US20160314811A1 - Onset layer for perpendicular magnetic recording media - Google Patents
Onset layer for perpendicular magnetic recording media Download PDFInfo
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- US20160314811A1 US20160314811A1 US15/199,775 US201615199775A US2016314811A1 US 20160314811 A1 US20160314811 A1 US 20160314811A1 US 201615199775 A US201615199775 A US 201615199775A US 2016314811 A1 US2016314811 A1 US 2016314811A1
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 69
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 43
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 24
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 17
- UCNNJGDEJXIUCC-UHFFFAOYSA-L hydroxy(oxo)iron;iron Chemical compound [Fe].O[Fe]=O.O[Fe]=O UCNNJGDEJXIUCC-UHFFFAOYSA-L 0.000 claims abstract description 15
- 238000004544 sputter deposition Methods 0.000 claims abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 19
- 239000001301 oxygen Substances 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 238000013459 approach Methods 0.000 description 18
- 230000003247 decreasing effect Effects 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0688—Cermets, e.g. mixtures of metal and one or more of carbides, nitrides, oxides or borides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/658—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing oxygen, e.g. molecular oxygen or magnetic oxide
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
Definitions
- the present invention relates to magnetic media, and more particular, this invention relates to a magnetic medium having an onset layer.
- a magnetic storage medium includes a substrate; an onset layer formed above the substrate, the onset layer comprising ruthenium and titanium oxide.
- a deposition thickness of the onset layer is between about 2 angstroms and about 8 angstroms.
- a titanium oxide concentration in the onset layer is between about 4.0 molecular % and about 12 molecular %.
- a magnetic oxide layer is formed directly on the onset layer.
- the onset layer is formed directly on a ruthenium underlayer stack having at least one layer of ruthenium formed under a relatively higher pressure and at least one layer of ruthenium formed under a relatively lower pressure.
- a method includes sputtering using a target of ruthenium and titanium oxide for forming an onset layer above a substrate, the onset layer comprising ruthenium and titanium oxide; and forming a magnetic oxide layer directly on the onset layer.
- any of these embodiments may be implemented in or for a magnetic data storage system such as a disk drive system, which may include a magnetic head, a drive mechanism for passing a magnetic medium (e.g., hard disk) over the magnetic head, and a controller electrically coupled to the magnetic head.
- a magnetic data storage system such as a disk drive system, which may include a magnetic head, a drive mechanism for passing a magnetic medium (e.g., hard disk) over the magnetic head, and a controller electrically coupled to the magnetic head.
- a magnetic data storage system such as a disk drive system, which may include a magnetic head, a drive mechanism for passing a magnetic medium (e.g., hard disk) over the magnetic head, and a controller electrically coupled to the magnetic head.
- a magnetic medium e.g., hard disk
- FIG. 1 is a simplified drawing of a magnetic recording disk drive system.
- FIG. 2 is a schematic representation of layers of a magnetic storage medium, according to one embodiment.
- FIG. 3 is a flowchart showing a method according to one embodiment.
- a magnetic storage medium comprises a substrate; an onset layer formed above the substrate, the onset layer comprising ruthenium and titanium oxide; and a magnetic oxide layer formed directly on the onset layer.
- a magnetic storage medium comprises a substrate; an onset layer formed above the substrate, the onset layer comprising ruthenium and titanium oxide, wherein a deposition thickness of the onset layer is between about 2 angstroms and about 8 angstroms, wherein a titanium oxide concentration in the onset layer is between about 4 molecular % and about 12 molecular %; and a magnetic oxide layer formed directly, on the onset layer.
- the onset layer is formed directly on a ruthenium underlayer stack having at least one layer of ruthenium formed under a relatively higher pressure and at least one layer of ruthenium formed under a relatively lower pressure.
- the onset layer causes the medium to exhibit an at least 0.2 orders of magnitude lower bit error a than an otherwise identical magnetic storage medium not having the onset layer.
- a method comprises sputtering using a target of ruthenium and titanium oxide for forming an onset layer above a substrate, the onset layer comprising ruthenium and titanium oxide; and forming a magnetic oxide layer directly on the onset layer.
- a system in yet another general embodiment, includes a magnetic storage medium, at least one head for reading from and/or writing to the magnetic medium, a slider for supporting the at least on head, and a control unit coupled to the at least one head for controlling operation of the at least one head.
- the magnetic storage medium comprises a substrate, an onset layer comprising ruthenium and titanium oxide formed above the substrate, and a magnetic oxide layer formed directly on the onset layer.
- FIG. 1 there is shown a disk drive 100 in accordance with one embodiment of the present.
- at least one rotatable magnetic disk 112 is supported on a spindle 114 and rotated by a disk drive motor 118 .
- the magnetic recording on each disk is typically in the form of an annular pattern of concentric data tracks (not shown) on the disk 112 .
- At least one slider 113 is positioned near the disk 112 , each slider 113 supporting one or more magnetic read/write heads 121 . As the disk rotates, slider 113 is moved radially in and out over disk surface 122 so that heads 121 may access different tracks of the disk where desired data are recorded and/or to be written.
- Each slider 113 is attached to an actuator arm 119 by means of a suspension 115 .
- the suspension 115 provides a slight spring force which biases slider 113 against the disk surface 122 .
- Each actuator arm 119 is attached to an actuator 127 .
- the actuator 127 as shown in FIG. 1 may be a voice coil motor (VCM).
- the VCM comprises a coil movable within a fixed magnetic field, the direction and speed of the coil movements being controlled by the motor current signals supplied by cont oiler 129 .
- the rotation of disk 112 generates an air bearing between slider 113 and disk surface 122 which exerts an upward force or lift on the slider.
- the air bearing thus counter-balances the slight spring force of suspension 115 and supports slide 113 off and slightly above the disk surface by a s , substantially constant spacing during normal operation.
- the slider 113 may slide along the disk surface 122 .
- control unit 129 comprises logic control circuits, storage (e.g., memory), and a microprocessor.
- the control unit 129 generates control signals to control various system operations such as drive motor control signals on line 123 and head position and seek control signals on line 128 .
- the control signals on line 128 provide the desired current profiles to optimally move and position slider 113 to the desired data track on disk 112 .
- Read and write signals are communicated to and from read/write heads 121 by way of recording channel 125 .
- disk storage systems may contain a large number of disks and actuators, and each actuator may support a number of sliders.
- An interface may also be provided for communication between the disk drive and a host (integral or external) to send and receive the data and for controlling the operation of the disk drive and communicating the status of the disk drive to the host, all as will be understood by those of skill in the art.
- an inductive write head includes a coil layer embedded in one or more insulation layers (insulation stack), the insulation stack being located between first and second pole piece layers, A gap is formed between the first and second pole piece layers by a gap layer at an air bearing surface (ABS) of the write head.
- the pole piece layers may be connected at a back gap. Currents are conducted through the coil layer, which produce magnetic fields in the pole pieces. The magnetic fields fringe across the gap at the ABS for the purpose f writing bits of magnetic field information in tracks on moving media, such as in circular tracks on a rotating magnetic disk.
- the second pole piece layer has a pole tip portion which extends from the ABS to a flare point and a yoke portion which extends from the flare point to the back gap.
- the flare point is where the second pole piece begins to widen (flare) to fort the yoke.
- the placement of the flare point directly affects the magnitude of the magnetic field produced to write information on the recording medium.
- decoupling of the initial magnetic layer is useful for reducing the noise of perpendicular media.
- an onset layer comprised of Ru and TiO2 is introduced underneath the magnetic layer, according to some approaches.
- the onset layer comprising such materials as described previously has surprisingly been found to enhance grain decoupling of the magnetic layer at the initial growth stage, leading to a decreased media bit error rate and a reduction of magnetic core width.
- SFD switching field distribution
- SFD switching field distribution
- Recording parametric measurements indicate a 0.2 to 0.4 order improvement in bit error rate (BER) and adaptive format bit error rate (AF_BER), with about 1 nm to about 2 nm narrower magnetic core width (MCW). This result could not have been predicted.
- magnetic media including an onset layer has better recording characteristics than current film designs with another conventional structure. Moreover, addition of the onset layer produced a negligible change on overwrite (OW).
- OW overwrite
- FIG. 2 is a highly simplified schematic diagram of a cross-sectional view of a magnetic storage medium 200 , which extends in either direction horizontally from the view shown.
- the magnetic storage medium 200 includes a substrate 202 , an onset layer 204 comprising ruthenium and titanium oxide formed above the substrate 202 , and a magnetic oxide layer 206 formed directly on the onset layer 204 .
- the oxide layer 206 contacts the onset layer 204 , and may possibly be formed by oxidizing a portion of the onset layer 204 , thereby producing an amount of oxidation on an outside portion of the onset layer 204 during formation.
- the oxide layer 206 may be formed of another, distinct layer from the onset layer 204 , but is formed directly on the onset layer 204 .
- the oxide layer 206 may be comprised of titanium oxide, TiO x .
- a second oxide layer 226 may be formed above the oxide layer 206 .
- Additional layers may include an exchange control layer 228 , a cap layer 230 and an optional overcoat 232 e.g. of carbon.
- Each layer shown in FIG. 2 may be formed through sputtering, or any other technique known in the art. Each layer may have a different composition from those described below in one illustrative embodiment. Moreover, layers may be added and/or removed in some embodiments.
- the substrate 202 may be formed of a glass material, and may have a greater thickness than the other layers formed thereon.
- the adhesion layer 208 may be comprised of aluminum, titanium, or compositions thereof, etc., and may function to prevent the layers formed above the substrate 202 from “peeling off” during use.
- the soft underlayers 210 , 214 are separated by a ruthenium break layer 212 , and may, be comprised of cobalt, iron, tantalum, zirconium, or compositions thereof, etc., which provide a high moment.
- the ruthenium break layer 212 is also referred to as an anti-ferromagnetic coupling layer AFC).
- the seed layers 216 , 218 may be comprised of any suitable material as would be known in the art, such as nickel, tungsten, chromium, titanium, or combinations thereof, etc.
- the underlayers 220 , 222 , 224 may be comprised of any suitable material as would be known in the art, such as ruthenium, and may be formed under different pressures, such as a lower pressure for underlayer I, 220 , and higher pressures for underlayers II, III, 222 , 224 , respectively.
- a deposition thickness of the onset layer 204 may be between about 2.0 ⁇ and about 20 ⁇ , where “about X angstroms” indicates “X ⁇ 1.0 ⁇ .” In more approaches, a deposition thickness of the onset layer 204 may be between 5.0 ⁇ and about 8.0 ⁇ .
- a sputter chamber may be used to form at least a portion of the onset layer 204 .
- an oxygen concentration during formation of the onset layer 204 may be between about 0.01 vol % and about 0.50 vol % (volume percentage), where “about X vol %” indicates “X ⁇ 0.01.”
- at least some oxygen is present, e.g., there is not 0 vol % oxygen in the sputter chamber during onset layer 204 formation.
- a titanium oxide concentration in the onset layer 204 may be between about 4.0 molecular % and about 12 molecular %, where “about X molecular %” indicates “X ⁇ 1.0 molecular %.” In more approaches, a titanium concentration in the onset layer 204 may be between about 1.5 atomic % and about 4.0 atomic %.
- an oxygen concentration in the onset layer 204 may be between about 3.0 atomic % and about 8.0 atomic %.
- the onset layer 204 may be formed directly on a ruthenium underlayer stack (e.g., underlayers I, II, III, 220 , 222 , 224 ) having at least one layer of ruthenium formed under a relatively higher pressure and at least one layer of ruthenium formed under a relatively lower pressure, the pressures being relative to each other.
- a ruthenium underlayer stack e.g., underlayers I, II, III, 220 , 222 , 224 .
- the onset layer 204 may cause the magnetic storage medium 200 to exhibit an at least 0.2 order of magnitude lower bit error rate (BER) than an otherwise identical magnetic storage medium not having the onset layer 204 under identical conditions, e.g., if both the present medium and the comparative medium were written to and read by the same head under identical operating conditions.
- the onset layer may cause the magnetic storage medium 200 to exhibit an at least 0.3 order of magnitude lower BER than an otherwise identical magnetic storage medium not having the onset layer.
- the onset layer 204 may cause the medium 200 to exhibit the physical property of having a written magnetic core width that is at least about 1 nm narrower than would be exhibited by an otherwise identical magnetic storage medium not having the onset layer under identical writing conditions, e.g., if written by the same head at the same fly height.
- a deposition thickness of the onset layer 204 may be between about 5.0 ⁇ and about 10 ⁇ .
- a titanium oxide concentration in the onset layer 204 may be between about 4.0 molecular % and about 12 molecular %, and the onset layer 204 may cause the medium 200 to exhibit an at least 0.2 orders of magnitude lower BER than an otherwise identical magnetic storage medium not having the onset layer.
- a magnetic storage medium 200 comprises a substrate 202 , an onset layer 204 comprising ruthenium and titanium oxide formed above the substrate 202 , and a magnetic oxide layer 206 formed directly on the onset layer 204 .
- a deposition thickness of the onset layer 204 is between about 2.0 ⁇ and about 8.0 ⁇ , and a titanium oxide concentration in the onset layer 204 is between about 4 molecular % and about 12 molecular %.
- the onset layer 204 is formed directly on a ruthenium underlayer stack (e.g., underlayer I 220 , underlayer II 222 , underlayer 224 ) having at least two layers of ruthenium, one layer of ruthenium formed under a relatively higher pressure and one layer of ruthenium formed under a relatively lower pressure, the pressures being relative to each other.
- the onset layer 204 causes the magnetic storage medium 200 to exhibit an at least 0.2 orders of magnitude lower BER than an otherwise identical magnetic storage medium not having the onset layer under identical conditions, e.g., if both the present medium and the comparative medium were written and read by the same head under identical operating conditions.
- the onset layer 204 may cause the medium 200 to exhibit an at least 0.3 orders of magnitude lower BER than an otherwise identical magnetic storage medium not having the onset layer 204 .
- a sputter chamber may be used to form at least a portion of the onset layer 204 .
- an oxygen concentration during formation of the onset layer 204 may be between about 0.01 vol % and about 0.50 vol % (volume percentage), where “about X vol %” indicates “X ⁇ 0.01.”
- at least some oxygen is present , e.g., there is not 0 vol % oxygen in the sputter chamber during onset layer 204 formation.
- the onset layer 204 may cause the magnetic storage medium 200 to exhibit the physical property of having a written magnetic core width that is at least 1.0 nm narrower than would be exhibited by an otherwise identical magnetic storage medium not having the onset layer under identical writing conditions, e.g., if written by the same head at the same fly height.
- a method 300 is described according to one embodiment.
- the method 300 may be carried out in any desired environment, and may include aspects described in accordance with embodiments depicted in FIGS. 1-2 .
- an onset layer is formed above a substrate by sputtering using a target of ruthenium and titanium oxide.
- the onset layer comprises ruthenium and titanium oxide after the sputtering.
- the target may comprise less than about 8 atomic % ruthenium relative to the total atomic percentages of all components.
- a sputter chamber may be used to form at least a portion of the onset layer.
- oxygen and an inert gas are flowed during the sputtering, and a volumetric flow rate of the oxygen is between about 1.0% and about 4.0% of a total volumetric flow a e of the oxygen and the inert gas.
- the flowrates of oxygen and argon were 4.0 seem and 195 sccm, respectively.
- no oxygen may be flowed into the sputter chamber during formation of any other layers of a magnetic storage medium formed by the sputtering.
- a deposition thickness of the onset layer may b between about 5.0 ⁇ and about 10 ⁇ , preferably about 7.0 ⁇ .
- “about X atomic %” indicates “X ⁇ 1.0 atomic %.”
- a deposition thickness of the onset layer may be about 7.0 ⁇ .
- a titanium oxide concentration in the onset layer may be between about 4.0 molecular % and about 12 molecular %, titanium between about 1.5 atomic % and about 4.0 atomic %, and oxygen between about 3 atomic % and about 8 atomic %, etc.
- a magnetic oxide layer is formed directly on the onset layer.
- the oxide layer contacts the onset layer, and may possibly be formed by oxidizing a portion of the onset layer, thereby producing an amount of oxidation on an outside portion of the onset layer.
- the oxide layer may be formed of another, distinct layer from the onset layer, but is formed directly above the onset layer.
- a system includes a magnetic storage medium, at least one head for reading from and/or writing to the magnetic medium, a slider for supporting the at least on head, and a control unit coupled to the at least one head for controlling operation of the at least one head.
- the magnetic storage medium may include any of the properties and structures as described previously.
- the magnetic medium may comprise a substrate, an onset layer comprising ruthenium and titanium oxide formed above the substrate, and a magnetic oxide layer formed directly on the onset layer.
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Abstract
Description
- The present invention relates to magnetic media, and more particular, this invention relates to a magnetic medium having an onset layer.
- Developments have been made in the area of perpendicular magnetic recording media, with much of them focusing on increasing the recording density of the magnetic recording media by decreasing the bit error rate. A lower bit error rate can be achieved by decreasing the transition noise between adjacent bits, and the transition noise in turn can be decreased by increasing the magnetic decoupling between grains. Grains that are decoupled and magnetically isolated from one another can switch independently and may allow the media to form finer and narrower transitions. Therefore, it would be beneficial to the improvement of perpendicular recording media to magnetically decouple the magnetic grains of the magnetic layer of a magnetic recording medium.
- A magnetic storage medium according to one embodiment includes a substrate; an onset layer formed above the substrate, the onset layer comprising ruthenium and titanium oxide. A deposition thickness of the onset layer is between about 2 angstroms and about 8 angstroms. A titanium oxide concentration in the onset layer is between about 4.0 molecular % and about 12 molecular %. A magnetic oxide layer is formed directly on the onset layer. The onset layer is formed directly on a ruthenium underlayer stack having at least one layer of ruthenium formed under a relatively higher pressure and at least one layer of ruthenium formed under a relatively lower pressure.
- A method according to one embodiment includes sputtering using a target of ruthenium and titanium oxide for forming an onset layer above a substrate, the onset layer comprising ruthenium and titanium oxide; and forming a magnetic oxide layer directly on the onset layer.
- Any of these embodiments may be implemented in or for a magnetic data storage system such as a disk drive system, which may include a magnetic head, a drive mechanism for passing a magnetic medium (e.g., hard disk) over the magnetic head, and a controller electrically coupled to the magnetic head.
- Other aspects and advantages of the present invention will become apparent from the following detailed description, which, when taken in conjunction with the drawings, illustrate by way of example the principles of the invention.
- For a fuller understanding of the nature and advantages of the present invention, as well as the preferred mode of use, reference should be made to the following detailed description read in conjunction with the accompanying drawings.
-
FIG. 1 is a simplified drawing of a magnetic recording disk drive system. -
FIG. 2 is a schematic representation of layers of a magnetic storage medium, according to one embodiment. -
FIG. 3 is a flowchart showing a method according to one embodiment. - The following description is made for the purpose of illustrating the general principles of the present invention and is not meant to limit the inventive concepts claimed herein. Further, particular features described herein can be used in combination with other described features in each of the various possible combinations and permutations.
- Unless otherwise specifically defined herein, all terms are to be given their broadest possible interpretation including meanings implied from the specification as well as meanings understood by those skilled in the art and/or as defined in dictionaries, treatises, etc.
- It must also be noted that, as used in the specification and the appended claims, the singular forms “a,” “an” “and” the include plural referents unless otherwise specified.
- The following description discloses several preferred embodiments of disk-based storage systems and/or related systems and methods, as well as operation and/or component parts thereof.
- In one general embodiment, a magnetic storage medium comprises a substrate; an onset layer formed above the substrate, the onset layer comprising ruthenium and titanium oxide; and a magnetic oxide layer formed directly on the onset layer.
- In another general embodiment, a magnetic storage medium comprises a substrate; an onset layer formed above the substrate, the onset layer comprising ruthenium and titanium oxide, wherein a deposition thickness of the onset layer is between about 2 angstroms and about 8 angstroms, wherein a titanium oxide concentration in the onset layer is between about 4 molecular % and about 12 molecular %; and a magnetic oxide layer formed directly, on the onset layer. The onset layer is formed directly on a ruthenium underlayer stack having at least one layer of ruthenium formed under a relatively higher pressure and at least one layer of ruthenium formed under a relatively lower pressure. In a version of this embodiment, the onset layer causes the medium to exhibit an at least 0.2 orders of magnitude lower bit error a than an otherwise identical magnetic storage medium not having the onset layer.
- In another general embodiment, a method comprises sputtering using a target of ruthenium and titanium oxide for forming an onset layer above a substrate, the onset layer comprising ruthenium and titanium oxide; and forming a magnetic oxide layer directly on the onset layer.
- In yet another general embodiment, a system includes a magnetic storage medium, at least one head for reading from and/or writing to the magnetic medium, a slider for supporting the at least on head, and a control unit coupled to the at least one head for controlling operation of the at least one head. The magnetic storage medium comprises a substrate, an onset layer comprising ruthenium and titanium oxide formed above the substrate, and a magnetic oxide layer formed directly on the onset layer.
- Referring now to
FIG. 1 , there is shown a disk drive 100 in accordance with one embodiment of the present. As shown inFIG. 1 , at least one rotatable magnetic disk 112 is supported on a spindle 114 and rotated by a disk drive motor 118. The magnetic recording on each disk is typically in the form of an annular pattern of concentric data tracks (not shown) on the disk 112. - At least one slider 113 is positioned near the disk 112, each slider 113 supporting one or more magnetic read/write heads 121. As the disk rotates, slider 113 is moved radially in and out over disk surface 122 so that heads 121 may access different tracks of the disk where desired data are recorded and/or to be written. Each slider 113 is attached to an actuator arm 119 by means of a suspension 115. The suspension 115 provides a slight spring force which biases slider 113 against the disk surface 122. Each actuator arm 119 is attached to an actuator 127. The actuator 127 as shown in
FIG. 1 may be a voice coil motor (VCM). The VCM comprises a coil movable within a fixed magnetic field, the direction and speed of the coil movements being controlled by the motor current signals supplied by cont oiler 129. - During operation of the disk storage system, the rotation of disk 112 generates an air bearing between slider 113 and disk surface 122 which exerts an upward force or lift on the slider. The air bearing thus counter-balances the slight spring force of suspension 115 and supports slide 113 off and slightly above the disk surface by a s , substantially constant spacing during normal operation. Note that in some embodiments, the slider 113 may slide along the disk surface 122.
- The various components of the disk storage system are con led in operation by control signals generated by control unit 129, such as access control signals and internal clock signals. Typically, control unit 129 comprises logic control circuits, storage (e.g., memory), and a microprocessor. The control unit 129 generates control signals to control various system operations such as drive motor control signals on line 123 and head position and seek control signals on line 128. The control signals on line 128 provide the desired current profiles to optimally move and position slider 113 to the desired data track on disk 112. Read and write signals are communicated to and from read/write heads 121 by way of recording channel 125.
- The above description of a typical magnetic disk storage system, and the accompanying illustration of
FIG. 1 is for representation purposes only. It should be apparent that disk storage systems may contain a large number of disks and actuators, and each actuator may support a number of sliders. - An interface may also be provided for communication between the disk drive and a host (integral or external) to send and receive the data and for controlling the operation of the disk drive and communicating the status of the disk drive to the host, all as will be understood by those of skill in the art.
- In a typical head, an inductive write head includes a coil layer embedded in one or more insulation layers (insulation stack), the insulation stack being located between first and second pole piece layers, A gap is formed between the first and second pole piece layers by a gap layer at an air bearing surface (ABS) of the write head. The pole piece layers may be connected at a back gap. Currents are conducted through the coil layer, which produce magnetic fields in the pole pieces. The magnetic fields fringe across the gap at the ABS for the purpose f writing bits of magnetic field information in tracks on moving media, such as in circular tracks on a rotating magnetic disk.
- The second pole piece layer has a pole tip portion which extends from the ABS to a flare point and a yoke portion which extends from the flare point to the back gap. The flare point is where the second pole piece begins to widen (flare) to fort the yoke. The placement of the flare point directly affects the magnitude of the magnetic field produced to write information on the recording medium.
- It has been surprisingly found that by adding an onset layer above a substrate and below an oxide layer of a magnetic storage medium, such as a magnetic disk, the performance of the magnetic storage medium can be increased.
- For magnetic disks, according to some embodiments, decoupling of the initial magnetic layer is useful for reducing the noise of perpendicular media. In order to accomplish this decoupling effect, an onset layer comprised of Ru and TiO2 is introduced underneath the magnetic layer, according to some approaches. The onset layer comprising such materials as described previously has surprisingly been found to enhance grain decoupling of the magnetic layer at the initial growth stage, leading to a decreased media bit error rate and a reduction of magnetic core width. In addition, according to some approaches, by introducing the onset layer underneath the magnetic oxide layer, an increased switching field distribution, SFD, may surprisingly be achieved, indicating more decoupling of the magnetic grains. Recording parametric measurements indicate a 0.2 to 0.4 order improvement in bit error rate (BER) and adaptive format bit error rate (AF_BER), with about 1 nm to about 2 nm narrower magnetic core width (MCW). This result could not have been predicted.
- Referring to Table 1 below, it can be seen that magnetic media including an onset layer, according to one embodiment, has better recording characteristics than current film designs with another conventional structure. Moreover, addition of the onset layer produced a negligible change on overwrite (OW).
-
TABLE 1 Recording Parametric Measurements Sample Description SFD BER AF_BER MCW OW 1 Current 2425 −5.54 −5.09 80.9 −38.8 Film Design 2 Design w/ 2550 −5.75 −5.55 79.3 −36.9 Onset Layer - Now referring to
FIG. 2 , in one embodiment, a magnetic storage medium 200 (e.g., a magnetic disk in a hard disk drive (HDD), etc.) is described.FIG. 2 is a highly simplified schematic diagram of a cross-sectional view of amagnetic storage medium 200, which extends in either direction horizontally from the view shown. Themagnetic storage medium 200 includes asubstrate 202, anonset layer 204 comprising ruthenium and titanium oxide formed above thesubstrate 202, and amagnetic oxide layer 206 formed directly on theonset layer 204. By directly on theonset layer 204, what is meant is that theoxide layer 206 contacts theonset layer 204, and may possibly be formed by oxidizing a portion of theonset layer 204, thereby producing an amount of oxidation on an outside portion of theonset layer 204 during formation. In another approach, theoxide layer 206 may be formed of another, distinct layer from theonset layer 204, but is formed directly on theonset layer 204. - In some embodiments, the
oxide layer 206 may be comprised of titanium oxide, TiOx. Moreover, asecond oxide layer 226 may be formed above theoxide layer 206. Additional layers may include anexchange control layer 228, acap layer 230 and anoptional overcoat 232 e.g. of carbon. - Each layer shown in
FIG. 2 may be formed through sputtering, or any other technique known in the art. Each layer may have a different composition from those described below in one illustrative embodiment. Moreover, layers may be added and/or removed in some embodiments. Thesubstrate 202 may be formed of a glass material, and may have a greater thickness than the other layers formed thereon. Theadhesion layer 208 may be comprised of aluminum, titanium, or compositions thereof, etc., and may function to prevent the layers formed above thesubstrate 202 from “peeling off” during use. Thesoft underlayers ruthenium break layer 212, and may, be comprised of cobalt, iron, tantalum, zirconium, or compositions thereof, etc., which provide a high moment. Theruthenium break layer 212 is also referred to as an anti-ferromagnetic coupling layer AFC). The seed layers 216, 218 may be comprised of any suitable material as would be known in the art, such as nickel, tungsten, chromium, titanium, or combinations thereof, etc. Theunderlayers - According to some approaches, a deposition thickness of the
onset layer 204 may be between about 2.0 Å and about 20 Å, where “about X angstroms” indicates “X±1.0 Å.” In more approaches, a deposition thickness of theonset layer 204 may be between 5.0 Å and about 8.0 Å. - In more embodiments, a sputter chamber may be used to form at least a portion of the
onset layer 204. In the sputter chamber, an oxygen concentration during formation of theonset layer 204 may be between about 0.01 vol % and about 0.50 vol % (volume percentage), where “about X vol %” indicates “X±0.01.” In addition, at least some oxygen is present, e.g., there is not 0 vol % oxygen in the sputter chamber duringonset layer 204 formation. - According to some more approaches, a titanium oxide concentration in the
onset layer 204 may be between about 4.0 molecular % and about 12 molecular %, where “about X molecular %” indicates “X±1.0 molecular %.” In more approaches, a titanium concentration in theonset layer 204 may be between about 1.5 atomic % and about 4.0 atomic %. - In more approaches, an oxygen concentration in the
onset layer 204 may be between about 3.0 atomic % and about 8.0 atomic %. - According to some embodiments, the
onset layer 204 may be formed directly on a ruthenium underlayer stack (e.g., underlayers I, II, III, 220, 222, 224) having at least one layer of ruthenium formed under a relatively higher pressure and at least one layer of ruthenium formed under a relatively lower pressure, the pressures being relative to each other. - In more embodiments, the
onset layer 204 may cause themagnetic storage medium 200 to exhibit an at least 0.2 order of magnitude lower bit error rate (BER) than an otherwise identical magnetic storage medium not having theonset layer 204 under identical conditions, e.g., if both the present medium and the comparative medium were written to and read by the same head under identical operating conditions. In further embodiments, the onset layer may cause themagnetic storage medium 200 to exhibit an at least 0.3 order of magnitude lower BER than an otherwise identical magnetic storage medium not having the onset layer. - According to some approaches, the
onset layer 204 may cause the medium 200 to exhibit the physical property of having a written magnetic core width that is at least about 1 nm narrower than would be exhibited by an otherwise identical magnetic storage medium not having the onset layer under identical writing conditions, e.g., if written by the same head at the same fly height. - In some approaches, a deposition thickness of the
onset layer 204 may be between about 5.0 Å and about 10 Å. In addition., a titanium oxide concentration in theonset layer 204 may be between about 4.0 molecular % and about 12 molecular %, and theonset layer 204 may cause the medium 200 to exhibit an at least 0.2 orders of magnitude lower BER than an otherwise identical magnetic storage medium not having the onset layer. - With continued reference with
FIG. 2 , in another embodiment, amagnetic storage medium 200 comprises asubstrate 202, anonset layer 204 comprising ruthenium and titanium oxide formed above thesubstrate 202, and amagnetic oxide layer 206 formed directly on theonset layer 204. A deposition thickness of theonset layer 204 is between about 2.0 Å and about 8.0 Å, and a titanium oxide concentration in theonset layer 204 is between about 4 molecular % and about 12 molecular %. Also, theonset layer 204 is formed directly on a ruthenium underlayer stack (e.g., underlayer I 220, underlayer II 222, underlayer 224) having at least two layers of ruthenium, one layer of ruthenium formed under a relatively higher pressure and one layer of ruthenium formed under a relatively lower pressure, the pressures being relative to each other. In addition, theonset layer 204 causes themagnetic storage medium 200 to exhibit an at least 0.2 orders of magnitude lower BER than an otherwise identical magnetic storage medium not having the onset layer under identical conditions, e.g., if both the present medium and the comparative medium were written and read by the same head under identical operating conditions. In some additional approaches, theonset layer 204 may cause the medium 200 to exhibit an at least 0.3 orders of magnitude lower BER than an otherwise identical magnetic storage medium not having theonset layer 204. - According to some approaches, a sputter chamber may be used to form at least a portion of the
onset layer 204. In the sputter chamber, an oxygen concentration during formation of theonset layer 204 may be between about 0.01 vol % and about 0.50 vol % (volume percentage), where “about X vol %” indicates “X±0.01.” In addition, at least some oxygen is present , e.g., there is not 0 vol % oxygen in the sputter chamber duringonset layer 204 formation. - In more approaches, the
onset layer 204 may cause themagnetic storage medium 200 to exhibit the physical property of having a written magnetic core width that is at least 1.0 nm narrower than would be exhibited by an otherwise identical magnetic storage medium not having the onset layer under identical writing conditions, e.g., if written by the same head at the same fly height. - Now referring to
FIG. 3 , amethod 300 is described according to one embodiment. Themethod 300 may be carried out in any desired environment, and may include aspects described in accordance with embodiments depicted inFIGS. 1-2 . -
operation 302, an onset layer is formed above a substrate by sputtering using a target of ruthenium and titanium oxide. The onset layer comprises ruthenium and titanium oxide after the sputtering. - In one embodiment, the target may comprise less than about 8 atomic % ruthenium relative to the total atomic percentages of all components.
- In some approaches, a sputter chamber may be used to form at least a portion of the onset layer. In the sputter chamber, oxygen and an inert gas are flowed during the sputtering, and a volumetric flow rate of the oxygen is between about 1.0% and about 4.0% of a total volumetric flow a e of the oxygen and the inert gas. For example, in one experiment, the flowrates of oxygen and argon (as the inert gas) were 4.0 seem and 195 sccm, respectively.
- In more approaches, no oxygen may be flowed into the sputter chamber during formation of any other layers of a magnetic storage medium formed by the sputtering.
- According to some approaches, a deposition thickness of the onset layer may b between about 5.0 Å and about 10 Å, preferably about 7.0 Å. In addition, “about X atomic %” indicates “X±1.0 atomic %.” According to one preferred embodiment, a deposition thickness of the onset layer may be about 7.0 Å.
- In some approaches, a titanium oxide concentration in the onset layer may be between about 4.0 molecular % and about 12 molecular %, titanium between about 1.5 atomic % and about 4.0 atomic %, and oxygen between about 3 atomic % and about 8 atomic %, etc.
- In
operation 304, a magnetic oxide layer is formed directly on the onset layer. By directly on the onset layer, what is meant is that the oxide layer contacts the onset layer, and may possibly be formed by oxidizing a portion of the onset layer, thereby producing an amount of oxidation on an outside portion of the onset layer. In another approach, the oxide layer may be formed of another, distinct layer from the onset layer, but is formed directly above the onset layer. - According to another embodiment, a system includes a magnetic storage medium, at least one head for reading from and/or writing to the magnetic medium, a slider for supporting the at least on head, and a control unit coupled to the at least one head for controlling operation of the at least one head. The magnetic storage medium may include any of the properties and structures as described previously. For example, the magnetic medium may comprise a substrate, an onset layer comprising ruthenium and titanium oxide formed above the substrate, and a magnetic oxide layer formed directly on the onset layer.
- While various embodiments have been described above, it should be understood that they have been presented by way of example only, and not limitation. Thus, the breadth and scope of an embodiment of the present invention should not be limited by any of the above-described exemplary embodiments, but should be defined only in accordance with the following claims and their equivalents.
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US6146755A (en) | 1998-10-15 | 2000-11-14 | International Business Machines Corporation | High density magnetic recording medium utilizing selective growth of ferromagnetic material |
JP4757400B2 (en) | 2001-05-09 | 2011-08-24 | 昭和電工株式会社 | Perpendicular magnetic recording medium and magnetic recording / reproducing apparatus |
US7842409B2 (en) * | 2001-11-30 | 2010-11-30 | Seagate Technology Llc | Anti-ferromagnetically coupled perpendicular magnetic recording media with oxide |
JP2004220737A (en) | 2003-01-17 | 2004-08-05 | Fuji Electric Device Technology Co Ltd | Perpendicular magnetic recording medium and its manufacturing method |
JP4188196B2 (en) | 2003-10-06 | 2008-11-26 | 株式会社東芝 | Perpendicular magnetic recording medium, manufacturing method thereof, and magnetic recording / reproducing apparatus using the same |
JP2005190517A (en) | 2003-12-24 | 2005-07-14 | Hitachi Global Storage Technologies Netherlands Bv | Perpendicular magnetic recording medium and magnetic storage device |
JP4255826B2 (en) * | 2003-12-26 | 2009-04-15 | 株式会社東芝 | Magnetic recording medium, magnetic recording medium manufacturing method, and magnetic recording / reproducing apparatus |
JP4874526B2 (en) | 2004-03-25 | 2012-02-15 | 株式会社東芝 | Magnetic recording medium, method of manufacturing magnetic recording medium, and magnetic recording / reproducing apparatus |
JP2006085742A (en) * | 2004-09-14 | 2006-03-30 | Hitachi Global Storage Technologies Netherlands Bv | Perpendicular magnetic recording medium and its manufacturing method |
US7691499B2 (en) * | 2006-04-21 | 2010-04-06 | Seagate Technology Llc | Corrosion-resistant granular magnetic media with improved recording performance and methods of manufacturing same |
US20070292721A1 (en) * | 2006-04-25 | 2007-12-20 | Berger Andreas K | Perpendicular magnetic recording medium |
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US8025993B2 (en) * | 2007-02-23 | 2011-09-27 | Seagate Technology Llc | Recording media interlayer structure |
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JP2009059431A (en) | 2007-08-31 | 2009-03-19 | Showa Denko Kk | Magnetic recording medium and magnetic recording and reproducing apparatus |
WO2009035411A1 (en) | 2007-09-12 | 2009-03-19 | Agency For Science, Technology And Research | Magnetic recording media with a synthetic nucleation layer and method of manufacture |
JP2009116952A (en) | 2007-11-06 | 2009-05-28 | Hitachi Global Storage Technologies Netherlands Bv | Perpendicular magnetic recording medium, and magnetic memory using the same |
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US8114470B2 (en) * | 2008-11-26 | 2012-02-14 | Seagate Technology Llc | Reduced spacing recording apparatus |
US8202636B2 (en) * | 2008-12-23 | 2012-06-19 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic recording capping layer with multiple layers for controlling anisotropy for perpendicular recording media |
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