US20190198460A1 - Circuit system having compact decoupling structure - Google Patents

Circuit system having compact decoupling structure Download PDF

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Publication number
US20190198460A1
US20190198460A1 US15/851,461 US201715851461A US2019198460A1 US 20190198460 A1 US20190198460 A1 US 20190198460A1 US 201715851461 A US201715851461 A US 201715851461A US 2019198460 A1 US2019198460 A1 US 2019198460A1
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United States
Prior art keywords
decoupling
die
metal contacts
substrate
circuit
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Abandoned
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US15/851,461
Inventor
Masaru Haraguchi
Yoshitaka Fujiishi
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AP Memory Technology Corp
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AP Memory Technology Corp
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Publication date
Application filed by AP Memory Technology Corp filed Critical AP Memory Technology Corp
Priority to US15/851,461 priority Critical patent/US20190198460A1/en
Assigned to AP Memory Technology Corp. reassignment AP Memory Technology Corp. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FUJIISHI, YOSHITAKA, HARAGUCHI, MASARU
Priority to TW107138079A priority patent/TWI689231B/en
Priority to TW108142172A priority patent/TWI743595B/en
Publication of US20190198460A1 publication Critical patent/US20190198460A1/en
Priority to US16/701,792 priority patent/US10978413B2/en
Abandoned legal-status Critical Current

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    • H05K2201/10734Ball grid array [BGA]; Bump grid array

Definitions

  • the present invention relates to an AC (alternating current) signals decoupling structure, especially to a circuit system having a compact AC signals decoupling structure.
  • a decoupling means is usually adopted in practical circuit designs.
  • FIG. 1 illustrates a cross-sectional view of a circuit system having a decoupling structure of prior art.
  • the circuit system includes a mother board 10 , a circuit unit 11 , and a decoupling capacitor 12 .
  • the mother board 10 is used for carrying the circuit unit 11 and the decoupling capacitor 12 .
  • the circuit unit 11 has a substrate 11 a , a die 11 b , and a plurality of metal contacts 11 c , the die 11 b being formed on the top surface of the substrate 11 a , the metal contacts 11 c being formed on the bottom surface of the substrate 11 a and soldered onto the mother board 10 .
  • the decoupling capacitor 12 is placed on the top surface of the substrate 11 a and beside the die 11 b for providing an AC signals decoupling function.
  • FIG. 2 illustrates a cross-sectional view of another circuit system having a decoupling structure of prior art.
  • the circuit system includes a mother board 10 , a circuit unit 11 , and a decoupling capacitor 12 .
  • the mother board 10 is used for carrying the circuit unit 11 and the decoupling capacitor 12 .
  • the circuit unit 11 has a substrate 11 a , a die 11 b , and a plurality of metal contacts 11 c , the die 11 b being formed on the top surface of the substrate 11 a , the metal contacts 11 c being formed on the bottom surface of the substrate 11 a and soldered onto the mother board 10 .
  • the decoupling capacitor 12 is placed on the mother board 10 and beside the circuit unit 11 for providing an AC signals decoupling function.
  • the metal contacts 11 c can be BGA (ball grid array) contacts.
  • the decoupling capacitor 12 is required to possess large capacitance to provide the AC signals decoupling function, the size of the decoupling capacitor 12 will be quite large to compromise the form factor of both the circuit systems of FIG. 1 and FIG. 2 .
  • there is a length of conductive trace connecting the decoupling capacitor 12 and the die 11 b there will be substantial parasite resistance and parasite inductance to compromise the AC signals decoupling effect.
  • an LC resonant frequency can be introduced into the circuit unit 11 due to the combination of the parasite inductance and the decoupling capacitor 12 .
  • One objective of the present invention is to disclose a circuit system having compact decoupling structure to provide a low profile form factor.
  • Another objective of the present invention is to disclose a circuit system having compact decoupling structure to provide low parasite resistance and low parasite inductance to optimize the AC signals decoupling function.
  • circuit system having compact decoupling structure including:
  • At least one circuit unit each having a substrate, a logic-circuit die, a plurality of first metal contacts, and a plurality of second metal contacts
  • the substrate has a first surface and a second surface opposing the first surface
  • the first metal contacts are formed on the first surface and soldered onto the mother board
  • the second metal contacts are formed on the logic-circuit die and soldered onto the second surface of the substrate to form flip-chip pillars
  • the flip-chip pillars determine a height of a gap between the logic-circuit die and the substrate
  • At least one decoupling unit for providing an AC signals decoupling function for the at least one circuit unit
  • each of the at least one decoupling unit is placed in the gap of one said circuit unit and includes a mother die, at least one stack-type integrated-passive-device die, and a plurality of third metal contacts, the third metal contacts being formed on the mother die and soldered onto the logic-circuit die, and the at least one stack-type integrated-passive-device die each having a plurality of fourth metal contacts formed thereon and soldered onto the mother die.
  • the second metal contacts are controlled-collapse-chip-connection bumps.
  • the third metal contacts are controlled-collapse-chip-connection bumps.
  • the fourth metal contacts are Cu-pillar-with-solder-cap bumps.
  • the at least one stack-type integrated-passive-device die includes at least one decoupling capacitor.
  • the decoupling capacitor is a stack-type capacitor.
  • the first metal contacts are BGA contacts.
  • At least one circuit unit each having a substrate, at least one die, and a plurality of metal contacts, the substrate having a first surface and a second surface opposing the first surface, the at least one die being formed on the first surface, the metal contacts being formed on the second surface and soldered onto the mother board, and a gap being formed between the substrate and the mother board and having a height less than 50 micrometers;
  • At least one decoupling unit being placed in the gap and soldered onto the substrate for providing a decoupling function for the at least one circuit unit.
  • the decoupling unit includes a discrete capacitor having a height less than 30 micrometers.
  • the discrete capacitor is a stack-type capacitor.
  • the metal contacts are BGA (ball grid array) contacts.
  • At least one circuit unit each having a substrate, at least one first die, at least one second die, and a plurality of metal contacts, the substrate having a first surface and a second surface opposing the first surface, a gap being formed between the substrate and the mother board and having a height less than 50 micrometers, the at least one first die being formed on the first surface, the at least one second die being embedded in an inner region of the substrate, the inner region having a height less than 50 micrometers, and the metal contacts being formed on the second surface and soldered onto the mother board; and
  • At least one decoupling unit being placed in the inner region and connected electrically with the at least one second die in close proximity, or placed in the gap and soldered onto the substrate for providing an AC signals decoupling function for the at least one circuit unit.
  • the decoupling unit includes a discrete capacitor having a height less than 30 micrometers.
  • the discrete capacitor is a stack-type capacitor.
  • the metal contacts are BGA (ball grid array) contacts.
  • FIG. 1 illustrates a cross-sectional view of a circuit system having a decoupling structure of prior art.
  • FIG. 2 illustrates a cross-sectional view of another circuit system having a decoupling structure of prior art.
  • FIG. 3 illustrates a cross-sectional view of a circuit system having compact decoupling structure according to one embodiment of the present invention.
  • FIG. 4 illustrates a cross-sectional view of a circuit system having compact decoupling structure according to another embodiment of the present invention.
  • FIG. 5 illustrates a cross-sectional view of a circuit system having compact decoupling structure according to still another embodiment of the present invention.
  • FIG. 3 illustrates a cross-sectional view of a circuit system having compact decoupling structure according to one embodiment of the present invention.
  • the circuit system having compact decoupling structure includes a mother board 100 , at least one circuit unit 110 , and at least one decoupling unit 120 .
  • the mother board 100 is used for carrying the at least one circuit unit 110 and the at least one decoupling unit 120 .
  • Each circuit unit 110 has a substrate 111 , at least one die 112 , and a plurality of first metal contacts 113 .
  • the substrate 111 has a first surface 111 a and a second surface 111 b opposing the first surface 111 a.
  • the at least one die 112 which can be a logic-circuit die, has a plurality of second metal contacts 113 a .
  • the second metal contacts 113 a can be C4 (controlled-collapse-chip-connection) bumps formed on the die 112 and soldered onto the second surface 111 b to form flip-chip pillars, and thereby determine the height of a gap between the die 112 and the substrate 111 , the gap being used for accommodating the decoupling unit 120 .
  • the first metal contacts 113 which can be BGA (ball grid array) contacts, are formed on the first surface 111 a and soldered onto the mother board 100 .
  • the decoupling unit 120 is placed in the gap and soldered onto the die 112 for providing an AC signals decoupling function for the circuit unit 110 .
  • the decoupling unit 120 includes a mother die 120 a , at least one stack-type integrated-passive-device die 120 b , a plurality of third metal contacts 120 c , and a plurality of fourth metal contacts 120 d.
  • the third metal contacts 120 c which can be C4 (controlled-collapse-chip-connection) bumps, are formed on the mother die 120 a and soldered onto the die 112 , and each of the at least one stack-type integrated-passive-device die 120 b has the fourth metal contacts 120 d , which can be C2 (Cu-pillar-with-solder-cap) bumps, formed thereon and soldered onto the mother die 120 a.
  • C4 controlled-collapse-chip-connection
  • the at least one stack-type integrated-passive-device die 120 b includes at least one decoupling capacitor, which is preferred to be stack-type capacitor to provide a high capacitance density.
  • the stack-type capacitor can have multiple MIM (metal-insulator-metal) sandwich layers stacked in a small volume to provide sufficient capacitance for the AC signals decoupling function.
  • the circuit system of FIG. 3 can have a compact decoupling structure to provide a low profile form factor.
  • the compact decoupling structure can provide low parasite resistance and low parasite inductance to optimize the AC signals decoupling function.
  • FIG. 4 illustrates a cross-sectional view of a circuit system having compact decoupling structure according to another embodiment of the present invention.
  • the circuit system having compact decoupling structure includes a mother board 100 , at least one circuit unit 110 , and at least one decoupling unit 120 .
  • the mother board 100 is used for carrying the at least one circuit unit 110 and the at least one decoupling unit 120 .
  • Each circuit unit 110 has a substrate 111 , at least one die 112 , and a plurality of metal contacts 113 , the substrate 111 having a first surface 111 a and a second surface 111 b opposing the first surface 111 a , the at least one die 112 being formed on the first surface 111 a , the metal contacts 113 being formed on the second surface 111 b and soldered onto the mother board 100 .
  • a gap is formed between the substrate 111 and the mother board 100 and has a height less than 50 micrometers.
  • the metal contacts are BGA (ball grid array) contacts.
  • the at least one decoupling unit 120 is placed in the gap and soldered onto the substrate 111 for providing an AC signals decoupling function for the at least one circuit unit 110 .
  • the decoupling unit 120 includes a discrete capacitor having a height less than 30 micrometers, and the discrete capacitor is preferred to be a stack-type capacitor to provide a high capacitance density.
  • the stack-type capacitor can have multiple MIM (metal-insulator-metal) sandwich layers stacked in a small volume to provide sufficient capacitance for the AC signals decoupling function.
  • the circuit system of FIG. 4 can have a compact decoupling structure to provide a low profile form factor.
  • the compact decoupling structure can provide low parasite resistance and low parasite inductance to optimize the AC signals decoupling function.
  • FIG. 5 illustrates a cross-sectional view of a circuit system having compact decoupling structure according to still another embodiment of the present invention.
  • the circuit system having compact decoupling structure includes a mother board 100 , at least one circuit unit 110 , and at least one decoupling unit 120 .
  • the mother board 100 is used for carrying the at least one circuit unit 110 and the at least one decoupling unit 120 .
  • Each circuit unit 110 has a substrate 111 , at least one first die 112 a , at least one second die 112 b , and a plurality of metal contacts 113 , the substrate 111 having a first surface 111 a and a second surface 111 b opposing the first surface 111 a.
  • the at least one first die 112 a is formed on the first surface 111 a , and the at least one second die 112 b is embedded in an inner region 1111 of the substrate 111 , the inner region 1111 having a height less than 50 micrometers.
  • the metal contacts 113 are formed on the second surface 111 b and soldered onto the mother board 100 , and a gap is formed between the substrate 111 and the mother board 100 and has a height less than 50 micrometers.
  • the metal contacts 113 are BGA (ball grid array) contacts.
  • the at least one decoupling unit 120 is placed in the inner region 1111 and connected electrically with the at least one second die 112 b in close proximity, or placed in the gap and soldered onto the substrate 111 for providing an AC signals decoupling function for the at least one circuit unit 110 .
  • the decoupling unit 120 includes a discrete capacitor having a height less than 30 micrometers, and the discrete capacitor is preferred to be a stack-type capacitor to provide a high capacitance density.
  • the stack-type capacitor can have multiple MIM (metal-insulator-metal) sandwich layers stacked in a small volume to provide sufficient capacitance for the AC signals decoupling function.
  • the circuit system of FIG. 5 can have a compact decoupling structure to provide a low profile form factor.
  • the compact decoupling structure can provide low parasite resistance and low parasite inductance to optimize the AC signals decoupling function.
  • the present invention can therefore provide the advantages as follows:
  • the circuit system having compact decoupling structure of the present invention can provide a low profile form factor.
  • the circuit system having compact decoupling structure of the present invention can provide low parasite resistance and low parasite inductance to optimize the AC signals decoupling function.

Abstract

A circuit system having compact decoupling structure, including: a mother board; at least one circuit unit, each having a substrate, a logic-circuit die, a plurality of first metal contacts, and a plurality of second metal contacts, the substrate having a first surface and a second surface, the first metal contacts being formed on the first surface and soldered onto the mother board, the second metal contacts being formed on the logic-circuit die and soldered onto the second surface to form flip-chip pillars, and the flip-chip pillars determining a height of a gap between the die and the substrate; and at least one decoupling unit for providing an AC signals decoupling function for the at least one circuit unit; wherein each of the at least one decoupling unit is placed in the gap of one said circuit unit and includes a mother die and at least one stack-type integrated-passive-device die.

Description

    BACKGROUND OF THE INVENTION Field of the Invention
  • The present invention relates to an AC (alternating current) signals decoupling structure, especially to a circuit system having a compact AC signals decoupling structure.
  • Description of the Related Art
  • To protect a powered circuit system from being interfered by switching noises or AC signals from a power supply circuit, a decoupling means is usually adopted in practical circuit designs.
  • Please refer to FIG. 1, which illustrates a cross-sectional view of a circuit system having a decoupling structure of prior art. As illustrated in FIG. 1, the circuit system includes a mother board 10, a circuit unit 11, and a decoupling capacitor 12.
  • The mother board 10 is used for carrying the circuit unit 11 and the decoupling capacitor 12.
  • The circuit unit 11 has a substrate 11 a, a die 11 b, and a plurality of metal contacts 11 c, the die 11 b being formed on the top surface of the substrate 11 a, the metal contacts 11 c being formed on the bottom surface of the substrate 11 a and soldered onto the mother board 10.
  • The decoupling capacitor 12 is placed on the top surface of the substrate 11 a and beside the die 11 b for providing an AC signals decoupling function.
  • For another decoupling structure, please refer to FIG. 2, which illustrates a cross-sectional view of another circuit system having a decoupling structure of prior art. As illustrated in FIG. 2, the circuit system includes a mother board 10, a circuit unit 11, and a decoupling capacitor 12.
  • The mother board 10 is used for carrying the circuit unit 11 and the decoupling capacitor 12.
  • The circuit unit 11 has a substrate 11 a, a die 11 b, and a plurality of metal contacts 11 c, the die 11 b being formed on the top surface of the substrate 11 a, the metal contacts 11 c being formed on the bottom surface of the substrate 11 a and soldered onto the mother board 10.
  • The decoupling capacitor 12 is placed on the mother board 10 and beside the circuit unit 11 for providing an AC signals decoupling function.
  • To minimize the form factor of a circuit system, the metal contacts 11 c can be BGA (ball grid array) contacts. However, as the decoupling capacitor 12 is required to possess large capacitance to provide the AC signals decoupling function, the size of the decoupling capacitor 12 will be quite large to compromise the form factor of both the circuit systems of FIG. 1 and FIG. 2. Besides, as there is a length of conductive trace connecting the decoupling capacitor 12 and the die 11 b, there will be substantial parasite resistance and parasite inductance to compromise the AC signals decoupling effect. For example, an LC resonant frequency can be introduced into the circuit unit 11 due to the combination of the parasite inductance and the decoupling capacitor 12.
  • To solve the foregoing problems, a novel decoupling structure for a circuit system is needed.
  • SUMMARY OF THE INVENTION
  • One objective of the present invention is to disclose a circuit system having compact decoupling structure to provide a low profile form factor.
  • Another objective of the present invention is to disclose a circuit system having compact decoupling structure to provide low parasite resistance and low parasite inductance to optimize the AC signals decoupling function.
  • To attain the foregoing objectives, a circuit system having compact decoupling structure is proposed, including:
  • a mother board;
  • at least one circuit unit, each having a substrate, a logic-circuit die, a plurality of first metal contacts, and a plurality of second metal contacts, wherein the substrate has a first surface and a second surface opposing the first surface, the first metal contacts are formed on the first surface and soldered onto the mother board, the second metal contacts are formed on the logic-circuit die and soldered onto the second surface of the substrate to form flip-chip pillars, and the flip-chip pillars determine a height of a gap between the logic-circuit die and the substrate; and
  • at least one decoupling unit for providing an AC signals decoupling function for the at least one circuit unit;
  • wherein, each of the at least one decoupling unit is placed in the gap of one said circuit unit and includes a mother die, at least one stack-type integrated-passive-device die, and a plurality of third metal contacts, the third metal contacts being formed on the mother die and soldered onto the logic-circuit die, and the at least one stack-type integrated-passive-device die each having a plurality of fourth metal contacts formed thereon and soldered onto the mother die.
  • In one embodiment, the second metal contacts are controlled-collapse-chip-connection bumps.
  • In one embodiment, the third metal contacts are controlled-collapse-chip-connection bumps.
  • In one embodiment, the fourth metal contacts are Cu-pillar-with-solder-cap bumps.
  • In one embodiment, the at least one stack-type integrated-passive-device die includes at least one decoupling capacitor.
  • In one embodiment, the decoupling capacitor is a stack-type capacitor.
  • In one embodiment, the first metal contacts are BGA contacts.
  • To attain the foregoing objectives, another circuit system having compact decoupling structure is proposed, including:
  • a mother board;
  • at least one circuit unit, each having a substrate, at least one die, and a plurality of metal contacts, the substrate having a first surface and a second surface opposing the first surface, the at least one die being formed on the first surface, the metal contacts being formed on the second surface and soldered onto the mother board, and a gap being formed between the substrate and the mother board and having a height less than 50 micrometers; and
  • at least one decoupling unit, being placed in the gap and soldered onto the substrate for providing a decoupling function for the at least one circuit unit.
  • In one embodiment, the decoupling unit includes a discrete capacitor having a height less than 30 micrometers.
  • In one embodiment, the discrete capacitor is a stack-type capacitor.
  • In one embodiment, the metal contacts are BGA (ball grid array) contacts.
  • To attain the foregoing objectives, still another circuit system having compact decoupling structure is proposed, including:
  • a mother board;
  • at least one circuit unit, each having a substrate, at least one first die, at least one second die, and a plurality of metal contacts, the substrate having a first surface and a second surface opposing the first surface, a gap being formed between the substrate and the mother board and having a height less than 50 micrometers, the at least one first die being formed on the first surface, the at least one second die being embedded in an inner region of the substrate, the inner region having a height less than 50 micrometers, and the metal contacts being formed on the second surface and soldered onto the mother board; and
  • at least one decoupling unit, being placed in the inner region and connected electrically with the at least one second die in close proximity, or placed in the gap and soldered onto the substrate for providing an AC signals decoupling function for the at least one circuit unit.
  • In one embodiment, the decoupling unit includes a discrete capacitor having a height less than 30 micrometers.
  • In one embodiment, the discrete capacitor is a stack-type capacitor.
  • In one embodiment, the metal contacts are BGA (ball grid array) contacts.
  • To make it easier for our examiner to understand the objective of the invention, its structure, innovative features, and performance, we use preferred embodiments together with the accompanying drawings for the detailed description of the invention.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 illustrates a cross-sectional view of a circuit system having a decoupling structure of prior art.
  • FIG. 2 illustrates a cross-sectional view of another circuit system having a decoupling structure of prior art.
  • FIG. 3 illustrates a cross-sectional view of a circuit system having compact decoupling structure according to one embodiment of the present invention.
  • FIG. 4 illustrates a cross-sectional view of a circuit system having compact decoupling structure according to another embodiment of the present invention.
  • FIG. 5 illustrates a cross-sectional view of a circuit system having compact decoupling structure according to still another embodiment of the present invention.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Please refer to FIG. 3, which illustrates a cross-sectional view of a circuit system having compact decoupling structure according to one embodiment of the present invention. As illustrated in FIG. 3, the circuit system having compact decoupling structure includes a mother board 100, at least one circuit unit 110, and at least one decoupling unit 120.
  • The mother board 100 is used for carrying the at least one circuit unit 110 and the at least one decoupling unit 120.
  • Each circuit unit 110 has a substrate 111, at least one die 112, and a plurality of first metal contacts 113.
  • The substrate 111 has a first surface 111 a and a second surface 111 b opposing the first surface 111 a.
  • The at least one die 112, which can be a logic-circuit die, has a plurality of second metal contacts 113 a. The second metal contacts 113 a can be C4 (controlled-collapse-chip-connection) bumps formed on the die 112 and soldered onto the second surface 111 b to form flip-chip pillars, and thereby determine the height of a gap between the die 112 and the substrate 111, the gap being used for accommodating the decoupling unit 120.
  • The first metal contacts 113, which can be BGA (ball grid array) contacts, are formed on the first surface 111 a and soldered onto the mother board 100.
  • The decoupling unit 120 is placed in the gap and soldered onto the die 112 for providing an AC signals decoupling function for the circuit unit 110. The decoupling unit 120 includes a mother die 120 a, at least one stack-type integrated-passive-device die 120 b, a plurality of third metal contacts 120 c, and a plurality of fourth metal contacts 120 d.
  • The third metal contacts 120 c, which can be C4 (controlled-collapse-chip-connection) bumps, are formed on the mother die 120 a and soldered onto the die 112, and each of the at least one stack-type integrated-passive-device die 120 b has the fourth metal contacts 120 d, which can be C2 (Cu-pillar-with-solder-cap) bumps, formed thereon and soldered onto the mother die 120 a.
  • In a preferred embodiment, the at least one stack-type integrated-passive-device die 120 b includes at least one decoupling capacitor, which is preferred to be stack-type capacitor to provide a high capacitance density. In addition, the stack-type capacitor can have multiple MIM (metal-insulator-metal) sandwich layers stacked in a small volume to provide sufficient capacitance for the AC signals decoupling function.
  • Accordingly, the circuit system of FIG. 3 can have a compact decoupling structure to provide a low profile form factor. In addition, due to the high capacitance density of the stack-type capacitor and close proximity of the decoupling unit 120 to the die 112, the compact decoupling structure can provide low parasite resistance and low parasite inductance to optimize the AC signals decoupling function.
  • Please refer to FIG. 4, which illustrates a cross-sectional view of a circuit system having compact decoupling structure according to another embodiment of the present invention. As illustrated in FIG. 4, the circuit system having compact decoupling structure includes a mother board 100, at least one circuit unit 110, and at least one decoupling unit 120.
  • The mother board 100 is used for carrying the at least one circuit unit 110 and the at least one decoupling unit 120.
  • Each circuit unit 110 has a substrate 111, at least one die 112, and a plurality of metal contacts 113, the substrate 111 having a first surface 111 a and a second surface 111 b opposing the first surface 111 a, the at least one die 112 being formed on the first surface 111 a, the metal contacts 113 being formed on the second surface 111 b and soldered onto the mother board 100. A gap is formed between the substrate 111 and the mother board 100 and has a height less than 50 micrometers. In a possible embodiment, the metal contacts are BGA (ball grid array) contacts.
  • The at least one decoupling unit 120 is placed in the gap and soldered onto the substrate 111 for providing an AC signals decoupling function for the at least one circuit unit 110.
  • In a preferred embodiment, the decoupling unit 120 includes a discrete capacitor having a height less than 30 micrometers, and the discrete capacitor is preferred to be a stack-type capacitor to provide a high capacitance density. The stack-type capacitor can have multiple MIM (metal-insulator-metal) sandwich layers stacked in a small volume to provide sufficient capacitance for the AC signals decoupling function.
  • Accordingly, the circuit system of FIG. 4 can have a compact decoupling structure to provide a low profile form factor. In addition, due to the high capacitance density of the stack-type capacitor and close proximity of the decoupling unit 120 to the circuit unit 110, the compact decoupling structure can provide low parasite resistance and low parasite inductance to optimize the AC signals decoupling function.
  • Please refer to FIG. 5, which illustrates a cross-sectional view of a circuit system having compact decoupling structure according to still another embodiment of the present invention. As illustrated in FIG. 5, the circuit system having compact decoupling structure includes a mother board 100, at least one circuit unit 110, and at least one decoupling unit 120.
  • The mother board 100 is used for carrying the at least one circuit unit 110 and the at least one decoupling unit 120.
  • Each circuit unit 110 has a substrate 111, at least one first die 112 a, at least one second die 112 b, and a plurality of metal contacts 113, the substrate 111 having a first surface 111 a and a second surface 111 b opposing the first surface 111 a.
  • The at least one first die 112 a is formed on the first surface 111 a, and the at least one second die 112 b is embedded in an inner region 1111 of the substrate 111, the inner region 1111 having a height less than 50 micrometers.
  • The metal contacts 113 are formed on the second surface 111 b and soldered onto the mother board 100, and a gap is formed between the substrate 111 and the mother board 100 and has a height less than 50 micrometers. In a possible embodiment, the metal contacts 113 are BGA (ball grid array) contacts.
  • The at least one decoupling unit 120 is placed in the inner region 1111 and connected electrically with the at least one second die 112 b in close proximity, or placed in the gap and soldered onto the substrate 111 for providing an AC signals decoupling function for the at least one circuit unit 110.
  • In a preferred embodiment, the decoupling unit 120 includes a discrete capacitor having a height less than 30 micrometers, and the discrete capacitor is preferred to be a stack-type capacitor to provide a high capacitance density. The stack-type capacitor can have multiple MIM (metal-insulator-metal) sandwich layers stacked in a small volume to provide sufficient capacitance for the AC signals decoupling function.
  • Accordingly, the circuit system of FIG. 5 can have a compact decoupling structure to provide a low profile form factor. In addition, due to the high capacitance density of the stack-type capacitor and close proximity of the decoupling unit 120 to the circuit unit 110, the compact decoupling structure can provide low parasite resistance and low parasite inductance to optimize the AC signals decoupling function.
  • Thanks to the designs mentioned above, the present invention can therefore provide the advantages as follows:
  • 1. The circuit system having compact decoupling structure of the present invention can provide a low profile form factor.
  • 2. The circuit system having compact decoupling structure of the present invention can provide low parasite resistance and low parasite inductance to optimize the AC signals decoupling function.
  • While the invention has been described by way of example and in terms of preferred embodiments, it is to be understood that the invention is not limited thereto. On the contrary, it is intended to cover various modifications and similar arrangements and procedures, and the scope of the appended claims therefore should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements and procedures.
  • In summation of the above description, the present invention herein enhances the performance over the conventional structure and further complies with the patent application requirements and is submitted to the Patent and Trademark Office for review and granting of the commensurate patent rights.

Claims (15)

1. A circuit system having compact decoupling structure, including:
a mother board;
at least one circuit unit, each having a substrate, a logic-circuit die, a plurality of first metal contacts, and a plurality of second metal contacts, wherein the substrate has a first surface and a second surface opposing the first surface, the first metal contacts are formed on the first surface and soldered onto the mother board, the second metal contacts are formed on the logic-circuit die and soldered onto the second surface of the substrate to form flip-chip pillars, and the flip-chip pillars determine a height of a gap between the logic-circuit die and the substrate; and
at least one decoupling unit for providing an AC signals decoupling function for the at least one circuit unit;
wherein, each of the at least one decoupling unit is placed in the gap of one said circuit unit and includes a mother die, at least one stack-type integrated-passive-device die, and a plurality of third metal contacts, the third metal contacts being formed on the mother die and soldered onto the logic-circuit die, and the at least one stack-type integrated-passive-device die each having a plurality of fourth metal contacts formed thereon and soldered onto the mother die.
2. The circuit system having compact decoupling structure as disclosed in claim 1, wherein the second metal contacts are controlled-collapse-chip-connection bumps.
3. The circuit system having compact decoupling structure as disclosed in claim 1, wherein the third metal contacts are controlled-collapse-chip-connection bumps.
4. The circuit system having compact decoupling structure as disclosed in claim 1, wherein the fourth metal contacts are Cu-pillar-with-solder-cap bumps.
5. The circuit system having compact decoupling structure as disclosed in claim 1, wherein the at least one stack-type integrated-passive-device die includes at least one decoupling capacitor.
6. The circuit system having compact decoupling structure as disclosed in claim 5, wherein the decoupling capacitor is a stack-type capacitor.
7. The circuit system having compact decoupling structure as disclosed in claim 1, wherein the first metal contacts are BGA contacts.
8. A circuit system having compact decoupling structure, including:
a mother board;
at least one circuit unit, each having a substrate, at least one die, and a plurality of metal contacts, the substrate having a first surface and a second surface opposing the first surface, the at least one die being formed on the first surface, the metal contacts being formed on the second surface and soldered onto the mother board, and a gap being formed between the substrate and the mother board and having a height less than 50 micrometers; and
at least one decoupling unit, being placed in the gap and soldered onto the substrate for providing a decoupling function for the at least one circuit unit.
9. The circuit system having compact decoupling structure as disclosed in claim 8, wherein the decoupling unit includes a discrete capacitor having a height less than 30 micrometers.
10. The circuit system having compact decoupling structure as disclosed in claim 9, wherein the discrete capacitor is a stack-type capacitor.
11. The circuit system having compact decoupling structure as disclosed in claim 8, wherein the metal contacts are BGA contacts.
12. A circuit system having compact decoupling structure, including:
a mother board;
at least one circuit unit, each having a substrate, at least one first die, at least one second die, and a plurality of metal contacts, the substrate having a first surface and a second surface opposing the first surface, a gap being formed between the substrate and the mother board and having a height less than 50 micrometers, the at least one first die being formed on the first surface, the at least one second die being embedded in an inner region of the substrate, the inner region having a height less than 50 micrometers, and the metal contacts being formed on the second surface and soldered onto the mother board; and
at least one decoupling unit, being placed in the inner region and connected electrically with the at least one second die in close proximity, or placed in the gap and soldered onto the substrate for providing an AC signals decoupling function for the at least one circuit unit.
13. The circuit system having compact decoupling structure as disclosed in claim 12, wherein the decoupling unit includes a discrete capacitor having a height less than 30 micrometers.
14. The circuit system having compact decoupling structure as disclosed in claim 13, wherein the discrete capacitor is a stack-type capacitor.
15. The circuit system having compact decoupling structure as disclosed in claim 12, wherein the metal contacts are BGA contacts.
US15/851,461 2017-12-21 2017-12-21 Circuit system having compact decoupling structure Abandoned US20190198460A1 (en)

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Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6734539B2 (en) * 2000-12-27 2004-05-11 Lucent Technologies Inc. Stacked module package
US7294928B2 (en) * 2002-09-06 2007-11-13 Tessera, Inc. Components, methods and assemblies for stacked packages
JP2004128219A (en) * 2002-10-02 2004-04-22 Shinko Electric Ind Co Ltd Semiconductor device with additional function and its manufacturing method
WO2010059724A2 (en) * 2008-11-20 2010-05-27 Qualcomm Incorporated Capacitor die design for small form factors
JP2010212595A (en) * 2009-03-12 2010-09-24 Murata Mfg Co Ltd Package substrate
JP5330184B2 (en) * 2009-10-06 2013-10-30 新光電気工業株式会社 Electronic component equipment
US8466543B2 (en) * 2010-05-27 2013-06-18 International Business Machines Corporation Three dimensional stacked package structure
KR20110139983A (en) * 2010-06-24 2011-12-30 삼성전자주식회사 Semiconductor package
KR101321170B1 (en) * 2010-12-21 2013-10-23 삼성전기주식회사 Package and Method for manufacturing the same
KR101817159B1 (en) * 2011-02-17 2018-02-22 삼성전자 주식회사 Semiconductor package having TSV interposer and method of manufacturing the same
US8748828B2 (en) * 2011-09-21 2014-06-10 Kla-Tencor Corporation Interposer based imaging sensor for high-speed image acquisition and inspection systems
US9497861B2 (en) * 2012-12-06 2016-11-15 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for package with interposers
US9070627B2 (en) * 2013-09-11 2015-06-30 Broadcom Corporation Interposer package-on-package structure
US9379078B2 (en) * 2013-11-07 2016-06-28 Taiwan Semiconductor Manufacturing Company, Ltd. 3D die stacking structure with fine pitches

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US20200105688A1 (en) 2020-04-02
TWI743595B (en) 2021-10-21

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