US20190230792A1

US20190230792A1 - Substrate and electronic device

Info

Publication number: US20190230792A1
Application number: US16/242,040
Authority: US
Inventors: Shinichi NAKAMOTO
Original assignee: Fujitsu Ltd
Current assignee: Fujitsu Ltd
Priority date: 2018-01-25
Filing date: 2019-01-08
Publication date: 2019-07-25
Anticipated expiration: 2039-01-08
Also published as: JP2019129261A; US10362676B1; JP6984441B2

Abstract

Provided is a substrate including a first wiring layer coupled to another wiring layer through a plurality of vias, wherein in the first wiring layer, an area of a first region except an aperture is greater than an area of a second region except an aperture, the first region being enclosed by a first line segment passing through a first connection part of a first via and being parallel to a first short side of the first wiring layer and a second line segment passing through a second connection part of a second via and being parallel to the first short side, the second region being enclosed by the second line segment and a third line segment passing through a third connection part of a third via and being parallel to the first short side, the first, second, and third connection parts connecting to the first wiring layer.

Description

CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority of the prior Japanese Patent Application No. 2018-010914 filed on Jan. 25, 2018, the entire contents of which are incorporated herein by reference.

FIELD

A certain aspect of the embodiments is related to a substrate and an electronic device.

BACKGROUND

When a plurality of vias are coupled to a wiring layer provided to a substrate, current may crowd into a particular via. Thus, a method for inhibiting current from crowding into a particular via is suggested. One example is a method that inhibits current from crowding into the vias at both ends by making the electrical resistance of the wiring layer in the regions between the vias at both ends and the vias next to the vias at both ends greater than the electrical resistance in other regions as disclosed in, for example, Japanese Patent Application Publication No. 2010-62530. In addition, a method that averages the currents flowing through a plurality of vias by configuring the central points of the vias to be included in a region within a predetermined distance from the center point of the power supply pad has been known, as disclosed in, for example, Japanese Patent Application Publication No. 2015-146382.
Furthermore, a method that reduces the variation in power-supply voltage in a circuit substrate by arranging a Large Scale Integration (LSI) having the largest power consumption near the power source and configuring a power supply pattern from the power source to the LSI to be the widest as disclosed in, for example, Japanese Patent Application Publication No. 2002-374048.

SUMMARY

According to a first aspect of the embodiments, there is provided a substrate including a first wiring layer coupled to another wiring layer through a plurality of vias, wherein the first wiring layer has a structure in which an area of a first region, which is enclosed by a first line segment and a second line segment, except an aperture located in the first region is greater than an area of a second region, which is enclosed by the second line segment and a third line segment, except an aperture located in the second region, the first line segment passing through a first connection part of a first via of the plurality of vias and being parallel to a first short side of the first wiring layer, the second line segment passing through a second connection part of a second via of the plurality of vias and being parallel to the first short side, the third line segment passing through a third connection part of a third via of the plurality of vias and being parallel to the first short side, the first connection part, the second connection part, and the third connection part being connected to the first wiring layer.
According to a second aspect of the embodiments, there is provided an electronic device including a substrate having a first wiring layer coupled to another wiring layer through a plurality of vias, wherein the first wiring layer has a structure in which an area of a first region, which is enclosed by a first line segment and a second line segment, except an aperture located in the first region is greater than an area of a second region, which is enclosed by the second line segment and a third line segment, except an aperture located in the second region, the first line segment passing through a first connection part of a first via of the plurality of vias and being parallel to a first short side of the first wiring layer, the second line segment passing through a second connection part of a second via of the plurality of vias and being parallel to the first short side, the third line segment passing through a third connection part of a third via of the plurality of vias and being parallel to the first short side, the first connection part, the second connection part, and the third connection part being connected to the first wiring layer.
The object and advantages of the invention will be realized and attained by means of the elements and combinations particularly pointed out in the claims.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are not restrictive of the invention, as claimed.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1A is a cross-sectional view of a substrate in accordance with a first embodiment, and FIG. 1B and FIG. 1C are plan views of wiring layers;

FIG. 2A is a cross-sectional view of a substrate in accordance with a first comparative example, and FIG. 2B and FIG. 2C are plan views of wiring layers;

FIG. 3A is a diagram for describing the current flowing through vias of the substrate in accordance with the first comparative example, and FIG. 3B is a diagram for describing electrical resistance in the substrate in accordance with the first comparative example;

FIG. 4A through FIG. 4C are circuit diagrams for describing a reason why current crowds into the vias at both ends among vias of the substrate of the first comparative example;

FIG. 5A is a diagram for describing the current flowing through vias of the substrate of the first embodiment, and FIG. 5B is a diagram for describing electrical resistance in the substrate of the first embodiment;

FIG. 6A and FIG. 6B are circuit diagrams for describing a reason why current evenly flows to vias of the substrate of the first embodiment;

FIG. 7A and FIG. 7B are plan views illustrating other examples of the wiring layer;

FIG. 8A and FIG. 8B are plan views illustrating other examples of the wiring layer; and

FIG. 9A is a cross-sectional view of an electronic device in accordance with a second embodiment, and FIG. 9B and FIG. 9C are plan views of wiring layers.

DESCRIPTION OF EMBODIMENTS

The method that makes the electrical resistance of the wiring layer in the regions between the vias at both ends and the vias next to the vias at both ends greater than the electrical resistances in other regions can inhibit current from crowding into the vias at both ends, but the current crowds into the vias next to the vias at both ends, and it is difficult to evenly flow current to the vias.
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings.

First Embodiment

FIG. 1A is a cross-sectional view of a substrate 100 in accordance with a first embodiment, FIG. 1B is a plan view of a wiring layer 11, and FIG. 1C is a plan view of a wiring layer 12. As illustrated in FIG. 1A, the substrate 100 of the first embodiment is a printed circuit board having a multilayered structure in which a plurality of wiring layers are stacked through an insulating film, and includes an insulating film 10, the wiring layers 11 and 12, and vias 13 a through 13 e, 14, and 15. The insulating film 10 is formed of a resin material such as epoxy or polyimide or a ceramic material such as aluminum oxide. The wiring layers 11 and 12 and the vias 13 a through 13 e, 14, and 15 are formed of a metal such as, for example, gold or copper.
A first end part of the wiring layer 11 is electrically connected through the via 14 to a power supply unit 33 located on the substrate 100. The power supply unit 33 is, for example, a DC-DC converter, but may be other than DC-DC converter. A first end part of the wiring layer 12 is electrically connected through the via 15 to an electronic component 34 located on the substrate 100. The electronic component 34 is, for example, a semiconductor component such as a Large Scale Integration (LSI), but may be other than the semiconductor component.
A second end part of the wiring layer 11 and a second end part of the wiring layer 12 overlap with each other across the insulating film 10 in the stacking direction of the wiring layers 11 and 12. That is, the part within a predetermined distance from an end 16 of the second end part of the wiring layer 11 and the part within a predetermined distance from an end 17 of the second end part of the wiring layer 12 overlap with each other across the insulating film 10 in the stacking direction of the wiring layers 11 and 12 to form an overlap region 18. The wiring layers 11 and 12 extend from the overlap region 18 in the opposite directions.
The vias 13 a through 13 e penetrate through the insulating film 10 in the overlap region 18 to connect the wiring layer 11 and the wiring layer 12. The vias 13 a through 13 e are arranged in a straight line from the end 16 of the wiring layer 11 along the wiring direction of the wiring layer 11 and are arranged in a straight line from the end 17 of the wiring layer 12 along the wiring direction of the wiring layer 12. Since the wiring layer 11 is coupled to the power supply unit 33, current flows from the wiring layer 11 to the wiring layer 12 through the vias 13 a through 13 e, and is then supplied to the electronic component 34 connected to the wiring layer 12. Among the vias 13 a through 13 e, the via 13 a is located most upstream in the flow direction of current, and the vias 13 b, 13 c, 13 d, and 13 e are located in this order from the upstream to the downstream side.
As illustrated in FIG. 1B, the parts connecting to the wiring layer 11 of the vias 13 a through 13 e are respectively defined as connection parts 21 a through 21 e. Here, the direction parallel to a short side 19 of the wiring layer 11 is defined as a first direction, and the direction parallel to a long side 20 is defined as a second direction. In the wiring layer 11, the line segment that passes through the connection part 21 a and is parallel to the first direction is defined as a line segment 22 a. In the same manner, the line segment that passes through the connection part 21 b and is parallel to the first direction is defined as a line segment 22 b, and the line segment that passes through the connection part 21 c and is parallel to the first direction is defined as the line segment 22 c. The line segment that passes through the connection part 21 d and is parallel to the first direction is defined as a line segment 22 d, and the line segment that passes through the connection part 21 e and is parallel to the first direction is defined as a line segment 22 e. The line segments 22 a through 22 e are indicated by chain lines in FIG. 1B. The line segments 22 a through 22 e preferably pass through the centers of the connection parts 21 a through 21 e, respectively, but may pass through parts other than the centers.
In the wiring layer 11, the region enclosed by the opposed long sides 20, the line segment 22 a, and the line segment 22 b is defined as a region 23 a. In the same manner, the region enclosed by the opposed long sides 20, the line segment 22 b, and the line segment 22 c is defined as a region 23 b, the region enclosed by the opposed long sides 20, the line segment 22 c, and the line segment 22 d is defined as a region 23 c, and the region enclosed by the opposed long sides 20, the line segment 22 d, and the line segment 22 e is defined as a region 23 d.
The regions 23 a through 23 d have apertures 24 that are holes penetrating through the wiring layer 11. The diameters of the apertures 24 in the regions 23 a through 23 d are approximately the same. The term “approximately the same” includes a difference to the extent of the manufacturing errors (the same applies hereinafter). For the number of the apertures 24 in the regions 23 a through 23 d, the number of the apertures 24 is the smallest in the region 23 a, and increases in the order of the regions 23 b, 23 c, and 23 d. That is, the number of the apertures 24 is the smallest in the region 23 a located upstream in the flow direction of current, and increases in the order of the regions 23 b, 23 c, and 23 d, i.e., as the region is located further downstream in the flow direction of current. In the regions 23 a through 23 d, the apertures 24 are arranged in a straight line in the first direction.
In the wiring layer 11, the line segment passing through the aperture 24 in the region 23 a and being parallel to the first direction is defined as a line segment 25 a. In the same manner, the line segment passing through the apertures 24 in the region 23 b and being parallel to the first direction is defined as a line segment 25 b, the line segment passing through the apertures 24 in the region 23 c and being parallel to the first direction is defined as a line segment 25 c, and the line segment passing through the apertures 24 in the region 23 d and being parallel to the first direction is defined as a line segment 25 d. The line segments 25 a through 25 d are indicated by dashed lines in FIG. 1B. For the lengths of the parts of the line segments 25 a through 25 d except the apertures 24, the line segment 25 a is the longest, followed by the line segments 25 b, 25 c, and 25 d.
Thus, for the areas of the regions 23 a through 23 d except the apertures 24, the region 23 a is the largest, followed by the regions 23 b, 23 c, and 23 d. Thus, among the regions 23 a through 23 d, the electrical resistance of the region 23 a is the smallest, and the electrical resistance increases in the order of the regions 23 b, 23 c, and 23 d. That is, the electrical resistances of the regions 23 a through 23 d gradually increase from the region 23 a located upstream in the flow direction of current to the region 23 d located downstream.
As illustrated in FIG. 1C, the parts connecting to the wiring layer 12 of the vias 13 a through 13 e are respectively defined as connection parts 28 a through 28 e. Here, the direction parallel to a short side 26 of the wiring layer 12 is defined as a third direction, and the direction parallel to a long side 27 is defined as a fourth direction. In the wiring layer 12, the line segment that passes through the connection part 28 a and is parallel to the third direction is defined as a line segment 29 a. In the same manner, the line segment that passes through the connection part 28 b and is parallel to the third direction is defined as a line segment 29 b, and the line segment that passes through the connection part 28 c and is parallel to the third direction is defined as a line segment 29 c. The line segment that passes through the connection part 28 d and is parallel to the third direction is defined as a line segment 29 d, and the line segment that passes through the connection part 28 e and is parallel to the third direction is defined as a line segment 29 e. The line segments 29 a through 29 e are indicated by chain lines in FIG. 1C. The line segments 29 a through 29 e preferably pass through the centers of the connection parts 28 a through 28 e, but may pass through the parts other than the center.
In the wiring layer 12, the region enclosed by the opposed long sides 27, the line segment 29 a, and the line segment 29 b is defined as a region 30 a. In the same manner, the region enclosed by the opposed long sides 27, the line segment 29 b, and the line segment 29 c is defined as a region 30 b, the region enclosed by the opposed long sides 27, the line segment 29 c, and the line segment 29 d is defined as a region 30 c, and the region enclosed by the opposed long sides 27, the line segment 29 d, and the line segment 29 e is defined as a region 30 d.
The regions 30 a through 30 d have apertures 31 that are holes penetrating through the wiring layer 12. The diameters of the apertures 31 in the regions 30 a through 30 d are approximately the same. For the number of the apertures 31 in the regions 30 a through 30 d, the number of the apertures 31 is the largest in the region 30 a, and decreases in the order of the regions 30 b, 30 c, and 30 d. That is, the number of the apertures 31 in the region 30 a located upstream in the flow direction of current is the largest, and the number of the apertures 31 decreases in the order of the regions 30 b, 30 c, and 30 d, i.e., as the region is located further downstream in the flow direction of current. In the regions 30 a through 30 d, the apertures 31 are arranged in a straight line in the third direction.
In the wiring layer 12, the line segment passing through the apertures 31 in the region 30 a and being parallel to the third direction is defined as a line segment 32 a. In the same manner, the line segment passing through the apertures 31 in the region 30 b and being parallel to the third direction is defined as a line segment 32 b, the line segment passing through the apertures 31 in the region 30 c and being parallel to the third direction is defined as a line segment 32 c, and the line segment passing through the aperture 31 in the region 30 d and being parallel to the third direction is defined as a line segment 32 d. The line segments 32 a through 32 d are indicated by dashed lines in FIG. 1C. For the lengths of the parts except the apertures 31 of the line segments 32 a through 32 d, the line segment 32 a is the shortest, followed by the line segments 32 b, 32 c, and 32 d.
Thus, for the areas of the regions 30 a through 30 d except the apertures 31, the region 30 a is the smallest, followed by the regions 30 b, 30 c, and 30 d. Thus, among the regions 30 a through 30 d, the region 30 a has the largest electrical resistance, and the electrical resistance decreases in the order of the regions 30 b, 30 c, and 30 d. That is, the electrical resistances of the regions 30 a through 30 d gradually decrease from the region 30 a, which is located upstream in the flow direction of current, and to the region 30 d, which is located downstream.
Here, to describe the advantage of the substrate of the first embodiment, a substrate of a first comparative example will be described. FIG. 2A is a cross-sectional view of a substrate 500 in accordance with the first comparative example, FIG. 2B is a plan view of the wiring layer 11, and FIG. 2C is a plan view of the wiring layer 12. As illustrated in FIG. 2A through FIG. 2C, in the substrate 500 of the first comparative example, no aperture 24 is provided in the wiring layer 11, and no aperture 31 is provided in the wiring layer 12. Other structures are the same as those of the first embodiment, and the description thereof is thus omitted.
FIG. 3A is a diagram for describing the current flowing through the vias 13 a through 13 e of the substrate 500 in accordance with the first comparative example, and FIG. 3B is a diagram for describing the electrical resistance in the substrate 500 of the first comparative example. As illustrated in FIG. 3A, in the substrate 500 of the first comparative example, current crowds into the vias 13 a and 13 e at both ends among the vias 13 a through 13 e. In other words, current crowds into the via 13 a, which is located most upstream in the flow direction of the current flowing through the wiring layer 11, and the via 13 e, which is located most downstream among the vias 13 a through 13 e. The reason is considered as follows.
That is, as illustrated in FIG. 2A, when the wiring layer 12 is coupled through the vias 13 a through 13 e to the wiring layer 11 through which current supplied from the power supply unit 33 flows, the wiring layer 12 is added as a pathway through which current flows. To flow the current through the wiring layer 12, the current crowds into the via 13 a located most upstream in the flow direction of the current flowing through the wiring layer 11. In the via 13 e located most downstream, the wiring layer 11 ends, and the pathway through which current flows is thus reduced. Therefore, the current crowds into the via 13 e. From another perspective, the via 13 a is a changing point at which the pathway of the current changes from one pathway, which is the wiring layer 11, to two pathways, which are the wiring layers 11 and 12 connected in parallel. The via 13 e is a changing point at which the pathway of the current changes from two pathways, which are the wiring layers 11 and 12 connected in parallel, to one pathway, which is the wiring layer 12. At such changing points, the electrical resistance of the current pathway greatly changes as illustrated in FIG. 3B. Thus, the current crowds into the vias 13 a and 13 e. When the current crowds into the vias 13 a and 13 e, the current densities of the vias 13 a and 13 e increase, and thereby a break due to electromigration may be caused.
FIG. 4A through FIG. 4C are circuit diagrams for describing a reason why current crowds into the vias 13 a and 13 e at both ends in the substrate 500 of the first comparative example. In FIG. 4A through FIG. 4C, for the sake of shorthand, it is assumed that the wiring layer 11 and the wiring layer 12 are coupled by three vias 13 a, 13 c, and 13 e. As illustrated in FIG. 4A, it is assumed that the electrical resistance of the wiring layer 11 is R₁, the electrical resistance of the wiring layer 12 is R₂, and the electrical resistance of each of the vias 13 a, 13 c, and 13 e is R_V. It is assumed that the current I flowing through the wiring layer 11 diverges into the current I₁and the current I₂at the connection point of the via 13 a. The current flowing through the via 13 c is represented by I₅. As illustrated in FIG. 4B, when the electrical resistance R₁of the wiring layer 11 and the electrical resistance R_Vof the via 13 e are combined, and the electrical resistance R₂of the wiring layer 12 and the electrical resistance R_Vof the via 13 a are combined, a bridge circuit is formed. When the part located on the left side of the dashed line in FIG. 4B is rewritten, the circuit diagram becomes as illustrated in FIG. 4C.
In this case, the current I₁and the current I₂are expressed by
$\begin{matrix} I_{1} = \frac{R_{1} + \frac{(R_{v} + R_{1}) R_{v}}{(R_{1} + R_{2} + 2 R_{v})}}{(R_{1} + R_{2} + R_{v}) + \frac{(R_{1} + R_{2} + R_{v}) R_{v}}{(R_{1} + R_{2} + 2 R_{v})}} I, & (1) \\ I_{2} = \frac{R_{2} + R_{v} + \frac{R_{2} R_{v}}{(R_{1} + R_{2} + 2 R_{v})}}{(R_{1} + R_{2} + R_{v}) + \frac{(R_{1} + R_{2} + R_{v}) R_{v}}{(R_{1} + R_{2} + 2 R_{v})}} I . & (2) \end{matrix}$
The voltages V₁and V₂at both ends of the via 13 c are expressed by
V ₁=(R ₂ +R _v)I ₁, (3)
V ₂ =R ₁ I ₂. (4)
Therefore, the current I₅flowing through the via 13 c is expressed by
$\begin{matrix} I_{5} = (V_{1} - V_{2}) / R_{v} = \frac{1}{\frac{R_{1} + R_{2}}{R_{v}} + 3} I . & (5) \end{matrix}$
Here, since a plurality of vias are connected in parallel, the electrical resistances R_Vof the vias 13 a, 13 c, and 13 e are assumed to be sufficiently small compared to the electrical resistances R₁and R₂of the wiring layers 11 and 12. In this case, the currents I₁, I₂, and I₅are expressed by
$\begin{matrix} I_{1} = \frac{R_{1}}{R_{1} + R_{2}} I, & (6) \\ I_{2} = \frac{R_{2}}{R_{1} + R_{2}} I, & (7) \\ I_{5} = \frac{1}{\frac{R_{1} + R_{2}}{R_{v}} + 3} I ≅ \frac{R_{v}}{R} I  I . & (8) \end{matrix}$
As expressed by the expressions (6) through (8), the currents I₁and I₂are determined by the ratio between the electrical resistance R₁and the electrical resistance R₂, while the current I₅is determined by the ratio between the electrical resistance R_Vand the electrical resistances R₁and R₂. As described above, since the electrical resistance R_Vis sufficiently small compared to the resistances R₁and R₂, the current I₅flowing through the via 13 c is less than the current I₁flowing through the via 13 a. The same applies to the via 13 e, and the current I₅flowing through the via 13 c is less than the current flowing through the via 13 e. Thus, current crowds into the via 13 a, which is located most upstream in the flow direction of the current flowing through the wiring layer 11, and the via 13 e, which is located most downstream.
Even when the wiring layer is thickened, the diameters of the vias other than the vias at both ends among the vias connecting between the wiring layers are increased, or the number of vias connecting between the wiring layers is increased, it is difficult to inhibit the current from crowding into the vias at both ends.
FIG. 5A is a diagram for describing the current flowing through the vias 13 a through 13 e of the substrate 100 of the first embodiment, and FIG. 5B is a diagram for describing the electrical resistance in the substrate 100 of the first embodiment. As illustrated in FIG. 5A, in the substrate 100 of the first embodiment, the current evenly flows through the vias 13 a through 13 e, and the current is inhibited from crowding into the vias 13 a and 13 e at both ends. The reason is considered as follows.
That is, as illustrated in FIG. 1B, in the wiring layer 11, among the regions 23 a through 23 d, the area of the region excluding the apertures 24 is the largest in the region 23 a, and decreases in the order of the regions 23 b, 23 c, and 23 d, i.e., as the region is located further downstream in the flow direction of current. Thus, the electrical resistance of the region 23 a located upstream in the flow direction of current is the smallest, and the electrical resistance increases in the order of the regions 23 b, 23 c, and 23 d, i.e., as the region is located further downstream in the flow direction of current. Since the electrical resistance of the region 23 a is less than the electrical resistances of the regions 23 b through 23 d located further downstream than the region 23 a, the current flowing through the wiring layer 11 flows more easily to the wiring layer 11 than to the via 13 a in the vicinity of the connection part 21 a connecting to the wiring layer 11 of the via 13 a. Thus, the current flowing through the via 13 a reduces, and the current flowing through the vias 13 b through 13 d is increased. Since the electrical resistance increases in the order of the regions 23 b, 23 c, and 23 d, it gradually becomes difficult for the current to flow to the wiring layer 11, and the current flowing into the vias 13 b through 13 d gradually increases. Since the electrical resistance of the region 23 d is high, it is difficult for the current to flow through the wiring layer 11 in the vicinity of the connection part 21 d connecting to the wiring layer 11 of the via 13 d, and the current flowing into the via 13 e thus reduces. For the above described reasons, it is considered that the current is inhibited from crowding into the vias 13 a and 13 e, and the current evenly flows into the vias 13 a through 13 e.
As illustrated in FIG. 1C, in the wiring layer 12, among the regions 30 a through 30 d, the area of the region excluding the apertures 31 is the smallest in the region 30 a, which is located upstream in the flow direction of current, and increases in the order of the regions 30 b, 30 c, and 30 d, i.e., as the region is located further downstream in the flow direction of current. Therefore, the electrical resistance of the region 30 a located upstream in the flow direction of current is the largest, and the electrical resistance decreases in the order of the regions 30 b, 30 c, and 30 d, i.e., as the region is located further downstream in the flow direction of current. It is considered that the current is unlikely to flow into the via 13 a because of the high electrical resistance of the region 30 a. Since the electrical resistance decreases in the order of the regions 30 b, 30 c, and 30 d, the current flowing through the vias 13 b through 13 d gradually increases. Therefore, the current effectively evenly flows through the vias 13 a through 13 e by sequentially decreasing the electrical resistances of the regions 30 a through 30 d in addition to sequentially increasing the electrical resistances of the regions 23 a through 23 d of the wiring layer 11.
As illustrated in FIG. 5B, it is considered that when the electrical resistance of the wiring layer 11 gradually increases and the electrical resistance of the wiring layer 12 gradually decreases from the upstream to the downstream side in the flow direction of current, the rapid change in the resistance of the current pathway is inhibited. This is also considered as a reason why the current is inhibited from crowding into the vias 13 a and 13 e and the current evenly flows through the vias 13 a through 13 e.
FIG. 6A and FIG. 6B are circuit diagrams for describing a reason why the current evenly flows through the vias of the substrate 100 of the first embodiment. In FIG. 6A and FIG. 6B, for the sake of shorthand, it is assumed that the wiring layer 11 and the wiring layer 12 are connected by three vias 13 a, 13 c, and 13 e. As illustrated in FIG. 6A, since the electrical resistance of the wiring layer 11 increases from the upstream side to the downstream side in the flow direction of current, it is assumed that the electrical resistance of the upstream part of the wiring layer 11 is R₁, and the electrical resistance of the downstream part of the wiring layer 11 is R₁′ greater than R₁. Since the electrical resistance of the wiring layer 12 decreases from the upstream side to the downstream side in the flow direction of current, it is assumed that the electrical resistance of the downstream part of the wiring layer 12 is R₂, and the electrical resistance of the upstream part of the wiring layer 12 is R₂′ greater than R₂. The electrical resistance of each of the vias 13 a, 13 c, and 13 e is represented by R_V. When the current is assumed to evenly flow through the vias 13 a, 13 c, and 13 e, the current flowing through each of the vias 13 a, 13 c, and 13 e is represented by I₁. Since the resistance of the upstream part of the wiring layer 11 is small and it is thus easy for the current to flow through the upstream part of the wiring layer 11, it is assumed that the current I flowing through the wiring layer 11 diverges into the current I₁and the current 2I₁at the connection point of the via 13 a. In the same manner, since the resistance of the downstream part of the wiring layer 12 is small and it is thus easy for the current to flow through the downstream part of the wiring layer 12, it is assumed that the current flowing through the downstream part of the wiring layer 12 is 2I₁. As illustrated in FIG. 6B, when the electrical resistance R₁′ of the wiring layer 11 and the electrical resistance R_yof the via 13 e are combined, and the electrical resistance R₂′ of the wiring layer 12 and the electrical resistance R_Vof the via 13 a are combined, a bridge circuit is formed.
In this case, the voltages V₃and V₄at both ends of the via 13 c are expressed by
V ₃ =I ₁(R ₂ ′+R _v), (9)
V ₄=2I ₁ R ₁. (10)
The voltage V₅of the wiring layer 12 at a point posterior to the via 13 e is expressed by
V ₅ =I ₁(R ₂ ′+R _v)+2I ₁ R ₂=2I ₁ R ₁ +I ₁(R ₁ ′+R _v). (11)
The following expressions (12) and (13) are obtained from the expressions (9) through (11).
R ₁′=2R ₂ (12)
R ₂′=2R ₁ (13)
From the expressions (12) and (13), it is considered that when the resistance R₁′ of the downstream part of the wiring layer 11 and the resistance R₂′ of the upstream part of the wiring layer 12 increase, the current is inhibited from crowding into the vias 13 a and 13 e, and the current evenly flows through the vias 13 a, 13 c, and 13 e.
In the first embodiment, in the wiring layer 11, the area of the region 23 a except the aperture 24 is greater than the area of the region 23 b except the apertures 24 as illustrated in FIG. 1B. In addition, in the wiring layer 11, the area of the region 23 b except the apertures 24 is greater than the area of the region 23 c except the apertures 24. Furthermore, in the wiring layer 11, the area of the region 23 c except the apertures 24 is greater than the area of the region 23 d except the apertures 24. Thus, the electrical resistance of the wiring layer 11 gradually increases from the upstream side to the downstream side in the flow direction of current, and the current is inhibited from crowding into the vias 13 a and 13 e at both ends among the vias 13 a through 13 e as described in FIG. 5A. Thus, the current is made to evenly flow through the vias 13 a through 13 e.
As illustrated in FIG. 1C, in the wiring layer 12, the area of the region 30 a except the apertures 31 is less than area of the region 30 b except the apertures 31. In addition, in the wiring layer 12, the area of the region 30 b except the apertures 31 is less than the area of the region 30 c except the apertures 31. Furthermore, in the wiring layer 12, the area of the region 30 c except the apertures 31 is less than the area of the region 30 d except the aperture 31. Thus, since the electrical resistance of the wiring layer 12 gradually decreases from the upstream side to the downstream side in the flow direction of current, as described in FIG. 5A, the current is made to effectively evenly flow through the vias 13 a through 13 e thanks to the synergy with the advantage obtained by gradually increasing the electrical resistance of the wiring layer 11 from the upstream side to the downstream side in the flow direction of current.
As illustrated in FIG. 1B, the number of the apertures 24 in each of the regions 23 a through 23 d increases in the order of the regions 23 a, 23 b, 23 c, and 23 d. Thus, even when the thickness of the wiring layer 12 is made to be the same, the electrical resistance can be made to increase in the order of the regions 23 a, 23 b, 23 c, and 23 d. The first embodiment has described, as an example, a case where the area of each of the regions 23 a, 23 b, 23 c, and 23 d except the apertures 24 decreases in the order of the regions 23 a, 23 b, 23 c, and 23 d as the number of the apertures 24 in each of the regions 23 a through 23 d increases in the order of the regions 23 a, 23 b, 23 c, and 23 d, but does not intend to suggest any limitation. FIG. 7A and FIG. 7B are plan views illustrating other examples of the wiring layer. As illustrated in FIG. 7A, one aperture 24 a, which is a hole, may be provided in each of the regions 23 a through 23 d, and the area of the aperture 24 a may increase in the order of the regions 23 a, 23 b, 23 c, and 23 d. As illustrated in FIG. 7B, an aperture 24 b may be a cutout located at the long side 20 of the wiring layer 11, and the area of the aperture 24 b may increase in the order of the regions 23 a, 23 b, 23 c, and 23 d. When the sum of the areas of the apertures in each of the regions 23 a through 23 d increases in the order of the regions 23 a, 23 b, 23 c, and 23 d, the electrical resistance can be made to increase in the order of the regions 23 a, 23 b, 23 c, and 23 d while the thickness of the wiring layer 11 is made to be the same.
In the same manner, as illustrated in FIG. 1C, the number of the apertures 31 in each of the regions 30 a through 30 d decreases in the order of the regions 30 a, 30 b, 30 c, and 30 d. This configuration decreases the electrical resistance in the order of the regions 30 a, 30 b, 30 c, and 30 d while making the thickness of the wiring layer 12 the same. The first embodiment has described, as an example a case where the area of each of the regions 30 a through 30 d except the apertures 31 increases in the order of the regions 30 a, 30 b, 30 c, and 30 d as the number of the apertures 31 in each of the regions 30 a through 30 d decreases in the order of the regions 30 a, 30 b, 30 c, and 30 d. FIG. 8A and FIG. 8B are plan views illustrating other examples of the wiring layer. As illustrated in FIG. 8A, one aperture 31 a, which is a hole, may be provided in each of the regions 30 a through 30 d, and the area of the aperture 31 a may decrease in the order of the regions 30 a, 30 b, 30 c, and 30 d. As illustrated in FIG. 8B, an aperture 31 b may be a cutout located at the long side 27 of the wiring layer 12, and the area of the aperture 31 b may decrease in the order of the regions 30 a, 30 b, 30 c, and 30 d. As the sum of the areas of the apertures in each of the regions 30 a through 30 d decrease in the order of the regions 30 a, 30 b, 30 c, and 30 d, the electrical resistance can be made to decrease in the order of the regions 30 a, 30 b, 30 c, and 30 d while the thickness of the wiring layer 12 is made to be the same.
The first embodiment has described, as an example, a case where the apertures 24 through 24 b provided in the wiring layer 11 penetrate through the wiring layer 11, but the apertures 24 through 24 b may not necessarily penetrate through the wiring layer 11 and may have a bottom of the wiring layer 11. However, to easily adjust the electrical resistances in the regions 23 a through 23 d, the apertures 24 through 24 b preferably penetrate through the wiring layer 11. In the same manner, a case where the apertures 31 through 31 b provided in the wiring layer 12 penetrate through the wiring layer 12 has been described as an example, but the apertures 31 through 31 b may not necessarily penetrate through the wiring layer 12 and may have a bottom of the wiring layer 12. However, to easily adjust the electrical resistances in the regions 30 a through 30 d, the apertures 31 through 31 b preferably penetrate through the wiring layer 12.
The first embodiment has described, as an example, a case where the apertures 24 and 31 are circular holes as illustrated in FIG. 1B and FIG. 1C, but the apertures 24 and 31 may be rectangular holes or elliptical holes. The apertures 24 a and 31 a are not limited to rectangular holes illustrated in FIG. 7A and FIG. 8A, but may be elliptical holes. The apertures 24 b and 31 b are not limited to rectangular cutouts illustrated in FIG. 7B and FIG. 8B, and may be elliptical cutouts.
The first embodiment has described, as an example, a case where the wiring layers 11 and 12 are power supply layers to which a power-supply voltage is supplied from the power supply unit 33 and through which the current flows, but does not intend to suggest any limitation. The wiring layers 11 and 12 may be ground layers to which a ground potential is given from the electronic component 34 and through which the current flows toward a ground. However, when the wiring layers 11 and 12 are power supply layers, large current flows through the wiring layers 11 and 12. Thus, when the current crowds into the vias 13 a and 13 e at both ends among the vias 13 a through 13 e, a break is likely to occur. Therefore, when the wiring layers 11 and 12 are power supply layers, the aperture 24 is preferably provided in the wiring layer 11.

Second Embodiment

FIG. 9A is a cross-sectional view of an electronic device 200 in accordance with a second embodiment, FIG. 9B is a plan view of a wiring layer 41 of a substrate 210, and FIG. 9C is a plan view of a wiring layer 72 of a substrate 220. As illustrated in FIG. 9A, in the electronic device 200 of the second embodiment, the substrate 220 is mounted on the substrate 210 by connection members 95 a through 95 e. The connection members 95 a through 95 e are, for example, bumps such as solder. The substrate 210 is a printed circuit board in which a wiring layer is formed in an insulating film, and includes an insulating film 40, the wiring layer 41, and vias 43 a through 43 e and 44. The wiring layer 41 and the vias 43 a through 43 e and 44 are located in the insulating film 40. The first end part of the wiring layer 41 is electrically connected through the via 44 to the power supply unit 33 located on the substrate 210. The insulating film 40 is formed of, for example, a resin material such as epoxy or polyimide or a ceramic material such as aluminum oxide. The wiring layer 41 and the vias 43 a through 43 e and 44 are formed of metal such as, for example, gold or copper.
The substrate 220 is a printed circuit board in which a wiring layer is formed in an insulating film, and includes an insulating film 70, the wiring layer 72, and vias 73 a through 73 e and 75. The wiring layer 72 and the vias 73 a through 73 e and 75 are provided in the insulating film 70. A first end part of the wiring layer 72 is electrically connected through the via 75 to the electronic component 34 located on the substrate 220. The insulating film 70 is formed of, for example, a resin material such as epoxy or polyimide or a ceramic material such as aluminum oxide. The wiring layer 72 and the vias 73 a through 73 e and 75 are formed of metal such as, for example, gold or copper. The substrate 220 is not limited to a printed circuit board, and may be a semiconductor substrate in which a semiconductor element such as, for example, a transistor is formed.
In the part within a predetermined distance from an end 46 of a second end part of the wiring layer 41, vias 43 a through 43 e are arranged in a straight line in the wiring direction of the wiring layer 41 and connected to the wiring layer 41. In the same manner, in the part within a predetermined distance from an end 77 of a second end part of the wiring layer 72, vias 73 a through 73 e are arranged in a straight line in the wiring direction of the wiring layer 72 and connected to the wiring layer 72. The vias 43 a through 43 e and the vias 73 a through 73 e are respectively interconnected through respective connection members 95 a through 95 e. This structure mounts the substrate 220 on the substrate 210. That is, the part within a predetermined distance from the end 46 of the wiring layer 41 and the part within a predetermined distance from the end 77 of the wiring layer 72 overlap with each other in the direction in which the substrate 220 is mounted on the substrate 210 to form an overlap region 96. The wiring layers 41 and 72 extend from the overlap region 96 in opposite directions. The connection members 95 a through 95 e are located in the overlap region 96, and are arranged in a straight line in the wiring direction of the wiring layers 41 and 72. Since the wiring layer 41 is coupled to the power supply unit 33, the current flows from the wiring layer 41 to the wiring layer 72 through the vias 43 a through 43 e, the connection members 95 a through 95 e, and the vias 73 a through 73 e, and is then supplied to the electronic component 34 coupled to the wiring layer 72.
As illustrated in FIG. 9B, the parts connecting to the wiring layer 41 of the vias 43 a through 43 e are respectively defined as connection parts 51 a through 51. Here, the direction parallel to a short side 49 of the wiring layer 41 is defined as a first direction, and the direction parallel to a long side 50 is defined as a second direction. In the wiring layer 41, the line segment that passes through the connection part 51 a and is parallel to the first direction is defined as a line segment 52 a. In the same manner, the line segment that passes through the connection part 51 b and is parallel to the first direction is defined as a line segment 52 b, and the line segment that passes through the connection parts 51 c and is parallel to the first direction is defined as a line segment 52 c. The line segment that passes through the connection part 51 d and is parallel to the first direction is defined as a line segment 52 d, and the line segment that passes through the connection part 51 e and is parallel to the first direction is defined as a line segment 52 e. The line segments 52 a through 52 e are indicated by chain lines in FIG. 9B. The line segments 52 a through 52 e preferably pass through the respective centers of the connection parts 51 a through 51 e, but may pass through the part other than the center.
In the wiring layer 41, the region enclosed by the opposed long sides 50, the line segment 52 a, and the line segment 52 b is defined as a region 53 a. In the same manner, the region enclosed by the opposed long sides 50, the line segment 52 b, and the line segment 52 c is defined as a region 53 b, the region enclosed by the opposed long sides 50, the line segment 52 c, and the line segment 52 d is defined as a region 53 c, and the region enclosed by the opposed long sides 50, the line segment 52 d, and the line segment 52 e is defined as a region 53 d.
Apertures 54, which are holes penetrating through the wiring layer 41, are provided in the regions 53 a through 53 d. The diameters of the apertures 54 in the regions 53 a through 53 d are approximately the same. The number of the apertures 54 in each of the regions 53 a through 53 d increases in the order of the regions 53 a, 53 b, 53 c, and 53 d. That is, the number of the apertures 54 is the smallest in the region 53 a located upstream in the flow direction of current, and increases in the order of the regions 53 b, 53 c, and 53 d, i.e., as the region is located further downstream in the flow direction of current. Thus, for the areas of the regions 53 a through 53 d except the apertures 54, the region 53 a is the largest, followed by the regions 53 b, 53 c, and 53 d. Thus, among the regions 53 a through 53 d, the region 53 a has the smallest electrical resistance, followed by the regions 53 b, 53 c, and 53 d.
As illustrated in FIG. 9C, the parts connecting to the wiring layer 72 of the vias 73 a through 73 e are defined as connection parts 88 a through 88 e, respectively. Here, the direction parallel to a short side 86 of the wiring layer 72 is defined as a third direction, and the direction parallel to a long side 87 is defined as a fourth direction. In the wiring layer 72, the line segment that passes through the connection part 88 a and is parallel to the third direction is defined as a line segment 89 a. In the same manner, the line segment that passes through the connection part 88 b and is parallel to the third direction is defined as a line segment 89 b, and the line segment that passes through the connection part 88 c and is parallel to the third direction is defined as a line segment 89 c. The line segment that passes through the connection part 88 d and is parallel to the third direction is defined as a line segment 89 d, and the line segment that passes through the connection parts 88 e and is parallel to the third direction is defined as a line segment 89 e. The line segments 89 a through 89 e are indicated by chain lines in FIG. 9C. The line segments 89 a through 89 e preferably pass through the centers of the connection parts 88 a through 88 e, respectively, but may pass through the parts other than the centers.
In the wiring layer 72, the region enclosed by the opposed long sides 87, the line segment 89 a, and the line segment 89 b is defined as a region 90 a. In the same manner, the region enclosed by the opposed long sides 87, the line segment 89 b, and the line segment 89 c is defined as a region 90 b, the region enclosed by the opposed long sides 87, the line segment 89 c, and the line segment 89 d is defined as a region 90 c, and the region enclosed by the opposed long sides 87, the line segment 89 d, and the line segment 89 e is defined as a region 90 d.
Apertures 91, which are holes penetrating through the wiring layer 72, are provided in the regions 90 a through 90 d. The diameters of the apertures 91 in the regions 90 a through 90 d are approximately the same. For the numbers of the apertures 91 in the regions 90 a through 90 d, the number of the apertures 91 is the largest in the region 90 a, followed by the regions 90 b, 90 c, and 90 d. That is, the number of the apertures 91 is the largest in the region 90 a located upstream in the flow direction of current, and decreases in the order of the regions 90 b, 90 c, and 90 d, i.e., as the region is located further downstream in the flow direction of current. Thus, for the areas of the regions 90 a through 90 d except the apertures 91, the region 90 a is the smallest, followed by the regions 90 b, 90 c, and 90 d. Thus, among the regions 90 a through 90 d, the electrical resistance of the region 90 a is the largest, and the electrical resistance decreases in the order of the regions 90 b, 90 c, and 90 d.
A case where the apertures 54 and 91 are circular holes has been described as an example, but the apertures 54 and 91 may be rectangular holes or elliptical holes. The wiring layer 41 may have a structure in which one aperture is provided in each of the regions 53 a through 53 d as in FIG. 7A and the area of the aperture increases in the order of the regions 53 a, 53 b, 53 c, and 53 d. As in FIG. 7B, the aperture may be a cutout. The wiring layer 72 may have a structure in which one aperture is provided in each of the regions 90 a through 90 d as in FIG. 8A and the area of the aperture decreases in the order of the regions 90 a, 90 b, 90 c, and 90 d. As in FIG. 8B, the aperture may be a cutout.
In the second embodiment, as illustrated in FIG. 9B, in the wiring layer 41, the area of the region 53 a except the aperture 54 is greater than the area of the region 53 b except the apertures 54. In addition, in the wiring layer 41, the area of the region 53 b except the apertures 54 is greater than the area of the region 53 c except the apertures 54. Furthermore, in the wiring layer 41, the area of the region 53 c except the apertures 54 is greater than the area of the region 53 d except the apertures 54. Accordingly, the electrical resistance of the wiring layer 41 gradually increases from the upstream to the downstream side in the flow direction of current. Thus, as in the first embodiment, the current is inhibited from crowding into the vias 43 a and 43 e at both ends among the vias 43 a through 43 e. Thus, the current evenly flows through the vias 43 a through 43 e. Since the current evenly flows through the vias 43 a through 43 e, the current also evenly flows through the connection members 95 a through 95 e and the vias 73 a through 73 e. Thus, a break due to electromigration is inhibited from occurring in the vias 43 a through 43 e, the connection members 95 a through 95 e, and the vias 73 a through 73 e.
As illustrated in FIG. 9C, in the wiring layer 72, the area of the region 90 a except the apertures 91 is less than the area of the region 90 b except the apertures 91. In addition, in the wiring layer 72, the area of the region 90 b except the apertures 91 is less than the area of the region 90 c except the apertures 91. Furthermore, in the wiring layer 72, the area of the region 90 c except the apertures 91 is less than area of the region 90 d except the aperture 91. Accordingly, the electrical resistance of the wiring layer 72 gradually decreases from the upstream to the downstream side in the flow direction of current. Thus, as in the first embodiment, the current effectively evenly flows through the vias 43 a through 43 e thanks to the synergy with the advantage obtained by gradually increasing the electrical resistance of the wiring layer 41 from the upstream to the downstream side in the flow direction of current.
As illustrated in FIG. 9A, the power supply unit 33 is preferably provided to the substrate 210, and the wiring layers 41 and 72 are preferably power supply layers to which a power-supply voltage is supplied from the power supply unit 33 and through which the current flows. When the wiring layers 41 and 72 are power supply layers, large current flows through the wiring layers 41 and 72. Thus, when the current crowds into the vias 43 a and 43 e at both ends among the vias 43 a through 43 e, a break due to electromigration is likely to occur. Therefore, when the wiring layers 41 and 72 are power supply layers, the aperture 54 is preferably provided in the wiring layer 41. The wiring layers 41 and 72 are not limited to power supply layers, and may be ground layers through which current flows from the electronic component 34 to a ground.
All examples and conditional language recited herein are intended for pedagogical purposes to aid the reader in understanding the invention and the concepts contributed by the inventor to furthering the art, and are to be construed as being without limitation to such specifically recited examples and conditions, nor does the organization of such examples in the specification relate to a showing of the superiority and inferiority of the invention. Although the embodiments of the present invention have been described in detail, it should be understood that the various change, substitutions, and alterations could be made hereto without departing from the spirit and scope of the invention.

Claims

What is claimed is:

1. A substrate including a first wiring layer coupled to another wiring layer through a plurality of vias, wherein

the first wiring layer has a structure in which

an area of a first region, which is enclosed by a first line segment and a second line segment, except an aperture located in the first region is greater than an area of a second region, which is enclosed by the second line segment and a third line segment, except an aperture located in the second region, the first line segment passing through a first connection part of a first via of the plurality of vias and being parallel to a first short side of the first wiring layer, the second line segment passing through a second connection part of a second via of the plurality of vias and being parallel to the first short side, the third line segment passing through a third connection part of a third via of the plurality of vias and being parallel to the first short side, the first connection part, the second connection part, and the third connection part being connected to the first wiring layer.

2. The substrate according to claim 1, further comprising:

a second wiring layer coupled to the first wiring layer through the plurality of vias, wherein

the second wiring layer has a structure in which

an area of a third region, which is enclosed by a fourth line segment and a fifth line segment, except an aperture located in the third region is less than an area of a fourth region, which is enclosed by the fifth line segment and a sixth line segment, except an aperture located in the fourth region, the fourth line segment passing through a fourth connection part of the first via and being parallel to a second short side of the second wiring layer, the fifth line segment passing through a fifth connection part of the second via and being parallel to the second short side, the sixth line segment passing through a sixth connection part of the third via and being parallel to the second short side, the fourth connection part, the fifth connection part, and the sixth connection part being connected to the second wiring layer.

3. The substrate according to claim 2, wherein

the first region is located further upstream than the second region in a flow direction of current flowing through the first wiring layer, and

the third region is located further upstream than the fourth region in a flow direction of current flowing through the second wiring layer.

4. The substrate according to claim 1, wherein

a number of the apertures located in the first region is less than a number of the apertures located in the second region.

5. The substrate according to claim 2, wherein

a number of the apertures located in the third region is greater than a number of the apertures located in the fourth region.

6. The substrate according to claim 1, wherein

a number of the apertures located in the first region is one,

a number of the apertures located in the second region is one, and

the aperture located in the first region is smaller than the aperture located in the second region.

7. The substrate according to claim 2, wherein

a number of the apertures located in the third region is one,

a number of the apertures located in the fourth region is one, and

the aperture located in the third region is larger than the aperture located in the fourth region.

8. The substrate according to claim 1, wherein

the aperture located in the first region and the aperture located in the second region are cutouts located at a first long side of the first wiring layer.

9. The substrate according to claim 2, wherein

the aperture located in the third region and the aperture located in the fourth region are cutouts located at a second long side of the second wiring layer.

10. The substrate according to claim 1, wherein

a sum of an area of the aperture located in the first region is less than a sum of an area of the aperture located in the second region.

11. The substrate according to claim 2, wherein

a sum of an area of the aperture located in the third region is greater than a sum of an area of the aperture located in the fourth region.

12. The substrate according to claim 2, wherein

the first wiring layer and the second wiring layer are power supply layers to which current is supplied from a power supply unit or ground layers into which the current flows.

13. The substrate according to claim 1, wherein

the first wiring layer has a structure in which a length of a seventh line segment except the aperture located in the first region is longer than a length of an eighth line segment except the aperture located in the second region, the seventh line segment passing through the aperture located in the first region and being parallel to the first short side, the eighth line segment passing through the aperture located in the second region and being parallel to the first short side.

14. The substrate according to claim 1, wherein

the plurality of vias are arranged next to each other from an end of the first wiring layer, and are coupled to the first wiring layer.

15. The substrate according to claim 1, wherein

the aperture located in the first region and the aperture located in the second region penetrate though the first wiring layer.

16. The substrate according to claim 2, wherein

the aperture located in the third region and the aperture located in the fourth region penetrate through the second wiring layer.

17. An electronic device including a substrate having a first wiring layer coupled to another wiring layer through a plurality of vias, wherein

the first wiring layer has a structure in which