US20180083141A1 - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
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- US20180083141A1 US20180083141A1 US15/823,616 US201715823616A US2018083141A1 US 20180083141 A1 US20180083141 A1 US 20180083141A1 US 201715823616 A US201715823616 A US 201715823616A US 2018083141 A1 US2018083141 A1 US 2018083141A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 229910052751 metal Inorganic materials 0.000 claims abstract description 61
- 239000002184 metal Substances 0.000 claims abstract description 61
- 239000000463 material Substances 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 6
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 4
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 4
- VJPICIAGVDFWEO-UHFFFAOYSA-N 2-chloro-6,7-dihydro-5h-pyrrolo[3,4-d]pyrimidine Chemical compound ClC1=NC=C2CNCC2=N1 VJPICIAGVDFWEO-UHFFFAOYSA-N 0.000 claims description 2
- 229910017251 AsO4 Inorganic materials 0.000 claims description 2
- 229910017677 NH4H2 Inorganic materials 0.000 claims description 2
- 229910008651 TiZr Inorganic materials 0.000 claims description 2
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 claims description 2
- RZEADQZDBXGRSM-UHFFFAOYSA-N bismuth lanthanum Chemical compound [La].[Bi] RZEADQZDBXGRSM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 235000019837 monoammonium phosphate Nutrition 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- MUPJWXCPTRQOKY-UHFFFAOYSA-N sodium;niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Na+].[Nb+5] MUPJWXCPTRQOKY-UHFFFAOYSA-N 0.000 claims description 2
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 210
- 238000013459 approach Methods 0.000 description 10
- 230000005684 electric field Effects 0.000 description 10
- 238000002955 isolation Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910000951 Aluminide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- OQPDWFJSZHWILH-UHFFFAOYSA-N [Al].[Al].[Al].[Ti] Chemical compound [Al].[Al].[Al].[Ti] OQPDWFJSZHWILH-UHFFFAOYSA-N 0.000 description 2
- 230000005290 antiferromagnetic effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 230000005298 paramagnetic effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910021324 titanium aluminide Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40111—Multistep manufacturing processes for data storage electrodes the electrodes comprising a layer which is used for its ferroelectric properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6684—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a ferroelectric gate insulator
Definitions
- the present invention relates to a semiconductor device, and more particularly, to a semiconductor device including ferroelectric (hereinafter abbreviated as FE) material and anti-ferroelectric (hereinafter abbreviated as AFE) material.
- FE ferroelectric
- AFE anti-ferroelectric
- a semiconductor device means any device which can function by utilizing semiconductor characteristics, such as an electro-optical device, a semiconductor circuit, and an electronic device. Accordingly, semiconductor devices are used in a variety of electronic applications, such as personal computers, cell phones, digital cameras, and other electronic equipment, as example.
- Semiconductor devices are typically fabricated by sequentially depositing insulating or dielectric layer, conductive layers, and semiconductor layers over a semiconductor substrate, and patterning the various material layers using lithography to form circuit components and elements thereon. Since the semiconductor integrated circuit industry has experienced rapid growth and improvement, technological advances in semiconductor materials and design have produced increasingly smaller and more complex circuits. Consequently, the number of interconnected devices per unit of area has increased as the size of the smallest components that can be reliably created has decreased. However, as the size of the smallest components has decreased, numerous challenges have risen. As features become closer, current leakage can become more noticeable, signals can crossover more easily, and power usage has become a significant concern.
- MOS FET metal-oxide-semiconductor field effect transistor
- a small subthreshold swing is highly desired since it improves the ratio between the on and off currents, and therefore reduces leakage currents.
- Using a device with a small subthreshold swing therefore has advantages such as suppression of power consumption due to reduction in operation voltage and reduction in off leakage current.
- the subthreshold swing cannot be less than 60 mV/sec due to the physical limit of MOSFET device in state-of-the-art. Thus, it is still in need to reduce the subthreshold swing despite the physical limit.
- a semiconductor device includes a substrate, an electrode layer disposed on the substrate, and a tri-layered gate-control stack sandwiched between the substrate and the electrode layer.
- the tri-layered gate-control stack further includes a ferroelectric (FE) layer disposed on the substrate, an anti-ferroelectric (AFE) layer sandwiched between the FE layer and the substrate, and a mid-gap metal layer sandwiched between the FE layer and the AFE layer.
- FE ferroelectric
- AFE anti-ferroelectric
- a semiconductor device includes a substrate, an electrode layer disposed on the substrate, and a tri-layered gate-control stack sandwiched between the substrate and the electrode layer.
- the tri-layered gate-control stack further includes an AFE layer disposed on the substrate, a mid-gap metal layer sandwiched between the AFE layer and the substrate, and a FE layer sandwiched between the AFE layer and the mid-gap metal layer.
- a semiconductor device includes a substrate, an electrode layer disposed on the substrate, and a tri-layered gate-control stack sandwiched between the substrate and the electrode layer.
- the tri-layered gate-control stack further includes an amorphous dielectric layer, a mid-gap metal layer disposed between the amorphous dielectric layer and the substrate, and a polycrystalline dielectric layer.
- the mid-gap metal layer directly contacts the amorphous dielectric layer.
- the amorphous dielectric layer and the polycrystalline dielectric layer both include hafnium oxide materials.
- the tri-layered gate-control stack is provided between the electrode layer and the substrate, and the tri-layered gate-control stack includes the FE layer, the AFE layer and the mid-gap metal layer. It is noteworthy that in the tri-layered gate-control stack, the mid-gap metal layer is always sandwiched between the FE layer and the substrate while the AFE layer is disposed on or under the dual-layered structure consisting of the FE layer and the mid-gap metal layer. The FE layer is provided to enhance electric fields created by the electrode layer and the mid-gap metal layer is provided to homogenize the enhanced electric fields. Furthermore, the AFE layer is provided to render negative capacitance effect.
- the tri-layered gate-control stack is therefore used to replace conventional high-k gate dielectric layer according to the present invention, and the semiconductor device provided by the present invention therefore obtains smaller subthreshold swing.
- FIG. 1 is a schematic drawing illustrating a semiconductor device provided by a first preferred embodiment of the present invention.
- FIG. 2 is a schematic drawing illustrating a semiconductor device provided by a second preferred embodiment of the present invention.
- FIG. 1 is a schematic drawing illustrating a semiconductor device provided by a first preferred embodiment of the present invention.
- a semiconductor device 100 is proved by the preferred embodiment, and the semiconductor device 100 includes a substrate 102 such as silicon substrate, silicon-containing substrate, or silicon-on-insulator (hereinafter abbreviated as SOI) substrate.
- a plurality of isolation structures (not shown) is formed in the substrate 102 .
- the isolation structures can be shallow trench isolations (STIs), but not limited to this.
- the isolation structures are used to define a plurality of active regions for accommodating p-typed FET (hereinafter abbreviated as pFET) devices and/or n-typed FET (hereinafter abbreviated as nFET) devices, and to provide electrical isolation.
- a semiconductor layer such as a fin structure involved in fin field effect transistor (FinFET) approach can be provided.
- the fin structure can be formed by patterning a single crystalline silicon layer of a SOI substrate or a bulk silicon substrate by photolithographic etching pattern (PEP) method, multi patterning method, or, preferably, spacer self-aligned double-patterning (SADP), also known as sidewall image transfer (SIT) method.
- the fin structure can be taken as the substrate 102 in the preferred embodiment.
- An electrode layer 110 is disposed on the substrate 102 .
- metal gate approach is integrated.
- the electrode layer 110 includes at least a work function metal layer 110 a , and the work function metal layer 110 a includes various metal materials depending on the conductivity type of the semiconductor device 100 to be formed.
- the semiconductor device 100 is a p-typed semiconductor device
- the work function metal layer 110 a includes any suitable metal material having a work function between about 4.8 eV and about 5.2 eV such as titanium nitride (TiN), tantalum nitride (TaN), titanium carbide (TiC), tantalum carbide (TaC), tungsten carbide (WC), or aluminum titanium nitride (TiAlN), but not limited to this.
- the semiconductor device 100 is an n-typed semiconductor device
- the work function metal layer 110 a includes any suitable metal material having a work function between about 3.9 eV and about 4.3 eV, such as titanium aluminide (TiAl), zirconium aluminide (ZrAl), tungsten aluminide (WAl), tantalum aluminide (TaAl), or hafnium aluminide (HfAl), but not limited to this.
- the work function metal layer 110 a can be a single-layered structure or a multi-layered structure.
- the electrode layer 110 further includes a gap-filling metal layer 110 b , and the gap-filling metal layer 110 b can be a single metal layer or a multiple metal layer including superior gap filing ability, such as Al, Ti, Ta, W, Nb, Mo, Cu, TiN, TiC, TaN, Ti/W, or Ti/TiN, but not limited to this. Furthermore, it is well-known to those skilled in the art that a bottom barrier layer, an etch stop layer, and/or a top barrier layer can be included in the electrode layer 110 if required. As shown in FIG.
- a bottom barrier layer 112 is sandwiched between the electrode layer 110 and the substrate 100 , and an etch stop layer 114 is sandwiched between the electrode layer 110 and the bottom barrier layer 112 .
- a top barrier layer (not shown) can be sandwiched between the work function metal layer 110 a and the gap-filling metal layer 110 b .
- the etch stop layer 114 preferably includes material including etching rate different from the bottom barrier layer 112 .
- the bottom barrier layer 112 can be a TiN layer and the etch stop layer 114 can be a TaN layer.
- the semiconductor device 100 provided by the preferred embodiment further includes a tri-layered gate-control stack 120 sandwiched between the substrate 102 and the electrode layer 110 .
- the tri-layered gate-control stack 120 includes a FE layer 122 disposed on the substrate 102 , an AFE layer 126 sandwiched between the FE layer 122 and the substrate 102 , and a mid-gap metal layer 124 sandwiched between the FE layer 122 and the AFE layer 126 .
- the FE layer 122 includes a material selected from the group consisting of lead zirconate titanate (bZrTiO 3 , PZT), lead lanthanum zirconate titanate (PbLa(TiZr)O 3 , PLZT), strontiumbismuthtantalate (SrBiTa 2 O 9 , SBT), bismuth lanthanum titanate ((BiLa) 4 Ti 3 O 12 , BLT), and barium strontium titanate (BaSrTiO 3 , BST).
- bZrTiO 3 , PZT lead zirconate titanate
- PbLa(TiZr)O 3 , PLZT lead lanthanum zirconate titanate
- strontiumbismuthtantalate SrBiTa 2 O 9 , SBT
- bismuth lanthanum titanate (BiLa) 4 Ti 3 O 12 , BLT)
- barium strontium titanate BaSrT
- the AFE layer 126 includes a material selected from the group consisting of lead indium niobate (Pb(InNb)O 3 ), niobium-sodium oxide (NbNaO 3 ), lead zirconate (ZrPbO 3 ), lead lanthanum zirconate titanate (TiZrLaPbO 3 ), lead zirconate titanate (TiZrPbO 3 ), ammonium dihydrogen phosphate (NH 4 H 2 PO 4 , ADP), and ammonium dihydrogen arsenate (NH 4 H 2 AsO 4 , ADA).
- Pb(InNb)O 3 lead indium niobate
- NbNaO 3 niobium-sodium oxide
- ZrPbO 3 lead zirconate
- TiZrLaPbO 3 lead lanthanum zirconate titanate
- TiZrPbO 3 lead zirconate titanate
- the FE layer 122 and the AFE layer 126 can include the same elementary material but with different crystalline morphologies and/or composition ratio.
- both of the FE layer 122 and the AFE layer 126 can include hafnium oxide material such as HfZrO x , but the FE layer 122 includes amorphous HfZrO x while the AFE layer 126 includes polycrystalline HfZrO x .
- hafnium oxide material can still include other elementary material such as Zr in accordance with the present invention.
- the FE layer 122 is taken as an amorphous or a fractionally crystalized dielectric layer and the AFE layer 126 is taken as a polycrystalline dielectric layer.
- the mid-gap metal layer 124 includes metal having a work function between valence band and conduction band.
- the mid-gap metal layer 124 includes metal nitride such as, for example but not limited to, TiN, TaN, titanium silicon nitride (TiSiN), tantalum silicon nitride (TaSiN), or molybdenum nitride (MoN).
- the mid-gap metal layer 124 can include nickel silicide (NiSi), tungsten silicide (WSi), cobalt silicide (CoSi 2 ), or titanium tungsten (TiW), but not limited to this.
- a dummy gate or a replacement gate is formed on the substrate 102 and followed by forming elements of a FET device such as light doped drains (LDDs) 106 , a spacer 104 , and a source/drain 108 .
- the dummy gate includes a dielectric layer (not shown), a conductive layer such as a polysilicon layer (not shown), and a patterned hard mask (not shown).
- the spacer 104 can be a single-layered structure or a multi-layered structure, but not limited to this.
- selective strain scheme SSS
- SEG selective epitaxial growth
- a selective epitaxial growth (SEG) method can be used to form the source/drain.
- SEG selective epitaxial growth
- epitaxial silicon layers of SiGe are used to form the source/drain.
- epitaxial silicon layers of SiC or SiP are used to form the source/drain.
- salicides (not shown) can be formed on the source/drain 108 .
- an etch liner such as a contact etch stop layer (hereinafter abbreviated as CESL) (not shown) is selectively formed on the substrate 100 , and an interlayer dielectric (hereinafter abbreviated as ILD) layer 130 is subsequently formed.
- a planarization process such as chemical mechanical polishing (CMP) process is performed to planarize the ILD layer 130 and the CESL.
- CMP chemical mechanical polishing
- the patterned hard mask is then removed to expose the conductive layer of the dummy gate and followed by removing the conductive layer and the dielectric layer of the dummy gate. Consequently, a gate trench (not shown) is formed on the substrate 102 .
- an oxide liner 128 can be formed in the gate trench and followed by forming the tri-layered gate-control stack 120 in the gate trench. And after forming the tri-layered gate-control stack 120 , the abovementioned metal layers are formed. Accordingly, the tri-layered gate-control stack 120 includes a U shape in the preferred embodiments.
- the oxide liner 128 serves as an interfacial layer (IL), and the interfacial layer provides a superior interface between the substrate 102 and the tri-layered gate-control stack 120 .
- the bottom barrier layer 112 and the etch stop layer 114 are sandwiched between the tri-layered gate-control stack 120 and the electrode layer 110 as shown in FIG. 1 . It should be easily understood to those skilled in the art that in still other preferred embodiments of the present invention, high-k first approach can be adopted and thus the tri-layered gate-control stack 120 includes a flap shape in those preferred embodiments.
- the tri-layered gate-control stack 120 sandwiched between the electrode layer 110 and the substrate 102 is provided.
- the FE layer 122 (or, the material layer including the ferroelectric characteristic due to its amorphous or fractionally crystalized morphology, such as the amorphous or fractionally crystalized dielectric layer) of the tri-layered gate-control stack 120 is used to enhance the electric fields created by the electrode layer 110 .
- the electric fields enhanced by the FE layer 122 are inhomogeneous. Therefore, the mid-gap metal layer 124 sandwiched between the FE layer 122 and the substrate 102 is provided.
- the mid-gap metal layer 124 directly contacts the FE layer (the amorphous or fractionally crystalized dielectric layer) and homogenizes the electric fields enhanced by the FE layer 122 . Furthermore, the AFE layer 126 (the material layer including anti-ferroelectric characteristic due to its polycrystalline morphology, such as the polycrystalline dielectric layer) is provided to render negative capacitance effect. Consequently, the subthreshold swing is reduced. Compared with the device including the convention high-k gate dielectric layer, the subthreshold swing of the semiconductor device 100 provided by the present invention is significantly reduced from 60 mV/dec to 10 mV/dec, which is beyond the physical limit. And thus both leakage current and power consumption are reduced.
- FIG. 2 is a schematic drawing illustrating a semiconductor device provided by a second preferred embodiment of the present invention.
- a semiconductor device 200 is proved by the preferred embodiment, and the semiconductor device 200 includes a substrate 202 .
- a plurality of isolation structures (not shown) is formed in the substrate 202 .
- the isolation structures are used to define a plurality of active regions for accommodating pFET devices and/or nFET devices, and to provide electrical isolation.
- a semiconductor layer such as a fin structure involved in FinFET approach can be provided and taken as the substrate 202 in some preferred embodiments of the present invention.
- An electrode layer 210 is disposed on the substrate 202 .
- metal gate approach is integrated.
- the electrode layer 210 includes at least a work function metal layer 210 a
- the work function metal layer 210 a includes various metal materials depending on the conductivity type of the semiconductor device 200 to be formed:
- the semiconductor device 200 is a p-typed semiconductor device
- the work function metal layer 210 a includes any suitable metal material having a work function between about 4.8 eV and about 5.2 eV.
- the semiconductor device 200 is an n-typed semiconductor device
- the work function metal layer 210 a includes any suitable metal material having a work function between about 3.9 eV and about 4.3 eV.
- the work function metal layer 210 a can be a single-layered structure or a multi-layered structure.
- the electrode layer 210 further includes a gap-filling metal layer 210 b , and the gap-filling metal layer 210 b can be a single metal layer or a multiple metal layer including superior gap filing ability.
- a bottom barrier layer, an etch stop layer, and/or a top barrier layer can be included in the electrode layer 210 if required. As shown in FIG.
- a bottom barrier layer 212 is sandwiched between the electrode layer 210 and the substrate 200 while an etch stop layer 214 is sandwiched between the electrode layer 210 and the bottom barrier layer 212 .
- a top barrier layer (not shown) can be sandwiched between the work function metal layer 210 a and the gap-filling metal layer 210 b .
- the etch stop layer 214 preferably includes material including etching rate different from the bottom barrier layer 212 .
- the semiconductor device 200 provided by the preferred embodiment further includes a tri-layered gate-control stack 220 sandwiched between the substrate 202 and the electrode layer 210 .
- the tri-layered gate-control stack 220 includes an AFE layer 226 disposed on the substrate 202 , a mid-gap metal layer 224 sandwiched between the AFE layer 226 and the substrate 202 , and a FE layer 222 sandwiched between the AFE layer 226 and the mid-gap metal layer 224 .
- the FE layer 222 and the AFE layer 226 can include different materials, or the same elementary material but with different crystalline morphologies and/or composition ratio. In other words, the FE layer 222 can be taken an amorphous or a fractionally crystalized dielectric layer while the AFE layer 226 can be taken as a polycrystalline dielectric layer.
- high-k last approach is adopted in preferred embodiments of the present invention in order to avoid the above mentioned issue.
- a dummy gate or a replacement gate (not shown) is formed on the substrate 202 and followed by forming elements of a FET device such as LDDs 206 , a spacer 204 , and a source/drain 208 .
- the dummy gate is removed to form a gate trench (not shown) on the substrate 202 .
- an oxide liner 228 can be formed in the gate trench and followed by forming the tri-layered gate-control stack 220 in the gate trench. And after forming the tri-layered gate-control stack 220 , the abovementioned metal layers are formed. Accordingly, the tri-layered gate-control stack 220 includes a U shape in the preferred embodiments.
- the oxide liner 228 serves as an interfacial layer, and the interfacial layer provides a superior interface between the substrate 202 and the tri-layered gate-control stack 220 .
- the bottom barrier layer 212 and the etch stop layer 214 are sandwiched between the tri-layered gate-control stack 220 and the electrode layer 210 as shown in FIG. 2 . It should be easily understood to those skilled in the art that in still other preferred embodiments of the present invention, high-k first approach can be adopted and thus the tri-layered gate-control stack 220 includes a flap shape in those preferred embodiments.
- the tri-layered gate-control stack 220 sandwiched between the electrode layer 210 and the substrate 202 is provided.
- the FE layer 222 (or the amorphous or fractionally crystalized dielectric layer) of the tri-layered gate-control stack 220 is used to enhance the electric fields created by the electrode layer 210 .
- the electric fields enhanced by the FE layer 222 are inhomogeneous. Therefore, the mid-gap metal layer 224 sandwiched between the FE layer 222 and the substrate 202 is provided.
- the mid-gap metal layer 224 directly contacts the FE layer (the amorphous or fractionally crystalized dielectric layer) and homogenizes the electric fields enhanced by the FE layer 222 .
- the AFE layer 226 (the polycrystalline dielectric layer) is provided to render negative capacitance effect. Consequently, the subthreshold swing is reduced.
- the subthreshold swing of the semiconductor device 200 provided by the present invention is significantly reduced to be lower than 60 mV/dec, which is still beyond the physical limit. And thus both leakage current and power consumption are reduced.
- the tri-layered gate-control stack is provided between the electrode layer and the substrate, and the tri-layered gate-control stack includes the FE layer (or the amorphous or fractionally crystalized dielectric layer in some conditions), the AFE layer (or the polycrystalline dielectric layer in some conditions), and the mid-gap metal layer.
- the mid-gap metal layer is always sandwiched between the FE layer and the substrate while the AFE layer is disposed on or under the dual-layered structure consisting of the FE layer and the mid-gap metal layer.
- the mid-gap metal layer directly contacts the FE layer.
- the FE layer is provided to enhance electric fields of the electrode layer and the mid-gap metal layer is provided to homogenize the enhanced electric fields. Furthermore, the AFE layer is provided to render negative capacitance effect.
- the tri-layered gate-control stack is therefore used to replace conventional high-k gate dielectric layer according to the present invention, and the semiconductor device provided by the present invention obtains smaller subthreshold swing, and thus both leakage current and power consumption are reduced.
Abstract
A semiconductor device includes a substrate, an electrode layer disposed on the substrate, and a tri-layered gate-control stack sandwiched between the substrate and the electrode layer. The tri-layered gate-control stack includes a ferroelectric layer disposed on the substrate, a mid-gap metal layer sandwiched between the ferroelectric layer and the substrate, and an anti-ferroelectric layer. The anti-ferroelectric layer is sandwiched between the substrate and the mid-gap metal layer. Alternatively, the ferroelectric layer and the mid-gap metal layer are sandwiched between the anti-ferroelectric layer and the substrate.
Description
- This application is a divisional of application Ser. No. 15/206,319, filed Jul. 11, 2016.
- The present invention relates to a semiconductor device, and more particularly, to a semiconductor device including ferroelectric (hereinafter abbreviated as FE) material and anti-ferroelectric (hereinafter abbreviated as AFE) material.
- A semiconductor device means any device which can function by utilizing semiconductor characteristics, such as an electro-optical device, a semiconductor circuit, and an electronic device. Accordingly, semiconductor devices are used in a variety of electronic applications, such as personal computers, cell phones, digital cameras, and other electronic equipment, as example.
- Semiconductor devices are typically fabricated by sequentially depositing insulating or dielectric layer, conductive layers, and semiconductor layers over a semiconductor substrate, and patterning the various material layers using lithography to form circuit components and elements thereon. Since the semiconductor integrated circuit industry has experienced rapid growth and improvement, technological advances in semiconductor materials and design have produced increasingly smaller and more complex circuits. Consequently, the number of interconnected devices per unit of area has increased as the size of the smallest components that can be reliably created has decreased. However, as the size of the smallest components has decreased, numerous challenges have risen. As features become closer, current leakage can become more noticeable, signals can crossover more easily, and power usage has become a significant concern. Typically, when a gate bias of a metal-oxide-semiconductor field effect transistor (hereinafter abbreviated as MOS FET) device is below the threshold voltage Vth, the current flow between the source and the drain, which is defined as the subthreshold current, is supposed to be zero. Or, the subthreshold current was supposed to be very small and thus in early analytical models of the electrical behavior of MOS FET were even assuming a zero off-state current/subthreshold current. Those skilled in the art should have known there is a linear relationship between the subthreshold current and the gate voltage, which is recognized as subthreshold swing (SS). A small subthreshold swing is highly desired since it improves the ratio between the on and off currents, and therefore reduces leakage currents. Using a device with a small subthreshold swing therefore has advantages such as suppression of power consumption due to reduction in operation voltage and reduction in off leakage current. However, the subthreshold swing cannot be less than 60 mV/sec due to the physical limit of MOSFET device in state-of-the-art. Thus, it is still in need to reduce the subthreshold swing despite the physical limit.
- According to an aspect of the present invention, a semiconductor device is provided. The semiconductor device includes a substrate, an electrode layer disposed on the substrate, and a tri-layered gate-control stack sandwiched between the substrate and the electrode layer. The tri-layered gate-control stack further includes a ferroelectric (FE) layer disposed on the substrate, an anti-ferroelectric (AFE) layer sandwiched between the FE layer and the substrate, and a mid-gap metal layer sandwiched between the FE layer and the AFE layer.
- According to another aspect of the present invention, a semiconductor device is provided. The semiconductor device includes a substrate, an electrode layer disposed on the substrate, and a tri-layered gate-control stack sandwiched between the substrate and the electrode layer. The tri-layered gate-control stack further includes an AFE layer disposed on the substrate, a mid-gap metal layer sandwiched between the AFE layer and the substrate, and a FE layer sandwiched between the AFE layer and the mid-gap metal layer.
- According to still another aspect of the present invention, a semiconductor device is provided. The semiconductor device includes a substrate, an electrode layer disposed on the substrate, and a tri-layered gate-control stack sandwiched between the substrate and the electrode layer. The tri-layered gate-control stack further includes an amorphous dielectric layer, a mid-gap metal layer disposed between the amorphous dielectric layer and the substrate, and a polycrystalline dielectric layer. The mid-gap metal layer directly contacts the amorphous dielectric layer. And the amorphous dielectric layer and the polycrystalline dielectric layer both include hafnium oxide materials.
- According to the semiconductor devices provided by the present invention, the tri-layered gate-control stack is provided between the electrode layer and the substrate, and the tri-layered gate-control stack includes the FE layer, the AFE layer and the mid-gap metal layer. It is noteworthy that in the tri-layered gate-control stack, the mid-gap metal layer is always sandwiched between the FE layer and the substrate while the AFE layer is disposed on or under the dual-layered structure consisting of the FE layer and the mid-gap metal layer. The FE layer is provided to enhance electric fields created by the electrode layer and the mid-gap metal layer is provided to homogenize the enhanced electric fields. Furthermore, the AFE layer is provided to render negative capacitance effect. The tri-layered gate-control stack is therefore used to replace conventional high-k gate dielectric layer according to the present invention, and the semiconductor device provided by the present invention therefore obtains smaller subthreshold swing.
- These and other objectives of the present invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.
-
FIG. 1 is a schematic drawing illustrating a semiconductor device provided by a first preferred embodiment of the present invention, and -
FIG. 2 is a schematic drawing illustrating a semiconductor device provided by a second preferred embodiment of the present invention. - Please refer to
FIG. 1 , which is a schematic drawing illustrating a semiconductor device provided by a first preferred embodiment of the present invention. As shown inFIG. 1 , asemiconductor device 100 is proved by the preferred embodiment, and thesemiconductor device 100 includes asubstrate 102 such as silicon substrate, silicon-containing substrate, or silicon-on-insulator (hereinafter abbreviated as SOI) substrate. A plurality of isolation structures (not shown) is formed in thesubstrate 102. The isolation structures can be shallow trench isolations (STIs), but not limited to this. The isolation structures are used to define a plurality of active regions for accommodating p-typed FET (hereinafter abbreviated as pFET) devices and/or n-typed FET (hereinafter abbreviated as nFET) devices, and to provide electrical isolation. In some preferred embodiments of the present invention, a semiconductor layer such as a fin structure involved in fin field effect transistor (FinFET) approach can be provided. The fin structure can be formed by patterning a single crystalline silicon layer of a SOI substrate or a bulk silicon substrate by photolithographic etching pattern (PEP) method, multi patterning method, or, preferably, spacer self-aligned double-patterning (SADP), also known as sidewall image transfer (SIT) method. And the fin structure can be taken as thesubstrate 102 in the preferred embodiment. - An
electrode layer 110 is disposed on thesubstrate 102. In the preferred embodiment, metal gate approach is integrated. Accordingly, theelectrode layer 110 includes at least a workfunction metal layer 110 a, and the workfunction metal layer 110 a includes various metal materials depending on the conductivity type of thesemiconductor device 100 to be formed. In some embodiments of the present invention, thesemiconductor device 100 is a p-typed semiconductor device, and the workfunction metal layer 110 a includes any suitable metal material having a work function between about 4.8 eV and about 5.2 eV such as titanium nitride (TiN), tantalum nitride (TaN), titanium carbide (TiC), tantalum carbide (TaC), tungsten carbide (WC), or aluminum titanium nitride (TiAlN), but not limited to this. Alternatively, in some embodiments of the present invention, thesemiconductor device 100 is an n-typed semiconductor device, and the workfunction metal layer 110 a includes any suitable metal material having a work function between about 3.9 eV and about 4.3 eV, such as titanium aluminide (TiAl), zirconium aluminide (ZrAl), tungsten aluminide (WAl), tantalum aluminide (TaAl), or hafnium aluminide (HfAl), but not limited to this. Additionally, the workfunction metal layer 110 a can be a single-layered structure or a multi-layered structure. Theelectrode layer 110 further includes a gap-fillingmetal layer 110 b, and the gap-fillingmetal layer 110 b can be a single metal layer or a multiple metal layer including superior gap filing ability, such as Al, Ti, Ta, W, Nb, Mo, Cu, TiN, TiC, TaN, Ti/W, or Ti/TiN, but not limited to this. Furthermore, it is well-known to those skilled in the art that a bottom barrier layer, an etch stop layer, and/or a top barrier layer can be included in theelectrode layer 110 if required. As shown inFIG. 1 , abottom barrier layer 112 is sandwiched between theelectrode layer 110 and thesubstrate 100, and anetch stop layer 114 is sandwiched between theelectrode layer 110 and thebottom barrier layer 112. Additionally, a top barrier layer (not shown) can be sandwiched between the workfunction metal layer 110 a and the gap-fillingmetal layer 110 b. Theetch stop layer 114 preferably includes material including etching rate different from thebottom barrier layer 112. For example but not limited to, thebottom barrier layer 112 can be a TiN layer and theetch stop layer 114 can be a TaN layer. - Please still refer to
FIG. 1 . Thesemiconductor device 100 provided by the preferred embodiment further includes a tri-layered gate-control stack 120 sandwiched between thesubstrate 102 and theelectrode layer 110. The tri-layered gate-control stack 120 includes aFE layer 122 disposed on thesubstrate 102, anAFE layer 126 sandwiched between theFE layer 122 and thesubstrate 102, and amid-gap metal layer 124 sandwiched between theFE layer 122 and theAFE layer 126. In some embodiments of the present invention, theFE layer 122 includes a material selected from the group consisting of lead zirconate titanate (bZrTiO3, PZT), lead lanthanum zirconate titanate (PbLa(TiZr)O3, PLZT), strontiumbismuthtantalate (SrBiTa2O9, SBT), bismuth lanthanum titanate ((BiLa)4Ti3O12, BLT), and barium strontium titanate (BaSrTiO3, BST). TheAFE layer 126 includes a material selected from the group consisting of lead indium niobate (Pb(InNb)O3), niobium-sodium oxide (NbNaO3), lead zirconate (ZrPbO3), lead lanthanum zirconate titanate (TiZrLaPbO3), lead zirconate titanate (TiZrPbO3), ammonium dihydrogen phosphate (NH4H2PO4, ADP), and ammonium dihydrogen arsenate (NH4H2AsO4, ADA). It is noteworthy that theFE layer 122 and theAFE layer 126 can include the same elementary material but with different crystalline morphologies and/or composition ratio. For example, both of theFE layer 122 and theAFE layer 126 can include hafnium oxide material such as HfZrOx, but theFE layer 122 includes amorphous HfZrOx while theAFE layer 126 includes polycrystalline HfZrOx. It is noteworthy that hafnium oxide material can still include other elementary material such as Zr in accordance with the present invention. In other words, in some embodiments of the present invention, theFE layer 122 is taken as an amorphous or a fractionally crystalized dielectric layer and theAFE layer 126 is taken as a polycrystalline dielectric layer. Themid-gap metal layer 124 includes metal having a work function between valence band and conduction band. Themid-gap metal layer 124 includes metal nitride such as, for example but not limited to, TiN, TaN, titanium silicon nitride (TiSiN), tantalum silicon nitride (TaSiN), or molybdenum nitride (MoN). In other embodiments of the present invention, themid-gap metal layer 124 can include nickel silicide (NiSi), tungsten silicide (WSi), cobalt silicide (CoSi2), or titanium tungsten (TiW), but not limited to this. - It is noteworthy that since an antiferromagnetic state will transfer to a paramagnetic state at a temperature over the Neel temperature, high-k last approach is adopted in the preferred embodiments of the present invention in order to avoid the above mentioned issue. It is well-known to those skilled in the art that in the high-k last approach, a dummy gate or a replacement gate (not shown) is formed on the
substrate 102 and followed by forming elements of a FET device such as light doped drains (LDDs) 106, aspacer 104, and a source/drain 108. The dummy gate includes a dielectric layer (not shown), a conductive layer such as a polysilicon layer (not shown), and a patterned hard mask (not shown). Thespacer 104 can be a single-layered structure or a multi-layered structure, but not limited to this. Furthermore, selective strain scheme (SSS) can be used in the preferred embodiments of the present invention. For example, a selective epitaxial growth (SEG) method can be used to form the source/drain. When thesemiconductor device 100 is the p-typed transistor, epitaxial silicon layers of SiGe are used to form the source/drain. When thesemiconductor device 100 is the n-typed transistor, epitaxial silicon layers of SiC or SiP are used to form the source/drain. Additionally, salicides (not shown) can be formed on the source/drain 108. After forming thesemiconductor device 100, an etch liner such as a contact etch stop layer (hereinafter abbreviated as CESL) (not shown) is selectively formed on thesubstrate 100, and an interlayer dielectric (hereinafter abbreviated as ILD)layer 130 is subsequently formed. Next, a planarization process such as chemical mechanical polishing (CMP) process is performed to planarize theILD layer 130 and the CESL. The patterned hard mask is then removed to expose the conductive layer of the dummy gate and followed by removing the conductive layer and the dielectric layer of the dummy gate. Consequently, a gate trench (not shown) is formed on thesubstrate 102. In some preferred embodiments of the present invention, anoxide liner 128 can be formed in the gate trench and followed by forming the tri-layered gate-control stack 120 in the gate trench. And after forming the tri-layered gate-control stack 120, the abovementioned metal layers are formed. Accordingly, the tri-layered gate-control stack 120 includes a U shape in the preferred embodiments. Theoxide liner 128 serves as an interfacial layer (IL), and the interfacial layer provides a superior interface between thesubstrate 102 and the tri-layered gate-control stack 120. Additionally, thebottom barrier layer 112 and theetch stop layer 114 are sandwiched between the tri-layered gate-control stack 120 and theelectrode layer 110 as shown inFIG. 1 . It should be easily understood to those skilled in the art that in still other preferred embodiments of the present invention, high-k first approach can be adopted and thus the tri-layered gate-control stack 120 includes a flap shape in those preferred embodiments. - According to the
semiconductor device 100 provided by the preferred embodiment, the tri-layered gate-control stack 120 sandwiched between theelectrode layer 110 and thesubstrate 102 is provided. The FE layer 122 (or, the material layer including the ferroelectric characteristic due to its amorphous or fractionally crystalized morphology, such as the amorphous or fractionally crystalized dielectric layer) of the tri-layered gate-control stack 120 is used to enhance the electric fields created by theelectrode layer 110. However, it is found the electric fields enhanced by theFE layer 122 are inhomogeneous. Therefore, themid-gap metal layer 124 sandwiched between theFE layer 122 and thesubstrate 102 is provided. Themid-gap metal layer 124 directly contacts the FE layer (the amorphous or fractionally crystalized dielectric layer) and homogenizes the electric fields enhanced by theFE layer 122. Furthermore, the AFE layer 126 (the material layer including anti-ferroelectric characteristic due to its polycrystalline morphology, such as the polycrystalline dielectric layer) is provided to render negative capacitance effect. Consequently, the subthreshold swing is reduced. Compared with the device including the convention high-k gate dielectric layer, the subthreshold swing of thesemiconductor device 100 provided by the present invention is significantly reduced from 60 mV/dec to 10 mV/dec, which is beyond the physical limit. And thus both leakage current and power consumption are reduced. - Please refer to
FIG. 2 , which is a schematic drawing illustrating a semiconductor device provided by a second preferred embodiment of the present invention. It should be noted that elements the same in the first and second preferred embodiments can be formed by the same method with the same material, thus those details are omitted in the interest of brevity. As shown inFIG. 2 , asemiconductor device 200 is proved by the preferred embodiment, and thesemiconductor device 200 includes asubstrate 202. A plurality of isolation structures (not shown) is formed in thesubstrate 202. The isolation structures are used to define a plurality of active regions for accommodating pFET devices and/or nFET devices, and to provide electrical isolation. Furthermore, a semiconductor layer such as a fin structure involved in FinFET approach can be provided and taken as thesubstrate 202 in some preferred embodiments of the present invention. - An
electrode layer 210 is disposed on thesubstrate 202. In the preferred embodiment, metal gate approach is integrated. Accordingly, theelectrode layer 210 includes at least a workfunction metal layer 210 a, and the workfunction metal layer 210 a includes various metal materials depending on the conductivity type of thesemiconductor device 200 to be formed: In some embodiments of the present invention, thesemiconductor device 200 is a p-typed semiconductor device, and the workfunction metal layer 210 a includes any suitable metal material having a work function between about 4.8 eV and about 5.2 eV. Alternatively, in some embodiments of the present invention, thesemiconductor device 200 is an n-typed semiconductor device, and the workfunction metal layer 210 a includes any suitable metal material having a work function between about 3.9 eV and about 4.3 eV. Additionally, the workfunction metal layer 210 a can be a single-layered structure or a multi-layered structure. Theelectrode layer 210 further includes a gap-fillingmetal layer 210 b, and the gap-fillingmetal layer 210 b can be a single metal layer or a multiple metal layer including superior gap filing ability. Furthermore, it should be easily understood to those skilled in the art that a bottom barrier layer, an etch stop layer, and/or a top barrier layer can be included in theelectrode layer 210 if required. As shown inFIG. 2 , abottom barrier layer 212 is sandwiched between theelectrode layer 210 and thesubstrate 200 while anetch stop layer 214 is sandwiched between theelectrode layer 210 and thebottom barrier layer 212. Additionally, a top barrier layer (not shown) can be sandwiched between the workfunction metal layer 210 a and the gap-fillingmetal layer 210 b. And theetch stop layer 214 preferably includes material including etching rate different from thebottom barrier layer 212. - Please still refer to
FIG. 2 . Thesemiconductor device 200 provided by the preferred embodiment further includes a tri-layered gate-control stack 220 sandwiched between thesubstrate 202 and theelectrode layer 210. The tri-layered gate-control stack 220 includes anAFE layer 226 disposed on thesubstrate 202, amid-gap metal layer 224 sandwiched between theAFE layer 226 and thesubstrate 202, and aFE layer 222 sandwiched between theAFE layer 226 and themid-gap metal layer 224. As mentioned above, theFE layer 222 and theAFE layer 226 can include different materials, or the same elementary material but with different crystalline morphologies and/or composition ratio. In other words, theFE layer 222 can be taken an amorphous or a fractionally crystalized dielectric layer while theAFE layer 226 can be taken as a polycrystalline dielectric layer. - As mentioned afore, since an antiferromagnetic state will transfer to a paramagnetic state at a temperature over the Neel temperature, high-k last approach is adopted in preferred embodiments of the present invention in order to avoid the above mentioned issue. It is well-known to those skilled in the art that in the high-k last approach, a dummy gate or a replacement gate (not shown) is formed on the
substrate 202 and followed by forming elements of a FET device such asLDDs 206, aspacer 204, and a source/drain 208. And after forming a CESL (not shown) and anILD layer 230, the dummy gate is removed to form a gate trench (not shown) on thesubstrate 202. In some preferred embodiments of the present invention, anoxide liner 228 can be formed in the gate trench and followed by forming the tri-layered gate-control stack 220 in the gate trench. And after forming the tri-layered gate-control stack 220, the abovementioned metal layers are formed. Accordingly, the tri-layered gate-control stack 220 includes a U shape in the preferred embodiments. Theoxide liner 228 serves as an interfacial layer, and the interfacial layer provides a superior interface between thesubstrate 202 and the tri-layered gate-control stack 220. Additionally, thebottom barrier layer 212 and theetch stop layer 214 are sandwiched between the tri-layered gate-control stack 220 and theelectrode layer 210 as shown inFIG. 2 . It should be easily understood to those skilled in the art that in still other preferred embodiments of the present invention, high-k first approach can be adopted and thus the tri-layered gate-control stack 220 includes a flap shape in those preferred embodiments. - According to the
semiconductor device 200 provided by the preferred embodiment, the tri-layered gate-control stack 220 sandwiched between theelectrode layer 210 and thesubstrate 202 is provided. The FE layer 222 (or the amorphous or fractionally crystalized dielectric layer) of the tri-layered gate-control stack 220 is used to enhance the electric fields created by theelectrode layer 210. However, it is found the electric fields enhanced by theFE layer 222 are inhomogeneous. Therefore, themid-gap metal layer 224 sandwiched between theFE layer 222 and thesubstrate 202 is provided. Themid-gap metal layer 224 directly contacts the FE layer (the amorphous or fractionally crystalized dielectric layer) and homogenizes the electric fields enhanced by theFE layer 222. Furthermore, the AFE layer 226 (the polycrystalline dielectric layer) is provided to render negative capacitance effect. Consequently, the subthreshold swing is reduced. Compared with the device including the convention high-k gate dielectric layer, the subthreshold swing of thesemiconductor device 200 provided by the present invention is significantly reduced to be lower than 60 mV/dec, which is still beyond the physical limit. And thus both leakage current and power consumption are reduced. - According to the semiconductor devices provided by the present invention, the tri-layered gate-control stack is provided between the electrode layer and the substrate, and the tri-layered gate-control stack includes the FE layer (or the amorphous or fractionally crystalized dielectric layer in some conditions), the AFE layer (or the polycrystalline dielectric layer in some conditions), and the mid-gap metal layer. It is noteworthy that in the tri-layered gate-control stack, the mid-gap metal layer is always sandwiched between the FE layer and the substrate while the AFE layer is disposed on or under the dual-layered structure consisting of the FE layer and the mid-gap metal layer. Preferably, the mid-gap metal layer directly contacts the FE layer. The FE layer is provided to enhance electric fields of the electrode layer and the mid-gap metal layer is provided to homogenize the enhanced electric fields. Furthermore, the AFE layer is provided to render negative capacitance effect. The tri-layered gate-control stack is therefore used to replace conventional high-k gate dielectric layer according to the present invention, and the semiconductor device provided by the present invention obtains smaller subthreshold swing, and thus both leakage current and power consumption are reduced.
- Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.
Claims (8)
1. A semiconductor device comprising:
a substrate;
an electrode layer disposed on the substrate; and
a tri-layered gate-control stack sandwiched between the substrate and the electrode layer, the tri-layered gate-control stack comprising:
an anti-ferroelectric (AFE) layer disposed on the substrate;
a mid-gap metal layer sandwiched between the AFE layer and the substrate; and
a ferroelectric layer sandwiched between the AFE layer and the mid-gap metal layer.
2. The semiconductor device according to claim 1 , wherein the electrode layer comprises at least a work function metal layer.
3. The semiconductor device according to claim 1 further comprising an oxide liner layer sandwiched between the mid-gap metal layer of the tri-layered gate-control stack and the substrate.
4. The semiconductor device according to claim 1 , wherein the ferroelectric layer comprises a material selected from the group consisting of lead zirconate titanate (bZrTiO3, PZT), lead lanthanum zirconate titanate (PbLa(TiZr)O3, PLZT), strontium bismuth tantalite (SrBiTa2O9, SBT), bismuth lanthanum titanate ((BiLa)4Ti3O12,BLT), and barium strontium titanate (BaSrTiO3, BST).
5. The semiconductor device according to claim 1 , wherein the mid-gap metal layer comprises metal nitride.
6. The semiconductor device according to claim 1 , wherein the AFE layer comprises a material selected from the group consisting of lead indium niobate (Pb(InNb)O3), niobium-sodium oxide (NbNaO3), lead zirconate (ZrPbO3), lead lanthanum zirconate titanate (TiZrLaPbO3), lead zirconate titanate (TiZrPbO3), ammonium dihydrogen phosphate (NH4H2PO4, ADP), and ammonium dihydrogen arsenate (NH4H2AsO4, ADA).
7. The semiconductor device according to claim 1 , further comprising a bottom barrier layer and an etch stop layer sandwiched between the tri-layered gate-control stack and the electrode layer.
8. The semiconductor device according to claim 1 , wherein the tri-layered gate-control stack comprises a U shape.
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US9871136B2 (en) | 2018-01-16 |
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