in an idealized or overly formal manner unless so defined.
- In addition, in some embodiments of the present disclosure, terms concerning attachments, coupling and the like, such as “connected” and “interconnected,” refer to a relationship wherein structures are secured or attached to one another either directly or indirectly through intervening structures, as well as both movable or rigid attachments or relationships, unless expressly described otherwise.
- The present disclosure provides a structure for improving the efficiency of the electrical connection between relatively small electronic devices such as micro LEDs, organic LEDs, quautum-dot LEDs or integrated electronic components and a relatively large destination substrate such as an array substrate. The display device provided in the present disclosure includes the connecting posts that can be securely embedded in the conductive elements of the destination substrate, such as the pads for the interconnection. The electronic devices can therefore maintain effective electrical connection to the circuit system on the destination substrate. In addition, the configuration of the intermediate substrate in the display device may reduce the times that are required for the transfer of the small electronic devices to the destination substrate in accordance with some embodiments of the present disclosure.
-
FIG. 1 illustrates a cross-sectional view of thedisplay device 10 in accordance with some embodiments of the present disclosure. It should be understood that additional features may be added to the display device in accordance with some embodiments of the present disclosure. Some of the features described below may be replaced or eliminated in accordance with some embodiments of the present disclosure. - Referring to
FIG. 1 , thedisplay device 10 includes afirst substrate 100 and anelectronic device 200 disposed on thefirst substrate 100. Thefirst substrate 100 may be an intermediate substrate or a destination substrate (such as an array substrate) of thedisplay device 10. In some embodiments, the material of thefirst substrate 100 may include, but is not limited to, glass, quartz, sapphire, polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), rubbers, glass fibers, other polymer materials, any other suitable substrate material, or a combination thereof. In some embodiments, thefirst substrate 100 may be formed of a metal-glass fiber composite plate, a metal-ceramic composite plate, a printed circuit board, or any other suitable material, but it is not limited thereto. - The
display substrate 10 also includes afirst metal line 102 a and asecond metal line 102 b disposed on thefirst substrate 100. Thefirst metal line 102 a and thesecond metal line 102 b may be any conductive element on thefirst substrate 100. For example, thefirst metal line 102 a and thesecond metal line 102 b each may be the conductive elements of the circuit on the array substrate. In some embodiments, thefirst metal line 102 a and thesecond metal line 102 b may be the data line or scan line on the array substrate. Thefirst metal line 102 a and thesecond metal line 102 b may respectively have a thickness T1 and a thickness T2 in the X direction of thefirst substrate 100, for example, in the X direction as shown inFIG. 1 , and X direction is the normal direction of thefirst substrate 100. In some embodiments, the thickness T1 of thefirst metal line 102 a may be in a range from about 0.1 μm to about 1 μm, or from about 0.2 um to about 0.6 um. In some embodiments, the thickness T2 of thesecond metal line 102 b may be in a range from about 0.1 μm to about 1 μm, or from about 0.2 um to about 0.6 um. The thickness T1 of thefirst metal line 102 a may be the same as or different than the thickness T2 of thesecond metal line 102 b. - In some embodiments, the
first metal line 102 a and thesecond metal line 102 b each may be formed of conductive materials. The conductive material for forming thefirst metal line 102 a and thesecond metal line 102 b may include, but is not limited to, copper, aluminum, tungsten, titanium, gold, silver, molybdenum, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, molybdenum alloys, any other suitable conductive materials, or a combination thereof. In some embodiments, thefirst metal line 102 a and thesecond metal line 102 b each may be formed of a conductive material having a relatively high melting temperature. In some embodiments, thefirst metal line 102 a and thesecond metal line 102 b each may be formed of a conductive material having a melting temperature in a range from about 660° C. to about 3410° C. - In addition, in some embodiments, the
first metal line 102 a and/or thesecond metal line 102 b may include multilayer structures. For example,FIG. 2A illustrates a cross-sectional view of the metal lines (thefirst metal line 102 a and thesecond metal line 102 b) and the pads (thefirst pad 104 a and thesecond pad 104 b) in the region M inFIG. 1 in accordance with some embodiments. As shown inFIG. 2A , themetal line 102 a/102 b may be a two-layer structure in accordance with some embodiments. In particular, themetal line 102 a/102 b may be a coaxial two-layer structure, which includes aninner layer 102 g and anouter layer 102 f. In certain embodiments, theinner layer 102 g is made of aluminum and theouter layer 102 f is made of molybdenum. - Next, referring back to
FIG. 1 , thedisplay substrate 10 also includes afirst pad 104 a and asecond pad 104 b disposed on thefirst substrate 100. Thefirst pad 104 a and thesecond pad 104 b are electrically connected to thefirst metal line 102 a and thesecond metal line 102 b respectively. In other words, thefirst pad 104 a provides the electrical connection between theelectronic device 200 and thefirst metal line 102 a on thefirst substrate 100. Thesecond pad 104 b provides the electrical connection between theelectronic device 200 and thesecond metal line 102 b on thefirst substrate 100. As shown inFIG. 1 , thefirst pad 104 a and thesecond pad 104 b at least partially overlaps thefirst metal line 102 a and thesecond metal line 102 b respectively, so that the electrical connection between thepads 104 a/104 b and themetal lines 102 a/102 b may be well maintained. In particular, the overlap between thepads 104 a/104 b and themetal lines 102 a/102 b may assist in the transmission of the electrical signals in themetal lines 102 a/102 b or reduce the possibility of leakage of electricity. - The configurations of the
metal lines 102 a/102 b and thepads 104 a/104 b in accordance with some embodiments of the present disclosure are described in detail inFIGS. 2B-2D .FIGS. 2B-2D illustrate the cross-sectional views of the metal lines (thefirst metal line 102 a and thesecond metal line 102 b) and the pads (thefirst pad 104 a and thesecond pad 104 b) in the region M inFIG. 1 in accordance with some embodiments. It should be understood that the elements other than the metal line and the pad are omitted for clarity. - As shown in
FIG. 2B , a portion of the pad (thefirst pad 104 a or thesecond pad 104 b) overlaps the metal line (thefirst metal line 102 a or thesecond metal line 102 b) in accordance with some embodiments. Specifically, the pad may cover the sidewall and a portion of the top surface of the metal line. As shown inFIG. 2C andFIG. 2D , the entire pad is disposed on the metal line in accordance with some embodiments. Thesidewall 104 s of the pad may be aligned with thesidewall 102 s of the metal line in accordance with some embodiments (as shown inFIG. 2C ). The metal line may further extend toward the center of theelectronic device 200 and thesidewall 102 s of the metal line may protrude from thesidewall 104 s of the pad in accordance with some embodiments (as shown inFIG. 2D ). - On the other hand,
FIG. 2E andFIG. 2F illustrate the top views of the metal lines (thefirst metal line 102 a and thesecond metal line 102 b) and the pads (thefirst pad 104 a and thesecond pad 104 b) in the region M inFIG. 1 in accordance with some embodiments. In addition, the cross-sectional view along the line B-B′ inFIG. 2E may correspond to the cross-sectional views as shown inFIG. 2B andFIG. 2C . The cross-sectional view along the line B-B′ inFIG. 2F may correspond to the cross-sectional view as shown inFIG. 2D . Referring toFIGS. 2B, 2C and 2E , the pad may entirely overlap oneend 102 e of the metal line in accordance with some embodiments. Referring toFIG. 2D andFIG. 2F , the pad may partially overlap oneend 102 e of the metal line in accordance with some other embodiments. - Next, referring back to
FIG. 1 , thefirst pad 104 a and thesecond pad 104 b may respectively have a thickness T3 and a thickness T4 in the X direction of thefirst substrate 100. In some embodiments, the thickness T3 of thefirst pad 104 a may be in a range from about 0.2 μm to about 50 μm, or from about Sum to about 15 um. In some embodiments, the thickness T4 of thesecond pad 104 b may be in a range from about 0.2 μm to about 50 μm, or from about 5 um to about 15 um. The thickness T3 of thefirst pad 104 a may be the same as or different than the thickness T4 of thesecond pad 104 b. In some embodiments, the thickness T3 of thefirst pad 104 a is greater than the thickness T1 of thefirst metal line 102 a. In some embodiments, the thickness T4 of thesecond pad 104 b is greater than the thickness T2 of thesecond metal line 102 b. - In some embodiments, the
first pad 104 a and thesecond pad 104 b each may be formed of conductive materials. The conductive material for forming thefirst pad 104 a and thesecond pad 104 b may include, but is not limited to, solder materials, tin, indium, gallium, tin alloys, indium alloys, gallium alloys, gallium-indium alloys or a combination thereof. In some embodiments, thefirst pad 104 a and thesecond pad 104 b each may be formed of conductive materials having a relatively low melting temperature. In particular, thefirst pad 104 a and thesecond pad 104 b each may be formed of a conductive material having a relatively low melting temperature compared to the melting temperature of thefirst metal line 102 a and thesecond metal line 102 b. In some embodiments, thefirst pad 104 a and thesecond pad 104 b each may be formed of conductive materials having a temperature in a range from about 100° C. to about 400° C. - In some embodiments, the
first metal line 102 a, thesecond metal line 102 b, thefirst pad 104 a and thesecond pad 104 b may be formed by using chemical vapor deposition, physical vapor deposition, electroplating process, electroless plating process, any other suitable processes, or a combination thereof. The chemical vapor deposition may include, but is not limited to, low-pressure chemical vapor deposition (LPCVD), low-temperature chemical vapor deposition (LTCVD), rapid thermal chemical vapor deposition (RTCVD), plasma enhanced chemical vapor deposition (PECVD), or atomic layer deposition (ALD). The physical vapor deposition may include, but is not limited to, sputtering, evaporation, or pulsed laser deposition (PLD). - Still referring to
FIG. 1 , theelectronic device 200 includes asemiconductor die 202, afirst electrode 204 a, asecond electrode 204 b, a firstdielectric layer 206, aconductive layer 208, a first connectingpost 210 a, a second connectingpost 210 b, and asecond dielectric layer 212. Theelectronic device 200 may include an integrated circuit. For example, theelectronic device 200 may include, but is not limited to, a digital circuit, an LED, a photodiode, a transistor, or any other suitable electronic devices. Theelectronic device 200 may be a micro LED in accordance with some embodiments. It should be understood that although oneelectronic device 200 is illustrated inFIG. 1 , there may be more than oneelectronic device 200 disposed on thefirst substrate 100. - As shown in
FIG. 1 , theelectronic device 200 is disposed on thefirst pad 104 a and thesecond pad 104 b. The semiconductor die 202 of theelectronic device 200 may include multiple layers of different materials. In some embodiments, the semiconductor die 202 may include, but is not limited to, semiconductor layers, or quantum well layers. In some embodiments, the semiconductor layers may be formed of the III-V compounds. The III-V compounds may include, but is not limited to, gallium nitride (GaN), indium nitride (InN), aluminum nitride (AlN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), aluminum indium gallium nitride (AlGaInN) or a combination thereof. In some embodiments, the material of the quantum well layer may include, but is not limited to, indium gallium nitride, a gallium nitride or a combination thereof. - The semiconductor die 202 may be an organic micro LED die in accordance with some embodiments. The semiconductor die 202 may be an inorganic micro LED die in accordance with some embodiments. In some embodiments, the cross-sectional area of the semiconductor die 202 may have a length ranging from about 1 μm to about 175 μm in Y direction and may have a width ranging from about 1 μm to about 175 μm in Z direction. In some embodiments, the semiconductor die 202 may have a size ranging from about 1 μm×1 μm×1 μm to about 175 μm×175 μm×175 μm. In some embodiments, the semiconductor die 202 may be formed by using an epitaxial growth process. For example, metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), liquid phase epitaxy (LPE), or another suitable process may be used to form the semiconductor die 202.
- The
first electrode 204 a and thesecond electrode 204 b may be disposed over the semiconductor die 202. In some embodiments where theelectronic device 200 is a micro LED, thefirst electrode 204 a and thesecond electrode 204 b may serve as the n-electrode and p-electrode of the micro LED respectively. In some embodiments, thefirst electrode 204 a and thesecond electrode 204 b may be formed of metallic conductive materials. The metallic conductive material may include, but is not limited to, copper, aluminum, tungsten, titanium, gold, silver, molybdenum, platinum, nickel, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, molybdenum alloys, platinum alloys, nickel alloys, any other suitable conductive materials, or a combination thereof. In some embodiments, thefirst electrode 204 a and thesecond electrode 204 b may be formed of transparent conductive materials, for example, the transparent conductive material (TCO) may include, but is not limited to, indium tin oxide (ITO), tin oxide (SnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tin oxide (ITZO), antimony tin oxide (ATO), antimony zinc oxide (AZO), or a combination thereof. It should be noted that, thefirst electrode 204 a and thesecond electrode 204 b may be formed of a material having a relatively high melting temperature compared with theconductive layer 208 ofelectronic device 200. In some embodiments, thefirst electrode 204 a and thesecond electrode 204 b may be formed by using chemical vapor deposition, physical vapor deposition, electroplating process, electroless plating process, any other suitable processes, or a combination thereof. - Still referring to
FIG. 1 , thefirst dielectric layer 206 is disposed over the semiconductor die 202. In some embodiments, thefirst dielectric layer 206 may cover a portion of thefirst electrode 204 a and a portion of thesecond electrode 204 b. In other words, thefirst dielectric layer 206 may partially expose thefirst electrode 204 a and thesecond electrode 204 b so that thefirst electrode 204 a and thesecond electrode 204 b may be electrically connected to theconductive layer 208. In some embodiments, thefirst dielectric layer 206 may include, but is not limited to, silicon oxide, silicon nitride, silicon oxynitride, high-k dielectric material, any other suitable dielectric material, or a combination thereof. The high-k dielectric material may include, but is not limited to, metal oxide, metal nitride, metal silicide, transition metal oxide, transition metal nitride, transition metal silicide, metal oxynitride, metal aluminate, zirconium silicate, zirconium aluminate. In some embodiments, thefirst dielectric layer 206 may be formed by using chemical vapor deposition, spin coating, any other suitable processes, or a combination thereof. - In addition, the
electronic device 200 includes theconductive layer 208 disposed over thefirst dielectric layer 206. As described above, theconductive layer 208 is in contact with portions of thefirst electrode 204 a and thesecond electrode 204 b. Theconductive layer 208 is electrically connected to thefirst electrode 204 a and thesecond electrode 204 b separately. In addition, as shown inFIG. 1 , theconductive layer 208 includes a first connectingpost 210 a and a second connectingpost 210 b. The first connectingpost 210 a and the second connectingpost 210 b are each defined as the portion that is substantially below thebottom side 200 b of theelectronic device 200. The first connectingpost 210 a and the second connectingpost 210 b may protrude from thebottom surface 206 b of thefirst dielectric layer 206 in accordance with some embodiments. The first connectingpost 210 a and the second connectingpost 210 b may also protrude from thebottom surface 202 b of the semiconductor die 202 in accordance with some embodiments. In other words, the first connectingpost 210 a and the second connectingpost 210 b extend toward thefirst substrate 100. The first connectingpost 210 a and the second connectingpost 210 b extend toward thefirst pad 104 a and thesecond pad 104 b respectively. In addition, at least a portion of the first connectingpost 210 a is embedded in thefirst pad 104 a and at least a portion of the second connectingpost 210 b is embedded in thesecond pad 104 b. Thus, the first connectingpost 210 a is electrically connected to thefirst pad 104 a and the second connectingpost 210 b is electrically connected to thesecond pad 104 b. It should be understood that although two connecting posts are disposed in the embodiment shown inFIG. 1 , the amount of the connecting post may be adjusted according to the needs in some other embodiments. - As shown in
FIG. 1 , the first connectingpost 210 a and the second connectingpost 210 b are separated apart from each other by a distance D1. In some embodiments, the distance D1 between the first connectingpost 210 a and the second connectingpost 210 b is in a range from about 1 um to about 200 um, or from about 2 um to about 50 um. In some embodiments, the distance D1 between the first connectingpost 210 a and the second connectingpost 210 b is defined as the distance between any position within the first connectingpost 210 a and any position within the second connectingpost 210 b. In some other embodiments, the distance D1 between the first connectingpost 210 a and the second connectingpost 210 b is defined as the distance between the lowest point in the X direction of the first connectingpost 210 a and the lowest point in the X direction of the second connectingpost 210 b in a cross section. - Moreover, the first connecting
post 210 a and the second connectingpost 210 b may respectively have a height H1 and a height H2 in the X direction of thefirst substrate 100. In some embodiments, the height H1 of the first connectingpost 210 a may be in a range from about 0.05 μm to about 10 μm, or from about 1 um to about 5 um. In some embodiments, the height H2 of the second connectingpost 210 b may be in a range from about 0.05 μm to about 10 μm, or from about 1 um to about 5 um. - In some embodiments, the first connecting
post 210 a, the second connectingpost 210 b and theconductive layer 208 are integrally formed. The first connectingpost 210 a, the second connectingpost 210 b and theconductive layer 208 may be a continuous structure. In some other embodiments, the first connectingpost 210 a, the second connectingpost 210 b and theconductive layer 208 are separately formed. The first connectingpost 210 a, the second connectingpost 210 b and theconductive layer 208 may be independent elements. In addition, the first connectingpost 210 a and theconductive layer 208 may be formed of the same or different materials. Similarly, the second connectingpost 210 b and theconductive layer 208 may be formed of the same or different materials. - In some embodiments, the first connecting
post 210 a and the second connectingpost 210 b each may be formed of conductive materials. The conductive material for forming the first connectingpost 210 a and the second connectingpost 210 b may include, but is not limited to, copper, aluminum, tungsten, titanium, gold, silver, molybdenum, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, molybdenum alloys, any other suitable conductive materials, or a combination thereof. In some embodiments, the first connectingpost 210 a and the second connectingpost 210 b each may be formed of a conductive material having a relatively high melting temperature. In some embodiments, the first connectingpost 210 a and the second connectingpost 210 b each may be formed of a conductive material having a melting temperature in a range from about 660° C. to about 3410° C. - The
second dielectric layer 212 is formed over theconductive layer 208. Thesecond dielectric layer 212 also covers the first connectingpost 210 a and the second connectingpost 210 b. In some embodiments, thesecond dielectric layer 212 may include, but is not limited to, silicon oxide, silicon nitride, silicon oxynitride, high-k dielectric material, any other suitable dielectric material, or a combination thereof. The high-k dielectric material may include, but is not limited to, metal oxide, metal nitride, metal silicide, transition metal oxide, transition metal nitride, transition metal silicide, metal oxynitride, metal aluminate, zirconium silicate, zirconium aluminate. In some embodiments, thesecond dielectric layer 212 may be formed by using chemical vapor deposition, spin coating, any other suitable processes, or a combination thereof. - In addition, the
display device 10 also includes anadhesive layer 214 disposed between theelectronic device 200 and thefirst substrate 100. Theadhesive layer 214 adhere theelectronic device 200 and thefirst substrate 100 together and the first connectingpost 210 a and the second connectingpost 210 b are held in physical contact with thefirst pad 104 a and thesecond pad 104 b on thefirst substrate 100 respectively. Theadhesive layer 214 may be formed of adhesive materials. In some embodiments, theadhesive layer 214 may be an insulator. In some embodiments, the material of theadhesive layer 214 may include, but is not limited to, heat-curing adhesives, light-curing adhesives, or a combination thereof. The light-curing adhesives may include UV light-curing adhesives or visible light-curing adhesives. - In some embodiments, the
adhesive layer 214 may be formed by using coating, spray coating, inkjet printing, any other suitable methods, or a combination thereof, but is not limited thereto. As shown inFIG. 1 , theadhesive layer 214 may be formed in the shape of a drop in accordance with some embodiments. - It should be noted that, before the
electronic device 200 is affixed to thefirst substrate 100, thefirst substrate 100 and the elements formed thereon are heated in accordance with some embodiments. Specifically, thefirst pad 104 a and thesecond pad 104 b are heated to be in a melted state so that the first connectingpost 210 a and the second connectingpost 210 b can be embedded into thefirst pad 104 a and thesecond pad 104 b respectively. In some embodiments, the melting temperature of the connecting posts (the first connectingpost 210 a and the second connectingpost 210 b) is higher than the melting temperature of the pads (thefirst pad 104 a and thesecond pad 104 b). In such cases, the temperature of the heating process may be adjusted within a range where the pads are substantially melted and the connecting posts are not melted. In some other embodiments, the hardness of the connecting posts is higher than the hardness of the pads so that the connecting posts can be embedded into the pads. - In addition, since the metal lines (the
first metal line 102 a and thesecond metal line 102 b) disposed on thefirst substrate 100 will also be heated during the heating process, the melting temperature of the metal lines is higher than the melting temperature of the pads (thefirst pad 104 a and thesecond pad 104 b) in accordance with some embodiments. Specifically, the ratio of the melting temperature of the metal lines to the melting temperature of the pads is in a range from about 1.5 to about 35, or from about 1.5 to about 17 in accordance with some embodiments. It should be noted that the ratio of the melting temperature of the metal lines to the melting temperature of the pads should not be too small, or the metal lines may also be melted or deformed during the heating process and may cause the risk of broken metal lines. The ratio of the melting temperature of the metal lines to the melting temperature of the pads should not be too great, or the difference between the coefficient of expansion of the metal lines and the coefficient of expansion of the pads may be too great so that the metal lines and the pads may be peeled off. - As described above, the pads (the
first pad 104 a and thesecond pad 104 b) may be formed of a conductive material having a relatively low melting temperature compared to the material of themetal lines 102 a/102 b. The conductive material having a relatively low melting temperature for forming the pad may include, but is not limited to, solder materials, tin, indium, gallium, tin alloys, indium alloys, gallium alloys, or gallium-indium alloys. The connecting posts (the first connectingpost 210 a and the second connectingpost 210 b) may be formed of a conductive material having a relatively high melting temperature compared to the material of the pads. The conductive material having a relatively high melting temperature for forming the connecting posts may include, but is not limited to, copper, aluminum, tungsten, titanium, gold, silver, molybdenum, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, or molybdenum alloys. In addition, the metal lines may also be formed of a conductive material having a relatively high melting temperature compared to the material of the pads. The conductive material having a relatively high melting temperature for forming the metal lines may include, but is not limited to, copper, aluminum, tungsten, titanium, gold, silver, molybdenum, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, or molybdenum alloys. - The melting temperatures of the materials described above are listed below.
-
Materials Melting temperature(° C.) solder 400 Sn 232.06 In 156.76 In— Ga alloy 100 Ga 29.76 Mo 2623 Au 1,064.58 Cu 1,084.6 Ti 1,660 W 3,407 Ag 961 Al 660.25 - Next, referring to
FIG. 3 ,FIG. 3 illustrates a cross-sectional view of thedisplay device 20 in accordance with some embodiments of the present disclosure. It should be noted that the same or similar elements or layers in above and below contexts are represented by the same or similar reference numerals. The materials, manufacturing methods and functions of these elements or layers are the same or similar to those described above, and thus will not be repeated herein. The difference between thedisplay device 20 inFIG. 3 and thedisplay device 10 inFIG. 1 is that the first connectingpost 210 a and the second connectingpost 210 b have a different profile. As shown inFIG. 3 , thedisplay device 20 may have the bell-shaped first connectingpost 210 a and bell-shaped second connectingpost 210 b. In these embodiments, the first connectingpost 210 a and the second connectingpost 210 b include a blunt end. In one embodiment, the second connectingportions 210 a/210 b having blunt ends can further reduce the accumulation of static-electricity than the connectingportions 210 a/210 b having sharp ends, and can increase the efficiency of electrical connection between the connectingportions 210 a/210 b andpads 104 a/104 b. This is because that the connectingportions 210 a/210 b having sharp ends may generate a corona discharge to damage thepads 104 a/104 b, and the surfaces of thepads 104 a/104 b may be oxidized. In such cases, the efficiency of the electrical connection between the connectingportions 210 a/210 b and thepads 104 a/104 b may be reduced. In fact, the connecting posts 201 a/201 b may have any other suitable shapes as long as the connecting posts protrude from thebottom side 200 b of theelectronic device 200 and can be embedded in the pads. For example, the first connectingpost 210 a and the second connectingpost 210 b may have tapered shapes, triangular shapes, rectangular shapes, but they are not limited thereto. - Next, referring to
FIG. 4 ,FIG. 4 illustrates a cross-sectional view of thedisplay device 30 in accordance with some embodiments of the present disclosure. The difference between thedisplay device 30 inFIG. 4 and thedisplay device 10 inFIG. 1 is that the materials of the first connectingpost 210 a and the second connectingpost 210 b are different than that of theconductive layer 208 in the embodiment shown inFIG. 4 . The connectingposts 210 a/210 b and theconductive layer 208 may be formed separately in accordance with some embodiments. As described above, the connecting posts (the first connectingpost 210 a and the second connectingpost 210 b) may be formed of a conductive material having a relatively high melting temperature compared to the material of thepads 104 a/104 b. In addition, the connectingposts 210 a/210 b may be formed of a conductive material having a relatively low melting temperature compared to the material of theconductive layer 208 so that theconductive layer 208 may be unaffected by the high temperature during the heating process. Accordingly, the functions such as the conductivity of theconductive layer 208 may be unaffected and the performance of the electronic device may be maintained. - Next, referring to
FIG. 5 ,FIG. 5 illustrates a cross-sectional view of thedisplay device 40 in accordance with some embodiments of the present disclosure. The difference between thedisplay device 40 inFIG. 5 and thedisplay device 30 inFIG. 4 is that the first connectingpost 210 a and the second connectingpost 210 b include multilayer structures in the embodiment shown inFIG. 5 . As shown inFIG. 5 , the first connectingpost 210 a includes afirst layer 210 a′ and asecond layer 210 a″, and the second connectingpost 210 b includes afirst layer 210 b′ and asecond layer 210 b″. Specifically, thefirst layer 210 a′ of the first connectingpost 210 a and thefirst layer 210 b′ of the second connectingpost 210 b may be formed of the same material as that of theconductive layer 208 in accordance with some embodiments. In other words, thefirst layer 210 a′ and thefirst layer 210 b′ may be formed of a conductive material having a relatively high melting temperature. In some embodiments, thesecond layer 210 a″ of the first connectingpost 210 a and thesecond layer 210 b″ of the second connectingpost 210 b may be formed of a conductive material having a relatively low melting temperature compared to the material of thefirst layer 210 a′ and thefirst layer 210 b′ respectively. In addition, thesecond layer 210 a″ and thesecond layer 210 b″ is formed of a conductive material having a relatively high melting temperature compared to the material of thepads 104 a/104 b. - Next, referring to
FIG. 6 ,FIG. 6 illustrates a cross-sectional view of thedisplay device 50 in accordance with some embodiments of the present disclosure. The difference between thedisplay device 50 inFIG. 6 and thedisplay device 10 inFIG. 1 is that theadhesive layer 214 is filled in the space between theelectronic device 200 and thefirst substrate 100 in the embodiment shown inFIG. 6 . Specifically, theadhesive layer 214 is substantially filled in the space defined by the semiconductor die 202, thefirst dielectric layer 206, the connectingposts 210 a/210 b, thepads 104 a/104 b and thefirst substrate 100. In this embodiment, theadhesive layer 214 is in physical contact with thefirst pad 104 a and thesecond pad 104 b. In some embodiments, theadhesive layer 214 is also in physical contact with the first connectingpost 210 a and the second connectingpost 210 b. - Next, referring to
FIG. 7 ,FIG. 7 illustrates a cross-sectional view of thedisplay device 60 in accordance with some embodiments of the present disclosure. The difference between thedisplay device 60 inFIG. 7 and thedisplay device 50 inFIG. 6 is that theadhesive layer 214 further extends over thepads 104 a/104 b located outside the connectingposts 210 a/210 b in the embodiment shown inFIG. 7 . As shown inFIG. 7 , theadhesive layer 214 substantially covers the entirefirst pad 104 a and thesecond pad 104 b. In some embodiments, the edge of theadhesive layer 214 may be substantially aligned with the edge of thepads 104 a/104 b. - Next, referring to
FIGS. 8A-8E ,FIGS. 8A-8E illustrate the cross-sectional views of the region M inFIG. 1 in accordance with some embodiments. It should be understood that some of the elements are omitted for clarity. As described above, at least a portion of the connecting posts (the first connectingpost 210 a and the second connectingpost 210 b) are embedded in the pads (thefirst pad 104 a and thesecond pad 104 b). Therefore, a portion of the pad will be extruded and a bulging portion is formed around the position where the connecting post embeds the pad. As shown inFIG. 8A , the pad (thefirst pad 104 a or thesecond pad 104 b) includes a bulgingportion 104 p around the portion of the connecting post (the first connectingpost 210 a or the second connectingpost 210 b) that is embedded in the pad in accordance with some embodiments. As shown inFIG. 8B , in some embodiments where theadhesive layer 214 is filled in the space between theelectronic device 200 and the first substrate 100 (as shown inFIG. 6 ), the pad includes a bulgingportion 104 p, and theadhesive layer 214 also includes a swellingportion 214 p around the portion of the connecting post that is embedded in the pad. As shown inFIG. 8C , in some embodiments where theadhesive layer 214 is filled in the space between theelectronic device 200 and the first substrate 100 (as shown inFIG. 6 ), theadhesive layer 214 includes a swellingportion 214 p around the connecting post while the pad does not extrude. In addition, as shown inFIG. 8D , in some other embodiments where theadhesive layer 214 substantially covers the entire pad (as shown inFIG. 7 ), the pad includes a bulgingportion 104 p, and theadhesive layer 214 also includes a swellingportion 214 p around the portion of the connecting post that is embedded in the pad. As shown inFIG. 8E , in some other embodiments where theadhesive layer 214 substantially covers the entire pad (as shown inFIG. 7 ), theadhesive layer 214 includes a swellingportion 214 p around the connecting post while the pad is not extruded. - In some embodiments, the bulging
portion 104 p of the pad has a height H3 (as shown inFIG. 8A ). The height H3 may be defined as the distance between the highest point of the bulgingportion 104 p and the lowest point of the bulgingportion 104 p in the X direction offirst substrate 100. In some embodiments, the height H3 of the bulgingportion 104 p may be in a range from about 0.1 μm to about 5 μm, or from about 1 um to about 3 um. In some embodiments where the pad and theadhesive layer 214 include the bulgingportion 104 p and the swellingportion 214 p respectively, the bulgingportion 104 p and the swellingportion 214 p have a total height H3′ (as shown inFIG. 8D ). The total height H3′ may be defined as the distance between the highest point of the swellingportion 214 p and the lowest point of the bulgingportion 104 p in the X direction offirst substrate 100. In some embodiments, the height H3′ of the bulgingportion 104 p and the swellingportion 214 p may be in a range from about 0.1 μm to about 5 μm, or from about 1 um to about 3 um. Moreover, in some embodiments where theadhesive layer 214 includes the swellingportion 214 p, the swellingportion 214 p of theadhesive layer 214 has a height H3″ (as shown inFIG. 8E ). The height H3″ may be defined as the distance between the highest point of the swellingportion 214 p and the lowest point of the swellingportion 214 p in the X direction offirst substrate 100. In some embodiments, the height H3″ of the swellingportion 214 p may be in a range from about 0.1 μm to about 5 μm, or from about 1 um to about 3 um. - In some embodiments, the portion of the connecting
post 210 a/210 b that is embedded in thepad 104 a/104 b has a height H4 (as shown inFIG. 8A ). In some embodiments, the portion of the connectingpost 210 a/210 b that is embedded in thepad 104 a/104 b and theadhesive layer 214 has a height H4 (as shown inFIG. 8D ). In some embodiments, the portion of the connectingpost 210 a/210 b that is embedded in theadhesive layer 214 has a height H4 (as shown inFIG. 8E ). As described above, the first connectingpost 210 a and the second connectingpost 210 b may respectively have a height H1 and a height H2 in the X direction of thefirst substrate 100. In some embodiments, the ratio of the height H4 of the portion of the connectingpost 210 a/210 b that is embedded in thepad 104 a/104 b and/or theadhesive layer 214 to the height H1 of the first connectingpost 210 a is in a range from 0.1 to 1 (i.e. 0.1 H4/H1≤1). In some embodiments, the ratio of the height H4 of the portion of the connectingpost 210 a/210 b that is embedded in thepad 104 a/104 b and/or theadhesive layer 214 to the height H2 of the second connectingpost 210 b is in a range from 0.1 to 1 (i.e. 0.1≤H4/H2≤1). - Next, referring to
FIG. 9 ,FIG. 9 illustrates a cross-sectional view of thedisplay device 70 in accordance with some embodiments of the present disclosure. The difference between thedisplay device 70 inFIG. 9 and thedisplay device 10 inFIG. 1 is that theelectronic device 200 is arranged in flip chip type in the embodiment shown inFIG. 9 . In this embodiment, theconductive layer 208 may directly serve as the connecting posts to embed in thepads 104 a/104 b. Theelectronic device 200 may be electrically connected to thepads 104 a/104 b by the portion of theconductive layer 208 that is embedded in the pad. - Next, referring to
FIG. 10 ,FIG. 10 illustrates a cross-sectional view of thedisplay device 80 in accordance with some embodiments of the present disclosure. Thedisplay device 80 includes an integratedelectronic component 200A and asecond substrate 300 disposed below the integratedelectronic component 200A. The integratedelectronic component 200A is substantially the same as thedisplay device 10 described inFIG. 1 . Specifically, the integratedelectronic component 200A includes thefirst substrate 100, thefirst metal line 102 a and thesecond metal line 102 b disposed on thefirst substrate 100, and thefirst pad 104 a and thesecond pad 104 b disposed on thefirst substrate 100. Thefirst pad 104 a and thesecond pad 104 b are electrically connected to thefirst metal line 102 a and thesecond metal line 102 b respectively. The integratedelectronic component 200A also includes theelectronic device 200 disposed on thefirst pad 104 a and thesecond pad 104 b. Theelectronic device 200 includes the first connectingpost 210 a and the second connectingpost 210 b, and a portion of the first connectingpost 210 a is embedded in thefirst pad 104 a and a portion of the second connectingpost 210 b is embedded in thesecond pad 104 b. The materials, manufacturing methods and functions of these elements are the same or similar to those described above, and thus are not repeated herein. - In some embodiments, the
second substrate 300 may serve as a destination substrate (such as an array substrate) of thedisplay device 80. Thefirst substrate 100 serves as an intermediate substrate to carry the elements formed thereon to the destination substrate (e.g., the second substrate 300). In some embodiments, a plurality ofelectronic devices 200 are disposed on thefirst substrate 100. As described above, theelectronic device 200 may include, but is not limited to, a digital circuit, an LED, a photodiode, a transistor, or any other suitable electronic devices. Theelectronic device 200 may be a micro LED in accordance with some embodiments. In some embodiments, theelectronic device 200 further includes at least oneintegrated circuit 400 disposed on thefirst substrate 100. In some other embodiments, theelectronic device 200 includes a circuit having multiple integrated circuits, other electronic elements or other optoelectronic elements and conductive wires interconnecting the multiple electronic elements to form a circuit on thefirst substrate 100. Thefirst substrate 100 may carry the integratedelectronic component 200A where multiple elements are formed and disposed on thesecond substrate 300, and thus may reduce the times that are required for the transfer. - In some embodiments, the material of the
second substrate 300 may include, but is not limited to, glass, quartz, sapphire, polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), rubbers, glass fibers, other polymer materials, any other suitable substrate material, or a combination thereof. In some embodiments, thesecond substrate 300 may be formed of a metal-glass fiber composite plate, a metal-ceramic composite plate, a printed circuit board, or any other suitable material, but it is not limited thereto. The material of thesecond substrate 300 may be the same as or different than the material of thefirst substrate 100. - In addition, the
display device 80 also includes athird metal line 302 a and afourth metal line 302 b disposed on thesecond substrate 300. Thethird metal line 302 a and thefourth metal line 302 b may be any conductive element on thesecond substrate 300. For example, thethird metal line 302 a and thefourth metal line 302 b each may be the conductive elements of the circuit on the array substrate. In some embodiments, thethird metal line 302 a and thefourth metal line 302 b may be the data line or scan line on the array substrate. Thethird metal line 302 a and thefourth metal line 302 b may respectively have a thickness T5 and a thickness T6 in the X direction of thefirst substrate 100. In some embodiments, the thickness T5 of thethird metal line 302 a may be in a range from about 0.1 um to about 1 um, or from about 0.2 um to about 0.6 um. In some embodiments, the thickness T6 of thefourth metal line 302 b may be in a range from about 0.1 um to about 1 um, or from about 0.2 um to about 0.6 um. The thickness T5 of thethird metal line 302 a may be the same with or different from the thickness T6 of thefourth metal line 302 b. - In some embodiments, the
third metal line 302 a and thefourth metal line 302 b each may be formed of conductive materials. The conductive material for forming thethird metal line 302 a and thefourth metal line 302 b may include, but is not limited to, copper, aluminum, tungsten, titanium, gold, silver, molybdenum, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, molybdenum alloys, any other suitable conductive materials, or a combination thereof. In some embodiments, thethird metal line 302 a and thefourth metal line 302 b each may be formed of a conductive material having a relatively high melting temperature. In some embodiments, thethird metal line 302 a and thefourth metal line 302 b each may be formed of a conductive material having a melting temperature in a range from about 660° C. to about 3410° C. In addition, in some embodiments, thethird metal line 302 a and/or thefourth metal line 302 b may include multilayer structures. - As shown in
FIG. 10 , thedisplay device 80 also includes athird pad 304 a and afourth pad 304 b disposed on thesecond substrate 300. Thethird pad 304 a and thefourth pad 304 b are electrically connected to thethird metal line 302 a and thefourth metal line 302 b respectively. Thethird pad 304 a provides the electrical connection between the integratedelectronic component 200A and thethird metal line 302 a on thesecond substrate 300. Thefourth metal line 302 b provides the electrical connection between the integratedelectronic component 200A and thefourth metal line 302 b on thesecond substrate 300. As shown inFIG. 10 , thethird pad 304 a and thefourth pad 304 b at least partially overlaps thethird metal line 302 a and thefourth metal line 302 b respectively, so that the electrical connection between thepads 304 a/304 b and themetal lines 302 a/302 b may be well maintained. In particular, the overlap between the pads and the metal lines may assist in the transmission of the electrical signals in the metal lines or reduce the possibility of leakage of electricity. - In some embodiments, the
third pad 304 a and thefourth pad 304 b may respectively have a thickness T7 and a thickness T8 in the X direction of thefirst substrate 100. In some embodiments, the thickness T7 of thethird pad 304 a may be in a range from about 0.2 um to about 50 um, or from about Sum to about 15 um. In some embodiments, the thickness T8 of thefourth pad 304 b may be in a range from about 0.2 um to about 50 um, or from about Sum to about 15 um. The thickness T7 of thethird pad 304 a may be the same as or different than the thickness T8 of thefourth pad 304 b. In some embodiments, the thickness T7 of thethird pad 304 a is greater than the thickness T5 of thethird metal line 302 a. In some embodiments, the thickness T8 of thefourth pad 304 b is greater than the thickness T6 of thefourth metal line 302 b. Furthermore, since thethird pad 304 a needs to transfer more current compared to thefirst pad 104 a, an area (or a size) of thethird pad 304 a is greater than an area (or a size) of thefirst pad 104 a in accordance with some embodiments. Similarly, since thefourth pad 304 b needs to transfer more current compared to thesecond pad 104 b, an area (or a size) of thefourth pad 304 b is greater than an area (or a size) of thesecond pad 104 b in accordance with some embodiments. - In some embodiments, the
third pad 304 a and thefourth pad 304 b each may be formed of conductive materials. The conductive material for forming thethird pad 304 a and thefourth pad 304 b may include, but is not limited to, solder materials, tin, indium, gallium, tin alloys, indium alloys, gallium alloys, gallium-indium alloys or a combination thereof. In some embodiments, thethird pad 304 a and thefourth pad 304 b each may be formed of conductive materials having a relatively low melting temperature. In particular, thethird pad 304 a and thefourth pad 304 b each may be formed of a conductive material having a relatively low melting temperature compared to the melting temperature of thethird metal line 302 a and thefourth metal line 302 b. In some embodiments, thethird pad 304 a and thefourth pad 304 b each may be formed of conductive materials having a temperature in a range from about 100° C. to about 400° C. - On the other hand, it should be noted that the
first metal line 102 a of the integratedelectronic component 200A further includes a third connectingpost 310 a and thesecond metal line 102 b of the integratedelectronic component 200A further includes a fourth connectingpost 310 b. The third connectingpost 310 a and the fourth connectingpost 310 b are electrically connected to thefirst metal line 102 a and thesecond metal line 102 b respectively. As shown inFIG. 10 , thefirst metal line 102 a and thesecond metal line 102 b extend from thefirst substrate 100 toward thesecond substrate 300 to provide the electrical connection between the integratedelectronic component 200A and thesecond substrate 300. The third connectingpost 310 a and the fourth connectingpost 310 b extend toward thefirst substrate 100. The third connectingpost 310 a and the fourth connectingpost 310 b extend toward thethird pad 304 a and thefourth pad 304 b respectively. The third connectingpost 310 a and the fourth connectingpost 310 b are in contact with thethird pad 304 a and thefourth pad 304 b respectively. In some embodiments, at least a portion of the third connectingpost 310 a is embedded in thethird pad 304 a and at least a portion of the fourth connectingpost 310 b is embedded in thefourth pad 304 b. Thus, the third connectingpost 310 a is electrically connected to thethird pad 304 a and the fourth connectingpost 310 b is electrically connected to the fourth pad 104 d. - In some embodiments, the connecting posts (the third connecting
post 310 a and the fourth connectingpost 310 b) and the metal lines (thefirst metal line 102 a and thesecond metal line 102 b) are integrally formed. The connecting posts and the metal lines may be a continuous structure. In some other embodiments, the connecting posts and the metal lines are separately formed. The connecting posts and the metal lines may be independent elements. In addition, the connecting posts (the third connectingpost 310 a and the fourth connectingpost 310 b) and the metal lines (thefirst metal line 102 a and thesecond metal line 102 b) may be formed of the same or different materials. The third connectingpost 310 a and the fourth connectingpost 310 b may be formed of the same or different materials. - In some embodiments, the third connecting
post 310 a and the fourth connectingpost 310 b each may be formed of conductive materials. The conductive material for forming the third connectingpost 310 a and the fourth connectingpost 310 b may include, but is not limited to, copper, aluminum, tungsten, titanium, gold, silver, molybdenum, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, molybdenum alloys, any other suitable conductive materials, or a combination thereof. In some embodiments, the third connectingpost 310 a and the fourth connectingpost 310 b each may be formed of a conductive material having a relatively high melting temperature. In some embodiments, the third connectingpost 310 a and the fourth connectingpost 310 b each may be formed of a conductive material having a melting temperature in a range from about 660° C. to about 3410° C. In some embodiments, the third connectingpost 310 a and the fourth connectingpost 310 b each may be formed of a conductive material having a relatively high melting temperature compared to the material of thethird pad 304 a and thefourth pad 304 b. In some embodiments, thefirst metal line 102 a and thesecond metal line 102 b each may be formed of a conductive material having a relatively high melting temperature compared to the material of thethird pad 304 a and thefourth pad 304 b. - Furthermore, as described above, the first connecting
post 210 a and the second connectingpost 210 b are separated apart from each other by a distance D1. In some embodiments, the distance D1 between the first connectingpost 210 a and the second connectingpost 210 b is in a range from about 1 um to about 200 um, or from about 2 um to about 50 um. As shown inFIG. 10 , the third connectingpost 310 a and the fourth connectingpost 310 b are separated apart from each other by a distance D2. In some embodiments, the distance D2 between the third connectingpost 310 a and the fourth connectingpost 310 b is in a range from about 3 um to about 600 um, or from about 6 um to about 150 um. In some embodiments, the distance D2 between the third connectingpost 310 a and the fourth connectingpost 310 b is greater than the distance D1 between the first connectingpost 210 a and the second connectingpost 210 b. Moreover, in some embodiments, the width D4 in Y direction of the third connectingpost 310 a may be greater than the width D3 in Y direction of the first connectingpost 210 a. In some embodiments, the size of the fourth connectingpost 310 b may be greater than the size of the second connectingpost 210 b. - In addition, the melting temperature of the connecting posts (the third connecting
post 310 a and the fourth connectingpost 310 b) is higher than the melting temperature of the pads (thethird pad 304 a and thefourth pad 304 b) in accordance with some embodiments. In some embodiments, the melting temperature of the metal lines (thefirst metal line 102 a, thesecond metal line 102 b, thethird metal line 302 a and thefourth metal line 302 b) is higher than the melting temperature of the pads (thefirst pad 104 a and thesecond pad 104 b). Specifically, the ratio of the melting temperature of the metal lines to the melting temperature of the pads is in a range from about 1.5 to about 35, or from about 1.5 to about 17 in accordance with some embodiments. It should be noted that the ratio of the melting temperature of the metal lines to the melting temperature of the pads should not be too small, or the metal lines may also be melted or deformed during the heating process and may cause the risk of broken metal lines. The ratio of the melting temperature of the metal lines to the melting temperature of the pads should not be too great, or the difference between the coefficient of expansion of the metal lines and the coefficient of expansion of the pads may be too great so that the metal lines and the pads may be peeled off. - As described above, the pads (the
third pad 304 a and thefourth pad 304 b) may be formed of a conductive material having a relatively low melting temperature compared to the material of the metal lines. The conductive material having a relatively low melting temperature for forming the pad may include, but is not limited to, solder materials, tin, indium, gallium, tin alloys, indium alloys, gallium alloys, or gallium-indium alloys. The connecting posts (the third connectingpost 310 a and the fourth connectingpost 310 b) may be formed of a conductive material having a relatively high melting temperature compared to the material of the pads. The conductive material having a relatively high melting temperature for forming the connecting posts may include, but is not limited to, copper, aluminum, tungsten, titanium, gold, silver, molybdenum, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, or molybdenum alloys. In addition, the metal lines (thethird metal line 302 a and thefourth metal line 302 b) may also be formed of a conductive material having a relatively high melting temperature compared to the material of the pads. The conductive material having a relatively high melting temperature for forming the metal lines may include, but is not limited to, copper, aluminum, tungsten, titanium, gold, silver, molybdenum, copper alloys, aluminum alloys, tungsten alloys, titanium alloys, gold alloys, silver alloys, or molybdenum alloys. - The
display device 80 also includes anadhesive layer 314 disposed between thefirst substrate 100 and thesecond substrate 300. Theadhesive layer 314 adhere thefirst substrate 100 and thesecond substrate 300 together and the third connectingpost 310 a and the fourth connectingpost 310 b are held in physical contact with thethird pad 304 a and thefourth pad 304 b on thesecond substrate 300 respectively. Theadhesive layer 314 may be formed of adhesive materials. In some embodiments, theadhesive layer 314 may be an insulator. In some embodiments, the material of theadhesive layer 314 may include, but is not limited to, heat-curing adhesives, light-curing adhesives, or a combination thereof. The light-curing adhesives may include UV light-curing adhesives or visible light-curing adhesives. The material of theadhesive layer 314 may be the same as or different than the material of theadhesive layer 214. - Next, referring to
FIGS. 11A-11C ,FIGS. 11A-11C illustrate the diagrams showing the transfer process of the electronic devices to the destination substrate in accordance with some embodiments of the present disclosure. As shown inFIG. 11A , thefirst substrate 100 may include multipleelectronic devices 200 formed thereon. It should be understood that although only theelectronic devices 200 are illustrated inFIG. 11A , thefirst substrate 100 may actually include various elements formed thereon (as shown in theFIG. 10 ). In this embodiment, thefirst substrate 100 serves as an intermediate substrate to gather the various elements such as theelectronic devices 200 first and then transfer these elements to the second substrate 300 (e.g. a destination substrate). In some embodiments, theelectronic devices 200 may be the micro LEDs emitting red light, green light, blue light, or a combination thereof. - In some other embodiments, more than one intermediate substrate may be transferred to the
second substrate 300 and the intermediate substrates may carry different electronic devices. For example, as shown inFIGS. 11A-11C , thefirst substrate electronic devices electronic devices second substrate 300 first. Thesecond substrate 300 encompassing the integrated electronic component then may be transferred to another destination substrate. In some embodiments, theelectronic devices - To summarize the above, the present disclosure provides a structure for improving the efficiency of the electrical connection between relatively small electronic devices such as micro LEDs or integrated electronic components and a relatively large destination substrate such as an array substrate. The display device provided in the present disclosure includes the connecting posts that can be securely embedded in the conductive elements of the destination substrate, such as the pads for the interconnection. The electronic devices can therefore maintain effective electrical connection to the circuit system on the destination substrate. In addition, the configuration of the intermediate substrate in the display device may reduce the times that are required for the transfer of the small electronic devices to the destination substrate in accordance with some embodiments of the present disclosure.
- Although some embodiments of the present disclosure and their advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure as defined by the appended claims. For example, it will be readily understood by one of ordinary skill in the art that many of the features, functions, processes, and materials described herein may be varied while remaining within the scope of the present disclosure. Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the present disclosure, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present disclosure. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps.
Claims (20)
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US20190386193A1 (en) | 2019-12-19 |
CN115332286A (en) | 2022-11-11 |
KR102608656B1 (en) | 2023-11-30 |
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CN110299376A (en) | 2019-10-01 |
EP3542948A1 (en) | 2019-09-25 |
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US11114597B2 (en) | 2021-09-07 |
US10446729B1 (en) | 2019-10-15 |
KR20190111703A (en) | 2019-10-02 |
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