US20180151585A1 - Method for manufacturing embedded non-volatile memory - Google Patents
Method for manufacturing embedded non-volatile memory Download PDFInfo
- Publication number
- US20180151585A1 US20180151585A1 US15/396,886 US201715396886A US2018151585A1 US 20180151585 A1 US20180151585 A1 US 20180151585A1 US 201715396886 A US201715396886 A US 201715396886A US 2018151585 A1 US2018151585 A1 US 2018151585A1
- Authority
- US
- United States
- Prior art keywords
- forming
- device structure
- oxide layer
- region
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 165
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 230000015654 memory Effects 0.000 title description 15
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 150000004767 nitrides Chemical class 0.000 claims description 97
- 125000006850 spacer group Chemical group 0.000 claims description 60
- 238000002955 isolation Methods 0.000 claims description 40
- 238000003860 storage Methods 0.000 claims description 32
- 238000005530 etching Methods 0.000 description 44
- 238000002513 implantation Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 16
- 238000000206 photolithography Methods 0.000 description 16
- 238000000151 deposition Methods 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000004151 rapid thermal annealing Methods 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 230000003247 decreasing effect Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H01L27/11568—
-
- H01L21/28282—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
-
- H01L27/11573—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42344—Gate electrodes for transistors with charge trapping gate insulator with at least one additional gate, e.g. program gate, erase gate or select gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
Definitions
- IC semiconductor integrated circuit
- FIG. 1A through FIG. 1O are schematic cross-sectional views of intermediate stages showing a method for manufacturing a semiconductor device in accordance with various embodiments.
- FIG. 2 is a flow chart of a method for manufacturing a semiconductor device in accordance with various embodiments.
- first and second features are formed in direct contact
- additional features may be formed between the first and second features, such that the first and second features may not be in direct contact
- the term “one” or “the” of the single form may also represent the plural form.
- the terms such as “first” and “second” are used for describing various devices, areas and layers, etc., though such terms are only used for distinguishing one device, one area or one layer from another device, another area or another layer. Therefore, the first area can also be referred to as the second area without departing from the spirit of the claimed subject matter, and the others are deduced by analogy.
- the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
- the term “and/or” includes any and all combinations of one or more of the associated listed items.
- the 1.5 T ESF3 memory is formed with a polysilicon storage by using a logic first process, i.e. a logic well is formed before a non-volatile memory (NVM) process.
- the logic well is impacted by the subsequent non-volatile memory process, and resulting in a logic device shift.
- the 1.5 T ESF3 memory is formed by using a logic last process, i.e. a logic well is formed after a non-volatile memory process, such that the shift of the logic device is decreased.
- an implantation operation of a low voltage well of a low voltage device is performed through a gate oxide layer of a high voltage device, such that an implant profile of the low voltage well is affected, and resulting in the low voltage device shift.
- the applying of the polysilicon storage induces a triple polysilicon process, and thus increasing complex of the process of manufacturing the 1.5 T ESF3 memory.
- Embodiments of the present disclosure are directed to providing a method for manufacturing the semiconductor device, in which after a logic well of a logic device and a high voltage well of a high voltage device are formed, dummy structures are formed to cover the logic well and the high voltage well as device structures are formed, such that the logic well and the high voltage well can be prevented by the dummy structures during subsequent high temperature processes, thereby greatly decreasing shift of the logic device and the high voltage device.
- an oxide/nitride/oxide (ONO) structure is formed as a trap storage structure of each of device structures, the ONO trap storage structure is thinner than a polysilicon floating gate of a conventional memory, and a control gate of the device structure can be directly disposed on the ONO trap storage structure, such that the thickness of the device structure is reduced.
- ONO trap storage structure a triple polysilicon process can be omitted.
- each of the device structures has a lower structure topology which is close to that of a logic gate, such that the subsequent patterning processes of the semiconductor device are relatively easy, thereby simplifying a process for manufacturing the semiconductor device and integration of the processes of the semiconductor device and other device, and decreasing process time and reducing process cost.
- FIG. 1A through FIG. 1O are schematic cross-sectional views of intermediate stages showing a method for manufacturing a semiconductor device in accordance with various embodiments.
- a substrate 100 is provided.
- the substrate 100 may be a semiconductor substrate.
- the substrate 100 may be composed of a single-crystalline semiconductor material or a compound semiconductor material.
- silicon or germanium may be used as a material forming the substrate 100 .
- the substrate 100 may be a silicon on insulator substrate.
- various isolation structures 102 a - 102 d are formed in the substrate 100 .
- a hard mask (not shown) is formed to cover the substrate 100 , the hard mask is then patterned by a photolithography process and an etch process, and portions of the substrate 100 , which are not covered by the patterned hard mask, are removed to form various trenches in the substrate 100 , an isolation material is formed to fill the trenches and to cover the hard mask layer, and then the hard mask and the isolation material over the hard mask layer are removed to form the isolation structures 102 a - 102 d in the substrate 100 .
- the isolation structures 102 a - 102 d formed in the substrate 100 at least define a first region 104 a , a second region 104 b , and a third region 104 c , in which the first region 104 a is located between the isolation structures 102 b and 102 c , the second region 104 b is located between the isolation structures 102 a and 102 b , and the third region 104 c is located between the isolation structures 102 c and 102 d .
- the isolation structures 102 a , 102 b , 102 c , and 102 d may be shallow trench isolation (STI) structures.
- the isolation material may be formed by using a high density plasma chemical vapor deposition (HDP CVD) method.
- a pad oxide layer 106 is blanketly formed to cover the substrate 100 by a deposition method or a thermal oxidization method.
- a logic well 108 is formed in the substrate 100 in the second region 104 b by performing an implantation process on the second region 104 b .
- a high voltage well 110 is formed in the substrate 100 in the third region 104 c by performing an implantation process on the third region 104 c .
- the logic well 108 and the high voltage well 110 are formed using dopants, such as boron and phosphorous.
- the portion of the pad oxide layer 106 in the first region 104 a is removed by using a photolithography method and an etching method.
- the remaining portions of the pad oxide layer 106 cover the second region 104 b and the third region 104 c , as shown in FIG. 1A .
- an oxide layer 112 , a nitride layer 114 , and an oxide layer 116 are formed to cover the substrate 100 in sequence to form an ONO structure.
- the oxide layer 112 , the nitride layer 114 , and the oxide layer 116 may be formed by using a deposition method, such as a chemical vapor deposition (CVD) method.
- the oxide layers 112 and 116 may be formed from silicon oxide, and the nitride layer 114 may be formed from silicon nitride.
- the oxide layer 112 is formed to have a thickness ranging from about 10 angstrom to about 20 angstrom
- the nitride layer 114 is formed to have a thickness ranging from about 100 angstrom to about 150 angstrom
- the oxide layer 116 is formed to have a thickness ranging from about 30 angstrom to about 50 angstrom.
- a control gate layer 118 is formed to cover the oxide layer 116 by using a deposition method, such as a chemical vapor deposition method.
- the control gate layer 118 may be formed from polysilicon.
- the control gate layer 118 is directly deposed on the oxide layer 116 .
- a nitride layer 120 , an oxide layer 122 , and a nitride layer 124 are formed to cover the control gate layer 118 in sequence to form an NON structure.
- the nitride layer 120 , the oxide layer 122 , and the nitride layer 124 form a cap structure.
- the nitride layer 120 , the oxide layer 122 , and the nitride layer 124 may be formed by using a deposition method, such as a chemical vapor deposition method.
- the nitride layers 120 and 124 may be formed from silicon nitride, and the oxide layer 122 may be formed from silicon oxide.
- a portion of the nitride layer 124 , a portion of the oxide layer 122 , a portion of the nitride layer 120 , and a portion of the control gate layer 118 are removed by using a photolithography method and an etching method.
- the remaining portions of the control gate layer 118 disposed on the first region 104 a form control gates 118 a and 118 b respectively, and the remaining portions of the control gate layer 118 disposed on the second region 104 b and the third region 104 c form control gates 118 c and 118 d respectively.
- the remaining portion 120 a of the nitride layer 120 , the remaining portion 122 a of the oxide layer 122 , and the remaining portion 124 a of the nitride layer 124 are stacked on the control gate 118 a to form a stacked structure 126 a with the control gate 118 a .
- the remaining portion 120 b of the nitride layer 120 , the remaining portion 122 b of the oxide layer 122 , and the remaining portion 124 b of the nitride layer 124 are stacked on the control gate 118 b to form a stacked structure 126 b with the control gate 118 b .
- the remaining portion 120 c of the nitride layer 120 , the remaining portion 122 c of the oxide layer 122 , and the remaining portion 124 c of the nitride layer 124 are stacked on the control gate 118 c to form a stacked structure 126 c with the control gate 118 c .
- the remaining portion 120 d of the nitride layer 120 , the remaining portion 122 d of the oxide layer 122 , and the remaining portion 124 d of the nitride layer 124 are stacked on the control gate 118 d to form a stacked structure 126 d with the control gate 118 d.
- spacers 128 a - 128 d are respectively formed on sidewalls of the stacked structures 126 a - 126 d to complete device structures 130 a - 130 d , in which the device structures 130 a and 130 b are located on the first region 104 a , the device structure 130 c is located on the second region 104 b and covers the logic well 108 , and the device structure 130 d is located on the second region 104 c and covers the high voltage well 110 .
- the device structure 130 a - 130 d are separated from each other.
- each of the spacers 128 a - 128 d is formed to include an oxide layer 132 , a nitride layer 134 , and an oxide layer 136 stacked on the sidewall of the respective stacked structure 126 a , 126 b , 126 c or 126 d in sequence.
- forming the spacers 128 a - 128 d includes blanketly forming the oxide layer 132 , the nitride layer 134 , and the oxide layer 136 in sequence to cover the stacked structures 126 a - 126 d and the oxide layer 116 , and etching the oxide layer 132 , the nitride layer 134 , and the oxide layer 136 to remove a portion of the oxide layer 132 , a portion of the nitride layer 134 , and a portion of the oxide layer 136 , so as to form the spacers 128 a - 128 d on the sidewalls of the stacked structure 126 a - 126 d respectively.
- the oxide layer 132 , the nitride layer 134 , and the oxide layer 136 may be formed by a deposition method, such as a chemical vapor deposition method. Etching the oxide layer 132 , the nitride layer 134 , and the oxide layer 136 may be performed by using an anisotropic etching method.
- etching the oxide layer 132 , the nitride layer 134 , and the oxide layer 136 includes etching the oxide layer 116 and the nitride layer 114 .
- the portion 112 a of the oxide layer 112 , the remaining portion 114 a of the nitride layer 114 , and the remaining portion 116 a of the oxide layer 116 stacked in sequence form a trap storage structure 138 a .
- the portion 112 b of the oxide layer 112 , the remaining portion 114 b of the nitride layer 114 , and the remaining portion 116 b of the oxide layer 116 stacked in sequence form a trap storage structure 138 b .
- the portion 112 c of the oxide layer 112 , the remaining portion 114 c of the nitride layer 114 , and the remaining portion 116 c of the oxide layer 116 stacked in sequence form a trap storage structure 138 c .
- the portion 112 d of the oxide layer 112 , the remaining portion 114 d of the nitride layer 114 , and the remaining portion 116 d of the oxide layer 116 stacked in sequence form a trap storage structure 138 d .
- the device structures 130 a - 130 d further respectively include the trap storage structures 138 a - 138 d .
- each of the device structures 130 c and 130 d further includes the pad oxide layer 106 .
- the device structures 130 c and 130 d are dummy device structures, and will be removed in the subsequent process.
- an implantation process 140 may be performed on the substrate 100 through the oxide layer 112 by using the device structures 130 a - 130 d as mask structures, so as to form a word line threshold voltage (Vt) 142 , a source side junction 144 , and a word line Vt 146 in the first region 104 a .
- the word line Vt 142 and the word line Vt 146 are respectively adjacent to the device structures 130 a and 130 b
- the source side junction 144 is located between the device structure 130 a and 130 b
- the source side junction 144 is opposite to the word line Vt 142 and the word line Vt 146 respectively.
- the implantation process 140 may be performed using dopants, such as boron and phosphorous.
- gap oxide layers 148 a and 148 b are formed on sidewalls of the spacers 128 a respectively, gap oxide layers 150 a and 150 b are formed on sidewalls of the spacers 128 b respectively, gap oxide layers 152 are formed on sidewalls of the spacers 128 c respectively, and gap oxide layers 154 are formed on sidewalls of the spacers 128 d respectively.
- the gap oxide layer 148 b and 150 b are disposed on the source side junction 144 .
- forming the gap oxide layers 148 a , 148 b , 150 a , 150 b , 152 , and 154 includes forming an oxide layer to cover the device structures 130 a - 130 d and the oxide layer 112 on the substrate 100 , and etching the oxide layer to remove a portion of the oxide layer to form the gap oxide layers 148 a , 148 b , 150 a , 150 b , 152 , and 154 .
- the oxide layer may be formed from silicon oxide, and the oxide layer may be formed by a high temperature oxidation (HTO) method. Etching the oxide layer may be performed by an anisotropic etching method.
- HTO high temperature oxidation
- a rapid thermal annealing (RTA) process may be performed on the oxide layer between forming the oxide layer and etching the oxide layer.
- the device structure 130 d and the gap oxide layers 154 are removed, as shown in FIG. 1G .
- the gap oxide layers 154 may be firstly removed.
- the nitride layer 124 d , the oxide layer 122 d , and the nitride layer 120 d are removed by an etching method.
- the control gate 118 d , the oxide layer 116 , the nitride layer 114 are removed sequentially by an etching method.
- the oxide layer 112 and the pad oxide layer 106 are removed by a photolithography method, and an etching method or a dip method.
- a first gate oxide layer 156 is formed to cover the substrate 100 .
- the first gate oxide layer 156 may be formed to further cover the device structures 130 a - 130 c .
- the first gate oxide layer 156 may be formed to include a rapid thermal oxide (RTO) layer and a high temperature oxide layer on the rapid thermal oxide layer.
- RTO rapid thermal oxide
- the gap oxide layers 148 b and 150 b , located on the source side junction 144 , and the gap oxide layers 152 located on the sidewalls of the device structure 130 c are removed.
- the gap oxide layers 148 b , 150 b and 152 may be removed by using a photolithography method and an etching method.
- a source line junction 158 is formed in the source side junction 144 by performing an implantation process on the source side junction 144 .
- the first gate oxide layer 156 on the source line junction 158 is removed by an etching method, as shown in FIG. 1H .
- a rapid thermal annealing process may be optionally performed on the first gate oxide layer 156 and the source line junction 158 .
- the device structure 130 c and the first gate oxide layer 156 overlying the device structure 130 c are removed.
- the first gate oxide layer 156 overlying the device structure 130 c is removed by a dip method.
- the nitride layer 124 c , the oxide layer 122 c , and the nitride layer 120 c are removed by an etching method, then the control gate 118 c , the oxide layer 116 , the nitride layer 114 are removed sequentially by an etching method, and then the oxide layer 112 and the pad oxide layer 106 are removed by a photolithography method, and an etching method or a dip method.
- a second gate oxide layer 160 may be formed on the substrate 100 and the first gate oxide layer 156 .
- the second oxide layer 160 may be referred to an IO oxide layer.
- an operation of forming the second gate oxide layer 160 is performed by a logic dual gate oxide process, and a rapid thermal oxide layer of the second gate oxide layer 160 is firstly formed, and then a high temperature oxide layer of the second gate oxide layer 160 is formed on the rapid thermal oxide layer.
- a rapid thermal annealing process may be optionally performed on the second gate oxide layer 160 .
- portions of the second gate oxide layer 160 and portions of the first gate oxide layer 156 on the first region 104 a , the second region 104 b , and a portion of the isolation structure 102 c are removed by, for example, a photolithography method, and an etching method or a dip method. Then, referring to FIG. 1J again, a third gate oxide layer 161 is formed to cover the first region 104 a , the second region 104 b , and the third region 104 c .
- the third gate oxide layer 161 may be referred to a core oxide layer.
- the word line Vt 142 , the word line Vt 146 , the device structures 130 a and 130 b , the source line junction 158 , the logic well 108 , the isolation structure 102 b , and the portion of the isolation structure 102 c are exposed.
- the third gate oxide layer 161 is formed to cover the remaining portions of the second gate oxide layer 160 , the word line Vt 142 , the word line Vt 146 , the device structures 130 a and 130 b , the source line junction 158 , the logic well 108 , the isolation structure 102 b , and the portion of the isolation structure 102 c .
- the second region 104 b has the second gate oxide layer 160 and the third gate oxide layer 161 sequentially covering thereon.
- the device including the second gate oxide layer 160 may be referred to a medium voltage (MV) device.
- MV medium voltage
- a conductive layer 162 is formed to cover the third gate oxide layer 161 , the device structures 130 a and 130 b , and the gap oxide layers 148 a and 150 a .
- the conductive layer 162 may be formed from polysilicon, and may be formed by using a deposition method, such as a chemical vapor deposition method.
- a portion of the conductive layer 162 over the device structures 130 a and 130 b , the spacers 128 a and 128 b , and the gap oxide layers 148 a and 150 a is removed by using a photolithography method and an etching method.
- portions of the nitride layers 124 a and 124 b , portions of the spacers 128 a and 128 b , and portions of the gate oxide layers 148 a and 150 a are removed.
- the conductive layer 162 is further etched to form word lines 164 and 166 .
- the word line 164 is disposed on the third gate oxide layer 161 over the word line Vt 142 and on one of the spacers 128 a of the device structure 130 a , in which the gap oxide layer 148 a is located between the word line 164 and the spacer 128 a ; and the word line 166 is disposed on the third gate oxide layer 161 over the word line Vt 146 and on one of the spacers 128 b of the device structure 130 b , in which the gap oxide layer 150 a is located between the word line 166 and the spacer 128 b .
- the word lines 164 and 166 are respectively adjacent to the device structures 130 a and 130 b .
- forming of the word lines 164 and 166 further include forming a gate 168 of the logic device 170 on the logic well 108 and a gate 172 of the high voltage device 174 on the high voltage well 110 .
- the logic device 170 mainly includes the gate 168 and the third gate oxide layer 161
- the high voltage device 174 mainly includes the gate 172 , the first gate oxide layer 156 , the second gate oxide layer 160 , and the third gate oxide layer 161 .
- the device structures 130 c and 130 d can block the logic well 108 and the high voltage well 110 from the implantation process 140 . Furthermore, as shown in FIG. 1F , the logic well 108 and the high voltage well 110 can be prevented by the device structures 130 c and 130 d during the high temperature process (i.e. the rapid thermal annealing process of the gap oxide layers 148 a , 148 b , 150 a , 150 b , 152 , and 154 ). As shown in FIG. 1G , the device structures 130 c can further block the logic well 108 from rapid thermal annealing process of the first gate oxide layer 156 . Therefore, with the device structures 130 c and 130 d , the logic well 108 and the high voltage well 110 are well protected, thereby decreasing shift of the logic device 170 and the high voltage device 174 .
- the high temperature process i.e. the rapid thermal annealing process of the gap oxide layers 148 a , 148 b , 150 a , 150
- various lightly doped drains 176 a - 176 g are formed in the substrate 100 by using an implantation method.
- the lightly doped drains 176 a and 176 b are formed in the logic well 108 at opposite sides of the gate 168 and adjacent to the gate 168
- the lightly doped drain 176 c is formed in the word line Vt 142 adjacent the word line 164
- the lightly doped drain 176 d is formed in the word line Vt 146 adjacent the word line 166
- the lightly doped drains 176 e and 176 f are formed in the high voltage well 110 at opposite sides of the gate 172 and adjacent to the gate 172
- the lightly doped drain 176 g is formed in the source line junction 158 .
- various spacers 178 a - 178 h are formed on the third gate oxide layer 161 .
- the spacers 178 a and 178 b are formed on sidewalls of the gate 168
- the spacer 178 c is formed on a sidewall of the word line 164
- the spacer 178 d is formed on a sidewall of the device structure 130 a and over the lightly doped drain 176 g
- the spacer 178 e is formed on a sidewall of the device structure 130 b and over the lightly doped drain 176 g
- the spacer 178 f is formed on a sidewall of the word line 166
- the spacers 178 g and 178 h are formed on sidewalls of the gate 172 .
- an operation of forming the spacers 178 a - 178 h includes blanketly forming a spacer material layer (not shown) to cover the third gate oxide layer 161 , the gates 168 and 172 , the device structures 130 a and 130 b , and the word lines 164 and 166 , and performing an etching back process on the spacer material layer to remove a portion of the spacer material layer, a portion of the third gate oxide layer 161 , a portion of the second gate oxide layer 160 , and a portion of the first gate oxide layer 156 , so as to form the spacers 178 a - 178 h.
- a source/drain (S/D) implantation process is performed on the substrate 100 to form S/D regions 180 a - 180 g in the substrate 100 .
- the S/D regions 180 a - 180 g are respectively formed in the lightly doped drains 176 a - 176 g.
- a silicide process is performed on the S/D regions 180 a - 180 g and the word lines 164 and 166 , to form various silicide regions 182 a - 182 g , so as to substantially complete a semiconductor device 184 .
- the silicide regions 182 a - 182 k are respectively formed in the S/D regions 180 a - 180 g , the gate 168 , the word line 164 , the word line 166 , and the gate 172 .
- the semiconductor device 184 may be a 1.5 T third generation embedded super-flash (ESF3) with an ONO trap storage structure.
- the trap storage structures 138 a and 138 b are ONO structures, such that each of the trap storage structures 138 a and 138 b is thinner than a conventional polysilicon floating gate, and the control gates 118 a and 118 b can be directly stacked on the trap storage structures 138 a and 138 b .
- each of the device structures 130 a and 130 b has a lower structure topology which is close to that of other devices, such that the subsequent patterning processes of the semiconductor device 184 are relatively easy, thereby simplifying a process for manufacturing the semiconductor device 184 and integration of the processes of the semiconductor device 184 and the other devices, and decreasing process time and reducing process cost.
- the semiconductor device 184 can be programmed using a source side injection (SSI) programming method, and can be erased using a Fowler-Nordheim (FN) erase method, thereby decreasing power consumption of the semiconductor device 184 .
- SSI source side injection
- FN Fowler-Nordheim
- the semiconductor device 184 can be programmed by a SSI programming method, the programming operation of the semiconductor device 184 can be performed by a byte mode.
- FIG. 2 is a flow chart of a method for manufacturing a semiconductor device in accordance with various embodiments.
- the method begins at operation 200 , where a substrate 100 is provided.
- the substrate 100 may be a semiconductor substrate, such as a crystalline semiconductor substrate or a compound semiconductor substrate.
- silicon or germanium may be used as a material forming the substrate 100 .
- the substrate 100 may be a silicon on insulator substrate.
- various isolation structures 102 a - 102 d are formed in the substrate 100 to at least define a first region 104 a , a second region 104 b , and a third region 104 c , in which the first region 104 a is located between the isolation structures 102 b and 102 c , the second region 104 b is located between the isolation structures 102 a and 102 b , and the third region 104 c is located between the isolation structures 102 c and 102 d .
- a hard mask (not shown) is formed to cover the substrate 100 , the hard mask is then patterned by a photolithography process and an etch process, and portions of the substrate 100 , which are not covered by the patterned hard mask, are removed to form various trenches in the substrate 100 , an isolation material is formed to fill the trenches and to cover the hard mask layer, and then the hard mask and the isolation material over the hard mask layer are removed to form the isolation structures 102 a - 102 d in the substrate 100 .
- the isolation structures 102 a - 102 d may be shallow trench isolation structures.
- the isolation material may be formed by using a high density plasma chemical vapor deposition method.
- a pad oxide layer 106 is blanketly formed to cover the substrate 100 by a deposition method or a thermal oxidization method.
- a logic well 108 is formed in the substrate 100 in the second region 104 b by performing an implantation process on the second region 104 b .
- a high voltage well 110 is formed in the substrate 100 in the third region 104 c by performing an implantation process on the third region 104 c .
- the logic well 108 and the high voltage well 110 are formed using dopants, such as boron and phosphorous.
- the portion of the pad oxide layer 106 in the first region 104 a is removed by using a photolithography method and an etching method. The remaining portions of the pad oxide layer 106 cover the second region 104 b and the third region 104 c.
- device structures 130 a and 130 b are formed on the first region 104 a
- a device structure 130 c is formed on the second region 104 b and covering the logic well 108
- a device structure 130 d is formed on the third region 104 c and covering the high voltage well 110 .
- an oxide layer 112 , a nitride layer 114 , and an oxide layer 116 are formed to cover the substrate 100 in sequence to form an ONO structure.
- the oxide layer 112 , the nitride layer 114 , and the oxide layer 116 may be formed by using a deposition method.
- a control gate layer 118 is formed to cover the oxide layer 116 by using a deposition method.
- the control gate layer 118 is directly deposed on the oxide layer 116 .
- a nitride layer 120 , an oxide layer 122 , and a nitride layer 124 are formed to cover the control gate layer 118 in sequence to form an NON structure.
- the nitride layer 120 , the oxide layer 122 , and the nitride layer 124 may be formed by using a deposition method.
- a portion of the nitride layer 124 , a portion of the oxide layer 122 , a portion of the nitride layer 120 , and a portion of the control gate layer 118 are removed by using a photolithography method and an etching method.
- the remaining portions of the control gate layer 118 disposed on the first region 104 a form control gates 118 a and 118 b respectively, and the remaining portions of the control gate layer 118 disposed on the second region 104 b and the third region 104 c form control gates 118 c and 118 d respectively.
- the remaining portion 120 a of the nitride layer 120 , the remaining portion 122 a of the oxide layer 122 , and the remaining portion 124 a of the nitride layer 124 are stacked on the control gate 118 a to form a stacked structure 126 a with the control gate 118 a .
- the remaining portion 120 b of the nitride layer 120 , the remaining portion 122 b of the oxide layer 122 , and the remaining portion 124 b of the nitride layer 124 are stacked on the control gate 118 b to form a stacked structure 126 b with the control gate 118 b .
- the remaining portion 120 c of the nitride layer 120 , the remaining portion 122 c of the oxide layer 122 , and the remaining portion 124 c of the nitride layer 124 are stacked on the control gate 118 c to form a stacked structure 126 c with the control gate 118 c .
- the remaining portion 120 d of the nitride layer 120 , the remaining portion 122 d of the oxide layer 122 , and the remaining portion 124 d of the nitride layer 124 are stacked on the control gate 118 d to form a stacked structure 126 d with the control gate 118 d.
- spacers 128 a - 128 d are respectively formed on sidewalls of the stacked structures 126 a - 126 d to complete device structures 130 a - 130 d , in which the device structures 130 a - 130 d are separated from each other.
- each of the spacers 128 a - 128 d is formed to include an oxide layer 132 , a nitride layer 134 , and an oxide layer 136 stacked on the sidewall of the respective stacked structure 126 a , 126 b , 126 c or 126 d in sequence.
- forming the spacers 128 a - 128 d includes blanketly forming the oxide layer 132 , the nitride layer 134 , and the oxide layer 136 in sequence to cover the stacked structures 126 a - 126 d and the oxide layer 116 , and etching the oxide layer 132 , the nitride layer 134 , and the oxide layer 136 to remove a portion of the oxide layer 132 , a portion of the nitride layer 134 , and a portion of the oxide layer 136 , so as to form the spacers 128 a - 128 d on the sidewalls of the stacked structure 126 a - 126 d respectively.
- the oxide layer 132 , the nitride layer 134 , and the oxide layer 136 may be formed by a deposition method. Etching the oxide layer 132 , the nitride layer 134 , and the oxide layer 136 may be performed by using an anisotropic etching method.
- etching the oxide layer 132 , the nitride layer 134 , and the oxide layer 136 includes etching the oxide layer 116 and the nitride layer 114 .
- the portion 112 a of the oxide layer 112 , the remaining portion 114 a of the nitride layer 114 , and the remaining portion 116 a of the oxide layer 116 stacked in sequence form a trap storage structure 138 a .
- the portion 112 b of the oxide layer 112 , the remaining portion 114 b of the nitride layer 114 , and the remaining portion 116 b of the oxide layer 116 stacked in sequence form a trap storage structure 138 b .
- the portion 112 c of the oxide layer 112 , the remaining portion 114 c of the nitride layer 114 , and the remaining portion 116 c of the oxide layer 116 stacked in sequence form a trap storage structure 138 c .
- the portion 112 d of the oxide layer 112 , the remaining portion 114 d of the nitride layer 114 , and the remaining portion 116 d of the oxide layer 116 stacked in sequence form a trap storage structure 138 d .
- the device structures 130 a - 130 d further respectively include the trap storage structures 138 a - 138 d .
- each of the device structures 130 c and 130 d further includes the pad oxide layer 106 .
- an implantation process 140 may be performed on the substrate 100 through the oxide layer 112 by using the device structures 130 a - 130 d as mask structures, so as to form a word line Vt 142 , a source side junction 144 , and a word line Vt 146 in the first region 104 a .
- the word line Vt 142 and the word line Vt 146 are respectively adjacent to the device structures 130 a and 130 b , and the source side junction 144 is located between the device structure 130 a and 130 b , and the source side junction 144 is opposite to the word line Vt 142 and the word line Vt 146 respectively.
- gap oxide layers 148 a and 148 b may be formed on sidewalls of the spacers 128 a respectively
- gap oxide layers 150 a and 150 b may be formed on sidewalls of the spacers 128 b respectively
- gap oxide layers 152 may be formed on sidewalls of the spacers 128 c respectively
- gap oxide layers 154 may be formed on sidewalls of the spacers 128 d respectively.
- the gap oxide layer 148 b and 150 b are disposed on the source side junction 144 .
- forming the gap oxide layers 148 a , 148 b , 150 a , 150 b , 152 , and 154 includes forming an oxide layer to cover the device structures 130 a - 130 d and the oxide layer 112 on the substrate 100 , and etching the oxide layer to remove a portion of the oxide layer to form the gap oxide layers 148 a , 148 b , 150 a , 150 b , 152 , and 154 .
- the oxide layer may be formed by a high temperature oxidation method. Etching the oxide layer may be performed by an anisotropic etching method.
- a rapid thermal annealing process may be performed on the oxide layer between forming the oxide layer and etching the oxide layer.
- the device structure 130 d and the gap oxide layers 154 are removed.
- the gap oxide layers 154 may be firstly removed.
- the nitride layer 124 d , the oxide layer 122 d , and the nitride layer 120 d are removed by an etching method.
- the control gate 118 d , the oxide layer 116 , the nitride layer 114 are removed sequentially by an etching method.
- the oxide layer 112 and the pad oxide layer 106 are removed by a photolithography method, and an etching method or a dip method.
- a first gate oxide layer 156 is formed to cover the substrate 100 .
- the first gate oxide layer 156 may be formed to further cover the device structures 130 a - 130 c.
- a source line junction 158 is formed in the source side junction 144 .
- the gap oxide layers 148 b and 150 b located on the source side junction 144 , and the gap oxide layers 152 located on the sidewalls of the device structure 130 c are removed by using a photolithography method and an etching method.
- the source line junction 158 is formed in the source side junction 144 by performing an implantation process on the source side junction 144 .
- the first gate oxide layer 156 on the source line junction 158 is removed by an etching method.
- a rapid thermal annealing process may be optionally performed on the first gate oxide layer 156 and source line junction 158 .
- the device structure 130 c and the first gate oxide layer 156 overlying the device structure 130 c are removed.
- the first gate oxide layer 156 overlying the device structure 130 c is removed by a dip method.
- the nitride layer 124 c , the oxide layer 122 c , and the nitride layer 120 c are removed by an etching method.
- the control gate 118 c , the oxide layer 116 , the nitride layer 114 are removed sequentially by an etching method.
- the oxide layer 112 and the pad oxide layer 106 are removed by a photolithography method, and an etching method or a dip method.
- a second gate oxide layer 160 may be formed on the substrate 100 and the first gate oxide layer 156 .
- an operation of forming the second gate oxide layer 160 is performed by a logic dual gate oxide process, and a rapid thermal oxide layer of the second gate oxide layer 160 is firstly formed, and then a high temperature oxide layer of the second gate oxide layer 160 is formed on the rapid thermal oxide layer.
- a rapid thermal annealing process may be optionally performed on the second gate oxide layer 160 .
- portions of the second gate oxide layer 160 and the first gate oxide layer 156 on the first region 104 a , the second region 104 b , and a portion of the isolation structure 102 c are removed by, for example, a photolithography method, and an etching method or a dip method.
- the word line Vt 142 , the word line Vt 146 , the device structures 130 a and 130 b , the source line junction 158 , the logic well 108 , the isolation structure 102 b , and the portion of the isolation structure 102 c are exposed. Then, referring to FIG.
- a third gate oxide layer 161 is formed to cover the remaining portions of the second gate oxide layer 160 , the word line Vt 142 , the word line Vt 146 , the device structures 130 a and 130 b , the source line junction 158 , the logic well 108 , the isolation structure 102 b , and the portion of the isolation structure 102 c .
- the second region 104 b has the second gate oxide layer 160 and the third gate oxide layer 161 sequentially covering thereon.
- word lines 164 and 166 are formed.
- a conductive layer 162 is formed to cover the third gate oxide layer 161 , the device structures 130 a and 130 b , and the gap oxide layers 148 a and 150 a , as shown in FIG. 1K .
- the conductive layer 162 may be formed by using a deposition method. As shown in FIG. 1M
- a portion of the conductive layer 162 over the device structures 130 a and 130 b , the spacers 128 a and 128 b , and the gap oxide layers 148 a and 150 a is removed by using a photolithography method and an etching method.
- portions of the nitride layers 124 a and 124 b , portions of the spacers 128 a and 128 b , and portions of the gate oxide layers 148 a and 150 a are removed.
- the conductive layer 162 is further etched to form the word lines 164 and 166 .
- the word line 164 is disposed on the third gate oxide layer 161 over the word line Vt 142 and on one of the spacers 128 a of the device structure 130 a , in which the gap oxide layer 148 a is located between the word line 164 and the spacer 128 a .
- the word line 166 is disposed on the third gate oxide layer 161 over the word line Vt 146 and on one of the spacers 128 b of the device structure 130 b , in which the gap oxide layer 150 a is located between the word line 166 and the spacer 128 b .
- the word lines 164 and 166 are respectively adjacent to the device structures 130 a and 130 b .
- forming of the word lines 164 and 166 further include forming a gate 168 of the logic device 170 on the logic well 108 and a gate 172 of the high voltage device 174 on the high voltage well 110 .
- the logic device 170 mainly includes the gate 168 and the third gate oxide layer 161
- the high voltage device 174 mainly includes the gate 172 , the first gate oxide layer 156 , the second gate oxide layer 160 , and the third gate oxide layer 161 .
- lightly doped drains 176 a - 176 g may be optionally formed in the substrate 100 by using an implantation method.
- the lightly doped drains 176 a and 176 b are formed in the logic well 108 at opposite sides of the gate 168 and adjacent to the gate 168
- the lightly doped drain 176 c is formed in the word line Vt 142 adjacent the word line 164
- the lightly doped drain 176 d is formed in the word line Vt 146 adjacent the word line 166
- the lightly doped drains 176 e and 176 f are formed in the high voltage well 110 at opposite sides of the gate 172 and adjacent to the gate 172
- the lightly doped drain 176 g is formed in the source line junction 158 .
- various spacers 178 a - 178 h are formed on the third gate oxide layer 161 .
- the spacers 178 a and 178 b are formed on sidewalls of the gate 168
- the spacer 178 c is formed on a sidewall of the word line 164
- the spacer 178 d is formed on a sidewall of the device structure 130 a and over the lightly doped drain 176 g
- the spacer 178 e is formed on a sidewall of the device structure 130 b and over the lightly doped drain 176 g
- the spacer 178 f is formed on a sidewall of the word line 166
- the spacers 178 g and 178 h are formed on sidewalls of the gate 172 .
- an operation of forming the spacers 178 a - 178 h includes blanketly forming a spacer material layer to cover the third gate oxide layer 161 , the gates 168 and 172 , the device structures 130 a and 130 b , and the word lines 164 and 166 , and performing an etching back process on the spacer material layer to remove a portion of the spacer material layer, a portion of the third gate oxide layer 161 , a portion of the second gate oxide layer 160 , and a portion of the first gate oxide layer 156 .
- a S/D implantation process is performed on the substrate 100 to form S/D regions 180 a - 180 g in the substrate 100 .
- the S/D regions 180 a - 180 g are respectively formed in the lightly doped drains 176 a - 176 g .
- a silicide process is performed on the S/D regions 180 a - 180 g and the word lines 164 and 166 , to form various silicide regions 182 a - 182 k , so as to substantially complete a semiconductor device 184 .
- the silicide regions 182 a - 182 k are respectively formed in the S/D regions 180 a - 180 g , the gate 168 , the word line 164 , the word line 166 , and the gate 172 .
- the present disclosure discloses a method for manufacturing a semiconductor device.
- various isolation structures are formed in a substrate to at least define a first region, a second region, and a third region.
- a logic well and a high voltage well are respectively formed in the second region and the third region.
- a first device structure and a second device structure are formed on the first region, a third device structure is formed to cover the logic well, and a fourth device structure is formed to cover the high voltage well.
- a first word line Vt, a source side junction, and a second word line Vt are formed in the first region, in which the first word line Vt and the second word line Vt are respectively adjacent to the first device structure and the second device structure, and the source side junction is located between the first device structure and the second device structure, and is opposite to the first word line Vt and the second word line Vt respectively.
- the fourth device structure is removed.
- a source line junction is formed in the source side junction.
- the third device structure is removed.
- a first word line and a second word line are respectively formed on the first word line Vt adjacent to the first device structure and the second word line Vt adjacent to the second device structure.
- the present disclosure discloses a method for manufacturing a semiconductor device.
- various isolation structures are formed in a substrate to at least define a first region, a second region, and a third region.
- a logic well and a high voltage well are respectively formed in the second region and the third region.
- a first device structure and a second device structure are formed on the first region, a third device structure is formed to cover the logic well, and a fourth device structure is formed to cover the high voltage well.
- Gap oxide layers are formed on sidewalls of the first device structure, the second device structure, the third device structure, and the fourth device structure. The fourth device structure and the gap oxide layers on the sidewalls of the fourth device structure are removed.
- a first gate oxide layer is formed to cover the substrate.
- the gap oxide layers on the sidewall of the first device structure adjacent to the second device structure, the sidewall of the second device structure adjacent to the first device structure, and the sidewalls of the third device structure are removed.
- a source line junction is formed in the substrate between the first device structure and the second device structure.
- the third device structure is removed.
- a second gate oxide layer is formed on the substrate and the first gate oxide layer. Portions of the second gate oxide layer and portions of the first gate oxide layer on the first region and the second region are removed.
- a third gate oxide layer is formed to cover the first region, the second region, and the third region.
- a first word line and a second word line are respectively formed on the gap oxide layer on the first device structure and the gap oxide layer on the second device structure.
- the present disclosure discloses a method for manufacturing a semiconductor device.
- various isolation structures are formed in a substrate to at least define a first region, a second region, and a third region.
- a logic well and a high voltage well are respectively formed in the second region and the third region.
- a first device structure and a second device structure are formed on the first region, a third device structure is formed to cover the logic well, and a fourth device structure is formed to cover the high voltage well.
- a trap storage structure is formed on the substrate, a control gate is directly formed on the trap storage structure, a cap structure is formed on the control gate to form a stacked structure, and various spacers are respectively formed on sidewalls of the stacked structure.
- a first word line Vt, a source side junction, and a second word line Vt are formed in the first region, in which the first word line Vt and the second word line Vt are respectively adjacent to the first device structure and the second device structure, and the source side junction is located between the first device structure and the second device structure, and is opposite to the first word line Vt and the second word line Vt respectively.
- gap oxide layers are formed on sidewalls of the first device structure, the second device structure, the third device structure, and the fourth device structure.
- the fourth device structure and the gap oxide layers on the sidewalls of the fourth device structure are removed.
- a first gate oxide layer is formed to cover the substrate.
- the gap oxide layers on the sidewall of the first device structure adjacent to the second device structure, the sidewall of the second device structure adjacent to the first device structure, and the sidewalls of the third device structure are removed.
- a source line junction is formed in the substrate between the first device structure and the second device structure.
- the third device structure is removed.
- a second gate oxide layer is formed on the substrate and the first gate oxide layer. Portions of the second gate oxide layer and portions of the first gate oxide layer on the first region and the second region are removed.
- a third gate oxide layer is formed to cover the first region, the second region, and the third region
- a first word line is formed on the gap oxide layer on the first device structure
- a second word line is formed on the gap oxide layer on the second device structure
- a gate of a high voltage device is formed on the high voltage well
- a gate of a logic device is formed on the logic well.
Abstract
In a method for manufacturing a semiconductor device, a logic well and a high voltage well are respectively formed in second and third regions of a substrate. A first device structure and a second device structure are formed on a first region of the substrate, third and fourth device structures are respectively formed on the logic well and the high voltage well. A first word line Vt, a source side junction, and a second word line Vt are formed adjacent to the first device structure, between the first device structure and the second device structure, and adjacent to the second device structure. The fourth device structure is removed. A source line junction is formed in the source side junction. The third device structure is removed. First word line and second word lines are respectively formed on the first word line Vt and the second word line Vt.
Description
- This application claims priority to U.S. Provisional Application Ser. No. 62/426,681, filed Nov. 28, 2016, which is herein incorporated by reference.
- The semiconductor integrated circuit (IC) industry has experienced exponential growth over the last few decades. In the course of IC evolution, functional density (i.e., the number of interconnected devices per chip area) has generally increased while geometry size (i.e., the smallest component (or line) that can be created using a fabrication process) has decreased.
- Super-flash technology has enabled designers to create cost effective and high performance programmable SOC (system on chip) solutions through the use of split-gate flash memory cells. The aggressive scaling of the third generation embedded super-flash (ESF3) memory enables designing flash memories with very high memory array density.
- Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It is noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
-
FIG. 1A throughFIG. 1O are schematic cross-sectional views of intermediate stages showing a method for manufacturing a semiconductor device in accordance with various embodiments. -
FIG. 2 is a flow chart of a method for manufacturing a semiconductor device in accordance with various embodiments. - The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact.
- Terms used herein are only used to describe the specific embodiments, which are not used to limit the claims appended herewith. For example, unless limited otherwise, the term “one” or “the” of the single form may also represent the plural form. The terms such as “first” and “second” are used for describing various devices, areas and layers, etc., though such terms are only used for distinguishing one device, one area or one layer from another device, another area or another layer. Therefore, the first area can also be referred to as the second area without departing from the spirit of the claimed subject matter, and the others are deduced by analogy. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.
- In a typical process for manufacturing a 1.5 T ESF3 memory, the 1.5 T ESF3 memory is formed with a polysilicon storage by using a logic first process, i.e. a logic well is formed before a non-volatile memory (NVM) process. The logic well is impacted by the subsequent non-volatile memory process, and resulting in a logic device shift. In another process for manufacturing a 1.5 T ESF3 memory, the 1.5 T ESF3 memory is formed by using a logic last process, i.e. a logic well is formed after a non-volatile memory process, such that the shift of the logic device is decreased. However, in the logic last process, an implantation operation of a low voltage well of a low voltage device is performed through a gate oxide layer of a high voltage device, such that an implant profile of the low voltage well is affected, and resulting in the low voltage device shift. Moreover, the applying of the polysilicon storage induces a triple polysilicon process, and thus increasing complex of the process of manufacturing the 1.5 T ESF3 memory.
- Embodiments of the present disclosure are directed to providing a method for manufacturing the semiconductor device, in which after a logic well of a logic device and a high voltage well of a high voltage device are formed, dummy structures are formed to cover the logic well and the high voltage well as device structures are formed, such that the logic well and the high voltage well can be prevented by the dummy structures during subsequent high temperature processes, thereby greatly decreasing shift of the logic device and the high voltage device. Furthermore, an oxide/nitride/oxide (ONO) structure is formed as a trap storage structure of each of device structures, the ONO trap storage structure is thinner than a polysilicon floating gate of a conventional memory, and a control gate of the device structure can be directly disposed on the ONO trap storage structure, such that the thickness of the device structure is reduced. In addition, with the ONO trap storage structure, a triple polysilicon process can be omitted. Thus, compared to the device structure of the conventional memory, each of the device structures has a lower structure topology which is close to that of a logic gate, such that the subsequent patterning processes of the semiconductor device are relatively easy, thereby simplifying a process for manufacturing the semiconductor device and integration of the processes of the semiconductor device and other device, and decreasing process time and reducing process cost.
-
FIG. 1A throughFIG. 1O are schematic cross-sectional views of intermediate stages showing a method for manufacturing a semiconductor device in accordance with various embodiments. As shown inFIG. 1A , asubstrate 100 is provided. Thesubstrate 100 may be a semiconductor substrate. Thesubstrate 100 may be composed of a single-crystalline semiconductor material or a compound semiconductor material. For example, silicon or germanium may be used as a material forming thesubstrate 100. In certain examples, thesubstrate 100 may be a silicon on insulator substrate. - Referring to
FIG. 1A again, various isolation structures 102 a-102 d are formed in thesubstrate 100. In some examples, in the formation of the isolation structures 102 a-102 d, a hard mask (not shown) is formed to cover thesubstrate 100, the hard mask is then patterned by a photolithography process and an etch process, and portions of thesubstrate 100, which are not covered by the patterned hard mask, are removed to form various trenches in thesubstrate 100, an isolation material is formed to fill the trenches and to cover the hard mask layer, and then the hard mask and the isolation material over the hard mask layer are removed to form the isolation structures 102 a-102 d in thesubstrate 100. The isolation structures 102 a-102 d formed in thesubstrate 100 at least define afirst region 104 a, asecond region 104 b, and athird region 104 c, in which thefirst region 104 a is located between theisolation structures second region 104 b is located between theisolation structures third region 104 c is located between theisolation structures isolation structures - After the isolation structures 102 a-102 d are completed, a
pad oxide layer 106 is blanketly formed to cover thesubstrate 100 by a deposition method or a thermal oxidization method. In some examples, alogic well 108 is formed in thesubstrate 100 in thesecond region 104 b by performing an implantation process on thesecond region 104 b. Then, ahigh voltage well 110 is formed in thesubstrate 100 in thethird region 104 c by performing an implantation process on thethird region 104 c. The logic well 108 and thehigh voltage well 110 are formed using dopants, such as boron and phosphorous. After the logic well 108 and thehigh voltage well 110 are completed, the portion of thepad oxide layer 106 in thefirst region 104 a is removed by using a photolithography method and an etching method. The remaining portions of thepad oxide layer 106 cover thesecond region 104 b and thethird region 104 c, as shown inFIG. 1A . - As shown in
FIG. 1B , anoxide layer 112, anitride layer 114, and anoxide layer 116 are formed to cover thesubstrate 100 in sequence to form an ONO structure. Theoxide layer 112, thenitride layer 114, and theoxide layer 116 may be formed by using a deposition method, such as a chemical vapor deposition (CVD) method. Theoxide layers nitride layer 114 may be formed from silicon nitride. In some exemplary examples, theoxide layer 112 is formed to have a thickness ranging from about 10 angstrom to about 20 angstrom, thenitride layer 114 is formed to have a thickness ranging from about 100 angstrom to about 150 angstrom, and theoxide layer 116 is formed to have a thickness ranging from about 30 angstrom to about 50 angstrom. Acontrol gate layer 118 is formed to cover theoxide layer 116 by using a deposition method, such as a chemical vapor deposition method. Thecontrol gate layer 118 may be formed from polysilicon. In some exemplary examples, thecontrol gate layer 118 is directly deposed on theoxide layer 116. - In some examples, referring to
FIG. 1B again, anitride layer 120, anoxide layer 122, and anitride layer 124 are formed to cover thecontrol gate layer 118 in sequence to form an NON structure. Thenitride layer 120, theoxide layer 122, and thenitride layer 124 form a cap structure. Thenitride layer 120, theoxide layer 122, and thenitride layer 124 may be formed by using a deposition method, such as a chemical vapor deposition method. The nitride layers 120 and 124 may be formed from silicon nitride, and theoxide layer 122 may be formed from silicon oxide. - As shown in
FIG. 1C , a portion of thenitride layer 124, a portion of theoxide layer 122, a portion of thenitride layer 120, and a portion of thecontrol gate layer 118 are removed by using a photolithography method and an etching method. The remaining portions of thecontrol gate layer 118 disposed on thefirst region 104 aform control gates 118 a and 118 b respectively, and the remaining portions of thecontrol gate layer 118 disposed on thesecond region 104 b and thethird region 104 cform control gates portion 120 a of thenitride layer 120, the remaining portion 122 a of theoxide layer 122, and the remainingportion 124 a of thenitride layer 124 are stacked on the control gate 118 a to form astacked structure 126 a with the control gate 118 a. The remainingportion 120 b of thenitride layer 120, the remainingportion 122 b of theoxide layer 122, and the remainingportion 124 b of thenitride layer 124 are stacked on thecontrol gate 118 b to form astacked structure 126 b with thecontrol gate 118 b. The remainingportion 120 c of thenitride layer 120, the remainingportion 122 c of theoxide layer 122, and the remainingportion 124 c of thenitride layer 124 are stacked on thecontrol gate 118 c to form astacked structure 126 c with thecontrol gate 118 c. The remainingportion 120 d of thenitride layer 120, the remainingportion 122 d of theoxide layer 122, and the remainingportion 124 d of thenitride layer 124 are stacked on thecontrol gate 118 d to form astacked structure 126 d with thecontrol gate 118 d. - As shown in
FIG. 1D , spacers 128 a-128 d are respectively formed on sidewalls of the stacked structures 126 a-126 d to complete device structures 130 a-130 d, in which thedevice structures first region 104 a, thedevice structure 130 c is located on thesecond region 104 b and covers the logic well 108, and thedevice structure 130 d is located on thesecond region 104 c and covers thehigh voltage well 110. The device structure 130 a-130 d are separated from each other. In some examples, each of the spacers 128 a-128 d is formed to include anoxide layer 132, anitride layer 134, and anoxide layer 136 stacked on the sidewall of the respectivestacked structure oxide layer 132, thenitride layer 134, and theoxide layer 136 in sequence to cover the stacked structures 126 a-126 d and theoxide layer 116, and etching theoxide layer 132, thenitride layer 134, and theoxide layer 136 to remove a portion of theoxide layer 132, a portion of thenitride layer 134, and a portion of theoxide layer 136, so as to form the spacers 128 a-128 d on the sidewalls of the stacked structure 126 a-126 d respectively. Theoxide layer 132, thenitride layer 134, and theoxide layer 136 may be formed by a deposition method, such as a chemical vapor deposition method. Etching theoxide layer 132, thenitride layer 134, and theoxide layer 136 may be performed by using an anisotropic etching method. - Referring to
FIG. 1D again, etching theoxide layer 132, thenitride layer 134, and theoxide layer 136 includes etching theoxide layer 116 and thenitride layer 114. Theportion 112 a of theoxide layer 112, the remainingportion 114 a of thenitride layer 114, and the remainingportion 116 a of theoxide layer 116 stacked in sequence form atrap storage structure 138 a. Theportion 112 b of theoxide layer 112, the remainingportion 114 b of thenitride layer 114, and the remainingportion 116 b of theoxide layer 116 stacked in sequence form atrap storage structure 138 b. Theportion 112 c of theoxide layer 112, the remainingportion 114 c of thenitride layer 114, and the remainingportion 116 c of theoxide layer 116 stacked in sequence form atrap storage structure 138 c. Theportion 112 d of theoxide layer 112, the remainingportion 114 d of thenitride layer 114, and the remainingportion 116 d of theoxide layer 116 stacked in sequence form atrap storage structure 138 d. The device structures 130 a-130 d further respectively include the trap storage structures 138 a-138 d. In addition, each of thedevice structures pad oxide layer 106. Thedevice structures - In some examples, as shown in
FIG. 1E , after the device structures 130 a-130 d are completed, animplantation process 140 may be performed on thesubstrate 100 through theoxide layer 112 by using the device structures 130 a-130 d as mask structures, so as to form a word line threshold voltage (Vt) 142, asource side junction 144, and aword line Vt 146 in thefirst region 104 a. Theword line Vt 142 and theword line Vt 146 are respectively adjacent to thedevice structures source side junction 144 is located between thedevice structure source side junction 144 is opposite to theword line Vt 142 and theword line Vt 146 respectively. Theimplantation process 140 may be performed using dopants, such as boron and phosphorous. - In some examples, as shown in
FIG. 1F , gap oxide layers 148 a and 148 b are formed on sidewalls of thespacers 128 a respectively, gap oxide layers 150 a and 150 b are formed on sidewalls of thespacers 128 b respectively, gap oxide layers 152 are formed on sidewalls of thespacers 128 c respectively, and gap oxide layers 154 are formed on sidewalls of thespacers 128 d respectively. Thegap oxide layer source side junction 144. In some exemplary examples, forming the gap oxide layers 148 a, 148 b, 150 a, 150 b, 152, and 154 includes forming an oxide layer to cover the device structures 130 a-130 d and theoxide layer 112 on thesubstrate 100, and etching the oxide layer to remove a portion of the oxide layer to form the gap oxide layers 148 a, 148 b, 150 a, 150 b, 152, and 154. The oxide layer may be formed from silicon oxide, and the oxide layer may be formed by a high temperature oxidation (HTO) method. Etching the oxide layer may be performed by an anisotropic etching method. Optionally, in the formation of the gap oxide layers 148 a, 148 b, 150 a, 150 b, 152, and 154, a rapid thermal annealing (RTA) process may be performed on the oxide layer between forming the oxide layer and etching the oxide layer. - In some examples, the
device structure 130 d and the gap oxide layers 154 are removed, as shown inFIG. 1G . In some exemplary examples, referring toFIG. 1F , the gap oxide layers 154 may be firstly removed. Thenitride layer 124 d, theoxide layer 122 d, and thenitride layer 120 d are removed by an etching method. Thecontrol gate 118 d, theoxide layer 116, thenitride layer 114 are removed sequentially by an etching method. Then, theoxide layer 112 and thepad oxide layer 106 are removed by a photolithography method, and an etching method or a dip method. - In some examples, after the
device structure 130 d and the gap oxide layers 154 are removed, a firstgate oxide layer 156 is formed to cover thesubstrate 100. The firstgate oxide layer 156 may be formed to further cover the device structures 130 a-130 c. In some exemplary examples, the firstgate oxide layer 156 may be formed to include a rapid thermal oxide (RTO) layer and a high temperature oxide layer on the rapid thermal oxide layer. - In some examples, as shown in
FIG. 1H , the gap oxide layers 148 b and 150 b, located on thesource side junction 144, and the gap oxide layers 152 located on the sidewalls of thedevice structure 130 c are removed. The gap oxide layers 148 b, 150 b and 152 may be removed by using a photolithography method and an etching method. Asource line junction 158 is formed in thesource side junction 144 by performing an implantation process on thesource side junction 144. After thesource line junction 158 is completed, the firstgate oxide layer 156 on thesource line junction 158 is removed by an etching method, as shown inFIG. 1H . A rapid thermal annealing process may be optionally performed on the firstgate oxide layer 156 and thesource line junction 158. - As shown in
FIG. 1I , thedevice structure 130 c and the firstgate oxide layer 156 overlying thedevice structure 130 c are removed. In some exemplary examples, referring toFIG. 1H , the firstgate oxide layer 156 overlying thedevice structure 130 c is removed by a dip method. Next, thenitride layer 124 c, theoxide layer 122 c, and thenitride layer 120 c are removed by an etching method, then thecontrol gate 118 c, theoxide layer 116, thenitride layer 114 are removed sequentially by an etching method, and then theoxide layer 112 and thepad oxide layer 106 are removed by a photolithography method, and an etching method or a dip method. - In some examples, as shown in
FIG. 1I , a secondgate oxide layer 160 may be formed on thesubstrate 100 and the firstgate oxide layer 156. Thesecond oxide layer 160 may be referred to an IO oxide layer. In some exemplary examples, an operation of forming the secondgate oxide layer 160 is performed by a logic dual gate oxide process, and a rapid thermal oxide layer of the secondgate oxide layer 160 is firstly formed, and then a high temperature oxide layer of the secondgate oxide layer 160 is formed on the rapid thermal oxide layer. A rapid thermal annealing process may be optionally performed on the secondgate oxide layer 160. - In some examples, as shown in
FIG. 1J , portions of the secondgate oxide layer 160 and portions of the firstgate oxide layer 156 on thefirst region 104 a, thesecond region 104 b, and a portion of theisolation structure 102 c are removed by, for example, a photolithography method, and an etching method or a dip method. Then, referring toFIG. 1J again, a thirdgate oxide layer 161 is formed to cover thefirst region 104 a, thesecond region 104 b, and thethird region 104 c. The thirdgate oxide layer 161 may be referred to a core oxide layer. In some exemplary examples, after removing the portions of the secondgate oxide layer 160 and the portions of the firstgate oxide layer 156, theword line Vt 142, theword line Vt 146, thedevice structures source line junction 158, the logic well 108, theisolation structure 102 b, and the portion of theisolation structure 102 c are exposed. Thus, the thirdgate oxide layer 161 is formed to cover the remaining portions of the secondgate oxide layer 160, theword line Vt 142, theword line Vt 146, thedevice structures source line junction 158, the logic well 108, theisolation structure 102 b, and the portion of theisolation structure 102 c. In certain examples, thesecond region 104 b has the secondgate oxide layer 160 and the thirdgate oxide layer 161 sequentially covering thereon. The device including the secondgate oxide layer 160 may be referred to a medium voltage (MV) device. - As shown in
FIG. 1K , aconductive layer 162 is formed to cover the thirdgate oxide layer 161, thedevice structures conductive layer 162 may be formed from polysilicon, and may be formed by using a deposition method, such as a chemical vapor deposition method. - As shown in
FIG. 1L , a portion of theconductive layer 162 over thedevice structures spacers conductive layer 162, portions of the nitride layers 124 a and 124 b, portions of thespacers - As shown in
FIG. 1M , theconductive layer 162 is further etched to formword lines word line 164 is disposed on the thirdgate oxide layer 161 over theword line Vt 142 and on one of thespacers 128 a of thedevice structure 130 a, in which thegap oxide layer 148 a is located between theword line 164 and thespacer 128 a; and theword line 166 is disposed on the thirdgate oxide layer 161 over theword line Vt 146 and on one of thespacers 128 b of thedevice structure 130 b, in which thegap oxide layer 150 a is located between theword line 166 and thespacer 128 b. The word lines 164 and 166 are respectively adjacent to thedevice structures gate 168 of thelogic device 170 on the logic well 108 and agate 172 of thehigh voltage device 174 on thehigh voltage well 110. Thelogic device 170 mainly includes thegate 168 and the thirdgate oxide layer 161, and thehigh voltage device 174 mainly includes thegate 172, the firstgate oxide layer 156, the secondgate oxide layer 160, and the thirdgate oxide layer 161. - As shown in
FIG. 1E , during theimplantation process 140, thedevice structures implantation process 140. Furthermore, as shown inFIG. 1F , the logic well 108 and the high voltage well 110 can be prevented by thedevice structures FIG. 1G , thedevice structures 130 c can further block the logic well 108 from rapid thermal annealing process of the firstgate oxide layer 156. Therefore, with thedevice structures logic device 170 and thehigh voltage device 174. - Referring to
FIG. 1M again, in some examples, after the word lines 164 and 166, thegates substrate 100 by using an implantation method. The lightly dopeddrains gate 168 and adjacent to thegate 168, the lightly dopeddrain 176 c is formed in theword line Vt 142 adjacent theword line 164, the lightly dopeddrain 176 d is formed in theword line Vt 146 adjacent theword line 166, the lightly dopeddrains gate 172 and adjacent to thegate 172, and the lightly dopeddrain 176 g is formed in thesource line junction 158. - Referring to
FIG. 1N , in some examples, various spacers 178 a-178 h are formed on the thirdgate oxide layer 161. Thespacers gate 168, thespacer 178 c is formed on a sidewall of theword line 164, thespacer 178 d is formed on a sidewall of thedevice structure 130 a and over the lightly dopeddrain 176 g, thespacer 178 e is formed on a sidewall of thedevice structure 130 b and over the lightly dopeddrain 176 g, thespacer 178 f is formed on a sidewall of theword line 166, and thespacers gate 172. In some exemplary examples, an operation of forming the spacers 178 a-178 h includes blanketly forming a spacer material layer (not shown) to cover the thirdgate oxide layer 161, thegates device structures gate oxide layer 161, a portion of the secondgate oxide layer 160, and a portion of the firstgate oxide layer 156, so as to form the spacers 178 a-178 h. - Referring to
FIG. 1N again, after the spacers 178 a-178 h are completed, a source/drain (S/D) implantation process is performed on thesubstrate 100 to form S/D regions 180 a-180 g in thesubstrate 100. The S/D regions 180 a-180 g are respectively formed in the lightly doped drains 176 a-176 g. - Referring to
FIG. 1O , in some examples, a silicide process is performed on the S/D regions 180 a-180 g and the word lines 164 and 166, to form various silicide regions 182 a-182 g, so as to substantially complete asemiconductor device 184. The silicide regions 182 a-182 k are respectively formed in the S/D regions 180 a-180 g, thegate 168, theword line 164, theword line 166, and thegate 172. Thesemiconductor device 184 may be a 1.5 T third generation embedded super-flash (ESF3) with an ONO trap storage structure. - As shown in
FIG. 1C andFIG. 1D , thetrap storage structures trap storage structures control gates 118 a and 118 b can be directly stacked on thetrap storage structures device structures semiconductor device 184 are relatively easy, thereby simplifying a process for manufacturing thesemiconductor device 184 and integration of the processes of thesemiconductor device 184 and the other devices, and decreasing process time and reducing process cost. - In addition, by using the ONO structure as the
trap storage structure semiconductor device 184 can be programmed using a source side injection (SSI) programming method, and can be erased using a Fowler-Nordheim (FN) erase method, thereby decreasing power consumption of thesemiconductor device 184. Furthermore, because thesemiconductor device 184 can be programmed by a SSI programming method, the programming operation of thesemiconductor device 184 can be performed by a byte mode. - Referring to
FIG. 2 withFIG. 1A throughFIG. 1O ,FIG. 2 is a flow chart of a method for manufacturing a semiconductor device in accordance with various embodiments. The method begins atoperation 200, where asubstrate 100 is provided. Thesubstrate 100 may be a semiconductor substrate, such as a crystalline semiconductor substrate or a compound semiconductor substrate. For example, silicon or germanium may be used as a material forming thesubstrate 100. In certain examples, thesubstrate 100 may be a silicon on insulator substrate. - Then, as shown in
FIG. 1A , various isolation structures 102 a-102 d are formed in thesubstrate 100 to at least define afirst region 104 a, asecond region 104 b, and athird region 104 c, in which thefirst region 104 a is located between theisolation structures second region 104 b is located between theisolation structures third region 104 c is located between theisolation structures substrate 100, the hard mask is then patterned by a photolithography process and an etch process, and portions of thesubstrate 100, which are not covered by the patterned hard mask, are removed to form various trenches in thesubstrate 100, an isolation material is formed to fill the trenches and to cover the hard mask layer, and then the hard mask and the isolation material over the hard mask layer are removed to form the isolation structures 102 a-102 d in thesubstrate 100. The isolation structures 102 a-102 d may be shallow trench isolation structures. The isolation material may be formed by using a high density plasma chemical vapor deposition method. - A
pad oxide layer 106 is blanketly formed to cover thesubstrate 100 by a deposition method or a thermal oxidization method. Atoperation 202, referring toFIG. 1A again, alogic well 108 is formed in thesubstrate 100 in thesecond region 104 b by performing an implantation process on thesecond region 104 b. Atoperation 204, ahigh voltage well 110 is formed in thesubstrate 100 in thethird region 104 c by performing an implantation process on thethird region 104 c. The logic well 108 and the high voltage well 110 are formed using dopants, such as boron and phosphorous. Then, the portion of thepad oxide layer 106 in thefirst region 104 a is removed by using a photolithography method and an etching method. The remaining portions of thepad oxide layer 106 cover thesecond region 104 b and thethird region 104 c. - At
operation 206, as shown inFIG. 1D ,device structures first region 104 a, adevice structure 130 c is formed on thesecond region 104 b and covering the logic well 108, and adevice structure 130 d is formed on thethird region 104 c and covering thehigh voltage well 110. In some examples, as shown inFIG. 1B , in the forming of the device structures 130 a-130 d, anoxide layer 112, anitride layer 114, and anoxide layer 116 are formed to cover thesubstrate 100 in sequence to form an ONO structure. Theoxide layer 112, thenitride layer 114, and theoxide layer 116 may be formed by using a deposition method. Acontrol gate layer 118 is formed to cover theoxide layer 116 by using a deposition method. In some exemplary examples, thecontrol gate layer 118 is directly deposed on theoxide layer 116. Then, anitride layer 120, anoxide layer 122, and anitride layer 124 are formed to cover thecontrol gate layer 118 in sequence to form an NON structure. Thenitride layer 120, theoxide layer 122, and thenitride layer 124 may be formed by using a deposition method. - As shown in
FIG. 1C , a portion of thenitride layer 124, a portion of theoxide layer 122, a portion of thenitride layer 120, and a portion of thecontrol gate layer 118 are removed by using a photolithography method and an etching method. The remaining portions of thecontrol gate layer 118 disposed on thefirst region 104 aform control gates 118 a and 118 b respectively, and the remaining portions of thecontrol gate layer 118 disposed on thesecond region 104 b and thethird region 104 cform control gates portion 120 a of thenitride layer 120, the remaining portion 122 a of theoxide layer 122, and the remainingportion 124 a of thenitride layer 124 are stacked on the control gate 118 a to form astacked structure 126 a with the control gate 118 a. The remainingportion 120 b of thenitride layer 120, the remainingportion 122 b of theoxide layer 122, and the remainingportion 124 b of thenitride layer 124 are stacked on thecontrol gate 118 b to form astacked structure 126 b with thecontrol gate 118 b. The remainingportion 120 c of thenitride layer 120, the remainingportion 122 c of theoxide layer 122, and the remainingportion 124 c of thenitride layer 124 are stacked on thecontrol gate 118 c to form astacked structure 126 c with thecontrol gate 118 c. The remainingportion 120 d of thenitride layer 120, the remainingportion 122 d of theoxide layer 122, and the remainingportion 124 d of thenitride layer 124 are stacked on thecontrol gate 118 d to form astacked structure 126 d with thecontrol gate 118 d. - As shown in
FIG. 1D , spacers 128 a-128 d are respectively formed on sidewalls of the stacked structures 126 a-126 d to complete device structures 130 a-130 d, in which the device structures 130 a-130 d are separated from each other. In some examples, each of the spacers 128 a-128 d is formed to include anoxide layer 132, anitride layer 134, and anoxide layer 136 stacked on the sidewall of the respectivestacked structure oxide layer 132, thenitride layer 134, and theoxide layer 136 in sequence to cover the stacked structures 126 a-126 d and theoxide layer 116, and etching theoxide layer 132, thenitride layer 134, and theoxide layer 136 to remove a portion of theoxide layer 132, a portion of thenitride layer 134, and a portion of theoxide layer 136, so as to form the spacers 128 a-128 d on the sidewalls of the stacked structure 126 a-126 d respectively. Theoxide layer 132, thenitride layer 134, and theoxide layer 136 may be formed by a deposition method. Etching theoxide layer 132, thenitride layer 134, and theoxide layer 136 may be performed by using an anisotropic etching method. - Referring to
FIG. 1D again, etching theoxide layer 132, thenitride layer 134, and theoxide layer 136 includes etching theoxide layer 116 and thenitride layer 114. Theportion 112 a of theoxide layer 112, the remainingportion 114 a of thenitride layer 114, and the remainingportion 116 a of theoxide layer 116 stacked in sequence form atrap storage structure 138 a. Theportion 112 b of theoxide layer 112, the remainingportion 114 b of thenitride layer 114, and the remainingportion 116 b of theoxide layer 116 stacked in sequence form atrap storage structure 138 b. Theportion 112 c of theoxide layer 112, the remainingportion 114 c of thenitride layer 114, and the remainingportion 116 c of theoxide layer 116 stacked in sequence form atrap storage structure 138 c. Theportion 112 d of theoxide layer 112, the remainingportion 114 d of thenitride layer 114, and the remainingportion 116 d of theoxide layer 116 stacked in sequence form atrap storage structure 138 d. The device structures 130 a-130 d further respectively include the trap storage structures 138 a-138 d. In addition, each of thedevice structures pad oxide layer 106. - At
operation 208, as shown inFIG. 1E , animplantation process 140 may be performed on thesubstrate 100 through theoxide layer 112 by using the device structures 130 a-130 d as mask structures, so as to form aword line Vt 142, asource side junction 144, and aword line Vt 146 in thefirst region 104 a. Theword line Vt 142 and theword line Vt 146 are respectively adjacent to thedevice structures source side junction 144 is located between thedevice structure source side junction 144 is opposite to theword line Vt 142 and theword line Vt 146 respectively. - Optionally, as shown in
FIG. 1F , gap oxide layers 148 a and 148 b may be formed on sidewalls of thespacers 128 a respectively, gap oxide layers 150 a and 150 b may be formed on sidewalls of thespacers 128 b respectively, gap oxide layers 152 may be formed on sidewalls of thespacers 128 c respectively, and gap oxide layers 154 may be formed on sidewalls of thespacers 128 d respectively. Thegap oxide layer source side junction 144. In some exemplary examples, forming the gap oxide layers 148 a, 148 b, 150 a, 150 b, 152, and 154 includes forming an oxide layer to cover the device structures 130 a-130 d and theoxide layer 112 on thesubstrate 100, and etching the oxide layer to remove a portion of the oxide layer to form the gap oxide layers 148 a, 148 b, 150 a, 150 b, 152, and 154. The oxide layer may be formed by a high temperature oxidation method. Etching the oxide layer may be performed by an anisotropic etching method. Optionally, in the formation of the gap oxide layers 148 a, 148 b, 150 a, 150 b, 152, and 154, a rapid thermal annealing process may be performed on the oxide layer between forming the oxide layer and etching the oxide layer. - At
operation 210, as shown inFIG. 1G , thedevice structure 130 d and the gap oxide layers 154 are removed. Referring toFIG. 1F , the gap oxide layers 154 may be firstly removed. Thenitride layer 124 d, theoxide layer 122 d, and thenitride layer 120 d are removed by an etching method. Next, thecontrol gate 118 d, theoxide layer 116, thenitride layer 114 are removed sequentially by an etching method. Then, theoxide layer 112 and thepad oxide layer 106 are removed by a photolithography method, and an etching method or a dip method. In some exemplary examples, after thedevice structure 130 d and the gap oxide layers 154 are removed, a firstgate oxide layer 156 is formed to cover thesubstrate 100. The firstgate oxide layer 156 may be formed to further cover the device structures 130 a-130 c. - At
operation 212, as shown inFIG. 1H , asource line junction 158 is formed in thesource side junction 144. In some examples, the gap oxide layers 148 b and 150 b located on thesource side junction 144, and the gap oxide layers 152 located on the sidewalls of thedevice structure 130 c are removed by using a photolithography method and an etching method. Then, thesource line junction 158 is formed in thesource side junction 144 by performing an implantation process on thesource side junction 144. After thesource line junction 158 is completed, the firstgate oxide layer 156 on thesource line junction 158 is removed by an etching method. A rapid thermal annealing process may be optionally performed on the firstgate oxide layer 156 andsource line junction 158. - At
operation 214, as shown inFIG. 1I , thedevice structure 130 c and the firstgate oxide layer 156 overlying thedevice structure 130 c are removed. Referring toFIG. 1H , the firstgate oxide layer 156 overlying thedevice structure 130 c is removed by a dip method. Next, thenitride layer 124 c, theoxide layer 122 c, and thenitride layer 120 c are removed by an etching method. Thecontrol gate 118 c, theoxide layer 116, thenitride layer 114 are removed sequentially by an etching method. Then, theoxide layer 112 and thepad oxide layer 106 are removed by a photolithography method, and an etching method or a dip method. - In some examples, as shown in
FIG. 1I , a secondgate oxide layer 160 may be formed on thesubstrate 100 and the firstgate oxide layer 156. In some exemplary examples, an operation of forming the secondgate oxide layer 160 is performed by a logic dual gate oxide process, and a rapid thermal oxide layer of the secondgate oxide layer 160 is firstly formed, and then a high temperature oxide layer of the secondgate oxide layer 160 is formed on the rapid thermal oxide layer. A rapid thermal annealing process may be optionally performed on the secondgate oxide layer 160. - In some examples, as shown in
FIG. 1J , portions of the secondgate oxide layer 160 and the firstgate oxide layer 156 on thefirst region 104 a, thesecond region 104 b, and a portion of theisolation structure 102 c are removed by, for example, a photolithography method, and an etching method or a dip method. After removing the portions of the secondgate oxide layer 160 and the portions of the firstgate oxide layer 156, theword line Vt 142, theword line Vt 146, thedevice structures source line junction 158, the logic well 108, theisolation structure 102 b, and the portion of theisolation structure 102 c are exposed. Then, referring toFIG. 1J again, a thirdgate oxide layer 161 is formed to cover the remaining portions of the secondgate oxide layer 160, theword line Vt 142, theword line Vt 146, thedevice structures source line junction 158, the logic well 108, theisolation structure 102 b, and the portion of theisolation structure 102 c. In certain examples, thesecond region 104 b has the secondgate oxide layer 160 and the thirdgate oxide layer 161 sequentially covering thereon. - At
operation 216, as shown inFIG. 1M ,word lines conductive layer 162 is formed to cover the thirdgate oxide layer 161, thedevice structures FIG. 1K . Theconductive layer 162 may be formed by using a deposition method. As shown inFIG. 1L , a portion of theconductive layer 162 over thedevice structures spacers conductive layer 162, portions of the nitride layers 124 a and 124 b, portions of thespacers - Referring to
FIG. 1M again, theconductive layer 162 is further etched to form the word lines 164 and 166. In some examples, theword line 164 is disposed on the thirdgate oxide layer 161 over theword line Vt 142 and on one of thespacers 128 a of thedevice structure 130 a, in which thegap oxide layer 148 a is located between theword line 164 and thespacer 128 a. Theword line 166 is disposed on the thirdgate oxide layer 161 over theword line Vt 146 and on one of thespacers 128 b of thedevice structure 130 b, in which thegap oxide layer 150 a is located between theword line 166 and thespacer 128 b. The word lines 164 and 166 are respectively adjacent to thedevice structures gate 168 of thelogic device 170 on the logic well 108 and agate 172 of thehigh voltage device 174 on thehigh voltage well 110. Thelogic device 170 mainly includes thegate 168 and the thirdgate oxide layer 161, and thehigh voltage device 174 mainly includes thegate 172, the firstgate oxide layer 156, the secondgate oxide layer 160, and the thirdgate oxide layer 161. - Various lightly doped drains 176 a-176 g may be optionally formed in the
substrate 100 by using an implantation method. The lightly dopeddrains gate 168 and adjacent to thegate 168, the lightly dopeddrain 176 c is formed in theword line Vt 142 adjacent theword line 164, the lightly dopeddrain 176 d is formed in theword line Vt 146 adjacent theword line 166, the lightly dopeddrains gate 172 and adjacent to thegate 172, and the lightly dopeddrain 176 g is formed in thesource line junction 158. - Referring to
FIG. 1N , various spacers 178 a-178 h are formed on the thirdgate oxide layer 161. Thespacers gate 168, thespacer 178 c is formed on a sidewall of theword line 164, thespacer 178 d is formed on a sidewall of thedevice structure 130 a and over the lightly dopeddrain 176 g, thespacer 178 e is formed on a sidewall of thedevice structure 130 b and over the lightly dopeddrain 176 g, thespacer 178 f is formed on a sidewall of theword line 166, and thespacers gate 172. In some exemplary examples, an operation of forming the spacers 178 a-178 h includes blanketly forming a spacer material layer to cover the thirdgate oxide layer 161, thegates device structures gate oxide layer 161, a portion of the secondgate oxide layer 160, and a portion of the firstgate oxide layer 156. - Referring to
FIG. 1N again, after the spacers 178 a-178 h are completed, a S/D implantation process is performed on thesubstrate 100 to form S/D regions 180 a-180 g in thesubstrate 100. The S/D regions 180 a-180 g are respectively formed in the lightly doped drains 176 a-176 g. Referring toFIG. 1O , a silicide process is performed on the S/D regions 180 a-180 g and the word lines 164 and 166, to form various silicide regions 182 a-182 k, so as to substantially complete asemiconductor device 184. The silicide regions 182 a-182 k are respectively formed in the S/D regions 180 a-180 g, thegate 168, theword line 164, theword line 166, and thegate 172. - In accordance with an embodiment, the present disclosure discloses a method for manufacturing a semiconductor device. In this method, various isolation structures are formed in a substrate to at least define a first region, a second region, and a third region. A logic well and a high voltage well are respectively formed in the second region and the third region. A first device structure and a second device structure are formed on the first region, a third device structure is formed to cover the logic well, and a fourth device structure is formed to cover the high voltage well. A first word line Vt, a source side junction, and a second word line Vt are formed in the first region, in which the first word line Vt and the second word line Vt are respectively adjacent to the first device structure and the second device structure, and the source side junction is located between the first device structure and the second device structure, and is opposite to the first word line Vt and the second word line Vt respectively. The fourth device structure is removed. A source line junction is formed in the source side junction. The third device structure is removed. A first word line and a second word line are respectively formed on the first word line Vt adjacent to the first device structure and the second word line Vt adjacent to the second device structure.
- In accordance with another embodiment, the present disclosure discloses a method for manufacturing a semiconductor device. In this method, various isolation structures are formed in a substrate to at least define a first region, a second region, and a third region. A logic well and a high voltage well are respectively formed in the second region and the third region. A first device structure and a second device structure are formed on the first region, a third device structure is formed to cover the logic well, and a fourth device structure is formed to cover the high voltage well. Gap oxide layers are formed on sidewalls of the first device structure, the second device structure, the third device structure, and the fourth device structure. The fourth device structure and the gap oxide layers on the sidewalls of the fourth device structure are removed. A first gate oxide layer is formed to cover the substrate. The gap oxide layers on the sidewall of the first device structure adjacent to the second device structure, the sidewall of the second device structure adjacent to the first device structure, and the sidewalls of the third device structure are removed. A source line junction is formed in the substrate between the first device structure and the second device structure. The third device structure is removed. A second gate oxide layer is formed on the substrate and the first gate oxide layer. Portions of the second gate oxide layer and portions of the first gate oxide layer on the first region and the second region are removed. A third gate oxide layer is formed to cover the first region, the second region, and the third region. A first word line and a second word line are respectively formed on the gap oxide layer on the first device structure and the gap oxide layer on the second device structure.
- In accordance with yet another embodiment, the present disclosure discloses a method for manufacturing a semiconductor device. In this method, various isolation structures are formed in a substrate to at least define a first region, a second region, and a third region. A logic well and a high voltage well are respectively formed in the second region and the third region. A first device structure and a second device structure are formed on the first region, a third device structure is formed to cover the logic well, and a fourth device structure is formed to cover the high voltage well. In forming each of the first device structure, the second device structure, the third device structure, and the fourth device structure, a trap storage structure is formed on the substrate, a control gate is directly formed on the trap storage structure, a cap structure is formed on the control gate to form a stacked structure, and various spacers are respectively formed on sidewalls of the stacked structure. A first word line Vt, a source side junction, and a second word line Vt are formed in the first region, in which the first word line Vt and the second word line Vt are respectively adjacent to the first device structure and the second device structure, and the source side junction is located between the first device structure and the second device structure, and is opposite to the first word line Vt and the second word line Vt respectively. Various gap oxide layers are formed on sidewalls of the first device structure, the second device structure, the third device structure, and the fourth device structure. The fourth device structure and the gap oxide layers on the sidewalls of the fourth device structure are removed. A first gate oxide layer is formed to cover the substrate. The gap oxide layers on the sidewall of the first device structure adjacent to the second device structure, the sidewall of the second device structure adjacent to the first device structure, and the sidewalls of the third device structure are removed. A source line junction is formed in the substrate between the first device structure and the second device structure. The third device structure is removed. A second gate oxide layer is formed on the substrate and the first gate oxide layer. Portions of the second gate oxide layer and portions of the first gate oxide layer on the first region and the second region are removed. A third gate oxide layer is formed to cover the first region, the second region, and the third region A first word line is formed on the gap oxide layer on the first device structure, a second word line is formed on the gap oxide layer on the second device structure, a gate of a high voltage device is formed on the high voltage well, and a gate of a logic device is formed on the logic well.
- The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.
Claims (20)
1. A method for manufacturing a semiconductor device, the method comprising:
forming a plurality of isolation structures in a substrate to at least define a first region, a second region, and a third region;
forming a logic well and a high voltage well respectively in the second region and the third region;
forming a first device structure and a second device structure on the first region, a third device structure covering the logic well, and a fourth device structure covering the high voltage well;
forming a first implanted area, a source side junction, and a second implanted area in the first region, wherein the first implanted area and the second implanted area are respectively adjacent to the first device structure and the second device structure, and the source side junction is located between the first device structure and the second device structure, and is opposite to the first implanted area and the second implanted area respectively;
removing the fourth device structure;
forming a source line junction in the source side junction;
removing the third device structure; and
forming a first word line and a second word line respectively on the first implanted area adjacent to the first device structure and the second implanted area adjacent to the second device structure.
2. The method of claim 1 , wherein forming each of the first device structure, the second device structure, the third device structure, and the fourth device structure further comprise:
forming a trap storage structure on the substrate;
forming a control gate directly on the trap storage structure; and
forming a cap structure on the control gate to form a stacked structure.
3. The method of claim 2 , wherein forming the trap storage structure further comprises:
forming a first oxide layer on the substrate;
forming a nitride layer on the first oxide layer; and
forming a second oxide layer on the nitride layer.
4. The method of claim 2 , wherein forming the cap structure further comprises:
forming a first nitride layer on the control gate;
forming an oxide layer on the first nitride layer; and
forming a second nitride layer on the oxide layer.
5. The method of claim 2 , wherein forming each of the first device structure and the second device structure further comprises:
forming a plurality of spacers respectively on a plurality of sidewalls of the stacked structure.
6. The method of claim 5 , wherein forming each of the spacers further comprises:
forming a first oxide layer;
forming a nitride layer on the first oxide layer; and
forming a second oxide layer on the nitride layer.
7. The method of claim 1 ,
after forming the first implanted area, the source side junction, and the second implanted area, the method further comprising forming a plurality of gap oxide layers on sidewalls of the first device structure and the second device structure; and
between removing the fourth device structure and forming the source line, the method further comprising removing the gap oxide layers on the source side junction.
8. The method of claim 1 ,
between removing the fourth device structure and forming the source line junction, the method further comprising forming a first gate oxide layer to cover the substrate; and
between removing the third device structure and forming the first word line and the second word line, the method further comprising:
forming a second gate oxide layer on the substrate and the first gate oxide layer;
removing portions of the second gate oxide layer and portions of the first gate oxide layer on the first region and the second region to expose the first implanted area, the second implanted area, the first device structure, the second device structure, the source line junction, and the logic well; and
forming a third gate oxide layer on the second gate oxide layer, the first implanted area, the second implanted area, the first device structure, the second device structure, the source line junction, and the logic well.
9. The method of claim 1 , wherein forming the first word line and the second word line comprises forming a gate of a high voltage device on the third region and a gate of a logic device on the second region.
10. A method for manufacturing a semiconductor device, the method comprising:
forming a plurality of isolation structures in a substrate to at least define a first region, a second region, and a third region;
forming a logic well and a high voltage well respectively in the second region and the third region;
forming a first device structure and a second device structure on the first region, a third device structure covering the logic well, and a fourth device structure covering the high voltage well;
forming a plurality of gap oxide layers on sidewalls of the first device structure, the second device structure, the third device structure, and the fourth device structure;
removing the fourth device structure and the gap oxide layers on the sidewalls of the fourth device structure;
forming a first gate oxide layer to cover the substrate;
removing the gap oxide layers on the sidewall of the first device structure adjacent to the second device structure, the sidewall of the second device structure adjacent to the first device structure, and the sidewalls of the third device structure;
forming a source line junction in the substrate between the first device structure and the second device structure;
removing the third device structure;
forming a second gate oxide layer on the substrate and the first gate oxide layer;
removing portions of the second gate oxide layer and portions of the first gate oxide layer on the first region and the second region;
forming a third gate oxide layer to cover the first region, the second region, and the third region; and
forming a first word line and a second word line respectively on the gap oxide layer on the first device structure and the gap oxide layer on the second device structure.
11. The method of claim 10 , wherein forming each of the first device structure, the second device structure, the third device structure, and the fourth device structure further comprises:
forming a trap storage structure on the substrate;
forming a control gate directly on the trap storage structure; and
forming a cap structure on the control gate to form a stacked structure.
12. The method of claim 11 , wherein forming the trap storage structure further comprises:
forming a first oxide layer on the substrate;
forming a nitride layer on the first oxide layer; and
forming a second oxide layer on the nitride layer.
13. The method of claim 11 , wherein forming the cap structure further comprises:
forming a first nitride layer on the control gate;
forming an oxide layer on the first nitride layer; and
forming a second nitride layer on the oxide layer.
14. The method of claim 11 , wherein forming each of the first device structure and the second device structure further comprises:
forming a plurality of spacers respectively on a plurality of sidewalls of the stacked structure.
15. The method of claim 14 , wherein forming each of the spacers further comprises:
forming a first oxide layer;
forming a nitride layer on the first oxide layer; and
forming a second oxide layer on the nitride layer.
16. The method of claim 11 , between forming the first device structure, the second device structure, the third device structure, and the fourth device structure, and forming the gap oxide layers, the method further comprising:
forming a first implanted area, a source side junction, and a second implanted area in the first region, wherein the first implanted area and the second implanted area are respectively adjacent to the first device structure and the second device structure, and the source side junction is located between the first device structure and the second device structure, and is opposite to the first implanted area and the second implanted area respectively.
17. A method for manufacturing a semiconductor device, the method comprising:
forming a plurality of isolation structures in a substrate to at least define a first region, a second region, and a third region;
forming a logic well and a high voltage well respectively in the second region and the third region;
forming a first device structure and a second device structure on the first region, a third device structure covering the logic well, and a fourth device structure covering the high voltage well, wherein forming each of the first device structure, the second device structure, the third device structure, and the fourth device structure further comprises:
forming a trap storage structure on the substrate;
forming a control gate directly on the trap storage structure;
forming a cap structure on the control gate to form a stacked structure; and
forming a plurality of spacers respectively on a plurality of sidewalls of the stacked structure;
forming a first implanted area, a source side junction, and a second implanted area in the first region, wherein the first implanted area and the second implanted area are respectively adjacent to the first device structure and the second device structure, and the source side junction is located between the first device structure and the second device structure, and is opposite to the first implanted area and the second implanted area respectively;
forming a plurality of gap oxide layers on sidewalls of the first device structure, the second device structure, the third device structure, and the fourth device structure;
removing the fourth device structure and the gap oxide layers on the sidewalls of the fourth device structure;
forming a first gate oxide layer to cover the substrate;
removing the gap oxide layers on the sidewall of the first device structure adjacent to the second device structure, the sidewall of the second device structure adjacent to the first device structure, and the sidewalls of the third device structure;
forming a source line junction in the substrate between the first device structure and the second device structure;
removing the third device structure;
forming a second gate oxide layer on the substrate and the first gate oxide layer;
removing portions of the second gate oxide layer and portions of the first gate oxide layer on the first region and the second region;
forming a third gate oxide layer to cover the first region, the second region, and the third region; and
forming a first word line on the gap oxide layer on the first device structure, a second word line on the gap oxide layer on the second device structure, a gate of a high voltage device on the high voltage well, and a gate of a logic device on the logic well.
18. The method of claim 17 , wherein forming the trap storage structure further comprises:
forming a first oxide layer on the substrate;
forming a nitride layer on the first oxide layer; and
forming a second oxide layer on the nitride layer.
19. The method of claim 17 , wherein forming the cap structure further comprises:
forming a first nitride layer on the control gate;
forming an oxide layer on the first nitride layer; and
forming a second nitride on the oxide layer.
20. The method of claim 17 , wherein forming each of the spacers further comprises:
forming a first oxide layer;
forming a nitride layer on the first oxide layer; and
forming a second oxide layer on the nitride layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/396,886 US9997527B1 (en) | 2016-11-28 | 2017-01-03 | Method for manufacturing embedded non-volatile memory |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662426681P | 2016-11-28 | 2016-11-28 | |
US15/396,886 US9997527B1 (en) | 2016-11-28 | 2017-01-03 | Method for manufacturing embedded non-volatile memory |
Publications (2)
Publication Number | Publication Date |
---|---|
US20180151585A1 true US20180151585A1 (en) | 2018-05-31 |
US9997527B1 US9997527B1 (en) | 2018-06-12 |
Family
ID=62191082
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/396,886 Active US9997527B1 (en) | 2016-11-28 | 2017-01-03 | Method for manufacturing embedded non-volatile memory |
Country Status (1)
Country | Link |
---|---|
US (1) | US9997527B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210296330A1 (en) * | 2020-03-18 | 2021-09-23 | Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CHINA | Memory and Method for Forming the Same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9356158B2 (en) * | 2012-07-20 | 2016-05-31 | Semiconductor Components Industries, Llc | Electronic device including a tunnel structure |
KR20160018270A (en) * | 2014-08-08 | 2016-02-17 | 삼성전자주식회사 | Magnetic memory device |
-
2017
- 2017-01-03 US US15/396,886 patent/US9997527B1/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210296330A1 (en) * | 2020-03-18 | 2021-09-23 | Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CHINA | Memory and Method for Forming the Same |
US11600627B2 (en) * | 2020-03-18 | 2023-03-07 | Shanghai Huahong Grace Semiconductor Manufacturing Corporation | Memory and method for forming the same |
Also Published As
Publication number | Publication date |
---|---|
US9997527B1 (en) | 2018-06-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4659527B2 (en) | Manufacturing method of semiconductor device | |
TWI606583B (en) | Non-volatile memory device method | |
US10879251B2 (en) | Integrated circuit and manufacturing method thereof | |
US7238982B2 (en) | Split gate type flash memory device and method for manufacturing same | |
JP6385873B2 (en) | Semiconductor device and manufacturing method thereof | |
CN101783350A (en) | Flash memory device and manufacturing method the same | |
JP4834303B2 (en) | Manufacturing method of split gate type flash memory device | |
TWI606551B (en) | Non-volatile memory device method | |
KR100806787B1 (en) | Method of Manufacturing Flash Semiconductor Device | |
US7829412B2 (en) | Method of manufacturing flash memory device | |
JP2005209931A (en) | Nonvolatile semiconductor memory device and its manufacturing method | |
US9997527B1 (en) | Method for manufacturing embedded non-volatile memory | |
US10170488B1 (en) | Non-volatile memory of semiconductor device and method for manufacturing the same | |
US11024637B2 (en) | Embedded non-volatile memory | |
US10504913B2 (en) | Method for manufacturing embedded non-volatile memory | |
JP2008066725A (en) | Eeprom device and method of manufacturing the same | |
JP2007067027A (en) | Manufacturing method of built-in non-volatile memory | |
US10269909B1 (en) | Memory device and method for manufacturing the same | |
US10665726B2 (en) | Memory device and operation method thereof | |
JP2006041227A (en) | Semiconductor device and its manufacturing method | |
JP2022128592A (en) | Semiconductor element and method of manufacturing the same | |
KR20110065892A (en) | Flash memory device and method manufactruing of the same | |
KR100542497B1 (en) | Method For Manufacturing Semiconductor Devices | |
KR20100074525A (en) | Method manufactruing of flash memory device | |
JP2011049580A (en) | Semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., TAIW Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SHU, CHENG-BO;YANG, TSUNG-YU;HUANG, CHUNG-JEN;SIGNING DATES FROM 20161219 TO 20161220;REEL/FRAME:040821/0665 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 4 |