US20160238903A1 - Liquid crystal display device - Google Patents

Liquid crystal display device Download PDF

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Publication number
US20160238903A1
US20160238903A1 US15/040,671 US201615040671A US2016238903A1 US 20160238903 A1 US20160238903 A1 US 20160238903A1 US 201615040671 A US201615040671 A US 201615040671A US 2016238903 A1 US2016238903 A1 US 2016238903A1
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Prior art keywords
liquid crystal
common metal
signal line
common
display device
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Abandoned
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US15/040,671
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English (en)
Inventor
Masateru Morimoto
Saori Sugiyama
Motoharu Miyamoto
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Japan Display Inc
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Japan Display Inc
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Assigned to JAPAN DISPLAY INC. reassignment JAPAN DISPLAY INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MIYAMOTO, MOTOHARU, SUGIYAMA, SAORI, MORIMOTO, MASATERU
Publication of US20160238903A1 publication Critical patent/US20160238903A1/en
Priority to US15/916,625 priority Critical patent/US10725345B2/en
Priority to US16/909,255 priority patent/US11262624B2/en
Priority to US17/579,639 priority patent/US11567374B2/en
Priority to US18/092,482 priority patent/US11762244B2/en
Priority to US18/449,752 priority patent/US12228827B2/en
Priority to US19/021,422 priority patent/US20250155751A1/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

Definitions

  • the present invention relates to a liquid crystal display device, and to a high contrast liquid crystal display device that prevents light leakage specifically in black display.
  • a liquid crystal display device has a liquid crystal display panel including a TFT substrate, a counter substrate disposed as opposed to the TFT substrate, and a liquid crystal sandwiched between the TFT substrate and the counter substrate.
  • the TET substrate includes pixels in a matrix configuration, each of which has a pixel electrode, a thin film transistor (TFT), and other components. The light transmittance of liquid crystal molecules is controlled for each pixel to form images.
  • Japanese Unexamined Patent Application Publication No. 2006-23458 describes a configuration in which a projection is disposed on a pixel having no columnar spacer and thus the initial alignment of liquid crystal molecules is made uniform.
  • alignment films are used for the initial alignment of liquid crystal molecules.
  • the alignment axis of the alignment film is different from the orientation of a picture signal line, for example, the polarization direction of light reflected off the side surface of the picture signal line is changed. This reflected light is not blocked enough. Consequently, contrast is decreased.
  • the present invention is to solve and overcome the problems.
  • a first aspect of the present invention is a liquid crystal display device including: a TET substrate having a scanning line extending in a first direction and arrayed in a second direction, a picture signal line extending in the second direction and arrayed in the first direction, a pixel electrode formed in a region surrounded by the scanning line and the picture signal line, and a common electrode formed as opposed to the pixel electrode through an insulating film; a counter substrate disposed as opposed to the TFT substrate and having a columnar spacer; and a liquid crystal sandwiched between the TFT substrate and the counter substrate.
  • a common metal interconnection is formed to cover the picture signal line or the scanning line, and the common metal interconnection is stacked on the common electrode.
  • a through hole is formed on the common metal interconnection.
  • a tip end of the columnar spacer is disposed inside the through hole.
  • a second aspect is a liquid crystal display device including: a TFT substrate including a scanning line extending in a first direction and arrayed in a second direction, a picture signal line extending in the second direction and arrayed in the first direction, a pixel electrode formed in a region surrounded by the scanning line and the picture signal line, and a common electrode formed as opposed to the pixel electrode through a first insulating film; a counter substrate disposed as opposed to the TFT substrate and having a columnar spacer; and a liquid crystal sandwiched between the TET substrate and the counter substrate.
  • the pixel electrode, the first insulating film, and the common electrode are formed on a second insulating film.
  • a contact hole for connecting the pixel electrode to a TFT is formed on the second insulating film.
  • a common metal interconnection is formed to cover the picture signal line or the scanning line, and the common metal interconnection is stacked on the common electrode.
  • a through hole is formed on the common metal interconnection.
  • the columnar spacer is disposed inside the through hole. Near a region in which the contact hole is formed, the common metal interconnection covering the picture signal line is formed on every other picture signal line in the first direction.
  • a common metal interconnection is formed to cover the picture signal line, and the common metal interconnection is stacked on the common electrode.
  • a width of the common electrode is wider than a width of the picture signal line.
  • a thickness of the picture signal line is greater than a thickness of the common electrode.
  • FIG. 1 is a cross sectional view of a liquid crystal display device to which an embodiment of the present invention is applied;
  • FIG. 2 is a plan view of pixels according to a first embodiment
  • FIG. 3 is a cross sectional view taken along line A-A in FIG. 2 ;
  • FIG. 6 is a cross sectional view of an effect according to an embodiment of the present invention in the case in which a TFT substrate is greatly displaced from a counter substrate;
  • FIG. 7 is a schematic diagram of the reflection of polarized light in the case in which an alignment axis is in parallel with a reflection plane;
  • FIG. 8 is a schematic diagram of the reflection of polarized light in the case in which the alignment axis is not in parallel with the reflection plane;
  • FIG. 9 is a cross sectional view of a second embodiment
  • FIG. 10 is a cross sectional view of the relationship between the width of a picture signal line and the width of a common metal interconnection according to an embodiment of the present invention.
  • FIG. 11 is a cross sectional view in the case in which the cross section of the common metal interconnection is in a trapezoid
  • FIG. 12 is a cross sectional view of another example of the common metal interconnection
  • FIG. 13 is a cross sectional view of still another example of the common metal interconnection
  • FIG. 14 is a cross sectional view of still another example of the common metal interconnection
  • FIG. 15 is a cross sectional view of a third embodiment
  • FIG. 16 is a cross sectional view of another example in the case in which the cross section of the common metal interconnection is in a trapezoid;
  • FIG. 17 is a cross sectional view of another example of the common metal interconnection
  • FIG. 18 is a cross sectional view of still another example of the common metal interconnection
  • FIG. 19 is a cross sectional view in the case in which the TFT substrate is not displaced from the counter substrate;
  • FIG. 20 is a cross sectional view in the case in which the TFT substrate is displaced from the counter substrate to cause color mixture
  • FIG. 21 is a cross sectional view in the case in which the TET substrate is not displaced from the counter substrate in an embodiment of the present invention.
  • FIG. 22 is a cross sectional view of an effect according to an embodiment of the present invention.
  • FIG. 23 is a cross sectional view of another form according to an embodiment of the present invention.
  • FIG. 24 is a plan view of a fifth embodiment
  • FIG. 25 is a plan view of another form of the fifth embodiment.
  • FIG. 26 is a plan view of a first example according to a sixth embodiment.
  • FIG. 27 is a plan view of a second example according to the sixth embodiment.
  • FIG. 28 is a plan view of a third example according to the sixth embodiment.
  • FIG. 29 is a plan view of a fourth example according to the sixth embodiment.
  • FIG. 30 is a plan view of a fifth example according to the sixth embodiment.
  • FIG. 31 is a cross sectional view taken along line C-C in FIG. 26 ;
  • FIG. 32 is a cross sectional view taken along line D-D in FIG. 28 ;
  • FIG. 33 is a plan view of a seventh embodiment
  • FIG. 34 is a cross sectional view taken along line E-E in FIG. 33 ;
  • FIG. 35 is a plan view of an eighth embodiment.
  • FIG. 36 is a cross sectional view taken along line F-F in FIG. 35 .
  • Liquid crystal display devices have problems of viewing angles. In liquid crystal display devices in IPS (In Plane Switching) modes, liquid crystal molecules are rotated to control transmittances. The devices in the IPS modes have excellent viewing angle characteristics. There are various IPS modes. For example, in a liquid crystal display device in a present mainstream IPS mode, a common electrode is formed flat. An insulating film is disposed on the common electrode. A comb teeth shaped (line shaped) pixel electrode is disposed on the insulating film. Liquid crystal molecules are aligned (rotated) using an electric field generated between the pixel electrode and the common electrode. In the device in the IPS mode, transmittances can be relatively increased. A configuration is also possible in which the pixel electrode is formed flat and the common electrode is a line shaped electrode.
  • FIG. 1 is a cross sectional view of a liquid crystal display panel in such an IPS mode according to an embodiment.
  • a TFT (a thin film transistor) in FIG. 1 is a so-called top gate TFT, using low temperature poly-silicon (LTPS) for a semiconductor.
  • LTPS low temperature poly-silicon
  • a so-called bottom gate TFT is often used.
  • a top gate TFT is taken and described.
  • the embodiment of the present invention is also applicable to the case of using a bottom gate TFT.
  • a first base film 101 made of silicon nitride and a second base film 102 made of silicon oxide (SiO 2 ) are formed by chemical vapor deposition (CVD).
  • the first base film 101 and the second base film 102 are responsible for preventing a semiconductor layer 103 from being contaminated by impurities derived from the TFT substrate 100 .
  • the semiconductor layer 103 is formed on the second base film 102 .
  • An a-Si film is formed on the second base film 102 by CVD.
  • This a-Si film is converted into a polysilicon (poly-Si) film by laser annealing.
  • This poly-Si film is patterned by photolithography to form an island-like semiconductor film. Consequently, the semiconductor layer 103 is formed.
  • a gate insulating film 104 is formed on the semiconductor film 103 .
  • This gate insulating film 104 is a silicon oxide film made of tetraethoxysilane (TEOS). This film is also formed by CVD.
  • a gate electrode 105 is formed on the gate insulating film 104 .
  • a scanning line 10 also functions as the gate electrode 105 .
  • the gate electrode 105 is made of a refractory metal such as a molybdenum tungsten (MoW) film or an alloy of refractory metals.
  • MoW molybdenum tungsten
  • a stacked film formed of a low resistance metal such as aluminum (Al) and copper (Cu) and a refractory metal is used.
  • an interlayer insulating film 106 is formed of silicon nitride and silicon oxide to cover the gate electrode 105 .
  • the interlayer insulating film 106 is responsible for insulating the gate electrode 105 from a contact electrode 107 .
  • a contact hole 120 is formed on the interlayer insulating film 106 and the gate insulating film 104 to connect a source S of the semiconductor layer 103 to the contact electrode 107 .
  • the contact hole 120 is formed on the interlayer insulating film 106 and the gate insulating film 104 by photolithography at the same time.
  • the contact electrode 107 is formed on the interlayer insulating film 106 .
  • the contact electrode 107 is connected to a pixel electrode 112 through a contact hole 130 .
  • a drain D of the TFT is connected to a picture signal line 20 through the contact hole.
  • the contact electrode 107 and the picture signal line 20 are formed on the same layer at the same time.
  • Al or an Al alloy for example, is used for the contact electrode 107 and the picture signal line 20 for decreasing their resistance.
  • Al or an Al alloy causes hillocks, or Al is diffused to other layers.
  • a structure is provided in which Al or an Al alloy is sandwiched between a barrier layer made of a refractory metal such as Ti and Mo, not illustrated, and a cap layer.
  • a portion connected to the drain D is sometimes referred to as a drain electrode and a portion connected to the contact electrode 107 is sometimes referred to as a source electrode.
  • the source and drain of the TFT are appropriately switched depending on a voltage applied to the TFT.
  • An organic passivation film 109 is formed to cover the contact electrode 107 .
  • the organic passivation film 109 is formed of a photosensitive acrylic resin.
  • the organic passivation film 109 can be formed of a silicone resin, epoxy resin, and polyimide resin, for example, in addition to an acrylic resin. Since the organic passivation film 109 functions as a planarization film, the organic passivation film 109 is formed thick.
  • the film thickness of the organic passivation film 109 ranges from 1 to 4 ⁇ m. In many cases, the film thickness is about 2 to 3 ⁇ m.
  • An inorganic passivation film may be provided between the organic passivation film 109 and the contact electrode 107 .
  • the contact hole 130 is formed on the organic passivation film 109 .
  • the organic passivation film 109 is made of a photosensitive resin. Consequently, after a photosensitive resin is coated, this resin is exposed to light, and then only portions exposed to light are dissolved with a specific developer. In other words, the use of a photosensitive resin can omit the formation of a photoresist.
  • the contact hole 130 is formed on the photosensitive resin, the photosensitive resin is baked at a temperature of about 230° C., and then the organic passivation film 109 is completed.
  • ITO indium tin oxide
  • a common electrode 110 is formed by sputtering. ITO is patterned in such a manner that ITO is removed from the contact hole 130 and regions around the contact hole 130 .
  • the common electrode 110 can be formed flat in common to the pixels.
  • silicon nitride to be a capacitive insulating film 111 is formed on throughout the surface by CVD. After the capacitive insulating film 111 is formed, in the contact hole 130 , a contact hole for conducting electricity from the contact electrode 107 to the pixel electrode 112 is formed on the capacitive insulating film 111 .
  • ITO is formed by sputtering, and then patterned to form the pixel electrode 112 .
  • an alignment film material is coated by a method such as flexographic printing or ink jet, and then baked to from an alignment film 113 .
  • photo-alignment by polarized ultraviolet rays is used, in addition to rubbing.
  • the counter substrate 200 is disposed on the opposite side of the liquid crystal layer 300 .
  • color filters 201 are formed on the surface of the counter substrate 200 facing the liquid crystal layer.
  • the color filter 201 includes red, green, and blue color filters formed for each pixel.
  • color images are formed.
  • a light shielding film (a black matrix) 202 is formed between the color filters 201 to improve the contrast of images.
  • the light shielding film 202 is also responsible for shielding TFTs from light to prevent a photocurrent from being carried through the TFTs.
  • An overcoat film 203 is formed to cover the color filter 201 and the black matrix 202 .
  • the color filter 201 and the black matrix 202 have uneven surfaces. Thus, the overcoat film 203 flattens the surfaces.
  • an alignment film 113 is formed to determine the initial alignment of liquid crystal molecules. For the alignment process of the alignment film 113 , rubbing or photo-alignment is used similarly to the alignment film 113 of the TFT substrate 100 .
  • the gap between the TFT substrate 100 and the counter substrate 200 is defined by columnar spacers 40 .
  • the columnar spacer 40 is formed after the overcoat film 203 is formed on the counter substrate 200 , or the columnar spacer 40 is formed simultaneously when the overcoat film 203 is formed.
  • the shape of the columnar spacer 40 includes various shapes such as a columnar shape, spindle shape, and shapes in combination of columnar and spindle shapes.
  • the feature of the embodiment of the present invention is a configuration in which the tip end of the columnar spacer 40 makes contact on the TFT substrate 100 . Since the common electrode 110 of the TFT substrate 100 is formed of ITO, its resistance value is large. In order to decrease the resistance of the common electrode 110 , a common metal interconnection 30 is formed between the common electrode 110 and the TET substrate or between the common electrode 110 and the liquid crystal layer 300 above the scanning line 10 and the picture signal line 20 .
  • a hole formed on the common metal interconnection 30 by removing the common metal interconnection 30 where the columnar spacer 40 makes contact is referred to as a through hole or the opening of the common metal interconnection 30 .
  • a hole for conducting electricity to the contact electrode 107 for example, is referred to as a contact hole.
  • the columnar spacer 40 makes contact on the TFT substrate in the through hole formed on the common metal interconnection 30 . Consequently, for example, in the case in which a pressure is applied to the counter substrate 200 with a finger, the side wall of the through hole prevents from the columnar spacer 40 from moving, and the columnar spacer 40 stays in the through hole. In other words, the opportunity of the columnar spacer 40 to cut the alignment film 113 is reduced, and consequently, the probability of producing the cuttings of the alignment film 113 is also reduced. The positional displacement between the TET substrate 100 and the counter substrate 200 is also prevented.
  • FIG. 2 is a plan view of pixels according to a first embodiment of the present invention.
  • an alignment direction 90 of an alignment film to determine the initial alignment of liquid crystal molecules is the vertical direction in FIG. 2 .
  • a pixel electrode 112 is an electrode in stripes (a plurality of lines) with a slit. The pixel electrode 112 is sometimes a line electrode with no slit.
  • the length of the pixel electrode 112 is at a predetermined angle ⁇ to an alignment direction 90 .
  • the angle ⁇ ranges from an angle five to 15 degrees.
  • the pixel electrode 112 is formed in a region surrounded by a scanning line 10 and a picture signal line 20 .
  • the picture signal line 20 is tilted as matched with the slope ⁇ of the pixel electrode.
  • the picture signal line 20 bends and extends in the vertical direction, and is arrayed in the lateral direction.
  • the scanning line 10 extends in the lateral direction, and is arrayed in the vertical direction.
  • a common metal interconnection 30 is connected to cover the picture signal line 20 and the scanning line 10 .
  • the common electrode 110 is formed of ITO.
  • the common metal interconnection 30 is connected to the common electrode 110 in order to decrease the resistance of the common electrode 110 .
  • the common metal interconnection 30 is made of a metal mainly containing Al, which has a low electrical resistance.
  • the thickness is 150 nm or more, and thinner than the thickness of the picture signal line 20 .
  • the thickness of the picture signal line 20 is about 500 nm.
  • the area of the common metal interconnection 30 is increased as well in a region including the picture signal line 20 crossing the scanning line 10 .
  • a through hole 70 is formed on the common metal interconnection 30 in the region.
  • the tip end of a main columnar spacer 40 and the tip end of a sub-columnar spacer 50 which are formed on a counter substrate 200 , are disposed.
  • the tip ends of the main columnar spacer 40 and the sub-columnar spacer 50 are surrounded by the common metal interconnection 30 .
  • the main columnar spacer 40 defines the gap between a TFT substrate 100 and the counter substrate 200 in the normal state. The tip end is always in contact with the TFT substrate 100 .
  • the tip end of the sub-columnar spacer 50 is not in contact with the TFT substrate 100 in the normal state.
  • the tip end contacts the TFT substrate 100 to prevent the gap between the TFT substrate 100 and the counter substrate 200 from being too small.
  • the main columnar spacer 40 and the sub-columnar spacer 50 are represented by the main columnar spacer 40 for describing the columnar spacers 40 and 50 .
  • FIG. 3 is a cross sectional view taken along line A-A in FIG. 2 .
  • the layers below the picture signal line 20 are omitted.
  • the layers below the picture signal line 20 are similarly omitted in cross sectional views below.
  • the common metal interconnection 30 is disposed above an organic passivation film 109 .
  • the thickness of the common metal interconnection 30 is thinner than the thickness of the picture signal line 20 .
  • the width is wider than the width of the picture signal line 20 .
  • the common metal interconnection 30 blocks light reflected off the side surface of the picture signal line 20 , and prevents a decrease in contrast.
  • FIG. 4 is a cross sectional view taken along line B-B in FIG. 2 .
  • the through hole is formed on the common metal interconnection 30 .
  • the columnar spacer 40 formed on the counter substrate 200 is in contact with a recess corresponding to the through hole.
  • FIG. 5 is a cross sectional view in the case in which an external force is applied to the counter substrate 200 and the columnar spacer 40 is horizontally displaced. In this case, the columnar spacer 40 contacts the side wall of the recess, and the columnar spacer 40 remains in the recess.
  • the counter substrate 200 is prevented from being horizontally displaced with respect to the TFT substrate 100 .
  • An alignment film 113 is also prevented from being cut by the columnar spacer 40 . In other words, the cuttings from the alignment film 113 cause bright spots. Accordingly, the first embodiment of the present invention can prevent the occurrence of bright spots.
  • FIG. 6 is a cross sectional view in the state in which a strong lateral force is applied to the counter substrate 200 and the columnar spacer 40 rides on the adjacent region beyond the recess.
  • a projection on the common metal interconnection 30 is formed on the region around the through hole.
  • the film thickness of the alignment film 113 is smaller than the height inside the recess due to the leveling effect in coating an alignment film material. Therefore, supposing that as illustrated in FIG. 6 , the columnar spacer 40 rides on the region around the through hole, the cut of the alignment film 113 can be reduced.
  • the through hole 70 is formed on the common metal interconnection 30 , and the columnar spacer 40 is formed on the counter substrate 200 corresponding to the through hole. Consequently, the positional displacement between the counter substrate 200 and the TFT substrate 100 can be prevented, as well as the alignment film can be prevented from being cut caused by the columnar spacer 40 .
  • FIG. 7 is a schematic diagram of the reflection of light off the side surface of the picture signal line 20 in the case in which the alignment direction 90 of the liquid crystal molecules is the same as the extending direction of the picture signal line 20 .
  • P-polarized light components are absent, and the ratios of S-polarized light and P-polarized light are the same.
  • the direction of the polarization axis of reflected light is not changed.
  • FIG. 8 is a schematic diagram in the case in which the alignment direction 90 of the liquid crystal molecules and the extending direction of the picture signal line 20 form an angle, e.g. an angle ⁇ . In this case, the reflectance of P-polarized light is smaller than the reflectance of S-polarized light.
  • the predetermined angle ⁇ has to be maintained in a range of an angle of about five to 15 degrees in order to prevent domains.
  • light reflected off the side surface of the picture signal line 20 has to be blocked as much as possible.
  • FIG. 9 is a cross sectional view of a configuration of the second embodiment of the present invention.
  • the width of the common metal interconnection 30 formed on the picture signal line 20 is greater than the width of the picture signal line 20 , and the common metal interconnection 30 blocks light reflected off the side surface of the picture signal line 20 .
  • Light is also reflected off the side surface of the common metal interconnection 30 .
  • the thickness of the common metal interconnection 30 is smaller than the thickness of the picture signal line 20 .
  • light reflected off the side surface of the common metal interconnection 30 can be made smaller than light reflected off the side surface of the picture signal line 20 . Accordingly, contrast can be improved.
  • FIG. 10 is a schematic diagram of the concept of properly providing the width of the common metal interconnection 30 and the width of the picture signal line 20 .
  • x y tan ⁇
  • the film thickness of the organic passivation film 109 is defined as y
  • a distance from one edge of the common metal interconnection 30 to one edge of the picture signal line 20 in width is defined as x.
  • the thickness of the picture signal line 20 is smaller than the thickness of the organic passivation film, and thus ignored.
  • the film thickness of the inorganic passivation film is smaller than the film thickness of the organic passivation film 109 , and thus ignored.
  • x (w1 ⁇ w2)/2, where the width of the common metal interconnection 30 is defined as w1, and the width of the picture signal line 20 is defined as w2.
  • ⁇ is an angle of five degrees or more.
  • contrast is specifically greatly affected when the screen is viewed in front.
  • ⁇ has to be an angle of five degrees or more for obtaining a significant effect.
  • the distance x is desirably 3 ⁇ m or less, and more preferably 2.5 ⁇ m or less.
  • the common metal interconnection 30 is an Al alloy single layer, for example.
  • the common metal interconnection 30 may be formed of a plurality of layers, not limited to this Al alloy single layer.
  • a MoW thin film can be formed on and below an Al or Al alloy layer.
  • Forming a refractory metal on an Al containing layer can prevent an event in which an Al hillock grows to break the capacitive insulating film 111 and the alignment film 113 , and then reaches the liquid crystal layer 300 for disturbing electric fields in the liquid crystal layer 300 .
  • the direct contact of an Al alloy with ITO oxidizes Al. This sometimes possibly causes a poor electrical conduction of the Al alloy to ITO.
  • Forming a refractory metal below the Al containing layer can prevent Al from being oxidized, allowing a good electrical conduction of ITO to the common metal interconnection 30 .
  • the cross sectional shape of the common metal interconnection 30 includes a rectangle as well as a trapezoid as illustrated in FIG. 11 .
  • a trapezoid cross section can decrease the possibility of causing disconnection in forming a film on the common metal interconnection 30 .
  • the thickness of an Al alloy 31 is 130 nm
  • the thickness of a MoW upper layer 32 is 10 nm
  • the thickness of a MoW lower layer 33 is about 20 nm.
  • an Al alloy includes AlSi, AlCu, and AlNb.
  • the upper layer and the lower layer include MoCr, Mo, and Ti in addition to MoW.
  • the upper layer can be formed of a metal having its reflectance lower than a metal contained in the lower layer.
  • the thicknesses and materials of the Al alloy, the upper layer, and the lower layer are similar also in the case in which the cross sectional shape of the common metal interconnection 30 is a rectangle.
  • the cross sectional shape of the common metal interconnection 30 may include shapes in FIGS. 12, 13, and 14 in addition to the shape in FIG. 11 .
  • the width of the metal upper layer 32 and the width of the metal lower layer 33 are wider than the width of the Al alloy 31 .
  • the width of the lower layer 33 is wider than the width of the Al alloy 31
  • the width of the upper layer 32 is smaller than the width of the Al alloy 31 .
  • the width of the upper layer 32 is wider than the width of the Al alloy 31
  • the width of the lower layer 33 is smaller than the width of the Al alloy 31 . All the cases can achieve the effect according to the second embodiment of the present invention.
  • the common metal interconnection 30 is disposed on the upper side of the common electrode 110 .
  • the common metal interconnection 30 can be formed on the lower side of the common electrode 110 .
  • FIG. 15 is this example.
  • the common metal interconnection 30 is formed on the upper side of the organic passivation film 109 (on the liquid crystal layer side).
  • the common electrode 110 is formed on the common electrode 110 .
  • the capacitive insulating film 111 is formed on the common electrode 110 .
  • the alignment film 113 is formed.
  • the plan disposition of the common metal interconnection 30 is similar to the plan disposition in FIG. 2 .
  • the common metal interconnection 30 is formed to cover the scanning line 10 and the picture signal line 20 .
  • a through hole is similarly formed on the common metal interconnection 30 , and then the tip end of the columnar spacer 40 contacts the recess. The effect is exerted similarly to the effect described in FIGS. 5 and 6 .
  • the common metal interconnection 30 can also have a stacked structure of an Al interconnection and a refractory metal.
  • the common electrode 110 formed of ITO is disposed on the common metal interconnection 30 .
  • a lower refractory metal layer is not necessarily disposed.
  • the cross sectional shape of the common metal interconnection 30 is not necessarily a rectangle. The shape may be a trapezoid. This is similar to the first embodiment.
  • FIG. 16 is a diagram in the case in which the cross sectional shape of the common metal interconnection 30 is a trapezoid.
  • the thickness of the Al alloy 31 is 130 nm
  • the thickness of the MoW upper layer 32 is 10 nm
  • no lower layer is present.
  • the width of the upper layer 32 is wider than the width of the Al alloy 31 .
  • the width of the upper layer 32 is smaller than the width of the Al alloy 31 . No lower layer is present in both of FIGS. 17 and 18 .
  • the following effect of the embodiment of the present invention can be obtained.
  • the positional displacement between the counter substrate 200 and the TET substrate 100 can be prevented.
  • the cut of the alignment film 113 can be prevented.
  • a decrease in contrast can be prevented. This decrease is caused by the displacement between the polarization axes because of light reflected off the side surface of the picture signal line 20 .
  • the common electrode 110 may be removed from the through hole 70 on the common metal interconnection 30 .
  • FIGS. 19 and 20 are cross sectional views illustrating a problem of color mixture.
  • a blue color filter 201 B, a red color filter 201 R, and a green color filter 201 G are formed on the counter substrate 200 .
  • a black matrix 202 is disposed between the color filters 201 B, 201 R, and 201 G.
  • a blue pixel 60 B, a red pixel 60 R, and a green pixel 60 G are formed on the TFT substrate 100 on the opposite side of the liquid crystal layer 300 .
  • the transmittance of the pixel is expressed by a curve 80 .
  • FIG. 19 no positional displacement is present between the TET substrate 100 and the counter substrate 200 , causing no color mixture.
  • a positional displacement is present between the TET substrate 100 and the counter substrate 200 .
  • a part of light obliquely emitted from the red pixel 60 R is transmitted through the green color filter 201 G. This is color mixture. Color mixture degrades color purity.
  • FIG. 21 is a diagram of the configuration according to the embodiment.
  • the common metal interconnection 30 in a predetermined width is formed on the boundary between the pixels on the TFT substrate.
  • the other configurations are similar to FIG. 19 .
  • no positional displacement is present between the TFT substrate 100 and the counter substrate 200 .
  • a positional displacement is present between the TET substrate 100 and the counter substrate 200 .
  • forming the common metal interconnection 30 can also prevent color mixture caused by light obliquely emitted from the pixels on the TFT substrate. This is because the common metal interconnection 30 blocks light causing color mixture. Supposing that no positional displacement is present, color mixture is sometimes caused depending on the width of the light shielding film 202 or the angle from the normal direction of the display panel when an observer views the panel. The provision of the common metal interconnection 30 can prevent color mixture in these cases.
  • Color mixture causes influence differently in blue, red, and green. For example, in some cases, red color mixture is more specifically noticeable. In some cases, blue color mixture is noticeable. Therefore, blocking specific colors causing a noticeable color mixture is sometimes effective depending on types of display devices. According to the fourth embodiment of the present invention, varying the width of the common metal interconnection 30 for each color allows easily achieving this configuration.
  • FIG. 23 is a diagram of an example of this configuration.
  • the width of the common metal interconnection 30 is increased for the red pixel 60 R and the blue pixel 61 B. Color mixture is noticeable in red and blue.
  • an increase 35 of the common metal interconnection 30 is formed for the red pixel 60 R.
  • An increase 36 of the common metal interconnection 30 is formed for the blue pixel 60 B.
  • the green pixel 60 G more greatly affects the luminosity than the red pixel 60 R and the blue pixel 60 B do.
  • the transmittance of the green pixel 60 G is greater than the transmittances of the red pixel 60 R and the blue pixel 60 B.
  • the width of the common metal interconnection 30 can be increased only on the boundary of the red pixel 60 R.
  • the width of the common metal interconnection 30 can be increased only on the boundary of the blue pixel 60 B.
  • the width of the common metal interconnection 30 on the boundary between two pixels can be increased only to one pixel.
  • the width of the common metal interconnection 30 can be increased only to one side. In any cases, necessary configurations can be achieved only by changing exposure masks for patterning the common metal interconnection 30 .
  • any configurations are possible other than the configuration in which the width of the common metal interconnection 30 is varied on each boundary of the pixels.
  • a configuration is possible in which the common metal interconnections 30 have the same width and the center of the common metal interconnection 30 is displace from the center of the picture signal line 20 . This configuration can prevent a decrease in the aperture ratio.
  • notches can be formed in any number. For example, two or more notches may be formed. Notches can be formed at any locations other than the location in FIG. 24 .
  • FIG. 25 is another example of the embodiment.
  • a half of the through hole 70 is opened.
  • the stopper for the columnar spacer 40 is absent on the open side of the through hole 70 .
  • the light shielding film (the black matrix) 202 is formed on the counter substrate 200 .
  • the through hole 70 is disposed in such a manner that the center of the through hole 70 is located near to the lower edge of the black matrix 202 where the notch (the opening) is absent.
  • the distance from the center to the upper edge of the black matrix 202 is longer than the distance from the center to the lower edge. In other words, the tolerance to light leakage is great even though the stopper for the columnar spacer 40 is absent in this direction. Thus, a decrease in contrast can be prevented.
  • the notch is formed on the through hole 70 of the common metal interconnection 30 for accommodating the columnar spacer 40 . Consequently, a thick alignment film is prevented from being formed in the through hole 70 . Thus, the cut of the alignment film caused by the columnar spacer 40 can be prevented.
  • FIG. 25 in the extending direction of the common metal interconnection 30 in parallel with the scanning line 10 , the common metal interconnection 30 surrounding the through hole 70 is opened on its upper side, whereas the common metal interconnection 30 surrounding the through hole 70 is not opened on its lower side. In this configuration, a half of the through hole is opened.
  • FIG. 26 is a plan view of a first form of the embodiment.
  • the pixel electrode 112 is omitted.
  • a contact hole 132 is formed on the capacitive insulating film 111 in the contact hole 130 .
  • the common electrode 110 is formed entirely on the substrate. On the other hand, in the contact hole 130 , the pixel electrode 112 extends. Thus, the common electrode 110 is not formed in the contact hole 130 in order to avoid the short circuit of the pixel electrode 112 with the common electrode 110 in the contact hole 130 .
  • FIG. 28 is a plan view of a third form of the embodiment.
  • FIG. 28 is different from FIG. 26 in that a protective ITO 1101 is formed to cover the contact hole 130 , and the protective ITO 1101 is formed simultaneously when the common electrode 110 is formed.
  • FIG. 32 is a cross sectional view taken along line D-D in FIG. 28 .
  • FIG. 32 is different from FIG. 31 in that the protective ITO 1101 is formed between the organic passivation film 109 and the capacitive insulating film 111 , and between the contact electrode 107 and the capacitive insulating film 111 near the bottom part of the contact hole 130 .
  • the contact hole 130 has a complicated inner shape, easily causing cracks, for example, on the capacitive insulating film 111 .
  • moisture is easily entered to the organic passivation film 109 .
  • the entrance of the moisture to the liquid crystal layer through cracks, for example, on the capacitive insulating film 111 degrades the function of the liquid crystal. Therefore, in FIG. 32 , forming the protective ITO 1101 between the organic passivation film 109 and the capacitive insulating film 111 prevents moisture present in the organic passivation film 109 from being entered to the liquid crystal.
  • the protective ITO 1101 is formed simultaneously when the common electrode 110 is formed. After patterning, the protective ITO 1101 is connected to the contact electrode 107 . Even tough the capacitive insulating film 111 is cracked and the pixel electrode 112 contacts the protective ITO 1101 at the cracked portion, the characteristics of the display device are not affected.
  • FIG. 29 is a plan view of a fourth form of the embodiment.
  • FIG. 29 is different from FIG. 27 in that the protective ITO 1101 is provided to cover the contact hole 130 .
  • the function of the protective ITO 1101 is as described in FIG. 28 .
  • FIG. 30 is a plan view of a fifth form of the embodiment.
  • the common metal interconnection 30 is formed on every other picture signal line 20 near the regions of the contact hole 130 .
  • the contact hole 130 and the contact hole 132 of the capacitive insulating film are formed near to the regions in which the common metal interconnection 30 is absent. Consequently, the short circuit of the pixel electrode 112 with the common metal interconnection 30 , which is caused by the common metal interconnection 30 entered to the contact hole, can be prevented.
  • FIG. 30 similarly to FIG. 29 , the common metal interconnection 30 is formed on every other picture signal line 20 near the regions of the contact hole 130 .
  • the contact hole 130 and the contact hole 132 of the capacitive insulating film are formed near to the regions in which the common metal interconnection 30 is absent. Consequently, the short circuit of the pixel electrode 112 with the common metal interconnection 30 , which is caused by the common metal interconnection 30 entered to the contact hole, can be prevented.
  • FIG. 30 similarly to FIG. 29 , the
  • the common metal interconnection 30 can be easily disposed away from the contact holes 130 and 132 .
  • the center of the contact hole 130 , the position of the protective ITO 1101 , and the center of the contact hole 132 formed on the capacitive insulating film 111 are displaced from the center of the contact electrode 107 .
  • only a part of the center of the contact hole 130 , the position of the protective ITO 1101 , and the center of the contact hole 132 may be displaced. These configurations are also applicable to the other embodiments.
  • the embodiment is described by the comparison with the fifth embodiment. Also in the first embodiment, the through hole 1111 of the capacitive insulating film 111 is formed as laid over the through hole of the common metal interconnection 30 , and thus a more effective barrier can be formed against the motion of the columnar spacer 40 . As described above, in the embodiment, the through hole 1111 is also formed on the capacitive insulating film 111 . Thus, the positional displacement between the TFT substrate 100 and the counter substrate 200 can be more effectively prevented.
  • the IPS mode also includes another mode in which the pixel electrode 112 is present on the lower side of (present on the TFT substrate side) and the common electrode 110 is present on the upper side (present on the liquid crystal layer side) through the capacitive insulating film 111 .
  • the common electrode 110 is formed flat entirely on the substrate, and a slit 1105 is formed on the common electrode 110 at the portion corresponding to the flat pixel electrode 112 .
  • FIG. 35 is a plan view of pixels in the case in which the common electrode 110 is present on the upper side.
  • the common metal interconnection 30 is present to cover the picture signal line 20 and the scanning line 10 .
  • the pixel electrode 112 is present in the region surrounded by the picture signal line 20 and the scanning line 10 .
  • the pixel electrode 112 is omitted.
  • the slit 1105 of the common electrode 110 is present corresponding to the pixel electrode 112 . Through the slit 1105 , electric flux lines extend in the liquid crystal to control liquid crystal molecules.
  • the common metal interconnection 30 is formed to cover the picture signal line 20 .
  • the common electrode 110 is formed to cover the common metal interconnection 30 .
  • the slit 1105 is present on both sides of the common electrode 110 . Consequently, the common electrode 110 looks like an island. However, as illustrated in FIG. 35 , in the other regions, the common electrode 110 is formed widely in common among the pixels.
  • the alignment film 113 is formed to cover the common electrode 110 .
  • the common metal interconnection 30 is formed on the lower side of the common electrode 110 (on the TFT substrate side). However, the common metal interconnection 30 may be formed on the upper side of the common electrode 110 (on the liquid crystal layer side).
  • the configurations described in the first to seventh embodiments are applicable also in the eighth embodiment.
  • the embodiment is applied to prevent the cut of the alignment film, the displacement between the TET substrate 100 and the counter substrate 200 , and light leakage caused by light reflected off the side surface of the picture signal line 20 .
  • the occurrence of bright spots caused by the cut of the alignment film can be prevented.
  • the occurrence of color mixture, for example, caused by the displacement between the TFT substrate 100 and the counter substrate 200 can be prevented.
  • a decrease in contrast caused by light reflected off the side surface of the picture signal line can be prevented.
  • a configuration may be possible in which ITO on the same layer as the pixel electrode 112 is provided entirely in the inside of the through hole of the common metal interconnection 30 or provided in a region a predetermined distance apart from the pixel electrode 112 .
  • regions are provided in which the alignment film is not partially formed. Consequently, the effect of preventing the cut of the alignment film can be more enhanced.

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US20250155751A1 (en) 2025-05-15
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US20180196297A1 (en) 2018-07-12
US12228827B2 (en) 2025-02-18
US11762244B2 (en) 2023-09-19
US11567374B2 (en) 2023-01-31
US10725345B2 (en) 2020-07-28
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CN105892180A (zh) 2016-08-24
US20200319492A1 (en) 2020-10-08

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