US20160190274A1 - Methods of forming contact structures for semiconductor devices and the resulting devices - Google Patents

Methods of forming contact structures for semiconductor devices and the resulting devices Download PDF

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US20160190274A1
US20160190274A1 US15/059,481 US201615059481A US2016190274A1 US 20160190274 A1 US20160190274 A1 US 20160190274A1 US 201615059481 A US201615059481 A US 201615059481A US 2016190274 A1 US2016190274 A1 US 2016190274A1
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contact structure
epi
semiconductor material
height
contact
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US15/059,481
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Ruilong Xie
Vimal Kamineni
William J. Taylor
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GlobalFoundries Inc
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GlobalFoundries Inc
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Assigned to GLOBALFOUNDRIES INC. reassignment GLOBALFOUNDRIES INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KAMINENI, VIMAL, XIE, RUILONG, TAYLOR, WILLIAM J., JR.
Publication of US20160190274A1 publication Critical patent/US20160190274A1/en
Assigned to GLOBALFOUNDRIES U.S. INC. reassignment GLOBALFOUNDRIES U.S. INC. RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: WILMINGTON TRUST, NATIONAL ASSOCIATION
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76889—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances by forming silicides of refractory metals
    • H—ELECTRICITY
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1005—Formation and after-treatment of dielectrics
    • H01L2221/1052—Formation of thin functional dielectric layers
    • H01L2221/1057—Formation of thin functional dielectric layers in via holes or trenches
    • H01L2221/1063—Sacrificial or temporary thin dielectric films in openings in a dielectric
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    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present disclosure generally relates to the formation of semiconductor devices, and, more specifically, to various methods of forming contact structures for semiconductor devices and the resulting devices.
  • Transistors come in a variety of shapes and forms, e.g., planar transistors, FinFET transistors, nanowire devices, etc.
  • each device comprises drain and source regions and a gate electrode structure positioned above and between the source/drain regions.
  • a conductive channel region forms between the drain region and the source region.
  • electrical connections must be formed to the device so that it may operate as intended. That is, electrical connections must be made to the source region, the drain region and the gate electrode of the device.
  • the conductive structures that actually make contact with the device itself are referred to as “contacts” within the industry.
  • Such conductive contacts are formed in one or more layers of insulating material.
  • the entire arrangement of the conductive contacts and the associated layer(s) of insulating material are sometimes referred to as the “contact level” of the overall electrical “wiring arrangement” that is formed to provide electrical connection to the integrated circuit device.
  • the contact structure may comprise contact elements or contact plugs having a generally square-like or round shape that are formed in an interlayer dielectric material, which in turn encloses and passivates the circuit elements.
  • the contact structure may have an elongated line-type structure (e.g., so-called trench silicide structures for contacting to source/drain regions).
  • the contact structures may be made of a variety of materials, such as tungsten, which, in combination with appropriate barrier materials, has proven to be a viable contact metal.
  • the electrical connections of the individual circuit elements cannot be established within the contact level, but require one or more additional metallization layers, which generally include metal-containing lines providing the intra-level electrical connection, and also include a plurality of inter-level connections or vertical connections, which are also referred to as vias.
  • These vertical interconnect structures include an appropriate metal and provide the electrical connection of the various stacked metallization layers.
  • the increased packing density mandated the use of sophisticated metal-containing materials and dielectric materials in order to reduce the parasitic capacitance in the metallization layers and provide a sufficiently high conductivity of the individual metal lines and vias.
  • copper in combination with low-k dielectric materials which are to be understood as dielectric materials having a dielectric constant of approximately 3.0 or less, are typically used in order to achieve the required electrical performance and the electromigration behavior as is required in view of reliability of the integrated circuits.
  • the contact elements in the contact level have to be provided with critical dimensions in the same order of magnitude.
  • the interlayer dielectric material is formed first and is patterned so as to receive contact openings, which extend through the interlayer dielectric material to the corresponding contact areas of the circuit elements.
  • the lateral size of the drain and source areas, and thus the available area for the contact regions is 100 nm and significantly less, thereby requiring extremely complex lithography and etch techniques in order to form the contact openings with well-defined lateral dimensions and with a high degree of alignment accuracy.
  • contact technologies have been developed in which contact openings are formed in a self-aligned manner by removing dielectric material, such as silicon dioxide, selectively from the spaces between closely spaced gate electrode structures. That is, after completing the transistor structure, the sidewall spacer material and gate cap layer adjacent the gate electrode structures are used as etch masks for selectively removing the silicon dioxide material in order to expose the contact regions of the transistors, thereby providing self-aligned trenches that are substantially laterally delineated by the spacer structures. Consequently, a corresponding lithography process only needs to define a global contact opening above an active region, wherein the contact trenches then result from the selective etch process using the exposed portions of the sidewall spacer/gate cap layer as an etch mask. Thereafter, an appropriate contact material, such as tungsten and the like, may be filled into the contact trenches/openings.
  • dielectric material such as silicon dioxide
  • metal silicide layers are formed in the source/drain regions of a device and on the gate electrode of a device in order to reduce electrical contact resistance.
  • the contact area between the metal silicide layer and the underlying silicon or epi semiconductor material could simply be increased.
  • this could theoretically be accomplished by forming the epi material on the fins in an un-merged condition, i.e., no contact between epi material on adjacent fins, and thereafter forming an individual metal silicide layer that wraps around each of the separated epi materials. In practice, this is a very difficult task for several reasons.
  • the area available for establishing electrical contact to the devices, especially the source/drain regions, has been significantly reduced due to device scaling.
  • This decrease in available contact area is the result of the reduced lateral distance between adjacent devices due to increased packing densities. All other things being equal, the reduction in the available contact area results in an undesirable increase in contact resistance, which results in the degradation of the performance of the device.
  • the present disclosure is directed to various methods of forming contact regions for semiconductor devices and the resulting devices that may avoid, or at least reduce, the effects of one or more of the problems identified above.
  • One exemplary device disclosed herein includes, among other things, a first epi semiconductor material that is positioned in a source/drain region of the device, the first epi semiconductor material having a first lateral width at an upper surface thereof.
  • the disclosed device also includes an extended-height epi contact structure that is positioned on the first epi semiconductor material, the extended-height epi contact structure having an upper surface and first and second side surfaces, wherein the upper surface and the first and second side surfaces collectively define a contact length of the extended-height epi contact structure that is greater than the first lateral width.
  • the illustrative device further includes a metal silicide region that is positioned on the upper surface and the first and second side surfaces of the extended-height epi contact structure.
  • Another illustrative device disclosed herein includes a first epi semiconductor material that is positioned in a source/drain region of the device, wherein the first epi semiconductor material has a first lateral width at a first upper surface thereof. Furthermore, the illustrative device also includes an extended-height epi contact structure that is positioned above the first epi semiconductor material, wherein the extended-height epi contact structure includes, among other things, a first contact structure portion that is positioned on the first upper surface of the first epi semiconductor material and a second contact structure portion that is positioned on a second upper surface of the first contact structure portion, the first contact structure portion having a second lateral width at the second upper surface thereof that is greater than the first lateral width, and the second contact structure portion having a third lateral width at a third upper surface thereof that is less than the second lateral width. Additionally, the disclosed device includes a metal silicide region that is positioned on at least first and second side surfaces and the third upper surface of the second contact structure portion.
  • an illustrative device in yet another exemplary embodiment of the presently disclosed subject matter, includes a first epi semiconductor material that is positioned in a source/drain region of the device, wherein the first epi semiconductor material has a first lateral width at a first upper surface thereof.
  • the disclosed device also includes an extended-height epi contact structure that is positioned on the first epi semiconductor material, the extended-height epi contact structure including, among other things, a first contact structure portion that is positioned on the first upper surface of the first epi semiconductor material and a second contact structure portion that is positioned on a second upper surface of the first contact structure portion, wherein the second contact structure portion covers a first surface portion of the second upper surface but not a second surface portion of the second upper surface.
  • the second surface portion of the first contact structure portion, first and second side surfaces of the second contact structure portion, and the third upper surface of the second contact structure portion collectively define a contact length of the extended-height epi contact structure that is greater than the first lateral width of the first upper surface of the first epi semiconductor material.
  • the exemplary device further includes a metal silicide region that is positioned on the second surface portion of the first contact structure portion and the first and second side surfaces and the third upper surface of the second contact structure portion.
  • FIGS. 1A-1I depict various methods disclosed herein of forming contact structures for semiconductor devices and the resulting devices.
  • FIGS. 2A-2H also depict other methods disclosed herein of forming contact structures for semiconductor devices and the resulting devices.
  • the present disclosure generally relates to various methods of forming contact structures for semiconductor devices and the resulting devices.
  • the methods and devices disclosed herein may be employed in manufacturing products using a variety of technologies, e.g., NMOS, PMOS, CMOS, etc., and they may be employed in manufacturing a variety of different devices, e.g., memory devices, logic devices, ASICs, etc.
  • technologies e.g., NMOS, PMOS, CMOS, etc.
  • devices e.g., memory devices, logic devices, ASICs, etc.
  • the inventions disclosed herein should not be considered limited to the illustrative examples depicted and described herein.
  • planar or non-planar transistor devices may be used when forming either planar or non-planar (e.g., FinFET) transistor devices.
  • Illustrative devices 10 , 100 shown in FIGS. 1A-1I and FIGS. 2A-2I , respectively, in the form of planar devices will be depicted for illustrative purposes.
  • the illustrative devices 10 , 100 may be formed above an illustrative substrate 12 that may have a variety of configurations in various embodiments, such as the depicted bulk silicon configuration.
  • the substrate 12 may also have a silicon-on-insulator (“SOT”) configuration that includes a bulk silicon layer, a buried insulation layer and an active layer, wherein semiconductor devices are formed in and above the active layer.
  • SOT silicon-on-insulator
  • substrate or “semiconductor substrate” should be understood to cover all semiconducting materials and all forms of such materials.
  • the various layers of material depicted in the following drawings may be formed by any of a variety of different known techniques, e.g., a chemical vapor deposition (CVD) process, an atomic layer deposition (ALD) process, a thermal growth process, spin-coating techniques, etc.
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • thermal growth process spin-coating techniques, etc.
  • FIGS. 1A-1I depict one illustrative method of forming contact structures for semiconductor devices and the resulting devices.
  • the device 10 includes a substrate 12 , raised source/drain regions 20 , a layer of insulating material 22 and a gate structure 14 .
  • Raised source/drain regions 20 are not required to practice at least some aspects of the presently disclosed inventions.
  • the gate structure 14 may be formed using either gate-first or replacement gate techniques.
  • the gate structure 14 includes an illustrative gate insulation layer 11 and an illustrative gate electrode 13 .
  • the gate structure 14 is implemented in a high-k/metal gate configuration.
  • high-k material or layer means a material having a dielectric constant greater than approximately 10 .
  • a gate cap layer 15 and sidewall spacer 17 encapsulate and protect the gate structure 14 .
  • the various components and structures of the device 10 may be formed by performing a variety of deposition processes, patterning processes, etching processes, doping processes, etc.
  • the various components and structures of the device 10 may be formed using a variety of different materials.
  • the layer of insulating material 22 may include silicon dioxide, and the source/drain regions 20 may include dopant materials (N-type dopants for NMOS devices and P-type dopants for PMOS devices).
  • the gate cap layer 15 and sidewall spacer 17 may include silicon nitride.
  • the gate electrode 13 may include aluminum or other conductive metals in various embodiments. The thicknesses of the various layers of material may also vary depending upon the particular application.
  • FIG. 1B illustrates the device 10 after one or more etching processes were performed using the source/drain regions 20 as an etch stop to form an opening or trench 24 in the layer of insulating material 22 .
  • a portion of the sidewall spacer material 17 may be removed due to the etching process.
  • a portion of the gate cap layer 15 may also be removed depending upon the accuracy of the alignment of the contact opening 24 .
  • the etching process exposes the source/drain region 20 for further processing.
  • the source/drain region 20 includes an upper surface 20 U having a lateral width 23 .
  • the lateral width 23 of the source/drain region 20 corresponds to the contact length of the contact structure.
  • FIG. 1C illustrates the device 10 after an extended-height epi contact structure 26 was formed in the contact opening 24 .
  • the extended-height epi contact structure 26 may be formed by performing one or more epi growth processes and thereafter performing a chemical mechanical polish (“CMP”) process to remove excess epi material positioned outside of the contact opening 24 .
  • CMP chemical mechanical polish
  • the extended-height epi contact structure 26 is made of an epi material that is substantially the same as the material of the epi material formed for the raised source/drain region 20 .
  • both materials may be silicon, both materials may be silicon germanium, etc.
  • the extended-height epi contact structure 26 may be made of an epi material that is different from the epi material (if any) in the source/drain region 20 or the substrate 12 .
  • the extended-height epi contact structure 26 may be formed to any desired height above the source/drain region 20 , and the extended-height epi contact structure 26 may be heavily doped to ensure low resistance.
  • the upper surface 26 U of the extended-height epi contact structure 26 is at a level that is above the upper surface 15 U of the gate cap layer 15 .
  • the difference in height levels between the surfaces may be about 30-100 nm, but the height difference may vary depending upon the application.
  • FIG. 1D illustrates the device 10 after one or more recess etching processes were performed on the insulating layer 22 to reduce its thickness or height as shown in the figure. As such, a portion of the extended-height epi contact structure 26 is exposed for further processing.
  • the amount of recessing of the layer of insulating material 22 and thus the amount of the extended-height epi contact structure 26 exposed above the surface of the recessed layer of insulating material 22 , may vary depending upon the application.
  • FIG. 1E illustrates the device 10 after one or more timed etching processes were performed to trim the exposed portion of the extended-height epi contact structure 26 .
  • the portion of extended-height epi contact structure 26 above the insulating layer 22 has been narrowed in lateral width and shortened in vertical height.
  • the base of the exposed portion of the extended-height epi contact structure 26 has been recessed such that its recessed surface 26 R is below the upper surface 22 U of the insulating material 22 , as shown.
  • the amount of trimming of the exposed portion of the extended-height epi contact structure 26 may vary depending upon the application.
  • FIG. 1F illustrates the device 10 after a metal silicide region 28 was formed on the exposed and trimmed portion of the extended-height epi contact structure 26 .
  • the metal silicide region 28 depicted herein may be formed using a variety of different refractory metals, e.g., nickel, platinum, cobalt, etc., or combinations thereof, it may be formed to any desired thickness, and it may be formed using metal silicide formation techniques that are well known to those skilled in the art.
  • the typical steps performed to form metal silicide regions are: (1) depositing a layer of refractory metal; (2) performing an initial heating process causing the refractory metal to react with underlying material; (3) performing an etching process to remove unreacted portions of the layer of refractory metal; and (4) performing an additional heating process to form the final phase of the metal silicide.
  • the metal silicide may also be formed by depositing a thin liner of metal, such as Ti or NiPt, depositing a TiN barrier on the liner and depositing a low-resistance conducting metal, such as W, on the barrier. The silicide is formed between the liner and conducting metal during the thermal process that occurs when the conducting metal is deposited. As such, no additional strip process is needed.
  • the metal silicide region 28 may be formed by initially performing a highly-conformal atomic layer deposition (ALD) process or an RF physical vapor deposition (PVD) process to deposit a layer of, for example, nickel, having a thickness of, for example, 1-5 nm. Thereafter, the anneal-etch-anneal process sequence described above is performed to complete the formation of the metal silicide region 28 .
  • ALD highly-conformal atomic layer deposition
  • PVD RF physical vapor deposition
  • the contact length is the sum of the substantially vertical heights (along the side portions) 35 , 31 and lateral width (along the upper surface) 29 of the previously exposed portions of the extended-height epi contact structure 26 .
  • This contact length is greater than the lateral width 23 of the source/drain region 20 , and as such, the contact area is greater than that of prior art contact structures. Increasing the contact area leads to a desirable decrease in contact resistance that improves the performance of the device 10 .
  • FIG. 1G illustrates the device 10 after one or more deposition processes were performed so as to deposit a conductive layer 30 on the device 10 .
  • the conductive layer 30 includes tungsten.
  • FIG. 1H illustrates the device 10 after the conductive layer 30 was patterned using known photolithography techniques so as to form a contact 30 B on the metal silicide region 28 .
  • the shape of the contact 30 B may vary depending upon the application and patterning technique used in various embodiments.
  • the contact 30 B is conductively coupled to the source/drain region 20 of the device 10 . As shown, small portions 33 of the metal silicide region 28 are horizontally adjacent to the layer of insulating material 22 and not covered by the contact 30 B.
  • FIG. 1I illustrates the device 10 after another layer of insulating material 32 was deposited on the device 10 , including on the contact 30 B and the layer of insulating material 22 .
  • the layer of insulating material 32 may be comprised of the same or a different insulating material as that used for the layer of insulating material 22 .
  • One or more CMP processes were performed to remove any excess insulating material above the contact 30 B.
  • FIGS. 2A-2H depict another illustrative method of forming contacts for semiconductor devices and the resulting devices, wherein like reference numbers will be used to indicate previously described structures.
  • FIG. 2A depicts a device 100 at a point of fabrication that corresponds to that shown in FIG. 1B , i.e., after the formation of the source/drain regions 20 , the layer of insulating material 22 , the above-described gate structure 14 , and the above-described contact opening 24 in the layer of insulating material 22 . Also depicted are the above-described gate cap layer 15 and sidewall spacer material 17 .
  • FIG. 2B illustrates the device 100 after one or more growth processes were performed to form a first portion of another embodiment of an extended-height epi contact structure 26 A.
  • one or more epi growth processes were performed to grow a layer of epi semiconductor material on the source/drain region 20 of the device 100 to form the first portion of the extended-height epi contact structure 26 A (first portion) within the contact opening 24 .
  • the first portion 26 A is formed such that its upper surface 26 X is positioned above the upper surface 15 U of the gate cap layer 15 .
  • the difference in height level between the upper surface 15 U of the gate cap layer 15 and the upper surface 26 X of the first portion 26 A may vary depending upon the particular application. In one embodiment, the height difference may be about 30-70 nm. Relative to the extended-height epi contact structure 26 discussed previously, the first portion 26 A shown in FIG. 2B is shorter.
  • FIG. 2C illustrates the device 10 after a sidewall spacer 27 was formed in the contact opening 24 above the first portion 26 A.
  • the spacer 27 may be formed by depositing a layer of spacer material, such as silicon nitride, and thereafter performing an anisotropic etching process to define the spacer 27 .
  • FIG. 2D illustrates the device 100 after a second portion of the extended-height epi contact structure 26 B (second portion) was grown on the first portion 26 A adjacent to, and in between, the spacer 27 .
  • the portions 26 A, 26 B may be made of the same epi semiconductor material. In another embodiment, the portions 26 A, 26 B may be made of different epi semiconductor materials.
  • FIG. 2E illustrates the device 100 after one or more etching processes were performed to remove the spacer 27 selectively relative to the surrounding materials. This process operation results in the formation of trenches or spacer cavities 29 .
  • FIG. 2F illustrates the device 100 after one or more timed etching processes were performed to trim the exposed portions of the second portion 26 B and to recess the exposed portions of the first portion 26 A.
  • the second portion 26 B has been narrowed in lateral width and shortened in vertical height.
  • the amount of trimming of the second portion 26 B and recessing of the first portion 26 A may vary depending upon the application.
  • FIG. 2G illustrates the device 100 after a metal silicide region 28 was formed on the first and second portions 26 A, 26 B within the contact opening 24 .
  • the metal silicide region 28 may be formed of any metal silicide and may be formed to any desired thickness as described previously.
  • the contact length of the overall contact structure is the sum of the substantially vertical heights 200 , 202 and lateral width 204 of the second portion 26 B, as well as the lateral widths 206 , 208 of the first portion 26 A. This contact length is greater than the lateral width 23 of the source/drain region 20 , and, as such, the contact area is greater than that of prior art contact structures. Increasing the contact area leads to a desirable decrease in contact resistance that improves the performance of the device 100 .
  • FIG. 2H illustrates the device 100 after one or more deposition processes and CMP processes were performed to form a conductive contact 300 in the contact opening 24 .
  • the conductive contact 300 includes tungsten.
  • the contact 300 is conductively coupled to the source/drain region 20 through the first and second portions of the extended-height epi contact structure 26 B, 26 A.

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Abstract

A device includes a first epi semiconductor material positioned in a source/drain region of the device, the first epi semiconductor material having a first lateral width at an upper surface thereof. An extended-height epi contact structure having an upper surface and first and second side surfaces is positioned on the first epi semiconductor material, the upper surface and the first and second side surfaces collectively defining a contact length of the extended-height epi contact structure that is greater than the first lateral width. A metal silicide region is positioned on the upper surface and the first and second side surfaces of the extended-height epi contact structure.

Description

    BACKGROUND
  • 1. Field of the Disclosure
  • The present disclosure generally relates to the formation of semiconductor devices, and, more specifically, to various methods of forming contact structures for semiconductor devices and the resulting devices.
  • 2. Description of the Related Art
  • In modern integrated circuits, such as microprocessors, storage devices and the like, a very large number of circuit elements, especially transistors, are provided and operated on a restricted chip area. Transistors come in a variety of shapes and forms, e.g., planar transistors, FinFET transistors, nanowire devices, etc. Irrespective of the physical configuration of the transistor device, each device comprises drain and source regions and a gate electrode structure positioned above and between the source/drain regions. Upon application of an appropriate control voltage to the gate electrode, a conductive channel region forms between the drain region and the source region. Irrespective of whether a planar or non-planar device is considered, electrical connections must be formed to the device so that it may operate as intended. That is, electrical connections must be made to the source region, the drain region and the gate electrode of the device.
  • By using such field effect transistors, more complex circuit components may be composed, such as inverters and the like, thereby forming complex logic circuitry, embedded memories and the like. Over the recent years, due to the reduced dimensions of the transistor devices, the operating speed of the circuit components has been increased with every new device generation, and the “packing density” (i.e., devices per area) in such products has been increased over the recent years. Such improvements in the performance of transistor devices has reached the point where the limiting factor of the finally achieved operating speed of complex integrated circuit products is no longer the individual transistor element but the electrical performance of the complex wiring system that is formed above the device level, including the actual semiconductor-based circuit elements.
  • Typically, the conductive structures that actually make contact with the device itself, i.e., the source region, the drain region and the gate electrode, are referred to as “contacts” within the industry. Such conductive contacts are formed in one or more layers of insulating material. The entire arrangement of the conductive contacts and the associated layer(s) of insulating material are sometimes referred to as the “contact level” of the overall electrical “wiring arrangement” that is formed to provide electrical connection to the integrated circuit device. In some cases, the contact structure may comprise contact elements or contact plugs having a generally square-like or round shape that are formed in an interlayer dielectric material, which in turn encloses and passivates the circuit elements. In other cases, the contact structure may have an elongated line-type structure (e.g., so-called trench silicide structures for contacting to source/drain regions). The contact structures may be made of a variety of materials, such as tungsten, which, in combination with appropriate barrier materials, has proven to be a viable contact metal.
  • Typically, due to the large number of circuit elements and the required complex layout of modern integrated circuits, the electrical connections of the individual circuit elements cannot be established within the contact level, but require one or more additional metallization layers, which generally include metal-containing lines providing the intra-level electrical connection, and also include a plurality of inter-level connections or vertical connections, which are also referred to as vias. These vertical interconnect structures include an appropriate metal and provide the electrical connection of the various stacked metallization layers. In some cases, the increased packing density mandated the use of sophisticated metal-containing materials and dielectric materials in order to reduce the parasitic capacitance in the metallization layers and provide a sufficiently high conductivity of the individual metal lines and vias. For example, in complex metallization systems, copper in combination with low-k dielectric materials, which are to be understood as dielectric materials having a dielectric constant of approximately 3.0 or less, are typically used in order to achieve the required electrical performance and the electromigration behavior as is required in view of reliability of the integrated circuits.
  • As device dimensions have decreased, e.g., transistors with gate lengths of 50 nm and less, the contact elements in the contact level have to be provided with critical dimensions in the same order of magnitude. When forming tungsten-based contact plug elements, typically the interlayer dielectric material is formed first and is patterned so as to receive contact openings, which extend through the interlayer dielectric material to the corresponding contact areas of the circuit elements. In particular, in densely packed device regions, the lateral size of the drain and source areas, and thus the available area for the contact regions, is 100 nm and significantly less, thereby requiring extremely complex lithography and etch techniques in order to form the contact openings with well-defined lateral dimensions and with a high degree of alignment accuracy.
  • For this reason, contact technologies have been developed in which contact openings are formed in a self-aligned manner by removing dielectric material, such as silicon dioxide, selectively from the spaces between closely spaced gate electrode structures. That is, after completing the transistor structure, the sidewall spacer material and gate cap layer adjacent the gate electrode structures are used as etch masks for selectively removing the silicon dioxide material in order to expose the contact regions of the transistors, thereby providing self-aligned trenches that are substantially laterally delineated by the spacer structures. Consequently, a corresponding lithography process only needs to define a global contact opening above an active region, wherein the contact trenches then result from the selective etch process using the exposed portions of the sidewall spacer/gate cap layer as an etch mask. Thereafter, an appropriate contact material, such as tungsten and the like, may be filled into the contact trenches/openings.
  • Another problem with continued scaling of transistor devices is that the electrical resistance between the conductive contacts and the transistor element is becoming a larger portion of the overall electrical resistance. Traditionally, metal silicide layers are formed in the source/drain regions of a device and on the gate electrode of a device in order to reduce electrical contact resistance. Ideally, the contact area between the metal silicide layer and the underlying silicon or epi semiconductor material could simply be increased. In the case of FinFET devices, this could theoretically be accomplished by forming the epi material on the fins in an un-merged condition, i.e., no contact between epi material on adjacent fins, and thereafter forming an individual metal silicide layer that wraps around each of the separated epi materials. In practice, this is a very difficult task for several reasons. First, when epi semiconductor material is grown on a fin, it is very difficult to control the thickness of the epi semiconductor material. Thus, the epi material may unintentionally be merged together, thereby preventing the formation of the wrap-around metal silicide layers. One possible solution to avoid such unintended fin merger would be to form the epi material on the fin to a very small thickness to virtually assure that unintended fin merger does not occur. The drawbacks to this approach are that such a very small volume of epi material will tend to increase the overall resistance and such a thin layer of epi material may be substantially consumed by the metal silicide material and/or damaged during the contact formation process.
  • Fundamentally, in both FETs and FinFETs, the area available for establishing electrical contact to the devices, especially the source/drain regions, has been significantly reduced due to device scaling. This decrease in available contact area is the result of the reduced lateral distance between adjacent devices due to increased packing densities. All other things being equal, the reduction in the available contact area results in an undesirable increase in contact resistance, which results in the degradation of the performance of the device. The present disclosure is directed to various methods of forming contact regions for semiconductor devices and the resulting devices that may avoid, or at least reduce, the effects of one or more of the problems identified above.
    • SUMMARY OF THE DISCLOSURE
  • The following presents a simplified summary of the disclosure in order to provide a basic understanding of some aspects of the subject matter that is described in further detail below. This summary is not an exhaustive overview of the disclosure, nor is it intended to identify key or critical elements of the subject matter disclosed here. Its sole purpose is to present some concepts in a simplified form as a prelude to the more detailed description that is discussed later.
  • Generally, the present disclosure is directed to various methods of forming contact structures for semiconductor devices and the resulting devices. One exemplary device disclosed herein includes, among other things, a first epi semiconductor material that is positioned in a source/drain region of the device, the first epi semiconductor material having a first lateral width at an upper surface thereof. The disclosed device also includes an extended-height epi contact structure that is positioned on the first epi semiconductor material, the extended-height epi contact structure having an upper surface and first and second side surfaces, wherein the upper surface and the first and second side surfaces collectively define a contact length of the extended-height epi contact structure that is greater than the first lateral width. Additionally, the illustrative device further includes a metal silicide region that is positioned on the upper surface and the first and second side surfaces of the extended-height epi contact structure.
  • Another illustrative device disclosed herein includes a first epi semiconductor material that is positioned in a source/drain region of the device, wherein the first epi semiconductor material has a first lateral width at a first upper surface thereof. Furthermore, the illustrative device also includes an extended-height epi contact structure that is positioned above the first epi semiconductor material, wherein the extended-height epi contact structure includes, among other things, a first contact structure portion that is positioned on the first upper surface of the first epi semiconductor material and a second contact structure portion that is positioned on a second upper surface of the first contact structure portion, the first contact structure portion having a second lateral width at the second upper surface thereof that is greater than the first lateral width, and the second contact structure portion having a third lateral width at a third upper surface thereof that is less than the second lateral width. Additionally, the disclosed device includes a metal silicide region that is positioned on at least first and second side surfaces and the third upper surface of the second contact structure portion.
  • In yet another exemplary embodiment of the presently disclosed subject matter, an illustrative device includes a first epi semiconductor material that is positioned in a source/drain region of the device, wherein the first epi semiconductor material has a first lateral width at a first upper surface thereof. The disclosed device also includes an extended-height epi contact structure that is positioned on the first epi semiconductor material, the extended-height epi contact structure including, among other things, a first contact structure portion that is positioned on the first upper surface of the first epi semiconductor material and a second contact structure portion that is positioned on a second upper surface of the first contact structure portion, wherein the second contact structure portion covers a first surface portion of the second upper surface but not a second surface portion of the second upper surface. Furthermore, the second surface portion of the first contact structure portion, first and second side surfaces of the second contact structure portion, and the third upper surface of the second contact structure portion collectively define a contact length of the extended-height epi contact structure that is greater than the first lateral width of the first upper surface of the first epi semiconductor material. Additionally, the exemplary device further includes a metal silicide region that is positioned on the second surface portion of the first contact structure portion and the first and second side surfaces and the third upper surface of the second contact structure portion.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • The disclosure may be understood by reference to the following description taken in conjunction with the accompanying drawings, in which like reference numerals identify like elements, and in which:
  • FIGS. 1A-1I depict various methods disclosed herein of forming contact structures for semiconductor devices and the resulting devices; and
  • FIGS. 2A-2H also depict other methods disclosed herein of forming contact structures for semiconductor devices and the resulting devices.
    •
  • While the subject matter disclosed herein is susceptible to various modifications and alternative forms, specific embodiments thereof have been shown by way of example in the drawings and are herein described in detail. It should be understood, however, that the description herein of specific embodiments is not intended to limit the invention to the particular forms disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
    • NOTATION AND NOMENCLATURE
  • Certain terms are used throughout the disclosure to refer to particular components. However, different entities may refer to a component by different names. This document does not intend to distinguish between components that differ in name but not function. Furthermore, the terms “including” and “comprising” are used herein in open-ended fashion, and thus mean “including, but not limited to.”
    • DETAILED DESCRIPTION
  • Various illustrative embodiments of the present subject matter are described below. In the interest of clarity, not all features of an actual implementation are described in this specification. It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific decisions must be made to achieve the developers' specific goals, such as compliance with system-related and business-related constraints, which will vary from one implementation to another. Moreover, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art having the benefit of this disclosure.
  • The present subject matter will now be described with reference to the attached figures. Various systems, structures and devices are schematically depicted in the drawings for purposes of explanation only and so as to not obscure the present disclosure with details that are well known to those skilled in the art. Nevertheless, the attached drawings are included to describe and explain illustrative examples of the present disclosure. The words and phrases used herein should be understood and interpreted to have a meaning consistent with the understanding of those words and phrases by those skilled in the relevant art. No special definition of a term or phrase, i.e., a definition that is different from the ordinary and customary meaning as understood by those skilled in the art, is intended to be implied by consistent usage of the term or phrase herein. To the extent that a term or phrase is intended to have a special meaning, i.e., a meaning other than that understood by skilled artisans, such a special definition will be expressly set forth in the specification in a definitional manner that directly and unequivocally provides the special definition for the term or phrase.
  • The present disclosure generally relates to various methods of forming contact structures for semiconductor devices and the resulting devices. The methods and devices disclosed herein may be employed in manufacturing products using a variety of technologies, e.g., NMOS, PMOS, CMOS, etc., and they may be employed in manufacturing a variety of different devices, e.g., memory devices, logic devices, ASICs, etc. Of course, the inventions disclosed herein should not be considered limited to the illustrative examples depicted and described herein.
  • The methods and devices disclosed herein may be used when forming either planar or non-planar (e.g., FinFET) transistor devices. Illustrative devices 10, 100 shown in FIGS. 1A-1I and FIGS. 2A-2I, respectively, in the form of planar devices will be depicted for illustrative purposes. The illustrative devices 10, 100 may be formed above an illustrative substrate 12 that may have a variety of configurations in various embodiments, such as the depicted bulk silicon configuration. The substrate 12 may also have a silicon-on-insulator (“SOT”) configuration that includes a bulk silicon layer, a buried insulation layer and an active layer, wherein semiconductor devices are formed in and above the active layer. Thus, the terms “substrate” or “semiconductor substrate” should be understood to cover all semiconducting materials and all forms of such materials. The various layers of material depicted in the following drawings may be formed by any of a variety of different known techniques, e.g., a chemical vapor deposition (CVD) process, an atomic layer deposition (ALD) process, a thermal growth process, spin-coating techniques, etc.
  • FIGS. 1A-1I depict one illustrative method of forming contact structures for semiconductor devices and the resulting devices. At the point of fabrication depicted in FIG. 1A, the device 10 includes a substrate 12, raised source/drain regions 20, a layer of insulating material 22 and a gate structure 14. Raised source/drain regions 20 are not required to practice at least some aspects of the presently disclosed inventions. The gate structure 14 may be formed using either gate-first or replacement gate techniques. In the depicted example, the gate structure 14 includes an illustrative gate insulation layer 11 and an illustrative gate electrode 13. In at least one embodiment, the gate structure 14 is implemented in a high-k/metal gate configuration. As used herein and in the attached claims, the term “high-k” material or layer means a material having a dielectric constant greater than approximately 10. A gate cap layer 15 and sidewall spacer 17 encapsulate and protect the gate structure 14. The various components and structures of the device 10 may be formed by performing a variety of deposition processes, patterning processes, etching processes, doping processes, etc.
  • Also, the various components and structures of the device 10 may be formed using a variety of different materials. The layer of insulating material 22 may include silicon dioxide, and the source/drain regions 20 may include dopant materials (N-type dopants for NMOS devices and P-type dopants for PMOS devices). The gate cap layer 15 and sidewall spacer 17 may include silicon nitride. The gate electrode 13 may include aluminum or other conductive metals in various embodiments. The thicknesses of the various layers of material may also vary depending upon the particular application.
  • FIG. 1B illustrates the device 10 after one or more etching processes were performed using the source/drain regions 20 as an etch stop to form an opening or trench 24 in the layer of insulating material 22. As shown, a portion of the sidewall spacer material 17 may be removed due to the etching process. A portion of the gate cap layer 15 may also be removed depending upon the accuracy of the alignment of the contact opening 24. The etching process exposes the source/drain region 20 for further processing. The source/drain region 20 includes an upper surface 20U having a lateral width 23. Using prior art techniques, when the opening 24 is filled with a contact structure, the lateral width 23 of the source/drain region 20 corresponds to the contact length of the contact structure.
  • FIG. 1C illustrates the device 10 after an extended-height epi contact structure 26 was formed in the contact opening 24. The extended-height epi contact structure 26 may be formed by performing one or more epi growth processes and thereafter performing a chemical mechanical polish (“CMP”) process to remove excess epi material positioned outside of the contact opening 24. In at least one embodiment, the extended-height epi contact structure 26 is made of an epi material that is substantially the same as the material of the epi material formed for the raised source/drain region 20. For example, both materials may be silicon, both materials may be silicon germanium, etc. In other embodiments, the extended-height epi contact structure 26 may be made of an epi material that is different from the epi material (if any) in the source/drain region 20 or the substrate 12. The extended-height epi contact structure 26 may be formed to any desired height above the source/drain region 20, and the extended-height epi contact structure 26 may be heavily doped to ensure low resistance. In the depicted example, the upper surface 26U of the extended-height epi contact structure 26 is at a level that is above the upper surface 15U of the gate cap layer 15. In one example, the difference in height levels between the surfaces may be about 30-100 nm, but the height difference may vary depending upon the application.
  • FIG. 1D illustrates the device 10 after one or more recess etching processes were performed on the insulating layer 22 to reduce its thickness or height as shown in the figure. As such, a portion of the extended-height epi contact structure 26 is exposed for further processing. The amount of recessing of the layer of insulating material 22, and thus the amount of the extended-height epi contact structure 26 exposed above the surface of the recessed layer of insulating material 22, may vary depending upon the application.
  • FIG. 1E illustrates the device 10 after one or more timed etching processes were performed to trim the exposed portion of the extended-height epi contact structure 26. As shown, the portion of extended-height epi contact structure 26 above the insulating layer 22 has been narrowed in lateral width and shortened in vertical height. Also, the base of the exposed portion of the extended-height epi contact structure 26 has been recessed such that its recessed surface 26R is below the upper surface 22U of the insulating material 22, as shown. The amount of trimming of the exposed portion of the extended-height epi contact structure 26 may vary depending upon the application.
  • FIG. 1F illustrates the device 10 after a metal silicide region 28 was formed on the exposed and trimmed portion of the extended-height epi contact structure 26. The metal silicide region 28 depicted herein may be formed using a variety of different refractory metals, e.g., nickel, platinum, cobalt, etc., or combinations thereof, it may be formed to any desired thickness, and it may be formed using metal silicide formation techniques that are well known to those skilled in the art. The typical steps performed to form metal silicide regions are: (1) depositing a layer of refractory metal; (2) performing an initial heating process causing the refractory metal to react with underlying material; (3) performing an etching process to remove unreacted portions of the layer of refractory metal; and (4) performing an additional heating process to form the final phase of the metal silicide. In another embodiment, the metal silicide may also be formed by depositing a thin liner of metal, such as Ti or NiPt, depositing a TiN barrier on the liner and depositing a low-resistance conducting metal, such as W, on the barrier. The silicide is formed between the liner and conducting metal during the thermal process that occurs when the conducting metal is deposited. As such, no additional strip process is needed. In the illustrative example depicted herein, the metal silicide region 28 may be formed by initially performing a highly-conformal atomic layer deposition (ALD) process or an RF physical vapor deposition (PVD) process to deposit a layer of, for example, nickel, having a thickness of, for example, 1-5 nm. Thereafter, the anneal-etch-anneal process sequence described above is performed to complete the formation of the metal silicide region 28.
  • For the novel contact structure depicted herein, the contact length is the sum of the substantially vertical heights (along the side portions) 35, 31 and lateral width (along the upper surface) 29 of the previously exposed portions of the extended-height epi contact structure 26. This contact length is greater than the lateral width 23 of the source/drain region 20, and as such, the contact area is greater than that of prior art contact structures. Increasing the contact area leads to a desirable decrease in contact resistance that improves the performance of the device 10.
  • FIG. 1G illustrates the device 10 after one or more deposition processes were performed so as to deposit a conductive layer 30 on the device 10. In at least one embodiment, the conductive layer 30 includes tungsten.
  • FIG. 1H illustrates the device 10 after the conductive layer 30 was patterned using known photolithography techniques so as to form a contact 30B on the metal silicide region 28. The shape of the contact 30B may vary depending upon the application and patterning technique used in various embodiments. The contact 30B is conductively coupled to the source/drain region 20 of the device 10. As shown, small portions 33 of the metal silicide region 28 are horizontally adjacent to the layer of insulating material 22 and not covered by the contact 30B.
  • FIG. 1I illustrates the device 10 after another layer of insulating material 32 was deposited on the device 10, including on the contact 30B and the layer of insulating material 22. The layer of insulating material 32 may be comprised of the same or a different insulating material as that used for the layer of insulating material 22. One or more CMP processes were performed to remove any excess insulating material above the contact 30B.
  • FIGS. 2A-2H depict another illustrative method of forming contacts for semiconductor devices and the resulting devices, wherein like reference numbers will be used to indicate previously described structures. FIG. 2A depicts a device 100 at a point of fabrication that corresponds to that shown in FIG. 1B, i.e., after the formation of the source/drain regions 20, the layer of insulating material 22, the above-described gate structure 14, and the above-described contact opening 24 in the layer of insulating material 22. Also depicted are the above-described gate cap layer 15 and sidewall spacer material 17.
  • FIG. 2B illustrates the device 100 after one or more growth processes were performed to form a first portion of another embodiment of an extended-height epi contact structure 26A. Specifically, one or more epi growth processes were performed to grow a layer of epi semiconductor material on the source/drain region 20 of the device 100 to form the first portion of the extended-height epi contact structure 26A (first portion) within the contact opening 24. As shown, the first portion 26A is formed such that its upper surface 26X is positioned above the upper surface 15U of the gate cap layer 15. As before, the difference in height level between the upper surface 15U of the gate cap layer 15 and the upper surface 26X of the first portion 26A may vary depending upon the particular application. In one embodiment, the height difference may be about 30-70 nm. Relative to the extended-height epi contact structure 26 discussed previously, the first portion 26A shown in FIG. 2B is shorter.
  • FIG. 2C illustrates the device 10 after a sidewall spacer 27 was formed in the contact opening 24 above the first portion 26A. The spacer 27 may be formed by depositing a layer of spacer material, such as silicon nitride, and thereafter performing an anisotropic etching process to define the spacer 27.
  • FIG. 2D illustrates the device 100 after a second portion of the extended-height epi contact structure 26B (second portion) was grown on the first portion 26A adjacent to, and in between, the spacer 27. In at least one embodiment, the portions 26A, 26B may be made of the same epi semiconductor material. In another embodiment, the portions 26A, 26B may be made of different epi semiconductor materials.
  • FIG. 2E illustrates the device 100 after one or more etching processes were performed to remove the spacer 27 selectively relative to the surrounding materials. This process operation results in the formation of trenches or spacer cavities 29.
  • FIG. 2F illustrates the device 100 after one or more timed etching processes were performed to trim the exposed portions of the second portion 26B and to recess the exposed portions of the first portion 26A. As such, the second portion 26B has been narrowed in lateral width and shortened in vertical height. The amount of trimming of the second portion 26B and recessing of the first portion 26A may vary depending upon the application.
  • FIG. 2G illustrates the device 100 after a metal silicide region 28 was formed on the first and second portions 26A, 26B within the contact opening 24. The metal silicide region 28 may be formed of any metal silicide and may be formed to any desired thickness as described previously. The contact length of the overall contact structure is the sum of the substantially vertical heights 200, 202 and lateral width 204 of the second portion 26B, as well as the lateral widths 206, 208 of the first portion 26A. This contact length is greater than the lateral width 23 of the source/drain region 20, and, as such, the contact area is greater than that of prior art contact structures. Increasing the contact area leads to a desirable decrease in contact resistance that improves the performance of the device 100.
  • FIG. 2H illustrates the device 100 after one or more deposition processes and CMP processes were performed to form a conductive contact 300 in the contact opening 24. In at least one embodiment, the conductive contact 300 includes tungsten. The contact 300 is conductively coupled to the source/drain region 20 through the first and second portions of the extended-height epi contact structure 26B, 26A.
  • The particular embodiments disclosed above are illustrative only, as the invention may be modified and practiced in different but equivalent manners apparent to those skilled in the art having the benefit of the teachings herein. For example, the process steps set forth above may be performed in a different order. Furthermore, no limitations are intended to the details of construction or design herein shown, other than as described in the claims below. It is therefore evident that the particular embodiments disclosed above may be altered or modified and all such variations are considered within the scope and spirit of the invention. Note that the use of terms, such as “first,” “second,” “third” or “fourth” to describe various processes or structures in this specification and in the attached claims is only used as a shorthand reference to such steps/structures and does not necessarily imply that such steps/structures are performed/formed in that ordered sequence. Of course, depending upon the exact claim language, an ordered sequence of such processes may or may not be required. Accordingly, the protection sought herein is as set forth in the claims below.

Claims (20)

What is claimed:
1. A device, comprising:
a first epi semiconductor material positioned in a source/drain region of said device, said first epi semiconductor material having a first lateral width at an upper surface thereof;
an extended-height epi contact structure positioned on said first epi semiconductor material, said extended-height epi contact structure having an upper surface and first and second side surfaces, wherein said upper surface and said first and second side surfaces collectively define a contact length of said extended-height epi contact structure that is greater than said first lateral width; and
a metal silicide region positioned on said upper surface and said first and second side surfaces of said extended-height epi contact structure.
2. The device of claim 1, wherein a portion of said metal silicide region is positioned horizontally adjacent to a layer of insulating material.
3. The device of claim 1, wherein said first epi semiconductor material and said extended-height epi contact structure comprise a substantially same semiconductor material.
4. The device of claim 1, wherein said first epi semiconductor material and said extended-height epi contact structure are different semiconductor materials.
5. The device of claim 1, further comprising a conductive contact structure conductively coupled to said metal silicide region.
6. The device of claim 1, further comprising at least one gate structure positioned laterally adjacent to at least a portion of said extended height epi contact structure and at least a portion of said first epi semiconductor material.
7. The device of claim 6, wherein said at least one gate structure comprises a high-k/metal gate configuration.
8. The device of claim 1, wherein at least a portion of said extended height epi contact structure and at least a portion of said first epi semiconductor material are positioned between and laterally adjacent to a first gate structure and a second gate structure.
9. The device of claim 8, wherein at least one of said extended height epi contact structure and said first epi semiconductor material contact a sidewall spacer positioned adjacent to one of said first gate structure and said second gate structure.
10. A device, comprising:
a first epi semiconductor material positioned in a source/drain region of said device, said first epi semiconductor material having a first lateral width at a first upper surface thereof;
an extended-height epi contact structure positioned above said first epi semiconductor material, said extended-height epi contact structure comprising:
a first contact structure portion positioned on said first upper surface of said first epi semiconductor material, said first contact structure portion having a second lateral width at a second upper surface thereof that is greater than said first lateral width; and
a second contact structure portion positioned on said second upper surface of said first contact structure portion, said second contact structure portion having a third lateral width at a third upper surface thereof that is less than said second lateral width; and
a metal silicide region positioned on at least first and second side surfaces and said third upper surface of said second contact structure portion.
11. The device of claim 10, wherein said first and second side surfaces and said third upper surface of said second contact structure portion collectively define a contact length of said extended-height epi contact structure that is greater than said first lateral width of said first upper surface of said first epi semiconductor material.
12. The device of claim 10, wherein said second contact structure portion covers a first surface portion of said second upper surface of said first contact structure portion but does not cover a second surface portion of said second upper surface of said first contact structure portion.
13. The device of claim 10, wherein said second surface portion of said first contact structure portion, said first and second side surfaces of said second contact structure portion, and said third upper surface of said second contact structure portion collectively define a contact length of said extended-height epi contact structure that is greater than said first lateral width of said first upper surface of said first epi semiconductor material.
14. The device of claim 10, wherein a layer of insulating material is positioned horizontally adjacent to and laterally surrounds a portion of said metal silicide region.
15. The device of claim 10, wherein said first contact structure portion and said second contact structure portion comprise a substantially same semiconductor material.
16. The device of claim 10, wherein said first contact structure portion and said second contact structure portion are different semiconductor materials.
17. The device of claim 10, wherein a gate structure of said device comprises a high-k/metal gate configuration.
18. The device of claim 10, further comprising a conductive contact structure conductively coupled to said metal silicide region.
19. A device, comprising:
a first epi semiconductor material positioned in a source/drain region of said device, said first epi semiconductor material having a first lateral width at a first upper surface thereof;
an extended-height epi contact structure positioned on said first epi semiconductor material, said extended-height epi contact structure comprising:
a first contact structure portion positioned on said first upper surface of said first epi semiconductor material; and
a second contact structure portion positioned on a second upper surface of said first contact structure portion, said second contact structure portion covering a first surface portion of said second upper surface but not a second surface portion of said second upper surface, wherein said second surface portion of said first contact structure portion, first and second side surfaces of said second contact structure portion, and a third upper surface of said second contact structure portion collectively define a contact length of said extended-height epi contact structure that is greater than said first lateral width of said first upper surface of said first epi semiconductor material; and
a metal silicide region positioned on said second surface portion of said first contact structure portion and said first and second side surfaces and said third upper surface of said second contact structure portion.
20. The device of claim 19, further comprising a conductive contact structure conductively coupled to said metal silicide region.
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